WO2017012187A1 - 一种干法刻蚀机台及其使用方法 - Google Patents

一种干法刻蚀机台及其使用方法 Download PDF

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WO2017012187A1
WO2017012187A1 PCT/CN2015/089863 CN2015089863W WO2017012187A1 WO 2017012187 A1 WO2017012187 A1 WO 2017012187A1 CN 2015089863 W CN2015089863 W CN 2015089863W WO 2017012187 A1 WO2017012187 A1 WO 2017012187A1
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temperature
temperature value
substrate
processor
dry etching
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French (fr)
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刘思洋
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices

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  • the present invention relates to the field of display technology, and in particular to a dry etching machine and a method of using the same.
  • the etching portion is divided into wet etching and dry etching.
  • the process chamber of the dry etching machine is mainly composed of an upper electrode, a lower electrode and a process chamber wall.
  • the surface temperature uniformity of the lower electrode is not ideal.
  • the substrate for example, the glass substrate
  • the surface temperature uniformity of the substrate is also unsatisfactory, which affects the uniformity of etching.
  • the photoresist at a higher temperature on the substrate is liable to harden, which affects the process of subsequent photoresist stripping. Since the hardened photoresist is difficult to be stripped clean, the film formation process after the photoresist stripping is affected, and the quality of the obtained array substrate is affected.
  • a first aspect of the present invention provides a dry etching machine, comprising: a sealed process chamber for dry etching a substrate, wherein the process chamber is provided with a cavity at the top of the cavity An upper electrode, a lower electrode opposite to the upper electrode at a bottom of the cavity, a plurality of temperature sensors and a cooling controller, a plurality of temperature sensors disposed on an upper surface of the lower electrode, the cooling controller including a plurality of gas nozzles and a processor a gas nozzle is disposed beside each temperature sensor; when the substrate is placed on the lower electrode, the temperature sensor contacts the lower surface of the substrate, and is used for detecting the temperature of the substrate at the position where it is located, and detecting the temperature value of the substrate It is transmitted to the cooling controller; the processor of the cooling controller is used to control the gas flow rate of each gas nozzle according to the temperature value detected by each temperature sensor at the same time.
  • the processor of the cooling controller detects the temperature value sent by each temperature sensor at the same time, the highest When the difference between the temperature value and the lowest temperature value is greater than or equal to the preset temperature difference, the processor increases the gas flow rate of the gas nozzle next to the temperature sensor that detects the highest temperature value, and reduces or maintains the lowest temperature value detected. The gas flow of the gas nozzle next to the temperature sensor.
  • the processor of the cooling controller detects the temperature value sent by each temperature sensor, the highest temperature value is greater than or equal to the preset maximum temperature value, and the processor increases the gas adjacent to the temperature sensor that detects the highest temperature value.
  • the gas flow rate of the nozzle is the highest temperature value is greater than or equal to the preset maximum temperature value, and the processor increases the gas adjacent to the temperature sensor that detects the highest temperature value.
  • the dry etching machine further includes a power controller for increasing an output voltage of the DC power source of the fixed substrate when detecting that the processor increases the gas flow rate of the gas nozzle.
  • the preset temperature difference is 10 ° C.
  • the preset maximum temperature is 100 ° C.
  • the gas ejected from the gas nozzle is helium.
  • the embodiment of the present invention provides a dry etching machine.
  • the substrate is placed inside the process chamber of the dry etching machine for etching, the substrate is placed on the lower electrode. on.
  • a plurality of temperature sensors are placed on the lower electrode, and the temperature sensor can transmit the detected temperature value of the substrate to the cooling controller in real time.
  • the processor of the cooling controller can control the gas flow rate of each gas nozzle according to the temperature value detected by each temperature sensor at the same time.
  • a gas nozzle is disposed beside each temperature sensor. Therefore, the cooling controller can precisely adjust the temperature of the substrate by adjusting the flow rate of the cooling gas sprayed from each gas nozzle. It is beneficial to improve the stability and uniformity of the temperature of the substrate, and improve the product quality of the array substrate prepared by the substrate.
  • a second aspect of the present invention provides a method of using a dry etching machine, the method comprising:
  • Each of the plurality of temperature sensors detects the temperature of the substrate at the corresponding position, and transmits the detected temperature values to the cooling controller;
  • the processor of the cooling controller controls the gas flow rate of each gas nozzle according to the temperature value detected by each temperature sensor at the same time;
  • a gas nozzle is disposed beside each temperature sensor.
  • the processor of the cooling controller controls the gas flow rate of each gas nozzle according to the temperature value detected by each temperature sensor at the same time:
  • the processor of the cooling controller determines whether the difference between the highest temperature value and the lowest temperature value is greater than or equal to the preset temperature difference among the temperature values sent by the temperature sensors at the same time;
  • the processor increases the gas flow of the gas nozzle next to the temperature sensor that detected the highest temperature value, decreases or Maintain the gas flow rate of the gas nozzle next to the temperature sensor that detected the lowest temperature value.
  • the processor of the cooling controller controls the gas flow rate of each gas nozzle according to the temperature value detected by each temperature sensor at the same time:
  • the processor of the cooling controller determines whether the highest temperature value is greater than or equal to the preset maximum temperature value among the temperature values sent by the temperature sensors;
  • the processor increases the gas flow rate of the gas nozzle adjacent to the temperature sensor that detected the highest temperature value.
  • FIG. 1 is a schematic structural view of a process chamber of a dry etching machine according to an embodiment of the present invention
  • FIG. 2 is a flow chart of a method of using a dry etching machine according to an embodiment of the present invention.
  • Embodiments of the present invention provide a dry etching machine including a sealed process chamber 1 for dry etching a substrate 6. As shown in FIG. 1, the process chamber 1 is provided with an upper electrode 2 at the top of the cavity and a lower electrode 3 at the bottom of the cavity opposite to the upper electrode 2. In addition, inside the process chamber 1 of the dry etching machine in the embodiment of the present invention, a plurality of temperature sensors 4 and a cooling controller are further disposed.
  • a plurality of temperature sensors 4 are disposed on the upper surface of the lower electrode 3, and the sensing portion of the temperature sensor 4 is placed upward.
  • the number of temperature sensors 4 provided is directly related to the size of the lower electrode 3. The larger the size of the lower electrode 3, the more temperature sensors 4 are required to be disposed.
  • the cooling controller in the embodiment of the present invention includes a plurality of gas nozzles 5 and a processor. In order to achieve more precise adjustment of the temperature of the substrate 6, a gas nozzle 5 is disposed beside each temperature sensor 4.
  • the substrate 6 When the substrate 6 is placed inside the process chamber 1 for an etching process, the substrate 6 is placed on the lower electrode 3. Due to temperature The sensing portion of the degree sensor 4 is placed upward, and at this time, the sensing portion of the temperature sensor 4 contacts the lower surface of the substrate 6, and the temperature of the lower surface of the substrate 6 is detected.
  • the temperature sensor 4 can periodically detect the temperature of the substrate 6 at the position, that is, the temperature of the substrate 6 to which the sensing portion is in contact can be detected.
  • the detection period of the temperature sensor 4 can be set according to the actual situation, which is not limited by the embodiment of the present invention.
  • the temperature sensor 4 can transmit the detected temperature value of the substrate 6 to the cooling controller in real time.
  • the processor of the cooling controller can control the gas flow rate of each gas nozzle 5 based on the temperature value detected by each temperature sensor 4 at the same time.
  • the gas ejected from the gas nozzle 5 flows along the gap between the substrate 6 and the lower electrode 3, taking away the heat of the substrate 6, and lowering the temperature of the substrate 6.
  • the cooling controller can adjust the temperature of the substrate 6 more precisely by adjusting the flow rate of the cooling gas ejected from the respective gas nozzles 5. It is advantageous to improve the stability and uniformity of the temperature of the substrate 6 and improve the product quality of the array substrate 6 produced based on the substrate 6.
  • the cooling gas is preferably helium because helium is an inert gas and is low in cost.
  • the processor of the cooling controller detects the temperature value transmitted by each temperature sensor 4 at the same time, the difference between the highest temperature value and the lowest temperature value is greater than or equal to the preset temperature difference.
  • the processor can increase the gas flow rate of the gas nozzle 5 beside the temperature sensor 4 detecting the highest temperature value while reducing or maintaining the gas flow rate of the gas nozzle 5 beside the temperature sensor 4 detecting the lowest temperature value, The uniformity of temperature throughout the substrate 6 is improved.
  • the dry etching machine is provided with five temperature sensors 4, and the current temperature values transmitted by the temperature sensors 4 are T 1 , T 2 , T 3 , T 4 and T 5 , respectively .
  • the processor of the cooling controller detects that the temperature value is the largest T 1 and the smallest is T 3 . Thereafter, T 1 and T 3 are subjected to a difference process to obtain ⁇ T. Next, the processor determines whether the difference ⁇ T between T 1 and T 3 exceeds a preset temperature difference (assuming 10 ° C).
  • the processor increases the gas flow temperature at the value T 1 of the gas nozzle 5, to carry away the heat at the T 1 of the gas flow through a larger decrease of the temperature T 1; for T 3
  • the processor can maintain the gas flow rate of the gas nozzle 5, and the gas flow rate of the gas nozzle 5 can be appropriately reduced. Conversely, if not exceeded, the processor can maintain the gas flow rate of each gas nozzle 5 unchanged.
  • the temperature of the substrate 6 should be kept stable, that is, the temperature of the substrate 6 should not be too high. Therefore, in the embodiment of the present invention, when the processor of the cooling controller detects the temperature value transmitted by each temperature sensor 4, the highest temperature value is greater than or equal to the preset maximum temperature value, and the processor increases the detected maximum temperature value. The gas flow rate of the gas nozzle 5 beside the temperature sensor 4.
  • the processor of the cooling controller detects that the temperature value is the maximum T 1 .
  • the processor determines whether T 1 exceeds the preset maximum temperature value. If exceeded, the processor increases the gas flow temperature at the value T 1 of the gas nozzle 5, through increase of the gas flow take place more T 1 of heat, reducing the temperature T 1 at; conversely, If not exceeded, the processor can maintain the gas flow rate of each gas nozzle 5 unchanged.
  • the preset maximum temperature value in the embodiment of the present invention can be set to 100 ° C.
  • the dry etching machine in the embodiment of the invention further includes a power controller.
  • the power source controller is for increasing the output voltage of the DC power source of the fixed substrate 6 when detecting that the processor increases the gas flow rate of the gas nozzle 5.
  • the power controller can detect the temperature value corresponding to each temperature sensor 4 at the same time, determine whether the highest temperature value among the temperature values is greater than or equal to the highest temperature value, or determine the highest temperature value and the lowest temperature among the temperature values. Whether the difference of values is greater than or equal to the preset temperature difference. If at least one of the two determination results is YES, the power supply controller can appropriately increase the output voltage of the DC power source of the fixed substrate 6 to prevent the substrate 6 from being displaced due to the action of the air flow.
  • the power source controller can detect the gas flow rate of each gas nozzle 5 in real time. Once the gas flow rates of the respective gas nozzles 5 are detected to be unequal, the power source controller can immediately increase the output voltage to prevent the substrate 6 from being displaced.
  • the embodiment of the present invention further provides a method for using a dry etching machine. As shown in FIG. 2, the method includes:
  • Step S101 Each of the plurality of temperature sensors detects the temperature of the substrate at the corresponding position, and transmits the detected temperature values to the cooling controller.
  • Step S102 The processor of the cooling controller controls the gas flow rate of each gas nozzle according to the temperature value detected by each temperature sensor at the same time.
  • the processor of the cooling controller can determine whether the difference between the highest temperature value and the lowest temperature value among the temperature values transmitted by the temperature sensors 4 at the same time is greater than or equal to the preset temperature difference; if yes, the processor The gas flow rate of the gas nozzle 5 beside the temperature sensor 4 in which the highest temperature value is detected is increased, and the gas flow rate of the gas nozzle 5 beside the temperature sensor 4 in which the lowest temperature value is detected is reduced or maintained.
  • the processor of the cooling controller can determine whether the highest temperature value is greater than or equal to the preset maximum temperature value among the temperature values sent by each temperature sensor 4; if so, the processor increases the temperature sensor 4 that detects the highest temperature value.
  • the processor of the cooling controller can simultaneously judge the above two conditions, which is beneficial to improving the temperature stability of the substrate 6.
  • the uniformity and uniformity ensure that the photoresist hardening does not occur in the entire etching process, and the etching uniformity of the array substrate 6 is improved.

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Abstract

一种干法刻蚀机台及其使用方法，该刻蚀机台包括用于对基板（6）进行干法刻蚀的密封的工艺腔（1），所述工艺腔（1）内设置有位于腔顶的上部电极（2）、与所述上部电极（2）相对位于腔底的下部电极（3）、多个温度传感器（4）和冷却控制器，多个温度传感器（4）设置于所述下部电极（3）的上表面，冷却控制器包括多个气体喷嘴（5）和处理器，每一温度传感器（4）旁设置有一个气体喷嘴（5）；所述下部电极（3）上放置有基板（6）时，温度传感器（4）接触基板（6）的下表面，用于检测自身所在位置的基板（6）的温度，并将检测到的基板（6）的温度值传输给冷却控制器；冷却控制器的处理器用于根据同一时刻各温度传感器（4）检测到的温度值，控制各气体喷嘴（5）的气体流量。该刻蚀机台及其使用方法能够改善干法刻蚀过程中，基板的表面温度均匀性不理想的技术问题。

Description

一种干法刻蚀机台及其使用方法
本申请要求享有2015年7月21日提交的名称为“一种干法刻蚀机台及其使用方法”的中国专利申请CN 201510432516.8的优先权，其全部内容通过引用并入本文中。
技术领域
本发明涉及显示技术领域，具体地说，涉及一种干法刻蚀机台及其使用方法。
背景技术
在目前的液晶显示面板的阵列基板的制造过程中，刻蚀部分分为湿法刻蚀和干法刻蚀。其中在干法刻蚀部分中，干法刻蚀机台的工艺腔主要由上部电极、下部电极和工艺腔壁组成。
现有的温度控制方式下，下部电极的表面温度均匀性不理想。在阵列基板的制程中，基板(例如玻璃基板)通过直流电源加载的方式固定在下部电极的表面，受到下部电极的影响，基板的表面温度均匀性也不理想，影响刻蚀的均匀性。并且基板上温度较高处的光刻胶易发生硬化，影响后续光刻胶剥离的制程。由于硬化后的光刻胶很难剥离干净，进而影响光刻胶剥离后的成膜工艺，影响制得的阵列基板的品质。
发明内容
本发明的目的在于提供一种触控面板和显示装置，以解决触控面板出现斜线波纹(mura)的技术问题。
本发明第一方面提供了一种干法刻蚀机台，该干法刻蚀机台包括用于对基板进行干法刻蚀的密封的工艺腔，所述工艺腔内设置有位于腔顶的上部电极、与所述上部电极相对位于腔底的下部电极、多个温度传感器和冷却控制器，多个温度传感器设置于所述下部电极的上表面，冷却控制器包括多个气体喷嘴和处理器，每一温度传感器旁设置有一个气体喷嘴；所述下部电极上放置有基板时，温度传感器接触基板的下表面，用于检测自身所在位置的基板的温度，并将检测到的基板的温度值传输给冷却控制器；冷却控制器的处理器用于根据同一时刻各温度传感器检测到的温度值，控制各气体喷嘴的气体流量。
可选的，当冷却控制器的处理器检测到同一时刻各温度传感器传来的温度值中，最高 温度值和最低温度值之间的差值大于或等于预设温度差值时，处理器增大检测到最高温度值的温度传感器旁的气体喷嘴的气体流量，减小或保持检测到最低温度值的温度传感器旁的气体喷嘴的气体流量。
可选的，当冷却控制器的处理器检测到各温度传感器传来的温度值中，最高温度值大于或等于预设最高温度值，处理器增大检测到最高温度值的温度传感器旁的气体喷嘴的气体流量。
可选的，该干法刻蚀机台还包括电源控制器，所述电源控制器用于在检测到处理器增大气体喷嘴的气体流量时，增大固定基板的直流电源的输出电压。
可选的，所述预设温度差值为10℃。
可选的，所述预设最高温度为100℃。
可选的，气体喷嘴喷出的气体为氦气。
本发明带来了以下有益效果：本发明实施例提供了一种干法刻蚀机台，当基板放置于该干法刻蚀机台的工艺腔内部进行刻蚀工艺时，基板放置在下部电极上。下部电极上放置多个温度传感器，温度传感器可实时将检测到的基板的温度值传输给冷却控制器。冷却控制器的处理器可根据同一时刻各温度传感器检测到的温度值，控制各气体喷嘴的气体流量。每一温度传感器旁都设置有气体喷嘴，因此，冷却控制器可通过调整各气体喷嘴喷出的冷却气体的流量，对基板各处的温度进行较为精确的调控。有利于提高基板各处温度的稳定性和均匀性，提高该基板制得的阵列基板的产品质量。
本发明第二方面提供了一种干法刻蚀机台的使用方法，该方法包括：
多个温度传感器各自检测对应位置的基板的温度，并将各自检测到的温度值传输给冷却控制器；
冷却控制器的处理器根据同一时刻各温度传感器检测到的温度值，控制各气体喷嘴的气体流量；
其中，每一温度传感器旁设置有一个气体喷嘴。
可选的，冷却控制器的处理器根据同一时刻各温度传感器检测到的温度值，控制各气体喷嘴的气体流量包括：
冷却控制器的处理器判断同一时刻各温度传感器传来的温度值中，最高温度值和最低温度值之间的差值是否大于或等于预设温度差值；
若是，处理器增大检测到最高温度值的温度传感器旁的气体喷嘴的气体流量，减小或 保持检测到最低温度值的温度传感器旁的气体喷嘴的气体流量。
可选的，冷却控制器的处理器根据同一时刻各温度传感器检测到的温度值，控制各气体喷嘴的气体流量包括：
冷却控制器的处理器判断各温度传感器传来的温度值中，最高温度值是否大于或等于预设最高温度值；
若是，处理器增大检测到最高温度值的温度传感器旁的气体喷嘴的气体流量。
本发明的其它特征和优点将在随后的说明书中阐述，并且，部分地从说明书中变得显而易见，或者通过实施本发明而了解。本发明的目的和其他优点可通过在说明书、权利要求书以及附图中所特别指出的结构来实现和获得。
附图说明
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要的附图做简单的介绍：
图1是本发明实施例提供的干法刻蚀机台的工艺腔的结构示意图；
图2是本发明实施例提供的干法刻蚀机台的使用方法流程图。
具体实施方式
以下将结合附图及实施例来详细说明本发明的实施方式，借此对本发明如何应用技术手段来解决技术问题，并达成技术效果的实现过程能充分理解并据以实施。需要说明的是，只要不构成冲突，本发明中的各个实施例以及各实施例中的各个特征可以相互结合，所形成的技术方案均在本发明的保护范围之内。
本发明实施例提供了一种干法刻蚀机台，包括用于对基板6进行干法刻蚀的密封的工艺腔1。如图1所示，该工艺腔1内设置有位于腔顶的上部电极2、与上部电极2相对位于腔底的下部电极3。另外，本发明实施例中的干法刻蚀机台的工艺腔1内部，还设置有多个温度传感器4和冷却控制器。
具体的，多个温度传感器4设置于下部电极3的上表面，温度传感器4的感应部位朝上放置。设置的温度传感器4的个数与下部电极3的尺寸有直接关系，下部电极3的尺寸越大需设置越多的温度传感器4。
本发明实施例中的冷却控制器包括多个气体喷嘴5和处理器，为了实现对基板6温度的较为精确的调控，每一温度传感器4旁设置有一个气体喷嘴5。
当基板6放置于工艺腔1内部进行刻蚀工艺时，下部电极3上放置该基板6。由于温 度传感器4的感应部位朝上放置，此时温度传感器4的感应部位接触基板6的下表面，检测基板6下表面的温度。
温度传感器4可周期性地检测所处位置的基板6的温度，即能够检测到感应部位接触到的基板6的温度。其中，温度传感器4的检测周期可以根据实际情况进行设置，本发明实施例对此不进行限制。
温度传感器4可实时将检测到的基板6的温度值传输给冷却控制器。冷却控制器的处理器可根据同一时刻各温度传感器4检测到的温度值，控制各气体喷嘴5的气体流量。气体喷嘴5喷出的气体沿着基板6和下部电极3之间的缝隙流动，带走基板6的热量，降低基板6的温度。
由于每一温度传感器4旁都设置有气体喷嘴5，因此，冷却控制器可通过调整各气体喷嘴5喷出的冷却气体的流量，对基板6各处的温度进行较为精确的调控。有利于提高基板6各处温度的稳定性和均匀性，提高基于该基板6制得的阵列基板6的产品质量。
其中，冷却气体优选氦气，因为氦气为惰性气体并且使用成本低。
具体的，本发明实施例中，当冷却控制器的处理器检测到同一时刻各温度传感器4传来的温度值中，最高温度值和最低温度值之间的差值大于或等于预设温度差值时，处理器可以增大检测到最高温度值的温度传感器4旁的气体喷嘴5的气体流量，同时减小或保持检测到最低温度值的温度传感器4旁的气体喷嘴5的气体流量，以提高基板6各处温度的均匀性。
例如，该干法刻蚀机台中设置有5个温度传感器4，当前时刻下，各温度传感器4传来的温度值分别为T1、T2、T3、T4和T5。其中，冷却控制器的处理器检测到温度值最大的为T1，最小的为T3。之后，对T1和T3进行做差处理，得到△T。接下来，处理器判断T1和T3的差值△T是否超出预设温度差值(假设10℃)。若超出，处理器增大温度值为T1之处的气体喷嘴5的气体流量，以通过更大的气体流动带走T1之处的热量、降低T1之处的温度；而对于T3之处的气体喷嘴5而言，处理器可以保持该气体喷嘴5的气体流量，也可适当减小该气体喷嘴5的气体流量。反之，若未超过，处理器可保持各气体喷嘴5的气体流量不变。
另外，为了防止基板6出现光刻胶硬化、导致光刻胶无法完全剥离的不良现象，基板6的温度应当保持较好的稳定性，即基板6温度不能过高。因此，本发明实施例中，当冷却控制器的处理器检测到各温度传感器4传来的温度值中，最高温度值大于或等于预设最高温度值，处理器增大检测到最高温度值的温度传感器4旁的气体喷嘴5的气体流量。
同样的，假设该干法刻蚀机台中设置有5个温度传感器4，当前时刻下，各温度传感 器4传来的温度值分别为T1、T2、T3、T4和T5。其中，冷却控制器的处理器检测到温度值最大的为T1后，处理器判断T1是否超出预设最高温度值。若超出，处理器增大温度值为T1之处的气体喷嘴5的气体流量，以通过增大气体流动性带走T1之处更多的热量、降低T1之处的温度；反之，若未超过，处理器可保持各气体喷嘴5的气体流量不变。其中，由于光刻胶在接触温度超过100℃时，很可能发生硬化，因此，本发明实施例中的预设最高温度值可设为100℃。
由于基板6是利用直流加载的方式固定设置于下部电极3上的，因此，冷却处理器对部分气体喷嘴5的气体流量进行控制时，很容易使得基板6因各处受力不均匀发生移位，易降低基板6的刻蚀精度。为了防止该不良现象的发生，本发明实施例中的干法刻蚀机台还包括电源控制器。电源控制器用于在检测到处理器增大气体喷嘴5的气体流量时，增大固定基板6的直流电源的输出电压。
具体的，电源控制器可检测同一时刻时各温度传感器4对应的温度值，判断各温度值中的最高温度值是否大于或等于最高温度值，或判断各温度值中的最高温度值和最低温度值的差值是否大于或等于预设温度差值。若两个判断结果至少之一为是，则电源控制器可适当增大固定基板6的直流电源的输出电压，以防止基板6由于气流的作用发生移位。
或者，电源控制器可实时检测各气体喷嘴5的气体流量，一旦检测到各气体喷嘴5的气体流量不相等，电源控制器也可立即增大输出电压，防止基板6发生移位。
进一步的，本发明实施例还提供了一种干法刻蚀机台的使用方法，如图2所示，该方法包括：
步骤S101、多个温度传感器各自检测对应位置的基板的温度，并将各自检测到的温度值传输给冷却控制器。
步骤S102、冷却控制器的处理器根据同一时刻各温度传感器检测到的温度值，控制各气体喷嘴的气体流量。
此时，冷却控制器的处理器可以判断同一时刻各温度传感器4传来的温度值中，最高温度值和最低温度值之间的差值是否大于或等于预设温度差值；若是，处理器增大检测到最高温度值的温度传感器4旁的气体喷嘴5的气体流量，减小或保持检测到最低温度值的温度传感器4旁的气体喷嘴5的气体流量。
或者，冷却控制器的处理器可以判断各温度传感器4传来的温度值中，最高温度值是否大于或等于预设最高温度值；若是，处理器增大检测到最高温度值的温度传感器4旁的气体喷嘴5的气体流量。
冷却控制器的处理器可同时对上述两个情况进行判断，有利于提高基板6温度的稳定 性和均匀性，保证整个刻蚀制程中不会发生光刻胶硬化，提高阵列基板6的刻蚀均匀程度。
虽然本发明所公开的实施方式如上，但所述的内容只是为了便于理解本发明而采用的实施方式，并非用以限定本发明。任何本发明所属技术领域内的技术人员，在不脱离本发明所公开的精神和范围的前提下，可以在实施的形式上及细节上作任何的修改与变化，但本发明的专利保护范围，仍须以所附的权利要求书所界定的范围为准。

Claims (10)

  1. 一种干法刻蚀机台，其包括用于对基板进行干法刻蚀的密封的工艺腔，所述工艺腔内设置有位于腔顶的上部电极、与所述上部电极相对位于腔底的下部电极、多个温度传感器和冷却控制器，
    多个温度传感器设置于所述下部电极的上表面，冷却控制器包括多个气体喷嘴和处理器，每一温度传感器旁设置有一个气体喷嘴；
    所述下部电极上放置有基板时，温度传感器接触基板的下表面，用于检测自身所在位置的基板的温度，并将检测到的基板的温度值传输给冷却控制器；冷却控制器的处理器用于根据同一时刻各温度传感器检测到的温度值，控制各气体喷嘴的气体流量。
  2. 根据权利要求1所述的干法刻蚀机台，其中，当冷却控制器的处理器检测到同一时刻各温度传感器传来的温度值中，最高温度值和最低温度值之间的差值大于或等于预设温度差值时，处理器增大检测到最高温度值的温度传感器旁的气体喷嘴的气体流量，减小或保持检测到最低温度值的温度传感器旁的气体喷嘴的气体流量。
  3. 根据权利要求1所述的干法刻蚀机台，其中，当冷却控制器的处理器检测到各温度传感器传来的温度值中，最高温度值大于或等于预设最高温度值，处理器增大检测到最高温度值的温度传感器旁的气体喷嘴的气体流量。
  4. 根据权利要求2或3所述的干法刻蚀机台，其中，还包括电源控制器，所述电源控制器用于在检测到处理器增大气体喷嘴的气体流量时，增大固定基板的直流电源的输出电压。
  5. 根据权利要求2所述的干法刻蚀机台，其中，
    所述预设温度差值为10℃。
  6. 根据权利要求3所述的干法刻蚀机台，其中，
    所述预设最高温度为100℃。
  7. 根据权利要求1所述的干法刻蚀机台，其中，
    气体喷嘴喷出的气体为氦气。
  8. 一种干法刻蚀机台的使用方法，包括：
    多个温度传感器各自检测对应位置的基板的温度，并将各自检测到的温度值传输给冷却控制器；
    冷却控制器的处理器根据同一时刻各温度传感器检测到的温度值，控制各气体喷嘴的气体流量；
    其中，每一温度传感器旁设置有一个气体喷嘴。
  9. 根据权利要求8所述的方法，其中，冷却控制器的处理器根据同一时刻各温度传感器检测到的温度值，控制各气体喷嘴的气体流量包括：
    冷却控制器的处理器判断同一时刻各温度传感器传来的温度值中，最高温度值和最低温度值之间的差值是否大于或等于预设温度差值；
    若是，处理器增大检测到最高温度值的温度传感器旁的气体喷嘴的气体流量，减小或保持检测到最低温度值的温度传感器旁的气体喷嘴的气体流量。
  10. 根据权利要求8所述的方法，其中，冷却控制器的处理器根据同一时刻各温度传感器检测到的温度值，控制各气体喷嘴的气体流量包括：
    冷却控制器的处理器判断各温度传感器传来的温度值中，最高温度值是否大于或等于预设最高温度值；
    若是，处理器增大检测到最高温度值的温度传感器旁的气体喷嘴的气体流量。
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