WO2017092075A1 - 一种环境传感器及其制造方法 - Google Patents

一种环境传感器及其制造方法 Download PDF

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Publication number
WO2017092075A1
WO2017092075A1 PCT/CN2015/097317 CN2015097317W WO2017092075A1 WO 2017092075 A1 WO2017092075 A1 WO 2017092075A1 CN 2015097317 W CN2015097317 W CN 2015097317W WO 2017092075 A1 WO2017092075 A1 WO 2017092075A1
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WIPO (PCT)
Prior art keywords
substrate
groove
film layer
sacrificial layer
environmental sensor
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Ceased
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PCT/CN2015/097317
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English (en)
French (fr)
Inventor
詹竣凯
蔡孟锦
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Goertek Inc
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Goertek Inc
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Priority to US15/781,352 priority Critical patent/US10760929B2/en
Publication of WO2017092075A1 publication Critical patent/WO2017092075A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
    • G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
    • G01D5/12—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means
    • G01D5/14—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage
    • G01D5/24—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage by varying capacitance
    • G01D5/241—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage by varying capacitance by relative movement of capacitor electrodes
    • G01D5/2417—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage by varying capacitance by relative movement of capacitor electrodes by varying separation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/34—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using capacitative elements
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
    • B81C1/00182—Arrangements of deformable or non-deformable structures, e.g. membrane and cavity for use in a transducer
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00214—Processes for the simultaneaous manufacturing of a network or an array of similar microstructural devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
    • G01L9/0045—Diaphragm associated with a buried cavity
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
    • G01L9/0047—Diaphragm with non uniform thickness, e.g. with grooves, bosses or continuously varying thickness
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0072—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance
    • G01L9/0073—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance using a semiconductive diaphragm
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0214—Biosensors; Chemical sensors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0221—Variable capacitors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0264—Pressure sensors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0278—Temperature sensors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2207/00—Microstructural systems or auxiliary parts thereof
    • B81B2207/05—Arrays
    • B81B2207/053—Arrays of movable structures

Definitions

  • the present invention relates to the field of sensors and, more particularly, to an environmental sensor for measurement; the present invention also relates to an environmental sensor manufacturing method.
  • sensors have been widely used in electronic products such as mobile phones and notebook computers.
  • two conductive film layers are generally deposited on the surface of the substrate by means of semiconductor processing, and the two conductive film layers constitute a parallel capacitor structure.
  • the parallel capacitor structure can output a corresponding detected electrical signal.
  • This parallel arrangement of the capacitor structure occupies a large area and does not meet the modern development requirements.
  • an environmental sensor comprising a substrate having at least one recess at an upper end of the substrate, and further comprising a sensitive film layer above the substrate, the sensitive film layer comprising a fixing portion fixed to the end surface of the substrate, and a curved portion extending into the groove, the curved portion and the side wall of the groove forming a capacitor for detecting a signal; wherein the bending portion and the fixing portion are The groove forms a closed cavity.
  • the curved portion is suspended in the groove.
  • the bottom end of the bent portion is fixed to the bottom end of the groove by the first sacrificial layer.
  • the sensitive film layer further comprises a connecting portion connecting adjacent two curved portions, the connecting The joint is suspended above the end surface of the substrate.
  • a hollowing is further provided on the connecting portion, the hollowing is insulating the adjacent two curved portions; and further comprising filling the hollowed second sacrificial layer.
  • the invention also provides an environmental sensor comprising a substrate, at least one groove is disposed at an upper end of the substrate, and further comprises a fixed film layer disposed on the sidewall of the substrate groove through the insulating layer; a sensitive film layer above the substrate, the sensitive film layer comprising a fixing portion fixed on the end surface of the substrate, and a bending portion extending into the groove, the bending portion and the side wall of the fixing film layer are used for And a capacitor for detecting a signal; wherein the bent portion, the fixed portion and the groove form a sealed cavity.
  • the invention also provides a method for manufacturing an environmental sensor, comprising the following steps;
  • the method further comprises the steps of: etching a position on both sides of the second sacrificial layer on the hollow to form a sidewall groove, and depositing protection on the upper end of the second sacrificial layer The layer is simultaneously filled in the sidewall grooves.
  • the first sacrificial layer between the curved portion and the groove is completely etched away, so that the bent portion is suspended in the groove.
  • the method before depositing the first sacrificial layer, further comprises the steps of sequentially depositing a third sacrificial layer and fixing the film layer on the inner wall of the groove.
  • the curved portion of the sensitive film layer and the side wall of the groove constitute a vertical capacitor structure, and when the external environment changes (for example, pressure changes), the curved portion will follow. Deformation occurs whereby the distance between the bend and the sidewall of the recess can be varied to cause a change in the signal output by the capacitor.
  • the environmental sensor of the present invention changes the capacitor structure conventionally disposed on the surface of the substrate to a capacitor structure that vertically extends into the interior of the substrate, and increases the depth of the groove to increase the sensing area between the two plates of the capacitor. Therefore, the coverage area of the capacitor on the substrate can be greatly reduced, and the light and thin development of modern electronic devices can be satisfied.
  • the inventors of the present invention have found that in the prior art, the sensor is laid on the surface of the substrate, thereby occupying a large amount of chip area, which is disadvantageous for the development of sensor miniaturization. Therefore, the technical task to be achieved by the present invention or the technical problem to be solved is not thought of or expected by those skilled in the art, so the present invention is a new technical solution.
  • FIG. 1 is a schematic structural view of an environmental sensor of the present invention.
  • 2 to 10 are process flow diagrams of a method of manufacturing an environmental sensor of the present invention.
  • FIG. 11 is a schematic structural view of another embodiment of the environmental sensor of the present invention.
  • the present invention provides an environmental sensor, which may be a pressure sensor, a temperature sensor, a humidity sensor, or the like, for detecting a surrounding environment, and includes a substrate 1 provided on an upper end surface of the substrate 1 At least one groove 1a, the number of the grooves 1a may be set according to actual structural needs, and the shape of the groove 1a may be a U-shaped groove structure, or may be a circular groove structure or the like well known to those skilled in the art.
  • the environmental sensor of the present invention further includes a sensitive film layer 3 located above the substrate 1, the sensitive film layer 3 comprising a fixing portion 3b fixed to the end surface of the substrate 1, and a curved portion 3a extending into the groove 1a,
  • the curved portion 3a and the side wall of the recess 1a constitute a capacitor structure for detecting the surrounding environment.
  • the sensitive film layer 3 may be made of a polysilicon material, which may be disposed on the substrate 1 by deposition or the like.
  • the first sacrificial layer 2 may be disposed between the fixing portion 3b and the substrate 1 .
  • the sacrificial layer may be a material well known to those skilled in the art such as silicon oxide, and the sacrificial layer may also be used as an insulating layer to ensure insulation between components, which is common knowledge of those skilled in the art. It will not be specified here.
  • the fixing portion 3b and the substrate 1 are insulated from each other by the first sacrificial layer 2; while the first sacrificial layer 2 can support the sensitive film layer 3 above the substrate 1, preventing the curved portion 3a in the sensitive film layer 3 It is in contact with the substrate 1.
  • the curved portion 3a is matched with the shape of the recess 1a.
  • the curved portion 3a may be selected from a U-shaped groove structure, or a circular arc groove structure well known to those skilled in the art may be selected.
  • the bent portion 3a is smaller than the size of the groove 1a so that the bent portion 3a can protrude into the groove 1a.
  • the curved portion 3a and the fixed portion 3b together with the recess 1a form a closed cavity.
  • the curved portion 3a of the sensitive film layer and the side wall of the recess 1a constitute a vertical capacitor structure, and when the external environment changes (for example, a pressure change), the curved portion 3a is deformed accordingly. This can change the distance between the curved portion 3a and the side wall of the recess 1a to change the signal output from the capacitor.
  • the environmental sensor of the present invention may be elongated, comb-shaped, spiral or other shape well known to those skilled in the art;
  • the capacitor structure on the surface of the material is changed to a capacitor structure that extends vertically into the substrate. Increasing the depth of the groove increases the sensing area between the two plates of the capacitor, thereby greatly reducing the capacitor on the substrate.
  • the coverage area of the environmental sensor of the present invention can be reduced to 1/5-1/10 of the coverage area of the conventional sensor, or smaller, which satisfies the development of thinning and modernization of modern electronic devices.
  • the curved portion 3a of the sensitive film layer is suspended in the groove 1a of the substrate, that is, there is no connection between the curved portion 3a and the groove 1a, when the outside is
  • the bent portion 3a is deformed accordingly, whereby the distance between the curved portion 3a and the side wall of the recess 1a can be changed to change the signal output from the capacitor.
  • the curved portion 3a of the sensitive film layer protrudes into the groove 1a of the substrate, and the bottom end of the curved portion 3a and the bottom end of the groove 1a pass through the second sacrificial layer. 4 are joined together, that is, the bottom end of the bent portion 3a is fixed by the second sacrificial layer 4.
  • the curved portion 3a can be prevented from swinging in the groove 1a, and only the position of the side wall of the curved portion 3a is deformed according to changes in the external environment. This changes the distance between the bent portion 3a and the side wall of the recess 1a, causing a change in the signal output from the capacitor.
  • the fixing portion 3b when the number of the grooves 1a is provided in plurality, the fixing portion 3b may be disposed at an edge position of each of the grooves 1a, or may be provided only at the edge of the outermost groove 1a.
  • the sensitive film layer 3 When disposed at the edge of the outermost groove 1a, the sensitive film layer 3 further includes a connecting portion 3d connecting the adjacent two curved portions 3a, with reference to FIG. 1, and the connecting portion 3d is preferably suspended at the end surface of the substrate 1.
  • the connecting portion 3d is preferably suspended at the end surface of the substrate 1.
  • the environmental sensor of the present invention can be provided with a plurality of sets of capacitor structures according to actual needs, which requires a hollow 3c to be provided on some of the connecting portions 3d.
  • the adjacent two curved portions 3a are insulated by the hollow 3c;
  • a protective layer 5 may be provided, by which water or mist can be prevented from entering the interior of the environmental sensor.
  • the capacitor structure of the environmental sensor is formed by the curved portion 3a of the sensitive film layer.
  • the side wall of the groove 1a is formed.
  • a capacitor structure for detecting a signal is constructed.
  • the substrate 1 may be a single crystal silicon material, and the fixed film layer 8 and the sensitive film layer 3 may each be made of a polysilicon material; in order to ensure insulation between the fixed film layer 8 and the substrate 1, the fixed film layer 8 and the groove 1a are A third insulating layer 7 is disposed between the sidewalls, and the third insulating layer 7 may be made of a silicon dioxide material like the first insulating layer 2 described above.
  • the third insulating layer 7 and the fixed film layer 8 may be disposed only on the sidewall of the recess 1a; or may extend to the entire upper end surface of the substrate 1, for example, may be sequentially formed on the upper end of the substrate 1 by deposition or the like.
  • the insulating layer 7, the fixed film layer 8, the third insulating layer 7, and the fixed film layer 8 are matched to the shape of the entire upper end of the substrate 1. That is, at the position of the groove 1a, the third insulating layer 7, the fixed film layer 8 extends along the inner wall of the groove 1a in a shape matching the groove 1a.
  • the external environment changes for example, a pressure change
  • the bent portion 3a is deformed accordingly, whereby the distance between the curved portion 3a and the side wall of the fixed film layer 8 can be changed to change the signal output from the capacitor.
  • the invention also provides a method for manufacturing an environmental sensor, comprising the following steps;
  • the substrate 1 may be made of a single crystal silicon material, and the shape of the groove 1a is selected according to actual needs, for example, a U-shaped groove, a circular arc groove structure, or the like; the first sacrificial layer 2 is deposited on the entire upper end surface of the substrate 1, and Matching the shape of the entire upper end of the substrate 1;
  • the sacrificial layer may be a material well known to those skilled in the art such as silicon oxide, and the sacrificial layer may also be used as an insulating layer to ensure insulation between components, which is common knowledge of those skilled in the art. It will not be specified here.
  • the sensitive film layer 3 further includes a connecting portion 3d connecting the adjacent two curved portions 3a.
  • the sensitive film layer 3 may be made of a polysilicon material deposited on the first sacrificial layer. The upper end of 2 matches the shape of the entire end surface of the first sacrificial layer 2;
  • the hollow 3c can be used as an etching hole to etch the first sacrificial layer 2; and the hollowing out can also be used according to actual design requirements.
  • 3c isolating the two adjacent curved portions 3a from each other, for example, when it is required to form a plurality of sets of capacitor structures in the substrate 1, that is, when it is necessary to insulate some adjacent curved portions 3a from each other, the hollowing out may be provided.
  • 3c penetrates to both ends of the connecting portion 3d, so that the adjacent two curved portions 3a are completely disconnected;
  • the first sacrificial layer 2 between the curved portion 3a and the sidewall of the recess 1a is etched away by the hollow 3c, referring to FIG. 6;
  • the first sacrificial layer 2 may be etched by hydrofluoric acid, which belongs to the present Common knowledge of those skilled in the art will not be specifically described herein;
  • the first sacrificial layer 2 between the curved portion 3a and the sidewall of the recess 1a is etched away by etching, leaving the first sacrifice between the curved portion 3a and the bottom end of the recess 1a.
  • the layer 2 is such that the bottom end of the bent portion 3a is fixed to the bottom end of the recess 1a by the first sacrificial layer 2; that is, the bottom end of the bent portion 3a is connected to the bottom end of the recess 1a through the first sacrificial layer 2,
  • the side wall of the curved portion 3a and the side wall of the recess 1a constitute a capacitor structure of the environmental sensor.
  • the first sacrificial layer 2 between the curved portion 3a and the groove 1a is completely etched away by the hollow 3c, so that there is no connection between the curved portion 3a and the groove 1a. That is, the bent portion 3a is suspended in the recess 1a of the substrate 1, thereby improving the sensitivity of the bent portion 3a, which is advantageous for improving the detection accuracy of the capacitor structure.
  • the first sacrificial layer 2 under the connecting portion 3d is also etched away by etching, so that the connecting portion 3d is suspended on the end surface of the substrate 1, which improves the sensitivity of the bent portion 3a connected thereto, and further improves The detection accuracy of the capacitor structure;
  • the method further includes the steps of: etching the positions on the two sides of the second sacrificial layer 4 on the hollow to form the sidewall groove 4a, Figure 8, and depositing a protective layer 5 on the upper end of the second sacrificial layer 4, the protective layer 5 It is filled in the sidewall groove 4a, and then the protective layer 5 is patterned and etched, referring to FIG.
  • the protective layer 5 may be formed of a silicon nitride material in a hollowed out position by deposition, etching, etc., in a manner well known to those skilled in the art.
  • the method further comprises the step of depositing a metal electrode 6 on the substrate 1, the sensitive film layer 3, the metal electrode 6 serving as two capacitor leads Solder joints to facilitate the extraction of the capacitor's signal, see Figure 10.
  • the third sacrificial layer 7 is sequentially deposited on at least the inner wall of the recess 1a.
  • the fixed film layer 8 is fixed on the inner wall of the groove 1a of the substrate 1, and the curved portion 3a of the sensitive film layer 3 is formed by the subsequent steps, so that the curved portion 3a and the fixed film layer 3 are formed for detecting electricity.
  • the capacitor structure of the signal changes.

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Abstract

一种环境传感器及其制造方法，包括基材（1），在所述基材（1）的上端设有至少一个凹槽（1a），还包括位于基材（1）上方的敏感膜层（3），所述敏感膜层（3）包括固定在基材（1）端面上的固定部（3b），以及伸入至凹槽（1a）内的弯曲部（3a），所述弯曲部（3a）与凹槽（1a）的侧壁构成了用于检测信号的电容器；其中，所述弯曲部（3a）、固定部（3b）与凹槽（1a）形成了密闭的容腔。该环境传感器，将传统设置在基材表面的电容器结构，改为垂直伸入基材内部的电容器结构，加大凹槽的深度即可增大电容器两个极板之间的感测面积，由此可大大缩小电容器在基材上的覆盖面积，满足了现代电子器件的轻薄化发展。

Description

一种环境传感器及其制造方法 技术领域
本发明涉及传感器领域，更具体地，涉及一种用于测量的环境传感器；本发明还涉及一种环境传感器制造方法。
背景技术
近年来，随着科学技术的发展，手机、笔记本电脑等电子产品的体积在不断减小，而且人们对这些便携电子产品的性能要求也越来越高，这就要求与之配套的电子零部件的体积也必须随着减小。
传感器作为测量器件，已经普遍应用在手机、笔记本电脑等电子产品上。在现有的工艺结构中，一般都是通过半导体加工的方式，在基材的表面沉积两个导电膜层，该两个导电膜层构成了平行电容结构。当外界的环境变化时，两个导电膜层之间的距离或相对面积发生变化，由此该平行电容结构可输出相应的检测电信号。这种平行设置的电容结构，占用的面积较大，不符合现代的发展要求。
发明内容
本发明的一个目的是提供一种环境传感器的新技术方案。
根据本发明的第一方面，提供了一种环境传感器，包括基材，在所述基材的上端设有至少一个凹槽，还包括位于基材上方的敏感膜层，所述敏感膜层包括固定在基材端面上的固定部，以及伸入至凹槽内的弯曲部，所述弯曲部与凹槽的侧壁构成了用于检测信号的电容器；其中，所述弯曲部、固定部与凹槽形成了密闭的容腔。
优选地，所述弯曲部悬空在所述凹槽内。
优选地，所述弯曲部的底端通过第一牺牲层固定在凹槽的底端。
优选地，所述敏感膜层还包括连接相邻两个弯曲部的连接部，所述连 接部悬空在基材端面的上方。
优选地，在所述连接部上还设置有镂空，所述镂空将相邻两个弯曲部绝缘开；还包括填充所述镂空的第二牺牲层。
本发明还提供了一种环境传感器，包括基材，在所述基材的上端设有至少一个凹槽，还包括通过绝缘层至少设置在基材凹槽侧壁上的固定膜层；还包括位于基材上方的敏感膜层，所述敏感膜层包括固定在基材端面上的固定部，以及伸入至凹槽内的弯曲部，所述弯曲部与固定膜层的侧壁构成了用于检测信号的电容器；其中，所述弯曲部、固定部与凹槽形成了密闭的容腔。
本发明还提供了一种环境传感器的制造方法，包括以下步骤；
a)在基材的上端面刻蚀出凹槽，并在基材的上端面、凹槽的内壁上沉积第一牺牲层；
b)在第一牺牲层的上方沉积敏感膜层，该敏感膜层包括位于基材端面上的固定部，以及伸入至凹槽内的弯曲部；
c)对位于基材端面上的敏感膜层进行刻蚀，形成镂空；
d)通过该镂空至少将位于弯曲部与凹槽侧壁之间的第一牺牲层腐蚀掉；
e)在所述敏感膜层的上方沉积第二牺牲层，且该第二牺牲层将所述镂空密封；
f)将位于弯曲部上方位置的第二牺牲层腐蚀掉。
优选地，在步骤e)与步骤f)之间，还包括以下步骤：对第二牺牲层上位于镂空两侧的位置进行刻蚀以形成侧壁槽，并在第二牺牲层的上端沉积保护层，该保护层同时填充在侧壁槽内。
优选地，所述步骤d)中，将弯曲部与凹槽之间的第一牺牲层完全腐蚀掉，使弯曲部悬空在凹槽内。
优选地，所述步骤a)中在沉积第一牺牲层之前，还包括在凹槽的内壁上依次沉积第三牺牲层、固定膜层的步骤。
本发明的环境传感器，敏感膜层的弯曲部与凹槽的侧壁构成了垂直式的电容器结构，当外界环境发生变化(例如压力变化)时，弯曲部会随之 发生形变，由此可以改变弯曲部与凹槽侧壁之间的距离，使该电容器输出的信号发生变化。本发明的环境传感器，将传统设置在基材表面的电容器结构，改为垂直伸入基材内部的电容器结构，加大凹槽的深度即可增大电容器两个极板之间的感测面积，由此可大大缩小电容器在基材上的覆盖面积，满足了现代电子器件的轻薄化发展。
本发明的发明人发现，在现有技术中，传感器采用平铺在基材的表面上，由此占用了大量的芯片面积，不利于传感器小型化的发展。因此，本发明所要实现的技术任务或者所要解决的技术问题是本领域技术人员从未想到的或者没有预期到的，故本发明是一种新的技术方案。
通过以下参照附图对本发明的示例性实施例的详细描述，本发明的其它特征及其优点将会变得清楚。
附图说明
被结合在说明书中并构成说明书的一部分的附图示出了本发明的实施例，并且连同其说明一起用于解释本发明的原理。
图1是本发明环境传感器的结构示意图。
图2至图10是本发明环境传感器制造方法的工艺流程图。
图11是本发明环境传感器另一实施方式的结构示意图。
具体实施方式
现在将参照附图来详细描述本发明的各种示例性实施例。应注意到：除非另外具体说明，否则在这些实施例中阐述的部件和步骤的相对布置、数字表达式和数值不限制本发明的范围。
以下对至少一个示例性实施例的描述实际上仅仅是说明性的，决不作为对本发明及其应用或使用的任何限制。
对于相关领域普通技术人员已知的技术、方法和设备可能不作详细讨论，但在适当情况下，所述技术、方法和设备应当被视为说明书的一部分。
在这里示出和讨论的所有例子中，任何具体值应被解释为仅仅是示例性的，而不是作为限制。因此，示例性实施例的其它例子可以具有不同的 值。
应注意到：相似的标号和字母在下面的附图中表示类似项，因此，一旦某一项在一个附图中被定义，则在随后的附图中不需要对其进行进一步讨论。
参考图1，本发明提供了一种环境传感器，其可以是压力传感器、温度传感器、湿度传感器等用于检测周围环境的传感器，其包括基材1，在所述基材1的上端面设有至少一个凹槽1a，凹槽1a的数量可以根据实际结构需要进行设置，该凹槽1a的形状可以是U形槽结构，也可以是本领域技术人员所熟知的圆弧槽结构等。
本发明的环境传感器，还包括位于基材1上方的敏感膜层3，该敏感膜层3包括固定在基材1端面上的固定部3b，以及伸入至凹槽1a中的弯曲部3a，其中，所述弯曲部3a与凹槽1a的侧壁构成了用于检测周围环境的电容器结构。具体地，该敏感膜层3可以采用多晶硅材料，其可以通过沉积等方式设置在基材1上。其中，固定部3b与基材1之间可设置第一牺牲层2。在此需要注意的是，牺牲层可以采用氧化硅等本领域技术人员所熟知的材料，牺牲层同时还可以作为绝缘层使用，以保证部件之间的绝缘，这属于本领域技术人员的公知常识，在此不再具体说明。通过第一牺牲层2使固定部3b与基材1之间互相绝缘；同时该第一牺牲层2可以将敏感膜层3支撑在基材1的上方，防止敏感膜层3中的弯曲部3a与基材1接触在一起。
弯曲部3a与凹槽1a的形状相匹配，例如凹槽1a为U形结构时，该弯曲部3a可以选择U形槽结构，也可以选择本领域技术人员所熟知的圆弧槽结构。弯曲部3a小于凹槽1a的尺寸，使得该弯曲部3a可以伸入至凹槽1a内。所述弯曲部3a、固定部3b与凹槽1a共同围成了一密闭的容腔。
本发明的环境传感器，敏感膜层的弯曲部3a与凹槽1a的侧壁构成了垂直式的电容器结构，当外界环境发生变化(例如压力变化)时，弯曲部3a会随之发生形变，由此可以改变弯曲部3a与凹槽1a侧壁之间的距离，使该电容器输出的信号发生变化。本发明的环境传感器，其可以是长条形、梳齿状、螺旋状或者本领域技术人员所熟知的其它形状；将传统设置在基 材表面的电容器结构，改为垂直伸入基材内部的电容器结构，加大凹槽的深度即可增大电容器两个极板之间的感测面积，由此可大大缩小电容器在基材上的覆盖面积，本发明环境传感器的覆盖面积可以缩小至传统传感器覆盖面积的1/5-1/10，或更小，这满足了现代电子器件的轻薄化发展。
在本发明一个优选的实施方式中，所述敏感膜层的弯曲部3a悬空在基材的凹槽1a内，也就是说，弯曲部3a与凹槽1a之间没有任何的连接关系，当外界环境发生变化时，弯曲部3a会随之发生形变，由此可以改变弯曲部3a与凹槽1a侧壁之间的距离，使该电容器输出的信号发生变化。
在本发明另一优选的实施方式中，所述敏感膜层的弯曲部3a伸入至基材的凹槽1a内，且弯曲部3a的底端与凹槽1a的底端通过第二牺牲层4连接在一起，也就是说，通过第二牺牲层4将弯曲部3a的底端固定住。当外界环境发生变化时，由于弯曲部3a的底端被固定住，从而可以防止弯曲部3a在凹槽1a内摆动，只有弯曲部3a侧壁的位置会随外界环境的变化而发生形变，由此改变了弯曲部3a与凹槽1a侧壁之间的距离，使该电容器输出的信号发生变化。
在本发明一个优选的实施方式中，当凹槽1a的数量设置有多个的时候，固定部3b可以设置在每个凹槽1a的边缘位置，也可以仅设置在最外侧凹槽1a的边缘。当设置在最外侧凹槽1a的边缘时，所述敏感膜层3还包括连接相邻两个弯曲部3a的连接部3d，参考图1，且该连接部3d优选悬空在基材1端面的上方。此时由于弯曲部3a、连接部3d与基材1不接触在一起，也就是说，弯曲部3a、连接部3d均处于悬空的状态，这就提高了弯曲部3a的灵敏度，使得最终检测到的结果更为精准。
本发明的环境传感器，可以根据实际需要设置多组电容结构，这就需要在某些连接部3d上还设置镂空3c，参考图5，通过该镂空3c将相邻两个弯曲部3a绝缘开；同时，为了保证该环境传感器具有一密闭的容腔，还需要在镂空3c里填充第二牺牲层4，参考图7。本发明进一步优选的是，在该第二牺牲层的上端还可设置保护层5，通过该保护层5可以防止水或雾气进入至环境传感器的内部。
上述实施例中，环境传感器的电容器结构由敏感膜层的弯曲部3a、凹 槽1a的侧壁构成。在本发明另一具体的实施方式中，参考图11，至少在基材1凹槽1a的侧壁上设置有固定膜层8，该固定膜层8与敏感膜层3弯曲部3a的侧壁构成了用于检测信号的电容器结构。基材1可以采用单晶硅材料，固定膜层8、敏感膜层3均可采用多晶硅材料；为了保证固定膜层8与基材1之间绝缘，在所述固定膜层8与凹槽1a的侧壁之间设置有第三绝缘层7，该第三绝缘层7与上述的第一绝缘层2一样，均可采用二氧化硅材料。
第三绝缘层7、固定膜层8可仅设置在凹槽1a的侧壁上；也可以延伸至基材1的整个上端面，例如可通过沉积等方式在基材1的上端依次形成第三绝缘层7、固定膜层8，该第三绝缘层7、固定膜层8与基材1整个上端的形状相匹配。也就是说，在凹槽1a的位置，第三绝缘层7、固定膜层8沿着凹槽1a的内壁延伸，呈与凹槽1a匹配的形状。当外界环境发生变化(例如压力变化)时，弯曲部3a会随之发生形变，由此可以改变弯曲部3a与固定膜层8侧壁之间的距离，使该电容器输出的信号发生变化。
本发明还提供了一种环境传感器的制造方法，其包括以下步骤；
a)首先，在基材1的上端面刻蚀出多个凹槽1a，参考图2；并在基材1的上端面、凹槽1a的内壁上沉积第一牺牲层2，参考图3；基材1可以采用单晶硅材料，其凹槽1a的形状根据实际需要进行选择，例如采用U形槽、圆弧槽结构等；第一牺牲层2沉积在整个基材1的上端面，并且与基材1整个上端的形状相匹配；
在此需要注意的是，牺牲层可以采用氧化硅等本领域技术人员所熟知的材料，牺牲层同时还可以作为绝缘层使用，以保证部件之间的绝缘，这属于本领域技术人员的公知常识，在此不再具体说明。
b)在第一牺牲层2的上方沉积敏感膜层3，该敏感膜层3包括位于基材1端面上的固定部3b，以及伸入至凹槽1a内的弯曲部3a；当凹槽1a的数量设置有多个时，所述敏感膜层3还包括连接相邻两个弯曲部3a的连接部3d，参考图4，该敏感膜层3可以采用多晶硅材料，其沉积在第一牺牲层2的上端，并与第一牺牲层2整个端面的形状相匹配；
c)对位于基材1端面上的敏感膜层3进行刻蚀，形成镂空3c，参考 图5；具体地，该镂空3c设置在连接部3d位置，在此需要注意的是，该镂空3c可以作为腐蚀孔对第一牺牲层2进行腐蚀；同时也可以根据实际设计需要，通过该镂空3c将两个相邻的弯曲部3a相互隔绝开，例如当需要在基材1形成多组电容器结构的时候，也就是说需要使某些相邻的弯曲部3a相互绝缘时，可以设置该镂空3c贯通至连接部3d的两端，从而使相邻的两个弯曲部3a完全断开；
d)通过该镂空3c至少将位于弯曲部3a与凹槽1a侧壁之间的第一牺牲层2腐蚀掉，参考图6；可利用氢氟酸对第一牺牲层2进行腐蚀，这属于本领域技术人员的公知常识，在此不再具体说明；
在本发明一个具体的实施方式中，通过腐蚀，将弯曲部3a与凹槽1a侧壁之间的第一牺牲层2腐蚀掉，保留弯曲部3a与凹槽1a底端之间的第一牺牲层2，使得弯曲部3a的底端通过第一牺牲层2固定在凹槽1a的底端；也就是说，弯曲部3a的底端通过第一牺牲层2连接在凹槽1a的底端，弯曲部3a的侧壁与凹槽1a的侧壁构成了环境传感器的电容器结构。
在本发明另一具体的实施方式中，通过镂空3c将弯曲部3a与凹槽1a之间第一牺牲层2完全腐蚀掉，使得弯曲部3a与凹槽1a之间没有任何的连接关系，也就是说，所述弯曲部3a悬空在基材1的凹槽1a内，从而提高了弯曲部3a的敏感度，这有利于提高电容器结构的检测精度。
进一步优选的是，通过腐蚀，将连接部3d下方的第一牺牲层2也腐蚀掉，使得连接部3d悬空在基材1的端面上，提高了与其连接的弯曲部3a的敏感度，进一步提高了电容器结构的检测精度；
e)在所述敏感膜层3的上方沉积第二牺牲层4，且该第二牺牲层4将所述镂空3c密封，参考图7；
f)将位于弯曲部3a上方的第二牺牲层4腐蚀掉，从而将弯曲部3a露出，以便该弯曲部3a可以感应外界的环境变化，最终形成了本发明的环境传感器，参考图1。
在本发明一个优选的实施方式中，在步骤e)与步骤f)之间，还包括以下步骤：对第二牺牲层4上位于镂空两侧的位置进行刻蚀以形成侧壁槽4a，参考图8，并在第二牺牲层4的上端沉积保护层5，该保护层5同 时填充在该侧壁槽4a内，之后再对保护层5进行图形化刻蚀，参考图9。保护层5可以采用氮化硅材料，通过沉积、刻蚀的等本领域技术人员所熟知的方式将其设置在镂空的位置上。
本发明进一步优选的是，在所述步骤e)与步骤f)之间，还包括在基材1、敏感膜层3上沉积金属电极6的步骤，该金属电极6可作为电容器引线的两个焊点，以便于将电容器的信号引出，参考图10。
本发明为了得到由弯曲部3a、固定膜层8构成的环境传感器，所述步骤a)中在沉积第一牺牲层2之前，还包括至少在凹槽1a的内壁上依次沉积第三牺牲层7、固定膜层8的步骤。通过该步骤将固定膜层8固定在基材1凹槽1a的内壁上，通过后续的步骤形成敏感膜层3的弯曲部3a，从而使弯曲部3a与固定膜层3构成了用于检测电信号变化的电容器结构。
本发明的环境传感器及其制造方法，还包括用于封装的外壳(视图未给出)，所述外壳可以固定在基材1上，并将MEMS环境传感器的电容器结构封装起来，对应地，还设置有连通MEMS环境传感器弯曲部与外界的导通孔等，这属于本领域技术人员的公知常识，在此不再具体说明。
虽然已经通过例子对本发明的一些特定实施例进行了详细说明，但是本领域的技术人员应该理解，以上例子仅是为了进行说明，而不是为了限制本发明的范围。本领域的技术人员应该理解，可在不脱离本发明的范围和精神的情况下，对以上实施例进行修改。本发明的范围由所附权利要求来限定。

Claims (10)

  1. 一种环境传感器，其特征在于：包括基材(1)，在所述基材(1)的上端设有至少一个凹槽(1a)，还包括位于基材(1)上方的敏感膜层(3)，所述敏感膜层(3)包括固定在基材(1)端面上的固定部(3b)，以及伸入至凹槽(1a)内的弯曲部(3a)，所述弯曲部(3a)与凹槽(1a)的侧壁构成了用于检测信号的电容器；其中，所述弯曲部(3a)、固定部(3b)与凹槽(1a)形成了密闭的容腔。
  2. 根据权利要求1所述的环境传感器，其特征在于：所述弯曲部(3a)悬空在所述凹槽(1a)内。
  3. 根据权利要求1所述的环境传感器，其特征在于：所述弯曲部(3a)的底端通过第一牺牲层(2)固定在凹槽(1a)的底端。
  4. 根据权利要求1所述的环境传感器，其特征在于：所述敏感膜层(3)还包括连接相邻两个弯曲部(3a)的连接部(3d)，所述连接部(3d)悬空在基材(1)端面的上方。
  5. 根据权利要求4所述的环境传感器，其特征在于：在所述连接部(3d)上还设置有镂空(3c)，所述镂空(3c)将相邻两个弯曲部(3a)绝缘开；还包括填充所述镂空(3c)的第二牺牲层(4)。
  6. 一种环境传感器，其特征在于：包括基材(1)，在所述基材(1)的上端设有至少一个凹槽(1a)，还包括通过绝缘层至少设置在基材(1)凹槽(1a)侧壁上的固定膜层(8)；还包括位于基材(1)上方的敏感膜层(3)，所述敏感膜层(3)包括固定在基材(1)端面上的固定部(3b)，以及伸入至凹槽(1a)内的弯曲部(3a)，所述弯曲部(3a)与固定膜层(8)的侧壁构成了用于检测信号的电容器；其中，所述弯曲部(3a)、固定部(3b)与凹槽(1a)形成了密闭的容腔。
  7. 一种环境传感器的制造方法，其特征在于，包括以下步骤；
    a)在基材(1)的上端面刻蚀出凹槽(1a)，并在基材(1)的上端面、凹槽(1a)的内壁上沉积第一牺牲层(2)；
    b)在第一牺牲层(2)的上方沉积敏感膜层(3)，该敏感膜层(3) 包括位于基材(1)端面上的固定部(3b)，以及伸入至凹槽(1a)内的弯曲部(3a)；
    c)对位于基材(1)端面上的敏感膜层(3)进行刻蚀，形成镂空(3c)；
    d)通过该镂空(3c)至少将位于弯曲部(3a)与凹槽(1a)侧壁之间的第一牺牲层(2)腐蚀掉；
    e)在所述敏感膜层(3)的上方沉积第二牺牲层(4)，且该第二牺牲层(4)将所述镂空(3c)密封；
    f)将位于弯曲部(3a)上方位置的第二牺牲层(4)腐蚀掉。
  8. 根据权利要求7所述的制造方法，其特征在于：在步骤e)与步骤f)之间，还包括以下步骤：对第二牺牲层(4)上位于镂空(3c)两侧的位置进行刻蚀以形成侧壁槽(4a)，并在第二牺牲层(4)的上端沉积保护层(5)，该保护层(5)同时填充在侧壁槽(4a)内。
  9. 根据权利要求7所述的制造方法，其特征在于：所述步骤(d)中将弯曲部(3a)与凹槽(1a)之间的第一牺牲层(2)完全腐蚀掉，使弯曲部(3a)悬空在凹槽(1a)内。
  10. 根据权利要求7所述的制造方法，其特征在于：所述步骤a)中在沉积第一牺牲层(2)之前，还包括在凹槽(1a)的内壁上依次沉积第三牺牲层(7)、固定膜层(8)的步骤。
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Publication number Priority date Publication date Assignee Title
CN105307092B (zh) * 2015-12-04 2018-03-23 歌尔股份有限公司 Mems麦克风、环境传感器的集成结构及制造方法
CN110507289A (zh) * 2019-08-30 2019-11-29 青岛歌尔微电子研究院有限公司 传感器组件和可穿戴设备
CN116429299B (zh) * 2023-06-12 2023-09-22 之江实验室 一种可晶圆系统集成的压力传感芯片制造方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010020320A1 (en) * 1998-03-10 2001-09-13 Mcintosh Robert B. Method to construct variable-area capacitive transducers
JP2012195442A (ja) * 2011-03-16 2012-10-11 Denso Corp 半導体センサ、及び、その製造方法
CN102955045A (zh) * 2011-08-17 2013-03-06 精工爱普生株式会社 物理量传感器及电子设备
US20140057444A1 (en) * 2010-01-27 2014-02-27 Seiko Epson Corporation Method for manufacturing mems device, method for manufacturing thermal detector, thermal detector, thermal detection device, and electronic instrument
CN104897334A (zh) * 2015-06-29 2015-09-09 歌尔声学股份有限公司 一种mems压力传感元件
CN105036054A (zh) * 2015-05-29 2015-11-11 歌尔声学股份有限公司 一种mems压力传感器及其制造方法
CN205175427U (zh) * 2015-12-04 2016-04-20 歌尔声学股份有限公司 一种环境传感器

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100365798C (zh) * 2003-06-20 2008-01-30 皇家飞利浦电子股份有限公司 电子器件、组件及制造电子器件的方法
KR101086520B1 (ko) 2003-06-20 2011-11-23 엔엑스피 비 브이 전자 장치, 조립체 및 전자 장치 제조 방법
DE102007009383A1 (de) 2007-02-20 2008-08-21 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Halbleiteranordnung und Verfahren zu deren Herstellung
CN101183690B (zh) * 2007-12-13 2012-10-10 上海集成电路研发中心有限公司 一种红外探测器及其制造方法
JP2013057616A (ja) * 2011-09-09 2013-03-28 Azbil Corp 環境センサ
JP6393930B2 (ja) * 2012-01-30 2018-09-26 俊 保坂 半導体センサー・デバイスおよびその製造方法
CN202770456U (zh) * 2012-08-21 2013-03-06 江苏物联网研究发展中心 Mems薄膜电容式多参数传感器结构
CN103508412B (zh) * 2013-09-11 2015-11-25 上海丽恒光微电子科技有限公司 压力传感器芯片的封装方法及压力传感器

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010020320A1 (en) * 1998-03-10 2001-09-13 Mcintosh Robert B. Method to construct variable-area capacitive transducers
US20140057444A1 (en) * 2010-01-27 2014-02-27 Seiko Epson Corporation Method for manufacturing mems device, method for manufacturing thermal detector, thermal detector, thermal detection device, and electronic instrument
JP2012195442A (ja) * 2011-03-16 2012-10-11 Denso Corp 半導体センサ、及び、その製造方法
CN102955045A (zh) * 2011-08-17 2013-03-06 精工爱普生株式会社 物理量传感器及电子设备
CN105036054A (zh) * 2015-05-29 2015-11-11 歌尔声学股份有限公司 一种mems压力传感器及其制造方法
CN104897334A (zh) * 2015-06-29 2015-09-09 歌尔声学股份有限公司 一种mems压力传感元件
CN205175427U (zh) * 2015-12-04 2016-04-20 歌尔声学股份有限公司 一种环境传感器

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