WO2017093142A1

WO2017093142A1 - Component with a silver-containing quinary connection layer and method for producing same

Info

Publication number: WO2017093142A1
Application number: PCT/EP2016/078879
Authority: WO
Inventors: Mathias Wendt
Original assignee: Osram Opto Semiconductors Gmbh
Priority date: 2015-11-30
Filing date: 2016-11-25
Publication date: 2017-06-08
Also published as: DE102015120773A1

Abstract

The invention relates to a component (100) which has a first component (1), a second component (2), and a connection element (3) which is arranged between the first component (1) and the second component (2). The connection element (3) has at least one first phase (31) which has silver (Me5) and at least four additional metals (Me1, Me2, Me3, Me4). The metals differ from one another and are suitable for reacting at a machining temperature of less than 200 °C such that a thermomechanically stable connection element (3) is produced. The connection element (3) can also have a second phase (32) which is formed as a layer system together with the first phase (31), the second phase (32) has silver and at least two additional metals that are also present in the first phase (31). The content (c15) of silver in the first phase (31) is greater than the content (c25) of silver in the second phase (32). Me1 can be nickel, platinum, or palladium; Me2 can be indium; Me3 can be tin; and Me4 can be gold. The second component (2) can comprise a light-emitting diode (LED for short). In the method for producing the component (100), layers of the metals (Me1-Me5) are applied onto the first and/or second component (1, 2) and heated maximally to 200 °C in order to form the connection element (3).

Description

description

CONSTRUCTION ELEMENT WITH A SILVER-CONTAINING QUINTAR COMPOUND LAYER AND METHOD FOR THE PRODUCTION THEREOF

The invention relates to a component. Furthermore, the invention relates to a method for producing a component.

The joining or bonding of at least two components, in particular with the aid of a solder metal layer, represents a challenge, in particular if both components have a very different coefficient of expansion. Components with very different

Expansion coefficients produce when cooling from the

Bonding temperature in the composite a strong deflection,

especially when using high joining temperatures, which can lead to problems in the production and breakage of the components as well as to the loss of the functionality of the components. To solve this problem, two approaches have usually been followed. First, components, such as substrates, with similar thermal

Expansive behavior used so that the

Component composite after the joining process only slightly curved despite a high fixing temperature. On the other hand one tries to fix the temperature by using

lower melting metals, such as indium or indium-gold and their isothermal solidification temperatures at mild temperatures. However, the reduction in deflection is not sufficient in many practical cases.

In addition, in a Auln system, the formation of a brittle AuIn ₂ ^~ phase can often be insufficiently suppressed. Bonding layers so produced often have a low fracture toughness and behave brittle, which is the component can negatively influence and loss of

Functionality of the components can lead.

An object of the invention is a component

to provide that is stable and / or easy to produce. It is another object of the invention to provide a method for

To provide a component that is easy and / or inexpensive to carry out. The tasks are performed by a device according to the

independent claim 1 solved. advantageous

Embodiments and developments of the invention are

Subject of the dependent claims. Furthermore, these objects are achieved by a method for producing a

Component solved according to independent claim 14.

Advantageous embodiments and further developments of

Method are the subject of dependent claim 15.

In at least one embodiment, the device includes a first component, a second component, and a

Connecting element on. The connecting element is between the first component and the second component,

preferably in direct mechanical and / or electrical contact with the first and second components. The connecting element has at least one first phase or consists thereof. The first phase comprises or consists of silver and at least four other metals. The metals are different from each other. The metals are capable of reacting at a processing temperature of 200 ° C, so that a thermo-mechanically stable connecting element is or is generated. In particular, "reacting" means that the metals react chemically, in particular a metal alloy

(Lotsystem), form. "Thermomechanically stable" means here and below that the connecting element at a processing temperature of <200 ° C is both mechanically and thermally stable and does not change its composition. In accordance with at least one embodiment, the component has a first component and / or a second component. The first component and / or the second component may be selected from a different number of materials and elements. For example, the first and / or second components may each be selected from a group including sapphire, silicon nitride, a semiconductor material

ceramic material, a metal and / or glass.

For example, one of the two components may be a semiconductor or ceramic wafer, for example, a shaped material of sapphire, silicon, germanium, silicon nitride, alumina, a luminescent ceramic such as YAG. Furthermore, it is possible that at least one component is formed as a printed circuit board (PCB), as a metallic lead frame or as another type of connection carrier. Furthermore, at least one of the components,

For example, an electronic chip, a

Optoelectronic chip, a light-emitting diode, a laser chip, a photodetector chip or a wafer or comprise a plurality of such chips.

In particular, the second component and / or the first component comprises a light-emitting LED, in short LED. In particular, the second component comprises the

light emitting LED and the first component of at least one of the above materials. The component comprising a light emitting LED is preferably adapted to emit blue light or white light. Alternatively, the one

light-emitting LED component also other colors, such as red, orange or radiation from the IR range, emit.

The light-emitting light-emitting diode comprises at least one optoelectronic semiconductor chip. The optoelectronic semiconductor chip may have a semiconductor layer sequence. The semiconductor layer sequence of the semiconductor chip is preferably based on a III-V compound semiconductor material. There are, for example, compounds from the elements

used, which consists of indium, gallium, aluminum, nitrogen, phosphorus, arsenic, oxygen, silicon, carbon and

Combination of this can be chosen. However, other elements and additions may be used. The

An active region semiconductor layer sequence may be based, for example, on nitride compound semiconductor materials. "On nitride compound semiconductor material

in the present context means that the semiconductor layer sequence or at least a part thereof comprises or consists of a nitride compound semiconductor material, preferably Al _n Ga _m Ini_ _r _m N, where 0 ^ n <1, O ^ m <1 and n + m <1. This material does not necessarily have to have a mathematically exact composition according to the above formula, but rather it may have, for example, one or more dopants and additional constituents, but for the sake of simplicity the above formula contains only the essential components of the crystal lattice (Al, Ga, In, N), even if these can be partially replaced and / or supplemented by small amounts of other substances. The semiconductor layer sequence includes an active layer with at least one pn junction and / or with one or more quantum well structures. In the operation of the LED or the semiconductor chip becomes in the active layer a

generates electromagnetic radiation. A wavelength or a wavelength maximum of the radiation is preferably in the ultraviolet and / or visible and / or infrared

Spectral range, in particular at wavelengths between 420 and 800 nm inclusive, for example between

including 440 and 480 nm.

In accordance with at least one embodiment, the first component differs from the second component in terms of its composition. For example, the first and second components have a different thermal

Expansion coefficients on. In other words, that indicates

Component two components, at least in terms of their thermal expansion coefficient from each other

distinguish. According to at least one embodiment, the first

Component to a first coefficient of thermal expansion l. The second component has a second thermal expansion coefficient 2. In particular, the first thermal expansion coefficient a1 is the second one

thermal expansion coefficient a2 different.

In particular, both thermal differ

Expansion coefficients by at least the factor 3, 2, 1 or 1.5. Alternatively, al = a2. In accordance with at least one embodiment, the component has a connection element. The connecting element is arranged between the first component and the second component. In other words, that connects

Connecting element, the first and the second component with each other. For example, the connecting element may be a mechanical connection of the first component and the second component. Furthermore, an electrical connection between the first component and the second component can also be made via the connecting element. In particular, that is

Connecting element in direct mechanical and / or

arranged electrical contact to the first component and the second component. In accordance with at least one embodiment, this is

Connecting element has a connection layer or has a plurality of connection layers.

The connecting element comprises at least one phase or consists thereof. In particular, the connecting element comprises at least two phases, a first phase and a second one

Phase. In particular, the connecting element consists of the first phase and the second phase. However, the connecting element can also have more than two phases, for example three, four or five phases. The connecting element may also have a plurality of first phases and / or a plurality of second phases. In particular, the plurality of first phases are spatially separated from each other. For example, two first phases may be spatially separated by a second phase. The at least first phase and / or the at least second phase differ at least in their chemical composition. Is that for example

Connecting element of three phases, so can two identical first phases and a second phase are present, which separates the two identical first phases from each other and has a different chemical composition. The respective phases can also form subphases.

In particular, the lower phases are not uniform

Layer off. In particular, each phase is made

different grains whose composition is in the specified range. However, the

Composition differs from grain to grain. It thus forms a lower phase within the first and / or second phase, which does not have a layer with a homogeneous layer thickness. By "phase" is meant here a portion of the connector in which similar or equal physical

Properties, such as the melting point, are present. In accordance with at least one embodiment, the at least first phase and / or the at least second phase or further other phases comprise a different type of metals. In particular, the first and / or second phase

at least three or at least five metals. At least one metal is silver.

In accordance with at least one embodiment of the component, the connecting element has, in addition to silver, four further metals. The four other metals are a first metal, a second metal, a third metal and a fourth metal. The first metal may be selected from a group comprising nickel, platinum and palladium. Preferably, the first metal is nickel. The second metal can be indium. The third Metal can be tin. The fourth metal can be gold.

In particular, the shares of the

corresponding metals within the respective phases. According to at least one embodiment, the proportion of

Silver in the first phase at most 12% by weight. Alternatively or additionally, the proportion of silver in the second phase is at most 7% by weight. According to at least one embodiment, the proportion of

Silver in the first phase at most 5% by weight. Alternatively or additionally, the proportion of silver in the second phase is at most 2% by weight. In accordance with at least one embodiment, the concentration of the first metal, in particular nickel, in the first phase is between 10 and 35% by weight, preferably between 28 and 32% by weight. Alternatively or additionally, the concentration of the first metal in the second phase is less than 5% by weight or 10% by weight.

In accordance with at least one embodiment, the concentration of the second metal, in particular indium, in the first phase is between 5% by weight and 35% by weight or 30% by weight, in particular between 25% by weight and 35% by weight inclusive. Alternatively or additionally, the concentration of second metal in the second phase is between 30 and 50% by weight inclusive.

In accordance with at least one embodiment, the concentration of the third metal, in particular tin, in the first phase is between 15% by weight and 20% by weight and

including 50% by weight, preferably between 16% by weight and 26% by weight inclusive. Alternatively or In addition, the concentration of the third metal in the second phase is less than 5% by weight.

In accordance with at least one embodiment, the concentration of the fourth metal, in particular gold, in the first phase is between 5% by weight and 15% by weight inclusive, preferably between 8% by weight and 12% by weight inclusive. Alternatively or additionally, the concentration of the fourth metal in the second phase is between 20% by weight and 50% by weight inclusive.

In accordance with at least one embodiment, the first and / or second phase is a quintary system. In other words

Then the first and / or the second phase consist of five metals.

The abovementioned proportions of the metals in the first and / or second phase can be combined as desired. In particular, the concentrations of the first metal in the first phase may be correlated with the concentrations of the second metal in the first phase and with the concentrations of the third metal in the first phase and with the concentrations of the fourth metal in the first phase and with the second metal

Concentrations of the silver, that is, the fifth metal, are arbitrarily combined in the first phase.

In particular, the concentrations of the first metal in the second phase, the second metal in the second phase, the third metal in the second phase, the fourth metal in the second phase and the silver in the second phase may be combined as desired.

The first phase may have a composition Mel _x _y Me2 Me3 Me4 _z _r _s Me5 with 0.10 <x <0.35; 0.05 <y <0.35; 0.15 <z <0.50; 0.05 -S r <0.15 and s -S 0.12, for example

Melo, 32Me2 ₀ , 3oMe3o, 2iMe4 ₀ , i ₂ Me5 ₀ , o ₅ .

The second phase can be a composition

Mel _a Me2 _b Me3 _c Me4 _d Me5 _e with a <0.10; 0.30 <b <0.50; c <0.10; 0.20 d ^ 0.50 and e -S 0.07, for example

Mel ₀ , o5Me2o, 49Me3o, o4Me4 ₀ , 4oMe5o, o2.

In accordance with at least one embodiment, the first phase and / or the second phase are each formed as a layer. The layer may in particular have a layer thickness of 30 nm to 10,000 nm, for example 100 nm to 2000 nm.

In accordance with at least one embodiment, the first phase and the second phase are in the form of a layer system, in particular in FIG

Side view as vertically stacked layers, formed. In particular, the layers are arranged in direct mechanical and / or electrical contact with each other. The second phase in particular comprises or consists of silver and at least two further metals which are also present in the first phase.

According to at least one embodiment, the

Connecting element two first phases and a second phase or consists of it. The first phases and the second

Phase are each formed as a layer. The second phase is between the first two phases, in particular in direct mechanical and / or electrical contact,

arranged. The proportion of silver in the first phase is in particular greater than or equal to the proportion of silver in the respective second phase. In particular, the corresponding metals form in the

corresponding phases an alloy. The connecting element forms in particular a soldering system. In accordance with at least one embodiment, this is

Connecting element free of cadmium, antimony, bismuth, lead and / or copper. In other words, that indicates

Connecting element no shares of cadmium, antimony, bismuth, lead and / or copper.

In accordance with at least one embodiment, the first metal, the second metal, the third metal, and the fourth metal and silver are adapted to be in a

Processing temperature of <200 ° C, in particular less than 180 ° C, to mix or react. This can

For example, be made by the second metal and the third metal at a processing temperature of

<200 ° C in the liquid state and react with a solid first metal and fourth metal and silver. This results in a first phase and / or a second phase, which is a different phase

Concentration composition of the corresponding metals. The concentrations of the metals in the corresponding phase can be determined by means of EDX (English: Energy Dispersive X-Ray

Spectroscopy) can be determined, which may have a maximum fault tolerance of 5%, in particular a maximum of 2%. In accordance with at least one embodiment, the first metal has a melting point> 1400 ° C. The second metal has a melting point of less than 180 ° C. The third metal has a melting point of <250 ° C. The fourth Metal has a melting point of <1100 ° C. The fifth metal, in particular silver, has a melting point of <1000 ° C. In particular, at least the second and third metals form a eutectic mixture in one

Melting point of less than 120 ° C, in particular less than 118 ° C.

For example, nickel having a melting point of

1455 ° C, platinum having a melting point of 1768 ° C and / or palladium with a melting point of 1555 ° C as the first

Metal used. For example, indium having a melting temperature of 156 ° C may be used as the second metal. For example, tin having a melting point of 231 ° C may be used as the third metal. For example, gold with a melting point of 1064 ° C as the fourth

Metal used. For example, silver having a melting point of 961.78 ° C may be used as the fifth metal. In particular, the second and third metals form a eutectic mixture having a melting temperature between 115 ° C and 118 ° C. If, for example, indium and tin are chosen as the second and third metals, indium with a proportion of 52 atom% and tin with a proportion of 48 atom% have a eutectic at a melting temperature of 117.5 ° C. +/- 0.5 ° C. on. The combination of the second metal with the third metal with a low melting point shows the advantage that the connecting element at low

Processing temperatures is generated and thus a composite of at least two components with different thermal expansion coefficients at low

Processing temperatures can be generated. In particular, the fourth metal, such as gold, can be incorporated into the atomic lattices of the first and / or second phase. Gold can prevent the oxidation of the metal layers of the first, second, third and / or fifth metal.

In accordance with at least one embodiment, the surface of the first phase layer and / or the second phase layer is wave-shaped. In particular, the

contiguous surfaces of the first and second

Phase layers wavy shaped. In other words, the surface of the respective phase layer is not planar, but the phase layers dovetail with each other

due to its undulating shape. The wave-shaped configuration can in particular by grains

different size can be generated.

The inventor has recognized that by using a first phase of the connecting element according to the invention, connecting the first and second components, for example the bonding of wafers with greatly different ones

Expansion coefficients at mild temperatures, can be made possible, so that these components after connection have a low deflection. In addition, that shows

The connecting element according to the invention has a thermo-mechanical stability, so that the component is also outstandingly suitable for subsequent processes and for the operation of the component. In particular, the temperature stability and the

Reflow temperature of the invention

Connector significantly increased by the use of silver. The result is a connecting element, which is formed at similarly low temperatures, but only after bonding has a higher temperature stability for subsequent processes. The connecting element is to set up to fix at low temperatures and already form a temperature-stable connection at this point. An abreaction in another

Temperature step is not absolutely necessary to obtain a thermomechanically stable layer sequence.

In particular, the metals indium and tin and their reaction with silver, gold and nickel are used in this connecting element. The metals react in the temperature range of the

Melting point of indium and form a sufficient temperature-stable for the production of particular thin-film LEDs connection. The final layer stack consists of intermetallic compound layers, which are in

Subareas may have different compositions. Dodge to expensive substrates with adapted thermal expansion behavior is therefore avoided, since the connecting element proposed here, the joining of

Components allowed at sufficiently mild temperatures.

Thus, the so-called bimetallic effect is limited to a value sufficiently low for semiconductor production.

Thermally and electrically well conductive and available at relatively low cost silicon wafers can thus with about their low thermal expansion with about

Sapphire disks with high thermal expansion are joined or joined, without it in the semiconductor production to yield losses due to disk breakage as well

Equipment problems or hordes entails and without a long-term product reliability must be put at risk.

For example, if two components with different thermal expansion coefficients are planarly fixed to one another at elevated temperature and then cooled, is due to the different contraction of the two components, such as wafers, a

Bend of the component. This effect is comparable to that of a bimetallic strip. This resulting mechanical stress results due to the different large thermal expansion coefficients of the first and second components. These also contribute to internal stress in the rest of the device. The bow of the device can adversely affect both manufacturing and device life.

For example, the components in the device may also lose their functionality or break during manufacture. This results in high yield losses. By connecting element according to the invention is the

Use of cost-effective components, such as substrates with low coefficients of thermal expansion, by the strong reduction in the processing temperature allows without adjusting too high deflection of the components. Thus, for example, a

Component of silicon, quartz glass or silicon nitride (having a low coefficient of thermal expansion Si: 2.6 • 10 ^"6 ^{K" 1,} quartz glass: 0.54 x 10 ^"6 K ^_1, Si3N4: 1.2 x ^{10" 6} K ^_1) with a component of sapphire (6.1 x 10 ^"6 K ^_1) or GaAs, which have a high thermal expansion coefficient, are connected in the device to one another without causing an appreciable deflection. the occurrence of the components of rupture is avoided or reduced by the use of a connecting element according to the invention.

It will continue a process for producing a

Component specified. The process for producing the Component preferably manufactures the device. That is, all features disclosed for the method are also disclosed for the device and vice versa.

In accordance with at least one embodiment, the method comprises the steps:

A) providing a first component and a second component,

B) applying at least one layer of a first

Metal, applying at least one layer of a second metal, applying at least one layer of a third metal, applying at least one layer of a fourth metal and applying at least one layer of a fifth metal, in particular silver, to the first and / or second component. The metals are in particular different from each other.

C) heating the arrangement produced under step B) to a maximum of 200 ° C or 180 ° C to form a

Connecting element comprising at least a first phase comprising at least silver and four other metals, wherein the first and second components are joined together and together with the connecting element a

form thermodynamically and mechanically or thermomechanically stable arrangement.

In accordance with at least one embodiment, this has with the

Method produced connecting element at least or exactly two phases, wherein one phase has at least silver and four other metals. Preferably, steps A) to C) need not follow one another directly. There are further process steps between steps A) to C) possible. With "thermodynamically and mechanically stable or with

thermomechanically stable "is here and below

understood that the first metal merges with the second

Metal, the third metal, the fourth metal and silver mixed as the fifth metal to the extent that the first and / or second phase does not continue to accumulate with the first metal and the first and / or second phase a solid

Have state of aggregation. In particular, then point

at least after step C), the first and / or second phases have a melting temperature that is different from the

The melting temperature or joining temperature of the first and / or second phase during step C). Before step C), in particular the first and / or second phase does not exist, since they are first formed there. In particular, the re-melting temperature of the first and / or second phase after step C) is greater than the joining temperature.

According to at least one embodiment forms the

Connecting element at least after step C) a fixed

Connection to the first component and the second

Component off.

In accordance with at least one embodiment, the method is free from a further heating step, which is described, for example, as

Step D) can be designated and after step C) takes place, in which the arrangement produced under step C) is heated to a temperature between 200 ° C and 400 ° C. In other words, the process of making a

Component only a temperature step, in particular the step C). That means more

Temperature steps, in particular temperature steps at temperatures of> 200 ° C, are not required to allow the connecting element to react completely.

The method allows the connection of a first and a second component by a connecting element, wherein the two components in particular have a different thermal expansion coefficient. This allows the use of less expensive materials for the first and / or second component to form a

Component. Thus, for example, thermally and electrically highly conductive and cost-saving materials, such as silicon wafers can be joined or bonded to a sapphire wafer.

Further advantages, advantageous embodiments and

Further developments emerge from the following in

Compound described with the figures

Embodiments.

Show it:

Figures 1A and 1B are each a schematic side view of a device according to an embodiment, Figure IC is a detailed view of Figure 1B, Figures 2A to 5B each show a method of manufacturing a device and the device according to a

Embodiment, and FIGS. 6A and 6B each show two DSC curves of one

Embodiment and a comparative example.

In the exemplary embodiments and figures, identical, identical or identically acting elements can each be provided with the same reference numerals. The illustrated elements and their proportions with each other are not to be regarded as true to scale. Rather, individual elements, such as layers, components, components and areas for exaggerated representability and / or better understanding can be displayed exaggerated.

FIG. 1A shows a schematic side view of a component 100 according to an embodiment. The component 100 has a first component 1 and a second component 2. Between the first component 1 and the second

Component 2, a connecting element 3 is arranged. The connecting element 3 has, in particular, five metals, one metal of which is silver. The metals are

different from each other and are suitable at one

Processing temperature of <200 ° C to respond.

Preferably, the other metals are nickel, indium, tin and gold. This can be a thermomechanical stable

Connecting element already be produced after a temperature step of less than 200 ° C.

The first component 1 and the second component 2 are, for example, selected from a group comprising: sapphire, a ceramic material, a semiconductor material, and a metal. In this case, the first component and the second component can be selected such that they have a different coefficient of thermal expansion.

In particular, the thermal differs Coefficient of expansion at least by a factor of 1.5, for example by a factor of 3 or higher.

The connecting element 3 is arranged between the first component 1 and the second component 2. The

Connecting element 3 is arranged in direct contact with the first component 1 and the second component 2.

FIG. 1B shows a schematic side view of a component 100 according to an embodiment. The device 100 of FIG. 1B differs from the device 100 of FIG. 1A in that the connection element 3 is formed from two phases 31 and 32. For example, the first phase 31 consists of or comprises the following metals with the concentrations:

First metal Mel 10 to 35% by weight,

second metal Me2 5 to 35% by weight,

third metal Me3 15 to 50% by weight

fourth metal Me4 5 to 15% by weight

Silver <12% by weight.

The second phase 32 may consist of or comprise silver and at least two other metals, which may be selected from the following metals and their concentrations:

First metal Mel <10% by weight,

second metal Me2 30 to 50% by weight,

third metal Me3 <10% by weight

fourth metal Me4 20 to 50% by weight,

Silver as the fifth metal Me5 <7% by weight. In other words, the connecting element 3 has two phases 31, 32, wherein the first phase 31 may have all five metals and the second phase 32 besides silver has at least two metals, which may also be present in the first phase 31.

In accordance with at least one embodiment, the first phase 31 and / or the second phase 32 are each formed as a layer. In particular, the two phases 31, 32

stacked . The interfaces between adjacent layers of the first and / or second phases 31, 32 may be planar. Alternatively, as shown in Figure 1C, the interfaces between the first phase 31 and the second phase 32 may not be planar, but may have a wave-like shape. As a result, the first phase 31 can be interlocked with the second phase 32. This can be caused by the individual growth of the grains in the respective layer. In particular, the connecting element 3 is arranged in direct mechanical and / or electrical contact with the respective components 1, 2. In this case, the second phase 32 is in direct mechanical and / or electrical contact with the second component 2 and the first phase 31 in direct and / or electrical contact with the first component 1

arranged.

FIGS. 2A and 2B each show a component 100 according to one embodiment and its manufacture. The device 100 of Figure 2A shows a device 100, as before

Influence of the temperature, so before the process step C), can be constructed. FIG. 2B shows the finished one

Component 100 after at least the method step C). FIG. 2A shows a first component 1 and a second one

Component 2. Between the first and second component 1, 2, a layer system of a first metal Mel, a second metal Me2, a third metal Me3, a fourth metal Me4 and a fifth metal Me5 is applied. The first component 1 may be, for example, a sapphire substrate. The second component 2 can be, for example, a light-emitting light-emitting diode. After done

Process step C), that is to say after heating the arrangement produced in step B) to a maximum of 200 ° C., can take place

Connecting element 3 are generated, which has at least a first phase 31 and optionally a second phase 32.

At least the first phase 31 has up to five metals, including silver. The second phase 32 comprises silver and at least two further metals, which may also be present in the first phase 31. Preferably, indium and gold are the other two metals in the second phase 32.

Thus, a connecting element 3 can be generated which is thermodynamically and mechanically stable and connects the first and second components 1, 2 with each other.

FIGS. 3A and 3B each show a component 100 according to an embodiment and its manufacture. The component 100 of FIG. 3A shows the structure before the influence of the temperature before the method step C), and the component 100 of FIG. 3B shows a component after the method step C). The device 100 of Figure 3A differs from that

Component of Figure 2A, characterized in that the layer of the fifth metal Me5 and the layer Me4 are interchanged from the fourth metal. In other words, the layer of the fifth metal Me5 directly adjoins the layer of the third metal Me3 and the layer of the fourth metal Me4 disposed between the second component 2 and the layer of the fifth metal Me5. Optionally, in the

3A, between the layer of the fourth metal Me4 and the second component 2, a layer of the first metal Mel may be arranged.

The device 100 of FIG. 3B differs from the device 100 of FIG. 2B in that it has three phases 31, 32. The connecting element 3 has at least two first phases 31 and a second phase 32, which is arranged between the two first phases 31 and thus separates the two first phases 31 from each other. In particular, the first two phases 31 have the same

Composition, wherein the composition of the first two phases 31 of the composition of the second

Phase 32 makes a difference. In particular, the first phases 31 have at least the first metal Mel, in particular nickel, the second metal Me2, in particular indium, the third metal Me3, in particular tin, and the fourth metal Me4,

especially gold, and the fifth metal Me5, in particular

Silver, up. The second phase 32 has in particular gold as the fourth metal Me4 and indium as the second metal Me2 and optionally silver as the fifth metal Me5. FIGS. 4A and 4B show a schematic side view of a component 100 and its manufacture. In this embodiment, the first component 1 is replaced by a

Carrier wafer 1 shaped. The carrier wafer 1 is provided with a

Layer of a first metal mel covered. The first metal Mel is in particular platinum, nickel or palladium and has a layer thickness of 650 nm. The layer of mel can be applied by means of cathode sputtering. On the

Layer of Mel are at least two second components 2 downstream. Between the at least two downstream components 2 are each a layer of a second metal Me2, a layer of a third metal Me3, a layer of a fourth metal Me4 and a layer of a fifth metal Me5 arranged (Figure 4A). In other words, the device 100 illustrated in FIG. 4A has a first common component 1 and at least two second ones

Components 2 on. Subsequently, the treatment of the arrangement of Figure 4A with a temperature of at most 200 ° C or 180 ° C according to the method step C). This forms a

Connecting element 3, which has a first phase 31 and

optionally has a second phase 32. The first phase 31 and optionally the second phase 32 each comprise or consist of the first metal Mel, the second metal Me2, the third metal Me3, the fourth metal Me4 and the fifth metal Me5 (FIG. 4B). Thus, a thermo-mechanically stable connection element 3 can be generated. One

subsequent heating step, for example at

Temperatures between 230 and 400 ° C, for Abreaktion of the connecting element 3 is not required. The result is an arrangement comprising a first component 1 and a second component 2, wherein in each case between the two components 1, 2, a connecting element 3 is arranged, which is thermodynamically and mechanically stable.

Figures 5A and 5B show the manufacture of a

Device 100 according to one embodiment. FIG. 5A shows that a first component 1, which has a

Semiconductor layer sequence and a sapphire substrate can be provided. Furthermore, a second component 2 can be provided. Subsequently, on the first component 1, a layer of a first metal Mel, then a layer of a second metal Me2 and then a layer of a third metal Me3 are applied. On the second component 2, a layer of a fourth metal Me4 and a layer of a fifth metal Me5 can be applied. Subsequently, the connection of the two components 1, 2, so that the layer of the third metal Me3 and the layer of the fifth metal Me5 in direct contact with each other

are arranged. Subsequently, a heating of the arrangement produced in Figure 5A to a maximum of 180 ° C or 200 ° C.

respectively. Thus, the first component 1 and the second component 2 can be connected to each other. A connecting element 3 is formed, which has a first phase 31, a second phase 32 and a further first phase 31.

In addition, a layer of a first metal Mel may be applied between the layer of the fourth metal Me4 and the second component 2 (not shown here). For example, a sapphire substrate (e.g.

structureless, 4 inches) as the first component 1 and a

Quarzglasträgerscheibe be connected or bonded together as a second component 2. Because of the strong

different thermal expansion coefficient but this is possible only at low temperatures. When

Connecting element 3 can therefore be applied to the first component 1, such as a sapphire disk, for example a 300 nm thick layer of the first metal Mel, preferably nickel, and a 300 nm thick layer of a second metal Me2, preferably indium, followed by a 450 nm thick Layer of a third metal Me3, preferably tin, are applied. On the second component, which is in particular a quartz glass carrier disk, a 50 nm thick layer of a first metal Mel, preferably nickel, followed by a 40 nm thick layer of a fourth metal Me4, preferably gold, and a 100 nm thick layer of a fifth metal Me5, preferably silver. The bonding of the components 1, 2 takes place in particular at temperatures <200 ° C, for example at 165 ° C, and

optionally under a uniaxial pressure, for example of 1 mPa. In the bonding method, the disks can first be placed on top of each other and in this state with a heating rate,

For example, be heated from 10 K / min from room temperature to the temperature used for bonding. It can only be applied the pressure and held for a certain time, for example for 600 s. Afterwards, the discs can be replaced with a cooling ramp,

for example, from 10 K / min, cooled to room temperature. The disk composite formed here has a sufficiently low bimetallic effect, so that a

automatic horde or plant assembly is possible.

Furthermore, the connecting element 3 formed here is sufficiently stable for mechanical and thermal

Follow-up processes. FIG. 6A shows a DSC curve (DSC, Differential Scanning Calorimetry) of a connecting element 3 according to FIG

Embodiment. FIG. 6B shows a DSC curve of a connecting element 3 of a comparative example. It is the heating rate Q in W / g depending on the

Temperature T in ° C shown. There were each the

Heating curve 6-1 and the cooling curve 6-2 are measured. The connecting element 3 of Figure 6A differs from the connecting element 3 of Figure 6B in that the Connecting element 3 of Figure 6A next to the first metal Mel, the second metal Me2, the third metal Me3, the fourth metal Me4 has a fifth metal Me5.

In particular, the connecting element 3 of FIG. 6A has as its first metal Mel nickel, as the second metal Me2 indium, as the third metal Me3 tin, as the fourth metal Me4 gold and as the fifth metal Me5 silver. The comparative example of Figure 6B comprises nickel, indium, tin and optionally gold. It can be seen from the heating-up curve of FIG. 6A that there is no after-reaction 6-3 at high temperatures, in particular at 400 ° C., compared to the heating-up curve of FIG. 6B. Thus, the inventive shows

Connecting element 3 already at low temperatures a thermomechanical stability.

The ones described in connection with the figures

Embodiments and their features can also be combined with each other according to further embodiments, even if such combinations are not explicitly shown in the figures. Furthermore, in conjunction with the

Figures embodiments described additional or alternative features as described in the general part. The invention is not by the description based on the

Embodiments limited to these. Rather, the invention includes each new feature and each new combination of features, which in particular any combination of

Contains features in the claims, even if this feature or combination itself is not explicitly stated in the claims or exemplary embodiments. This patent application claims the priority of German Patent Application 10 2015 120 773.7, the disclosure of which is hereby incorporated by reference.

Reference sign list

100 optoelectronic component

1 first component

2 second component

3 connecting element

31 first phase

32 second phase

312 wave-shaped interface

Mel layer of the first metal or first metal

Me2 layer of the second metal or second metal

Me3 layer of third metal or third metal

Me4 layer of the fourth metal or fourth metal

Me5 layer of the fifth metal or fifth metal

Claims

claims

1st component (100) having

a first component (1),

a second component (2),

a connecting element (3) which is arranged between the first component (1) and the second component (2), wherein the connecting element (3) has at least one first phase (31),

wherein the first phase (31) comprises silver (Me5) and at least four further metals (Mel, Me2, Me3, Me4),

wherein the metals are different from each other and are capable of reacting at a processing temperature of less than 200 ° C, so that a thermomechanically stable

Connecting element (3) is generated.

2. Component (100) according to claim 1,

wherein the proportion (cl5) of silver in the first phase (31) is at most 12% by weight.

3. Component (100) according to at least one of the preceding claims,

the four further metals being a first metal (Mel), a second metal (Me2), a third metal (Me3) and a fourth metal (Me4), the first metal (Mel) being selected from a group comprising nickel, Includes platinum and palladium,

wherein the second metal (Me2) is indium,

wherein the third metal (Me3) is tin, and

where the fourth metal (Me4) is gold.

4. Component (100) according to at least one of the preceding claims, wherein the connecting element (3) has a second phase (32) which is formed with the first phase (31) as a layer system, the second phase (32) comprising silver and at least two further metals which are also in the first phase (31 ) available.

5. Component (100) according to at least one of the preceding claims,

wherein the connecting element (3) has two first phases (31) and one second phase (32), each of which is formed as a layer, the second phase (32) being arranged between the two first phases (31), the proportion ( cl5) to silver in the first phase (31) larger than the

Part (c25) of silver in the respective second phase (32).

6. Component (100) according to at least one of the preceding claims,

wherein the connecting element (3) is free of cadmium, antimony, bismuth, lead and / or copper.

7. Component (100) according to at least one of the preceding claims,

wherein the concentration (eil) of the first metal (Mel) in the first phase (31) is between 10 and 35% by weight and / or the

Concentration (c21) of the first metal (Mel) in a second phase (32) is less than 10% by weight.

8. The component (100) according to at least one of the preceding claims,

wherein the concentration (cl2) of the second metal (Me2) in the first phase (31) is between 5 and 35% by weight and / or the Concentration (c22) of the second metal (Me2) in a second phase (32) is between 30 and 50% by weight.

9. Component (100) according to at least one of the preceding claims,

wherein the concentration (cl3) of the third metal (Me3) in the first phase (31) is between 15 and 50% by weight and / or the concentration (c23) of the third metal (Me3) in a second phase (32) is less than 5% by weight is.

10. The component (100) according to at least one of the preceding claims,

wherein the concentration (cl4) of the fourth metal (Me4) in the first phase (31) is between 5 and 15% by weight and / or the concentration (c24) of the fourth metal (Me4) in a second phase (32) is between 20% by weight and 50% by weight.

11. The component (100) according to at least one of the preceding claims,

wherein the second component (2) is a light-emitting

Light emitting diode, and wherein at least the first component (1) is selected from the group consisting of sapphire,

Silicon nitride, a semiconductor material, a ceramic material, a metal and glass.

12. The component (100) according to at least one of the preceding claims,

wherein the first metal (Mel) has a melting point greater

1400 ° C, the second metal (Me2) has a melting point of less than 180 ° C, the third metal (Me3) a

Melting point less than 250 ° C and the fourth metal (Me4) have a melting point less than 1100 ° C, wherein at least the second and the third metal (Me2, Me3) is a eutectic Form mixture at a melting point less than or equal to 120 ° C.

13. The component (100) according to at least one of the preceding claims,

wherein the first component (1) has a first thermal expansion coefficient (l) from the second component (2) comprising a second thermal expansion coefficient

Expansion coefficient (2) is different and the thermal expansion coefficients differ by at least a factor of 1.5 from each other.

14. A method of manufacturing a device (100) according to any one of claims 1 to 13, comprising the steps of:

A) providing a first component (1) and a second component (2),

B) applying at least one layer of a first metal (Mel), at least one layer of a second metal

(Me2), at least one layer of a third metal

(Me3), at least one layer of a fourth metal (Me4) and at least one layer of silver (Me5) on the first and / or second component (1, 2), wherein the metals

are different from each other,

C) heating the arrangement produced under step B) to a maximum of 200 ° C. to form a connecting element (3) comprising at least a first phase (31) comprising at least silver (Me5) and four further metals (Meli, Mel2, Mel3, Mel4) having,

wherein the first and second components (1, 2) are interconnected and together with the connecting element (3) form a thermodynamically and mechanically stable arrangement.

15. The method according to claim 14, the method being free of a further heating step, wherein the assembly produced under step C) is heated to a temperature between 200 ° C and 400 ° C.