WO2017178467A1 - Composant électroluminescent - Google Patents

Composant électroluminescent Download PDF

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Publication number
WO2017178467A1
WO2017178467A1 PCT/EP2017/058640 EP2017058640W WO2017178467A1 WO 2017178467 A1 WO2017178467 A1 WO 2017178467A1 EP 2017058640 W EP2017058640 W EP 2017058640W WO 2017178467 A1 WO2017178467 A1 WO 2017178467A1
Authority
WO
WIPO (PCT)
Prior art keywords
light
carrier
layer
component according
component
Prior art date
Application number
PCT/EP2017/058640
Other languages
German (de)
English (en)
Inventor
David Racz
Ulrich Streppel
Original Assignee
Osram Opto Semiconductors Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors Gmbh filed Critical Osram Opto Semiconductors Gmbh
Publication of WO2017178467A1 publication Critical patent/WO2017178467A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements

Definitions

  • the invention relates to a light-emitting element ge ⁇ Frankfurtss claim. 1
  • the object of the invention is to provide an improved light emitting device.
  • a light-emitting component with a carrier wherein a light-emitting semiconductor chip is arranged on the carrier. Opposite the semi-conductor chip ⁇ , the support has a reflective layer that is re-directed light emitted by the semiconductor chip light incident via the carrier to the reflecting layer, at least partially stabilized back into the carrier. Furthermore, a conversion layer is provided at least at a partial area of the side surface of the carrier. The conversion layer is formed to the laterally emitted light from the semiconductor chip at least partially ben in the wavelength to various ⁇ . Thus, a desired color mixture, in particular a white light can be generated. With the help of the proposed ⁇ nen component a low height is achieved, wherein In addition, a good lateral radiation of the light is possible.
  • the reflective layer is formed as a mirror layer.
  • the radiation is understood to mean a side surface of the component.
  • the mirror layer has the advantage that the layer thickness is very thin.
  • a particularly low overall height of the component is made ⁇ light.
  • the overall height of the component may be in the range of less than 10 mm, in particular in the range of 2 mm and smaller.
  • the reflective layer is formed as a light-scattering layer.
  • the light-scattering layer builds slightly higher than the mirror ⁇ layer, but has the advantage that a diffuse light scattering and reflection of the light back into the carrier takes place.
  • the mirror layer and / or the light-scattering layer can extend into the lateral region of the conversion layer and can also be formed on the conversion layer.
  • the semiconductor chip is formed, for example, in the form of epitaxially grown semiconductor layers. Especially for example, the semiconductor layers may be grown on the carrier.
  • the conversion layer surrounds the carrier on the entire side surface.
  • the conversion layer can at least partially or completely limit not only the side surface of the carrier, but also the side surface of the semiconductor chip. In this way, a homogeneous light is radiated from the component over the entire side surface.
  • Konversi ⁇ onstik also on the side of the semiconductor chip, a further improvement in the homogeneity of the emitted light is achieved, since also the laterally emitted from the semiconductor chip light is emitted through the conversion layer.
  • the carrier is formed with a rectangular contour.
  • the conversion layer in the proposed embodiment has an at least partially rounded outer contour. Thus, a more uniform light emission can be achieved.
  • the conversion layer surrounds the carrier completely and has a rounded rectangular outer contour or a polynomial rounded outer contour or an elliptical outer contour.
  • the shape of the outer contour may be formed in a manner to achieve a desired color mixing of the emitted light in mallli ⁇ cher direction.
  • the shape of the outer contour can be used to produce regardless of the direction of the light emission of an approximately equal wavelength of the light, ie light of the same color.
  • the component has a rectangular area, that is to say a rectangular outer contour.
  • the conversion layer completely surrounds the carrier in the lateral direction and has four rounded bulges. From ⁇ pending chosen from the embodiment, it may be advantageous to arrange the protrusions in each case centrally in relation to a Be ⁇ ten realization of the rectangular carrier. In a In another embodiment, it may be advantageous to arrange the rounded bulges respectively centrally with respect to a corner of the carrier.
  • a side surface of the component is assigned a light guide, wherein light is coupled into the light guide via the Be ⁇ ten Chemistry of the device. In this way, an improved guidance of the light in a desired direction can be achieved with the aid of the light guide.
  • the light guide is designed as a housing, wherein the component is at least partially disposed in a recess of the housing.
  • the housing can protect in the form of the light guide the Bauele ⁇ ment to damage.
  • a desired light pipe in particular a light pipe in the lateral radiation direction, can be achieved.
  • the light guide has scattering structures on a first side.
  • the scattering structures can be arranged in a uniform grid with a predetermined distance from each other.
  • the scattering structures may have the same size areas.
  • a homogeneous radiation of the light in the area of the scattering structures can be achieved.
  • Another IMPROVE ⁇ tion of the scattering structures can be achieved by the diffusing structures comprise a light diffusing material.
  • the light-scattering material may be formed, for example, in the form of a color. For example, a white color can be used that reflects 70% of the light and 30% lets through the light.
  • the scattering structure may comprise, for example, titanium oxide.
  • the recess counter to the component lying on a bottom surface, said bottom surface having a light-scattering ⁇ end or a light reflective layer at least in a partial area.
  • a further improvement of the side exhaust radiation of light can be achieved.
  • This embodiment is particularly advantageous when the device has no reflective layer, but a scattering layer or no scattering or reflective layer opposite to the semi ⁇ conductor chip.
  • the housing may have a light reflecting layer at least on a second side, which is opposite to a first side.
  • the light-reflecting layer is in particular ⁇ sondere disposed opposite to the side having the scattering structures.
  • FIG. 1 shows a schematic cross section through an embodiment of the component
  • FIG. 2 shows a schematic view of an embodiment of the component with an angular support and with a conversion layer with a round outer contour
  • FIG. 3 shows a schematic plan view of a component with an angular support with a conversion layer with an angular outer contour
  • Figure 4 is a schematic plan view of a further exporting ⁇ approximate shape of a component with a conversion layer having a rounded rectangular outer contour
  • FIG. 5 shows a schematic plan view of a further embodiment of the component with a conversion layer with a rounded free form as the outer contour
  • Figure 6 is a plan view of a further embodiment ei ⁇ nes component with a conversion layer having a rank ⁇ rounded asymmetrical outer contour
  • Figure 7 is a schematic plan view of a further exporting ⁇ approximate shape of a component with a conversion layer having an elliptical outer contour
  • FIG. 8 shows a schematic cross section through a further embodiment of the component, which is arranged in a housing ⁇ , and
  • FIG. 9 shows a schematic cross section through FIG. 8 perpendicular to the cross section of FIG. 9.
  • FIG. 1 shows, in a schematic cross section, a component 1 which has a carrier 2.
  • a semiconductor chip 3 On a lower side of the carrier 2, a semiconductor chip 3 is arranged.
  • the half ⁇ semiconductor chip 3 has a layered structure including semiconductor layers comprising an active region for generating electromagnetic radiation ⁇ shear.
  • electrical connections 4, 5 for operating the semiconductor chip 3 are provided on the underside of the semiconductor chip.
  • the electrical connections 4, 5 are, for example, designed in the form of soldering pads and connected in an electrically conductive manner to a p-side or to an n-side of the layer structure.
  • the semiconductor chip 3 may be formed in the form of epitaxially grown on the support semiconductor layers with an active zone for generating electromagnetic radiation.
  • the semiconductor chip may be formed as a sapphire flip-chip. Of the Semiconductor chip 3 may also have other forms of training.
  • the carrier 2 Opposite to the semiconductor chip 3, the carrier 2 has a reflective layer 6 on an upper side.
  • the re ⁇ inflectional layer 6 is formed to light incident from the semiconductor chip 3 by the support 2 to the reflective layer 6, at least partially to steer back to the carrier. 3 Under light becomes electromagnetic
  • the reflective layer 6 may be formed, for example, as a mirror layer or as a scattering layer.
  • the mirror layer can be formed, for example, of silver or aluminum or in the form of dielectric layers.
  • the reflective layer 6 may be formed as a scattering layer as a white light-scattering layer.
  • the diffusing layer 6 may, for example, a Sumateri ⁇ al eg silicone and scattering particles have, for example of titanium oxide and / or barium sulfate.
  • the carrier 2 is formed of a material that substantially transmits light, which is generated by the semiconductor chip 3, and absorbs it only to a small extent.
  • the carrier 2 can be made of sapphire. However, other materials such. As glass can be used.
  • the Trä ⁇ ger 2 is covered at side surfaces 7,8 with a conversion material 9.
  • the conversion material 9 can luminescent Ma ⁇ materials such. B. phosphor, the light emitted from the semiconductor chip 3 light at least partially in the
  • the Konversionsma ⁇ TERIAL 9 can be used to produce a light having a desired wavelength and a desired wavelength range.
  • the reflective layer 6 is disposed in the illustrated example exporting ⁇ approximately on an upper side of Konversionsmateri ⁇ as. 9
  • the reflective layer 6 may be arranged only on the carrier 2.
  • the conversion material 9 can cover all Be ⁇ ten vom the wearer second
  • the conversion material 9 may additionally, as shown also cover the entire soflä ⁇ surfaces of the semiconductor chip.
  • the formation of the reflective layer 6 as a mirror layer can be done by depositing metal or dielectric materials, for example by means of a sputtering method.
  • the conversion material 9 can be formed laterally on the carrier 2 and the semiconductor chip 3, for example with the aid of a mold process. In addition, for the formation of the conversion material 9 and mold method can be used.
  • the formation of the reflective layer 6 as the diffusion layer can be carried out, for example, by means of a molding process.
  • a plurality of components with the carrier and the semiconductor chip may be disposed, which are subsequently converted with conversion material 9 ⁇ ben. Thereafter, the reflective layer is placed ⁇ on the plurality of carriers, and the conversion material. 6 Subsequently, the components are separated for example by means of sawing process or by means of Laserschnei ⁇ de-method.
  • the reflective layer 6 may have a thickness in the range of 50 ym to 500 ym, depending on the chosen embodiment.
  • the carrier 2 with the semiconductor chip 3 may have a thickness in the range of 100 ym to 1000 ym, depending on the selected embodiment.
  • Figure 2 shows a schematic cross section through an embodiment of the device 1, which is constructed substantially in accordance with FIG.
  • the carrier 2 is rectangular in shape and the conversion material 9 has circular Au .kontur on.
  • the semiconductor chip 3 may cover the entire underside of the carrier 2 or only part of the underside of the carrier 2.
  • the reflective layer 6 preferably covers an entire top side of the carrier 2 and an entire top side of the conversion material 9 and thus has the outer contour of a circular disk in the exemplary embodiment shown.
  • Figure 3 shows a further embodiment of a device 1 in cross-section, substantially in accordance with FIG. Ausgebil ⁇ det 1.
  • the carrier 2 is rectangular in shape, wherein the conversion material 9 has a rectangular outer contour.
  • the reflective layer 6, which is not shown, has a rectangular, in particular square shape.
  • Figures 2 and 3 each show a component which is constructed substantially in accordance with Figure 1, but with the outer contours of the conversion material 9 differ.
  • Figure 4 shows a schematic cross section through a further embodiment of the device 1, which is constructed substantially in accordance with Figure 1, wherein the carrier 2 has a quadra ⁇ table shape.
  • the conversion material 9 has a rounded outer contour 10.
  • the outer contour 10 has a first distance A in the region of the side surfaces 7, 8, 11, 12.
  • Figure 5 shows a further embodiment of a device 1 with a schematic cross-section, wherein the device 1 is constructed substantially in accordance with Figure 1, except that the conversion material 9 has an outer contour 10 having a SYMMETRI ⁇ rule polynomial free-form.
  • the outer contour has 10 rounded bulges 14, 15, 16, 17, the center region in each case in a middle a side surface 7, 8, 11, 12 of the carrier 2 are arranged.
  • the bulges have a convex outer contour in cross section.
  • the bulges 14, 15, 16 each have a first distance A, which is the same for all bulges.
  • the outer contour 10 in the region of the corners 13 of the carrier 2 to a second distance B, which is in the range between 0.2 and 0.8 times the first distance A.
  • FIG. 6 shows a diagrammatic cross section through a further embodiment of the component 1, the component being constructed substantially in accordance with FIG. 1, wherein, however, the conversion material 9 has an outer contour 10 which has a non-symmetrical polynomial freeform.
  • the second spacing B in the areas of the corners 13 of the carrier 2 are formed to be larger than the first distances A to Be ⁇ area of the side surfaces 7, 8, 11, 12 of the carrier. 2
  • FIG. 7 shows a further embodiment of the component 1 in a schematic cross section.
  • the component 1 is constructed essentially according to FIG. 1, but the conversion material 9 has an outer contour 10 which has an elliptical shape.
  • Figure 8 shows a further embodiment of the device 1 in cross-section, the device 1 is constructed substantially in accordance with Figure 1 and is arranged in a recess 18 of a GePFu ⁇ ses 19th In this case, the recess 18 has a Bo ⁇ den configuration 20, which faces the reflective layer 6 of the component 1. Between the reflective layer 6 of the device 1 and the bottom surface 20, a free space 25 is formed.
  • a second stray or spat ⁇ terrain layer may be provided 21st
  • the housing 19 receives the device 1 at least partially.
  • the housing 19 is we ⁇ anteas partially of a light-conducting material gebil ⁇ det, which leads the light of the semiconductor chip 3 and is transparent to the light.
  • the housing 19 is a light guide.
  • a reflector layer 22 may be formed on a bottom of the housing 19.
  • the reflector layer 22 can cover the entire housing surface.
  • the re ⁇ flektor für 22 also covers the region of the recess 18th
  • the reflector layer 22 serves to reflect light which falls from the housing 19 or from the component 1 onto the reflector layer 22, back to ⁇ .
  • the reflector layer may be formed, for example, as a mirror layer or as a scattering layer.
  • the housing 19 may have scattering structures 24 on an upper side 23.
  • the scattering structures 24 serve to better decouple light from the housing 19.
  • the scattering structures 24 may have a round or angular surface in the plane of the upper side 23 of the housing 19.
  • the scattering structures 24 may be in the form of a coating or in the form of a mechanical structure of the upper side 23 of the housing 19.
  • the Streustruktu ⁇ ren 24 may be arranged a fixed grid at fixed intervals.
  • the housing 19 may be made of a light-conducting material such. As PMMA or polycarbonate Herge ⁇ provides.
  • the housing 19 may have a thickness in a Y direction perpendicular to the plane of the carrier 2 in the range of 1500 to 3000 microns.
  • FIG. 9 shows a schematic cross section through FIG. 8 in the plane of the carrier 8, wherein a part of the scattering structures 24 is shown in dashed lines. In this view, the regular arrangement of the scattering structures 24 can be detected in a grid with equal intervals. In addition, the scattering structures 24 are identical in the example chosen.
  • the scattering structures 24 are formed in the form of circular surfaces. However, any other type of surface can be used. In addition, Kings ⁇ NEN the scattering structures 24 in an irregular grid, that is, be located at different distances.
  • the scattering structures 24 may be made of silicon, for example. kon with titanium oxide on the top 23 of the housing 19 is ⁇ forms.
  • the scattering structures can be formed from highly reflective, diffuse scattering material. Thus, an off ⁇ coupling is avoided over the top of the housing 19 and the light emitted substantially over side surfaces of the housing 19. As a result, a desired lateral radiation of the light from the housing 19 is achieved. Use of the scattering structure, a desired radiation over the upper side 23 or on other side faces 26,27,28,29 of the Gezzau ⁇ ses 19 can be achieved.
  • the housing 19 may also have other shapes.
  • each semiconductor device may be formed separately ansteu ⁇ Erbar and dimmable.
  • a homogeneous ⁇ re image illumination with improved contrast and black levels can be achieved.

Abstract

La présente invention concerne un composant électroluminescent (1) doté d'un support (2) sur une première face duquel est disposée une puce semi-conductrice (3) électroluminescente, le support étant translucide, sur une seconde face duquel, qui est disposée à l'opposé de la première face, est placée une couche réfléchissante (6), la couche réfléchissante (6) renvoyant la lumière émise par la puce semi-conductrice (3) au moins en partie dans le support (2). Au moins une partie d'une surface latérale du support, qui est disposée entre la première et la seconde face, est une couche de conversion (9).
PCT/EP2017/058640 2016-04-13 2017-04-11 Composant électroluminescent WO2017178467A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102016106851.9 2016-04-13
DE102016106851.9A DE102016106851A1 (de) 2016-04-13 2016-04-13 Lichtemittierendes Bauelement

Publications (1)

Publication Number Publication Date
WO2017178467A1 true WO2017178467A1 (fr) 2017-10-19

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PCT/EP2017/058640 WO2017178467A1 (fr) 2016-04-13 2017-04-11 Composant électroluminescent

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WO (1) WO2017178467A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102021131390A1 (de) 2021-11-30 2023-06-01 Ambright GmbH Leuchtvorrichtung

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070284600A1 (en) * 2006-06-09 2007-12-13 Philips Lumileds Lighting Company, Llc Low Profile Side Emitting LED
WO2015011590A1 (fr) * 2013-07-22 2015-01-29 Koninklijke Philips N.V. Diode électroluminescente à puce retournée à émission latérale

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Publication number Priority date Publication date Assignee Title
US5557115A (en) * 1994-08-11 1996-09-17 Rohm Co. Ltd. Light emitting semiconductor device with sub-mount
US5813753A (en) * 1997-05-27 1998-09-29 Philips Electronics North America Corporation UV/blue led-phosphor device with efficient conversion of UV/blues light to visible light
US7293908B2 (en) * 2005-10-18 2007-11-13 Goldeneye, Inc. Side emitting illumination systems incorporating light emitting diodes
US8247831B2 (en) * 2007-11-20 2012-08-21 Koninklijke Philipe Electronics N.V. Side emitting device with wavelength conversion
DE102012102114B4 (de) * 2012-03-13 2021-09-16 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlungsemittierendes Halbleiterbauteil, Beleuchtungsvorrichtung und Anzeigevorrichtung
DE102013110114A1 (de) * 2013-09-13 2015-04-02 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070284600A1 (en) * 2006-06-09 2007-12-13 Philips Lumileds Lighting Company, Llc Low Profile Side Emitting LED
WO2015011590A1 (fr) * 2013-07-22 2015-01-29 Koninklijke Philips N.V. Diode électroluminescente à puce retournée à émission latérale

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