WO2017118083A1 - 一种触摸屏及其制作方法 - Google Patents

一种触摸屏及其制作方法 Download PDF

Info

Publication number
WO2017118083A1
WO2017118083A1 PCT/CN2016/098954 CN2016098954W WO2017118083A1 WO 2017118083 A1 WO2017118083 A1 WO 2017118083A1 CN 2016098954 W CN2016098954 W CN 2016098954W WO 2017118083 A1 WO2017118083 A1 WO 2017118083A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
touch screen
photoresist material
transparent photoresist
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2016/098954
Other languages
English (en)
French (fr)
Inventor
曾亭
胡明
谢涛峰
郭总杰
史文杰
许占齐
丁贤林
邹富伟
庞聪
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BOE Technology Group Co Ltd
Hefei Xinsheng Optoelectronics Technology Co Ltd
Original Assignee
BOE Technology Group Co Ltd
Hefei Xinsheng Optoelectronics Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BOE Technology Group Co Ltd, Hefei Xinsheng Optoelectronics Technology Co Ltd filed Critical BOE Technology Group Co Ltd
Priority to US15/535,507 priority Critical patent/US10691236B2/en
Publication of WO2017118083A1 publication Critical patent/WO2017118083A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • G06F3/0445—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using two or more layers of sensing electrodes, e.g. using two layers of electrodes separated by a dielectric layer
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0412—Digitisers structurally integrated in a display
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04107—Shielding in digitiser, i.e. guard or shielding arrangements, mostly for capacitive touchscreens, e.g. driven shields, driven grounds

Definitions

  • Embodiments of the present invention relate to a touch screen and a method of fabricating the same.
  • the touch screen As a brand-new human-computer interaction device, the touch screen has a vivid and intuitive operation interface and conforms to the human body's usage habits, which can make the entertainment office more vivid and relaxed.
  • the advantages of high transparency, durability and multi-touch of capacitive touch screens it is widely used in the field of consumer electronics.
  • OGS As a touch screen, OGS has always dominated the customer experience due to its simple solution and very high sensitivity.
  • the existing OGS touch screen process is generally a 5mask (metal bridge) process or a 6mask (ITO bridge) process, but after the ITO coating, the substrate substrate is warped and deformed, and the stress state of the surface of the substrate substrate is affected by the ITO. Destruction, the surface strength of the substrate becomes low.
  • Griffith microcrack theory Griffith believes that there are always many small cracks or defects in the actual material. Under the action of external force, stress concentration occurs near these cracks and defects. When the stress reaches a certain level, the crack begins to expand and leads to fracture. . According to the Griffith microcrack theory, the fracture is not the result of the two-part crystal pulling along the entire interface at the same time, but the crack propagation. There are many special fine textures on the surface of the substrate. When the stress state is impacted and destroyed by the ITO, the surface strength of the substrate becomes low, so that the yield of the touch screen is greatly reduced.
  • a touch screen includes: a substrate substrate; and a reinforcement layer disposed on a surface of the base substrate, the enhancement layer being configured to increase strength of the base substrate.
  • a touch screen fabrication method includes forming a reinforcement layer on a surface of a substrate substrate, the enhancement layer being configured to increase the strength of the substrate.
  • FIG. 1 is a schematic diagram of a touch screen according to an embodiment of the present invention.
  • FIG. 2 is a plan view showing a black matrix disposed on a glass substrate according to an embodiment of the present invention
  • FIG. 3 is a schematic diagram of a touch screen according to another embodiment of the present invention.
  • FIG. 4 is a schematic diagram of a touch screen according to still another embodiment of the present invention.
  • FIG. 5 is a schematic flowchart of a method for fabricating a touch screen according to an embodiment of the present invention
  • FIG. 6 is a schematic flow chart of a method for fabricating a touch screen according to another embodiment of the present invention.
  • FIG. 7 is a schematic flow chart of a method for fabricating a touch screen according to still another embodiment of the present invention.
  • FIG. 8 is a schematic flow chart of a method for fabricating a touch screen according to still another embodiment of the present invention.
  • the present embodiment provides a touch screen, as shown in FIG. 1, comprising a base substrate 1 and a reinforcing layer disposed on a surface of the base substrate, wherein the reinforcing layer is used to increase the strength of the base substrate.
  • the reinforcing layer By providing the reinforcing layer, the probability of warping deformation of the substrate after the ITO coating is reduced, so that the surface of the substrate is subjected to the impact and destruction of the ITO, and the surface strength of the substrate is enhanced, thereby reducing the surface micro crack. The possibility of expansion leading to breakage.
  • the enhancement layer is a transparent photoresist material layer 2, on which the drive electrode 3 and the sensing electrode 5 are disposed, and an insulating layer 4 between the driving electrode and the sensing electrode.
  • the transparent photoresist material layer 2 is disposed on the base substrate 1 so that the stress state of the surface of the base substrate 1 can effectively protect the distribution state of the compressive stress layer of the base substrate 1 when subjected to impact and damage by the electrode layer. Not subject to change, thereby increasing the strength of the surface of the product.
  • the thickness of the transparent photoresist material layer 2 ranges from 0.4 to 5 um.
  • the transparent photoresist material layer 2 has a refractive index greater than 1.67 and is a high refractive transparent photoresist material layer 2.
  • the high-refractive transparent photoresist material layer has the function of eliminating the shadow and can function as a shadowing layer. At the same time, the customer's demand for the shadow elimination effect is achieved at the same time, which effectively simplifies the process flow.
  • the photoresist is a photosensitive material that transfers the pattern on the mask to the surface of the substrate.
  • the enhancement layer is made using a photoresist material.
  • Photoresella include positive and negative photoresists.
  • the exposed portion becomes crosslinked and polymerized due to photochemical reaction, and hardens after development to remain on the surface of the substrate.
  • a negative photoresist can be used to make the enhancement layer.
  • the enhancement layer according to an embodiment of the present invention is not limited thereto, and may be formed using any suitable photoresist material.
  • a black matrix 6 is disposed around the substrate substrate 1 to cover the edge traces, to prevent the edge traces from being visible, and to prevent edge leakage.
  • FIG. 3 Another embodiment provided by the present invention, as shown in FIG. 3, includes a base substrate 1, a reinforcing layer disposed on a surface of the base substrate, the reinforcing layer is used to increase the strength of the base substrate, and the reinforcing layer is transparent.
  • Photoresist material layer 2 The transparent photoresist material layer 2 is provided with a driving electrode 3 and a sensing electrode 5, and an insulating layer 4 between the driving electrode and the sensing electrode.
  • the thickness of the transparent photoresist material layer 2 ranges from 0.4 to 5 um.
  • the refractive index of the transparent photoresist material layer 2 is equal to 1.5, which is a transparent resist material of a common refractive index. It is necessary to add a shadowing layer after the transparent photoresist material layer 2 is formed to achieve the effect of eliminating the shadow.
  • a shadowing layer 7 is disposed between the transparent photoresist material layer and the driving electrode, and the material of the color erasing layer 7 is SiO 2 and Nb 2 O 5 , and the film thickness ratio of SiO 2 and Nb 2 O 5 is, for example, 1:4, the thickness of the shadowing layer 7 is Can make the elimination effect reach level 3.
  • the erasing layer 7 after the transparent photoresist material layer 2 is formed to achieve the effect of erasing, as shown in FIG.
  • the material of the shadow mask layer 7 is SiN x O y
  • the thickness of the shadow mask layer is The refractive index is 1.6 to 1.65, and this method can achieve a level 1 effect.
  • a circle of black matrix 6 is disposed around the base substrate 1 to cover the edge traces, prevent edge traces from being visible, and prevent edge leakage.
  • FIG. 5 is a schematic flowchart of the method.
  • the method can include the following steps.
  • the reinforcing layer is used to increase the strength of the base substrate, the reinforcing layer formed is a transparent photoresist material layer, and the transparent photoresist material layer is formed to have a thickness of 0.4.
  • Um ⁇ 1um a high refractive index transparent photoresist material layer having a refractive index greater than 1.67;
  • the temperature range is 230 ° C ⁇ 250 ° C, forming a driving electrode made of indium tin oxide;
  • a high temperature coating process is applied on the formed insulating layer, and the temperature ranges from 230 ° C to 250 ° C to form a sensing electrode made of indium tin oxide.
  • FIG. 6 is a schematic flow chart of a method for fabricating a touch screen according to another embodiment of the present invention.
  • step 202 changes the thickness of the transparent photoresist material layer formed in step 102 to 1 um to 5 um, and the refractive index is greater than 1.67.
  • the driving electrode layer formed in the corresponding step 103 and the sensing electrode layer formed in 105 are subjected to a low temperature coating process.
  • steps 201 and 204 are the same as steps 101 and 104, respectively.
  • step 203 a low-temperature coating process is applied on the formed transparent photoresist material layer, and the temperature ranges from 30 ° C to 80 ° C.
  • the process parameter is 230-250 ° C / 30 mins, forming a driving electrode made of indium tin oxide; in step 205, a low-temperature coating process is adopted on the formed insulating layer, the temperature range is 30 ° C ⁇ 80 ° C, annealing process parameters For 230 to 250 ° C / 30 mins, a sensing electrode made of indium tin oxide is formed.
  • FIG. 7 is a schematic flowchart of the method.
  • the method includes the following steps.
  • a reinforcing layer on the surface of the base substrate, wherein the reinforcing layer is used to increase the strength of the base substrate, and the reinforcing layer formed is a transparent photoresist material layer, and the transparent photoresist material layer is formed to have a thickness of 1 ⁇ m. ⁇ 5um, a common refractive index transparent photoresist material having a refractive index of 1.5;
  • the material of the shadowing layer is SiO 2 and Nb 2 O 5 , and the film thickness ratio of SiO 2 and Nb 2 O 5 is 1:4 , thickness is
  • the temperature range is 30 ° C ⁇ 80 ° C
  • the annealing process parameters are 230 ⁇ 250 ° C / 30mins, forming a drive electrode made of indium tin oxide
  • the temperature range is 30 ° C ⁇ 80 ° C
  • the annealing process parameters are 230 ⁇ 250 ° C / 30mins, forming a sensing electrode made of indium tin oxide.
  • FIG. 8 is a schematic flow chart of a method for fabricating a touch screen according to another embodiment of the present invention.
  • steps 401 and 402 are the same as steps 301 and 302, respectively, and step 403 is to form a reinforcing layer on the surface of the base substrate in step 402, wherein the reinforcing layer is used to improve the strength of the substrate.
  • the reinforcing layer formed is a transparent photoresist material layer, and the transparent photoresist material layer is formed by a low temperature coating process, the temperature range is 30° C. to 80° C., and the annealing process parameter is 230-250° C./30 mins, and the indium tin oxide is formed.
  • the resulting drive electrode is a transparent photoresist material layer, and the transparent photoresist material layer is formed by a low temperature coating process, the temperature range is 30° C. to 80° C., and the annealing process parameter is 230-250° C./30 mins, and the indium
  • Step 404 is to form an insulating layer on the driving electrode
  • 405 is a low temperature coating process on the formed insulating layer
  • the temperature range is 30 ° C ⁇ 80 ° C
  • the annealing process parameter is 230 ⁇ 250 ° C / 30 mins
  • 406 is formed on the sensing electrode to form a shadowing layer
  • the material of the shadowing layer formed is SiN x O y
  • the thickness of the formed shadowing layer is The resulting image-forming layer has a refractive index of 1.6 to 1.65.
  • the thickness of the enhancement layer of step 302 in FIG. 7 may be changed to 0.4 um to 1 um, and steps 304 and 306 may be changed to a high temperature coating process.
  • the temperature range is from 230 ° C to 250 ° C to form a driving electrode and a sensing electrode made of indium tin oxide.
  • the thickness of the transparent photoresist material layer in step 402 in FIG. 8 can be changed to 0.4 um to 1 um, and steps 403 and 405 are changed to a high temperature coating process, and the temperature range is changed.
  • a driving electrode and a sensing electrode made of indium tin oxide are formed at 230 ° C to 250 ° C.

Landscapes

  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Human Computer Interaction (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Position Input By Displaying (AREA)

Abstract

一种触摸屏及其制作方法。该触摸屏包括：衬底基板；以及设置于衬底基板表面的增强层。增强层被配置为提高所述衬底基板的强度。该触摸屏制作方法包括在衬底基板表面形成一层增强层，所述增强层被配置为提高衬底基板的强度。

Description

一种触摸屏及其制作方法 技术领域
本发明的实施例涉及一种触摸屏及其制作方法。
背景技术
触摸屏作为一种全新的人机交互设备，有着生动直观的操作接口且符合人体的使用习惯，能让娱乐办公变得更加生动和放松。另外，基于电容触摸屏的高透明度、耐用性、多点触摸等优势，在消费电子领域得到广泛的应用。OGS作为触摸屏的一种，因其简单的解决方案以及非常高的灵敏度，一直在顾客体验中占据优势地位。
但现有的OGS触摸屏工艺一般为5mask(金属桥)工艺或6mask(ITO桥)工艺，但ITO镀膜后会造成衬底基板翘曲变形，衬底基板表面的受力状态遭到ITO的冲击和破坏，基板表面强度变低。Griffith微裂纹理论：Griffith认为实际材料中总存在许多细小的裂纹或缺陷，在外力作用下，这些裂纹和缺陷附近就会产生应力集中现象，当应力达到一定程度时，裂纹就开始扩展而导致断裂。根据Griffith微裂纹理论可知，断裂并不是两部分晶体同时沿整个界面拉断，而是裂纹扩展的结果。衬底基板表面存在许多特别细小的纹理，当受力状态遭到ITO的冲击和破坏，基板表面强度变低，使得触摸屏的良率大大降低。
发明内容
根据本发明的一个实施例提供一种触摸屏，包括：衬底基板；以及设置于衬底基板表面的增强层，所述增强层被配置为提高所述衬底基板的强度。
根据本发明的另一个实施例提供一种触摸屏制作方法，包括：在衬底基板表面形成一层增强层，所述增强层被配置为提高衬底基板的强度。
附图说明
为了更清楚地说明本发明实施例的技术方案，下面将对实施例的附图作 简单地介绍，显而易见地，下面描述中的附图仅仅涉及本发明的一些实施例，而非对本发明的限制。
图1为本发明一个实施例的触摸屏示意图；
图2为本发明实施例中黑矩阵设置于玻璃基板的俯视图；
图3为本发明另一个实施例的触摸屏示意图；
图4为本发明又一个实施例的触摸屏示意图；
图5为本发明一个实施例的触摸屏制作方法流程示意图；
图6为本发明另一个实施例的触摸屏制作方法流程示意图；
图7为本发明又一个实施例的触摸屏制作方法流程示意图；
图8为本发明又一个实施例的触摸屏制作方法流程示意图。
具体实施方式
为使本发明实施例的目的、技术方案和优点更加清楚，下面将结合本发明实施例的附图，对本发明实施例的技术方案进行清楚、完整地描述。显然，所描述的实施例是本发明的一部分实施例，而不是全部的实施例。基于所描述的本发明的实施例，本领域普通技术人员在无需创造性劳动的前提下所获得的所有其他实施例，都属于本发明保护的范围。
本实施例提供一种触摸屏，如图1所示，包括衬底基板1，设置于衬底基板表面的增强层，所述增强层用于提高衬底基板的强度。通过设置增强层，减小了ITO镀膜后造成衬底基板翘曲变形的几率，使得衬底基板表面的受力状态遭到ITO的冲击和破坏时，增强基板表面强度，从而降低了表面微小裂纹扩展而导致断裂的可能性。
例如，所述增强层为透明光阻材料层2，所述透明光阻材料层2上设置驱动电极3和感应电极5，以及位于驱动电极和感应电极之间的绝缘层4。
在衬底基板1上设置透明光阻材料层2，使得衬底基板1的表面的受力状态在受到电极层的冲击和破坏时，可以有效的保护衬底基板1的压缩应力层的分布状态不受变化，从而增加产品表面的强度。
例如，透明光阻材料层2的厚度范围为0.4～5um。
例如，透明光阻材料层2的折射率大于1.67，为高折射透明光阻材料层2。该高折射透明光阻材料层具有消影的作用，可以充当消影层的功能，在减 少制程的同时达到客户对消影效果的需求，有效的简化了工艺流程。
光阻是一种感光材料，可将掩模板上的图案转印到基板的表面。在根据本发明的实施例中，利用光阻材料制作增强层。光阻包括正性光阻和负性光阻。以负光阻而言，曝光的部分会因为光化学反应而变成交联状及高分子化，并在显影之后变硬而保留在基板的表面上。例如，可以使用负性光阻来制作增强层。然而，根据本发明实施例的增强层不限于此，可以使用任意合适的光阻材料来形成。
例如，如图2所示在所述衬底基板1周边设置一圈黑矩阵6，以达到遮盖边缘走线，防止边缘走线可视，同时防止边缘漏光的作用。
本发明提供的另一个实施例，如图3所示，包括衬底基板1，设置于衬底基板表面的增强层，所述增强层用于提高衬底基板的强度，所述增强层为透明光阻材料层2。所述透明光阻材料层2上设置驱动电极3和感应电极5，以及位于驱动电极和感应电极之间的绝缘层4。例如，透明光阻材料层2的厚度范围为0.4～5um。所述透明光阻材料层2的折射率等于1.5，为普通折射率的透明光阻材料，需要在透明光阻材料层2制成后增加消影层，以达到消影的效果。
例如，在所述透明光阻材料层和驱动电极间设置消影层7，所述消影层7的材料为SiO2和Nb2O5，SiO2和Nb2O5的膜厚比例例如为1:4，所述消影层7的厚度为
Figure PCTCN2016098954-appb-000001
可以使得消影效果达到3级。
例如，也可以在透明光阻材料层2制成后增加消影层7，以达到消影的效果，如图4所示。所述消影层7的材料为SiNxOy，所述消影层的厚度为
Figure PCTCN2016098954-appb-000002
折射率为1.6～1.65，这种方法可以使得消影效果达到1级。
在所述衬底基板1周边设置一圈黑矩阵6，以达到遮盖边缘走线，防止边缘走线可视，同时防止边缘漏光的作用。
本发明实施例提供了一种触摸屏制作方法的实施例，如图5所示为该方法的流程示意图。例如，该方法可以包括以下步骤。
101、在衬底基板表面周边采用黄光工艺制备一圈黑矩阵；
102、在衬底基板表面形成一层增强层，所述增强层用于提高衬底基板的强度，所形成的增强层为透明光阻材料层，所形成的透明光阻材料层为厚度为0.4um～1um，折射率大于1.67的高折射率透明光阻材料层；
103、在所形成的透明光阻材料层上采用高温镀膜工艺，温度范围为230℃～250℃，形成由氧化铟锡制成的驱动电极；
104、在驱动电极上形成一层绝缘层；
105、在所形成的绝缘层上采用高温镀膜工艺，温度范围为230℃～250℃，形成由氧化铟锡制成的感应电极。
例如，图6为根据本发明另一个实施例的触摸屏制作方法的流程示意图。在该方法中，步骤202将步骤102中形成的透明光阻材料层为厚度改为1um～5um，折射率大于1.67。对应的步骤103中形成的驱动电极层和105中形成的感应电极层采用低温镀膜工艺。例如，如图6所示，步骤201、204分别与步骤101、104相同，在步骤203中，在所形成的透明光阻材料层上采用低温镀膜工艺，温度范围为30℃～80℃，退火工艺参数为230～250℃/30mins，形成由氧化铟锡制成的驱动电极；在步骤205中，在所形成的绝缘层上采用低温镀膜工艺，温度范围为30℃～80℃，退火工艺参数为230～250℃/30mins，形成由氧化铟锡制成的感应电极。
本发明的实施例提供了另一种触摸屏制作方法，如图7所示为该方法的流程示意图。例如，该方法包括如下步骤。
301、在衬底基板表面周边采用黄光工艺制备一圈黑矩阵；
302、在衬底基板表面形成一层增强层，所述增强层用于提高衬底基板的强度，所形成的增强层为透明光阻材料层，所形成的透明光阻材料层为厚度为1um～5um，折射率为1.5的普通折射率透明光阻材料；
303、在所形成的透明光阻材料层上形成一层消影层，所述消影层的材料为SiO2和Nb2O5，SiO2和Nb2O5的膜厚比例为1:4，厚度为
Figure PCTCN2016098954-appb-000003
304、在所形成的消影层上采用低温镀膜工艺，温度范围为30℃～80℃，退火工艺参数为230～250℃/30mins，形成由氧化铟锡制成的驱动电极；
305、在驱动电极上形成一层绝缘层；
306、在所形成的绝缘层上采用低温镀膜工艺，温度范围为30℃～80℃，退火工艺参数为230～250℃/30mins，形成由氧化铟锡制成的感应电极。
例如，图8为根据本发明另一个实施例的触摸屏制作方法的流程示意图。如图8所示，步骤401、402分别与步骤301、302相同，步骤403为在步骤402中在衬底基板表面形成一层增强层，所述增强层用于提高衬底基板的强 度，所形成的增强层为透明光阻材料层，所形成的透明光阻材料层上采用低温镀膜工艺，温度范围为30℃～80℃，退火工艺参数为230～250℃/30mins，形成由氧化铟锡制成的驱动电极。步骤404为在驱动电极上形成一层绝缘层，405为在所形成的绝缘层上采用低温镀膜工艺，温度范围为30℃～80℃，退火工艺参数为230～250℃/30mins，形成由氧化铟锡制成的感应电极，406为在感应电极上形成一层消影层，所形成的消影层的材料为SiNxOy，所形成的消影层的厚度为
Figure PCTCN2016098954-appb-000004
所形成的消影层的折射率为1.6～1.65。
例如，如图7所示的方法，也可以将图7中的步骤302的增强层，即透明光阻材料层的厚度改为0.4um～1um，同时将步骤304和306改为采用高温镀膜工艺，温度范围为230℃～250℃，形成由氧化铟锡制成的驱动电极和感应电极。
例如，如图8所示的方法，还可以将图8中的步骤402中的透明光阻材料层的厚度改为0.4um～1um，同时将步骤403和405改为采用高温镀膜工艺，温度范围为230℃～250℃，形成由氧化铟锡制成的驱动电极和感应电极。
以上所述仅是本发明的示范性实施方式，而非用于限制本发明的保护范围，本发明的保护范围由所附的权利要求确定。
本申请要求于2016年1月4日递交的中国专利申请第201610004797.1号的优先权，在此全文引用上述中国专利申请公开的内容以作为本申请的一部分。

Claims (26)

  1. 一种触摸屏，包括：
    衬底基板；以及
    设置于衬底基板表面的增强层，所述增强层被配置为提高所述衬底基板的强度。
  2. 如权利要求1所述触摸屏，其中，所述增强层为透明光阻材料层。
  3. 如权利要求2所述触摸屏，其中，所述透明光阻材料层的折射率大于1.67。
  4. 如权利要求2或3所述触摸屏，还包括：设置在所述透明光阻材料层上的驱动电极和感应电极，以及位于所述驱动电极和所述感应电极之间的绝缘层。
  5. 如权利要求2所述触摸屏，其中，所述透明光阻材料层的折射率为1.5。
  6. 如权利要求5所述触摸屏，还包括设置在所述透明光阻材料层上的消影层。
  7. 如权利要求6所述触摸屏，还包括：设置在所述透明光阻材料层上的驱动电极和感应电极，以及位于所述驱动电极和所述感应电极之间的绝缘层，所述消影层位于所述透明光阻材料层和所述驱动电极之间。
  8. 如权利要求7所述触摸屏，其中，所述消影层的材料为SiO2和Nb2O5，SiO2和Nb2O5的膜厚比例为1:4。
  9. 如权利要求8所述触摸屏，其中，所述消影层的厚度为
    Figure PCTCN2016098954-appb-100001
  10. 如权利要求6所述触摸屏，其中，所述消影层设置于所述感应电极上方。
  11. 如权利要求10所述触摸屏，其中，所述消影层的材料为SiNxOy。
  12. 如权利要求11所述触摸屏，其中，所述消影层的厚度为
    Figure PCTCN2016098954-appb-100002
  13. 如权利要求6-12任一项所述触摸屏，其中，所述消影层的折射率为1.6～1.65。
  14. 如权利要求2所述触摸屏，其中，所述透明光阻材料层的厚度为0.4～5um。
  15. 如权利要求1所述触摸屏，还包括位于衬底基板与所述增强层之间的黑矩阵，所述黑矩阵位于所述衬底基板的周边。
  16. 一种触摸屏制作方法，包括：在衬底基板表面形成一层增强层，所述增强层被配置为提高衬底基板的强度。
  17. 如权利要求16所述触摸屏制作方法，其中，所形成的增强层为透明光阻材料层。
  18. 如权利要求17所述触摸屏制作方法，其中，所形成的透明光阻材料层的厚度为0.4um～1um。
  19. 如权利要求18所述触摸屏制作方法，其中，在所形成的透明光阻材料层上采用在230℃～250℃的温度范围内，形成由氧化铟锡制成的驱动电极和感应电极。
  20. 如权利要求17所述触摸屏制作方法，其中，所形成的透明光阻材料层的厚度为1um～5um。
  21. 如权利要求20所述触摸屏制作方法，其中，在所形成的透明光阻材料层上在30℃～80℃的温度范围内，形成由氧化铟锡制成的驱动电极和感应电极，并且在230～250℃的温度下退火30分钟。
  22. 如权利要求19或21所述触摸屏制作方法，其中，所形成的透明光阻材料层的折射率大于1.67。
  23. 如权利要求19或21所述触摸屏制作方法，其中，所形成的透明光阻材料层的折射率等于1.5。
  24. 如权利要求23所述触摸屏制作方法，其中，在所形成的透明光阻材料层和驱动电极间形成一层消影层，所述消影层的材料为SiO2和Nb2O5，SiO2和Nb2O5的膜厚比例为1:4，厚度为
    Figure PCTCN2016098954-appb-100003
  25. 如权利要求23所述触摸屏制作方法，其中，在所形成的感应电极上形成一层消影层，所形成的消影层的材料为SiNxOy，厚度为
    Figure PCTCN2016098954-appb-100004
    折射率为1.6～1.65。
  26. 如权利要求16所述触摸屏制作方法，还包括在所述衬底基板与所述增强层之间采用黄光工艺制备形成的黑矩阵，所形成的黑矩阵位于所述衬底基板的周边。
PCT/CN2016/098954 2016-01-04 2016-09-14 一种触摸屏及其制作方法 Ceased WO2017118083A1 (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US15/535,507 US10691236B2 (en) 2016-01-04 2016-09-14 Touch screen and manufacturing method thereof

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201610004797.1A CN105677097A (zh) 2016-01-04 2016-01-04 一种触摸屏及其制作方法
CN201610004797.1 2016-01-04

Publications (1)

Publication Number Publication Date
WO2017118083A1 true WO2017118083A1 (zh) 2017-07-13

Family

ID=56298936

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2016/098954 Ceased WO2017118083A1 (zh) 2016-01-04 2016-09-14 一种触摸屏及其制作方法

Country Status (3)

Country Link
US (1) US10691236B2 (zh)
CN (1) CN105677097A (zh)
WO (1) WO2017118083A1 (zh)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105677097A (zh) 2016-01-04 2016-06-15 京东方科技集团股份有限公司 一种触摸屏及其制作方法
CN109117525A (zh) * 2018-07-25 2019-01-01 京东方科技集团股份有限公司 一种触摸屏的消影模拟方法和消影模拟装置
CN110888557A (zh) * 2019-12-24 2020-03-17 苏州敏柔电子科技有限公司 一种电容触控屏及其制作方法
CN111399692A (zh) * 2020-04-29 2020-07-10 业成科技（成都）有限公司 触控面板及其制备方法、电子设备
CN114546178B (zh) 2020-11-26 2025-09-02 合肥鑫晟光电科技有限公司 一种触控面板及其制备方法和显示装置

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104267859A (zh) * 2014-09-16 2015-01-07 合肥鑫晟光电科技有限公司 触摸屏及其制作方法、触摸显示装置
CN104461157A (zh) * 2014-12-25 2015-03-25 合肥鑫晟光电科技有限公司 触摸面板的制作方法、触摸面板、触摸屏和显示装置
CN204314858U (zh) * 2014-12-13 2015-05-06 合肥乐凯科技产业有限公司 一种电容式触摸屏用透明硬化膜
CN104834425A (zh) * 2015-05-19 2015-08-12 蓝思科技（长沙）有限公司 一种优化机械强度的触控屏结构
CN105677097A (zh) * 2016-01-04 2016-06-15 京东方科技集团股份有限公司 一种触摸屏及其制作方法
CN105892731A (zh) * 2014-10-29 2016-08-24 祥达光学（厦门）有限公司 触控屏幕

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102438822B (zh) * 2009-03-31 2015-11-25 帝人株式会社 透明导电性层叠体和透明触摸面板
TW201133310A (en) * 2010-03-26 2011-10-01 Applied Vacuum Coating Technologies Co Ltd Integration-type touch panel
KR101045026B1 (ko) * 2010-11-12 2011-06-30 (주)비엠씨 투명 도전성 적층 필름, 이의 제조방법 및 이를 포함하는 터치패널
JP5964273B2 (ja) * 2013-05-27 2016-08-03 日東電工株式会社 タッチパネルセンサ
KR102117103B1 (ko) * 2013-09-17 2020-06-01 삼성디스플레이 주식회사 터치 스크린 패널 일체형 표시장치
US20150123911A1 (en) * 2013-11-06 2015-05-07 Light Polymers Holding Index matching and touch panel improvements in display devices
TWI527063B (zh) * 2013-11-15 2016-03-21 Far Eastern New Century Corp Conductive transparent laminates, patterned conductive transparent laminates and touch panels
CN104571721B (zh) * 2015-02-17 2018-11-23 合肥鑫晟光电科技有限公司 一种透明导电氧化物图案消隐结构、触控面板及显示装置
CN104635991B (zh) 2015-03-11 2019-01-11 合肥鑫晟光电科技有限公司 一种消影结构、触摸屏及其制备方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104267859A (zh) * 2014-09-16 2015-01-07 合肥鑫晟光电科技有限公司 触摸屏及其制作方法、触摸显示装置
CN105892731A (zh) * 2014-10-29 2016-08-24 祥达光学（厦门）有限公司 触控屏幕
CN204314858U (zh) * 2014-12-13 2015-05-06 合肥乐凯科技产业有限公司 一种电容式触摸屏用透明硬化膜
CN104461157A (zh) * 2014-12-25 2015-03-25 合肥鑫晟光电科技有限公司 触摸面板的制作方法、触摸面板、触摸屏和显示装置
CN104834425A (zh) * 2015-05-19 2015-08-12 蓝思科技（长沙）有限公司 一种优化机械强度的触控屏结构
CN105677097A (zh) * 2016-01-04 2016-06-15 京东方科技集团股份有限公司 一种触摸屏及其制作方法

Also Published As

Publication number Publication date
US10691236B2 (en) 2020-06-23
US20180059835A1 (en) 2018-03-01
CN105677097A (zh) 2016-06-15

Similar Documents

Publication Publication Date Title
WO2017118083A1 (zh) 一种触摸屏及其制作方法
WO2015143862A1 (zh) 触摸屏、其制作方法及显示装置
WO2016033887A1 (zh) 触控面板及其制作方法
TW201040818A (en) Capacitive touch panel structure with high optical uniformity
WO2014131227A1 (zh) 单层触摸屏及其制作方法和触摸屏显示器
CN102955288B (zh) 一种彩膜基板、制作方法及液晶触摸显示装置
CN201218888Y (zh) 整合触控结构的显示面板
TWI479398B (zh) 觸控顯示裝置及其形成方法
US20180157082A1 (en) Touch panel and method of manufacturing the same
CN105205469A (zh) 指纹识别装置以及指纹识别装置的制作方法
KR101437901B1 (ko) 터치스크린패널용 데코레이션 윈도우 글라스 및 이의 제조방법
WO2016155234A1 (zh) 触摸屏、其制作方法及显示装置
WO2015027639A1 (zh) 触摸屏、触摸屏的制作方法及显示装置
US10168846B2 (en) Touch display panel, manufacturing method, display device and touch substrate
US20170052615A1 (en) Display device, touch panel and method for manufacturing the same
US10698248B2 (en) Counter substrate, display panel, display device and fabricating method
TW201403687A (zh) 觸控面板製造方法
WO2015085772A1 (zh) 基板的制作方法
US9483148B2 (en) Method for manufacturing touch substrate
WO2016101495A1 (zh) 制作触摸面板的方法、触摸面板、触摸屏和显示装置
CN102855042B (zh) 触控面板的制造方法
US20160370923A1 (en) OGS Touch Screen, Manufacturing Method Thereof and OGS Touch Device
CN102176428B (zh) 强化基板及其制造方法
CN204479880U (zh) 一种彩膜基板及液晶显示装置
TW201413532A (zh) 觸控面板製造方法

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 15535507

Country of ref document: US

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 16883213

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 16883213

Country of ref document: EP

Kind code of ref document: A1

32PN Ep: public notification in the ep bulletin as address of the adressee cannot be established

Free format text: NOTING OF LOSS OF RIGHTS PURSUANT TO RULE 112(1) EPC (EPO FORM 1205A DATED 280619)

122 Ep: pct application non-entry in european phase

Ref document number: 16883213

Country of ref document: EP

Kind code of ref document: A1