WO2017127958A1 - Dispositif électroluminescent de pompage optique et procédé de préparation de dispositif électroluminescent de pompage optique intégré monolithique - Google Patents

Dispositif électroluminescent de pompage optique et procédé de préparation de dispositif électroluminescent de pompage optique intégré monolithique Download PDF

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Publication number
WO2017127958A1
WO2017127958A1 PCT/CN2016/000702 CN2016000702W WO2017127958A1 WO 2017127958 A1 WO2017127958 A1 WO 2017127958A1 CN 2016000702 W CN2016000702 W CN 2016000702W WO 2017127958 A1 WO2017127958 A1 WO 2017127958A1
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WO
WIPO (PCT)
Prior art keywords
unit body
substrate
emitting device
nitride
yellow
Prior art date
Application number
PCT/CN2016/000702
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English (en)
Chinese (zh)
Inventor
姜全忠
Original Assignee
姜全忠
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 姜全忠 filed Critical 姜全忠
Publication of WO2017127958A1 publication Critical patent/WO2017127958A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

L'invention concerne un dispositif électroluminescent de pompage optique comprenant : un substrat transparent servant à la croissance de nitrure, une structure de puits quantique jaune-vert-rouge et une couche de recouvrement située au-dessus de la structure de puits quantique jaune-vert-rouge, une pluralité de corps d'unité comprenant notamment mais non exclusivement du nitrure sont disposés au niveau d'un côté du substrat, les corps d'unités présentant une face latérale inclinée, et la structure de puits quantique jaune-vert-rouge étant située au sommet des corps d'unités. L'invention concerne en outre un procédé de préparation d'un dispositif électroluminescent de pompage optique intégré monolithique. Par comparaison à l'art antérieur, selon la présente invention le dispositif électroluminescent de pompage optique permet de réduire une contrainte de pression, et d'améliorer le rendement électroluminescent.
PCT/CN2016/000702 2016-01-29 2016-12-22 Dispositif électroluminescent de pompage optique et procédé de préparation de dispositif électroluminescent de pompage optique intégré monolithique WO2017127958A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201610064371.5A CN105679904B (zh) 2016-01-29 2016-01-29 光泵浦发光器件及单片集成光泵浦发光器件的制备方法
CN201610064371.5 2016-01-29

Publications (1)

Publication Number Publication Date
WO2017127958A1 true WO2017127958A1 (fr) 2017-08-03

Family

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Application Number Title Priority Date Filing Date
PCT/CN2016/000702 WO2017127958A1 (fr) 2016-01-29 2016-12-22 Dispositif électroluminescent de pompage optique et procédé de préparation de dispositif électroluminescent de pompage optique intégré monolithique

Country Status (2)

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CN (1) CN105679904B (fr)
WO (1) WO2017127958A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107731972A (zh) * 2017-10-24 2018-02-23 江门市奥伦德光电有限公司 一种长条阵列式纳米发光二极管及其制备方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105679904B (zh) * 2016-01-29 2022-04-01 姜全忠 光泵浦发光器件及单片集成光泵浦发光器件的制备方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1983656A (zh) * 2005-12-15 2007-06-20 Lg电子株式会社 具有垂直结构的发光二极管及其制造方法
US20070171953A1 (en) * 2006-01-25 2007-07-26 Michael Shur Led-based optical pumping for laser light generation
CN102576783A (zh) * 2009-07-30 2012-07-11 3M创新有限公司 像素化led
CN105679904A (zh) * 2016-01-29 2016-06-15 姜全忠 光泵浦发光器件及单片集成光泵浦发光器件的制备方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1198340C (zh) * 2003-04-16 2005-04-20 方大集团股份有限公司 复合量子阱结构GaN基蓝光LED外延片生长方法
JP2012514329A (ja) * 2008-12-24 2012-06-21 スリーエム イノベイティブ プロパティズ カンパニー 両方の側に波長変換器を有する光生成デバイス
CN101872825B (zh) * 2010-04-29 2013-05-15 华侨大学 制备低色温高显色性大功率白光led的方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1983656A (zh) * 2005-12-15 2007-06-20 Lg电子株式会社 具有垂直结构的发光二极管及其制造方法
US20070171953A1 (en) * 2006-01-25 2007-07-26 Michael Shur Led-based optical pumping for laser light generation
CN102576783A (zh) * 2009-07-30 2012-07-11 3M创新有限公司 像素化led
CN105679904A (zh) * 2016-01-29 2016-06-15 姜全忠 光泵浦发光器件及单片集成光泵浦发光器件的制备方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107731972A (zh) * 2017-10-24 2018-02-23 江门市奥伦德光电有限公司 一种长条阵列式纳米发光二极管及其制备方法

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Publication number Publication date
CN105679904A (zh) 2016-06-15
CN105679904B (zh) 2022-04-01

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