WO2017125044A1 - 光斑布局结构、面形测量方法及曝光视场控制值计算方法 - Google Patents
光斑布局结构、面形测量方法及曝光视场控制值计算方法 Download PDFInfo
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- WO2017125044A1 WO2017125044A1 PCT/CN2017/071728 CN2017071728W WO2017125044A1 WO 2017125044 A1 WO2017125044 A1 WO 2017125044A1 CN 2017071728 W CN2017071728 W CN 2017071728W WO 2017125044 A1 WO2017125044 A1 WO 2017125044A1
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
- G03F9/7023—Aligning or positioning in direction perpendicular to substrate surface
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70641—Focus
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
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- G—PHYSICS
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/70516—Calibration of components of the microlithographic apparatus, e.g. light sources, addressable masks or detectors
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
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- G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70716—Stages
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
- G03F9/7046—Strategy, e.g. mark, sensor or wavelength selection
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7065—Production of alignment light, e.g. light source, control of coherence, polarization, pulse length, wavelength
Definitions
- the invention relates to a spot layout structure, a surface shape measuring method and an exposure field control value calculation method, which are applied to the field of lithography technology.
- a projection lithography machine is a device that projects a pattern on a mask onto a surface of a silicon wafer through a projection objective.
- the silicon wafer is out of focus or tilted with respect to the focal plane of the objective lens, some areas in the exposure field of view are outside the effective depth of focus, which will seriously affect the lithography quality. Therefore, the focus adjustment is needed.
- the flat system performs precise control. There are two methods of focusing and leveling commonly used.
- One is to measure the height and tilt value of the workpiece table in real time using a specific layout of the measuring spot, and control the workpiece table to perform the focusing and leveling exposure; the other is Before the exposure, the surface shape of the substrate in the exposure field is measured by a plurality of spots, and the exposure motion control value is obtained by calculation, and then the exposure operation is performed.
- the measurement spot of a specific layout is often directed to a particular spot field of view, and cannot be applied to a variety of different sizes of exposure fields, and the measurement spot of a particular layout is exposed at the edge during edge exposure. Invalid phenomenon will occur in the field.
- This method is also not suitable for surface scanning motion, and the efficiency is low.
- the second method adopts a spot arrangement arranged in a straight line, measures the height of the workpiece table through the spot at both ends of the straight line, controls the workpiece table to be within the effective depth of focus, and measures the surface shape of the substrate by scanning the middle spot to calculate the exposure control. After the value is exposed, it is necessary to decelerate when measuring the edge field of view to stop the measurement spot at both ends within the range of the substrate, preventing the spot from failing beyond the substrate.
- This method is slow to scan, takes a long time, and is inefficient. At the same time, this method cannot perform real-time focus adjustment.
- the reference field is used, that is, the control value of the edge field is directly replaced by the nearby internal exposure field control value.
- This treatment method is not suitable for small depth of focus and edge surface In the case where the shape differs greatly from the internal surface shape, such as the case where the edge of the substrate is warped, this method tends to defocus at the edge of the substrate and cannot be used.
- the lithography machine is applied in various scenarios, and different models are required to realize exposure of different size substrates, and the exposure field of view is also different in size. Therefore, a spot layout structure, a surface measurement method, and an exposure field of view are required.
- the control value calculation method can satisfy more lithography scenes, and can be applied to both real-time surface measurement and scanning surface measurement, so that the spot measurement device applied thereto has better versatility and applicability.
- the technical problem to be solved by the present invention is to provide a spot layout structure, a surface measurement method and an exposure field control method for improving scanning measurement efficiency, suitable for real-time surface measurement and scanning surface measurement scenes, and various exposure fields of different sizes. Value calculation method.
- a spot layout structure comprising a plurality of measurement spots, the plurality of measurement spots forming at least a set of orthogonal lines, the measurement spots on the orthogonal lines are arranged outwardly from the center, and the number of measurement spots on each line There are at least four, and the measurement spot is used to measure a planar shape.
- the measuring spot is formed/shaped, shaped, cross-shaped, square-shaped or X-shaped, and the square-shaped shape is formed by a combination of two orthogonal straight lines.
- the measurement spot is arranged in a rotating cruciform structure.
- the rotating cruciform structure is formed by a cross-shaped counterclockwise rotation of 18° to 35°.
- the measurement spot diverges from the center outward at an equal distance.
- a method for measuring a profile, using the spot layout structure comprising:
- Step 1 controlling the workpiece table to perform an exposure scanning motion, reading a spot reading of each spot in the spot layout structure, and obtaining a height value and a horizontal position of each spot at each moment;
- Step 2 converting each of the spot readings into coordinate values in a workpiece table coordinate system, the coordinates The value is the original face data measured by the spot scan.
- part or all of the measurement spot is designated as an effective spot based on the effectiveness of the measurement spot, the spot reading being obtained from the effective spot.
- the setting method of measuring the spot validity is set by hardware configuration or software.
- the path of the scanning movement is to maintain the height and inclination of the workpiece table, and adopt a grid line method, a circle method or a cross line method.
- step 2 the horizontal position of the spot reading is converted into a horizontal coordinate value in the workpiece table coordinate system by formulas 1 and 2,
- X WS[n] and Y WS[n] are the X-direction and Y-direction horizontal positions of the center of the field of view of the workpiece stage at the nth time, respectively, and X spot[i] and Y spot[i] are the ith spot respectively.
- X [n][i] , Y [n][i] are the horizontal positions of the i-th spot at the nth time in the workpiece coordinate system, respectively, with respect to the X-direction and Y-direction horizontal position of the center of the exposure field of view, where n, i is a natural number.
- the height value of the spot reading is converted into a height coordinate value in the workpiece table coordinate system by formula 3 or 4.
- Z WS[n] is the height value of the field of view of the workpiece stage at the nth time
- Z [n]spot[i] is the measured height value of the ith spot at the nth time
- Rx WS[n] , Ry WS[ n] is the X-direction and Y-direction tilt values of the center of the field of view of the workpiece stage at the nth time
- X spot[i] and Y spot[i] are the X-direction and Y of the ith spot relative to the center of the exposure field, respectively.
- Z [n][i] is the height measurement of the i-th spot at the nth time in the workpiece table coordinate system, where n and i are natural numbers.
- An exposure field control value calculation method is obtained by using the surface shape measurement method, and the original face shape data is processed by the following steps to obtain an exposure field control value of the workpiece stage, including :
- Step 3 fitting the original surface shape data by using a mathematical fitting model to obtain dense point shape data within an allowable error range
- Step 4 performing plane fitting on the dense point shape data according to the set threshold. If the number of effective dense points of the exposure field of view is greater than a set threshold, directly using the dense point shape data for plane fitting, if The number of effective dense points of the exposure field of view is less than the set threshold, and the original surface data is fitted by using a mathematical fitting model by offsetting the field of view or expanding the nearby selection area until the number of effective dense points is reached.
- the set threshold is used to perform plane fitting using the dense point shape data.
- the method further comprises: pre-processing the original shape data, and the pre-processing comprises filtering a jump point.
- the mathematical fitting model adopts a linear interpolation, a multiple curved surface or a Zernike fitting model.
- step 4 the formula of the plane fitting is:
- Z 0 is the height value of the exposure view scene shape
- Rx is the X-direction tilt value of the exposure view scene shape
- Ry is the Y-direction tilt value of the exposure view scene shape
- the technical solution provided by the present invention adopts a spot layout structure including at least one set of orthogonal straight lines, which can measure multiple spot readings in real time, and obtain the height value and the tilt value of the surface shape of the substrate by plane fitting.
- a spot layout structure including at least one set of orthogonal straight lines, which can measure multiple spot readings in real time, and obtain the height value and the tilt value of the surface shape of the substrate by plane fitting.
- the coordinate value in the system is the spot Scan the measured original shape data, process the original surface shape data, obtain the exposure field control value of the workpiece stage, perform focus adjustment and flattening exposure, and do not need to consider the effectiveness of the spot when scanning the edge field of view
- the speed of movement can be further improved, and the scanning measurement efficiency is improved. Therefore, the technical solution of the present invention has the functions of measuring and scanning the measurement surface shape in real time, so that the technical solution has better versatility and applicability.
- FIG. 1 is a schematic structural view of a layout of the rice-shaped spot in an embodiment of the present invention
- FIG. 2 is a schematic structural view of a layout of the rice-shaped spot in an embodiment of the present invention.
- FIG. 3 is a schematic flow chart of the surface shape measuring method according to an embodiment of the present invention.
- FIG. 4 is a schematic diagram of measuring surface data of the spot measurement system according to an embodiment of the present invention.
- FIG. 5 is a schematic diagram of the grid line mode path in an embodiment of the present invention.
- FIG. 6 is a schematic diagram of the winding mode path in an embodiment of the present invention.
- FIG. 7 is a schematic diagram of the cross-line mode path in an embodiment of the present invention.
- FIG. 9 is a schematic flow chart of processing the original surface data according to an embodiment of the present invention.
- FIG. 10 is a three-dimensional effect diagram of the original surface data described in FIG. 8 after being processed
- FIG. 11 is a schematic structural view of a standard cross-shaped spot layout according to an embodiment of the present invention.
- FIG. 12 is a schematic structural view of a standard cross-shaped spot layout according to an embodiment of the present invention.
- FIG. 13 is a schematic structural diagram of an X-shaped spot layout according to an embodiment of the present invention.
- FIG. 14 is a schematic structural diagram of a layout of the rice X-shaped spot in an embodiment of the present invention.
- FIG. 15 is a schematic structural view of a rotating cross-shaped spot layout according to an embodiment of the present invention.
- Figure 16 is a block diagram showing the layout of the rotating cross-shaped spot in an embodiment of the present invention.
- the figure shows: 100, spot; 101, exposure field; 102, spot projector illumination range; 103, spot path; 111, first exposure field; 112, first exposure field; 113, first exposure Field; 200, substrate; 300, workpiece table; 400, spot projector.
- the spot layout structure of the present invention includes a plurality of measurement spots, the plurality of measurement spots forming at least one set of orthogonal lines, and the measurement spots on the orthogonal lines are diverging outward from the center.
- the number of measurement spots on each straight line is at least four, and the measurement spot measures a planar shape.
- a spot measurement system is proposed.
- the spot measurement system applied to the spot layout structure of the present invention comprises a spot projector 400, a spot receiver and a signal processing unit, and the spot projector 400 emits a light beam to be irradiated on the exposure field 101 of the substrate 200 to form at least one.
- the center of the orthogonal straight line has a divergent spot layout structure and is reflected, and the number of spots 100 in each linear direction is at least four, and the spot receiver receives the reflected beam and generates an electrical signal, and the signal processing unit processes The electrical signal obtains positional information of the planar shape of the substrate 200.
- the spot 100 in the spot layout structure can be selected for effectiveness.
- the effective spot is specified by setting the effectiveness of the spot 100 in the spot layout structure.
- the setting method of the spot 100 validity is set by hardware configuration or software.
- the spots 100 in the spot layout structure diverge outward from the center at equal distances.
- the spot layout structure may adopt a m-shaped spot layout (as shown in FIG. 1 and FIG. 2), a standard cross-shaped spot layout (as shown in FIG. 11 and FIG. 12), and an X-shaped spot.
- Layout (as shown in Figures 13 and 14) or a rotating cross-shaped spot layout (as shown in Figures 15 and 16). That is to say, the corresponding type of spot projector 400 is installed according to different needs, which is suitable for various scene requirements.
- the length dimensions indicated are merely illustrative and are not specifically limited to the structural features.
- the spot projector illumination range 102 covers all of the spots 100.
- the spot reading of some spots 100 is specified as valid or invalid, and the square-shaped spot layout adopted by the spot layout structure can be converted into a standard cross-shaped or X-shaped spot layout. Therefore, the rice-shaped spot layout has good applicability.
- the spot layout structure adopts a rotating cross shape, and the rotation angle of the rotating cross shape is 18° to 35°.
- spot layout structures are only several preferred embodiments of the spot layout structure of the present invention. On the basis of this, more embodiments can be obtained through reasonable changes, which are also within the scope of the present invention. within.
- the effective spot is specified by hardware configuration or software, and the number of measurement spots in each linear direction in the spot layout structure is changed, which can be applied to various exposure views of different sizes.
- Field 101 (as in Figures 2, 12, 14 and 16, includes a first exposure field of view 111, a second exposure field of view 112, and a third exposure field of view 113).
- the surface measuring method of the present invention adopts the spot layout structure, comprising: Step 1: controlling the workpiece table 300 to perform an exposure scanning motion, reading a spot reading of an effective spot in the spot layout structure, and obtaining each moment. The height value and the horizontal position of each spot 100; in step 2, each spot reading is converted into a coordinate value in the workpiece table coordinate system, the coordinate value being the original face shape data measured by the spot scanning.
- the method can be used for real-time focus adjustment during exposure.
- the light spot layout structure including at least one set of orthogonal straight lines is formed in the exposure field of view 101 of the substrate 200, and the spot spot reading of the effective spot in the spot layout structure is read in real time, and the surface shape of the substrate 200 is obtained by plane fitting.
- the height value and the tilt value are subjected to focus leveling exposure according to the height value and the tilt value.
- the original face shape data of the substrate 200 is measured by the plurality of spots 100 by the method, and the original face shape data is processed to obtain an exposure motion control value, and then the focus leveling exposure is performed.
- the original face shape data is processed to obtain an exposure motion control value, and then the focus leveling exposure is performed.
- the focus leveling exposure is performed.
- Figure 3 it includes:
- Step 1 referring to FIG. 4, a spot layout structure including at least one set of orthogonal straight lines is formed in the exposure field of view 101 of the substrate 200 to ensure that the height and the tilt value of the workpiece stage 300 are unchanged, so that the workpiece stage 300 Performing a scanning motion, reading a spot reading of the spot in the spot layout structure, and obtaining a height value and a horizontal position of each spot 100 at each time; wherein the path of the scanning motion adopts a grid line mode (refer to FIG. 5)
- the spot path 103 is formed on the substrate 200 by a winding method (see FIG. 6), a cross line method (see FIG. 7), or the like.
- the grid line mode is that the workpiece stage 300 travels forward in a grid line direction row by line to scan all of the exposure fields of view 101 on the substrate 200.
- the winding mode is that the workpiece stage 300 travels forward in a circular manner to scan all of the exposure fields of view 101 on the substrate 200.
- the cross-line mode is that the workpiece stage 300 travels diagonally forward until all of the exposure fields of view 101 on the substrate 200 are scanned.
- the spot reading is selected from the effective spot.
- the setting method of the spot 100 validity is set by hardware configuration or software.
- each of the spot readings is converted into coordinate values in a workpiece table coordinate system, and the coordinate values are original face shape data measured by the spot 100 scan.
- FIG. 8 is a three-dimensional effect diagram of the original face shape data of the substrate 200.
- X WS[n] and Y WS[n] are the X-direction and Y-direction horizontal positions of the center of the field of view of the workpiece stage at the nth time, respectively, and X spot[i] and Y spot[i] are the ith spot respectively.
- X [n][i] and Y [n][i] are the horizontal positions of the i-th spot at the nth time in the workpiece table coordinate system with respect to the X-direction and Y-direction horizontal position of the center of the exposure field of view.
- the height value of the spot reading is converted to the height coordinate value in the workpiece table coordinate system by Equation 3 or 4. If the tilt value of the workpiece stage 300 in step 1 is zero, the conversion relationship is:
- Z WS[n] is the height value of the center of the field of view of the workpiece stage at the nth time
- Z [n]spot[i] is the measured height value of the ith spot at the nth time
- Rx WS[n] , Ry WS [n] is the X-direction and Y-direction tilt value of the exposure field of the workpiece stage at the nth time, respectively.
- X spot[i] and Y spot[i] are the X-direction and Y of the i-th spot relative to the center of the exposure field, respectively.
- Z [n][i] is the height measurement of the i-th spot at the nth time in the workpiece table coordinate system.
- Step 3 processing the original surface shape data to obtain a control value of the exposure field of view 101 of the workpiece stage 300, and performing focus adjustment and level exposure according to the control value of the exposure field of view 101.
- the original face shape data is processed by the following method, and the exposure field 101 control value of the workpiece stage 300 is obtained, including:
- Pre-processing the original polygon data including filtering jump points and the like.
- the so-called allowable error refers to the surface shape obtained by the method, and the surface obtained by the actual dense sampling. The deviation between the shapes is within an acceptable range.
- the mathematical fitting model adopts a linear interpolation, a multiple curved surface or a Zernike fitting model.
- the plane fitting formula is:
- Z 0 is the height value of the exposure view scene shape
- Rx is the X-direction tilt value of the exposure view scene shape
- Ry is the Y-direction tilt value of the exposure view scene shape
- FIG. 10 is a three-dimensional effect diagram of the original surface data processed by the above method.
- the control value of the exposure field 101 of the workpiece table 300 is obtained, and the original surface data is not directly used, but a finer surface shape generated by using the mathematical fitting model based on the original surface data is used, which can effectively reduce the space.
- the error caused by the uneven distribution of sampling points makes the deviation of the calculated control value smaller, and the selection of the surface scanning path is more free, and a more efficient scanning path can be selected.
- the problem that the edge field exposure is out of focus is solved in the case where the available depth of focus is limited or the edge is warped, and the amount of defocus in the exposure field of view 101 is reduced.
- the adaptability to the surface shape of the substrate 200 is enhanced, the consistency and stability of the exposure effect are improved, and the process adaptability is improved.
- the technical solution provided by the invention adopts a spot layout structure including at least one set of orthogonal straight lines, which can measure a plurality of spot 100 readings in real time, obtain the height value and the tilt value of the surface shape of the substrate 200 by plane fitting, and perform real-time focusing adjustment.
- Flat exposure by setting the effectiveness of each spot 100 in the spot layout structure, is applicable to a plurality of different exposure fields 101, and can also read the effective spot reading through the scanning motion of the workpiece table 300, and each spot is The reading is converted into a coordinate value in the workpiece table coordinate system, and the coordinate value is the original surface shape data of the spot 100 scanning measurement, and the original surface shape data is processed to obtain the exposure field 101 control value of the workpiece stage 300, and the reading is performed.
- the technical solution of the present invention has the functions of measuring and scanning the measurement surface shape in real time, so that the technical solution of the present invention has better versatility and applicability.
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- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
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- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
Claims (15)
- 一种光斑布局结构,其特征在于,包括多个测量光斑,所述多个测量光斑至少构成一组正交直线,所述正交直线上的测量光斑由中心向外发散布置,每条直线上的测量光斑数目至少为4个,所述测量光斑用于测量平面面形。
- 根据权利要求1所述的光斑布局结构,其特征在于,所述测量光斑构成/形、\形、十字形、米字形或者X字形,所述米字形由两组正交直线交叉组合形成。
- 根据权利要求1所述的光斑布局结构,其特征在于,所述测量光斑呈旋转的十字形结构排布。
- 根据权利要求3所述的光斑布局结构,其特征在于,所述旋转的十字形结构由十字形逆时针旋转18°~35°形成。
- 根据权利要求1所述的光斑布局结构,其特征在于,所述测量光斑以相等距离从中心向外发散布局。
- 一种面形测量方法,其特征在于,采用如权利要求1-5任意一项所述的光斑布局结构,包括:步骤1,控制工件台进行曝光扫描运动,读取所述光斑布局结构中各个光斑的光斑读数,获得各个时刻各个光斑的高度值和水平位置;步骤2,将各个所述光斑读数转换为工件台坐标系中的坐标值,所述坐标值为光斑扫描测量的原始面形数据。
- 根据权利要求6所述的面形测量方法,其特征在于,根据所述测量光斑的有效性,将所述测量光斑的部分或全部指定为有效光斑,所述光斑读数从所述有效光斑获得。
- 根据权利要求7所述的面形测量方法,其特征在于,所述测量光斑的有效性的设定方法采用硬件配置或软件设定。
- 根据权利要求6所述的面形测量方法,其特征在于,步骤1中,所述扫描运动的路径为保持所述工件台高度和倾斜不变,采用栅格线方式、绕圈方式或交叉线方式。
- 根据权利要求6所述的面形测量方法,其特征在于,步骤2中,通过公式1和2将所述光斑读数的水平位置转换为工件台坐标系中的水平坐标值,公式1:X[n][i]=XWS[n]+Xspot[i];公式2:Y[n][i]=YWS[n]+Yspot[i];其中,XWS[n]、YWS[n]分别为第n时刻工件台曝光视场中心的X向、Y向水平位置,Xspot[i]、Yspot[i]分别为第i个光斑相对于曝光视场中心的X向、Y向水平位置,X[n][i]、Y[n][i]分别为第n时刻第i光斑在工件台坐标系的水平位置,其中n、i为自然数。
- 根据权利要求6所述的面形测量方法,其特征在于,步骤2中,通过公式3或4将所述光斑读数的高度值转换为工件台坐标系中的高度坐标值,如果步骤1中工件台的倾斜值为零,转换关系式为:公式3:Z[n][i]=ZWS[n]+Z[n]spot[i];如果步骤1中工件台的倾斜值不为零,转换关系式为:公式4:Z[n][i]=ZWS[n]+Z[n]spot[i]+RxWS[n]×Yspot[i]-RyWS[n]×Xspot[i];其中,ZWS[n]为第n时刻工件台曝光视场的高度值,Z[n]spot[i]为第n时刻第i个光斑的测量高度值,RxWS[n]、RyWS[n]分别为第n时刻工件台曝光视场中心的X向、Y向倾斜值,Xspot[i]、Yspot[i]分别为第i个光斑相对于曝光视场中心的X向、Y向水平位置,Z[n][i]为第n时刻第i光斑在工件台坐标系的高度测量值,其中n、i为自然数。
- 一种曝光视场控制值计算方法,其特征在于,采用如权利要求6-11任何一项所述的面形测量方法获得所述原始面形数据,通过如下步骤对所述原始面形数据进行处理,获得工件台的曝光视场控制值,包括:步骤3,使用数学拟合模型对所述原始面形数据进行拟合,得到允许误差范围内的密集点面形数据;步骤4,根据设定的阈值,对密集点面形数据进行平面拟合,如果曝光视场的有效密集点数量大于设定的阈值,直接使用所述密集点面形数据进行平面拟合,如果曝光视场的有效密集点数量小于设定的阈值,通过向内偏移曝光视场或扩大附近选区,再使用数学拟合模型对所述原始面形数据进行拟合,直到有效密集点数量达到设定的阈值,再使用所述密集点面形数据进行平面拟合。
- 根据权利要求12所述的曝光视场控制值计算方法,其特征在于,在步骤3之前还包括:对所述原始面形数据进行预处理,所述预处理包括过滤跳变点。
- 根据权利要求12所述的曝光视场控制值计算方法,其特征在于,步骤3中,所述数学拟合模型采用线性插值、多次曲面或泽尔尼克拟合模型。
- 根据权利要求12所述的曝光视场控制值计算方法,其特征在于,步骤4中,所述平面拟合的公式为:Z=Z0-Ry×X+Rx×Y其中,X,Y,Z为密集点面形数据,Z0为曝光视场面形的高度值,Rx为曝光视场面形的X向倾斜值,Ry为曝光视场面形的Y向倾斜值,Z0、Rx、Ry经过适当转换得到曝光视场的控制值。
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US16/071,943 US10915030B2 (en) | 2016-01-22 | 2017-01-19 | Light-spot distribution structure, surface shape measurement method, and method for calculating exposure field-of-view control value |
SG11201806275VA SG11201806275VA (en) | 2016-01-22 | 2017-01-19 | Light-spot distribution structure, surface shape measurement method, and method for calculating exposure field-of-view control value |
KR1020187024180A KR102117038B1 (ko) | 2016-01-22 | 2017-01-19 | 광-스폿 분포 구조, 표면 형상 측정 방법, 및 노출 시야 제어 값을 계산하는 방법 |
JP2018537653A JP6615370B2 (ja) | 2016-01-22 | 2017-01-19 | 表面形状測定方法、および露光視野制御値算出方法 |
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CN110260787B (zh) * | 2019-06-26 | 2020-12-01 | 王菲 | 一种激光光斑尺寸全角度评价与表征方法 |
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US10915030B2 (en) | 2021-02-09 |
CN106997151B (zh) | 2019-05-31 |
JP6615370B2 (ja) | 2019-12-04 |
KR102117038B1 (ko) | 2020-06-26 |
CN106997151A (zh) | 2017-08-01 |
JP2019504320A (ja) | 2019-02-14 |
KR20180107166A (ko) | 2018-10-01 |
TWI622862B (zh) | 2018-05-01 |
SG11201806275VA (en) | 2018-08-30 |
TW201736979A (zh) | 2017-10-16 |
US20190025711A1 (en) | 2019-01-24 |
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