WO2017138372A1

WO2017138372A1 - Solid-state imaging device and electronic device

Info

Publication number: WO2017138372A1
Application number: PCT/JP2017/002885
Authority: WO
Inventors: 拓郎村瀬; 壽史若野
Original assignee: ソニー株式会社
Priority date: 2016-02-10
Filing date: 2017-01-27
Publication date: 2017-08-17

Abstract

The present technique pertains to a solid-state imaging device and an electronic device which enable improvement of shading characteristics. This solid-state imaging device is provided with a plurality of pixels arrayed in an imaging area on a substrate, and an on-chip microlens formed corresponding to each of the pixels. The exit pupil correction amount of each respective on-chip microlens is expressed using a two-dimensional distribution of a pupil correction function, which is derived by using an interpolation function to interpolate a calculated correction amount calculated for a prescribed position on the imaging area. The present technique can be applied to a CMOS image sensor or a CCD image sensor.

Description

Solid-state imaging device and electronic apparatus

The present technology relates to a solid-state imaging device and an electronic device, and more particularly, to a solid-state imaging device and an electronic device that can improve shading characteristics.

In recent years, there has been a demand for further miniaturization of camera modules mounted on mobile terminals such as mobile phones. Accordingly, in such a camera module, the distance (exit pupil distance) between the lens and the imaging surface tends to be short, and the amount of light incident on the center pixel of the imaging surface and the peripheral pixel are reduced. The difference from the amount of incident light becomes large. This leads to the occurrence of uneven sensitivity in the image called shading.

On the other hand, shading characteristics are improved by using pupil correction technology.

For example, in a solid-state imaging device using a conventional spherical lens, the shading characteristics are improved by changing the exit pupil correction amount of the on-chip lens in a concentric manner as represented by contour lines.

Further, Patent Document 1 discloses a solid-state imaging device in which the exit pupil correction amount of an on-chip lens is changed to a concentric ellipse shape with contour lines. Thereby, also in the solid-state imaging device using an aspheric lens, the shading characteristics can be improved.

JP 2006-12910 A

However, when the shading distribution in the imaging region is not concentric or elliptical, the above configuration cannot improve the shading characteristics locally. In other words, in a solid-state imaging device having a shading distribution of an arbitrary shape, the shading characteristics cannot be optimally improved.

The present technology has been made in view of such circumstances, and is intended to improve shading characteristics in a solid-state imaging device having a shading distribution of an arbitrary shape.

A solid-state imaging device of the present technology includes a plurality of pixels arranged in an imaging region on a substrate and an on-chip microlens formed corresponding to each pixel, and an exit pupil correction amount of each of the on-chip microlenses Is represented by a two-dimensional distribution of a pupil correction function derived by interpolating a calculated correction amount calculated for a predetermined position on the imaging region with an interpolation function.

The pupil correction function can be derived using a predetermined coefficient set based on the imaging region.

The pupil correction function can be derived using the coefficient corresponding to the aspect ratio of the imaging region.

The pupil correction function can be derived using a coefficient corresponding to the change rate of the pupil correction amount in a plurality of directions from the optical center on the imaging region.

The image pickup area may have a plurality of optical centers, and the pupil correction function may be derived for each optical center.

In the imaging region, pixels having different pixel pitches or pixel sizes may be arranged, and the pupil correction function may be derived using the coefficient corresponding to the pixel arrangement pattern.

The substrate is curved so that the imaging region side is concave, and the pupil correction function can be derived using the coefficient corresponding to the amount of warpage of the substrate.

The pupil correction function can be derived using the coefficient corresponding to the power supply or wiring on the substrate.

The pupil correction function can be derived using the coefficient corresponding to the heat distribution when the solid-state imaging device is driven.

The electronic device of the present technology includes a plurality of pixels arranged in an imaging region on a substrate and an on-chip microlens formed corresponding to each pixel, and an exit pupil correction amount of each of the on-chip microlenses is And a solid-state imaging device represented by a two-dimensional distribution of a pupil correction function derived by interpolating a calculation correction amount calculated for a predetermined position on the imaging region with an interpolation function.

In the present technology, the exit pupil correction amount of each on-chip microlens is a two-dimensional distribution of the pupil correction function derived by interpolating the calculated correction amount calculated for a predetermined position on the imaging region with the interpolation function. It is represented by

According to the present technology, it is possible to improve shading characteristics in a solid-state imaging device having a shading distribution of an arbitrary shape.

It is a figure explaining the conventional exit pupil correction. It is a figure explaining the conventional exit pupil correction. It is a figure which shows the shading distribution of arbitrary shapes. It is sectional drawing which shows the structure of the solid-state imaging device of this technique. It is a flowchart explaining a pupil correction map production | generation process. It is a figure explaining an interpolation function. It is a figure which shows the example of a pupil correction map. It is a figure which shows the example of a pupil correction map. It is a figure which shows the example of a pupil correction map. It is a figure which shows the example of a pupil correction map. It is a figure which shows the example of a pupil correction map. It is a figure which shows the example of a pupil correction map. It is a figure which shows the example of a pupil correction map. It is a block diagram showing an example of composition of electronic equipment of this art. It is a figure which shows the usage example which uses an image sensor.

Hereinafter, embodiments of the present technology will be described with reference to the drawings. The description will be given in the following order.
1. 1. Conventional exit pupil correction 2. Structure of solid-state imaging device of the present technology 3. Flow of generating pupil correction map 4. Example of pupil correction map 5. Configuration example of electronic device Examples of using image sensors

<1. About conventional exit pupil correction>
In a conventional solid-state imaging device using a spherical lens, as shown in FIG. 1, the exit pupil correction amount of an on-chip microlens (hereinafter simply referred to as a microlens) is increased from the center of the imaging region 11 toward the periphery. In order to increase the correction amount, the contour line 12 is changed in a concentric manner.

On the other hand, in recent years, in a solid-state imaging device for mobile use, since an exit pupil distance is required to be shortened, an aspherical lens is used as an optical lens.

However, the change in the incident angle with respect to the image height (corresponding to the distance from the center of the imaging region to the periphery) of the aspherical lens is not linear. Therefore, in the correction of the microlens position corresponding to the conventional spherical lens, the condensing position of the microlens and the light receiving portion of the pixel are misaligned, and the incident light is blocked by the light shielding film formed around the light receiving portion. The so-called “vignetting” occurs. As a result, shading deteriorates and sensitivity decreases.

On the other hand, in Patent Document 1, as shown in FIG. 2, the exit pupil correction amount of the microlens with respect to the distance (corresponding to the image height) from the center to the periphery of the imaging region 11 is represented by a contour line 13. It has been proposed to change to a concentric ellipse.

According to such a configuration, it is possible to improve the shading characteristics in the solid-state imaging device corresponding to the short exit pupil distance using the aspheric lens.

However, when the shading distribution in the imaging region is not concentric or elliptical, the above configuration cannot improve the shading characteristics locally.

For example, as shown in FIG. 3, it is assumed that the shading distribution in the imaging region 21 takes an arbitrary shape. In such a solid-state imaging device, when the exit pupil correction amount is changed in a concentric manner expressed by the contour line 22 with respect to the optical center, the correction amount cannot be locally optimized. The same applies to a case where the exit pupil correction amount is changed in a concentric ellipse shape with a contour line with respect to the optical center.

That is, in a solid-state imaging device having a shading distribution of an arbitrary shape, the shading characteristics cannot be optimally improved.

<2. Structure of solid-state imaging device of the present technology>
FIG. 4 is a cross-sectional view illustrating a structure of an embodiment of a solid-state imaging device to which the present technology is applied. 4 is configured as a CCD (Charge Coupled Device) image sensor, the solid-state imaging device 31 may be configured as a CMOS (Complementary Metal Oxide Semiconductor) image sensor.

In the solid-state imaging device 31, for example, a plurality of light receiving portions 33 constituting pixels are arranged in a matrix in an imaging region on a substrate 32 made of a silicon semiconductor, and a vertical transfer register having a CCD structure corresponding to each light receiving portion row. 34 is formed. Further, a color filter 36 and a microlens 37 are formed on the imaging region via a passivation film and a flattening film 35 (not shown).

The vertical transfer register 34 is configured by forming a transfer electrode 38 made of, for example, polycrystalline silicon on a transfer channel region formed on the surface of the substrate 32 through a gate insulating layer.

An interlayer insulating film 39 is formed on the surface of the substrate 32 including the transfer electrode 38. A light shielding film 41 is formed on the interlayer insulating film 39 except for the portion corresponding to the light receiving portion 33. That is, an opening 41 </ b> A is formed in a portion corresponding to the light receiving portion 33 of the light shielding film 41. The light shielding film 41 is formed of, for example, aluminum (Al) or tungsten (W).

The color filter 36 is formed as a Bayer array primary color filter including a red filter component 36R, a green filter component 36G, and a blue filter component 36B.

The microlenses 37 are formed so as to be arranged at positions where light is condensed on the corresponding light receiving portions 33. In this case, there is an opening 41 </ b> A of the light shielding film 41 on the light receiving unit 33, and basically only light that has passed through the opening 41 </ b> A reaches the light receiving unit 33.

In FIG. 4, incident light 46 is incident from the aperture point P of the diaphragm 45.

In the present embodiment, the imaging region is formed in a horizontally long shape. The unit pixel is formed in a square shape, and the opening 41A of the light receiving portion 33 is formed in a vertically long rectangle.

Further, in the present embodiment, the exit pupil correction amount of each microlens 37 formed corresponding to each pixel in the imaging region is set to an appropriate correction amount at each pixel position.

Specifically, the exit pupil correction amount of each of the microlenses 37 is a pupil correction function 2 derived by interpolating a correction amount calculated for a predetermined pixel position in the imaging region with an interpolation function described later. It is represented by a pupil correction map that is a dimensional distribution.

<3. Flow of generating pupil correction map>
Here, the pupil correction map generation processing will be described with reference to the flowchart of FIG.

In step S1, a pixel output at a predetermined pixel position on the imaging region is acquired. Here, the actual pixel value of the target pixel is acquired as the pixel output, but incident characteristics (for example, incident angle data) at the pixel position of the target pixel are acquired. Also good.

In step S2, the pupil correction amount required at each pixel position is calculated based on the pixel output at each pixel position.

In step S3, the pupil correction function is derived by interpolating the calculated pupil correction amount at each pixel position with the interpolation function.

For example, a cubic spline function is used as the interpolation function.

For example, as shown in FIG. 6, N cubic spline functions F (0) and F (1) for interpolating the pupil correction amount at each pixel position in a predetermined direction on the pixel plane corresponding to the imaging region. , F (2), F (3), ... F (N) are derived.

Further, the pupil correction amount around the pixel position (x, y) on the xy plane representing the pixel plane is calculated using the derived cubic spline function. Then, the pupil correction amount I (x, y) at the pixel position (x, y) is calculated using bicubic interpolation.

In this way, a pupil correction function representing the pupil correction amount at an arbitrary pixel position on the imaging region is derived.

At this time, the more complex the pixel output distribution on the imaging area, the more complicated the pupil correction function. Therefore, as will be described later, by using a predetermined coefficient set based on the imaging area, The correction function can be simplified and increased in accuracy.

Returning to the flowchart of FIG. 5, in step S4, a two-dimensional distribution on the xy plane is extracted from the derived pupil correction function to generate a pupil correction map.

Since the pupil correction map is generated as described above, the correction amount can be optimized locally. Therefore, in a solid-state imaging device having a shading distribution of an arbitrary shape, the shading characteristics are optimized. Can be improved. This also makes it possible to improve the degree of freedom in lens design.

<4. Example of pupil correction map>
Hereinafter, a specific example of the pupil correction map will be described.

(Example 1)
FIG. 7 shows a first example of the pupil correction map.

In the example of FIG. 7, the pupil correction function is derived by using a coefficient corresponding to the aspect ratio of the imaging region 51. In the pupil correction map of FIG. 7, the exit pupil correction amount of the microlens with respect to the distance from the optical center to the periphery is changed to a horizontally long concentric rectangular shape represented by the contour line 61. Thereby, appropriate exit pupil correction can be performed for the pixels in the entire imaging region 51.

The solid-state imaging device 31 having the configuration of FIG. 7 is provided in a camera that captures a wide-angle 360 °, a camera that includes a fish-eye lens, and a medical camera that improves the sensitivity of the angle of view by making the best use of effective pixels. The present invention can be applied to a solid-state imaging device.

(Example 2)
FIG. 8 shows a second example of the pupil correction map.

In the example of FIG. 8, the pupil correction function is obtained by using a coefficient corresponding to the change rate of the pupil correction amount in the three directions of the vertical direction, the horizontal direction, and the diagonal direction from the optical center on the imaging region 51. Is derived. In the pupil correction map of FIG. 8, the exit pupil correction amount of the microlens with respect to the distance from the optical center to the periphery is represented by the contour line 62 and changes concentrically at different rates in three directions. Thereby, appropriate exit pupil correction can be performed for the pixels in the entire imaging region 51.

The solid-state imaging device 31 having the configuration of FIG. 8 can be applied to a solid-state imaging device provided in a sensing camera or the like in which the resolution and sensitivity in the diagonal direction of the imaging region are improved.

Note that the pupil correction function is derived not only by the example of FIG. 8 but by using a coefficient corresponding to the change rate of the pupil correction amount in a plurality of predetermined directions from the optical center on the imaging region 51. Also good.

(Example 3)
FIG. 9 shows a third example of the pupil correction map.

In the example of FIG. 9, the solid-state imaging device 31 has four optical centers on the imaging region 51, and a pupil correction function is derived for each optical center. In the pupil correction map of FIG. 9, the exit pupil correction amount of the microlens with respect to the distance from each optical center to the periphery is changed concentrically as indicated by the contour line 63. Thereby, appropriate exit pupil correction can be performed for the pixels in the entire imaging region 51.

The solid-state imaging device 31 having the configuration of FIG. 9 can be applied to a solid-state imaging device provided in a light field camera having a plurality of small lens arrays between the main lens and the imaging region 51.

Note that the present invention is not limited to the example of FIG.

(Example 4)
FIG. 10 shows a fourth example of the pupil correction map.

In the example of FIG. 10, pixels having different pixel pitches and pixel sizes are arranged in the imaging region 51, and a pupil correction function is derived using a coefficient corresponding to the arrangement pattern. In the example of FIG. 10, for example, there are a plurality of one microlens provided corresponding to two pixels, and the exit pupil correction amount of each microlens corresponds to the arrangement of each microlens (pixel). A pupil correction map 64 is provided. Thereby, appropriate exit pupil correction can be performed for the pixels in the entire imaging region 51.

The solid-state imaging device 31 having the configuration of FIG. 10 can be applied to, for example, a solid-state imaging device for a low-profile module that compensates for a decrease in sensitivity around the angle of view with a pixel size.

(Example 5)
FIG. 11 shows a fifth example of the pupil correction map.

In the example of FIG. 11, the entire substrate 32 of the solid-state imaging device 31 is curved so that the imaging region 51 side is concave, and a pupil correction function is derived using a coefficient corresponding to the amount of warpage of the substrate 32. . In the pupil correction map of FIG. 11, the exit pupil correction amount of the microlens with respect to the distance from the optical center to the periphery is changed concentrically as indicated by the contour line 65. Thereby, appropriate exit pupil correction can be performed for the pixels in the entire imaging region 51.

11 can be applied to a so-called curvature sensor.

(Example 6)
FIG. 12 shows a sixth example of the pupil correction map.

In recent years, with the thinning of the wiring accompanying the miniaturization of pixels and the expansion of the chip, the voltage drop due to the wiring resistance cannot be ignored, and the in-plane characteristic difference of each pixel transistor occurs. Therefore, it is necessary to improve the in-plane uniformity by changing the absolute value of the amount of incident light with respect to characteristics relating to the signal amount such as linearity and conversion efficiency.

Therefore, in the example of FIG. 12, for the solid-state imaging device 31 in which the power supply and wiring in the substrate 32 are biased, a pupil correction function is derived using a coefficient corresponding to the power supply and wiring. In the pupil correction map of FIG. 12, the exit pupil correction amount of the microlens with respect to the distance from the position shifted from the optical center to the periphery changes in a non-concentric manner as indicated by the contour line 66. Thereby, appropriate exit pupil correction can be performed for the pixels in the entire imaging region 51.

The solid-state imaging device 31 having the configuration of FIG. 12 can be applied to a solid-state imaging device provided in a compound eye camera having a plurality of chips.

Note that a pupil correction map as shown in FIG. 12 may be generated by deriving the pupil correction function using a coefficient corresponding to the heat distribution when the solid-state imaging device 31 is driven. .

(Example 7)
FIG. 13 shows a seventh example of the pupil correction map.

In the example of FIG. 13, a pupil correction function is derived according to a shading distribution having an arbitrary shape. In the example of FIG. 13, the pupil correction amount of the microlens is given by the pupil correction map 67. Thereby, appropriate exit pupil correction can be performed for the pixels in the entire imaging region 51.

The solid-state imaging device 31 having the configuration of FIG. 13 can be applied to a solid-state imaging device having a shading distribution of an arbitrary shape other than the above-described example. Furthermore, the above-described examples 1 to 6 may be applied in any combination.

Further, the present technology can also be applied to a solid-state imaging device having an imaging region or a substrate having an arbitrary shape.

In the above, a Bayer array primary color filter is used. However, any color filter such as a checkered array or a stripe array may be used. Further, the color filter is not limited to the primary color system, and the same effect can be obtained even in a complementary color system.

In addition, in the present technology, although not illustrated, the curvature and / or the refractive index of the microlens is changed instead of changing the shift amount of the microlens as the change of the exit pupil correction amount of the microlens. May be. In this case, changes in the microlens curvature and refractive index are represented by a pupil correction map, as in the above-described example. Further, as the amount of change in the exit lens correction amount of the microlens, the shift amount of the microlens may be changed, and the curvature and / or refractive index of the microlens may be changed.

In addition, this technique is not restricted to application to a solid-state imaging device, It can apply also to an imaging device. Here, the imaging apparatus refers to a camera system such as a digital still camera or a digital video camera, or an electronic apparatus having an imaging function such as a mobile phone. In some cases, a module-like form mounted on an electronic device, that is, a camera module is used as an imaging device.

<5. Configuration example of electronic device>
Here, a configuration example of an electronic device to which the present technology is applied will be described with reference to FIG.

The electronic apparatus 200 shown in FIG. 14 includes an optical lens 201, a shutter device 202, a solid-state imaging device 203, a drive circuit 204, and a signal processing circuit 205. FIG. 14 shows an embodiment in which the above-described solid-state imaging device 1 of the present technology is provided in an electronic apparatus (digital still camera) as the solid-state imaging device 203.

The optical lens 201 forms image light (incident light) from the subject on the imaging surface of the solid-state imaging device 203. Thereby, the signal charge is accumulated in the solid-state imaging device 203 for a certain period. The shutter device 202 controls the light irradiation period and the light shielding period for the solid-state imaging device 203.

The drive circuit 204 supplies drive signals to the shutter device 202 and the solid-state imaging device 203. The drive signal supplied to the shutter device 202 is a signal for controlling the shutter operation of the shutter device 202. The drive signal supplied to the solid-state imaging device 203 is a signal for controlling the signal transfer operation of the solid-state imaging device 203. The solid-state imaging device 203 performs signal transfer using a drive signal (timing signal) supplied from the drive circuit 204. The signal processing circuit 205 performs various signal processing on the signal output from the solid-state imaging device 203. The video signal subjected to the signal processing is stored in a storage medium such as a memory or output to a monitor.

In the electronic device 200 of the present embodiment, the solid-state imaging device 203 can improve the shading characteristics. As a result, it is possible to provide an electronic device that can capture a high-quality image.

<6. Examples of using image sensors>
Finally, a usage example of the image sensor provided in the solid-state imaging device to which the present technology is applied will be described.

FIG. 15 is a diagram showing a usage example of the image sensor described above.

The image sensor described above can be used in various cases for sensing light such as visible light, infrared light, ultraviolet light, and X-ray as follows.

・ Devices for taking images for viewing, such as digital cameras and mobile devices with camera functions ・ For safe driving such as automatic stop and recognition of the driver's condition, etc. Devices used for traffic, such as in-vehicle sensors that capture the back, surroundings, and interiors of vehicles, surveillance cameras that monitor traveling vehicles and roads, and ranging sensors that measure distances between vehicles, etc. Equipment used for home appliances such as TVs, refrigerators, air conditioners, etc. to take pictures and operate the equipment according to the gestures ・ Endoscopes, equipment that performs blood vessel photography by receiving infrared light, etc. Equipment used for medical and health care ・ Security equipment such as security surveillance cameras and personal authentication cameras ・ Skin measuring instrument for photographing skin and scalp photography Such as a microscope to do beauty Equipment used for sports such as action cameras and wearable cameras for sports applications etc. Equipment used for agriculture such as cameras for monitoring the condition of fields and crops

Note that the embodiments of the present technology are not limited to the above-described embodiments, and various modifications can be made without departing from the gist of the present technology.

Furthermore, this technique can take the following structures.
(1)
A plurality of pixels arranged in an imaging region on the substrate;
An on-chip microlens formed corresponding to each pixel,
The exit pupil correction amount of each of the on-chip microlenses is represented by a two-dimensional distribution of a pupil correction function derived by interpolating a calculated correction amount calculated for a predetermined position on the imaging region with an interpolation function. Solid-state imaging device.
(2)
The solid-state imaging device according to (1), wherein the pupil correction function is derived using a predetermined coefficient set based on the imaging region.
(3)
The solid-state imaging device according to (2), wherein the pupil correction function is derived using the coefficient corresponding to an aspect ratio of the imaging region.
(4)
The solid-state imaging device according to (2) or (3), wherein the pupil correction function is derived using a coefficient corresponding to a change rate of a pupil correction amount in a plurality of directions from the optical center on the imaging region.
(5)
A plurality of optical centers on the imaging region;
The solid-state imaging device according to any one of (2) to (4), wherein the pupil correction function is derived for each optical center.
(6)
Pixels having different pixel pitches or pixel sizes are arranged in the imaging region,
The solid-state imaging device according to any one of (2) to (5), wherein the pupil correction function is derived using the coefficient corresponding to the pixel arrangement pattern.
(7)
The substrate is curved so that the imaging region side is concave,
The solid-state imaging device according to any one of (2) to (6), wherein the pupil correction function is derived using the coefficient corresponding to a warp amount of the substrate.
(8)
The said pupil correction function is derived | led-out using the said coefficient according to the power supply or wiring in the said board | substrate. (2) The solid-state imaging device in any one of (7).
(9)
The solid-state imaging device according to any one of (2) to (8), wherein the pupil correction function is derived using the coefficient corresponding to a heat distribution when the solid-state imaging device is driven.
(10)
A plurality of pixels arranged in an imaging region on the substrate;
An on-chip microlens formed corresponding to each pixel,
The exit pupil correction amount of each of the on-chip microlenses is represented by a two-dimensional distribution of a pupil correction function derived by interpolating a calculated correction amount calculated for a predetermined position on the imaging region with an interpolation function. An electronic device having a solid-state imaging device.

31 solid-state imaging device, 32 substrate, 33 light-receiving unit, 36 color filter, 37 on-chip microlens, 51 imaging area, 200 electronic device, 203 solid-state imaging device

Claims

A plurality of pixels arranged in an imaging region on the substrate;
An on-chip microlens formed corresponding to each pixel,
The exit pupil correction amount of each of the on-chip microlenses is represented by a two-dimensional distribution of a pupil correction function derived by interpolating a calculated correction amount calculated for a predetermined position on the imaging region with an interpolation function. Solid-state imaging device.
The solid-state imaging device according to claim 1, wherein the pupil correction function is derived using a predetermined coefficient set based on the imaging region.
The solid-state imaging device according to claim 2, wherein the pupil correction function is derived using the coefficient corresponding to an aspect ratio of the imaging region.
The solid-state imaging device according to claim 2, wherein the pupil correction function is derived using a coefficient corresponding to a change rate of a pupil correction amount in a plurality of directions from the optical center on the imaging region.
A plurality of optical centers on the imaging region;
The solid-state imaging device according to claim 2, wherein the pupil correction function is derived for each optical center.
Pixels having different pixel pitches or pixel sizes are arranged in the imaging region,
The solid-state imaging device according to claim 2, wherein the pupil correction function is derived using the coefficient according to the pixel arrangement pattern.
The substrate is curved so that the imaging region side is concave,
The solid-state imaging device according to claim 2, wherein the pupil correction function is derived using the coefficient corresponding to a warp amount of the substrate.
The solid-state imaging device according to claim 2, wherein the pupil correction function is derived using the coefficient corresponding to a power supply or wiring on the substrate.
The solid-state imaging device according to claim 2, wherein the pupil correction function is derived using the coefficient corresponding to a heat distribution when the solid-state imaging device is driven.
A plurality of pixels arranged in an imaging region on the substrate;
An on-chip microlens formed corresponding to each pixel,
The exit pupil correction amount of each of the on-chip microlenses is represented by a two-dimensional distribution of a pupil correction function derived by interpolating a calculated correction amount calculated for a predetermined position on the imaging region with an interpolation function. An electronic device having a solid-state imaging device.