WO2017166571A1 - 掩模板及其制作方法、使用方法以及包括该掩模板的设备 - Google Patents

掩模板及其制作方法、使用方法以及包括该掩模板的设备 Download PDF

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Publication number
WO2017166571A1
WO2017166571A1 PCT/CN2016/094636 CN2016094636W WO2017166571A1 WO 2017166571 A1 WO2017166571 A1 WO 2017166571A1 CN 2016094636 W CN2016094636 W CN 2016094636W WO 2017166571 A1 WO2017166571 A1 WO 2017166571A1
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Prior art keywords
electrode
transparent electrode
layer
transparent
mask
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Ceased
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PCT/CN2016/094636
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English (en)
French (fr)
Inventor
梁魁
李亚坤
崔晓鹏
陈华斌
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BOE Technology Group Co Ltd
Beijing BOE Display Technology Co Ltd
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BOE Technology Group Co Ltd
Beijing BOE Display Technology Co Ltd
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Priority to US15/537,949 priority Critical patent/US10481489B2/en
Publication of WO2017166571A1 publication Critical patent/WO2017166571A1/zh
Anticipated expiration legal-status Critical
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/15—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on an electrochromic effect
    • G02F1/153—Constructional details
    • G02F1/155—Electrodes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/15—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on an electrochromic effect
    • G02F1/1514—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on an electrochromic effect characterised by the electrochromic material, e.g. by the electrodeposited material
    • G02F1/1523—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on an electrochromic effect characterised by the electrochromic material, e.g. by the electrodeposited material comprising inorganic material
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/15—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on an electrochromic effect
    • G02F1/1514—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on an electrochromic effect characterised by the electrochromic material, e.g. by the electrodeposited material
    • G02F1/1523—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on an electrochromic effect characterised by the electrochromic material, e.g. by the electrodeposited material comprising inorganic material
    • G02F1/1525—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on an electrochromic effect characterised by the electrochromic material, e.g. by the electrodeposited material comprising inorganic material characterised by a particular ion transporting layer, e.g. electrolyte
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/15—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on an electrochromic effect
    • G02F1/153—Constructional details
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/15—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on an electrochromic effect
    • G02F1/153—Constructional details
    • G02F1/161—Gaskets; Spacers; Sealing of cells; Filling or closing of cells
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
    • G03F7/0007—Filters, e.g. additive colour filters; Components for display devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0231—Manufacture or treatment of multiple TFTs using masks, e.g. half-tone masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/13625—Patterning using multi-mask exposure

Definitions

  • the present invention relates to the field of manufacturing of display devices, and more particularly to a reticle and a method of fabricating the same, a method of using the same, and an apparatus including the reticle.
  • the UV mask (also known as the mask) is mainly used in the photocuring of the sealant, the edge-oriented film removal process in the effective display area (Active Area),
  • the area is protected from occlusion (liquid crystal is an organic compound that cleaves under strong ultraviolet light. Short-term exposure will reduce its resistivity, and long-term exposure will cause its color to turn yellow, which will affect the display effect).
  • ultraviolet light shielding plates of corresponding sizes are usually produced according to different sizes of the display panels.
  • a schematic view of the structure of a conventional ultraviolet shutter having a light-shielding region which is displayed in black and a light-transmitting region which is shown as a grid shape is illustrated in FIG.
  • the ultraviolet light shielding plate is easily broken during the replacement process.
  • the ultraviolet light shielding plate is fixed by adsorption, which damages the light shielding layer and is scrapped once. Therefore, it is necessary to store a large number of different types of ultraviolet shutters.
  • a storage space for the ultraviolet shutter is often built, which further expands the space occupied by the production line.
  • each of the ultraviolet visors is expensive to manufacture, which increases the manufacturing cost of the display panel.
  • a mask which includes a first transparent substrate, and sequentially formed on the first transparent substrate: a first transparent electrode, an electrochromic layer, and a second A transparent electrode, the first transparent electrode configured to receive selective power to form energized regions of different shapes.
  • a corresponding light shielding pattern can be formed by controlling voltages applied to the first transparent electrode and the second transparent electrode.
  • the mask further includes a TFT array for selectively supplying power to the first transparent electrode between the first transparent substrate and the first transparent electrode.
  • the reticle innovatively combines the TFT array with an electrochromic material to achieve selective power to the electrodes.
  • the first transparent electrode is formed by a grid of criss-crossed electrode lines.
  • the first transparent electrode is fabricated by using the electrode wire to realize an energized region of an arbitrary grid shape, thereby achieving the purpose of controlling the light shielding pattern.
  • the first transparent electrode is comprised of an array of electrode blocks. This enables an energized region of any shape to be realized in the first transparent electrode.
  • the electrochromic layer specifically includes an electrochromic material layer, an ion conductive layer, and an ion storage layer, and is encapsulated at an edge of the electrochromic material layer, the ion conductive layer, and the ion storage layer. Sealant. The sealant can better protect the various layers to increase the life of the mask.
  • a protective layer is disposed on the second transparent electrode.
  • the protective layer can protect the second transparent electrode.
  • the second transparent electrode is formed on the second transparent substrate, and the second transparent electrode is formed by pairing the obtained second transparent substrate with the first transparent substrate. Between the ion storage layer and the second transparent substrate. The use of the second transparent substrate enables better protection of the mask.
  • the second transparent electrode is an integral conductive film layer, and the second transparent electrode is directly plated onto the ion storage layer. This can reduce the manufacturing cost and can also achieve the technical effects of the present invention.
  • the second transparent electrode is formed by a grid of grid lines or a grid of electrode blocks that are criss-crossed.
  • another TFT array is further formed between the second transparent electrode and the second transparent substrate.
  • the TFT array can better control the voltage applied to the second transparent electrode.
  • each of the longitudinal electrode lines and the lateral electrode lines are electrically connected to a drain in a TFT unit adjacent to the strip line in the TFT array.
  • the electrode wires can receive the power supply of the corresponding TFT cells.
  • a method of fabricating a mask comprising the steps of: disposing a first transparent electrode on a first transparent substrate, the first transparent electrode being configured to receive selective power supply to form a differently shaped energized region; an electrochromic layer formed on the first transparent electrode; and a second transparent electrode disposed on the electrochromic layer.
  • forming the electrochromic layer specifically includes sequentially forming an electrochromic material layer, an ion conductive layer, and an ion storage layer, and the method further comprises the steps of: encapsulating the electrochromic layer with a sealant, The edges of the ion conducting layer and the ion storage layer.
  • the electrochromic layer can likewise be constructed using other forms of electrochromic elements.
  • the method further comprises the step of providing a TFT array for selectively supplying power to the first transparent electrode on the first transparent substrate before forming the first transparent electrode. Controlling the TFT array enables precise selection of the power supply area of the first transparent electrode.
  • the step of disposing the first transparent electrode comprises: disposing a grid of criss-crossed electrode lines on the TFT array, wherein each electrode line is connected to the TFT array and the electrode line The drain of the adjacent TFT cell.
  • the step of disposing the first transparent electrode further comprises: providing an insulating layer between the mutually intersecting portions of the criss-crossed electrode lines.
  • the step of disposing the first transparent electrode specifically includes: arranging an array of electrode blocks on the TFT array, wherein each electrode block is connected to a TFT adjacent to the electrode block in the TFT array The drain of the cell.
  • the step of disposing the second transparent electrode on the ion storage layer comprises: forming the second transparent electrode on the second transparent substrate, and the second transparent substrate and the first transparent substrate A transparent substrate to the box.
  • the step of disposing the second transparent electrode on the ion storage layer specifically comprises: plating a layer of the conductive film onto the ion storage layer by an electroplating process.
  • a method of using a reticle in the fabrication of a display panel according to an embodiment of the present invention comprising the steps of:
  • a plurality of schemes for the reticle are pre-stored for a plurality of different sized display panels, wherein each scheme is configured to cause the reticle to present a shading pattern corresponding to the corresponding display panel.
  • an ultraviolet light curing apparatus which includes any of the mask sheets described above.
  • the electrochromic principle of the color-changing glass is combined with a special electrode arrangement to produce a mask which can transmit light in a specific region by selectively loading different electrical signals, thereby achieving the purpose of fabricating a universal mask.
  • the mask can be built into the curing device to design specific application parameters for display panels of different sizes. When switching between display panels of different sizes, it is only necessary to change the parameters to obtain the desired shading pattern, and there is no need to replace the mask separately, which can save a lot of time.
  • the mask of the embodiment of the present invention in the device, it is not necessary to perform special mask customization, which saves production cost.
  • the construction of the storage space for the various masks in the production line can be eliminated, and the production line space can be saved; the time for artificially replacing the mask can be reduced, and the idle time of the production line can be reduced.
  • Figure 1 is a schematic view showing the structure of a conventional ultraviolet shutter according to the prior art
  • FIG. 2 illustrates a cross-sectional structural view of a mask according to an embodiment of the present invention
  • FIG. 3 illustrates a schematic plan view of an electrode according to an embodiment of the present invention
  • FIG. 4 illustrates a connection relationship between the electrode and the TFT unit shown in FIG. 3;
  • FIG. 5 illustrates a schematic plan view of an electrode according to another embodiment of the present invention
  • FIG. 6 is a schematic view showing an operation state of a mask according to an embodiment of the present invention.
  • FIG. 7 is a cross-sectional structural view showing an array substrate with vertical and horizontal electrode lines in a mask according to an embodiment of the present invention.
  • FIG. 8 is a schematic cross-sectional view showing a mask according to another embodiment of the present invention.
  • FIG. 9 is a schematic cross-sectional view showing a mask according to another embodiment of the present invention.
  • FIG. 10 illustrates a schematic flow chart of a method of fabricating a reticle in accordance with an embodiment of the present invention.
  • FIG. 1 illustrates a schematic structural view of a conventional mask according to the prior art.
  • the conventional ultraviolet shutter includes a fixed light-shielding region 11 and a light-transmitting region 12.
  • each of the light shielding regions 11 corresponds to each active area (Active Area, abbreviated as AA area) of the liquid crystal panel, thereby performing protective shielding on the liquid crystal in each AA area during the UV curing process.
  • the light transmissive area 12 corresponds to the area of the sealant in the liquid crystal panel and the edge of the effective display area, so that ultraviolet light is transmitted through the shutter during the UV curing process to illuminate the corresponding area, thereby realizing the light of the sealant.
  • the mask mainly includes a transparent substrate 101, a TFT array 102, a first transparent electrode 103, an electrochromic material layer 104, an ion conductive layer 105, an ion storage layer 106, and a second transparent from bottom to top. Electrode 107.
  • the transparent substrate 101 may be made of a material such as glass or a transparent resin.
  • the TFT array 102 and the transparent substrate 101 constitute a structure similar to the array substrate in the liquid crystal panel.
  • the method of forming the TFT array 102 is similar to the method of forming a TFT array in a conventional array substrate.
  • a gate electrode, a gate insulating layer, an active layer, a source/drain layer, and the like are formed on a substrate to form a TFT array of a conventional top gate type structure or a bottom gate type structure.
  • the first transparent electrode 103 is formed on the TFT array 102, thereby receiving power from the respective TFT units in the TFT array 102 to the transparent electrode 103.
  • the power supply of the first transparent electrode in the mask of the present invention is not limited to being realized by the TFT array, and may be implemented by other forms, for example, by connecting a plurality of power supply lines to the first transparent electrode and using an external mask.
  • the array of switches on the template will be explained by taking a power supply form of a TFT array as an example.
  • the first transparent electrode 103 is composed of a grid of criss-crossed electrode lines (shown more clearly in FIG. 3).
  • the criss-crossed electrode lines are comprised of uniformly disposed transverse film electrodes and longitudinal film electrodes.
  • the lateral film electrode and the longitudinal film electrode can be formed by a plating etching process.
  • the lateral film electrode and the longitudinal film electrode are insulated from each other, for example, by providing an insulating layer between the portions where the two intersect each other.
  • the criss-crossed electrode lines form a grid of electrode lines throughout the working area of the reticle. The width of the vertical and horizontal electrode lines and the interval between the lines can be set according to the accuracy of the required pattern size.
  • electrochromic material layer 104, ion conducting layer 105 and ion storage layer 106 constitute an electrochromic layer.
  • the electrochromic material layer 104 is mainly responsible for discoloration, for example, a transition element or an alloy of a rare earth element and magnesium (for example, a magnesium-nickel alloy), or a material such as nickel oxide.
  • the ion conducting layer 105 also referred to as an electrolyte layer, is made, for example, of a solid or liquid electrolyte, and functions to transport ions (e.g., small positive ions such as H+, Li+, etc.) between the electrochromic material layer 104 and the ion storage layer 106. .
  • the ion storage layer 106 which is also referred to as the counter electrode layer, functions to store and provide the ions required for electrochromism to maintain equilibrium in the electrochromic process.
  • a sealant 108 is encapsulated at the edges of the three layers.
  • the sealant 108 is sandwiched between the upper and lower transparent electrodes.
  • the electrochromic layer may likewise be constructed of other forms of elements capable of effecting electrochromism.
  • the second transparent electrode 107 may be composed of an entire electrode film layer (ie, having no holes or holes). And the transparent electrode can be powered by being connected to a power supply electrode having a polarity opposite to that used to power the TFT.
  • the criss-crossed electrode lines 31 are disposed to be electrically connected to drains on adjacent TFT cells 32.
  • the gate line 33 and the source line 34 of the TFT unit 32 are used to control the conduction of the TFT unit 32.
  • the electrode line 31 may be formed to directly overlap the drain of the TFT unit.
  • one row or one column of TFTs can be used.
  • the unit group is connected to the same horizontal electrode line or vertical electrode line. And each TFT unit is connected only to one electrode line, thereby supplying power to the electrode line by turning on the TFT unit to which one electrode line is connected.
  • a transparent region of the grid structure By supplying power to a specific electrode line, a transparent region of the grid structure can be realized.
  • grid structures of different sizes can be realized.
  • the width of the cross-sectional electrode lines in the thin film electrode and the interval between the lines may be set according to the accuracy of the required pattern size, for example, may be set between several micrometers and several hundred micrometers. Of course other sizes are also possible.
  • the spacing between adjacent electrode lines is constant, i.e., the electrode lines are evenly distributed across the reticle.
  • FIG. 5 illustrates a schematic plan view of an electrode according to another embodiment of the present invention.
  • the electrodes may be constituted by an array of the electrode blocks 31 shown in FIG.
  • Each of the electrode blocks 31 is disposed to be electrically connected to a drain on the adjacent TFT unit 32.
  • the gate line 33 and the source line 34 of the TFT unit 32 are used to control the conduction of the TFT unit 32.
  • the electrode line 31 may be formed to be directly overlapped on the drain of the TFT unit 32.
  • the shape of the electrode block 31 is not limited to the rectangular shape illustrated in FIG. 5, but may be made into various shapes including a polygon or the like as needed.
  • the distribution density of the electrode blocks can be set according to the accuracy of the required mask pattern.
  • the second transparent electrode 107 can also have the arrangement shown in FIG. 4 or FIG. 5 to cooperate with the first transparent electrode 107 to achieve a more precise transparent pattern.
  • a protective layer is further disposed on the second transparent electrode 107 to protect the second transparent electrode 107.
  • the preparation methods of the above respective layers include electroplating, deposition, etching, and the like according to materials used for the respective layers, and are not specifically described herein.
  • the electrochromic layer is in a metal reflective state when not energized, and is opaque, for example, black, as shown by the black block in FIG.
  • the electrochromic material layer in the region corresponding to the partial electrode line absorbs hydrogen or other ions into a transparent state of the non-conductor, as shown by the area around the black block in FIG. In FIG.
  • the grid arrangement of the electrode lines is schematically illustrated in the area around the black block in FIG. 6 in the form of a broken line. Since the electrode lines are generally made of a transparent material, the electrode lines are actually invisible. And because of the electricity in the embodiment of the present invention At least one of the poles is formed by a grid of cross-corrugated electrode lines. In practical applications, the electrodes on both sides of the corresponding area can be powered according to the size and position of the area irradiated by the ultraviolet light, thereby realizing, for example, The transparent grid shown in Figure 6 further implements a non-transparent block array.
  • M is a rare earth element or an alloy of a transition element and magnesium
  • MHx is a rare earth element or a compound of a transition element and hydrogen
  • H2 is hydrogen.
  • the film material exhibits different properties.
  • M is a lanthanum element
  • the ruthenium film is in a reflective state when hydrogen is not passed; in the process of hydrogen gas, the ruthenium film absorbs hydrogen atoms to form a ruthenium hydrogen compound, and the light transmission property of the compound varies with the ratio of ruthenium to hydrogen atoms. And change.
  • Electrochromism is the control of the color change process by controlling the hydrogen production of the ion storage layer by changes in current and voltage.
  • the array substrate includes a transparent substrate 101, a TFT array 102, and a first transparent electrode 103 composed of a grid of electrode lines criss-crossing.
  • the transparent substrate 101 on which the TFT array 102 is formed is manufactured in a manner similar to the fabrication method of the array substrate in the display panel, and will not be described in detail herein.
  • a first transparent electrode 103 composed of a grid of transparent conductive electrode lines crisscrossed is formed on the transparent substrate 101 on which the TFT array 102 is formed.
  • the electrode 103 specifically includes a lateral film electrode 1031 and a longitudinal film electrode 1032.
  • an insulating layer 1033 is formed between the portions where the lateral film electrode 1031 and the longitudinal film electrode 1032 cross each other.
  • the lateral thin film electrode 1031, the insulating layer 1033, and the vertical thin film electrode 1032 can be formed by a plating etching technique.
  • the technology specifically includes physical vapor deposition (PVD) and wet etching or dry etching. The way the coating is etched allows for better accuracy and more reliable quality than other methods.
  • the thin film electrode can be made of ITO (indium tin oxide) material, and can also use AZO (aluminum-doped zinc oxide), ATO (yttrium-doped tin dioxide), FTO (fluorine-doped SnO2 conductive glass), etc. Made of materials.
  • FIG. 8 illustrates a schematic cross-sectional structure of a mask according to another embodiment of the present invention.
  • the embodiment shown in FIG. 8 differs from the embodiment shown in FIG. 2 in that it is on the second transparent electrode 107.
  • Another transparent substrate 109 is disposed thereon. Description of the same components of the embodiment as the previous embodiment is omitted here. With the other transparent substrate 109, the durability of the entire mask can be improved.
  • the second transparent electrode 107 may be fabricated on the transparent substrate 109 in advance, and the prepared two transparent substrates 109 are paired to form a final mask, which improves manufacturing efficiency and yield.
  • FIG. 9 is a schematic cross-sectional view showing a mask according to still another embodiment of the present invention.
  • the embodiment shown in FIG. 9 differs from the embodiment shown in FIG. 8 in that another TFT array 110 is disposed between the second transparent electrode 107 and the other transparent substrate 109. Description of the same components of the embodiment as the previous embodiment is omitted here.
  • the TFT array 110 can be disposed on another transparent substrate 109 in a manner similar to the TFT array 102.
  • an array substrate of the same size electrode layer having a TFT array and a grid of criss-interlaced electrode lines can be prepared in advance to serve as a lower substrate and an upper substrate, respectively, which simplifies the manufacturing process.
  • the first transparent electrode 103 and the second transparent electrode 107 are each composed of a grid of criss-crossed electrode lines to obtain an advantage that the formed pattern is more precise.
  • FIG. 10 illustrates a schematic flow chart of a method of fabricating a reticle in accordance with an embodiment of the present invention.
  • the method mainly includes the following steps: S1, disposing a TFT array 102 and a first transparent electrode 103 on a first transparent substrate 101; S2, sequentially forming an electrochromic layer on the first transparent electrode 103; S3, in the A second transparent electrode 107 is disposed on the ion storage layer 106.
  • the first transparent electrode 103 is configured to accept power from the TFT array 102 to form energized regions of different shapes.
  • the electrochromic layer specifically includes an electrochromic material layer 104, an ion conductive layer 105, and an ion storage layer 106 which are sequentially formed.
  • the first transparent electrode 103 is composed of transverse thin film electrode lines and longitudinal thin film electrodes which intersect each other. A mesh of lines is formed in which each electrode line is connected to a drain of a TFT unit adjacent to the electrode line in the TFT array, and an insulating layer is preferably disposed between the electrode line portions that intersect each other.
  • the second transparent electrode 107 may be a monolithic electrode layer (which may be plated onto the ion storage layer by an electroplating process) or a criss-crossing electrode line similar to the first transparent electrode 103.
  • the first transparent electrode 103 includes an array of electrode blocks, wherein each electrode block is connected to a drain of a TFT unit adjacent to the electrode block in the TFT array.
  • the method further includes encapsulating the edges of the electrochromic material layer, the ion conductive layer, and the ion storage layer with a sealant to better protect the layers.
  • a protective layer (not shown in FIG. 2) is formed on the formed second transparent electrode for protecting the second transparent electrode.
  • the second transparent electrode may be formed on the second transparent substrate, and the second transparent substrate and the first transparent substrate may be The box is formed to provide better protection of the layers in the reticle.
  • another TFT array 110 is formed on the second transparent substrate 109 before the second transparent electrode 107 is formed on the second transparent substrate 109.
  • the reticle can be provided as a fixed component in the ultraviolet curing apparatus used in the LCD manufacturing process. And determining, according to the size and the dot pitch of the display panel to be processed by the curing device, which electrode lines in the electrode need to be turned on during curing, and then obtaining a suitable light shielding pattern in actual operation according to the determined result, The display panel is cured.
  • the corresponding scheme is pre-edited for various types of display panels that need to be processed. In each of the schemes, various parameters of the corresponding mask pattern are stored, thereby realizing the automatic processing for the display panel that is actually to be processed, using a corresponding scheme.
  • different voltages may be applied to the respective electrode lines according to different requirements for light transmittance in the processing process, thereby obtaining light-transmitting regions having different light transmittances. This further enhances the range of application of the reticle of the embodiment of the present invention.
  • the reticle according to the present application is not only suitable for use as a visor in an ultraviolet curing apparatus, but is also suitable as a visor that needs to change a opaque pattern in other various fields.

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Abstract

一种掩模板，用于制造掩模板的方法，包括掩模板的设备，以及掩模板的使用方法，其中掩模板包括第一透明基板（101），在第一透明基板（101）上依次形成的第一透明电极（103）、电致变色层和第二透明电极（107），第一透明电极（103）被配置为接受选择性供电以形成不同形状的通电区域。

Description

掩模板及其制作方法、使用方法以及包括该掩模板的设备
相关申请的交叉引用
本申请要求于2016年4月1日提交的中国专利申请No.201610198665.7的优先权，在此通过引用将其全部内容并入本文。
技术领域
本发明涉及显示设备的制作领域，尤其涉及掩模板及其制作方法、使用方法以及包括该掩模板的设备。
背景技术
在TFT-LCD制程中，紫外光遮板(UV Mask，也被称为掩模板)主要用于在密封胶的光固化、有效显示区(Active Area)的边缘取向膜去除过程中，对液晶所在区域进行保护性遮挡(液晶是一种有机化合物，在强紫外线照射下会发生裂解，短时间照射会使其电阻率下降，长时间照射会使其颜色变黄，这将影响显示效果)。
在现有技术中，通常根据显示面板的不同尺寸，制作相应尺寸的紫外光遮板。图1中图示了常规的紫外光遮板的结构示意图，其中该紫外光遮板具有被显示为黑色的遮光区和被显示为网格状的透光区。然而，在制作显示屏时，需要针对不同尺寸的显示面板，人工更换不同尺寸的紫外光遮板，这往往需要手动操作，很浪费时间。另外在更换过程中易造成紫外光遮板的破碎，现有技术是用吸附的方式对紫外遮光板进行固定，这会损伤遮光的遮光层，用过一次就报废。因此需要存储大量不同型号的紫外光遮板。在生产线中往往专门建有用于紫外光遮板的储存空间，这使得生产线占用的空间进一步扩大。另外，每张紫外遮光板的制作成本很高，这提高了显示面板的制作成本。
因此，需要一种改进的掩模板来克服上述的问题。
发明内容
根据本发明的一方面，提出了一种掩模板，其包括第一透明基板，以及在所述第一透明基板上依次形成的：第一透明电极、电致变色层和第二 透明电极，所述第一透明电极被配置为接受选择性的供电以形成不同形状的通电区域。利用该掩模板，可通过控制施加到第一透明电极以及第二透明电极上的电压来形成相应的遮光图案。该方案使该掩模板具有可重复利用和通用性的优点。
在优选实施例中，所述掩模板还包括在所述第一透明基板和所述第一透明电极之间的用于对第一透明电极进行选择性供电的TFT阵列。该掩模板创新地将TFT阵列与电致变色材料相结合，从而实现对电极的选择性供电。
在优选实施例中，所述第一透明电极由纵横交错的电极线的网格构成。利用电极线制作第一透明电极可实现任意网格形状的通电区域，从而达到控制遮光图案的目的。
在优选实施例中，所述第一透明电极由电极块的阵列构成。这可在第一透明电极中实现任意形状的通电区域。
在优选实施例中，所述电致变色层具体包括电致变色材料层、离子导电层和离子存储层，并且在所述电致变色材料层、离子导电层和离子存储层的边缘处封装有密封胶。该密封胶可更好地为保护各个层，以提高该掩模板的寿命。
在优选实施例中，在所述第二透明电极上设置有保护层。该保护层可实现对第二透明电极的保护。
在优选实施例中，所述第二透明电极在第二透明基板上形成，并且通过将得到的所述第二透明基板与所述第一透明基板进行对盒，使所述第二透明电极形成在所述离子存储层和所述第二透明基板之间。利用第二透明基板能够起到对掩模板的更好的保护。
在另一优选实施例中，所述第二透明电极为整体的导电膜层，所述第二透明电极被直接镀到所述离子存储层上。这可减小制造成本，并且能够同样实现本发明的技术效果。
在优选实施例中，所述第二透明电极由纵横交错的电极线的网格或电极块的阵列构成。
在进一步优选实施例中，在所述第二透明电极和所述第二透明基板之间还形成有另一TFT阵列。该TFT阵列可更好地控制施加到第二透明电极上的电压。
在进一步优选实施例中，在纵横交错的电极线中，在纵电极线和横电 极线相互交叉的部分之间形成有绝缘层。
在优选实施例中，所述纵电极线和所述横电极线中的每条电极线均电气连接到所述TFT阵列中与该条电极线邻近的TFT单元中的漏极。由此，在相连的TFT单元被导通的情况下，电极线可接收相应的TFT单元的供电。
根据本发明的另一方面，提出了一种制作掩模板的方法，包括以下步骤：在第一透明基板上设置第一透明电极，所述第一透明电极被配置为接受选择性的供电以形成不同形状的通电区域；在所述第一透明电极上形成电致变色层；在所述电致变色层上设置第二透明电极。
在优选实施例中，形成所述电致变色层具体包括依次形成电致变色材料层、离子导电层和离子存储层，并且该方法还包括以下步骤：利用密封胶封装所述电致变色层、离子导电层和离子存储层的边缘。该电致变色层同样可以利用其它形式的电致变色元件构成。
在优选实施例中，所述方法还包括以下步骤：在形成所述第一透明电极之前，在所述第一透明基板上设置用于对第一透明电极进行选择性供电的TFT阵列。控制该TFT阵列可实现对第一透明电极的供电区域的精确选择。
在进一步优选实施例中，设置第一透明电极的步骤具体包括：在所述TFT阵列上设置纵横交错的电极线的网格，其中每个电极线连接到所述TFT阵列中与该电极线相邻的TFT单元的漏极。
在优选实施例中，设置第一透明电极的步骤还包括：在纵横交错的电极线的相互交叉的部位之间设置绝缘层。
在另一优选实施例中，设置第一透明电极的步骤具体包括：在所述TFT阵列上设置电极块的阵列，其中每个电极块连接到所述TFT阵列中与该电极块相邻的TFT单元的漏极。
在优选实施例中，在所述离子存储层上设置第二透明电极的步骤具体包括：将所述第二透明电极形成在第二透明基板上，并且将所述第二透明基板与所述第一透明基板对盒。
在优选实施例中，在所述离子存储层上设置第二透明电极的步骤具体包括：利用电镀工艺将一层导电膜层镀到所述离子存储层上。
根据本发明的又一方面，提出了一种根据本发明的实施例的掩模板在显示面板的制作中的使用方法，包括以下步骤：
针对多个不同尺寸的显示面板，预先存储用于所述掩模板的多个方案，其中每个方案被配置为使所述掩模板呈现与相应的显示面板对应的遮光图案。
根据本发明的又一方面，提出了一种紫外光固化设备，其包括任一种上文所述的掩模板。
根据本发明的实施例将变色玻璃的电致变色原理与特殊的电极布置相结合，制作出可以通过选择性加载不同电信号得到在特定区域透光的掩模板，从而达到制作通用掩模板的目的。
另外，该掩模板可以内置于固化设备内，通过针对不同的尺寸的显示面板，设计特定的应用参数。在切换不同尺寸的显示面板时，只需进行参数的变更，即可得到所需的遮光图案，不需要再专门更换掩模，这可以节省大量的时间。
并且通过在设备中应用本发明的实施例的掩模板，不需要进行专门的掩模板定制，节省了生产成本。在应用于显示面板的制作时，又可以取消产线中的用于各种掩模板的储存空间的建造，节约产线空间；还可以减少人为更换掩模板的时间，减少产线的空闲时间。
附图说明
包括附图以提供对实施例的进一步理解并且附图被并入本说明书中并且构成本说明书的一部分。附图图示了实施例并且与描述一起用于解释本发明的原理。将容易认识到其它实施例和实施例的很多预期优点，因为通过引用以下详细描述，它们变得被更好地理解。附图的元件不一定是相互按照比例的。同样的附图标记指代对应的类似部件。
图1图示了根据现有技术的常规紫外光遮板的结构示意图；
图2图示了根据本发明的一实施例的掩模板的截面结构示意图；
图3图示了根据本发明的一实施例的电极的平面结构示意图；
图4图示了图3所示的电极与TFT单元的连接关系；
图5图示了根据本发明的另一实施例的电极的平面结构示意图；
图6图示了根据本发明的一实施例的掩模板的工作状态示意图；
图7图示了根据本发明的一实施例的掩模板中的带有纵横电极线的阵列基板的截面结构示意图；
图8图示了根据本发明的另一实施例的掩模板的截面结构示意图；
图9图示了根据本发明的另一实施例的掩模板的截面结构示意图；
图10图示了根据本发明的一实施例的掩模板的制作方法的示意流程图。
具体实施方式
在以下详细描述中，参考附图，该附图形成详细描述的一部分，并且通过其中可实践本发明的说明性具体实施例来示出。对此，参考描述的图的取向来使用方向术语，例如“顶”、“底”、“左”、“右”、“上”、“下”等。因为实施例的部件可被定位于若干不同取向中，为了图示的目的使用方向术语并且方向术语绝非限制。应当理解的是，可以利用其他实施例或可以做出逻辑改变，而不背离本发明的范围。因此以下详细描述不应当在限制的意义上被采用，并且本发明的范围由所附权利要求来限定。
应当理解的是，本文描述的各个示例性实施例的特征可以相互组合，除非特别另外指出。
图1图示了根据现有技术的常规掩模板的结构示意图。从图1可知，常规的紫外光遮板包括固定不变的遮光区11和透光区12。其中在使用中，每个遮光区11对应于液晶面板的每个有效区(Active Area，简称为AA区)，从而在UV固化过程中对每个AA区中的液晶进行保护性遮挡。而透光区12对应于液晶面板中的密封胶和有效显示区的边缘所在的区域，从而在UV固化过程中使紫外光透过该遮板以照射到相应区域中，从而实现密封胶的光固化和AA区的边缘取向膜的去除。然而，常规的紫外光遮板中的遮光区11和透光区12的布局是固定不变的，从而需要针对不同尺寸的液晶面板设置不同尺寸的紫外光遮板。这导致了显示面板的制造过程中的繁琐并且提高了制造成本。
图2图示了根据本发明的一个实施例的掩模板的截面结构示意图。从图2可看出，该掩模板从下到上主要包括透明基板101、TFT阵列102、第一透明电极103、电致变色材料层104、离子导电层105，离子存储层106、第二透明电极107。透明基板101可以由玻璃或透明树脂等材料制成。而TFT阵列102和透明基板101构成了类似于液晶面板中的阵列基板的结构。TFT阵列102的形成方法与常规的阵列基板中的TFT阵列的形成方法类似。例如，在基板上形成栅极、栅绝缘层、有源层、源漏层等，以形成常规的顶栅型结构或底栅型结构的TFT阵列。第一透明电极103形成在TFT阵列 102上，从而接受TFT阵列102中的各个TFT单元对透明电极103的供电。当然，本发明的掩模板中的第一透明电极的供电不限于通过TFT阵列来实现，还可通过其它形式来实现，例如通过将多根供电线连接到第一透明电极并且采用外置于掩模板上的开关阵列。下文以TFT阵列的供电形式为例对本发明的实施例进行解释。
在电极的一个具体示例中，第一透明电极103由纵横交错的电极线的网格(在图3中更清楚示出)构成。如下文将进一步详细描述的，该纵横交错的电极线由均匀布置的横向薄膜电极和纵向薄膜电极构成。该横向薄膜电极和纵向薄膜电极可利用镀膜刻蚀的工艺制成。其中横向薄膜电极与纵向薄膜电极相互绝缘，例如利用通过在两者相互交叉的部位之间设置绝缘层的方式。该纵横交错的电极线构成了遍布掩模板的工作区域的电极线网格。纵横电极线的宽度和线之间的间隔可根据所需要的图案尺寸的精度来设置。
再参考图2，电致变色材料层104、离子导电层105和离子存储层106构成了电致变色层。电致变色材料层104主要担负着变色的作用，例如由过渡元素或稀土元素与镁的合金(例如镁镍合金)、或氧化镍等材料制成。离子导电层105，又称为电解质层，例如由固态或液态的电解质制成，作用是使离子(例如H+、Li+等小正离子)在电致变色材料层104和离子存储层106之间传输。而离子存储层106又被称为对电极层，作用是存储和提供电致变色所需的离子，使电致变色过程维持平衡。而为了保持电致变色材料层104、离子导电层105和离子存储层106的结构稳定，在这三个层的边缘处封装有密封胶108。优选地，该密封胶108被夹在上下两个透明电极之间。应该认识到，该电致变色层同样可以由能够实现电致变色的其它形式的元件构成。
第二透明电极107可以由整层的电极膜层(即不具有孔或洞)构成。而该透明电极可通过连接到供电电极来被供电，该供电电极具有与对TFT供电所使用的电极相反的极性。
以下具体描述TFT阵列与电极之间的连接方式。如图4所示，在一个实施例中，该纵横交错的电极线31被设置为与邻近的TFT单元32上的漏极电气连接。而TFT单元32的栅极线33和源极线34被用于控制TFT单元32的导通。在一个示例中，该电极线31可以被形成为直接搭接在TFT单元的漏极上。为了保证一条电极线能够得到足够的供电，可以将一行或一列TFT 单元组连接到同一条横电极线或纵电极线。而每个TFT单元仅连接到一条电极线，从而通过导通一条电极线所连接到的TFT单元来对该条电极线进行供电。而通过对特定电极线进行供电，可实现网格结构的透明区域。具体地，通过对TFT阵列的供电进行控制，可实现不同尺寸的网格结构。而薄膜电极中的纵横电极线的宽度和线之间的间隔可根据所需要的图案尺寸的精度来设置，例如可以被设置在几微米到几百微米之间。当然其它的尺寸也是可能的。优选地，相邻的电极线之间的间隔是恒定的，即电极线均匀分布在掩模板上。
图5图示了根据本发明的另一实施例的电极的平面结构示意图。其中，电极可以由图5中所示的电极块31的阵列构成。每一个电极块31被设置为与邻近的TFT单元32上的漏极电气连接。而TFT单元32的栅极线33和源极线34被用于控制TFT单元32的导通。在一个示例中，该电极线31可以被形成为直接搭接在TFT单元32的漏极上。相比于图4中所示的实施例，图5中的该实施例的电极布置的优点是，通过控制TFT单元32对相应区域的电极块31进行供电，可实现任意形状的掩模图案，并不限于块状的掩模图案。值得注意的是，该电极块31的形状不限于图5中图示的矩形形状，而根据需要可被制作成各种形状，包括多边形等。而电极块的分布密度可以根据所要求的掩模图案的精度来设置。
在优选的实施例中，第二透明电极107同样可以具有图4或图5所示的布置，以与第一透明电极107相配合实现更精确的透明图案。在优选的实施例中，在第二透明电极107上还设置了保护层，以保护第二透明电极107。
以上各个层的制备方法根据各个层所使用的材料包括电镀、沉积、蚀刻等，在此不对其做具体描述。
以下描述电致变色层的工作原理。该电致变色层在未通电情况下，呈金属反射态，不透光，例如呈现黑色，如图6中的黑色区块所示那样。以第一透明电极由纵横交错的电极线构成并且第二透明电极由整块电极层构成为例，在第一透明电极的部分电极线通过TFT单元被供电并且第二透明电极被供应相对的电压后，该部分电极线所对应区域的电致变色材料层吸氢或其它离子，转化为非导体的透明态，如图6中的黑色区块周围的区域所示那样。在图6中，为了便于理解，图6中的黑色区块周围的区域中还以虚线的形式示意性图示了电极线的网格布置。而由于电极线一般为透明材料制成，所以实际上电极线是不可见的。而由于本发明的实施例中的电 极中的至少一个是由纵横交错的电极线的网格构成，在实际应用中，可以根据所需要紫外光照射的区域的大小和位置来对相应区域两侧的电极进行加电，从而实现例如图6所示的透明网格，进而实现非透明的块状阵列。
以下以稀土或过渡元素与镁的氢化物这一电致变色材料为例，解释电致变色的机理。其它材料的电致变色原理大体类似，在此不一一列举。
变色的过程例如如下式所示：2M+xH2＝2MHx
其中，M为稀土元素或过渡元素与镁的合金；MHx为稀土元素或过渡元素与氢的化合物；H2为氢气。随着x的变化，膜层材料显示出不同的性质。例如当M为钇元素，在未通氢气时，钇膜处于反射状态；在通氢气的过程中，钇膜吸收氢原子形成钇氢化合物，此化合物的透光性能随着钇与氢原子的比值而改变。在x达到2时，钇膜的金属性最强，处于高反射导体状态；x值增到2.85时，钇膜反射光的性能有所下降；x继续增加到3时，膜变成完全透明。又如当M为Mg2Ni时，原始态Mg2Ni为高反射导体状态，当吸收氢气时，透光性能逐渐改变，当x为4的时候，Mg2Ni的吸氢值达到最大，此时的膜呈现出透明的状态。电致变色，就是通过电流电压的变化控制离子存储层的氢气产量，从而实现对变色过程的控制。
图7图示了根据本发明的一实施例的掩模板中的带有纵横电极线的阵列基板的纵横两个方向的截面结构示意图。由图5可看出，该阵列基板包括透明基板101、TFT阵列102和由纵横交错的电极线的网格构成的第一透明电极103。形成有TFT阵列102的透明基板101以类似于显示面板中的阵列基板的制作方法来制造，在此不对其进行详细描述。在形成有TFT阵列102的透明基板101上制作由纵横交错的透明导电电极线的网格构成的第一透明电极103。电极103具体包括横向薄膜电极1031和纵向薄膜电极1032。而在横向薄膜电极1031和纵向薄膜电极1032相互交叉的部分之间形成有绝缘层1033。该横向薄膜电极1031、绝缘层1033、纵向薄膜电极1032可通过镀膜刻蚀的技术制成。该技术具体包括物理气相沉积(PVD)和湿法蚀刻或干法刻蚀等。镀膜刻蚀的方式相比于其它方式可实现更好的精度和更可靠的质量。而薄膜电极可利用ITO(氧化铟锡)材料制成，也可利用AZO(铝掺杂的氧化锌)、ATO(锑掺杂的二氧化锡)、FTO(掺杂氟的SnO2导电玻璃)等材料制成。
图8图示了根据本发明的另一实施例的掩模板的截面结构示意图。图8所示的实施例相比于图2所示的实施例的区别在于，其在第二透明电极107 上设置了另一透明基板109。在此省略了该实施例中与上一实施例相同的部件的描述。利用该另一透明基板109，可以提高整个掩模板的耐久性。另外可以将第二透明电极107提前制作在该透明基板109上，并且将制备好的两个透明基板109对盒形成最终的掩模板，这提高了制造效率和良品率。
图9图示了根据本发明的再另一实施例的掩模板的截面结构示意图。图9所示的实施例相比于图8所示的实施例的区别在于，其在第二透明电极107与另一透明基板109之间设置了另一TFT阵列110。在此省略了该实施例中与上一实施例相同的部件的描述。该TFT阵列110可以类似于TFT阵列102的方式被设置在另一透明基板109上。在实际制作过程中，可以预先制作相同规格的具有TFT阵列和由纵横交错电极线的网格构成的电极层的阵列基板以分别用作下基板和上基板，这可简化制造工序。并且第一透明电极103和第二透明电极107均由纵横交错的电极线的网格构成可获得使所形成的图案更加精确的优点。
图10图示了根据本发明的一实施例的掩模板的制作方法的示意流程图。该方法主要包括以下步骤：S1、在第一透明基板101上设置TFT阵列102和第一透明电极103；S2、在所述第一透明电极103上依次形成电致变色层；S3、在所述离子存储层106上设置第二透明电极107。该第一透明电极103被配置为接受TFT阵列102的供电以形成不同形状的通电区域。该电致变色层具体包括依次形成的电致变色材料层104、离子导电层105和离子存储层106，在一个示例中，该第一透明电极103由相互交叉的横向薄膜电极线和纵向薄膜电极线的网格构成，其中每个电极线连接到所述TFT阵列中与该电极线相邻的TFT单元的漏极，并且优选地在相互交叉的电极线部分之间设置绝缘层。而第二透明电极107可以是整块电极层(这可利用电镀工艺将一层导电膜层镀到所述离子存储层上)或者是与第一透明电极103类似的纵横交错电极线。在另一示例中，该第一透明电极103包括电极块的阵列，其中每个电极块连接到所述TFT阵列中与该电极块相邻的TFT单元的漏极。
进一步地，该方法还包括利用密封胶封装所述电致变色材料层、离子导电层和离子存储层的边缘，以更好地保护上述各层。
另外，可选地，在形成的第二透明电极上形成保护层(在图2中未示出)，以用于保护第二透明电极。而替代地，还可以将所述第二透明电极形成在第二透明基板上，并且将所述第二透明基板与所述第一透明基板对 盒，以形成对掩模板中的各层的更好保护。
而在本发明的另一实施例中，在将所述第二透明电极107形成在所述第二透明基板109上之前，在所述第二透明基板109上形成另一TFT阵列110，从而制成如图7所示的掩模板。
而在根据本发明的各个实施例的掩模板的实际使用中，可以将该掩模板作为固定的部件设置在LCD制造工艺中使用的紫外光固化设备中。并且，根据该固化设备所需要处理的显示面板的尺寸和点距等尺寸，确定在固化时电极中的哪些电极线需要被导通，然后根据确定的结果在实际操作中获得适用的遮光图案，对显示面板进行固化处理。而有利的是，在实际使用中，针对所需要处理的各种型号的显示面板，预先编辑相应的方案。在每个方案中，存储得到相应掩模图案的各种参数，从而实现针对实际将要处理的显示面板，而采用相应的方案进行自动处理。另外，可以根据在处理工艺中对透光率的不同要求，在相应电极线上施加不同的电压，从而得到透光率不同的透光区域。这进一步增强了本发明的实施例的掩模板的适用范围。
而应当理解的是，根据本申请的掩模板不仅仅适合用作在紫外光固化设备中的遮光板，可同样适合用作在其它各种领域中的需要改变遮光图案的遮光板。
以上描述了本申请的具体实施方式，但本申请的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本申请揭露的技术范围内，可轻易想到变化或替换，都应涵盖在本申请的保护范围之内。因此，本申请的保护范围应以所述权利要求的保护范围为准。
在本申请的描述中，需要理解的是，术语“上”、“下”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。另外，尽管在方法权利要求中以一定顺序列出了各个步骤，但是这些步骤并不一定以所列出的步骤来执行，相反在不背离本发明的精神和主旨的情况下可以以相反或并行的方式执行。措词‘包括’并不排除在权利要求未列出的元件或步骤的存在。元件前面的措词‘一’或‘一个’并不排除多个这样的元件的存在。在相互不同从属权利要求中记载某些措施的简单事 实不表明这些措施的组合不能被用于改进。在权利要求中的任何参考符号不应当被解释为限制范围。

Claims (23)

  1. 一种掩模板，包括第一透明基板，以及在所述第一透明基板上依次形成的：第一透明电极、电致变色层和第二透明电极，所述第一透明电极被配置为接受选择性的供电以形成不同形状的通电区域。
  2. 根据权利要求1所述的掩模板，其中所述掩模板还包括在所述第一透明基板和所述第一透明电极之间的用于对第一透明电极进行选择性供电的TFT阵列。
  3. 根据权利要求1所述的掩模板，其中所述第一透明电极由纵横交错的电极线的网格构成。
  4. 根据权利要求1所述的掩模板，其中所述第一透明电极由电极块的阵列构成。
  5. 根据权利要求1所述的掩模板，其中所述电致变色层具体包括电致变色材料层、离子导电层和离子存储层，并且在所述电致变色材料层、离子导电层和离子存储层的边缘处封装有密封胶。
  6. 根据权利要求1所述的掩膜版，其中在所述第二透明电极上设置有保护层。
  7. 根据权利要求1所述的掩模板，其中所述第二透明电极在第二透明基板上形成，并且通过将得到的所述第二透明基板与所述第一透明基板进行对盒，使所述第二透明电极形成在所述电致变色层和所述第二透明基板之间。
  8. 根据权利要求1-6中的任一项所述的掩模板，其中所述第二透明电极为整体的导电膜层，并且所述第二透明电极被直接镀到所述电致变色层上。
  9. 根据权利要求7所述的掩模板，其中所述第二透明电极由纵横交错的电极线的网格构成。
  10. 根据权利要求7所述的掩模板，其中所述第二透明电极由电极块的阵列构成。
  11. 根据权利要求9或10所述的掩模板，其中在所述第二透明电极和所述第二透明基板之间还形成有用于对第二透明电极进行供电的TFT阵列。
  12. 根据权利要求3或9所述的掩模板，其中在纵横交错的电极线中， 在纵电极线和横电极线相互交叉的部分之间形成有绝缘层。
  13. 根据权利要求3或9所述的掩模板，其中所述纵电极线和所述横电极线中的每条电极线均电气连接到所述TFT阵列中与该条电极线邻近的TFT单元中的漏极。
  14. 一种制作掩模板的方法，包括以下步骤：
    在第一透明基板上设置第一透明电极，所述第一透明电极被配置为接受选择性的供电以形成不同形状的通电区域；
    在所述第一透明电极上形成电致变色层；
    在所述电致变色层上设置第二透明电极。
  15. 根据权利要求14所述的方法，其中形成所述电致变色层具体包括依次形成电致变色材料层、离子导电层和离子存储层，并且所述方法还包括以下步骤：
    利用密封胶封装所述电致变色材料层、离子导电层和离子存储层的边缘。
  16. 根据权利要求14所述的方法，其中所述方法还包括以下步骤：
    在形成所述第一透明电极之前，在所述第一透明基板上设置用于对第一透明电极进行选择性供电的TFT阵列。
  17. 根据权利要求16所述的方法，其中设置第一透明电极的步骤具体包括：
    在所述TFT阵列上设置纵横交错的电极线的网格，其中每个电极线连接到所述TFT阵列中与该电极线相邻的TFT单元的漏极。
  18. 根据权利要求17所述的方法，其中，其中设置第一透明电极的步骤还包括：
    在纵横交错的电极线的相互交叉的部位之间设置绝缘层。
  19. 根据权利要求16所述的方法，其中设置第一透明电极的步骤具体包括：
    在所述TFT阵列上设置电极块的阵列，其中每个电极块连接到所述TFT阵列中与该电极块相邻的TFT单元的漏极。
  20. 根据权利要求14所述的方法，其中在所述离子存储层上设置第二透明电极的步骤具体包括：
    将所述第二透明电极形成在第二透明基板上，并且将所述第二透明基板与所述第一透明基板对盒。
  21. 根据权利要求14所述的方法，其中在所述离子存储层上设置第二透明电极的步骤具体包括：利用电镀工艺将一层导电膜层镀到所述电致变色层上。
  22. 根据权利要求1-13中的任一项所述的掩模板在显示面板的制作中的使用方法，包括以下步骤：
    针对多个不同尺寸的显示面板，预先存储用于所述掩模板的多个方案，其中每个方案被配置为使所述掩模板呈现与相应的显示面板对应的遮光图案。
  23. 一种紫外光固化设备，其包括如权利要求1-13中的任一项所述的掩模板。
PCT/CN2016/094636 2016-04-01 2016-08-11 掩模板及其制作方法、使用方法以及包括该掩模板的设备 Ceased WO2017166571A1 (zh)

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CN114675507B (zh) * 2022-04-11 2025-03-25 西湖大学 光刻装置和光刻系统
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