WO2017032763A1 - Dispositif et procédé d'usinage d'un substrat semiconducteur au moyen d'un rayonnement laser - Google Patents

Dispositif et procédé d'usinage d'un substrat semiconducteur au moyen d'un rayonnement laser Download PDF

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Publication number
WO2017032763A1
WO2017032763A1 PCT/EP2016/069867 EP2016069867W WO2017032763A1 WO 2017032763 A1 WO2017032763 A1 WO 2017032763A1 EP 2016069867 W EP2016069867 W EP 2016069867W WO 2017032763 A1 WO2017032763 A1 WO 2017032763A1
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WO
WIPO (PCT)
Prior art keywords
laser radiation
conditioning
semiconductor substrate
processing
laser
Prior art date
Application number
PCT/EP2016/069867
Other languages
German (de)
English (en)
Inventor
Jan Nekarda
Andreas Brand
Martin Graf
Original Assignee
Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e. V.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e. V. filed Critical Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e. V.
Publication of WO2017032763A1 publication Critical patent/WO2017032763A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/0604—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams
    • B23K26/0608—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams in the same heat affected zone [HAZ]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/361—Removing material for deburring or mechanical trimming
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02686—Pulsed laser beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02691—Scanning of a beam
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting

Definitions

  • the invention relates to a device and a method for processing a semiconductor substrate according to the preambles of claims 1 and 1 second
  • a semiconductor substrate in particular a Halbleitersu bstrats in the manufacture of a photovoltaic solar cell
  • different types of processing can be achieved:
  • an ablation of layers and / or partial areas of the semiconductor substrate can be effected by the laser radiation.
  • an entry of substances, in particular of dopants and / or an electrical contacting can take place.
  • a U crystallization of a near-surface region by the local application of laser radiation is possible.
  • the present invention is therefore based on the object of developing previously known methods for processing a semiconductor substrate by means of local application of laser radiation in order to achieve a higher process reliability and / or to enable a shortening of the process duration.
  • This object is achieved by a method according to claim 1 and by a device according to claim 12.
  • Advantageous embodiments can be found in the dependent claims.
  • the method according to the invention is advantageously designed for implementation by means of the device according to the invention, in particular a preferred embodiment thereof.
  • the device according to the invention is preferably designed for implementation by means of the method according to the invention, in particular an advantageous embodiment thereof.
  • semiconductor substrate refers to a substrate which has at least one semiconductor layer
  • a semiconductor substrate may be a semiconductor wafer, in particular a silicon wafer
  • the semiconductor substrate may consist of a substrate having at least one semiconductor layer, for example one coated with a semiconductor layer
  • one or more additional layers can be encompassed by the semiconductor substrate, which layers can in particular be further semiconductor layers, dielectric layers, metallic layers and combinations thereof.
  • the semiconductor substrate is subjected to processing in a laser processing step locally in a processing area by means of processing laser radiation of a processing laser radiation source.
  • the semiconductor substrate is exposed in a conditioning area by means of conditioning laser radiation of a conditioning laser radiation source with an illumination intensity greater than 50,000 W / m 2 .
  • the illumination intensity refers to the intensity of the conditioning radiation on the surface of the semiconductor substrate, which is exposed to the conditioning radiation.
  • the invention is based on the knowledge that exposure of the semiconductor substrate with conditioning radiation by means of a separate conditioning laser radiation source to the processing laser radiation source has considerable advantages: the conditioning radiation causes at least in the conditioning area a heating and / or an increase in the free charge carrier density achieved. In typical processes, it is advantageous for an elevated temperature to be present in the processing area in which the semiconductor substrate is processed with the processing laser radiation and / or an increased density of free charge carriers.
  • the semiconductor substrate is preferably with an intensity greater than 1 00,000 W / m 2 , in particular greater
  • the semiconductor substrate is preferably applied in the conditioning area by means of conditioning laser radiation of the conditioning laser radiation source for a time greater than 0.1 s, in particular in the range from 0.01 s to 2 s, in particular in the range from 0.1 s to 1 s To ensure sufficient conditioning at the beginning of local laser processing.
  • the conditioning area preferably completely covers the processing area, in particular the conditioning area preferably projects at least over the processing area, preferably circumferentially, in an advantageous manner
  • the conditioning area In typical processing of a semiconductor substrate by means of local treatment with processing laser radiation, a laser beam of the processing laser radiation source is moved over the surface of the semiconductor substrate and / or a plurality of local areas of the semiconductor substrate are successively exposed to the processing laser radiation. In this case, it is advantageous for the conditioning area to cover a large area of the semiconductor substrate. In particular, it is advantageous that the conditioning region extends over the entire width of the semiconductor wafer, preferably that the conditioning region transverse to the extension across the width of the semiconductor wafer has a length of at least 0.01 cm, preferably at least 0.1 cm, in particular at least 1 cm. H hereby is given a large-scale conditioning of the semiconductor substrate. Depending on in which areas a local processing by means of the processing laser radiation, the processing area can be moved relative to the photovoltaic solar cell to always ensure a conditioning in the processing area.
  • the conditioning region extends over the entire semiconductor substrate.
  • the semiconductor substrate is thus exposed to the entire surface of the conditioning laser radiation. This ensures conditioning of the entire semiconductor substrate so that optimized process conditions are always available irrespective of which local areas are processed by means of processing laser radiation.
  • the semiconductor substrate is exposed to processing laser radiation on a processing side and to the conditioning laser radiation on this processing side.
  • the application is thus effected both with treatment laser radiation and with conditioning laser radiation from the same side.
  • the semiconductor substrate is disposed on a processing side with the processing laser radiation and on a substrate. opposite conditioning side acted upon by the conditioning laser radiation.
  • the application of treatment laser radiation on the one hand and conditioning laser radiation on the other hand takes place from two opposite sides of the semiconductor substrate.
  • this has the constructive advantage that the optical components for imaging the processing laser radiation on the one hand and the conditioning laser radiation on the other can be optimized and positioned without limiting the spatial arrangement of the processing laser radiation optical means by the spatial arrangement of the conditioning laser radiation optical means is.
  • H hereby can be achieved in particular in a structurally simple manner, a homogeneous design and loading of the semiconductor substrate with the conditioning laser radiation, in particular a full-area, homogeneous loading.
  • the semiconductor wafer is arranged on a support which is transparent to the conditioning laser radiation and for the conditioning laser radiation to be applied through the support.
  • the method according to the invention can be used in particular for one or more of the following methods: a generating of local electrical contacts by local melting by means of the processing laser radiation (hereinafter "LFC");
  • via vias that penetrate the semiconductor wafer
  • doping c introduction of dopant by local melting of the semiconductor substrate by means of the processing laser radiation
  • the method enables, in particular, two advantageous conditionings for processing the semiconductor substrate by means of the processing laser radiation, it being possible to achieve the two conditions alternatively or jointly:
  • At least heating of the semiconductor substrate for processing by means of the processing laser radiation is advantageous.
  • further elevated temperatures are advantageous, so that advantageously by applying the conditioning radiation, the semiconductor substrate at least in the conditioning region, preferably the entire semiconductor substrate, to a temperature of at least 200 ° C, in particular at least 300 ° C is heated.
  • heating to the indicated temperatures at least in the conditioning region preferably heating of the entire semiconductor substrate, in particular heating of the entire solar cell, is advantageous:
  • Doping to at least 400 ° C, preferably to a temperature in the
  • processing laser radiation sources having a wavelength in the range of 300 nm to 600 nm are used in order to achieve high processing efficiency.
  • laser radiation sources for laser beams in the aforementioned wavelength range represent cost-intensive elements of a corresponding processing device.
  • the processing laser radiation source can also be processed with laser radiation having a wavelength greater than 500 nm, in particular greater than 1000 nm, preferably greater than 2000 nm are used.
  • laser beam sources are less expensive (especially IR laser with a wavelength in the range 1000 nm to 1200 nm), so that in spite of the additional provision of an additional conditioning laser radiation source, a cost saving is possible. It is therefore particularly advantageous, by means of the conditioning laser radiation at least in the conditioning region, to generate a free charge carrier density greater than 1 ⁇ 10 16 cm -3 , in particular greater than 1 ⁇ 110 17 cm -3 .
  • the free carrier density is increased in order to increase the absorption of the processing laser radiation as described above, but that the temperature of the semiconductor substrate does not exceed a predetermined temperature to negative influences on the semiconductor substrate, in particular on the electronic Quality of the semiconductor substrate to avoid due to excessive heating.
  • the active cooling can be done by blowing by means of a cooling gas or ambient air, preferably cooled ambient air.
  • cooling can be effected by spraying and / or wetting the semiconductor substrate with cooling liquid.
  • an active cooling by an indirect or preferably immediate thermal contact of the solar cell with a cooling block, which is actively cooled take place.
  • a cooling block may in particular be formed in a manner known per se for the planar application of the photovoltaic solar cell to the cooling block and particularly preferably for sucking the solar cell to the cooling block in order to form a good thermal contact between the solar cell and the cooling block.
  • the cooling block can in itself have active cooling or be actively cooled by means of flow of a cooling medium, in particular a cooling liquid.
  • Processing operations in which an active cooling of the photovoltaic solar cell advantageously takes place at least during the application of the conditioning laser radiation to the semiconductor substrate are, in particular, LFC.
  • the conditioning laser radiation in the semiconductor substrate at least in the conditioning region, preferably in the entire semiconductor substrate, to have a free carrier density of at least 1 ⁇ 10 16 cm -3 , in particular at least 1 ⁇ 10 17 cm "3 causes.
  • a processing laser radiation with a wavelength greater than 1000 nm, in particular greater than 2000 nm.
  • a combination of a charge carrier density of at least 1 ⁇ 10 16 cm -3 in combination with a processing laser radiation having a wavelength greater than 2000 nm or a combination of a carrier density of at least 1 ⁇ 10 17 cm -3 in combination with a treatment laser radiation having a wavelength greater than 1000 nm is advantageous.
  • the conditioning laser radiation is preferably in a wavelength range 400 nm to 1200 nm. If only heating of the semiconductor substrate, but not or only slightly increasing the free carrier density is desired, a Kondition einslaserstrahlungs- source can be selected with a wavelength range which is not or only slightly absorbed by the semiconductor substrate.
  • the wavelength range of the processing laser radiation source is in the range of 900 to 1200 nm.
  • the semiconductor substrate has a conditioning-laser-absorbing layer, such as a metallized back surface in typical solar cells, it is possible to apply conditioning laser radiation to the photovoltaic solar cell from the opposite side of the aforementioned absorbent layer from the semiconductor substrate. so that the Kond ition istslaserstrahlung wholly or at least substantially from the absorbing for the conditioning laser radiation layer (in particular a metallic layer) is absorbed and thus the photovoltaic solar cell is substantially heated and not or only slightly free charge carriers are generated by absorption of the conditioning laser radiation.
  • the device according to the invention for processing a semiconductor substrate by means of a laser, in particular for producing a photovoltaic solar cell has a processing laser radiation source for local application of processing laser radiation to the semiconductor substrate.
  • the device can be designed in a manner known per se.
  • the device has means for a relative movement between the photovoltaic solar cell and the processing laser radiation.
  • Such means may be mechanical means for moving the photovoltaic solar cell and / or optical means for imaging the processing laser radiation to a desired processing location on the photovoltaic solar cell, in particular moving and / or rotating and / or tiltable deflecting mirrors in the beam path of the processing laser radiation.
  • the device has, in addition to the processing laser radiation source, a conditioning laser radiation source for applying conditioning laser radiation to the semiconductor substrate, an illumination intensity greater than 50,000 W / m 2 .
  • the conditioning laser radiation source is preferably designed as a diode laser, in particular as an array comprising a plurality of diode lasers.
  • Diode lasers have the advantage that a space-saving design, compared to other laser sources, is possible.
  • a simple control takes place via the corresponding supplied electrical power, so that the conditioning laser radiation can be switched on and off in particular at high cycle rates and / or readjusted during the process.
  • the use of a Meh number of lasers, in particular a plurality of diode lasers has the advantage that in a simple and cost-effective manner, a planar illumination of a conditioning area, in particular a flat illumination of the entire photovoltaic solar cell is possible.
  • a plurality of laser diodes is arranged as an array, in particular with at least 2 columns and at least 1 row.
  • the conditioning laser radiation source preferably has a wavelength in the range of 400 nm to 1200 nm, in particular in the range 600 nm to 900 nm, this results in the aforementioned advantages, depending on the application, in particular the wavelength ranges mentioned in the method advantageously, advantageously by a corresponding Design of conditioning laser radiation source, guaranteed.
  • the device has an active cooling for active cooling of the semiconductor substrate. This can be designed as described above.
  • the device has a holder for the semiconductor substrate and the holder is actively cooled in order to effect an active cooling of the photovoltaic solar cell by means of thermal contact between the holder and the photovoltaic solar cell.
  • the device has a holder for the semiconductor substrate, which is made transparent for the conditioning laser radiation.
  • the holder is hereby arranged in the beam path of the conditioning laser radiation between condition laserlaserstrahlungsttle and semiconductor substrate.
  • the photovoltaic solar cell it is thus possible for the photovoltaic solar cell to be acted upon by means of conditioning laser radiation through the holder.
  • This results in the advantage that machining of the side of the semiconductor substrate opposite the holder by means of processing laser radiation is possible without components of the conditioning laser radiation source or optical means for imaging the conditioning laser radiation having to be arranged in the beam path between the processing laser radiation source and the photovoltaic solar cell.
  • Figure 1 shows a first embodiment of a device according to the invention, in which treatment laser radiation source and conditioning laser radiation source are arranged on the same side of a photovoltaic solar cell to be processed, and
  • FIG. 2 shows a second exemplary embodiment, in which the conditioning laser radiation source and the processing laser radiation source are arranged on opposite sides of the solar cell.
  • FIG. 1 shows a first exemplary embodiment of a device according to the invention for processing a semiconductor substrate by means of a laser.
  • the device has a processing laser radiation source 1, which is designed as a pulsed I R laser.
  • a processing laser radiation source 1 which is designed as a pulsed I R laser.
  • the processing laser radiation source 1 is associated with a processing deflection unit 1 a, which serves for deflecting a laser beam generated by the processing laser radiation source 1 at any point of a solar cell 2 to be processed.
  • a machining laser beam 1b is provided which impinges on one of a plurality of successively to be processed points on the front side of the solar cell 2.
  • the processing laser radiation source generates laser radiation having a wavelength of 1030 nm.
  • the apparatus shown in FIG. 1 additionally has a conditioning laser radiation source 3.
  • This is designed as a diode laser.
  • the conditioning laser radiation source 3 can be assigned an optical system 3a as an optical means in order to subject a front side of the photovoltaic solar cell 2 to a planar and homogeneous conditioning laser radiation 3b.
  • the conditioning laser radiation source 3 and the optical lens 3a are designed cooperatively such that the conditioning laser radiation impinges on the surface of the solar cell 2 with an illumination intensity of approximately 100,000 W / m 2 .
  • excess charge carriers are generated in the solar cell 2 and, moreover, the solar cell is heated to a temperature of approximately 350 ° C.
  • the solar cell 2 is arranged on a holder 4 of the device.
  • a slight heat conduction between the solar cell 2 and the holder 4 is desired, since by means of the conditioning laser radiation 3b, in particular re heating of the solar cell 2 should take place.
  • the holder 4 holding pins on soft the solar cell 2 rests on the back, so that only one compared to the back surface of the solar cell 2 comparatively small contact area between the solar cell 2 and holder 4 and a correspondingly comparatively low thermal contact exists.
  • the holder 4 may be formed from a thermally insulating material and / or be coated on the side facing the solar cell 2 with a thermally insulating layer.
  • the following preferred embodiments of a method according to the invention can be carried out in particular: a. Generation of local electrical contacts by local melting by means of the processing laser radiation (wavelength 1000 nm to 1200 nm).
  • An increased semiconductor substrate temperature by the conditioning laser (wavelength of 700 nm to 900 nm) increases the melting efficiency and by a slower cooling of the melt after processing, the crystallinity is increased and the formation of a local high doping in the contact area is improved.
  • a conditioning radiation with a wavelength of 700 to 900 nm leads to an increase in the wafer temperature. This increases the material removal rate and thus the drilling efficiency. The increased semiconductor substrate temperature additionally reduces the recrystallization damage at the edges of the vias due to a slower cooling rate.
  • a conditioning radiation with a wavelength of 700 to 900 nm leads to an increase in the wafer temperature. Increasing the temperature improves diffusion of the dopant in the semiconductor substrate, and possible damage to the material may recrystallize due to slower cooling ramps.
  • FIG. 2 shows a second exemplary embodiment of a device according to the invention.
  • This device also has a processing laser radiation source 1 and a processing deflection unit 1 a in order to successively image a processing laser beam 1 b onto a plurality of predetermined location points on a front side of a solar cell 2.
  • a conditioning laser radiation source 3 ' is arranged on the side of the solar cell 2 opposite the treatment laser radiation source 1.
  • the conditioning laser radiation source 3 ' is formed as an array of semiconductor diode lasers, so that the semiconductor lasers are arranged on the crossing points of a square grid with square base elements. In plan view from above, the array has an area of about 1 5 ⁇ 1 5 cm 2 . In this way, a comparatively homogeneous, areal conditioning laser radiation 3b 'is generated by the plurality of semiconductor laser diodes.
  • the solar cell 2 is arranged on a holder 4 'which is transparent to the conditioning laser radiation - with a wavelength of 808 nm, so that the conditioning laser radiation penetrates the holder 4' and impinges on the solar cell 2 at the back.
  • the solar cell 2 already has a metallization over the full area or approximately over the entire area, so that the conditioning laser radiation 3b 'does not or only slightly penetrates into a semiconductor solar cell 2 and thus substantially heating of the solar cell 2 takes place and no or only a slight generation of free solar cells Load carriers in the solar cell 2 is due to absorption of the conditioning laser radiation 3b 'in the semiconductor substrate of the solar cell 2.
  • the device according to FIG. 1 has an actively cooled holder 4, on which the solar cell 2 rests flat on the back, so that there is good thermal contact between solar cell 2 and holder 4.
  • the holder 4 has for this purpose lines for ahariflü liquid, which is supplied cooled by an external cooling unit.
  • the holder 4 is essentially made of metal, in particular of copper, and thus has a large thermal mass and a high thermal conductivity.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Electromagnetism (AREA)
  • Laser Beam Processing (AREA)

Abstract

L'invention concerne un procédé d'usinage d'un substrat semiconducteur, notamment d'un substrat semiconducteur pour la fabrication d'une cellule solaire photovoltaïque, comprenant une étape d'usinage au laser, le substrat semiconducteur étant exposé à une source de rayonnement laser d'usinage dans une zone d'usinage au moyen d'un rayonnement laser d'usinage. L'invention est caractérisée en ce que, avant et/ou pendant l'étape d'usinage au laser, le substrat semiconducteur est exposé à une source de rayonnement laser de conditionnement à une intensité d'éclairage supérieure à 50 000 W/m2 dans une zone de conditionnement au moyen d'un rayonnement laser de conditionnement.
PCT/EP2016/069867 2015-08-27 2016-08-23 Dispositif et procédé d'usinage d'un substrat semiconducteur au moyen d'un rayonnement laser WO2017032763A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102015114240.6 2015-08-27
DE102015114240.6A DE102015114240A1 (de) 2015-08-27 2015-08-27 Vorrichtung und Verfahren zur Bearbeitung eines Halbleitersubstrats mittels Laserstrahlung

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WO2017032763A1 true WO2017032763A1 (fr) 2017-03-02

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WO (1) WO2017032763A1 (fr)

Citations (9)

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DE10046170A1 (de) 2000-09-19 2002-04-04 Fraunhofer Ges Forschung Verfahren zur Herstellung eines Halbleiter-Metallkontaktes durch eine dielektrische Schicht
US20030022471A1 (en) * 1997-12-17 2003-01-30 Matsushita Electric Industrial Co., Ltd. Semiconductor thin film, method and apparatus for producing the same, and semiconductor device and method of producing the same
US20080293258A1 (en) * 2007-05-24 2008-11-27 Shimadzu Corporation Crystallization apparatus and crystallization method
US20120074117A1 (en) * 2010-09-23 2012-03-29 Varian Semiconductor Equipment Associates, Inc. In-situ heating and co-annealing for laser annealed junction formation
US20130196455A1 (en) * 2012-01-27 2013-08-01 Ultratech, Inc. Two-beam laser annealing with improved temperature performance
KR101351340B1 (ko) * 2013-10-23 2014-01-16 주식회사 엘티에스 태양전지 제조방법
WO2014023798A2 (fr) * 2012-08-10 2014-02-13 Fraunhofer Gesellschaft zur Förderung der angewandten Forschung e.V. Procédé d'enlèvement d'une couche
WO2014206504A1 (fr) * 2013-06-26 2014-12-31 Universität Konstanz Procédé et dispositif permettant de produire un élément photovoltaïque présentant un rendement stabilisé

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Publication number Priority date Publication date Assignee Title
JP2001044120A (ja) * 1999-08-04 2001-02-16 Mitsubishi Electric Corp レーザ熱処理方法およびレーザ熱処理装置
JP2002217125A (ja) * 2001-01-23 2002-08-02 Sumitomo Heavy Ind Ltd 表面処理装置及び方法

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030022471A1 (en) * 1997-12-17 2003-01-30 Matsushita Electric Industrial Co., Ltd. Semiconductor thin film, method and apparatus for producing the same, and semiconductor device and method of producing the same
JP2000042765A (ja) * 1998-07-29 2000-02-15 Sumitomo Heavy Ind Ltd ステージの移動制御装置及び方法並びにこれを用いたレーザアニール装置及び方法
DE10046170A1 (de) 2000-09-19 2002-04-04 Fraunhofer Ges Forschung Verfahren zur Herstellung eines Halbleiter-Metallkontaktes durch eine dielektrische Schicht
US20080293258A1 (en) * 2007-05-24 2008-11-27 Shimadzu Corporation Crystallization apparatus and crystallization method
US20120074117A1 (en) * 2010-09-23 2012-03-29 Varian Semiconductor Equipment Associates, Inc. In-situ heating and co-annealing for laser annealed junction formation
US20130196455A1 (en) * 2012-01-27 2013-08-01 Ultratech, Inc. Two-beam laser annealing with improved temperature performance
WO2014023798A2 (fr) * 2012-08-10 2014-02-13 Fraunhofer Gesellschaft zur Förderung der angewandten Forschung e.V. Procédé d'enlèvement d'une couche
WO2014206504A1 (fr) * 2013-06-26 2014-12-31 Universität Konstanz Procédé et dispositif permettant de produire un élément photovoltaïque présentant un rendement stabilisé
KR101351340B1 (ko) * 2013-10-23 2014-01-16 주식회사 엘티에스 태양전지 제조방법

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