WO2018103646A1 - 基于CH3NH3PbI3材料的HEMT/HHMT器件的制备方法 - Google Patents

基于CH3NH3PbI3材料的HEMT/HHMT器件的制备方法 Download PDF

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WO2018103646A1
WO2018103646A1 PCT/CN2017/114674 CN2017114674W WO2018103646A1 WO 2018103646 A1 WO2018103646 A1 WO 2018103646A1 CN 2017114674 W CN2017114674 W CN 2017114674W WO 2018103646 A1 WO2018103646 A1 WO 2018103646A1
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pbi
light absorbing
transport layer
sputtering
absorbing layer
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PCT/CN2017/114674
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English (en)
French (fr)
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贾仁需
元磊
汪钰成
庞体强
张玉明
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西安电子科技大学
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Priority claimed from CN201611123708.1A external-priority patent/CN106654011B/zh
Priority claimed from CN201611124458.3A external-priority patent/CN106784320B/zh
Priority claimed from CN201611122943.7A external-priority patent/CN106505149B/zh
Priority claimed from CN201710074139.4A external-priority patent/CN106876489B/zh
Application filed by 西安电子科技大学 filed Critical 西安电子科技大学
Publication of WO2018103646A1 publication Critical patent/WO2018103646A1/zh
Priority to US16/120,244 priority Critical patent/US10332691B2/en

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Definitions

  • the invention belongs to the field of integrated circuit technology, and in particular relates to a preparation method of a HEMT/HHMT device based on CH 3 NH 3 PbI 3 material.
  • HEMT High Electron Mobility Transistor
  • High Hole Mobility Transistor High Hole Mobility Transistor
  • organic/inorganic perovskite CH 3 NH 3 PbI 3
  • the ordered combination of organic groups and inorganic groups in organic/inorganic perovskites gives a long-range ordered crystal structure and combines the advantages of organic and inorganic materials.
  • the high mobility of the inorganic component imparts good electrical properties to the hybrid perovskite; the self-assembly and film-forming properties of the organic component make the preparation process of the hybrid perovskite film simple and low-cost, and can also be at room temperature. get on.
  • the high light absorption coefficient of the hybrid perovskite itself is also the capital that the hybrid perovskite can be applied in photovoltaic materials.
  • the present invention proposes a method for preparing a HEMT device based on a CH 3 NH 3 PbI 3 material, which can greatly improve photoelectric conversion efficiency and enhance device performance.
  • a method for preparing a HEMT device based on CH 3 NH 3 PbI 3 material proposed by the embodiment of the present invention.
  • the method includes:
  • Step 1 selecting an Al 2 O 3 substrate
  • Step 2 making a source electrode and a drain electrode
  • Step 3 forming a first electron transport layer on the surface of the source electrode, the drain electrode, and the Al 2 O 3 substrate not covered by the source electrode and the drain electrode;
  • Step 4 preparing a CH 3 NH 3 PbI 3 material on the surface of the first electron transport layer to form a first light absorbing layer;
  • Step 5 Form a gate electrode on the surface of the first light absorbing layer to complete preparation of the HEMT device.
  • the embodiment of the invention proposes a preparation method of another HHMT device based on CH 3 NH 3 PbI 3 material.
  • the method includes:
  • Step a selecting an Al 2 O 3 substrate
  • Step b making a source electrode and a drain electrode
  • Step c forming a first hole transport layer on the surface of the source electrode, the drain electrode, and the Al 2 O 3 substrate not covered by the source electrode and the drain electrode;
  • Step d preparing a CH 3 NH 3 PbI 3 material on the surface of the first hole transport layer to form a third light absorbing layer;
  • Step e forming a gate electrode on the surface of the third light absorbing layer to complete preparation of the HEMT device.
  • the HEMT/HHMT device of the embodiment of the invention has the following advantages:
  • CH 3 NH 3 PbI 3 as a light absorbing layer provides a large amount of electrons/holes to the channel, and has high mobility, fast switching speed, enhanced light absorption and light utilization efficiency, increased photogenerated carriers, and enhanced transmission characteristics.
  • the PCBM material is added to the light absorbing layer to form a heterojunction, which can improve the quality of the light absorbing layer film by filling the holes and vacancies, thereby generating larger crystal grains and less grain boundaries, and absorbing more Light produces photogenerated carriers that enhance device performance.
  • a PCBM material is added between the light absorbing layer and the electron transport layer, and the quality of the light absorbing layer film can be improved by the interface defects between the passivation layers to enhance the device performance.
  • FIG. 1 is a schematic diagram of a method for preparing a HEMT device based on CH 3 NH 3 PbI 3 material according to an embodiment of the present invention
  • FIG. 2 is a schematic cross-sectional view of an N-type bidirectional HEMT device based on CH 3 NH 3 PbI 3 material according to an embodiment of the present invention
  • FIG. 3 is a top plan view of an N-type bidirectional HEMT device based on CH 3 NH 3 PbI 3 material according to an embodiment of the present invention
  • 4a-4h are schematic diagrams showing a method for preparing an N-type bidirectional HEMT device based on CH 3 NH 3 PbI 3 material according to an embodiment of the present invention
  • FIG. 5 is a schematic structural diagram of a first mask according to an embodiment of the present invention.
  • FIG. 6 is a schematic structural diagram of a second mask according to an embodiment of the present invention.
  • FIG. 7 is a schematic cross-sectional view of an enhanced heterojunction HEMT based on CH 3 NH 3 PbI 3 material according to an embodiment of the present invention
  • FIG. 8 is a schematic cross-sectional view of an enhanced heterojunction HEMT based on CH 3 NH 3 PbI 3 material according to an embodiment of the present invention
  • FIG. 9 is a schematic cross-sectional view of another enhanced heterojunction HEMT based on CH 3 NH 3 PbI 3 material according to an embodiment of the present invention.
  • 10a-10f are schematic diagrams showing a method for preparing an enhanced heterojunction HEMT based on CH 3 NH 3 PbI 3 material according to an embodiment of the present invention
  • FIG. 11 is a schematic structural diagram of a third physical mask according to an embodiment of the present invention.
  • FIG. 12 is a schematic structural diagram of a fourth physical mask according to an embodiment of the present invention.
  • FIG. 13 is a schematic cross-sectional view of a P-type bidirectional HHET device based on CH 3 NH 3 PbI 3 material according to an embodiment of the present invention
  • FIG. 14 is a schematic top plan view of a P-type bidirectional HHET device based on CH 3 NH 3 PbI 3 material according to an embodiment of the present invention
  • 15a-15h are schematic diagrams showing a method for preparing a P-type bidirectional HHET device based on CH 3 NH 3 PbI 3 material according to an embodiment of the present invention
  • FIG. 16 is a schematic structural diagram of a fifth mask according to an embodiment of the present invention.
  • FIG. 17 is a schematic structural diagram of a sixth mask according to an embodiment of the present invention.
  • FIG. 18 is a schematic cross-sectional view of an enhanced heterojunction HHMT based on a CH 3 NH 3 PbI 3 material according to an embodiment of the present invention
  • FIG. 19 is a top plan view of an enhanced heterojunction HHMT based on CH 3 NH 3 PbI 3 material according to an embodiment of the present invention.
  • 20a-20f are schematic diagrams showing a method for preparing an enhanced heterojunction HHMT based on CH 3 NH 3 PbI 3 material according to an embodiment of the present invention
  • FIG. 21 is a schematic structural diagram of a seventh physical mask according to an embodiment of the present invention.
  • FIG. 22 is a schematic structural diagram of an eighth physical mask according to an embodiment of the present invention.
  • FIG. 1 is a schematic diagram of a method for preparing a HEMT device based on CH 3 NH 3 PbI 3 material according to an embodiment of the present invention. This embodiment focuses on the description of the HMET device, which may include:
  • Step 1 selecting an Al 2 O 3 substrate
  • Step 2 making a source electrode and a drain electrode
  • Step 3 forming a first electron transport layer on the surface of the source electrode, the drain electrode, and the Al 2 O 3 substrate not covered by the source electrode and the drain electrode;
  • Step 4 preparing a CH 3 NH 3 PbI 3 material on the surface of the first electron transport layer to form a first light absorbing layer;
  • Step 5 Form a gate electrode on the surface of the first light absorbing layer to complete preparation of the HEMT device.
  • a large amount of electrons/holes are provided to the channel by using CH 3 NH 3 PbI 3 as a light absorbing layer, which has high mobility, fast switching speed, enhanced light absorption and light utilization efficiency, and increased photogenerated carriers.
  • the transmission characteristics are enhanced, and the photoelectric conversion efficiency is large.
  • FIG. 2 is a schematic cross-sectional view of an N-type bidirectional HEMT device based on CH 3 NH 3 PbI 3 material according to an embodiment of the present invention
  • FIG. 3 is a schematic diagram of CH based on an embodiment of the present invention.
  • the bidirectional HMET device is mainly introduced on the basis of the above embodiments.
  • the bidirectional HEMT may include: a substrate 101, a conductive glass 102, a second light absorbing layer 103, a second electron transport layer 104, a source/drain electrode 105, a first electron transport layer 106, a first light absorbing layer 107, and a gate. Electrode 108.
  • the materials of the substrate 101, the conductive glass 102, the second light absorbing layer 103, the second electron transport layer 104, the source/drain electrodes 105, the first electron transport layer 106, the first light absorbing layer 107, and the gate electrode 108 are sequentially Vertically distributed from bottom to top to form a multi-layer symmetrical structure to form a bidirectional high electron mobility transistor.
  • the substrate 101 may be a sapphire substrate, the source and drain electrodes 105 may be made of a gold material, the second electron transport layer 104, the first electron transport layer 106 may be made of a TiO 2 material, and the second light absorbing layer 103 and the first light.
  • the absorbing layer 107 may be a CH 3 NH 3 PbI 3 material, the conductive glass 102 may be an FTO material, and the gate electrode 108 may be a gold material.
  • FIG. 4 a - FIG. 4h are schematic diagrams showing a method for preparing an N-type bidirectional HEMT device based on CH 3 NH 3 PbI 3 material according to an embodiment of the present invention
  • 5 is a schematic structural diagram of a first mask according to an embodiment of the present invention
  • FIG. 6 is a schematic structural diagram of a second mask provided by an embodiment of the present invention.
  • the preparation method of the N-type bidirectional HEMT device based on CH 3 NH 3 PbI 3 material of the present embodiment is as follows:
  • Step 101 Referring to Fig. 4a, a sapphire Al 2 O 3 substrate 101 having a thickness of 200 ⁇ m to 600 ⁇ m is prepared.
  • the substrate is made of sapphire Al 2 O 3.
  • Reason Due to its low price and good insulation performance, the longitudinal leakage of the bidirectional HEMT high electron mobility transistor is effectively prevented.
  • the substrate can be replaced by a thermal etching of 1 ⁇ m of SiO 2 on a 200 ⁇ m-600 ⁇ m silicon substrate, but the insulating effect is deteriorated after the replacement, and the fabrication process is more complicated.
  • Step 102 Referring to FIG. 4b, a conductive glass FTO 102 is prepared on the sapphire substrate 101 prepared in step 101 using a sol method. Specifically, the conductive glass FTO 102 may have a thickness of 100 to 300 nm.
  • Step 103 See Figure 4c, on the FTO conductive glass 102 prepared in the step of spin coating 102 CH 3 NH 3 PbI second light-absorbing material layer 3 103.
  • the CH 3 NH 3 PbI 3 light absorbing layer 103 was spin-coated on the FTO conductive glass obtained in the step 102 by a single spin coating method. Specifically, PbI 654mg of CH 2 and 217mg of 3 NH 3 I was added followed by DMSO: GBL give PbI 2 and CH mixed solution of 3 NH 3 I; and the PbI 2 and CH mixed solution of 3 NH 3 I at 80 Stirring at a degree of Celsius for two hours to obtain a stirred solution; the stirred solution was allowed to stand at 80 ° C for 1 hour to obtain a CH 3 NH 3 PbI 3 solution; and the CH 3 NH 3 PbI 3 solution was added dropwise to the conductive obtained in the step 102. The glass was annealed at 100 ° C for 20 minutes to form a CH 3 NH 3 PbI 3 light absorbing layer having a thickness of 200 to 300 nm.
  • Step 104 Referring to FIG. 4d, a second electron transport layer 104 is formed by depositing a TiO 2 material on the second light absorbing layer 103 by a magnetron sputtering process or an atomic layer deposition process.
  • the target used in the magnetron sputtering process is a TiO 2 target with a purity mass percentage >99.99%, a target diameter of 50 mm, and a thickness of 1.5-3 mm.
  • the cavity of the magnetron sputtering device is treated with high purity argon gas. After 5 minutes of washing, vacuuming was performed, the degree of vacuum was 1.3 ⁇ 10 -3 -3 ⁇ 10 -3 Pa, and then argon gas and oxygen were sequentially introduced, and the volume ratio of argon gas to oxygen gas was controlled by adjusting the flow rate to be 9:1.
  • the pressure was maintained at 2.0 Pa, the sputtering power was 60-80 W, and after annealing, the annealing treatment was carried out at 70 ° C to 150 ° C, whereby a TiO 2 electron transport layer was prepared on the light absorbing layer, and the transport layer had a thickness of 50 to 200 nm.
  • Step 105 Referring to Fig. 4e and Fig. 5, a source/drain electrode 105 made of a gold material is magnetron sputtered on the second light absorbing layer 104 of CH 3 NH 3 PbI 3 using a first mask.
  • the sputtering target is made of gold with a mass ratio of >99.99%, and Ar with a mass percent purity of 99.999% is used as a sputtering gas to pass into the sputtering chamber.
  • the chamber of the magnetron sputtering device is treated with high purity argon gas. Wash for 5 minutes and then evacuate.
  • the source and drain electrode gold were prepared under the conditions of a vacuum of 6 ⁇ 10 -4 -1.3 ⁇ 10 -3 Pa, an argon flow rate of 20-30 cm 3 /sec, a target base distance of 10 cm and an operating power of 20 W-100 W.
  • the electrode thickness is from 100 nm to 300 nm.
  • the source/drain electrode 105 may be replaced by a metal such as Al, Ti, Ni, Ag, or Pt. Among them, Au, Ag and Pt are chemically stable; Al, Ti and Ni are low in cost.
  • Step 106 Referring to FIG. 4f, an electron transport layer 106 of TiO 2 material is deposited by a magnetron sputtering process or an atomic layer deposition process.
  • the target used in the magnetron sputtering process is a TiO 2 target with a purity percentage of >99.99%, a target diameter of 50 mm, a thickness of 1.5 to 3 mm, and high purity argon before sputtering.
  • the cavity of the magnetron sputtering equipment is cleaned for 5 minutes, then vacuumed, the degree of vacuum is 1.3 ⁇ 10 -3 to 3 ⁇ 10 -3 Pa, then argon and oxygen are sequentially introduced, and argon and oxygen are controlled by adjusting the flow rate.
  • the volume ratio is 9:1, the total pressure is maintained at 2.0 Pa, the sputtering power is 60-80 W, and after annealing, the annealing treatment is performed at 70 ° C to 150 ° C, thereby preparing TiO 2 on the substrate and the source and drain electrodes.
  • the electron transport layer of the material has a transport layer thickness of 150-500 nm.
  • Step 107 Referring to FIG. 4g, the CH 3 NH 3 PbI 3 material is spin-coated on the first electron transport layer 106 to form the first light absorbing layer 107.
  • the CH 3 NH 3 PbI 3 light absorbing layer was spin-coated on the first electron transport layer 107 obtained in the step 107 by a single spin coating method, and 654 mg of PbI 2 and 217 mg of CH 3 NH 3 I were successively added to DMSO:GBL to obtain a mixed solution of PbI 2 and CH 3 NH 3 I; a mixed solution of PbI 2 and CH 3 NH 3 I was stirred at 80 ° C for two hours to obtain a stirred solution; and the stirred solution was allowed to stand at 80 ° C for 1 hour.
  • the CH 3 NH 3 PbI 3 solution is obtained; the CH 3 NH 3 PbI 3 solution is added dropwise to the TiO 2 film obtained in the step 106, and annealed at 100 ° C for 20 minutes to form a CH 3 NH 3 PbI 3 light absorbing layer.
  • a light absorbing layer 107 has a thickness of 200 to 300 nm.
  • Step 108 Referring to Figures 4h and 6, the gate electrode 108 of the gold material is magnetron sputtered on the CH 3 NH 3 PbI 3 light absorbing layer 107 using a second mask.
  • the gate electrode gold material is magnetron-sputtered on the light absorbing layer CH 3 NH 3 PbI 3 obtained in step 107 by a magnetron sputtering process, and the sputtering target is made of gold having a mass ratio purity of >99.99%, and the mass percentage purity is 99.999%.
  • the Ar was passed as a sputtering gas into the sputtering chamber. Before sputtering, the cavity of the magnetron sputtering apparatus was cleaned with high purity argon gas for 5 minutes, and then evacuated.
  • the gate electrode gold is prepared under the conditions of a vacuum of 6 ⁇ 10 -4 -1.3 ⁇ 10 -3 Pa, an argon flow rate of 20-30 cm 3 /sec, a target base distance of 10 cm, and an operating power of 20 W-100 W.
  • the electrode thickness is from 100 nm to 300 nm.
  • the gate electrode 108 may be replaced by a metal such as Al, Ti, Ni, Ag, or Pt. Among them, Au, Ag and Pt are chemically stable; Al, Ti and Ni are low in cost.
  • the present invention by adopting a symmetrical light absorbing layer, more light can be absorbed to generate photogenerated carriers, thereby enhancing device performance.
  • transparent sapphire to grow transparent conductive glass FTO as a bottom gate electrode, it can be realized.
  • Light can illuminate the light absorbing layer to enhance device performance; again, a large amount of electrons are supplied to the channel by CH 3 NH 3 PbI 3 to form a bidirectional HEMT high electron mobility transistor with high mobility, fast switching speed, and light. The absorption is enhanced, the photogenerated carriers are increased, the transmission characteristics are enhanced, and the photoelectric conversion efficiency is large.
  • FIG. 7 is a schematic cross-sectional view of an enhanced heterojunction HEMT based on CH 3 NH 3 PbI 3 material according to an embodiment of the present invention
  • FIG. 8 is a schematic diagram of an embodiment of the present invention.
  • the enhanced heterojunction HEMT may include an Al 2 O 3 substrate 201, a light reflecting layer 202, a source/drain electrode 203, a first electron transport layer 204, a first light absorbing layer 205, and a gate electrode 206.
  • the sapphire substrate 201, the light reflecting layer 202, the source/drain electrodes 203, the first electron transporting layer 204, the first light absorbing layer 205, and the gate electrode 206 are sequentially formed in a multilayer structure.
  • the reflective layer 202 may be made of a silver material or a material such as Al or Cu.
  • the source/drain electrode 203 may be made of a gold material or a metal such as Al, Ti, Ni, Ag, or Pt. Among them, Au, Ag, and Pt have stable chemical properties, while Al, Ti, and Ni have low cost.
  • the first electron transport layer 204 may be a TiO 2 material
  • the first light absorbing layer 205 may be a CH 3 NH 3 PbI 3 /PCBM material
  • the gate electrode 206 may be a gold material.
  • FIG. 9 is a schematic cross-sectional view of another enhanced heterojunction HEMT based on CH 3 NH 3 PbI 3 material according to an embodiment of the present invention.
  • the enhanced heterojunction HEMT can also include an active layer 207, which can be a PCBM material.
  • the first light absorbing layer 205 may simply employ a CH 3 NH 3 PbI 3 material.
  • the PCBM material is a fullerene derivative having a molecular formula of [6,6]-phenyl-C61-butyric acid methyl ester. Due to its good solubility, high electron mobility, which forms a good phase separation with common polymer donor materials, has become the standard for electron acceptors of organic solar cells.
  • the present invention utilizes this feature and is very clever for use in the HMET device shown in Fig. 7 or Fig. 9, as an active layer of a buffering property, which can improve the quality of the light absorbing layer film by filling holes and vacancies. This results in larger grains and fewer grain boundaries, absorbing more light to generate photogenerated carriers, enhancing device performance.
  • the CH 3 NH 3 PbI 3 material is highly suitable for photodetection in the visible range due to its high responsiveness in the near-infrared and visible range, and has high photoelectric sensitivity and high electron mobility. Better conductivity is an ideal material for the preparation of HEMT.
  • FIG. 10a - FIG. 10f are schematic diagrams showing a preparation method of an enhanced heterojunction HEMT based on CH 3 NH 3 PbI 3 material according to an embodiment of the present invention.
  • FIG. 11 is a schematic structural diagram of a third physical mask according to an embodiment of the present invention
  • FIG. 12 is a schematic structural diagram of a fourth physical mask according to an embodiment of the present invention.
  • the preparation method of the enhanced heterojunction HEMT is described in detail as follows:
  • Step 201 Referring to Fig. 10a, an Al 2 O 3 substrate 201 is prepared having a thickness of 200 ⁇ m to 600 ⁇ m.
  • Step 202 Referring to FIG. 10b, a reflective layer 202 is formed on the gate electrode of the magnetron sputtered silver material on the back side of the Al 2 O 3 substrate 201.
  • the silver material is magnetron sputtered on the back surface of the substrate obtained by the magnetron sputtering process in the step 201.
  • the sputtering target is made of silver having a mass ratio of purity >99.99%, and the mass percentage purity of 99.999% is used as the sputtering gas.
  • the cavity, before sputtering, the chamber of the magnetron sputtering apparatus was cleaned with high purity argon gas for 5 minutes, and then evacuated.
  • a reflective silver mirror is prepared under conditions of a vacuum of 6 ⁇ 10 -4 to 1.3 ⁇ 10 -3 Pa, an argon flow rate of 20-30 cm 3 /sec, a target base distance of 10 cm, and a working power of 20 W-100 W.
  • the electrode thickness is from 100 nm to 300 nm.
  • Step 203 Referring to FIG. 10c and FIG. 11, a source/drain electrode 203 is formed by magnetron sputtering Au material on the Al 2 O 3 substrate 201 using a third physical mask.
  • the sputtering target is made of gold with a mass ratio of >99.99%, and Ar with a mass percent purity of 99.999% is used as a sputtering gas to pass into the sputtering chamber.
  • the chamber of the magnetron sputtering device is treated with high purity argon gas. Wash for 5 minutes and then evacuate.
  • the source-drain electrode gold is prepared under the conditions of a vacuum of 6 ⁇ 10 -4 to 1.3 ⁇ 10 -3 Pa, an argon flow rate of 20-30 cm 3 /sec, a target base distance of 10 cm, and an operating power of 20 W-100 W.
  • the electrode thickness is from 100 nm to 300 nm.
  • Step 204 Referring to FIG. 10d, the first electron transport layer 204 is formed by depositing TiO 2 material by a magnetron sputtering process or an atomic layer deposition process on the source/drain electrode 203 prepared in step 203 and the uncovered substrate.
  • the target used in the magnetron sputtering process is a TiO 2 target with a purity mass percentage >99.99%, a target diameter of 50 mm, and a thickness of 1.5-3 mm.
  • the cavity of the magnetron sputtering device is treated with high purity argon gas.
  • the first electron transport layer 204 has a thickness of 50 to 200 nm.
  • Step 205 Referring to FIG. 10e, a first light absorbing layer 205 is prepared on the first electron transport layer 204 by a single spin coating method.
  • the CH 3 NH 3 PbI 3 material was spin-coated on the first electron transport layer 204 obtained in the step 204 by a single spin coating method, and 654 mg of PbI 2 and 217 mg of CH 3 NH 3 I were successively added to DMSO:GBL to obtain PbI 2 .
  • the first light absorbing layer 205 of PbI 3 /PCBM has a thickness of 200 to 300 nm.
  • Step 206 Referring to FIG. 10f and FIG. 12, the gate electrode 206 is magnetron-sputtered on the first light absorbing layer 205 using a fourth physical mask.
  • Magnetron sputtering is used to magnetron sputter the gold material on the light absorbing layer obtained in step 205.
  • the sputtering target is made of gold having a mass ratio of purity >99.99%, and Ar having a mass percentage purity of 99.999% is used as a sputtering gas.
  • the gate electrode 206 is prepared under the condition that the degree of vacuum is 6 ⁇ 10 ⁇ 4 ⁇ 1.3 ⁇ 10 ⁇ 3 Pa, the flow rate of argon gas is 20-30 cm 3 /sec, the target base distance is 10 cm, and the working power is 20 W-100 W.
  • the gate electrode 206 has a thickness of 100 nm to 300 nm.
  • step 205 can be replaced with:
  • Step 205' using a spin-on active layer on the first electron transport layer 204, the mass concentration of the PCBM material is 8 mg/ml, preferably 16 ml.
  • the solvent of the active layer solution is selected from chlorobenzene, spin-coated in a glove box filled with an inert gas, and then annealed at 50 ° C - 200 ° C for 10 minutes - 100 minutes.
  • the thickness of the active layer is from 20 nm to 100 nm.
  • the CH 3 NH 3 PbI 3 light absorbing layer was spin-coated on the obtained active layer by a single spin coating method, and 654 mg of PbI 2 and 217 mg of CH 3 NH 3 I were successively added to DMSO:GBL to obtain PbI 2 and CH 3 NH.
  • a mixed solution of 3 I a mixed solution of PbI 2 and CH 3 NH 3 I was stirred at 80 ° C for two hours to obtain a stirred solution; the stirred solution was allowed to stand at 80 ° C for 1 hour to obtain CH 3 NH 3 .
  • the CH 3 NH 3 PbI 3 solution is added dropwise to the active layer obtained in the step 5, and annealed at 100 ° C for 20 minutes to form the first light absorbing layer 205, and the thickness of the first light absorbing layer 205 is 200 to 300 nm.
  • the HEMT device prepared in step 205' is as shown in FIG.
  • a large amount of electrons are supplied to the channel by CH 3 NH 3 PbI 3 , and a reflection-enhanced HEMT is formed on the lower surface of the substrate to form a reflection-enhanced HEMT, which has high mobility, fast switching speed, enhanced light absorption and light utilization efficiency, and photogeneration.
  • the carrier has increased, the transmission characteristics are enhanced, and the photoelectric conversion efficiency is large.
  • the quality of the light absorbing layer film can be improved by filling the holes and vacancies, thereby generating larger crystal grains and less grain boundaries, and absorbing more. The light produces photogenerated carriers that enhance device performance.
  • FIG. 13 is a schematic cross-sectional view of a P-type bidirectional HHET device based on CH 3 NH 3 PbI 3 material according to an embodiment of the present invention
  • FIG. 14 is a schematic diagram of CH based on an embodiment of the present invention.
  • the P-type bidirectional HHET device may include: an Al 2 O 3 substrate 301, a conductive glass 302, a fourth light absorbing layer 303, a second hole transport layer 304, a source/drain electrode 305, a first hole transport layer 306, and a first The three light absorbing layer 307 and the gate electrode 308.
  • the material of the substrate 301, the conductive glass 302, the fourth light absorbing layer 303, the second hole transport layer 304, the source/drain electrodes 305, the first hole transport layer 306, the first light absorbing layer 307, and the gate electrode 308 are The sequence is vertically distributed from bottom to top to form a multi-layer symmetrical structure to form a bidirectional P-type HHET device.
  • the source/drain electrode 305 may be made of Au material or Al, Ti, Ni, Ag, Pt or the like, wherein Au, Ag, and Pt are chemically stable, and Al, Ti, and Ni are low in cost.
  • the second hole transport layer 304 and the first hole transport layer 306 may be made of a Spiro-OMeTAD material, and the fourth light absorbing layer 303 and the third light absorbing layer 307 may be made of a CH 3 NH 3 PbI 3 material.
  • 308 can be replaced by Al, Ti, Ni, Ag, Pt and other metals, wherein Au, Ag, Pt are chemically stable, and Al, Ti, and Ni are low in cost.
  • FIG. 15a - FIG. 15h and FIG. 16 and FIG. 17, FIG. 15a - FIG. 15h are schematic diagrams showing a preparation method of a P-type bidirectional HHET device based on CH 3 NH 3 PbI 3 material according to an embodiment of the present invention
  • 16 is a schematic structural diagram of a fifth mask provided by an embodiment of the present invention
  • FIG. 6 is a schematic structural diagram of a sixth mask provided by an embodiment of the present invention.
  • the preparation method of the P-type bidirectional HHET device based on CH 3 NH 3 PbI 3 material is described in detail as follows:
  • Step 301 Referring to Fig. 15a, a sapphire Al 2 O 3 substrate 301 having a thickness of 200 ⁇ m to 600 ⁇ m is prepared.
  • the substrate can be replaced by a thermal etching of 1 ⁇ m of SiO 2 on a 200 ⁇ m-600 ⁇ m silicon substrate, but the insulating effect is deteriorated after the replacement, and the manufacturing process is more complicated.
  • Step 302 Referring to FIG. 15b, the FTO conductive glass 302 is prepared on the Al 2 O 3 substrate 301 prepared in step 301 using a sol method. Specifically, the FTO conductive glass 302 may have a thickness of 100 to 300 nm.
  • Step 303 Referring to FIG. 15c, the CH 3 NH 3 PbI 3 material is spin-coated on the FTO conductive glass 302 prepared in Step 302 to form a fourth light absorbing layer 303.
  • the CH 3 NH 3 PbI 3 light absorbing layer 303 was spin-coated on the FTO conductive glass obtained in the step 302 by a single spin coating method, and 654 mg of PbI 2 and 217 mg of CH 3 NH 3 I were successively added to DMSO:GBL to obtain PbI 2 and a mixed solution of CH 3 NH 3 I; a mixed solution of PbI 2 and CH 3 NH 3 I was stirred at 80 ° C for two hours to obtain a stirred solution; and the stirred solution was allowed to stand at 80 ° C for 1 hour to obtain CH.
  • the CH 3 NH 3 PbI 3 solution is added dropwise to the conductive glass obtained in the step 302, and annealed at 100 ° C for 20 minutes to form a fourth light absorbing layer 303, the thickness of the fourth light absorbing layer 303 It is 200 to 300 nm.
  • Step 304 Referring to FIG. 15d, a hole transport layer Spiro-OMeTAD material is spin-coated on the fourth light absorbing layer 303.
  • a solution of Spiro-OMeTAD in chlorobenzene at a concentration of 72.3 mg/mL was prepared, and a solution of 520 mg/mL lithium salt in acetonitrile, tetra-tert-butylpyridine and 300 mg/mL cobalt salt in acetonitrile was added, and the volume ratio of the three was 10:17: 11.
  • Stirring at room temperature for 1 h to obtain a Spiro-OMeTAD solution; dropping the Spiro-OMeTAD solution onto the prepared fourth light absorbing layer 303, followed by spin coating to obtain a second hole transport layer 304 of Spiro-OMeTAD,
  • the second hole transport layer has a thickness of 50 to 200 nm.
  • Step 305 Referring to FIG. 15e and FIG. 16, a source/drain electrode 305 made of a gold material is magnetron-sputtered on the second hole transport layer 304 using a fifth mask.
  • the sputtering target is made of gold with a mass ratio of >99.99%, and Ar with a mass percent purity of 99.999% is used as a sputtering gas to pass into the sputtering chamber.
  • the chamber of the magnetron sputtering device is treated with high purity argon gas. Wash for 5 minutes and then evacuate.
  • the source/drain electrode 305 is prepared under the conditions of a vacuum of 6 ⁇ 10 ⁇ 4 ⁇ 1.3 ⁇ 10 ⁇ 3 Pa, an argon flow rate of 20-30 cm 3 /sec, a target base distance of 10 cm, and an operating power of 20 W-100 W.
  • the source/drain electrode 305 has a thickness of 100 nm to 300 nm.
  • Step 6 Referring to Figure 15f, the Spiro-OMeTAD material is spin coated on the source and drain electrodes 305 and the second hole transport layer 304.
  • a solution of Spiro-OMeTAD in chlorobenzene at a concentration of 72.3 mg/mL was prepared, and a solution of 520 mg/mL lithium salt in acetonitrile, tetra-tert-butylpyridine and 300 mg/mL cobalt salt in acetonitrile was added, and the volume ratio of the three was 10:17: 11.
  • the Spiro-OMeTAD solution is obtained; the Spiro-OMeTAD solution is added dropwise to the prepared second hole transport layer 304 and the source/drain electrode 305, and then spin-coated to obtain the first hole transport.
  • Layer 306, the first hole transport layer has a thickness of 50 to 200 nm.
  • Step 307 Referring to FIG. 15g, a CH 3 NH 3 PbI 3 material is spin-coated on the first hole transport layer 306 to form a third light absorbing layer 307.
  • the first hole transport layer 306 obtained in step 307 is spin-coated with CH 3 NH 3 PbI 3 by a single spin coating method. Specifically, PbI 654mg of CH 2 and 217mg of 3 NH 3 I was added followed by DMSO: GBL give PbI 2 and CH mixed solution of 3 NH 3 I; and the PbI 2 and CH mixed solution of 3 NH 3 I at 80 After stirring for two hours at Celsius, a stirred solution was obtained; the stirred solution was allowed to stand at 80 ° C for 1 hour to obtain a CH 3 NH 3 PbI 3 solution; and the CH 3 NH 3 PbI 3 solution was added dropwise to Spiro obtained in Step 306. On the -OMeTAD hole transport layer, annealing at 100 degrees Celsius for 20 minutes forms a third light absorbing layer 307 having a thickness of 200-300 nm.
  • Step 308 Referring to Figure 15h and Figure 17, the gate electrode 308 of the gold material is magnetron sputtered on the third light absorbing layer 307 using a sixth mask.
  • Magnetron sputtering sputtering is performed on the third light absorbing layer 307 obtained in step 307 by a magnetron sputtering process.
  • the sputtering target is made of gold having a mass ratio of purity >99.99%, and the mass percentage purity is 99.999% of Ar as a splash.
  • the shot gas was passed into the sputtering chamber, and the magnetron sputtering apparatus chamber was cleaned with high purity argon gas for 5 minutes before sputtering, and then evacuated.
  • the gate electrode 308 is prepared under the conditions of a vacuum of 6 ⁇ 10 ⁇ 4 ⁇ 1.3 ⁇ 10 ⁇ 3 Pa, an argon flow rate of 20-30 cm 3 /sec, a target base distance of 10 cm, and an operating power of 20 W-100 W.
  • the gate electrode 308 has a thickness of 100 nm to 300 nm.
  • the upper and lower gate electrodes can be realized.
  • Light can be irradiated to the light absorbing layer to enhance the performance of the device; again, a large number of holes are provided to the channel by CH3NH3PbI3 to form a bidirectional HHET, which has high mobility, fast switching speed, enhanced light absorption, and increased photogenerated carriers. The transmission characteristics are enhanced, and the photoelectric conversion efficiency is large.
  • FIG. 18 is a schematic cross-sectional view of an enhanced heterojunction HHMT based on CH 3 NH 3 PbI 3 material according to an embodiment of the present invention
  • FIG. 19 is a schematic diagram based on an embodiment of the present invention.
  • the enhanced heterojunction HHMT may include an Al 2 O 3 substrate 401, a light reflecting layer 402, a source/drain electrode 403, a first hole transporting layer 404, a third light absorbing layer 405, and a gate electrode 406.
  • the Al 2 O 3 substrate 401, the light reflecting layer 402, the source/drain electrodes 403, the first hole transporting layer 404, the third light absorbing layer 405, and the gate electrode 406 are sequentially formed in a multilayer structure.
  • the reflective layer 402 may be made of a silver material or a metal such as Al or Cu.
  • the source/drain electrode 403 may be made of a gold material or a metal such as Al, Ti, Ni, Ag, or Pt, wherein Au, Ag, and Pt are chemically stable, and Al, Ti, and Ni are low in cost.
  • the first hole transport layer 404 may be a Spiro-OMeTAD material; the third light absorbing layer 405 may be a CH 3 NH 3 PbI 3 /PCBM material; the gate electrode 406 may be a gold material.
  • FIG. 20a - FIG. 20f and FIG. 21 and FIG. 22, FIG. 20a - FIG. 20f are schematic diagrams showing a method for preparing an enhanced heterojunction HHMT based on CH 3 NH 3 PbI 3 material according to an embodiment of the present invention
  • FIG. 21 A schematic structural diagram of a seventh physical mask provided by an embodiment of the present invention
  • FIG. 22 is a schematic structural diagram of an eighth physical mask according to an embodiment of the present invention.
  • the preparation method may include the following steps:
  • Step 401 Referring to Fig. 20a, an Al 2 O 3 substrate 401 having a thickness of 200 ⁇ m to 600 ⁇ m is prepared.
  • Step 402 Referring to FIG. 20b, a silver material is sputter-sputtered on the back side of the Al 2 O 3 substrate 401 to form a light-reflecting layer 402.
  • the silver material is magnetron sputtered on the back surface of the substrate obtained by the magnetron sputtering process in step 401.
  • the sputtering target is made of silver having a mass ratio of >99.99%, and the mass percentage purity of 99.999% is used as the sputtering gas.
  • the cavity, before sputtering, the chamber of the magnetron sputtering apparatus was cleaned with high purity argon gas for 5 minutes, and then evacuated.
  • a reflective silver mirror is prepared under conditions of a vacuum of 6 ⁇ 10 -4 to 1.3 ⁇ 10 -3 Pa, an argon flow rate of 20-30 cm 3 /sec, a target base distance of 10 cm, and a working power of 20 W-100 W.
  • the electrode thickness is from 100 nm to 300 nm.
  • Step 403 Referring to FIG. 20c and FIG. 21, a source/drain electrode 403 is formed by magnetron sputtering a gold material on the Al 2 O 3 substrate 401 using a seventh physical mask.
  • the sputtering target is made of gold with a mass ratio of >99.99%, and Ar with a mass percent purity of 99.999% is used as a sputtering gas to pass into the sputtering chamber.
  • the chamber of the magnetron sputtering device is treated with high purity argon gas. Wash for 5 minutes and then evacuate.
  • the source/drain electrode 403 is prepared under conditions of a vacuum of 6 ⁇ 10 ⁇ 4 to 1.3 ⁇ 10 ⁇ 3 Pa, an argon flow rate of 20-30 cm 3 /sec, a target base distance of 10 cm, and an operating power of 20 W-100 W.
  • the source/drain electrode 403 has a thickness of 100 nm to 300 nm.
  • Step 404 Referring to FIG. 20d, the first hole transport layer 404 is spin-coated on the source-drain electrodes prepared in step 403 and the uncovered Al 2 O 3 substrate 401.
  • a solution of Spiro-OMeTAD in chlorobenzene at a concentration of 72.3 mg/mL was prepared, and a solution of 520 mg/mL lithium salt in acetonitrile, tetra-tert-butylpyridine and 300 mg/mL cobalt salt in acetonitrile was added, and the volume ratio of the three was 10:17: 11.
  • the Spiro-OMeTAD solution is obtained; the Spiro-OMeTAD solution is added dropwise to the prepared substrate and the source and drain electrodes, and then spin-coated to obtain a Spiro-OMeTAD hole transport layer, the first The hole transport layer has a thickness of 50 to 200 nm.
  • Step 405 Referring to FIG. 20e, a third light absorbing layer 405 is prepared on the first hole transport layer 404 by a single spin coating method.
  • Step 406 Referring to FIG. 20f and FIG. 22, a gate electrode 406 is formed by magnetron sputtering a gold material on the third light absorbing layer 405 using an eighth physical mask.
  • the sputtering target is made of gold with a mass ratio >99.99%, and Ar with a mass percentage of purity of 99.999% is used as a sputtering gas to pass into the sputtering chamber.
  • a high purity argon gas is used before sputtering.
  • the cavity of the magnetron sputtering apparatus was cleaned for 5 minutes and then evacuated.
  • the gate electrode 406 is prepared under the condition that the degree of vacuum is 6 ⁇ 10 ⁇ 4 ⁇ 1.3 ⁇ 10 ⁇ 3 Pa, the flow rate of argon gas is 20-30 cm 3 /sec, the target base distance is 10 cm, and the working power is 20 W-100 W.
  • the gate electrode 406 has a thickness of 100 nm to 300 nm.
  • a large amount of holes are provided to the channel by CH 3 NH 3 PbI 3 , and a reflection-enhanced HHMT is formed on the lower surface of the substrate to form a reflection-enhanced HHMT, which has high mobility, fast switching speed, light absorption, and enhanced light utilization efficiency.
  • the photogenerated carriers are increased, the transmission characteristics are enhanced, and the photoelectric conversion efficiency is large.
  • the quality of the light absorbing layer film can be improved by filling the holes and vacancies, thereby generating larger crystal grains and less grain boundaries, and absorbing more. The light produces photogenerated carriers that enhance device performance.
  • Embodiments of the invention by the use of CH 3 NH 3 PbI 3 material structure HEMT / HHMT, as the light-absorbing layer to provide a large number of electrons / holes into the channel of CH 3 NH 3 PbI 3, having a high mobility, fast switching speed
  • the light absorption and light utilization are enhanced, the number of photogenerated carriers is increased, the transmission characteristics are enhanced, and the photoelectric conversion efficiency is large, which greatly improves the performance of the HEMT/HHMT.

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Abstract

一种基于CH 3NH 3PbI 3材料的HEMT/HHMT器件的制备方法。其中该制备包括：选取Al 2O 3衬底（101）；制作源电极和漏电极（105）；在源电极、漏电极（105）及未被源电极和漏电极（105）覆盖的Al 2O 3衬底（101）表面形成第一电子传输层（106）；在第一电子传输层（106）表面制备CH 3NH 3PbI 3材料形成第一光吸收层（107）；在第一光吸收层（107）表面形成栅电极（108）以完成所述HEMT器件的制备。

Description

基于CH3NH3PbI3材料的HEMT/HHMT器件的制备方法 技术领域
本发明属于集成电路技术领域，特别涉及一种基于CH3NH3PbI3材料的HEMT/HHMT器件的制备方法。
背景技术
随着电子技术的蓬勃发展，半导体集成电路对社会发展和国民经济所起的作用越来越大。而其中市场对光电高速器件的需求与日俱增，并对器件的性能不断提出更高更细致的要求。为寻求突破，不管从工艺，材料还是结构等方面的研究一直未有间断。近年来，随着可见光无线通讯技术以及电路耦合技术的崛起，市场对可见光波段的光电高电子迁移率晶体(High Electron Mobility Transistor,简称HEMT)管和光电高空穴迁移率晶体(High Hole Mobility Transistor,简称HHET)管提出了新的要求。
有机/无机钙钛矿(CH3NH3PbI3)的横空出世，又给研究带来了新的视角。有机/无机钙钛矿中的有机基团和无机基团的有序结合，得到了长程有序的晶体结构，并兼具了有机和无机材料的优点。无机组分的高迁移率赋予了杂化钙钛矿良好的电学特性；有机组分的自组装和成膜特性，使得杂化钙钛矿薄膜的制备工艺简单而且低成本，也能够在室温下进行。杂化钙钛矿本身高的光吸收系数也是杂化钙钛矿能够在光电材料中应用的资本。
传统的无机HEMT/HHMT晶体管都是属于电能到电能的转换，并不能满足对可见光波段的光电高电子/空穴迁移率晶体管的需求。因此，如何利用CH3NH3PbI3材料的特性来制备光电HEMT/HHMT器件就变得极其重要。
发明内容
因此，本发明提出一种基于CH3NH3PbI3材料的HEMT器件的制备方法，其可实现大幅提高光电转换效率，增强器件性能。
具体地，本发明实施例提出的一种基于CH3NH3PbI3材料的HEMT器件的制备方法。该方法包括：
步骤1、选取Al2O3衬底；
步骤2、制作源电极和漏电极；
步骤3、在所述源电极、所述漏电极及未被所述源电极和所述漏电极覆盖的所述Al2O3衬底表面形成第一电子传输层；
步骤4、在所述第一电子传输层表面制备CH3NH3PbI3材料形成第一光吸收层；
步骤5、在所述第一光吸收层表面形成栅电极以完成所述HEMT器件的制备。
本发明实施例提出了另一种基于CH3NH3PbI3材料的HHMT器件的制备方法。该方法包括：
步骤a、选取Al2O3衬底；
步骤b、制作源电极和漏电极；
步骤c、在所述源电极、所述漏电极及未被所述源电极和所述漏电极覆盖的所述Al2O3衬底表面形成第一空穴传输层；
步骤d、在所述第一空穴传输层表面制备CH3NH3PbI3材料形成第三光吸收层；
步骤e、在所述第三光吸收层表面形成栅电极以完成所述HEMT器件的制备。
本发明实施例的HEMT/HHMT器件，具备如下优点：
1、由CH3NH3PbI3作为光吸收层向沟道提供大量电子/空穴，具有迁移率高，开关速度快，光吸收以及光利用率增强，光生载流子增多，传输特性增 强，光电转换效率大的优点；
2、通过采用电子传输层传输电子阻挡空穴，能传输更多的电子，增强HEMT器件的性能；
3、通过采用空穴传输层传输空穴阻挡电子，能传输更多的空穴，增强HHMT器件的性能；
4、在光吸收层加入了PCBM材料形成了异质结，能通过对孔洞和空位的填充改善光吸收层薄膜的质量，从而产生更大的晶粒和更少的晶界，吸收更多的光产生光生载流子，增强器件性能。或者，在光吸收层与电子传输层之间加入了PCBM材料，能通过钝化层之间的界面缺陷进而改善光吸收层薄膜的质量，增强器件性能。
上述说明仅是本发明技术方案的概述，为了能够更清楚了解本发明的技术手段，而可依照说明书的内容予以实施，并且为了让本发明的上述和其他目的、特征和优点能够更明显易懂，以下特举较佳实施例，并配合附图,详细说明如下。
附图概述
图1为本发明实施例提供的一种基于CH3NH3PbI3材料的HEMT器件的制备方法示意图；
图2为本发明实施例提供的一种基于CH3NH3PbI3材料的N型双向HEMT器件的截面示意图；
图3为本发明实施例提供的一种基于CH3NH3PbI3材料的N型双向HEMT器件的俯视示意图；
图4a-图4h为本发明实施例提供的一种基于CH3NH3PbI3材料的N型双向HEMT器件的制备方法示意图；
图5为本发明实施例提供的一种第一掩膜版的结构示意图；
图6为本发明实施例提供的一种第二掩膜版的结构示意图；
图7为本发明实施例提供的一种基于CH3NH3PbI3材料的增强型异质结HEMT的截面示意图；
图8为本发明实施例提供的一种基于CH3NH3PbI3材料的增强型异质结HEMT的截面示意图；
图9为本发明实施例提供的另一种基于CH3NH3PbI3材料的增强型异质结HEMT的截面示意图；
图10a-图10f为本发明实施例提供的一种基于CH3NH3PbI3材料的增强型异质结HEMT的制备方法示意图；
图11为本发明实施例提供的一种第三物理掩膜版的结构示意图；
图12为本发明实施例提供的一种第四物理掩膜版的结构示意图；
图13为本发明实施例提供的一种基于CH3NH3PbI3材料的P型双向HHET器件的截面示意图；
图14为本发明实施例提供的一种基于CH3NH3PbI3材料的P型双向HHET器件的俯视示意图；
图15a-图15h为本发明实施例提供的一种基于CH3NH3PbI3材料的P型双向HHET器件的制备方法示意图；
图16为本发明实施例提供的一种第五掩膜版的结构示意图；
图17为本发明实施例提供的一种第六掩膜版的结构示意图；
图18为本发明实施例提供的一种基于CH3NH3PbI3材料的增强型异质结HHMT的截面示意图；
图19为本发明实施例提供的一种基于CH3NH3PbI3材料的增强型异质结HHMT的俯视示意图；
图20a-图20f为本发明实施例提供的一种基于CH3NH3PbI3材料的增强型异质结HHMT的制备方法示意图；
图21为本发明实施例提供的一种第七物理掩膜版的结构示意图；以及
图22为本发明实施例提供的一种第八物理掩膜版的结构示意图。
本发明的较佳实施方式
为更进一步阐述本发明为达成预定发明目的所采取的技术手段及功效,以下结合附图及较佳实施例，对依据本发明提出的基于Ga2O3材料的紫外光电探测器的制备方法其具体实施方式、方法、步骤及功效，详细说明如后。
有关本发明的前述及其他技术内容、特点及功效，在以下配合参考图式的较佳实施例详细说明中将可清楚的呈现。通过具体实施方式的说明，当可对本发明为达成预定目的所采取的技术手段及功效得以更加深入且具体的了解，然而所附图式仅是提供参考与说明之用，并非用来对本发明加以限制。
请参见图1，图1为本发明实施例提供的一种基于CH3NH3PbI3材料的HEMT器件的制备方法示意图。本实施例重点对HMET器件进行描述，该方法可以包括：
步骤1、选取Al2O3衬底；
步骤2、制作源电极和漏电极；
步骤3、在所述源电极、所述漏电极及未被所述源电极和所述漏电极覆盖的所述Al2O3衬底表面形成第一电子传输层；
步骤4、在所述第一电子传输层表面制备CH3NH3PbI3材料形成第一光吸收层；
步骤5、在所述第一光吸收层表面形成栅电极以完成所述HEMT器件的制备。
本发明实施例，采用由CH3NH3PbI3作为光吸收层向沟道提供大量电子/空穴，具有迁移率高，开关速度快，光吸收以及光利用率增强，光生载流子增多，传输特性增强，光电转换效率大的优点。
以下重点对两种结构的HEMT器件进行详细描述。
【实施例一】双向HEMT器件
请参见图2和图3，图2为本发明实施例提供的一种基于CH3NH3PbI3材料的N型双向HEMT器件的截面示意图，图3为本发明实施例提供的一种基于CH3NH3PbI3材料的N型双向HEMT器件的俯视示意图。本实施例，在上述实施例的基础上重点对双向HMET器件进行介绍。
具体地，双向HEMT可以包括：衬底101、导电玻璃102、第二光吸收层103、第二电子传输层104、源漏电极105、第一电子传输层106、第一光吸收层107和栅电极108。该衬底101、导电玻璃102、第二光吸收层103、第二电子传输层104、源漏电极105、第一电子传输层106、第一光吸收层107、栅电极108的材料按顺序由下至上竖直分布，形成多层对称结构，构成双向高电子迁移率晶体管。其中，该衬底101可采用蓝宝石衬底，源漏电极105可采用金材料，第二电子传输层104、第一电子传输层106可采用TiO2材料；第二光吸收层103、第一光吸收层107可采用CH3NH3PbI3材料，导电玻璃102可采用FTO材料，该栅电极108可采用金材料。
请一并参见图4a-图4h及图5和图6，图4a-图4h为本发明实施例提供的一种基于CH3NH3PbI3材料的N型双向HEMT器件的制备方法示意图；图5为本发明实施例提供的一种第一掩膜版的结构示意图；图6为本发明实施例提供的一种第二掩膜版的结构示意图。本实施例的基于CH3NH3PbI3材料的N型双向HEMT器件的制备方法如下：
步骤101：请参见图4a，准备蓝宝石Al2O3衬底101，厚度为200μm-600μm。
衬底选用蓝宝石Al2O3理由：由于其价格低廉，且绝缘性能好，有效的防止双向HEMT高电子迁移率晶体管的纵向漏电。
衬底可选用200μm-600μm硅衬底热氧化1μm的SiO2替代，但替代后绝 缘效果变差，且制作过程更为复杂。
步骤102：请参见图4b，在步骤101所准备的蓝宝石衬底101上使用溶胶法制备导电玻璃FTO102。具体地，该导电玻璃FTO102的厚度可以为100～300nm。
将5～16ml钛酸四丁酯加入到20～75ml二次蒸馏水中，搅拌反应3～5h。将得到的沉淀过滤，反复洗涤后转移至三口烧瓶中，加入100～300ml二次蒸馏水和3ml浓硝酸，于60～90℃搅拌24～48h，即得到透明的FTO溶胶。
步骤103：请参见图4c，在步骤102所制备的导电玻璃FTO 102上旋涂CH3NH3PbI3材料的第二光吸收层103。
采用单一旋涂法在步骤102所得FTO导电玻璃上旋涂CH3NH3PbI3光吸收层103。具体地，将654mg的PbI2和217mg的CH3NH3I先后加入DMSO:GBL中，得到PbI2和CH3NH3I的混合溶液；将PbI2和CH3NH3I的混合溶液在80摄氏度下搅拌两小时，得到搅拌后的溶液；将搅拌后的溶液在80摄氏度静置1小时，得到CH3NH3PbI3溶液；将CH3NH3PbI3溶液滴加到步骤102所得的导电玻璃上，在100摄氏度下退火20分钟，形成CH3NH3PbI3光吸收层，光吸收层厚度为200～300nm。
步骤104：请参见图4d，在第二光吸收层103上采用磁控溅射工艺或者原子层沉积工艺淀积TiO2材料形成第二电子传输层104。
磁控溅射工艺中所用靶材为纯度质量百分比>99.99％的TiO2靶，靶直径为50mm，厚度为1.5-3mm，溅射前，用高纯氩气对磁控溅射设备腔体进行5分钟清洗，然后抽真空，真空度为1.3×10-3-3×10-3Pa，随后依次通入氩气和氧气，通过调节流量控制氩气和氧气的体积比为9:1，总压强保持为2.0Pa，溅射功率为60-80W，生长结束后再经过70℃至150℃的退火处理，由此在光吸收层上制备TiO2电子传输层，传输层厚度为50-200nm。
步骤105：请参见图4e及图5，使用第一掩膜版，在CH3NH3PbI3的第 二光吸收层104上磁控溅射采用金材料制备的源漏电极105。
溅射靶材选用质量比纯度>99.99％的金，以质量百分比纯度为99.999％的Ar作为溅射气体通入溅射腔，溅射前，用高纯氩气对磁控溅射设备腔体进行5分钟清洗，然后抽真空。在真空度为6×10-4-1.3×10-3Pa、氩气流量为20-30cm3/秒、靶材基距为10cm和工作功率为20W-100W的条件下，制备源漏电极金，电极厚度为100nm-300nm。
该源漏电极105可选用Al、Ti、Ni、Ag、Pt等金属替代。其中Au、Ag、Pt化学性质稳定；Al、Ti、Ni成本低。
步骤106：请参见图4f，采用磁控溅射工艺或者原子层沉积工艺淀积TiO2材料的电子传输层106。
以磁控溅射工艺为例：磁控溅射工艺中所用靶材为纯度质量百分比>99.99％的TiO2靶，靶直径为50mm，厚度为1.5～3mm，溅射前，用高纯氩气对磁控溅射设备腔体进行5分钟清洗，然后抽真空，真空度为1.3×10-3～3×10-3Pa，随后依次通入氩气和氧气，通过调节流量控制氩气和氧气的体积比为9:1，总压强保持为2.0Pa，溅射功率为60-80W，生长结束后再经过70℃至150℃的退火处理，由此在衬底和源漏电极上制备TiO2材料的电子传输层，传输层厚度为150-500nm。
步骤107：请参见图4g，在第一电子传输层106上旋涂CH3NH3PbI3材料形成第一光吸收层107。
采用单一旋涂法在步骤107所得的第一电子传输层107上旋涂CH3NH3PbI3光吸收层，将654mg的PbI2和217mg的CH3NH3I先后加入DMSO:GBL中，得到PbI2和CH3NH3I的混合溶液；将PbI2和CH3NH3I的混合溶液在80摄氏度下搅拌两小时，得到搅拌后的溶液；将搅拌后的溶液在80摄氏度静置1小时，得到CH3NH3PbI3溶液；将CH3NH3PbI3溶液滴加到步骤106所得的TiO2薄膜上，在100摄氏度下退火20分钟，形成CH3NH3PbI3 光吸收层，第一光吸收层107的厚度为200-300nm。
步骤108：请参见图4h及图6，使用第二掩膜版，在CH3NH3PbI3光吸收层107上磁控溅射金材料的栅电极108。
采用磁控溅射工艺在步骤107所得光吸收层CH3NH3PbI3上磁控溅射栅电极金材料，溅射靶材选用质量比纯度>99.99％的金，以质量百分比纯度为99.999％的Ar作为溅射气体通入溅射腔，溅射前，用高纯氩气对磁控溅射设备腔体进行5分钟清洗，然后抽真空。在真空度为6×10-4-1.3×10-3Pa、氩气流量为20-30cm3/秒、靶材基距为10cm和工作功率为20W-100W的条件下，制备栅电极金，电极厚度为100nm-300nm。
该栅电极108可选用Al、Ti、Ni、Ag、Pt等金属替代。其中Au、Ag、Pt化学性质稳定；Al、Ti、Ni成本低。
本发明实施例，通过采用对称的光吸收层，能吸收更多的光产生光生载流子，增强器件性能；另外，采用在透明的蓝宝石生长透明的导电玻璃FTO作为底部栅电极，能实现上下光照都能照射到光吸收层，增强器件性能；再次，采用由CH3NH3PbI3向沟道提供大量的电子，形成双向HEMT高电子迁移率晶体管，具有迁移率高，开关速度快，光吸收增强，光生载流子增多，传输特性增强，光电转换效率大的优点。
【实施例二】增强型异质结HEMT
请参见图7、图8及图9，图7为本发明实施例提供的一种基于CH3NH3PbI3材料的增强型异质结HEMT的截面示意图，图8为本发明实施例提供的一种基于CH3NH3PbI3材料的增强型异质结HEMT的截面示意图。该增强型异质结HEMT可以包括：Al2O3衬底201、反光层202、源漏电极203、第一电子传输层204、第一光吸收层205、栅电极206。其中，蓝宝石衬底201、反光层202、源漏电极203、第一电子传输层204、第一光吸收层205、栅电极206依次形成多层结构。
其中，反光层202可以采用银材料，也可以使用Al、Cu等材料替换。源漏电极203可以采用金材料，也可以使用Al、Ti、Ni、Ag、Pt等金属替换，其中，Au、Ag、Pt化学性能稳定，而Al、Ti、Ni成本低。第一电子传输层204可以采用TiO2材料，所述第一光吸收层205可以采用CH3NH3PbI3/PCBM材料，栅电极206可以采用金材料。
可选地，请参见图9，图9为本发明实施例提供的另一种基于CH3NH3PbI3材料的增强型异质结HEMT的截面示意图。该增强型异质结HEMT还可以包括活性层207，该活性层207可以为PCBM材料。此时，第一光吸收层205可以单纯采用CH3NH3PbI3材料。
PCBM材料是一个富勒烯衍生物，分子式是[6,6]-phenyl-C61-butyric acid methyl ester。由于它的较好的溶解性，很高的电子迁移率，与常见的聚合物给体材料形成良好的相分离，已成为有机太阳能电池的电子受体的标准物。本发明利用了这一特性，将其很巧妙的用于图7或者图9所示的HMET器件中，作为缓冲性质的活性层，能通过对孔洞和空位的填充改善光吸收层薄膜的质量，从而产生更大的晶粒和更少的晶界，吸收更多的光产生光生载流子，增强器件性能。
需要说明的是：CH3NH3PbI3材料因在近红外和可见光范围较高的响应度而极适合与在可见光范围的光电探测，其光电灵敏度高，并兼具较高的电子迁移率以及较好的导电性，是制备HEMT的理想材料。
请一并参见图10a-图10f及图11和图12，图10a-图10f为本发明实施例提供的一种基于CH3NH3PbI3材料的增强型异质结HEMT的制备方法示意图，图11为本发明实施例提供的一种第三物理掩膜版的结构示意图，图12为本发明实施例提供的一种第四物理掩膜版的结构示意图。该增强型异质结HEMT的制备方法进行详细说明如下：
步骤201：请参见图10a，准备Al2O3衬底201，厚度为200μm～600μm。
步骤202：请参见图10b，在Al2O3衬底201背面磁控溅射银材料的栅电极形成反光层202。
采用磁控溅射工艺在步骤201所得衬底背面磁控溅射银材料，溅射靶材选用质量比纯度>99.99％的银，以质量百分比纯度为99.999％的Ar作为溅射气体通入溅射腔，溅射前，用高纯氩气对磁控溅射设备腔体进行5分钟清洗，然后抽真空。在真空度为6×10-4～1.3×10-3Pa、氩气流量为20-30cm3/秒、靶材基距为10cm和工作功率为20W-100W的条件下，制备反光层银镜，电极厚度为100nm-300nm。
步骤203：请参见图10c及图11，使用第三物理掩膜版，在Al2O3衬底201上磁控溅射Au材料形成源漏电极203。
溅射靶材选用质量比纯度>99.99％的金，以质量百分比纯度为99.999％的Ar作为溅射气体通入溅射腔，溅射前，用高纯氩气对磁控溅射设备腔体进行5分钟清洗，然后抽真空。在真空度为6×10-4～1.3×10-3Pa、氩气流量为20-30cm3/秒、靶材基距为10cm和工作功率为20W-100W的条件下，制备源漏电极金，电极厚度为100nm～300nm。
步骤204：请参见图10d，在步骤203所制备的源漏电极203以及未被覆盖的衬底上采用磁控溅射工艺或者原子层沉积工艺淀积TiO2材料形成第一电子传输层204。
磁控溅射工艺中所用靶材为纯度质量百分比>99.99％的TiO2靶，靶直径为50mm，厚度为1.5-3mm，溅射前，用高纯氩气对磁控溅射设备腔体进行5分钟清洗，然后抽真空，真空度为1.3×10-3～3×10-3Pa，随后依次通入氩气和氧气，通过调节流量控制氩气和氧气的体积比为9:1，总压强保持为2.0Pa，溅射功率为60-80W，生长结束后再经过70℃至150℃的退火处理，由此在源漏电极以及未被覆盖的衬底上制备第一电子传输层204，第一电子传输层204厚度为50～200nm。
步骤205：请参见图10e，在第一电子传输层204上采用单一旋涂法制备第一光吸收层205。
采用单一旋涂法在步骤204所得的第一电子传输层204上旋涂CH3NH3PbI3材料，将654mg的PbI2和217mg的CH3NH3I先后加入DMSO:GBL中，得到PbI2和CH3NH3I的混合溶液；将PbI2和CH3NH3I的混合溶液在80摄氏度下搅拌两小时，得到搅拌后的溶液；将搅拌后的溶液在80摄氏度静置1小时，得到CH3NH3PbI3溶液；并按照CH3NH3PbI3：PCBM＝100：1的比例溶液滴加到步骤4所得的TiO2薄膜上，在100摄氏度下退火20分钟，形成CH3NH3PbI3/PCBM的第一光吸收层205，第一光吸收层205的厚度为200～300nm。
步骤206：请参见图10f及图12，使用第四物理掩膜版，在第一光吸收层205上磁控溅射栅电极206。
采用磁控溅射工艺在步骤205所得光吸收层上磁控溅射金材料，溅射靶材选用质量比纯度>99.99％的金，以质量百分比纯度为99.999％的Ar作为溅射气体通入溅射腔，溅射前，用高纯氩气对磁控溅射设备腔体进行5分钟清洗，然后抽真空。在真空度为6×10-4-1.3×10-3Pa、氩气流量为20～30cm3/秒、靶材基距为10cm和工作功率为20W-100W的条件下，制备栅电极206，该栅电极206的厚度为100nm～300nm。
可选地，步骤205可以替换为：
步骤205′、在第一电子传输层204上采用旋涂活性层，PCBM材料的质量浓度为8mg/ml，优选为16ml。活性层溶液的溶剂选用氯苯，旋涂在充满惰性气体的手套箱中进行，之后在50℃-200℃下退火10分钟-100分钟。活性层的厚度为20nm-100nm。采用单一旋涂法，在所得活性层上旋涂CH3NH3PbI3光吸收层，将654mg的PbI2和217mg的CH3NH3I先后加入DMSO:GBL中，得到PbI2和CH3NH3I的混合溶液；将PbI2和CH3NH3I的混 合溶液在80摄氏度下搅拌两小时，得到搅拌后的溶液；将搅拌后的溶液在80摄氏度静置1小时，得到CH3NH3PbI3溶液；将CH3NH3PbI3溶液滴加到步骤5所得的活性层上，在100摄氏度下退火20分钟，形成该第一光吸收层205，该第一光吸收层205的厚度为200～300nm。
相应地，步骤205′制备出的HEMT器件如图9所示。
本实施例，采用由CH3NH3PbI3向沟道提供大量的电子，在衬底下表面镀银形成反射增强型HEMT，具有迁移率高，开关速度快，光吸收以及光利用率增强，光生载流子增多，传输特性增强，光电转换效率大的优点。另外，采用在光吸收层加入了PCBM材料形成了异质结，能通过对孔洞和空位的填充改善光吸收层薄膜的质量，从而产生更大的晶粒和更少的晶界，吸收更多的光产生光生载流子，增强器件性能。
以下重点对两种结构的HHMT器件进行详细描述。
【实施例三】双向HHET器件
请参见图13及图14，图13为本发明实施例提供的一种基于CH3NH3PbI3材料的P型双向HHET器件的截面示意图，图14为本发明实施例提供的一种基于CH3NH3PbI3材料的P型双向HHET器件的俯视示意图。该P型双向HHET器件可以包括：Al2O3衬底301、导电玻璃302、第四光吸收层303、第二空穴传输层304、源漏电极305、第一空穴传输层306、第三光吸收层307、栅电极308。该衬底301、导电玻璃302、第四光吸收层303、第二空穴传输层304、源漏电极305、第一空穴传输层306、第一光吸收层307、栅电极308的材料按顺序由下至上竖直分布，形成多层对称结构，构成双向P型HHET器件。
其中，该源漏电极305可采用Au材料，也可以选用Al、Ti、Ni、Ag、Pt等金属替代，其中Au、Ag、Pt化学性质稳定，而Al、Ti、Ni成本低。该 第二空穴传输层304、第一空穴传输层306可采用Spiro-OMeTAD材料，该第四光吸收层303、第三光吸收层307可采用CH3NH3PbI3材料，该栅电极308可选用Al、Ti、Ni、Ag、Pt等金属替代，其中Au、Ag、Pt化学性质稳定，Al、Ti、Ni成本低。
请一并参见图15a-图15h及图16和图17，图15a-图15h为本发明实施例提供的一种基于CH3NH3PbI3材料的P型双向HHET器件的制备方法示意图；图16为本发明实施例提供的一种第五掩膜版的结构示意图；图6为本发明实施例提供的一种第六掩膜版的结构示意图。该基于CH3NH3PbI3材料的P型双向HHET器件的制备方法进行详细说明如下：
步骤301：请参见图15a，准备蓝宝石Al2O3衬底301，厚度为200μm-600μm。
衬底可选用200μm-600μm硅衬底热氧化1μm的SiO2替代，但替代后绝缘效果变差，且制作过程更为复杂。
步骤302：请参见图15b，在步骤301所准备的Al2O3衬底301上使用溶胶法制备FTO导电玻璃302。具体地，该FTO导电玻璃302的厚度可以为100～300nm。
将5～16ml钛酸四丁酯加入到20～75ml二次蒸馏水中，搅拌反应3～5h。将得到的沉淀过滤，反复洗涤后转移至三口烧瓶中，加入100～300ml二次蒸馏水和3ml浓硝酸，于60～90℃搅拌24～48h，即得到透明的FTO溶胶。将该FTO溶胶涂抹在该Al2O3衬底301上静置形成FTO导电玻璃302。
步骤303：请参见图15c，在步骤302所制备的FTO导电玻璃302上旋涂CH3NH3PbI3材料形成第四光吸收层303。
采用单一旋涂法在步骤302所得FTO导电玻璃上旋涂CH3NH3PbI3光吸收层303，将654mg的PbI2和217mg的CH3NH3I先后加入DMSO:GBL中，得到PbI2和CH3NH3I的混合溶液；将PbI2和CH3NH3I的混合溶液在80摄 氏度下搅拌两小时，得到搅拌后的溶液；将搅拌后的溶液在80摄氏度静置1小时，得到CH3NH3PbI3溶液；将CH3NH3PbI3溶液滴加到步骤302所得的导电玻璃上，在100摄氏度下退火20分钟，形成第四光吸收层303，该第四光吸收层303厚度为200～300nm。
步骤304：请参见图15d，在第四光吸收层303上旋涂空穴传输层Spiro-OMeTAD材料。
配制浓度为72.3mg/mL的Spiro-OMeTAD的氯苯溶液，加入520mg/mL锂盐的乙腈溶液、四叔丁基吡啶和300mg/mL钴盐的乙腈溶液，三者体积比为10:17:11，常温搅拌1h，即得到Spiro-OMeTAD溶液；将Spiro-OMeTAD溶液滴加到所准备的第四光吸收层303上，然后进行旋涂，即得到Spiro-OMeTAD第二空穴传输层304，该第二空穴传输层厚度为50-200nm。
步骤305：请参见图15e及图16，使用第五掩膜版，在第二空穴传输层304上磁控溅射采用金材料制备的源漏电极305。
溅射靶材选用质量比纯度>99.99％的金，以质量百分比纯度为99.999％的Ar作为溅射气体通入溅射腔，溅射前，用高纯氩气对磁控溅射设备腔体进行5分钟清洗，然后抽真空。在真空度为6×10-4-1.3×10-3Pa、氩气流量为20-30cm3/秒、靶材基距为10cm和工作功率为20W-100W的条件下，制备源漏电极305，该源漏电极305厚度为100nm-300nm。
步骤6：请参见图15f，在源漏电极305和第二空穴传输层304上旋涂Spiro-OMeTAD材料。
配制浓度为72.3mg/mL的Spiro-OMeTAD的氯苯溶液，加入520mg/mL锂盐的乙腈溶液、四叔丁基吡啶和300mg/mL钴盐的乙腈溶液，三者体积比为10:17:11，常温搅拌1h，即得到Spiro-OMeTAD溶液；将Spiro-OMeTAD溶液滴加到所准备的第二空穴传输层304和源漏电极305上，然后进行旋涂，即得到第一空穴传输层306，该第一空穴传输层的厚度为50～200nm。
步骤307：请参见图15g，在该第一空穴传输层306上旋涂CH3NH3PbI3材料形成第三光吸收层307。
采用单一旋涂法在步骤307所得第一空穴传输层306上旋涂CH3NH3PbI3。具体地，将654mg的PbI2和217mg的CH3NH3I先后加入DMSO:GBL中，得到PbI2和CH3NH3I的混合溶液；将PbI2和CH3NH3I的混合溶液在80摄氏度下搅拌两小时，得到搅拌后的溶液；将搅拌后的溶液在80摄氏度静置1小时，得到CH3NH3PbI3溶液；将CH3NH3PbI3溶液滴加到步骤306所得的Spiro-OMeTAD空穴传输层上，在100摄氏度下退火20分钟，形成第三光吸收层307，该第三光吸收层厚度为200-300nm。
步骤308：请参见图15h及图17，使用第六掩膜版，在第三光吸收层307上磁控溅射金材料的栅电极308。
采用磁控溅射工艺在步骤307所得第三光吸收层307上磁控溅射栅金材料，溅射靶材选用质量比纯度>99.99％的金，以质量百分比纯度为99.999％的Ar作为溅射气体通入溅射腔，溅射前，用高纯氩气对磁控溅射设备腔体进行5分钟清洗，然后抽真空。在真空度为6×10-4-1.3×10-3Pa、氩气流量为20-30cm3/秒、靶材基距为10cm和工作功率为20W-100W的条件下，制备栅电极308，该栅电极308厚度为100nm-300nm。
本发明实施例，通过采用对称的光吸收层，能吸收更多的光产生光生载流子，增强器件性能；另外，采用在透明的蓝宝石生长透明的FTO导电玻璃作为底部栅电极，能实现上下光照都能照射到光吸收层，增强器件性能；再次，采用由CH3NH3PbI3向沟道提供大量的空穴，形成双向HHET，具有迁移率高，开关速度快，光吸收增强，光生载流子增多，传输特性增强，光电转换效率大的优点。
【实施例四】增强型异质结HHMT
请参见图18及图19，图18为本发明实施例提供的一种基于CH3NH3PbI3 材料的增强型异质结HHMT的截面示意图，图19为本发明实施例提供的一种基于CH3NH3PbI3材料的增强型异质结HHMT的俯视示意图。该增强型异质结HHMT可以包括：Al2O3衬底401、反光层402、源漏电极403、第一空穴传输层404、第三光吸收层405、栅电极406。其中，该Al2O3衬底401、反光层402、源漏电极403、第一空穴传输层404、第三光吸收层405、栅电极406依次形成多层结构。
其中，反光层402可以采用银材料，也可以采用Al、Cu等金属替代。源漏电极403可以采用金材料，也可以选用Al、Ti、Ni、Ag、Pt等金属替代，其中Au、Ag、Pt化学性质稳定，而Al、Ti、Ni成本低。第一空穴传输层404可以采用Spiro-OMeTAD材料；所述第三光吸收层405可以采用CH3NH3PbI3/PCBM材料；所述栅电极406可以采用金材料。
请参见图20a-图20f及图21和图22，图20a-图20f为本发明实施例提供的一种基于CH3NH3PbI3材料的增强型异质结HHMT的制备方法示意图，图21为本发明实施例提供的一种第七物理掩膜版的结构示意图，图22为本发明实施例提供的一种第八物理掩膜版的结构示意图。该制备方法可以包括如下步骤：
步骤401：请参见图20a，准备Al2O3衬底401，厚度为200μm～600μm。
步骤402：请参见图20b，在Al2O3衬底401背面磁控溅射银材料形成反光层402。
采用磁控溅射工艺在步骤401所得衬底背面磁控溅射银材料，溅射靶材选用质量比纯度>99.99％的银，以质量百分比纯度为99.999％的Ar作为溅射气体通入溅射腔，溅射前，用高纯氩气对磁控溅射设备腔体进行5分钟清洗，然后抽真空。在真空度为6×10-4～1.3×10-3Pa、氩气流量为20-30cm3/秒、靶材基距为10cm和工作功率为20W-100W的条件下，制备反光层银镜，电极厚度为100nm-300nm。
步骤403：请参见图20c及图21，使用第七物理掩膜版，在Al2O3衬底401上磁控溅射金材料形成源漏电极403。
溅射靶材选用质量比纯度>99.99％的金，以质量百分比纯度为99.999％的Ar作为溅射气体通入溅射腔，溅射前，用高纯氩气对磁控溅射设备腔体进行5分钟清洗，然后抽真空。在真空度为6×10-4～1.3×10-3Pa、氩气流量为20-30cm3/秒、靶材基距为10cm和工作功率为20W-100W的条件下，制备源漏电极403，该源漏电极403的厚度为100nm～300nm。
步骤404：请参见图20d，在步骤403所制备的源漏电极以及未被覆盖的Al2O3衬底401上旋涂第一空穴传输层404。
配制浓度为72.3mg/mL的Spiro-OMeTAD的氯苯溶液，加入520mg/mL锂盐的乙腈溶液、四叔丁基吡啶和300mg/mL钴盐的乙腈溶液，三者体积比为10:17:11，常温搅拌1h，即得到Spiro-OMeTAD溶液；将Spiro-OMeTAD溶液滴加到所准备的衬底和源漏电极上，然后进行旋涂，即得到Spiro-OMeTAD空穴传输层，该第一空穴传输层厚度为50-200nm。
步骤405：请参见图20e，在第一空穴传输层404上材料采用单一旋涂法制备第三光吸收层405。
采用单一旋涂法，将654mg的PbI2和217mg的CH3NH3I先后加入DMSO:GBL中，得到PbI2和CH3NH3I的混合溶液；将PbI2和CH3NH3I的混合溶液在80摄氏度下搅拌两小时，得到搅拌后的溶液；将搅拌后的溶液在80摄氏度静置1小时，得到CH3NH3PbI3溶液；并按照CH3NH3PbI3：PCBM＝100：1的比例溶液滴加到步骤404所得的第一空穴传输层404上，在100摄氏度下退火20分钟，形成CH3NH3PbI3/PCBM光吸收层，该第三光吸收层405厚度为200～300nm。
步骤406：请参见图20f及图22，使用第八物理掩膜版，在该第三光吸收层405上磁控溅射金材料形成栅电极406。
采用磁控溅射工艺，溅射靶材选用质量比纯度>99.99％的金，以质量百分比纯度为99.999％的Ar作为溅射气体通入溅射腔，溅射前，用高纯氩气对磁控溅射设备腔体进行5分钟清洗，然后抽真空。在真空度为6×10-4-1.3×10-3Pa、氩气流量为20～30cm3/秒、靶材基距为10cm和工作功率为20W-100W的条件下，制备栅电极406，该栅电极406的厚度为100nm～300nm。
本实施例，采用由CH3NH3PbI3向沟道提供大量的空穴，在衬底下表面镀银形成反射增强型HHMT，具有迁移率高，开关速度快，光吸收以及光利用率增强，光生载流子增多，传输特性增强，光电转换效率大的优点。另外，采用在光吸收层加入了PCBM材料形成了异质结，能通过对孔洞和空位的填充改善光吸收层薄膜的质量，从而产生更大的晶粒和更少的晶界，吸收更多的光产生光生载流子，增强器件性能。
以上，仅是本发明的较佳实施例而已，并非对本发明作任何形式上的限制，虽然本发明已以较佳实施例揭露如上，然而并非用以限定本发明,任何熟悉本专业的技术人员，在不脱离本发明技术方案范围内，当可利用上述揭示的技术内容作出些许更动或修饰为等同变化的等效实施例，但凡是未脱离本发明技术方案内容，依据本发明的技术实质对以上实施例所作的任何简单修改、等同变化与修饰，均仍属于本发明技术方案的范围内。
工业实用性
本发明实施例通过在HEMT/HHMT的结构中使用CH3NH3PbI3材料，由CH3NH3PbI3作为光吸收层向沟道提供大量电子/空穴，具有迁移率高，开关速度快，光吸收以及光利用率增强，光生载流子增多，传输特性增强，光电转换效率大的优点，极大提升HEMT/HHMT的性能。

Claims (16)

  1. 一种基于CH3NH3PbI3材料的HEMT器件的制备方法，其特征在于，包括：
    步骤1、选取Al2O3衬底；
    步骤2、制作源电极和漏电极；
    步骤3、在所述源电极、所述漏电极及未被所述源电极和所述漏电极覆盖的所述Al2O3衬底表面形成第一电子传输层；
    步骤4、在所述第一电子传输层表面制备CH3NH3PbI3材料形成第一光吸收层；
    步骤5、在所述第一光吸收层表面形成栅电极以完成所述HEMT器件的制备。
  2. 如权利要求1所述的制备方法，其特征在于，在步骤2之前，还包括：
    步骤X1、在所述Al2O3衬底表面形成FTO薄膜；
    步骤X2、在所述FTO薄膜表面制备CH3NH3PbI3材料以形成第二光吸收层；
    步骤X3、在所述第二光吸收层表面形成第二电子传输层。
  3. 如权利要求2所述的制备方法，其特征在于，步骤3包括：
    采用TiO2作为靶材，在氩气和氧气的气氛下，利用磁控溅射工艺，在所述源电极、所述漏电极及未被所述源电极和所述漏电极覆盖的所述第二电子传输层表面淀积TiO2材料以形成所述第一电子传输层。
  4. 如权利要求3所述的制备方法，其特征在于，步骤4包括：
    将PbI2和CH3NH3I先后加入DMSO:GBL中并搅拌，静置后形成CH3NH3PbI3溶液；
    利用单一涂抹法将所述CH3NH3PbI3溶液旋涂在所述第一电子传输层表面并通过退火工艺形成所述第一光吸收层。
  5. 如权利要求1所述的制备方法，其特征在于，在步骤1之后，还包括：
    以Ag材料作为靶材，以Ar作为溅射气体通入溅射腔，在真空度为6×10-4～1.3×10-3Pa，溅射功率为20～100W的条件下，利用磁控溅射工艺，在所述Al2O3衬底下表面溅射Ag材料形成反光层。
  6. 如权利要求5所述的制备方法，其特征在于，步骤2包括：
    采用物理掩膜版，以Au材料作为靶材，以Ar作为溅射气体通入溅射腔，在真空度为6×10-4～1.3×10-3Pa，溅射功率为20～100W的条件下，在所述蓝宝石衬底上表面溅射Au材料形成所述源电极和所述漏电极。
  7. 如权利要求1所述的制备方法，其特征在于，步骤3包括：
    以TiO2材料作为靶材，以Ar和O2作为溅射气体通入溅射腔，在真空度为1.3×10-3～3×10-3Pa，溅射功率为60～80W的条件下，在包括所述源电极和所述漏电极的整个衬底的上表面溅射TiO2材料形成所述第一电子传输层。
  8. 如权利要求1所述的制备方法，其特征在于，步骤4包括：
    利用单一旋涂工艺，在所述电子传输层表面旋涂质量浓度为8mg/ml的PCBM材料，退火处理后形成活性层；
    利用单一旋涂工艺，在所述活性层表面旋涂CH3NH3PbI3材料；
    利用退火工艺，对所述CH3NH3PbI3材料进行退火处理形成所述第一光吸收层。
  9. 一种基于CH3NH3PbI3材料的HHMT器件的制备方法，其特征在于，包括：
    步骤a、选取Al2O3衬底；
    步骤b、制作源电极和漏电极；
    步骤c、在所述源电极、所述漏电极及未被所述源电极和所述漏电极覆盖的所述Al2O3衬底表面形成第一空穴传输层；
    步骤d、在所述第一空穴传输层表面制备CH3NH3PbI3材料形成第三光吸 收层；
    步骤e、在所述第三光吸收层表面形成栅电极以完成所述HEMT器件的制备。
  10. 如权利要求9所述的制备方法，其特征在于，在步骤b之前，还包括：
    步骤Y1、在所述衬底表面形成FTO薄膜；
    步骤Y2、在所述FTO薄膜表面制备CH3NH3PbI3材料以形成第四光吸收层；
    步骤Y3、在所述第四光吸收层表面形成第二空穴传输层。
  11. 如权利要求10所述的制备方法，其特征在于，步骤c包括：
    配制氯苯溶液，并加入锂盐的乙腈溶液、四叔丁基吡啶和钴盐的乙腈溶液，常温搅拌形成Spiro-OMeTAD溶液；
    将所述Spiro-OMeTAD溶液滴加至所述源电极和所述漏电极及未被所述源漏电极覆盖的所述第二空穴传输层表面并旋涂以形成所述第一空穴传输层。
  12. 如权利要求11所述的制备方法，其特征在于，步骤d包括：
    将PbI2和CH3NH3I先后加入DMSO:GBL中并搅拌，静置后形成CH3NH3PbI3溶液；
    利用单一涂抹法将所述CH3NH3PbI3溶液旋涂在所述第一空穴传输层表面并通过退火工艺形成所述第三光吸收层。
  13. 如权利要求9所述的制备方法，其特征在于，在步骤a之后，还包括：
    以Ag材料作为靶材，以Ar作为溅射气体通入溅射腔，在真空度为6×10-4～1.3×10-3Pa，溅射功率为20～100W的条件下，利用磁控溅射工艺，在所述Al2O3衬底下表面溅射Ag材料形成反光层。
  14. 如权利要求13所述的制备方法，其特征在于，步骤b包括：
    采用物理掩膜版，以Au材料作为靶材，以Ar作为溅射气体通入溅射腔， 在真空度为6×10-4～1.3×10-3Pa，溅射功率为20～100W的条件下，在所述Al2O3衬底上表面溅射Au材料形成所述源电极和所述漏电极。
  15. 如权利要求9所述的制备方法，其特征在于，步骤c包括：
    按照一定体积比将锂盐的乙腈溶液、四叔丁基吡啶和钴盐的乙腈溶液加入至Spiro-OMeTAD的氯苯溶液，搅拌后形成Spiro-OMeTAD材料；
    在包括所述源电极和所述漏电极的所述Al2O3衬底的上表面旋涂所述Spiro-OMeTAD材料形成所述第一空穴传输层。
  16. 如权利要求9所述的制备方法，其特征在于，步骤d包括：
    利用单一旋涂工艺，将CH3NH3PbI3与PCBM的混合溶液旋涂在所述第一空穴传输层表面形成CH3NH3PbI3/PCBM材料；
    利用退火工艺，对所述CH3NH3PbI3/PCBM材料进行退火处理形成所述第三光吸收层。
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Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10777638B1 (en) * 2018-01-04 2020-09-15 Synopsys, Inc. Constricted junctionless FinFET/nanowire/nanosheet device having cascode portion
CN117317001A (zh) * 2019-04-12 2023-12-29 广东致能科技有限公司 一种半导体器件及其制造方法
CN118360579B (zh) * 2024-06-20 2024-08-23 安徽纬科材料科技有限公司 基于金属靶材制作钙钛矿薄膜的方法

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105529403A (zh) * 2015-12-08 2016-04-27 电子科技大学 一种修饰钙钛矿太阳能电池吸光层的方法
KR20160095211A (ko) * 2015-01-30 2016-08-11 포항공과대학교 산학협력단 유무기 하이브리드 페로브스카이트 발광 트랜지스터 및 이의 제조방법
WO2016172211A1 (en) * 2015-04-20 2016-10-27 The Regents Of The University Of California Perovskite-based optoelectronic device employing non-doped small molecule hole transport materials
CN106129257A (zh) * 2016-08-30 2016-11-16 北京大学深圳研究生院 一种钙钛矿薄膜光电晶体管及其制备方法
CN106505149A (zh) * 2016-12-08 2017-03-15 西安电子科技大学 基于CH3NH3PbI3/PCBM材料的衬底反光增强型HHMT及其制备方法
CN106654011A (zh) * 2016-12-08 2017-05-10 西安电子科技大学 基于CH3NH3PbI3材料的N型双向HEMT器件及其制备方法
CN106784320A (zh) * 2016-12-08 2017-05-31 西安电子科技大学 基于CH3NH3PbI3材料的衬底反光增强N型异质结HEMT及其制备方法
CN106876489A (zh) * 2017-02-10 2017-06-20 西安电子科技大学 基于CH3NH3PbI3材料的P型双向HHET器件及其制备方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6646293B2 (en) * 2001-07-18 2003-11-11 Motorola, Inc. Structure for fabricating high electron mobility transistors utilizing the formation of complaint substrates
JP4369438B2 (ja) * 2005-04-26 2009-11-18 シャープ株式会社 電界効果型トランジスタ

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160095211A (ko) * 2015-01-30 2016-08-11 포항공과대학교 산학협력단 유무기 하이브리드 페로브스카이트 발광 트랜지스터 및 이의 제조방법
WO2016172211A1 (en) * 2015-04-20 2016-10-27 The Regents Of The University Of California Perovskite-based optoelectronic device employing non-doped small molecule hole transport materials
CN105529403A (zh) * 2015-12-08 2016-04-27 电子科技大学 一种修饰钙钛矿太阳能电池吸光层的方法
CN106129257A (zh) * 2016-08-30 2016-11-16 北京大学深圳研究生院 一种钙钛矿薄膜光电晶体管及其制备方法
CN106505149A (zh) * 2016-12-08 2017-03-15 西安电子科技大学 基于CH3NH3PbI3/PCBM材料的衬底反光增强型HHMT及其制备方法
CN106654011A (zh) * 2016-12-08 2017-05-10 西安电子科技大学 基于CH3NH3PbI3材料的N型双向HEMT器件及其制备方法
CN106784320A (zh) * 2016-12-08 2017-05-31 西安电子科技大学 基于CH3NH3PbI3材料的衬底反光增强N型异质结HEMT及其制备方法
CN106876489A (zh) * 2017-02-10 2017-06-20 西安电子科技大学 基于CH3NH3PbI3材料的P型双向HHET器件及其制备方法

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