WO2017138372A1 - Dispositif d'imagerie à semi-conducteurs et dispositif électronique - Google Patents

Dispositif d'imagerie à semi-conducteurs et dispositif électronique Download PDF

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Publication number
WO2017138372A1
WO2017138372A1 PCT/JP2017/002885 JP2017002885W WO2017138372A1 WO 2017138372 A1 WO2017138372 A1 WO 2017138372A1 JP 2017002885 W JP2017002885 W JP 2017002885W WO 2017138372 A1 WO2017138372 A1 WO 2017138372A1
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WO
WIPO (PCT)
Prior art keywords
solid
pupil correction
imaging device
state imaging
derived
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PCT/JP2017/002885
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English (en)
Japanese (ja)
Inventor
拓郎 村瀬
壽史 若野
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ソニー株式会社
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Publication of WO2017138372A1 publication Critical patent/WO2017138372A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith

Definitions

  • the present technology relates to a solid-state imaging device and an electronic device, and more particularly, to a solid-state imaging device and an electronic device that can improve shading characteristics.
  • the shading characteristics are improved by changing the exit pupil correction amount of the on-chip lens in a concentric manner as represented by contour lines.
  • Patent Document 1 discloses a solid-state imaging device in which the exit pupil correction amount of an on-chip lens is changed to a concentric ellipse shape with contour lines. Thereby, also in the solid-state imaging device using an aspheric lens, the shading characteristics can be improved.
  • the present technology has been made in view of such circumstances, and is intended to improve shading characteristics in a solid-state imaging device having a shading distribution of an arbitrary shape.
  • a solid-state imaging device of the present technology includes a plurality of pixels arranged in an imaging region on a substrate and an on-chip microlens formed corresponding to each pixel, and an exit pupil correction amount of each of the on-chip microlenses Is represented by a two-dimensional distribution of a pupil correction function derived by interpolating a calculated correction amount calculated for a predetermined position on the imaging region with an interpolation function.
  • the pupil correction function can be derived using a predetermined coefficient set based on the imaging region.
  • the pupil correction function can be derived using the coefficient corresponding to the aspect ratio of the imaging region.
  • the pupil correction function can be derived using a coefficient corresponding to the change rate of the pupil correction amount in a plurality of directions from the optical center on the imaging region.
  • the image pickup area may have a plurality of optical centers, and the pupil correction function may be derived for each optical center.
  • pixels having different pixel pitches or pixel sizes may be arranged, and the pupil correction function may be derived using the coefficient corresponding to the pixel arrangement pattern.
  • the substrate is curved so that the imaging region side is concave, and the pupil correction function can be derived using the coefficient corresponding to the amount of warpage of the substrate.
  • the pupil correction function can be derived using the coefficient corresponding to the power supply or wiring on the substrate.
  • the pupil correction function can be derived using the coefficient corresponding to the heat distribution when the solid-state imaging device is driven.
  • the electronic device of the present technology includes a plurality of pixels arranged in an imaging region on a substrate and an on-chip microlens formed corresponding to each pixel, and an exit pupil correction amount of each of the on-chip microlenses is And a solid-state imaging device represented by a two-dimensional distribution of a pupil correction function derived by interpolating a calculation correction amount calculated for a predetermined position on the imaging region with an interpolation function.
  • the exit pupil correction amount of each on-chip microlens is a two-dimensional distribution of the pupil correction function derived by interpolating the calculated correction amount calculated for a predetermined position on the imaging region with the interpolation function. It is represented by
  • the exit pupil correction amount of an on-chip microlens (hereinafter simply referred to as a microlens) is increased from the center of the imaging region 11 toward the periphery.
  • the contour line 12 is changed in a concentric manner.
  • an aspherical lens is used as an optical lens.
  • the change in the incident angle with respect to the image height (corresponding to the distance from the center of the imaging region to the periphery) of the aspherical lens is not linear. Therefore, in the correction of the microlens position corresponding to the conventional spherical lens, the condensing position of the microlens and the light receiving portion of the pixel are misaligned, and the incident light is blocked by the light shielding film formed around the light receiving portion. The so-called “vignetting” occurs. As a result, shading deteriorates and sensitivity decreases.
  • Patent Document 1 As shown in FIG. 2, the exit pupil correction amount of the microlens with respect to the distance (corresponding to the image height) from the center to the periphery of the imaging region 11 is represented by a contour line 13. It has been proposed to change to a concentric ellipse.
  • the shading distribution in the imaging region 21 takes an arbitrary shape.
  • the correction amount cannot be locally optimized.
  • FIG. 4 is a cross-sectional view illustrating a structure of an embodiment of a solid-state imaging device to which the present technology is applied.
  • 4 is configured as a CCD (Charge Coupled Device) image sensor
  • the solid-state imaging device 31 may be configured as a CMOS (Complementary Metal Oxide Semiconductor) image sensor.
  • CCD Charge Coupled Device
  • CMOS Complementary Metal Oxide Semiconductor
  • a plurality of light receiving portions 33 constituting pixels are arranged in a matrix in an imaging region on a substrate 32 made of a silicon semiconductor, and a vertical transfer register having a CCD structure corresponding to each light receiving portion row. 34 is formed. Further, a color filter 36 and a microlens 37 are formed on the imaging region via a passivation film and a flattening film 35 (not shown).
  • the vertical transfer register 34 is configured by forming a transfer electrode 38 made of, for example, polycrystalline silicon on a transfer channel region formed on the surface of the substrate 32 through a gate insulating layer.
  • An interlayer insulating film 39 is formed on the surface of the substrate 32 including the transfer electrode 38.
  • a light shielding film 41 is formed on the interlayer insulating film 39 except for the portion corresponding to the light receiving portion 33. That is, an opening 41 ⁇ / b> A is formed in a portion corresponding to the light receiving portion 33 of the light shielding film 41.
  • the light shielding film 41 is formed of, for example, aluminum (Al) or tungsten (W).
  • the color filter 36 is formed as a Bayer array primary color filter including a red filter component 36R, a green filter component 36G, and a blue filter component 36B.
  • the microlenses 37 are formed so as to be arranged at positions where light is condensed on the corresponding light receiving portions 33.
  • incident light 46 is incident from the aperture point P of the diaphragm 45.
  • the imaging region is formed in a horizontally long shape.
  • the unit pixel is formed in a square shape, and the opening 41A of the light receiving portion 33 is formed in a vertically long rectangle.
  • the exit pupil correction amount of each microlens 37 formed corresponding to each pixel in the imaging region is set to an appropriate correction amount at each pixel position.
  • the exit pupil correction amount of each of the microlenses 37 is a pupil correction function 2 derived by interpolating a correction amount calculated for a predetermined pixel position in the imaging region with an interpolation function described later. It is represented by a pupil correction map that is a dimensional distribution.
  • step S1 a pixel output at a predetermined pixel position on the imaging region is acquired.
  • the actual pixel value of the target pixel is acquired as the pixel output, but incident characteristics (for example, incident angle data) at the pixel position of the target pixel are acquired. Also good.
  • step S2 the pupil correction amount required at each pixel position is calculated based on the pixel output at each pixel position.
  • step S3 the pupil correction function is derived by interpolating the calculated pupil correction amount at each pixel position with the interpolation function.
  • a cubic spline function is used as the interpolation function.
  • N cubic spline functions F (0) and F (1) for interpolating the pupil correction amount at each pixel position in a predetermined direction on the pixel plane corresponding to the imaging region.
  • F (2), F (3), ... F (N) are derived.
  • the pupil correction amount around the pixel position (x, y) on the xy plane representing the pixel plane is calculated using the derived cubic spline function. Then, the pupil correction amount I (x, y) at the pixel position (x, y) is calculated using bicubic interpolation.
  • a pupil correction function representing the pupil correction amount at an arbitrary pixel position on the imaging region is derived.
  • the more complex the pixel output distribution on the imaging area the more complicated the pupil correction function. Therefore, as will be described later, by using a predetermined coefficient set based on the imaging area, The correction function can be simplified and increased in accuracy.
  • step S4 a two-dimensional distribution on the xy plane is extracted from the derived pupil correction function to generate a pupil correction map.
  • the pupil correction map is generated as described above, the correction amount can be optimized locally. Therefore, in a solid-state imaging device having a shading distribution of an arbitrary shape, the shading characteristics are optimized. Can be improved. This also makes it possible to improve the degree of freedom in lens design.
  • Example of pupil correction map> Hereinafter, a specific example of the pupil correction map will be described.
  • FIG. 7 shows a first example of the pupil correction map.
  • the pupil correction function is derived by using a coefficient corresponding to the aspect ratio of the imaging region 51.
  • the exit pupil correction amount of the microlens with respect to the distance from the optical center to the periphery is changed to a horizontally long concentric rectangular shape represented by the contour line 61. Thereby, appropriate exit pupil correction can be performed for the pixels in the entire imaging region 51.
  • the solid-state imaging device 31 having the configuration of FIG. 7 is provided in a camera that captures a wide-angle 360 °, a camera that includes a fish-eye lens, and a medical camera that improves the sensitivity of the angle of view by making the best use of effective pixels.
  • the present invention can be applied to a solid-state imaging device.
  • FIG. 8 shows a second example of the pupil correction map.
  • the pupil correction function is obtained by using a coefficient corresponding to the change rate of the pupil correction amount in the three directions of the vertical direction, the horizontal direction, and the diagonal direction from the optical center on the imaging region 51. Is derived.
  • the exit pupil correction amount of the microlens with respect to the distance from the optical center to the periphery is represented by the contour line 62 and changes concentrically at different rates in three directions. Thereby, appropriate exit pupil correction can be performed for the pixels in the entire imaging region 51.
  • the solid-state imaging device 31 having the configuration of FIG. 8 can be applied to a solid-state imaging device provided in a sensing camera or the like in which the resolution and sensitivity in the diagonal direction of the imaging region are improved.
  • the pupil correction function is derived not only by the example of FIG. 8 but by using a coefficient corresponding to the change rate of the pupil correction amount in a plurality of predetermined directions from the optical center on the imaging region 51. Also good.
  • FIG. 9 shows a third example of the pupil correction map.
  • the solid-state imaging device 31 has four optical centers on the imaging region 51, and a pupil correction function is derived for each optical center.
  • the exit pupil correction amount of the microlens with respect to the distance from each optical center to the periphery is changed concentrically as indicated by the contour line 63. Thereby, appropriate exit pupil correction can be performed for the pixels in the entire imaging region 51.
  • the solid-state imaging device 31 having the configuration of FIG. 9 can be applied to a solid-state imaging device provided in a light field camera having a plurality of small lens arrays between the main lens and the imaging region 51.
  • FIG. 10 shows a fourth example of the pupil correction map.
  • pixels having different pixel pitches and pixel sizes are arranged in the imaging region 51, and a pupil correction function is derived using a coefficient corresponding to the arrangement pattern.
  • a pupil correction function is derived using a coefficient corresponding to the arrangement pattern.
  • a pupil correction map 64 is provided. Thereby, appropriate exit pupil correction can be performed for the pixels in the entire imaging region 51.
  • the solid-state imaging device 31 having the configuration of FIG. 10 can be applied to, for example, a solid-state imaging device for a low-profile module that compensates for a decrease in sensitivity around the angle of view with a pixel size.
  • FIG. 11 shows a fifth example of the pupil correction map.
  • the entire substrate 32 of the solid-state imaging device 31 is curved so that the imaging region 51 side is concave, and a pupil correction function is derived using a coefficient corresponding to the amount of warpage of the substrate 32. .
  • the exit pupil correction amount of the microlens with respect to the distance from the optical center to the periphery is changed concentrically as indicated by the contour line 65. Thereby, appropriate exit pupil correction can be performed for the pixels in the entire imaging region 51.
  • FIG. 12 shows a sixth example of the pupil correction map.
  • a pupil correction function is derived using a coefficient corresponding to the power supply and wiring.
  • the exit pupil correction amount of the microlens with respect to the distance from the position shifted from the optical center to the periphery changes in a non-concentric manner as indicated by the contour line 66. Thereby, appropriate exit pupil correction can be performed for the pixels in the entire imaging region 51.
  • the solid-state imaging device 31 having the configuration of FIG. 12 can be applied to a solid-state imaging device provided in a compound eye camera having a plurality of chips.
  • a pupil correction map as shown in FIG. 12 may be generated by deriving the pupil correction function using a coefficient corresponding to the heat distribution when the solid-state imaging device 31 is driven. .
  • FIG. 13 shows a seventh example of the pupil correction map.
  • a pupil correction function is derived according to a shading distribution having an arbitrary shape.
  • the pupil correction amount of the microlens is given by the pupil correction map 67. Thereby, appropriate exit pupil correction can be performed for the pixels in the entire imaging region 51.
  • the solid-state imaging device 31 having the configuration of FIG. 13 can be applied to a solid-state imaging device having a shading distribution of an arbitrary shape other than the above-described example. Furthermore, the above-described examples 1 to 6 may be applied in any combination.
  • the present technology can also be applied to a solid-state imaging device having an imaging region or a substrate having an arbitrary shape.
  • a Bayer array primary color filter is used.
  • any color filter such as a checkered array or a stripe array may be used.
  • the color filter is not limited to the primary color system, and the same effect can be obtained even in a complementary color system.
  • the curvature and / or the refractive index of the microlens is changed instead of changing the shift amount of the microlens as the change of the exit pupil correction amount of the microlens. May be.
  • changes in the microlens curvature and refractive index are represented by a pupil correction map, as in the above-described example.
  • the shift amount of the microlens may be changed, and the curvature and / or refractive index of the microlens may be changed.
  • the imaging apparatus refers to a camera system such as a digital still camera or a digital video camera, or an electronic apparatus having an imaging function such as a mobile phone.
  • a module-like form mounted on an electronic device that is, a camera module is used as an imaging device.
  • the electronic apparatus 200 shown in FIG. 14 includes an optical lens 201, a shutter device 202, a solid-state imaging device 203, a drive circuit 204, and a signal processing circuit 205.
  • FIG. 14 shows an embodiment in which the above-described solid-state imaging device 1 of the present technology is provided in an electronic apparatus (digital still camera) as the solid-state imaging device 203.
  • the optical lens 201 forms image light (incident light) from the subject on the imaging surface of the solid-state imaging device 203. Thereby, the signal charge is accumulated in the solid-state imaging device 203 for a certain period.
  • the shutter device 202 controls the light irradiation period and the light shielding period for the solid-state imaging device 203.
  • the drive circuit 204 supplies drive signals to the shutter device 202 and the solid-state imaging device 203.
  • the drive signal supplied to the shutter device 202 is a signal for controlling the shutter operation of the shutter device 202.
  • the drive signal supplied to the solid-state imaging device 203 is a signal for controlling the signal transfer operation of the solid-state imaging device 203.
  • the solid-state imaging device 203 performs signal transfer using a drive signal (timing signal) supplied from the drive circuit 204.
  • the signal processing circuit 205 performs various signal processing on the signal output from the solid-state imaging device 203.
  • the video signal subjected to the signal processing is stored in a storage medium such as a memory or output to a monitor.
  • the solid-state imaging device 203 can improve the shading characteristics. As a result, it is possible to provide an electronic device that can capture a high-quality image.
  • FIG. 15 is a diagram showing a usage example of the image sensor described above.
  • the image sensor described above can be used in various cases for sensing light such as visible light, infrared light, ultraviolet light, and X-ray as follows.
  • Devices for taking images for viewing such as digital cameras and mobile devices with camera functions
  • Devices used for traffic such as in-vehicle sensors that capture the back, surroundings, and interiors of vehicles, surveillance cameras that monitor traveling vehicles and roads, and ranging sensors that measure distances between vehicles, etc.
  • Equipment used for home appliances such as TVs, refrigerators, air conditioners, etc. to take pictures and operate the equipment according to the gestures ⁇ Endoscopes, equipment that performs blood vessel photography by receiving infrared light, etc.
  • Equipment used for medical and health care ⁇ Security equipment such as security surveillance cameras and personal authentication cameras ⁇ Skin measuring instrument for photographing skin and scalp photography Such as a microscope to do beauty Equipment used for sports such as action cameras and wearable cameras for sports applications etc.
  • Equipment used for agriculture such as cameras for monitoring the condition of fields and crops
  • this technique can take the following structures.
  • (1) A plurality of pixels arranged in an imaging region on the substrate; An on-chip microlens formed corresponding to each pixel, The exit pupil correction amount of each of the on-chip microlenses is represented by a two-dimensional distribution of a pupil correction function derived by interpolating a calculated correction amount calculated for a predetermined position on the imaging region with an interpolation function.
  • Solid-state imaging device. (2) The solid-state imaging device according to (1), wherein the pupil correction function is derived using a predetermined coefficient set based on the imaging region.
  • (3) The solid-state imaging device according to (2), wherein the pupil correction function is derived using the coefficient corresponding to an aspect ratio of the imaging region.
  • the substrate is curved so that the imaging region side is concave
  • the said pupil correction function is derived
  • the solid-state imaging device in any one of (7).
  • solid-state imaging device 32 substrate, 33 light-receiving unit, 36 color filter, 37 on-chip microlens, 51 imaging area, 200 electronic device, 203 solid-state imaging device

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Studio Devices (AREA)

Abstract

La présente technique se rapporte à un dispositif d'imagerie à semi-conducteurs et à un dispositif électronique qui permettent une amélioration de caractéristiques d'ombrage. Ce dispositif d'imagerie à semi-conducteurs est pourvu d'une pluralité de pixels disposés en matrice dans une zone d'imagerie sur un substrat, et d'une microlentille sur puce formée de manière à correspondre à chacun des pixels. La quantité de correction de la pupille de sortie de chaque microlentille sur puce respective est exprimée à l'aide d'une distribution bidimensionnelle d'une fonction de correction de pupille, qui est dérivée en utilisant une fonction d'interpolation pour interpoler une quantité de correction calculée qui a été calculée pour une position prescrite sur la zone d'imagerie. La présente technique peut être appliquée à un capteur d'images CMOS ou à un capteur d'images CCD.
PCT/JP2017/002885 2016-02-10 2017-01-27 Dispositif d'imagerie à semi-conducteurs et dispositif électronique WO2017138372A1 (fr)

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JP2016-023784 2016-02-10

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020080130A1 (fr) * 2018-10-19 2020-04-23 ソニーセミコンダクタソリューションズ株式会社 Dispositif d'imagerie à semi-conducteurs et appareil électronique

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JP2005249846A (ja) * 2004-03-01 2005-09-15 Sony Corp 撮像装置及びその製造方法
JP2006012910A (ja) * 2004-06-22 2006-01-12 Sony Corp 固体撮像装置
JP2006121613A (ja) * 2004-10-25 2006-05-11 Konica Minolta Photo Imaging Inc 撮像装置
JP2006134157A (ja) * 2004-11-08 2006-05-25 Fuji Photo Film Co Ltd シェーディング補正装置、シェーディング補正値演算装置及び撮像装置
JP2006215028A (ja) * 1996-02-22 2006-08-17 Canon Inc 光電変換装置
JP2014072471A (ja) * 2012-10-01 2014-04-21 Sony Corp 固体撮像装置および製造方法、並びに電子機器
WO2016009707A1 (fr) * 2014-07-16 2016-01-21 ソニー株式会社 Dispositif d'imagerie d'œil composé
JP2016015430A (ja) * 2014-07-03 2016-01-28 ソニー株式会社 固体撮像素子および電子機器

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006215028A (ja) * 1996-02-22 2006-08-17 Canon Inc 光電変換装置
JP2005249846A (ja) * 2004-03-01 2005-09-15 Sony Corp 撮像装置及びその製造方法
JP2006012910A (ja) * 2004-06-22 2006-01-12 Sony Corp 固体撮像装置
JP2006121613A (ja) * 2004-10-25 2006-05-11 Konica Minolta Photo Imaging Inc 撮像装置
JP2006134157A (ja) * 2004-11-08 2006-05-25 Fuji Photo Film Co Ltd シェーディング補正装置、シェーディング補正値演算装置及び撮像装置
JP2014072471A (ja) * 2012-10-01 2014-04-21 Sony Corp 固体撮像装置および製造方法、並びに電子機器
JP2016015430A (ja) * 2014-07-03 2016-01-28 ソニー株式会社 固体撮像素子および電子機器
WO2016009707A1 (fr) * 2014-07-16 2016-01-21 ソニー株式会社 Dispositif d'imagerie d'œil composé

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020080130A1 (fr) * 2018-10-19 2020-04-23 ソニーセミコンダクタソリューションズ株式会社 Dispositif d'imagerie à semi-conducteurs et appareil électronique

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