WO2017164672A1 - 광학 모듈 - Google Patents

광학 모듈 Download PDF

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Publication number
WO2017164672A1
WO2017164672A1 PCT/KR2017/003143 KR2017003143W WO2017164672A1 WO 2017164672 A1 WO2017164672 A1 WO 2017164672A1 KR 2017003143 W KR2017003143 W KR 2017003143W WO 2017164672 A1 WO2017164672 A1 WO 2017164672A1
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WO
WIPO (PCT)
Prior art keywords
recess
light emitting
layer
emitting diode
diameter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2017/003143
Other languages
English (en)
French (fr)
Korean (ko)
Inventor
김기현
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LG Innotek Co Ltd
Original Assignee
LG Innotek Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by LG Innotek Co Ltd filed Critical LG Innotek Co Ltd
Priority to CN201780019769.XA priority Critical patent/CN108885351B/zh
Priority to JP2018549962A priority patent/JP7289499B2/ja
Priority to US16/087,371 priority patent/US10738968B2/en
Publication of WO2017164672A1 publication Critical patent/WO2017164672A1/ko
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
    • G02B27/0916—Adapting the beam shape of a semiconductor light source such as a laser diode or an LED, e.g. for efficiently coupling into optical fibers
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V5/00—Refractors for light sources
    • F21V5/04—Refractors for light sources of lens shape
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61L—METHODS OR APPARATUS FOR STERILISING MATERIALS OR OBJECTS IN GENERAL; DISINFECTION, STERILISATION OR DEODORISATION OF AIR; CHEMICAL ASPECTS OF BANDAGES, DRESSINGS, ABSORBENT PADS OR SURGICAL ARTICLES; MATERIALS FOR BANDAGES, DRESSINGS, ABSORBENT PADS OR SURGICAL ARTICLES
    • A61L2/00—Methods or apparatus for disinfecting or sterilising materials or objects other than foodstuffs or contact lenses; Accessories therefor
    • A61L2/02—Methods or apparatus for disinfecting or sterilising materials or objects other than foodstuffs or contact lenses; Accessories therefor using physical phenomena
    • A61L2/08—Radiation
    • A61L2/10—Ultraviolet radiation
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61L—METHODS OR APPARATUS FOR STERILISING MATERIALS OR OBJECTS IN GENERAL; DISINFECTION, STERILISATION OR DEODORISATION OF AIR; CHEMICAL ASPECTS OF BANDAGES, DRESSINGS, ABSORBENT PADS OR SURGICAL ARTICLES; MATERIALS FOR BANDAGES, DRESSINGS, ABSORBENT PADS OR SURGICAL ARTICLES
    • A61L2/00—Methods or apparatus for disinfecting or sterilising materials or objects other than foodstuffs or contact lenses; Accessories therefor
    • A61L2/26—Accessories or devices or components used for biocidal treatment
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
    • G02B19/0004—Condensers, e.g. light collectors or similar non-imaging optics characterised by the optical means employed
    • G02B19/0028—Condensers, e.g. light collectors or similar non-imaging optics characterised by the optical means employed refractive and reflective surfaces, e.g. non-imaging catadioptric systems
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00—Simple or compound lenses
    • G02B3/02—Simple or compound lenses with non-spherical faces
    • G02B3/04—Simple or compound lenses with non-spherical faces with continuous faces that are rotationally symmetrical but deviate from a true sphere, e.g. so called "aspheric" lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/02208—Mountings; Housings characterised by the shape of the housings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/0231—Stems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0239—Combinations of electrical or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61L—METHODS OR APPARATUS FOR STERILISING MATERIALS OR OBJECTS IN GENERAL; DISINFECTION, STERILISATION OR DEODORISATION OF AIR; CHEMICAL ASPECTS OF BANDAGES, DRESSINGS, ABSORBENT PADS OR SURGICAL ARTICLES; MATERIALS FOR BANDAGES, DRESSINGS, ABSORBENT PADS OR SURGICAL ARTICLES
    • A61L2202/00—Aspects relating to methods or apparatus for disinfecting or sterilising materials or objects
    • A61L2202/10—Apparatus features
    • A61L2202/11—Apparatus for generating biocidal substances, e.g. vaporisers, UV lamps
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61L—METHODS OR APPARATUS FOR STERILISING MATERIALS OR OBJECTS IN GENERAL; DISINFECTION, STERILISATION OR DEODORISATION OF AIR; CHEMICAL ASPECTS OF BANDAGES, DRESSINGS, ABSORBENT PADS OR SURGICAL ARTICLES; MATERIALS FOR BANDAGES, DRESSINGS, ABSORBENT PADS OR SURGICAL ARTICLES
    • A61L9/00—Disinfection, sterilisation or deodorisation of air
    • A61L9/16—Disinfection, sterilisation or deodorisation of air using physical phenomena
    • A61L9/18—Radiation
    • A61L9/20—Ultraviolet radiation
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2115/00—Light-generating elements of semiconductor light sources
    • F21Y2115/10—Light-emitting diodes [LED]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers

Definitions

  • the embodiment provides an optical module.
  • the embodiment provides an optical module for narrow angle.
  • a light emitting diode may form a light emitting source using compound semiconductor materials such as GaAs series, AlGaAs series, GaN series, InGaN series, and InGaAlP series.
  • Such a light emitting diode is packaged and used as a light emitting device that emits various colors, and the light emitting device is used as a light source in various fields such as a lighting indicator, a color display, and an image display that display color.
  • UV LEDs ultraviolet light emitting diodes
  • an optical exposure apparatus uses an exposure apparatus that uses light in an ultraviolet region, and uses an ultraviolet LED as a light source.
  • the embodiment provides an optical module having a light emitting diode emitting an ultraviolet wavelength.
  • the embodiment provides an optical module for narrow angle having an ultraviolet light emitting diode.
  • the embodiment provides an optical module for exposure or narrow angle having a directing angle of 15 degrees or less.
  • an optical module includes a body including a concave recess and a side surface having a curved surface concave outwardly around the recess; A light emitting module having a light emitting diode under the recess of the body; And an optical lens including an incidence portion disposed on the body and a lens portion having a convex curved surface on the incidence portion, wherein the incidence portion is disposed on an upper surface of the body and the recess, and the incidence portion is the body A first region in a vertical direction overlapped with an upper surface of the first region, and a second region overlapped in a vertical direction with an upper portion of the recess along an outer circumference of the lens unit, wherein the lens unit overlaps the recess in a vertical direction, An upper portion of the recess has a maximum first diameter, a lower portion of the lens portion has a maximum second diameter, the second diameter is smaller than the first diameter, and a lower portion of the recess is smaller than the second diameter.
  • the body may include a housing in which the light emitting module is disposed and the bottom of the recess is open, and the light emitting module includes a circuit board disposed in the bottom of the housing and electrically connected to the light emitting diode.
  • the bottom center of the accommodating part may be aligned with the center of the lens part.
  • the lens portion has an aspherical shape
  • the second diameter is 80% or more of the first diameter
  • the bottom area of the second area at the incidence part is smaller than the bottom area of the first area.
  • the height of the optical lens is smaller than the depth of the recess
  • the ratio of the first diameter and the second diameter has a range of 1: 0.81 to 1: 0.91
  • the incident portion of the optical lens is flat
  • the incident angle of the light emitted from the optical lens having one incident surface may be 15 degrees or less.
  • the first light emitted from the light emitting diode is incident directly to the lens unit at a first incident angle with respect to the optical axis and is emitted at the first exit angle through the lens unit
  • the second light emitted from the light emitting diode Is reflected at the side of the recess at a second incident angle with respect to the optical axis and exits at a second exit angle through the incidence portion disposed outside the lens unit
  • the first incident angle is 35 degrees or less with respect to the optical axis
  • the second incident angle is greater than 35 degrees with respect to the optical axis
  • the first and second emission angles may include 15 degrees or less with respect to the optical axis or the vertical axis.
  • the first light emitted from the light emitting diode is incident directly to the lens unit at a first incident angle with respect to the optical axis and is emitted at the first exit angle through the lens unit
  • the second light emitted from the light emitting diode Is reflected at the side of the recess at a second incident angle with respect to the optical axis and exits at a second exit angle through the incidence portion disposed outside the lens unit, and the ratio of the first incident angle and the first exit angle is 1.7.
  • the ratio between the second incident angle and the second exit angle may be 0.375 or less.
  • the body may include a ceramic material or an aluminum material, and the recess may have a circular top view shape, and the diameter of the recess may be gradually smaller as it is closer to the light emitting diode.
  • the curved surface of the recess may have a radius of curvature of 1.5 mm or less
  • the lower surface of the incidence portion may include a flat horizontal surface
  • the lower surface area of the incidence portion may be larger than the upper surface area of the recess.
  • the light emitting diode emits light having an ultraviolet wavelength
  • the recess has a circular top view shape, and the diameter of the recess decreases gradually as it is adjacent to the light emitting diode, and is emitted from the optical lens.
  • the directed angle of the light may be 15 degrees or less.
  • the light emitting diode emits light having an ultraviolet wavelength
  • the recess has a circular top view shape, and the diameter of the recess decreases gradually as it is adjacent to the light emitting diode.
  • the circuit board may include a ceramic material, the width of the circuit board may be smaller than the width of the receiving portion.
  • the embodiment can provide a narrow angle of 15 degrees or less for the optical directivity angle of the optical module.
  • the embodiment can improve the reliability of the optical device for exposure.
  • the embodiment can reduce the number of ultraviolet light emitting diodes disposed in the optical module.
  • the embodiment can improve the reliability in the exposure apparatus by providing an optical module for exposure having a narrower angle than the Lambertian light distribution.
  • FIG. 1 is a perspective view of a light emitting module according to an embodiment.
  • FIG. 2 is a side view of the coupling of the optical module of FIG.
  • FIG. 3 is a plan view of the optical module of FIG. 2.
  • FIG. 4 is a cross-sectional view taken along the A-A side of the optical module of FIG.
  • FIG. 5 is a view for explaining the structure of the recess and the optical lens of the body in the optical module of FIG.
  • FIG. 6 is a diagram for describing an optical path in the optical module of FIG. 4.
  • FIG. 7 is a detailed configuration diagram of a light emitting diode of the optical module according to the embodiment.
  • FIG. 8 is another configuration diagram of a light emitting diode of the optical module according to the embodiment.
  • FIG. 9 is a diagram illustrating a direction angle distribution of light emitted from an optical module according to an embodiment.
  • FIG. 1 is a perspective view of a light emitting module according to an embodiment
  • FIG. 2 is a side view of the coupling of the optical module of FIG. 1
  • FIG. 3 is a plan view of the optical module of FIG. 2
  • FIG. 4 is a cross-sectional view at the AA side of the optical module of FIG. 3.
  • 5 is a view for explaining the recess of the reflector and the structure of the optical lens in the optical module of Figure 4
  • Figure 6 is a view for explaining the optical path in the optical module of FIG.
  • the optical module 100 includes a body 110 having a recess 111, a light emitting module 130 disposed on the bottom of the recess 111, and the body 110. And an optical lens 160 disposed thereon.
  • the body 110 may be a reflector made of a reflective material.
  • the body 110 may be formed of a metal material, for example, aluminum.
  • the body 110 may be metal or may be plated with aluminum on its surface.
  • the body 110 may be formed of a material that is 100% aluminum.
  • the body 110 may optionally include a metal, for example, aluminum (Al), platinum (Pt), titanium (Ti), copper (Cu), nickel (Ni), gold (Au), and tantalum (Ta). It may be formed in a single layer or multiple layers.
  • the body 110 may be formed of a metal having a reflectance of 80% or more of the wavelength emitted from the light emitting module 130.
  • the body 110 may include an insulating material or a conductive material.
  • the body 110 may include a ceramic material, and a metal layer, for example, an aluminum material may be formed on the side surface 116 of the recess 111.
  • the top view shape of the body 110 may be a polygonal shape, for example, a rectangular shape, and may be a circular shape as another example.
  • the body 110 may have a polyhedron shape, but is not limited thereto.
  • the body 110 may be equal to or different from each other in length or length X1 at the top surface 112 or the bottom surface 113, but is not limited thereto.
  • the area of the bottom surface 113 of the body 110 may be equal to or larger than the area of the top surface 112.
  • the height T1 of the body 110 may be smaller than the horizontal length X1 of the body 110.
  • the body 110 has a recess 111 having an open upper portion and an accommodating portion 121 disposed below the recess 111, and the light emitting module 130 is disposed at the accommodating portion 121. Is placed.
  • the recess 111 is recessed to a predetermined depth from the upper surface 112 of the body 110 and is connected to the accommodating part 121, and the accommodating part 121 has an open lower portion of the body 110. It may be an open area.
  • the recess 111 may be formed in a shape that gradually narrows downward, for example, a hemispherical shape or a container shape.
  • the recess 111 may be formed in a rotationally symmetrical shape or an axial symmetrical shape with respect to the optical axis perpendicular to the bottom center.
  • the recess 111 may be an empty space.
  • the recess 111 may have a circular shape having an upper shape having a maximum first diameter X4, and the bottom shape may have a polygonal shape or a circular shape.
  • the recess 111 may have a shape in which the diameter gradually decreases downward, and may be connected to the accommodating part 121 at a lower end of the recess 111.
  • the side surface 116 of the recess 111 may be a reflective surface, and the reflective surface may be formed of a metal reflective material different from the body 110, or may be formed of a material of the body 110.
  • the side surface 116 of the recess 111 may include a curved surface that is concave outward, and the curved surface may be a surface that is concave outward than a straight line connecting the upper and lower ends of the recess 111.
  • the curved surface may be formed in a parabolic shape or a quadratic curve shape between the top and bottom of the recess 111.
  • the upper end of the recess 111 may be a boundary point with the upper end of the body 110, and the lower end may be a boundary point with the accommodating part 121.
  • the radius of curvature may be in the range of 1.5 mm or less, for example, 1.2 mm to 1.5 mm, and the light reflection efficiency may be deteriorated when it is out of the radius of curvature.
  • a diameter of the recess 111 may gradually decrease as it contacts the light emitting diode 133.
  • the depth D1 of the recess 111 may be greater than the height H1 of the optical lens 160.
  • the depth D1 may be 1.4 times or more, for example 1.4 times to 1.8 times the height H1. It can be a range.
  • the depth D1 may be in the range of 3.5 mm or more, for example, 3.5 mm to 4.2 mm.
  • the recess 111 having the depth D1 can diffuse the light sufficiently.
  • a lower surface area of the incident part 161 of the optical lens 160 may be larger than an upper surface area of the recess 111.
  • the accommodating part 121 may have a top view shape having a polygonal shape or a circular shape, and may have a predetermined height D2 from the bottom surface 113 of the body 110.
  • the width D3 of the accommodating part 121 may be in the range of 1.8 mm to 2.5 mm, and this range may be changed according to the width D4 of the light emitting diode 133.
  • the height D2 of the accommodating part 121 is greater than the thickness of the light emitting module 130, and an upper end of the accommodating part 121 or a boundary point with the recess 116 is formed of the light emitting diode 133. It may be disposed above the top surface.
  • An upper surface of the light emitting diode 133 may be lower than a straight line connecting the lower end of the concave curved surface of the recess 111.
  • the accommodating part 121 may vary according to the size of the light emitting module 130, and the light emitted from the light emitting module 130 may not be lost in the accommodating part 121. It may be formed such that light may be reflected through the side surface 116.
  • the light emitting module 130 includes a circuit board 131 and a light emitting diode 133 on the circuit board 131.
  • the circuit board 131 may include a resin substrate, a ceramic substrate, or a metal base substrate.
  • the circuit board 131 may be a rigid board or a flexible board.
  • the circuit board 131 may have a circuit pattern and supply power to the light emitting diode 133.
  • the width of the circuit board 131 may be equal to or less than the width of the accommodating part 121. When the width of the circuit board 131 is less than or equal to the width of the accommodating part 121, the circuit board 121 may be in close contact with the sidewall of the accommodating part 121.
  • the circuit board 121 When the width of the circuit board 121 is larger than the width of the accommodating part 121, the circuit board 121 may extend from the bottom of the accommodating part 121 to the lower surface of the body 110.
  • the bottom surface of the circuit board 131 may be disposed in the same horizontal plane as the bottom surface of the body 110.
  • the light emitting diode 133 may include an optional peak wavelength within a range of ultraviolet to visible wavelengths.
  • the light emitting diode 133 may emit, for example, an ultraviolet wavelength, and may be applied to an exposure apparatus or a sterilizing or curing apparatus.
  • the light emitting diode 133 may be formed of a compound semiconductor of group II and group VI elements, or a compound semiconductor of group III and group V elements.
  • the light emitting diode 133 is an ultraviolet LED chip, and may be an LED chip having a wavelength in a range of 100 nm to 400 nm.
  • it may optionally include a semiconductor device manufactured using a compound semiconductor of a series such as AlInGaN, InGaN, AlGaN, GaN, GaAs, InGaP, AllnGaP, InP, InGaAs.
  • the light emitting diode 133 may include an n-type semiconductor layer, a p-type semiconductor layer, and an active layer, and the active layer may be InGaN / GaN, InGaN / AlGaN, InGaN / InGaN, GaN / AlGaN, InAlGaN / InAlGaN, AlGaAs / GaAs, InGaAs / GaAs, InGaP / GaP, AlInGaP / InGaP, and InP / GaAs can be implemented in pairs.
  • the light emitting diode 133 may be a horizontal chip or a vertical chip.
  • the light emitting diode 133 may be disposed on the circuit board 131 and electrically connected to a connection member such as a wire. It does not limit to this.
  • the thickness T3 of the light emitting diode 133 may range from 0.13 mm ⁇ 0.03 mm.
  • the width D4 of the light emitting diode 133 may be 1.3 mm ⁇ 0.4 mm as the length of one side, but is not limited thereto.
  • the light emitting diode 133 may have a distance G3 from the sidewall of the accommodating part 121 to be less than 0.5 mm, for example, 0.32 mm to 0.42 mm.
  • the light emitting diode 133 is spaced apart from the light emitting diode 133 by the sidewall of the accommodating part 121 at the interval G3, so that the light emitted from the light emitting diode 133 is reflected and re-reflected by the sidewall of the accommodating part 121.
  • the directivity angle of the light emitting diode 133 may be 110 degrees or more, for example, 110 to 130 degrees, and the width D3 of the accommodating part 121 may vary according to the distribution of the directivity angle of the light emitting diode 133. But it is not limited thereto.
  • the optical lens 160 is disposed on the body 110 and is refracted to emit light emitted from the light emitting diode 133.
  • the optical lens 160 may be attached to an upper surface of the body 110 with an adhesive (not shown).
  • the optical lens 160 may be formed as a flat horizontal plane or an upwardly convex surface.
  • the optical lens 160 may include a lens shape in which an emission surface is convex, and the convex lens shape may emit light by refracting incident light incident on the incident surface.
  • the optical lens 160 may have a thickness H1 smaller than the height T1 of the body 110, and may have a thickness of 3 mm or less, for example, in a range of 2 mm to 3 mm.
  • the horizontal and vertical lengths X2 of the optical lens 160 may be the same or different from each other, and may be the same or different from the horizontal and vertical lengths X1 of the body 110.
  • the horizontal and vertical lengths X2 of the optical lens 160 may be disposed in a range of 8 mm or less, for example, 6.5 mm to 8 mm, and may vary according to the size of the body 110.
  • the optical lens 160 may be formed of a transparent material, for example, a glass material.
  • the optical lens 160 may be formed of, for example, a borosilicate glass material.
  • the optical lens 160 includes an incident part 161 and a lens part 165 on the incident part 161.
  • the incidence part 161 is disposed on the upper surface 112 of the body 110, and the lens part 165 has a lens shape protruding convexly from the incidence part 161.
  • the incident part 161 is a flange and is disposed at a thickness T2 of 30% or less, for example, 10% to 30% of the thickness H1 of the optical lens 160 to transmit incident light. And support the optical lens 160 on the body 110.
  • the lower surface of the incident part 161 may include a flat incident surface.
  • the incident part 161 may have a first region (A1 of FIG. 3) overlapping with an upper surface of the body 110 in a vertical direction, and an upper portion of the recess 111 along an outer circumference of the lens unit 165. And a second region (A2 of FIG. 3) overlapping with each other in the vertical direction.
  • an area of a lower surface of the second area A2 may be smaller than an area of the lower surface of the first area A1. This may support the optical lens 160 through the first area A1 and adjust the amount of leakage light traveling through a path other than the lens unit 165 through the second area A2.
  • the lens unit 165 of the optical lens 160 may be formed in a convex lens shape which is convex upward from the incidence part 161, and a surface thereof may be formed in a curved or aspherical shape.
  • the center of the lens unit 165 may be aligned with the bottom center of the recess 111.
  • the thickness H2 of the lens unit 165 may have a range of 70% to 90% of the thickness H1 of the optical lens 160, and the radius of curvature may be 2 mm or less, for example, 1.80 mm to 2 mm. Can be.
  • the thickness H2 and the radius of curvature of the lens unit 165 may vary depending on the size of the light emitting diode 133.
  • the lens unit 165 may have a second diameter X3 which is a maximum diameter of the lower portion.
  • the second diameter X3 may be smaller than the first diameter X4, and may have a range of less than 6 mm, for example, 5.32 mm to 5.42 mm.
  • the second diameter X3 of the lens unit 165 is smaller than the range, the directivity angle of the light emitted through the incidence unit 161 disposed around the outer side of the lens unit 165 may be increased, and the range If larger, light loss may occur due to total reflection in the lens unit 165.
  • the second diameter X3 may be smaller than the first diameter X3 and 80% or more.
  • the ratio of the first diameter (X4) and the second diameter (X3) may have a range of 1: 0.81 to 1: 0.91, the difference between the first diameter (X4) and the second diameter (X3) is 0.7mm Greater than less than 1 mm, for example, from 0.76 mm to 0.86 mm.
  • the second diameter X3 may be smaller than the first diameter and larger than the third diameter D3.
  • the fourth diameter may be smaller than the second diameter X3.
  • the lower area (except for the incident part) of the lens unit 165 may be smaller than the upper surface area of the recess 111.
  • the optical lens 160 is incident on the lens unit 165 by the difference G1 between the first and second diameters X4 and X3 and is emitted to the lens unit 165 and the reflection incident to the outside of the incident unit 161.
  • the light may have a direction angle distribution for narrow angles.
  • the lens unit 165 and the incidence unit 161 may be provided in a direction angle distribution of 15 degrees or less using incident light.
  • the optical lens 160 may emit light having a directivity angle in a range of 10% to 14% relative to the directivity angle of the light emitting diode 133. As shown in FIG.
  • the optical module 100 may provide a light directivity angle distribution of 15 degrees or less.
  • the optical module having such a direct angle distribution may be applied to a device for condensing a specific region, for example, an exposure apparatus.
  • the number of light emitting diodes 133 under the recess 111 may be reduced in the optical module.
  • the bottom center Pc of the light emitting diode 133 may be aligned with the vertex P1 of the lens unit 165 of the optical lens 160 on the optical axis Z0.
  • the bottom center Pc of the light emitting diode 133 may be the top center of the circuit board 131.
  • a straight line connecting the bottom center Pc of the light emitting diode 133 and the upper end P2 of the side surface 116 of the recess 111 is a first angle E2 based on the optical axis Z0.
  • the straight line connecting the bottom center Pc of the light emitting diode 133 and the outer bottom P4 of the lens unit 165 of the optical lens 160 may be the second angle E1 based on the optical axis Z0. have.
  • the second angle E2 may be larger than the first angle E1 and may emit some light through a region between the first and second angles E1 and E2.
  • the difference between the first and second angles E1 and E2 may be in the range of 7.3 ⁇ 0.7 degrees.
  • the first angle E1 may be disposed at an angle of 35 degrees or less, for example, 31 degrees to 35 degrees.
  • the distance D11 from the bottom center Pc of the light emitting diode 133 or the upper surface of the circuit board 131 to the incident surface of the optical lens 160 is equal to the first diameter of the recess 111.
  • the radius D12 may be greater than the radius D12, and the radius D12 of the first diameter may be greater than the thickness H1 of the optical lens 160.
  • the ratio of the radius D12 of the first diameter and the radius D12 of the lens unit 165 may have a ratio of 1: 0.81 to 1: 0.91.
  • the lens unit 165 is controlled by controlling the path of the reflected light and the transmitted light by the ratio difference between the size of the incident surface of the optical lens 160, the lower diameter of the lens unit 165, and the upper diameter of the recess 111.
  • the distribution of light propagating to the surface of) may have a narrow directivity angle.
  • the straight line connecting the high point P1 of the optical lens 160 and the outer low point P4 of the lens unit 165 has a third angle E3 based on the optical axis Z0, and the optical lens 160
  • the straight line connecting the high point (P1) and the upper end side P2 of the recess 111 may be disposed at a fourth angle (E4) with respect to the optical axis (Z0).
  • the third angle E3 may be larger than the fourth angle E4, and the difference between the third and fourth angles E3 and E4 may be 2 degrees or more, for example, in a range of 2 degrees to 4 degrees, and such a difference.
  • the light incident on the lens unit 165 and the light not incident may be distinguished from each other.
  • the third angle E3 may be in the range of 50 to 52 degrees.
  • the ratio of the third and fourth angles E3 and E4 may be in a range of 1.02: 1 or more, for example, 1.02: 1 to 1.2: 1.
  • the third angle E3 may vary depending on the size of the recess 111 and the radius of curvature of the lens unit 165.
  • the optical lens 160 may refract light incident to the lens unit 165 through the recess 111 to provide a light distribution having a direct angle of about 15 degrees or less.
  • the optical lens 160 may emit light having a light intensity transmitted through the outer incidence portion 161 of the lens unit 165 to 15 degrees or less, thereby providing a directivity of 15 degrees or less.
  • the lens unit 165 of the optical lens 160 has first incident angles R1 and R2 with respect to the optical axis Z0 among the light emitted from the light emitting diode 133.
  • Light L1 and L2 proceeding directly to the first and second light beams L1 and L2 are refracted by the lens unit 165 and are emitted at first emission angles R5 and R6 of 15 degrees or less with respect to the vertical axis Z.
  • the first incident angles R1 and R2 are angles between the light beams L1 and L2 emitted from the top center P0 of the light emitting diode 133 and the optical axis Z0.
  • the maximum angles of the first incident angles R1 and R2 may be angles at which light emitted from the light emitting diodes 133 is incident to the outer bottom points P4 and P5 of the lens unit 165.
  • the maximum angles of the first incident angles R1 and R2 may be emitted at an angle of 35 degrees or less based on the optical axis Z0.
  • a ratio between the first incidence angles R5 and R6 and the first incidence angles R1 and R2 (R5 / R1 and R6 / R2). ) May be emitted to the lens unit 165 having a ratio of 1.7 or less.
  • the ratios R5 / R1 and R6 / R2 of the first emission angles R5 and R6 and the first incident angles R1 and R2 exceed the above range, there is a problem in that the directivity angle is greater than 15 degrees.
  • the partial light L3 and L4 traveling to the side surface 116 of the recess 111 at the second incident angles R3 and R4 based on the optical axis Z0 may be generated. It is reflected from the side surface 116 of the recess 111 and exits between the upper side surfaces P2 and P3 of the recess 111 and the outer point P4 of the lens unit 165. In this case, the second incident angles R3 and R4 proceed at an angle exceeding 35 degrees with respect to the optical axis Z0.
  • the light L3 and L4 emitted at the second incident angles R3 and R4 are refracted through the incident part 161 to be emitted at the second exit angles R7 and R8, and the second exit angles R7 and R4 are emitted.
  • R8 proceeds to 15 degrees or less with respect to the vertical axis Z.
  • the second incident angles R3 and R4 are angles between the light beams L3 and L4 emitted from the upper center P0 of the light emitting diode 133 and the optical axis Z0.
  • the light (L3, L4) emitted to the outer incidence portion 161 of the lens unit 165 of the optical lens 160 has a second incident angle (R3, R4) of more than 35 degrees relative to the optical axis (Z0) It may have a second emission angle (R7, R8) of 15 degrees or less with respect to the vertical axis (Z).
  • the second emission angles R7 and R8 and the second angle are formed.
  • the ratios R7 / R3 and R8 / R4 of the two incident angles R3 and R4 may be 0.375 or less. If the ratio (R7 / R3, R8 / R4) of the second exit angle (R7, R8) and the second incident angle (R3, R4) exceeds the above range, there is a problem that the orientation angle exceeds 15 degrees.
  • light outside the direction angle for example, light exceeding 65 degrees (for example, when the direction angle is 130 degrees) with respect to the optical axis Z0, is outside the direction angle distribution of the light.
  • the effect on light distribution can be minimal.
  • the light L1 and L2 of 35 degrees or less with respect to the optical axis Z0 proceed to the lens unit 165 of the optical lens 160. In the section of 60 degrees or less, it is emitted to the outside through the incident part 161 of the optical lens 160.
  • the optical module 100 receives the first light L1 and L2 and the second incident angle R3 and R4 that are directly incident from the light emitting module 130 to the lens unit 165 at the first incident angle R1 and R2. And the light L3 and L4 reflected by the side surface 116 of the recess 111 and emitted to the incidence portion 161, the narrow angle module as shown in FIG. 9 can be provided as a narrow angle module. have.
  • FIG. 7 is a diagram illustrating an example of a light emitting diode according to an embodiment.
  • the light emitting diode includes a light emitting structure 10 having a plurality of semiconductor layers 11, 12, and 13, a first electrode layer 20 and a first electrode layer 20 under the light emitting structure 10.
  • a second electrode layer 50, an insulating layer 41, and a pad 25 may be included between the first and second electrode layers 20 and 50.
  • the light emitting structure 10 may include a first semiconductor layer 11, an active layer 12, and a second semiconductor layer 13.
  • the active layer 12 may be disposed between the first semiconductor layer 11 and the second semiconductor layer 13.
  • the active layer 12 may be disposed under the first semiconductor layer 11, and the second semiconductor layer 13 may be disposed under the active layer 12.
  • the first semiconductor layer 11 may include an n-type semiconductor layer to which a first conductive dopant, for example, an n-type dopant is added
  • the second semiconductor layer 13 may include a second conductive dopant, for example, p. It may include a p-type semiconductor layer to which a type dopant is added.
  • the first semiconductor layer 11 may be formed of a p-type semiconductor layer
  • the second semiconductor layer 13 may be formed of an n-type semiconductor layer.
  • the light emitting structure 10 may be selectively formed from a compound semiconductor of Group II to Group V elements and Group III to Group V elements, and may emit a predetermined peak wavelength within a wavelength range of the ultraviolet band to the visible light band. For example, ultraviolet light can be emitted.
  • the light emitting structure 10 includes a first semiconductor layer 11, a second semiconductor layer 13, and an active layer 12 formed between the first semiconductor layer 11 and the second semiconductor layer 13.
  • another semiconductor layer may be further disposed on at least one of the upper and lower portions of each of the layers 11, 12, and 13, but is not limited thereto.
  • the first semiconductor layer 11 comprises a composition formula of In x Al y Ga 1 -x- y N (0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 1, 0 ⁇ x + y ⁇ 1).
  • the first semiconductor layer 11 may be selected from compound semiconductors of group III-V elements, such as GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, and AlGaInP.
  • the first conductive dopant is an n-type dopant and includes a dopant such as Si, Ge, Sn, Se, Te, or the like.
  • the active layer 12 is disposed below the first semiconductor layer 11, and optionally includes a single quantum well, a multiple quantum well (MQW), a quantum wire structure or a quantum dot structure. Cycles of well and barrier layers.
  • the period of the well layer / barrier layer is, for example, InGaN / GaN, GaN / AlGaN, AlGaN / AlGaN, InGaN / AlGaN, InGaN / InGaN, AlGaAs / GaA, InGaAs / GaAs, InGaP / GaP, AlInGaP / InGaP, InP / GaAs At least one of the pairs.
  • the second semiconductor layer 13 is disposed below the active layer 12.
  • the second semiconductor layer 13 is a second conductive type dopant is doped semiconductor, for example, In x Al y Ga 1 -x- y N (0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 1, 0 ⁇ x + y ⁇
  • the composition formula of 1) is included.
  • the second semiconductor layer 13 may be formed of at least one of compound semiconductors such as GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, and AlGaInP.
  • the second semiconductor layer 119 is a p-type semiconductor layer, and may include Mg, Zn, Ca, Sr, and Ba as a p-type dopant.
  • An upper surface of the first semiconductor layer 11 may be formed of a rough uneven portion 11A, and the uneven surface 11A may improve light extraction efficiency.
  • the side cross section of the uneven surface 11A may include a polygonal shape or a hemispherical shape.
  • the first electrode layer 20 is disposed between the light emitting structure 10 and the second electrode layer 50, is electrically connected to the second semiconductor layer 13 of the light emitting structure 10, and the second electrode layer. Electrically insulated with 50.
  • the first electrode layer 20 includes a first contact layer 15, a reflective layer 17, and a capping layer 19, and the first contact layer 15 includes the reflective layer 17 and a second semiconductor layer ( 13, and the reflective layer 17 is disposed between the first contact layer 15 and the capping layer 19.
  • the first contact layer 15, the reflective layer 17, and the capping layer 19 may be formed of different conductive materials, but are not limited thereto.
  • the first contact layer 15 may be in contact with the second semiconductor layer 13, for example, to form an ohmic contact with the second semiconductor layer 13.
  • the first contact layer 15 may be formed of, for example, a conductive oxide film, a conductive nitride, or a metal.
  • the first contact layer 15 may include, for example, indium tin oxide (ITO), indium zinc oxide (ITO), indium zinc oxide (IZO), indium zinc oxide (IZON), aluminum zinc oxide (AZO), and aluminum gallium zinc oxide (AZZO).
  • IZTO Indium Zinc Tin Oxide
  • IAZO Indium Aluminum Zinc Oxide
  • IGZO Indium Gallium Zinc Oxide
  • IGTO Indium Gallium Tin Oxide
  • ATO Antimony Tin Oxide
  • GZO Gallium Zinc Oxide
  • IZON IZO Nitride
  • ZnO, IrOx, RuOx, NiO, Pt, Ag, Ti may be formed of at least one.
  • the reflective layer 17 may be electrically connected to the first contact layer 15 and the capping layer 19.
  • the reflective layer 17 may function to increase the amount of light extracted to the outside by reflecting light incident from the light emitting structure 10.
  • the reflective layer 17 may be formed of a metal having a light reflectance of 70% or more.
  • the reflective layer 17 may be formed of a metal or an alloy including at least one of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Cu, Au, and Hf.
  • the reflective layer 17 may be formed of indium-tin-oxide (ITO), indium-zinc-oxide (IZO), indium-zinc-tin-oxide (IZTO), and indium-aluminum-zinc- (AZO).
  • Transmissive conductive materials such as Oxide), Indium-Gallium-Zinc-Oxide (IGZO), Indium-Gallium-Tin-Oxide (IGTO), Aluminum-Zinc-Oxide (AZO), and Antimony-Tin-Oxide (ATO) It can be formed in multiple layers.
  • Oxide Indium-Gallium-Zinc-Oxide
  • IGTO Indium-Gallium-Tin-Oxide
  • AZO Aluminum-Zinc-Oxide
  • ATO Antimony-Tin-Oxide
  • the reflective layer 17 may include at least one of Ag, Al, Ag-Pd-Cu alloy, or Ag-Cu alloy.
  • the reflective layer 17 may be formed by alternately forming an Ag layer and a Ni layer, and may include a Ni / Ag / Ni, Ti layer, or Pt layer.
  • the first contact layer 15 may be formed below the reflective layer 17, and at least a portion thereof may pass through the reflective layer 17 to be in contact with the second semiconductor layer 13.
  • the reflective layer 17 may be disposed under the first contact layer 15, and a portion of the reflective layer 17 may contact the second semiconductor layer 13 by passing through the first contact layer 15. .
  • the light emitting diode may include a capping layer 19 disposed under the reflective layer 17.
  • the capping layer 19 is in contact with the lower surface of the reflective layer 17, the contact portion 34 is coupled to the pad 25, and serves as a wiring layer for transferring power supplied from the pad 25.
  • the capping layer 19 may be formed of a metal, and may include at least one of Au, Cu, Ni, Ti, Ti-W, Cr, W, Pt, V, Fe, and Mo materials.
  • the contact portion 34 of the capping layer 19 is disposed in an area that does not overlap with the light emitting structure 10 in the vertical direction, and vertically overlaps the pad 25.
  • the contact portion 34 of the capping layer 19 is disposed in an area which does not overlap in the vertical direction with the first contact layer 15 and the reflective layer 17.
  • the contact portion 34 of the capping layer 19 may be disposed at a lower position than the light emitting structure 10 and may be in direct contact with the pad 25.
  • the pad 25 may be formed in a single layer or a multilayer, and the single layer may be Au, and in the case of the multilayer, the pad 25 may include at least two of Ti, Ag, Cu, and Au.
  • the multilayer structure may be a stacked structure of Ti / Ag / Cu / Au or a Ti / Cu / Au stacked structure. At least one of the reflective layer 17 and the first contact layer 15 may directly contact the pad 25, but is not limited thereto.
  • the pad 25 may be disposed in an area between the outer sidewall of the first electrode layer 20 and the light emitting structure 10.
  • the protective layer 30 and the light transmitting layer 45 may be in contact with the circumference of the pad 25.
  • the protective layer 30 may be disposed on the bottom surface of the light emitting structure 10, may be in contact with the bottom surface of the second semiconductor layer 13 and the first contact layer 15, and may be in contact with the reflective layer 17. Can be.
  • An inner part of the protective layer 30 overlapping the light emitting structure 10 in the vertical direction may be disposed to overlap the area of the protrusion 16 in the vertical direction.
  • the outer portion of the protective layer 30 extends over the contact portion 34 of the capping layer 19 and is disposed to overlap the contact portion 34 in a vertical direction.
  • the outer portion of the protective layer 30 may be in contact with the pad 25, for example, may be disposed on the circumferential surface of the pad 25.
  • the inner portion of the protective layer 30 is disposed between the light emitting structure 10 and the first electrode layer 20, and the outer portion is disposed between the light transmitting layer 45 and the contact portion 34 of the capping layer 19. Can be.
  • the outer portion of the protective layer 30 may extend to an outer region of the sidewall of the light emitting structure 10 to prevent moisture from penetrating.
  • the protective layer 30 may be defined as a channel layer, a low refractive material, or an isolation layer.
  • the protective layer 30 may be formed of an insulating material, for example, oxide or nitride.
  • the protective layer 30 is at least one in the group consisting of SiO 2 , Si x O y , Si 3 N 4 , Si x N y , SiO x N y , Al 2 O 3 , TiO 2 , AlN, and the like. Can be selected and formed.
  • the protective layer 30 may be formed of a transparent material.
  • the light emitting diode may include an insulating layer 41 which electrically insulates the first electrode layer 20 from the second electrode layer 50.
  • the insulating layer 41 may be disposed between the first electrode layer 20 and the second electrode layer 50. An upper portion of the insulating layer 41 may contact the protective layer 30.
  • the insulating layer 41 may be formed of, for example, oxide or nitride.
  • the insulating layer 41 is at least one of a group consisting of SiO 2 , Si x O y , Si 3 N 4 , Si x N y , SiO x N y , Al 2 O 3 , TiO 2 , AlN, and the like. Can be selected and formed.
  • the insulating layer 41 may be formed to a thickness of 100 nanometers to 2000 nanometers. If the thickness of the insulating layer 41 is formed to be less than 100 nanometers may cause a problem in the insulating properties, if the thickness of the insulating layer 41 is formed in more than 2000 nanometers are broken in a later process step This can be caused.
  • the insulating layer 41 is in contact with the lower surface of the first electrode layer 20 and the upper surface of the second electrode layer 50, and the protective layer 30, the capping layer 19, the contact layer 15, and the reflective layer (17) It may be formed thicker than each thickness.
  • the second electrode layer 50 is a diffusion barrier layer 52 disposed below the insulating layer 41, a bonding layer 54 disposed below the diffusion barrier layer 52 and a bonding layer 54 disposed below the diffusion layer 52. It may include a conductive support member 56, it may be electrically connected to the first semiconductor layer (11). In addition, the second electrode layer 50 may optionally include one or two of the diffusion barrier layer 52, the bonding layer 54, and the conductive support member 56, and the diffusion barrier layer 52 or At least one of the bonding layers 54 may not be formed.
  • the diffusion barrier layer 52 may include at least one of Cu, Ni, Ti, Ti-W, Cr, W, Pt, V, Fe, and Mo materials.
  • the diffusion barrier layer 52 may function as a diffusion barrier layer between the insulating layer 41 and the bonding layer 54.
  • the diffusion barrier layer 52 may be electrically connected to the bonding layer 54 and the conductive support member 56, and may be electrically connected to the first semiconductor layer 11.
  • the diffusion barrier layer 52 may function to prevent the material included in the bonding layer 54 from diffusing in the direction of the reflective layer 17 in the process of providing the bonding layer 54.
  • the diffusion barrier layer 52 may prevent a material such as tin (Sn) included in the bonding layer 54 from affecting the reflective layer 17.
  • the bonding layer 54 may include a barrier metal or a bonding metal, and for example, at least one of Ti, Au, Sn, Ni, Cr, Ga, In, Bi, Cu, Ag, Nb, Pd, or Ta. It may include.
  • the conductive support member 56 may support the light emitting structure 10 according to the embodiment and perform a heat dissipation function.
  • the bonding layer 54 may include a seed layer.
  • the conductive support member 56 may be a metal or carrier substrate, for example Ti, Cr, Ni, Al, Pt, Au, W, Cu, Mo, Cu-W, or a semiconductor substrate in which impurities are implanted (eg, Si, Ge , GaN, GaAs, ZnO, SiC, SiGe, etc.).
  • the conductive support member 56 is a layer for supporting the light emitting diode, and the thickness thereof is 80% or more of the thickness of the second electrode layer 50, and may be formed to be 30 ⁇ m or more.
  • the second contact layer 33 is disposed in the first semiconductor layer 11 and is in contact with the first semiconductor layer 11.
  • An upper surface of the second contact layer 33 may be disposed above the lower surface of the first semiconductor layer 11, electrically connected to the first semiconductor layer 11, and the active layer 12 and the second semiconductor. It is insulated from the layer 13.
  • the second contact layer 33 may be electrically connected to the second electrode layer 50.
  • the second contact layer 33 may be disposed through the first electrode layer 20, the active layer 12, and the second semiconductor layer 15.
  • the second contact layer 33 is disposed in a recess 2 disposed in the light emitting structure 10, and is formed in the active layer 12, the second semiconductor layer 15, and the protective layer 30. Insulated by The plurality of second contact layers 33 may be disposed spaced apart from each other.
  • the second contact layer 33 may be connected to the protrusion 51 of the second electrode layer 50, and the protrusion 51 may protrude from the diffusion barrier layer 52.
  • the protrusion 51 may pass through the hole 41A disposed in the insulating layer 41 and the protective layer 30, and may be insulated from the first electrode layer 20.
  • the second contact layer 33 may include at least one of Cr, V, W, Ti, Zn, Ni, Cu, Al, Au, and Mo.
  • the protrusion 501 may include at least one of materials forming the diffusion barrier layer 52 and the bonding layer 54, but is not limited thereto.
  • the protrusion 51 may include at least one of Ti, Au, Sn, Ni, Cr, Ga, In, Bi, Cu, Ag, Nb, Pd, or Ta.
  • the pad 25 may be electrically connected to the first electrode layer 20 and may be exposed to a region outside the sidewall of the light emitting structure 10.
  • One or more pads 25 may be disposed.
  • the pad 25 may include at least one of Cu, Ni, Ti, Ti-W, Cr, W, Pt, V, Fe, and Mo materials.
  • the light transmitting layer 45 may protect the surface of the light emitting structure 10, may insulate the pad 91 from the light emitting structure 10, and may contact the peripheral portion of the protective layer 30. have.
  • the light transmission layer 45 may have a lower refractive index than the material of the semiconductor layer constituting the light emitting structure 10, and may improve light extraction efficiency.
  • the light transmitting layer 45 may be formed of, for example, oxide or nitride.
  • the light-transmitting layer 45 is at least one in the group consisting of Si0 2 , Si x O y , Si 3 N 4 , Si x N y , SiO x N y , Al 2 O 3 , TiO 2 , AlN, etc. Can be selected and formed.
  • the light transmission layer 45 may be omitted depending on the design.
  • the light emitting structure 10 may be driven by the first electrode layer 20 and the second electrode layer 50.
  • the light emitting diode includes a substrate 311, a first semiconductor layer 312, a light emitting structure 310, an electrode layer 331, an insulating layer 333, a first electrode 335, and a second electrode ( 337).
  • the substrate 311 may be a light transmissive, insulating or conductive substrate, for example, sapphire (Al 2 O 3 ), SiC, Si, GaAs, GaN, ZnO, Si, GaP, InP, Ge, Ga 2 O 3 At least one may be used. A plurality of convex portions (not shown) may be formed on the top surface of the substrate 311 to improve light extraction efficiency.
  • the substrate 311 may be removed, and in this case, the first semiconductor layer 312 or the first conductive semiconductor layer 313 may be disposed as a top layer.
  • a first semiconductor layer 312 may be disposed under the substrate 311.
  • the first semiconductor layer 312 may be formed using a compound semiconductor of Group II to Group V elements.
  • the first semiconductor layer 312 may include, for example, at least one of GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP, GaP.
  • the first semiconductor layer 312 may be formed of at least one of a buffer layer and an undoped semiconductor layer, and the buffer layer may reduce the difference in lattice constant between the substrate and the nitride semiconductor layer, and the undoped semiconductor The layer can improve the crystal quality of the semiconductor.
  • the first semiconductor layer 312 may not be formed.
  • the light emitting structure 310 may be disposed under the first semiconductor layer 312 or the substrate 311.
  • the light emitting structure 310 may be selectively formed from a compound semiconductor of Group II to Group V elements and Group III-V elements, and may emit a predetermined peak wavelength within a wavelength range of the ultraviolet band to the visible light band.
  • the light emitting structure 310 is disposed between the first conductive semiconductor layer 313, the second conductive semiconductor layer 315, the first conductive semiconductor layer 313 and the second conductive semiconductor layer 315.
  • the active layer 314 is included.
  • the first and second conductive semiconductor layers 313 and 315 may be formed in a single layer or a multilayer structure.
  • the first conductive semiconductor layer 313 may be implemented as a semiconductor, for example, an n-type semiconductor layer doped with a first conductive dopant. And the first conductive semiconductor layer 313 comprises a composition formula of In x Al y Ga 1 -x- y N (0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 1, 0 ⁇ x + y ⁇ 1).
  • the first conductive semiconductor layer 313 may be selected from compound semiconductors of Group III-V elements, such as GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, and AlGaInP.
  • the first conductive dopant is an n-type dopant and includes a dopant such as Si, Ge, Sn, Se, Te, or the like.
  • the active layer 314 is disposed under the first conductive semiconductor layer 313 and optionally includes a single quantum well, a multi quantum well (MQW), a quantum wire structure, or a quantum dot structure. And the cycle of the well and barrier layers.
  • the period of the well layer / barrier layer is, for example, InGaN / GaN, GaN / AlGaN, AlGaN / AlGaN, InGaN / AlGaN, InGaN / InGaN, AlGaAs / GaA, InGaAs / GaAs, InGaP / GaP, AlInGaP / InGaP, InP / GaAs At least one of the pairs.
  • the second conductive semiconductor layer 315 is disposed under the active layer 313.
  • the second conductive semiconductor layer 315 may be a semiconductor doped with a second conductive dopant, for example, In x Al y Ga 1 -xy N (0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 1, 0 ⁇ x + y ⁇
  • the composition formula of 1) is included.
  • the second conductive semiconductor layer 315 may be formed of at least one of compound semiconductors such as GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, and AlGaInP.
  • the second conductive semiconductor layer 315 is a p-type semiconductor layer, and the first conductive dopant is a p-type dopant and may include Mg, Zn, Ca, Sr, and Ba.
  • the light emitting structure 310 may include a p-type semiconductor layer as the first conductive semiconductor layer 313 and an n-type semiconductor layer as the second conductive semiconductor layer 315.
  • a third conductive semiconductor layer having a polarity opposite to that of the second conductive type may be formed under the second conductive semiconductor layer 315.
  • the light emitting structure 310 may be implemented as any one of an n-p junction structure, a p-n junction structure, an n-p-n junction structure, a p-n-p junction structure.
  • the electrode layer 331 is formed under the second conductive semiconductor layer 315.
  • the electrode layer 331 may include a reflective layer, and the reflective layer may further include an ohmic layer in contact with the light emitting structure 310.
  • the reflective layer may be selected from a material having a reflectance of 70% or more, for example, a metal of Al, Ag, Ru, Pd, Rh, Pt, Ir, or an alloy of two or more of the above metals.
  • the electrode layer 331 may include a single layer or a multilayer structure, and may include, for example, a laminated structure of a transparent electrode layer / reflective layer.
  • a light extraction structure such as roughness may be formed on a surface of at least one of the second conductive semiconductor layer 315 and the electrode layer 331, and the light extraction structure may change a critical angle of incident light. It can improve the light extraction efficiency. Light reflected by the electrode layer 331 may be emitted through the substrate 311.
  • the first electrode 335 may be disposed under a portion of the first conductive semiconductor layer 313, and the second electrode 337 may be disposed under a portion of the electrode layer 331.
  • the first electrode 335 is electrically connected to the first conductive semiconductor layer 315, and the second electrode 337 is connected to the second conductive semiconductor layer 315 through the electrode layer 331. Can be electrically connected.
  • the first electrode 335 and the second electrode 337 are made of at least one or an alloy of Cr, Ti, Co, Ni, V, Hf, Ag, Al, Ru, Rh, Pt, Pd, Ta, Mo, and W. Can be formed.
  • the first electrode 335 and the second electrode 337 may have the same stacked structure or different stacked structures, and may have a single layer or a multilayer structure.
  • the insulating layer 333 is disposed under the electrode layer 331, a lower surface of the second conductive semiconductor layer 315, side surfaces of the second conductive semiconductor layer 315 and the active layer 314, and It may be disposed in a portion of the first conductive semiconductor layer 313.
  • the insulating layer 333 is formed in the lower region of the light emitting structure 310 except for the electrode layer 331, the first electrode 335, and the second electrode 337. The lower part is electrically protected.
  • the insulating layer 333 includes an insulating material or an insulating resin formed of at least one of an oxide, nitride, fluoride, and sulfide having at least one of Al, Cr, Si, Ti, Zn, and Zr.
  • the insulating layer 333 may be selectively formed of, for example, SiO 2 , Si 3 N 4 , Al 2 O 3 , or TiO 2 .
  • the insulating layer 333 is formed to prevent an interlayer short of the light emitting structure 310 when forming a metal structure for flip bonding under the light emitting structure 310.
  • a phosphor layer (not shown) may be disposed on the light emitting diode, and the phosphor layer may be disposed on an upper surface of the light emitting diode or on an upper surface / side surface thereof.
  • the phosphor layer may improve the wavelength conversion efficiency of light emitted from the light emitting diode.
  • the phosphor layer may include at least one of a red phosphor, a green phosphor, a blue phosphor, and a yellow phosphor, but is not limited thereto.
  • the phosphor may be selectively formed among, for example, YAG, TAG, Silicate, Nitride, and Oxy-nitride-based materials.
  • the optical module according to the embodiment may be provided in one unit or may be provided in a form in which a plurality of optical modules are arranged.
  • the optical module according to the embodiment may be applied to the UV lamp of the exposure or curing machine.
  • the present invention can provide an ultraviolet optical module.
  • the present invention provides an ultraviolet optical module having a narrow beam angle, and can be applied to industrial and industrial lamps.
  • the present invention can be applied to an ultraviolet light module having a narrow directivity angle as a lamp of an exposure machine or a curing machine.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Animal Behavior & Ethology (AREA)
  • General Health & Medical Sciences (AREA)
  • Public Health (AREA)
  • Veterinary Medicine (AREA)
  • General Engineering & Computer Science (AREA)
  • Engineering & Computer Science (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)
  • Non-Portable Lighting Devices Or Systems Thereof (AREA)
  • Arrangement Of Elements, Cooling, Sealing, Or The Like Of Lighting Devices (AREA)
PCT/KR2017/003143 2016-03-23 2017-03-23 광학 모듈 Ceased WO2017164672A1 (ko)

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CN201780019769.XA CN108885351B (zh) 2016-03-23 2017-03-23 光学模块
JP2018549962A JP7289499B2 (ja) 2016-03-23 2017-03-23 光学モジュール
US16/087,371 US10738968B2 (en) 2016-03-23 2017-03-23 Optical module

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KR10-2016-0034922 2016-03-23
KR1020160034922A KR102659369B1 (ko) 2016-03-23 2016-03-23 광학 모듈

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US20200124248A1 (en) 2020-04-23
KR102659369B1 (ko) 2024-04-22
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CN108885351B (zh) 2021-06-04
KR20170110476A (ko) 2017-10-11
CN108885351A (zh) 2018-11-23
JP2019511127A (ja) 2019-04-18

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