WO2017160074A1 - Pâte électroconductrice sans plomb pour cellule solaire - Google Patents
Pâte électroconductrice sans plomb pour cellule solaire Download PDFInfo
- Publication number
- WO2017160074A1 WO2017160074A1 PCT/KR2017/002787 KR2017002787W WO2017160074A1 WO 2017160074 A1 WO2017160074 A1 WO 2017160074A1 KR 2017002787 W KR2017002787 W KR 2017002787W WO 2017160074 A1 WO2017160074 A1 WO 2017160074A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- solar cell
- lead
- glass frit
- conductive paste
- paste composition
- Prior art date
Links
- 239000011521 glass Substances 0.000 claims abstract description 72
- 239000000203 mixture Substances 0.000 claims abstract description 53
- 239000000843 powder Substances 0.000 claims abstract description 28
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 23
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 20
- 229910018068 Li 2 O Inorganic materials 0.000 claims description 18
- 229910052709 silver Inorganic materials 0.000 claims description 18
- 239000004332 silver Substances 0.000 claims description 18
- GNTDGMZSJNCJKK-UHFFFAOYSA-N divanadium pentaoxide Chemical compound O=[V](=O)O[V](=O)=O GNTDGMZSJNCJKK-UHFFFAOYSA-N 0.000 claims description 14
- 239000002245 particle Substances 0.000 claims description 13
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 9
- 230000009477 glass transition Effects 0.000 claims description 8
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 7
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 6
- 239000011651 chromium Substances 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 5
- 239000010931 gold Substances 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 239000010948 rhodium Substances 0.000 claims description 4
- 239000011135 tin Substances 0.000 claims description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 239000010941 cobalt Substances 0.000 claims description 3
- 229910017052 cobalt Inorganic materials 0.000 claims description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 3
- 229910052741 iridium Inorganic materials 0.000 claims description 3
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229910052703 rhodium Inorganic materials 0.000 claims description 3
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 2
- 229910052742 iron Inorganic materials 0.000 claims description 2
- 239000011701 zinc Substances 0.000 claims description 2
- 229910052725 zinc Inorganic materials 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 abstract description 14
- 229910003069 TeO2 Inorganic materials 0.000 abstract 1
- 230000002708 enhancing effect Effects 0.000 abstract 1
- LAJZODKXOMJMPK-UHFFFAOYSA-N tellurium dioxide Chemical compound O=[Te]=O LAJZODKXOMJMPK-UHFFFAOYSA-N 0.000 abstract 1
- 239000000758 substrate Substances 0.000 description 29
- 239000010408 film Substances 0.000 description 22
- 238000007639 printing Methods 0.000 description 11
- NDVLTYZPCACLMA-UHFFFAOYSA-N silver oxide Chemical compound [O-2].[Ag+].[Ag+] NDVLTYZPCACLMA-UHFFFAOYSA-N 0.000 description 10
- 239000000853 adhesive Substances 0.000 description 9
- 230000001070 adhesive effect Effects 0.000 description 9
- 230000000694 effects Effects 0.000 description 9
- -1 ionic compound silver cyanide Chemical class 0.000 description 9
- 229910004298 SiO 2 Inorganic materials 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 8
- 238000010304 firing Methods 0.000 description 8
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- 229910001923 silver oxide Inorganic materials 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 229910001935 vanadium oxide Inorganic materials 0.000 description 4
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 3
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000002270 dispersing agent Substances 0.000 description 3
- 239000004615 ingredient Substances 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 238000004017 vitrification Methods 0.000 description 3
- OMVSWZDEEGIJJI-UHFFFAOYSA-N 2,2,4-Trimethyl-1,3-pentadienol diisobutyrate Chemical compound CC(C)C(=O)OC(C(C)C)C(C)(C)COC(=O)C(C)C OMVSWZDEEGIJJI-UHFFFAOYSA-N 0.000 description 2
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 2
- 239000001856 Ethyl cellulose Substances 0.000 description 2
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 2
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 229920002678 cellulose Polymers 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 2
- 229920001249 ethyl cellulose Polymers 0.000 description 2
- 235000019325 ethyl cellulose Nutrition 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910001507 metal halide Inorganic materials 0.000 description 2
- 150000005309 metal halides Chemical class 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 229940100890 silver compound Drugs 0.000 description 2
- 150000003379 silver compounds Chemical class 0.000 description 2
- SQGYOTSLMSWVJD-UHFFFAOYSA-N silver(1+) nitrate Chemical compound [Ag+].[O-]N(=O)=O SQGYOTSLMSWVJD-UHFFFAOYSA-N 0.000 description 2
- VFWRGKJLLYDFBY-UHFFFAOYSA-N silver;hydrate Chemical compound O.[Ag].[Ag] VFWRGKJLLYDFBY-UHFFFAOYSA-N 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 239000002562 thickening agent Substances 0.000 description 2
- 239000013008 thixotropic agent Substances 0.000 description 2
- DAFHKNAQFPVRKR-UHFFFAOYSA-N (3-hydroxy-2,2,4-trimethylpentyl) 2-methylpropanoate Chemical compound CC(C)C(O)C(C)(C)COC(=O)C(C)C DAFHKNAQFPVRKR-UHFFFAOYSA-N 0.000 description 1
- ZXSQEZNORDWBGZ-UHFFFAOYSA-N 1,3-dihydropyrrolo[2,3-b]pyridin-2-one Chemical compound C1=CN=C2NC(=O)CC2=C1 ZXSQEZNORDWBGZ-UHFFFAOYSA-N 0.000 description 1
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 1
- DOVZUKKPYKRVIK-UHFFFAOYSA-N 1-methoxypropan-2-yl propanoate Chemical compound CCC(=O)OC(C)COC DOVZUKKPYKRVIK-UHFFFAOYSA-N 0.000 description 1
- VXQBJTKSVGFQOL-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethyl acetate Chemical compound CCCCOCCOCCOC(C)=O VXQBJTKSVGFQOL-UHFFFAOYSA-N 0.000 description 1
- QCAHUFWKIQLBNB-UHFFFAOYSA-N 3-(3-methoxypropoxy)propan-1-ol Chemical compound COCCCOCCCO QCAHUFWKIQLBNB-UHFFFAOYSA-N 0.000 description 1
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- 101710134784 Agnoprotein Proteins 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- UDSFAEKRVUSQDD-UHFFFAOYSA-N Dimethyl adipate Chemical compound COC(=O)CCCCC(=O)OC UDSFAEKRVUSQDD-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 1
- 229910005793 GeO 2 Inorganic materials 0.000 description 1
- 229910021193 La 2 O 3 Inorganic materials 0.000 description 1
- 229910052765 Lutetium Inorganic materials 0.000 description 1
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 1
- 229910017493 Nd 2 O 3 Inorganic materials 0.000 description 1
- 239000000020 Nitrocellulose Substances 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 125000005396 acrylic acid ester group Chemical group 0.000 description 1
- 230000002730 additional effect Effects 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 239000002518 antifoaming agent Substances 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
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- 239000000969 carrier Substances 0.000 description 1
- 229920002301 cellulose acetate Polymers 0.000 description 1
- 239000012461 cellulose resin Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
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- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- QYMFNZIUDRQRSA-UHFFFAOYSA-N dimethyl butanedioate;dimethyl hexanedioate;dimethyl pentanedioate Chemical compound COC(=O)CCC(=O)OC.COC(=O)CCCC(=O)OC.COC(=O)CCCCC(=O)OC QYMFNZIUDRQRSA-UHFFFAOYSA-N 0.000 description 1
- XTDYIOOONNVFMA-UHFFFAOYSA-N dimethyl pentanedioate Chemical compound COC(=O)CCCC(=O)OC XTDYIOOONNVFMA-UHFFFAOYSA-N 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
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- RHFOYRRUVLOOJP-UHFFFAOYSA-N ethoxyethane;propanoic acid Chemical compound CCOCC.CCC(O)=O RHFOYRRUVLOOJP-UHFFFAOYSA-N 0.000 description 1
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- 238000011156 evaluation Methods 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
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- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 239000012943 hotmelt Substances 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
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- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 description 1
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- 238000003475 lamination Methods 0.000 description 1
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- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
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- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920000193 polymethacrylate Polymers 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
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- 238000001556 precipitation Methods 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
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- CQLFBEKRDQMJLZ-UHFFFAOYSA-M silver acetate Chemical compound [Ag+].CC([O-])=O CQLFBEKRDQMJLZ-UHFFFAOYSA-M 0.000 description 1
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- LKZMBDSASOBTPN-UHFFFAOYSA-L silver carbonate Substances [Ag].[O-]C([O-])=O LKZMBDSASOBTPN-UHFFFAOYSA-L 0.000 description 1
- 229910001958 silver carbonate Inorganic materials 0.000 description 1
- LFAGQMCIGQNPJG-UHFFFAOYSA-N silver cyanide Chemical compound [Ag+].N#[C-] LFAGQMCIGQNPJG-UHFFFAOYSA-N 0.000 description 1
- 229940098221 silver cyanide Drugs 0.000 description 1
- 229910001961 silver nitrate Inorganic materials 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
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- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
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- 229910052720 vanadium Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/02—Frit compositions, i.e. in a powdered or comminuted form
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
Definitions
- the present invention relates to a conductive paste composition for solar cells. More specifically, the present invention relates to a lead-free conductive paste composition for a solar cell that does not contain lead, which has excellent adhesiveness and has excellent conversion efficiency and resistance characteristics even though it has a low softening point, thereby improving power generation efficiency.
- Solar cells generate current and voltage by using the photovoltaic effect of absorbing light energy from solar energy to generate electrons and holes. It has a semiconductor wafer or substrate on which pn junctions are made and an emitter layer. In this case, the emitter is positioned on the light incident surface of the substrate, and a pn junction is formed at the interface between the substrate and the emitter.
- a front electrode that is energized with the emitter is formed on the emitter, and a rear electrode that is energized with the substrate is formed on the other surface facing the light incident surface.
- the front electrode is formed through an interfacial reaction with the antireflection film using a conductive paste. That is, a conductive paste is applied to the surface of the antireflection film formed on the semiconductor substrate to form a conductive film having a pattern, and a punch through phenomenon that penetrates the antireflection film through a glass frit during firing is performed. Through the emitter layer.
- the electrical contact layer of the solar cell is a light incident light is usually present in a grid pattern consisting of a finger bar (bus finger) or bus bar (bus bar).
- the glass frit decomposes and removes the anti-reflective film under the conductive layer by interfacial reaction during melting to form a front electrode, and simultaneously bonds the front electrode and the semiconductor substrate so that both flow normally in the circuit.
- the interfacial reaction is a redox reaction, in which some elements are reduced to produce by-products.
- Conventional glass frit has been used to contain lead in order to lower the softening point, which leads to a large problem in environmental load because lead is left as a by-product by reduction.
- the present invention has been made to solve the above problems, and an object thereof is to provide a lead-free conductive paste for solar cells that does not contain lead and has a low softening point and excellent adhesive strength.
- an object of the present invention is to provide a lead-free conductive paste for solar cells that can improve the electrical characteristics of the solar cell, such as conversion efficiency, open voltage, curve factor in the solar cell.
- the present invention comprises (a) a conductive powder, (b) a glass frit containing TeO 2 , BaO and ZnO and (c) an organic vehicle,
- the glass frit may further include Li 2 O.
- the glass frit may further include silver (Ag) oxide or vanadium (V) oxide.
- the glass frit may have a glass transition temperature (Tg) of 200 to 350 ° C and a softening point (Ts) of 250 to 500 ° C.
- the present invention also includes (a) a conductive powder, (b) a glass frit containing TeO 2 , BaO and ZnO and (c) an organic vehicle,
- a lead-free conductive paste composition for a crystalline silicon solar cell front electrode wherein the glass frit does not contain lead (Pb).
- the glass frit may include 65 to 85% by weight of TeO 2 , 1 to 25% by weight of BaO and 1 to 25% by weight of ZnO. have.
- the glass frit may include 65 to 85% by weight of TeO 2 , 1 to 25% by weight of BaO and 1 to 25% by weight of ZnO. have.
- the glass frit may further include Li 2 O.
- the glass frit may further include silver (Ag) oxide or vanadium (V) oxide.
- the glass frit may have a glass transition temperature (Tg) of 200 to 350 ° C and a softening point (Ts) of 250 to 500 ° C. have.
- the glass frit may have an average particle diameter of 0.5 to 5.0 ⁇ m.
- the composition may include 0.5 to 10 wt% of the total composition of glass frit.
- the conductive powder is silver, gold, copper, nickel, aluminum, palladium, platinum, chromium, cobalt, tin, zinc, iron, iridium , Rhodium, tungsten, molybdenum and alloys thereof.
- the conductive powder may be spherical, the average particle diameter of 0.5 to 5 ⁇ m, BET 0.2-0.8m2 / g.
- the lead-free conductive paste composition for a crystalline silicon solar cell front electrode may be applied to a solar cell having a conventional type or a PERC type (Passivated Emitter and Rear Cell type) structure.
- PERC type Passivated Emitter and Rear Cell type
- the lead-free conductive paste for solar cells according to the present invention does not contain lead, so there is no concern about environmental load, and while having a low softening point, there is an advantage of excellent adhesion between the substrate and the electrode.
- the lead-free conductive paste for solar cells according to the present invention has the advantage of lowering the contact resistance and greatly improving the conversion efficiency, the open voltage and the curve factor to improve the power generation efficiency of the solar cell.
- the present invention is a.
- (c) comprises an organic vehicle
- a lead-free conductive paste composition for a solar cell wherein the glass frit does not contain lead.
- the conductive powder is a powder of a metal that provides electrical properties in forming the solar cell front electrode, silver (Ag), gold (Au), copper (Cu), nickel (Ni), aluminum (Al), palladium (Pd), platinum (Pt), chromium (Cr), cobalt (Co), tin (Sn), zinc (Zn), iron (Fe), iridium (Ir), rhodium (Rh), tungsten (W), molybdenum (Mo) and the like can be used, and any metal powder having good conductivity can be used without particular limitation.
- silver (Ag) is more preferably used in view of not oxidizing even when the firing treatment is carried out in the air and maintaining excellent conductivity.
- the silver powder may be silver powder or a composite metal of silver powder.
- silver (Ag) includes silver oxide, a silver alloy, a silver compound, and other materials capable of precipitation of the silver powder by firing, in addition to pure silver powder.
- the conductive powder may have a spherical shape, a flake shape, a plate shape, an amorphous form, or a combination thereof.
- the conductive powder has a spherical shape.
- the particle diameter of the conductive powder can be adjusted to an appropriate range in consideration of the desired sintering speed and the influence of the process of forming the electrode. More preferably, the average particle diameter of the conductive powder may be 0.5 to 5 ⁇ m, preferably 0.7 to 2 ⁇ m. More preferably, a mixture of conductive powders having different average particle diameters is used.
- the BET of the conductive powder is 0.2 to 0.8 m 2 / g, preferably 0.3 to 0.5 m 2 / g is better to improve the electrical properties.
- the conductive powder of the present invention may be contained 60 to 95% by weight, preferably 65 to 85% by weight based on the total weight of the paste composition.
- the viscosity of the paste may be lowered to cause phase separation, and the electrode may have a thin film thickness, thereby increasing resistance.
- the conductive powder is more than 95% by weight, the viscosity is high, making printing difficult and costly. There is a problem that is raised.
- the glass frit serves to improve the adhesion between the conductive powder and the substrate and to soften during sintering to lower the firing temperature.
- the glass frit according to the present invention not only improves the electrical characteristics of the solar cell, but also lowers the contact resistance and has a low softening point, and at the same time, excellent adhesive strength can be achieved, and the lead-free conductive paste for solar cells including the glass frit
- the composition can be used without being limited to the solar cell front electrode or the back electrode, and is more effective to use a finger bar or bus bar in the formation using a pattern.
- the glass frit is preferably TeO 2 More preferably 65 to 85% by weight, 1 to 25% by weight BaO and 1 to 25% by weight ZnO.
- the TeO 2 maintains the viscosity of the glass frit appropriately and improves the reactivity between the paste and the antireflection film.
- the low viscosity of the glass frit allows etching in a wider area to occur during the interfacial reaction. This can be implemented in combination with BaO and ZnO, lowering the contact resistance to improve the light conversion efficiency, to form a stable glass phase in the interfacial reaction, and to improve the adhesion between the substrate and the electrode.
- the content range in the glass frit of TeO 2 may be 40 to 90% by weight, preferably 65 to 85% by weight. When the above range is satisfied, the viscosity characteristics are excellent, and excellent contact resistance and adhesion can be realized.
- the glass frit of the present invention necessarily includes a combination of TeO 2 , BaO and ZnO, thereby realizing environmentally friendly and excellent solar cell electrode properties by substituting a low softening point and high adhesive force, including conventional PbO.
- BaO and ZnO in the components of the glass frit are each more preferably in the content range of 1 to 25% by weight, preferably 2 to 18% by weight in the glass frit. When the above range is satisfied, it is possible to realize excellent solar cell electrode efficiency and adhesive strength while lowering the softening point by combining with TeO 2 .
- the weight ratio of ZnO and BaO is more preferably 10: 1 to 1:10, preferably 7: 1 to 1: 4.
- the weight ratio of TeO 2 to BaO and ZnO is more preferably 40:60 to 90:10 in view of solar cell efficiency.
- the glass frit according to the present invention may further include Li 2 O to further improve the desired effect.
- Li 2 O may be in the content of 1 to 15% by weight of the glass frit, one embodiment of the more preferred glass frit is 65 to 85% by weight TeO 2 , 1 to 25% by weight BaO, 1 to 25% by weight ZnO And Li 2 O 1 to 15% by weight.
- the present invention provides a lead-free conductive paste composition for crystalline silicon solar cell front electrodes comprising a glass frit containing TeO 2 , BaO, ZnO and Li 2 O in combination with a conductive powder and an organic vehicle.
- the conductive paste composition forming the crystalline silicon solar cell front electrode includes a glass frit containing a combination of TeO 2 , BaO, ZnO and Li 2 O, the anti-reflection film is etched during the firing process, and the conductive powder It is more effective in producing crystal grains in the emitter region so that the melt can be lowered to lower the resistance.
- it has a low softening point and at the same time can implement excellent adhesive strength, it is possible to improve the open voltage (Voc) and the curve factor (FF) to improve the efficiency of the solar cell.
- the glass frit of the present invention may further contain a metal oxide in a range that does not reduce the desired effect.
- Such metal oxides may preferably further include silver oxide.
- the silver compound is an ionic compound silver cyanide (AgCN), silver nitrate (AgNO 3 ), silver halide (Ag-X), silver carbonate (Ag 2 CO 3 ), silver acetate (AgC 2 H 3 O 2 ), silver oxide (Ag 2 O ) May be used alone or in combination.
- the silver oxide is not particularly limited, but it is more preferable to use silver oxide (Ag 2 O) to realize the desired effect in combination with other components.
- the glass frit of the present invention may further include vanadium oxide.
- vanadium pentoxide (V 2 O 5 ) as the vanadium oxide may improve electrical characteristics in combination with other components.
- Glass frit of the present invention may further increase the adhesive strength between the substrate and the front electrode by selectively further comprising the silver oxide or vanadium oxide, it is possible to maximize the efficiency of the solar cell.
- Glass frit according to an embodiment of the present invention is GeO 2 , Ga 2 O 3 , In 2 O 3 , NiO, CoO, B 2 O 3 , CaO, MgO, SrO, MnO, SeO 2 , MoO in addition to the metal oxide 3 , WO 3 , Y 2 O 3 , As 2 O 3 , La 2 O 3 , Nd 2 O 3 , Bi 2 O 3 , Ta 2 O 5 , FeO, HfO 2 , Cr 2 O 3 , CdO, Sb 2 O 3 , PbF 2 , ZrO 2 , Mn 2 O 3 , P 2 O 5 , CuO, Pr 2 O 3 , Gd 2 O 3 , Sm 2 O 3 , Dy 2 O 3 , Eu 2 O 3 , Ho 2 O 3 , Yb 2 OL 3 , Lu 2 O 3 , CeO 2 , BiF 3 , SnO, SiO 2 , Ag 2 O, Nb 2 O 5 , TiO
- the metal halide examples include NaCl, KBr, NaI, ZnF 2 , and the like, but are not limited thereto. At this time, the content of the compound is 30% by weight or less, preferably 10% by weight or less of the total weight of the glass frit.
- silver oxide or vanadium oxide it may further include any one or more selected from SiO 2 , B 2 O 3, Al 2 O 3 , Ta 2 O 5 , WO 3 , and MoO 3 .
- One embodiment of the combination of the glass frit is limited to the components in the present invention may be composed of Ag 2 O in TeO 2 , BaO, ZnO and Li 2 O, in another embodiment TeO 2 , BaO, ZnO and Li 2 O to Ag 2 O, SiO 2 And B 2 O 3 .
- Another glass frit may include TeO 2 , BaO, ZnO, and Li 2 O consisting of V 2 O 5 , and TeO 2 , BaO, ZnO, and Li 2 O of Bi 2 O 3 . It can be mentioned.
- Another embodiment of the glass frit may include SiO 2 or SiO 2 and B 2 O 3 in TeO 2 , BaO, ZnO and Li 2 O.
- preferred embodiments include TeO 2 , BaO, ZnO and Li 2 O in Ag 2 O, SiO 2 And B 2 O 3 , which not only improves the electrical characteristics of the solar cell with excellent conversion efficiency, open voltage and curve factor, but also has a low glass transition temperature and softening point, and at the same time, an excellent adhesion strength of 2N or more.
- the conductive paste composition for solar cells according to the present invention may be used in one or more forms, i.e. alone or in a mixed form, and may be used by mixing one or more selected from Pb-based glass frits or Pb free-based glass frits, but does not contain lead. It is more preferable to use Pb free glass frit.
- the content of the glass frit in the total composition of the glass frit may be 0.5 to 10% by weight, preferably 1 to 5% by weight. When the content range is satisfied, excellent viscosity characteristics can be maintained during the interfacial reaction, and excellent adhesion strength can be given while keeping the contact resistance between the substrate and the front electrode very low.
- the glass frit according to the present invention can be used in admixture with a glass frit having other components.
- the conductive paste may further include a compound in ZnO, CuO, MnO, NiO, Fe 2 O 3 and the like. In this case, not only the implementation of the desired effects in the present invention but also the advantages of the additional effects can be seen.
- the glass frit may have a glass transition temperature (Tg) of 200 to 350 ° C, preferably 240 to 310 ° C.
- the glass frit (b) of the present invention may have a softening point (Ts) of 250 to 500 ° C, preferably 290 to 350 ° C. When the glass transition temperature and the softening point range is satisfied, it is better to achieve the desired physical properties.
- glass frit has an average particle diameter of 0.5 to 5.0 ⁇ m, preferably 0.7 to 3 ⁇ m. If the above range is satisfied, pinhole defects are not caused when the electrode is formed.
- the organic vehicle (vehicle) imparts viscosity and rheological properties to the printability to the composition through physical mixing with the inorganic component of the solar cell paste.
- the organic vehicle may be an organic vehicle that is commonly used in solar cell electrode pastes, and may be, for example, a mixture of a polymer and a solvent.
- Trimethyl Pentanyl Diisobutylate TXIB
- Dibasic ester Dibutyl ester
- Butyl Carbitol BC Butyl Carbitol Acetate
- Butyl Cellulsolve Butyl Cellulose Acetate
- Propylene Glycol Monomethyl Ether Dipropylene Glycol Monomethyl ether, dimethyl adipate, dimethyl glutarate, propylene glycol monomethyl ether propionate, ethyl ether propionate, terpineol, propylene glycol monomethyl ether acetate, dimethylamino formaldehyde, methyl ethyl ketone
- Cellulose resins such as ethylcellulose, methylcellulose, nitrocellulose, cellulose esters, rosin or polymethacrylates of alcohols in at least
- the organic vehicle is 4 to 35% by weight, preferably 5 to 30% by weight based on the total weight of the paste.
- the conductive paste for solar cells of the present invention may further include a conventional additive in order to improve the flow characteristics, process characteristics and stability in addition to the components described above.
- the additives include, but are not limited to, dispersants, thickeners, thixotropic agents, leveling agents, plasticizers, viscosity stabilizers, antifoaming agents, pigments, ultraviolet stabilizers, antioxidants, coupling agents, and the like.
- the dispersant may include, but is not limited to, LUBRISOL Corporation SOLSPERSE, BYK Corporation DISPERBYK-180, 110, 996, and 997.
- the thickener may include, but is not limited to, BYK-410, 411, and 420 of BYK Corporation.
- the thixotropic agent may include, but is not limited to, ELEMENTIS Co., Ltd. THIXATROL MAX, BYK Co., Ltd., ANTI-TERRA-203, 204, 205, and the like.
- the leveling agent may include, but is not limited to, BYK-3932 P, BYK-378, BYK-306, BYK-3440, and the like.
- the organic additive may be contained in an amount of about 1 to 20 wt% based on 100 wt% of the entire conductive paste composition.
- the present invention can provide a solar cell front electrode formed using the lead-free conductive paste composition for solar cells described above.
- the front electrode is formed through a process of printing, drying, and firing the conductive paste composition on a wafer substrate.
- Printing methods may include screen printing, dispensing printing, pad printing, stencil printing, ink jet printing, hot melt printing or any suitable micro-lamination / direct writing, Double and / or multiple printing may be used, but is not particularly limited thereto.
- the front electrode may have the same or different conductive paste used in two or more printing processes as the first conductive paste when the electrode is formed on the wafer substrate through a multi-printing process.
- the site to be printed first and the site printed by two or more times may be the same or different.
- the present invention provides a solar cell including the solar cell front electrode.
- a solar cell comprises a substrate of a first conductivity type; An emitter layer of a second conductivity type formed on the substrate; An anti-reflection film formed on the emitter layer; A front electrode connected to the emitter layer through the anti-reflection film and manufactured using the conductive paste composition according to the present invention described above; And a rear electrode formed on the rear surface of the substrate.
- the substrate of the first conductivity type is selected from P type or N type.
- the emitter layer of the second conductivity type is selected to have a conductivity type opposite to that of the substrate.
- Group 3 elements are doped with impurities to form the P + layer
- Group 5 elements are doped with impurities to form the N + layer.
- B, Ga, In may be doped to form a P + layer
- P, As, Sb may be doped to form an N + layer.
- a P-N junction is formed at an interface between the substrate and the emitter layer, which is a part that receives sunlight and generates a current by the photovoltaic effect. The electrons and holes generated by the photovoltaic effect are attracted to the P layer and the N layer, respectively, and move to the electrodes bonded to the lower substrate and the upper emitter layer, respectively.
- the anti-reflection film reduces the reflectance of sunlight incident on the front surface of the solar cell.
- the amount of light reaching the P-N junction is increased to increase the short circuit current of the solar cell, and the conversion efficiency of the solar cell is improved.
- the anti-reflection film may have, for example, a single film selected from a silicon nitride film, a silicon nitride film including hydrogen, a silicon oxide film, a silicon oxynitride film, or a multi-film structure in which two or more are combined, but is not limited thereto.
- the front electrode and the back electrode can be produced by various known techniques, but are preferably formed by screen printing.
- the front electrode is formed by screen printing the front electrode formation point using the silver paste composition of the present invention and then performing heat treatment. When the heat treatment is performed, the front electrode penetrates the antireflection film and contacts the emitter layer by the punch through phenomenon.
- the back electrode is formed by printing a paste composition containing aluminum as a conductive metal on the back of the substrate and performing heat treatment. During the heat treatment of the rear electrode, aluminum is diffused through the rear surface of the substrate to form a rear electric field on the rear electrode and the substrate interface. When the rear electric field layer is formed, the carriers can be prevented from moving to the back of the substrate to be recombined, thereby improving the conversion efficiency of the solar cell.
- the solar cell according to the present invention may have a PERC structure.
- the passivated emitter and rear cell (PERC) type solar cells have passivation not only on the emitter layer but also on the rear side, and can increase the open voltage and short circuit current density while reducing substrate damage.
- the passivation on the back side increases the open voltage by increasing the doping level of phosphorous on the contact surface of the back electrode and the substrate compared to the emitter region, and increases the reflection of light from the backside without heat treatment.
- the lead-free conductive paste for solar cells according to the present invention can be applied to the rear electrode of such a PERC type solar cell to maximize its effect.
- the comparative example 4 contained lead and used Te-Pb type glass frit (DPS-1900V17 by Daeju Electronic Material Co., Ltd.).
- Lead-free conductive pastes were prepared using the glass frits prepared in Examples and Comparative Examples, respectively.
- Silver powder was used as the conductive powder.
- Silver powder was used by mixing 45% by weight of silver particles (Technic) having an average particle diameter of 1.6 ⁇ m and 45% by weight of silver particles (Technic) having an average particle diameter of 2.1 ⁇ m. 2 wt% was used.
- As a binder cellulose ester (EASTMAN CAB-382-20) and ethyl cellulose resin (AQUALON ECN-50) were used at 1% by weight, respectively, and as solvent, 1.5% by weight of Trimethyl Pentanyl Diisobutylate (TXIB) and butylcarbitol.
- Phosphorus (P) was doped by a diffusion process using POCl 3 in a tube furnace (850 ° C.) using a 156 mm crystalline silicon wafer to form an emitter layer having an 80 ⁇ / sq sheet resistance.
- a silicon nitride film was deposited on the emitter layer by using chemical vapor deposition (PECVD) to form a silicon nitride film using precursor SiH 4 and NH 3 to form an antireflection film.
- PECVD chemical vapor deposition
- the silver (Ag) paste prepared by the present invention Screen printing (using ASYS COMPANY printing press) was performed on the light-receiving surface where light was absorbed, applied in a constant pattern, and dried.
- Screen printing a stainless wire 400 mesh of 450 mm x 450 mm frame was used.
- the screen printing pattern consisted of 100 finger bars of 38 micrometer line width, and three bus bars of 1.5 mm width.
- the dry film thickness after screen printing was 19 ⁇ m, the drying temperature was 250 °C.
- the obtained solar cell silicon substrate was simultaneously fired in a belt type firing furnace at a peak temperature of about 800 ° C. under a condition of about IN-OUT for about 1 minute to prepare a desired solar cell.
- the electrical characteristics (I-V characteristics) of the manufactured solar cells were tested using a solar simulator (SOL3A) manufactured by ORIEL. Ten samples were prepared for each paste, and the average value of the ten samples was used, and the characteristics of the manufactured solar cells are shown in Tables 2, 5, and 6. The results of Examples 8 to 19 and Comparative Examples 1 to 4 described relative values (%) based on the conversion efficiency, the open voltage, the curve factor, the short circuit current, and the line resistance of Comparative Example 1.
- Tg Glass transition temperature
- Ts softening temperature
- the manufactured electrode measured the conversion efficiency (Eff,%), the open voltage (Voc, V), the curve factor (FF,%) of the solar cell using a solar cell efficiency measuring equipment (pasna, CT-801).
Abstract
La présente invention porte sur une pâte électroconductrice sans plomb pour cellules solaires et une composition de pâte électroconductrice sans plomb pour cellules solaires, qui ne contient pas de plomb et qui présente une adhésion exceptionnelle en dépit de son faible point de ramollissement, et un excellent rendement de conversion et d'excellentes propriétés résistantes, renforçant ainsi le rendement d'électrogénèse. Selon un mode de réalisation, la présente invention concerne une composition de pâte électroconductrice sans plomb pour cellules solaires, comprenant de la poudre électroconductrice; une fritte de verre contenant du TeO2, du BaO, et du ZnO; et un véhicule organique.
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KR20190066158A (ko) * | 2017-12-05 | 2019-06-13 | 삼성에스디아이 주식회사 | 태양전지 전극 형성용 조성물 및 이로부터 제조된 전극 |
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KR20100125273A (ko) * | 2008-01-30 | 2010-11-30 | 바스프 에스이 | 유리 프릿 |
KR20130062191A (ko) * | 2011-12-02 | 2013-06-12 | 제일모직주식회사 | 태양전지 전극용 페이스트 조성물, 이를 이용하여 형성된 전극 및 이를 포함하는 태양전지 |
KR20140103233A (ko) * | 2013-02-15 | 2014-08-26 | 제일모직주식회사 | 태양전지 전극 형성용 조성물 및 이로부터 제조된 전극 |
KR101298970B1 (ko) * | 2013-03-12 | 2013-08-22 | 주식회사 파티클로지 | 레이저실링용 저융점 유리 프릿 조성물, 그로부터 제조된 저융점 유리 프릿 및 저융점 유리 프릿을 이용한 amoled 실링 방법 |
KR20140119247A (ko) * | 2013-03-27 | 2014-10-10 | 제일모직주식회사 | 태양전지 전극 형성용 조성물 및 이로부터 제조된 전극 |
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TWI635514B (zh) | 2018-09-11 |
TW201735054A (zh) | 2017-10-01 |
KR20170108577A (ko) | 2017-09-27 |
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