WO2017010730A1 - Boîtier à l'échelle d'une puce de led comprenant un matériau de conversion de couleur utilisant des poudres de verre, et son procédé de fabrication - Google Patents

Boîtier à l'échelle d'une puce de led comprenant un matériau de conversion de couleur utilisant des poudres de verre, et son procédé de fabrication Download PDF

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Publication number
WO2017010730A1
WO2017010730A1 PCT/KR2016/007280 KR2016007280W WO2017010730A1 WO 2017010730 A1 WO2017010730 A1 WO 2017010730A1 KR 2016007280 W KR2016007280 W KR 2016007280W WO 2017010730 A1 WO2017010730 A1 WO 2017010730A1
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WO
WIPO (PCT)
Prior art keywords
glass frit
glass
led package
nitride semiconductor
semiconductor layer
Prior art date
Application number
PCT/KR2016/007280
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English (en)
Korean (ko)
Inventor
박태호
이정수
임형석
권광우
Original Assignee
주식회사 베이스
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020150100055A external-priority patent/KR101835041B1/ko
Priority claimed from KR1020150100056A external-priority patent/KR20170008938A/ko
Application filed by 주식회사 베이스 filed Critical 주식회사 베이스
Publication of WO2017010730A1 publication Critical patent/WO2017010730A1/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B19/00—Other methods of shaping glass
    • C03B19/02—Other methods of shaping glass by casting molten glass, e.g. injection moulding
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B19/00—Other methods of shaping glass
    • C03B19/06—Other methods of shaping glass by sintering, e.g. by cold isostatic pressing of powders and subsequent sintering, by hot pressing of powders, by sintering slurries or dispersions not undergoing a liquid phase reaction
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C4/00—Compositions for glass with special properties
    • C03C4/12—Compositions for glass with special properties for luminescent glass; for fluorescent glass
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/02—Frit compositions, i.e. in a powdered or comminuted form
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P40/00—Technologies relating to the processing of minerals
    • Y02P40/50—Glass production, e.g. reusing waste heat during processing or shaping
    • Y02P40/57—Improving the yield, e-g- reduction of reject rates

Definitions

  • the present invention relates to an LED package using a glass frit and a method of manufacturing the same, and more particularly, to a package to which an LED chip in the form of a flip chip is applied.
  • the present invention also relates to a method of manufacturing an LED package capable of maintaining color uniformity.
  • the semiconductor light emitting device is a device that can be miniaturized and emits light of vivid color, and is actively used as a light source for various display devices.
  • the material is degraded by high thermal energy or light energy, and in particular, when the binder resin and the phosphor are mixed, the binder resin deteriorates and discolors as the amount of heat generated by the light emitting device increases. There is a problem.
  • the binder resin is applied to manufacture the LED package, due to the poor heat dissipation performance, there is a problem that heat is generated, the resistance may be very high.
  • the light emitting device when used for a long time, the light efficiency is lowered and the package life of the light emitting device is reduced.
  • An object of the present invention is to provide an LED package to which a color conversion material is applied in order to improve high temperature reliability and maintain color uniformity.
  • Another object of the present invention is to provide a method of manufacturing an LED package that can improve workability and light conversion efficiency.
  • an LED package includes a substrate, a first conductive nitride semiconductor layer, an active layer, and a second conductive nitride semiconductor layer sequentially formed on the substrate, and the first conductive nitride.
  • An LED chip including an electrode formed on each of the semiconductor layer and the second conductivity type nitride semiconductor layer, wherein the substrate is positioned above the chip, and each nitride semiconductor layer is positioned below the substrate; And a surface layer covering side and top surfaces of the LED chip, wherein the surface layer is formed by dispersing phosphor in glass.
  • Glass according to the present invention for achieving the above object is characterized in that the low melting glass frit is melted, the molten low melting glass is filled between the high melting glass frit.
  • a method of manufacturing an LED package includes: (a) mixing a low melting point and a high melting point glass frit with a phosphor to form a glass green sheet; (b) baking the glass green sheet to form a fired body; (c) forming a groove in the fired body; And (d) inserting an LED chip in the form of a flip chip into the groove, wherein the firing is performed at a temperature higher than the softening temperature of the low melting glass frit to below the softening temperature of the high melting glass frit. It is done.
  • step (c) may be performed by sand blasting or acid etching using a mask.
  • the LED package according to the present invention uses a low melting point and a high melting point glass frit, thereby controlling the rapid shrinkage of the glass in the firing step, and minimize the occurrence of distortion.
  • a color conversion material utilizing a glass frit it is excellent in heat resistance and can be prevented from discoloration by heat, by using a phosphor, there is an effect that can maintain the color uniformity.
  • FIG. 1 is a cross-sectional view showing a step (S130) of forming a groove according to an embodiment of the present invention.
  • Figure 2 shows the step of forming a groove according to another embodiment of the present invention.
  • FIG. 3 is a cross-sectional view of an LED package according to an embodiment of the present invention.
  • FIG. 4 is a flowchart illustrating a method of manufacturing an LED package according to an embodiment of the present invention.
  • the LED package includes an LED chip 20 and surface layers 30 and electrodes 10a and 10b formed by dispersing phosphors on glass frits.
  • the LED chip 20 includes a substrate and a first conductivity type nitride semiconductor layer, an active layer, and a second conductivity type nitride semiconductor layer sequentially formed on the substrate, wherein the substrate is positioned on the LED chip, and each nitride semiconductor layer is formed on the substrate. It is in the form of a flip chip located under the substrate.
  • the flip chip shape can omit the wire bonding process, can provide an effect of increasing the area of the light emitting surface, and in particular, in the LED package according to the present invention can increase the bonding area of the LED chip and the surface layer Provide advantages.
  • the LED chip 20 may use the components of a general light emitting device chip as it is, and a first conductive nitride semiconductor layer (mainly n-type nitride semiconductor layer (n-GaN)), an active layer, and a first conductive semiconductor layer sequentially formed on the substrate and the substrate.
  • a two-conducting nitride semiconductor layer (mainly a p-type nitride semiconductor layer (p-GaN)).
  • the cross-sectional shape of the LED chip 20 may be rectangular or circular, but is not limited thereto.
  • the substrate may be a substrate such as sapphire (Al 2 O 3 ).
  • Electrodes 10a and 10b are provided on surfaces of each of the first conductivity type nitride semiconductor layer and the second conductivity type nitride semiconductor layer exposed under the LED chip 20.
  • the electrodes 10a and 10b are preferably formed of laminated metal pads such as Cr, Ni, and Au, and may be adhered to the LED chip surface by a transparent adhesive.
  • the surface layer 30 may cover the outer surface of the LED chip 20, but may cover the side surface of the LED chip 20.
  • the surface layer 30 is preferably a thickness of 0.05 ⁇ 1mm. If the thickness is less than 0.05mm, there is a risk of breakage due to the thin thickness, if the thickness exceeds 1mm, light conversion efficiency may be lowered.
  • the surface layer 30 may be formed with one groove, but two or more grooves may be formed at regular intervals in order to increase the strength of the glass. More preferably, three grooves are formed to increase the area of the surface layer, whereby the strength can be improved.
  • the number of grooves is two or more, each surface layer can be bonded to the LED chip by cutting the surface layer. As shown in FIG. 2, when a surface layer having three grooves is used without cutting, three LED chips may be bonded to each groove of the surface layer.
  • the surface layer 30 is formed by dispersing phosphor in glass.
  • the glass is one in which a low melting glass frit is melted, and the molten low melting glass is filled between the high melting glass frits.
  • the low melting glass frit is melted in the firing process into a glass state, and the high melting glass frit remains in the frit state without melting in the firing process.
  • Such a glass form can minimize the warping phenomenon while the glass shrinks rapidly by maintaining the shape of the high melting point glass frit, and can prevent curling.
  • strength of glass can be improved more.
  • the low melting glass frit has a temperature of about 500 to 800 ° C. in the firing operation, and may include a glass component including alkaline earth metal oxides (MgO, CrO, BaO), but is not limited thereto.
  • a glass component including alkaline earth metal oxides (MgO, CrO, BaO) but is not limited thereto.
  • the high melting point glass frit may be a glass having a temperature of about 800 ° C. or more in a calcination operation, and more specifically, it may include a borosilicate-based component which is borosilicate.
  • the borosilicate-based component may be applied at a high melting point, has strength and durability, and may be used alone or in combination of two or more kinds of calcium aluminum borosilicate and calcium sodium borosilicate.
  • the content of the high melting glass frit is preferably 50 to 90% based on the total vol% of the glass frit.
  • the content of the high melting glass frit is less than 50%, the content of the high melting glass frit becomes relatively low compared to the content of the low melting glass frit, so that the properties of the glass are determined by the low melting glass frit. That is, as the low melting glass frit is melted in the firing step, the glass may shrink sharply and curling may occur.
  • the content of the high melting glass frit exceeds 90%, densification by the low melting glass frit may be insufficient.
  • the phosphor may be YAG (yttrium aluminum garnet), TAG (Terbium aluminum garnet), silicate, oxide, nitride and sulfide.
  • the YAG-based phosphor improves temperature stability and brightness, and may be used by doping rare earth elements such as neodymium (Nd) and europium (Eu).
  • the TAG-based phosphor may use Tb 3 Al 5 O 12 doped with cerium (Ce).
  • the silicate system is a compound formed by combining one or more metal oxides with silica (SiO 2 ), and calcium silicate and magnesium silicate may be used. Zinc oxide or the like may be used as the oxide-based phosphor having excellent thermal stability.
  • nitride-based phosphor europium-doped calcium silicon nitride (CaSiN 2 ) or the like may be used.
  • the nitride-based phosphor has a relatively red color and has high color reproducibility and stability to temperature. Therefore, since the probability of discoloration of the phosphor by heat is low, there is an advantage that the failure rate of the LED package is low.
  • Europium-doped strontium sulfide (SrS) or the like may be used as the sulfide-based phosphor.
  • the phosphor may be mixed in an amount of about 5 to 50 vol% with respect to 100 vol% of the slurry, but the content of the phosphor is not limited thereto and may be adjusted in consideration of color conversion degree, color coordinate, color temperature, color rendering index (CRI), and the like. have.
  • the phosphor may be selected according to the wavelength of light emitted from the LED chip 20 to allow the LED package to implement white light. For example, when blue light is emitted from an LED chip and the phosphor is yellow, the yellow phosphor may be excited by blue light to emit yellow light, and the emitted blue may be mixed with the excited yellow light, thereby causing an LED package. Can provide white light.
  • the surface layer 30 covers not only the upper surface of the LED chip 20 but also the side surface, it is possible to prevent color unevenness in which the chromaticity of light is changed and maintain a uniform chromaticity.
  • the number of grooves formed in the surface layer is 2 or more, the area of the surface layer increases, and the strength of glass is improved.
  • FIG. 3 is a flowchart illustrating a method of manufacturing an LED package according to an embodiment of the present invention.
  • Glass green sheets are produced by a tape casting method from slurries containing low and high melting glass frits, binders, and solvents.
  • the tape casting method is a method in which a slurry is injected into a container device, processed to a predetermined thickness using a doctor blade, and then dried to produce a green sheet. Since the processing is performed before the firing using the green sheet, precision processing is possible, thereby improving productivity and minimizing the processing loss compared to performing grinding and cutting in the fired glass state. .
  • the slurry may be prepared with low melting point and high melting point glass frit 60 to 90%, binder 5 to 20%, solvent, 5 to 20% with respect to 100vol% of the slurry, but is not limited thereto.
  • the description of the low melting point and high melting point glass frit may be as described in the LED package description above.
  • the binder it is preferable to use PVB (Polyvinyl Butyral) and an acrylic binder having excellent volatility.
  • the solvent serves to adjust the viscosity of the binder, and may be used alone or in combination of two or more of an alcohol solvent, a ketone solvent, and the like. The solvent is removed by volatilization in the drying process.
  • the method may further include stacking the glass green sheets.
  • One glass green sheet formed in consideration of the thickness of the color conversion material to be manufactured may be formed, or the glass green sheet may be cut and laminated to the same width, but is not limited thereto. Thereafter, the laminated sheet may be compressed, and the compressed sheet is reduced to a thickness of about 15% or less, and after being fired, is formed into one monolithic. At this time, the monolith shrinks to about 15-25% in the width direction and shrinks to about 10% or less in the thickness direction.
  • the high melting point glass frit By maintaining the shape of the high melting point glass frit during firing, it is possible to control the shrinkage of the glass rapidly and to minimize the occurrence of distortion. As the low melting glass frit melts during firing, the pores may be filled by densification. For this reason, the high melting glass frit may not be visible to the naked eye, and may exhibit transparency of the glass.
  • the firing temperature is less than the softening temperature of the low melting glass frit, the compactness of the fired body may be insufficient, leading to a decrease in strength and transmittance of the glass as the porosity increases.
  • the firing temperature is higher than the softening temperature of the high melting glass frit, the phosphor powder may deteriorate or the glass may be warped.
  • the glass firing temperature may be approximately 500 ⁇ 800 °C.
  • the time to perform the firing may be about 10 to 100 minutes, but is not limited thereto.
  • the fired body may perform sand blasting or acid etching using a mask. Referring to FIG. 1, a groove may be formed on the surface of the fired body exposed by the mask.
  • Sand blasting and acid corrosion are processing methods of surface treatment.
  • sand blasting sand, alumina, silicon carbide and other ceramic powders are sprayed to scrape the surface layer to smooth the surface of the fired body, and in the case of acid corrosion, it is desired to remove unnecessary parts on the fired body surface. You can get a look.
  • the fired body is preferably formed to have a size that can cover the outer surface of the LED chip, and a thickness that can protect the LED chip.
  • One groove may be formed, but two or more grooves are preferably formed to improve the strength of the surface layer formed of glass. As the number of grooves increases, the area of the surface layer increases, so that the strength of the glass can be further increased. More preferably, three or more grooves may be formed at regular intervals as shown in FIG. 2. When the number of the grooves is two or more, the protruding portions between the grooves and the grooves may be cut and used as one surface layer, respectively, but the LED chips may be bonded to the plurality of grooves by themselves without a cutting process.
  • the LED chip 20 including a substrate and a first conductivity type nitride semiconductor layer, an active layer and a second conductivity type nitride semiconductor layer sequentially formed in the groove, and exposed to the upper portion of the LED chip 20 Bonding the substrate to be inserted into the groove first.
  • each of the n-type nitride semiconductor layer and the p-type nitride semiconductor layer exposed to the lower portion of the LED chip 20 is inserted into the groove and joined.
  • the outer surface of the LED chip may be covered with a surface layer 30 including a glass frit and phosphor.
  • the surface layer 30 is preferably a thickness of 0.05 ⁇ 1mm that can protect the LED chip 20.
  • the bonding may be performed by only physical contact using a non-conductive adhesive (NCA), and may be bonded by mechanical contact through interference bonding.
  • NCA non-conductive adhesive
  • the interference fit is that the LED chip 20 is inserted into the groove and slide.
  • the groove has a shape larger than that of the LED chip, and the width of the groove becomes narrower as it moves away from the groove entrance.
  • workability can be improved by using a tape casting method, sand blasting and acid corrosion.
  • a tape casting method sand blasting and acid corrosion.
  • by forming the grooves after firing it is possible to produce a surface layer of a desired thickness and shape, it is possible to improve the high temperature reliability by using a low melting point and a high melting point glass frit for the surface layer.
  • LED chip scale package including the color conversion material using the glass frit and the manufacturing method thereof are as follows.
  • glass frit mixed with 20 vol% of low melting glass frit containing alkaline earth metal oxide and 70 vol% of high melting glass frit containing borosilicate component, phosphor powder (Y 3 (Al, Gd) 5 O 12 : Ce 2+ ) 10 vol%, binder PVB 10 vol%, a solvent was prepared by mixing 10 vol% alcohol.
  • the glass green sheet was formed by the tape casting method, the glass green sheet was baked at about 800 ° C. to form a fired body. After forming a groove on the surface of the fired body by using a mask and sand blasting by sand blasting, a surface layer having a thickness of 1 mm was prepared.
  • a surface layer was prepared under the same conditions as in Example 1 except that the content of the low melting glass frit was 50% and the content of the high melting glass frit was 50%.
  • a surface layer was prepared under the same conditions as in Example 1 except that the content of the low melting glass frit was 10% and the content of the high melting glass frit was 90%.
  • a surface layer was prepared under the same conditions as in Example 1 except that the surface layer thickness was 0.05 mm.
  • the surface layer was manufactured under the same conditions as in Example 1 except that three grooves were formed in the surface layer.
  • a surface layer was prepared under the same conditions as in Example 1 except that no high melting glass frit was used.
  • a surface layer was prepared under the same conditions as in Example 1 except that the content of the high melting glass frit was 10% and the content of the low melting glass frit was 90%.
  • a surface layer was prepared under the same conditions as in Example 1 except that the content of the high melting glass frit was 30% and the content of the low melting glass frit was 70%.
  • a surface layer was prepared under the same conditions as in Example 1 except that the surface layer thickness was 3 mm.
  • the prepared specimens were measured for transmittance of 450 nm using the transmittance equipment.
  • the prepared specimens were measured for light efficiency values at a wavelength of 440 nm (wavelength band in which white light from a mounted blue chip is emitted).
  • the content of the high melting glass frit was 50 to 90 vol%, and the vitrification was well performed without distortion after firing, and relatively excellent transmittance and light efficiency were measured.
  • Comparative Example 1 when the high melting glass frit was not added, distortion occurred in the firing process, and the transmittance was not good.
  • the content of the high melting glass frit is 30 vol% or less, it can be seen that the distortion occurs and vitrification is not good.
  • the surface layer was so thick that the light efficiency was relatively low.

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
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  • Geochemistry & Mineralogy (AREA)
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Abstract

L'invention concerne un boîtier de LED et un procédé de fabrication de celui-ci, le boîtier de LED étant capable de prévenir la décoloration provoquée par la chaleur par le biais d'un matériau de conversion de couleur utilisant des poudres de verre à faible point de fusion et à point de fusion élevé. Le boîtier de LED utilisant des poudres de verre selon la présente invention comprend : une puce de LED en forme de puce retournée comprenant un substrat, une première couche en semiconducteur au nitrure conducteur, une couche active, une deuxième couche en semiconducteur au nitrure conducteur séquentiellement formée sur le substrat, et des électrodes formées respectivement sur la première couche en semiconducteur au nitrure conducteur et la deuxième couche en semiconducteur au nitrure conducteur, le substrat étant positionné au niveau d'une partie supérieure de la puce et les couches en semiconducteur au nitrure respectives étant positionnées au niveau d'une partie inférieure du substrat ; et une couche de surface couvrant une surface latérale et une surface supérieure de la puce de LED, la couche de surface étant formée par dispersion d'un luminophore dans les poudres de verre.
PCT/KR2016/007280 2015-07-14 2016-07-06 Boîtier à l'échelle d'une puce de led comprenant un matériau de conversion de couleur utilisant des poudres de verre, et son procédé de fabrication WO2017010730A1 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR10-2015-0100056 2015-07-14
KR1020150100055A KR101835041B1 (ko) 2015-07-14 2015-07-14 글래스의 제조 방법
KR1020150100056A KR20170008938A (ko) 2015-07-14 2015-07-14 글래스 파우더를 활용한 색변환 소재의 LED Chip scale package
KR10-2015-0100055 2015-07-14

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WO2017010730A1 true WO2017010730A1 (fr) 2017-01-19

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WO (1) WO2017010730A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114853319A (zh) * 2022-05-26 2022-08-05 中国建筑材料科学研究总院有限公司 一种厚玻璃的成型装置及方法

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KR101484634B1 (ko) * 2014-02-13 2015-01-21 주식회사 베이스 색변환 효율 및 광 추출 효율이 우수한 led 색변환 소재 및 그 제조 방법

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