WO2017206213A1 - Dispositif oled et écran oled - Google Patents

Dispositif oled et écran oled Download PDF

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Publication number
WO2017206213A1
WO2017206213A1 PCT/CN2016/086713 CN2016086713W WO2017206213A1 WO 2017206213 A1 WO2017206213 A1 WO 2017206213A1 CN 2016086713 W CN2016086713 W CN 2016086713W WO 2017206213 A1 WO2017206213 A1 WO 2017206213A1
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layer
thickness
alloy
electron
tantalum alloy
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PCT/CN2016/086713
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Chinese (zh)
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李先杰
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深圳市华星光电技术有限公司
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H10K59/876—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
    • H10K50/13—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit
    • H10K50/131—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit with spacer layers between the electroluminescent layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2101/00—Properties of the organic materials covered by group H10K85/00
    • H10K2101/10—Triplet emission
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes
    • H10K59/80517—Multilayers, e.g. transparent multilayers

Definitions

  • the present invention relates to the field of display technologies, and in particular, to an OLED device and an OLED display.
  • An OLED (Organic Light-Emitting Diode) display also known as an organic electroluminescent display, is an emerging flat panel display device because of its simple preparation process, low cost, low power consumption, and high luminance.
  • the working temperature has wide adaptability, light volume, fast response, easy to realize color display and large screen display, easy to realize integration with integrated circuit driver, easy to realize flexible display, and the like, and thus has broad application prospects.
  • OLED can be divided into two types: passive matrix OLED (PMOLED) and active matrix OLED (AMOLED), namely direct addressing and thin film transistor matrix addressing.
  • PMOLED passive matrix OLED
  • AMOLED active matrix OLED
  • the AMOLED has pixels arranged in an array, belongs to an active display type, has high luminous efficiency, and is generally used as a high-definition large-sized display device.
  • the large-size AMOLED display mass production technology adopts a white organic light-emitting diode (WOLED) plus a color filter (CF), and the principle is that the white light emitted by the WOLED passes through the color filter. After filtering out the red, green and blue primary colors.
  • WOLED white organic light-emitting diode
  • CF color filter
  • FIG. 1 is a schematic structural view of a conventional ordinary blue OLED device, which includes the bottom-up order.
  • the transmission layer 600 constitutes a blue light emitting unit. Since the blue OLED device has only one blue light emitting unit, the light emitting intensity is low, so that the display effect of the OLED display is poor.
  • the object of the present invention is to provide an OLED display comprising the above OLED device, which can improve the luminous intensity, facilitate the excitation of the color conversion film to emit red and green light, obtain high color saturation of red, green and blue primary color lights, and improve the OLED display.
  • the color gamut while helping to improve the resolution of OLED displays.
  • the present invention first provides an OLED device including an anode, a hole injection layer, a hole transport layer, a first light emitting unit, a charge generating layer, a second light emitting unit, and a cathode which are disposed in this order from bottom to top.
  • the anode is a translucent electrode;
  • the first light emitting unit includes a first electron blocking layer, a first light emitting layer, and a first electron transport layer disposed in order from bottom to top
  • the second light emitting unit includes a second electronic block disposed in order from bottom to top a layer, a second luminescent layer, and a second electron transport layer;
  • the charge generation layer includes an electron generation layer and a hole generation layer which are disposed in this order from bottom to top.
  • the first luminescent layer and the second luminescent layer are both blue luminescent layers, and the material of the blue luminescent layer comprises 4,4′-bis(2,2)-distyryl-1,1 biphenyl;
  • the thickness of the first light-emitting layer is 5 nm to 40 nm; and the thickness of the second light-emitting layer is 5 nm to 40 nm.
  • the anode includes two transparent conductive metal oxide layers and a metal layer between the two transparent conductive metal oxide layers; the transparent conductive metal oxide layer has a thickness of 5 nm to 50 nm; and the metal layer has a thickness of 5 nm. ⁇ 25nm;
  • the cathode is a reflective electrode, and the material of the cathode includes lithium, a lithium alloy, a magnesium alloy, a calcium alloy, a calcium alloy, a tantalum alloy, a tantalum alloy, a tantalum alloy, a tantalum alloy, a tantalum alloy, a tantalum alloy, a tantalum alloy, a tantalum alloy, a tantalum alloy, a tantalum alloy, a tantalum alloy, a tantalum alloy, a combination of one or more of niobium alloy, aluminum, aluminum alloy, niobium, tantalum alloy, niobium, and niobium alloy; the cathode has a thickness of 50 nm to 1000 nm.
  • the material of the electron generating layer includes hexaonitrile hexaazatriphenylene; the material of the hole generating layer includes N,N'-diphenyl-N,N'-(1-naphthyl)-1,1 '-biphenyl-4,4'-diamine; the electron-generating layer has a film thickness of 5 nm to 50 nm; and the hole-generating layer has a film thickness of 5 nm to 50 nm.
  • the material of the hole injection layer includes hexaonitrile hexaazatriphenylene; the hole injection layer has a thickness of 5 nm to 500 nm;
  • the material of the hole transport layer comprises N,N'-diphenyl-N,N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamine;
  • the thickness of the transport layer is 5 nm to 500 nm;
  • the materials of the first electron blocking layer and the second electron blocking layer each comprise 4,4',4"-tris(carbazol-9-yl)triphenylamine; the first electron blocking layer and the second electron blocking layer The thickness is 5nm ⁇ 30nm;
  • the first electron transport layer comprises two structural layers arranged in an overlapping manner, wherein the material of one structural layer comprises 4,7-diphenyl-1,10-phenanthroline, and the material of the other structural layer comprises 4,7-two Phenyl-1,10-phenanthrenequinone a mixture of a porphyrin and lithium; the first electron transport layer has a thickness of 5 nm to 50 nm;
  • the material of the second electron transport layer includes 4,7-diphenyl-1,10-phenanthroline; the thickness of the second electron transport layer is 5 nm to 50 nm.
  • the present invention also provides an OLED display, comprising a TFT substrate, a color conversion film disposed on the TFT substrate, a flat layer disposed on the color conversion film, and an OLED device disposed on the planar layer. a package cover plate over the OLED device, and a package adhesive material disposed between the package cover plate and the OLED device;
  • the OLED device includes an anode, a hole injection layer, a hole transport layer, a first light emitting unit, a charge generating layer, a second light emitting unit, and a cathode disposed in order from bottom to top; the anode is a translucent electrode;
  • the first light emitting unit includes a first electron blocking layer, a first light emitting layer, and a first electron transport layer disposed in order from bottom to top
  • the second light emitting unit includes a second electronic block disposed in order from bottom to top a layer, a second luminescent layer, and a second electron transport layer
  • the first luminescent layer and the second luminescent layer are both blue luminescent layers
  • the charge generating layer includes an electron generating layer and a hole disposed in order from bottom to top Generating layer
  • the color conversion film includes a red pixel unit, a green pixel unit, and a blue pixel unit, the red pixel unit is a red conversion film, the green pixel unit is a green conversion film, and the blue pixel unit is colorless and transparent. Film or through hole;
  • the OLED device After applying a voltage, the OLED device emits blue light, and the blue light enters the color conversion film through the anode of the OLED device, exciting the red conversion film constituting the red pixel unit to emit red light, and exciting the green color constituting the green pixel unit.
  • the conversion film emits green light, and passes through a colorless transparent film or a through hole constituting the blue pixel unit to emit blue light, thereby realizing display of three primary colors of red, green and blue.
  • the material of the blue light emitting layer comprises 4,4′-bis(2,2)-distyryl-1,1 biphenyl; the first light emitting layer has a thickness of 5 nm to 40 nm; and the second light emitting layer The thickness is 5 nm to 40 nm.
  • the anode includes two transparent conductive metal oxide layers and a metal layer between the two transparent conductive metal oxide layers; the transparent conductive metal oxide layer has a thickness of 5 nm to 50 nm; and the metal layer has a thickness of 5 nm. ⁇ 25nm;
  • the cathode is a reflective electrode, and the material of the cathode includes lithium, a lithium alloy, a magnesium alloy, a calcium alloy, a calcium alloy, a tantalum alloy, a tantalum alloy, a tantalum alloy, a tantalum alloy, a tantalum alloy, a tantalum alloy, a tantalum alloy, a tantalum alloy, a tantalum alloy, a tantalum alloy, a tantalum alloy, a tantalum alloy, a combination of one or more of niobium alloy, aluminum, aluminum alloy, niobium, tantalum alloy, niobium, and niobium alloy; the cathode has a thickness of 50 nm to 1000 nm.
  • the material of the electron generating layer includes hexaonitrile hexaazatriphenylene; the material of the hole generating layer includes N,N'-diphenyl-N,N'-(1-naphthyl)-1,1 '-biphenyl-4,4'-diamine; film of the electron generating layer
  • the thickness is 5 nm to 50 nm; and the thickness of the hole generating layer is 5 nm to 50 nm.
  • the material of the hole injection layer includes hexaonitrile hexaazatriphenylene; the hole injection layer has a thickness of 5 nm to 500 nm;
  • the material of the hole transport layer comprises N,N'-diphenyl-N,N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamine;
  • the thickness of the transport layer is 5 nm to 500 nm;
  • the materials of the first electron blocking layer and the second electron blocking layer each comprise 4,4',4"-tris(carbazol-9-yl)triphenylamine; the first electron blocking layer and the second electron blocking layer The thickness is 5nm ⁇ 30nm;
  • the first electron transport layer comprises two structural layers arranged in an overlapping manner, wherein the material of one structural layer comprises 4,7-diphenyl-1,10-phenanthroline, and the material of the other structural layer comprises 4,7-two a mixture of phenyl-1,10-phenanthroline and lithium; the first electron transport layer has a thickness of 5 nm to 50 nm;
  • the material of the second electron transport layer comprises 4,7-diphenyl-1,10-phenanthroline; the thickness of the second electron transport layer is 5 nm to 50 nm;
  • the material of the red conversion film includes a red quantum dot
  • the material of the green conversion film includes a green quantum dot
  • the red conversion film has a thickness of 10 nm to 200 nm
  • the green conversion film has a thickness of 10 nm to 200 nm.
  • the present invention also provides an OLED device comprising an anode, a hole injection layer, a hole transport layer, a first light emitting unit, a charge generating layer, a second light emitting unit, and a cathode disposed in order from bottom to top; Translucent electrode;
  • the first light emitting unit includes a first electron blocking layer, a first light emitting layer, and a first electron transport layer disposed in order from bottom to top
  • the second light emitting unit includes a second electronic block disposed in order from bottom to top a layer, a second luminescent layer, and a second electron transport layer
  • the charge generating layer includes an electron generating layer and a hole generating layer disposed in order from bottom to top
  • the first luminescent layer and the second luminescent layer are both blue luminescent layers, and the material of the blue luminescent layer comprises 4,4′-bis(2,2)-distyryl-1,1 biphenyl;
  • the thickness of the first luminescent layer is 5 nm to 40 nm; the thickness of the second luminescent layer is 5 nm to 40 nm;
  • the anode comprises two transparent conductive metal oxide layers and a metal layer between the two transparent conductive metal oxide layers;
  • the transparent conductive metal oxide layer has a thickness of 5 nm to 50 nm; the thickness of the metal layer 5 nm to 25 nm;
  • the cathode is a reflective electrode, and the material of the cathode includes lithium, a lithium alloy, a magnesium alloy, a calcium alloy, a calcium alloy, a tantalum alloy, a tantalum alloy, a tantalum alloy, a tantalum alloy, a tantalum alloy, a tantalum alloy, a tantalum alloy, a tantalum alloy, a tantalum alloy, a tantalum alloy, a tantalum alloy, a tantalum alloy, a combination of one or more of niobium alloy, aluminum, aluminum alloy, niobium, tantalum alloy, niobium, and niobium alloy; the cathode has a thickness of 50 nm to 1000 nm.
  • the present invention provides an OLED device by using two or More illuminating units are connected in series, which can multiply the illuminating intensity of the OLED device; at the same time, by using a translucent anode, a microcavity effect can be introduced, the luminescence spectrum is narrowed, the light color is more pure, and the luminescence intensity is further improved.
  • An OLED display provided by the present invention comprises the above OLED device, which increases the luminescence intensity by connecting two or more illuminating units in series; and by using a translucent anode, a microcavity effect can be introduced to change the luminescence spectrum.
  • Narrow light color is more pure and further enhances the luminous intensity, which is beneficial to stimulate the color conversion film to emit red and green light, obtain red, green and blue primary color light with high color saturation, and improve the color gamut of the OLED display;
  • the green and blue pixel light-emitting layers are all blue light-emitting layers, thereby avoiding the use of a precision metal mask, which is advantageous for improving the resolution of the OLED display.
  • FIG. 1 is a schematic structural view of a conventional conventional blue OLED device
  • FIG. 2 is a schematic structural view of an OLED device of the present invention
  • 3 is a schematic view showing the comparison of the luminous intensity of the high-brightness blue OLED device of the present invention and the conventional ordinary blue OLED device;
  • FIG. 4 is a schematic structural view of an OLED display of the present invention.
  • FIG. 5 is a spectrum diagram of red, green and blue primary colors emitted by the OLED display of the present invention.
  • the present invention firstly provides an OLED device 120 including an anode 10, a hole injection layer 20, a hole transport layer 30, a first light emitting unit 40, a charge generating layer 50, and a second layer disposed in order from bottom to top. a second light emitting unit 60, and a cathode 70; the anode 10 is a translucent electrode;
  • the first light emitting unit 40 includes a first electron blocking layer 41, a first light emitting layer 42, and a first electron transporting layer 43 disposed in order from bottom to top; and the second light emitting unit 60 includes sequentially arranged from bottom to top.
  • the charge generating layer 50 includes an electron generating layer 51 and a hole generating layer 52 which are disposed in this order from bottom to top.
  • the charge generating layer 50 is configured to supply the first light emitting unit 40 and the second light emitting unit 60 with electrons or holes required for their light emission, respectively, such that the first light emitting unit 40 is at the charge generating layer 50 and the anode 10
  • the light is emitted, and the second light emitting unit 60 emits light under the action of the charge generating layer 50 and the cathode 70. That is, the charge generating layer 50 connects the first light emitting unit 40 and the second light emitting unit 60 in series between the anode 10 and the cathode 70, thereby realizing the structure of the tandem organic light emitting diode, and the luminous efficiency can be increased.
  • the anode 10 is used to inject holes into the hole injection layer 20.
  • the anode 10 includes two transparent conductive metal oxide layers and a metal layer between the two transparent conductive metal oxide layers.
  • the material of the transparent conductive metal oxide layer is preferably indium tin oxide; the material of the metal layer may be silver or aluminum.
  • the transparent conductive metal oxide layer has a thickness of 5 nm to 50 nm, and the metal layer has a thickness of 5 nm to 25 nm.
  • the transparent conductive metal oxide layer has a thickness of 15 nm, and the metal layer has a thickness of 15 nm.
  • the hole injection layer 20 is for injecting holes from the anode 10 into the hole transport layer 30.
  • the material of the hole injection layer 20 includes Hexanitrile hexaazatriphenylene (HATCN), and the structural formula of the hexaonitrile hexaazatriphenylene is
  • the hole injection layer 20 has a thickness of 5 nm to 500 nm, preferably 10 nm.
  • the hole transport layer 30 is used to transport holes into the first electron blocking layer 41 of the first light emitting unit 40.
  • the material of the hole transport layer 30 comprises N,N'-diphenyl-N,N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamine ( N,N'-bis(naphthalen-1-yl)-N,N'-bis(phenyl)benzidine, NPB), the N,N'-diphenyl-N,N'-(1-naphthyl) -1,1'-biphenyl-4,4'-diamine has the structural formula
  • the hole transport layer 30 has a thickness of 5 nm to 500 nm, preferably 60 nm.
  • the first electron blocking layer 41 and the second electron blocking layer 61 are respectively used for electricity Sub-portions are confined in the first luminescent layer 42 and the second luminescent layer 62, and holes are transported into the first luminescent layer 42 and the second luminescent layer 62.
  • the materials of the first electron blocking layer 41 and the second electron blocking layer 61 each include 4,4′,4′′-tris(carbazol-9-yl)triphenylamine (4,4′,4′′- Tris(N-carbazolyl)triphenylamine, TCTA), the structural formula of the 4,4',4"-tris(carbazol-9-yl)triphenylamine is
  • the first electron blocking layer 41 has a thickness of 5 nm to 30 nm, preferably 10 nm; and the second electron blocking layer 61 has a thickness of 5 nm to 30 nm, preferably 10 nm.
  • the first luminescent layer 42 and the second luminescent layer 62 are used to compositely emit holes and electrons in the luminescent layer.
  • the first luminescent layer 42 and the second luminescent layer 62 are both blue luminescent layers, and the material of the blue luminescent layer comprises 4,4′-bis(2,2)-distyryl-1,1 Biphenyl (4,4'-Bis(2,2-diphenylvinyl)-1,10-biphenyl, DPVBi), the 4,4'-bis(2,2)-distyryl-1,1 biphenyl
  • the material of the blue luminescent layer comprises 4,4′-bis(2,2)-distyryl-1,1 Biphenyl (4,4'-Bis(2,2-diphenylvinyl)-1,10-biphenyl, DPVBi), the 4,4'-bis(2,2)-distyryl-1,1 biphenyl
  • the first light-emitting layer 42 has a thickness of 5 nm to 40 nm, preferably 25 nm; and the second light-emitting layer 62 has a thickness of 5 nm to 40 nm, preferably 25 nm.
  • the first electron transport layer 43 is for transferring electrons injected from the charge generating layer 50 into the first light emitting layer 42
  • the second electron transport layer 63 is for transferring electrons injected from the cathode 70 to In the second luminescent layer 62.
  • the first electron transport layer 43 has a thickness of 5 nm to 50 nm, preferably 20 nm.
  • the first electron transport layer 43 comprises two structural layers arranged in an overlapping manner, wherein the material of a structural layer comprises 4,7-diphenyl-1,10-phenanthroline (4,7-diphenyl-1, 10-phenanthroline, Bphen), the material of another structural layer comprises a mixture of 4,7-diphenyl-1,10-phenanthroline (Bphen) and lithium (Li), both of which have a thickness of preferably 10 nm. .
  • the structural formula of the 4,7-diphenyl-1,10-phenanthroline is
  • the second electron transport layer 63 has a thickness of 5 nm to 50 nm, preferably 20 nm.
  • the material of the second electron transport layer 63 includes 4,7-diphenyl-1,10-phenanthroline (Bphen).
  • the electron generating layer 51 is for generating electrons and injecting electrons into the first electron transport layer 43 of the first light emitting unit 40
  • the hole generating layer 52 for generating holes and holes It is injected into the second electron blocking layer 61 of the second light emitting unit 60.
  • the material of the electron generating layer 51 includes hexaonitrile hexaazatriphenylene (HATCN); the material of the hole generating layer 52 includes N,N'-diphenyl-N,N'-(1 -Naphthyl)-1,1'-biphenyl-4,4'-diamine (NPB).
  • HTCN hexaonitrile hexaazatriphenylene
  • NPB N,N'-diphenyl-N,N'-(1 -Naphthyl)-1,1'-biphenyl-4,4'-diamine
  • the film thickness of the electron generating layer 51 is 5 nm to 50 nm, and the film thickness of the hole generating layer 52 is 5 nm to 50 nm.
  • the film thickness of the electron generating layer 51 is 10 nm.
  • the film thickness of the hole generating layer 52 was 10 nm.
  • the cathode 70 is used to inject electrons into the second electron transport layer 63.
  • the cathode 70 is a reflective electrode.
  • the material of the cathode 70 is usually a low work function metal material, such as lithium (Li), lithium alloy, magnesium (Mg), magnesium alloy, calcium (Ca), calcium alloy, strontium (Sr), bismuth alloy. , lanthanum (La), lanthanum alloy, cerium (Ce), cerium alloy, lanthanum (Eu), yttrium alloy, yttrium (Yb), yttrium alloy, aluminum (Al), aluminum alloy, lanthanum (Cs), yttrium alloy, yttrium A combination of one or more of (Rb), and bismuth alloy.
  • the cathode 70 has a thickness of 50 nm to 1000 nm.
  • the cathode 70 is a composite film composed of a 1 nm lithium fluoride (LiF) layer and a 100 nm aluminum layer.
  • LiF lithium fluoride
  • the cathode 70 is formed into a film by a vacuum evaporation method.
  • the OLED device of the present invention has a higher luminous intensity relative to the ordinary blue OLED device having only a single light emitting unit of FIG. 1, when the first light emitting layer 42
  • the OLED device of the present invention constitutes a high-brightness blue OLED device, and the high-brightness blue OLED device of the present invention and the ordinary blue OLED shown in FIG. 1 are formed at the same current density.
  • the illuminance of the device is compared, and the obtained result is shown in FIG. 3.
  • the illuminating intensity of the high-brightness blue OLED device of the present invention is four times higher than that of the conventional blue OLED device. about.
  • the luminescence intensity of the OLED device can be multiplied by connecting two or more illuminating units in series; in addition, by using a translucent anode, a microcavity effect can be introduced to narrow the luminescence spectrum, and the light color is more Pure and further increase the luminous intensity, which is beneficial to improve the display effect of the OLED display.
  • the present invention further provides an OLED display, comprising a TFT substrate 110, a color conversion film 140 disposed on the TFT substrate 110, a flat layer 160 disposed on the color conversion film 140, An OLED device 120 disposed on the flat layer 160, a package cover 130 disposed above the OLED device 120, and a package adhesive 150 disposed between the package cover 130 and the OLED device 120;
  • the OLED device 120 includes an anode 10, a hole injection layer 20, a hole transport layer 30, a first light emitting unit 40, a charge generating layer 50, and a second light emitting unit 60 which are disposed in this order from bottom to top. And a cathode 70; the anode 10 is a translucent electrode;
  • the first light emitting unit 40 includes a first electron blocking layer 41, a first light emitting layer 42, and a first electron transport layer 43 disposed in order from bottom to top, and the second light emitting unit 60 includes sequentially arranged from bottom to top.
  • the first luminescent layer 42 and the second luminescent layer 62 are both blue luminescent layers;
  • the charge generating layer 50 includes Up to the electron generating layer 51 and the hole generating layer 52 arranged in order;
  • the color conversion film 140 includes a red pixel unit 141, a green pixel unit 142, and a blue pixel unit 143.
  • the red pixel unit 141 is a red conversion film
  • the green pixel unit 142 is a green conversion film.
  • the pixel unit 143 is a colorless transparent film or a through hole;
  • the OLED device 120 After the voltage is applied, the OLED device 120 emits blue light, and the blue light enters the color conversion film 140 through the anode 10 of the OLED device 120, and the red conversion film constituting the red pixel unit 141 is excited to emit red light, and the excitation constitutes the
  • the green conversion film of the green pixel unit 142 emits green light, and passes through the colorless transparent film or the through hole constituting the blue pixel unit 143 to emit blue light, thereby realizing display of three primary colors of red, green and blue.
  • the encapsulant 150 is used to bond the encapsulation cover 130 and the OLED device 120 to form a sealing protection for the OLED device 120 to block the erosion of the OLED device 120 by water and oxygen.
  • the material of the flat layer 160 is a transparent organic material.
  • the material of the red conversion film includes red quantum dots
  • the material of the green conversion film includes green quantum dots.
  • the red quantum dot includes a first inner core and a first outer casing, a material of the first inner core is cadmium selenide (CdSe), and a material of the first outer casing is zinc sulfide (ZnS);
  • the green quantum The point includes a second core and a second outer casing, the material of the second inner core is CdSe, and the second outer The material of the shell is ZnS.
  • the red conversion film has a thickness of 10 nm to 200 nm, preferably 30 nm.
  • the green conversion film has a thickness of 10 nm to 200 nm, preferably 30 nm.
  • the hole injection layer 20 has a thickness of 5 nm to 500 nm, preferably 10 nm.
  • the material of the hole injection layer 20 comprises hexonitrile hexaazatriphenylene (HATCN).
  • HTCN hexonitrile hexaazatriphenylene
  • the hole transport layer 30 has a thickness of 5 nm to 500 nm, preferably 60 nm.
  • the material of the hole transport layer 30 comprises N,N'-diphenyl-N,N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamine ( NPB).
  • NPB N,N'-diphenyl-N,N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamine
  • the first electron blocking layer 41 has a thickness of 5 nm to 30 nm, preferably 10 nm; and the second electron blocking layer 61 has a thickness of 5 nm to 30 nm, preferably 10 nm.
  • the materials of the first electron blocking layer 41 and the second electron blocking layer 61 each include 4,4′,4′′-tris(carbazol-9-yl)triphenylamine (TCTA).
  • the first light-emitting layer 42 has a thickness of 5 nm to 40 nm, preferably 25 nm; and the second light-emitting layer 62 has a thickness of 5 nm to 40 nm, preferably 25 nm.
  • the material of the blue light emitting layer comprises 4,4′-bis(2,2)-distyryl-1,1 biphenyl (DPVBi).
  • the first electron transport layer 43 has a thickness of 5 nm to 50 nm, preferably 20 nm.
  • the first electron transport layer 43 includes two structural layers disposed in an overlapping manner, wherein a material of one structural layer includes 4,7-diphenyl-1,10-phenanthroline, and a material of another structural layer includes 4 A mixture of 7-diphenyl-1,10-phenanthroline (Bphen) and lithium (Li), both of which have a thickness of preferably 10 nm.
  • the second electron transport layer 63 has a thickness of 5 nm to 50 nm, preferably 20 nm.
  • the material of the second electron transport layer 63 includes 4,7-diphenyl-1,10-phenanthroline (Bphen).
  • the film thickness of the electron generating layer 51 is 5 nm to 50 nm, and the film thickness of the hole generating layer 52 is 5 nm to 50 nm.
  • the film thickness of the electron generating layer 51 is 10 nm.
  • the film thickness of the hole generating layer 52 was 10 nm.
  • the material of the electron generating layer 51 includes hexaonitrile hexaazatriphenylene (HATCN); the material of the hole generating layer 52 includes N,N'-diphenyl-N,N'-(1 -Naphthyl)-1,1'-biphenyl-4,4'-diamine (NPB).
  • HTCN hexaonitrile hexaazatriphenylene
  • NPB N,N'-diphenyl-N,N'-(1 -Naphthyl)-1,1'-biphenyl-4,4'-diamine
  • the anode 10 includes two transparent conductive metal oxide layers and a metal layer between the two transparent conductive metal oxide layers.
  • the material of the transparent conductive metal oxide layer is preferably indium tin oxide; the material of the metal layer may be silver or aluminum.
  • the transparent conductive metal oxide layer has a thickness of 5 nm to 50 nm, and the metal layer has a thickness of 5 nm to 25 nm.
  • the transparent The thickness of the conductive metal oxide layer was 15 nm, and the thickness of the metal layer was 15 nm.
  • the cathode 70 is a reflective electrode.
  • the material of the cathode 70 is usually a low work function metal material, such as lithium, lithium alloy, magnesium, magnesium alloy, calcium, calcium alloy, tantalum, niobium alloy, niobium, tantalum alloy, niobium, tantalum alloy, niobium.
  • the cathode 70 has a thickness of 50 nm to 1000 nm.
  • the cathode 70 is a composite film composed of a 1 nm lithium fluoride (LiF) layer and a 100 nm aluminum layer.
  • LiF lithium fluoride
  • the cathode 70 is formed into a film by a vacuum evaporation method.
  • the spectrum of the red, green and blue primary colors emitted by the OLED display of the present invention in the color coordinate system, the color coordinates of the red, green and blue primary colors are respectively red light (0.70, 0.30). Green light (0.15, 0.76), blue light (0.12, 0.08), it can be seen that the red, green and blue primary color lights emitted by the OLED display of the present invention all have higher color saturation, and make the OLED display of the present invention
  • the color gamut is as high as 122.6%.
  • the above OLED display wherein the OLED device can multiply the luminescence intensity of the OLED device by connecting two or more illuminating units in series; and by using a translucent anode, a microcavity effect can be introduced to narrow the luminescence spectrum
  • the light color is more pure and the luminous intensity is further improved; thereby, the excitation color conversion film emits red and green light, and the red, green and blue primary color lights with high color saturation are obtained, thereby improving the color gamut of the OLED display.
  • the present invention provides an OLED device and an OLED display.
  • the OLED device of the present invention can multiply the luminescence intensity of the OLED device by connecting two or more illuminating units in series; and by using a translucent anode, a microcavity effect can be introduced to narrow the luminescence spectrum, and the light is narrowed.
  • the color is purer and further increases the luminous intensity.
  • the OLED display of the present invention comprises the above OLED device, which multiplies the luminescence intensity by connecting two or more illuminating units in series; and by using a translucent anode, a microcavity effect can be introduced to narrow the luminescence spectrum, and the light is narrowed.
  • the color is more pure and further enhances the luminous intensity, thereby facilitating the excitation of the color conversion film to emit red and green light, obtaining red, green and blue primary color light of high color saturation, and improving the color gamut of the OLED display; since the OLED display corresponds to red, green,
  • the blue pixel light-emitting layer is a blue light-emitting layer, thereby avoiding the use of a precision metal mask, which is advantageous for improving the resolution of the OLED display.

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

L'invention concerne un dispositif à diodes électroluminescentes organiques (OLED) et un écran OLED. Dans le dispositif OLED (120), au moins deux unités électroluminescentes (40, 60) sont connectées en série pour augmenter l'intensité lumineuse du dispositif OLED (120) ; et une anode semi-transparente (10) est utilisée pour introduire un effet de microcavité, de manière que le spectre de luminescence soit rétréci, que la couleur soit plus pure, et que l'intensité lumineuse soit encore augmentée. L'écran OLED comprend un dispositif OLED (120). Au moins deux unités électroluminescentes (40, 60) sont connectées en série pour augmenter l'intensité lumineuse ; et une anode semi-transparente (10) est utilisée pour introduire un effet de microcavité, de manière que le spectre de luminescence soit rétréci, que la couleur soit plus pure, et que l'intensité lumineuse soit encore augmentée. En fonction de ceci, l'excitation d'un film de conversion de couleur (140) est facilitée de manière à émettre de la lumière rouge et verte et à obtenir de la lumière hautement saturée des trois couleurs primaires, rouge, vert et bleu, élargissant la gamme de couleurs de l'écran OLED. Étant donné que les couches électroluminescentes (42, 62) correspondant à des pixels rouges, verts et bleus dans l'écran OLED sont toutes des couches émettant de la lumière bleue, l'utilisation d'un masque métallique fin n'est pas nécessaire, ce qui permet d'améliorer la résolution de l'écran OLED.
PCT/CN2016/086713 2016-06-02 2016-06-22 Dispositif oled et écran oled WO2017206213A1 (fr)

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