WO2017085063A1 - Filament à led, procédé de fabrication de filaments à led et lampe de conversion avec filament à led - Google Patents

Filament à led, procédé de fabrication de filaments à led et lampe de conversion avec filament à led Download PDF

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Publication number
WO2017085063A1
WO2017085063A1 PCT/EP2016/077743 EP2016077743W WO2017085063A1 WO 2017085063 A1 WO2017085063 A1 WO 2017085063A1 EP 2016077743 W EP2016077743 W EP 2016077743W WO 2017085063 A1 WO2017085063 A1 WO 2017085063A1
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WO
WIPO (PCT)
Prior art keywords
led
led chips
carrier element
led filament
contact point
Prior art date
Application number
PCT/EP2016/077743
Other languages
German (de)
English (en)
Inventor
Thomas Schlereth
Tamas Lamfalusi
Ivar TÅNGRING
Original Assignee
Osram Opto Semiconductors Gmbh
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Filing date
Publication date
Application filed by Osram Opto Semiconductors Gmbh filed Critical Osram Opto Semiconductors Gmbh
Publication of WO2017085063A1 publication Critical patent/WO2017085063A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/20—Light sources comprising attachment means
    • F21K9/23—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10007—Types of components
    • H05K2201/10106—Light emitting diode [LED]
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10007—Types of components
    • H05K2201/10113—Lamp
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/22—Secondary treatment of printed circuits
    • H05K3/28—Applying non-metallic protective coatings
    • H05K3/284—Applying non-metallic protective coatings for encapsulating mounted components

Definitions

  • LED filaments process for producing LED filaments and retrofit lamp with LED filament
  • LED filaments processes for the production of LED filaments and a retrofit lamp with a corresponding LED filament specified.
  • LED filaments are, for example, the following
  • An object of the present invention is to provide an LED filament with improved heat dissipation. Another task is to provide a simplified procedure for
  • an LED filament is included
  • Carrier element with a reflective first major surface.
  • On the reflective first main surface of the Carrier element is applied a plurality of LED chips in a row along a main extension direction of the support element.
  • the reflective first major surface is
  • Filament in operation gives the impression of a filament to an external observer.
  • the LED chips have an epitaxially grown
  • the electromagnetic radiation generated during operation of the LED chip emits the LED chip from a light exit surface.
  • the LED chips may, for example, be so-called volume emitters.
  • a volume-emitting LED chip has a substrate on which the semiconductor layer sequence has usually been grown epitaxially.
  • the substrate may for example comprise one of the following materials or consist of one of the following materials: sapphire,
  • Volume-emitting LED chips usually emit the radiation generated in the active zone not only via the light exit surface, but also via their side surfaces.
  • the LED chips can also be thin-film LED chips.
  • Thin-film LED chips have an epitaxially grown semiconductor layer sequence which is applied to a different carrier than the growth substrate for the semiconductor layer sequence. Particularly preferred is between the semiconductor layer sequence and the carrier a
  • Thin film LED chips typically do not emit the electromagnetic radiation generated in operation in the active zone beyond the wearer's side surfaces, but essentially do so
  • the LED chips of a row are electrically connected to one another in series and / or in parallel.
  • the LED chips can by means of
  • the LED chips are electrically connected in series with one another by front-side bonding wires.
  • the carrier element has a first electrical contact point on a first end region of the first main surface.
  • the front side of the directly adjacent LED chip is electrically conductively connected to the contact point with a bonding wire.
  • the first contact point is preferably insulated electrically against the carrier element.
  • the LED chips are embedded in a conversion element, the electromagnetic radiation of the first wavelength range in electromagnetic radiation of a second
  • Wavelength range is different.
  • the LED chips it is also possible for the LED chips to be embedded in a protective layer which is free of wavelength-converting properties and serves only for the protection of the LED chips and / or the mechanical stabilization of the LED filament.
  • the conversion element converts the
  • Conversion element passes unconverted.
  • the LED filament emits mixed-color radiation consisting of converted and unconverted radiation
  • the LED filament emits mixed colored radiation having a color location in the white area of the CIE standard color chart.
  • Volume emitting LED chips are preferably in one
  • the conversion element fills the areas between the LED chips completely.
  • the conversion element comprises a resin, in which phosphor particles are introduced, which are the
  • the resin may be a silicone or an epoxy or a mixture of these materials.
  • one of the following materials is suitable for the phosphor particles: rare earth doped garnets, rare earth doped alkaline earth sulfides, rare earth doped thiogallates, rare earth doped aluminates, rare earth doped silicates, rare earth doped orthosilicates, rare earths doped chlorosilicates, doped with rare earths Alkaline earth silicon nitrides doped with rare earths
  • Thin-film LED chips they may each have a separate conversion layer as a conversion element, which is placed on the light exit surface of each LED chip.
  • a further multiplicity of LED chips are applied in a row along the main extension direction of the carrier element on the first main surface of the carrier element.
  • the two rows are particularly preferably arranged parallel to one another along the main extension direction.
  • a second electrical contact point is particularly preferably arranged on the first end region of the first main surface.
  • the first electrical contact point and the second are
  • the second electrical contact point is also electrically insulated from the carrier element.
  • two directly adjacent rows of LED chips are completely serial interconnected with each other.
  • the external electrical contacting of the LED filament particularly preferably takes place via the first electrical contact point and the second electrical contact point on the first end region.
  • the two rows of LED chips can in turn be embedded in a common conversion element.
  • Light exit surface is provided with a separate conversion layer.
  • another plurality of LED chips are arranged in a row along the
  • both main surfaces of the carrier element are each equipped with at least one row of LED chips along the main extension direction.
  • Such an LED filament advantageously has two
  • Carrier element can be embedded in a common conversion element.
  • each LED chip is provided on its light exit surface with a separate conversion layer.
  • Carrier element in each case at least one row of LED chips, so in a second end region of the first
  • Main surface of the support member particularly preferably a second electrical contact point arranged, wherein the second end portion of the first main surface opposite to the first end portion.
  • a third electrical contact point is preferably applied on one end region of the second main surface of the carrier element.
  • the second electrical contact point and the first electrical contact point are arranged at a common end of the carrier element.
  • the second electrical contact point and the third electrical contact point are further provided by an electrically conductive element perpendicular to the
  • Main extension direction of the support member extends, electrically connected to each other.
  • the electrically conductive element runs along one
  • the electrically conductive element may be, for example, an electrodeposited metallic layer.
  • the electrically conductive element can also be produced by a dipping process.
  • the potting can be clear or reflective.
  • the potting compound comprises a silicone or an epoxide or a mixture of these two materials. If the potting formed reflective, so are preferred in introduced the otherwise clear potting titanium oxide particles.
  • this may have a clear envelope as the outermost layer.
  • this clear envelope silicone or is formed of silicone.
  • the clear coating serves both to protect the components of the LED filament and the mechanical stabilization of the LED filament.
  • the carrier element is provided with an electrical
  • Contacting layer is covered, which is separated by an electrically insulating layer of the support element.
  • the electrically insulating layer is applied in direct contact with the carrier element and the electrical contacting layer in direct contact with the electrically insulating layer.
  • the contacting layer preferably extends from the first main surface of the carrier element to the second main surface of the carrier element via a side surface of the carrier element. Particularly preferred here are the first main surface of the carrier element, the second main surface of the carrier element and the side surface of the carrier element continuous with the electrically insulating layer and the electrical
  • Insulating layer is an electrical contact via the front sides of the LED chips, for example by
  • Another LED filament also has a multiplicity of LED chips which emit electromagnetic radiation of a first wavelength range from a light exit surface and are arranged in a row along a main direction of extent.
  • the LED filament comprises a mechanically stabilizing material, which fills areas between the LED chips up to the light exit surfaces of the LED chips, so that the light exit surfaces of the LED chips and the mechanically stabilizing material form a first plane surface.
  • the mechanically stabilizing material may be clear or transparent.
  • the mechanically stabilizing material is a resin, such as a silicone or an epoxy. Titanium oxide particles which impart reflective properties to the mechanically stabilizing material can be introduced into the silicone or the epoxide.
  • the two end regions of the LED filament are each formed by the mechanically stabilizing material.
  • the LED filament is a mechanically stabilizing material
  • the LED filament is mechanically stabilized solely by the mechanically stabilizing material.
  • a first electrical contact point is arranged on a first end region of the first planar surface and a second electrical contact point electrical contact point arranged on a second end region of the first planar surface, wherein the first end region opposite to the second end region.
  • this LED filament can be a conversion element
  • Wavelength range of the LED chips converts into electromagnetic radiation of a second wavelength range.
  • the conversion element is preferably arranged on the first planar surface. For example, this extends
  • each individual LED chip with a conversion layer as
  • a carrier element having a first reflective main surface is applied on a second planar surface of the LED chip composite, which is opposite the first planar surface.
  • the reflective main surface particularly preferably points to the LED chip interconnection.
  • a further plurality of LED chips in a row along the
  • these LED chips are also arranged in an LED chip composite, in which the LED chips are connected to a mechanically stabilizing material, wherein the mechanically stabilizing material fills the areas between the LED chips preferably up to the light exit surfaces of the LED chips.
  • the carrier element comprises a metal substrate or is made of a
  • the first reflecting main surface of the carrier element is formed from silver or comprises silver.
  • the first reflecting main surface of the carrier element is formed from silver or comprises silver.
  • Support member formed of an aluminum substrate, which is provided on both major surfaces with a silver layer. It is also possible to use a pure aluminum substrate as
  • Carrier element to use Such a carrier element has an improved heat dissipation due to
  • the support element comprises glass or ceramic or is made of glass or
  • Carrier element is particularly preferably at least 95%.
  • the reflectivity of the first main surface or the second main surface of the carrier element is 98%.
  • particularly preferred is the above
  • carrier element for the LED filament with a particularly good thermal conductivity and very well reflecting major surfaces.
  • a carrier element is given for example by a silver-coated aluminum substrate.
  • the carrier element comprises cooling ribs. For example, this indicates
  • Carrier element has a base body with a rod-shaped
  • the fingers extend laterally out of the main body along the main extension direction of the carrier element at regular intervals.
  • cooling ribs are formed as fingers, which are arranged in bundles, wherein the fingers of a bundle radiate from a common base point away.
  • radially arranged fingers have a particularly good heat dissipation.
  • the cooling fins are preferably made of the same material as the main body.
  • the surface of the cooling fins is preferably also designed to be highly reflective. This also makes the cooling fins visually attractive.
  • the LED filament is formed twisted along a longitudinal axis.
  • the longitudinal axis in this case particularly preferably runs along the
  • Main extension direction of the support element This improves the radiation behavior of the LED filament.
  • the carrier element is rotated along the longitudinal axis in such a way that the first main surface and the second main surface of the carrier element rotate helically along the longitudinal axis are. In other words, the rotation preferably takes place about the longitudinal axis.
  • a plurality of LED chips are then applied to the first major surface of the carrier in a row along a main direction of extent of the carrier element.
  • At least one first electrical contact point is applied in one end region of the carrier element.
  • the LED chips particularly preferably in series, are electrically connected, for example by wire bonding.
  • the electrical contact point can, for example, by
  • Contact foil comprises, for example, a layer composite of a dielectric layer, a copper layer and a gold layer. Furthermore, the electrical contact point by a paste printing, such as screen printing or
  • Inkjet printing are generated.
  • This method is preferred as a batch process
  • a batch process offers the advantage of being able to generate several components in parallel. For example, in such a batch process directly adjacent rows on the carrier may be connected in series in parallel and the carrier may be singulated such that each LED filament is at least two on the first
  • a further plurality of LED chips are applied in a row along the main direction of extent to a second reflective main surface of the carrier element, wherein the second
  • Main surface of the first major surface opposite.
  • the LED chips are embedded in a wavelength-converting layer, which converts electromagnetic radiation of the first wavelength range, which is emitted by a light exit surface of the LED chips, into electromagnetic radiation of a second wavelength range.
  • the wavelength-converting layer can be produced for example by means of dispensing, molding or die-casting.
  • wavelength converting layer is laminated on a converter film. From the wavelength-converting
  • a subcarrier is provided on which a plurality of LED chips in a row along a
  • Main extension direction is applied.
  • the LED chips are then embedded in a mechanically stabilizing material.
  • a film may be applied to the light exit surfaces of the LED chips prior to the application of the mechanically stabilizing material, so that the areas between the LED chips are sealed by the auxiliary carrier on one side and by the film on the other side.
  • stabilizing material is then preferably introduced by means of spraying in the areas between the LED chips (Foil Assisted Molding). Before further processing, the film is removed again.
  • the auxiliary carrier is removed again. Then at least one electrical contact point is applied in an edge region of the LED chip composite. Finally, the LED chips are connected in series with each other, for example by means of
  • Wire bonding This method can also be carried out in a batch process in which a plurality of rows of LED chips are applied to the subcarrier and the LED chip group is singulated, so that a multiplicity of LED filaments is formed.
  • the resulting composite of interconnected LED chips which are mechanically stable connected by the mechanically stabilizing material, can already be used as an LED filament.
  • a carrier element or carrier having a plurality of carrier elements to be applied to the LED chip composite, wherein the carrier element or the carrier has a first reflective main area.
  • the LED Chip composite is in this case particularly preferably on the first reflective main surface of the support element or the
  • the carrier element has at least one LED chip composite on its two main surfaces, the opposing contact points at one end of the
  • Carrier element with an electrically conductive element Carrier element with an electrically conductive element
  • the LED chips are connected in series on the first main surface of the support member with the LED chips on the second main surface of the support member.
  • the LED filaments described herein are particularly suitable for use as a light source in a retrofit lamp. Particularly preferably, the LED filaments in
  • the retrofit lamp preferably comprises a piston which has the shape of the bulb of an incandescent lamp.
  • the piston is usually mounted in a socket that is threaded
  • the LED filament is connected with its carrier element to the base heat-conducting. This improves the heat dissipation of the LED filament during operation of the retrofit lamp.
  • the piston is filled with a gas, for example with air or helium, in order to further improve the heat removal from the LED filament.
  • FIG. 10 shows a schematic sectional representation of an LED filament according to one exemplary embodiment.
  • FIG. 21 shows a schematic sectional illustration of an LED filament according to a further exemplary embodiment.
  • FIG. 22 schematically shows an exemplary embodiment of a retrofit lamp with LED filaments in accordance with FIG. 22
  • FIG. 29 shows a schematic sectional illustration of a finished LED filament.
  • a further method for producing an LED filament will be described in more detail with reference to the schematic sectional views of FIGS. 31 to 42.
  • FIG. 42 schematically shows a finished LED filament according to a further exemplary embodiment.
  • FIG. 43 shows schematically another embodiment of a retrofit lamp with an LED filament in accordance with FIG. 43
  • FIG. 44 shows a schematic plan view of a carrier with a multiplicity of carrier elements according to FIG. 44
  • Embodiment. A further exemplary embodiment of a method for producing LED filaments will be described with reference to the schematic representations of FIGS. 45 to 52.
  • Figures 53 and 54 show schematic representations of the finished LED filament.
  • a further exemplary embodiment of a method for producing LED filaments will be described with reference to the schematic representations of FIGS. 55 to 58.
  • Figures 59 to 61 show schematic representations of the finished LED filament.
  • Figure 62 shows a schematic plan view of a carrier with a plurality of carrier elements according to a further embodiment.
  • Figures 63 and 64 show schematic representations of an LED filament according to another embodiment.
  • Carrier elements 2 provided (schematic plan view of Figure 2). Along a main extension direction 3 of each carrier element 2, a multiplicity of LED chips 4 are applied in a row to a first highly reflective main surface 5 of the carrier 1.
  • the LED chips 4 are in the present case
  • Semiconductor layer sequence 7 is epitaxially grown with an active zone.
  • the active zone generates during operation
  • the carrier 1 has an aluminum substrate which has a highly reflective surface on both main surfaces
  • Silver layer is provided (not shown).
  • a first electrical contact layer 8 and a second electrical contact layer 9 are applied to edge regions of the carrier elements 2.
  • electrical contact layer 8 forms after separation of the
  • Carrier elements 2 each have a first electrical contact point 10 and the second electrical contact layer 9, a second electrical contact point 11 from.
  • Contact points 10, 11 are electrically insulated from the carrier element 2 by a dielectric layer.
  • the LED chips 4 of a row are electrically connected in series along the main extension direction 3 of a carrier element 2, in the present case by means of
  • a wavelength-converting layer 13 is applied by compression molding over the LED chips 4 (FIGS. 7 and 8).
  • the wavelength-converting layer 13 is formed, for example, from a resin such as silicone or epoxy, are incorporated in the phosphor particles.
  • the carrier 1 is separated, so that a multiplicity of individual LED filaments 14 are produced (FIG. 9).
  • FIG. 10 shows a schematic sectional illustration of an LED filament 14, as can be produced by the method according to FIGS. 1 to 9.
  • the LED filament 14 according to the exemplary embodiment of FIG. 10 has a carrier element 2 with a highly reflective first main surface 5, on which a multiplicity of LED chips 4 are applied in a row along a main extension direction 3 of the carrier element.
  • the LED chips 4 are
  • Main surface 5 is here a first electrical
  • Pad 10 is applied, which is electrically connected by means of a bonding wire 12 with the directly adjacent LED chip 4.
  • a second contact point 11 is applied, which is also electrically connected to a bonding wire 12 with the directly adjacent LED chip 4.
  • Embodiment of Figure 10 are embedded in a common conversion element 17, the radiation of the LED chips 4 from the first wavelength range partially in
  • Radiation of a second wavelength range converts.
  • the first wavelength range preferably consists of blue
  • FIG. 11 shows a schematic representation of a retrofit lamp with a plurality of LED filaments 14 according to the
  • Embodiment of Figure 9 as a light source.
  • the retrofit lamp preferably has four LED filaments 14.
  • the retrofit lamp in this case comprises a piston 18, which has the shape of a bulb of a light bulb.
  • the piston 18 is fixed in a socket 19 with a thread corresponding to the thread of an incandescent lamp.
  • the LED filaments 14 are mounted upright in the base 19.
  • the carrier element 2 of the LED filaments 14 is thermally conductively connected to the base 19.
  • the LED filament 14 on the PCB 20 is then inserted into the base 19 of the retrofit lamp.
  • the LED filaments 14 according to FIG. 9 radiate in this case
  • the LED filaments 14 are positioned in the bulb 18 of the retrofit lamp such that the main radiating surfaces of the LED filaments 14 face outward. Furthermore, the LED filaments 14 are positioned in the bulb 18 of the retrofit lamp such that the main radiating surfaces of the LED filaments 14 face outward. Furthermore, the LED filaments 14 are positioned in the bulb 18 of the retrofit lamp such that the main radiating surfaces of the LED filaments 14 face outward. Furthermore, the LED filaments 14 are positioned in the bulb 18 of the retrofit lamp such that the main radiating surfaces of the LED filaments 14 face outward. Furthermore, the LED filaments 14 are positioned in the bulb 18 of the retrofit lamp such that the main radiating surfaces of the LED filaments 14 face outward. Furthermore, the LED filaments 14 are positioned in the bulb 18 of the retrofit lamp such that the main radiating surfaces of the LED filaments 14 face outward. Furthermore, the LED filaments 14 are positioned in the bulb 18 of the retrofit lamp such that the main radiating surfaces of the LED filaments 14 face outward. Furthermore, the
  • Carrier element 2 of the carrier 1 more, preferably two,
  • LED chips 4 set.
  • the LED chips 4 are here each aligned in rows along a main extension direction 3 of the support member 2 ( Figures 12 and 13).
  • a structured contact layer 21 is applied to edge regions of the carrier 1, from which later by separation of the carrier 1 electrically conductive
  • Wavelength-converting layer 13 embedded ( Figures 18 and 19). Finally, the LED filaments 14 are singulated ( Figure 20).
  • Figure 21 shows a schematic plan view of a
  • Embodiment of a finished LED filament 14 as it can be produced by the method according to the embodiment of Figures 12 to 20.
  • this LED filament 14 are different from the LED filament 14 according to the
  • Embodiment of Figure 10 two mutually parallel rows of LED chips 4 along a
  • Main extension direction 3 of the support member 2 on a highly reflective first major surface 5 of the support member 2 is arranged.
  • the LED chips 4 of the LED filament 14 are connected in series by bonding wires 12.
  • In a first end region 15 of the first main surface 5 of the carrier element 2 are two electrically conductive contact points 10, 11th
  • FIG. 22 shows a schematic representation of a retrofit lamp with a plurality, preferably four, LED filaments 14, as already described with reference to FIG. These LED filaments 14 are for insertion into the
  • each carrier element 2 is provided with a series of serially interconnected LED chips 4 on a first main surface 5 and a second row of LED chips 4, which are also connected in series ( Figure 27).
  • the LED chips 4 on the first main surface 5 are in this case compared to the LED chips 4 on the second
  • the electrically conductive element 24 runs perpendicular to the main extension direction 3 of the LED filament.
  • the electrically conductive element 24th it may, for example, be an electrodeposited layer.
  • the second contact point 11, a third contact point 25 and the electrically conductive element 24 are embedded in a common encapsulation 26.
  • the potting 26 is particularly preferably formed diffusely reflective.
  • the potting 26 is a silicone with titanium oxide particles.
  • the finished LED filament 14 is provided on its outer side with a clear envelope 27, for example made of silicone.
  • the clear envelope 27 is on both the
  • a plurality of LED chips 4 are placed on a subcarrier 28, for example a foil, in a row along a main extension direction 3 (FIG. 31).
  • a further film 30 is applied to light exit surfaces 29 of the LED chips 4, so that the areas between the individual LED chips 4 are sealed (FIG. 32).
  • the LED chips 4 with a mechanical
  • the mechanically stabilizing material 31 is particularly preferably highly reflective or else
  • the mechanical stabilizing material 31 for example, a silicone or an epoxy. If the mechanically stabilizing material 31 is intended to be reflective, then it preferably contains
  • Titanium oxide particles are used.
  • the mechanically stabilizing material 31 completely fills the gaps between the LED chips 4 up to the light exit surfaces 29.
  • the mechanically stabilizing material 31 and the light exit surfaces 29 of the LED chips 4 form a continuous first planar surface.
  • laterally of the outermost LED chip 4 also mechanically stabilizing material 31 is also arranged.
  • Embodiment of Figure 35 can be used as LED filament 14.
  • a conversion element 17 is applied to the first continuous plane surface.
  • the conversion element 17 extends in this case starting from the first Contact point 10 over all light exit surfaces 29 of the LED chips 4 to the second contact point 11th
  • Main surface 5 is applied, which particularly preferably has a metal core, for example made of aluminum, which is provided on both sides with a silver layer ( Figure 37).
  • a further LED chip composite is applied to the second main surface 22 of the carrier element 2, the latter of which is applied to the second main surface 22 of the carrier element 2
  • the method just described can also be carried out as a batch process.
  • a batch process a plurality of LED filaments 14 are produced in a common bond, which is finally singulated.
  • Figure 43 shows a schematic representation of a
  • Retrofit lamp with an LED filament 14 on a PCB 20 according to the figure 42. Since the LED filament 14 in this case has two main emission directions, it is sufficient to use a single LED filament 14 as the light source.
  • FIG. 44 shows a schematic plan view of a carrier
  • the support elements 1 with a plurality of support elements 2.
  • the support elements 1 with a plurality of support elements 2.
  • each carrier element 2 has a multiplicity of cooling ribs 33, which extend laterally out of the main body 32.
  • the cooling fins 33 are formed as fingers, wherein a plurality of fingers are always arranged in a bundle and
  • FIG. 45 shows a side view of the carrier element 2 of FIG.
  • Bonding wires 12 connected in series with each other and electrically connected to the first contact point 10 and the second contact point 11 ( Figure 49).
  • the LED chips 4 are embedded on the first main surface 5 of the carrier element 2 and on the second main surface 22 of the carrier element 2 in a common conversion element 17 (FIGS. 51, 52 and 53).
  • the first electrical contact point 10 and the second electrical contact point 11 protrude laterally out of the conversion element 17.
  • FIG. 54 shows a schematic perspective illustration of a finished LED filament 14, as with the method according to the exemplary embodiment of FIGS. 45 to 53
  • the LED filament 14 according to the embodiment of FIG. 54 has a carrier element 2 with a rod-shaped one
  • Main body 32 on the first main surface 5 a
  • Row of LED chips 4 along a main extension direction 3 of the body 32 is applied to.
  • the first Main surface 5 is opposite, is also a plurality of LED chips 4 in a row along a
  • Main extension direction 3 of the main body 32 is arranged. Laterally from the support member 2 extend fingers, which serve as cooling fins 33. The fingers are from the same
  • the fingers are further arranged in bundles, which have a common
  • the LED chips 4 of the LED filament 14 according to FIG. 54 are encased in a common conversion element 17, the radiation of the LED chips 4 from a first
  • Wavelength range partially converts radiation of a second wavelength range.
  • Carrier element 2 which has already been described with reference to Figure 45, the carrier element 2 according to Figure 55 in its main body 32 individual chip areas, which by
  • an LED chip 4 is then applied to each chip area.
  • the LED chips 4 are electrically connected in series with one another by bonding wires 12 and electrically conductively connected to contact points 10, 11 which are arranged on a first end region 15 of the carrier element 2 and on a second end region 16 of the carrier element 2. These steps will be on the second main surface 22 of the support member 2 is repeated, so that a plurality of LED chips 4 is applied to both main surfaces 5, 22.
  • the carrier element 2 is rotated along its longitudinal axis 1 (FIG. 57).
  • the LED chips 4 are embedded in a conversion element 17 (FIG. 58).
  • FIGs 59 to 61 show schematic representations of the LED filament 14, as can be prepared for example with the method according to Figures 55 to 58.
  • the LED filament 14 has a carrier element 2, on the first main surface 5 and on the second main surface 22 of which a multiplicity of LED chips 14 are applied in a row along a main extension direction 3 of the carrier element 2. Laterally extend as fingers
  • the LED filament 14 has a conversion element 17 into which
  • Conversion element 17 is cylindrical in this case and surrounds the rod-shaped base body 32 except for the
  • Conversion element 17 the first electrical contact point 10 and the second electrical contact point 11 extend.
  • Figure 62 shows a schematic plan view of a carrier 1 with a plurality of support elements 2 according to a another embodiment. In contrast to the carrier element 2 according to FIG. 45, the carrier elements 2
  • Cooling ribs 33 which are formed as fingers and extend at regular intervals from a rod-shaped base body 32 of the support member 2 out.
  • the cooling fins 33 are regularly spaced and extend perpendicular to a longitudinal axis L of the base body 32.
  • FIGS 63 and 64 show schematic representations of an LED filament 14 with a support member 2 of the carrier 1 according to the embodiment of Figure 62.
  • the LED filament 14 differs from the LED filament 4 according to the
  • Figures 59 to 61 in particular by the support member 2 and further in that the support member 2 is not rotated about its longitudinal axis L.
  • FIG. 66 shows detail A of FIG. 65 in a detail view
  • FIG. 67 shows detail B from FIG. 65 in a detail view
  • Embodiment of Figures 65 to 67 has a

Abstract

L'invention concerne un filament à LED (14) comprenant un élément porteur (2) pourvu d'une première surface principale (5) réfléchissante, sur laquelle une pluralité de puces de LED (4) sont disposées en une rangée le long d'une direction de projection principale (3), et d'un premier point de contact électrique (10) sur une première zone d'extrémité (15) de la première surface principale (5) de l'élément porteur (2). Les puces de LED (4) sont ici branchées électriquement en série. L'invention concerne également un filament à LED supplémentaire, deux procédés de fabrication d'un filament à LED ainsi qu'une lampe de conversion dotée d'un filament à LED.
PCT/EP2016/077743 2015-11-19 2016-11-15 Filament à led, procédé de fabrication de filaments à led et lampe de conversion avec filament à led WO2017085063A1 (fr)

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DE102015120085.6 2015-11-19
DE102015120085.6A DE102015120085A1 (de) 2015-11-19 2015-11-19 LED-Filamente, Verfahren zur Herstellung von LED-Filamenten und Retrofitlampe mit LED-Filament

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US11421827B2 (en) 2015-06-19 2022-08-23 Zhejiang Super Lighting Electric Appliance Co., Ltd LED filament and LED light bulb
US11525547B2 (en) 2014-09-28 2022-12-13 Zhejiang Super Lighting Electric Appliance Co., Ltd LED light bulb with curved filament
US11543083B2 (en) 2014-09-28 2023-01-03 Zhejiang Super Lighting Electric Appliance Co., Ltd LED filament and LED light bulb
US11629825B2 (en) 2014-09-28 2023-04-18 Zhejiang Super Lighting Electric Appliance Co., Lt LED light bulb with curved filament
US11690148B2 (en) 2014-09-28 2023-06-27 Zhejiang Super Lighting Electric Appliance Co., Ltd. LED filament and LED light bulb
US11686436B2 (en) 2014-09-28 2023-06-27 Zhejiang Super Lighting Electric Appliance Co., Ltd LED filament and light bulb using LED filament
US11892127B2 (en) 2014-09-28 2024-02-06 Zhejiang Super Lighting Electric Appliance Co., Ltd LED filament and LED bulb lamp

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CN108826032B (zh) * 2018-07-23 2024-02-09 杭州思隽思科技有限公司 一种新型led灯丝
EP4278126A1 (fr) 2021-01-14 2023-11-22 Signify Holding B.V. Bande de del comprenant une ligne continue de filaments de del

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US11690148B2 (en) 2014-09-28 2023-06-27 Zhejiang Super Lighting Electric Appliance Co., Ltd. LED filament and LED light bulb
US11686436B2 (en) 2014-09-28 2023-06-27 Zhejiang Super Lighting Electric Appliance Co., Ltd LED filament and light bulb using LED filament
US11892127B2 (en) 2014-09-28 2024-02-06 Zhejiang Super Lighting Electric Appliance Co., Ltd LED filament and LED bulb lamp
US11421827B2 (en) 2015-06-19 2022-08-23 Zhejiang Super Lighting Electric Appliance Co., Ltd LED filament and LED light bulb

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