WO2017084148A1 - Coa型阵列基板的制备方法及coa型阵列基板 - Google Patents

Coa型阵列基板的制备方法及coa型阵列基板 Download PDF

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WO2017084148A1
WO2017084148A1 PCT/CN2015/098504 CN2015098504W WO2017084148A1 WO 2017084148 A1 WO2017084148 A1 WO 2017084148A1 CN 2015098504 W CN2015098504 W CN 2015098504W WO 2017084148 A1 WO2017084148 A1 WO 2017084148A1
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邓炜佳
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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    • G—PHYSICS
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    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/1303—Apparatus specially adapted to the manufacture of LCDs
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133514—Colour filters
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133514—Colour filters
    • G02F1/133516—Methods for their manufacture, e.g. printing, electro-deposition or photolithography
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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    • G02F1/1343—Electrodes
    • G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
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    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133614—Illuminating devices using photoluminescence, e.g. phosphors illuminated by UV or blue light
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    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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    • G02F1/134345—Subdivided pixels, e.g. for grey scale or redundancy
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
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    • G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
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    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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    • G02F1/136222—Colour filters incorporated in the active matrix substrate
    • G—PHYSICS
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    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
    • G02F2201/123—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode pixel
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/10—Materials and properties semiconductor
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/36—Micro- or nanomaterials

Definitions

  • the present invention relates to the field of display technologies, and in particular, to a method for fabricating a COA type array substrate and a COA type array substrate.
  • Quantum Dots are usually spherical or spheroidal semiconductor nanoparticles composed of II-VI or III-V elements, and the particle size is generally between several nanometers and several tens of nanometers. Since the particle size of the quantum dot is smaller or closer to the exciton Boolean radius of the corresponding bulk material, a quantum confinement effect is generated, and the energy level structure changes from the quasi-continuous structure of the bulk material to the discrete structure of the quantum dot material, resulting in quantum dot display. The performance of special stimulated radiation.
  • the band gap of the energy level increases, and the energy required for the corresponding quantum dot to be stimulated and the energy released by the quantum dot to return to the ground state are correspondingly increased, which is manifested by the excitation of the quantum dot.
  • the luminescence spectrum can cover the entire visible region. For example, the size of cadmium selenide (CdSe) is reduced from 6.6 nm to 2.0 nm, and its emission wavelength is "blue shifted" from the red light region 635 nm to 460 nm in the blue light region.
  • CdSe cadmium selenide
  • the quantum dot material has the advantages of concentrated luminescence spectrum, high color purity, and easy adjustment of the luminescent color by the size, structure or composition of the quantum dot material, and is applied to the display device to effectively improve the color gamut of the display device. And color reproduction capabilities.
  • TFT-LCD Thin Film Transistor Liquid Crystal Display
  • the use of quantum dots instead of traditional color photoresists can greatly increase the color gamut and transmittance of TFT-LCDs, resulting in better display.
  • quantum dot composite resin to make photoresist, and then used to fabricate quantum dot color film, has the following problems:
  • COA Color Filter on Array
  • COA Color Filter on Array
  • the display panel of the COA structure does not have the alignment problem between the color filter substrate and the array substrate, the difficulty of the process of the box in the preparation process of the display panel can be reduced, and the error in the box can be avoided, so the black matrix can be designed as a narrow line width. Increases the aperture ratio.
  • An object of the present invention is to provide a method for preparing a COA type array substrate, which forms a quantum dot color filter film including a red, green, and blue filter layer on a TFT substrate by an electrochemical deposition method, and an existing quantum Compared with the preparation method of the point color filter film, the quantum dot usage is saved, the cost is low, and the environment is protected.
  • the object of the present invention is to provide a COA type array substrate, which is formed on the side of the array substrate, and has a good color display effect, which can avoid the alignment problem between the conventional CF substrate and the TFT substrate, and reduce the preparation of the display panel.
  • the difficulty of the box process is increased, and the pixel aperture ratio is increased.
  • the present invention provides a method for preparing a COA type array substrate, comprising the following steps:
  • Step 1 providing a TFT substrate, the TFT substrate comprising a base substrate, a TFT layer disposed on the base substrate, and a pixel electrode layer disposed on the TFT layer, wherein the pixel electrode layer includes a number of intervals a red sub-pixel electrode, a plurality of green sub-pixel electrodes, and a plurality of blue sub-pixel electrodes;
  • Step 2 providing a counter electrode, a first electrolyte, a second electrolyte, and a third electrolyte;
  • the counter electrode includes an insulating substrate, and a plurality of counter electrode units disposed on the insulating substrate, the plurality of The pair of electrode units are respectively disposed corresponding to the plurality of red, green and blue sub-pixel electrodes on the TFT substrate;
  • the first electrolyte is a mixed weakly acidic solution containing red quantum dots and chitosan
  • the second The electrolyte is a mixed weakly acidic solution comprising green quantum dots and chitosan
  • the third electrolyte being a mixed weakly acidic solution comprising scattering particles and chitosan;
  • Step 3 immersing the counter electrode and the TFT substrate in the first electrolyte, using a wire, a red sub-pixel electrode on the TFT substrate and a counter electrode corresponding to the red sub-pixel electrode on the counter electrode Forming a connection circuit between the TFT substrate as a negative electrode and the counter electrode as a positive electrode.
  • the pH of the first electrolyte near the red sub-pixel electrode on the TFT substrate is raised to make the first electrolyte
  • the chitosan is deposited on the red sub-pixel electrode, and the chitosan drives the red quantum dots to be deposited on the red sub-pixel electrode, thereby forming a plurality of red filter layers on the plurality of red sub-pixel electrodes respectively;
  • the chemical deposition time after the thickness of the red filter layer reaches a certain value, the power is turned off, and the TFT substrate and the counter electrode are taken out and performed.
  • Step 4 immersing the TFT substrate and the counter electrode into the second electrolyte, using a wire, a power source, a green sub-pixel electrode on the TFT substrate, and a counter electrode unit corresponding to the green sub-pixel electrode on the counter electrode A connection circuit is formed between the TFT substrate as a negative electrode and the counter electrode as a positive electrode.
  • the pH of the second electrolyte near the green sub-pixel electrode on the TFT substrate is increased, so that the second electrolyte
  • the chitosan is deposited on the green sub-pixel electrode, and the chitosan drives the green quantum dots on the green sub-pixel electrode to form a plurality of green filter layers on the plurality of green sub-pixel electrodes respectively;
  • the chemical deposition time after the thickness of the green filter layer reaches a certain value, the power is turned off, and the TFT substrate and the counter electrode are taken out and cleaned;
  • Step 5 immersing the TFT substrate and the counter electrode into the third electrolyte solution, and using the wire and the power source to correspond to the blue sub-pixel electrode on the plurality of blue sub-pixel electrodes and the counter electrode on the TFT substrate a connection circuit is formed between the pair of electrode units, the TFT substrate serves as a negative electrode, and the counter electrode serves as a positive electrode. After the current is applied, the pH of the third electrolyte near the blue sub-pixel electrode on the TFT substrate increases.
  • the chitosan in the third electrolyte is deposited on the blue sub-pixel electrode, and the chitosan-driven scattering particles are deposited on the blue sub-pixel electrode to form a plurality of blue on the plurality of blue sub-pixel electrodes a color filter layer; controlling the electrochemical deposition time, after the thickness of the blue filter layer reaches a certain value, the power is turned off, the substrate and the counter electrode are taken out, and the cleaning is performed;
  • the step 3, the step 4, and the step 5 may be performed in any order; after the step 3-5, a plurality of red filter layers, a plurality of green filter layers, and A plurality of blue filter color quantum dot color filter films are used to produce a COA type array substrate.
  • the mass fraction of chitosan in the first electrolyte solution, the second electrolyte solution, and the third electrolyte solution is 0.001% to 10%; the red quantum dots in the first electrolyte solution, and the second electrolyte solution
  • the concentration of the green quantum dots is 10 -6 M to 1 M; the concentration of the scattering particles in the third electrolyte is 10 -6 M to 1 M; the first electrolyte, the second electrolyte, and the third electrolyte
  • the pH is from 2.0 to 7.0.
  • the mass fraction of chitosan in the first electrolyte solution, the second electrolyte solution, and the third electrolyte solution is 1%; the red quantum dots in the first electrolyte solution, and the green quantum dots in the second electrolyte solution
  • the concentration of the scattering particles is 0.5 mM; the concentration of the scattering particles in the third electrolyte is 0.5 mM; and the pH of the first electrolyte, the second electrolyte, and the third electrolyte is 5.2.
  • the red quantum dots, the green quantum dots, and the scattering particles have a particle diameter of 2 nm to 10 nm.
  • the red quantum dots are ZnS-coated InP quantum dots; the green quantum dots are ZnS-coated InAs quantum dots; and the scattering particles are white, blue, or transparent particles.
  • a voltage applied between the red/green/blue sub-pixel electrode on the TFT substrate and the corresponding counter electrode unit on the counter electrode is 0.01 V to 30 V, and the power-on time is 0.01 s to 1h.
  • a voltage applied between the red/green/blue sub-pixel electrode on the TFT substrate and the corresponding counter electrode unit on the counter electrode is 2V, and the energization time should be 150s.
  • the material of the counter electrode unit is indium tin oxide, aluminum-doped zinc oxide, nickel, stainless steel, silver, gold or platinum.
  • the material of the counter electrode unit is gold or platinum.
  • the present invention also provides a COA type array substrate comprising a base substrate, a TFT layer disposed on the base substrate, a pixel electrode layer and a black matrix disposed on the TFT layer, and quantum dots disposed on the pixel electrode layer Color filter film;
  • the pixel electrode layer includes a plurality of red sub-pixel electrodes, a plurality of green sub-pixel electrodes, and a plurality of blue sub-pixel electrodes disposed at intervals;
  • the quantum dot color filter film includes a plurality of red, green, and blue colors, respectively a plurality of red, green, and blue filter layers corresponding to the color sub-pixel electrodes;
  • the material of the red filter layer is a mixture of red quantum dots and chitosan
  • the material of the green filter layer is a mixture of green quantum dots and chitosan
  • the material of the blue filter layer is A mixture of scattering particles and chitosan.
  • the invention also provides a preparation method of a COA type array substrate, comprising the following steps:
  • Step 1 providing a TFT substrate, the TFT substrate comprising a base substrate, a TFT layer disposed on the base substrate, and a pixel electrode layer disposed on the TFT layer, wherein the pixel electrode layer includes a number of intervals a red sub-pixel electrode, a plurality of green sub-pixel electrodes, and a plurality of blue sub-pixel electrodes;
  • Step 2 providing a counter electrode, a first electrolyte, a second electrolyte, and a third electrolyte;
  • the counter electrode includes an insulating substrate, and a plurality of counter electrode units disposed on the insulating substrate, the plurality of The pair of electrode units are respectively disposed corresponding to the plurality of red, green and blue sub-pixel electrodes on the TFT substrate;
  • the first electrolyte is a mixed weakly acidic solution containing red quantum dots and chitosan
  • the second The electrolyte is a mixed weakly acidic solution comprising green quantum dots and chitosan
  • the third electrolyte being a mixed weakly acidic solution comprising scattering particles and chitosan;
  • Step 3 immersing the counter electrode and the TFT substrate in the first electrolyte, using a wire, a red sub-pixel electrode on the TFT substrate and a counter electrode corresponding to the red sub-pixel electrode on the counter electrode Forming a connection circuit between the TFT substrate as a negative electrode and the counter electrode as a positive electrode.
  • the pH of the first electrolyte near the red sub-pixel electrode on the TFT substrate is raised to make the first electrolyte
  • the chitosan is deposited on the red sub-pixel electrode, and the chitosan drives the red quantum dots to be deposited on the red sub-pixel electrode, thereby forming a plurality of red filter layers on the plurality of red sub-pixel electrodes respectively; Chemical deposition time, to be described After the thickness of the red filter layer reaches a certain value, the power is turned off, and the TFT substrate and the counter electrode are taken out and cleaned;
  • Step 4 immersing the TFT substrate and the counter electrode into the second electrolyte, using a wire, a power source, a green sub-pixel electrode on the TFT substrate, and a counter electrode unit corresponding to the green sub-pixel electrode on the counter electrode A connection circuit is formed between the TFT substrate as a negative electrode and the counter electrode as a positive electrode.
  • the pH of the second electrolyte near the green sub-pixel electrode on the TFT substrate is increased, so that the second electrolyte
  • the chitosan is deposited on the green sub-pixel electrode, and the chitosan drives the green quantum dots on the green sub-pixel electrode to form a plurality of green filter layers on the plurality of green sub-pixel electrodes respectively;
  • the chemical deposition time after the thickness of the green filter layer reaches a certain value, the power is turned off, and the TFT substrate and the counter electrode are taken out and cleaned;
  • Step 5 immersing the TFT substrate and the counter electrode into the third electrolyte solution, and using the wire and the power source to correspond to the blue sub-pixel electrode on the plurality of blue sub-pixel electrodes and the counter electrode on the TFT substrate a connection circuit is formed between the pair of electrode units, the TFT substrate serves as a negative electrode, and the counter electrode serves as a positive electrode. After the current is applied, the pH of the third electrolyte near the blue sub-pixel electrode on the TFT substrate increases.
  • the chitosan in the third electrolyte is deposited on the blue sub-pixel electrode, and the chitosan-driven scattering particles are deposited on the blue sub-pixel electrode to form a plurality of blue on the plurality of blue sub-pixel electrodes a color filter layer; controlling the electrochemical deposition time, after the thickness of the blue filter layer reaches a certain value, the power is turned off, the substrate and the counter electrode are taken out, and the cleaning is performed;
  • the step 3, the step 4, and the step 5 may be performed in any order; after the step 3-5, a plurality of red filter layers, a plurality of green filter layers, and a plurality of blue filter color quantum dot color filter films to obtain a COA type array substrate;
  • the mass fraction of chitosan in the first electrolyte solution, the second electrolyte solution, and the third electrolyte solution is 0.001% to 10%; the red quantum dots in the first electrolyte solution, and the second electrolysis
  • the concentration of the green quantum dots in the liquid is 10 -6 M to 1 M; the concentration of the scattering particles in the third electrolyte is 10 -6 M to 1 M; the first electrolyte, the second electrolyte, and the third electrolysis
  • the pH of the liquid is 2.0 to 7.0;
  • the red quantum dots, the green quantum dots, and the scattering particles have a particle diameter of 2 nm to 10 nm;
  • red quantum dots are ZnS-coated InP quantum dots
  • green quantum dots are ZnS-coated InAs quantum dots
  • scattering particles are white, blue, or transparent particles
  • a voltage applied between the red/green/blue sub-pixel electrode on the TFT substrate and the corresponding counter electrode unit on the counter electrode is 0.01 V to 30 V, and the energization time is 0.01. s to 1h.
  • a method for preparing a COA type array substrate of the present invention which utilizes a pixel electrode pattern on a TFT substrate and a property in which the solubility of chitosan changes with a change in pH value
  • a quantum dot color filter film including a red filter layer, a green filter layer, and a blue filter layer is formed on the TFT substrate by electrochemical deposition, and the quantum dots are dispersed in the electrolyte before film formation to form a film. There is no other change in the concentration of the quantum dots before and after the removal of the electrolyte.
  • the electrolyte can continue to be used, so that zero waste of quantum dots can be achieved, and compared with the preparation method of the existing color filter film. Eliminates the need for high-temperature processes, effectively increasing quantum dot utilization, while saving two to three lithography processes, thereby reducing costs and protecting the environment.
  • a quantum dot color filter film is formed on the pixel electrode layer, and the color display effect is good, and the light leakage phenomenon caused by the alignment error after the conventional CF substrate and the TFT substrate are formed into a box can be avoided.
  • FIG. 1 is a schematic flow chart of a method for preparing a COA type array substrate of the present invention
  • 2-3 is a schematic view showing the first step of the method for preparing a COA type array substrate of the present invention
  • FIG. 4-5 is a schematic view showing the step 3 of the method for preparing a COA type array substrate of the present invention
  • FIG. 6-7 are schematic views showing the step 4 of the method for preparing a COA type array substrate of the present invention.
  • FIGS. 8-9 are schematic diagrams showing the fifth step of the method for preparing a COA type array substrate of the present invention.
  • Fig. 10 is a schematic view showing a COA type array substrate produced by the present invention for color display.
  • the invention is based on the following principles:
  • Chitosan also known as chitosan
  • chitosan is obtained by deacetylation of chitin.
  • the chemical name is (1,4)-2-amino-2-deoxy- ⁇ -D-gluco
  • the molecular structure of the glycan is as follows:
  • Chitosan is soluble in water under weakly acidic conditions and insoluble in water under neutral and alkaline conditions.
  • the electrode is immersed therein, and the pH of the solution near the electrode is changed by electrochemical reaction, and chitosan and quantum dots can be coprecipitated on the electrode surface;
  • the TFT array substrate is covered with pixel electrodes, and each pixel electrode pair
  • the voltage and current of the pixel electrode corresponding to each sub-pixel can be precisely controlled; therefore, the pixel electrode pattern of the existing TFT array substrate itself is utilized.
  • a monochromatic quantum dot film of a corresponding color is formed on the pixel electrode corresponding to each sub-pixel, thereby forming a quantum dot color filter film.
  • the present invention provides a method for preparing a COA type array substrate, comprising the following steps:
  • a TFT substrate 10 is provided.
  • the TFT substrate 10 includes a base substrate 11, a TFT layer 21 disposed on the base substrate 11, and a pixel electrode layer 22 disposed on the TFT layer 21.
  • the pixel electrode layer 22 includes a plurality of red sub-pixel electrodes 221, a plurality of green sub-pixel electrodes 222, and a plurality of blue sub-pixel electrodes 223;
  • a black matrix 23 is formed on the TFT layer 21 in a space region of a plurality of red, green, and blue sub-pixel electrodes 221, 222, and 223.
  • the TFT layer 21 includes a plurality of TFTs respectively corresponding to the plurality of red, green, and blue sub-pixel electrodes 221, 222, and 223.
  • Step 2 as shown in FIG. 4, FIG. 6, and FIG. 8, providing a counter electrode 50, a first electrolyte solution 61, a second electrolyte solution 62, and a third electrolyte solution 63;
  • the counter electrode 50 includes an insulating substrate 51, And a plurality of counter electrode units 52 disposed on the insulating substrate 51, wherein the plurality of counter electrode units 52 are respectively associated with a plurality of red, green, and blue sub-pixel electrodes 221, 222, and 223 on the TFT substrate 10.
  • the first electrolyte solution 61 is a mixed weakly acidic solution containing red quantum dots and chitosan
  • the second electrolyte solution 62 is a mixed weakly acidic solution containing green quantum dots and chitosan.
  • the tri-electrolyte 63 is a mixed weakly acidic solution containing scattering particles and chitosan.
  • the material of the counter electrode unit 52 may be a conductive material that can withstand an aqueous solution of a weakly acidic oxidizing environment, including but not limited to indium tin oxide (ITO), aluminum-doped zinc oxide (AZO), nickel (Ni), stainless steel, Silver, gold or platinum; preferably, the material of the counter electrode 50 is gold or platinum.
  • ITO indium tin oxide
  • AZO aluminum-doped zinc oxide
  • Ni nickel
  • stainless steel Silver
  • Silver gold or platinum
  • the material of the counter electrode 50 is gold or platinum.
  • the pair of electrode units 52 and the red, green, and blue sub-pixel electrodes 221, 222, and 223 have the same size and shape.
  • the first electrolyte solution 61, the second electrolyte solution 62, and the third electrolyte solution 63 have a pH of 2.0 to 7.0, preferably 5.2.
  • the mass fraction of chitosan in the first electrolyte solution 61, the second electrolyte solution 62, and the third electrolyte solution 63 is 0.001% to 10%, preferably 1%.
  • the concentration of the red quantum dots in the first electrolyte solution 61 and the green quantum dots in the second electrolyte solution 62 is 10 -6 M to 1 M, preferably 0.5 mM.
  • the concentration of the scattering particles in the third electrolyte 63 is 10 -6 M to 1 M, preferably 0.5 mM.
  • the red quantum dot is a quantum dot capable of emitting red fluorescence, preferably an ZnS-coated InP quantum dot
  • the green quantum dot is a quantum dot capable of emitting green fluorescence, preferably, a coated ZnS
  • the InAs quantum dots are white, blue, or transparent particles.
  • the material of the scattering particles is a resin.
  • the red quantum dots, the green quantum dots, and the scattering particles have a particle diameter of 2 nm to 10 nm.
  • Step 3 as shown in FIG. 4-5, the counter electrode 50 and the TFT substrate 10 are immersed in the first electrolyte solution 61, and a plurality of red sub-pixel electrodes 221 on the TFT substrate 10 are used by wires and power sources.
  • a connection circuit is formed between the counter electrode unit 52 corresponding to the red sub-pixel electrode 221 on the counter electrode 50.
  • the TFT substrate 10 serves as a negative electrode, and the counter electrode 50 serves as a positive electrode. After being energized, the TFT substrate 10 is electrically connected.
  • the pH of the first electrolyte 61 in the vicinity of the red sub-pixel electrode 221 is increased, so that the chitosan in the first electrolyte 61 is deposited on the red sub-pixel electrode 221, and the chitosan drives the red quantum dots to be deposited in red.
  • the sub-pixel electrode 221 is formed on the plurality of red sub-pixel electrodes 221 to form a plurality of red filter layers 31; and the electrochemical deposition time is controlled. After the thickness of the red filter layer 31 reaches a certain value, the power is turned off. The TFT substrate 10 and the counter electrode 50 are taken out and cleaned.
  • Step 4 as shown in FIG. 6-7, the TFT substrate 10 on which the red filter layer 31 is deposited is immersed in the second electrolyte 62 together with the counter electrode 50, and the number of wires and power sources on the TFT substrate 10 is used.
  • a green sub-pixel electrode 222 and a counter electrode 50 and a green sub-pixel electrode 222 corresponding to the counter electrode unit 52 form a connection circuit, the TFT substrate 10 as a negative electrode, the counter electrode 50 as a positive electrode, after power-on,
  • the pH of the second electrolyte 62 in the vicinity of the green sub-pixel electrode 222 on the TFT substrate 10 is raised, so that the chitosan in the second electrolyte 62 is deposited on the green sub-pixel electrode 222, which drives the green
  • the quantum dots are deposited on the green sub-pixel electrode 222 to form a plurality of green filter layers 32 on the plurality of green sub-pixel electrodes 222, respectively; and the electrochemical deposition time is controlled, and the thickness
  • Step 5 as shown in FIG. 8-9, the TFT substrate 10 on which the red filter layer 31 and the green filter layer 32 are deposited is immersed in the third electrolyte 63 together with the counter electrode 50, using wires and power sources in the A plurality of blue sub-pixel electrodes 223 on the TFT substrate 10 and a counter electrode unit 52 corresponding to the blue sub-pixel electrode 223 on the counter electrode 50 form a connection circuit, and the TFT substrate 10 serves as a negative electrode, and the counter electrode 50 as a positive electrode, after energization, the pH of the third electrolyte 63 in the vicinity of the blue sub-pixel electrode 223 on the TFT substrate 10 is raised, so that the chitosan in the third electrolyte 63 is deposited on the blue sub-pixel.
  • the chitosan drives the scattering particles to deposit on Blue sub-pixel electrode 223, thereby forming a plurality of blue filter layers 33 on the plurality of blue sub-pixel electrodes 223; controlling the electrochemical deposition time, after the thickness of the blue filter layer 33 reaches a certain value When the power is turned off, the substrate 10 and the counter electrode 50 are taken out and cleaned.
  • the step 3, the step 4, and the step 5 may be performed in any order; after the step 3-5, a plurality of red filter layers 31 and a plurality of green colors are obtained on the pixel electrode layer 22.
  • the filter layer 32 and the quantum dot color filter film 30 of the plurality of blue filter layers 33 are used to produce a COA type array substrate.
  • a voltage applied between the red/green/blue sub-pixel electrodes 221/222/223 on the TFT substrate 10 and the corresponding counter electrode unit 52 on the counter electrode 50 is 0.01 V to 30 V, preferably 2 V, and an energization time of 0.01 s to 1 h, preferably 150 s.
  • the red quantum dots in the red filter layer 31 emit red light and red when excited by the blue backlight.
  • the green quantum dots in the green light filter layer 32 emit green light and emit green under the excitation of the blue backlight.
  • the blue filter layer 33 does not emit light, and the blue backlight passes through the blue filter layer 33. It is blue, which enables color display.
  • the present invention further provides a COA type array substrate, comprising a base substrate 11, a TFT layer 21 disposed on the base substrate 11, and a pixel electrode disposed on the TFT layer 21. a layer 22 and a black matrix 23, and a quantum dot color filter film 30 disposed on the pixel electrode layer 22;
  • the pixel electrode layer 22 includes a plurality of red sub-pixel electrodes 221, a plurality of green sub-pixel electrodes 222, and a plurality of blue sub-pixel electrodes 223;
  • the quantum dot color filter film 30 includes a plurality of The red, green, and blue filter layers 31, 32, and 33 corresponding to the red, green, and blue sub-pixel electrodes 221, 222, and 223.
  • the black matrix 23 is located between the plurality of red, green, and blue sub-pixel electrodes 221, 222, and 223 on the TFT layer 21.
  • the material of the red filter layer 31 is a mixture of red quantum dots and chitosan
  • the material of the green filter layer 32 is a mixture of green quantum dots and chitosan
  • the material of 33 is a mixture of scattering particles and chitosan.
  • the red quantum dot is a quantum dot capable of emitting red fluorescence, preferably an ZnS-coated InP quantum dot
  • the green quantum dot is a quantum dot capable of emitting green fluorescence, preferably, a coated ZnS
  • the InAs quantum dots are white, blue, or transparent particles.
  • the material of the scattering particles is a resin.
  • the red quantum dots, the green quantum dots, and the scattering particles have a particle diameter of 2 nm to 10 nm.
  • the method for preparing a COA type array substrate of the present invention utilizes a pixel electrode pattern on a TFT substrate and a property in which the solubility of chitosan changes with a change in pH value, using an electrochemical deposition method on the TFT substrate.
  • Forming a quantum dot color filter film including a red filter layer, a green filter layer, and a blue filter layer the quantum dots are dispersed in the electrolyte before film formation, and the concentration of the quantum dots of the electrolyte is reduced before and after film formation.
  • the electrolyte can still be used after the quantum dots are added, so zero waste of quantum dots can be realized, and compared with the existing preparation method of the quantum dot color filter film, the high temperature process is not needed, and the efficiency is effectively improved.
  • Quantum dot utilization while saving two to three lithography processes, thereby reducing costs and protecting the environment.
  • the COA type array substrate of the invention forms a quantum dot color filter film on the pixel electrode layer, and the color display effect is good, which can avoid the alignment problem between the conventional CF substrate and the TFT substrate, and reduce the process of the box during the preparation process of the display panel. Difficulty, increase pixel aperture rate.

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Abstract

一种COA型阵列基板的制备方法及COA型阵列基板，利用TFT基板（10）上的像素电极图案、以及壳聚糖的溶解度随pH值变化而改变的性质，使用电化学沉积的方法在TFT基板（10）上形成包括红色滤光层（31）、绿色滤光层（32）、及蓝色滤光层（33）的量子点彩色滤光膜（30），量子点在成膜前分散在电解液（61、62、63）中，成膜前后除电解液（61、62、63）的量子点浓度降低外无其他性质变化，补充量子点后电解液（61、62、63）仍可继续使用，故可实现量子点的零浪费，与现有的彩色滤光膜的制备方法相比，无需使用高温工序，有效提高了量子点利用率，同时能够节省两到三次光刻工艺，从而降低成本、保护环境。

Description

COA型阵列基板的制备方法及COA型阵列基板 技术领域
本发明涉及显示技术领域，尤其涉及一种COA型阵列基板的制备方法及COA型阵列基板。
背景技术
随着显示技术的不断发展，人们对显示装置的显示质量要求也越来越高。量子点(Quantum Dots，简称QDs)通常是由Ⅱ-Ⅵ、或Ⅲ-Ⅴ族元素组成的球形或类球形的半导体纳米微粒，粒径一般在几纳米至数十纳米之间。由于量子点的粒径尺寸小于或者接近相应体材料的激子波尔半径，会产生量子限域效应，其能级结构从体材料的准连续变为量子点材料的离散结构，导致量子点展示出特殊的受激辐射发光的性能。随着量子点的尺寸减小，其能级带隙增加，相应的量子点受激所需要的能量以及量子点受激后回到基态放出的能量都相应的增大，表现为量子点的激发与荧光光谱的“蓝移”现象，通过控制量子点的尺寸，使其发光光谱可以覆盖整个可见光区域。如硒化镉(CdSe)的尺寸从6.6nm减小至2.0nm，其发光波长从红光区域635nm“蓝移”至蓝光区域的460nm。
利用量子点材料具有发光光谱集中，色纯度高、且发光颜色可通过量子点材料的尺寸、结构或成分进行简易调节等这些优点，将其应用在显示装置中可有效地提升显示装置的色域及色彩还原能力。目前，已有多篇文献和专利报道了量子点在薄膜晶体管液晶显示器(Thin Film Transistor Liquid Crystal Display，TFT-LCD)中的应用，其中使用量子点替代传统TFT-LCD的彩膜材料尤为受到人们的关注。使用量子点代替传统的彩色光阻，可以大幅度的提高TFT-LCD的色域和穿透率，带来更好的显示效果。
然而，使用量子点复合树脂制成光刻胶，进而用于制造量子点彩膜存在以下几个问题：首先，量子点耐热性能较差，而传统的TFT光刻制程需经历200度以上的高温，因而为使量子点光刻胶成为可能，必须要将量子点光刻胶的烘烤温度降低，这使得量子点光刻胶的成分势必与传统的光刻胶材料有很大不同，需要大量的研发成本；其次，量子点价格昂贵且多有毒性，而光刻制程中大量的量子点在显影过程中被洗去，造成浪费和环境污染；再次，使用量子点光刻胶仍需使用两到三次成本高昂的光刻制程。
COA(Color Filter on Array)技术是将彩色层制备在阵列基板上的技 术，以形成彩色滤光片。由于COA结构的显示面板不存在彩膜基板与阵列基板的对位问题，因此可以降低显示面板制备过程中对盒制程的难度，避免了对盒时的误差，因此黑色矩阵可以设计为窄线宽，提高了开口率。
发明内容
本发明的目的在于提供一种COA型阵列基板的制备方法，通过电化学沉积方法在TFT基板上形成包括红色、绿色、及蓝色滤光层的量子点彩色滤光膜，与现有的量子点彩色滤光膜的制备方法相比，节约量子点使用量，成本低，且保护环境。
本发明的的目的还在于提供一种COA型阵列基板，将彩色滤光膜制作于阵列基板一侧，色彩显示效果好，可避免传统的CF基板与TFT基板的对位问题，降低显示面板制备过程中对盒制程的难度，提高像素开口率。
为实现上述目的，本发明提供了一种COA型阵列基板的制备方法，包括如下步骤：
步骤1、提供一TFT基板，所述TFT基板包括衬底基板、设于衬底基板上的TFT层、以及设于TFT层上的像素电极层，其中，所述像素电极层包括间隔设置的数个红色子像素电极、数个绿色子像素电极、及数个蓝色子像素电极；
在所述TFT层上位于数个红、绿、蓝子像素电极的间隔区域内形成黑色矩阵；
步骤2、提供对电极、第一电解液、第二电解液、及第三电解液；所述对电极包括绝缘基板、及设于所述绝缘基板上的数个对电极单元，所述数个对电极单元分别与所述TFT基板上的数个红、绿、蓝子像素电极相对应设置；所述第一电解液为包含红色量子点和壳聚糖的混合弱酸性溶液，所述第二电解液为包含绿色量子点和壳聚糖的混合弱酸性溶液，所述第三电解液为包含散射颗粒和壳聚糖的混合弱酸性溶液；
步骤3、将对电极与所述TFT基板一同浸入到第一电解液中，使用导线、电源在所述TFT基板上的红色子像素电极与对电极上与红色子像素电极相对应的对电极单元之间形成连接电路，所述TFT基板作为负极，所述对电极作为正极，通电后，所述TFT基板上的红色子像素电极附近的第一电解液的pH值升高，使得第一电解液内的壳聚糖沉积于红色子像素电极上，所述壳聚糖带动红色量子点沉积于红色子像素电极上，从而分别在数个红色子像素电极上形成数个红色滤光层；控制电化学沉积时间，待所述红色滤光层的厚度达到一定值后，断电，取出TFT基板和对电极，并进行 清洗；
步骤4、将所述TFT基板与对电极一同浸入到第二电解液中，使用导线、电源在所述TFT基板上的绿色子像素电极和对电极上与绿色子像素电极相对应的对电极单元之间形成连接电路，所述TFT基板作为负极，所述对电极作为正极，通电后，所述TFT基板上的绿色子像素电极附近的第二电解液的pH值升高，使得第二电解液内的壳聚糖沉积于绿色子像素电极上，所述壳聚糖带动绿色量子点沉积于绿色子像素电极上，从而分别在数个绿色子像素电极上形成数个绿色滤光层；控制电化学沉积时间，待所述绿色滤光层的厚度达到一定值后，断电，取出TFT基板和对电极，并进行清洗；
步骤5、将所述TFT基板与对电极一同浸入到第三电解液中，使用导线、电源在所述TFT基板上的数个蓝色子像素电极与对电极上与蓝色子像素电极相对应的对电极单元之间形成连接电路，所述TFT基板作为负极，所述对电极作为正极，通电后，所述TFT基板上的蓝色子像素电极附近的第三电解液的pH值升高，使得第三电解液内的壳聚糖沉积于蓝色子像素电极上，所述壳聚糖带动散射颗粒沉积于蓝色子像素电极上，从而在数个蓝色子像素电极上形成数个蓝色滤光层；控制电化学沉积时间，待所述蓝色滤光层的厚度达到一定值后，断电，取出基板和对电极，并进行清洗；
所述步骤3、步骤4、和步骤5可以按任意顺序进行；经过所述步骤3-5后，在所述像素电极层上得到包括数个红色滤光层、数个绿色滤光层、及数个蓝色滤光层的量子点彩色滤光膜，从而制得一COA型阵列基板。
所述第一电解液、第二电解液、及第三电解液中壳聚糖的质量分数为0.001％～10％；所述第一电解液中红色量子点、及所述第二电解液中绿色量子点的浓度为10-6M～1M；所述第三电解液中散射颗粒的浓度为10-6M～1M；所述第一电解液、第二电解液、及第三电解液的pH值为2.0～7.0。
所述第一电解液、第二电解液、及第三电解液中壳聚糖的质量分数为1％；所述第一电解液中红色量子点、及所述第二电解液中绿色量子点的浓度为0.5mM；所述第三电解液中散射颗粒的浓度为0.5mM；所述第一电解液、第二电解液、及第三电解液的pH值为5.2。
所述红色量子点、绿色量子点、及散射颗粒的粒径为2nm～10nm。
所述红色量子点为包覆ZnS的InP量子点；所述绿色量子点为包覆ZnS的InAs量子点；所述散射颗粒为白色、蓝色、或透明的颗粒。
所述步骤3-5中，对所述TFT基板上的红/绿/蓝子像素电极和对电极上相对应的对电极单元之间施加的电压为0.01V～30V，通电时间为0.01s到1h。
所述步骤3-5中，对所述TFT基板上的红/绿/蓝子像素电极和对电极上相对应的对电极单元之间施加的电压为2V，通电时间应为150s。
所述对电极单元的材料为氧化铟锡、掺铝氧化锌、镍、不锈钢、银、金或铂。
所述对电极单元的材料为金或铂。
本发明还提供一种COA型阵列基板包括衬底基板、设于衬底基板上的TFT层、设于TFT层上的像素电极层与黑色矩阵、以及设于所述像素电极层上的量子点彩色滤光膜；
所述像素电极层包括间隔设置的数个红色子像素电极、数个绿色子像素电极、及数个蓝色子像素电极；所述量子点彩色滤光膜包括分别与数个红、绿、蓝色子像素电极相对应的数个红、绿、蓝色滤光层；
其中，所述红色滤光层的材料为红色量子点与壳聚糖的混合物；所述绿色滤光层的材料为绿色量子点与壳聚糖的混合物；所述蓝色滤光层的材料为散射颗粒与壳聚糖的混合物。
本发明还提供一种COA型阵列基板的制备方法，包括如下步骤：
步骤1、提供一TFT基板，所述TFT基板包括衬底基板、设于衬底基板上的TFT层、以及设于TFT层上的像素电极层，其中，所述像素电极层包括间隔设置的数个红色子像素电极、数个绿色子像素电极、及数个蓝色子像素电极；
在所述TFT层上位于数个红、绿、蓝子像素电极的间隔区域内形成黑色矩阵；
步骤2、提供对电极、第一电解液、第二电解液、及第三电解液；所述对电极包括绝缘基板、及设于所述绝缘基板上的数个对电极单元，所述数个对电极单元分别与所述TFT基板上的数个红、绿、蓝子像素电极相对应设置；所述第一电解液为包含红色量子点和壳聚糖的混合弱酸性溶液，所述第二电解液为包含绿色量子点和壳聚糖的混合弱酸性溶液，所述第三电解液为包含散射颗粒和壳聚糖的混合弱酸性溶液；
步骤3、将对电极与所述TFT基板一同浸入到第一电解液中，使用导线、电源在所述TFT基板上的红色子像素电极与对电极上与红色子像素电极相对应的对电极单元之间形成连接电路，所述TFT基板作为负极，所述对电极作为正极，通电后，所述TFT基板上的红色子像素电极附近的第一电解液的pH值升高，使得第一电解液内的壳聚糖沉积于红色子像素电极上，所述壳聚糖带动红色量子点沉积于红色子像素电极上，从而分别在数个红色子像素电极上形成数个红色滤光层；控制电化学沉积时间，待所述 红色滤光层的厚度达到一定值后，断电，取出TFT基板和对电极，并进行清洗；
步骤4、将所述TFT基板与对电极一同浸入到第二电解液中，使用导线、电源在所述TFT基板上的绿色子像素电极和对电极上与绿色子像素电极相对应的对电极单元之间形成连接电路，所述TFT基板作为负极，所述对电极作为正极，通电后，所述TFT基板上的绿色子像素电极附近的第二电解液的pH值升高，使得第二电解液内的壳聚糖沉积于绿色子像素电极上，所述壳聚糖带动绿色量子点沉积于绿色子像素电极上，从而分别在数个绿色子像素电极上形成数个绿色滤光层；控制电化学沉积时间，待所述绿色滤光层的厚度达到一定值后，断电，取出TFT基板和对电极，并进行清洗；
步骤5、将所述TFT基板与对电极一同浸入到第三电解液中，使用导线、电源在所述TFT基板上的数个蓝色子像素电极与对电极上与蓝色子像素电极相对应的对电极单元之间形成连接电路，所述TFT基板作为负极，所述对电极作为正极，通电后，所述TFT基板上的蓝色子像素电极附近的第三电解液的pH值升高，使得第三电解液内的壳聚糖沉积于蓝色子像素电极上，所述壳聚糖带动散射颗粒沉积于蓝色子像素电极上，从而在数个蓝色子像素电极上形成数个蓝色滤光层；控制电化学沉积时间，待所述蓝色滤光层的厚度达到一定值后，断电，取出基板和对电极，并进行清洗；
所述步骤3、步骤4、和步骤5可以按任意顺序进行；经过所述步骤3-5后，在所述像素电极层上得到包括数个红色滤光层、数个绿色滤光层、及数个蓝色滤光层的量子点彩色滤光膜，从而制得一COA型阵列基板；
其中，所述第一电解液、第二电解液、及第三电解液中壳聚糖的质量分数为0.001％～10％；所述第一电解液中红色量子点、及所述第二电解液中绿色量子点的浓度为10-6M～1M；所述第三电解液中散射颗粒的浓度为10-6M～1M；所述第一电解液、第二电解液、及第三电解液的pH值为2.0～7.0；
其中，所述红色量子点、绿色量子点、及散射颗粒的粒径为2nm～10nm；
其中，所述红色量子点为包覆ZnS的InP量子点；所述绿色量子点为包覆ZnS的InAs量子点；所述散射颗粒为白色、蓝色、或透明的颗粒；
其中，所述步骤3-5中，对所述TFT基板上的红/绿/蓝子像素电极和对电极上相对应的对电极单元之间施加的电压为0.01V～30V，通电时间为0.01s到1h。
本发明的有益效果：本发明的COA型阵列基板的制备方法，利用TFT基板上的像素电极图案、以及壳聚糖的溶解度随pH值变化而改变的性质， 使用电化学沉积的方法在TFT基板上形成包括红色滤光层、绿色滤光层、及蓝色滤光层的量子点彩色滤光膜，量子点在成膜前分散在电解液中，成膜前后除电解液的量子点浓度降低外无其他性质变化，补充量子点后电解液仍可继续使用，故可实现量子点的零浪费，且与现有的彩色滤光膜的制备方法相比，无需使用高温工序，有效提高了量子点利用率，同时能够节省两到三次光刻工艺，从而降低成本、保护环境。本发明的COA型阵列基板，在像素电极层上形成量子点彩色滤光膜，色彩显示效果好，可避免传统的CF基板与TFT基板成盒后因对位误差而出现的漏光现象。
附图说明
下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其他有益效果显而易见。
附图中，
图1为本发明的COA型阵列基板的制备方法的示意流程图；
图2-3为本发明的COA型阵列基板的制备方法的步骤1的示意图；
图4-5为本发明的COA型阵列基板的制备方法的步骤3的示意图；
图6-7为本发明的COA型阵列基板的制备方法的步骤4的示意图；
图8-9为本发明的COA型阵列基板的制备方法的步骤5的示意图；
图10为本发明制得的COA型阵列基板用于彩色显示的示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
本发明基于以下原理实现：
壳聚糖(chitosan)又称脱乙酰甲壳素，是由几丁质(chitin)经过脱乙酰作用得到的，化学名称为(1,4)-2-氨基-2-脱氧-β-D-葡聚糖，其分子结构如下：
Figure PCTCN2015098504-appb-000001
壳聚糖在弱酸性条件下可溶于水，在中性和碱性条件下不溶于水。因而，如果配制含壳聚糖和量子点的溶液，将电极沉浸于其中，通过电化学反应改变电极附近溶液的pH值，则可以将壳聚糖与量子点共沉淀于电极表面；而在TFT-LCD中，TFT阵列基板上布满了像素电极，每个像素电极对 应一个子像素，通过控制相应TFT中栅极的电压和源极的电压、电流，可以精确控制每个子像素对应的像素电极的电压、电流；因此，利用现有TFT阵列基板本身的像素电极图案，通过电化学沉积的方法可实现各子像素对应的像素电极上形成对应颜色的单色量子点膜，从而形成量子点彩色滤光膜。
请参阅图1，本发明提供一种COA型阵列基板的制备方法，包括如下步骤：
步骤1、如图2所示，提供一TFT基板10，所述TFT基板10包括衬底基板11、设于衬底基板11上的TFT层21、以及设于TFT层21上的像素电极层22，其中，所述像素电极层22包括间隔设置的数个红色子像素电极221、数个绿色子像素电极222、及数个蓝色子像素电极223；
如图3所示，在所述TFT层21上位于数个红、绿、蓝子像素电极221、222、223的间隔区域内形成黑色矩阵23。
具体的，所述TFT层21包括分别与数个红、绿、蓝子像素电极221、222、223相对应的数个TFT。
步骤2、如图4、图6、及图8所示，提供对电极50、第一电解液61、第二电解液62、及第三电解液63；所述对电极50包括绝缘基板51、及设于所述绝缘基板51上的数个对电极单元52，所述数个对电极单元52分别与所述TFT基板10上的数个红、绿、蓝子像素电极221、222、223相对应设置；所述第一电解液61为包含红色量子点和壳聚糖的混合弱酸性溶液，所述第二电解液62为包含绿色量子点和壳聚糖的混合弱酸性溶液，所述第三电解液63为包含散射颗粒和壳聚糖的混合弱酸性溶液。
具体的，所述对电极单元52的材料可以是可以耐弱酸性氧化环境水溶液的导电材料，包括但不限于氧化铟锡(ITO)、掺铝氧化锌(AZO)、镍(Ni)、不锈钢、银、金或铂；优选的，所述对电极50的材料为金或铂。
优选的，所述对电极单元52与所述红、绿、蓝子像素电极221、222、223的大小和形状相同。
具体的，所述第一电解液61、第二电解液62、及第三电解液63的pH值为2.0～7.0，优选为5.2。
具体的，所述第一电解液61、第二电解液62、及第三电解液63中壳聚糖的质量分数为0.001％～10％，优选为1％。
具体的，所述第一电解液61中红色量子点、及所述第二电解液62中绿色量子点的浓度为10-6M～1M，优选为0.5mM。
具体的，所述第三电解液63中散射颗粒的浓度为10-6M～1M，优选为 0.5mM。
具体的，所述红色量子点为能发射红色荧光的量子点，优选的，为包覆ZnS的InP量子点；所述绿色量子点为能发射绿色荧光的量子点，优选的，为包覆ZnS的InAs量子点；所述散射颗粒为白色、蓝色、或透明的颗粒，优选的，所述散射颗粒的材料为树脂。
具体的，所述红色量子点、绿色量子点、及散射颗粒的粒径为2nm～10nm。
步骤3、如图4-5所示，将对电极50与所述TFT基板10一同浸入到第一电解液61中，使用导线、电源在所述TFT基板10上的数个红色子像素电极221与对电极50上与红色子像素电极221相对应的对电极单元52之间形成连接电路，所述TFT基板10作为负极，所述对电极50作为正极，通电后，所述TFT基板10上的红色子像素电极221附近的第一电解液61的pH值升高，使得第一电解液61内的壳聚糖沉积于红色子像素电极221上，所述壳聚糖带动红色量子点沉积于红色子像素电极221上，从而分别在数个红色子像素电极221上形成数个红色滤光层31；控制电化学沉积时间，待所述红色滤光层31的厚度达到一定值后，断电，取出TFT基板10和对电极50，并进行清洗。
步骤4、如图6-7所示，将沉积了红色滤光层31的TFT基板10与对电极50一同浸入到第二电解液62中，使用导线、电源在所述TFT基板10上的数个绿色子像素电极222和对电极50与绿色子像素电极222相对应的对电极单元52之间形成连接电路，所述TFT基板10作为负极，所述对电极50作为正极，通电后，所述TFT基板10上的绿色子像素电极222附近的第二电解液62的pH值升高，使得第二电解液62内的壳聚糖沉积于绿色子像素电极222上，所述壳聚糖带动绿色量子点沉积于绿色子像素电极222上，从而分别在数个绿色子像素电极222上形成数个绿色滤光层32；控制电化学沉积时间，待所述绿色滤光层32的厚度达到一定值后，断电，取出TFT基板10和对电极50，并进行清洗。
步骤5、如图8-9所示，将沉积了红色滤光层31与绿色滤光层32的TFT基板10与对电极50一同浸入到第三电解液63中，使用导线、电源在所述TFT基板10上的数个蓝色子像素电极223与对电极50上与蓝色子像素电极223相对应的对电极单元52之间形成连接电路，所述TFT基板10作为负极，所述对电极50作为正极，通电后，所述TFT基板10上的蓝色子像素电极223附近的第三电解液63的pH值升高，使得第三电解液63内的壳聚糖沉积于蓝色子像素电极223上，所述壳聚糖带动散射颗粒沉积于 蓝色子像素电极223上，从而在数个蓝色子像素电极223上形成数个蓝色滤光层33；控制电化学沉积时间，待所述蓝色滤光层33的厚度达到一定值后，断电，取出基板10和对电极50，并进行清洗。
具体的，所述步骤3、步骤4、和步骤5可以按任意顺序进行；经过所述步骤3-5后，在所述像素电极层22上得到包括数个红色滤光层31、数个绿色滤光层32、及数个蓝色滤光层33的量子点彩色滤光膜30，从而制得一COA型阵列基板。
具体的，所述步骤3-5中，对所述TFT基板10上的红/绿/蓝子像素电极221/222/223和对电极50上相对应的对电极单元52之间施加的电压为0.01V～30V，优选为2V，通电时间为0.01s到1h，优选为150s。
如图10所示，所得到的量子点彩色滤光膜30用于彩色显示时，所述红光滤光层31内的红色量子点在蓝光背光的光激发下发出红光而显红色，所述绿光滤光层32内的绿色量子点在蓝光背光的光激发下发出绿光而显绿色，所述蓝色滤光层33不发光，蓝光背光穿过所述蓝色滤光层33而显蓝色，从而实现了彩色显示。
请参阅图9-10，基于上述制作方法，本发明还提供一种COA型阵列基板，包括衬底基板11、设于衬底基板11上的TFT层21、设于TFT层21上的像素电极层22与黑色矩阵23、以及设于所述像素电极层22上的量子点彩色滤光膜30；
所述像素电极层22包括间隔设置的数个红色子像素电极221、数个绿色子像素电极222、及数个蓝色子像素电极223；所述量子点彩色滤光膜30包括分别与数个红、绿、蓝色子像素电极221、222、223相对应的数个红、绿、蓝色滤光层31、32、33。
具体的，所述黑色矩阵23位于所述TFT层21上数个红、绿、蓝色子像素电极221、222、223之间。
具体的，所述红色滤光层31的材料为红色量子点与壳聚糖的混合物；所述绿色滤光层32的材料为绿色量子点与壳聚糖的混合物；所述蓝色滤光层33的材料为散射颗粒与壳聚糖的混合物。
具体的，所述红色量子点为能发射红色荧光的量子点，优选的，为包覆ZnS的InP量子点；所述绿色量子点为能发射绿色荧光的量子点，优选的，为包覆ZnS的InAs量子点；所述散射颗粒为白色、蓝色、或透明的颗粒，优选的，所述散射颗粒的材料为树脂。
具体的，所述红色量子点、绿色量子点、及散射颗粒的粒径为2nm～10nm。
综上所述，本发明的COA型阵列基板的制备方法，利用TFT基板上的像素电极图案、以及壳聚糖的溶解度随pH值变化而改变的性质，使用电化学沉积的方法在TFT基板上形成包括红色滤光层、绿色滤光层、及蓝色滤光层的量子点彩色滤光膜，量子点在成膜前分散在电解液中，成膜前后除电解液的量子点浓度降低外无其他性质变化，补充量子点后电解液仍可继续使用，故可实现量子点的零浪费，且与现有的量子点彩色滤光膜的制备方法相比，无需使用高温工序，有效提高了量子点利用率，同时能够节省两到三次光刻工艺，从而降低成本、保护环境。本发明的COA型阵列基板，在像素电极层上形成量子点彩色滤光膜，色彩显示效果好，可避免传统的CF基板与TFT基板的对位问题，降低显示面板制备过程中对盒制程的难度，提高像素开口率。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

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  1. 一种COA型阵列基板的制备方法，包括如下步骤：
    步骤1、提供一TFT基板，所述TFT基板包括衬底基板、设于衬底基板上的TFT层、以及设于TFT层上的像素电极层，其中，所述像素电极层包括间隔设置的数个红色子像素电极、数个绿色子像素电极、及数个蓝色子像素电极；
    在所述TFT层上位于数个红、绿、蓝子像素电极的间隔区域内形成黑色矩阵；
    步骤2、提供对电极、第一电解液、第二电解液、及第三电解液；所述对电极包括绝缘基板、及设于所述绝缘基板上的数个对电极单元，所述数个对电极单元分别与所述TFT基板上的数个红、绿、蓝子像素电极相对应设置；所述第一电解液为包含红色量子点和壳聚糖的混合弱酸性溶液，所述第二电解液为包含绿色量子点和壳聚糖的混合弱酸性溶液，所述第三电解液为包含散射颗粒和壳聚糖的混合弱酸性溶液；
    步骤3、将对电极与所述TFT基板一同浸入到第一电解液中，使用导线、电源在所述TFT基板上的红色子像素电极与对电极上与红色子像素电极相对应的对电极单元之间形成连接电路，所述TFT基板作为负极，所述对电极作为正极，通电后，所述TFT基板上的红色子像素电极附近的第一电解液的pH值升高，使得第一电解液内的壳聚糖沉积于红色子像素电极上，所述壳聚糖带动红色量子点沉积于红色子像素电极上，从而分别在数个红色子像素电极上形成数个红色滤光层；控制电化学沉积时间，待所述红色滤光层的厚度达到一定值后，断电，取出TFT基板和对电极，并进行清洗；
    步骤4、将所述TFT基板与对电极一同浸入到第二电解液中，使用导线、电源在所述TFT基板上的绿色子像素电极和对电极上与绿色子像素电极相对应的对电极单元之间形成连接电路，所述TFT基板作为负极，所述对电极作为正极，通电后，所述TFT基板上的绿色子像素电极附近的第二电解液的pH值升高，使得第二电解液内的壳聚糖沉积于绿色子像素电极上，所述壳聚糖带动绿色量子点沉积于绿色子像素电极上，从而分别在数个绿色子像素电极上形成数个绿色滤光层；控制电化学沉积时间，待所述绿色滤光层的厚度达到一定值后，断电，取出TFT基板和对电极，并进行清洗；
    步骤5、将所述TFT基板与对电极一同浸入到第三电解液中，使用导线、电源在所述TFT基板上的数个蓝色子像素电极与对电极上与蓝色子像素电极相对应的对电极单元之间形成连接电路，所述TFT基板作为负极，所述对电极作为正极，通电后，所述TFT基板上的蓝色子像素电极附近的第三电解液的pH值升高，使得第三电解液内的壳聚糖沉积于蓝色子像素电极上，所述壳聚糖带动散射颗粒沉积于蓝色子像素电极上，从而在数个蓝色子像素电极上形成数个蓝色滤光层；控制电化学沉积时间，待所述蓝色滤光层的厚度达到一定值后，断电，取出基板和对电极，并进行清洗；
    所述步骤3、步骤4、和步骤5可以按任意顺序进行；经过所述步骤3-5后，在所述像素电极层上得到包括数个红色滤光层、数个绿色滤光层、及数个蓝色滤光层的量子点彩色滤光膜，从而制得一COA型阵列基板。
  2. 如权利要求1所述的COA型阵列基板的制备方法，其中，所述第一电解液、第二电解液、及第三电解液中壳聚糖的质量分数为0.001％～10％；所述第一电解液中红色量子点、及所述第二电解液中绿色量子点的浓度为10-6M～1M；所述第三电解液中散射颗粒的浓度为10-6M～1M；所述第一电解液、第二电解液、及第三电解液的pH值为2.0～7.0。
  3. 如权利要求2所述的COA型阵列基板的制备方法，其中，所述第一电解液、第二电解液、及第三电解液中壳聚糖的质量分数为1％；所述第一电解液中红色量子点、及所述第二电解液中绿色量子点的浓度为0.5mM；所述第三电解液中散射颗粒的浓度为0.5mM；所述第一电解液、第二电解液、及第三电解液的pH值为5.2。
  4. 如权利要求1所述的COA型阵列基板的制备方法，其中，所述红色量子点、绿色量子点、及散射颗粒的粒径为2nm～10nm。
  5. 如权利要求1所述的COA型阵列基板的制备方法，其中，所述红色量子点为包覆ZnS的InP量子点；所述绿色量子点为包覆ZnS的InAs量子点；所述散射颗粒为白色、蓝色、或透明的颗粒。
  6. 如权利要求1所述的COA型阵列基板的制备方法，其中，所述步骤3-5中，对所述TFT基板上的红/绿/蓝子像素电极和对电极上相对应的对电极单元之间施加的电压为0.01V～30V，通电时间为0.01s到1h。
  7. 如权利要求6所述的COA型阵列基板的制备方法，其中，所述步骤3-5中，对所述TFT基板上的红/绿/蓝子像素电极和对电极上相对应的对电极单元之间施加的电压为2V，通电时间应为150s。
  8. 如权利要求1所述的COA型阵列基板的制备方法，其中，所述对电极单元的材料为氧化铟锡、掺铝氧化锌、镍、不锈钢、银、金或铂。
  9. 如权利要求1所述的COA型阵列基板的制备方法，其中，所述对电极单元的材料为金或铂。
  10. 一种COA型阵列基板，包括衬底基板、设于衬底基板上的TFT层、设于TFT层上的像素电极层与黑色矩阵、以及设于所述像素电极层上的量子点彩色滤光膜；
    所述像素电极层包括间隔设置的数个红色子像素电极、数个绿色子像素电极、及数个蓝色子像素电极；所述量子点彩色滤光膜包括分别与数个红、绿、蓝色子像素电极相对应的数个红、绿、蓝色滤光层；
    其中，所述红色滤光层的材料为红色量子点与壳聚糖的混合物；所述绿色滤光层的材料为绿色量子点与壳聚糖的混合物；所述蓝色滤光层的材料为散射颗粒与壳聚糖的混合物。
  11. 一种COA型阵列基板的制备方法，包括如下步骤：
    步骤1、提供一TFT基板，所述TFT基板包括衬底基板、设于衬底基板上的TFT层、以及设于TFT层上的像素电极层，其中，所述像素电极层包括间隔设置的数个红色子像素电极、数个绿色子像素电极、及数个蓝色子像素电极；
    在所述TFT层上位于数个红、绿、蓝子像素电极的间隔区域内形成黑色矩阵；
    步骤2、提供对电极、第一电解液、第二电解液、及第三电解液；所述对电极包括绝缘基板、及设于所述绝缘基板上的数个对电极单元，所述数个对电极单元分别与所述TFT基板上的数个红、绿、蓝子像素电极相对应设置；所述第一电解液为包含红色量子点和壳聚糖的混合弱酸性溶液，所述第二电解液为包含绿色量子点和壳聚糖的混合弱酸性溶液，所述第三电解液为包含散射颗粒和壳聚糖的混合弱酸性溶液；
    步骤3、将对电极与所述TFT基板一同浸入到第一电解液中，使用导线、电源在所述TFT基板上的红色子像素电极与对电极上与红色子像素电极相对应的对电极单元之间形成连接电路，所述TFT基板作为负极，所述对电极作为正极，通电后，所述TFT基板上的红色子像素电极附近的第一电解液的pH值升高，使得第一电解液内的壳聚糖沉积于红色子像素电极上，所述壳聚糖带动红色量子点沉积于红色子像素电极上，从而分别在数个红色子像素电极上形成数个红色滤光层；控制电化学沉积时间，待所述红色滤光层的厚度达到一定值后，断电，取出TFT基板和对电极，并进行清洗；
    步骤4、将所述TFT基板与对电极一同浸入到第二电解液中，使用导 线、电源在所述TFT基板上的绿色子像素电极和对电极上与绿色子像素电极相对应的对电极单元之间形成连接电路，所述TFT基板作为负极，所述对电极作为正极，通电后，所述TFT基板上的绿色子像素电极附近的第二电解液的pH值升高，使得第二电解液内的壳聚糖沉积于绿色子像素电极上，所述壳聚糖带动绿色量子点沉积于绿色子像素电极上，从而分别在数个绿色子像素电极上形成数个绿色滤光层；控制电化学沉积时间，待所述绿色滤光层的厚度达到一定值后，断电，取出TFT基板和对电极，并进行清洗；
    步骤5、将所述TFT基板与对电极一同浸入到第三电解液中，使用导线、电源在所述TFT基板上的数个蓝色子像素电极与对电极上与蓝色子像素电极相对应的对电极单元之间形成连接电路，所述TFT基板作为负极，所述对电极作为正极，通电后，所述TFT基板上的蓝色子像素电极附近的第三电解液的pH值升高，使得第三电解液内的壳聚糖沉积于蓝色子像素电极上，所述壳聚糖带动散射颗粒沉积于蓝色子像素电极上，从而在数个蓝色子像素电极上形成数个蓝色滤光层；控制电化学沉积时间，待所述蓝色滤光层的厚度达到一定值后，断电，取出基板和对电极，并进行清洗；
    所述步骤3、步骤4、和步骤5可以按任意顺序进行；经过所述步骤3-5后，在所述像素电极层上得到包括数个红色滤光层、数个绿色滤光层、及数个蓝色滤光层的量子点彩色滤光膜，从而制得一COA型阵列基板；
    其中，所述第一电解液、第二电解液、及第三电解液中壳聚糖的质量分数为0.001％～10％；所述第一电解液中红色量子点、及所述第二电解液中绿色量子点的浓度为10-6M～1M；所述第三电解液中散射颗粒的浓度为10-6M～1M；所述第一电解液、第二电解液、及第三电解液的pH值为2.0～7.0；
    其中，所述红色量子点、绿色量子点、及散射颗粒的粒径为2nm～10nm；
    其中，所述红色量子点为包覆ZnS的InP量子点；所述绿色量子点为包覆ZnS的InAs量子点；所述散射颗粒为白色、蓝色、或透明的颗粒；
    其中，所述步骤3-5中，对所述TFT基板上的红/绿/蓝子像素电极和对电极上相对应的对电极单元之间施加的电压为0.01V～30V，通电时间为0.01s到1h。
  12. 如权利要求11所述的COA型阵列基板的制备方法，其中，所述第一电解液、第二电解液、及第三电解液中壳聚糖的质量分数为1％；所述第一电解液中红色量子点、及所述第二电解液中绿色量子点的浓度为0.5mM；所述第三电解液中散射颗粒的浓度为0.5mM；所述第一电解液、第二电解液、及第三电解液的pH值为5.2。
  13. 如权利要求11所述的COA型阵列基板的制备方法，其中，所述步骤3-5中，对所述TFT基板上的红/绿/蓝子像素电极和对电极上相对应的对电极单元之间施加的电压为2V，通电时间应为150s。
  14. 如权利要求11所述的COA型阵列基板的制备方法，其中，所述对电极单元的材料为氧化铟锡、掺铝氧化锌、镍、不锈钢、银、金或铂。
  15. 如权利要求11所述的COA型阵列基板的制备方法，其中，所述对电极单元的材料为金或铂。
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