WO2017043899A1 - Procédé de cristallisation de silicium amorphe au moyen d'un plasma - Google Patents

Procédé de cristallisation de silicium amorphe au moyen d'un plasma Download PDF

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Publication number
WO2017043899A1
WO2017043899A1 PCT/KR2016/010121 KR2016010121W WO2017043899A1 WO 2017043899 A1 WO2017043899 A1 WO 2017043899A1 KR 2016010121 W KR2016010121 W KR 2016010121W WO 2017043899 A1 WO2017043899 A1 WO 2017043899A1
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Prior art keywords
amorphous silicon
plasma
substrate
crystallization
silicon layer
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PCT/KR2016/010121
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English (en)
Korean (ko)
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박종배
김영우
김대철
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한국기초과학지원연구원
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Publication of WO2017043899A1 publication Critical patent/WO2017043899A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

Definitions

  • the present invention relates to a method for producing polycrystalline silicon by crystallizing amorphous silicon using plasma.
  • Transistor devices using polycrystalline silicon are mostly used in active devices of active matrix liquid crystal displays (AMLCDs) and switching devices and peripheral circuits of electro-luminescence devices.
  • the polycrystalline silicon used as the semiconductor active layer can be roughly divided into a method of obtaining direct polycrystalline silicon by plasma chemical vapor deposition and a method of obtaining polycrystalline silicon by heat treatment after deposition of amorphous silicon.
  • direct deposition there is an advantage in that the polycrystalline silicon thin film can be obtained at a relatively low temperature, but there is a disadvantage in that the characteristics of the thin film are not good. Therefore, a widely used method is a method of obtaining an amorphous silicon thin film on a substrate and then crystallizing through heat treatment to obtain a high quality polycrystalline silicon thin film.
  • Crystallization of the amorphous silicon thin film includes a laser method (Excimer Laser Annealing (ELA)) and a solid phase crystallization method (Solid Phase Crystallization (SPC)).
  • ELA Excimer Laser Annealing
  • SPC Solid Phase Crystallization
  • the crystallization method using a laser is a method of recrystallizing an amorphous silicon thin film by laser beam irradiation, so that a polycrystalline silicon thin film having excellent characteristics can be manufactured. There are many problems in production.
  • a solid crystallization method for producing a polycrystalline silicon thin film by heat-treating the amorphous silicon thin film for a long time ( ⁇ 20 hours) at a high temperature of 600 °C or more requires a relatively simple crystallization method, high crystallization temperature and long heat treatment time.
  • there are many defects in the crystallized grain which makes it difficult to manufacture the device.
  • the present invention provides a novel crystallization method that can overcome the above problems of the prior art.
  • the present invention is a method of crystallizing amorphous silicon by injecting electrons in a plasma into an amorphous silicon layer to raise the substrate to a temperature required for crystallization within a few tens of seconds, and has not been used in the past without expensive equipment such as a laser. It's a whole new technology.
  • the present invention provides an amorphous silicon layer on a substrate in a chamber capable of generating a plasma, and generates a plasma to expose the amorphous silicon layer to the plasma while applying a positive pulse voltage to the substrate. It relates to a method of crystallizing amorphous silicon, including.
  • the plasma may preferably be hydrogen, helium or a mixed gas thereof, but the scope of the present invention is not limited to a specific gas.
  • the current density to the substrate is characterized in that more than 0.15 A / cm 2 .
  • the plasma is helium is characterized in that the current density to the substrate is 0.11 A / cm 2 or more. Under conditions of current density below that, it is predicted that there is not enough energy delivered for crystallization.
  • a chamber comprising means for generating a plasma; A substrate located in the chamber and exposed to plasma by the plasma generating means, wherein the substrate is deposited by an amorphous silicon substrate; And pulse applying means configured to apply a pulse positive voltage to one surface of the substrate.
  • the chamber is characterized in that it further comprises amorphous silicon deposition means.
  • the present invention is a method of crystallizing amorphous silicon, and can form a very uniform large area polycrystalline silicon layer at a low price.
  • the present invention is characterized in that amorphous silicon deposition and crystallization of deposited amorphous silicon can be achieved in the same chamber.
  • FIG. 1 is a flowchart illustrating a method of crystallizing amorphous silicon according to an embodiment of the present invention.
  • FIG. 2 is a schematic diagram of a crystallization apparatus according to an embodiment of the present invention.
  • Example 3 shows Raman results of an amorphous silicon layer before crystallization and a polycrystalline silicon layer according to Example 1 of the present invention.
  • FIG. 6 is a TEM result of a silicon layer crystallized according to Example 1.
  • FIG. 1 is a flowchart illustrating a method of crystallizing amorphous silicon according to an embodiment of the present invention.
  • the method of the present invention comprises the steps of placing the substrate in a chamber (S1); Depositing an amorphous silicon layer (S2); Generating a plasma on the amorphous silicon layer (S3); And applying a pulse positive voltage to the substrate (S4).
  • FIG. 2 is a schematic diagram of a crystallization apparatus according to an embodiment of the present invention.
  • a substantially flat substrate 120 is prepared.
  • the substrate 120 may be, for example, any one selected from glass, ceramic, polymer, metal, and equivalents thereof, but the present invention is not limited thereto, but the pulse positive voltage is not limited thereto. It can be used as long as it is a substrate that can be applied to attract electrons in the plasma.
  • an amorphous silicon layer 130 is deposited on the substrate. That is, an amorphous silicon layer is deposited on the substrate in a vertical direction by, for example, plasma enhanced chemical vapor deposition (PECVD).
  • PECVD plasma enhanced chemical vapor deposition
  • the amorphous silicon layer may be deposited by a sputter or an evaporator in addition to PECVD, and the present invention is not limited to this deposition method.
  • a plasma is generated in the chamber and the amorphous silicon layer is exposed to the plasma.
  • the generation source of the plasma may be, for example, RF plasma, DC plasma, or electromagnetic plasma, but is not particularly limited thereto.
  • a positive voltage is applied to the chamber in a pulsed manner to inject electrons in the plasma into the amorphous silicon layer to crystallize the amorphous silicon layer.
  • Pulse positive voltage application and plasma generation may be simultaneously generated, and pulse positive voltage application may be prioritized or plasma generation may be prioritized.
  • a substrate on which amorphous silicon is deposited is placed in a chamber as illustrated in FIG. 2, and a pulse voltage is applied to the substrate under a pulse voltage condition as described below while generating a plasma in the chamber using a plasma generation condition as follows.
  • a pulse voltage is applied to the substrate under a pulse voltage condition as described below while generating a plasma in the chamber using a plasma generation condition as follows.
  • 3 shows Raman results of an amorphous silicon layer before crystallization and a polycrystalline silicon layer according to Example 1 of the present invention.
  • 3 is a Raman result of an amorphous silicon layer before crystallization
  • a graph corresponding to 'post annealing' is a Raman result of a crystallized polycrystalline silicon layer according to the present invention, 'Is the Raman result of polycrystalline silicon as a reference graph.
  • the crystallization method according to the present invention can provide polycrystalline silicon.
  • a substrate in which amorphous silicon is deposited is placed in a chamber as illustrated in FIG. 2, and plasma is generated in the chamber using a plasma generation condition as described below, and the current density of the substrate is changed. As a result, it is shown in FIG.
  • Figure 4a is a Raman result showing the degree of crystallization according to the pulse voltage.
  • 4b is an XRD result showing the degree of crystallization according to the pulse voltage.
  • crystallization was not performed when the substrate current density was 0.117 A / cm 2 , but crystallization was performed when the substrate current density was 0.156 A / cm 2 .
  • FIG. 4B when the substrate current density is 0.156 A / cm 2 , it can be seen that various peaks exist depending on the direction of the silicon crystal, and thus crystallization is performed.
  • a substrate in which amorphous silicon is deposited is placed in a chamber as illustrated in FIG. 2, and plasma is generated in the chamber using a plasma generation condition as described below, and the current density of the substrate is changed. As a result, it is shown in FIG.
  • 5A is a Raman result showing the degree of crystallization according to the pulse voltage.
  • 5b is an XRD result showing the degree of crystallization according to the pulse voltage.
  • crystallization was not performed when the substrate current density was 0.078 A / cm 2 , but crystallization was performed when the substrate current density was 0.117 A / cm 2 .
  • FIG. 4B when the substrate current density is 0.117 A / cm 2 , it can be seen that various peaks exist depending on the direction of the silicon crystal, and thus crystallization is performed.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

La présente invention concerne un procédé de cristallisation de silicium amorphe, consistant à : préparer une couche de silicium amorphe sur un substrat à l'intérieur d'une chambre capable de générer un plasma ; et exposer la couche de silicium amorphe au plasma par la génération du plasma tout en appliquant une tension positive pulsée sur le substrat.
PCT/KR2016/010121 2015-09-08 2016-09-08 Procédé de cristallisation de silicium amorphe au moyen d'un plasma WO2017043899A1 (fr)

Applications Claiming Priority (2)

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KR1020150126773A KR101744006B1 (ko) 2015-09-08 2015-09-08 플라즈마에 의한 비정질 실리콘의 결정화 방법
KR10-2015-0126773 2015-09-08

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WO2017043899A1 true WO2017043899A1 (fr) 2017-03-16

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KR102011456B1 (ko) 2018-01-26 2019-08-16 한국표준과학연구원 결정화된 반도체 입자의 증착을 위한 반도체 소자 제조 장치 및 방법

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6335535B1 (en) * 1998-06-26 2002-01-01 Nissin Electric Co., Ltd Method for implanting negative hydrogen ion and implanting apparatus
US20110039034A1 (en) * 2009-08-11 2011-02-17 Helen Maynard Pulsed deposition and recrystallization and tandem solar cell design utilizing crystallized/amorphous material
KR20130125095A (ko) * 2012-05-08 2013-11-18 한국과학기술연구원 비정질 반도체 박막의 결정화 장치 및 그 방법
KR20140058700A (ko) * 2012-10-30 2014-05-15 한국생산기술연구원 플라즈마 화학기상 증착법으로 형성된 수소화된 비정질 실리콘 박막의 전자빔을 이용한 결정화방법, 이에 의한 다결정 실리콘 박막 태양전지의 제조방법 및 다결정 실리콘 박막 태양전지

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6335535B1 (en) * 1998-06-26 2002-01-01 Nissin Electric Co., Ltd Method for implanting negative hydrogen ion and implanting apparatus
US20110039034A1 (en) * 2009-08-11 2011-02-17 Helen Maynard Pulsed deposition and recrystallization and tandem solar cell design utilizing crystallized/amorphous material
KR20130125095A (ko) * 2012-05-08 2013-11-18 한국과학기술연구원 비정질 반도체 박막의 결정화 장치 및 그 방법
KR20140058700A (ko) * 2012-10-30 2014-05-15 한국생산기술연구원 플라즈마 화학기상 증착법으로 형성된 수소화된 비정질 실리콘 박막의 전자빔을 이용한 결정화방법, 이에 의한 다결정 실리콘 박막 태양전지의 제조방법 및 다결정 실리콘 박막 태양전지

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
KIM, CHANGHEON ET AL.: "Ultrafast Crystallization of Amorphous Silicon Thin Films by Using an Electron Beam Annealing Method", JOURNAL OF THE KOREAN PHYSICAL SOCIETY, vol. 64, no. 8, April 2014 (2014-04-01), pages 1091 - 1095, XP035315273 *

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KR20170029772A (ko) 2017-03-16

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