WO2017092628A1 - Module de dissipation de chaleur pour module de transistor bipolaire à porte isolée et module de transistor bipolaire à porte isolée le comprenant - Google Patents

Module de dissipation de chaleur pour module de transistor bipolaire à porte isolée et module de transistor bipolaire à porte isolée le comprenant Download PDF

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Publication number
WO2017092628A1
WO2017092628A1 PCT/CN2016/107345 CN2016107345W WO2017092628A1 WO 2017092628 A1 WO2017092628 A1 WO 2017092628A1 CN 2016107345 W CN2016107345 W CN 2016107345W WO 2017092628 A1 WO2017092628 A1 WO 2017092628A1
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Prior art keywords
heat dissipation
columns
module according
layer
heat
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PCT/CN2016/107345
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English (en)
Chinese (zh)
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林信平
徐强
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比亚迪股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K7/00—Constructional details common to different types of electric apparatus
    • H05K7/20—Modifications to facilitate cooling, ventilating, or heating

Definitions

  • the present disclosure relates to the field of heat sink technologies, and in particular, to a heat dissipation module for an IGBT module and an IGBT module having the heat dissipation module for the IGBT module.
  • the heat sink with liquid as the cooling medium is compact and configured as a relatively thin plate-like or strip-shaped metal fin or needle structure, and the inside of the heat sink is arranged with a fluid passage, so that convective heat exchange is generated between the fluid and the water-cooled plate, thereby The fluid can dissipate the thermal power of high-power electronic components on the surface of the water-cooled plate.
  • the thickness of the upper and lower copper plates of the copper clad laminate is the same, but since the thermal expansion coefficient of copper is large, the copper clad laminate is prone to tilting at high temperatures, thereby affecting the arrangement of electrical components.
  • the present disclosure aims to solve at least one of the technical problems in the related art to some extent. To this end, the present disclosure proposes a heat dissipation module for an IGBT module, which can be prevented from lifting up to effectively support electrical components.
  • the present disclosure further proposes an IGBT module.
  • a heat dissipation module for an IGBT module includes: a heat sink bottom plate, the heat sink bottom plate includes: a bottom plate body and N heat dissipation columns, the bottom plate body includes a body portion and are respectively disposed on the body a first surface layer and a second surface layer on opposite surfaces of the portion, the body portion is made of aluminum silicon carbide, and the N heat dissipation columns are spaced apart on the first surface layer, and each of the heat dissipation columns One end is fixed to the first surface layer and the other end is a free end, and the first surface layer and the N heat dissipation columns are both adapted to be in contact with a cooling liquid;
  • the copper clad board includes a substrate and a first copper layer And a second copper layer, the first copper layer and the second copper layer are respectively disposed on opposite surfaces of the substrate, and the thickness of the first copper layer is smaller than that of the second copper layer The first copper layer is disposed on the second surface layer.
  • the heat dissipation module for an IGBT module by setting the thickness of the first copper layer to be smaller than the thickness of the second copper layer, the soldering of the chip can be facilitated, so that the copper clad laminate after soldering is relatively straight. Effectively prevent the copper clad plate from lifting upwards, thereby effectively improving the supporting effect of the copper clad laminate on the electrical components.
  • the package stability of the copper clad laminate and the IGBT chip can be improved, the operational reliability of the IGBT chip can be ensured, and the structural strength of the copper clad laminate can be improved. , thereby extending the service life of the copper clad laminate.
  • An IGBT module includes an IGBT chip and the above-described heat dissipation module for an IGBT module, and the IGBT chip is disposed on the second copper layer.
  • the support effect of the component can also improve the package stability of the copper clad laminate and the IGBT chip, ensure the operational reliability of the IGBT chip, improve the structural strength of the copper clad laminate, and thereby prolong the service life of the copper clad laminate.
  • FIG. 1 is a side view of a heat sink base plate in a heat dissipation module according to a first embodiment of the present disclosure
  • Figure 2 is an enlarged view of a region A in Figure 1;
  • FIG. 3 is a bottom view of a heat dissipation module in accordance with a first embodiment of the present disclosure
  • Figure 4 is an enlarged view of a region B in Figure 3;
  • Figure 5 is a cross-sectional view of the heat sink bottom plate placed in the cooling bath
  • Figure 6 is an enlarged view of a region C in Figure 5;
  • FIG. 7 is a side view of a heat dissipation module in accordance with a first embodiment of the present disclosure
  • Figure 8 is an enlarged view of a region D in Figure 7;
  • FIG. 9 is a schematic diagram of a heat dissipation module according to a first embodiment of the present disclosure.
  • FIG. 10 is a perspective view of a heat dissipation module according to a first embodiment of the present disclosure.
  • FIG. 11 is a bottom view of a heat dissipation module in accordance with a second embodiment of the present disclosure.
  • FIG. 12 is a top plan view of a heat dissipation module in accordance with a second embodiment of the present disclosure.
  • FIG. 13 is a side view of a heat dissipation module according to a second embodiment of the present disclosure.
  • Figure 14 is an enlarged view of a region E in Figure 13;
  • 16 is a table of maximum temperature values for an IGBT module in accordance with an embodiment of the present disclosure.
  • a bottom plate body 10 a bottom plate body 10; a first surface layer 11; a second surface layer 12; a body portion 13;
  • Heat sink 20 free end 21; fixed end 22; cooling slot 30;
  • Copper clad laminate 200 substrate 210; first copper layer 220; second copper layer 230.
  • An IGBT (Insulated Gate Bipolar Transistor) heat dissipation module 1000 according to an embodiment of the present disclosure will be described in detail below with reference to the accompanying drawings.
  • the heat dissipation module 1000 for an IGBT module includes a heat sink base plate 100 and a copper clad laminate 200.
  • the heat sink base plate 100 includes a bottom plate body 10 and N heat dissipation columns 20.
  • the base body 10 includes a body portion 13 and a first skin layer 11 and a second skin layer 12 respectively disposed on opposite surfaces of the body portion 13, that is, a first skin layer 11 and a second skin layer 12 are disposed on the body portion 13 and opposed to each other.
  • a copper clad laminate 200 is mounted on the second surface layer 12, and an electrical component (for example, an IGBT chip 2000) is mounted on the copper clad laminate 200.
  • the heat sink base plate 100 can have various options, for example, although the number of the heat dissipation posts 20 on the heat sink base plate 100 shown in FIG. 11 is significantly larger than that on the heat sink base plate 100 shown in FIG. The number of 20, but both heat sink bases 100 can be selected, that is, Figures 11 and 3 show two embodiments of the heat sink base 100, respectively.
  • the copper clad laminate 200 By arranging the copper clad laminate 200 between the heat sink base plate 100 and the electrical components, the copper clad laminate 200 can function as a supporting electrical component, and the copper clad laminate 200 and the electrical component can also be mutually connected and insulated from each other, thereby ensuring The operational safety of the electrical components and the heat sink base plate 100.
  • the second skin layer 12 may be an aluminum layer.
  • N heat dissipation columns 20 are spaced apart from each other on the first surface layer 11, and one end of each heat dissipation column 20 is fixed to the first surface layer 11, and the other end of each heat dissipation column 20 is a free end 21, and the first surface layer 11 and N
  • the heat sink 20 is adapted to be in contact with the coolant.
  • one end of the heat dissipation post 20 is configured as a fixed end 22, and the fixed end 22 of the heat dissipation post 20 can be fixedly connected to the first skin layer 11.
  • the cooling liquid can be in contact with the first surface layer 11 and can also be in contact with the exposed surface of each of the heat dissipation columns 20, and the heat generated by the electrical components disposed on the second surface layer 12 can pass through the copper clad laminate 200 and the second surface layer 12.
  • the body portion 13 is transferred to the first skin layer 11 and the N heat dissipation columns 20, so that the first skin layer 11 and the N heat dissipation columns 20 can further transfer the heat of the electrical components to the cooling liquid, thereby further generating heat of the power generation component.
  • the copper clad laminate 200 includes a substrate 210, a first copper layer 220, and a second copper layer 230.
  • the first copper layer 220 and the second copper layer 230 may be respectively disposed on the opposite sides of the substrate 210.
  • the first copper layer 220 is disposed on the lower surface of the substrate 210
  • the second copper layer 230 is disposed on the upper surface of the substrate 210
  • the thickness h1 of the first copper layer 220 may be smaller than the second copper layer 230.
  • the thickness h2 the first copper layer 220 is disposed on the second surface layer 12, and the second copper layer 220 is mounted with electrical components, that is, the thickness h2 of the second copper layer 230 on which the electrical component is mounted is greater than that of the electrical component not mounted.
  • the thickness of the first copper layer 220 is h1, that is, h2>h1.
  • the overall heat receiving capability of the copper clad laminate 200 can be improved, which facilitates soldering of the chip, so that the copper clad laminate 200 after soldering is relatively straight, effectively preventing The copper clad plate 200 is tilted up, thereby The support effect of the copper clad laminate 200 on the electrical components is effectively improved.
  • the package stability of the copper clad laminate 200 and the IGBT chip 2000 can be improved, the operational reliability of the IGBT chip 2000 can be ensured, the structural strength of the copper clad laminate 200 can be improved, and the service life of the copper clad laminate 200 can be prolonged.
  • the heat dissipation module 1000 for an IGBT module by setting the thickness h1 of the first copper layer 220 to be smaller than the thickness h2 of the second copper layer 230, soldering of the chip can be facilitated, so that soldering is performed.
  • the rear copper clad plate 200 is relatively straight, effectively preventing the copper clad laminate 200 from being lifted upward, thereby effectively improving the supporting effect of the copper clad laminate 200 on the electrical components.
  • the package stability of the copper clad laminate 200 and the IGBT chip 2000 can be improved, the operational reliability of the IGBT chip 2000 can be ensured, the structural strength of the copper clad laminate 200 can be improved, and the service life of the copper clad laminate 200 can be prolonged.
  • the substrate 210 may be one of an alumina substrate, an aluminum nitride substrate, and a silicon nitride substrate.
  • the aluminum oxide substrate, the aluminum nitride substrate, and the silicon nitride substrate can achieve a good heat dissipation effect, and the heat dissipation effect of the silicon nitride substrate is greater than that of the aluminum oxide substrate, but the cost of the silicon nitride substrate is higher than that of the aluminum oxide substrate. The cost of the substrate.
  • Thermal expansion coefficient silicon nitride (2.5ppm/K) silicon germanium (2.5ppm/K) ⁇ aluminum nitride (4.7ppm/K) ⁇ alumina (6.8ppm/K), difference in thermal expansion coefficient between substrate 210 and IGBT chip 2000 The smaller the IGBT chip 2000, the better the reliability of the operation.
  • the first copper layer 220 may have a thickness h1 of 0.2 mm to 0.6 mm
  • the second copper layer 230 may have a thickness h2 of 0.2 mm to 0.6 mm.
  • the thicknesses of the first copper layer 220 and the second copper layer 230 may be the same, but the thicknesses of the first copper layer 220 and the second copper layer 230 are different.
  • the thickness h1 of the first copper layer 220 may be 0.2 mm
  • the thickness h2 of the second copper layer 220 may be other than 0.2 mm.
  • the thickness h2 of the second copper layer 230 may be greater than the thickness h1 of the first copper layer 220.
  • the thickness h3 of the substrate 210 may be 0.25 mm to 1 mm.
  • the reliability of the first copper layer 220 and the second copper layer 230 mounted on the substrate 210 can be ensured, the supporting effect of the copper clad laminate 200 on the electrical components can be improved, and the structural strength of the copper clad laminate 200 can be ensured. , thereby extending the service life of the copper clad laminate 200.
  • the copper clad laminate 200 may be plural, and the plurality of copper clad laminates 200 are spaced along the length direction of the heat sink base plate 100 (ie, the front-rear direction shown in FIG. 9). Open the settings.
  • the distance L3 between adjacent two copper clad laminates 200 is from 3 mm to 10 mm.
  • the area of the portion of the first surface layer 11 that is in contact with the cooling liquid is S1
  • the area of the portion of the first surface layer 11 that is in contact with each of the heat dissipation columns 20 is S2, and 180 ⁇ S1/S2 ⁇ 800.
  • the first skin layer 11 is in contact with the coolant
  • the area S1 of the portion is reasonable in design
  • the area S2 of the portion of the first surface layer 11 in contact with each of the heat dissipation columns 20 is designed reasonably, so that the heat exchange between the first surface layer 11 and the N heat dissipation columns 20 and the cooling liquid is stable and reliable, respectively.
  • the number of the heat dissipation posts 20 satisfies the relationship: 300 ⁇ N ⁇ 650. Therefore, in the case that the heat exchange effect between the heat dissipation column 20 and the coolant is ensured, the number of the heat dissipation columns 20 on the heat sink base plate 100 can be effectively reduced, thereby reducing the processing technology requirements of the heat sink base plate 100, and reducing the heat sink base plate 100.
  • the demoulding difficulty is to reduce the production difficulty of the heat sink base plate 100, thereby improving the yield of the heat sink base plate 100 and reducing the production cost of the heat sink base plate 100.
  • the heat dissipation area of each of the heat dissipation columns is (S3 + S4) / N, and 80 ⁇ (S3 + S4) / N ⁇ 120.
  • the volume setting of the heat dissipation module 1000 can be made reasonable, and the heat exchange effect between the first surface layer 11 and the N heat dissipation columns 20 and the cooling liquid can be ensured, thereby
  • the heat dissipation capability of the heat sink base plate 100 is good and the heat dissipation area is designed reasonably, thereby effectively ensuring the heat dissipation effect of the heat sink.
  • each of the heat dissipation columns 20 is stably connected to the first surface layer 11, and the heat dissipation column 20 is structurally reliable, and is advantageous for the heat dissipation column 20 and cooling. Heat exchange of liquid.
  • the specific structure of the heat dissipation column 20 is not limited.
  • the heat dissipation post 20 may be configured as a tapered structure, and the cross section of the heat dissipation post 20 may be circular, and the ratio of the radius of the fixed end 22 of the heat dissipation post 20 to the radius of the free end 21 is ⁇ , and 1.2 ⁇ ⁇ ⁇ 1.8.
  • the radius of the free end 21 of the heat dissipation column 20 is r1
  • the heat dissipating post 20 satisfying the above relationship has a reliable structure and a large area of the portion in contact with the cooling liquid, thereby facilitating heat exchange between the heat dissipating post 20 and the cooling liquid, and fully ensuring the heat dissipating effect of the heat sink.
  • a 1.69.
  • the cooling liquid is adapted to be placed in the cooling bath 30, and the cooling tank 30 is adapted to be coupled to the first skin layer 11, ie, the first skin layer 11 is covered by cooling.
  • the groove 30 is disposed such that the N heat dissipation columns 20 are located in the cooling groove 30, and the minimum distance between the free end 21 of the heat dissipation column 20 and the bottom wall of the cooling groove 30 is L1, and 0.2 Mm ⁇ L1 ⁇ 2 mm. It can be understood that the length of the heat dissipation column 20 is limited by the depth of the cooling groove 30, so that the length of the heat dissipation column 20 can be made reasonable by appropriately setting the depth of the cooling groove 30.
  • the cooling groove 30 and the heat dissipation column 20 satisfying the above relationship can reduce the interference of the cooling groove 30 with the heat dissipation column 20, and can ensure the normal operation of the heat dissipation column 20.
  • the distance between two adjacent heat dissipation columns 20 is L2, and 0.4 mm ⁇ L2 ⁇ 1.1 mm.
  • the distance L2 between the adjacent two heat dissipation columns 20 satisfying the above relationship may make the N heat dissipation columns 20 be disposed on the first surface layer 11 reasonably, and at least to some extent, between the adjacent two heat dissipation columns 20 Interference with each other can ensure normal heat exchange between each heat sink 20 and the coolant, thereby ensuring the normal operation of the heat sink base plate 100.
  • any two adjacent heat dissipation columns 20 may constitute a group, wherein the distance L2 in one set of heat dissipation columns 20 and the distance L2 in the other set of heat dissipation columns 20 may not be equal. Therefore, it can be understood that the distance L2 between the adjacent two heat dissipation columns 20 can be adjusted according to actual production conditions, so that the production difficulty of the heat sink base plate 100 can be reduced at least to some extent. For example, the distance L2 between two adjacent heat dissipation columns 20 disposed adjacent to the corners of the first skin layer 11 can be adjusted as the case may be.
  • N the distance L2 in the first group of heat dissipation columns 20 is 0.62 mm
  • the second The distance L2 in the group heat dissipation column 20 is 1.038 mm
  • the distance L2 in the remaining group of heat dissipation columns 20 satisfies the following condition: 0.62 mm ⁇ L2 ⁇ 1.04 mm.
  • the distance L2 between the adjacent two heat dissipating columns 20 can be at least 0.62 mm and the maximum can be 1.04 mm.
  • the draft angle ⁇ of each of the heat dissipation columns 20 may be 2 degrees to 4 degrees.
  • the draft angle ⁇ of one heat dissipation column 20 may be different from the draft angle ⁇ of the other heat dissipation column 20, or may be the same.
  • the heat dissipation column 20 having the draft angle ⁇ satisfying the above angle range can at least reduce the difficulty of demolding the heat sink base plate 100 and improve the production yield of the heat sink base plate 100.
  • the heat dissipation effect of the heat dissipation column 20 having a draft angle ⁇ of 2 degrees is slightly better than that of the heat dissipation column 20 having a draft angle ⁇ of 4 degrees, but there is no significant improvement. Since the draft angle ⁇ is increased, the draft can be more favorable, and the pressure difference between the inlet and the outlet can be minimized. Therefore, the draft angle ⁇ of the heat dissipation column 20 can be determined according to the process difficulty and actual needs.
  • the body portion 13, the first skin layer 11, the second skin layer 12, and the heat dissipation column 20 may be integrally molded by pneumatic percolation.
  • the integrally formed radiator bottom plate 100 has high structural strength, long service life, and simple manufacturing process.
  • the body portion 13 may be made of aluminum silicon carbide having a volume fraction of 60% to 70%.
  • the volume fraction refers to the ratio of the volume of silicon carbide to the volume of aluminum silicon carbide. It can be understood that the above ratio is adopted.
  • the body portion 13 made of aluminum silicon carbide has a reliable structure, good heat exchange capability, and low heat dissipation efficiency while being low in manufacturing cost.
  • the body portion 13 may be made of aluminum silicon carbide having a volume fraction of 65%.
  • the heat dissipation column 20 may be an aluminum column or an aluminum alloy column, and the first skin layer 11 and the second skin layer 12 may each be an aluminum layer or an aluminum alloy layer. Thereby, heat exchange between the electric component and the second skin 12 is facilitated, and heat exchange between the coolant and the first skin 11 and the heat dissipation column 20 is facilitated, and the manufacturing cost is lowered.
  • a numerical setting of the heat dissipation module 1000 for an IGBT module according to an embodiment of the present disclosure is given below, but the present disclosure is not limited thereto.
  • the arrangement of the N heat dissipation columns 20 disposed on the first surface layer 11 is various.
  • the arrangement of the N heat dissipation columns 20 is provided below.
  • the N heat dissipation columns 20 may be divided into a plurality of rows, and the plurality of rows of heat dissipation columns 20 are spaced along the length direction of the heat sink base plate 100 (ie, the front-rear direction shown in FIG. 3), and the plurality of rows of heat dissipation columns 20 include the length along the heat sink base plate 100.
  • an IGBT module includes the above-described heat dissipation module 1000 and IGBT chip 2000 for an IGBT module, and the IGBT chip 2000 is disposed on a copper clad laminate 200 of the heat dissipation module 1000.
  • the thickness h1 of the first copper layer 220 is smaller than the thickness h2 of the second copper layer 230, the soldering of the chip can be facilitated, so that the copper clad laminate 200 after soldering is relatively straight, effectively preventing the copper clad laminate 200 from tilting up, thereby The effect of supporting the electrical components of the copper clad laminate 200 is effectively improved.
  • the package stability of the copper clad laminate 200 and the IGBT chip 2000 can be improved, the operational reliability of the IGBT chip 2000 can be ensured, the structural strength of the copper clad laminate 200 can be improved, and the copper clad laminate can be extended. 200 lifetime.
  • each copper clad plate 200 is 61 ⁇ 67 ⁇ 0.92 mm
  • the body portion 13 of the bottom plate body 10 of the heat sink base plate 100 is made of a composite material of aluminum silicon carbide component, and the voltage is 480V, current 0-150A, gradually increase the output phase current from 0 to 150A.
  • the purpose of the test is to test the maximum temperature of the IGBT module, and to measure the steady-state thermal resistance of the copper clad laminate 200 with a thermal resistance tester.
  • the substrate 210 of the copper clad laminate 200 may be an aluminum nitride substrate, an aluminum oxide substrate, and a silicon nitride substrate, respectively.
  • the model of the IGBT chip 2000 is IGC193T120T8RMA, and the highest withstand voltage and maximum continuous current of the IGBT chip 2000 are 1200v/200A, respectively, and the production company of the IGBT chip 2000 is Infineon.
  • the test results of the IGBT module are introduced.
  • the nitrogen is measured by a thermal resistance tester.
  • the solid-state thermal resistance of the copper-clad board 200 of the aluminum substrate is 0.08802 k/w, and the maximum temperature is 83 ° C;
  • the steady-state thermal resistance of the copper-clad board 200 of the alumina substrate is 0.09226 k/w, and the maximum temperature is 85 ° C;
  • the copper-clad plate 200 of the silicon substrate has a steady-state thermal resistance of 0.08926 k/w and a maximum temperature of 83 °C. It can be known that the IGBT modules using the above three kinds of substrates 210 can meet the heat dissipation requirements, and the heat dissipation effect of the IGBT module is good.
  • first and second are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated.
  • features defining “first” or “second” may include at least one of the features, either explicitly or implicitly.
  • the meaning of "a plurality” is at least two, such as two, three, etc., unless specifically defined otherwise.
  • the terms “installation”, “connected”, “connected”, “fixed”, and the like, are to be understood broadly, and may be either a fixed connection or a detachable connection, unless explicitly stated or defined otherwise. Or in one piece; it may be a mechanical connection, or it may be an electrical connection or a communication with each other; it may be directly connected or indirectly connected through an intermediate medium, and may be an internal connection of two elements or an interaction relationship between two elements. Unless otherwise expressly defined. The specific meanings of the above terms in the present disclosure can be understood by those skilled in the art on a case-by-case basis.
  • the first feature "on” or “under” the second feature may be a direct contact of the first and second features, or the first and second features may be indirectly through an intermediate medium, unless otherwise explicitly stated and defined. contact.
  • the first feature "above”, “above” and “above” the second feature may be that the first feature is directly above or above the second feature, or merely that the first feature level is higher than the second feature.
  • the first feature “below”, “below” and “below” the second feature may be that the first feature is directly below or obliquely below the second feature, or merely that the first feature level is less than the second feature.

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Abstract

La présente invention concerne un module de dissipation de chaleur pour un module de transistor bipolaire à porte isolée et un module de transistor bipolaire à porte isolée le comprenant. Le module de dissipation de chaleur comprend : une plaque de base de radiateur, la plaque de base de radiateur comprenant : un corps de plaque de base et N colonnes de dissipation de chaleur, le corps de plaque de base comprenant une partie de corps et une première enveloppe ainsi qu'une seconde enveloppe disposées respectivement sur deux surfaces opposées de la partie de corps, la partie de corps étant constituée de carbure d'aluminium et de silicium, les N colonnes de dissipation de chaleur étant espacées sur la première enveloppe, et une extrémité de chaque colonne de dissipation de chaleur étant fixée à la première enveloppe et son autre extrémité étant une extrémité libre, la première enveloppe et les N colonnes de dissipation de chaleur étant appropriées pour venir en contact avec un liquide de refroidissement; et un stratifié cuivré, le stratifié cuivré comprenant un substrat, une première couche de cuivre et une seconde couche de cuivre, la première couche de cuivre et la seconde couche de cuivre étant respectivement disposées sur deux surfaces opposées du substrat, et l'épaisseur de la première couche de cuivre étant inférieure à l'épaisseur de la seconde couche de cuivre, la première couche de cuivre étant disposée sur la seconde enveloppe.
PCT/CN2016/107345 2015-11-30 2016-11-25 Module de dissipation de chaleur pour module de transistor bipolaire à porte isolée et module de transistor bipolaire à porte isolée le comprenant WO2017092628A1 (fr)

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CN201520976338.0U CN205491580U (zh) 2015-11-30 2015-11-30 Igbt散热模组以及具有其的igbt模组

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CN205491580U (zh) * 2015-11-30 2016-08-17 比亚迪股份有限公司 Igbt散热模组以及具有其的igbt模组
CN112289207B (zh) * 2019-07-23 2023-06-13 深圳光峰科技股份有限公司 Led显示装置

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CN104185900A (zh) * 2012-03-30 2014-12-03 三菱综合材料株式会社 功率模块用基板、自带散热器的功率模块用基板以及功率模块
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CN205430852U (zh) * 2015-11-30 2016-08-03 惠州比亚迪实业有限公司 Igbt散热模组以及具有其的igbt模组
CN205491580U (zh) * 2015-11-30 2016-08-17 比亚迪股份有限公司 Igbt散热模组以及具有其的igbt模组

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