WO2017059627A1 - 量子点层图形化的方法及量子点彩膜的制备方法 - Google Patents

量子点层图形化的方法及量子点彩膜的制备方法 Download PDF

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WO2017059627A1
WO2017059627A1 PCT/CN2015/098142 CN2015098142W WO2017059627A1 WO 2017059627 A1 WO2017059627 A1 WO 2017059627A1 CN 2015098142 W CN2015098142 W CN 2015098142W WO 2017059627 A1 WO2017059627 A1 WO 2017059627A1
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quantum dot
layer
monochromatic
dot layer
photoresist
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French (fr)
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梁宇恒
刘国和
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/201—Filters in the form of arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/206—Filters comprising particles embedded in a solid matrix
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/22—Absorbing filters
    • G02B5/223—Absorbing filters containing organic substances, e.g. dyes, inks or pigments
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133514—Colour filters
    • G02F1/133516—Methods for their manufacture, e.g. printing, electro-deposition or photolithography
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133617—Illumination with ultraviolet light; Luminescent elements or materials associated to the cell
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
    • G03F7/0007—Filters, e.g. additive colour filters; Components for display devices
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/773—Nanoparticle, i.e. structure having three dimensions of 100 nm or less
    • Y10S977/774—Exhibiting three-dimensional carrier confinement, e.g. quantum dots

Definitions

  • the present invention relates to the field of display technologies, and in particular, to a method for patterning a quantum dot layer and a method for preparing a quantum dot color film.
  • Quantum Dots are usually spherical or spheroidal semiconductor nanoparticles composed of II-VI or III-V elements, and the particle size is generally between several nanometers and several tens of nanometers. Since the particle size of QDs is smaller or closer to the exciton Bohr radius of the corresponding bulk material, a quantum confinement effect is generated, and the energy level structure changes from quasi-continuous of the bulk material to discrete structure of the quantum dot material, resulting in special QDs. The performance of stimulated radiation.
  • the bandgap of the energy level increases, the energy required for the corresponding QDs to be stimulated, and the energy released by the QDs after returning to the ground state are correspondingly increased, which is manifested by the excitation and fluorescence spectra of QDs.
  • the "blue shift" phenomenon by controlling the size of the QDs, allows the luminescence spectrum to cover the entire visible region. For example, the size of cadmium selenide (CdSe) is reduced from 6.6 nm to 2.0 nm, and its emission wavelength is "blue shifted" from the red light region 635 nm to 460 nm in the blue light region.
  • the quantum dot material has the advantages of concentrated luminescence spectrum, high color purity, and easy adjustment of the luminescent color by the size, structure or composition of the quantum dot material, and the use of these advantages in the display device can effectively enhance the color of the display device. Domain and color reproduction capabilities.
  • the patent CN 102944943A and the patent US20150002788A1 both propose a technical solution for replacing the color filter with a quantum dot layer having a pattern structure for color display purposes, but the patents do not graphically map the quantum dot layer. The method is explained.
  • Patent CN103226260A provides a method for dispersing quantum dots in a photoresist to pattern a quantum dot layer by a photolithography process, but the quantum dots are dispersed in the photoresist due to an initiator in the photoresist.
  • Various polymer materials such as polymer monomers, polymers, additives, etc.
  • the surface chemical environment of quantum dots is complex, which has a great influence on the luminous efficiency of quantum dots.
  • quantum dot patterns can also be produced by transfer, screen printing, etc., but the resolution of the quantum dot pattern obtained by the transfer method is not high, the edges of the pattern are jagged, and the quantum dot layer and the substrate are Adhesive force needs to be improved; and the method of inkjet printing to form a patterned quantum dot layer is very demanding on inkjet printing equipment. There are still technical barriers to ensuring the stability and printing accuracy of inkjet ink droplets, and mass production is still not possible.
  • the object of the present invention is to provide a method for patterning a quantum dot layer, which can prepare a fine quantum dot pattern, and the method can simplify the surface chemical environment of the quantum dot, thereby improving the luminous efficiency of the quantum dot.
  • the object of the present invention is to provide a method for preparing a quantum dot color film, which can prepare a fine quantum dot pattern, and the method can simplify the surface chemical environment of the quantum dot, thereby improving the luminous efficiency of the quantum dot, thereby effectively improving the display. Resolution of the device, and backlight utilization.
  • the present invention first provides a method for patterning a quantum dot layer, comprising the following steps:
  • Step 1 providing a substrate, coating a monochromatic quantum dot on the substrate, and after curing, obtaining a monochromatic quantum dot layer, the monochromatic quantum dot layer emitting monochromatic light of a corresponding color under light excitation;
  • Step 2 coating a photoresist on the monochromatic quantum dot layer to form a photoresist film, exposing the photoresist film through the photomask, developing and baking, and obtaining a photoresist layer;
  • Step 3 using a photoresist layer as a shielding layer, etching the monochromatic quantum dot layer, removing a portion of the monochromatic quantum dot layer that is not covered by the photoresist layer, and obtaining a patterned monochromatic quantum dot layer.
  • the monochromatic quantum dot glue comprises a cured colloid and a monochromatic quantum dot mixed in the solidified colloid; the cured colloid is a thermosetting adhesive or an ultraviolet curable adhesive; in the step 1, the thermal curing or the ultraviolet curing is adopted. The way to cure.
  • the material of the monochromatic quantum dot contained in the monochromatic quantum dot glue comprises one or more of a group II-VI quantum dot material and a group I-III-VI quantum dot material.
  • the material of the monochromatic quantum dots contained in the monochromatic quantum dot glue includes one or more of CdSe, CdS, CdTe, ZnS, ZnSe, CuInS, and ZnCuInS.
  • the monochromatic quantum dot layer has a thickness of 1-50 ⁇ m; optionally, the photoresist is a transparent material; and the step 3 uses a dry etching method or a wet etching method to the monochromatic quantum dots.
  • the layer is etched.
  • the photoresist is a non-transparent material
  • the method for patterning the quantum dot layer further includes:
  • step 4 the photoresist layer is stripped from the patterned monochromatic quantum dot layer by a stripping solution.
  • the invention also provides a preparation method of a quantum dot color film, comprising the following steps:
  • Step 1 Providing a substrate, where the substrate includes a red sub-pixel region, a green sub-pixel region, and a blue sub-pixel region;
  • Step 2 forming a patterned red quantum dot layer corresponding to the red sub-pixel region on the substrate; forming a patterned green quantum dot layer corresponding to the green sub-pixel region; Forming a blue quantum dot layer or an organic transparent photoresist layer in the blue sub-pixel region;
  • the patterned red quantum dot layer, the patterned green quantum dot layer, and the patterned blue quantum dot layer are respectively subjected to red quantum dot glue, green quantum dot glue, and according to the above-mentioned quantum dot layer patterning method, and Blue quantum dispensing is obtained.
  • the quantum dot color film is used in a display device whose backlight is blue light, and the organic transparent photoresist layer is formed corresponding to the blue sub-pixel region in the step 2.
  • the method for preparing the quantum dot color film further comprises: step 3, forming a blue light filter layer on the patterned red quantum dot layer and the patterned green quantum dot layer respectively.
  • the quantum dot color film is used in a display device whose backlight is ultraviolet light, and in the step 2, a patterned blue quantum dot layer is formed corresponding to the blue sub-pixel region.
  • the present invention provides a method for patterning a quantum dot layer and a method for preparing a quantum dot color film.
  • the photoresist layer having the pattern structure is used as a shielding layer, and the monochromatic quantum dot layer is etched to obtain a patterned quantum dot layer, which simplifies the formation of quantum dots.
  • the composition of the quantum dot glue of the layer, that is, the surface chemical environment of the quantum dot is simplified, thereby improving the luminous efficiency of the quantum dot, and the method can prepare a fine quantum dot pattern, thereby greatly improving the display of the patterned quantum dot layer.
  • the method for preparing the quantum dot color film of the present invention the quantum dot color film is prepared according to the above-mentioned quantum dot layer patterning method, and the prepared quantum dot color film has fine quantum dot pattern, and the quantum dot has high luminous efficiency. Further, the resolution of the display device and the backlight utilization rate are effectively improved.
  • FIG. 1 is a schematic flow chart of a method for patterning a quantum dot layer of the present invention
  • FIG. 3 is a schematic view showing a photoresist coated on a monochromatic quantum dot layer in step 2 of the method for patterning a quantum dot layer of the present invention
  • FIG. 4 is a schematic view showing exposure of a photoresist in step 2 of the method for patterning a quantum dot layer of the present invention
  • FIG. 5 is a schematic view showing development of a photoresist after exposure in step 2 of the method for patterning a quantum dot layer of the present invention
  • step 3 is a schematic diagram of step 3 of the method for patterning quantum dot layers of the present invention.
  • step 4 of the quantum dot layer patterning method of the present invention is a schematic diagram of step 4 of the quantum dot layer patterning method of the present invention.
  • Figure 8 is a schematic view showing the second step of the first embodiment of the method for preparing a quantum dot color film of the present invention.
  • Figure 9 is a schematic view showing the second step of the second embodiment of the method for preparing a quantum dot color film of the present invention.
  • Figure 10 is a schematic view showing the third step of the second embodiment of the method for producing a quantum dot color film of the present invention.
  • the present invention first provides a method for patterning a quantum dot layer, including the following steps:
  • Step 1 as shown in Figure 2, providing a substrate 10, a monochromatic quantum dot coating on the substrate 10, after curing, to obtain a monochromatic quantum dot layer 20;
  • the single color refers to various single colors such as red, green, or blue
  • the monochromatic quantum dot layer 20 emits monochromatic light of a corresponding color under light excitation, such as red light (wavelength is 630). - 690 nm), green light (wavelength of 500-560 nm), or blue light (wavelength of 430-480 nm).
  • the monochromatic quantum dot glue comprises a cured colloid and a monochromatic quantum dot mixed in the solidified colloid;
  • the cured colloid is a thermosetting adhesive or an ultraviolet curable adhesive, and correspondingly, in this step, heat curing is adopted. Or curing by UV curing;
  • the material of the monochromatic quantum dot contained in the monochromatic quantum dot glue comprises one or more of a group II-VI quantum dot material and a group I-III-VI quantum dot material; preferably, the single The material of the color quantum dots is one or more of CdSe, CdS, CdTe, ZnS, ZnSe, CuInS, and ZnCuInS.
  • the quantum dot layer 20 has a thickness of 1-50 ⁇ m;
  • Step 2 As shown in FIG. 3-5, a photoresist is coated on the monochromatic quantum dot layer 20 to form a photoresist film 3, and the photoresist film 3 is exposed, developed, and baked through the mask 50. Afterwards, the photoresist layer 30 is obtained;
  • Step 3 As shown in FIG. 6, the monochromatic quantum dot layer 20 is etched by using the photoresist layer 30 as a shielding layer, and the portion of the monochromatic quantum dot layer 20 that is not covered by the photoresist layer 30 is removed to obtain a pattern. Monochrome quantum dot layer 20'.
  • the monochromatic quantum dot layer 20 is etched by a dry etching method or a wet etching method.
  • the photoresist is a transparent material, and the photoresist layer 30 is formed.
  • the optical function of the monochromatic quantum dot layer 20' in the step 3 is not affected, so that it is not necessary to peel off the photoresist layer 30 at the end.
  • the photoresist may also be a non-transparent material
  • the method for patterning the quantum dot layer further includes: Step 4, using the stripping solution to remove the photoresist layer 30 from the pattern, as shown in FIG.
  • the monochromatic quantum dot layer 20' is peeled off.
  • the present invention further provides a method for preparing a quantum dot color film based on the above method for patterning a quantum dot layer, comprising the following steps:
  • Step 1 providing a substrate 10, the substrate 10 includes a red sub-pixel region, a green sub-pixel region, and a blue sub-pixel region;
  • Step 2 forming a patterned red quantum dot layer 21 corresponding to the red sub-pixel region on the substrate 10; forming a patterned green quantum dot layer 22 corresponding to the green sub-pixel region; corresponding to the blue sub- Forming a patterned blue quantum dot layer 23 or an organic transparent photoresist layer 24;
  • the patterned red quantum dot layer 21, the patterned green quantum dot layer 22, and the patterned blue quantum dot layer 23 adopt red quantum dot glue and green quantum dots according to the above-mentioned quantum dot layer patterning method. Glue, and blue quantum dot glue are obtained.
  • FIG. 8 is a first embodiment of a method for fabricating a quantum dot color film according to the present invention.
  • the quantum dot color film is used in a display device with a backlight for ultraviolet light, and the step 2 corresponds to the blue color.
  • the pixel region forms a patterned blue quantum dot layer 23.
  • FIG. 9 is a second embodiment of a method for fabricating a quantum dot color film according to the present invention.
  • the quantum dot color film is used in a display device with a backlight for blue light, and the blue sub-pixel corresponding to the step 2 is performed.
  • the region forms an organic transparent photoresist layer 24.
  • the method further includes: Step 3, forming a blue filter layer 31 on the patterned red quantum dot layer 21 and the patterned green quantum dot layer 22, respectively, for filtering without excitation Blu-ray.
  • the quantum dot color film prepared by the method for preparing the quantum dot color film of the invention can be used for the color filter in the current LCD display, and can be disposed on the side of the color film substrate in the display panel by a conventional structure, or the quantum The dot color film can also be formed on the side of the array substrate in the display panel.
  • This is a COA (Color Filter On Array) design, and the quantum dot display panel can be obtained by the quantum dot color film.
  • the quantum dot layer patterning method of the present invention sings a monochromatic quantum dot layer by using a photoresist layer having a patterned structure as a shielding layer to obtain a patterned quantum dot layer, which simplifies the method.
  • the composition of the quantum dot glue used to form the quantum dot layer that is, the surface chemical environment of the quantum dot is simplified, thereby improving the luminous efficiency of the quantum dot, and the method can prepare a fine quantum dot pattern, which greatly improves the patterning.
  • the preparation method of the color film is prepared according to the above-mentioned quantum dot layer patterning method, and the prepared quantum dot color film has fine quantum dot pattern, and the quantum dot has high luminous efficiency, thereby effectively improving the resolution of the display device. Rate, and backlight utilization.

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Abstract

一种量子点层图形化的方法及量子点彩膜的制备方法。量子点层图形化的方法包括在基板（10）上形成单色量子点层（20），利用光罩（50）在单色量子点层（20）上形成光阻层（30），以光阻层（30）为遮蔽层，对单色量子点层（20）进行刻蚀，剥离光阻层（30），简化了用于形成量子点层的量子点胶的组成成分，即简化量子点的表面化学环境，从而提高了量子点的发光效率，提高了图形化的量子点层的显示分辨率；根据量子点层图形化的方法制备量子点彩膜，具有精细的量子点图形，有效提高了显示装置的分辨率、及背光利用率。

Description

量子点层图形化的方法及量子点彩膜的制备方法 技术领域
本发明涉及显示技术领域，尤其涉及一种量子点层图形化的方法及量子点彩膜的制备方法。
背景技术
随着显示技术的不断发展，人们对显示装置的显示质量要求也越来越高。量子点(Quantum Dots，简称QDs)通常是由Ⅱ-Ⅵ、或Ⅲ-Ⅴ族元素组成的球形或类球形的半导体纳米微粒，粒径一般在几纳米至数十纳米之间。由于QDs的粒径尺寸小于或者接近相应体材料的激子波尔半径，会产生量子限域效应，其能级结构从体材料的准连续变为量子点材料的离散结构，导致QDs展示出特殊的受激辐射发光的性能。随着QDs的尺寸减小，其能级带隙增加，相应的QDs受激所需要的能量以及QDs受激后回到基态放出的能量都相应的增大，表现为QDs的激发与荧光光谱的“蓝移”现象，通过控制QDs的尺寸，使其发光光谱可以覆盖整个可见光区域。如硒化镉(CdSe)的尺寸从6.6nm减小至2.0nm，其发光波长从红光区域635nm“蓝移”至蓝光区域的460nm。
量子点材料具有发光光谱集中，色纯度高、且发光颜色可通过量子点材料的尺寸、结构或成分进行简易调节等优点，利用这些优点将其应用在显示装置中可有效地提升显示装置的色域及色彩还原能力。如专利CN 102944943A、及专利US20150002788A1均提出了用具有图案结构的量子点层替代彩色滤光膜(Color Filter)以达到彩色显示目的的技术方案，但是该些专利并未对量子点层图形化的方法进行说明。
专利CN103226260A提供了一种把量子点分散于光刻胶中，通过光刻工艺图形化量子点层的方法，但量子点分散于光刻胶中，由于光刻胶中具有起始剂(initiation)、聚合物单体(monomer)、聚合物(polymer)、添加剂(additive)等多种高分子材料，量子点的表面化学环境复杂，对量子点的发光效率影响很大。除上述方法以外，还可以通过转印、网印等方法来制作量子点图形，但是转印的方法所得到的量子点图形分辨率不高，图形边缘呈现锯齿状，并且量子点层与基体的黏着力有待提高；而喷墨打印形成图形化量子点层的方法对喷墨打印设备要求很高，如何保证喷墨墨滴的稳定性及打印精度仍有技术壁垒，仍不能大规模生产。
发明内容
本发明的目的在于提供一种量子点层图形化的方法，能够制备出精细的量子点图形，且该方法可以简化量子点的表面化学环境，从而提高量子点的发光效率。
本发明的目的还在于提供一种量子点彩膜的制备方法，能够制备出精细的量子点图形，且该方法可以简化量子点的表面化学环境，从而提高量子点的发光效率，进而有效提高显示装置的分辨率、及背光利用率。
为实现上述目的，本发明首先提供了一种量子点层图形化的方法，包括如下步骤：
步骤1、提供基板，将单色量子点胶涂布在基板上，经固化后，得到单色量子点层，所述单色量子点层在光激发下发出相应颜色的单色光；
步骤2、在单色量子点层上涂布光刻胶，形成一光刻胶薄膜，通过光罩对光刻胶薄膜进行曝光，显影、烘烤后，得到光阻层；
步骤3、以光阻层为遮蔽层，对单色量子点层进行刻蚀，去掉单色量子点层上没有被光阻层覆盖的部分，得到图形化的单色量子点层。
所述单色量子点胶包含固化胶体、及混合于固化胶体中的单色量子点；所述固化胶体为热固化胶、或紫外固化胶；所述步骤1中，采用热固化、或紫外固化的方式进行固化。
所述单色量子点胶包含的单色量子点的材料包括Ⅱ-Ⅵ族量子点材料、Ⅰ-Ⅲ-Ⅵ族量子点材料中的一种或多种。
所述单色量子点胶包含的单色量子点的材料包括CdSe、CdS、CdTe、ZnS、ZnSe、CuInS、ZnCuInS中的一种或多种。
所述单色量子点层的厚度为1-50μm；可选的，所述光刻胶为透明材料；所述步骤3中采用干法刻蚀法、或湿法刻蚀法对单色量子点层进行刻蚀。
可选的，所述光刻胶为非透明材料，所述的量子点层图形化的方法还包括：
步骤4，利用剥离液将所述光阻层从所述图形化的单色量子点层上剥离下来。
本发明还提供一种量子点彩膜的制备方法，包括如下步骤：
步骤1、提供基板，所述基板包括红色子像素区域、绿色子像素区域、及蓝色子像素区域；
步骤2、分别在所述基板上对应所述红色子像素区域形成图形化的红色量子点层；对应所述绿色子像素区域形成图形化的绿色量子点层；对应所 述蓝色子像素区域形成图形化的蓝色量子点层或有机透明光阻层；
所述图形化的红色量子点层、图形化的绿色量子点层、及图形化的蓝色量子点层根据上述量子点层图形化的方法并分别采用红色量子点胶、绿色量子点胶、及蓝色量子点胶得到。
可选的，所述量子点彩膜用于背光为蓝光的显示装置中，所述步骤2中对应所述蓝色子像素区域形成有机透明光阻层。
所述量子点彩膜的制备方法还包括：步骤3、分别在所述图形化的红色量子点层、及图形化的绿色量子点层上形成蓝光过滤层。
可选的，所述量子点彩膜用于背光为紫外光的显示装置中，所述步骤2中对应所述蓝色子像素区域形成图形化的蓝色量子点层。
本发明的有益效果：本发明提供了一种量子点层图形化的方法及量子点彩膜的制备方法。本发明的量子点层图形化的方法，利用具有图案结构的光阻层为遮蔽层，对单色量子点层进行刻蚀，得到图形化的量子点层，该方法简化了用于形成量子点层的量子点胶的组成成分，即简化量子点的表面化学环境，从而提高了量子点的发光效率，且该方法能够制备出精细的量子点图形，大大提高了图形化的量子点层的显示分辨率；本发明的量子点彩膜的制备方法，根据上述量子点层图形化的方法制备量子点彩膜，制备的量子点彩膜具有精细的量子点图形，且量子点的发光效率高，进而有效提高了显示装置的分辨率、及背光利用率。
附图说明
下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其他有益效果显而易见。
附图中，
图1为本发明的量子点层图形化的方法的流程示意图；
图2为本发明的量子点层图形化的方法的步骤1的示意图；
图3为本发明的量子点层图形化的方法的步骤2中在单色量子点层涂布光刻胶的示意图；
图4为本发明的量子点层图形化的方法的步骤2中对光刻胶进行曝光的示意图；
图5为本发明的量子点层图形化的方法的步骤2中对光刻胶曝光后进行显影的示意图；
图6为本发明的量子点层图形化的方法的步骤3的示意图；
图7为本发明的量子点层图形化的方法的步骤4的示意图；
图8为本发明的量子点彩膜的制备方法的第一实施例的步骤2的示意图；
图9为本发明的量子点彩膜的制备方法的第二实施例的步骤2的示意图；
图10为本发明的量子点彩膜的制备方法的第二实施例的步骤3的示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图1-7，本发明首先提供一种量子点层图形化的方法，包括如下步骤：
步骤1、如图2所示，提供基板10，将单色量子点胶涂布在基板10上，经固化后，得到单色量子点层20；
具体的，所述单色指的是红色、绿色、或蓝色等各种单色，所述单色量子点层20在光激发下发出相应颜色的单色光，如红光(波长为630-690nm)，绿光(波长为500-560nm)、或蓝光(波长为430-480nm)。
具体的，所述单色量子点胶包含固化胶体、及混合于固化胶体中的单色量子点；所述固化胶体为热固化胶、或紫外固化胶，相应的，该步骤中，采用热固化、或紫外固化的方式进行固化；
具体的，所述单色量子点胶包含的单色量子点的材料包括Ⅱ-Ⅵ族量子点材料、Ⅰ-Ⅲ-Ⅵ族量子点材料中的一种或多种；优选的，所述单色量子点的材料为CdSe、CdS、CdTe、ZnS、ZnSe、CuInS、ZnCuInS中的一种或多种。
具体的，所述量子点层20的厚度为1-50μm；
步骤2、如图3-5所示，在单色量子点层20上涂布光刻胶，形成一光刻胶薄膜3，通过光罩50对光刻胶薄膜3进行曝光，显影、烘烤后，得到光阻层30；
步骤3、如图6所示，以光阻层30为遮蔽层，对单色量子点层20进行刻蚀，去掉单色量子点层20上没有被光阻层30覆盖的部分，得到图形化的单色量子点层20’。
具体的，所述步骤3中采用干法刻蚀法、或湿法刻蚀法对单色量子点层20进行刻蚀。
具体的，所述步骤2中，所述光刻胶为透明材料，则形成的光阻层30 不会影响步骤3中单色量子点层20’的光学功能，因此最后不需要剥离所述光阻层30。
或者，所述光刻胶也可以为非透明材料，则所述量子点层图形化的方法还包括：步骤4，如图7所示，利用剥离液将所述光阻层30从所述图形化的单色量子点层20’上剥离下来。
请参阅图8至图10，基于上述量子点层图形化的方法，本发明还提供一种量子点彩膜的制备方法，包括如下步骤：
步骤1、提供基板10，所述基板10包括红色子像素区域、绿色子像素区域、及蓝色子像素区域；
步骤2、分别在所述基板10上对应所述红色子像素区域形成图形化的红色量子点层21；对应所述绿色子像素区域形成图形化的绿色量子点层22；对应所述蓝色子像素区域形成图形化的蓝色量子点层23或有机透明光阻层24；
所述图形化的红色量子点层21、图形化的绿色量子点层22、及图形化的蓝色量子点层23根据上述量子点层图形化的方法并分别采用红色量子点胶、绿色量子点胶、及蓝色量子点胶得到。
请参阅图8，为本发明的量子点彩膜的制备方法的第一实施例，所述量子点彩膜用于背光为紫外光的显示装置中，所述步骤2中对应所述蓝色子像素区域形成图形化的蓝色量子点层23。
请参阅图9，为本发明的量子点彩膜的制备方法的第二实施例，所述量子点彩膜用于背光为蓝光的显示装置中，所述步骤2中对应所述蓝色子像素区域形成有机透明光阻层24。进一步的，如图10所示，还可以包括：步骤3、分别在所述图形化的红色量子点层21、及图形化的绿色量子点层22上形成蓝光过滤层31，用于过滤没激发的蓝光。
本发明的量子点彩膜的制备方法所制得的量子点彩膜可以用于目前LCD显示器中的彩色滤光片，可采用常规结构置于显示面板中的彩膜基板一侧，或者该量子点彩膜也可以形成于显示面板中的阵列基板一侧，此为COA(Color filter On Array)设计，均可由此量子点彩膜获得量子点显示面板。
综上所述，本发明的量子点层图形化的方法，利用具有图案结构的光阻层为遮蔽层，对单色量子点层进行刻蚀，得到图形化的量子点层，该方法简化了用于形成量子点层的量子点胶的组成成分，即简化量子点的表面化学环境，从而提高了量子点的发光效率，且该方法能够制备出精细的量子点图形，大大提高了图形化的量子点层的显示分辨率；本发明的量子点 彩膜的制备方法，根据上述量子点层图形化的方法制备量子点彩膜，制备的量子点彩膜具有精细的量子点图形，且量子点的发光效率高，进而有效提高了显示装置的分辨率、及背光利用率。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (15)

  1. 一种量子点层图形化的方法，包括如下步骤：
    步骤1、提供基板，将单色量子点胶涂布在基板上，经固化后，得到单色量子点层，所述单色量子点层在光激发下发出相应颜色的单色光；
    步骤2、在单色量子点层上涂布光刻胶，形成一光刻胶薄膜，通过光罩对光刻胶薄膜进行曝光，显影、烘烤后，得到光阻层；
    步骤3、以光阻层为遮蔽层，对单色量子点层进行刻蚀，去掉单色量子点层上没有被光阻层覆盖的部分，得到图形化的单色量子点层。
  2. 如权利要求1所述的量子点层图形化的方法，其中，所述单色量子点胶包含固化胶体、及混合于固化胶体中的单色量子点；所述固化胶体为热固化胶、或紫外固化胶；所述步骤1中，采用热固化、或紫外固化的方式进行固化。
  3. 如权利要求2所述的量子点层图形化的方法，其中，所述单色量子点胶包含的单色量子点的材料包括Ⅱ-Ⅵ族量子点材料、与Ⅰ-Ⅲ-Ⅵ族量子点材料中的一种或多种。
  4. 如权利要求3所述的量子点层图形化的方法，其中，所述单色量子点胶包含的单色量子点的材料包括CdSe、CdS、CdTe、ZnS、ZnSe、CuInS、与ZnCuInS中的一种或多种。
  5. 如权利要求1所述的量子点层图形化的方法，其中，所述单色量子点层的厚度为1-50μm；所述光刻胶为透明材料，所述步骤3中采用干法刻蚀法、或湿法刻蚀法对单色量子点层进行刻蚀。
  6. 如权利要求1所述的量子点层图形化的方法，其中，所述光刻胶为非透明材料，所述量子点层图形化的方法还包括：
    步骤4，利用剥离液将所述光阻层从所述图形化的单色量子点层上剥离下来。
  7. 一种量子点彩膜的制备方法，包括如下步骤：
    步骤1、提供基板，所述基板包括红色子像素区域、绿色子像素区域、及蓝色子像素区域；
    步骤2、分别在所述基板上对应所述红色子像素区域形成图形化的红色量子点层；对应所述绿色子像素区域形成图形化的绿色量子点层；对应所述蓝色子像素区域形成图形化的蓝色量子点层或有机透明光阻层；
    所述图形化的红色量子点层、图形化的绿色量子点层、及图形化的蓝 色量子点层分别采用红色量子点胶、绿色量子点胶、及蓝色量子点胶得到；
    所述图形化的红色量子点层、图形化的绿色量子点层、及图形化的蓝色量子点层的图形化方法包括如下步骤：
    步骤1’、提供基板，将单色量子点胶涂布在基板上，经固化后，得到单色量子点层，所述单色量子点层在光激发下发出相应颜色的单色光；
    步骤2’、在单色量子点层上涂布光刻胶，形成一光刻胶薄膜，通过光罩对光刻胶薄膜进行曝光，显影、烘烤后，得到光阻层；
    步骤3’、以光阻层为遮蔽层，对单色量子点层进行刻蚀，去掉单色量子点层上没有被光阻层覆盖的部分，得到图形化的单色量子点层。
  8. 如权利要求7所述的量子点彩膜的制备方法，其中，所述单色量子点胶包含固化胶体、及混合于固化胶体中的单色量子点；所述固化胶体为热固化胶、或紫外固化胶；所述步骤1’中，采用热固化、或紫外固化的方式进行固化。
  9. 如权利要求8所述的量子点彩膜的制备方法，其中，所述单色量子点胶包含的单色量子点的材料包括Ⅱ-Ⅵ族量子点材料、与Ⅰ-Ⅲ-Ⅵ族量子点材料中的一种或多种。
  10. 如权利要求9所述的量子点彩膜的制备方法，其中，所述单色量子点胶包含的单色量子点的材料包括CdSe、CdS、CdTe、ZnS、ZnSe、CuInS、与ZnCuInS中的一种或多种。
  11. 如权利要求7所述的量子点彩膜的制备方法，其中，所述单色量子点层的厚度为1-50μm；所述光刻胶为透明材料，所述步骤3’中采用干法刻蚀法、或湿法刻蚀法对单色量子点层进行刻蚀。
  12. 如权利要求7所述的量子点彩膜的制备方法，其中，所述光刻胶为非透明材料，所述量子点层图形化的方法还包括：
    步骤4’，利用剥离液将所述光阻层从所述图形化的单色量子点层上剥离下来。
  13. 如权利要求7所述的量子点彩膜的制备方法，其中，所述量子点彩膜用于背光为蓝光的显示装置中，所述步骤2中对应所述蓝色子像素区域形成有机透明光阻层。
  14. 如权利要求13所述的量子点彩膜的制备方法，还包括：步骤3、分别在所述图形化的红色量子点层、及图形化的绿色量子点层上形成蓝光过滤层。
  15. 如权利要求7所述的量子点彩膜的制备方法，其中，所述量子点彩膜用于背光为紫外光的显示装置中，所述步骤2中对应所述蓝色子像素 区域形成图形化的蓝色量子点层。
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