WO2020232911A1 - Dispositif d'affichage électroluminescent - Google Patents

Dispositif d'affichage électroluminescent Download PDF

Info

Publication number
WO2020232911A1
WO2020232911A1 PCT/CN2019/104022 CN2019104022W WO2020232911A1 WO 2020232911 A1 WO2020232911 A1 WO 2020232911A1 CN 2019104022 W CN2019104022 W CN 2019104022W WO 2020232911 A1 WO2020232911 A1 WO 2020232911A1
Authority
WO
WIPO (PCT)
Prior art keywords
light
layer
electrode
display device
emitting
Prior art date
Application number
PCT/CN2019/104022
Other languages
English (en)
Chinese (zh)
Inventor
袁伟
张树仁
Original Assignee
深圳市华星光电半导体显示技术有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 深圳市华星光电半导体显示技术有限公司 filed Critical 深圳市华星光电半导体显示技术有限公司
Publication of WO2020232911A1 publication Critical patent/WO2020232911A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
    • H10K50/13—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays

Definitions

  • the present invention relates to the field of display technology, in particular to an electroluminescent display device capable of emitting white light.
  • OLED Organic light emitting diode
  • LCD liquid crystal display
  • OLED Organic light emitting diode
  • LCD liquid crystal display
  • features such as display, flexible display, and freedom of display form are next-generation display technologies that can replace liquid crystal display technology.
  • OLED display technology does not require the support of backlight, its structure is simpler than that of LCD, and the volume of display products can be lighter and thinner.
  • its working conditions have a series of advantages such as low driving voltage, low energy consumption, and matching with solar cells and integrated circuits. Since OLED is an all-solid-state, non-vacuum device, it has the characteristics of shock resistance and low temperature resistance, so it has a wide range of applications.
  • the purpose of the present invention is to provide an electroluminescent display device that can greatly improve the color gamut performance.
  • Another object of the present invention is to provide a white electroluminescent display device with an inverted structure, which can ensure that the brightness of different positions in the panel can be uniform, and effectively solve the problem of uneven brightness caused by the voltage drop of the panel.
  • the present invention provides an electroluminescent display device, which includes a substrate, a first electrode and a second electrode, respectively facing each other and disposed on the substrate; a first stack is disposed on the first electrode And includes a first light-emitting layer and a first charge blocking layer, wherein the first light-emitting layer is made of quantum dot material; a second stack, which is arranged adjacent to the second electrode, and includes a second light-emitting layer and a first Two charge blocking layers, wherein the second light-emitting layer is made of an organic light-emitting material; and a charge-generating layer is arranged between the first stack and the second stack.
  • the first layer stack further includes an electron injection layer, a first electron transport layer, the first light-emitting layer, and the first charge layer sequentially stacked on the first electrode.
  • a blocking layer and a first hole transport layer, the second stack layer further includes a second electron transport layer, the second light-emitting layer, and the second electron transport layer sequentially stacked between the charge generation layer and the second electrode.
  • the charge generation layer is a hybrid of p-type organic semiconductor and n-type organic semiconductor, wherein the p-type organic semiconductor is close to the first stack, and the n-type organic semiconductor is close to The second stack.
  • the first light-emitting layer includes one or more of red light quantum dots, green light quantum dots, or blue light quantum dots, wherein the light emitted by the second light-emitting layer is identical to the first light emitting layer.
  • the light emitted by the light-emitting layer combines to form white light.
  • the first light emitting layer includes the red light quantum dots and the green light quantum dots for forming composite yellow light
  • the second light emitting layer is made of organic blue light emitting material.
  • the charge generation layer includes a hole generation layer and an electron generation layer.
  • the first electrode is a cathode
  • the second electrode is an anode
  • the quantum dot material of the first light-emitting layer includes organic metal halide perovskite or a quantum dot light-emitting material with a core-shell structure.
  • the organic light-emitting material of the second light-emitting layer includes a fluorescent material, a phosphorescent material, or a thermally excited delayed fluorescent material.
  • the substrate includes a thin film transistor array for controlling pixel circuits.
  • the present invention also provides an electroluminescent display device, including a substrate; a first electrode and a second electrode, respectively facing each other, are provided on the substrate; a first stack is provided on the first electrode, and includes The first light-emitting layer and the first charge blocking layer, wherein the first light-emitting layer is made of quantum dot material; the second stack is arranged adjacent to the second electrode, and includes a second light-emitting layer and a second charge blocking layer , Wherein the second light-emitting layer is made of an organic light-emitting material; and a charge generation layer is provided between the first stack and the second stack; wherein the first stack further includes sequential stacking The electron injection layer, the first electron transport layer, the first light-emitting layer, the first charge blocking layer, and the first hole transport layer on the first electrode, the second stack further includes A second electron transport layer, the second light-emitting layer, the second charge blocking layer, a second hole transport layer, and a hole injection layer stacked between the charge generation layer and the second electrode,
  • the electroluminescent display device of the present invention utilizes an inverted structure having the first light-emitting layer and the second light-emitting layer, wherein the first light-emitting layer is composed of red light quantum dots and green light quantum dots, and the second light-emitting layer
  • the layer is an organic blue light-emitting layer, which combines the light emitted by the first light-emitting layer and the second light-emitting layer to form white light.
  • the red light quantum dots and the green light quantum dots emit light with narrow band gap characteristics and high color saturation.
  • the red light and green light separated by the color filter film of the panel also have the characteristics of narrow band gap and high color saturation, so that the display panel can achieve excellent color gamut performance, effectively solving the shortcomings of traditional WOLED that cannot improve the color gamut performance and uneven brightness. problem.
  • FIG. 1 is a schematic structural diagram of an electroluminescent display device according to a preferred embodiment of the present invention.
  • FIG. 2 is a schematic diagram of another structure of the electroluminescence display device according to a preferred embodiment of the present invention.
  • Figure 3 is an emission spectrum diagram of the electroluminescence display device of the present invention.
  • the present invention is an electroluminescent display device, which can provide high color saturation and excellent color gamut performance through the characteristics of self-luminescence, and the light emission direction of the electroluminescent display device of the present invention can be top-emission light. Can emit light for the bottom.
  • FIG. 1 is a schematic structural diagram of an electroluminescent display device according to a preferred embodiment of the present invention.
  • the electroluminescent display device 100 of the present invention includes a substrate 110, a first electrode 101 and a second electrode 102 arranged facing each other on the substrate 110, a first stack 1, a charge generation layer 3, and a second stack 2 .
  • the substrate 110 is made of glass or a flexible material, and a thin film transistor array (not shown) and the first electrode 110 are formed through an etching process, and the thin film transistor array is used to control pixel circuits.
  • the charge generation layer 3 is provided between the first stack 1 and the second stack 2.
  • the material of the first electrode 101 may be indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO) or silver (Ag), but it is not unlimited.
  • the first electrode 101 serves as a cathode
  • the second electrode 102 serves as an anode.
  • the first stack 1 is disposed on the first electrode 101, and includes an electron injection layer 11, a first electron transport layer 12, and a first light-emitting layer that are sequentially stacked from bottom to top. 10.
  • the electron injection layer 11 and the first electron transport layer 12 are formed on the first electrode 101 through a solution processing process, including but not limited to spin coating.
  • the material of the electron injection layer 11 is metal oxide nanomaterials and organic electron transport materials, such as nano zinc oxide (ZnO), magnesium zinc oxide (ZnMgO), organic material PFN, and the material of the first electron transport layer 12 includes TmPyPB, but not limited to this.
  • the second stack 2 includes a second electron transport layer 24, a second light-emitting layer 20, and a second electron transport layer 24 sequentially stacked between the charge generation layer 3 and the second electrode 102.
  • the charge blocking layer 23, the second hole transport layer 22, and the hole injection layer 21 are sequentially stacked from the bottom to the top starting from the charge generation layer 3.
  • the hole injection layer 21 is used for injecting positive charges (ie, holes) into the second hole transport layer 22 in the energized state, and its material can be but not limited to HATCN.
  • the charge generation layer 3 includes a hole generation layer 31 and an electron generation layer 32.
  • the charge generation layer 3 is a mixture of a hole generation layer 31 of a p-type organic semiconductor (P-CGL) and an electron generation layer 32 of an n-type organic semiconductor (N-CGL), wherein the p-type The organic semiconductor is close to the first stack 1 and the n-type organic semiconductor is close to the second stack 2.
  • the hole generating layer 31 is used to generate holes in a conductive state
  • the electron generating layer 32 is used to generate electrons in a conductive state.
  • first hole transport layer 14 and the second hole transport layer 22 are used to transport hole carriers in the device, and the material can be, for example, BCP, BPhen, TRZ, PBD, TAZ, OXD-7, TPBi, TPyPhPB, TmPyPB, but not limited to this.
  • the functions of the first electron transport layer 12 and the second electron transport layer 24 are to transport the charge carriers of the device, and their materials include but are not limited to organic electron transport materials and metal dopants, such as Bphen or Li.
  • the materials of the first charge blocking layer 13 and the second charge blocking layer 23 may be the same as the first hole transport layer 14 and the second hole transport layer 22.
  • the first charge blocking layer 13 and the second charge blocking layer 23 are used to block charge carriers (that is, electrons or holes) to the first hole transport layer 14 and the second hole transport layer, respectively
  • the movement of 22 affects the light-emitting effects of the first light-emitting layer 10 and the second light-emitting layer 20.
  • the first light-emitting layer 10 includes one or more of red light quantum dots, green light quantum dots or blue light quantum dots, and its material can be organometallic halide perovskite, or have a core-shell structure Quantum dot luminescent material.
  • the first light-emitting layer 10 includes the red light quantum dots and the green light quantum dots, which are used to recombine the carriers in the device to generate excitons, capture, excite and emit red light and Green light forms composite yellow light.
  • the second light-emitting layer 20 is made of organic blue light-emitting materials, which include fluorescent materials, phosphorescent materials or thermally excited delay (TADF) fluorescent materials, such as blue fluorescent materials and derivatives thereof, stilbene aromatic derivatives Compounds, DSA derivatives, etc.; blue phosphorescent materials, metal iridium complexes, etc.
  • TADF thermally excited delay
  • the electrons and holes injected by the first electrode 101 (cathode) and the second electrode 102 (anode) are recombined in the first light-emitting layer 10 and the second light-emitting layer 20 to produce different light colors and Combine to form white light.
  • FIG. 2 is a schematic diagram of another structure of the electroluminescence display device according to a preferred embodiment of the present invention.
  • the second electrode 102 of the electroluminescent display device 100 of the present invention is provided with a cover plate 4, and a sealant frame 5 is provided between the cover plate 4 and the substrate 110 for bonding the cover plate 4 and The substrate 110 seals the electroluminescent display device 100 from the penetration of water vapor and oxygen.
  • FIG 3 is an emission spectrum diagram of the electroluminescence display device of the present invention.
  • the red, green, and blue (RGB) emission spectra are obtained by separating the RGB three primary color spectra through the color filter film. Since the white light of the electroluminescent display device of the present invention is formed by the combination of organic blue light and quantum dots red light and green light, the light emission of red light quantum dots and green light quantum dots has a narrow band gap feature, which is characterized by high color saturation. The red light and green light separated by the filter film also have the characteristics of narrow band gap and high color saturation.
  • the display panel with the electroluminescent display device of the present invention has significantly higher performance in the NTSC color gamut than the traditional white organic light (white organic light).
  • Emitting diode, WOLED WOLED
  • the electroluminescent display device of the present invention has an inverted structure. That is, the cathode is provided on the substrate, and the anode is located on the top of the electroluminescent display device.
  • the gate-source voltage Vgs of the driving thin film transistor is not affected by the deterioration characteristics of the OLED, and the drain current is only related to Vgs. Therefore, the problem of image sticking on the panel is effectively solved.
  • the electroluminescent display device of the present invention utilizes an inverted structure having the first light-emitting layer and the second light-emitting layer, wherein the first light-emitting layer is composed of red light quantum dots and green light quantum dots, and
  • the second light-emitting layer is an organic blue light-emitting layer, which combines the light emitted by the first light-emitting layer and the second light-emitting layer to form white light, and the light emission of the red light quantum dots and the green light quantum dots has a narrow band gap characteristic, and its color saturation Therefore, the red and green light separated by the color filter film of the display panel also have the characteristics of narrow band gap and high color saturation, so that the display panel can achieve excellent color gamut performance, effectively solving the shortcomings of traditional WOLED that cannot improve the color gamut performance And the problem of uneven brightness.

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

L'invention concerne un dispositif d'affichage électroluminescent, comprenant un substrat, une première électrode et une seconde électrode, une première couche empilée, une seconde couche empilée, et une couche de génération de charge. La première couche empilée est disposée sur la première électrode et comprend une première couche électroluminescente et une première couche de blocage de charge, la première couche électroluminescente étant préparée à partir d'un matériau à points quantiques. La seconde couche empilée est adjacente à la seconde électrode et comprend une seconde couche électroluminescente et une seconde couche de blocage de charge, et la seconde couche électroluminescente est préparée à partir d'un matériau électroluminescent organique. La couche de génération de charge est disposée entre la première couche empilée et la seconde couche empilée.
PCT/CN2019/104022 2019-05-21 2019-09-02 Dispositif d'affichage électroluminescent WO2020232911A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201910421521.7A CN110212104A (zh) 2019-05-21 2019-05-21 电致发光显示装置
CN201910421521.7 2019-05-21

Publications (1)

Publication Number Publication Date
WO2020232911A1 true WO2020232911A1 (fr) 2020-11-26

Family

ID=67787950

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2019/104022 WO2020232911A1 (fr) 2019-05-21 2019-09-02 Dispositif d'affichage électroluminescent

Country Status (2)

Country Link
CN (1) CN110212104A (fr)
WO (1) WO2020232911A1 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110808338A (zh) * 2019-10-10 2020-02-18 复旦大学 一种双面出光的串联式量子点器件
CN110707226B (zh) * 2019-10-16 2022-08-23 苏州大学 一种有机发光器件及其制备方法、发光装置
CN111029474A (zh) * 2019-11-14 2020-04-17 深圳市华星光电半导体显示技术有限公司 一种有机发光器件
CN114256428A (zh) * 2020-09-23 2022-03-29 北京小米移动软件有限公司 显示面板及显示装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102891262A (zh) * 2011-07-22 2013-01-23 海洋王照明科技股份有限公司 叠层有机电致发光器件及其制备方法
CN103280539A (zh) * 2012-04-03 2013-09-04 友达光电股份有限公司 有机发光二极管结构、制作其的方法及显示面板
US20140014896A1 (en) * 2012-07-16 2014-01-16 Samsung Electronics Co., Ltd. Light emitting diode device using charge accumulation and method of manufacturing the same
CN104362255A (zh) * 2014-10-21 2015-02-18 深圳市华星光电技术有限公司 白光oled器件结构
CN108039416A (zh) * 2017-12-06 2018-05-15 华南理工大学 基于量子点电致发光的叠层白光发光二极管及其制备方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101515632A (zh) * 2008-02-14 2009-08-26 财团法人山形县产业技术振兴机构 有机发光元件

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102891262A (zh) * 2011-07-22 2013-01-23 海洋王照明科技股份有限公司 叠层有机电致发光器件及其制备方法
CN103280539A (zh) * 2012-04-03 2013-09-04 友达光电股份有限公司 有机发光二极管结构、制作其的方法及显示面板
US20140014896A1 (en) * 2012-07-16 2014-01-16 Samsung Electronics Co., Ltd. Light emitting diode device using charge accumulation and method of manufacturing the same
CN104362255A (zh) * 2014-10-21 2015-02-18 深圳市华星光电技术有限公司 白光oled器件结构
CN108039416A (zh) * 2017-12-06 2018-05-15 华南理工大学 基于量子点电致发光的叠层白光发光二极管及其制备方法

Also Published As

Publication number Publication date
CN110212104A (zh) 2019-09-06

Similar Documents

Publication Publication Date Title
KR102277563B1 (ko) 백색 유기 발광 소자
KR101801244B1 (ko) 유기전계발광소자
WO2020030042A1 (fr) Substrat d'affichage à delo et son procédé de fabrication, et dispositif d'affichage
CN106981504B (zh) 一种显示面板及显示装置
WO2020232911A1 (fr) Dispositif d'affichage électroluminescent
US10566390B2 (en) Series connected quantum dot light-emitting device, panel and display device
WO2020233284A1 (fr) Panneau d'affichage et son procédé de préparation, et dispositif d'affichage
WO2016095335A1 (fr) Dispositif d'affichage oled et son procédé de fabrication
CN105914228B (zh) Oled器件与oled显示器
WO2017206213A1 (fr) Dispositif oled et écran oled
JP2012028064A (ja) 有機ｅｌ表示装置
US11094905B2 (en) Organic light-emitting display panel and electronic device thereof
WO2016155147A1 (fr) Dispositif électroluminescent organique à lumière bleue, procédé pour sa préparation, panneau d'affichage et appareil d'affichage
KR101815247B1 (ko) 전기루미네선스 디바이스
US20210336177A1 (en) Oled display panel and oled display device
KR102065366B1 (ko) 유기 발광 소자
KR20130072468A (ko) 유기전계 발광소자
US10249686B2 (en) Organic light-emitting device and method of manufacturing the same
KR101849583B1 (ko) 백색 유기 발광 표시 장치
KR101845309B1 (ko) 유기전계 발광소자
CN108448001A (zh) 一种发光器件、电致发光显示面板及显示装置
WO2019051878A1 (fr) Structure de dispositif oled
US8872170B2 (en) Image display system
KR100864758B1 (ko) 풀 컬러 유기 전기 발광 소자
KR101992901B1 (ko) 유기 발광 표시 장치 및 그 제조 방법

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 19929642

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 19929642

Country of ref document: EP

Kind code of ref document: A1