CN113238426B - 一种基于量子点非线性的光限幅器件及其非线性薄膜制备方法 - Google Patents

一种基于量子点非线性的光限幅器件及其非线性薄膜制备方法 Download PDF

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CN113238426B
CN113238426B CN202110537572.3A CN202110537572A CN113238426B CN 113238426 B CN113238426 B CN 113238426B CN 202110537572 A CN202110537572 A CN 202110537572A CN 113238426 B CN113238426 B CN 113238426B
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张家雨
陈伟敏
项文斌
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Abstract

本发明公开了一种基于量子点非线性的光限幅器件，该光限幅器件由周期性的高低折射率薄膜交替组成。其中，低折射率膜为利用双源蒸发和热退火技术制备的非线性薄膜；本发明还公开了一种基于量子点非线性的光限幅器件的非线性薄膜制备方法，该方法利用两个蒸发源同时蒸镀非线性材料和常规折射率材料，通过调节两个蒸发源的蒸发速率比，控制两种材料在目标基底上沉积的含量，然后通过退火处理，使非线性材料高温成核为量子点，从而获得量子点嵌入式薄膜。

Description

一种基于量子点非线性的光限幅器件及其非线性薄膜制备 方法
技术领域
本发明涉及光限幅器件技术领域，特别是涉及一种基于量子点非线性的光限幅器件及其非线性薄膜制备方法。
背景技术
光限幅器件是用于光交换的核心器件，在芯片内的信息互连、数据远距离传输、网络之间的光信号交换等领域发挥十分重要的作用。作为光网络中的重要元件，光限幅器件及其集成技术也已成为集成光芯片领域重要的发展方向。具有高速率、高可靠性、高对比度、高集成度的光限幅器件及其集成器件已展现出了巨大的发展潜力和市场应用前景。
半导体量子点是一种半径小于其激子玻尔半径的纳米晶，具有准分立的能级结构，其实质是一种准零维的半导体纳米颗粒。其量子限域效应使得量子点的电子-空穴波函数重叠程度增加，从而导致激子振子强度的增加，进而增强荧光量子产率和三阶非线性极化率。目前量子点已在LED,太阳能电池,生物标记,激光器与传感器中得到广泛应用。量子点的制备方法可以分为物理制备方法和化学制备方法，其中化学制备方法中比较有代表性的是化学气相沉积和胶体法，而胶体量子点合成法是目前最热门的一类，因为这种方法不但操作简单，而且量子点的尺寸和粒径分布都能得到很好地控制。但是该方法适合用于实验室科学研究，对于器件方面，由于溶液中量子点的不稳定性限制了其实际应用，无法进行工业化大规模生产。物理制备方法主要为分子束外延生长MBE，分子束外延的生长速率较慢，大约0.01～1nm/s。可实现单原子(分子)层外延，具有极好的膜厚可控性。但是生长速率比较慢，既是MBE的一个优点，同时也是它的不足，不适于厚膜生长，且设备昂贵精密，成本高，不适于大量成产。
发明内容
有鉴于此，本发明的目的在于提供一种基于量子点非线性的光限幅器件及其非线性薄膜制备方法，用以解决胶体量子点合成法不适合工业大规模生产，且分子束外延技术所有需要的设备昂贵，成本高的技术问题，本发明整个实验流程参数可控，精度较高，有利于推进工业化生产。
为了实现上述目的，本发明提供如下技术方案：
一种基于量子点非线性的光限幅器件，包括：基底，在所述基底上镀制有若干个周期构成的交替层叠薄膜结构，所述每个周期均包括依次交替的低折射率薄膜和高折射率薄膜，并且靠近所述基底一侧的为低折射率薄膜，其中，所述低折射率膜为通过同时对非线性材料和常规折射率材料进行双源蒸发处理，然后再经过退火处理之后得到的量子点嵌入的非线性薄膜；所述常规折射率材料为在可见光区域中的折射率1.3～1.5的低折射率材料；
所述高折射率薄膜为通过选择TiO2、SnO2、In2O3及其复合物进行单源蒸发处理到的线性薄膜；所述交替层叠薄膜结构的周期数为2～8。
进一步的，所述基底为石英、玻璃或者硅基片。
进一步的，所述常规折射率材料为SiO2或者MgF2；
进一步的，所述非线性材料为GeSe、CdSe、CdS、CdTe、PbSe、PbS、ZnS、ZnTe以及上述材料中任意两种或者多种的复合材料。
进一步的，所述高折射率薄膜为采用电子束蒸发法制备获得。
一种基于量子点非线性的光限幅器件的非线性薄膜制备方法，包括如下步骤：
步骤S1、将清洗好的基底放置于真空镀膜机腔内，采用双源蒸发处理的方式，将非线性材料放置在阻蒸坩埚中，同时将常规折射率材料放置在电子束蒸发源坩埚中；
步骤S2、将镀膜机腔体抽真空至1×10-3Pa；
步骤S3、通过调节电子束蒸发电压至7800V～8200V，使得常规折射率材料沉积速率达到1.3A/s～1.7A/s，通过调节阻蒸电流至9A～11A，使得非线性材料沉积速率达到0.4A/s～0.5A/s；
步骤S4、蒸镀完毕后，利用管式炉加保护气体的方式对薄膜基底进行退火处理，使得非线性材料高温成核为量子点，即可获得量子点嵌入的非线性薄膜。
进一步的，在所述步骤S3中，通过调节电子束蒸发电压至8000V，使得常规折射率材料沉积速率达到1.5A/s，通过调节阻蒸电流至10A，使得非线性材料沉积达到0.5A/s。
进一步的，在所述步骤S4中，退火温度为300～700K，退火时间为30～120min，所述保护气体为氮气。
本发明的有益效果是：
1、本发明方法所制备的量子点嵌入式薄膜可根据实际应用需求制备多层膜结构，并进行工业化生产。由于非线性光学材料的折射率会随场强变化，包含有量子点材料的多层膜光学响应也随场强的变化而变化。并且由于布拉格谐振，入射激光的电场振幅在两种交替层中变得不均匀，并且在SiO2:QDs层中的电场强度远超过空间平均场强。这将大大地增强激发场和量子点之间的非线性作用。
2、本发明提供的光限幅器件，在弱光条件下的线性折射率到强光条件下的非线性折射率的巨大改变，实现明显增强的非线性响应，引起禁带边的移动，此时一大部分光将被反射无法透过多层膜，从而实现光限幅器件。
附图说明
图1为实施例1中提供的基于量子点非线性的光限幅器件结构示意图。
图2为实施例2中提供的基于量子点嵌入的非线性薄膜的结构示意图。
具体实施方式
为使本发明实施例的目的、技术方案和优点更加清楚，下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
实施例1
参见图1，本实施例提供一种基于量子点非线性的光限幅器件，包括：基底，在基底上镀制有若干个周期构成的交替层叠薄膜结构，每个周期均包括依次交替的低折射率薄膜和高折射率薄膜，并且靠近基底一侧的为低折射率薄膜，其中，低折射率膜为通过同时对非线性材料和常规折射率材料进行双源蒸发处理，然后再经过退火处理之后得到的量子点嵌入的非线性薄膜；常规折射率材料为在可见光区域中的折射率1.3～1.5的低折射率材料；
高折射率薄膜为通过选择TiO2、SnO2、In2O3及其复合物进行单源蒸发处理到的线性薄膜；交替层叠薄膜结构的周期数为2～8。
具体的说，在本实施例中，基底可以为石英、玻璃或者硅基片。
具体的说，在本实施例中，常规折射率材料可以为SiO2或者MgF2。
具体的说，在本实施例中，非线性材料为GeSe、CdSe、CdS、CdTe、PbSe、PbS、ZnS、ZnTe以及上述材料中任意两种或者多种的复合材料。
具体的说，在本实施例中，高折射率薄膜为采用电子束蒸发法对TiO2、SnO2、In2O3及其复合物进行单源蒸发处理到线性薄膜。
实施例2
参见图2，本实施例在实施例1的基础上，提供实施例1中量子点嵌入的非线性薄膜的制备方案，包括如下步骤：
步骤S1、将清洗好的基底放置于真空镀膜机腔内，采用双源蒸发处理的方式，将非线性材料放置在阻蒸坩埚中，同时将常规折射率材料放置在电子束蒸发源坩埚中；
步骤S2、将镀膜机腔体抽真空至1×10-3Pa；
步骤S3、通过调节电子束蒸发电压至7800V～8200V，使得常规折射率材料沉积速率达到1.3A/s～1.7A/s，通过调节阻蒸电流至9A～11A，使得非线性材料沉积速率达到0.4A/s～0.5A/s；
步骤S4、蒸镀完毕后，利用管式炉加保护气体的方式对薄膜基底进行退火处理，使得非线性材料高温成核为量子点，即可获得量子点嵌入的非线性薄膜。
具体的说，在本实施例中，在步骤S4中，退火温度为300～700K，退火时间为30～120min，保护气体为氮气。
具体的说，在本实施例中，通过调节电子束蒸发电压至8000V，使得常规折射率材料沉积速率达到1.5A/s，通过调节阻蒸电流至10A，使得非线性材料沉积达到0.5A/s
具体的说，在本实施例中，薄膜以约2A/s的速度在基底上沉积。
本发明未详述之处，均为本领域技术人员的公知技术。
以上详细描述了本发明的较佳具体实施例。应当理解，本领域的普通技术人员无需创造性劳动就可以根据本发明的构思作出诸多修改和变化。因此，凡本技术领域中技术人员依本发明的构思在现有技术的基础上通过逻辑分析、推理或者有限的实验可以得到的技术方案，皆应在由权利要求书所确定的保护范围内。

Claims (6)

1.一种基于量子点非线性的光限幅器件，其特征在于，包括：基底，在所述基底上镀制有若干个周期构成的交替层叠薄膜结构，每个周期均包括依次交替的低折射率薄膜和高折射率薄膜，并且靠近所述基底一侧的为低折射率薄膜，其中，所述低折射率薄膜为通过同时对非线性材料和常规折射率材料进行双源蒸发处理，然后再经过退火处理之后得到的量子点嵌入的非线性薄膜；所述常规折射率材料为在可见光区域中的折射率1.3～1.5的低折射率材料；
所述高折射率薄膜为通过选择TiO2、SnO2、In2O3及其复合物进行单源蒸发处理得到的线性薄膜；所述交替层叠薄膜结构的周期数为2～8；
所述常规折射率材料为SiO2或者MgF2；
所述非线性材料为GeSe、CdSe、CdS、CdTe、PbSe、PbS、ZnS、ZnTe以及上述材料中任意两种或者多种的复合材料。
2.根据权利要求1所述的一种基于量子点非线性的光限幅器件，其特征在于，所述基底为石英、玻璃或者硅基片。
3.根据权利要求1所述的一种基于量子点非线性的光限幅器件，其特征在于，所述高折射率薄膜为采用电子束蒸发法制备获得。
4.根据权利要求1-3中任一权利要求所述的一种基于量子点非线性的光限幅器件的非线性薄膜制备方法，其特征在于，包括如下步骤：
步骤S1、将清洗好的基底放置于真空镀膜机腔内，采用双源蒸发处理的方式，将非线性材料放置在阻蒸坩埚中，同时将常规折射率材料放置在电子束蒸发源坩埚中；
步骤S2、将镀膜机腔体抽真空至1×10-3Pa；
步骤S3、通过调节电子束蒸发电压至7800V～8200V，使得常规折射率材料沉积速率达到1.3A/s～1.7A/s，通过调节阻蒸电流至9A～11A，使得非线性材料沉积速率达到0.4A/s～0.5A/s；
步骤S4、蒸镀完毕后，利用管式炉加保护气体的方式对薄膜基底进行退火处理，使得非线性材料高温成核为量子点，即可获得量子点嵌入的非线性薄膜。
5.根据权利要求4所述的一种基于量子点非线性的光限幅器件的非线性薄膜制备方法，其特征在于，在所述步骤S3中，通过调节电子束蒸发电压至8000V，使得常规折射率材料沉积速率达到1.5A/s，通过调节阻蒸电流至10A，使得非线性材料沉积速率达到0.5A/s。
6.根据权利要求5所述的一种基于量子点非线性的光限幅器件的非线性薄膜制备方法，其特征在于，在所述步骤S4中，退火温度为300～700K，退火时间为30～120min，所述保护气体为氮气。
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