WO2017093142A1 - Élément comportant une couche de liaison quintuple contenant de l'argent, et procédé de production - Google Patents

Élément comportant une couche de liaison quintuple contenant de l'argent, et procédé de production Download PDF

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Publication number
WO2017093142A1
WO2017093142A1 PCT/EP2016/078879 EP2016078879W WO2017093142A1 WO 2017093142 A1 WO2017093142 A1 WO 2017093142A1 EP 2016078879 W EP2016078879 W EP 2016078879W WO 2017093142 A1 WO2017093142 A1 WO 2017093142A1
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WIPO (PCT)
Prior art keywords
metal
component
phase
connecting element
silver
Prior art date
Application number
PCT/EP2016/078879
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German (de)
English (en)
Inventor
Mathias Wendt
Original Assignee
Osram Opto Semiconductors Gmbh
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Filing date
Publication date
Application filed by Osram Opto Semiconductors Gmbh filed Critical Osram Opto Semiconductors Gmbh
Publication of WO2017093142A1 publication Critical patent/WO2017093142A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
    • B23K1/0016—Brazing of electronic components
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/19—Soldering, e.g. brazing, or unsoldering taking account of the properties of the materials to be soldered
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
    • B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
    • B23K35/0233—Sheets, foils
    • B23K35/0238—Sheets, foils layered
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    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
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    • H05K3/3463—Solder compositions in relation to features of the printed circuit board or the mounting process
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/325—Material
    • H01L2224/32505—Material outside the bonding interface, e.g. in the bulk of the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/832—Applying energy for connecting
    • H01L2224/83201—Compression bonding
    • H01L2224/83203—Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding
    • H01L2224/83204—Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding with a graded temperature profile
    • H—ELECTRICITY
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/83801—Soldering or alloying
    • H01L2224/8382—Diffusion bonding
    • H01L2224/83825—Solid-liquid interdiffusion
    • H—ELECTRICITY
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/83909—Post-treatment of the layer connector or bonding area
    • H01L2224/83948—Thermal treatments, e.g. annealing, controlled cooling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H—ELECTRICITY
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12042—LASER
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress
    • H01L2924/3511—Warping
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    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
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    • H01L2924/3512—Cracking
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
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    • H01L2924/365—Metallurgical effects
    • H01L2924/3651—Formation of intermetallics
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/03—Conductive materials
    • H05K2201/0332—Structure of the conductor
    • H05K2201/0335—Layered conductors or foils
    • H05K2201/0338—Layered conductor, e.g. layered metal substrate, layered finish layer, layered thin film adhesion layer
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/03—Conductive materials
    • H05K2201/0332—Structure of the conductor
    • H05K2201/0335—Layered conductors or foils
    • H05K2201/0341—Intermediate metal, e.g. before reinforcing of conductors by plating
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/06—Thermal details
    • H05K2201/068—Thermal details wherein the coefficient of thermal expansion is important
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09—Shape and layout
    • H05K2201/09009—Substrate related
    • H05K2201/09136—Means for correcting warpage
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10613—Details of electrical connections of non-printed components, e.g. special leads
    • H05K2201/10954—Other details of electrical connections
    • H05K2201/10984—Component carrying a connection agent, e.g. solder, adhesive
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/11—Treatments characterised by their effect, e.g. heating, cooling, roughening
    • H05K2203/1194—Thermal treatment leading to a different chemical state of a material, e.g. annealing for stress-relief, aging

Definitions

  • the invention relates to a component. Furthermore, the invention relates to a method for producing a component.
  • An object of the invention is a component
  • the tasks are performed by a device according to the
  • the device includes a first component, a second component, and a
  • the connecting element is between the first component and the second component
  • the connecting element has at least one first phase or consists thereof.
  • the first phase comprises or consists of silver and at least four other metals.
  • the metals are different from each other.
  • the metals are capable of reacting at a processing temperature of 200 ° C, so that a thermo-mechanically stable connecting element is or is generated.
  • "reacting" means that the metals react chemically, in particular a metal alloy
  • the component has a first component and / or a second component.
  • the first component and / or the second component may be selected from a different number of materials and elements.
  • the first and / or second components may each be selected from a group including sapphire, silicon nitride, a semiconductor material
  • one of the two components may be a semiconductor or ceramic wafer, for example, a shaped material of sapphire, silicon, germanium, silicon nitride, alumina, a luminescent ceramic such as YAG.
  • at least one component is formed as a printed circuit board (PCB), as a metallic lead frame or as another type of connection carrier.
  • PCB printed circuit board
  • an electronic chip For example, an electronic chip, a
  • Optoelectronic chip a light-emitting diode, a laser chip, a photodetector chip or a wafer or comprise a plurality of such chips.
  • the second component and / or the first component comprises a light-emitting LED, in short LED.
  • the second component comprises the
  • the component comprising a light emitting LED is preferably adapted to emit blue light or white light.
  • light-emitting LED component also other colors, such as red, orange or radiation from the IR range, emit.
  • the light-emitting light-emitting diode comprises at least one optoelectronic semiconductor chip.
  • the optoelectronic semiconductor chip may have a semiconductor layer sequence.
  • the semiconductor layer sequence of the semiconductor chip is preferably based on a III-V compound semiconductor material. There are, for example, compounds from the elements
  • An active region semiconductor layer sequence may be based, for example, on nitride compound semiconductor materials. "On nitride compound semiconductor material
  • the semiconductor layer sequence or at least a part thereof comprises or consists of a nitride compound semiconductor material, preferably Al n Ga m Ini_ r m N, where 0 ⁇ n ⁇ 1, O ⁇ m ⁇ 1 and n + m ⁇ 1.
  • This material does not necessarily have to have a mathematically exact composition according to the above formula, but rather it may have, for example, one or more dopants and additional constituents, but for the sake of simplicity the above formula contains only the essential components of the crystal lattice (Al, Ga, In, N), even if these can be partially replaced and / or supplemented by small amounts of other substances.
  • the semiconductor layer sequence includes an active layer with at least one pn junction and / or with one or more quantum well structures. In the operation of the LED or the semiconductor chip becomes in the active layer a
  • a wavelength or a wavelength maximum of the radiation is preferably in the ultraviolet and / or visible and / or infrared
  • Spectral range in particular at wavelengths between 420 and 800 nm inclusive, for example between
  • the first component differs from the second component in terms of its composition.
  • the first and second components have a different thermal
  • Component two components at least in terms of their thermal expansion coefficient from each other
  • the second component has a second thermal expansion coefficient 2.
  • the first thermal expansion coefficient a1 is the second one
  • the component has a connection element.
  • the connecting element is arranged between the first component and the second component. In other words, that connects
  • the connecting element may be a mechanical connection of the first component and the second component.
  • an electrical connection between the first component and the second component can also be made via the connecting element.
  • Connecting element has a connection layer or has a plurality of connection layers.
  • the connecting element comprises at least one phase or consists thereof.
  • the connecting element comprises at least two phases, a first phase and a second one
  • the connecting element consists of the first phase and the second phase.
  • the connecting element can also have more than two phases, for example three, four or five phases.
  • the connecting element may also have a plurality of first phases and / or a plurality of second phases.
  • the plurality of first phases are spatially separated from each other.
  • two first phases may be spatially separated by a second phase.
  • the at least first phase and / or the at least second phase differ at least in their chemical composition. Is that for example
  • the lower phases are not uniform
  • Composition differs from grain to grain. It thus forms a lower phase within the first and / or second phase, which does not have a layer with a homogeneous layer thickness.
  • phase is meant here a portion of the connector in which similar or equal physical
  • the at least first phase and / or the at least second phase or further other phases comprise a different type of metals.
  • At least three or at least five metals At least one metal is silver.
  • the connecting element has, in addition to silver, four further metals.
  • the four other metals are a first metal, a second metal, a third metal and a fourth metal.
  • the first metal may be selected from a group comprising nickel, platinum and palladium.
  • the first metal is nickel.
  • the second metal can be indium.
  • the third Metal can be tin.
  • the fourth metal can be gold.
  • Silver in the first phase at most 12% by weight.
  • the proportion of silver in the second phase is at most 7% by weight. According to at least one embodiment, the proportion of
  • Silver in the first phase at most 5% by weight.
  • the proportion of silver in the second phase is at most 2% by weight.
  • the concentration of the first metal, in particular nickel, in the first phase is between 10 and 35% by weight, preferably between 28 and 32% by weight.
  • the concentration of the first metal in the second phase is less than 5% by weight or 10% by weight.
  • the concentration of the second metal, in particular indium, in the first phase is between 5% by weight and 35% by weight or 30% by weight, in particular between 25% by weight and 35% by weight inclusive.
  • the concentration of second metal in the second phase is between 30 and 50% by weight inclusive.
  • the concentration of the third metal, in particular tin, in the first phase is between 15% by weight and 20% by weight and
  • the concentration of the third metal in the second phase is less than 5% by weight.
  • the concentration of the fourth metal, in particular gold, in the first phase is between 5% by weight and 15% by weight inclusive, preferably between 8% by weight and 12% by weight inclusive.
  • the concentration of the fourth metal in the second phase is between 20% by weight and 50% by weight inclusive.
  • the first and / or second phase is a quintary system.
  • the first and / or the second phase consist of five metals.
  • the concentrations of the first metal in the first phase may be correlated with the concentrations of the second metal in the first phase and with the concentrations of the third metal in the first phase and with the concentrations of the fourth metal in the first phase and with the second metal
  • Concentrations of the silver, that is, the fifth metal, are arbitrarily combined in the first phase.
  • the concentrations of the first metal in the second phase, the second metal in the second phase, the third metal in the second phase, the fourth metal in the second phase and the silver in the second phase may be combined as desired.
  • the first phase may have a composition Mel x y Me2 Me3 Me4 z r s Me5 with 0.10 ⁇ x ⁇ 0.35; 0.05 ⁇ y ⁇ 0.35; 0.15 ⁇ z ⁇ 0.50; 0.05 -S r ⁇ 0.15 and s -S 0.12, for example
  • the second phase can be a composition
  • the first phase and / or the second phase are each formed as a layer.
  • the layer may in particular have a layer thickness of 30 nm to 10,000 nm, for example 100 nm to 2000 nm.
  • the first phase and the second phase are in the form of a layer system, in particular in FIG.
  • the second phase in particular comprises or consists of silver and at least two further metals which are also present in the first phase.
  • Phases are each formed as a layer.
  • the second phase is between the first two phases, in particular in direct mechanical and / or electrical contact,
  • the proportion of silver in the first phase is in particular greater than or equal to the proportion of silver in the respective second phase.
  • the corresponding metals form in the
  • the connecting element forms in particular a soldering system. In accordance with at least one embodiment, this is
  • the first metal, the second metal, the third metal, and the fourth metal and silver are adapted to be in a
  • Concentration composition of the corresponding metals The concentrations of the metals in the corresponding phase can be determined by means of EDX (English: Energy Dispersive X-Ray
  • the first metal has a melting point> 1400 ° C.
  • the second metal has a melting point of less than 180 ° C.
  • the third metal has a melting point of ⁇ 250 ° C.
  • the fourth Metal has a melting point of ⁇ 1100 ° C.
  • the fifth metal in particular silver, has a melting point of ⁇ 1000 ° C.
  • at least the second and third metals form a eutectic mixture in one
  • Metal used For example, indium having a melting temperature of 156 ° C may be used as the second metal.
  • tin having a melting point of 231 ° C may be used as the third metal.
  • Metal used for example, silver having a melting point of 961.78 ° C may be used as the fifth metal.
  • the second and third metals form a eutectic mixture having a melting temperature between 115 ° C and 118 ° C. If, for example, indium and tin are chosen as the second and third metals, indium with a proportion of 52 atom% and tin with a proportion of 48 atom% have a eutectic at a melting temperature of 117.5 ° C. +/- 0.5 ° C. on.
  • the combination of the second metal with the third metal with a low melting point shows the advantage that the connecting element at low
  • Processing temperatures is generated and thus a composite of at least two components with different thermal expansion coefficients at low
  • Processing temperatures can be generated.
  • the fourth metal such as gold
  • the fourth metal can be incorporated into the atomic lattices of the first and / or second phase.
  • Gold can prevent the oxidation of the metal layers of the first, second, third and / or fifth metal.
  • the surface of the first phase layer and / or the second phase layer is wave-shaped.
  • the surface of the first phase layer and / or the second phase layer is wave-shaped.
  • Phase layers wavy shaped.
  • the surface of the respective phase layer is not planar, but the phase layers dovetail with each other
  • the wave-shaped configuration can in particular by grains
  • the inventor has recognized that by using a first phase of the connecting element according to the invention, connecting the first and second components, for example the bonding of wafers with greatly different ones
  • the connecting element according to the invention has a thermo-mechanical stability, so that the component is also outstandingly suitable for subsequent processes and for the operation of the component.
  • the result is a connecting element, which is formed at similarly low temperatures, but only after bonding has a higher temperature stability for subsequent processes.
  • the connecting element is to set up to fix at low temperatures and already form a temperature-stable connection at this point.
  • Temperature step is not absolutely necessary to obtain a thermomechanically stable layer sequence.
  • the metals indium and tin and their reaction with silver, gold and nickel are used in this connecting element.
  • the metals react in the temperature range of the
  • the final layer stack consists of intermetallic compound layers, which are in
  • Subareas may have different compositions. Dodge to expensive substrates with adapted thermal expansion behavior is therefore avoided, since the connecting element proposed here, the joining of
  • bimetallic effect is limited to a value sufficiently low for semiconductor production.
  • the components in the device may also lose their functionality or break during manufacture. This results in high yield losses.
  • the process for producing the Component preferably manufactures the device. That is, all features disclosed for the method are also disclosed for the device and vice versa.
  • the method comprises the steps:
  • Metal applying at least one layer of a second metal, applying at least one layer of a third metal, applying at least one layer of a fourth metal and applying at least one layer of a fifth metal, in particular silver, to the first and / or second component.
  • the metals are in particular different from each other.
  • step B) heating the arrangement produced under step B) to a maximum of 200 ° C or 180 ° C to form a
  • Connecting element comprising at least a first phase comprising at least silver and four other metals, wherein the first and second components are joined together and together with the connecting element a
  • thermodynamically and mechanically or thermomechanically stable arrangement
  • steps A) to C) need not follow one another directly. There are further process steps between steps A) to C) possible.
  • thermomechanically stable is here and below
  • the first and / or second phases have a melting temperature that is different from the
  • the first and / or second phase does not exist, since they are first formed there.
  • the re-melting temperature of the first and / or second phase after step C) is greater than the joining temperature.
  • the method is free from a further heating step, which is described, for example, as
  • Step D) can be designated and after step C) takes place, in which the arrangement produced under step C) is heated to a temperature between 200 ° C and 400 ° C.
  • Temperature steps in particular temperature steps at temperatures of> 200 ° C, are not required to allow the connecting element to react completely.
  • the method allows the connection of a first and a second component by a connecting element, wherein the two components in particular have a different thermal expansion coefficient. This allows the use of less expensive materials for the first and / or second component to form a
  • thermally and electrically highly conductive and cost-saving materials such as silicon wafers can be joined or bonded to a sapphire wafer.
  • Figures 1A and 1B are each a schematic side view of a device according to an embodiment
  • Figure IC is a detailed view of Figure 1B
  • Figures 2A to 5B each show a method of manufacturing a device and the device according to a
  • FIGS. 6A and 6B each show two DSC curves of one
  • Embodiment and a comparative example Embodiment and a comparative example.
  • identical, identical or identically acting elements can each be provided with the same reference numerals.
  • the illustrated elements and their proportions with each other are not to be regarded as true to scale. Rather, individual elements, such as layers, components, components and areas for exaggerated representability and / or better understanding can be displayed exaggerated.
  • FIG. 1A shows a schematic side view of a component 100 according to an embodiment.
  • the component 100 has a first component 1 and a second component 2. Between the first component 1 and the second
  • the connecting element 3 has, in particular, five metals, one metal of which is silver.
  • the metals are
  • the other metals are nickel, indium, tin and gold. This can be a thermomechanical stable
  • the first component 1 and the second component 2 are, for example, selected from a group comprising: sapphire, a ceramic material, a semiconductor material, and a metal.
  • the first component and the second component can be selected such that they have a different coefficient of thermal expansion.
  • the thermal differs Coefficient of expansion at least by a factor of 1.5, for example by a factor of 3 or higher.
  • the connecting element 3 is arranged between the first component 1 and the second component 2.
  • Connecting element 3 is arranged in direct contact with the first component 1 and the second component 2.
  • FIG. 1B shows a schematic side view of a component 100 according to an embodiment.
  • the device 100 of FIG. 1B differs from the device 100 of FIG. 1A in that the connection element 3 is formed from two phases 31 and 32.
  • the first phase 31 consists of or comprises the following metals with the concentrations:
  • the second phase 32 may consist of or comprise silver and at least two other metals, which may be selected from the following metals and their concentrations:
  • the connecting element 3 has two phases 31, 32, wherein the first phase 31 may have all five metals and the second phase 32 besides silver has at least two metals, which may also be present in the first phase 31.
  • the first phase 31 and / or the second phase 32 are each formed as a layer.
  • the interfaces between adjacent layers of the first and / or second phases 31, 32 may be planar.
  • the interfaces between the first phase 31 and the second phase 32 may not be planar, but may have a wave-like shape.
  • the first phase 31 can be interlocked with the second phase 32. This can be caused by the individual growth of the grains in the respective layer.
  • the connecting element 3 is arranged in direct mechanical and / or electrical contact with the respective components 1, 2.
  • the second phase 32 is in direct mechanical and / or electrical contact with the second component 2 and the first phase 31 in direct and / or electrical contact with the first component 1
  • FIGS. 2A and 2B each show a component 100 according to one embodiment and its manufacture.
  • the device 100 of Figure 2A shows a device 100, as before
  • FIG. 2B shows the finished one
  • FIG. 2A shows a first component 1 and a second one
  • the first component 1 may be, for example, a sapphire substrate.
  • the second component 2 can be, for example, a light-emitting light-emitting diode.
  • Process step C that is to say after heating the arrangement produced in step B) to a maximum of 200 ° C., can take place
  • Connecting element 3 are generated, which has at least a first phase 31 and optionally a second phase 32.
  • At least the first phase 31 has up to five metals, including silver.
  • the second phase 32 comprises silver and at least two further metals, which may also be present in the first phase 31.
  • indium and gold are the other two metals in the second phase 32.
  • a connecting element 3 can be generated which is thermodynamically and mechanically stable and connects the first and second components 1, 2 with each other.
  • FIGS. 3A and 3B each show a component 100 according to an embodiment and its manufacture.
  • the component 100 of FIG. 3A shows the structure before the influence of the temperature before the method step C), and the component 100 of FIG. 3B shows a component after the method step C).
  • the device 100 of Figure 3A differs from that
  • the layer of the fifth metal Me5 and the layer Me4 are interchanged from the fourth metal.
  • the layer of the fifth metal Me5 directly adjoins the layer of the third metal Me3 and the layer of the fourth metal Me4 disposed between the second component 2 and the layer of the fifth metal Me5.
  • a layer of the first metal Mel may be arranged between the layer of the fourth metal Me4 and the second component 2, a layer of the first metal Mel may be arranged.
  • the device 100 of FIG. 3B differs from the device 100 of FIG. 2B in that it has three phases 31, 32.
  • the connecting element 3 has at least two first phases 31 and a second phase 32, which is arranged between the two first phases 31 and thus separates the two first phases 31 from each other.
  • the first two phases 31 have the same
  • composition wherein the composition of the first two phases 31 of the composition of the second
  • the first phases 31 have at least the first metal Mel, in particular nickel, the second metal Me2, in particular indium, the third metal Me3, in particular tin, and the fourth metal Me4,
  • the second phase 32 has in particular gold as the fourth metal Me4 and indium as the second metal Me2 and optionally silver as the fifth metal Me5.
  • FIGS. 4A and 4B show a schematic side view of a component 100 and its manufacture. In this embodiment, the first component 1 is replaced by a
  • Carrier wafer 1 shaped.
  • the carrier wafer 1 is provided with a
  • the first metal Mel is in particular platinum, nickel or palladium and has a layer thickness of 650 nm.
  • the layer of mel can be applied by means of cathode sputtering.
  • Layer of Mel are at least two second components 2 downstream. Between the at least two downstream components 2 are each a layer of a second metal Me2, a layer of a third metal Me3, a layer of a fourth metal Me4 and a layer of a fifth metal Me5 arranged ( Figure 4A).
  • the device 100 illustrated in FIG. 4A has a first common component 1 and at least two second ones
  • Connecting element 3 which has a first phase 31 and
  • thermo-mechanically stable connection element 3 can be generated.
  • Figures 5A and 5B show the manufacture of a
  • FIG. 5A shows that a first component 1, which has a
  • a semiconductor layer sequence and a sapphire substrate can be provided. Furthermore, a second component 2 can be provided. Subsequently, on the first component 1, a layer of a first metal Mel, then a layer of a second metal Me2 and then a layer of a third metal Me3 are applied. On the second component 2, a layer of a fourth metal Me4 and a layer of a fifth metal Me5 can be applied. Subsequently, the connection of the two components 1, 2, so that the layer of the third metal Me3 and the layer of the fifth metal Me5 in direct contact with each other
  • a connecting element 3 is formed, which has a first phase 31, a second phase 32 and a further first phase 31.
  • a layer of a first metal Mel may be applied between the layer of the fourth metal Me4 and the second component 2 (not shown here).
  • a sapphire substrate e.g.
  • Quarzglasbisulf be connected or bonded together as a second component 2. Because of the strong
  • Connecting element 3 can therefore be applied to the first component 1, such as a sapphire disk, for example a 300 nm thick layer of the first metal Mel, preferably nickel, and a 300 nm thick layer of a second metal Me2, preferably indium, followed by a 450 nm thick Layer of a third metal Me3, preferably tin, are applied.
  • the second component which is in particular a quartz glass carrier disk, a 50 nm thick layer of a first metal Mel, preferably nickel, followed by a 40 nm thick layer of a fourth metal Me4, preferably gold, and a 100 nm thick layer of a fifth metal Me5, preferably silver.
  • the bonding of the components 1, 2 takes place in particular at temperatures ⁇ 200 ° C, for example at 165 ° C, and
  • the disks can first be placed on top of each other and in this state with a heating rate,
  • the disk composite formed here has a sufficiently low bimetallic effect, so that a
  • connecting element 3 formed here is sufficiently stable for mechanical and thermal
  • FIG. 6A shows a DSC curve (DSC, Differential Scanning Calorimetry) of a connecting element 3 according to FIG. 6
  • FIG. 6B shows a DSC curve of a connecting element 3 of a comparative example. It is the heating rate Q in W / g depending on the
  • Heating curve 6-1 and the cooling curve 6-2 are measured.
  • the connecting element 3 of Figure 6A differs from the connecting element 3 of Figure 6B in that the Connecting element 3 of Figure 6A next to the first metal Mel, the second metal Me2, the third metal Me3, the fourth metal Me4 has a fifth metal Me5.
  • the connecting element 3 of FIG. 6A has as its first metal Mel nickel, as the second metal Me2 indium, as the third metal Me3 tin, as the fourth metal Me4 gold and as the fifth metal Me5 silver.
  • the comparative example of Figure 6B comprises nickel, indium, tin and optionally gold. It can be seen from the heating-up curve of FIG. 6A that there is no after-reaction 6-3 at high temperatures, in particular at 400 ° C., compared to the heating-up curve of FIG. 6B.
  • the inventive shows
  • thermomechanical stability Connecting element 3 already at low temperatures a thermomechanical stability.

Abstract

L'invention concerne un élément (100) comprenant un premier constituant (1), un second constituant (2), un élément de liaison (3) interposé entre le premier constituant (1) et le second constituant (2). L'élément de liaison (3) comprend au moins une première phase (31). La première phase (31) contient de l'argent (Me5) et au moins quatre autres métaux (Me1, Me2, Me3, Me4). Les métaux sont différents les uns des autres et sont appropriés pour réagir à une température de traitement inférieure à 200°C de façon à produire un élément de liaison (3) thermo-mécaniquement stable. L'élément de liaison (3) peut également contenir une seconde phase (32) formée avec la première phase (31) en tant que système de couches. La seconde phase (32) contient de l'argent et au moins deux autres métaux également présents dans la première phase (31). La proportion (c15) d'argent dans la première phase (31) est supérieure à la proportion (c25) d'argent dans la seconde phase (32) respective. Me1 peut être le nickel, le platine ou le palladium, Me2 peut être l'indium, Me3 peut être l'étain et Me4 peut être l'or. Le second constituant (2) peut comporter une diode luminescente (en abrégé LED). Dans le procédé de production de l'élément (100), des couches de métaux (Me1-ME5) sont appliquées sur le premier et/ou second constituant (1, 2) et chauffées à un maximum de 200°C pour former l'élément de liaison (3).
PCT/EP2016/078879 2015-11-30 2016-11-25 Élément comportant une couche de liaison quintuple contenant de l'argent, et procédé de production WO2017093142A1 (fr)

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