WO2016190539A1 - Oscillateur à quartz et son procédé de production - Google Patents

Oscillateur à quartz et son procédé de production Download PDF

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Publication number
WO2016190539A1
WO2016190539A1 PCT/KR2016/003743 KR2016003743W WO2016190539A1 WO 2016190539 A1 WO2016190539 A1 WO 2016190539A1 KR 2016003743 W KR2016003743 W KR 2016003743W WO 2016190539 A1 WO2016190539 A1 WO 2016190539A1
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WO
WIPO (PCT)
Prior art keywords
metal material
resin material
crystal oscillator
coating layer
filler
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PCT/KR2016/003743
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English (en)
Korean (ko)
Inventor
윤금영
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(주)파트론
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Publication of WO2016190539A1 publication Critical patent/WO2016190539A1/fr

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/19—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator consisting of quartz
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
    • H10N30/076—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by vapour phase deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/09—Forming piezoelectric or electrostrictive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/09—Forming piezoelectric or electrostrictive materials
    • H10N30/092—Forming composite materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/09—Forming piezoelectric or electrostrictive materials
    • H10N30/093—Forming inorganic materials
    • H10N30/095—Forming inorganic materials by melting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials

Definitions

  • the present invention relates to a crystal oscillator and a method of manufacturing the same, and more particularly, to a crystal oscillator which can be used as a frequency oscillator mounted on an electronic device.
  • the crystal oscillator vibrates the crystal piece due to the piezoelectric phenomenon of the crystal piece when an external voltage is applied, and generates a stable frequency signal by the vibration.
  • Crystal oscillators are used as oscillators in various electronic devices such as computers and communication devices.
  • the crystal oscillator is accommodated inside the package, the crystal piece is electrically connected to the electrode formed in the package.
  • the crystal piece and the electrode are usually connected by a conductive epoxy resin material.
  • the size of the crystal oscillator is also miniaturized.
  • the size of the crystal piece and the electrode was also reduced. This can cause a problem that the conductive resin material is in contact with the crystal piece and the electrode, respectively, and degrades electrical connectivity.
  • a peeling phenomenon may occur between the crystal piece and the conductive resin material, thereby causing a problem in that the electrical connection is broken.
  • the problem to be solved by the present invention is to provide a crystal oscillator and a method of manufacturing the same that can ensure the electrical connection between the crystal piece and the conductive resin material even in a miniaturized crystal oscillator.
  • Another object of the present invention is to provide a crystal oscillator having high reliability for electrical connection between the crystal piece and the package electrode even when a temperature change or an impact is applied, and a manufacturing method thereof.
  • Another object of the present invention is to provide a crystal oscillator and a method of manufacturing the same, which can ensure electrical connection between the crystal piece and the package electrode even when the crystal oscillator is coupled to the electronic device in a surface mount manner.
  • the crystal oscillator of the present invention and a method for manufacturing the same for solving the above problems, providing a base structure with an electrode, providing a crystal piece with a terminal, at least one of the electrode of the base structure and the terminal of the crystal piece Forming a coating layer of a first metal on the surface, applying a liquid resin material having an evenly distributed filler of a second metal on the surface of the electrode of the base structure, and bonding the crystal piece to the resin material And heat-treating the resin material at a temperature higher than the melting point of the first metal material and higher than the melting point of the second metal material, and coupling an cover to the base structure to form an inner space in which the crystal piece is accommodated. Steps.
  • the first metal material may include at least one of tin, lead, zinc, bismuth, and cadmium
  • the second metal material may include at least one of gold, silver, copper, and aluminum. Can be.
  • the coating layer may be melted in the heat treatment step to be diffused between the terminal of the crystal piece and the resin material.
  • the coating layer is melted in the heat treatment step may be diffused between the terminal of the base structure and the resin material.
  • the coating layer may be melted in the heat treatment step to be diffused into the resin material.
  • the resin material between the electrode of the base structure and the terminal of the crystal piece, the electrical conductivity may be improved by 10% or more after the heat treatment step is performed.
  • the resin material may be evenly distributed with the filler of the first metal material in addition to the filler of the second metal material.
  • the filler of the first metal material is melted in the heat treatment step, it may be electrically connected to the coating layer.
  • the filler of the first metal material may be melted in the heat treatment step, and may be diffused between the fillers of the second metal material.
  • the melting point of the first metal material may be lower than the melting point of the second metal material and the heat resistance temperature of the resin material.
  • the step of forming the coating layer may be to adhere to the surface by discharging the particles of the first metal material by the sputtering method.
  • the package structure including an electrode that is formed in the inner space, and exposed to the inner space, the crystal is formed, the crystal piece located inside the package structure, the package structure A coating layer of a first metal material and an adhesive resin material bonded to at least one of the terminals of the electrode and the crystal piece, and a filler of a second metal material evenly distributed on the adhesive resin material, the electrode of the package structure and the crystal Conductive resin material for electrically connecting the convenience terminal, wherein the melting point of the first metal material is lower than the melting point of the second metal material.
  • the first metal material may include at least one of tin, lead, zinc, bismuth, and cadmium
  • the second metal material may include at least one of gold, silver, copper, and aluminum. Can be.
  • the coating layer may be formed to be diffused between the terminal of the crystal piece and the resin material.
  • the coating layer may be formed to be diffused between the electrode of the package structure and the resin material.
  • the coating layer may be formed to be diffused into the resin material.
  • the resin material may be evenly distributed with the filler of the first metal material in addition to the filler of the second metal material.
  • the coating layer may be electrically connected to the filler of the first metal material.
  • the filler of the first metal material may be formed to be diffused between the filler of the second metal material.
  • the melting point of the first metal material may be lower than the melting point of the second metal material and the heat resistance temperature of the resin material.
  • the crystal oscillator and its manufacturing method according to an embodiment of the present invention can ensure the electrical connection between the crystal piece and the conductive resin material even in the miniaturized crystal oscillator.
  • the crystal oscillator and its manufacturing method according to an embodiment of the present invention has a high reliability of the electrical connection between the crystal piece and the package electrode even when a temperature change or impact is applied.
  • the crystal oscillator and the method of manufacturing the same can ensure the electrical connection between the crystal piece and the package electrode even when the crystal oscillator is coupled to the electronic device in a surface mount manner.
  • FIG. 1 is a flowchart illustrating a method of manufacturing a crystal oscillator according to an embodiment of the present invention.
  • FIG. 2 is a cross-sectional view for explaining a step of providing a base structure and the step of providing a correction piece of the crystal oscillator manufacturing method according to an embodiment of the present invention.
  • FIG 3 is a cross-sectional view for explaining a step of forming a coating layer of the crystal oscillator manufacturing method according to an embodiment of the present invention.
  • 4A and 4B are cross-sectional views illustrating a step of applying a resin material in a method of manufacturing a crystal oscillator according to an embodiment of the present invention.
  • FIG. 5 is a cross-sectional view for explaining the step of coupling the crystal piece of the manufacturing method of the crystal oscillator according to an embodiment of the present invention.
  • 6A and 6B are cross-sectional views illustrating a curing step and a heat treatment step in a method of manufacturing a crystal oscillator according to an embodiment of the present invention.
  • FIG. 7 is a cross-sectional view for explaining the step of forming the internal space of the crystal oscillator manufacturing method according to an embodiment of the present invention.
  • FIGS. 8A and 8B are cross-sectional views illustrating a step of applying a resin material in a method of manufacturing a crystal oscillator according to another embodiment of the present invention.
  • FIG. 9 is a cross-sectional view illustrating a curing step and a heat treatment step in a method of manufacturing a crystal oscillator according to another embodiment of the present invention.
  • FIG. 10 is a cross-sectional view of the crystal oscillator according to an embodiment of the present invention.
  • FIG. 1 is a flowchart illustrating a method of manufacturing a crystal oscillator according to an embodiment of the present invention.
  • the method of manufacturing a crystal oscillator includes preparing a base structure (S100), preparing a crystal piece (S200), forming a coating layer (S300), and applying a resin material (S400). , Bonding the crystal pieces (S500), curing step (S550), heat treatment step (S600) and forming an internal space (S700).
  • FIG. 2 is a cross-sectional view for explaining a step (S100) of preparing a base structure (S100) and a step of preparing a crystal piece 300 of the crystal oscillator manufacturing method according to an embodiment of the present invention.
  • an electrode 110 is formed in the base structure 100.
  • the electrode 110 may be exposed to the upper surface of the base structure 100.
  • the crystal piece 300 is coupled to the electrode 110 on the upper surface in a later step.
  • Another electrode (not shown) may be formed on the bottom surface of the base structure 100.
  • the electrode on the lower surface is connected to the terminal on the electronic device side when the crystal oscillator is mounted on the electronic device. Power may be input through an electrode on the bottom surface, and a signal may be output.
  • the upper and lower electrodes may be formed of metal exposed to the surface of the base structure 100.
  • the electrode is preferably formed of a highly conductive metal such as gold, silver, or copper.
  • At least some of the upper and lower electrodes may be electrically connected to each other through a conductive pattern formed on or in the surface of the base structure 100.
  • the crystal piece 300 is provided is formed in a substantially flat shape. At least one terminal 310 is formed at one side of the crystal piece 300. Power may be supplied or a signal may be output through the terminal 310 of the crystal piece 300.
  • the terminal 310 of the crystal piece 300 may be formed of a metal exposed to the surface of the crystal piece 300.
  • the terminal 310 is preferably formed of a metal having high conductivity, such as gold, silver, and copper.
  • FIG 3 is a cross-sectional view for explaining a step (S300) of forming a coating layer of the crystal oscillator manufacturing method according to an embodiment of the present invention.
  • the coating layer 500 may be formed on at least one of the electrode 110 of the base structure 100 and the terminal 310 of the crystal piece 300.
  • the coating layer 500 may be formed to cover at least a portion of a surface of at least one of the electrode 110 of the base structure 100 and the terminal 310 of the crystal piece 300 with a predetermined thickness.
  • the coating layer 500 is formed of a first metal material.
  • a metal material having a relatively low melting point may be used.
  • the first metal material may be formed of a material having a lower melting point than the metal forming the electrode 110 of the base structure 100 and the terminal 310 of the crystal piece 300.
  • the first metal material may include at least one of tin, lead, zinc, bismuth, and cadmium.
  • the coating layer 500 may be formed by discharging coating particles on the surfaces of the electrode 110 and the crystal piece 300 by the sputtering method.
  • the coating layer 500 may be formed of a plating layer formed only in the selective region.
  • 4A and 4B are cross-sectional views for explaining a step (S400) of applying a resin material in a method of manufacturing a crystal oscillator according to an exemplary embodiment of the present invention.
  • the resin material 200 is applied in a viscous liquid to the electrode 110 of the upper surface of the base structure 100.
  • the resin material 200 may be applied to be formed at a predetermined height on the upper surface of the electrode 110.
  • FIG. 4B is an enlarged schematic view of a portion of the resin material 200 in FIG. 4A.
  • the filler 230 of the second metal material shown in FIG. 4B is schematically illustrated for convenience of description and may be different from the actual form.
  • the resin material 200 may include an adhesive resin material 210 and a filler 230 of a second metal material.
  • the adhesive resin material 210 may be applied as a non-conductive resin material in a liquid state and then cured.
  • Adhesive resin material 210 may be room temperature curing or heat curing. When the adhesive resin material 210 is cured, the adhesive resin 210 may be adhesive, and may be cured by being bonded to the electrode 110 of the base structure 100 and the crystal piece 300 coupled thereto.
  • the adhesive resin material 210 may be, for example, an epoxy resin material 200 or a silicone resin material 200.
  • the adhesive resin material 210 itself may be non-conductive.
  • the adhesive resin material 210 preferably has a sufficient heat resistance temperature so as not to be damaged or adhesiveness is reduced in the subsequent heat treatment step. Specifically, the heat resistance temperature of the adhesive resin material 210 is preferably higher than the melting point of the first metal material.
  • the resin material 200 may have a filler 230 of a second metal material evenly distributed on the liquid adhesive resin material 210.
  • the filler 230 of the second metal material may be formed in a powder form.
  • the filler 230 of the second metal material may be uniformly mixed with the liquid adhesive resin 210 to form a predetermined shape. Through this, the conductivity of the resin material 200 may be improved.
  • the filler 230 of the second metal material may be formed of a material having excellent electrical conductivity among metals.
  • the filler 230 of the second metal material may be formed of a material having a relatively high melting point among the metals.
  • the second metal material may have a relatively higher electrical conductivity and a higher melting point metal than the first metal material forming the coating layer 500.
  • the second metal material may be formed of, for example, a material including at least one of gold, silver, copper, and aluminum. In some cases, the second metal material may be formed of the same material as the electrode 110 of the base structure 100 or the terminal 310 of the crystal piece 300.
  • FIG. 5 is a cross-sectional view for explaining the step (S500) of coupling the crystal piece of the crystal oscillator manufacturing method according to an embodiment of the present invention.
  • the crystal piece 300 is coupled by the resin material 200 and disposed on an upper surface of the base structure 100. Specifically, the terminal 310 portion of the crystal piece 300 is brought into contact with and coupled to the liquid resin material 200 before curing. A portion of the terminal 310 of the crystal piece 300 may be located inside the resin material 200. The crystal piece 300 coupled to the resin material 200 may be positioned in a spaced state without directly contacting the base structure 100.
  • the terminal 310 of the crystal piece 300 is electrically connected to the electrode 110 of the base structure 100 through the resin material 200.
  • the crystal piece 300 may receive power input to the electrode 110 of the base structure 100 through the resin material 200, and may output a signal.
  • 6A and 6B are cross-sectional views illustrating a curing step (S550) and a heat treatment step (S600) in the method of manufacturing a quartz crystal oscillator according to an embodiment of the present invention.
  • the resin material 200 may be cured. Specifically, the resin material 200 may be room temperature curing or heat curing. When the resin material 200 is thermally cured, the curing step S550 may be performed in one step with the step S600 of heat treatment. As the resin material 200 is cured, the crystal piece 300 is fixed and coupled.
  • the air inside the adhesive resin 210 is released, a portion of the adhesive resin 210 is vaporized, or the adhesive resin 210 itself is condensed to reduce the volume. can do.
  • the resin material 200 may be deformed by gravity or the pressure of the crystal piece 300.
  • the resin material 200 may be changed so that the distribution of the filler 230 of the second metal material is biased in some portions.
  • Such a decrease in volume, change in form, and change in the distribution of the filler may be a phenomenon in which the resin material 200 is peeled off from the contact portion of the terminal 310 of the crystal piece 300 and the electrode 110 of the base structure 100. Can cause. Accordingly, the resin material 200 may be in close contact with the terminal 310 of the crystal piece 300 or the electrode 110 of the base structure 100 so as not to be coupled to each other, and thus, a peeling surface 250 may be formed. This may reduce electrical connectivity between the terminal 310 of the crystal piece 300 and the electrode 110 of the base structure 100 and may reduce durability and reliability.
  • 6A is a cross-sectional view schematically illustrating that a peeling phenomenon occurs when the crystal piece 300 is bonded to the resin material 200 in a state where the coating layer 500 is not present.
  • the peeling phenomenon occurs between the terminal 310 of the crystal piece 300 and the resin material 200, but in some cases, the peeling phenomenon may be performed by using the electrode 110 and the resin material of the base structure 100 ( It may also occur between 200).
  • FIG. 6B is a cross-sectional view schematically showing that the coating layer 500 is positioned at the peelable part to achieve electrical connection.
  • the heat treatment step (S600) is a step of melting the coating layer 500 by exposing the resin material 200 to a predetermined temperature.
  • the temperature of the heat treatment is preferably higher than the melting point of the first metal material, but lower than the melting point of the second metal material.
  • the heat treatment temperature may be about 300 ° C.
  • the coating layer 500 of the first metal material may be melted.
  • the molten coating layer 500 may be diffused between the terminal 310 of the crystal piece 300 and the resin material 200.
  • the molten coating layer 500 may be spread between the terminal 310 of the base structure 100 and the resin material 200.
  • the molten coating layer 500 may be diffused into the resin material 200.
  • the molten coating layer 500 may be electrically connected to the filler 230 of the second metal material of the resin material 200.
  • the coating layer 500 can strengthen the electrical connection between the electrode 110 of the base structure 100 and the resin material 200 or between the terminal 310 of the crystal piece 300 and the resin material 200. have.
  • the molten coating layer 500 may be solidified again after the heat treatment process is completed to suppress the peeling phenomenon as much as possible.
  • the resin material 200 between the terminal 310 of the crystal piece 300 and the electrode 110 of the base structure 100 may have an electrical conductivity of 10% or more after heat treatment.
  • the crystal piece 300 and the resin material 200 and between the electrode 110 and the resin material 200 of the base structure 100 is tightly coupled to be firmly coupled to improve durability and reliability.
  • FIG. 7 is a cross-sectional view for explaining the step (S700) of forming the internal space of the crystal oscillator manufacturing method according to an embodiment of the present invention.
  • the forming of the inner space may be performed by coupling the cover 400 to the base structure 100 to form an inner space in which the crystal piece 300 is accommodated.
  • Cover 400 may be formed in the form of a cap (cap), or may be formed in a form that the side wall and the upper surface is separated and combined.
  • the cover 400 is coupled to the base structure 100 by soldering, bonding, or thermal fusion.
  • the cover 400 and the base structure 100 may be hermetically coupled to seal the internal space.
  • This embodiment is characterized in that the filler 220 of the first metal material is further included in the resin material 200 in the manufacturing method of the crystal oscillator described above with reference to FIGS. Therefore, for convenience of description, it will be described with reference to FIGS. 1 to 7 different from the above-described embodiment.
  • FIGS. 8A and 8B are cross-sectional views illustrating a step of applying the resin material 200 in the method of manufacturing a crystal oscillator according to another embodiment of the present invention.
  • the resin material 200 is applied in a viscous liquid to the electrode 110 of the upper surface of the base structure 100.
  • the resin material 200 may be applied to be formed at a predetermined height on the upper surface of the electrode 110.
  • FIG. 8B is an enlarged schematic view of a portion of the resin material 200 in FIG. 8A.
  • the first metal filler 220 and the second metal filler 230 illustrated in FIG. 8B are schematically illustrated for convenience of description and may be different from the actual shapes.
  • the resin material 200 may include an adhesive resin material 210, a first filler 220, and a second filler 230.
  • the filler 220 of the first metal material may be formed in a powder form.
  • the filler 220 of the first metal material may be uniformly mixed with the liquid adhesive resin material 210 together with the filler 230 of the second metal material to form a predetermined shape. Through this, the conductivity of the resin material 200 may be improved.
  • the filler 220 of the first metal material is formed of the same material as the coating layer 500. Therefore, the filler 220 of the first metal material may have lower electrical conductivity and lower melting point than the filler 230 of the second metal material.
  • FIG. 9 is a cross-sectional view illustrating a curing step and a heat treatment step in a method of manufacturing a crystal oscillator according to another embodiment of the present invention.
  • the filler 220 of the first metal material may be melted.
  • the molten first metal filler 220 may be electrically connected to the coating layer 500.
  • both of them may be diffused and merged in a molten state, and then solidified to maintain the electrically connected state.
  • the molten first metal filler 220 may be diffused between the second metal filler 230.
  • the coating layer 500 may further strengthen the electrical connection between the electrode 110 of the base structure 100 and the resin material 200 or between the terminal 310 of the crystal piece 300 and the resin material 200. Can be.
  • the molten coating layer 500 and the filler 220 of the first metal material may be solidified again after the heat treatment process is completed to further suppress the peeling phenomenon.
  • the crystal piece 300 and the resin material 200 and between the electrode 110 and the resin material 200 of the base structure 100 is tightly coupled to be firmly coupled to further improve durability and reliability.
  • An embodiment of the crystal oscillator corresponds to the crystal oscillator manufactured by the method of manufacturing the crystal oscillator described above with reference to FIGS. 1 to 7. Therefore, some of the duplicated content will be omitted for convenience of description.
  • the crystal oscillator includes a package structure, a crystal piece 300, a coating layer 500, and a resin material 200.
  • the package structure may include a base structure 100 and a cover 400.
  • the package structure forms an interior space and includes an electrode 110 exposed to the interior space.
  • a portion of the terminal 310 is coupled by the resin material 200 to be electrically connected to the electrode 110.
  • the coating layer 500 is formed by being coupled to at least one of the electrode 110 of the package structure and the terminal 310 of the crystal piece 300.
  • the coating layer 500 is formed of a first metal material.
  • the resin material 200 is formed conductively.
  • the resin material 200 includes an adhesive resin material 210 and a filler 230 of a second metal material evenly distributed on the adhesive resin material 210.
  • the first metal material may have a lower melting point than the second metal material.
  • the first metal material may have a lower melting point than the heat resistance temperature of the adhesive resin material 210.
  • the first metal material may include at least one of tin, lead, zinc, bismuth, and cadmium
  • the second metal material may include at least one of gold, silver, copper, and aluminum.
  • the coating layer 500 is melted and solidified again, and is spread between the terminal 310 of the crystal piece 300 and the resin material 200 or between the electrode 110 and the resin material 200 of the package structure. It may be diffused, or may be formed to diffuse into the resin material 200.
  • the filler material 220 of the first metal material may be evenly distributed in the resin material 200 together with the filler material 230 of the second metal material.
  • the filler 220 of the first metal material is melted and solidified, and may be formed by being electrically connected to the coating layer 500 or diffused between the fillers 230 of the second metal material.
  • the peeling phenomenon of the resin material 200 can be suppressed as much as possible. This can improve electrical connectivity.
  • the crystal piece 300 and the resin material 200 and tightly coupled between the electrode 110 and the resin material 200 of the package structure can be firmly coupled to improve durability and reliability.

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  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Composite Materials (AREA)
  • Materials Engineering (AREA)
  • Oscillators With Electromechanical Resonators (AREA)

Abstract

La présente invention porte sur un oscillateur à quartz et sur son procédé de production. La présente invention concerne un oscillateur à quartz et son procédé de production, le procédé comprenant les étapes consistant à : préparer une structure de base ayant une électrode ; préparer une pièce de cristal ayant une borne ; former un revêtement d'un premier matériau métallique sur l'électrode de la structure de base et/ou à la borne de la pièce de cristal ; appliquer un matériau de résine liquide, qui a une charge d'un second matériau métallique dispersée de manière homogène en son sein, sur la surface de l'électrode de la structure de base ; coupler la pièce de cristal au matériau de résine ; traiter thermiquement le matériau de résine à une température supérieure au point de fusion du premier matériau métallique et supérieure au point de fusion du second matériau métallique ; et coupler un couvercle à la structure de base de manière à former un espace interne destiné à recevoir la pièce de cristal.
PCT/KR2016/003743 2015-05-27 2016-04-08 Oscillateur à quartz et son procédé de production WO2016190539A1 (fr)

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KR10-2015-0073654 2015-05-27

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005005963A (ja) * 2003-06-11 2005-01-06 Toyo Commun Equip Co Ltd 圧電デバイスとその製造方法
JP2006211089A (ja) * 2005-01-26 2006-08-10 Daishinku Corp 圧電振動デバイス
JP2007274104A (ja) * 2006-03-30 2007-10-18 Daishinku Corp 圧電振動デバイスおよび圧電振動デバイスの製造方法
JP2008295031A (ja) * 2007-04-27 2008-12-04 Daishinku Corp 水晶振動デバイス
JP2010177810A (ja) * 2009-01-27 2010-08-12 Daishinku Corp 圧電振動デバイスおよび圧電振動デバイスの製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005005963A (ja) * 2003-06-11 2005-01-06 Toyo Commun Equip Co Ltd 圧電デバイスとその製造方法
JP2006211089A (ja) * 2005-01-26 2006-08-10 Daishinku Corp 圧電振動デバイス
JP2007274104A (ja) * 2006-03-30 2007-10-18 Daishinku Corp 圧電振動デバイスおよび圧電振動デバイスの製造方法
JP2008295031A (ja) * 2007-04-27 2008-12-04 Daishinku Corp 水晶振動デバイス
JP2010177810A (ja) * 2009-01-27 2010-08-12 Daishinku Corp 圧電振動デバイスおよび圧電振動デバイスの製造方法

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