WO2017105275A1 - Cellule optique à flux de rayonnement parallèle à base de led - Google Patents

Cellule optique à flux de rayonnement parallèle à base de led Download PDF

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Publication number
WO2017105275A1
WO2017105275A1 PCT/RU2015/000901 RU2015000901W WO2017105275A1 WO 2017105275 A1 WO2017105275 A1 WO 2017105275A1 RU 2015000901 W RU2015000901 W RU 2015000901W WO 2017105275 A1 WO2017105275 A1 WO 2017105275A1
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WO
WIPO (PCT)
Prior art keywords
photodiode
led emitter
radiation
heterostructures
gas cell
Prior art date
Application number
PCT/RU2015/000901
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English (en)
Russian (ru)
Inventor
Михаил Александрович ВЕЛИКОТНЫЙ
Андрей Александрович ПЕТУХОВ
Original Assignee
Общество С Ограниченной Ответственностью "Микросенсор Технолоджи"
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Общество С Ограниченной Ответственностью "Микросенсор Технолоджи" filed Critical Общество С Ограниченной Ответственностью "Микросенсор Технолоджи"
Priority to PCT/RU2015/000901 priority Critical patent/WO2017105275A1/fr
Publication of WO2017105275A1 publication Critical patent/WO2017105275A1/fr

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
    • G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
    • G01N21/3504—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing gases, e.g. multi-gas analysis

Definitions

  • the present invention generally relates to devices for determining gases in the analyzed medium, and in particular, to optical cells based on LEDs of the spectral range 1600-5000 nm for chemical sensors.
  • a device for determining gases in an analyzed medium, comprising a tube with a radiation source and receiver outside the gas cell, and there are also spherical mirrors for directing radiation.
  • This device solved some of the shortcomings of the previous device, however, it also has additional difficulties in the form of directing the radiation from the source to the gas cell and further to the radiation receiver, which results in a large attenuation of the radiation before it hits the receiver.
  • the objective of the present invention is to provide a device for determining gases in the analyzed medium, which is characterized by a large measurement accuracy, efficient use of radiation from a radiation source, lack of the need for tuning before starting measurements.
  • a device for determining gases in the analyzed medium, comprising a housing in which at least one LED emitter, a gas cuvette, a photodiode, an electronic unit, first and second spherical mirrors are placed, the housing having openings for the analyte to enter the gas cuvette, at least at least one LED emitter is configured to generate radiation in the spectral range 1600-5000 nm, the gas cell is located with the possibility of passing through it radiation from at least one an LED emitter, a photodiode is arranged to receive radiation from at least one LED emitter, the electronic unit is configured to control at least one LED emitter and includes a photodiode preamplifier board, a first spherical mirror is located in front of the gas cell with the possibility of creating a parallel radiation beam from a smaller at least one LED emitter in the direction of the gas cell, the second spherical mirror is located after the gas cell with possible of radiation of the assembly, passing through the gas cell, and direct it to the photod
  • the technical result of the proposed device consists in high accuracy of measurement and in the absence of the need to adjust before starting measurements due to the configuration of the spherical mirrors contained in the device.
  • mounting at least one LED emitter and / or photodiode on a sapphire crystal eliminates unnecessary loss of radiation power from the radiation source to interact with the components of the proposed device, and thus ensures efficient use of radiation from the radiation source.
  • At least one LED emitter is connected to the electronic unit via a first gold wire passing from one surface of the at least one LED emitter through an opening in the upper part of the device between the frames of the first spherical mirror and the second gold wire passing from another surface of at least one LED emitter through an opening in the lower part of the device between the frames of the first spherical mirror.
  • the photodiode is connected to the electronic unit via a first gold wire passing from one surface of the photodiode through an opening in the upper part of the device between the rims of the second spherical mirror, and a second gold wire passing from another surface of the photodiode through an opening in the lower part of the device between frames of the second spherical mirror.
  • the at least one LED emitter comprises at least one LED chip made on the basis of the first heterostructures and / or based on the second heterostructures, the first heterostructures having a substrate containing GaSb, an active layer located above the substrate, containing GalnAsSb solid solution located above the active layer; a boundary layer for localization of the main carriers; containing AIGaAsSb solid solution located above the boundary layer
  • the contact layer containing GaSb and the buffer layer containing GalnAsSb solid solution, and the second heterostructures have a substrate containing InAs, a barrier layer containing InSbP, and an active layer containing InAsSb (P) and located on or below the barrier layer.
  • the buffer layer of the first heterostructures is located between the substrate and the active layer and contains less indium than the active layer.
  • the InSbP barrier layer is located on the substrate, and the InAsSbP active layer is located on the barrier layer.
  • each LED chip based on the second heterostructures comprises a first contact made on the substrate side and a second contact made on the active layer side.
  • the InAsSb active region is located on the substrate, and the InSbP barrier layer is located on the active region.
  • the photodiode and / or reference photodiode are made on the basis of a heterostructure comprising a sequentially arranged substrate containing InAs, an active layer containing InAsSb, and a barrier layer containing InSbP.
  • the photodiode and / or reference photodiode are made on the basis of a heterostructure containing a sequentially arranged substrate containing GaSb, an active layer containing GalnAsSb, layers of electrical and optical restriction containing AIGaAsSb, and a contact layer containing GaSb.
  • FIG. 1 shows a device for detecting gases in a test medium according to the present invention.
  • a device for detecting gases in an analyzed medium which may also be called an optical cell for chemical sensors and in which LEDs of the spectral range 1600-5000 nm are used as radiation sources.
  • a device for determining gases in the analyzed medium contains a housing that has openings for the analyte to enter the gas cell 7 and in which the LED emitter 5 is located, which can emit in the spectral range 1600-5000 nm , gas cuvette 7, photodiode 8, electronic unit, first and second spherical mirrors 4, 14.
  • the gas cuvette 7 is located with the possibility of radiation passing through it from the LED emitter 5, and the photodiode 8 is arranged to receive radiation from the LED emitter 5, which passed through the gas cuvette 7.
  • the electronic unit is configured to control the LED emitter 5 and contains a board 10 of the preamplifier of the photodiode 8 and an electric board 1 1 of the driver.
  • the device case additionally has a receiver (2) and a threaded cover (1), and thrust rings (9) are used to fix the electronic side boards.
  • the first spherical mirror 4 is located in front of the gas cell 7 with the possibility of creating a parallel beam of radiation from the LED emitter 5 in the direction of the gas cell 7, and the second spherical mirror 14 is located after the gas cell 7 with the possibility of assembling the radiation transmitted through the gas cell 7 and directing it to photodiode 8.
  • the optical cell is a cylinder 80 mm long and 20 mm in diameter.
  • the location of the spherical mirrors 4, 14 at the opposite ends of the device body allows you to have a parallel stream of radiation from the LED emitter 5, which ensures maximum efficiency in the use of radiation, since almost all the radiation generated by the LED emitter 5 reaches the sensitive area of the photodiode 8.
  • the LED emitter 5 and the photodiode 8 are each mounted on sapphire glasses 6, 16, which ensures that the radiation from the LED emitter 5 is not overly shaded by the device components, thereby increasing the efficiency of radiation use.
  • sapphire glasses 6, 16 Other embodiments are also possible in which only an LED emitter or only a photodiode is mounted on a sapphire crystal.
  • other glasses that are transparent in the required spectral range for example, BaF 2 -based glasses, can be used.
  • the number of components of the specified device namely the number of LED emitters, can be increased.
  • the LED emitter 5 and the photodiode 8 are glued to the glass 6, 16 with the side with a solid gold contact using the conductive glue and simultaneously gold wire was glued.
  • the LED emitter 5 is connected to the electronic unit, namely, the driver circuit board 1 1, through the first gold wire passing from the surface of the LED emitter 5 through the upper hole between the frames of the first spherical mirror 4 and the entire LED module 3, and the second gold wire passing from the surface on the other side of the LED emitter 5 through the hole between the frames of the first spherical mirror 4 and the entire LED module 3 to the driver circuit board 1 1 on the bottom side design and provides said second gold wire connected to the annular contact welding, brazing or other method.
  • the photodiode 8 is connected to the electronic unit, and namely to the preamplifier board 10, by means of gold wires in a similar manner.
  • connection of the LED emitter and the photodiode with the electronic unit also provides a more efficient arrangement of components in the proposed device, which allows for greater accuracy in determining gases in the analyzed medium.
  • the radiation emitted by the LED emitter (5) is collected by the first spherical mirror 4 and sent in the form of a parallel radiation beam to the gas cell (7).
  • the radiation not absorbed by the gas is collected by the second spherical mirror 14 located behind the photodiode (8) and sent to the sensitive area of the photodiode.
  • the sensitivity of the sensor based on such a device is 200-300 ppm.
  • the LED emitter used in the disclosed device may comprise LED chips based on the first heterostructures and / or second heterostructures.
  • LED chips based on the first heterostructures are disclosed in the patent of EA 01830 of the same applicant, entitled "GalnAsSb solid solution heterostructure, method for its manufacture and LED based on this heterostructure" and are characterized by the following features.
  • LED chips based on the first heterostructures have a substrate containing GaSb, an active layer containing a GalnAsSb solid solution and located above the substrate, a boundary layer for localization main carriers containing AIGaAsSb solid solution and located above the active layer, a contact layer containing GaSb and located above the bounding layer, and a buffer layer containing GalnAsSb solid solution.
  • the buffer layer of the first heterostructure is a low-doped p ° buffer layer with a composition close to GaSb, due to which the inverse p- ⁇ junction of the p ° -GalnAsSb / n-GalnAsSb ensures the localization of holes in the active region near the heterointerface between the buffer layer and the active layer.
  • growing a structurally perfect p ° -GalnAsSb layer with a minimum concentration of impurities and defects allows minimizing the influence of defects growing from the substrate into the active region, which leads to a decrease in deep acceptor levels and, accordingly, the fraction of Shockley-Reed Hall nonradiative recombination.
  • the heterostructure is grown with a low level of doping of the buffer layer p °, i.e. By a level close to their own concentration, they receive a significant increase in quantum efficiency, and the direct operating voltage of such a heterostructure increases slightly, i.e. not several times, as is the case in thyristor-type structures.
  • lead is not used as a neutral solvent. LED chips made on the basis of the first heterostructures emit in the mid-infrared range 1800-2400 nm.
  • the buffer layer of the first heterostructures can be located between the substrate and the active layer and contains less indium than the active layer.
  • LED chips based on the first heterostructures can have a first contact made on the substrate side and a second contact made on the active layer side. It is also possible that the LED chip based on the first heterostructures has a first contact on the active layer side connected to the contact layer and a second contact on the active layer side connected to the substrate. In some cases, the first contact is solid, and the second contact is partially coated on the surface of the LED chip.
  • LED chips based on second heterostructures are disclosed in patent EA 018435 of the same applicant, entitled "Method for manufacturing heterostructures (options) for the mid-IR range, heterostructure (options) and LED and photodiode based on this heterostructure".
  • the second heterostructures having a substrate containing InAs, a barrier layer containing InSbP, and an active layer containing InAsSb (P) and located on or below the barrier layer.
  • LED chips made on the basis of second heterostructures emit in the mid-infrared range 2600–4700 nm.
  • the barrier layer is located on the substrate, and the active layer is located on the barrier layer.
  • the LED chips based on the second heterostructures contain a first contact made on the substrate side and a second contact made on the active layer side, or it is possible that LED chips based on the second heterostructures contain at least two contacts, made from the side of the LED opposite the radiating side of the LED.
  • the active region in the second heterostructures is located on the substrate, and the barrier layer is located on the active region, and in this case it is possible that the LED chips based on the second heterostructures have a first contact made on the side of the barrier layer and a second contact made on the substrate side, and when the LED chips based on the second heterostructures contain at least two contacts made on the side of the LED opposite the radiating side of the LED.
  • the first contact of the LED chips based on the second heterostructures is solid, and the second contact is partially coated on the surface of the LED chip.
  • the photodiode is made on the basis of a heterostructure, the manufacturing technology of which is described in Eurasian patent N ° 018300 “Heterostructure based on a GalnAsSb solid solution, method for its manufacture and LED based on this heterostructure” of the present applicant.
  • the specified heterostructure contains a sequentially located substrate containing GaSb, an active layer containing GalnAsSb, electrical and optical confinement layers containing AIGaAsSb, and a contact layer containing GaSb.

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)

Abstract

L'invention concerne dans son ensemble des dispositif de détermination de gaz dans un milieu d'analyse, et notamment des cellules optiques utilisant des LED dans une plage spectrale de 1600-5000 nm pour des détecteurs de substances chimiques. Le dispositif pour déterminer des gaz dans un milieu d'analyse comprend un corps dans lequel sont disposés au moins un émetteur LED, une cuvette de gaz, une photodiode, une unité électronique, et des premier et second miroirs sphériques; le corps comprend des ouvertures pour faire pénétrer un milieu d'analyse dans la cuvette de gaz, au moins un émetteur LED peut générer un rayonnement dans une plage spectrale de 1600-5000 nm, la cuvette de gaz est disposée de manière à pouvoir être traversée par un rayonnement provenant dudit au moins un émetteur LED, la photodiode est disposée de manière à recevoir le rayonnement provenant dudit au moins un émetteur LED, l'unité électronique permet de commander au moins un émetteur LED et comprend une carte de pré-amplification de photodiode, le premier miroir sphérique est disposé en avant de la cuvette de gaz de manière à créer un faisceau parallèle de rayonnement depuis au moins un émetteur LED vers la cuvette de gaz, le second miroir sphérique est disposé après la cuvette de gaz de manière à collecter le rayonnement qui a traversé la cuvette de gaz et à le diriger vers la photodiode, et au moins un émetteur LED et/ou une photodiode est monté sur un verre en saphir.
PCT/RU2015/000901 2015-12-18 2015-12-18 Cellule optique à flux de rayonnement parallèle à base de led WO2017105275A1 (fr)

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PCT/RU2015/000901 WO2017105275A1 (fr) 2015-12-18 2015-12-18 Cellule optique à flux de rayonnement parallèle à base de led

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PCT/RU2015/000901 WO2017105275A1 (fr) 2015-12-18 2015-12-18 Cellule optique à flux de rayonnement parallèle à base de led

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU5030U1 (ru) * 1996-04-25 1997-09-16 Российский научно-исследовательский институт "Электронстандарт" Оптический абсорбционный газоанализатор
RU2286618C2 (ru) * 2002-07-16 2006-10-27 Борис Анатольевич Матвеев Полупроводниковый диод для инфракрасного диапазона спектра
US20080218759A1 (en) * 2007-03-08 2008-09-11 Sensors For Medicine And Science, Inc. Light emitting diode for harsh environments
EA018300B1 (ru) * 2012-09-07 2013-06-28 Ооо "Лед Микросенсор Нт" ГЕТЕРОСТРУКТУРА НА ОСНОВЕ ТВЁРДОГО РАСТВОРА GaInAsSb, СПОСОБ ЕЁ ИЗГОТОВЛЕНИЯ И СВЕТОДИОД НА ОСНОВЕ ЭТОЙ ГЕТЕРОСТРУКТУРЫ
EA018435B1 (ru) * 2012-09-14 2013-07-30 Ооо "Лед Микросенсор Нт" Способ изготовления гетероструктур (варианты) для среднего ик-диапазона, гетероструктура (варианты) и светодиод и фотодиод на основе этой гетероструктуры
US8692997B2 (en) * 2010-08-25 2014-04-08 Bah Holdings Llc Optical gas and/or particulate sensors

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU5030U1 (ru) * 1996-04-25 1997-09-16 Российский научно-исследовательский институт "Электронстандарт" Оптический абсорбционный газоанализатор
RU2286618C2 (ru) * 2002-07-16 2006-10-27 Борис Анатольевич Матвеев Полупроводниковый диод для инфракрасного диапазона спектра
US20080218759A1 (en) * 2007-03-08 2008-09-11 Sensors For Medicine And Science, Inc. Light emitting diode for harsh environments
US8692997B2 (en) * 2010-08-25 2014-04-08 Bah Holdings Llc Optical gas and/or particulate sensors
EA018300B1 (ru) * 2012-09-07 2013-06-28 Ооо "Лед Микросенсор Нт" ГЕТЕРОСТРУКТУРА НА ОСНОВЕ ТВЁРДОГО РАСТВОРА GaInAsSb, СПОСОБ ЕЁ ИЗГОТОВЛЕНИЯ И СВЕТОДИОД НА ОСНОВЕ ЭТОЙ ГЕТЕРОСТРУКТУРЫ
EA018435B1 (ru) * 2012-09-14 2013-07-30 Ооо "Лед Микросенсор Нт" Способ изготовления гетероструктур (варианты) для среднего ик-диапазона, гетероструктура (варианты) и светодиод и фотодиод на основе этой гетероструктуры

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