WO2016208034A1 - Module de cellule solaire - Google Patents

Module de cellule solaire Download PDF

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Publication number
WO2016208034A1
WO2016208034A1 PCT/JP2015/068351 JP2015068351W WO2016208034A1 WO 2016208034 A1 WO2016208034 A1 WO 2016208034A1 JP 2015068351 W JP2015068351 W JP 2015068351W WO 2016208034 A1 WO2016208034 A1 WO 2016208034A1
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WO
WIPO (PCT)
Prior art keywords
solar cell
power generation
light absorption
generation unit
solar
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PCT/JP2015/068351
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English (en)
Japanese (ja)
Inventor
祐弥 保西
武士 新井本
山本　和重
中川　直之
総一郎 芝崎
Original Assignee
株式会社 東芝
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Priority to PCT/JP2015/068351 priority Critical patent/WO2016208034A1/fr
Publication of WO2016208034A1 publication Critical patent/WO2016208034A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/052—Cooling means directly associated or integrated with the PV cell, e.g. integrated Peltier elements for active cooling or heat sinks directly associated with the PV cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • Embodiment of this invention is related with a solar cell module.
  • a solar cell module having a general tandem structure has a structure in which a film to be a bottom cell and a film to be a top cell are stacked on the same substrate.
  • a silicon-based solar cell module has a structure in which a film made of crystalline silicon and a film made of amorphous silicon are stacked on the same substrate.
  • the conversion efficiency of the solar cell module having such a tandem structure is, for example, about 13.5%. That is, the conversion efficiency of a solar cell module having a general tandem structure is actually lower than the conversion efficiency of a single-layer crystalline silicon solar cell. The reason why the conversion efficiency of a solar cell module having a general tandem structure is low is that amorphous silicon having many crystal defects is used.
  • JP 2000-252496 A Japanese Patent Laying-Open No. 2015-65249
  • the problem to be solved by the present invention is to provide a solar cell module capable of improving the reliability.
  • the solar cell module includes a first power generation unit having a plurality of first solar cells electrically connected in parallel, and a plurality of second solar cells electrically connected in series, A second power generation unit provided on a side opposite to the light incident side of the first power generation unit and electrically connected in parallel with the first power generation unit.
  • the first solar cell has a plurality of first light absorption layers electrically connected in series.
  • FIG. 1 is a schematic exploded view for illustrating a solar cell module 1 according to the present embodiment.
  • 4 is a schematic plan view for illustrating a solar battery cell 40.
  • FIG. 3 is a schematic cross-sectional view for illustrating a solar battery cell 40.
  • FIG. 4 is a schematic plan view for illustrating connection of a plurality of solar cells 40.
  • FIG. 3 is a schematic plan view for illustrating a solar battery cell 60.
  • FIG. (A), (b) is a schematic cross section for illustrating the photovoltaic cell 60.
  • FIG. 4 is a schematic plan view for illustrating connection of a plurality of solar cells 60.
  • FIG. FIG. 8 is a cross-sectional view taken along line AA in FIG. FIG.
  • FIG. 6 is a graph for illustrating the relationship among the conversion efficiency of the solar battery cell 40, the band gap of the light absorption layer 43, and the conversion efficiency of the solar battery module 1.
  • FIG. 6 is a graph for illustrating the relationship among the conversion efficiency of the solar battery cell 40, the band gap of the light absorption layer 43, and the conversion efficiency of the solar battery module 1.
  • 4 is a graph for illustrating the relationship between a region where the conversion efficiency of the solar battery cell 40 is less than or equal to a theoretical value, the band gap of the light absorption layer 43, and the conversion efficiency of the solar battery module 1.
  • FIG. 4 is a graph for illustrating the relationship between a region where the conversion efficiency of the solar battery cell 40 is less than or equal to a theoretical value, the band gap of the light absorption layer 43, and the conversion efficiency of the solar battery module 1.
  • FIG. 6 is a graph for illustrating the relationship between a region where the conversion efficiency of the solar battery cell 40 is less than or equal to a theoretical value, the band gap of the light ab
  • FIG. 1 is a schematic exploded view for illustrating a solar cell module 1 according to the present embodiment.
  • the solar cell module 1 includes a protection unit 2, a sealing unit 3, a power generation unit 4 (corresponding to an example of a first power generation unit), an insulating unit 5, and a power generation unit 6 (second power generation unit).
  • the sealing part 7 and the protection part 8 are provided.
  • the protection unit 2 has a plate shape, and is provided on the light receiving surface side (incident surface side of the light L) of the power generation unit 4 and the power generation unit 6.
  • the protection unit 2 transmits light L such as sunlight and protects the light receiving surface sides of the power generation unit 4 and the power generation unit 6.
  • the protection unit 2 can be formed using, for example, an inorganic material such as glass or an organic material such as a translucent resin.
  • the inorganic material such as glass can be, for example, non-alkali glass, quartz glass, glass containing an alkali metal, or the like.
  • the glass containing an alkali metal can be, for example, soda-lime glass.
  • a solar battery cell 40 (corresponding to an example of a first solar battery cell) or a solar battery cell 60 (corresponding to an example of a second solar battery cell) described later may be a CIGS solar battery cell.
  • the CIGS solar cell includes Cu (In, Ga) Se 2 . Therefore, in a CIGS solar cell, Cu diffuses and Cu defects may occur.
  • the protective part 2 is formed of glass containing an alkali metal, alkali metal ions (for example, Na ions, K ions, etc.) contained in the glass containing the alkali metal enter the Cu deficient portion by substitution.
  • alkali metal ions enter the defect portion of Cu, the open circuit voltage increases, and as a result, the conversion efficiency can be increased.
  • the protection unit 2 may be formed of glass containing an alkali metal such as soda lime glass.
  • the organic material such as a translucent resin can be, for example, polyethylene, polyethylene terephthalate, polyethylene naphthalate, polyimide, polyamide, polyamideimide, liquid crystal polymer, cycloolefin polymer, or the like.
  • the protection part 2 is preferably formed from an inorganic material having low moisture permeability.
  • the sealing unit 3 is provided between the protection unit 2 and the power generation unit 4.
  • the sealing part 3 may be filled also between several photovoltaic cells 40 mentioned later.
  • the sealing unit 3 seals the light receiving surface side of the power generation unit 4.
  • the sealing unit 3 suppresses, for example, water vapor or gas included in the environment where the solar cell module 1 is installed from reaching the power generation unit 4.
  • the sealing unit 3 transmits light incident on the sealing unit 3.
  • the sealing unit 3 joins the protection unit 2 and the power generation unit 4 together.
  • the sealing part 3 can also have the function to absorb the impact from the outside.
  • the sealing part 3 can be formed from, for example, ethylene-vinyl acetate copolymer (EVA), PVB (polyvinyl butyral), ionomer, or the like.
  • the power generation unit 4 is provided on the side opposite to the side on which the light L of the protection unit 2 is incident.
  • the power generation unit 4 includes a plurality of solar cells 40 and wirings 46 that electrically connect the plurality of solar cells 40 in parallel.
  • the solar battery cell 40 mainly absorbs light having a short wavelength in the incident light L and converts it into electric power. Of the incident light L, long wavelength light passes through the solar battery cell 40 and enters the solar battery cell 60 described later. Therefore, the solar battery cell 40 (light absorption layer 43 (corresponding to an example of the first light absorption layer)) is included in the solar battery cell 60 (light absorption layer 61 (corresponding to an example of the second light absorption layer)). It has a larger band gap than the band gap.
  • the solar battery cell 40 can be a CIGS solar battery cell having a high Ga content
  • the solar battery cell 60 can be a crystalline silicon solar battery cell.
  • the detail regarding the photovoltaic cell 40 and the photovoltaic cell 60 is mentioned later.
  • FIG. 2 is a schematic plan view for illustrating the solar battery cell 40.
  • FIG. 3 is a schematic cross-sectional view for illustrating the solar battery cell 40.
  • the solar battery cell 40 has a monolithic integrated structure in which a plurality of light absorption layers 43 are electrically connected in series.
  • the solar battery cell 40 includes a substrate 41, an electrode 42, a light absorption layer 43, a buffer layer 44, and an electrode 45.
  • the substrate 41 has a plate shape and transmits light that has not been absorbed by the light absorption layer 43.
  • the substrate 41 can be formed from the same material as that of the protection unit 2, for example.
  • the electrode 42 is provided on one surface of the substrate 41. A plurality of electrodes 42 are provided at a predetermined interval.
  • the light absorption layer 43 is electrically connected to one end side of the electrode 42, and the adjacent light absorption layer 43 is electrically connected to the other end side of the electrode 42.
  • the electrode 42 is formed from a material having translucency and conductivity.
  • the electrode 42 can be formed using, for example, a transparent electrode material such as ITO or ZnO.
  • the light absorption layer 43 is provided on the opposite side of the electrode 42 from the substrate 41 side. A plurality of light absorption layers 43 are provided with a predetermined interval. The light absorption layer 43 is provided so as to straddle between the electrodes 42 provided at a predetermined interval. The light absorption layer 43 mainly absorbs short wavelength light in the incident light L and converts it into electric power.
  • the light absorption layer 43 is preferably formed using a material having a band gap of 1.4 eV or more and 3.0 eV or less.
  • the light absorption layer 43 can be formed using a compound semiconductor containing Cu, In, Ga, and Se and having a high Ga content.
  • the solar battery cell 40 is a CIGS solar battery cell with a high Ga content.
  • the light absorption layer 43 can be formed using a compound semiconductor containing Cu, Zn, Sn, S, and Se.
  • the solar cell 40 is a CZTS solar cell.
  • the light absorption layer 43 may have a layer made of a p-type organic semiconductor material and a layer made of an n-type organic semiconductor material.
  • the solar cell 40 is an organic thin film solar cell.
  • the light absorption layer 43 can be formed using a material having a perovskite crystal structure. In this case, the solar cell 40 is a perovskite solar cell.
  • the buffer layer 44 is provided on the opposite side of the light absorption layer 43 from the electrode 42 side.
  • the buffer layer 44 is made of an n-type semiconductor. If low-resistance impurities are generated when the light absorption layer 43 is formed, a leakage current may be generated and conversion efficiency may be reduced. For this reason, a buffer layer 44 made of an n-type semiconductor is provided on the light absorption layer 43 made of a p-type semiconductor to suppress leakage current caused by impurities.
  • the buffer layer 44 can be formed from, for example, CdS, ZnS, or the like.
  • the electrode 45 is provided on the opposite side of the buffer layer 44 from the light absorption layer 43 side.
  • the electrode 45 is formed from a material having translucency and conductivity.
  • the electrode 45 can be formed from the same material as the electrode 42, for example.
  • the electrode 45 penetrates the light absorption layer 43 in the thickness direction and is electrically connected to the electrode 42. That is, as shown in FIG. 3, the plurality of light absorption layers 43 are electrically connected in series by the electrode 42 and the electrode 45.
  • the photovoltaic cell 40 Since the several light absorption layer 43 is connected in series, the photovoltaic cell 40 turns into a high voltage type photovoltaic cell. Further, the output voltage of the solar battery cell 40 can be changed by changing the material of the light absorption layer 43 and the number of light absorption layers 43 (number of grooves 47).
  • the solar battery cell 40 having the above configuration can be manufactured using, for example, a semiconductor manufacturing process. In this case, the light absorption layer 43 and the like can be divided by performing scribing (grooving) using a laser or the like.
  • FIG. 4 is a schematic plan view for illustrating the connection of a plurality of solar cells 40.
  • the plurality of solar cells 40 are electrically connected in parallel by wiring 46. Therefore, the output voltage of the power generation unit 4 is the same as the output voltage of the solar battery cell 40.
  • the output voltage of the solar battery cell 40 can be changed by changing the material of the light absorption layer 43 or the number of light absorption layers 43 (number of grooves 47). Therefore, the output voltage of the power generation unit 4 can be changed by changing the output voltage of the solar battery cell 40.
  • the insulating unit 5 is provided between the power generation unit 4 and the power generation unit 6.
  • the insulating unit 5 insulates between the power generation unit 4 and the power generation unit 6.
  • the insulating unit 5 transmits light incident on the insulating unit 5.
  • the insulating unit 5 joins the power generation unit 4 and the power generation unit 6. Therefore, the insulation part 5 has translucency and insulation, and also has a joining function.
  • the insulating part 5 can be provided with an adhesive layer made of an acrylic resin on the surface of a substrate made of alkali-free glass or quartz glass, for example.
  • the power generation unit 6 is provided on the side opposite to the light incident side of the power generation unit 4.
  • the power generation unit 6 is opposed to the power generation unit 4 via the insulating unit 5. That is, the solar cell module 1 has a tandem structure in which a power generation unit 4 (top cell) that absorbs light on the short wavelength side and a power generation unit 6 (bottom cell) that absorbs light on the long wavelength side are stacked.
  • the power generation unit 6 includes a plurality of solar cells 60 and a wiring 66 that electrically connects the plurality of solar cells 60 in series.
  • the solar battery cell 60 absorbs light (mainly long wavelength light) transmitted through the solar battery cell 40 and converts it into electric power.
  • FIG. 5 is a schematic plan view for illustrating the solar battery cell 60.
  • the antireflection film 65 is omitted in order to avoid complication.
  • FIGS. 6A and 6B are schematic cross-sectional views for illustrating the solar battery cell 60.
  • FIG. 6A is a cross-sectional view taken along line AA in FIG.
  • FIG. 6B is a cross-sectional view taken along line BB in FIG.
  • the solar battery cell 60 has a grid type structure.
  • the solar cell 60 is provided with a light absorption layer 61, an electrode 62, a grid electrode 63, a wiring connection electrode 64, and an antireflection film 65.
  • the light absorption layer 61 has a band gap smaller than that of the light absorption layer 43.
  • the light absorption layer 61 is preferably formed using a material having a band gap of 1.0 eV or more and 1.4 eV or less.
  • the light absorption layer 61 can be formed using crystalline silicon such as single crystal silicon, polycrystalline silicon, or microcrystalline silicon.
  • the solar battery cell 60 is a crystalline silicon solar battery cell.
  • the light absorption layer 61 can be formed using a compound semiconductor containing Cu, In, Ga, and Se and having a high In content.
  • the solar battery cell 60 is a CIGS solar battery cell having a large In content.
  • the light absorption layer 61 can be formed using CuInTe 2 (CIT).
  • the solar battery cell 60 is a CIT solar battery cell.
  • the light absorption layer 61 can be formed using a compound semiconductor containing Cd and Te. In this case, the solar battery cell 60 is a CdTe solar battery cell.
  • the light absorption layer 61 is a p-type silicon substrate. Concavities and convexities are formed on the light receiving surface 61 a of the light absorption layer 61. Further, an n-type semiconductor layer 61b formed by diffusing impurities such as phosphorus is provided in the surface region of the light absorption layer 61 on the light receiving surface 61a side. A p + -type semiconductor layer 61c having a high impurity concentration is provided on the side of the light absorption layer 61 opposite to the side on which the n-type semiconductor layer 61b is provided.
  • the electrode 62 is provided so as to cover the p + -type semiconductor layer 61c.
  • the electrode 62 is formed using a conductive material such as aluminum or silver.
  • the electrode 62 becomes a plus (+) electrode.
  • the light absorption layer 61 may be an n-type silicon substrate.
  • a p-type semiconductor layer formed by diffusing impurities such as boron is provided instead of the n-type semiconductor layer 61b.
  • an n + type semiconductor layer having a high impurity concentration is provided.
  • the light absorption layer 61 is an n-type silicon substrate, the conversion efficiency can be increased. In the case where the light absorption layer 61 is a p-type silicon substrate, the manufacturing cost can be reduced.
  • a plurality of grid electrodes 63 are provided on the light receiving surface 61a (on the n-type semiconductor layer 61b).
  • the grid electrode 63 has a linear shape and extends in a direction orthogonal to the direction in which the wiring connection electrode 64 extends.
  • the plurality of grid electrodes 63 are provided over the entire light receiving surface 61a in order to efficiently extract the electric power generated in the light absorption layer 61.
  • the grid electrode 63 is formed using a conductive material such as aluminum or silver, the light incident on the light receiving surface 61 a is blocked by the grid electrode 63. Therefore, it is preferable to make the width dimension of the grid electrode 63 as short as possible.
  • a plurality of wiring connection electrodes 64 are provided on the light receiving surface 61a (on the n-type semiconductor layer 61b).
  • the wiring connection electrode 64 has a linear shape and extends in a direction in which the plurality of solar battery cells 60 are electrically connected in series.
  • the wiring connection electrode 64 has a lower end electrically connected to the n-type semiconductor layer 61 b and an upper end exposed from the antireflection film 65. Further, the wiring connection electrode 64 is electrically connected to the grid electrode 63.
  • the wiring connection electrode 64 is formed using a conductive material such as aluminum or silver.
  • the wiring connection electrode 64 is a negative ( ⁇ ) electrode.
  • the antireflection film 65 is provided so as to cover an exposed portion of the light receiving surface 61a (a region where the grid electrode 63 and the wiring connection electrode 64 are not provided).
  • the antireflection film 65 can be formed from, for example, silicon oxide.
  • the solar battery cell 60 having the above configuration can be manufactured using, for example, a semiconductor manufacturing process.
  • FIG. 7 is a schematic plan view for illustrating connection of a plurality of solar cells 60.
  • 8 is a cross-sectional view taken along line AA in FIG.
  • the plurality of solar cells 60 are electrically connected in series by wiring 66.
  • the output voltage of the power generation unit 6 is (output voltage of the solar battery cell 60) ⁇ (number of connected solar battery cells 60).
  • the output voltage of the crystalline silicon solar cell is generally about 0.65V. Therefore, the output voltage of the power generation unit 6 is set to a desired value by electrically connecting a plurality of solar cells 60 in series. In this case, the output voltage of the power generation unit 6 can be changed by changing the number of connected solar cells 60 or the material of the light absorption layer 61.
  • the power generation unit 4 and the power generation unit 6 are electrically connected in parallel.
  • the sealing part 7 is provided between the protection part 8 and the power generation part 6.
  • the sealing part 7 may be filled also between several photovoltaic cells 60.
  • FIG. The sealing unit 7 seals the side opposite to the light receiving surface side of the power generation unit 6.
  • the sealing unit 7 suppresses, for example, water vapor or gas included in the environment where the solar cell module 1 is installed from reaching the power generation unit 6.
  • the sealing unit 7 joins the protection unit 8 and the power generation unit 6 together.
  • the sealing part 7 can also have a function which absorbs the impact from the outside.
  • the material of the sealing part 7 can be the same as the material of the sealing part 3.
  • the protection unit 8 has a plate shape and faces the protection unit 2.
  • the protection unit 8 is sometimes called a back sheet.
  • the material of the protection part 8 can be the same as the material of the protection part 2. However, unlike the protection unit 2 described above, the protection unit 8 does not need to transmit light. Therefore, the protection part 8 can also be formed from a material with a high reflectance with respect to light.
  • the protection unit 8 can be formed using, for example, a white resin. If the protection part 8 is formed from a material having a high reflectance with respect to light, the light introduced into the solar cell module 1 via the protection part 2 and reaching the protection part 8 is directed toward the power generation part 4 and the power generation part 6. Can be reflected. Therefore, the light use efficiency can be improved.
  • the power generation unit 4 and the power generation unit 6 are electrically connected in parallel. Therefore, the output voltage of the solar cell module 1 is the lower one of the output voltage of the power generation unit 4 and the output voltage of the power generation unit 6. In this case, when the difference between the output voltage of the power generation unit 4 and the output voltage of the power generation unit 6 increases, loss may increase and conversion efficiency may decrease.
  • the output voltage of the power generation unit 4 can be changed by changing the material of the light absorption layer 43 or the number of light absorption layers 43 (number of grooves 47).
  • the output voltage of the power generation unit 6 can be changed by changing the number of connected solar cells 60 or the material of the light absorption layer 61. Therefore, the difference between the output voltage of the power generation unit 4 and the output voltage of the power generation unit 6 can be reduced by adjusting at least one of the output voltage of the power generation unit 4 and the output voltage of the power generation unit 6.
  • Table 1 is a table for illustrating adjustment of the output voltage in the power generation unit 4 and the power generation unit 6.
  • Table 1 shows a case where the light absorption layer 43 is made of a compound semiconductor containing Cu, In, Ga, and Se and having a high Ga content, and the light absorption layer 61 is made of crystalline silicon.
  • the output voltage of the power generation unit 4 was able to be 19.5 V by changing the number of light absorption layers 43 (number of grooves 47).
  • the output voltage of the power generation unit 6 was able to be 19.5 V by changing the number of connected solar cells 60. That is, by connecting 30 solar cells 60 with an output voltage of 0.65V in series, the output voltage of the power generation unit 6 could be 19.5V.
  • FIG. 9 is a graph for illustrating the relationship among the conversion efficiency of the solar battery cell 40, the band gap of the light absorption layer 43, and the conversion efficiency of the solar battery module 1.
  • A1 in FIG. 9 is a case where the conversion efficiency of the solar cell module 1 is 26%.
  • A2 is a case where the conversion efficiency of the solar cell module 1 is 24%.
  • A3 is a case where the conversion efficiency of the solar cell module 1 is 22%.
  • A4 is a case where the conversion efficiency of the solar cell module 1 is 20%.
  • B is the conversion efficiency of the solar battery cell 60 taking into account the amount of light absorption in the solar battery cell 40.
  • FIG. 9 shows the results obtained by simulation.
  • the output voltage of the power generation unit 4 and the output voltage of the power generation unit 6 are assumed to be equal.
  • the solar battery cell 60 was a CIGS solar battery cell.
  • the band gap of the light absorption layer 61 was 1.1 eV.
  • the conversion efficiency of the solar battery cell 60 was 20.0%. If the output voltage of the power generation unit 4 is equal to the output voltage of the power generation unit 6, the same result can be expected even if the material of the light absorption layer 61 is changed.
  • the wavelength region of light incident on the solar battery cell 60 is widened as the band gap of the light absorption layer 43 is increased. . Therefore, as can be seen from B in FIG. 9, the conversion efficiency of the solar battery cell 60 increases as the band gap of the light absorption layer 43 increases. As a result, as can be seen from A1 to A4 in FIG. 9, the conversion efficiency of the solar battery cell 40 required to make the solar battery module 1 having a high conversion efficiency of 20% to 26% decreases. Moreover, when the band gap of the light absorption layer 43 exceeds 1.7 eV, as can be seen from B in FIG. 9, the conversion efficiency of the solar battery cell 60 decreases.
  • the band gap of the light absorption layer 43 is increased, the wavelength region of light incident on the solar cell 60 is widened, so that the conversion efficiency of the solar cell 60 may be increased.
  • the power generation unit 4 and the power generation unit 6 are electrically connected in series, the value of the current flowing through the solar battery cell 40 and the value of the current flowing through the solar battery cell 60 are the same.
  • the band gap of the light absorption layer 43 becomes large, the value of the electric current which flows into the photovoltaic cell 40 becomes small. Therefore, when the band gap of the light absorption layer 43 increases, the value of the current flowing through the solar battery cell 60 decreases. As a result, when the band gap of the light absorption layer 43 exceeds 1.7 eV, the conversion efficiency of the solar battery cell 60 is reduced.
  • FIG. 10 is a graph for illustrating the relationship among the conversion efficiency of the solar battery cell 40, the band gap of the light absorption layer 43, and the conversion efficiency of the solar battery module 1. In addition, it is the same as that of the case of FIG. 9 except connecting the electric power generation part 4 and the electric power generation part 6 electrically in parallel.
  • the band gap of the light absorption layer 43 is in the range of 1.2 eV to 1.7 eV, the same result as in FIG. 9 is obtained.
  • the band gap of the light absorption layer 43 exceeds 1.7 eV, as can be seen from B in FIG.
  • the conversion efficiency of the solar battery cell 60 further increases. If the power generation unit 4 and the power generation unit 6 are electrically connected in parallel, even if the value of the current flowing through the solar battery cell 40 is reduced, the value of the current flowing through the solar battery cell 60 is not similarly reduced. Therefore, even if the band gap of the light absorption layer 43 exceeds 1.7 eV, the conversion efficiency of the solar battery cell 60 further increases. As a result, as can be seen from A1 to A4 in FIG. 10, the solar cell module 1 required to obtain a high conversion efficiency of 20% to 26% in a wide range of the band gap of the light absorption layer 43 is obtained. The conversion efficiency of the battery cell 40 decreases. This also means that the degree of freedom for designing the solar cell module 1 is increased.
  • FIGS. 11 and 12 are graphs for illustrating the relationship between the conversion efficiency of the solar battery module 1, the region where the conversion efficiency of the solar battery cell 40 is less than the theoretical value, the band gap of the light absorption layer 43, and the conversion efficiency of the solar battery module 1. is there.
  • FIG. 11 shows a case where the power generation unit 4 and the power generation unit 6 are electrically connected in series.
  • FIG. 12 shows a case where the power generation unit 4 and the power generation unit 6 are electrically connected in parallel.
  • the region below “1” on the vertical axis is a region where the conversion efficiency of the solar battery cell 40 is less than or equal to the theoretical value. 11 and 12 are compared, the conversion efficiency in the case of FIG.
  • the solar cell module 1 having can be configured. That is, if the power generation unit 4 and the power generation unit 6 are electrically connected in parallel, the solar cell module 1 having high conversion efficiency can be easily obtained. This means that the degree of freedom for designing the solar cell module 1 is increased.
  • the output voltage of the power generation unit 4 can be set by the number of light absorption layers 43 provided in the solar battery cell 40 (the number of grooves 47). Therefore, if one solar battery cell 40 is provided, the effects described in FIGS. 9 to 12 can be obtained.
  • the plurality of light absorption layers 43 are electrically connected in series by the electrode 42 and the electrode 45. Therefore, in the case where the number of the solar battery cells 40 is one, if a part of the electrode 42, the electrode 45, and the light absorption layer 43 is damaged, the power supply from the power generation unit 4 may be stopped.
  • a plurality of solar cells 40 are electrically connected in parallel.
  • the effects described in FIGS. 9 to 12 can be obtained.

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
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  • Photovoltaic Devices (AREA)

Abstract

Le module de cellule solaire selon un mode de réalisation de la présente invention comporte : une première unité de génération d'énergie qui comprend une pluralité de premières cellules solaires connectées électriquement en parallèle les unes aux autres ; et une seconde unité de génération d'énergie qui comprend une pluralité de secondes cellules solaires connectées électriquement en série les unes aux autres, qui est disposée sur le côté opposé du côté incidence de lumière de la première unité de génération d'énergie, et qui est électriquement connectée en parallèle à la première unité de génération d'énergie. Les premières cellules solaires ont une pluralité de premières couches d'absorption de lumière connectées électriquement en série les unes aux autres.
PCT/JP2015/068351 2015-06-25 2015-06-25 Module de cellule solaire WO2016208034A1 (fr)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111697094A (zh) * 2020-05-11 2020-09-22 成都中建材光电材料有限公司 透光型双面碲化镉发电玻璃及其制备方法
WO2024071284A1 (fr) * 2022-09-28 2024-04-04 株式会社カネカ Procédé de production de module de cellule solaire et module de cellules solaires

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008211217A (ja) * 2007-02-26 2008-09-11 Lg Electronics Inc 薄膜型太陽電池及びその製造方法
JP2010087504A (ja) * 2008-10-01 2010-04-15 Internatl Business Mach Corp <Ibm> 太陽エネルギー変換デバイス
JP2011526737A (ja) * 2008-07-03 2011-10-13 アイメック 多重接合太陽電池モジュールおよびそのプロセス
JP2012044024A (ja) * 2010-08-20 2012-03-01 Mitsubishi Chemicals Corp 太陽電池モジュール
JP2013089749A (ja) * 2011-10-18 2013-05-13 Fujifilm Corp フレームレス太陽電池モジュール

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008211217A (ja) * 2007-02-26 2008-09-11 Lg Electronics Inc 薄膜型太陽電池及びその製造方法
JP2011526737A (ja) * 2008-07-03 2011-10-13 アイメック 多重接合太陽電池モジュールおよびそのプロセス
JP2010087504A (ja) * 2008-10-01 2010-04-15 Internatl Business Mach Corp <Ibm> 太陽エネルギー変換デバイス
JP2012044024A (ja) * 2010-08-20 2012-03-01 Mitsubishi Chemicals Corp 太陽電池モジュール
JP2013089749A (ja) * 2011-10-18 2013-05-13 Fujifilm Corp フレームレス太陽電池モジュール

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111697094A (zh) * 2020-05-11 2020-09-22 成都中建材光电材料有限公司 透光型双面碲化镉发电玻璃及其制备方法
WO2024071284A1 (fr) * 2022-09-28 2024-04-04 株式会社カネカ Procédé de production de module de cellule solaire et module de cellules solaires

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