WO2016197530A1 - 显示面板及其制造方法、显示装置 - Google Patents

显示面板及其制造方法、显示装置 Download PDF

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Publication number
WO2016197530A1
WO2016197530A1 PCT/CN2015/093902 CN2015093902W WO2016197530A1 WO 2016197530 A1 WO2016197530 A1 WO 2016197530A1 CN 2015093902 W CN2015093902 W CN 2015093902W WO 2016197530 A1 WO2016197530 A1 WO 2016197530A1
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WIPO (PCT)
Prior art keywords
phase transfer
display panel
transfer layer
layer
substrate
Prior art date
Application number
PCT/CN2015/093902
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English (en)
French (fr)
Inventor
陈小川
王世君
王磊
姜文博
薛艳娜
李月
包智颖
肖文俊
吕振华
张勇
Original Assignee
京东方科技集团股份有限公司
北京京东方光电科技有限公司
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Application filed by 京东方科技集团股份有限公司, 北京京东方光电科技有限公司 filed Critical 京东方科技集团股份有限公司
Priority to EP15890170.2A priority Critical patent/EP3309607B1/en
Priority to US15/124,960 priority patent/US9897856B2/en
Publication of WO2016197530A1 publication Critical patent/WO2016197530A1/zh

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/13363—Birefringent elements, e.g. for optical compensation
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G—PHYSICS
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    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133512—Light shielding layers, e.g. black matrix
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1347—Arrangement of liquid crystal layers or cells in which the final condition of one light beam is achieved by the addition of the effects of two or more layers or cells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133388—Constructional arrangements; Manufacturing methods with constructional differences between the display region and the peripheral region
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/13356—Structural association of cells with optical devices, e.g. polarisers or reflectors characterised by the placement of the optical elements
    • G02F1/133565—Structural association of cells with optical devices, e.g. polarisers or reflectors characterised by the placement of the optical elements inside the LC elements, i.e. between the cell substrates
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
    • G02F2201/121—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode common or background
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
    • G02F2201/123—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode pixel
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2413/00—Indexing scheme related to G02F1/13363, i.e. to birefringent elements, e.g. for optical compensation, characterised by the number, position, orientation or value of the compensation plates
    • G02F2413/01—Number of plates being 1

Definitions

  • At least one embodiment of the present invention is directed to a display panel, a method of fabricating the same, and a display device.
  • LCD liquid crystal display
  • the LCD includes a display panel with a plurality of Thin Film Transistors (TFTs), a source driver IC with a data line for driving the TFT source, and a driving TFT gate.
  • TFTs Thin Film Transistors
  • source driver IC with a data line for driving the TFT source
  • driving TFT gate a driving TFT gate.
  • Gate Driver IC gate driver integrated circuit with a gate line and a backlight module
  • a TFT on the display panel corresponds to a sub-pixel
  • each TFT is connected to a pixel electrode
  • the pixel electrode is common to The electrode forms an electric field and controls charging and discharging of sub-pixels corresponding to the TFT.
  • At least one embodiment of the present invention provides a display panel, a method for fabricating the same, and a display device for solving the problem of color shift when a TFT-LCD displays a solid color picture due to cross-color viewing.
  • At least one embodiment of the present invention provides a display panel including an array substrate, a counter substrate, and a liquid crystal layer between the array substrate and the counter substrate, wherein the display panel includes a display area and a non-display In the region, a non-display region corresponding to the array substrate is provided with a phase transfer layer for phase shifting light passing through the phase transfer layer.
  • a black matrix is disposed in the non-display area, and the black matrix of the phase transfer layer in the orthographic projection of the array substrate and the non-display area is on the array substrate.
  • the orthographic projections coincide.
  • the phase transfer layer is located in the array
  • the column substrate is located above all the layers on one side of the liquid crystal layer.
  • the pair of cassette substrates are provided with a common electrode
  • the array substrate is provided with a pixel electrode
  • the phase transfer layer is located above the layer where the pixel electrode is located.
  • the phase transfer layer is insulated from the pixel electrode, and the phase transfer layer applies a bias voltage for driving liquid crystal deflection of the phase transfer layer coverage area.
  • the array substrate is provided with a first transparent electrode and a second transparent electrode, the first transparent electrode is away from the liquid crystal layer, and the second transparent electrode is adjacent to the The liquid crystal layer is located above the second transparent electrode.
  • the first transparent electrode is a pixel electrode
  • the second transparent electrode is a common electrode
  • the first transparent electrode is a common electrode
  • the second transparent The electrode is a pixel electrode
  • the embodiment of the invention further provides a display device comprising any of the above display panels.
  • the embodiment of the invention further provides a method for manufacturing a display panel, comprising the following steps:
  • phase transfer layer Forming an array substrate, and forming a phase transfer layer on the array substrate, the phase transfer layer being located in a non-display area of the display panel, wherein the phase transfer layer is for phase shifting light passing through the phase transfer layer;
  • a counter substrate is formed, and the array substrate on which the phase transfer layer is formed and the counter substrate are paired to form a display panel.
  • the forming an array substrate includes: providing a first substrate; forming a thin film transistor over the first substrate; forming the film a pixel electrode layer above the transistor; a phase transfer layer formed over the pixel electrode layer; the forming the counter substrate includes: providing a second substrate substrate: a common electrode layer formed over the second substrate.
  • the forming an array substrate includes: providing a first substrate; forming a thin film transistor over the first substrate; forming the film a first transparent electrode layer above the transistor; a second transparent electrode layer formed over the first transparent electrode layer; and a phase transfer layer formed over the second transparent electrode layer.
  • the first transparent The electrode is a pixel electrode
  • the second transparent electrode is a common electrode
  • the first transparent electrode is a common electrode
  • the second transparent electrode is a pixel electrode
  • the material of the phase transfer layer is MoSiON.
  • 1a is a schematic plan view of a display panel in a TFT-LCD
  • FIG. 1b is a schematic diagram of a light leakage cross section of a TFT-LCD display panel
  • 1c is a schematic plan view of the array substrate in the region C shown by the broken line frame of the TFT-LCD shown in FIG. 1a;
  • FIG. 2a is a schematic cross-sectional view of a display panel according to an embodiment of the present invention.
  • FIG. 2b is a schematic cross-sectional view of another display panel according to an embodiment of the present invention.
  • FIG. 2c is a schematic cross-sectional view of another display panel according to an embodiment of the present invention (B-B' cross-sectional view in FIG. 1c);
  • Figure 3 is a schematic diagram of the working principle of the phase transfer layer
  • FIG. 4 is a schematic cross-sectional view of a display panel according to an embodiment of the present invention.
  • FIG. 1a is a schematic top view of a display panel in a TFT-LCD
  • the display panel includes a display area 001 and a non-display area 002;
  • the display panel includes an array substrate 41, a counter substrate 42 and an array substrate and a counter substrate
  • the liquid crystal layer 50 shown in FIG. 1b
  • the display area 002 corresponds.
  • the display area 001 is configured to emit light or transmitted light
  • the non-display area 002 is configured to separate the display areas.
  • the following embodiments can be identical thereto.
  • the array substrate includes a plurality of gate lines 71 and a plurality of data lines 72.
  • the plurality of gate lines 71 and the plurality of data lines 72 are intersected and insulated, for example, the gate lines 71 extend in the lateral direction, and the data lines 72 extends vertically.
  • the plurality of gate lines 71 and the plurality of data lines 72 cross define a plurality of sub-pixels 10.
  • one sub-pixel 10 further includes a switching element and a pixel electrode 24 connected to the switching element.
  • the switching element is, for example, a thin film transistor 36.
  • the sub-pixel 10 may be defined by a plurality of gate lines 71 and a plurality of data lines 72, but is not limited thereto.
  • the sub-pixel 10 includes, for example, a gate line, a data line, a pixel electrode, and a switching element.
  • the sub-pixel 10 is the smallest unit of the array substrate or the pair of substrates for display.
  • the display area 001 corresponds to an area of the plurality of sub-pixels that emits light or transmits light.
  • a non-display area 002 is disposed between the display areas 001 of adjacent sub-pixels.
  • the display area 001 and the non-display area 002 described in the embodiments of the present invention correspond to the microstructure of the display panel. In practical applications, it is difficult for the human eye to distinguish the micro display area 001 from the non-display area. 002, the display area 001 and the non-display area 002 collectively constitute an image display area (screen display area) of the display panel.
  • FIG. 1b it is a schematic diagram of a TFT-LCD cross-section.
  • One pixel unit includes, for example, a plurality of sub-pixels for displaying different colors to achieve color display.
  • a pixel unit in an array substrate of a TFT-LCD may include a red sub-pixel, a green sub-pixel, and a blue sub-pixel, identified by R, G, and B, respectively.
  • the TFT-LCD In the process of performing screen display, when the light emitted by the backlight falls vertically on the array substrate of the TFT-LCD, the light can be directly reflected, but when the light emitted by the backlight is obliquely projected, due to incidence The problem of angle, the light will be reflected or transmitted after being put on the array substrate.
  • the TFT-LCD has a cross-color problem in the side view, and the green sub-pixel is leaked as shown in FIG. 1b (for example, G in FIG. 1b).
  • the pixel leaks light, so there is a color shift when the TFT-LCD displays a solid color picture.
  • the pixel unit may include a red sub-pixel, a green sub-pixel, and a blue sub-pixel, but is not limited thereto.
  • the arrangement of the sub-pixels is not limited to the matrix arrangement in which the rows and columns of each row shown in FIG. 1a are aligned with each other.
  • the sub-pixels may also be a "pin" arrangement of the widths or heights of the rows and columns that are staggered from each other, for example, half of the sub-pixels.
  • Fig. 1c is a top plan view of the array substrate in the area C shown by the broken line frame of the TFT-LCD shown in Fig. 1a, and the plate-shaped pixel electrode 24 is electrically connected to the drain electrode 25 through the hole 26'.
  • the slit-shaped common electrode 29 is insulated from the pixel electrode 24 and disposed above the layer where the pixel electrode 24 is located.
  • the gate line 71 may be formed in the same layer as the gate electrode 21, and the source electrode 25' may be formed in the same layer as the data line 72.
  • an active layer 23 is also shown in Figure 1c.
  • At least one embodiment of the present invention provides a display panel including an array substrate, a counter substrate, and a liquid crystal layer between the array substrate and the counter substrate.
  • the display panel includes a display area and a non-display area.
  • a corresponding non-display area is provided with a phase transfer layer for phase shifting light passing through the phase transfer layer.
  • a phase transfer layer is provided in the non-display area of the display panel, and the phase transfer layer is used to phase shift the input light beam.
  • the display panel of the phase transfer layer is disposed in the non-display area, and when the light is reflected or transmitted after being input to the lower substrate in the display panel, the phase transfer layer can phase shift the reflected or transmitted light, so that after phase shifting
  • the energy of the beam (light intensity) and the energy (light intensity) of the beam that is not phase-shifted can cancel each other out, so that there is no problem of light leakage, which solves the problem of color shift when displaying a solid color picture.
  • a black matrix is disposed in a non-display area, and the phase transfer layer overlaps the orthographic projection of the black matrix in the front projection and non-display areas of the array substrate on the array substrate.
  • the phase transfer layer is located above all the layers of the array substrate on the side close to the liquid crystal layer.
  • a set substrate of the display panel is provided with a common electrode, the array substrate is provided with a pixel electrode, and a phase transfer layer is located above the layer where the pixel electrode is located.
  • the phase transfer layer is insulated from the pixel electrode, and the phase transfer layer applies a bias voltage for driving the liquid crystal deflection of the phase transfer layer coverage region (corresponding region).
  • the array substrate is provided with a first transparent electrode and a second transparent electrode, the first transparent electrode is away from the liquid crystal layer, the second transparent electrode is adjacent to the liquid crystal layer, and the phase transfer layer is located at the second layer. Above the transparent electrode.
  • the first transparent electrode is a pixel electrode.
  • the second transparent electrode is a common electrode; or the first transparent electrode is a common electrode, and the second transparent electrode is a pixel electrode.
  • the display panel includes an array substrate 41, a counter substrate 42 and a liquid crystal layer 50 between the array substrate 41 and the counter substrate 42.
  • the display panel includes a display area 001 and a non-display area 002 (see also FIG. 1a).
  • a phase transfer layer 28 is disposed on the non-display area corresponding to the array substrate 41, and the phase transfer layer 28 is used for phase shifting the light passing through the phase transfer layer. .
  • the display panel performs image display, as shown in FIG. 2a, it is assumed that the light beam 1 and the light beam 2 are irradiated onto the non-display area 002 in the display panel, and when the light beam 1 is irradiated, it is put on the set phase transfer layer, and the light beam 1 is The phase changes, and when the light beam 2 is irradiated, there is no phase transfer layer, so the phase of the light beam 2 does not change, so that the energy (light intensity) of the light beam 1 whose phase changes, and the energy of the light beam 2 where the phase change does not occur (Light intensity), can cancel each other, the area represented by reference numeral 60 in Fig.
  • the display panel 2a is the energy canceling area, so that the display panel does not have the problem of light leakage, thereby solving the problem of color shift when displaying a solid color picture. Even if there is an error in the operation of the cartridge, the light leakage problem can be solved by the increased phase transfer layer.
  • the phase transfer layer 28 disposed in the non-display area 002 of the display panel can cause the light beam input to the phase transfer layer 28 to be deflected by 180°, so that the phase change beam can be ensured.
  • the energy of the beam and the energy of the beam that has not undergone phase change are completely canceled, and no light leakage occurs, which further enhances the display effect of the display panel.
  • a color film layer 35 is disposed on the second substrate 20' of the cassette substrate 42, and the color film layer is used for filtering to realize color image display.
  • FIG. 3 a comparison diagram before and after the phase shift is performed.
  • the phase transfer layer is not provided, as shown in the left side of FIG. 3, the light beam is directly transmitted, and no phase is deflected.
  • the phase transfer layer is provided, as shown on the right side of FIG. 3, the beam is phase-shifted when it is put into the phase transfer layer 28, for example, by 180°.
  • the phase-shifted beam is identified as 501, thus The phase transfer layer is arranged to achieve energy cancellation of the energy of the beam 501 passing through the phase transfer layer 28 and the energy of the beam 502 not passing through the phase transfer layer.
  • phase transfer layer changes the phase transition of light can be referred to as shown in FIG. 3, for example, According to the following formula:
  • phase for example, ⁇
  • ⁇ is the wavelength of light
  • n is the refractive index
  • d is the thickness of the phase transfer layer.
  • the non-display area 002 is provided with a black matrix 30, and the orthographic projection of the black matrix 30 on the array substrate 41 covers the orthographic projection of the phase transfer layer 28 on the array substrate 41.
  • the black matrix is disposed on the counter substrate 42, for example, a black matrix is disposed on the second substrate 20' of the counter substrate 42.
  • the array substrate 41 includes a first substrate substrate 20, an orthographic projection of the phase transfer layer 28 at the first substrate substrate 20 and an orthographic projection of the black matrix 30 at the first substrate substrate 20.
  • the areas overlap.
  • the orthographic projection of the phase transfer layer 28 on the first substrate 20 coincides with the orthographic projection of the black matrix 30 on the first substrate 20, and the orthographic projection corresponding to the phase transfer layer covers the black matrix on the first substrate 20 Orthographic projection on.
  • the sub-pixels can be prevented from leaking light, and the shading can be prevented from being formed, thereby forming a shadow, thereby solving the problem of color shift when displaying a solid color picture. .
  • the phase transfer layer 28 is located above all of the layers on the array substrate 41 near the side of the liquid crystal layer 50. In this way, when the image is displayed on the display panel, when the light beam is projected onto the second substrate, the sub-pixels can be prevented from leaking light, and the shading can be prevented from being formed, thereby forming a shadow, thereby solving the problem of color shift when displaying a solid color screen.
  • the above display panel can be applied to both a Twisted Nematic (TN) mode display panel and an Advanced Super Bimension Switch (ADS) mode.
  • TN Twisted Nematic
  • ADS Advanced Super Bimension Switch
  • the common substrate 29 is disposed on the cassette substrate 42, the array substrate is provided with the pixel electrode 24, and the pixel electrode 24 forms an electric field control with the common electrode 29 on the counter substrate 42.
  • the liquid crystal is deflected and the phase transfer layer 28 is located above the layer in which the pixel electrode 24 is located.
  • phase shift occurs when passing through the phase transfer layer, for example, phase shift is 180°, and energy is canceled with energy of the light beam that has not passed through the phase transfer layer. Therefore, there is no problem of light leakage, which further solves the display. There is a problem of color cast when there is a solid color picture.
  • the phase transfer layer 28 is insulated from the pixel electrode 24, and the phase transfer layer 28 applies a bias voltage for driving the phase transfer layer coverage area with the common electrode 29 on the counter substrate 42 (phase transfer)
  • the liquid crystal of the corresponding region of the layer is deflected and kept vertical, thereby controlling the liquid crystal orientation of the non-display area, so that the liquid crystal of the non-display area is in a normally black state when energized, thereby better preventing the occurrence of light leakage and improving the liquid crystal display panel. Contrast.
  • the array substrate is provided with a first transparent electrode and a second transparent electrode, the first transparent electrode is away from the liquid crystal layer, the second transparent electrode is adjacent to the liquid crystal layer, and the phase transfer layer is located above the second transparent electrode.
  • the first transparent electrode when applied to the HADS mode, is a pixel electrode and the second transparent electrode is a common electrode.
  • the first transparent electrode when applied to the ADS mode, the first transparent electrode is a common electrode and the second transparent electrode is a pixel electrode.
  • FIG. 2c it is a schematic diagram of a display panel of the HADS mode.
  • the array substrate in the display panel of FIG. 2a includes a gate electrode 21 and a gate insulating layer 22 which are sequentially disposed on the first substrate substrate 20.
  • the phase transfer layer 28 may be directly disposed above the layer where the pixel electrode is located, without providing a second passivation layer.
  • the material of the phase transfer layer may be a material capable of phase shifting the light beam, such as a silicon molybdenum alloy or the like, which is not specifically limited herein. The following embodiments can be identical thereto.
  • the phase transfer layer in the array substrate is formed into a phase transfer layer film by magnetron sputtering, and a phase transfer layer pattern is formed on the phase transfer layer film based on a photolithography process.
  • this embodiment also provides a display device including any of the display panels given in this embodiment.
  • the display device may include a liquid crystal display device, for example, the display device may be any product or component having a display function such as a liquid crystal display, a liquid crystal television, a digital photo frame, a mobile phone, a watch, or a tablet.
  • a liquid crystal display for example, the display device may be any product or component having a display function such as a liquid crystal display, a liquid crystal television, a digital photo frame, a mobile phone, a watch, or a tablet.
  • This embodiment provides a method for manufacturing a display panel, including the following steps:
  • Step 1 Form an array substrate and form a phase transfer layer on the array substrate.
  • the phase transfer layer is located in the non-display area of the display panel, and the phase transfer layer is used to phase shift the light passing through the phase transfer layer.
  • Step 2 forming a counter substrate, and forming an array substrate with the phase transfer layer and the counter substrate to form a display panel.
  • forming the array substrate includes:
  • Forming a thin film transistor over the first substrate; forming the thin film transistor includes forming a gate layer, a gate insulating layer, an active layer, and a source/drain electrode layer;
  • Forming the counter substrate includes:
  • a common electrode layer is formed over the second substrate.
  • forming the array substrate includes:
  • a phase transfer layer is formed over the second transparent electrode layer.
  • the array substrate includes a gate insulating layer 22 formed on the first substrate 20 (see FIG. 1a and FIGS. 2a-2c for a thin film transistor structure), a first transparent electrode layer 32, a passivation layer 34, and a second transparent electrode layer 33 located above the passivation layer 34, and a phase transfer layer 28 above the second transparent electrode layer 33.
  • the data line 31 is located in the coverage area of the phase transfer layer 28, and the data line and the thin film transistor source 25' are electrically connection.
  • the thin film transistor 36 includes, for example, a gate electrode 21, a gate insulating layer 22, an active layer 23, a source electrode 25', and a drain electrode 25.
  • the first transparent electrode is a common electrode and the second transparent electrode is a pixel electrode;
  • the first transparent electrode is a pixel electrode, and the second transparent electrode is a common electrode.
  • the manufacturing process includes the following steps.
  • the first substrate may be a transparent glass substrate or quartz
  • the thin film transistor includes a gate layer, a gate insulating layer, an active layer, a source/drain electrode layer, and a gate layer
  • the gate electrode is formed by exposure, development, etching, and stripping
  • the source/drain electrode layer is formed by exposure, development, etching, and stripping to form a source and a drain.
  • a pixel electrode layer is formed on the thin film transistor, and the pixel electrode layer forms a pixel electrode by a patterning process, and the pixel electrode is connected to a drain of the thin film transistor.
  • a phase transfer layer is formed over the pixel electrode layer.
  • the phase transfer layer is formed by magnetron sputtering, and then exposed, developed, etched, and stripped to form a phase transfer layer in the non-display region of the array substrate.
  • the material of the phase transfer layer may be MoSiON, but is not limited thereto.
  • Forming the counter substrate, forming the counter substrate comprises forming a common electrode on the second substrate, and performing an encapsulation operation on the array substrate on which the phase transfer layer is formed and the counter substrate to form a display panel.
  • the formed display panel can be as shown in Figure 2b.
  • a phase transfer layer is disposed in a non-display area of the display panel for phase shifting the input light beam.
  • the display panel of the phase transfer layer is added to solve the problem of light leakage of the display panel.
  • the causes of the light leakage problem include: when performing the box operation, there is an error in the normal operation process, so that when the light emitted by the backlight is obliquely projected, the light will be transmitted and refracted after being input onto the array substrate, thereby being present. The problem of light leakage.
  • a phase transfer layer is disposed on a non-display area corresponding to the array substrate, and the phase transfer layer is used for phase shifting the input light beam, and the light is applied to the array substrate in the display panel.
  • the phase transfer layer can phase shift the reflected or transmitted light.
  • the beam and the non-phase-shifted beam can cancel each other's energy (light intensity), so that it does not appear.
  • the problem of light leakage causes a problem of color shift when the TFT-LCD displays a solid color picture due to the cross-color of the side view.

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Abstract

一种显示面板及其制造方法、显示装置，该显示面板包括相对设置的阵列基板（41）、对盒基板（42）以及位于所述阵列基板（41）和对盒基板（42）之间的液晶层（50），所述显示面板包括显示区域（001）和非显示区域（002），在所述阵列基板（41）对应的非显示区域（002）设置有相转移层（28），所述相转移层（28）用于将经过相转移层（28）的光进行相位转移，用以解决由于侧视角存在串色引起的TFT-LCD显示纯色画面时会存在色偏的问题。

Description

显示面板及其制造方法、显示装置 技术领域
本发明至少一实施例涉及一种显示面板及其制造方法、显示装置。
背景技术
近年来，随着数字化电视的普及，通常的阴极射线管(Cathode Ray Tube，CRT)显示技术由于数字化困难以及体积大、重量大、有辐射等缺点，逐渐被新一代显示技术所替代。液晶显示器(Liquid Crystal Display，LCD)具有重量轻、体积小、功耗低、无辐射、显示分辨率高等优点，逐渐成为显示技术领域中的主流产品。
LCD包括一个分布着多个薄膜晶体管(Thin Film Transistor，TFT)的显示面板、一个驱动TFT源极的带有数据(Data)线的源极驱动集成电路(Source Driver IC)、一个驱动TFT栅极的带有栅极(Gate)线的栅极驱动集成电路(Gate Driver IC)以及背光模块，显示面板上一个TFT对应一个子像素(sub-pixel)，每个TFT连接像素电极，像素电极与公共电极形成电场，控制与该TFT对应的子像素的充电和放电。
发明内容
本发明至少一实施例提供了一种显示面板及其制造方法、显示装置，用以解决由于侧视角存在串色引起的TFT-LCD显示纯色画面时会存在色偏的问题。
本发明至少一实施例提供一种显示面板，包括相对设置的阵列基板、对盒基板以及位于所述阵列基板和对盒基板之间的液晶层，其中，所述显示面板包括显示区域和非显示区域，在所述阵列基板对应的非显示区域设置有相转移层，所述相转移层用于将经过相转移层的光进行相位转移。
例如，在本发明一实施例提供的显示面板中，在所述非显示区域设置有黑矩阵，所述相转移层在阵列基板的正投影与所述非显示区域中的黑矩阵在阵列基板的正投影重合。
例如，在本发明一实施例提供的显示面板中，所述相转移层位于所述阵 列基板靠近液晶层一侧的所有层的上方。
例如，在本发明一实施例提供的显示面板中，所述对盒基板设置有公共电极，所述阵列基板设置有像素电极，所述相转移层位于所述像素电极所在层的上方。
例如，在本发明一实施例提供的显示面板中，所述相转移层与所述像素电极绝缘设置，所述相转移层施加偏置电压，用于驱动相转移层覆盖区域的液晶偏转。
例如，在本发明一实施例提供的显示面板中，所述阵列基板设置有第一透明电极和第二透明电极，所述第一透明电极远离所述液晶层，所述第二透明电极靠近所述液晶层，所述相转移层位于所述第二透明电极的上方。
例如，在本发明一实施例提供的显示面板中，所述第一透明电极为像素电极，所述第二透明电极为公共电极；或所述第一透明电极为公共电极，所述第二透明电极为像素电极。
本发明实施例还提供一种显示装置，包括上述任一种显示面板。
本发明实施例还提供一种显示面板的制造方法，包括如下步骤：
形成阵列基板，并在所述阵列基板上形成相转移层，所述相转移层位于显示面板的非显示区域，所述相转移层用于将经过相转移层的光进行相位转移；
形成对盒基板，并将形成有所述相转移层的所述阵列基板与所述对盒基板对盒形成显示面板。
例如，在本发明一实施例提供的显示面板的制造方法中，所述形成阵列基板包括：提供第一衬底基板；形成位于所述第一衬底基板上方的薄膜晶体管；形成位于所述薄膜晶体管上方的像素电极层；形成在所述像素电极层上方的相转移层；所述形成对盒基板包括：提供第二衬底基板：形成在所述第二衬底基板上方的公共电极层。
例如，在本发明一实施例提供的显示面板的制造方法中，所述形成阵列基板包括：提供第一衬底基板；形成位于所述第一衬底基板上方的薄膜晶体管；形成位于所述薄膜晶体管上方的第一透明电极层；形成在所述第一透明电极层上方的第二透明电极层；形成在所述第二透明电极层上方的相转移层。
例如，在本发明一实施例提供的显示面板的制造方法中，所述第一透明 电极为像素电极，所述第二透明电极为公共电极，或所述第一透明电极为公共电极，所述第二透明电极为像素电极。
例如，在本发明一实施例提供的显示面板的制造方法中，所述相转移层的材料为MoSiON。
附图说明
为了更清楚地说明本发明实施例的技术方案，下面将对实施例的附图作简单地介绍，显而易见地，下面描述中的附图仅仅涉及本发明的一些实施例，而非对本发明的限制。
图1a为TFT-LCD中显示面板俯视示意图；
图1b为TFT-LCD显示面板发生漏光剖面示意图；
图1c为图1a所示的TFT-LCD的虚线框所示区域C内阵列基板的俯视示意图；
图2a为本发明一实施例提供的一种显示面板剖面结构示意图；
图2b为本发明一实施例提供的另一种显示面板剖面结构示意图；
图2c为本发明一实施例提供的另一种显示面板剖面结构示意图(图1c中B-B’向剖视图)；
图3为相转移层工作原理示意图；
图4为本发明实施例的显示面板剖面结构示意图。
具体实施方式
为使本发明实施例的目的、技术方案和优点更加清楚，下面将结合本发明实施例的附图，对本发明实施例的技术方案进行清楚、完整地描述。显然，所描述的实施例是本发明的一部分实施例，而不是全部的实施例。基于所描述的本发明的实施例，本领域普通技术人员在无需创造性劳动的前提下所获得的所有其他实施例，都属于本发明保护的范围。
图1a为一种TFT-LCD中显示面板俯视示意图，该显示面板包括显示区域001和非显示区域002；显示面板包括相对设置的阵列基板41、对盒基板42以及位于阵列基板和对盒基板之间的液晶层50(如图1b所示)，对盒基板42上的显示区域001和非显示区域002分别与阵列基板的显示区域001和非 显示区域002相对应。显示区域001配置来出射光或透射光，非显示区域002配置来分隔显示区域。以下各实施例可与此相同。
例如，如图1a所示，阵列基板包括多条栅线71和多条数据线72，多条栅线71和多条数据线72交叉且绝缘设置，例如，栅线71沿横向延伸，数据线72沿竖向延伸。例如，多条栅线71和多条数据线72交叉限定多个子像素10。例如，一个子像素10还包括一个开关元件和与该开关元件相连的像素电极24。开关元件例如为薄膜晶体管36。
需要说明的是，子像素10可以由多条栅线71和多条数据线72限定而得，但不限于此。子像素10例如包括一条栅线、一条数据线、一个像素电极和一个开关元件。子像素10为阵列基板或对盒基板中最小的用以进行显示的单元。例如，显示区域001对应于多个子像素的出射光或透射光的区域。相邻子像素的显示区域001之间设置有非显示区域002。
需要说明的是，本发明各实施例中所述的显示区域001和非显示区域002对应于显示面板的微观结构，在实际应用中，因人眼难以区分出微观的显示区域001和非显示区域002，显示区域001和非显示区域002共同构成显示面板的图像显示区域(画面显示区域)。
如图1b所示，为TFT-LCD剖面示意图，TFT-LCD在进行画面显示的过程中，由于光线存在透射和折射，并且不同材质，对不同波长的光透射率以及折射率也不完全相同。一个像素单元例如包括用于显示不同颜色的多个子像素，以实现彩色显示。例如，TFT-LCD的阵列基板中的像素单元可包含红色子像素、绿色子像素和蓝色子像素，分别通过R、G和B标识)。TFT-LCD在进行画面显示的过程中，背光源发射的光垂直落在TFT-LCD的阵列基板上的情况下，光线可以直接反射，但是由背光源发出的光斜向投射的时候，由于入射角度的问题，光线会在投入到阵列基板上之后发生反射或透射，此时TFT-LCD在侧视角存在串色问题，如图1b所示的绿色子像素漏光(例如，如图1b中G子像素漏光)，这样TFT-LCD显示纯色画面时会存在色偏。
需要说明的是，像素单元可包含红色子像素、绿色子像素和蓝色子像素，但不限于此。并且，子像素的排布也不限于图1a中所示的各行各列彼此对齐的矩阵排布方式。例如，子像素还可以是各行各列彼此错开例如半个子像素的宽度或高度的“品”字形排列方式。
图1c为图1a所示的TFT-LCD的虚线框所示区域C内阵列基板的俯视示意图，板状的像素电极24经过孔26’与漏极25电连接。狭缝状的公共电极29与像素电极24绝缘设置，并设置在像素电极24所在层的上方。例如，栅线71可与栅极21同层形成，源极25’可与数据线72同层形成。图1c中还示出了有源层23。
本发明至少一实施例提供一种显示面板，包括相对设置的阵列基板、对盒基板以及位于阵列基板和对盒基板之间的液晶层，该显示面板包括显示区域和非显示区域，在阵列基板对应的非显示区域设置有相转移层，相转移层用于将经过相转移层的光进行相位转移。
在显示面板的非显示区域设置有相转移层，相转移层用于将投入的光束进行相位转移。在非显示区域设置了相转移层的显示面板，光线在投入到显示面板中的下基板之后发生反射或透射时，相转移层可以将反射或透射的光进行相位转移，这样，进行相位转移后光束的能量(光强)，与未进行相位转移光束的能量(光强)，二者可以互相抵消，从而不会出现光线漏光的问题，进而解决了显示纯色画面时会存在色偏的问题。
例如，在本发明一实施例提供的显示面板中，在非显示区域设置有黑矩阵，相转移层在阵列基板的正投影与非显示区域中的黑矩阵在阵列基板的正投影重合。
例如，在本发明一实施例提供的显示面板中，相转移层位于阵列基板靠近液晶层一侧的所有层的上方。
例如，在本发明一实施例提供的显示面板中，显示面板的对盒基板设置有公共电极，阵列基板设置有像素电极，相转移层位于像素电极所在层的上方。
例如，在本发明一实施例提供的显示面板中，相转移层与像素电极绝缘设置，相转移层施加偏置电压，用于驱动相转移层覆盖区域(对应区域)的液晶偏转。
例如，在本发明一实施例提供的显示面板中，阵列基板设置有第一透明电极和第二透明电极，第一透明电极远离液晶层，第二透明电极靠近液晶层，相转移层位于第二透明电极的上方。
例如，在本发明一实施例提供的显示面板中，第一透明电极为像素电极， 第二透明电极为公共电极；或第一透明电极为公共电极，第二透明电极为像素电极。
下面给出几个具体的实施例予以说明。
实施例一
如图2a所示，显示面板包括相对设置的阵列基板41、对盒基板42以及位于阵列基板41和对盒基板42之间的液晶层50。显示面板包括显示区域001和非显示区域002(亦可参见图1a)，在阵列基板41对应的非显示区域设置相转移层28，相转移层28用于将经过相转移层的光进行相位转移。
在显示面板进行图像显示时，如图2a所示，假设光束1和光束2照射到显示面板中的非显示区域002上，光束1照射过来时，投入到设置的相转移层上，光束1的相位发生变化，光束2照射过来时，没有经过相转移层，因此光束2的相位没有发生变化，这样，发生相位变化的光束1的能量(光强)，与未发生相位变化的光束2的能量(光强)，能够相互抵消，图2a中标号60代表的区域为能量抵消区域，从而使得显示面板不会出现光线漏光的问题，进而解决了显示纯色画面时会存在色偏的问题。即使对盒操作过程中存在误差，也能够通过增加的相转移层来解决漏光问题。
例如，本实施例给出的显示面板中，显示面板的非显示区域002中设置的相转移层28，可以使得投入到相转移层28的光束发生180°偏转，这样可以保证发生相位变化的光束的能量和未发生相位变化的光束的能量完全抵消，不会出现漏光，进一步提升显示面板的显示效果。
例如，如图2a所示，对盒基板42的第二衬底基板20’上设置有彩膜层35，彩膜层用以实现滤光作用，以实现彩色图像显示。
例如，如图3所示的进行相位转移前后的对比示意图，光束入射到阵列基板中时，如果未设置相转移层，则如图3左边所示，光束直接透过，相位不发生任何偏转。如果设置相转移层，如图3右边所示，光束在投入到相转移层28时发生相位转移，例如，转移180°，为便于区分，将发生相位偏移的光束标识为501，这样，通过相转移层的设置，可以实现将经过相转移层28的光束501的能量与未经过相转移层的光束502的能量进行能量抵消的目的。
例如，相转移层使光线发生相转移变化原理可以参照如图3所示，例如， 按照下述公式：
Figure PCTCN2015093902-appb-000001
其中，
Figure PCTCN2015093902-appb-000002
为相位(例如为π)，λ是光的波长，n是折射系数，d是相转移层的厚度。
例如，在本实施例的一个示例中，非显示区域002设置有黑矩阵30，黑矩阵30在阵列基板41的正投影覆盖相转移层28在阵列基板41的正投影。例如，黑矩阵设置在对盒基板42上，例如，在对盒基板42的第二衬底基板20’上设置黑矩阵。
例如，在本实施例的一个示例中，阵列基板41包括第一衬底基板20，相转移层28在第一衬底基板20的正投影与黑矩阵30在第一衬底基板20的正投影区域重合。
相转移层28在第一衬底基板20的正投影与黑矩阵30在第一衬底基板20的正投影重合，相当于相转移层的正投影区域恰好覆盖黑矩阵在第一衬底基板20上的正投影。这样，在显示面板显示图像时，光束投射到第一衬底基板20时，可以较好地避免子像素漏光，也不会增加遮光，形成阴影，从而解决显示纯色画面时会存在色偏的问题。
例如，在本实施例的一个示例中，相转移层28位于阵列基板41上靠近液晶层50一侧的所有层的上方。这样，在显示面板显示图像时，光束投射到第二衬底基板时，可以较好地避免子像素漏光，也不会增加遮光，形成阴影，从而解决显示纯色画面时会存在色偏的问题。
例如，上述显示面板既可以适用于扭曲向列型(Twisted Nematic，TN)模式的显示面板，也可以适用于高级超维场开关(Advanced super bimension switch，ADS)模式。
当上述显示面板适用于TN模式时，如图2b所示，对盒基板42设置有公共电极29，阵列基板设置有像素电极24，像素电极24与对盒基板42上的公共电极29形成电场控制液晶偏转，相转移层28位于像素电极24所在层的上方。
通过在像素电极层上方形成相转移层，光束入射到阵列基板中时，在经过相转移层时发生相位转移，例如，相位转移180°，与未经过相转移层的光束的能量进行能量抵消，从而不会出现光线漏光的问题，进而解决了显示 纯色画面时会存在色偏的问题。
例如，针对TN模式的显示面板，相转移层28与像素电极24绝缘设置，相转移层28施加偏置电压，用于与对盒基板42上的公共电极29驱动相转移层覆盖区域(相转移层的对应区域)的液晶偏转，保持垂直，从而控制非显示区域的液晶取向，使非显示区域的液晶通电时处于常黑的状态，从而更好地阻止漏光现象的产生，提高液晶显示面板的对比度。
当上述显示面板适用于ADS模式时，阵列基板设置有第一透明电极和第二透明电极，第一透明电极远离液晶层，第二透明电极靠近液晶层，相转移层位于第二透明电极的上方。
例如，当适用于HADS模式时，第一透明电极为像素电极，第二透明电极为公共电极。当适用于ADS模式时，第一透明电极为公共电极，第二透明电极为像素电极。如图2c所示，为HADS模式的显示面板示意图。
为了更好地阐述本实施例给出的技术方案，为了阐述相转移层的位置，图2a显示面板中的阵列基板包括依次设置在第一衬底基板20上的栅极21、栅绝缘层22、有源层23、源极25’和漏极25，第一钝化层26，像素电极24，第二钝化层27和位于第二钝化层27上方的相转移层28。需要说明的是，也可以直接将相转移层28设置在像素电极所在层的上方，无需设置第二钝化层。本实施例给出的显示面板中，相转移层的材料可以是能够将光束进行相位转移的材料，例如硅钼合金等，在此不做具体限定。以下各实施例可与此相同。
例如，在本实施例的一个示例中，阵列基板中的相转移层通过磁控溅射形成相转移层薄膜，并基于光刻工艺在相转移层薄膜上形成相转移层图形。
相应地，本实施例还给出一种显示装置，包括本实施例给出的任一显示面板。
例如，显示装置可以包括液晶显示装置，例如该显示装置可以为液晶显示器、液晶电视、数码相框、手机、手表或平板电脑等任何具有显示功能的产品或者部件。
实施例二
本实施例给出一种显示面板的制造方法，包括如下步骤：
步骤一：形成阵列基板，并在阵列基板上形成相转移层。
相转移层位于显示面板的非显示区域，相转移层用于将经过相转移层的光进行相位转移。
步骤二：形成对盒基板，并将形成有相转移层的阵列基板与对盒基板对盒形成显示面板。
例如，在本实施例的一个示例中，针对TN模式的显示面板，形成阵列基板包括：
提供第一衬底基板；
形成位于第一衬底基板上方的薄膜晶体管，形成该薄膜晶体管包括形成栅极层、栅绝缘层、有源层和源漏电极层；
形成位于薄膜晶体管上方的像素电极层；
形成在像素电极层上方的相转移层；
形成对盒基板包括：
提供第二衬底基板：
形成在第二衬底基板上方的公共电极层。
例如，在本实施例的一个示例中，针对ADS模式的显示面板，形成该阵列基板包括：
提供第一衬底基板；
形成位于第一衬底基板上方的薄膜晶体管；
形成位于薄膜晶体管上方的第一透明电极层；
形成在第一透明电极层上方的第二透明电极层；
形成在第二透明电极层上方的相转移层。
如图4所示，阵列基板包括形成在第一衬底基板20上的栅绝缘层22(薄膜晶体管结构请参见图1a以及图2a-2c)，第一透明电极层32、钝化层34和位于钝化层34上方的第二透明电极层33，以及位于第二透明电极层33上方的相转移层28，数据线31位于相转移层28覆盖区域，数据线与薄膜晶体管源极25’电连接。薄膜晶体管36例如包括栅极21、栅绝缘层22、有源层23、源极25’和漏极25。
例如，对于ADS模式，第一透明电极为公共电极，第二透明电极为像素电极；对于HADS模式，第一透明电极为像素电极，第二透明电极为公共电极。
以TN模式的显示面板为例，其制造流程包括如下步骤。
在第一衬底基板上形成薄膜晶体管，例如，第一衬底基板可以是透明玻璃基板或者是石英，薄膜晶体管包括栅极层、栅绝缘层、有源层、源漏电极层，栅极层通过曝光，显影，刻蚀，剥离形成栅极，源漏电极层通过曝光，显影，刻蚀，剥离形成源极和漏极。
在薄膜晶体管上形成像素电极层，像素电极层通过构图工艺形成像素电极，像素电极与薄膜晶体管的漏极连接。
在像素电极层上方上形成相转移层。
相转移层通过磁控溅射形成，然后进行曝光，显影，刻蚀，剥离，在阵列基板的非显示区域形成相转移层。
例如，相转移层的材料可以是MoSiON，但不限于此。
形成对盒基板，形成对盒基板包括在第二衬底基板上形成公共电极，并将形成有相转移层的阵列基板与对盒基板进行对盒操作，形成显示面板。形成的显示面板可如图2b所示。
本实施例制造形成的显示面板，在显示面板的非显示区域设置有相转移层，用于将投入的光束进行相位转移。增加了相转移层的显示面板，可以解决显示面板的漏光问题。漏光问题产生原因包括：在进行对盒操作的时候，正常操作过程中存在误差，使得由背光源发出的光斜向投射的时候，光线会在投入到阵列基板上之后发生透射及折射，从而存在漏光的问题。
本发明至少一实施例提供的显示面板，在阵列基板对应的非显示区域上设置有相转移层，相转移层用于将投入的光束进行相位转移，光线在投入到显示面板中阵列基板上之后发生反射或透射时，相转移层可以将反射或透射的光进行相位转移，这样，进行相位转移后光束，与未进行相位转移光束，二者能量(光强)可以互相抵消，从而不会出现光线漏光的问题，进而解决了由于侧视角存在串色引起的TFT-LCD显示纯色画面时会存在色偏的问题。
有以下几点需要说明：
(1)除非另作定义，此处使用的技术术语或者科学术语应当为本发明所属领域内具有一般技能的人士所理解的通常意义。本公开中使用的“第一”、“第二”以及类似的词语并不表示任何顺序、数量或者重要性，而只是用来区分不同的组成部分。
(2)本发明各实施例以及附图中，只涉及到与本发明实施例涉及到的结构，其他结构可参考通常设计。
(3)为了清晰起见，在用于描述本发明的实施例的附图中，层或区域的厚度被放大。可以理解，当诸如层、膜、区域或基板之类的元件被称作位于另一元件“上”或“下”时，该元件可以“直接”位于另一元件“上”或“下”，或者可以存在中间元件。
(4)本发明各实施例中所给出的不同模式的显示面板用于例举以利理解，并不限制本发明。
(5)在不冲突的情况下，本发明的实施例及实施例中的特征可以相互组合。
以上所述，仅为本发明的具体实施方式，但本发明的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本发明揭露的技术范围内，可轻易想到变化或替换，都应涵盖在本发明的保护范围之内。因此，本发明的保护范围应以所述权利要求的保护范围为准。
本专利申请要求于2015年6月11日递交的中国专利申请第201510320668.9号的优先权，在此全文引用上述中国专利申请公开的内容以作为本申请的一部分。

Claims (13)

  1. 一种显示面板，包括相对设置的阵列基板、对盒基板以及位于所述阵列基板和对盒基板之间的液晶层，其中，所述显示面板包括显示区域和非显示区域，在所述阵列基板对应的非显示区域设置有相转移层，所述相转移层用于将经过相转移层的光进行相位转移。
  2. 如权利要求1所述的显示面板，其中，在所述非显示区域设置有黑矩阵，所述相转移层在阵列基板的正投影与所述非显示区域中的黑矩阵在阵列基板的正投影重合。
  3. 如权利要求1或2所述的显示面板，其中，所述相转移层位于所述阵列基板靠近液晶层一侧的所有层的上方。
  4. 如权利要求1-3任一项所述的显示面板，其中，所述对盒基板设置有公共电极，所述阵列基板设置有像素电极，所述相转移层位于所述像素电极所在层的上方。
  5. 如权利要求4所述的显示面板，其中，所述相转移层与所述像素电极绝缘设置，所述相转移层施加偏置电压，用于驱动相转移层覆盖区域的液晶偏转。
  6. 如权利要求1-3任一项所述的显示面板，其中，所述阵列基板设置有第一透明电极和第二透明电极，所述第一透明电极远离所述液晶层，所述第二透明电极靠近所述液晶层，所述相转移层位于所述第二透明电极的上方。
  7. 如权利要求6所述的显示面板，其中，所述第一透明电极为像素电极，所述第二透明电极为公共电极；或
    所述第一透明电极为公共电极，所述第二透明电极为像素电极。
  8. 一种显示装置，包括如权利要求1-7任一项所述的显示面板。
  9. 一种显示面板的制造方法，包括如下步骤：
    形成阵列基板，并在所述阵列基板上形成相转移层，所述相转移层位于显示面板的非显示区域，所述相转移层用于将经过相转移层的光进行相位转移；
    形成对盒基板，并将形成有所述相转移层的所述阵列基板与所述对盒基板对盒形成显示面板。
  10. 如权利要求9所述的显示面板的制造方法，其中，所述形成阵列基板包括：
    提供第一衬底基板；
    形成位于所述第一衬底基板上方的薄膜晶体管；
    形成位于所述薄膜晶体管上方的像素电极层；
    形成在所述像素电极层上方的相转移层；
    所述形成对盒基板包括：
    提供第二衬底基板：
    形成在所述第二衬底基板上方的公共电极层。
  11. 如权利要求9所述的显示面板的制造方法，其中，所述形成阵列基板包括：
    提供第一衬底基板；
    形成位于所述第一衬底基板上方的薄膜晶体管；
    形成位于所述薄膜晶体管上方的第一透明电极层；
    形成在所述第一透明电极层上方的第二透明电极层；
    形成在所述第二透明电极层上方的相转移层。
  12. 如权利要求11所述的显示面板的制造方法，其中，所述第一透明电极为像素电极，所述第二透明电极为公共电极；或
    所述第一透明电极为公共电极，所述第二透明电极为像素电极。
  13. 如权利要求9-12任一项所述的显示面板的制造方法，其中，所述相转移层的材料为MoSiON。
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CN105974641B (zh) * 2016-06-20 2019-02-22 京东方科技集团股份有限公司 显示装置及其彩膜基板
CN109031821A (zh) * 2018-07-05 2018-12-18 Oppo广东移动通信有限公司 薄膜晶体管阵列基板、显示屏及电子设备
CN112186359B (zh) * 2019-07-05 2024-05-14 群创光电股份有限公司 电子装置

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1534331A (zh) * 2003-04-01 2004-10-06 精工爱普生株式会社 液晶装置及电子设备
CN1871543A (zh) * 2003-10-22 2006-11-29 东芝松下显示技术有限公司 液晶显示单元
US20070229737A1 (en) * 2006-03-31 2007-10-04 Hitachi Displays, Ltd. Liquid crystal display apparatus
US20070291205A1 (en) * 2006-06-19 2007-12-20 Wintek Corporation Transflective liquid crystal display
CN103454850A (zh) * 2013-09-24 2013-12-18 北京京东方光电科技有限公司 掩膜板及隔垫物制作方法
CN104765216A (zh) * 2015-04-30 2015-07-08 京东方科技集团股份有限公司 阵列基板及其制备方法及显示装置
CN104849925A (zh) * 2015-06-11 2015-08-19 京东方科技集团股份有限公司 一种显示面板及其制造方法、显示装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100548535B1 (ko) * 1999-04-27 2006-02-02 주식회사 하이닉스반도체 반도체 소자의 위상 반전 마스크의 리페어 방법
WO2006010431A1 (en) * 2004-07-28 2006-02-02 Merck Patent Gmbh Transflective lcd comprising a patterned retardation film
JP2007241071A (ja) * 2006-03-10 2007-09-20 Fujifilm Corp 反射透過型液晶表示装置
KR20090051981A (ko) * 2007-11-20 2009-05-25 엘지디스플레이 주식회사 반사투과형 액정표시장치 및 그 제조방법
KR101839332B1 (ko) * 2011-10-19 2018-03-19 엘지디스플레이 주식회사 광시야각 액정표시소자
KR101335526B1 (ko) * 2012-09-12 2013-12-02 엘지디스플레이 주식회사 입체영상 표시장치
KR102642398B1 (ko) * 2015-06-22 2024-02-29 삼성디스플레이 주식회사 표시 장치

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1534331A (zh) * 2003-04-01 2004-10-06 精工爱普生株式会社 液晶装置及电子设备
CN1871543A (zh) * 2003-10-22 2006-11-29 东芝松下显示技术有限公司 液晶显示单元
US20070229737A1 (en) * 2006-03-31 2007-10-04 Hitachi Displays, Ltd. Liquid crystal display apparatus
US20070291205A1 (en) * 2006-06-19 2007-12-20 Wintek Corporation Transflective liquid crystal display
CN103454850A (zh) * 2013-09-24 2013-12-18 北京京东方光电科技有限公司 掩膜板及隔垫物制作方法
CN104765216A (zh) * 2015-04-30 2015-07-08 京东方科技集团股份有限公司 阵列基板及其制备方法及显示装置
CN104849925A (zh) * 2015-06-11 2015-08-19 京东方科技集团股份有限公司 一种显示面板及其制造方法、显示装置

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