WO2017206137A1 - 一种异质结可饱和吸收镜及其制备方法、锁膜光纤激光器 - Google Patents

一种异质结可饱和吸收镜及其制备方法、锁膜光纤激光器 Download PDF

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WO2017206137A1
WO2017206137A1 PCT/CN2016/084492 CN2016084492W WO2017206137A1 WO 2017206137 A1 WO2017206137 A1 WO 2017206137A1 CN 2016084492 W CN2016084492 W CN 2016084492W WO 2017206137 A1 WO2017206137 A1 WO 2017206137A1
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heterojunction
antimony
substrate
saturable absorption
disulfide
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French (fr)
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闫培光
陈浩
王金章
邢凤飞
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Shenzhen University
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Shenzhen University
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
    • H01S3/1123—Q-switching
    • H01S3/113—Q-switching using intracavity saturable absorbers

Definitions

  • the invention belongs to the technical field of lasers, and in particular relates to a heterojunction saturable absorption mirror and a preparation method thereof, and a mode-locked fiber laser.
  • passive mode-locking technology is an effective way to achieve ultra-fast pulse output of fiber lasers, and the key technology of passive mode-locking is the need for saturable absorption in fiber laser resonators.
  • researchers have used a variety of saturable absorption effects to obtain passive mode-locked ultrafast pulse outputs in fiber lasers.
  • SESAM semiconductor Saturable Absorber
  • the present invention provides a heterojunction saturable absorption mirror and a preparation method thereof, aiming at overcoming the defects that the commercial SESAM is expensive, complicated in manufacturing process, and low in reliability.
  • a heterojunction saturable absorption mirror comprising a substrate, a heterojunction film overlying the substrate, and a protective film layer over the heterojunction film; the heterojunction film comprising at least two
  • the layer may be a saturable absorbing layer in which the materials of the respective saturable absorbing layers are different from each other.
  • the heterojunction saturable absorption mirror further includes a gold film layer between the substrate and the heterojunction film.
  • the gold film layer has a thickness of 500 - 1000 nm.
  • the protective film layer is a multilayer hexagonal boron nitride film.
  • the at least two layers of saturable absorbing layers are respectively a graphene layer, a transition metal oxy compound material layer, a topological insulator material layer, or a transition metal oxide material layer of any two or different materials. Wherein the transition metal oxy compound does not include an oxide.
  • the transition metal oxygenate material comprises tungsten dioxide, molybdenum disulfide, antimony disulfide, antimony diselenide, cobalt diselenide, cobalt disulfide, antimony diselenide, antimony telluride, disulfide Tin, tin diselenide, antimony disulfide, antimony diselenide, titanium disulfide, titanium diselide, antimony disulfide, antimony diselenide, zirconium disulfide, zirconium dihalide, molybdenum disulfide, tungsten disulfide , molybdenum diselenide, tungsten diselenide; Topological insulator materials include antimony telluride, antimony telluride, antimony telluride and antimony sulfide.
  • the substrate is any one of copper, silicon carbide or sapphire.
  • the invention also provides a preparation method of the heterojunction saturable absorption mirror, comprising the following steps:
  • Substrate preparation step polishing the substrate
  • Heterojunction preparation step placing the substrate in a reaction chamber using CVD
  • the method comprises sequentially plating the at least two layers of saturable absorbing layer on the gold film layer to form a heterojunction film;
  • Protective film preparation step a protective film layer is plated on the surface of the heterojunction film.
  • the preparation method A step of plating a gold film layer on the surface of the substrate is also included.
  • the invention also provides A mode-locked fiber laser comprising a resonant cavity for generating a laser, the resonant cavity comprising the heterojunction saturable absorption mirror described above, the heterojunction saturable absorption mirror for generating the resonant cavity Laser lock film.
  • the heterojunction saturable absorption mirror provided by the present invention comprises a heterojunction film composed of at least two different substances, effectively combining the respective advantages of various materials in the field of nonlinear optics;
  • the film layer can isolate the water vapor and oxygen in the air while oxidizing and eroding the heterojunction, and can conduct heat efficiently, and improve the thermal damage threshold of the insured and absorption mirror. Therefore, the heterojunction saturable absorption mirror prepared by the invention has the advantages of high damage threshold, simple structure and high reliability.
  • the preparation method of the heterojunction saturable absorption mirror provided by the invention adopts the CVD method, and the preparation process is simple and can be mass-produced.
  • the mode-locked fiber laser provided by the present invention including the heterojunction saturable absorption mirror, has excellent performance, simple structure and high reliability.
  • FIG. 1 is a schematic structural view of a heterojunction saturable absorption mirror according to an embodiment of the present invention
  • FIG. 2 is a schematic flow chart of a method for preparing a heterojunction saturable absorption mirror according to an embodiment of the present invention
  • FIG. 3 is a schematic view showing a process of depositing a gold plating film on a substrate in a method for preparing a heterojunction saturable absorption mirror according to an embodiment of the present invention
  • FIG. 4 is a schematic view showing a preparation process of a heterojunction film layer and a protective film layer in a method for preparing a heterojunction saturable absorption mirror according to an embodiment of the present invention
  • FIG. 5 is a schematic view showing the specific structure of a heterojunction saturable absorption mirror prepared by the preparation method provided by the embodiment of the present invention.
  • an embodiment of the present invention provides a heterojunction saturable absorption mirror comprising a substrate 101, a heterojunction film 102 plated on the substrate, and a protective film layer 103.
  • the substrate 101 may be made of copper, silicon carbide or sapphire.
  • the heterojunction film 102 is composed of two layers of different materials, including a graphene layer, a transition metal oxygenate material layer, a topological insulator material layer, or any two or different materials of different transition metal oxygenation material layers;
  • the transition metal oxy compound does not include an oxide, including tungsten dioxide, molybdenum disulfide, antimony disulfide, antimony diselenide, cobalt diselide, cobalt disulfide, antimony diselenide, diterpene Antimony, tin disulfide, tin diselenide, antimony disulfide, antimony diselenide, titanium disulfide, titanium diselenide, antimony disulfide, antimony diselenide, zirconium disulfide, zirconium dihalide, disulfide Molybdenum, tungsten disulfide, molybdenum diselenide, tungsten diselenide; topological insulator materials include antimony telluride,
  • the heterojunction may be composed of two or two combinations of the above three materials (graphene, transition metal sulfide, topological insulator), or a combination of different materials in the same material (eg, graphene/transition).
  • the heterojunction saturable absorption mirror may further include a gold film layer between the substrate and the heterojunction film, and the thickness of the gold film is ⁇ 500. Nm, preferably not higher than 1000 nm.
  • the working principle of the heterojunction saturable absorption mirror is to use it as a high reflection mirror of the laser.
  • the laser in the cavity is reflected by the heterojunction saturable absorption mirror, the laser can be saturated by the heterojunction.
  • the absorption mirror is modulated to achieve Q-switching or mode-locking.
  • the heterojunction saturable absorption mirror has a high damage threshold and can be used as a light mirror for broadband modulation of light, and can be used as a key device for pulse laser generation in a laser system.
  • an embodiment of the present invention provides a method for preparing the above heterojunction saturable absorption mirror, comprising the following steps:
  • Step S1 Substrate preparation: the substrate material is selected from a material having a high heat dissipation coefficient, such as copper, silicon carbide or sapphire.
  • the substrate material has a smooth plane after polishing, and a gold film is plated on the substrate material, and the thickness of the gold film is ⁇ 500. Nm, gold film as a broadband mirror for saturable absorption mirrors.
  • Step S2 Preparation of heterojunction film: coating by chemical vapor deposition.
  • TMDs transition metal sulfide
  • the substrate material prepared above is placed in a reaction chamber, and the gold film is coated in the direction of contact with the gas stream, using methane and hydrogen as Reaction material. Heating the substrate material to synthesize a large area of high-quality single-layer graphene on the surface of the gold film by methane and hydrogen; 2) changing the reaction material, controlling the gas flow rate, the temperature of the reaction chamber and the deposition time, etc., and the thickness required for growth on the surface of the graphene Transition metal sulfide film.
  • Step S3 Preparation of protective film layer: using a multi-layered hexagonal boron nitride film, hexagonal boron nitride is a hexagonal crystal system, has a graphite-like hierarchical structure, and each layer of the crystal structure has B, N
  • the atoms are arranged in a hexagonal ring network. There is a strong covalent bond between the atoms in the layer, so the structure is tight.
  • the layers are molecularly bonded and weakly combined, so they are easily weakened.
  • the film can isolate the water vapor and oxygen in the air and oxidize and erode the heterojunction while transmitting light, and can efficiently conduct heat and improve the thermal damage threshold of the insured and absorption mirror.
  • FIG. 3 is a preparation method of the heterojunction saturable absorption mirror provided by the embodiment.
  • FIG. 4 is a schematic view showing the preparation process of the heterojunction film layer and the protective film layer in the preparation method of the heterojunction saturable absorption mirror provided in the embodiment.
  • 1 is a substrate
  • 2 is a gold film layer
  • 3 is a graphene layer
  • 4 is a transition metal sulfide film layer
  • 5 is a protective film layer.
  • the heterojunction film preparation process of the invention utilizes a chemical vapor deposition method, and the preparation process is simple, and can be mass-produced, and thousands of heterojunction saturable absorption mirrors can be prepared each time.
  • the thickness and uniformity of the deposited heterojunction film can be controlled by controlling the temperature, time, etc. of the deposition during the deposition process. Among them, the temperature can be changed by the heating device in the vacuum chamber, and the deposition time can be programmed or manually controlled. This enables mass production, while making the heterojunction saturable absorption mirrors of the same specifications, and its bandwidth can be extended from visible light to infrared or even microwave.
  • the gold film layer 2 is located on the substrate 101
  • the heterojunction layer 102 is located on the gold film layer 5
  • the protective film layer 103 is located on the substrate 101.
  • the heterojunction layer 102 is composed of a graphene layer 3 and a transition metal sulfide film layer 4.
  • the resulting heterojunction saturable absorption mirror comprises a heterojunction layer 102 composed of two layers of different materials, a graphene layer 3 and a transition metal sulfide film layer 4, which effectively combines the two materials in the field of nonlinear optics.
  • the utility model has the advantages that the comprehensive performance of the obtained heterojunction saturable absorption mirror is remarkably improved;
  • the protective film layer 103 comprises a multi-layer hexagonal boron nitride film, which can isolate the water vapor in the air while transmitting light, The oxidation and erosion of oxygen on the heterojunction can efficiently conduct heat and increase the thermal damage threshold of the insured and absorption mirrors.
  • the heterojunction saturable absorption mirror prepared in this embodiment has the advantage of a high damage threshold.
  • the heterojunction saturable absorption mirror further includes a gold film layer as a broadband mirror of the saturable absorption mirror.
  • the heterojunction saturable absorption mirror provided by this embodiment can extend its bandwidth from visible light to infrared or even microwave.
  • the embodiment further provides a mode-locked fiber laser, comprising a resonant cavity, the resonant cavity comprising the heterojunction saturable absorption mirror described above, wherein the heterojunction saturable absorption mirror is used for the resonant cavity
  • the resulting laser lock film The mode-locked fiber laser has the advantages of the heterojunction saturable absorption mirror of the present invention, and has not only significantly improved performance, but also simple structure and high reliability compared with the existing mode-locked fiber laser.

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • Lasers (AREA)

Abstract

提供了一种异质结可饱和吸收镜，包括衬底（101），覆盖在衬底上的异质结薄膜（102）以及位于异质结薄膜之上的保护膜层（103）。异质结薄膜包括至少两层可饱和吸收层，其中各可饱和吸收层的材料互不相同。还提供了一种异质结可饱和吸收镜的制备方法，包括如下步骤：将衬底抛光；将衬底置于反应室内，采用CVD法在金膜层（2）上依次镀上至少两层可饱和吸收层，形成异质结薄膜；在异质结薄膜表面镀上保护膜层。提供的异质结可饱和吸收镜具有高损伤阈值，结构简单、成本低廉，可靠性高，制备方法简单，适于批量生产。

Description

一种异质结可饱和吸收镜及其制备方法、锁膜光纤激光器 技术领域
本发明属于激光器技术领域，尤其涉及一种异质结可饱和吸收镜及其制备方法、一种锁模光纤激光器。
 背景技术
利用被动锁模技术是光纤激光器实现超快脉冲输出的一种有效途径，而被动锁模的关键技术是光纤激光器谐振腔中需要具备可饱和吸收效应。目前，研究人员已经利用多种可饱和吸收效应在光纤激光器中获得被动锁模超快脉冲输出。一般来说，为了克服光纤激光锁模环境不稳定的缺点，研究人员通常采用SESAM（半导体可饱和吸收镜）来实现光纤激光器锁模超快脉冲输出。但由于商用SESAM价格昂贵、制作工艺复杂、可饱和吸收带宽窄、一般仅支持皮秒级别的脉冲输出，并且损伤阈值也较低，所以也不适用于全方位研究超快光纤激光器的动力学特性。因此，本领域内急需一种成本低廉、工艺简单、高性能的可饱和吸收体。
 技术问题
为解决上述技术问题，本发明提供了一种异质结可饱和吸收镜及其制备方法，旨在克服商用SESAM价格昂贵、制作工艺复杂、可靠性低的缺陷。
 技术解决方案
本发明是这样实现的： 一种异质结可饱和吸收镜，包括衬底、覆盖在所述衬底上的异质结薄膜以及位于所述异质结薄膜之上的保护膜层；所述异质结薄膜包括至少两层可饱和吸收层，其中各可饱和吸收层的材料互不相同。
进一步地 ，所述异质结可饱和吸收镜还包括金膜层，所述金膜层位于所述衬底与所述异质结薄膜之间。
进一步地 ，所述金膜层的厚度为 500 -1000 nm 。
进一步地 ，所述保护膜层为多层 六角氮化硼薄膜。
进一步地 ，所述至少两层可饱和吸收层分别为石墨烯层、过渡金属氧族化物材料层、拓扑绝缘体材料层中的任意两种或任意两种材料不同的 过渡金属氧族化物材料层 ；其中，所述过渡金属氧族化物不包括氧化物 。
进一步地 ， 所述过渡金属氧族化物材料包括二碲化钨、二碲化钼、二硫化铪、二硒化铪、二硒化钴、二碲化钴、二硒化铼、二碲化铼、二硫化锡、二硒化锡、二硫化铌、二硒化铌、二硫化钛、二硒化钛、二硫化钽、二硒化钽、二硫化锆、二碲化锆、二硫化钼，二硫化钨，二硒化钼，二硒化钨；所述 拓扑绝缘体材料包括 碲化锑 、 硒化铋、 碲化铋 及 硫化铋。
进一步地 ，所述衬底为铜片、碳化硅或蓝宝石中的任意一种。
本发明还提供了一种 所述的异质结可饱和吸收镜 的制备方法，包括如下步骤：
衬底制备步骤：将衬底抛光；
异质结制备步骤：将所述衬底置于反应室内，采用 CVD 法在所述金膜层上依次镀上所述至少两层可饱和吸收层，形成异质结薄膜；
保护膜制备步骤：在所述异质结薄膜表面镀上保护膜层。
进一步地 ，在所述 衬底制备步骤和所述异质结制备步骤之间，所述制备方法 还包括在衬底表面镀金膜层的步骤。
本发明还提供了 一种锁模光纤激光器，包括用于产生激光的谐振腔，所述谐振腔包括上述所述的异质结可饱和吸收镜，所述异质结可饱和吸收镜用于对所述谐振腔产生的激光锁膜。
 有益效果
有益效果：本发明提供的异质结可饱和吸收镜，其包含的异质结薄膜由至少两层不同物质构成，有效地结合了各种材料在非线性光学领域各自的优点；其包含的保护膜层可在透光的同时又能隔离空气中的水蒸气、氧气对异质结的氧化和侵蚀，又能高效传导热量，提高可保和吸收镜的热损伤阈值。因此本发明制备而成的异质结可饱和吸收镜具有高损伤阈值、结构简单、可靠性高等优点。同时本发明提供的异质结可饱和吸收镜的制备方法采用CVD法，制备过程简单，可大批量生产。此外，本发明提供的锁模光纤激光器，包括所述的异质结可饱和吸收镜，不仅性能极佳，而且结构简单、可靠性高。
 附图说明
图1是本发明实施例提供的异质结可饱和吸收镜的结构示意图；
图2是本发明实施例提供的异质结可饱和吸收镜的制备方法流程示意图；
图3是本发明实施例提供的异质结可饱和吸收镜的制备方法中衬底镀金膜过程示意图；
图4是本发明实施例提供的异质结可饱和吸收镜的制备方法中异质结膜层和保护膜层制备过程示意图；
图5本发明实施例提供的制备方法制得的异质结可饱和吸收镜的具体结构示意图。
 本发明的实施方式
为了使本发明的目的、技术方案及优点更加清楚明白，以下结合附图及实施例，对本发明进行进一步详细说明。
如图1所示，本发明实施例提供了一种异质结可饱和吸收镜，包括衬底101，镀在衬底上的异质结薄膜102以及保护膜层103。在本实施例中，衬底101可采用铜片、碳化硅或者蓝宝石。异质结薄膜102由两层不同材料组成，包括石墨烯层、过渡金属氧族化物材料层、拓扑绝缘体材料层中的任意两种或任意两种材料不同的过渡金属氧族化物材料层；其中，所述过渡金属氧族化物不包括氧化物，包括二碲化钨、二碲化钼、二硫化铪、二硒化铪、二硒化钴、二碲化钴、二硒化铼、二碲化铼、二硫化锡、二硒化锡、二硫化铌、二硒化铌、二硫化钛、二硒化钛、二硫化钽、二硒化钽、二硫化锆、二碲化锆、二硫化钼，二硫化钨，二硒化钼，二硒化钨；拓扑绝缘体材料包括碲化锑、硒化铋及碲化铋、硫化铋。所述异质结的构成可以是上述三种材料（石墨烯，过渡金属硫化物，拓扑绝缘体）的两两组合，也可是同一类材料里面不同种材料的两两组合（如：石墨烯/过渡金属硫化物异质结，石墨烯/拓扑绝缘体异质结，硫化钼/硫化钨异质结）。
进一步地，所述异质结可饱和吸收镜还可以包括金膜层，所述金膜层位于所述衬底与所述异质结薄膜之间，金膜厚度≥500 nm，优选不高于1000nm。
这种异质结可饱和吸收镜的工作原理是，将其作为激光器的一个高反射镜，当谐振腔内的激光被该异质结可饱和吸收镜反射时，激光可被异质结可饱和吸收镜调制，实现调Q或锁模。这种异质结可饱和吸收镜具有高损伤阈值，可对光进行宽带调制的同时作为光的反射镜，可用于激光系统中脉冲激光产生的关键器件。
如图2所示，本发明一实施例提供了上述异质结可饱和吸收镜的制备方法，包括如下步骤：
步骤S1：衬底制备：衬底材料选择散热系数高的材料，如铜片、碳化硅或蓝宝石，衬底材料经过抛光后具有光滑平面，在衬底材料上镀金膜，金膜厚度≥500 nm，金膜作为可饱和吸收镜的宽带反射镜。
步骤S2：异质结薄膜制备：采用化学气相沉积法进行镀膜。以石墨烯/过渡金属硫化物（TMDs）异质结为例说明：1）将上述制备的衬底材料置于反应室内，镀有金膜的面朝与气流接触的方向，以甲烷和氢气作为反应材料。加热衬底材料使甲烷和氢气在金膜表面合成大面积的高质量单层石墨烯；2）更换反应材料，控制气流速率，反应室温度和沉积时间等参数，在石墨烯表面生长所需厚度的过渡金属硫化物薄膜。
步骤S3：保护膜层制备：采用多层六角氮化硼薄膜，六方氮化硼属六方晶系，具有类似石墨的层次结构，其晶体结构的每一层有B、N 原子相间排列成六角环状网络。层内原子之间呈很强的共价结合，所以结构紧密。层间为分子健结合，结合弱，故容易削弱。这种薄膜在透光的同时又能隔离空气中的水蒸气、氧气对异质结的氧化和侵蚀，又能高效传导热量，提高可保和吸收镜的热损伤阈值。
上述所述的异质结可饱和吸收镜的制备过程及各制备阶段的产品膜层结构具体结合图3和图4所示，图3是实施例提供的异质结可饱和吸收镜的制备方法中衬底镀金膜过程示意图，图4是实施例提供的异质结可饱和吸收镜的制备方法中异质结膜层和保护膜层制备过程示意图。其中1为衬底，2为金膜层，3为石墨烯层，4为过渡金属硫化物薄膜层，5为保护膜层。
本发明的异质结薄膜制备过程利用化学气相沉积法，制备过程简单，可大批量生产，每次可以制备上千块异质结可饱和吸收镜。同时，在沉积过程中，通过控制沉积的温度、时间等，可以控制沉积的异质结薄膜的厚度和均匀性。其中，温度可以通过真空室内加热装置改变、沉积时间可以程序控制或人工控制。由此可大批量生产，同时使制作的异质结可饱和吸收镜规格一致，且其带宽可从可见光拓展到红外甚至微波。
如图5所示，为本实施例所得的异质结可饱和吸收镜，金膜层2位于衬底101之上，异质结层102位于金膜层5之上，保护膜层103位于异质结层102之上；其中异质结层102由石墨烯层3和过渡金属硫化物薄膜层4构成。
所得的异质结可饱和吸收镜包含的异质结层102由石墨烯层3和过渡金属硫化物薄膜层4两层不同物质构成，有效地结合了这两种材料在非线性光学领域各自的优点，使制得的异质结可饱和吸收镜综合性能显著提高；其包含的保护膜层103，采用多层六角氮化硼薄膜，可在透光的同时又能隔离空气中的水蒸气、氧气对异质结的氧化和侵蚀，又能高效传导热量，提高可保和吸收镜的热损伤阈值。因此本实施例制备而成的异质结可饱和吸收镜具有高损伤阈值的优点。所述异质结可饱和吸收镜进一步所包括的金膜层，作为可饱和吸收镜的宽带反射镜。本实施例所提供的异质结可饱和吸收镜，其带宽可从可见光拓展到红外甚至微波。
本实施例还提供了一种锁模光纤激光器，包括谐振腔，所述谐振腔包括上述所述的异质结可饱和吸收镜，所述异质结可饱和吸收镜用于对所述谐振腔产生的激光锁膜。该锁模光纤激光器具备了本发明的异质结可饱和吸收镜所具有的优点，相比现有的锁模光纤激光器，不仅性能显著提高，而且结构简单、可靠性高。
以上所述仅为本发明的较佳实施例而已，并不用以限制本发明，凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等，均应包含在本发明的保护范围之内。

Claims (10)

  1. 一种异质结可饱和吸收镜，其特征在于，包括衬底、覆盖在所述衬底上的异质结薄膜以及位于所述异质结薄膜之上的保护膜层；所述异质结薄膜包括至少两层可饱和吸收层，其中各可饱和吸收层的材料互不相同。
  2. 如权利要求1所述的异质结可饱和吸收镜，其特征在于，所述异质结可饱和吸收镜还包括金膜层，所述金膜层位于所述衬底与所述异质结薄膜之间。
  3. 如权利要求1所述的异质结可饱和吸收镜，其特征在于，所述金膜层的厚度为500-1000nm。
  4. 如权利要求1所述的异质结可饱和吸收镜，其特征在于，所述保护膜层为多层六角氮化硼薄膜。
  5. 如权利要求1所述的异质结可饱和吸收镜，其特征在于，所述至少两层可饱和吸收层分别为石墨烯层、过渡金属氧族化物材料层、拓扑绝缘体材料层中的任意两种或任意两种材料不同的过渡金属氧族化物材料层；其中，所述过渡金属氧族化物不包括氧化物。
  6. 如权利要求4所述的异质结可饱和吸收镜，其特征在于，所述过渡金属氧族化物材料包括二碲化钨、二碲化钼、二硫化铪、二硒化铪、二硒化钴、二碲化钴、二硒化铼、二碲化铼、二硫化锡、二硒化锡、二硫化铌、二硒化铌、二硫化钛、二硒化钛、二硫化钽、二硒化钽、二硫化锆、二碲化锆、二硫化钼，二硫化钨，二硒化钼，二硒化钨；所述拓扑绝缘体材料包括碲化锑、硒化铋、碲化铋及硫化铋。
  7. 如权利要求1所述的异质结可饱和吸收镜，其特征在于，所述衬底为铜片、碳化硅或蓝宝石中的任意一种。
  8. 一种如权利要求1所述的异质结可饱和吸收镜的制备方法，其特征在于，包括如下步骤：
    衬底制备步骤：将衬底抛光；
    异质结制备步骤：将所述衬底置于反应室内，采用CVD法在所述金膜层上依次镀上所述至少两层可饱和吸收层，形成异质结薄膜；
    保护膜制备步骤：在所述异质结薄膜表面镀上保护膜层。
  9. 如权利要求8所述的制备方法，其特征在于，在所述衬底制备步骤和所述异质结制备步骤之间，所述制备方法还包括在衬底表面镀金膜层的步骤。
  10. 一种锁模光纤激光器，包括用于产生激光的谐振腔，其特征在于，所述谐振腔包括权利要求1～7任意一项所述的异质结可饱和吸收镜，所述异质结可饱和吸收镜用于对所述谐振腔产生的激光锁膜。
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