WO2016195061A1 - 保護テープ、及びこれを用いた半導体装置の製造方法 - Google Patents
保護テープ、及びこれを用いた半導体装置の製造方法 Download PDFInfo
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- WO2016195061A1 WO2016195061A1 PCT/JP2016/066547 JP2016066547W WO2016195061A1 WO 2016195061 A1 WO2016195061 A1 WO 2016195061A1 JP 2016066547 W JP2016066547 W JP 2016066547W WO 2016195061 A1 WO2016195061 A1 WO 2016195061A1
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- Prior art keywords
- thermoplastic resin
- protective tape
- resin layer
- layer
- formula
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Definitions
- the present invention relates to a protective tape used for manufacturing a semiconductor device and a method for manufacturing a semiconductor device using the same.
- the post-process of the semiconductor manufacturing process for flip chip mounting is performed as follows. First, an adhesive sheet or tape called Back Grind Tape is attached to the bump forming surface of the wafer on which a plurality of bumps (projection electrodes) are formed for the purpose of protecting the bumps. The opposite surface is ground to a predetermined thickness (see, for example, Patent Documents 1 to 3). After grinding, the back grind tape is peeled off, and the wafer is diced into individual semiconductor chips. Next, the semiconductor chip is flip-chip mounted on another semiconductor chip or a substrate. Further, the underfill is cured to reinforce the semiconductor chip.
- Patent Document 1 a back grind tape using a laminate of a thermosetting resin layer and a thermoplastic resin layer is used, and only the thermosetting resin layer is left on the bump forming surface of the wafer and other layers are removed. How to do is being studied.
- the wafer In the conventional back grind tape, the wafer is greatly warped after being back grinded and cannot be handled in a later process. Also, in the conventional back grind tape, when only the thermosetting resin layer is left on the wafer and the other layers are removed, the resin remains on the bumps. It will decrease.
- the present invention has been proposed in view of such a conventional situation, and it is possible to improve the solderability and reduce the amount of wafer warpage, and a semiconductor device using the same.
- a manufacturing method is provided.
- the inventors of the present invention have a protective tape having an adhesive layer, a first thermoplastic resin layer, a second thermoplastic resin layer, and a base film layer in this order, which will be described later. It has been found that the above-mentioned problems can be solved by satisfying the conditions of the equations (1) to (3).
- the protective tape according to the present invention has an adhesive layer, a first thermoplastic resin layer, a second thermoplastic resin layer, and a base film layer in this order. Satisfy the condition (3).
- Ga is the storage shear modulus of the first thermoplastic resin layer at the application temperature for applying the protective tape
- Gb is the second thermoplastic resin layer at the application temperature for applying the protective tape.
- Ta is the thickness of the first thermoplastic resin layer
- Tb is the thickness of the second thermoplastic resin layer, in formula (3), Ga and Gb. Is synonymous with Ga and Gb in formula (1), and Ta and Tb are synonymous with Ta and Tb in formula (2).
- the method for manufacturing a semiconductor device includes a protective tape applying step of applying a protective tape having an adhesive layer to a wafer surface on which bumps are formed, and a grinding process is performed on the opposite surface of the wafer attached with the protective tape.
- a grinding treatment step, and a protective tape peeling step for peeling off the protective tape leaving the adhesive layer and removing the other layers, the protective tape comprising an adhesive layer, a first thermoplastic resin layer, The second thermoplastic resin layer and the base film layer are provided in this order and satisfy the conditions of the above formulas (1) to (3).
- the semiconductor device according to the present invention is obtained by the above-described method for manufacturing a semiconductor device.
- the protective tape has an adhesive layer, a first thermoplastic resin layer, a second thermoplastic resin layer, and a base film layer in this order, and the formulas (1) to (3)
- a layer other than the adhesive layer base film layer, first thermoplastic resin layer, and second layer
- the elastic modulus correction value obtained by correcting the elastic modulus of the first thermoplastic resin layer and the second thermoplastic resin layer with the thickness is adjusted to an appropriate range. Therefore, the amount of warpage of the wafer after back grinding can be reduced.
- FIG. 1 is a cross-sectional view schematically showing a protective tape.
- FIG. 2 is a cross-sectional view showing an outline of the protective tape attaching step.
- FIG. 3 is a cross-sectional view showing an outline of a grinding process.
- FIG. 4 is a cross-sectional view showing an outline of the adhesive tape attaching step.
- FIG. 5 is a cross-sectional view schematically showing the protective tape peeling step.
- FIG. 6 is a cross-sectional view schematically showing the curing process.
- FIG. 7 is a cross-sectional view schematically showing the dicing process.
- FIG. 8 is a cross-sectional view showing an outline of the expanding process.
- FIG. 9 is a cross-sectional view schematically showing the pickup process.
- FIG. 10 is a cross-sectional view schematically showing the mounting process.
- the protective tape according to the present embodiment has an adhesive layer, a first thermoplastic resin layer, a second thermoplastic resin layer, and a base film layer in this order. Satisfy the condition (3).
- Ga is the storage shear modulus of the first thermoplastic resin layer at the application temperature for applying the protective tape
- Gb is the second thermoplastic resin layer at the application temperature for applying the protective tape.
- Ta is the thickness of the first thermoplastic resin layer
- Tb is the thickness of the second thermoplastic resin layer, in formula (3), Ga and Gb. Is synonymous with Ga and Gb in formula (1), and Ta and Tb are synonymous with Ta and Tb in formula (2).
- Protective tape satisfies the condition of formula (1). That is, the storage shear elastic modulus (Ga) of the first thermoplastic resin layer at the application temperature for applying the protective tape is the storage shear elastic modulus (Gb) of the second thermoplastic resin layer at the application temperature for applying the protective tape. Bigger than.
- the surface layer of the adhesive layer that is, the first thermoplastic resin layer is harder than the second thermoplastic resin layer, so that the first thermoplastic resin layer is deformed. At this time, the second thermoplastic resin layer is unlikely to inhibit the deformation of the first thermoplastic resin layer.
- the protective tape satisfies the condition of formula (2). That is, the thickness (Tb) of the second thermoplastic resin layer is larger than the thickness (Ta) of the first thermoplastic resin layer.
- the protective tape satisfies the condition of formula (3). That is, the elastic modulus correction value obtained by correcting the elastic modulus of the first thermoplastic resin layer and the elastic modulus of the second thermoplastic resin layer with the thicknesses of these layers is 1.4E + 06 Pa or less. By satisfying the condition of Expression (3), the elastic modulus correction value is adjusted to an appropriate range, so that the amount of warpage of the wafer after back grinding can be reduced.
- the value on the left side of Equation (3) that is, the lower limit value of the elastic modulus correction value is not particularly limited, but is preferably 1.0E + 05 Pa or more.
- the protective tape has the adhesive layer, the first thermoplastic resin layer, the second thermoplastic resin layer, and the base film layer in this order, and the formulas (1) to (3)
- a layer other than the adhesive layer base film layer, first thermoplastic resin layer, and second layer
- the adhesive layer it is difficult for the adhesive layer to remain on the bumps, so that the solderability can be improved. Further, the amount of warpage of the wafer after back grinding can be reduced.
- the protective tape preferably satisfies the condition of the formula (1A) in addition to the conditions of the formulas (1) to (3).
- the storage shear elastic modulus (Ga) of the first thermoplastic resin layer at the application temperature for applying the protective tape is the largest, and the storage shear elastic modulus of the second thermoplastic resin layer at the application temperature for applying the protective tape. It is preferable that (Gb) is the second largest and the storage shear modulus (Gn) of the adhesive layer at the application temperature at which the protective tape is applied is the third largest.
- the adhesive layer, the second thermoplastic resin layer, and the first thermoplastic resin layer are hardened in this order, so that the adhesive layer has a thickness higher than that of the first thermoplastic resin layer. Deformation and flow are very good. As a result, when the protective tape is applied to the wafer, adhesion of the adhesive layer onto the bumps of the wafer can be more effectively suppressed, and the adhesive layer is less likely to remain on the bumps. Can be made better.
- the protective tape preferably further satisfies the condition of the formula (2A) in addition to the conditions of the formulas (1) to (3).
- Tn ⁇ Ta ⁇ Tb
- Tn is the thickness of the adhesive layer
- Ta and Tb are synonymous with Ta and Tb in formula (2).
- the thickness (Tb) of the second thermoplastic resin layer is the largest
- the thickness (Ta) of the first thermoplastic resin layer is the second largest
- the thickness (Tn) of the adhesive layer is the third largest. It is preferable.
- the protective tape preferably further satisfies the condition of the following formula (4).
- the protective tape has a storage shear elastic modulus (Gn) of the adhesive layer at the application temperature at which the protective tape is applied, and a storage shear elastic modulus (Ga) of the first thermoplastic resin layer at the application temperature at which the protective tape is applied.
- Gn / Ga) is preferably 0.01 or less.
- the lower limit of the value (Gn / Ga) on the left side of the formula (4) is preferably 1.0E + 03 or more.
- FIG. 1 is a cross-sectional view schematically showing a protective tape.
- the protective tape 10 is called a back grind tape and protects the wafer from scratches, cracks, contamination, and the like in the grinding process.
- the protective tape 10 has an adhesive layer 11, a first thermoplastic resin layer 12, a second base film layer 13, and a base film layer 14 laminated in this order. .
- the storage shear modulus (Gn) at 60 ° C. of the adhesive layer 11 is preferably 1.0E + 01 Pa to 5.0E + 04 Pa, and more preferably 1.0E + 02 Pa to 3.5E + 03 Pa.
- the storage shear modulus of the adhesive layer 11 is preferably 1.0E + 01 Pa or more, it is possible to prevent the adhesive layer 11 from adhering to the bump tip while the bump penetrates the adhesive and covering the tip of the bump. Can do.
- it can suppress that resin of the adhesive bond layer 11 flows, when the protective tape 10 is affixed on a wafer.
- the bumps can penetrate the adhesive layer 11 more easily, and conduction can be improved.
- the resin composition of the adhesive layer 11 is not particularly limited.
- a thermosetting type such as a thermal anion curable type, a thermal cation curable type, a thermal radical curable type, a photo cation curable type, a photo radical curable type or the like. It is possible to use a mold, or a thermo / photo-curing type which is used in combination to substantially the same.
- thermosetting adhesive composition containing a film-forming resin, an epoxy resin, a curing agent, and a curing aid as the adhesive layer 11 will be described.
- the film forming resin various resins such as phenoxy resin, epoxy resin, modified epoxy resin, and urethane resin can be used. These film forming resins may be used alone or in combination of two or more. Among these, phenoxy resin is preferably used from the viewpoint of film formation state, connection reliability, and the like.
- the epoxy resin examples include dicyclopentadiene type epoxy resin, glycidyl ether type epoxy resin, glycidyl amine type epoxy resin, bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, spiro ring type epoxy resin, Naphthalene type epoxy resin, biphenyl type epoxy resin, terpene type epoxy resin, tetrabromobisphenol A type epoxy resin, cresol novolac type epoxy resin, phenol novolac type epoxy resin, ⁇ -naphthol novolak type epoxy resin, brominated phenol novolak type epoxy resin And so on.
- These epoxy resins may be used alone or in combination of two or more.
- a dicyclopentadiene type epoxy resin is preferably used from the viewpoint of high adhesion and heat resistance.
- the curing agent examples include novolak-type phenol resins, aliphatic amines, aromatic amines, acid anhydrides, and the like. These curing agents may be used alone or in combination of two or more. May be. Among these, a novolak type phenol resin is preferably used from the viewpoint of the crosslink density of the cured product.
- Curing aids include imidazoles such as 2-methylimidazole, 2-ethylimidazole, 2-ethyl-4-methylimidazole, 1,8-diazabicyclo (5,4,0) undecene-7 salt (DBU salt) ), Tertiary amines such as 2- (dimethylaminomethyl) phenol, phosphines such as triphenylphosphine, and metal compounds such as tin octylate. Of these, 2-ethyl-4-methylimidazole is preferred.
- an inorganic filler such as silane coupling agent, an elastomer such as acrylic rubber, and a pigment such as carbon black may be appropriately blended according to the purpose.
- Examples of the inorganic filler include silica, aluminum nitride, and alumina.
- An inorganic filler may be used individually by 1 type, or may use 2 or more types together.
- the inorganic filler is preferably surface-treated, and is preferably a hydrophilic inorganic filler.
- Examples of the hydrophilic inorganic filler include those obtained by surface-treating an inorganic filler with a hydrophilic surface treatment agent.
- Examples of hydrophilic surface treatment agents include silane coupling agents, titanate coupling agents, aluminum coupling agents, zircoaluminate coupling agents, Al 2 O 3 , TiO 2 , ZrO 2 , silicone, and stearic acid. Aluminum etc. are mentioned, A silane coupling agent is preferable.
- the thickness of the adhesive layer 11 is preferably 10 to 80% of the height of the bump formed on the wafer, and more preferably 10 to 60%. By making the height 10% or more of the bump height, it becomes easier to obtain the effect of reinforcing the bump. Moreover, the adhesive layer 11 can penetrate a bump more easily by setting it as 80% or less of the height of a bump. For example, when the height of the bump formed on the wafer is 100 to 200 ⁇ m, the thickness of the adhesive layer 11 is preferably 5 to 100 ⁇ m, and more preferably 5 to 30 ⁇ m.
- the first thermoplastic resin layer 12 is made of, for example, ethylene vinyl acetate copolymer (EVA), polyethylene, polypropylene, polyamide, polyacetal, polyethylene terephthalate, polybutylene terephthalate, fluororesin, polyphenylene sulfide, polystyrene, ABS. It is a layer made of a resin such as resin, acrylic resin, polycarbonate, polyurethane, polyvinyl chloride, polyphenylene oxide. The said resin may be used individually by 1 type, and may use 2 or more types together.
- EVA ethylene vinyl acetate copolymer
- polyethylene polypropylene
- polyamide polyacetal
- polyethylene terephthalate polybutylene terephthalate
- fluororesin polyphenylene sulfide
- polystyrene ABS
- It is a layer made of a resin such as resin, acrylic resin, polycarbonate, polyurethane, polyvinyl chloride, polyphenylene
- the storage shear modulus (Ga) at 60 ° C. of the first thermoplastic resin layer 12 is preferably 1.0E + 06 Pa to 1.0E + 09 Pa, and more preferably 1.0E + 06 Pa to 1.0E + 07 Pa.
- the thickness (Ta) of the first thermoplastic resin layer 12 is in a range satisfying the above-described formula (1), preferably 5 to 300 ⁇ m, and more preferably 5 to 200 ⁇ m.
- the second thermoplastic resin layer 13 is a layer made of the same resin as the first thermoplastic resin layer 12.
- the resin constituting the second thermoplastic resin layer may be used alone or in combination of two or more.
- the storage shear modulus (Gb) at 60 ° C. of the second thermoplastic resin layer 13 is preferably 1.0E + 04 Pa to 2.0E + 06 Pa, and preferably 1.0E + 04 Pa to 8.0E + 05 Pa.
- the thickness (Tb) of the second thermoplastic resin layer 13 is in a range satisfying the above-described formula (1), and is preferably 100 to 700 ⁇ m.
- Base film layer 14 As the substrate film layer 14, a porous substrate made of a plastic film such as polyethylene terephthalate, polyethylene, polypropylene, or polyester, paper, cloth, nonwoven fabric, or the like can be used.
- a plastic film such as polyethylene terephthalate, polyethylene, polypropylene, or polyester, paper, cloth, nonwoven fabric, or the like.
- the thickness of the base film layer 14 is preferably 25 to 200 ⁇ m, and more preferably 50 to 100 ⁇ m.
- the protective tape is not limited to the above-described configuration, and other layers may be formed on the surface of each layer or between adjacent layers.
- the protective tape may have a third thermoplastic resin layer in addition to the first thermoplastic resin layer and the second thermoplastic resin layer.
- the protective tape further includes a third thermoplastic resin layer different from the first thermoplastic resin layer and the second thermoplastic resin layer between the adhesive layer and the first thermoplastic resin layer. You may do it.
- Gc storage shear modulus
- Tc thickness of the third thermoplastic resin layer at the application temperature at which the protective tape is applied satisfy the conditions of the following formulas (1A) and (2A).
- the protective tape according to the present embodiment includes, for example, a base film layer and a thermoplastic resin layer in which a base film layer, a first thermoplastic resin layer, and a second thermoplastic resin layer are formed in this order. It can be obtained by laminating a laminate and an adhesive layer. The laminate of the base film layer and the thermoplastic resin layer can be obtained by extruding and molding a thermoplastic resin into the base film layer.
- the adhesive layer can be obtained, for example, by preparing the above-mentioned thermosetting adhesive composition, applying it to the peeled substrate using a bar coater, and drying it.
- a manufacturing method of a semiconductor device includes a protective tape attaching step of attaching a protective tape having an adhesive layer to a wafer surface on which bumps are formed, and a grinding process of grinding a surface opposite to the protective tape attaching surface
- the protective tape is a protective tape described above, which includes a process and a protective tape peeling process for peeling off the protective tape while leaving the adhesive layer and removing other layers.
- the curing process for curing the adhesive layer may be performed before any of the grinding process, the adhesive tape application process, and the dicing process.
- a semiconductor device manufacturing method shown as a specific example uses the protective tape mentioned above, and a hardening process is performed between an adhesive tape sticking process and a dicing process process. That is, a semiconductor device manufacturing method shown as a specific example includes a protective tape attaching step (A) for attaching a protective tape having an adhesive layer, a grinding step (B), an adhesive tape attaching step (C), and a protective tape. It has a peeling process (D), a curing process (E) for curing the adhesive layer, a dicing process (F), an expanding process (G), a pickup process (H), and a mounting process (I). .
- FIG. 2 is a cross-sectional view showing an outline of the protective tape attaching step.
- the protective tape 10 is attached to the surface of the wafer 21 on which the bumps 22 are formed.
- the application temperature for applying the protective tape 10 is preferably 25 ° C. to 100 ° C., more preferably 40 ° C. to 80 ° C., from the viewpoints of reducing voids, improving wafer adhesion, and preventing wafer warpage after wafer grinding.
- the wafer 21 has an integrated circuit formed on a semiconductor surface such as silicon and bumps 22 for connection.
- the thickness of the wafer 21 is not particularly limited, but is preferably 200 to 1000 ⁇ m.
- the bump 22 is not particularly limited, and examples thereof include a low melting point bump or a high melting point bump made of solder, a tin bump, a silver-tin bump, a silver-tin-copper bump, a gold bump, and a copper bump.
- the height of the bump 22 is preferably 10 to 200 ⁇ m, for example.
- the protective tape 10 is bonded in a state where the formation surface of the bump 22 and the adhesive layer 11 are in contact with each other. As shown in FIG. 2, the bump 22 penetrates the adhesive layer 11 and is embedded in the first thermoplastic resin layer 12. Further, the surface of the first thermoplastic resin layer 12 in contact with the second thermoplastic resin 13 is deformed so as to follow the shape of the bump 22. Further, the surface of the second thermoplastic resin layer 13 that contacts the first thermoplastic resin layer 12 is deformed so as to follow the deformation of the first thermoplastic resin layer 12.
- FIG. 3 is a cross-sectional view showing an outline of a grinding process.
- the opposite surface of the wafer 21 to which the protective tape 10 is attached that is, the surface opposite to the surface on which the bumps 22 are formed is fixed to a grinding apparatus for polishing. Polishing is usually performed until the thickness of the wafer 21 reaches 50 to 600 ⁇ m.
- the bumps 22 are reinforced by the adhesive layer 11, so that the wafer 21 may be polished to a thickness of 50 ⁇ m or less.
- FIG. 4 is a cross-sectional view showing an outline of the adhesive tape attaching step.
- the adhesive tape 30 is attached to the grinding surface.
- the adhesive tape 30 is called a dicing tape, and is a tape for protecting and fixing the wafer 21 in the dicing step (F) and holding it until the pickup step (H).
- the adhesive tape 30 is not particularly limited, and a known one can be used.
- the pressure-sensitive adhesive tape 30 includes a pressure-sensitive adhesive layer 31 and a base film layer 32.
- the pressure-sensitive adhesive layer 31 include polyethylene-based, acrylic-based, rubber-based, and urethane-based pressure-sensitive adhesives.
- the base film layer 32 a plastic base film made of polyethylene terephthalate, polyethylene, polypropylene, polyester, or a porous base material made of paper, cloth, nonwoven fabric, or the like can be used.
- it does not specifically limit as an adhesive tape sticking apparatus and conditions A well-known apparatus and conditions can be used.
- FIG. 5 is a cross-sectional view schematically showing the protective tape peeling step.
- the protective tape peeling step the protective tape 10 is peeled off leaving the adhesive layer 11 and the other layers are removed. That is, the first thermoplastic resin layer 12, the second thermoplastic resin layer 13, and the base film layer 14 are removed, and only the adhesive layer 11 remains on the wafer 21.
- FIG. 6 is a cross-sectional view schematically showing the curing process.
- the adhesive layer 11 is cured.
- a curing method and curing conditions a known method for curing a thermosetting adhesive can be used.
- the curing conditions are preferably 100 to 200 ° C. for 1 hour or longer.
- FIG. 7 is a cross-sectional view schematically showing the dicing process.
- the wafer 21 to which the adhesive tape 30 is attached is diced to obtain individual semiconductor chips.
- the dicing method is not particularly limited, and a known method such as cutting the wafer 21 with a dicing saw can be used.
- FIG. 8 is a cross-sectional view showing an outline of the expanding process.
- the adhesive tape 30 to which a plurality of divided semiconductor chips are attached is elongated in the horizontal direction to widen the intervals between the individual semiconductor chips.
- FIG. 9 is a cross-sectional view schematically showing the pickup process.
- the semiconductor chip adhered and fixed on the adhesive tape 30 is pushed up from the lower surface of the adhesive tape 30 to be peeled off, and the peeled semiconductor chip is adsorbed by a collet.
- the picked-up semiconductor chip is stored in a chip tray or conveyed to a chip mounting nozzle of a flip chip bonder.
- FIG. 10 is a cross-sectional view schematically showing the mounting process.
- the semiconductor chip and the circuit board are connected using a circuit connection material such as NCF (Non Conductive Film).
- NCF Non Conductive Film
- plastic substrates such as a polyimide substrate and a glass epoxy substrate, a ceramic substrate, etc. can be used.
- connection method the well-known method using a heating bonder, a reflow furnace, etc. can be used.
- solderability can be improved, and the amount of warpage of the wafer after back grinding can be reduced.
- the adhesive layer on the wafer surface on which the bumps are formed before the dicing treatment process is cured and the bumps are reinforced, damage to the bumps can be reduced in subsequent processes such as dicing, pickup, and mounting.
- a semiconductor device having excellent connection reliability can be obtained with a high yield.
- a semiconductor device obtained by a method for manufacturing a semiconductor device includes a semiconductor chip having a bump and an adhesive layer formed on the bump forming surface, and a circuit board having an electrode facing the bump, and the bump forming surface of the semiconductor chip Since the adhesive layer 11 is formed, excellent connection reliability can be obtained.
- a protective tape was prepared by laminating an adhesive layer, a first thermoplastic resin layer, a second thermoplastic resin layer, and a base film layer.
- protective tape protective tape application process (A), grinding process (B), adhesive tape application process (C), protective tape peeling process (D), curing process (E), and dicing process (F), the expanding process (G), the pick-up process (H), and the mounting process (I) were sequentially performed to manufacture a semiconductor device. Then, the solderability of the semiconductor device and the amount of wafer warpage were evaluated.
- the present invention is not limited to these examples.
- the storage shear modulus at 60 ° C. of the adhesive layer and the thermoplastic resin layer was calculated using a viscoelasticity measuring device.
- the measurement conditions were set to a measurement temperature range of 0 to 120 ° C., a heating rate of 5 ° C./min, a frequency of 1 Hz, and a strain of 0.1%.
- thermoplastic resin layer (film 1) A first thermoplastic resin layer (any one of the following thermoplastic resin layers A1 to A3) and / or a second thermoplastic resin layer (the following thermoplastic resin layers B1 to The thermoplastic resin was extruded and melt-molded so that any of B3) was formed in this order.
- Thermoplastic resin layer A1 ethylene / vinyl acetate copolymer (VF120T, manufactured by Ube Maruzen Polyethylene Co., Ltd.), storage shear modulus at 60 ° C .: 3.1E + 06 Pa
- Thermoplastic resin layer A2 (0540F, manufactured by Ube Maruzen Polyethylene Co., Ltd.), storage shear modulus at 60 ° C .: 7.1E + 06 Pa
- Thermoplastic resin layer A3 ethylene / vinyl acetate copolymer (V319, manufactured by Ube Maruzen Polyethylene Co., Ltd.), storage shear modulus at 60 ° C .: 1.1E + 06 Pa
- Thermoplastic resin layer B1 ethylene / vinyl acetate copolymer (EV40LX, Mitsui / DuPont Polychemical Co., Ltd.), storage shear modulus at 60 ° C .: 4.9E + 05 Pa
- Thermoplastic resin layer B2 ethylene / vinyl acetate copolymer (EV45LX, Mitsui / DuPont Polychemical Co., Ltd.), storage shear modulus at 60 ° C .: 4.2E + 04 Pa
- Thermoplastic resin layer B3 ethylene / vinyl acetate copolymer (EV170, manufactured by Mitsui DuPont Polychemical Co., Ltd.), storage shear modulus at 60 ° C .: 6.2E + 05 Pa
- Adhesive layer No. 1 is an adhesive composition prepared by blending 13.0 parts by mass of a film-forming resin, 54.8 parts by mass of an epoxy resin, 32.4 parts by mass of a curing agent, and 0.3 parts by mass of a curing aid. Then, this was applied to PET (Polyethylene terephthalate) peel-treated so as to have a thickness after drying of 30 ⁇ m using a bar coater and dried in an oven. Adhesive layer No. The storage shear modulus of 1 at 60 ° C. was 3.3E + 03 Pa.
- Adhesive layer No. 2 comprises 13.0 parts by mass of film-forming resin, 54.8 parts by mass of epoxy resin, 32.4 parts by mass of curing agent, 0.3 part by mass of curing aid, and 25.0 parts by mass of filler. Then, an adhesive composition was prepared, and this was prepared by applying it to PET, which was peel-treated so that the thickness after drying was 30 ⁇ m, using a bar coater and drying it in an oven. Adhesive layer No. The storage shear modulus of 2 at 60 ° C. was 3.6E + 04 Pa.
- Adhesive layer No. 3 is an adhesive composition prepared by blending 2.0 parts by weight of a film-forming resin, 54.8 parts by weight of an epoxy resin, 32.4 parts by weight of a curing agent, and 0.3 parts by weight of a curing aid. Then, this was applied to PET that had been subjected to a peeling treatment so that the thickness after drying was 30 ⁇ m using a bar coater, and dried in an oven. Adhesive layer No. The storage shear modulus of No. 3 at 60 ° C. was 3.6E + 01 Pa.
- Phenoxy resin Phenoxy resin (PKHH, manufactured by Union Carbide Corp.)
- Epoxy resin dicyclopentadiene type epoxy resin (HP7200H, manufactured by DIC Corporation)
- Curing agent Novolac type phenolic resin (TD-2093, manufactured by DIC Corporation)
- Curing aid 2-ethyl-4-methylimidazole (2E4MZ)
- Filler Silica (Aerosil RY200, manufactured by Nippon Aerosil Co., Ltd.)
- thermoplastic resin layer (film 1) and the said adhesive bond layer (film 2) were laminated, and the protective tape was produced.
- film 1 a film composed of a PET base material (75 ⁇ m), a thermoplastic resin layer A1 (50 ⁇ m), and a thermoplastic resin layer B1 (450 ⁇ m) was used.
- adhesive layer No. 1 (20 ⁇ m) was used.
- the film 1 is composed of a PET base material (75 ⁇ m), a thermoplastic resin layer A2 (50 ⁇ m), and a thermoplastic resin layer B1 (450 ⁇ m).
- a protective tape was produced in the same manner as in Example 1 except that 2 (20 ⁇ m) was used.
- the film 1 is composed of a PET substrate (75 ⁇ m), a thermoplastic resin layer A3 (50 ⁇ m), and a thermoplastic resin layer B1 (450 ⁇ m).
- a protective tape was produced in the same manner as in Example 1 except that 3 (20 ⁇ m) was used.
- the film 1 is composed of a PET base material (75 ⁇ m), a thermoplastic resin layer A1 (50 ⁇ m), and a thermoplastic resin layer B2 (450 ⁇ m).
- a protective tape was produced in the same manner as in Example 1 except that 1 (20 ⁇ m) was used.
- the film 1 is composed of a PET substrate (75 ⁇ m), a thermoplastic resin layer A1 (50 ⁇ m), and a thermoplastic resin layer B3 (450 ⁇ m).
- a protective tape was produced in the same manner as in Example 1 except that 1 (20 ⁇ m) was used.
- the film 1 is composed of a PET substrate (75 ⁇ m), a thermoplastic resin layer A1 (20 ⁇ m), and a thermoplastic resin layer B1 (450 ⁇ m).
- a protective tape was produced in the same manner as in Example 1 except that 1 (20 ⁇ m) was used.
- the film 1 is composed of a PET base material (75 ⁇ m), a thermoplastic resin layer A1 (200 ⁇ m), and a thermoplastic resin layer B1 (450 ⁇ m).
- a protective tape was produced in the same manner as in Example 1 except that 1 (20 ⁇ m) was used.
- the film 1 is composed of a PET substrate (75 ⁇ m), a thermoplastic resin layer A1 (50 ⁇ m), and a thermoplastic resin layer B1 (300 ⁇ m).
- a protective tape was produced in the same manner as in Example 1 except that 1 (20 ⁇ m) was used.
- the film 1 is composed of a PET base material (75 ⁇ m), a thermoplastic resin layer A1 (50 ⁇ m), and a thermoplastic resin layer B1 (600 ⁇ m).
- a protective tape was produced in the same manner as in Example 1 except that 1 (20 ⁇ m) was used.
- the film 1 is composed of a PET substrate (50 ⁇ m), a thermoplastic resin layer A1 (50 ⁇ m), and a thermoplastic resin layer B1 (450 ⁇ m).
- a protective tape was produced in the same manner as in Example 1 except that 1 (20 ⁇ m) was used.
- the film 1 is composed of a PET substrate (100 ⁇ m), a thermoplastic resin layer A1 (50 ⁇ m), and a thermoplastic resin layer B1 (450 ⁇ m).
- a protective tape was produced in the same manner as in Example 1 except that 1 (20 ⁇ m) was used.
- the film 1 is composed of a PET base material (75 ⁇ m), a thermoplastic resin layer A1 (5 ⁇ m), and a thermoplastic resin layer B1 (495 ⁇ m).
- a protective tape was produced in the same manner as in Example 1 except that 1 (20 ⁇ m) was used.
- the film 1 is composed of a PET base material (75 ⁇ m), a thermoplastic resin layer A1 (50 ⁇ m), and a thermoplastic resin layer B1 (450 ⁇ m).
- a protective tape was produced in the same manner as in Example 1 except that 2 (20 ⁇ m) was used.
- the film 1 is composed of a PET base material (75 ⁇ m), a thermoplastic resin layer A1 (250 ⁇ m), and a thermoplastic resin layer B1 (450 ⁇ m).
- a protective tape was produced in the same manner as in Example 1 except that 1 (20 ⁇ m) was used.
- the film 1 is made of a PET base material (75 ⁇ m) and a thermoplastic resin layer B1 (500 ⁇ m).
- a protective tape was produced in the same manner as in Example 1 except that 1 (20 ⁇ m) was used.
- the film 1 is composed of a PET base material (75 ⁇ m) and a thermoplastic resin layer A1 (500 ⁇ m).
- a protective tape was produced in the same manner as in Example 1 except that 1 (20 ⁇ m) was used.
- a back grind process was performed to a thickness of the wafer to 300 ⁇ m with a grinder (product name: DFG8560, manufactured by DISCO Corporation). Thereafter, the protective tape was peeled off leaving the adhesive layer, the other layers (PET base material and thermoplastic resin layer) were removed, and the adhesive layer on the wafer was cured in an oven at 130 ° C. for 2 hours. Then, the wafer was diced and separated into chips, and then mounted on a substrate (a gold electrode with flux) by a mounter, and the chip and the substrate were soldered in a reflow furnace at a maximum of 260 ° C.
- a grinder product name: DFG8560, manufactured by DISCO Corporation
- an adhesive layer (adhesive layers No. 1 to No. 3), a first thermoplastic resin layer (thermoplastic resin layers A1 to A3), and a second thermoplastic resin
- a protective tape having layers (thermoplastic resin layers B1 to B3) and a base film layer (PET base material) in this order and satisfying the conditions of the above formulas (1) to (3) is used, solder It was found that the bondability was good and the amount of warpage of the wafer was small.
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Abstract
Description
(1)Ga>Gb
(2)Ta<Tb
(3)(Ga×Ta+Gb×Tb)/(Ta+Tb)≦1.4E+06Pa
(式(1)中、Gaは保護テープを貼付する貼付温度における第1の熱可塑性樹脂層の貯蔵剪断弾性率であり、Gbは保護テープを貼付する貼付温度における第2の熱可塑性樹脂層の貯蔵剪断弾性率である。式(2)中、Taは第1の熱可塑性樹脂層の厚みであり、Tbは第2の熱可塑性樹脂層の厚みである。式(3)中、Ga及びGbは式(1)中のGa及びGbと同義であり、Ta及びTbは式(2)中のTa及びTbと同義である。)
1.保護テープ
2.半導体装置の製造方法
3.実施例
本実施の形態に係る保護テープは、接着剤層と、第1の熱可塑性樹脂層と、第2の熱可塑性樹脂層と、基材フィルム層とをこの順に有し、下記式(1)~(3)の条件を満たす。
(1)Ga>Gb
(2)Ta<Tb
(3)(Ga×Ta+Gb×Tb)/(Ta+Tb)≦1.4E+06Pa
(式(1)中、Gaは保護テープを貼付する貼付温度における第1の熱可塑性樹脂層の貯蔵剪断弾性率であり、Gbは保護テープを貼付する貼付温度における第2の熱可塑性樹脂層の貯蔵剪断弾性率である。式(2)中、Taは第1の熱可塑性樹脂層の厚みであり、Tbは第2の熱可塑性樹脂層の厚みである。式(3)中、Ga及びGbは式(1)中のGa及びGbと同義であり、Ta及びTbは式(2)中のTa及びTbと同義である。)
(1A)Ga>Gb>Gn
(式(1A)中、Gnは保護テープを貼付する貼付温度における接着剤層の貯蔵剪断弾性率であり、Ga及びGbは式(1)中のGa及びGbと同義である。)
(2A)Tn<Ta<Tb
(式(2A)中、Tnは接着剤層の厚みであり、Ta及びTbは式(2)中のTa及びTbと同義である。)
(4)Gn/Ga≦0.01
接着剤層11の60℃での貯蔵剪断弾性率(Gn)は、1.0E+01Pa~5.0E+04Paであることが好ましく、1.0E+02Pa~3.5E+03Paであることがより好ましい。接着剤層11の貯蔵剪断弾性率を1.0E+01Pa以上とすることにより、バンプが接着剤を貫通する間に接着剤層11付着してバンプ先端を接着剤層が覆ってしまうことを抑制することができる。また、保護テープ10をウエハに貼り付けた際に接着剤層11の樹脂が流れてしまうことを抑制することができる。接着剤層11の貯蔵剪断弾性率を5.0E+04Pa以下とすることにより、バンプが接着剤層11をより容易に貫通することができ、導通をより良好にすることができる。
第1の熱可塑性樹脂層12は、例えば、エチレン酢酸ビニル共重合体(EVA:Ethylene Vinyl Acetate)、ポリエチレン、ポリプロピレン、ポリアミド、ポリアセタール、ポリエチレンテレフタレート、ポリブチレンテレフタレート、フッ素樹脂、ポリフェニレンサルファイド、ポリスチレン、ABS樹脂、アクリル系樹脂、ポリカーボネート、ポリウレタン、ポリ塩化ビニル、ポリフェニレンオキサイドなどの樹脂からなる層である。上記樹脂は、1種単独で使用してもよいし、2種以上を併用してもよい。
第2の熱可塑性樹脂層13は、第1の熱可塑性樹脂層12と同様の樹脂からなる層である。第2の熱可塑性樹脂層を構成する樹脂は、1種単独で使用してもよいし、2種以上を併用してもよい。
基材フィルム層14としては、ポリエチレンテレフタレート、ポリエチレン、ポリプロピレン、ポリエステルなどのプラスチックフィルムや、紙、布、不織布等からなる多孔質基材を用いることができる。
(1A)Gc>Ga>Gb
(2A)Tc<Ta<Tb
(式(1A)中、Gcは、保護テープを貼付する貼付温度における第3の熱可塑性樹脂層の貯蔵剪断弾性率であり、Ga及びGbは式(1)中のGa及びGbと同義である。式(2A)中、Tcは第3の熱可塑性樹脂層の厚さであり、Ta及びTbは式(2)中のTa及びTbと同義である。)
次に、上述した保護テープを用いた半導体装置の製造方法について説明する。本実施の形態に係る半導体装置の製造方法は、バンプが形成されたウエハ面に接着剤層を有する保護テープを貼付する保護テープ貼付工程と、保護テープ貼付面の反対面をグラインド処理するグラインド処理工程と、接着剤層を残して保護テープを剥離し、他の層を除去する保護テープ剥離工程とを有し、保護テープが、上述した保護テープである。
図2は、保護テープ貼付工程の概略を示す断面図である。保護テープ貼付工程では、バンプ22が形成されたウエハ21面に保護テープ10を貼り付ける。保護テープ10を貼り付ける貼付温度は、ボイドの減少、ウエハ密着性の向上およびウエハ研削後のウエハの反り防止の観点から、25℃~100℃が好ましく、40℃~80℃がより好ましい。
図3は、グラインド工程の概略を示す断面図である。グラインド工程では、保護テープ10を貼り付けたウエハ21の反対面、すなわち、バンプ22が形成されている面とは反対面を研削装置に固定して研磨する。研磨は通常、ウエハ21の厚みが50~600μmになるまで行うが、本実施の形態では、接着剤層11によりバンプ22が補強されるため、50μm以下の厚さまで研磨してもよい。
図4は、粘着テープ貼付工程の概略を示す断面図である。粘着テープ貼付工程では、グラインド処理面に粘着テープ30を貼付する。粘着テープ30は、ダイシングテープ(Dicing Tape)と呼ばれるものであり、ダイシング工程(F)において、ウエハ21を保護、固定し、ピックアップ工程(H)まで保持するためのテープである。
図5は、保護テープ剥離工程の概略を示す断面図である。保護テープ剥離工程では、接着剤層11を残して保護テープ10を剥離し、他の層を除去する。すなわち、第1の熱可塑性樹脂層12、第2の熱可塑性樹脂層13及び基材フィルム層14が除去され、ウエハ21上には接着剤層11のみが残る。
図6は、硬化工程の概略を示す断面図である。硬化工程では、接着剤層11を硬化させる。硬化方法及び硬化条件としては、熱硬化型の接着剤を硬化させる公知の方法を用いることができる。例えば、硬化条件は、100~200℃で1時間以上が好ましい。
図7は、ダイシング処理工程の概略を示す断面図である。ダイシング処理工程では、粘着テープ30が貼付されたウエハ21をダイシング処理し、個片の半導体チップを得る。ダイシング方法としては、特に限定されず、例えばダイシングソーでウエハ21を切削して切り出すなどの公知の方法を用いることができる。
図8は、エキスパンド工程の概略を示す断面図である。エキスパンド工程では、例えば分割された複数個の半導体チップが貼着されている粘着テープ30を水平方向に伸長させ、個々の半導体チップの間隔を広げる。
図9は、ピックアップ工程の概略を示す断面図である。ピックアップ工程では、粘着テープ30上に貼着固定された半導体チップを、粘着テープ30の下面より突き上げて剥離させ、この剥離された半導体チップをコレットで吸着する。ピックアップされた半導体チップは、チップトレイに収納されるか、またはフリップチップボンダーのチップ搭載ノズルへと搬送される。
図10は、実装工程の概略を示す断面図である。実装工程では、例えば半導体チップと回路基板とをNCF(Non Conductive Film)などの回路接続材料を用いて接続する。回路基板としては、特に限定されないが、ポリイミド基板、ガラスエポキシ基板などのプラスチック基板、セラミック基板などを用いることができる。また、接続方法としては、加熱ボンダー、リフロー炉などを用いる公知の方法を用いることができる。
接着剤層及び熱可塑性樹脂層の60℃における貯蔵剪断弾性率は、粘弾性測定装置を用いて算出した。測定条件は、測定温度域0~120℃、昇温速度5℃/分、振動数1Hz、歪み0.1%に設定した。
<熱可塑性樹脂層(フィルム1)の作製>
PET基材(厚み75μm)上に、第1の熱可塑性樹脂層(下記熱可塑性樹脂層A1~A3のいずれか)、及び/又は、第2の熱可塑性樹脂層(下記熱可塑性樹脂層B1~B3のいずれか)がこの順に形成されるように、熱可塑性樹脂を押し出し溶融成型した。
熱可塑性樹脂層A1:エチレン・酢酸ビニル共重合体(VF120T、宇部丸善ポリエチレン(株)社製)、60℃での貯蔵剪断弾性率:3.1E+06Pa
熱可塑性樹脂層A2:(0540F、宇部丸善ポリエチレン(株)社製)、60℃での貯蔵剪断弾性率:7.1E+06Pa
熱可塑性樹脂層A3:エチレン・酢酸ビニル共重合体(V319、宇部丸善ポリエチレン(株)社製)、60℃での貯蔵剪断弾性率:1.1E+06Pa
熱可塑性樹脂層B1:エチレン・酢酸ビニル共重合体(EV40LX、三井・デュポンポリケミカル(株)社製)、60℃での貯蔵剪断弾性率:4.9E+05Pa
熱可塑性樹脂層B2:エチレン・酢酸ビニル共重合体(EV45LX、三井・デュポンポリケミカル(株)社製)、60℃での貯蔵剪断弾性率:4.2E+04Pa
熱可塑性樹脂層B3:エチレン・酢酸ビニル共重合体(EV170、三井・デュポンポリケミカル(株)社製)、60℃での貯蔵剪断弾性率:6.2E+05Pa
表1に示すように、接着剤層No.1~No.3を作製した。接着剤層No.1は、膜形成樹脂13.0質量部と、エポキシ樹脂54.8質量部と、硬化剤32.4質量部と、硬化助剤0.3質量部とを配合して接着剤組成物を調製し、これを、乾燥後の厚みが30μmとなるように剥離処理されたPET(Polyethylene terephthalate)にバーコーターを用いて塗布し、オーブンで乾燥させて作製した。接着剤層No.1の60℃での貯蔵剪断弾性率は、3.3E+03Paであった。
エポキシ樹脂:ジシクロペンタジエン型エポキシ樹脂(HP7200H、DIC(株)社製)
硬化剤:ノボラック型フェノール樹脂(TD-2093、DIC(株)社製)
硬化助剤:2-エチル-4-メチルイミダゾール(2E4MZ)
フィラー:シリカ(アエロジルRY200、日本アエロジル(株)社製)
上記熱可塑性樹脂層(フィルム1)と、上記接着剤層(フィルム2)とをラミネートし、保護テープを作製した。フィルム1としては、PET基材(75μm)と熱可塑性樹脂層A1(50μm)と熱可塑性樹脂層B1(450μm)とからなるものを用いた。フィルム2としては、接着剤層No.1(20μm)を用いた。
フィルム1として、PET基材(75μm)と熱可塑性樹脂層A2(50μm)と熱可塑性樹脂層B1(450μm)とからなるものを用い、フィルム2として、接着剤層No.2(20μm)を用いたこと以外は、実施例1と同様に保護テープを作製した。
フィルム1として、PET基材(75μm)と熱可塑性樹脂層A3(50μm)と熱可塑性樹脂層B1(450μm)とからなるものを用い、フィルム2として、接着剤層No.3(20μm)を用いたこと以外は、実施例1と同様に保護テープを作製した。
フィルム1として、PET基材(75μm)と熱可塑性樹脂層A1(50μm)と熱可塑性樹脂層B2(450μm)とからなるものを用い、フィルム2として、接着剤層No.1(20μm)を用いたこと以外は、実施例1と同様に保護テープを作製した。
フィルム1として、PET基材(75μm)と熱可塑性樹脂層A1(50μm)と熱可塑性樹脂層B3(450μm)とからなるものを用い、フィルム2として、接着剤層No.1(20μm)を用いたこと以外は、実施例1と同様に保護テープを作製した。
フィルム1として、PET基材(75μm)と熱可塑性樹脂層A1(20μm)と熱可塑性樹脂層B1(450μm)とからなるものを用い、フィルム2として、接着剤層No.1(20μm)を用いたこと以外は、実施例1と同様に保護テープを作製した。
フィルム1として、PET基材(75μm)と熱可塑性樹脂層A1(200μm)と熱可塑性樹脂層B1(450μm)とからなるものを用い、フィルム2として、接着剤層No.1(20μm)を用いたこと以外は、実施例1と同様に保護テープを作製した。
フィルム1として、PET基材(75μm)と熱可塑性樹脂層A1(50μm)と熱可塑性樹脂層B1(300μm)とからなるものを用い、フィルム2として、接着剤層No.1(20μm)を用いたこと以外は、実施例1と同様に保護テープを作製した。
フィルム1として、PET基材(75μm)と熱可塑性樹脂層A1(50μm)と熱可塑性樹脂層B1(600μm)とからなるものを用い、フィルム2として、接着剤層No.1(20μm)を用いたこと以外は、実施例1と同様に保護テープを作製した。
フィルム1として、PET基材(50μm)と熱可塑性樹脂層A1(50μm)と熱可塑性樹脂層B1(450μm)とからなるものを用い、フィルム2として、接着剤層No.1(20μm)を用いたこと以外は、実施例1と同様に保護テープを作製した。
フィルム1として、PET基材(100μm)と熱可塑性樹脂層A1(50μm)と熱可塑性樹脂層B1(450μm)とからなるものを用い、フィルム2として、接着剤層No.1(20μm)を用いたこと以外は、実施例1と同様に保護テープを作製した。
フィルム1として、PET基材(75μm)と熱可塑性樹脂層A1(5μm)と熱可塑性樹脂層B1(495μm)とからなるものを用い、フィルム2として、接着剤層No.1(20μm)を用いたこと以外は、実施例1と同様に保護テープを作製した。
フィルム1として、PET基材(75μm)と熱可塑性樹脂層A1(50μm)と熱可塑性樹脂層B1(450μm)とからなるものを用い、フィルム2として、接着剤層No.2(20μm)を用いたこと以外は、実施例1と同様に保護テープを作製した。
フィルム1として、PET基材(75μm)と熱可塑性樹脂層A1(250μm)と熱可塑性樹脂層B1(450μm)とからなるものを用い、フィルム2として、接着剤層No.1(20μm)を用いたこと以外は、実施例1と同様に保護テープを作製した。
フィルム1として、PET基材(75μm)と熱可塑性樹脂層B1(500μm)とからなるものを用い、フィルム2として、接着剤層No.1(20μm)を用いたこと以外は、実施例1と同様に保護テープを作製した。
フィルム1として、PET基材(75μm)と熱可塑性樹脂層A1(500μm)とからなるものを用い、フィルム2として、接着剤層No.1(20μm)を用いたこと以外は、実施例1と同様に保護テープを作製した。
保護テープの接着剤層面を、はんだバンプ(φ=250μm、H=200μm、ピッチ=250μm)が形成されたウエハ(サイズ:5cm×5cm×700μmt)に貼り付け、真空式ラミネータを用いて60℃の温度でラミネートした。
基板の金電極上にフラックスを塗布し、最大260℃のリフロー温度ではんだ接合した際に、バンプサイズの面積を100%として、はんだが濡れ広がった面積を計測した。はんだが濡れ広がった面積が、バンプサイズの面積に対して40%以上の場合をはんだ接合性が良好と評価し、40%未満の場合をはんだ接合性が良好でないと評価した。実施例及び比較例の結果を下記表2及び表3に示す。
保護テープの接着剤層面を、8インチのウエハ(厚み725μm)に貼り合わせ、ウエハ厚みを300μmまでバックグラインド処理した際のウエハの反り量を測定した。反り量が5mm以下の場合をウエハの反り量が小さいと評価し、5mmを超える場合をウエハの反り量が大きいと評価した。実施例及び比較例の結果を下記表2及び表3に示す。
Claims (10)
- 接着剤層と、第1の熱可塑性樹脂層と、第2の熱可塑性樹脂層と、基材フィルム層とをこの順に有し、
下記式(1)~(3)の条件を満たす、保護テープ。
(1)Ga>Gb
(2)Ta<Tb
(3)(Ga×Ta+Gb×Tb)/(Ta+Tb)≦1.4E+06Pa
(式(1)中、Gaは当該保護テープを貼付する貼付温度における第1の熱可塑性樹脂層の貯蔵剪断弾性率であり、Gbは当該保護テープを貼付する貼付温度における第2の熱可塑性樹脂層の貯蔵剪断弾性率である。式(2)中、Taは第1の熱可塑性樹脂層の厚みであり、Tbは第2の熱可塑性樹脂層の厚みである。式(3)中、Ga及びGbは式(1)中のGa及びGbと同義であり、Ta及びTbは式(2)中のTa及びTbと同義である。) - 下記式(4)の条件をさらに満たす、請求項1記載の保護テープ。
(4)Gn/Ga≦0.01
(式(4)中、Gnは当該保護テープを貼付する貼付温度における上記接着剤層の貯蔵剪断弾性率であり、Gaは上記式(1)中のGaと同義である。) - 上記貼付温度が、40~80℃である請求項1記載の保護テープ。
- 上記第1の熱可塑性樹脂層の60℃での貯蔵剪断弾性率が、1.0E+06Pa~1.0E+09Paであり、
上記第2の熱可塑性樹脂層の60℃での貯蔵剪断弾性率が、1.0E+04Pa~2.0E+06Paである請求項1乃至3のいずれか1項に記載の保護テープ。 - 上記接着剤層の60℃での貯蔵剪断弾性率が、1.0E+01Pa~5.0E+04Paである請求項1乃至4のいずれか1項に記載の保護テープ。
- バンプが形成されたウエハ面に上記接着剤層が貼付されるものであり、
上記接着剤層の厚さと、上記第1の熱可塑性樹脂層の厚さと、上記第2の熱可塑性樹脂層の厚さとの合計が、上記バンプの高さ以上である、請求項1乃至5のいずれか1項に記載の保護テープ。 - 上記接着剤層の厚みが、上記バンプの高さの10~80%である請求項6記載の保護テープ。
- バンプが形成されたウエハ面に接着剤層を有する保護テープを貼付する保護テープ貼付工程と、
上記保護テープを貼付けたウエハの反対面をグラインド処理するグラインド処理工程と、
上記接着剤層を残して上記保護テープを剥離し、他の層を除去する保護テープ剥離工程とを有し、
上記保護テープが、接着剤層と、第1の熱可塑性樹脂層と、第2の熱可塑性樹脂層と、基材フィルム層とをこの順に有し、下記式(1)~(3)の条件を満たす、半導体装置の製造方法。
(1)Ga>Gb
(2)Ta<Tb
(3)(Ga×Ta+Gb×Tb)/(Ta+Tb)≦1.4E+06Pa
(式(1)中、Gaは上記保護テープを貼付する貼付温度における第1の熱可塑性樹脂層の貯蔵剪断弾性率であり、Gbは上記保護テープを貼付する貼付温度における第2の熱可塑性樹脂層の貯蔵剪断弾性率である。式(2)中、Taは第1の熱可塑性樹脂層の厚みであり、Tbは第2の熱可塑性樹脂層の厚みである。式(3)中、Ga及びGbは式(1)中のGa及びGbと同義であり、Ta及びTbは式(2)中のTa及びTbと同義である。) - グラインド処理面に粘着テープを貼付する粘着テープ貼付工程と、
上記粘着テープが貼付されたウエハをダイシング処理し、個片の半導体チップを得るダイシング処理工程と、
上記接着剤層を硬化させる硬化工程とを有し、
上記硬化工程が、上記ダイシング処理工程前に行われる請求項8記載の半導体装置の製造方法。 - 請求項8又は9記載の半導体装置の製造方法によって得られる半導体装置。
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