WO2017177779A1 - 一种大面积电极led阵列制备方法 - Google Patents

一种大面积电极led阵列制备方法 Download PDF

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WO2017177779A1
WO2017177779A1 PCT/CN2017/076030 CN2017076030W WO2017177779A1 WO 2017177779 A1 WO2017177779 A1 WO 2017177779A1 CN 2017076030 W CN2017076030 W CN 2017076030W WO 2017177779 A1 WO2017177779 A1 WO 2017177779A1
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led
array
substrate
area
electrode
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French (fr)
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刘召军
彭灯
张珂
莫炜静
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Sun Yat Sen University
SYSU CMU Shunde International Joint Research Institute
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Sun Yat Sen University
SYSU CMU Shunde International Joint Research Institute
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/858—Means for heat extraction or cooling
    • H10H20/8585—Means for heat extraction or cooling being an interconnection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0364—Manufacture or treatment of packages of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0365—Manufacture or treatment of packages of means for heat extraction or cooling

Definitions

  • the invention relates to the field of LED array display preparation, and more particularly to a method for preparing a large area electrode LED array.
  • LED display screen as a new medium, sports glowing text, is more attractive to attract attention, large amount of information, updated at any time, has very good advertising and notice effects.
  • LED screens are simpler than neon lights, easy to install and use, more effects change, and can update content at any time. It is a good indoor and outdoor visual media.
  • LED screens are high-tech electronic products, which are relatively expensive and have been used in government and units. Technology continues to advance, prices continue to decrease, and assembly and maintenance are simpler.
  • the small LED strip screen because of its low price, simple installation and use, is slowly accepted by the public, gradually enters large and small stores, and the application is more popular, and gradually becomes popular.
  • the LED display screen the basic components mainly include the following: display unit board, power supply, control card, control unit.
  • the display unit board is mainly composed of an LED array, and the LED array is encapsulated by a plurality of LED light-emitting points with resin or plastic. According to the working environment of the LED display (indoor and outdoor), the luminous intensity of each LED light-emitting point and the interval between two adjacent LEDs are also different.
  • the traditional LED array is produced and produced by using a certain amount of individually packaged LED unit modules or integrally packaged modules.
  • Individually packaged LED unit packages include leaded packages, planar packages, surface mount packages, piranha packages, power packages, and more. Although these packages can flexibly select a single LED operation mode and environment, when a certain amount of individually packaged LEDs are arranged in a matrix to form an LED display screen, each LED unit of the individual package has a certain volume, resulting in two adjacent The spacing of the LEDs cannot be minimized, so that the resolution of the LED display cannot be further improved, resulting in poor display performance.
  • the LED array packaged by the integral plastic sealing method can reduce the interval between two adjacent LEDs to some extent and improve the resolution and display effect of the LED display screen, usually the interval of the integrally molded LED array is fixed, and is sealed by a plastic package. The mold is decided. At the same time, the production process of using the above two methods to produce the LED array is to place the LED units one by one in the pixels of the corresponding LED array, and the production efficiency is relatively low in the manufacture and production of large-screen LED array displays.
  • the present invention provides a method for preparing a large-area electrode LED array.
  • a large-area electrode LED array preparation method comprises a large-area single-electrode LED preparation method and a large-area two-electrode LED preparation method, including:
  • the LED wafer array attached to the blue film or the UV film is directly connected to the corresponding design substrate for electrode connection after being repeatedly expanded to a required interval, and then driven by the peripheral circuit to be entirely arranged on the substrate.
  • LED wafer arrays enable the fabrication of large area LED arrays.
  • the LED device structure includes a single electrode and a two-electrode structure, and the corresponding design substrate and connection manner are different according to the structure of the LED device.
  • the LED wafer array attached to the blue film or the UV film is subjected to multiple times of crystallizing to achieve the required interval, based on the user-designed substrate, in the corresponding pad
  • the silver paste or the solder is sprayed on the area, and the bottom electrode of each LED wafer of the expanded LED wafer array is calibrated with the pad area on the substrate, and the LED wafer array and the substrate are directly calibrated. Pressing, the pressed LED wafer array and substrate are placed in an incubator to cure the silver paste or solder, and after curing, the blue film or the UV film is removed, and then the pads on the conductive film are on the substrate.
  • the LED wafer array is calibrated and directly pressed after calibration;
  • the process is as follows: after multiple times of crystallizing the LED wafer array attached to the blue film or the UV film to achieve the required interval, the substrate is designed to be expanded after the user-designed substrate
  • the bottom electrode of each LED wafer of the LED wafer array is calibrated with the pad area on the substrate, and the LED wafer array and the substrate are directly pressed after calibration, and then the pressed LED wafer array and lining
  • the bottom is placed in an incubator to cure the silver paste or solder, and the blue film or UV film is removed after curing.
  • the material of the substrate and the conductive film is a silicon wafer or a PCB board.
  • a pad area of the substrate is etched with a plurality of equally spaced column metal lines, and the conductive film is etched with equal-distance row metal lines of the same number as the column metal lines.
  • the row metal line is perpendicular to the column metal line; each of the metal lines is provided with a plurality of equally spaced window opening areas, wherein the window opening area has silver glue or sprayed with solder; adjacent column metal lines are spaced apart from adjacent row metal lines. The spacing of the lines is equal.
  • the pad region of the substrate is etched with vertical row metal lines and column metal lines, and the intersection portions of the row metal lines and the column metal lines are separated by the isolation film, and the row metal lines are separated.
  • the spacing of adjacent column metal lines is equal to the spacing of adjacent row metal lines, and each metal wire is provided with a plurality of equally spaced window opening areas, and the window opening area has silver glue or spray There is solder.
  • the line width of the metal lines, the spacing of adjacent metal lines, the spacing of the windowing areas, and the size of the area can be varied according to the size of the required LED wafer volume and the spacing requirements of the array.
  • the material of the column metal line and the row metal line is a conductor material
  • the conductor material may be aluminum, copper or other conductor material.
  • the LED wafer power, the wavelength of the light, and the volume in the LED wafer array used above are not limited. That is, the LED wafer may be a visible light LED or an invisible light LED.
  • the technical solution of the present invention has the beneficial effects that the method for preparing a large-area electrode LED array of the present invention is in the field of flat panel display and LED array display preparation, and the problem to be solved is to overcome the conventional LED.
  • Array displays have lower resolution, poor thermal performance, and lower manufacturing and production efficiency.
  • the invention adopts a preparation scheme of an LED wafer level array, adopts and expands a crystal expansion technology-multiple crystal expansion technology, and designs and implements a bottom electrode for a single electrode LED wafer according to different electrode distributions of the LED device structure.
  • the substrate and a conductive film connecting the top electrodes are connected to the substrate of the positive electrode and the negative electrode at the electrode distribution surface thereof for the two-electrode LED wafer.
  • the production efficiency of the LED array can be improved, and the two electrodes of each LED unit of the single-electrode LED array are contacted by using a single-electrode substrate and a conductive film.
  • the two-electrode substrate connects the two electrodes of the two-electrode LED array distributed on the same side, and the heat dissipation performance is greatly improved.
  • the wafer-level LED array preparation scheme implemented by the present invention is largely The display resolution of the LED array is improved, the production flexibility in each application is increased, and the display requirement can be well satisfied.
  • Figure 1 is a schematic diagram of a typical single-electrode and two-electrode LED wafer.
  • Figure 3 is a side elevational view of the electrical connection of a single single electrode LED wafer to a substrate.
  • Figure 4 is a side view of the electrical connection of a single two-electrode LED wafer to a substrate.
  • Figure 5 is a flow chart of the preparation method of the present invention.
  • a large-area single-electrode LED array preparation method the specific implementation content and method are as follows:
  • FIG. 1 is a schematic diagram of a typical single-electrode LED wafer and a two-electrode LED wafer.
  • the P electrode is located in the crystal.
  • the N electrode layer is located at the bottom of the wafer, and the N electrode is located above the wafer, and the P electrode layer is located below the wafer; for the two electrodes, as shown in Fig. 1(b), the P electrode and the N electrode are located.
  • the LED wafer when a turn-on voltage and a turn-on current are applied between the PN electrodes, the LED wafer can operate normally (light-emitting).
  • the amount of the on-voltage and current is determined by the material composition of the LED wafer, and the power of the LED wafer composed of different materials is generally different.
  • the LED array used in this embodiment is an array of LED wafers attached to a blue film or a UV film provided by a company that produces LED wafers. Since the adhesion provided by the LED wafer company is small in the interval of the LED wafer array, in order to enable the LED array to be better combined with the electrode contact points on the substrate in the subsequent bonding step with the substrate and the conductive film, The crystal growth treatment is performed according to the position of the electrode contact point on the substrate and the interval between adjacent electrode contact points. Due to the limited ductility of the general LED blue film or UV film, the LED wafer array adhered to the blue film or the UV film has a small single-spreading interval.
  • the LED wafer array attached to the blue film or the UV film can be repeatedly expanded---------------
  • the arrangement (position, spacing) of the LED wafer array obtained until the crystallizing is processed can be equivalent to the position and spacing of the electrode contact points on the substrate, and the crystal expansion diagram is as shown in FIG. 2 .
  • FIG. 3 A schematic diagram of the connection between a single LED pixel of a large-area single-electrode LED array and a substrate and a conductive film according to the present invention is shown in FIG. 3, after a plurality of crystal expansion processes, an artificially controlled blue film or a UV film and a single film are used.
  • the electrode faces of the electrode LED wafer array are bonded to facilitate direct bonding of the bottom of the single electrode LED wafer array attached to the blue film or the UV film to the substrate.
  • the surface of the substrate is coated with corresponding connecting wires and equally spaced contact pads with the array after the crystallizing, so as to spray or dispense the pads on the substrate (conductive silver paste), and then in a certain environment
  • the single-electrode LED wafer array electrodes are directly aligned to the pads on the substrate.
  • the connection of the bottom electrode of each LED pixel of the large area single-electrode LED array to the pad on the substrate is achieved.
  • connection of the conductive film to the upper electrode of each LED pixel of the LED wafer array is achieved.
  • the large-area LED wafer array display system is established, and then the display functions of the entire LED wafer can be realized by connecting the output driving ports of the external driving circuit to the metal wires on the substrate and the conductive film, respectively.
  • the LED device of the embodiment has greatly improved heat dissipation performance, and the interval of the LED array can be flexibly adjusted in the crystal expansion process, and the design of the substrate and the conductive film can also be manually adjusted. Can better meet people's design needs.
  • Figure 4 is a side view of a two-electrode LED wafer electrically connected to a substrate.
  • an artificially controlled blue or UV film is bonded to the bottom of the two-electrode LED wafer array to enable the LED
  • the two electrodes are facing down to achieve a bond with the substrate.
  • the substrate is covered or etched with pads corresponding to the two-electrode LED array, and tin or glue is sprayed on the pads, and under certain conditions, the LEDs directly attached to the blue film or the UV film are directly attached.
  • the wafer array is aligned with the substrate, and after curing, the blue film or the UV film is removed by ultraviolet irradiation. This causes the LED wafer array to be transferred to the substrate and bonded to the substrate for external electrical driving.
  • FIG. 1 A series of steps of the steps implemented by the present invention are shown in FIG. First, the LED wafer array attached to the blue film or UV film provided by the LED wafer manufacturer is subjected to multiple times of crystallizing to achieve the required interval, and for the single-electrode LED array, the solder is soldered on the corresponding design substrate. Place silver paste on the disk area or spray solder.
  • the bottom electrode of each LED wafer of the expanded LED wafer array and the pad area on the substrate after dispensing or soldering After calibration, the LED wafer array and the substrate are directly pressed together, and then the pressed LED wafer array and substrate are placed in an incubator to cure the silver paste or the solder, and after curing, the blue film or the UV film is removed, and then the blue film or the UV film is removed.
  • the pad area on the conductive film is aligned with the LED wafer array on the substrate, and is directly pressed under certain conditions after calibration.
  • the electrodes of each LED wafer of the expanded LED wafer array are directly combined with the pad area on the substrate to be calibrated, and then the blue film or the UV film is removed.
  • the LED wafer array originally adhered to the blue film or the UV film is expanded into a gap and directly transferred to the corresponding substrate to be connected to the substrate or the conductive film, and can be implemented by the external scan driving circuit.
  • the array is scanned and driven to realize the preparation of a large-area LED array.
  • the anode and cathode electrodes are distributed on the same side of the LED wafer, and the substrate is electrically connected to the large-area LED array.
  • the surface of the substrate is plated with a metal film of the corresponding anode and cathode electrodes of the LED wafer, and solder is applied to each LED anode and cathode electrode contact point on the surface of the substrate, and then the LED after the previous crystal expansion is applied under a certain environment.
  • the array directly and precisely aligns the soldering regions on the corresponding substrate at one time, thereby realizing the purpose of physically and electrically connecting the large-area LED array directly with the external substrate.
  • the two-electrode LED wafer attached to the blue film needs to have the electrode side facing up, so that the electrode of each wafer of the LED array and the metal pad on the substrate can be accurately realized. Bonding, and combining the LED wafer electrodes with the metal pads on the substrate, the illuminated side faces up.
  • the substrate has 10 row metal lines numbered 1, 2, 3, ..., 10 and column metal lines numbered a, b, c, ..., j, ten lines
  • the metal lines and the ten column metal lines are respectively etched on the surface of the substrate, and the intersections of the row metal lines and the column metal lines are separated by a silicon oxide film, so that the row and metal lines do not physically and electrically connect.
  • Open the window at a certain interval of each row of metal lines that is, open a contact area of a certain area with equal spacing on each row and line, and open on the intersecting and column lines of the row and the metal lines.
  • the window region is plated with a certain thickness of solder to make corresponding electrode contact with the expanded LED array under certain conditions, thereby realizing physical and electrical connection between each unit of the LED array and an external circuit, facilitating external driving.
  • the circuit performs scanning independent addressing to drive each LED unit to operate.
  • the present invention designs and proposes a substrate for connecting the bottom electrode of the large-area LED array and a conductive film connecting the top electrodes.
  • the substrate material is silicon dioxide or FR4 material PCB, and 10 column metal wires numbered a, b, c, ..., j are etched on the surface of the substrate, and 10 openings are provided on each column metal wire.
  • the 10 window opening areas are equally spaced.
  • the conductive silver glue can be spotted by a dispenser under a certain temperature environment, or the solder can be sprayed with a tin spray machine to directly press the previously obtained LED array directly onto the substrate.
  • each LED unit in the LED array is strictly aligned with the dispensing or tinning on the substrate, and the spacing between any two adjacent LEDs in the LED array is also independent of any phase on the substrate.
  • the spacing between adjacent two window-opening areas is the same, so as to ensure that the electrodes of each LED unit in the LED array are combined with the window-opening area on the corresponding substrate, so that each column of LEDs on the substrate can be aligned with the column metal
  • the wires establish the purpose of physical and electrical connections, and thus the external circuitry can drive the LED arrays of the present invention by row and column scanning.
  • the LED array conductive film of the present invention is provided with row metal wires having the same specifications of the substrate and the number of the metal wires on the substrate.
  • the LED array conductive film according to the present invention includes the numbers 1, 2, 3... 10 total 10 lines, after the single-electrode LED array is pressed and connected with the substrate, the blue film originally adhered to the LED array is removed, and under certain conditions, the conductive film is directly aligned with the LED array.
  • the top electrodes are combined to achieve integration of the LED array with the substrate and the conductive film. Scanning driving of the integrated LED array can be achieved by connecting the drive outputs of the external circuits to the metal lines of the substrate and the conductive film, respectively.

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Abstract

一种大面积电极LED阵列制备方法，包括：附着在蓝膜或者UV膜上的LED晶圆阵列经过多次扩晶达到所需要求间隔后，直接一次性与相应的设计衬底进行电极连接，再通过外围电路驱动整个排列在衬底上的LED阵列，实现大面积LED阵列的制备。其中，LED器件结构包括单电极和双电极结构，根据LED器件结构的不同，其相应的设计衬底和连接方式也不同。该晶圆级别的LED阵列制备方案，很大程度上提高了LED阵列的显示分辨率，增加在各应用中的生产灵活性，能很好的满足显示需求。虽然单个LED阵列制作成本可能较高，但是一旦实现量产，在量产的同时省去了单个LED单元的封装步骤，成本将会大大降低。

Description

一种大面积电极LED阵列制备方法
技术领域
本发明涉及LED阵列显示器制备领域，更具体地，涉及一种大面积电极LED阵列制备方法。
背景技术
LED显示屏幕，作为新的媒体，运动的发光图文，更容易吸引人的注意力，信息量大，随时更新，有着非常好的广告和告示效果。LED屏比霓虹灯更加简单，容易安装和使用，效果变化更多，可以随时更新内容，是很好的户内外发视觉媒体。LED屏幕属于高科技电子产品，价格比较高，以前集中在政府和单位中使用。技术不断进步，价格不断降低，组装和维护更加简单。小型的LED条屏，因为价格便宜，安装和使用简单，慢慢被大众接受，逐步走进大小店铺，应用更加大众化，逐步开始普及。
LED显示屏幕，基本构成单元主要包括以下几个：显示单元板，电源，控制卡，控制单元。而显示单元板主要是由LED阵列构成，LED阵列由很多个LED发光点用树脂或者塑料封装起来的。根据LED显示屏工作环境(户内和户外)不同，其每个LED发光点的发光强度和相邻两个LED间隔也不同。
传统的LED阵列的制作和生产是采用一定量的独立封装好了的LED单元模组或者整体封装好了的模组拼接而成。独立封装的LED单元封装方式包括引脚式封装，平面式封装，表贴封装，食人鱼封装，功率型封装等。这些封装虽然能使单个LED工作方式和环境可以灵活选择，但是将一定量的独立封装的LED按矩阵排列构成LED显示屏时，由于独立封装的每个LED单元具有一定的体积，导致相邻两个LED的间隔无法最小化，使得LED显示屏的分辨率无法进一步提高，进而导致显示效果变差。采取整体塑封方式封装的LED阵列虽然能在一定程度上减小相邻两个LED间隔，提高LED显示屏的分辨率和显示效果，但是通常整体塑封的LED阵列的间隔是固定的，是由塑封模具决定的。同时，使用以上两种方法生产LED阵列的生产过程是逐个将LED单元放置在相应的LED阵列的像素中，在制造和生产大屏幕LED阵列显示器中，生产效率就显得较为低下。
发明内容
为克服上述现有技术中生产LED阵列显示器的两种传统方法灵活性低，生产效率较低，显示分辨率较低的缺点，本发明提出一种大面积电极LED阵列制备方法。
为解决上述技术问题，本发明的技术方案如下：
一种大面积电极LED阵列制备方法，包括大面积单电极LED制备方式和大面积双电极LED制备方式，包括：
附着在蓝膜或者UV膜上的LED晶圆阵列经过多次扩晶达到所需要求间隔后，直接一次性与相应的设计衬底进行电极连接，再通过外围电路驱动整个排列在衬底上的LED晶圆阵列，实现大面积LED阵列的制备。其中，LED器件结构包括单电极和双电极结构，根据LED器件结构的不同，其相应的设计衬底和连接方式也不同。
上述方案的具体为：
大面积单电极LED制备方式，其过程为：对附着在蓝膜或者UV膜上的LED晶圆阵列进行多次扩晶达到所需要求间隔后，基于用户设计的衬底，在对应的焊盘区域点上银胶或喷上焊锡，将扩晶后的LED晶圆阵列的每个LED晶圆的底部电极与衬底上的焊盘区域进行校准，校准后直接将LED晶圆阵列和衬底压合，再将压合后的LED晶圆阵列和衬底置于恒温箱中使银胶或者焊锡固化，固化后去除蓝膜或UV膜，再将导电薄膜上的焊盘与衬底上的LED晶圆阵列进行校准，校准后直接压合；
大面积双电极LED制备方式，其过程为：对附着在蓝膜或者UV膜上的LED晶圆阵列进行多次扩晶达到所需要求间隔后，基于用户设计的衬底，将扩晶后的LED晶圆阵列的每个LED晶圆的底部电极与衬底上的焊盘区域进行校准，校准后直接将LED晶圆阵列和衬底压合，再将压合后的LED晶圆阵列和衬底置于恒温箱中使银胶或者焊锡固化，固化后去除蓝膜或UV膜。
优选的，所述衬底和导电薄膜的材料为硅片或PCB板。
优选的，在制备大面积单电极LED阵列时，其衬底的焊盘区域刻蚀有若干条等间隔的列金属线，导电薄膜上刻蚀有与列金属线数量相同的等间隔行金属线，行金属线与列金属线垂直；各金属线上开设有若干个等间隔的开窗区域，其开窗区域点有银胶或喷有焊锡；相邻列金属线的间隔与相邻行金属线的间隔相等。
优选的，在制备大面积双电极LED阵列时，其衬底的焊盘区域刻蚀有垂直的行金属线和列金属线，行金属线和列金属线交叉部分由隔离薄膜隔离，且行金属线与列金属线的数量相等，相邻列金属线的间隔与相邻行金属线的间隔相等，各金属线上开设有若干个等间隔的开窗区域，其开窗区域点有银胶或喷有焊锡。
优选的，所述金属线的线宽，相邻金属线的间隔、开窗区域的间隔和面积大小能够根据所需LED晶圆体积的大小和阵列的间隔要求而相应改变。
优选的，所述列金属线和行金属线的材料为导体材料，该导体材料可以为铝，铜或者其他导体材料。
上述所用LED晶圆阵列中的LED晶圆功率，发光波长，体积不做限制。即LED晶圆可以是可见光LED，也可以是不可见光LED。
与现有技术相比，本发明技术方案的有益效果是：本发明的一种大面积电极LED阵列制备方法，所属技术领域为平板显示和LED阵列显示器制备领域，所要解决的问题是克服传统LED阵列显示屏的分辨率较低，散热性能较差，并且制备和生产效率较低的缺点。
本发明采取LED晶圆级阵列的制备方案，采用并扩展扩晶技术-多次扩晶技术，并且，根据LED器件结构电极分布不同，设计并实施了一种对于单电极LED晶圆连接底部电极的衬底和一种连接顶部电极的导电薄膜，对于双电极LED晶圆在其电极分布面连接正电极和负电极的衬底。该实施方案高效生产LED阵列，可以根据不同的应用需求灵活设计。
利用本发明实施的大面积LED阵列制备方案，可以提高LED阵列的生产效率，由于采用了对于单电极的衬底和导电薄膜将单电极LED阵列的每个LED单元的两个电极进行接触，对于双电极的衬底将双电极LED阵列的分布在同一侧的两个电极进行连接接触，散热性能得到很大的提升，而且，本发明所实施的晶圆级别的LED阵列制备方案，很大程度上提高了LED阵列的显示分辨率，增加在各应用中的生产灵活性，能很好的满足显示需求。虽然单个LED阵列制作成本可能较高，但是一旦实现量产，在量产的同时省去了单个LED单元的封装步骤，成本将会大大降低。
附图说明
图1为典型单电极和双电极LED晶圆的示意图。
图2为扩晶示意图。
图3为单个单电极LED晶圆与衬底电气连接的侧视图。
图4 为单个双电极LED晶圆与衬底电气连接的侧视图。
图5为本发明的制备方法流程图。
具体实施方式
附图仅用于示例性说明，不能理解为对本专利的限制；为了更好说明本实施例，附图某些部件会有省略、放大或缩小，并不代表实际产品的尺寸；
对于本领域技术人员来说，附图中某些公知结构及其说明可能省略是可以理解的。下面结合附图和实施例对本发明的技术方案做进一步的说明。
一种大面积单电极LED阵列制备方法，具体实施内容和方法如下：
典型的LED晶圆结构包括单电极结构和双电极结构，图1为典型单电极LED晶圆和双电极LED晶圆的结构示意图，对于单电极，如图1（a），其P电极位于晶圆的上方，N电极层位于晶圆的底部，也可N电极位于晶圆的上方，P电极层位于晶圆的下方；对于双电极，如图1（b），其P电极和N电极位于LED晶圆的一侧。根据LED的特性，在PN电极间施加一个导通电压和导通电流时，该LED晶圆就可以正常工作(发光)。该导通电压和电流的大小由该LED晶圆的材料构成决定，不同材料构成的LED晶圆的功率，发光强度一般也不相同。
本实施例所采用的LED阵列是由生产LED晶圆的公司提供的附着在蓝膜或者UV膜上的LED晶圆阵列。由于LED晶圆公司提供的粘附在LED晶圆阵列间隔较小，为了使LED阵列能够在后续与衬底以及导电薄膜压合步骤中与衬底上的电极接触点更好的结合，所以要根据衬底上电极接触点的位置和相邻电极接触点的间隔大小做扩晶处理。由于一般LED蓝膜或者UV膜的延展性有限，导致粘附在蓝膜或UV膜上的LED晶圆阵列单次扩晶间隔很小。为了使LED晶圆阵列能够与衬底上对应的LED晶圆电极接触点完美结合，可对附着在蓝膜或者UV膜上的LED晶圆阵列做多次扩晶——翻膜——扩晶处理，直至扩晶得到的LED晶圆阵列排列规格(位置，间隔)能够与衬底上的电极接触点的位置和间隔相当，扩晶示意图如图2所示。
本发明实施的一种大面积单电极LED阵列的单个LED像素与衬底和导电薄膜的连接示意图如图3所示，经过多次扩晶处理后，人为控制的将蓝膜或者UV膜与单电极LED晶圆阵列的电极面粘合，以方便直接将附着在蓝膜或这UV膜上的单电极LED晶圆阵列底部与衬底结合。衬底表面铺有对应的连接导线和与扩晶后的阵列等间隔等面积的接触焊盘，以便对衬底上的焊盘进行喷锡或点胶（导电银胶），再在一定的环境下，将单电极LED晶圆阵列电极直接对准衬底上的焊盘压合。从而实现大面积单电极LED阵列的每个LED像素的底部电极与衬底上焊盘的连接。压合固化后，通过紫外照射与LED阵列上方电极粘合的蓝膜或UV膜，待蓝膜或UV膜脱落后，将相应设计的导电薄膜在一定条件下通过焊锡连接或者直接压合连接，实现导电薄膜与LED晶圆阵列每个LED像素的上电极的连接。这样，大面积LED晶圆阵列显示系统建立完毕，接下来只要将外部驱动电路的各输出驱动口分别连接衬底和导电薄膜上的金属导线，就可以实现整个LED晶圆的显示功能。相对于传统的LED阵列显示器，该实施方案的LED器件工作时散热性能大大提高，而且，LED阵列的间隔大小可在扩晶工序中灵活调整，衬底和导电薄膜的设计也可以人为调整设计，可以更好的满足人们的设计需求。
图4所示为一个双电极LED晶圆与衬底电气连接的侧视图，在扩晶处理中，人为控制的将蓝膜或UV膜与双电极LED晶圆阵列的底部粘合，以便使得LED的双电极朝下，实现与衬底的结合。同样的，衬底上面铺满或蚀刻与双电极LED阵列相对应的焊盘，并在焊盘上喷锡或点胶，在一定的条件下，直接将附着在蓝膜或UV膜上的LED晶圆阵列与衬底对准结合，固化后，再用紫外照射将蓝膜或者UV膜脱落去除。这样就使LED晶圆阵列转移到衬底上并与衬底进行结合，以便外部电进行驱动。
本发明所实施的一系列步骤流程图如图5所示。首先，将LED晶圆生产商提供的附着在蓝膜或者UV膜上的LED晶圆阵列经过多次扩晶达到所需要求间隔后，对于单电极LED阵列，在对应的设计衬底上的焊盘区域点上银胶或者喷上焊锡，在一定的条件下，将扩晶后的LED晶圆阵列的每个LED晶圆的底部电极与衬底上的点胶或者喷锡后的焊盘区域校准后，直接将LED晶圆阵列和衬底压合，再将压合后的LED晶圆阵列和衬底置于恒温箱中使银胶或者焊锡固化，固化后去除蓝膜或UV膜，再将导电薄膜上的焊盘区域与衬底上的LED晶圆阵列校准，校准后直接在一定的条件下压合。
对于双电极阵列，直接将扩晶后的LED晶圆阵列的每个LED晶圆的电极与衬底上的焊盘区域校准后相结合，再去除蓝膜或UV膜。这样，就将原来粘附在蓝膜或者UV膜上的LED晶圆阵列扩大间隙后直接大面积转移至相应的衬底与衬底或导电薄膜进行连接，并能通过外部扫描驱动电路对本发明实施阵列进行扫描驱动，实现大面积LED阵列的制备。
根据双电极LED晶圆外延结构的阴阳电极分布在LED晶圆同一面的特点，与大面积LED阵列进行电气连接的衬底。在衬底的表面镀有相应的LED晶圆阴阳电极接触的金属薄膜，并在衬底表面的每一个LED阴阳电极接触点镀上焊料，再在一定的环境下，将之前扩晶后的LED阵列直接一次性精确对准相应的衬底上的焊接区域，从而实现大面积的LED阵列直接与外界衬底进行物理和电气连接的目的。在扩晶步骤时，需要将附在蓝膜上的双电极LED晶圆包含电极的一面朝上，这样才能够实现LED阵列的每个晶圆的电极与衬底上的金属焊盘精确的结合，并且LED晶圆电极与衬底上的金属焊盘结合后能将发光面朝上。对于双电极LED器件结构，其衬底上有分为编号为1，2，3，…，10的10条行金属线和编号为a，b，c，…，j的列金属线，十条行金属线和十条列金属线分别蚀刻在衬底的表面，行金属线和列金属线交叉部分由二氧化硅薄膜隔离，这样使得行列金属线不会产生物理和电气连接。在每条行金属线的等间隔一定的区域上做开窗处理，也就是将每条行列线上的开出一些等间距一定区域的接触区域，并在行列金属线交叉部分和列线上开窗区域镀上一定厚度的焊料，以便与扩晶后的LED阵列在一定的条件下进行相应的电极接触，从而实现LED阵列的每个单元与外部电路进行物理和电气连接的目的，方便外部驱动电路进行扫描独立寻址驱动每个LED单元工作发光。
根据单电极LED器件的电极分布在LED器件的顶部和底部，本发明设计并提出了连接大面积LED阵列的底部电极的衬底和连接顶部电极的导电薄膜。衬底材料为二氧化硅或者FR4材料PCB，在衬底表面上刻蚀着10条编号为a，b，c，…，j的列金属线，在每条列金属线上设置有10个开窗区域，10个开窗区域是等间隔设置的。开窗区域都可在一定的温度环境下，用点胶机点上导电银胶，或者用喷锡机喷上焊锡，以便一次性将之前扩晶得到的LED阵列直接压合在衬底上，在压合步骤中，LED阵列中每个LED单元要严格与衬底上点胶处或者喷锡处精确对准，LED阵列中任意相邻两个LED的间隔也要与衬底上的任意相邻两个开窗区域的间隔一致，这样才能保证LED阵列中的每个LED单元的电极与相应的衬底上的开窗区域相结合，从而达到衬底上每列LED都能够与所在列金属线建立物理和电气连接的目的，进而外部电路能够通过行列扫描方式驱动本发明实施的LED阵列。本发明所实施LED阵列导电薄膜上设有对应衬底的规格和衬底上列金属线的数目相等的行金属线，本发明实施的LED阵列导电薄膜包括编号为1,2，3...10共10条行线，在单电极LED阵列与衬底压合连接后，将原来黏在LED阵列上的蓝膜去除，在一定条件下，将该导电薄膜直接对准压合与LED阵列的顶部电极相结合，这样实现了LED阵列与衬底，导电薄膜的集成。将外部电路的驱动输出分别连接至衬底和导电薄膜的金属线上，则可以实现对该集成LED阵列的扫描驱动。
显然，本发明的上述实施例仅仅是为清楚地说明本发明所作的举例，而并非是对本发明的实施方式的限定。对于所属领域的普通技术人员来说，在上述说明的基础上还可以做出其它不同形式的变化或变动。这里无需也无法对所有的实施方式予以穷举。凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等，均应包含在本发明权利要求的保护范围之内。

Claims (6)

  1. 一种大面积电极LED阵列制备方法，其特征在于，包括大面积单电极LED阵列制备方式和大面积双电极LED阵列制备方式，具体为：
    大面积单电极LED阵列制备方式，其过程为：对附着在蓝膜或者UV膜上的LED晶圆阵列进行多次扩晶达到所需要求间隔后，基于用户设计的衬底，在对应的焊盘区域点上银胶或喷上焊锡，将扩晶后的LED晶圆阵列的每个LED晶圆的底部电极与衬底上的焊盘区域进行校准，校准后直接将LED晶圆阵列和衬底压合，再将压合后的LED晶圆阵列和衬底置于恒温箱中使银胶或者焊锡固化，固化后去除蓝膜或UV膜，再将导电薄膜上的焊盘与衬底上的LED晶圆阵列进行校准，校准后直接压合；
    大面积双电极LED阵列制备方式，其过程为：对附着在蓝膜或者UV膜上的LED晶圆阵列进行多次扩晶达到所需要求间隔后，基于用户设计的衬底，将扩晶后的LED晶圆阵列的每个LED晶圆的底部电极与衬底上的焊盘区域进行校准，校准后直接将LED晶圆阵列和衬底压合，再将压合后的LED晶圆阵列和衬底置于恒温箱中使银胶或者焊锡固化，固化后去除蓝膜或UV膜。
  2. 根据权利要求1所述的大面积电极LED阵列制备方法，其特征在于，所述衬底和导电薄膜的材料为硅片或PCB板。
  3. 根据权利要求1所述的大面积电极LED阵列制备方法，其特征在于，在制备大面积单电极LED阵列时，其衬底的焊盘区域刻蚀有若干条等间隔的列金属线，导电薄膜上刻蚀有与列金属线数量相同的等间隔行金属线，行金属线与列金属线垂直；各金属线上开设有若干个等间隔的开窗区域，其开窗区域点有银胶或喷有焊锡；相邻列金属线的间隔与相邻行金属线的间隔相等。
  4. 根据权利要求1所述的大面积电极LED阵列制备方法，其特征在于，在制备大面积双电极LED阵列时，其衬底的焊盘区域刻蚀有垂直的行金属线和列金属线，行金属线和列金属线交叉部分由隔离薄膜隔离，且行金属线与列金属线的数量相等，相邻列金属线的间隔与相邻行金属线的间隔相等，各金属线上开设有若干个等间隔的开窗区域，其开窗区域点有银胶或喷有焊锡。
  5. 根据权利要求3或4所述的大面积电极LED阵列制备方法，其特征在于，所述金属线的线宽，相邻金属线的间隔、开窗区域的间隔和面积大小能够根据所需LED晶圆体积的大小和阵列的间隔要求而相应改变。
  6. 根据权利要求5所述的大面积电极LED阵列制备方法，其特征在于，所述列金属线和行金属线的材料为导体材料。
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