WO2016201896A1 - 一种e类功率放大器的等效电感电路及器件参数获取方法 - Google Patents

一种e类功率放大器的等效电感电路及器件参数获取方法 Download PDF

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WO2016201896A1
WO2016201896A1 PCT/CN2015/095532 CN2015095532W WO2016201896A1 WO 2016201896 A1 WO2016201896 A1 WO 2016201896A1 CN 2015095532 W CN2015095532 W CN 2015095532W WO 2016201896 A1 WO2016201896 A1 WO 2016201896A1
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impedance line
power amplifier
class
high impedance
transistor
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PCT/CN2015/095532
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English (en)
French (fr)
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吴光胜
马建国
成千福
朱守奎
邬海峰
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深圳市华讯方舟科技有限公司
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/217—Class D power amplifiers; Switching amplifiers
    • H03F3/2176—Class E amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/217—Class D power amplifiers; Switching amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/391—Indexing scheme relating to amplifiers the output circuit of an amplifying stage comprising an LC-network

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  • the invention belongs to the field of power amplifiers, and in particular relates to an equivalent inductance circuit of a class E power amplifier and a method for acquiring device parameters.
  • the RF power amplifier is precisely the most energy-consuming module in the wireless transmitting terminal. Therefore, the efficiency of the power amplifier directly determines the energy consumption level of the entire transmitting terminal. Therefore, improving the working efficiency of power amplifiers has become a hot spot in the research field of power amplifiers.
  • Class E power amplifiers have been widely researched and applied in the field of RF microwave in recent years due to their ideal working efficiency of 100% and simple structure and easy implementation.
  • the high efficiency characteristics of Class E power amplifiers are largely dependent on the characteristics of the transistors. Among them, the output capacitance inside the transistor is the most important factor limiting the operating frequency of the class E power amplifier. How to solve the limitation of the operating frequency caused by the excess output capacitance of the transistor is a hot spot in the field of class E power amplifiers in recent years.
  • the most popular way to solve this problem is to use an external circuit to compensate for the excess capacitance to extend the operating frequency of the Class E power amplifier.
  • the prior art adopts an equivalent circuit of lumped parameters, respectively matching the excess output capacitance of the transistor at the fundamental wave and the 2nd to 3rd harmonic points, and can well match the drain output capacitance at the ultra high frequency to achieve a better circuit. performance.
  • the prior art has the following drawbacks: the use of the matching technique in the microwave band is subject to many limitations due to the use of lumped parameter elements.
  • the invention provides an equivalent inductance circuit and a device parameter acquisition method for a class E power amplifier, aiming at solving the technical problem that the equivalent inductance circuit of the existing class E power amplifier is not suitable for the microwave frequency band.
  • the present invention is achieved by an equivalent inductance circuit of a class E power amplifier comprising a high impedance line and a low impedance line, the first end of the high impedance line being connected to the drain of the transistor, the first of the high impedance line The two ends are connected to the first end of the low impedance line, and the second end of the low impedance line is connected to the drain DC power source.
  • the invention also provides a class E power amplifier comprising an equivalent inductive circuit as described above.
  • the present invention also provides a device parameter acquisition method for an equivalent inductance circuit of a class E power amplifier, comprising:
  • design parameters of the class E power amplifier including a theoretical required inductance value and a capacitance coefficient of the class E power amplifier, the capacitance coefficient being a ratio of excess capacitance to theoretically required capacitance;
  • the parameters of the high impedance line and the parameters of the low impedance line are calculated using the following system of nonlinear equations:
  • L is the theoretical required inductance value of the class E power amplifier
  • ⁇ 0 is the angular frequency of the fundamental wave
  • Z 0 is the characteristic impedance of the high impedance line
  • M is the ratio of the characteristic impedance of the high impedance line to the characteristic impedance of the low impedance line
  • the class E power amplifier is applied to the low frequency to high frequency microwave band.
  • FIG. 1 is a circuit diagram showing an example of an equivalent inductance circuit of a class E power amplifier according to an embodiment of the present invention
  • FIG. 2 is an equivalent circuit diagram of an equivalent inductance circuit of a class E power amplifier according to an embodiment of the present invention.
  • An embodiment of the present invention provides a structure of an equivalent inductance circuit Lnex of a class E power amplifier, as shown in FIG. 1, including a high impedance line I1 and a low impedance line I2.
  • the first end of the high impedance line I1 is connected to the drain of the transistor.
  • the second end of the high impedance line I1 is connected to the first end of the low impedance line I2, and the second end of the low impedance line I2 is connected to the drain DC power source.
  • the impedance of the high impedance line may be greater than the impedance of the low impedance line.
  • the impedance of the high impedance line is 50 ohms.
  • the electrical length of the high impedance line is equal to the electrical length of the low impedance line.
  • an equivalent inductance circuit composed of a high impedance line and a low impedance line is equivalent to a fundamental wave and a second harmonic parallel inductance.
  • a class E power amplifier comprising an equivalent inductive circuit as described above.
  • the class E power amplifier further includes a transistor Q, an output capacitor Cout, a drain bias power supply Vdd, a gate bias power supply Vgg, an input voltage Vin, a load resistor R0, a series filter capacitor C0, and a series filter inductor L0.
  • the transistor Q includes an output capacitor Cout connected between the drain of the transistor Q and the source of the transistor Q.
  • the drain of the transistor Q is connected to the first terminal of the series filter inductor L0, the gate of the transistor Q is connected to the anode of the input voltage Vin, the source of the transistor Q and the first terminal of the load resistor R0 and the drain bias power supply Vdd
  • the negative pole is connected, the negative pole of the input voltage Vin is connected to the positive pole of the gate bias power supply Vgg, the second end of the series filter inductor L0 is connected to the first end of the series filter capacitor C0, the second end of the load resistor R0 and the series filter capacitor C0 The second end of the connection.
  • the output capacitor Cout is determined by the selected transistor; the drain bias power supply Vdd and the gate bias power supply Vgg are determined by the required output power of the selection transistor, and the load resistor R0, the series filter capacitor C0, and the series filter inductor L0 are operated by the frequency. And the class E amplifier working mode is decided.
  • Embodiments of the present invention provide a device parameter acquisition method for an equivalent inductance circuit of a class E power amplifier, including the following steps:
  • the design parameters include the theoretical required inductance value and capacitance coefficient of the class E power amplifier, and the capacitance coefficient is the ratio of the excess capacitance to the theoretical required capacitance.
  • L is the theoretical required inductance value of the class E power amplifier
  • ⁇ 0 is the angular frequency of the fundamental wave
  • Z 0 is the characteristic impedance of the high impedance line
  • M is the ratio of the characteristic impedance of the high impedance line and the characteristic impedance of the low impedance line
  • ⁇ is both the high impedance line and the low impedance.
  • step 101-2 is further included before step 102.
  • an embodiment of the present invention provides an equivalent circuit diagram of an equivalent inductance circuit of a class E power amplifier, including an equivalent inductance Lnex of an equivalent inductance circuit, a transistor Q, a theoretical required capacitance C, and a theoretical required inductance L.
  • transistor Q includes theoretically required capacitance C and excess capacitance Cex, the theoretical required capacitance C is connected between the drain of the transistor Q and the source of the transistor Q, and the excess capacitance Cex is connected between the drain of the transistor Q and the source of the transistor Q.
  • the drain of the transistor Q is connected to the first end of the series filter inductor L0 and the first end of the equivalent inductor Lnex, the gate of the transistor Q is connected to the anode of the input voltage Vin, the source of the transistor Q is a first end of the load resistor R0 is connected to a cathode of the drain bias power supply Vdd, a cathode of the input voltage Vin is connected to a positive pole of the gate bias power source Vgg, and a second end of the series filter inductor L0 Connected to the first end of the series filter capacitor C0, the second end of the load resistor R0 and the string The second end of the parallel filter capacitor C0 is connected, and the second end of the equivalent inductor Lnex is connected to the anode of the drain bias power supply Vdd.
  • the equivalent inductance circuit is equivalent to the equivalent inductance Lnex, and the above nonlinear equations can be obtained to calculate the parameters of the high impedance line and the parameters of the low impedance line of the equivalent inductance circuit.
  • ⁇ 0 and 2 ⁇ 0 are the angular frequencies of the fundamental and second harmonics, respectively, and the capacitance coefficient for
  • the value range of M is: M>1.
  • the specific value (such as 50 ⁇ ) of the characteristic impedance Z 0 of the high-impedance line may be selected first, and then the ratio M of the characteristic impedance of the high-impedance line and the characteristic impedance of the low-impedance line, and the high-impedance line and low are solved.
  • the electrical length ⁇ of the impedance line may be selected first, and then the ratio M of the characteristic impedance of the high-impedance line and the characteristic impedance of the low-impedance line, and the high-impedance line and low are solved.
  • the transistor Q can be selected from a 10W LDMOS transistor of the type MRF21010.
  • the class E power amplifier is designed to have an operating frequency of 433MHz, a drain bias voltage of 20V, and an output power of 10W
  • the output capacitor Cout inside the transistor is 10pF and the gate bias voltage is 3V.
  • the excess capacitance Cex is calculated to be 5.389pF, and the capacitance coefficient. It is 1.169.
  • the parameters of the equivalent inductance circuit of the class E power amplifier are calculated as follows: the characteristic impedance of the high impedance line is 50 ⁇ , the characteristic impedance of the low impedance line is 41.79 ⁇ , and the high impedance line and the low impedance line are The length is 102.261°.
  • the embodiment of the present invention includes a high impedance line and a low impedance line.
  • the first end of the high impedance line is connected to the drain of the transistor, and the second end of the high impedance line is connected to the first end of the low impedance line.
  • the second end of the impedance line is connected to the DC power supply of the drain, and the equivalent inductance circuit is realized by using the distributed parameter component. Therefore, the Class E power amplifier is applied to the microwave band of the low frequency to the high frequency.
  • a person skilled in the art may understand that all or part of the steps of implementing the above embodiments may be completed by hardware, or may be instructed by a program to execute related hardware, and the program may be stored in a computer readable storage medium.
  • the storage medium mentioned may be a read only memory, a magnetic disk or an optical disk or the like.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)

Abstract

一种E类功率放大器的等效电感电路（Lnex）及器件参数获取方法，该E类功率放大器的等效电感电路（Lnex）包括高阻抗线（I1）和低阻抗线（I2），高阻抗线（I1）的第一端与晶体管漏极连接，高阻抗线（I1）的第二端与低阻抗线（I2）的第一端连接，低阻抗线（I2）的第二端与漏极直流电源（Vdd）连接。通过高阻抗线（I1）和低阻抗线（I2）构成的等效电感电路（Lnex），使E类功率放大器适用于低频至高频的微波波段。

Description

一种E类功率放大器的等效电感电路及器件参数获取方法 技术领域
本发明属于功率放大器领域，特别涉及一种E类功率放大器的等效电感电路及器件参数获取方法。
背景技术
目前，移动通信服务的快速发展对低能耗、高效率的器件设计提出了更高的要求。而射频功率放大器恰恰是无线发射终端中耗能最大的模块。因此功率放大器的效率直接决定了整个发射终端的能耗量级。所以，提高功率放大器的工作效率成为功率放大器研究领域的热点。
E类功率放大器因其理想工作效率能够达到100％而结构简单、容易实现等优点，近年来，在射频微波领域受到了广泛的研究和应用。然而，在实际情况中，E类功率放大器的高效率特性很大程度上依赖于晶体管的特性。其中，晶体管内部的输出电容是限制E类功率放大器工作频率最重要的一个因素。如何解决晶体管内部输出电容多余而带来的工作频率的限制，是近年来E类功率放大器领域内研究的一个热点。
由于给定的晶体管内部的参数都是固定的，所以解决此问题的最流行的方法是利用外部电路来补偿多余的电容，来拓展E类功率放大器的工作频率。现有技术采用集总参数的等效电路，分别在基波和2～3次谐波点匹配晶体管的多余输出电容，在超高频处能很好地匹配漏极输出电容，实现较好电路性能。
现有技术具有以下缺陷：由于采用的是集总参数元件，使得该匹配技术在微波频段下的使用受到了诸多限制。
技术问题
本发明提供了一种E类功率放大器的等效电感电路及器件参数获取方法，旨在解决现有的E类功率放大器的等效电感电路不适用于微波频段的技术问题。
技术解决方案
本发明是这样实现的，一种E类功率放大器的等效电感电路，包括高阻抗线和低阻抗线，所述高阻抗线的第一端与晶体管漏极连接，所述高阻抗线的第二端与所述低阻抗线的第一端连接，所述低阻抗线的第二端与漏极直流电源连接。
另一方面，本发明还提供了一种E类功率放大器，包括如上述的等效电感电路。
另一方面，本发明还提供了一种的E类功率放大器的等效电感电路的器件参数获取方法，包括：
确定所述E类功率放大器的设计参数，所述设计参数包括所述E类功率放大器的理论所需电感值和电容系数，所述电容系数为多余的电容和理论所需电容的比值；
使用下述非线性方程组计算所述高阻抗线的参数和所述低阻抗线的参数：
Figure PCTCN2015095532-appb-000001
Figure PCTCN2015095532-appb-000002
其中L为所述E类功率放大器的理论所需电感值，
Figure PCTCN2015095532-appb-000003
为所述电容系数，ω0为基波的角频率，Z0为所述高阻抗线的特征阻抗，M为所述高阻抗线的特征阻抗和所述低阻抗线的特征阻抗的比值，θ同时为所述高阻抗线和所述低阻抗线的电长度。
有益效果
本发明提供的技术方案带来的有益效果是：
从上述本发明可知，由于包括高阻抗线和低阻抗线，高阻抗线的第一端与晶体管漏极连接，高阻抗线的第二端与低阻抗线的第一端连接，低阻抗线的第二端与漏极直流电源连接，使用分布参数元件实现等效电感电路，因此，使E类功率放大器适用于低频至高频的微波波段。
附图说明
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本发明实施例提供的E类功率放大器的等效电感电路的示例电路图；
图2为本发明实施例提供的E类功率放大器的等效电感电路的等效电路图。
具体实施方式
为使本发明的目的、技术方案和优点更加清楚，下面将结合附图对本发明实施方式作进一步地详细描述。
本发明实施例提供E类功率放大器的等效电感电路Lnex的一种结构，如图1所示，包括高阻抗线I1和低阻抗线I2，高阻抗线I1的第一端与晶体管漏极连接，高阻抗线I1的第二端与低阻抗线I2的第一端连接，低阻抗线I2的第二端与漏极直流电源连接。
具体实施中，高阻抗线的阻抗可以大于低阻抗线的阻抗。
具体实施中，高阻抗线的阻抗为50欧姆。
具体实施中，高阻抗线的电长度与低阻抗线的电长度相等。
具体实施中，高阻抗线和低阻抗线组成的等效电感电路等效于基波和二次谐波并联电感。
一种E类功率放大器，包括如上述的等效电感电路。
如图1所示，E类功率放大器还包括晶体管Q、输出电容Cout、漏极偏置电源Vdd、栅极偏置电源Vgg、输入电压Vin、负载电阻R0、串联滤波电容C0以及串联滤波电感L0，晶体管Q包括输出电容Cout，输出电容Cout连接于晶体管Q的漏极和晶体管Q的源极之间。
晶体管Q的漏极与串联滤波电感L0的第一端连接，晶体管Q的栅极与输入电压Vin的正极连接，晶体管Q的源极与负载电阻R0的第一端和漏极偏置电源Vdd的负极连接，输入电压Vin的负极与栅极偏置电源Vgg的正极连接，串联滤波电感L0的第二端与串联滤波电容C0的第一端连接，负载电阻R0的第二端与串联滤波电容C0的第二端连接。
其中，输出电容Cout由选择的晶体管决定；漏极偏置电源Vdd和栅极偏置电源Vgg由选择晶体管的所需输出功率决定，负载电阻R0、串联滤波电容C0和串联滤波电感L0由工作频率和E类功放工作模式决定。
本发明实施例提供E类功率放大器的等效电感电路的器件参数获取方法，包括以下步骤：
101：确定E类功率放大器的设计参数，设计参数包括E类功率放大器的理论所需电感值和电容系数，电容系数为多余的电容和理论所需电容的比值。
102：使用下述非线性方程组计算高阻抗线的参数和低阻抗线的参数：
Figure PCTCN2015095532-appb-000004
Figure PCTCN2015095532-appb-000005
其中L为E类功率放大器的理论所需电感值，
Figure PCTCN2015095532-appb-000006
为电容系数，ω0为基波的角频率，Z0为高阻抗线的特征阻抗，M为高阻抗线的特征阻抗和低阻抗线的特征阻抗的比值，θ同时为高阻抗线和低阻抗线的电长度。
优选的，在步骤102之前还包括步骤101-2。
101-2：预设高阻抗线的特征阻抗。
如图2所示，本发明实施例提供E类功率放大器的等效电感电路的等效电路图，包括等效电感电路的等效电感Lnex、晶体管Q、理论所需电容C、理论所需电感L、多余的电容Cex、漏极偏置电源Vdd、栅极偏置电源Vgg、输入电压Vin、负载电阻R0、串联滤波电容C0以及串联滤波电感L0，晶体管Q包括理论所需电容C和多余的电容Cex，理论所需电容C连接于晶体管Q的漏极和晶体管Q的源极之间，多余的电容Cex连接于晶体管Q的漏极和晶体管Q的源极之间。
晶体管Q的漏极与串联滤波电感L0的第一端和等效电感Lnex的第一端连接，晶体管Q的栅极与所述输入电压Vin的正极连接，所述晶体管Q的源极与所述负载电阻R0的第一端和所述漏极偏置电源Vdd的负极连接，所述输入电压Vin的负极与所述栅极偏置电源Vgg的正极连接，所述串联滤波电感L0的第二端与所述串联滤波电容C0的第一端连接，所述负载电阻R0的第二端与所述串 联滤波电容C0的第二端连接，等效电感Lnex的第二端与漏极偏置电源Vdd的正极连接。
将等效电感电路等效为等效电感Lnex，即可得到上述非线性方程组以计算等效电感电路的高阻抗线的参数和低阻抗线的参数。其中，ω0和2ω0分别为基波和二次谐波的角频率，电容系数
Figure PCTCN2015095532-appb-000007
为
Figure PCTCN2015095532-appb-000008
具体实施中，M的取值范围为：M＞1。
具体实施中，可先选定高阻抗线的特征阻抗Z0的具体取值(如50Ω)，再求解高阻抗线的特征阻抗和低阻抗线的特征阻抗的比值M，以及高阻抗线和低阻抗线的电长度θ。
具体实施中，晶体管Q可选用型号为MRF21010的10W的LDMOS晶体管。当设计的E类功率放大器的指标为：工作频率为433MHz，漏极偏置电压为20V，输出功率为10W，晶体管内部的输出电容Cout为10pF，栅极偏置电压为3V。由此，计算得到多余的电容Cex为5.389pF，电容系数
Figure PCTCN2015095532-appb-000009
为1.169。取Z0＝50Ω，计算得出E类功率放大器的等效电感电路的参数如下：高阻抗线的特征阻抗为50Ω，低阻抗线的特征阻抗为41.79Ω，高阻抗线和低阻抗线的电长度为102.261°。
综上所述，本发明实施例通过包括高阻抗线和低阻抗线，高阻抗线的第一端与晶体管漏极连接，高阻抗线的第二端与低阻抗线的第一端连接，低阻抗线的第二端与漏极直流电源连接，使用分布参数元件实现等效电感电路，因此，使E类功率放大器适用于低频至高频的微波波段。
上述本发明实施例序号仅仅为了描述，不代表实施例的优劣。
本领域普通技术人员可以理解实现上述实施例的全部或部分步骤可以通过硬件来完成，也可以通过程序来指令相关的硬件完成，所述的程序可以存储于一种计算机可读存储介质中，上述提到的存储介质可以是只读存储器，磁盘或光盘等。
以上所述仅为本发明的较佳实施例，并不用以限制本发明，凡在本发明的精神和原则之内，所作的任何修改、等同替换、改进等，均应包含在本发明的保护范围之内。

Claims (10)

  1. 一种E类功率放大器的等效电感电路，其特征在于，包括高阻抗线和低阻抗线，所述高阻抗线的第一端与晶体管漏极连接，所述高阻抗线的第二端与所述低阻抗线的第一端连接，所述低阻抗线的第二端与漏极直流电源连接。
  2. 如权利要求1所述的E类功率放大器的等效电感电路，其特征在于，所述高阻抗线的阻抗大于所述低阻抗线的阻抗。
  3. 如权利要求1所述的E类功率放大器的等效电感电路，其特征在于，所述高阻抗线的阻抗为50欧姆。
  4. 如权利要求1所述的E类功率放大器的等效电感电路，其特征在于，所述高阻抗线的电长度与所述低阻抗线的电长度相等。
  5. 如权利要求1所述的E类功率放大器的等效电感电路，其特征在于，所述高阻抗线和所述低阻抗线组成的等效电感电路等效于基波和二次谐波并联电感。
  6. 一种E类功率放大器，其特征在于，所述E类功率放大器包括如权利要求1至5任一项所述的等效电感电路。
  7. 如权利要求6所述的E类功率放大器，其特征在于，所述E类功率放大器还包括晶体管、输出电容、漏极偏置电源、栅极偏置电源、输入电压、负载电阻、串联滤波电容以及串联滤波电感，所述晶体管包括输出电容，所述输出电容连接于所述晶体管的漏极和所述晶体管的源极之间；
    所述晶体管的漏极与所述串联滤波电感的第一端连接，所述晶体管的栅极与所述输入电压的正极连接，所述晶体管的源极与所述负载电阻的第一端和所述漏极偏置电源的负极连接，所述输入电压的负极与所述栅极偏置电源的正极连接，所述串联滤波电感的第二端与所述串联滤波电容的第一端连接，所述负载电阻的第二端与所述串联滤波电容的第二端连接。
  8. 一种权利要求1所述的E类功率放大器的等效电感电路的器件参数获取方法，其特征在于，包括：
    确定所述E类功率放大器的设计参数，所述设计参数包括所述E类功率放大器的理论所需电感值和电容系数，所述电容系数为多余的电容和理论所需电容的比值；
    使用下述非线性方程组计算所述高阻抗线的参数和所述低阻抗线的参数：
    Figure PCTCN2015095532-appb-100001
    Figure PCTCN2015095532-appb-100002
    其中L为所述E类功率放大器的理论所需电感值，
    Figure PCTCN2015095532-appb-100003
    为所述电容系数，ω0为基波的角频率，Z0为所述高阻抗线的特征阻抗，M为所述高阻抗线的特征阻抗和所述低阻抗线的特征阻抗的比值，θ同时为所述高阻抗线和所述低阻抗线的电长度。
  9. 如权利要求8所述的E类功率放大器的等效电感电路的器件参数获取方法，其特征在于，所述高阻抗线的特征阻抗和所述低阻抗线的特征阻抗的比值的取值范围为大于1。
  10. 如权利要求8所述的E类功率放大器的等效电感电路的器件参数获取方法，其特征在于，在使用下述非线性方程组计算所述高阻抗线的参数和所述低阻抗线的参数之前还包括：
    预设所述高阻抗线的特征阻抗。
PCT/CN2015/095532 2015-06-16 2015-11-25 一种e类功率放大器的等效电感电路及器件参数获取方法 WO2016201896A1 (zh)

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