WO2017154507A1 - Dispositif de remplissage de métal et procédé de remplissage de métal - Google Patents

Dispositif de remplissage de métal et procédé de remplissage de métal Download PDF

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Publication number
WO2017154507A1
WO2017154507A1 PCT/JP2017/005737 JP2017005737W WO2017154507A1 WO 2017154507 A1 WO2017154507 A1 WO 2017154507A1 JP 2017005737 W JP2017005737 W JP 2017005737W WO 2017154507 A1 WO2017154507 A1 WO 2017154507A1
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Prior art keywords
molten metal
chamber
unit
processing chamber
metal
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Application number
PCT/JP2017/005737
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English (en)
Japanese (ja)
Inventor
山口　征隆
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住友精密工業株式会社
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Publication of WO2017154507A1 publication Critical patent/WO2017154507A1/fr

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22D—CASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
    • B22D19/00—Casting in, on, or around objects which form part of the product
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body

Definitions

  • the present invention relates to a metal filling apparatus and a metal filling method, and more particularly to a metal filling apparatus and a metal filling method for filling a molten metal in a minute space formed so as to be open on the surface of an object to be treated.
  • a mounting portion on which a wafer (processing object) is to be mounted a cylindrical housing arranged such that a lower end face faces the mounting portion, and an inner periphery of the housing
  • a metal filling device is disclosed with a piston inserted on the side.
  • the metal filling apparatus can form a processing chamber by the surface of the wafer, the housing and the piston by bringing the lower end surface of the housing into contact with the surface of the wafer on the mounting portion.
  • the molten metal is supplied into the processing chamber from the supply path communicating with the processing chamber from the side surface of the housing, and the molten metal is mechanically pressed by the pressing portion at the tip of the piston by moving the piston to the wafer side. .
  • the molten metal is filled in the minute space on the surface of the wafer.
  • a conductive metal is formed in the minute space.
  • the conductor metal is formed as a through electrode of the wafer.
  • one of the molten metal in a film form on the surface of the processing object (wafer)
  • the part may be partially solidified between the pressing part at the end of the piston and the surface of the object to be treated.
  • the partially solidified material functions like a support column, and even if pressure is applied using a piston, the portion of the liquid phase that is not solidified may not be sufficiently pressurized, which may cause the molten metal to There is a problem that it becomes difficult to maintain pressurization.
  • the present invention has been made to solve the problems as described above, and an object of the present invention is to maintain the pressure on the molten metal in the solidification process, and to be treated. It is an object of the present invention to provide a metal filling apparatus and a metal filling method capable of controlling the ambient atmosphere and pressure of an object to be treated even during loading and unloading.
  • a metal-filling apparatus for filling a molten metal in a minute space formed so as to be open on the surface of an object to be treated.
  • a molten metal supply unit including a mounting portion having a mounting surface on which the mounting surface is mounted, an opposing surface facing the mounting surface, and a molten metal supply port provided on the opposing surface; And an airtight chamber for accommodating the mounting portion, the molten metal supply portion and the seal portion therein, and a gas supply portion for supplying a gas into the chamber.
  • the processing chamber is formed by the surface, the seal portion, and the surface of the processing object, and the molten metal is supplied into the processing chamber through the supply port by the molten metal supply unit, and the molten metal is filled in the minute space.
  • the “fine space” of the present invention mainly includes fine grooves having a width of 100 ⁇ m or less and fine non-through holes having a hole diameter of 100 ⁇ m or less formed in a wafer by etching.
  • an airtight chamber containing the mounting portion, the molten metal supply portion and the seal portion therein, and a gas supply portion for supplying gas into the chamber are provided.
  • a processing chamber is formed by the opposing surface of the molten metal supply portion, the seal portion provided on the opposing surface, and the surface of the processing object, and the molten metal supply portion supplies molten metal into the processing chamber through the supply port.
  • the metal filling apparatus is configured to fill the molten metal in the minute space.
  • the molten metal is supplied into the processing chamber formed by the facing surface, the seal portion, and the surface of the processing object to form a film, and the gas is supplied into the chamber to form the film on the surface of the processing object.
  • the film-like molten metal can be pressurized. In this case, even if the molten metal partially solidifies in the solidification process, the molten portion of the liquid phase other than the solidified portion can be reliably pressurized by the gas pressure. Therefore, the pressurization to the molten metal in the solidification process can be maintained.
  • the processing object the mounting unit on which the processing object is placed
  • the molten metal supply unit, and the seal unit, which constitute the processing chamber are housed in the airtight chamber, the processing chamber is completely opened.
  • control of the atmosphere and pressure in the chamber can be freely performed.
  • the atmosphere and pressure around the object to be treated can be controlled even when carrying in and out the object to be treated. Therefore, according to the first invention, it is possible to maintain the pressurization to the molten metal in the solidification process, and the atmosphere and pressure around the processing object even when carrying in and out the processing object. Control is possible.
  • the molten metal is added by the gas supplied from the gas supply unit in a state where the processing chamber is opened in the chamber. It is configured to be pressed. According to this structure, the molten metal can be easily pressurized by the gas by opening the processing chamber. Further, in the present invention, since the processing chamber is formed by the facing surface of the molten metal supply portion, the seal portion provided on the facing surface, and the surface of the processing object, the volume of the processing chamber can be minimized. It is possible. Therefore, even if the processing chamber is opened after the molten metal is supplied into the processing chamber, it is possible to suppress the molten metal from flowing and protruding to the periphery of the object to be processed.
  • the metal filling apparatus is configured to open the processing chamber in a state in which the inside of the chamber is controlled to a predetermined atmosphere in advance by the gas supplied from the gas supply unit. It is done.
  • the metal filling apparatus unlike the case where the inside of the processing chamber is opened after the processing chamber is opened, pressurization of the molten metal by the gas can be started simultaneously with the opening of the processing chamber. It can be shortened.
  • the state which the pressurization to the molten metal on a process target object runs short when the processing chamber is open
  • the metal filling apparatus controls the inside of the chamber to a predetermined atmosphere in advance by the gas supplied from the gas supply unit, and the pressure in the processing chamber is equal to or higher than the pressure in the chamber.
  • the processing chamber is configured to be opened in the state of According to this structure, the processing chamber can be opened in a state where the pressure inside the processing chamber is equal to or higher than the pressure outside the processing chamber (inside the chamber), so that the processing chamber can be opened easily and smoothly. That is, when the pressure inside the processing chamber is smaller than the pressure outside the processing chamber (inside the chamber), a pressure difference between the inside and the outside of the processing chamber generates a force that hinders the opening operation.
  • the pressure inside and outside the processing chamber is equal or the pressure inside the processing chamber is relatively high, the pressure difference does not prevent the opening operation, and the processing chamber can be opened easily and smoothly.
  • a method of increasing the pressure inside the processing chamber for example, a method of applying a supply pressure by supplying molten metal after being supplied into the processing chamber, a method of feeding a gas for pressurization into the processing chamber, an opposite surface
  • the internal pressure of the processing chamber at the time of release is increased to a generally constant value or slightly equal to the external pressure.
  • the metal filling apparatus is configured such that the processing chamber is opened before solidification of the molten metal in the processing chamber is completed. It is done.
  • the molten metal in the liquid phase on the object to be treated can be solidified in a pressurized state by the gas, so that the occurrence of filling defects such as voids can be effectively suppressed. it can.
  • the molten metal supply unit includes a first heating unit for heating the molten metal, and the metal filling apparatus separates the processing object from the molten metal supply unit and opens the processing chamber. , And the molten metal on the object to be treated is cooled.
  • the metal filling apparatus separates the processing object from the molten metal supply unit and opens the processing chamber. , And the molten metal on the object to be treated is cooled.
  • the placement unit includes a cooling unit for cooling the molten metal on the processing object.
  • the molten metal on the object to be treated is solidified more efficiently by the cooling unit provided in the mounting unit. It can be done.
  • the mounting unit includes a second heating unit for heating the object to be processed on the mounting unit.
  • the second heating unit provided in the mounting unit can quickly advance the processing target on the mounting unit so that the molten metal does not solidify on the processing target when the molten metal is supplied. It can be heated (preheated). Thereby, since supply of molten metal can be started promptly, processing time of a filling process can be shortened.
  • a metal supply pump provided outside the chamber for supplying the molten metal to the molten metal supply, a metal supply pump outside the chamber and the molten metal inside the chamber And a supply pipe connected to the supply unit.
  • the molten metal supply unit is provided inside the molten metal supply unit, and is arranged in the introduction unit of the molten metal connected to the supply port, and in the introduction unit.
  • a valve body configured to be able to open and close the supply port by advancing and retracting toward the mouth.
  • the processing chamber is formed by the facing surface of the molten metal supply portion, the seal portion provided on the facing surface, and the surface of the object to be treated.
  • the processing chamber can be formed limited to the local area where the Therefore, by moving at least one of the molten metal supply unit and the mounting unit in a direction parallel to the mounting surface, it is possible to form a local processing chamber at an arbitrary position on the surface of the processing object. It becomes. Therefore, when metal filling is performed in a local region on the surface of the processing object, the amount of molten metal used is further reduced as compared to the case where the processing chamber is formed almost all over the surface of the processing object. Can.
  • the metal filling apparatus preferably further comprises a pressure reducing section for evacuating and exhausting the inside of the chamber, and the processing chamber is formed in a state where the pressure inside the chamber is reduced by the pressure reducing section. ing.
  • a pressure reducing section for evacuating and exhausting the inside of the chamber
  • the processing chamber is formed in a state where the pressure inside the chamber is reduced by the pressure reducing section.
  • the chamber includes an openable / closable port for taking in and out an object to be treated.
  • an openable / closable port for taking in and out an object to be treated.
  • a metal filling method is a metal filling method for filling a molten metal in a minute space formed to be open on the surface of an object to be treated, and in an airtight chamber, the surface of the object to be treated And an annular seal portion provided on the opposite surface facing the surface to abut the surface, the seal portion and the surface of the object to be treated to form a processing chamber, and molten metal is formed in the processing chamber.
  • Supply the molten metal to the fine space to separate the seal from the object to be treated open the processing chamber after the supply of the molten metal in the chamber, and insert the object to be treated, the opposite surface and the seal inside.
  • the interior of the chamber housed in the chamber is pressurized with gas, and the molten metal on the object to be treated is pressurized with gas.
  • the molten metal is supplied into the processing chamber formed by the facing surface, the seal portion, and the surface of the processing object, and the inside of the chamber is pressurized with gas.
  • the molten pressure of the liquid phase other than the solidified portion is reliably applied by the gas pressure. Can be pressed. Therefore, the pressurization to the molten metal in the solidification process can be maintained.
  • opening the processing chamber in the airtight chamber even when the processing chamber is completely opened, control of the atmosphere and pressure in the chamber can be freely performed. Therefore, according to the second invention, it is possible to maintain the pressurization to the molten metal in the solidification process, and the atmosphere and pressure around the object to be treated even when carrying in and out the object to be treated Control is possible.
  • the inside of the chamber is pressurized in advance, and then the processing chamber is opened in the pressurized chamber.
  • pressurization of the molten metal by the gas can be started simultaneously with the opening of the processing chamber.
  • the molten metal is supplied in a state where the pressure in the processing chamber is equal to or higher than the pressure in the chamber. While opening the treatment room.
  • the processing chamber can be opened in a state where the pressure inside the processing chamber is equal to or higher than the pressure outside the processing chamber (inside the chamber), so that the processing chamber can be opened easily and smoothly.
  • a method of increasing the pressure inside the processing chamber for example, a method of applying a supply pressure by supplying molten metal after being supplied into the processing chamber, a method of feeding a gas for pressurization into the processing chamber, an opposite surface
  • the processing chamber is opened before solidification of the molten metal in the processing chamber is completed.
  • a treatment to improve the wettability to the molten metal of the treatment area including the fine space among the surfaces of the treatment object, or a treatment target At least one of the treatments for reducing the wettability to the molten metal of the surrounding area outside the treated area of the surface of the object is further performed.
  • the wettability is a concept indicating the affinity of the liquid to the solid surface.
  • the process of improving the wettability is, for example, a process of forming a film of a material having higher wettability with the molten metal than the processing object on the surface of the processing object, removing the surface oxide of the processing object by plasma or the like Treatment, and treatment to activate the surface state.
  • the process of reducing the wettability includes, for example, a process of forming a film having a lower wettability with the molten metal than the processing object on the surface of the processing object, and a process of oxidizing the surface of the processing object.
  • the wettability of the processing area can be made relatively high, and the wettability of the surrounding area outside the processing area can be made relatively low.
  • pressurization to the molten metal in the solidification process can be maintained, and the atmosphere around the object to be treated and the atmosphere around the object to be treated are also carried out and carried out. Can control the pressure.
  • FIG. 1 is a schematic view showing a metal filling apparatus according to a first embodiment of the present invention. It is an expanded sectional view of the processing chamber vicinity of the state which formed the processing chamber in FIG. It is a top view of a wafer for explaining the physical relationship of each field on a surface of a wafer at the time of processing room formation, and a seal part. It is sectional drawing of the wafer for demonstrating the positional relationship of each area
  • FIG. 5 is a schematic view showing a metal filling apparatus according to a second embodiment of the present invention.
  • FIG. 7 is a schematic view showing a metal filling apparatus according to a third embodiment of the present invention.
  • FIG. 10 is a schematic view showing a metal filling apparatus according to a fourth embodiment of the present invention. It is the model which showed the molten metal supply part of the metal filling apparatus by 5th Embodiment of this invention. It is a schematic diagram of the horizontal cross section of process chamber vicinity in FIG.
  • the metal filling apparatus 100 As shown in FIG. 1, the metal filling apparatus 100 according to the first embodiment has fine features such as vias formed so as to be opened on the surface 1 a of a semiconductor wafer (hereinafter simply referred to as wafer 1) which is an example of a processing object. It is an apparatus for filling the molten metal 3 in the space 2 (see FIGS. 5 and 6). Through-silicon vias (TSVs) are formed by the conductive metal formed by the solidification of the molten metal 3 filled in the minute space 2.
  • TSVs Through-silicon vias
  • the wafer 1 is made of a general semiconductor material such as silicon.
  • the wafer 1 has a substantially circular shape having a predetermined diameter of, for example, about 200 mm, and can cut out a plurality of semiconductor chips.
  • the wafer 1 is carried into the metal filling apparatus 100 in a state where the plurality of minute spaces 2 (see FIGS. 5 and 6) are formed by the pre-process such as the etching process.
  • the shape and size of the minute space 2 are not particularly limited, and for example, it is a round hole having a diameter of several ⁇ m and a depth of several tens of ⁇ m.
  • the molten metal 3 is, for example, lead-free solder.
  • Lead-free solder is easy to handle because it has a relatively low melting point among the materials used for filling.
  • a metal material used for the molten metal Au, Ag, Cu, Pt, Pd, Ir, Al, Ni, Sn, In, Bi, Zn, or the like depending on the purpose of filling the minute space 2 and the function of the filler metal. These alloys can be adopted, and metal materials other than the above may be used.
  • the metal filling apparatus 100 is provided on the opposite surface 21 with the mounting portion 10 having the mounting surface 11 on which the wafer 1 is to be mounted, the molten metal supply portion 20 including the opposing surface 21 opposing the mounting surface 11, and And an annular seal portion 22.
  • the metal filling apparatus 100 includes an airtight chamber 30 that accommodates the placement unit 10, the molten metal supply unit 20, and the seal unit 22 therein, and a gas supply unit 40 that supplies a gas into the chamber 30.
  • the metal filling apparatus 100 further includes a control unit 50 that controls the operation of the metal filling apparatus 100.
  • the mounting unit 10 is configured as a mounting table (stage) of the wafer 1.
  • the mounting unit 10 has a flat mounting surface 11 on the upper surface, and is configured to support the wafer 1 mounted on the mounting surface 11.
  • the placement surface 11 is substantially horizontal, and is disposed so as to face upward (that is, the placement surface 11 and the opposing surface 21 face in the vertical direction) orthogonal to the horizontal plane.
  • At least one of the mounting unit 10 and the molten metal supply unit 20 is configured to be movable in the up and down direction (directions in which they approach or separate from each other).
  • the metal filling apparatus 100 includes a drive unit 51 that moves the placement unit 10 in the vertical direction to move the placement unit 10 closer to or away from the molten metal supply unit 20.
  • the molten metal supply unit 20 is fixed at an upper position of the mounting unit 10 (a position overlapping the mounting unit 10 in the vertical direction).
  • the surface (lower surface) of the molten metal supply unit 20 on the side of the mounting unit 10 is an opposing surface 21.
  • the opposing surface 21 is a flat surface generally parallel (generally horizontal) to the mounting surface 11.
  • the facing surface 21 may not be flat.
  • a supply port 23 of the molten metal 3 is provided on the facing surface 21.
  • the molten metal supply unit 20 is configured to supply the molten metal 3 into the processing chamber 4 described later via the supply port 23 (see FIG. 2).
  • the seal portion 22 is provided annularly (see FIG. 3) on the opposing surface 21 so as to surround the supply port 23 on the opposing surface 21 of the molten metal supply portion 20. That is, the opposing surface 21 is divided by the seal portion 22 into a region including the supply port 23 inside the annular seal portion 22 and a region outside the seal portion 22.
  • the seal portion 22 is formed of, for example, an elastic body, and is provided so as to protrude from the facing surface 21 to the mounting portion 10 side. In the configuration example of FIGS. 1 to 3, the seal portion 22 has a predetermined diameter along the vicinity of the outer periphery of the circular wafer 1.
  • the processing chamber 4 is formed by the facing surface 21, the seal part 22 and the surface 1 a of the wafer 1, and the molten metal supply part 20
  • the molten metal 3 is supplied into the processing chamber 4 through the supply port 23 so that the molten metal 3 is filled in the minute space 2.
  • the control unit 50 controls the sealing unit 22 and the wafer 1 on the mounting surface 11 to be in contact with each other by the driving unit 51 shown in FIG. 1 to form the processing chamber 4 (see FIG. 2). Is configured as. That is, when the drive unit 51 raises the placement unit 10, the seal unit 22 and the surface 1a of the wafer 1 abut in the vertical direction, and the processing chamber 4 is formed.
  • the processing chamber 4 is surrounded by the seal portion 22 in contact with the surface 1 a of the wafer 1 in a state where the surface 1 a of the wafer 1 and the opposing surface 21 are separated by a slight predetermined distance D. Is sealed to form a sealed filling space.
  • the interval D corresponds to the internal height of the processing chamber 4.
  • the supply port 23 of the facing surface 21 and the minute space 2 of the wafer 1 are disposed inside the sealing portion 22 (in the processing chamber 4).
  • the molten metal 3 is supplied from the supply port 23 into the processing chamber 4, whereby the molten metal 3 is supplied to the surface 1 a of the wafer 1 and enters the minute space 2 opened in the surface 1 a. Molten metal 3 flows in.
  • the processing chamber 4 may not be completely sealed, and there is no problem even if, for example, there is a minute seal leak between the surface 1 a of the wafer 1 and the seal portion 22.
  • the metal filling apparatus 100 is provided outside the chamber 30 and supplies the molten metal 3 to the molten metal supply unit 20, the metal supply pump 52 outside the chamber 30 and the chamber And 30, a supply pipe 53 for connecting the molten metal supply unit 20 inside.
  • the metal supply pump 52 is disposed below the chamber 30 and connected to the molten metal supply unit 20 through a supply pipe 53 penetrating the lower partition 33 of the chamber 30. The space between the lower partition wall 33 and the supply pipe 53 is sealed.
  • the supply pipe 53 is connected to a passage 24 formed in the molten metal supply unit 20 via a connection (not shown) (a pipe joint). Thereby, the molten metal 3 is supplied from the metal supply pump 52 to the molten metal supply unit 20 at a predetermined discharge pressure.
  • the molten metal supply unit 20 includes the introduction unit 25 of the molten metal 3 provided inside the molten metal supply unit 20 and connected to the supply port 23. Further, the molten metal supply unit 20 includes a valve body 26 a disposed in the introduction unit 25 and configured to be able to open and close the supply port 23 by advancing and retreating toward the supply port 23.
  • the introduction portion 25 is formed as an internal space of the molten metal supply portion 20 and is in communication with the passage 24 connected to the metal supply pump 52 and the supply port 23 located at the lower end portion of the introduction portion 25.
  • the valve body 26 a constitutes the filling valve 26 of the molten metal 3 together with the valve body driving portion 26 b.
  • the valve body 26a can be vertically moved by the valve body driving unit 26b between a closed position closing the supply port 23 and an open position spaced apart and open from the supply port 23.
  • the molten metal supply unit 20 can supply the molten metal 3 into the processing chamber 4 at a predetermined supply pressure by the discharge pressure of the metal supply pump 52. Further, the molten metal supply unit 20 applies mechanical pressure to the molten metal 3 by moving the valve body 26 a toward the supply port 23 in the introduction unit 25 when the filling valve 26 is closed. Is possible.
  • the mounting unit 10 may be driven by the drive unit 51 in the direction toward the molten metal supply unit 20 side. In this case, since the wafer 1 on the placement unit 10 is pressed in a direction to approach the facing surface 21, it is possible to apply mechanical pressure to the molten metal 3.
  • the pressurization of the molten metal 3 promotes the filling of the molten metal 3 supplied on the surface 1 a of the wafer 1 into the minute space 2, and voids (voids) and the like remain in the minute space 2. Suppress.
  • the molten metal 3 when the molten metal 3 is supplied into the processing chamber 4, the molten metal 3 is maintained at the liquid phase temperature or more of the metal material. In order to avoid solidification of the molten metal 3 during supply or immediately after the supply onto the surface 1 a of the wafer 1, the molten metal supply unit 20 and the wafer 1 are maintained in advance at the liquidus temperature or more at the time of supply. preferable.
  • the molten metal supply unit 20 includes a heater 27 for heating the molten metal 3.
  • the heater 27 may be built in the molten metal supply unit 20 as shown in FIG. 2 or may be attached to the surface of the molten metal supply unit 20.
  • the placement unit 10 includes the heater 12 for heating the wafer 1 on the placement unit 10.
  • the heater 12 may be built in the placement unit 10 as shown in FIG. 2 or may be attached so as to be exposed on the placement surface 11 of the placement unit 10.
  • the heater 27 and the heater 12 are examples of the “first heating unit” and the “second heating unit” in the claims respectively.
  • the heater 27 and the heater 12 may have any configuration such as a resistance heating element or a lamp heater. Instead of providing the heater 27 and the heater 12, a heater for heating the inside of the chamber 30 may be provided.
  • the heater 27 and the heater 12 are controlled by the control unit 50 to a predetermined heating temperature.
  • the heater 27 is controlled to operate at all times during the operation of the metal filling process so that the molten metal 3 in the introducing unit 25 and in the vicinity of the supply port 23 does not solidify.
  • the heater 12 is operated prior to the supply of the molten metal 3 in order to preheat the wafer 1.
  • the heater 12 operates, for example, after placing the wafer 1 and before forming the processing chamber 4. In the formation state of the processing chamber 4 (in particular, after the supply of the molten metal 3), the heater 27 serves as a heat source, so the heater 12 may not necessarily be operated. Further, after the supply of the molten metal 3, the heater 12 may be stopped at the stage of solidifying the molten metal 3.
  • the chamber 30 accommodates the mounting unit 10, the molten metal supply unit 20, and the seal unit 22 therein.
  • the chamber 30 includes a cylindrical side partition 31 surrounding the periphery of the placement unit 10, the molten metal supply unit 20 and the seal unit 22, and an upper partition 32 closing an upper portion of the side partition 31. , And a lower partition wall 33 closing the lower part of the side partition wall 31.
  • the connection between the side partition 31 and the upper partition 32 and the lower partition 33 is sealed, and the inside of the chamber 30 is a sealed space.
  • the chamber 30 includes an openable / closable gate (gate valve) 34 for loading and unloading the wafer 1.
  • the gate 34 is an example of the “gateway” in the claims.
  • the gate 34 is provided on the side partition wall 31 and configured to locally open and close the inside of the chamber 30. The connection between the gate 34 and the side partition 31 is sealed.
  • the size of the gate 34 can be a minimum that the wafer 1 can be inserted and removed, and it is possible to suppress the flow of gas with the outside even when the gate 34 is open.
  • the chamber 30 is configured such that the wafer 1 can be taken in and out while maintaining the inside in a predetermined atmosphere state.
  • the metal filling apparatus 100 is equipped with the vacuum pump 41 which exhausts the inside of the chamber 30 and pressure-reduces.
  • the vacuum pump 41 is an example of the "pressure reduction unit" in the claims.
  • the vacuum pump 41 is connected to the inside of the chamber 30 via gas pipes 42 a and 42 b penetrating the side partition 31 to the inside.
  • the vacuum pump 41 can exhaust the gas in the chamber 30 to reduce the pressure.
  • a control valve 43 is provided between the vacuum pump 41 and the chamber 30. By controlling the opening and closing of the control valve 43 and the operation of the vacuum pump 41 by the control unit 50, it is possible to reduce the pressure in the chamber 30 to a substantially vacuum state.
  • the metal filling apparatus 100 is configured such that the processing chamber 4 is formed in a state where the inside of the chamber 30 is depressurized by the vacuum pump 41. Depressurization is generally performed to a vacuum state.
  • the gas supply unit 40 and the vacuum pump 41 By providing the gas supply unit 40 and the vacuum pump 41, it is possible to put the inside of the chamber 30 into an inert gas atmosphere or a substantially vacuum reduced state also when the wafer 1 is taken in and out.
  • the transfer path connected to the gate 34 is, for example, under the atmospheric environment, by mixing the inside of the chamber 30 with an inert gas atmosphere at a pressure equal to or higher than the atmospheric pressure, mixing of the air into the chamber 30 is suppressed, and melting is performed. Oxidation of the molten metal 3 or the like remaining on the facing surface 21 of the metal supply unit 20 is suppressed.
  • the transfer path is in a vacuum reduced pressure state, the inside of the chamber 30 is brought into the same reduced pressure state.
  • the gas supply unit 40 is connected to the inside of the chamber 30 via gas pipes 42a and 42c.
  • the gas supply unit 40 can pressurize the inert gas such as nitrogen gas into the chamber 30. Thereby, the inside of the chamber 30 can be pressurized.
  • the opening and closing of the control valve 43 and the operation of the gas supply unit 40 are controlled by the control unit 50 so that the molten metal 3 supplied on the surface 1a of the wafer 1 is pressurized with gas. It is configured.
  • the control unit 50 is configured to perform control to cause the sealing unit 22 and the surface 1 a of the wafer 1 to be separated and to open the processing chamber 4 by lowering the mounting unit 10 by the driving unit 51.
  • the metal filling apparatus 100 is operated by the gas supplied from the gas supply unit 40 in a state where the processing chamber 4 is opened in the chamber 30.
  • the molten metal 3 is configured to be pressurized.
  • the timing to start pressurization in the chamber 30 by the gas supply unit 40 may be before or after the processing chamber 4 is opened, but preferably, the metal filling apparatus 100 uses the gas supplied from the gas supply unit 40.
  • the processing chamber 4 is configured to be opened with the inside of the chamber 30 previously controlled to a predetermined atmosphere. In the first embodiment, the inside of the chamber 30 is maintained pressurized by the gas by the gas supply unit 40 before the processing chamber 4 is opened. In this case, since the processing chamber 4 is sealed, the gas pressure does not act directly on the molten metal 3. Then, at the same time as the processing chamber 4 is opened, pressurization with the gas of the molten metal 3 is started.
  • the metal filling apparatus 100 controls the inside of the chamber 30 to a predetermined atmosphere in advance by the gas supplied from the gas supply unit 40 and sets the pressure in the processing chamber 4 higher than the pressure in the chamber 30. Is configured to be open. As a result, the pressure in the processing chamber 4 becomes equal to or higher than the pressure in the chamber 30 (outside of the processing chamber 4), so that the pressure difference between the inside and outside of the processing chamber 4 prevents the opening operation from being hindered.
  • the pressure in the processing chamber 4 at the time of opening is too low or too high compared to the pressure in the chamber 30 (outside of the processing chamber 4). This is because if the pressure difference is large, the molten metal 3 on the surface 1 a of the wafer 1 may be corrugated or moved by an impact generated with the pressure fluctuation at the time of release. Further, at the time of opening the processing chamber 4, the volume in the processing chamber 4 increases due to the seal portion 22 returning to the natural state from the compression state, etc., so the pressure in the processing chamber 4 decreases with the volume increase. There is a tendency. Therefore, by pressurizing the inside of the processing chamber 4 toward the opening timing of the processing chamber 4, it is possible to compensate for the pressure drop in the processing chamber 4 due to the opening.
  • the internal pressure of the processing chamber 4 at the time of release be increased to a substantially constant value or slightly equal to the external pressure. Thereby, the pressure fluctuation at the time of release of the processing chamber 4 can be suppressed while facilitating the opening of the processing chamber 4.
  • a method of pressurizing the inside of the processing chamber 4 after the molten metal 3 is supplied into the processing chamber 4, a method of applying a supply pressure by supplying (pouring out) the molten metal 3 through the supply port 23 There is.
  • the inside of the processing chamber 4 can also be mechanically pressurized by moving the valve body 26a toward the supply port 23 in the introduction unit 25.
  • a method of feeding a pressurizing gas into the processing chamber 4 may be used (see FIG. 11).
  • a method of mechanically reducing the volume of the processing chamber 4 by deforming or moving a part of the facing surface 21 or the like is possible.
  • the metal filling apparatus 100 is configured such that the processing chamber 4 is opened before solidification of the molten metal 3 in the processing chamber 4 is completed.
  • the processing chamber 4 is released in the state of a complete liquid phase of the molten metal 3 or an incompletely solidified state in which the molten metal 3 is partially (locally) solidified.
  • the metal filling apparatus 100 is configured such that the molten metal 3 on the wafer 1 is cooled based on the opening of the processing chamber 4.
  • Opening of the processing chamber 4 is sufficient if a part of the seal part 22 is separated from the surface 1 a of the wafer 1 to release the air tightness, and a part of the molten metal supply part 20 (facing surface 21) and the wafer 1 It may be in a state in contact with the molten metal 3. However, in a state where the facing surface 21 and the molten metal 3 on the wafer 1 are in contact with each other, the heater 27 of the molten metal supply unit 20 serves as a heat source, and the heat from the heater 27 is also transmitted to the molten metal 3 on the wafer 1. In the present embodiment, for example, when the processing chamber 4 is opened, the wafer 1 and the molten metal 3 are separated from the molten metal supply unit 20.
  • the molten metal 3 on the wafer 1 is cooled based on the fact that the wafer 1 is separated from the molten metal supply unit 20 and the processing chamber 4 is opened. Thereby, since the heat transfer from the heater 27 is suppressed, the cooling (temperature reduction) can be advanced promptly.
  • the placement unit 10 includes a cooling unit 13 (see FIG. 2) for cooling the molten metal 3 on the wafer 1 in order to promote the cooling of the molten metal 3.
  • the cooling unit 13 is built in the mounting unit 10, and is configured by a heat pump using a refrigerant pipe through which a refrigerant flows, a thermoelectric element such as a Peltier element, or the like.
  • the cooling operation of the cooling unit 13 is controlled by the control unit 50.
  • the cooling unit 13 may be attached to the outer surface of the placement unit 10, and may be a heat sink attached to the surface of the placement unit 10, for example.
  • the processing chamber 4 is formed by the facing surface 21, the seal portion 22, and the surface 1 a of the wafer 1, the distance D between the facing surface 21 and the surface 1 a of the wafer 1 is adjusted By adjusting the amount of compression of the seal portion 22, it is possible to minimize the volume of the processing chamber 4 (that is, the amount of the molten metal 3). Therefore, by making the volume of the processing chamber 4 sufficiently small, the molten metal 3 on the surface 1 a of the wafer 1 flows out to the outside of the wafer 1 (on the mounting portion 10) or the like when the processing chamber 4 is opened. Is avoidable.
  • the wettability (affinity) with the molten metal 3 is relatively low at the surface 1 a of the wafer 1
  • the interface of the molten metal 3 is formed at the boundary between the relatively high wettability region (treated region 1b) and the relatively low wettability region (peripheral region 1c). Flow can be suppressed.
  • wetting or high wettability
  • the angle (contact angle) between the liquid surface (the surface of the molten metal 3) and the solid surface (the surface 1a of the wafer 1) is less than 90 degrees.
  • the contact angle is preferably less than 30 degrees.
  • the term “flicking (or low wettability)” refers to a state in which the contact angle is 90 degrees or more.
  • the surrounding area 1c is illustrated with hatching.
  • the processing area 1b is disposed on the inner side of the portion of the surface 1a in contact with the seal portion 22, and the surrounding area 1c is disposed on the outer side of the portion of the surface 1a in contact with the seal portion 22. It is annularly formed to surround the
  • the processing area 1 b disposed inside the seal portion 22 is subjected to a process for improving the wettability with the molten metal 3, whereby the peripheral area 1 c outside the processing area 1 b is The wettability is relatively low.
  • the process of improving the wettability is, for example, a film forming process in which the processing region 1b is coated with a material (for example, Cu, Au, etc.) having higher wettability with the molten metal 3 than the base material (silicon), plasma, etc.
  • These processes include removing the surface oxide of the wafer 1 and activating the surface state.
  • the peripheral area 1 c outside the processing area 1 b may be subjected to a process for reducing the wettability.
  • the process for reducing the wettability is, for example, a film forming process in which the surrounding area 1 c is coated with a material having a lower wettability to the molten metal 3 than the base material, or a process for oxidizing the surface of the wafer 1. Both the process of improving the wettability of the processing area 1b and the process of reducing the wettability of the surrounding area 1c may be performed.
  • the metal filling apparatus 100 performs the process corresponding to step S4 of FIG. Each step is performed by a separate device, and the wafer 1 is transferred between the devices by a transfer robot not shown.
  • step S1 a minute space 2 is formed on the wafer 1 by an etching process or the like.
  • the method of forming a silicon penetration electrode by metal filling with respect to the micro space 2 can be two methods of FIG. 5 and FIG. 6, for example.
  • first formation method of FIG. 5 (A) microspace 2 is formed as a non-penetrating recess from surface 1a of wafer 1, (B) microspace 2 is filled with molten metal 3 and conductor metal 5 is formed. (C) A method of forming the through electrode by removing the opposite surface 1d where the micro space 2 is not opened until the conductor metal 5 is exposed.
  • step S1 the minute space 2 is formed as a non-penetrating recess.
  • the wiring portion 6 connected to the silicon through electrode is formed in advance on the opposite surface 1 d of the wafer 1, and (A) reaches from the surface 1 a of the wafer 1 to the wiring portion 6
  • a minute space 2 is formed as a through hole, and in a state where (B) the opposite surface 1d side is attached to a support substrate 7, the minute space 2 is filled with the molten metal 3 to form a conductor metal 5;
  • the substrate 7 is removed to form a connection structure between the conductor metal 5 and the wiring portion 6.
  • the minute space 2 is formed as a through hole reaching from the surface 1a to the wiring portion 6.
  • step S2 a film forming process of a material (such as Cu) having high wettability with the molten metal 3 is performed on the processing region 1b of the wafer 1 by plating or the like.
  • the peripheral region 1c of the wafer 1 is excluded from the processing and is not deposited.
  • the surface 1a of the wafer 1 is divided into a processing region 1b having relatively high wettability with the molten metal 3 and a surrounding region 1c with low wettability with the molten metal 3 Be done.
  • step S3 the oxide on the surface 1a of the wafer 1 is removed by the cleaning step.
  • the cleaning process is performed when the wafer 1 is transported in the atmosphere. In the case where the wafer 1 is transported in a substantially vacuum continuously from Step S2, the formation and adhesion of the surface oxide are suppressed, and the cleaning step is unnecessary.
  • step S4 the metal filling apparatus 100 performs a filling process of the molten metal 3 in the minute space 2 of the surface 1a of the wafer 1.
  • the contents of the metal filling process (the operation of the metal filling apparatus 100) will be described later.
  • the filled and solidified conductor metal 5 is formed in the part of the minute space 2 of the wafer 1.
  • step S5 the surface 1a of the wafer 1 is polished by mechanical polishing such as CMP (chemical mechanical polishing) or a polisher, and the residue of the molten metal 3 solidified on the surface 1a is removed. Thereafter, in the case of the first formation method of FIG. 5, the opposite surface 1d is removed until the conductive metal 5 is exposed (see FIG. 5C), and a silicon through electrode is formed. In the second method of FIG. 6, through silicon electrodes are already formed, and the support substrate 7 is removed from the wafer 1 (see FIG. 6C).
  • CMP chemical mechanical polishing
  • FIG. 8 shows the flow of processing when the loading and unloading of the wafer 1 into and from the metal filling apparatus 100 is performed under the atmospheric environment. Operation control of the metal filling apparatus 100 is controlled by the control unit 50. In addition, about each part of the metal filling apparatus 100, it shall refer to FIG. 1 and FIG.
  • step S11 the gate 34 is opened under the control of the control unit 50, and the wafer 1 is carried into the chamber 30.
  • the wafer 1 passes through the gate 34 and is mounted on the mounting surface 11 of the mounting unit 10.
  • step S12 the control unit 50 closes the gate 34.
  • the inside of the chamber 30 is airtight.
  • step S13 the control unit 50 controls the vacuum pump 41 and the control valve 43 to evacuate the chamber 30 and reduce the pressure to a substantially vacuum state.
  • step S ⁇ b> 14 the control unit 50 controls the drive unit 51 to form the processing chamber 4. That is, the control unit 50 moves the mounting unit 10 toward the molten metal supply unit 20 and brings the seal unit 22 into contact with the surface 1 a of the wafer 1 to form the processing chamber 4.
  • step S ⁇ b> 15 the control unit 50 opens the filling valve 26 (valve element 26 a) and operates the metal supply pump 52 to supply the molten metal 3 to the processing chamber 4. Thereby, the molten metal 3 is supplied to the minute space 2.
  • the heater 27 of the molten metal supply unit 20 is controlled so as to always operate during the filling process.
  • the heater 12 of the mounting unit 10 is controlled to operate at a predetermined timing between steps S11 to S14, and heats the wafer 1 on the mounting unit 10.
  • step S16 the control unit 50 controls the gas supply unit 40 and the control valve 43 to supply an inert gas into the chamber 30, and pressurize the chamber 30.
  • pressurization by gas is shown as step S16
  • the start timing of pressurization by gas is from step S14 when the processing chamber 4 is formed until the processing chamber 4 is opened (step S18). Any timing may be used.
  • the inside of the chamber 30 is pressurized by the gas supply unit 40 to a predetermined pressure before the processing chamber 4 is opened in step S18.
  • step S17 the control unit 50 closes the filling valve 26 (valve body 26a) to stop the supply of the molten metal 3 to the processing chamber 4.
  • step S ⁇ b> 18 the control unit 50 controls the drive unit 51 to open the processing chamber 4. That is, the control unit 50 moves the mounting unit 10 in a direction away from the molten metal supply unit 20 and separates the seal unit 22 from the front surface 1 a of the wafer 1 to process the molten metal 3 after supply.
  • Chamber 4 is opened in chamber 30.
  • the processing chamber 4 is opened at a predetermined timing before solidification of the molten metal 3 in the processing chamber 4 is completed. As shown in FIG. 4, the molten metal 3 forms an interface between the processing area 1b and the surrounding area 1c and remains in the processing area 1b.
  • the processing chamber 4 is opened, the molten metal 3 is pressurized by the gas supplied in advance from the gas supply unit 40 into the chamber 30.
  • the molten metal 3 is pushed into the minute space 2 by the pressure of the inert gas, and the generation of voids (voids) in the minute space 2 is suppressed.
  • step S19 the control unit 50 operates the cooling unit 13 to start cooling of the molten metal 3.
  • the control unit 50 controls the gas supply unit 40 so as to continue the pressurization of the molten metal 3 by the gas.
  • the molten metal 3 on the wafer 1 has its entire surface exposed in the chamber 30 pressurized with gas. Therefore, even when the molten metal 3 partially (locally) solidifies with cooling, pressure is applied to the solidified portion and the liquid phase portion not solidified, and the micro space 2 is sufficiently filled. Solidification (cooling) proceeds as it is. Thereafter, the control unit 50 stands by until the temperature of the molten metal 3 decreases to the solidus temperature or less, and completes the solidification of the molten metal 3. The cooling operation of the cooling unit 13 is stopped after completion of solidification.
  • step S20 the control unit 50 controls the gas supply unit 40 and the control valve 43 to normalize the pressure in the chamber 30 (a pressure substantially the same as the external environment of the chamber 30). Return to).
  • step S21 the control unit 50 opens the gate 34.
  • the wafer 1 is carried out of the chamber 30.
  • the inside of the chamber 30 is maintained in an inert gas atmosphere, and the pressure is substantially the same as that of the external environment, so that the mixing of the air into the chamber (the oxidation of the metal attached to the facing surface 21) is suppressed.
  • the metal filling processing operation of the metal filling apparatus 100 is performed.
  • the operation involved in the carrying in and out differs from that in FIG. Specifically, the evacuation in step S13 is performed prior to the gate opening in step S11. Similarly, in place of the process of returning the inside of the chamber 30 to the normal pressure in step S20, the same vacuum evacuation process as in step S13 is performed. That is, when the wafer 1 is transferred in and out, the gate 34 is opened in a state where the inside of the chamber 30 is in a substantially vacuum reduced pressure environment equivalent to the outside.
  • the processing chamber 4 is formed by the surface 1 a and the molten metal 3 is supplied into the processing chamber 4 through the supply port 23 by the molten metal supply unit 20 so that the molten metal 3 is filled in the minute space 2.
  • the metal filling apparatus 100 is configured as follows. Thereby, the molten metal 3 is supplied into the processing chamber 4, and the film-like molten metal 3 on the surface 1 a of the wafer 1 can be pressurized by supplying the gas into the chamber 30.
  • the molten portion of the liquid phase other than the solidified portion can be reliably pressurized by the gas pressure. Therefore, pressurization to the molten metal 3 in the solidification process can be maintained.
  • the wafer 1 the mounting unit 10 on which the wafer 1 is mounted
  • the molten metal supply unit 20, and the seal unit 22 constituting the processing chamber 4 are accommodated in the airtight chamber 30, the processing chamber 4 is completely completed. Even when open, control of the atmosphere and pressure in the chamber 30 can be freely performed. As a result, the atmosphere and pressure around the wafer 1 can be controlled even when loading and unloading the wafer 1.
  • the metal filling apparatus 100 of the first embodiment it is possible to maintain the pressurization to the molten metal 3 in the solidification process, and also when the wafer 1 is carried in or out, the periphery of the wafer 1 Control of the atmosphere and pressure of
  • the molten metal 3 wraps around and adheres to the opposite surface 1 d side of the wafer 1 as well. In addition to the above, it is necessary to remove the attached metal on the opposite surface 1d side.
  • the processing chamber 4 is formed using the front surface 1a of the wafer 1, the molten metal 3 is prevented from coming around to the opposite surface (rear surface) 1d side of the wafer 1, The removal process of the adhesion metal on the side 1 d becomes unnecessary.
  • the metal filling apparatus 100 is configured such that the molten metal 3 is pressurized. Thereby, the molten metal 3 can be easily pressurized by the gas only by opening the processing chamber 4. Further, in the first embodiment, the volume of the processing chamber 4 can be minimized by the facing surface 21 of the molten metal supply unit 20, the seal portion 22 provided on the facing surface 21, and the surface 1a of the wafer 1. It is possible. Therefore, even if the molten metal 3 is supplied into the processing chamber 4 and then the processing chamber 4 is opened, it is possible to suppress the molten metal 3 from flowing and leaking to the periphery of the wafer 1.
  • the processing chamber 4 is opened in a state where the inside of the chamber 30 is controlled to a predetermined atmosphere in advance by the gas supplied from the gas supply unit 40 as described above. Configure as.
  • pressurization of the molten metal 3 by the gas can be started simultaneously with the opening of the processing chamber 4. It can be shortened.
  • the metal filling device 100 controls the inside of the chamber 30 to a predetermined atmosphere in advance by the gas supplied from the gas supply unit 40, and the pressure in the processing chamber 4 is a chamber.
  • the processing chamber 4 is configured to be opened in a state in which the pressure is higher than the pressure in 30.
  • the processing chamber 4 can be opened in a state where the pressure inside the processing chamber 4 is equal to or higher than the pressure outside the processing chamber 4 (inside the chamber 30), so the processing chamber 4 can be opened easily and smoothly.
  • the internal pressure of the processing chamber 4 at the time of release is increased by a substantially constant value or slightly equal to the pressure of the outside (chamber 30)
  • the pressure drop accompanying the volume increase in the processing chamber 4 is suppressed. While facilitating the opening of the processing chamber 4, it is possible to suppress pressure fluctuation when the processing chamber 4 is opened.
  • the metal filling apparatus 100 is configured such that the processing chamber 4 is opened before solidification of the molten metal 3 in the processing chamber 4 is completed.
  • the molten metal 3 in the liquid phase on the wafer 1 can be solidified in a pressurized state by the gas, the occurrence of filling defects such as voids can be effectively suppressed.
  • the molten metal supply unit 20 is provided with the heater 27 for heating the molten metal 3. Then, the metal filling apparatus 100 is configured such that the molten metal 3 on the wafer 1 is cooled based on the fact that the wafer 1 is separated from the molten metal supply unit 20 and the processing chamber 4 is opened. Thereby, it can be avoided that the molten metal 3 is solidified on the side of the molten metal supply unit 20 (supply port 23) by the heater 27. Moreover, since the molten metal supply unit 20 (facing surface 21) side serves as a heat source in the state where the processing chamber 4 is formed, the wafer 1 is separated from the molten metal supply unit 20 serving as a heat source when the processing chamber 4 is opened. Thus, the cooling can be performed in a state where the heat capacity on the wafer 1 side is minimized, and the molten metal 3 on the wafer 1 can be solidified efficiently.
  • the mounting unit 10 is provided with the cooling unit 13 for cooling the molten metal 3 on the wafer 1.
  • the molten metal 3 on the wafer 1 is solidified more efficiently by the cooling unit 13 provided in the mounting unit 10.
  • the metal to be supplied is not repeatedly melted and solidified every processing, so that processing time can be shortened and material deterioration can be suppressed.
  • the mounting unit 10 is provided with the heater 12 for heating the wafer 1 on the mounting unit 10.
  • the wafer 12 on the mounting unit 10 is rapidly heated in advance (preheated) by the heater 12 provided on the mounting unit 10 so that the molten metal 3 does not solidify on the wafer 1 )can do.
  • the processing time of the filling process can be shortened.
  • the drive unit 51 that moves at least one of the placement unit 10 and the molten metal supply unit 20 in the direction (vertical direction) to move close to or away from each other
  • a control unit 50 is provided which performs control to cause the processing chamber 4 to be formed by bringing the portion 22 into contact with the wafer 1 on the mounting surface.
  • the molten metal 3 in the processing chamber 4 is mechanically pressurized. Will also be possible. In that case, the occurrence of filling defects such as voids can be effectively suppressed by mechanical pressure.
  • the metal supply pump 52 for supplying the molten metal 3 to the molten metal supply unit 20 is provided outside the chamber 30, and the metal supply pump 52 outside the chamber 30 and the chamber 30 are A supply pipe 53 is further provided to connect with the internal molten metal supply unit 20.
  • the molten metal 3 can be easily sent to the molten metal supply unit 20 in the airtight chamber 30.
  • the supply pressure can be applied to the molten metal 3 supplied from the molten metal supply unit 20 to the processing chamber 4 by the metal supply pump 52 and the supply pipe 53.
  • the minute space 2 can be effectively filled by the supply pressure, the occurrence of the filling defect can be effectively suppressed.
  • the introduction portion 25 of the molten metal 3 connected to the supply port 23 is provided inside the molten metal supply portion 20 and disposed in the introduction portion 25.
  • a valve body 26a configured to be able to open and close the supply port 23 by advancing and retracting.
  • the processing chamber 4 may be opened while the molten metal 3 is supplied to the processing chamber 4, or the mechanical pressure is processed by moving the valve body 26 a toward the supply port 23.
  • the processing chamber 4 may be opened while being applied to the chamber 4 side. In any case, the pressure difference between the inside and outside of the processing chamber 4 can be reduced, and the processing chamber 4 can be opened easily and smoothly.
  • the metal filling apparatus 100 is configured such that the processing chamber 4 is formed in a state in which the inside of the chamber 30 is depressurized by the vacuum pump 41.
  • the inside of the chamber 30 is pressurized by the gas supply unit 40 so that the molten metal 3 can be differentially filled in the minute space 2 It becomes.
  • the vacuum pump 41 can be provided in the chamber 30 outside the processing chamber 4, metal does not come in contact with the exhaust port (valve) as compared with the case where the vacuum exhaust port communicated with the processing chamber 4 is provided. It is possible to avoid the occurrence of air tightness due to biting of metal powder into the valve valve body and the like.
  • the chamber 30 is provided with the openable / closable gate 34 for loading and unloading the wafer 1.
  • the wafer 1 can be easily carried in and out while maintaining the inside of the chamber 30 in a desired atmosphere and pressure.
  • the inside of the chamber 30 to an inert gas atmosphere
  • the remaining portion of the molten metal 3 adhering to the facing surface 21 of the molten metal supply unit 20 when the wafer 1 is carried in and out is exposed to the outside air and oxidized. Etc. can be suppressed.
  • the metal filling apparatus 100 is connected to a vacuum deposition apparatus or the like so as to enable continuous vacuum conveyance, a configuration in which continuous processing is performed without being exposed to the air is also possible.
  • the wettability (affinity) to the molten metal 3 of the processing region 1 b including the minute space 2 in the surface of the wafer 1 is improved prior to the supply of the molten metal 3.
  • At least one of the treatment and the treatment for reducing the wettability of the peripheral region 1c of the surface of the wafer 1 outside the treatment region 1b to the molten metal 3 is performed.
  • the wettability of the processing area 1b can be made relatively high, and the wettability of the surrounding area 1c outside the processing area 1b can be made relatively low.
  • the molten metal 3 can be spread to the processing area 1b without pressing the molten metal 3 into the airtight space, and even when the processing chamber 4 is opened, the processing area 1b and the surrounding area 1c
  • the interface of the molten metal 3 is formed at the boundary of the molten metal 3 to prevent the molten metal 3 in the processing region 1b from spreading to the surrounding region 1c side, and the molten metal 3 can be effectively filled in the minute space 2.
  • the metal filling apparatus 200 by 2nd Embodiment is demonstrated.
  • the molten metal supply unit 20 is An example configured to be movable will be described.
  • the molten metal supply unit 20 is disposed above the mounting unit 10 (overlapping position in the upper and lower directions), and It is configured to be movable in the approaching or separating direction (vertical direction).
  • the metal filling apparatus 200 includes the drive unit 151 that moves the molten metal supply unit 20 in a direction (vertical direction) in which the molten metal supply unit 20 approaches or separates from the mounting unit 10.
  • the control unit 50 controls the drive unit 151 to lower the molten metal supply unit 20 to bring the seal unit 22 into contact with the wafer 1 on the mounting surface 11 to form the processing chamber 4.
  • the control unit 50 performs control to open the processing chamber 4 by raising the molten metal supply unit 20 by the drive unit 151.
  • the placement unit 10 is fixedly installed on the lower partition wall 33 of the chamber 30.
  • the placement unit 10 may be configured to be movable by the drive unit 51 in a direction (up and down direction) close to or away from the molten metal supply unit 20 as in the first embodiment. That is, the metal filling apparatus 200 may be provided with a drive unit 51 and a drive unit 151 for moving both the placement unit 10 and the molten metal supply unit 20 in the vertical direction.
  • the remaining structure of the second embodiment is similar to that of the aforementioned first embodiment.
  • the processing chamber 4 is formed by the facing surface 21, the seal unit 22, and the surface 1 a of the wafer 1.
  • the metal filling device 200 so that the molten metal 3 is supplied into the processing chamber 4 through the supply port 23, the pressurization to the molten metal 3 in the solidification process can be maintained. Also, the atmosphere and pressure around the wafer 1 can be controlled even when the wafer 1 is carried in and out.
  • a metal filling apparatus 300 in addition to the configurations of the first embodiment and the second embodiment, at least one of the molten metal supply unit 20 and the placement unit 10 can be moved in the direction parallel to the placement surface 11
  • An example configured in FIG. about the structure similar to the said 1st Embodiment and 2nd Embodiment among 3rd Embodiment, while attaching
  • the molten metal supply unit 20 and the placement unit 10 is configured to be movable in a direction (horizontal direction) substantially parallel to the placement surface 11.
  • the placement unit 10 is configured to be movable in a direction (horizontal direction) substantially parallel to the placement surface 11.
  • the molten metal supply unit 20 may be movable in a generally horizontal direction, or both the molten metal supply unit 20 and the placement unit 10 may be movable in a generally horizontal direction.
  • the metal filling apparatus 300 includes a drive unit 254 that moves the mounting unit 10 in a direction parallel to the mounting surface 11.
  • the driving unit 254 is configured by, for example, a two-axis moving mechanism that can move in two directions orthogonal to each other in a plane (horizontal plane) parallel to the mounting surface 11. Thereby, it is possible to change arbitrarily the relative position of mounting part 10 and molten metal supply part 20 in the horizontal direction.
  • the driving unit 254 may be a moving mechanism of one axis.
  • the placement unit 10 is movable in the horizontal direction by the drive unit 254, and is configured not to move in the vertical direction.
  • the molten metal supply unit 20 is disposed at a position above the mounting unit 10.
  • the molten metal supply unit 20 is movable in the vertical direction (a direction in which the placement unit 10 and the molten metal supply unit 20 approach or are separated from each other) by the drive unit 151 and is fixed so as not to move in the horizontal direction. Since the mounting unit 10 moves on the lower partition wall 33, the molten metal supply unit 20 and the metal supply pump 52 disposed outside the chamber 30 via the supply pipe 53 passing through the side partition wall 31. It is connected.
  • the diameter (area) of the facing surface 21 and the diameter of the seal portion 22 are formed to be smaller than the placement surface 11 (the wafer 1 placed on the placement surface 11).
  • the metal filling apparatus 300 causes the seal portion 22 to contact the surface 1 a of the wafer 1 at an arbitrary position on the surface 1 a of the wafer 1 by the horizontal movement of the mounting portion 10, and the opposing surface 21 and the seal portion 22
  • the surface 1 a of the wafer 1 is configured to form a local processing chamber 4 in a part of the surface 1 a of the wafer 1. Therefore, assuming that the outer diameter of the wafer 1 is the same as that of the first embodiment, in the third embodiment, the volume of the processing chamber 4 is smaller than that of the first embodiment.
  • the control unit 50 controls the driving unit 254 to horizontally move the mounting unit 10 to arrange the formation position of the minute space 2 on the surface 1 a of the wafer 1 at a position facing the facing surface 21 of the molten metal supply unit 20. I do. Then, the control unit 50 causes the molten metal supply unit 20 to be lowered by the drive unit 151 to bring the seal unit 22 and the wafer 1 on the mounting surface 11 into contact with each other, and a local processing chamber on the surface 1 a of the wafer 1. Control to form 4 is performed. Further, the control unit 50 performs control to open the processing chamber 4 by raising the molten metal supply unit 20 by the drive unit 151.
  • the remaining structure of the third embodiment is similar to that of the aforementioned first embodiment.
  • the processing chamber 4 is formed by the facing surface 21, the seal unit 22, and the surface 1 a of the wafer 1.
  • the metal filling device 300 so that the molten metal 3 is supplied into the processing chamber 4 through the supply port 23, the pressurization to the molten metal 3 in the solidification process can be maintained. Also, the atmosphere and pressure around the wafer 1 can be controlled even when the wafer 1 is carried in and out.
  • the placement unit 10 is configured to be movable in a direction (horizontal direction) parallel to the placement surface 11. As a result, it becomes possible to form a local processing chamber 4 at an arbitrary position on the surface 1 a of the wafer 1 (a position requiring the metal filling processing). As a result, the amount of use of the molten metal 3 can be further reduced as compared with the case where the processing chamber 4 is formed almost all over the surface 1 a of the wafer 1.
  • a metal filling apparatus 400 in addition to the configuration of the first embodiment, a second supply port (gas supply port 327) is provided on the facing surface 21 of the molten metal supply unit 320, and the inside of the processing chamber 4 is filled with gas.
  • a second supply port gas supply port 327
  • gas supply port 327 An example configured to be capable of being pressurized will be described.
  • omitted about the structure similar to the said 1st Embodiment among 4th Embodiment, while attaching
  • the molten metal supply unit 320 is provided on the opposing surface 21 in addition to the supply port 23 of the molten metal 3 provided on the opposing surface 21. It further includes a gas supply port 327 for pressurized gas.
  • the gas supply port 327 is connected to the gas supply unit 40 via a gas pipe 345 penetrating the side partition wall 31.
  • the metal filling apparatus 400 is configured to be able to independently pressurize the inside of the processing chamber 4 with gas via the gas supply port 327 of the molten metal supply unit 320.
  • the gas supply unit 40 is connected to the inside of the chamber 30 via the gas pipes 42 a and 42 c and the control valve 43, and the inside of the molten metal supply unit 320 via the gas pipes 42 c and 345 and the control valve 344. It is connected to (gas supply port 327).
  • the pressurizing gas supply unit 40 in the chamber 30 and the pressurizing gas supply unit 40 in the processing chamber 4 may be separately provided.
  • the gas supply port 327 is also connected to the vacuum pump 41 via the gas pipes 345, 42c and 42b, and the control valves 43 and 344, and the process chamber 4 is evacuated. It is also possible.
  • the molten metal supply unit 320 includes a gas valve 326 that switches between supply and stop of the pressurized gas.
  • the gas valve 326 is configured in the same manner as the filling valve 26 of the molten metal 3. That is, the molten metal supply unit 320 is disposed in the introduction unit 325 of the pressurized gas provided inside the molten metal supply unit 320 and connected to the gas supply port 327, and disposed in the introduction unit 325.
  • a valve body 326a configured to be able to move forward and backward to open and close the gas supply port 327.
  • the valve body 326a, together with the valve body drive portion 326b, constitutes a gas valve 326.
  • the valve body 326a can move vertically between the closed position closing the gas supply port 327 and the open position spaced upward from the gas supply port 327 by the valve drive unit 326b. is there.
  • the control unit 50 controls the gas chamber 326, the control valves 43 and 344, and the gas supply unit 40 (or the vacuum pump 41) to pressurize the inside of the processing chamber 4 with an inert gas, and generally controls the inside of the processing chamber 4 Control to reduce the pressure to a vacuum state.
  • the remaining structure of the fourth embodiment is similar to that of the aforementioned first embodiment.
  • the processing chamber 4 is formed by the facing surface 21, the seal unit 22, and the surface 1 a of the wafer 1.
  • the metal filling device 400 so that the molten metal 3 is supplied into the processing chamber 4 through the supply port 23, the pressurization to the molten metal 3 in the solidification process can be maintained. Also, the atmosphere and pressure around the wafer 1 can be controlled even when the wafer 1 is carried in and out.
  • the gas supply port 327 is provided on the facing surface 21, and the inside of the processing chamber 4 is also independently pressurized by the gas via the gas supply port 327.
  • the filling device 400 is configured.
  • the gas supply unit 40 pressurizes the inside of the processing chamber 4 with the inert gas, thereby more effectively suppressing the occurrence of the filling failure in the minute space 2. can do.
  • the molten metal supply unit 420 is provided to define a distance D between the facing surface 21 and the surface 1 a of the wafer 1.
  • An example in which the spacer portion 428 is provided will be described.
  • the configuration other than the molten metal supply unit 420 is the same as that of the first embodiment, and therefore, the same reference numerals as those of the first embodiment are given and the description thereof is omitted.
  • the molten metal supply portion 420 includes a spacer portion 428 for defining the distance D between the facing surface 21 and the surface 1 a of the wafer 1.
  • the spacer unit 428 is fixedly provided to the molten metal supply unit 420, and in the state where the processing chamber 4 is formed, the mounting unit 10 and the vertical direction (a direction in which the molten metal supply unit 420 and the mounting unit 10 face each other) Is placed in contact with the Specifically, the spacer portion 428 is an arrangement of the wafer 1 on the mounting surface 11 outside the seal portion 22 in the mounting portion 10 side end portion (lower portion) of the molten metal supply portion 420. It is provided in a position outside the position, and is formed in a columnar shape (protrusion shape) that protrudes toward the placement unit 10.
  • a plurality of spacer portions 428 may be provided around the seal portion 22 at equal angular intervals.
  • FIG. 13 shows an example in which three spacer portions 428 are arranged at an interval of about 120 degrees.
  • the amount of protrusion H of the spacer portion 428 to the mounting portion 10 side forms the processing chamber 4 in consideration of the thickness of the wafer 1 and the amount of deformation (amount of displacement) of the seal portion 22 for securing sealing performance.
  • the distance D between the front surface 1a of the wafer 1 and the facing surface 21 in the above state is set to be a predetermined amount.
  • the spacer portions 428 do not necessarily have to be formed to project from the facing surface 21.
  • the spacer portion 428 may be bent toward the mounting portion 10 side.
  • the spacer portion 428 does not have to be in contact with the mounting surface 11 and may be in contact with a dedicated contact surface provided on the mounting portion 10.
  • the spacer 428 may be provided on the mounting unit 10 side. In the case where the spacer portion 428 is provided on the mounting portion 10, as compared with the case where the spacer portion is provided on the molten metal supply portion side, there is an advantage that mold making of the configuration provided with the spacer portion 428 becomes easy and cleaning becomes easy. is there.
  • the remaining structure of the fifth embodiment is similar to that of the aforementioned first embodiment.
  • the molten metal supply portion 420 is provided with the spacer portion 428 for defining the distance D between the facing surface 21 and the surface 1 a of the wafer 1.
  • the configurations disclosed in the first to fifth embodiments may be combined with each other.
  • the molten metal supply part 320 of the fourth embodiment may be provided instead of the molten metal supply part 20.
  • the drive unit 151 of the second embodiment is provided in the metal filling apparatus 400 of the fourth embodiment to move the molten metal supply unit 320 closer to or away from the placement unit 10. It may be configured to move in a direction.
  • the molten metal supply unit 320 may be provided with the spacer unit 428 of the fifth embodiment.
  • the molten metal supply unit 20 is movable in the direction (vertical direction) in which the molten metal supply unit 20 approaches or separates from the mounting unit 10, and the mounting unit 10 is parallel to the mounting surface 11.
  • the present invention is not limited to this.
  • one of the placement unit 10 and the molten metal supply unit 20 may be movable in the horizontal and vertical three axis directions.
  • the molten metal supply unit 320 is provided with the supply port 23 for the molten metal 3 and the gas supply port 327 for the pressurized gas, but the present invention is limited to this. Absent.
  • a plurality of supply ports 23 of the molten metal 3 may be provided in the molten metal supply unit. Then, separate seal portions 22 may be provided so as to surround each supply port 23. In this case, a plurality of processing chambers 4 can be formed simultaneously.
  • the present invention is not limited to this.
  • the molten metal 3 may be supplied with the inside of the processing chamber 4 under a constant pressure of about atmospheric pressure without performing differential pressure filling.
  • the molten metal supply unit may be provided with an exhaust structure for exhausting the gas in the processing chamber 4 along with the supply of the molten metal 3.
  • the cooling unit 13 is operated after the processing chamber 4 is opened (after the wafer 1 is separated from the molten metal supply unit 20), the present invention is limited thereto. I can not. In the present invention, the cooling unit 13 may be operated before the processing chamber 4 is opened.
  • the process chamber 4 was open
  • the inside of the chamber 30 may be pressurized after the processing chamber 4 is opened.
  • the wettability to the molten metal 3 of the processing region 1 b is improved, or the wettability to the molten metal 3 of the outer peripheral region 1 c is reduced.
  • this invention is not limited to this. In the present invention, as long as the molten metal 3 is in a state of being wetted to the processing region 1b, it is not necessary to perform the process of improving or reducing the wettability.
  • the molten metal 3 is repelled and flowed on the surface 1 a or aggregated in an island shape.

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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

La présente invention concerne un dispositif de remplissage de métal pourvu d'unité de placement (10), d'une unité d'alimentation en métal fondu (20), d'une unité d'étanchéité (22), d'une chambre étanche à l'air (30) logeant l'unité de placement, l'unité d'alimentation en métal fondu, et l'unité d'étanchéité dans celle-ci, et une unité d'alimentation en gaz (40) qui fournit un gaz à l'intérieur de la chambre. Une chambre de traitement (4) est pourvue d'une surface opposée (21), de l'unité d'étanchéité et de la surface du sujet (1) à traiter, et un métal fondu (3) est fourni à l'intérieur de la chambre de traitement, et des espaces fins (2) sont remplis du métal fondu.
PCT/JP2017/005737 2016-03-10 2017-02-16 Dispositif de remplissage de métal et procédé de remplissage de métal WO2017154507A1 (fr)

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JP2016046919 2016-03-10

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CN113543527B (zh) * 2021-07-09 2022-12-30 广东工业大学 载板填孔工艺的填充基材选型方法及载板填孔工艺
CN116487293B (zh) * 2023-04-24 2024-04-12 湖北通格微电路科技有限公司 一种微孔填充装置及微孔填充方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011081202A1 (fr) * 2009-12-29 2011-07-07 キヤノンアネルバ株式会社 Procédé de fabrication d'un composant électronique, composant électronique, dispositif de traitement plasma, programme de commande et support d'enregistrement
JP2013075330A (ja) * 2011-09-14 2013-04-25 Sumitomo Precision Prod Co Ltd 金属充填装置
JP2013201163A (ja) * 2012-03-23 2013-10-03 Sumitomo Precision Prod Co Ltd 金属充填装置、金属充填方法
JP2014157863A (ja) * 2013-02-14 2014-08-28 Tokyo Electron Ltd 金属ペースト充填方法及び金属ペースト充填装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011081202A1 (fr) * 2009-12-29 2011-07-07 キヤノンアネルバ株式会社 Procédé de fabrication d'un composant électronique, composant électronique, dispositif de traitement plasma, programme de commande et support d'enregistrement
JP2013075330A (ja) * 2011-09-14 2013-04-25 Sumitomo Precision Prod Co Ltd 金属充填装置
JP2013201163A (ja) * 2012-03-23 2013-10-03 Sumitomo Precision Prod Co Ltd 金属充填装置、金属充填方法
JP2014157863A (ja) * 2013-02-14 2014-08-28 Tokyo Electron Ltd 金属ペースト充填方法及び金属ペースト充填装置

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