WO2016201762A1 - IPS型On Cell触控显示面板及其制作方法 - Google Patents

IPS型On Cell触控显示面板及其制作方法 Download PDF

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Publication number
WO2016201762A1
WO2016201762A1 PCT/CN2015/084872 CN2015084872W WO2016201762A1 WO 2016201762 A1 WO2016201762 A1 WO 2016201762A1 CN 2015084872 W CN2015084872 W CN 2015084872W WO 2016201762 A1 WO2016201762 A1 WO 2016201762A1
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WIPO (PCT)
Prior art keywords
disposed
substrate
insulating layer
color film
electrode
Prior art date
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Ceased
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PCT/CN2015/084872
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English (en)
French (fr)
Inventor
徐向阳
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Application filed by Shenzhen China Star Optoelectronics Technology Co Ltd filed Critical Shenzhen China Star Optoelectronics Technology Co Ltd
Priority to US14/777,742 priority Critical patent/US20170147110A1/en
Publication of WO2016201762A1 publication Critical patent/WO2016201762A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Definitions

  • the present invention relates to the field of display technologies, and in particular, to an IPS type On Cell touch display panel and a manufacturing method thereof.
  • touch display panels have been widely accepted and used by people, such as smart phones, tablets, etc., using touch display panels.
  • the touch display panel integrates the touch panel and the liquid crystal display panel by using the embedded touch technology, and the touch panel function is embedded in the liquid crystal display panel, so that the liquid crystal display panel has the functions of displaying and sensing the touch input at the same time.
  • the liquid crystal display panel is generally composed of a color filter (CF), a thin film transistor array substrate (TFT Array Substrate), and a liquid crystal layer disposed between the two substrates.
  • the working principle is to control the rotation of the liquid crystal molecules of the liquid crystal layer by applying a driving voltage on the two glass substrates, and refract the light of the backlight module to generate a picture.
  • liquid crystal display panels on the mainstream market can be classified into the following types: Vertical Alignment (VA) type, Twisted Nematic (TN) or Super Twisted (Super Twisted). Nematic, STN) type, In-Plane Switching (IPS) type, and Fringe Field Switching (FFS) type.
  • VA Vertical Alignment
  • TN Twisted Nematic
  • IPS In-Plane Switching
  • FFS Fringe Field Switching
  • a conventional IPS type liquid crystal display panel generally includes a TFT substrate 100, a CF substrate 200, and a liquid crystal layer 300 interposed therebetween.
  • the TFT substrate 100 is provided with a lower substrate 110, a gate 121, a scan line 122, a gate insulating layer 130, a semiconductor layer 140, a source/drain 151, a data line 152, and an indium tin oxide (ITO) pixel electrode.
  • ITO indium tin oxide
  • the CF substrate 200 is provided with: an upper substrate 210, a color film photoresist 220, a black matrix 230, and a photoresist spacer 240 And the upper alignment film 250; in order to electromagnetically protect the conventional IPS type liquid crystal display panel, a whole-piece ITO transparent electrode 260 is disposed on the surface of the upper substrate substrate 210 of the CF substrate 200 away from the liquid crystal layer 3 side. .
  • Touch display panels can be divided into resistive, capacitive, optical, and acoustic waves according to different sensing technologies.
  • the mainstream touch technology is capacitive, and the capacitive type is divided into self-capacitance and mutual.
  • Capacitive type the capacitive touch display panel on the market is mainly mutual capacitance type, and the mutual capacitance has the advantage that multi-touch can be realized.
  • the touch display panel can be divided according to the structure: the touch electrode is covered on the liquid crystal cell (On Cell), the touch electrode is embedded in the liquid crystal cell (In Cell), and the external type.
  • the In cell type has the advantages of low cost, ultra-thin, and narrow bezel, and is mainly used in high-end touch products.
  • the sensitivity is poor.
  • the most widely used touch display panel on the market is still plug-in type, and the external type has the advantages of high sensitivity and fast response speed, but the disadvantage is high cost and limited product thinning.
  • the On Cell type integrates the advantages of the external type and the In cell type, which can improve the sensitivity and reduce the thickness of the panel.
  • the surface of the panel can only be plated after the liquid crystal is formed into a box.
  • the transparent electrode ITO used for the touch electrode the annealing temperature of the ITO is limited, so that the resistance is hard to be lowered, and the touch sensitivity is limited.
  • An object of the present invention is to provide an IPS type On Cell touch display panel, wherein the touch electrode has low resistance and high touch sensitivity.
  • Another object of the present invention is to provide a method for manufacturing an IPS type On Cell touch display panel, which can reduce the resistance of the touch electrode and improve the touch sensitivity.
  • the present invention provides an IPS type On Cell touch display panel, comprising an array color film substrate, an upper substrate disposed opposite to the array color film substrate, and an array of the color filter substrate and the upper substrate. a liquid crystal layer and a touch electrode disposed on a side of the upper substrate away from the liquid crystal layer;
  • the array color film substrate is provided with a TFT, a pixel electrode, a comb-shaped common electrode, and a color film photoresist, and integrates a function of a TFT array and a color filter;
  • the upper substrate includes only an upper substrate, and an upper alignment film disposed on a surface of the upper substrate adjacent to the liquid crystal layer;
  • the touch electrode is disposed on a surface of the upper substrate away from the liquid crystal layer, and the touch electrode is subjected to a high temperature annealing process.
  • the array color film substrate specifically includes a lower substrate, a gate and a scan line disposed on the lower substrate, a gate insulating layer disposed on the gate, the scan line and the lower substrate, and An island-shaped semiconductor layer disposed on the gate insulating layer above the gate, and a source/drain provided on the gate insulating layer contacting the two sides of the island-shaped semiconductor layer respectively, and disposed on the gate insulating layer a data line, an insulating protective layer disposed on the source/drain, the data line and the gate insulating layer, a color film photoresist disposed on the insulating protective layer, disposed on the color film photoresist and contacting a part of the source a drain pixel electrode, an insulating layer disposed on the pixel electrode and the color film photoresist, and a comb disposed opposite to the pixel electrode on the insulating layer a common electrode, a black matrix disposed on the insulating layer, a photoresist spacer disposed on the black matrix
  • the gate, the island-shaped semiconductor layer, and the source/drain constitute a TFT.
  • the material of the touch electrode is ITO.
  • the material of the pixel electrode and the common electrode is ITO.
  • the upper substrate and the lower substrate are both glass substrates.
  • the present invention also provides an IPS type On Cell touch display panel, comprising an array color film substrate, an upper substrate disposed opposite to the array color film substrate, and a liquid crystal sandwiched between the array color film substrate and the upper substrate a layer and a touch electrode disposed on a side of the upper substrate away from the liquid crystal layer;
  • the array color film substrate is provided with a TFT, a pixel electrode, a comb-shaped common electrode, and a color film photoresist, and integrates a function of a TFT array and a color filter;
  • the upper substrate includes only an upper substrate, and an upper alignment film disposed on a surface of the upper substrate adjacent to the liquid crystal layer;
  • the touch electrode is disposed on a surface of the upper substrate away from the liquid crystal layer, and the touch electrode is subjected to a high temperature annealing process;
  • the array color film substrate specifically includes a lower substrate, a gate and a scan line disposed on the lower substrate, a gate insulating layer disposed on the gate, the scan line, and the lower substrate; An island-shaped semiconductor layer disposed on the gate insulating layer above the gate, and a source/drain disposed on the gate insulating layer respectively contacting the two sides of the island-shaped semiconductor layer, and disposed on the gate insulating layer a data line, an insulating protective layer disposed on the source/drain, the data line and the gate insulating layer, a color film photoresist disposed on the insulating protective layer, disposed on the color film photoresist and in contact a partial source/drain pixel electrode, an insulating layer disposed on the pixel electrode and the color film photoresist, a comb-shaped common electrode disposed opposite to the pixel electrode on the insulating layer, and disposed on the insulating layer a black matrix, a photoresist spacer disposed on the black matrix,
  • the gate, the island-shaped semiconductor layer, and the source/drain constitute a TFT
  • the material of the touch electrode is ITO;
  • the material of the pixel electrode and the common electrode is ITO.
  • the invention also provides a method for manufacturing an IPS type On Cell touch display panel, comprising the following steps:
  • Step 1 providing an upper substrate, applying an alignment liquid on one surface of the upper substrate to form an upper alignment film, and completing the fabrication of the upper substrate;
  • Step 2 making a touch electric power on the other side surface of the upper substrate opposite to the alignment film Extremely, and performing high temperature annealing treatment on the touch electrode to reduce the resistance of the touch electrode;
  • Step 3 providing an array color film substrate, wherein the array color film substrate is provided with a TFT, a pixel electrode, a comb-shaped common electrode, and a color film photoresist, and integrating the functions of the TFT array and the color filter;
  • Step 4 The array color film substrate and the upper substrate are paired, and the upper alignment film faces the array color film substrate, and liquid crystal is poured into the array color film substrate and the upper substrate to form a liquid crystal layer.
  • the step 2 further includes: after performing a high temperature annealing treatment on the touch electrode, coating an organic protective film covering the touch electrode;
  • the step 4 further includes removing the organic protective film.
  • the material of the organic protective film is polyimide or photoresist, and has a thickness of 3 to 5 ⁇ m.
  • the array color film substrate specifically includes a lower substrate, a gate and a scan line disposed on the lower substrate, a gate insulating layer disposed on the gate, the scan line and the lower substrate, and An island-shaped semiconductor layer disposed on the gate insulating layer above the gate, and a source/drain provided on the gate insulating layer contacting the two sides of the island-shaped semiconductor layer respectively, and disposed on the gate insulating layer a data line, an insulating protective layer disposed on the source/drain, the data line and the gate insulating layer, a color film photoresist disposed on the insulating protective layer, disposed on the color film photoresist and contacting a part of the source a pixel electrode of the drain, an insulating layer disposed on the pixel electrode and the photoresist of the color film, a comb-shaped common electrode disposed opposite to the pixel electrode on the insulating layer, and a black matrix disposed on the insulating layer a photoresist spacer disposed on
  • the material of the touch electrode, the pixel electrode and the common electrode is ITO; and the upper substrate and the lower substrate are both glass substrates.
  • the invention provides an IPS type On Cell touch display panel, wherein the array color film substrate integrates the functions of the TFT array and the color filter, and the upper substrate only includes the base substrate and the alignment film, and the touch
  • the control electrode is disposed on a surface of the upper substrate away from the liquid crystal layer, and the touch electrode is subjected to high temperature annealing treatment, so that the resistance of the touch electrode is low and the touch sensitivity is high; and the IPS type On is provided by the present invention.
  • the method for manufacturing the cell touch display panel is: before the formation of the array color film substrate and the upper substrate pair and the liquid crystal layer, the touch electrodes are formed on the surface of the upper substrate of the upper substrate away from the liquid crystal layer, and the touch electrodes are formed
  • the high temperature annealing treatment of the control electrode can reduce the resistance of the touch electrode and improve the touch sensitivity.
  • FIG. 1 is a schematic structural view of a conventional IPS type liquid crystal display panel
  • FIG. 2 is a schematic structural view of an IPS type On Cell touch display panel according to the present invention.
  • FIG. 3 is a flow chart of a method for fabricating an IPS type On Cell touch display panel according to the present invention.
  • the present invention firstly provides an IPS type On Cell touch display panel, comprising an array color filter substrate 1, an upper substrate 3 disposed opposite to the array color film substrate 1, and a color film sandwiched between the arrays.
  • the array color filter substrate 1 integrates the functions of the TFT array and the color filter, including the lower substrate 11, the gate 121 and the scan line 122 disposed on the lower substrate 11, and is disposed on a gate electrode 121, a scan line 122 and a gate insulating layer 13 on the lower substrate 11, an island-shaped semiconductor layer 14 disposed on the gate insulating layer 13 above the gate 121, and the gate insulating layer
  • the layer 13 is respectively connected to the source/drain 151 on both sides of the island-shaped semiconductor layer 14, the data line 152 disposed on the gate insulating layer 13, and the source/drain 151, the data line 152 and the gate.
  • the pixel electrode 18 and the insulating layer 19 on the color filter photoresist 17, the comb-shaped common electrode 20 disposed on the insulating layer 19 opposite to the pixel electrode 18, and the black matrix 21 provided on the insulating layer 19 are provided.
  • a photoresist spacer 22 on the black matrix 21, and a cover of the insulating layer 19, the common electrode 20, the black matrix 21, and the photoresist spacer 22 An alignment film 23.
  • the gate electrode 121, the island-shaped semiconductor layer 14, and the source/drain 151 constitute a TFT T.
  • the upper substrate 3 includes only the upper substrate substrate 31 and the upper alignment film 33 provided on the surface of the upper substrate substrate 31 close to the liquid crystal layer 5.
  • the touch electrode 7 is disposed on a surface of the upper substrate 3 away from the liquid crystal layer 5, and the touch electrode 7 is subjected to high temperature annealing treatment, so that the resistance of the touch electrode 7 is small, and the touch sensitivity is high. .
  • the material of the touch electrode 7 is preferably ITO.
  • the material of the pixel electrode 18 and the common electrode 20 is preferably ITO.
  • the upper substrate substrate 31 and the lower substrate substrate 11 are both glass substrates.
  • the present invention further provides a method for fabricating an IPS type On Cell touch display panel, comprising the following steps:
  • Step 1 The upper substrate 31 is provided, and an alignment liquid is applied onto one surface of the upper substrate 31 to form an upper alignment film 33, thereby completing the fabrication of the upper substrate 3.
  • the upper substrate substrate 31 is a glass substrate.
  • Step 2 The touch electrode 7 is formed on the other side surface of the upper substrate substrate 31 opposite to the alignment film 33, and the touch electrode 7 is subjected to high temperature annealing treatment to reduce the resistance of the touch electrode 7.
  • the material of the touch electrode 7 is preferably ITO.
  • the step 2 further includes applying an organic protective film covering the touch electrode 7 with a thickness of 3 to 5 ⁇ m, such as polyimide, after the high-temperature annealing treatment of the touch electrode 7 .
  • an organic protective film covering the touch electrode 7 with a thickness of 3 to 5 ⁇ m such as polyimide, after the high-temperature annealing treatment of the touch electrode 7 .
  • PI a film or a photoresist (PR) film or the like to prevent the touch electrode 7 from being scratched during the pairing process of the subsequent steps.
  • Step 3 Providing an array color filter substrate 1.
  • the array color filter substrate 1 integrates the functions of the TFT array and the color filter, including the lower substrate 11, the gate 121 and the scan line 122 disposed on the lower substrate 11, and is disposed on a gate electrode 121, a scan line 122 and a gate insulating layer 13 on the lower substrate 11, an island-shaped semiconductor layer 14 disposed on the gate insulating layer 13 above the gate 121, and the gate insulating layer
  • the layer 13 is respectively connected to the source/drain 151 on both sides of the island-shaped semiconductor layer 14, the data line 152 disposed on the gate insulating layer 13, and the source/drain 151, the data line 152 and the gate.
  • the pixel electrode 18 and the insulating layer 19 on the color filter photoresist 17, the comb-shaped common electrode 20 disposed on the insulating layer 19 opposite to the pixel electrode 18, and the black matrix 21 provided on the insulating layer 19 are provided.
  • a photoresist spacer 22 on the black matrix 21, and a cover of the insulating layer 19, the common electrode 20, the black matrix 21, and the photoresist spacer 22 An alignment film 23.
  • the gate electrode 121, the island-shaped semiconductor layer 14, and the source/drain 151 constitute a TFT T.
  • the lower substrate substrate 11 is a glass substrate.
  • the material of the pixel electrode 18 and the common electrode 20 is preferably ITO.
  • the array color film substrate 1 is sequentially fabricated by using a conventional deposition process, or a deposition process and a mask etching process, and will not be described in detail herein.
  • Step 4 Aligning the array color filter substrate 1 and the upper substrate 3 so that the upper alignment film 33 faces the array color filter substrate 1, and liquid crystal is poured between the array color film substrate 1 and the upper substrate 3 to form a liquid crystal layer. 5.
  • step 4 further includes removing the organic protective film covering the touch electrode 7 in the above step 2.
  • the IPS-type On Cell touch display panel is completed. Since the touch electrode 7 is formed before the array of the color filter substrate 1 and the upper substrate 3 and the liquid crystal layer 5 is formed, and the high temperature annealing treatment is performed, the touch can be reduced. The resistance of the electrode 7 improves the touch sensitivity.
  • the IPS type On Cell touch display panel of the present invention integrates the functions of the TFT array and the color filter by the array color film substrate, the upper substrate only includes the base substrate and the alignment film, and the touch electrodes are disposed at The upper substrate is away from the surface of the liquid crystal layer, and the touch electrode is subjected to high temperature annealing treatment, so that the resistance of the touch electrode is low and the touch sensitivity is high; and the IPS type On Cell touch display panel of the present invention is fabricated.
  • the method comprises: forming a touch electrode on a surface of the upper substrate of the upper substrate away from the liquid crystal layer before the formation of the array color film substrate and the upper substrate pair and the liquid crystal layer, and performing high temperature annealing treatment on the touch electrode. It can reduce the resistance of the touch electrode and improve the touch sensitivity.

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Abstract

提供一种IPS型On Cell触控显示面板及其制作方法。IPS型On Cell触控显示面板包括相对设置的阵列彩膜基板(1)与上基板(3)、夹设于阵列彩膜基板(1)与上基板(3)之间的液晶层(5)、及设于上基板(3)远离液晶层(5)一侧的触控电极(7)；阵列彩膜基板(1)设置有TFT(T)、像素电极(18)、梳状的公共电极(20)、与彩膜光阻(17)，集成了TFT阵列与彩膜滤光的功能；上基板(3)仅包括上衬底基板(31)、及设于上衬底基板(31)靠近液晶层(5)一侧表面上的上配向膜(33)；触控电极(7)设于上衬底基板(3)远离液晶层(5)一侧的表面上，触控电极(7)经过高温退火处理，从而电阻较低、触控灵敏度较高。

Description

IPS型On Cell触控显示面板及其制作方法 技术领域
本发明涉及显示技术领域，尤其涉及一种IPS型On Cell触控显示面板及其制作方法。
背景技术
随着显示技术的飞速发展，触控显示面板已经广泛地被人们所接受及使用，如智能手机、平板电脑等均使用了触控显示面板。触控显示面板采用嵌入式触控技术将触控面板和液晶显示面板结合为一体，并将触控面板功能嵌入到液晶显示面板内，使得液晶显示面板同时具备显示和感知触控输入的功能。
液晶显示面板通常是由一彩膜基板(Color Filter，CF)、一薄膜晶体管阵列基板(Thin Film Transistor Array Substrate，TFT Array Substrate)以及一配置于两基板间的液晶层(Liquid Crystal Layer)所构成，其工作原理是通过在两片玻璃基板上施加驱动电压来控制液晶层的液晶分子的旋转，将背光模组的光线折射出来产生画面。按照液晶的取向方式不同，目前主流市场上的液晶显示面板可以分为以下几种类型：垂直配向(Vertical Alignment，VA)型、扭曲向列(Twisted Nematic，TN)或超扭曲向列(Super Twisted Nematic，STN)型、平面转换(In-Plane Switching，IPS)型、及边缘场开关(Fringe Field Switching，FFS)型。
其中IPS型液晶显示面板中的液晶分子相对于基板面平行取向，通过对液晶层施加横向电场来控制液晶分子的旋转。如图1所示，传统的IPS型液晶显示面板通常包括相对设置的TFT基板100、CF基板200及夹设于二者之间的液晶层300。所述TFT基板100设置有：下衬底基板110、栅极121、扫描线122、栅极绝缘层130、半导体层140、源/漏极151、数据线152、氧化铟锡(ITO)像素电极160、绝缘保护层170、梳状的ITO公共电极180、以及下配向膜190；所述CF基板200设置有：上衬底基板210、彩膜光阻220、黑色矩阵230、光阻间隔物240、及上配向膜250；为了对该传统IPS型液晶显示面板进行电磁保护，在CF基板200的上衬底基板210远离液晶层3一侧的表面上设有一层整片式的ITO透明电极260。
触控显示面板依感应技术不同可分为电阻式、电容式、光学式、音波式四种，目前主流的触控技术为电容式，其中电容式又分为自电容式和互 电容式，目前市场上的电容式触控显示面板为主要为互电容式，互电容的优点在于可实现多点触控。触控显示面板根据结构不同可划分为：触控电极覆盖于液晶盒上式(On Cell)，触控电极内嵌在液晶盒内式(In Cell)、以及外挂式。其中，In cell式具有成本低、超薄、和窄边框的优点，主要应用在高端触控产品中，但由于In cell式触控技术工艺难度较大，信号干扰等因素，其灵敏度较差。目前市场上应用最多的触控显示面板仍为外挂式，外挂式的优点在于灵敏度高，响应速度快，但缺点是成本高，产品超薄化受限制。On Cell式集成了外挂式和In cell式的优点，既能提高灵敏度又能降低面板厚度，但由于在On Cell式触控显示面板的制作过程中，只能在液晶成盒之后在面板表面镀用于制作触控电极的透明电极ITO，ITO退火温度受限制，因此电阻很难降低，导致触控灵敏度提高受限。
发明内容
本发明的目的在于提供一种IPS型On Cell触控显示面板，其触控电极的电阻较低、触控灵敏度较高。
本发明的目的还在于提供一种IPS型On Cell触控显示面板的制作方法，能够降低触控电极的电阻，提高触控灵敏度。
为实现上述目的，本发明提供一种IPS型On Cell触控显示面板，包括阵列彩膜基板、与所述阵列彩膜基板相对设置的上基板、夹设于所述阵列彩膜基板与上基板之间的液晶层、及设于所述上基板远离液晶层一侧的触控电极；
所述阵列彩膜基板设置有TFT、像素电极、梳状公共电极、与彩膜光阻，集成了TFT阵列与彩膜滤光的功能；
所述上基板仅包括上衬底基板、及设于所述上衬底基板靠近液晶层一侧表面上的上配向膜；
所述触控电极设于该上衬底基板远离液晶层一侧的表面上，所述触控电极经过高温退火处理。
所述阵列彩膜基板具体包括下衬底基板、设于所述下衬底基板上的栅极与扫描线、设于栅极、扫描线与下衬底基板上的栅极绝缘层、于所述栅极上方设于栅极绝缘层上的岛状半导体层、设于所述栅极绝缘层上分别接触岛状半导体层两侧的源\漏极、设于所述栅极绝缘层上的数据线、设于所述源\漏极、数据线与栅极绝缘层上的绝缘保护层、设于绝缘保护层上的彩膜光阻、设于所述彩膜光阻上并接触部分源\漏极的像素电极、设于所述像素电极与彩膜光阻上的绝缘层、于所述绝缘层上与像素电极相对设置的梳 状公共电极、设于所述绝缘层上的黑色矩阵、设于所述黑色矩阵上的光阻间隔物、以及覆盖所述绝缘层、公共电极、黑色矩阵、与光阻间隔物的下配向膜；
所述栅极、岛状半导体层、及源\漏极构成TFT。
所述触控电极的材料为ITO。
所述像素电极与公共电极的材料为ITO。
所述上衬底基板与下衬底基板均为玻璃基板。
本发明还提供一种IPS型On Cell触控显示面板，包括阵列彩膜基板、与所述阵列彩膜基板相对设置的上基板、夹设于所述阵列彩膜基板与上基板之间的液晶层、及设于所述上基板远离液晶层一侧的触控电极；
所述阵列彩膜基板设置有TFT、像素电极、梳状公共电极、与彩膜光阻，集成了TFT阵列与彩膜滤光的功能；
所述上基板仅包括上衬底基板、及设于所述上衬底基板靠近液晶层一侧表面上的上配向膜；
所述触控电极设于该上衬底基板远离液晶层一侧的表面上，所述触控电极经过高温退火处理；
其中，所述阵列彩膜基板具体包括下衬底基板、设于所述下衬底基板上的栅极与扫描线、设于栅极、扫描线与下衬底基板上的栅极绝缘层、于所述栅极上方设于栅极绝缘层上的岛状半导体层、设于所述栅极绝缘层上分别接触岛状半导体层两侧的源\漏极、设于所述栅极绝缘层上的数据线、设于所述源\漏极、数据线与栅极绝缘层上的绝缘保护层、设于绝缘保护层上的彩膜光阻、设于所述彩膜光阻上并接触部分源\漏极的像素电极、设于所述像素电极与彩膜光阻上的绝缘层、于所述绝缘层上与像素电极相对设置的梳状公共电极、设于所述绝缘层上的黑色矩阵、设于所述黑色矩阵上的光阻间隔物、以及覆盖所述绝缘层、公共电极、黑色矩阵、与光阻间隔物的下配向膜；
所述栅极、岛状半导体层、及源\漏极构成TFT；
其中，所述触控电极的材料为ITO；
其中，所述像素电极与公共电极的材料为ITO。
本发明还提供一种IPS型On Cell触控显示面板的制作方法，包括如下步骤：
步骤1、提供上衬底基板，在所述上衬底基板的一侧表面上涂布配向液，形成上配向膜，完成上基板的制作；
步骤2、在所述上衬底基板与配向膜相对的另一侧表面上制作触控电 极，并对所述触控电极进行高温退火处理，以降低触控电极的电阻；
步骤3、提供阵列彩膜基板，所述阵列彩膜基板设置有TFT、像素电极、梳状的公共电极、与彩膜光阻，集成了TFT阵列与彩膜滤光的功能；
步骤4、将阵列彩膜基板与上基板对组，使所述上配向膜朝向阵列彩膜基板，向阵列彩膜基板与上基板之间灌入液晶，形成液晶层。
所述步骤2还包括在对所述触控电极进行高温退火处理后，涂布一层覆盖所述触控电极的有机保护膜；
所述步骤4还包括去除所述有机保护膜。
所述有机保护膜的材料为聚酰亚胺或光刻胶，厚度为3～5μm。
所述阵列彩膜基板具体包括下衬底基板、设于所述下衬底基板上的栅极与扫描线、设于栅极、扫描线与下衬底基板上的栅极绝缘层、于所述栅极上方设于栅极绝缘层上的岛状半导体层、设于所述栅极绝缘层上分别接触岛状半导体层两侧的源\漏极、设于所述栅极绝缘层上的数据线、设于所述源\漏极、数据线与栅极绝缘层上的绝缘保护层、设于绝缘保护层上的彩膜光阻、设于所述彩膜光阻上并接触部分源\漏极的像素电极、设于所述像素电极与彩膜光阻上的绝缘层、于所述绝缘层上与像素电极相对设置的梳状公共电极、设于所述绝缘层上的黑色矩阵、设于所述黑色矩阵上的光阻间隔物、以及覆盖所述绝缘层、公共电极、黑色矩阵、与光阻间隔物的下配向膜；所述栅极、岛状半导体层、及源\漏极构成TFT。
所述触控电极、像素电极与公共电极的材料为ITO；所述上衬底基板与下衬底基板均为玻璃基板。
本发明的有益效果：本发明提供的一种IPS型On Cell触控显示面板，其阵列彩膜基板集成了TFT阵列与彩膜滤光的功能，上基板仅包括衬底基板与配向膜，触控电极设置在上衬底基板远离液晶层一侧的表面上，且触控电极经过高温退火处理，使得触控电极的电阻较低、触控灵敏度较高；本发明提供的一种IPS型On Cell触控显示面板的制作方法，在阵列彩膜基板与上基板对组、液晶层形成之前，在上基板的上衬底基板远离液晶层一侧的表面上制作出触控电极，并对触控电极进行高温退火处理，能够降低触控电极的电阻，提高触控灵敏度。
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图说明
下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果显而易见。
附图中，
图1为传统的IPS型液晶显示面板的结构示意图；
图2为本发明的IPS型On Cell触控显示面板的结构示意图；
图3为本发明的IPS型On Cell触控显示面板的制作方法的流程图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图2，本发明首先提供一种IPS型On Cell触控显示面板，包括阵列彩膜基板1、与所述阵列彩膜基板1相对设置的上基板3、夹设于所述阵列彩膜基板1与上基板3之间的液晶层5、及设于所述上基板3远离液晶层5一侧的触控电极7。
具体地，所述阵列彩膜基板1集成了TFT阵列与彩膜滤光的功能，包括下衬底基板11、设于所述下衬底基板11上的栅极121与扫描线122、设于栅极121、扫描线122与下衬底基板11上的栅极绝缘层13、于所述栅极121上方设于栅极绝缘层13上的岛状半导体层14、设于所述栅极绝缘层13上分别接触岛状半导体层14两侧的源\漏极151、设于所述栅极绝缘层13上的数据线152、设于所述源\漏极151、数据线152与栅极绝缘层13上的绝缘保护层16、设于绝缘保护层16上的彩膜光阻17、设于所述彩膜光阻17上并接触部分源\漏极151的像素电极18、设于所述像素电极18与彩膜光阻17上的绝缘层19、于所述绝缘层19上与像素电极18相对设置的梳状公共电极20、设于所述绝缘层19上的黑色矩阵21、设于所述黑色矩阵21上的光阻间隔物22、以及覆盖所述绝缘层19、公共电极20、黑色矩阵21、与光阻间隔物22的下配向膜23。所述栅极121、岛状半导体层14、及源\漏极151构成TFT T。
所述上基板3仅包括上衬底基板31、及设于所述上衬底基板31靠近液晶层5一侧表面上的上配向膜33。
所述触控电极7设于该上衬底基板3远离液晶层5一侧的表面上，所述触控电极7经过高温退火处理，从而触控电极7的电阻较小，触控灵敏度较高。
进一步地，所述触控电极7的材料优选为ITO。
所述像素电极18与公共电极20的材料优选为ITO。
所述上衬底基板31与下衬底基板11均为玻璃基板。
请参阅图3，结合图2，本发明还提供一种IPS型On Cell触控显示面板的制作方法，包括如下步骤：
步骤1、提供上衬底基板31，在所述上衬底基板31的一侧表面上涂布配向液，形成上配向膜33，完成上基板3的制作。
具体地，所述上衬底基板31为玻璃基板。
步骤2、在所述上衬底基板31与配向膜33相对的另一侧表面上制作触控电极7，并对所述触控电极7进行高温退火处理，以降低触控电极7的电阻。
具体地，所述触控电极7的材料优选为ITO。
进一步地，该步骤2还包括在对所述触控电极7进行高温退火处理后，涂布一层厚度为3～5μm的覆盖所述触控电极7的有机保护膜，如聚酰亚胺(PI)膜或光刻胶(PR)膜等，以防止在后续步骤的对组过程中刮伤触控电极7。
步骤3、提供阵列彩膜基板1。
具体地，所述阵列彩膜基板1集成了TFT阵列与彩膜滤光的功能，包括下衬底基板11、设于所述下衬底基板11上的栅极121与扫描线122、设于栅极121、扫描线122与下衬底基板11上的栅极绝缘层13、于所述栅极121上方设于栅极绝缘层13上的岛状半导体层14、设于所述栅极绝缘层13上分别接触岛状半导体层14两侧的源\漏极151、设于所述栅极绝缘层13上的数据线152、设于所述源\漏极151、数据线152与栅极绝缘层13上的绝缘保护层16、设于绝缘保护层16上的彩膜光阻17、设于所述彩膜光阻17上并接触部分源\漏极151的像素电极18、设于所述像素电极18与彩膜光阻17上的绝缘层19、于所述绝缘层19上与像素电极18相对设置的梳状公共电极20、设于所述绝缘层19上的黑色矩阵21、设于所述黑色矩阵21上的光阻间隔物22、以及覆盖所述绝缘层19、公共电极20、黑色矩阵21、与光阻间隔物22的下配向膜23。所述栅极121、岛状半导体层14、及源\漏极151构成TFT T。
所述下衬底基板11为玻璃基板。
所述像素电极18与公共电极20的材料优选为ITO。
上述阵列彩膜基板1采用现有的沉积工艺、或沉积工艺与掩膜刻蚀工艺依次制作各结构层，此处不再展开详述。
步骤4、将阵列彩膜基板1与上基板3对组，使所述上配向膜33朝向阵列彩膜基板1，向阵列彩膜基板1与上基板3之间灌入液晶，形成液晶层 5。
进一步地，该步骤4还包括去除上述步骤2中覆盖所述触控电极7的有机保护膜。
至此完成IPS型On Cell触控显示面板的制作，由于触控电极7在阵列彩膜基板1与上基板3对组、液晶层5形成之前制作出来，并经过了高温退火处理，能够降低触控电极7的电阻，提高触控灵敏度。
综上所述，本发明的IPS型On Cell触控显示面板，其阵列彩膜基板集成了TFT阵列与彩膜滤光的功能，上基板仅包括衬底基板与配向膜，触控电极设置在上衬底基板远离液晶层一侧的表面上，且触控电极经过高温退火处理，使得触控电极的电阻较低、触控灵敏度较高；本发明的IPS型On Cell触控显示面板的制作方法，在阵列彩膜基板与上基板对组、液晶层形成之前，在上基板的上衬底基板远离液晶层一侧的表面上制作出触控电极，并对触控电极进行高温退火处理，能够降低触控电极的电阻，提高触控灵敏度。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (12)

  1. 一种IPS型On Cell触控显示面板，包括阵列彩膜基板、与所述阵列彩膜基板相对设置的上基板、夹设于所述阵列彩膜基板与上基板之间的液晶层、及设于所述上基板远离液晶层一侧的触控电极；
    所述阵列彩膜基板设置有TFT、像素电极、梳状公共电极、与彩膜光阻，集成了TFT阵列与彩膜滤光的功能；
    所述上基板仅包括上衬底基板、及设于所述上衬底基板靠近液晶层一侧表面上的上配向膜；
    所述触控电极设于该上衬底基板远离液晶层一侧的表面上，所述触控电极经过高温退火处理。
  2. 如权利要求1所述的IPS型On Cell触控显示面板，其中，所述阵列彩膜基板具体包括下衬底基板、设于所述下衬底基板上的栅极与扫描线、设于栅极、扫描线与下衬底基板上的栅极绝缘层、于所述栅极上方设于栅极绝缘层上的岛状半导体层、设于所述栅极绝缘层上分别接触岛状半导体层两侧的源\漏极、设于所述栅极绝缘层上的数据线、设于所述源\漏极、数据线与栅极绝缘层上的绝缘保护层、设于绝缘保护层上的彩膜光阻、设于所述彩膜光阻上并接触部分源\漏极的像素电极、设于所述像素电极与彩膜光阻上的绝缘层、于所述绝缘层上与像素电极相对设置的梳状公共电极、设于所述绝缘层上的黑色矩阵、设于所述黑色矩阵上的光阻间隔物、以及覆盖所述绝缘层、公共电极、黑色矩阵、与光阻间隔物的下配向膜；
    所述栅极、岛状半导体层、及源\漏极构成TFT。
  3. 如权利要求1所述的IPS型On Cell触控显示面板，其中，所述触控电极的材料为ITO。
  4. 如权利要求1所述的IPS型On Cell触控显示面板，其中，所述像素电极与公共电极的材料为ITO。
  5. 如权利要求2所述的IPS型On Cell触控显示面板，其中，所述上衬底基板与下衬底基板均为玻璃基板。
  6. 一种IPS型On Cell触控显示面板，包括阵列彩膜基板、与所述阵列彩膜基板相对设置的上基板、夹设于所述阵列彩膜基板与上基板之间的液晶层、及设于所述上基板远离液晶层一侧的触控电极；
    所述阵列彩膜基板设置有TFT、像素电极、梳状公共电极、与彩膜光阻，集成了TFT阵列与彩膜滤光的功能；
    所述上基板仅包括上衬底基板、及设于所述上衬底基板靠近液晶层一侧表面上的上配向膜；
    所述触控电极设于该上衬底基板远离液晶层一侧的表面上，所述触控电极经过高温退火处理；
    其中，所述阵列彩膜基板具体包括下衬底基板、设于所述下衬底基板上的栅极与扫描线、设于栅极、扫描线与下衬底基板上的栅极绝缘层、于所述栅极上方设于栅极绝缘层上的岛状半导体层、设于所述栅极绝缘层上分别接触岛状半导体层两侧的源\漏极、设于所述栅极绝缘层上的数据线、设于所述源\漏极、数据线与栅极绝缘层上的绝缘保护层、设于绝缘保护层上的彩膜光阻、设于所述彩膜光阻上并接触部分源\漏极的像素电极、设于所述像素电极与彩膜光阻上的绝缘层、于所述绝缘层上与像素电极相对设置的梳状公共电极、设于所述绝缘层上的黑色矩阵、设于所述黑色矩阵上的光阻间隔物、以及覆盖所述绝缘层、公共电极、黑色矩阵、与光阻间隔物的下配向膜；
    所述栅极、岛状半导体层、及源\漏极构成TFT；
    其中，所述触控电极的材料为ITO；
    其中，所述像素电极与公共电极的材料为ITO。
  7. 如权利要求6所述的IPS型On Cell触控显示面板，其中，所述上衬底基板与下衬底基板均为玻璃基板。
  8. 一种IPS型On Cell触控显示面板的制作方法，包括如下步骤：
    步骤1、提供上衬底基板，在所述上衬底基板的一侧表面上涂布配向液，形成上配向膜，完成上基板的制作；
    步骤2、在所述上衬底基板与配向膜相对的另一侧表面上制作触控电极，并对所述触控电极进行高温退火处理，以降低触控电极的电阻；
    步骤3、提供阵列彩膜基板，所述阵列彩膜基板设置有TFT、像素电极、梳状公共电极、与彩膜光阻，集成了TFT阵列与彩膜滤光的功能；
    步骤4、将阵列彩膜基板与上基板对组，使所述上配向膜朝向阵列彩膜基板，向阵列彩膜基板与上基板之间灌入液晶，形成液晶层。
  9. 如权利要求8所述的IPS型On Cell触控显示面板的制作方法，其中，所述步骤2还包括在对所述触控电极进行高温退火处理后，涂布一层覆盖所述触控电极的有机保护膜；
    所述步骤4还包括去除所述有机保护膜。
  10. 如权利要求9所述的IPS型On Cell触控显示面板的制作方法，其中，所述有机保护膜的材料为聚酰亚胺或光刻胶，厚度为3～5μm。
  11. 如权利要求8所述的IPS型On Cell触控显示面板的制作方法，其中，所述阵列彩膜基板具体包括下衬底基板、设于所述下衬底基板上的栅极与扫描线、设于栅极、扫描线与下衬底基板上的栅极绝缘层、于所述栅极上方设于栅极绝缘层上的岛状半导体层、设于所述栅极绝缘层上分别接触岛状半导体层两侧的源\漏极、设于所述栅极绝缘层上的数据线、设于所述源\漏极、数据线与栅极绝缘层上的绝缘保护层、设于绝缘保护层上的彩膜光阻、设于所述彩膜光阻上并接触部分源\漏极的像素电极、设于所述像素电极与彩膜光阻上的绝缘层、于所述绝缘层上与像素电极相对设置的梳状公共电极、设于所述绝缘层上的黑色矩阵、设于所述黑色矩阵上的光阻间隔物、以及覆盖所述绝缘层、公共电极、黑色矩阵、与光阻间隔物的下配向膜；
    所述栅极、岛状半导体层、及源\漏极构成TFT。
  12. 如权利要求11所述的IPS型On Cell触控显示面板的制作方法，其中，所述触控电极、像素电极与公共电极的材料为ITO；所述上衬底基板与下衬底基板均为玻璃基板。
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CN106066731A (zh) * 2016-05-27 2016-11-02 京东方科技集团股份有限公司 一种触控显示面板及其制作方法、触控显示装置
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CN106773351A (zh) * 2016-12-29 2017-05-31 惠科股份有限公司 一种显示面板和显示装置
CN107315284A (zh) * 2017-07-19 2017-11-03 武汉华星光电技术有限公司 液晶显示面板及其制作方法
KR102426595B1 (ko) 2017-10-26 2022-07-28 삼성디스플레이 주식회사 액정 표시 장치
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