WO2016188247A1 - Oled器件及其制备方法、显示装置 - Google Patents

Oled器件及其制备方法、显示装置 Download PDF

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WO2016188247A1
WO2016188247A1 PCT/CN2016/079033 CN2016079033W WO2016188247A1 WO 2016188247 A1 WO2016188247 A1 WO 2016188247A1 CN 2016079033 W CN2016079033 W CN 2016079033W WO 2016188247 A1 WO2016188247 A1 WO 2016188247A1
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layer
cathode
metal layer
oled device
anode
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French (fr)
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裴凤巍
赵子仪
张金中
权宁浩
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BOE Technology Group Co Ltd
Ordos Yuansheng Optoelectronics Co Ltd
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BOE Technology Group Co Ltd
Ordos Yuansheng Optoelectronics Co Ltd
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    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H10K85/331—Metal complexes comprising an iron-series metal, e.g. Fe, Co, Ni
    • H—ELECTRICITY
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17—Carrier injection layers
    • H10K50/171—Electron injection layers
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/828—Transparent cathodes, e.g. comprising thin metal layers
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8052—Cathodes
    • H10K59/80524—Transparent cathodes, e.g. comprising thin metal layers
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
    • H—ELECTRICITY
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2101/00—Properties of the organic materials covered by group H10K85/00
    • H10K2101/30—Highest occupied molecular orbital [HOMO], lowest unoccupied molecular orbital [LUMO] or Fermi energy values
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2101/00—Properties of the organic materials covered by group H10K85/00
    • H10K2101/40—Interrelation of parameters between multiple constituent active layers or sublayers, e.g. HOMO values in adjacent layers
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/302—Details of OLEDs of OLED structures
    • H10K2102/3023—Direction of light emission
    • H10K2102/3026—Top emission
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes
    • H10K59/80518—Reflective anodes, e.g. ITO combined with thick metallic layers

Definitions

  • Embodiments of the present disclosure relate to an OLED device, a method of fabricating the same, and a display device.
  • An OLED (Organic Light Emitting Diode) display is a self-luminous display. Compared with an LCD (liquid crystal display), an OLED display does not require a backlight. Therefore, the OLED display is lighter and thinner, and the OLED display is further With high brightness, low power consumption, wide viewing angle, high response speed, wide operating temperature range, etc., it is increasingly used in various high performance display fields.
  • the luminescence mechanism of the OLED device is that under the action of an applied electric field, electrons and holes are injected into the organic luminescent material from the positive and negative electrodes, respectively, so that migration, recombination and attenuation are performed in the organic luminescent material to emit light. Since the electron affinity of the organic light-emitting material is much smaller than that of the metal or inorganic material, in order to efficiently inject electrons into the organic light-emitting material, the work function of the cathode material must be sufficiently low. Currently, metals or metal alloys with low work functions are commonly used as cathodes for OLED devices.
  • the metal or the metal alloy is easily deteriorated in the atmospheric environment, thereby degrading the quality of the OLED device.
  • the cost of metals or metal alloys is higher.
  • an OLED device including an anode, a cathode, and a functional layer between the anode and the cathode, the cathode including an organic metal layer including an organic metal .
  • the organometallic layer has a work function of from 2.9 eV to 3.7 eV.
  • a display device including any of the OLED devices described above is provided.
  • a method of fabricating an OLED device including:
  • an intermediate functional layer wherein the cathode comprises an organic metal layer, and the organic metal layer comprises an organic metal.
  • the organometallic layer has a work function of from 2.9 eV to 3.7 eV.
  • FIG. 1 is a schematic structural diagram of an OLED device according to an embodiment of the present disclosure.
  • FIG. 2 is a schematic structural view of an OLED device after the functional layer 12 in the OLED device shown in FIG. 1 is refined.
  • FIG. 3 is a schematic structural diagram of another OLED device according to an embodiment of the present disclosure.
  • FIG. 4 is a schematic structural diagram of a display device according to an embodiment of the present disclosure.
  • FIG. 5 is a flow chart of a process for preparing an OLED device according to an embodiment of the present disclosure.
  • FIG. 6 is a flow chart of a process for preparing another OLED device according to an embodiment of the present disclosure.
  • An embodiment of the present disclosure provides an OLED display, as shown in FIG. 1, comprising an anode 10, a cathode 11, and a functional layer 12 between the anode 10 and the cathode 11.
  • the cathode 11 has an organic metal layer containing an organic metal.
  • the organic gold The work function of the genus layer is 2.9 eV to 3.7 eV.
  • the first and the above-mentioned functional layer 12, as shown in FIG. 2, includes at least the light-emitting layer 120, and may further include an electron transport layer 130 and a hole transport layer 140, and further, in order to improve the electron and The efficiency of hole injection into the light-emitting layer, the functional layer 12 may further include an electron injection layer 131 disposed between the cathode and the electron transport layer, and disposed between the hole transport layer 140 and the anode 10.
  • the hole injection layer 141 does not limit the specific structure of the functional layer 12.
  • the light-emitting layers 120 of the three sub-pixels are respectively emitted. Red, green and blue light.
  • the light-emitting layer 120 may emit white light, and a color filter layer having at least red, green, and blue colors may be disposed on the light-emitting side of the light-emitting layer 120 to realize color display.
  • the present disclosure does not limit how to implement color display, but the corresponding drawings in the following embodiments are exemplified by the light-emitting layer 120 capable of emitting red, green, and blue light.
  • the anode 10 of the above OLED device can be fabricated on the transparent substrate 01.
  • the transparent substrate 01 may be composed of a transparent hard resin or a transparent glass substrate.
  • the transparent substrate 01 may be a flexible substrate composed of a transparent resin material.
  • the organic metal layer hence the name is the layer structure formed by the organometallic material.
  • Organometallics also known as organometallic conductors, or organometallic compounds.
  • Embodiments of the present disclosure provide an OLED device that can include an anode, a cathode, and a functional layer between the anode and the cathode.
  • the cathode has an organic metal layer that contains an organometallic.
  • the organometallic layer has a work function of from 2.9 eV to 3.7 eV.
  • the organic metal layer having a higher transmittance is used as the cathode than the cathode composed of the metal element or the alloy, and the luminous efficiency of the OLED device can be improved;
  • the luminescence principle of an OLED device is to emit light by injecting electrons and holes from a cathode and an anode, respectively, and generating excitons in a functional layer, and since the electron affinity of the organic material constituting the functional layer is small,
  • the work function of the organic metal layer is between 2.9 eV and 3.7 eV, the work function of the cathode composed of the organic metal layer is low, thereby facilitating the improvement of the electron transport performance, so that the electrons can be in the process of luminescence of the OLED device. More efficient injection into the functional layer.
  • the chemical properties are relatively stable.
  • Embodiment 1 An OLED device comprising an anode, a cathode, and a functional layer between the anode and the cathode, wherein the cathode comprises an organic metal layer, and the organic metal layer comprises an organic metal.
  • Embodiment 2 The OLED device according to Embodiment 1, wherein the organic metal layer has a work function of 2.9 eV to 3.7 eV.
  • cathode further comprises a cathode metal layer, the cathode metal layer comprising a metal.
  • the OLED device according to any one of embodiments 1 to 6, wherein the organic metal layer has a thickness of 50 angstroms to 100 angstroms.
  • the functional layer comprises at least one selected from the group consisting of an electron injection layer, an electron transport layer, a hole injection layer, and a hole transport layer .
  • Embodiment 11 A display device comprising the OLED device of any of Embodiments 1-10.
  • Embodiment 12 A method of fabricating an OLED device, comprising: forming an anode, a cathode, and a functional layer between the anode and the cathode on a substrate by a patterning process, wherein the cathode comprises an organic metal layer,
  • the organic metal layer includes an organic metal.
  • organometallic is at least one selected from the group consisting of ferrocene or an organic conductive material containing a ferrocene group.
  • forming a cathode on the substrate by the patterning process comprises: forming an organic metal layer on the substrate by a patterning process, the organic metal The thickness of the layer is from 50 angstroms to 100 angstroms.
  • the forming the cathode on the substrate by the patterning process further comprises: forming a cathode metal layer on the organic metal layer by a patterning process, the thickness of the cathode metal layer It is 120 angstroms to 160 angstroms.
  • the OLED device in this embodiment includes the anode 10, the cathode 11, and the functional layer 12 described above.
  • the organic metal layer 110 constituting the cathode 11 is ferrocene or an organic conductive material containing a ferrocene group.
  • a ferrocene or ferrocene-based organic conductive material as a main material constituting the cathode 11 has the following advantages.
  • ferrocene or ferrocene-based organic conductive materials have high chemical stability.
  • ferrocene can be obtained by reacting cyclopentene with iron elemental substance (Fe) at 300 ° C in a nitrogen (N 2 ) atmosphere.
  • Fe iron elemental substance
  • N 2 nitrogen
  • each ring contains 6 ⁇ electrons, which meets the requirement of 4n+2 electron number in the Huckel rule (n is a positive integer), and each ring has aromaticity.
  • the 6 electrons of each ring are multiplied by 2, and the 6 d electrons of the divalent iron ions are exactly equal to 18, which is in accordance with the 18-electron rule. Therefore, the ferrocene is very stable in air and can be heated at a high temperature of 470 ° C; In boiling water, 10% boiling lye and concentrated hydrochloric acid in boiling water Neither dissolved nor decomposed.
  • the structure of ferrocene is such that one iron atom is between the rings of two cyclopentadienes (for example between two parallel rings of cyclopentadiene).
  • the two molybdenum rings are staggered to each other in a completely wrong configuration, and when the temperature is raised, they are relatively rotated about the vertical axis, and the ferrocene is chemically stable, similar to an aromatic compound.
  • the cathode 11 composed of a simple metal or alloy has poor stability in the atmosphere with respect to the cathode 11 made of ferrocene.
  • the ring of ferrocene can undergo an electrophilic substitution reaction, such as amalgamation, alkylation, acylation, etc., to form an organic conductive material containing a ferrocenyl group, for example, ferrocene and n-butyllithium.
  • an electrophilic substitution reaction such as amalgamation, alkylation, acylation, etc.
  • the reaction produces 1,1'-dilithium ferrocene.
  • the specific chemical reaction formula is:
  • ferrocene has high chemical stability
  • the use of ferrocene or a ferrocene-containing organic conductive material to form the cathode 11 of the OLED device can improve the stability and service life of the OLED device.
  • ferrocene or an organic conductive material containing a ferrocene group has a lower work function.
  • the experimental data showed that the HOMO (Highest Occupied Molecular) of the ferrocene was 4.67 eV, and the LOMO (Lowest Unoccupied Molecular) of the ferrocene was 0.98 eV. Therefore, the work function of ferrocene is 3.69 eV, and the work function of ferrocene is lower than that of metal silver (work function of 4.26 eV) which is commonly used as the cathode 11 of the OLED device. Therefore, when ferrocene is used as the cathode 11 of the OLED device, it is advantageous to improve the electron transport performance, so that the electrons can be more efficiently injected into the functional layer during the luminescence process of the OLED device.
  • an organic conductive material containing a ferrocene group for example, 1,1'-dilithium ferrocene formed by the reaction of ferrocene with n-butyllithium has a work function of 2.9 eV due to lithium metal element. Therefore, the 1,1'-dilithium ferrocene has a lower work function with respect to ferrocene, and a better effect can be obtained as a material constituting the cathode 11.
  • the cathode 11 in Embodiment 1 is composed of an organic metal layer 110 (for example, ferrocene or an organic conductive material containing a ferrocene group).
  • the cathode 11 in this embodiment may be composed of two or more thin film layers.
  • the cathode 11 includes a cathode metal layer 111 in addition to the organic metal layer 110, the cathode metal layer 111 is located on a side of the organic metal layer 110 away from the anode 11, and the organic metal layer 110 Connection is made to increase the conductivity of the cathode 11.
  • the organic metal layer 110 is located on the side close to the light-emitting layer 120, which can effectively improve the ability of electron injection.
  • the metal constituting the cathode metal layer 111 may include some metal elements having a lower work function, such as silver (work function is 4.26 eV), magnesium (work function is 3.68 eV), aluminum. (Work function is 4.28 eV), calcium (work function is 2.9 eV), lithium (work function is 2.9 eV), and at least one of ⁇ (work function is 3.1 eV). Since the work function of metallic elemental magnesium is low, the chemical properties of metallic elemental silver are relatively stable. Therefore, in some embodiments, the cathode metal layer 111 is made of a silver-magnesium alloy (Mg/Ag).
  • Mg/Ag silver-magnesium alloy
  • the cathode metal layer 111 has higher conductivity, the organic metal layer 110 has higher transmittance and stability, and the cost is lower. Therefore, the cathode 11 provided in this embodiment has high conductivity and high transmittance, stability and low cost.
  • the work function of the cathode 11 of the embodiment of the present disclosure is low, the injection efficiency of electrons can be improved. Therefore, it is not necessary to provide the electron injection layer 131 in the OLED device, that is, in some embodiments, the OLED device does not contain an electron injection layer. Thereby, the thickness of the OLED device can be reduced, which is advantageous for the ultra-thin design of the display device.
  • an electron blocking layer 21 may be disposed between the light emitting layer 120 and the hole transport layer 140.
  • the thickness of the organometallic layer 110 may be greater than 50 angstroms, such as 50 angstroms to 100 angstroms.
  • the thickness of the organic metal layer 110 is less than 50 angstroms, since the thickness is too thin, the ability of the organic metal layer 110 to improve electron transport and the light transmittance are lowered.
  • the thickness of the organic metal layer 110 is greater than 100 angstroms, although the ability of electron transport can be improved, the thickness of the OLED device is increased due to its thickness, which is disadvantageous for the ultra-thin design of the OLED display.
  • the anode 10 may be constructed of a single layer of metal.
  • the anode 10 may be made of a transparent conductive material such as indium zinc oxide or indium tin oxide (ITO).
  • ITO indium zinc oxide
  • the anode 10 composed of a simple metal material is superior in conductivity to the anode 10 described above by using the above transparent conductive material. Therefore, the anode 10 can be formed by using a plurality of thin film layers. As shown in FIG. 3, the anode 10 can include two transparent conductive layers. 101, and an anode metal layer 102 between the two transparent conductive layers 101.
  • the anode metal layer 102 may be made of a metal elemental silver having a higher work function, and the transparent conductive layer 101 is made of the above transparent conductive material.
  • the conductive property of the anode 10 can be improved by the anode metal layer 102, and the manufacturing cost of the anode 10 can be reduced by the transparent conductive layer 101.
  • the light emitted from the light emitting layer 120 can be reflected by the anode metal layer 102, so that the utilization of light can be improved.
  • Embodiments of the present disclosure provide a display device including any of the OLED devices described above. It has the same structure and advantageous effects as the OLED device provided by the foregoing embodiments. Since the foregoing embodiments have described the structure and beneficial effects of the OLED device in detail, they are not described herein again.
  • the OLED device can be divided into two types: a PMOLED (Passive Matrix Driving OLED) and an AMOLED (Active Matrix Driving OLED).
  • the display device provided by some embodiments of the present disclosure is an active matrix type OLED display, that is, as shown in FIG. 4, the OLED display further includes a small-sized display.
  • the thin film transistor 30, the drain 301 of the thin film transistor 30 may be connected to the anode, for example, to the transparent conductive layer 101 which constitutes the anode 10 in the top emission OLED device as shown in FIG. 3 and is close to the side of the thin film transistor 30. .
  • the thin film transistor 30 includes a gate 302, a gate insulating layer 303, a semiconductor active layer 304, a source 305, and a drain 301; and the thin film transistor 30 may be of a top gate type or as shown in FIG. Bottom grid type.
  • the OLED display further includes a gate line electrically connected to the gate 302, a gate line lead (not shown), and the like, and a data line and a data line lead electrically connected to the source 305 (in the figure) Not identified) and so on.
  • An embodiment of the present disclosure provides a method for fabricating an OLED device. As shown in FIG. 5, the method may include:
  • an anode 10 as shown in FIG. 1 is formed by a patterning process.
  • the functional layer 12 is formed by a patterning process.
  • the patterning process in the embodiments of the present disclosure may include a photolithography process, or include a photolithography process and an etching process, and may also include other processes for forming a predetermined pattern, such as printing, inkjet, and the like;
  • the lithography process includes a process of forming a film, exposing, developing, etc., and specifically, a process of forming a pattern by using a photoresist, a mask, an exposure machine, or the like.
  • the corresponding patterning process can be selected in accordance with the structure formed in the present disclosure.
  • the transparent substrate 01 may be made of a hard material such as a glass substrate, a hard resin substrate, or a transparent substrate made of a flexible material. Moreover, in the above steps, various film layers are prepared on the transparent substrate 01, which may be directly prepared on the surface of the transparent substrate 01, or may be performed on the transparent substrate 01 on which some film layers or film layer patterns have been formed. Preparation, for example, in step S103, forming the cathode 11 by a patterning process on the transparent substrate 01 means that the cathode 11 is formed by a patterning process on the transparent substrate 01 on which the functional layer 12 is formed.
  • Embodiments of the present disclosure provide a method of fabricating an OLED device, comprising forming a cathode on a transparent substrate by a patterning process, wherein the cathode is mainly composed of an organic metal layer, and the work function of the organic metal layer is 2.9 eV to 3.7 eV.
  • the organic metal layer having a higher transmittance is used as the cathode than the cathode composed of the metal element or the alloy, and the luminous efficiency of the OLED device can be improved;
  • the luminescence principle of an OLED device is to emit light by injecting electrons and holes from a cathode and an anode, respectively, and generating excitons in a functional layer, and since the electron affinity of the organic material constituting the functional layer is small,
  • the work function of the organic metal layer is between 2.9 eV and 3.7 eV, the work function of the cathode composed of the organic metal layer is low, thereby facilitating the improvement of the electron transport performance, so that the electrons can be in the process of luminescence of the OLED device. More efficient injection into the functional layer.
  • the organic metal layer is relatively low in cost relative to the metal element or alloy, the fabrication cost of the OLED device can be reduced.
  • the preparation method of the above OLED device is exemplified in detail by a specific embodiment, wherein the preparation method can be as shown in FIG. 6.
  • the transparent substrate 01 is cleaned, and the anode 10 is formed on the transparent substrate 01.
  • a transparent conductive layer 101 having a thickness of 50 angstroms to 100 angstroms and an anode metal layer 102 having a thickness of 900 angstroms to 1100 angstroms as shown in FIG. 3 are sequentially deposited on the transparent substrate 01 by using a sputtering apparatus.
  • the metal elemental silver constitutes the above-mentioned anode metal layer and another layer of the transparent conductive layer 101 having a thickness of 50 angstroms to 100 angstroms.
  • the conductive property of the anode 10 can be improved by the anode metal layer 102. And the manufacturing cost of the anode 10 is reduced by the transparent conductive layer 101.
  • the light emitted from the light emitting layer 120 can be reflected by the anode metal layer 102, so that the utilization of light can be improved.
  • a hole injection layer 141, a hole transport layer 140, an electron blocking layer 21, a light-emitting layer 120, and an electron transport layer 130, as shown in FIG. 3, are sequentially formed by a vapor deposition process.
  • the substrate formed by the anode 10 may be placed in a wire source evaporation chamber, and a hole injection layer 141 having a thickness of 50 angstroms to 100 angstroms may be sequentially formed by a heating evaporation process; the thickness is 1000 angstroms to 1200 angstroms.
  • Hole transport layer 140 electron blocking layer 21 having a thickness of 50 angstroms to 120 angstroms; red (R) light emitting unit having a thickness of 850 angstroms to 950 angstroms, and green (G) light emitting unit having a thickness of 700 angstroms to 750 angstroms And a light-emitting layer 120 composed of a blue (B) light-emitting unit having a thickness of 200 angstroms to 250 angstroms; and an electron transport layer 130 having a thickness of 250 angstroms to 300 angstroms.
  • red (R) light emitting unit having a thickness of 850 angstroms to 950 angstroms
  • G green
  • a light-emitting layer 120 composed of a blue (B) light-emitting unit having a thickness of 200 angstroms to 250 angstroms
  • an electron transport layer 130 having a thickness of 250 angstroms to 300 angstroms.
  • the organic metal layer 110 and the cathode metal layer 111 as shown in FIG. 3 are sequentially formed by an evaporation process.
  • the substrate on which the electron transport layer 130 is formed may be placed in a point source evaporation chamber, and the ferrocene or ferrocene-containing layer may be evaporated under vacuum at a temperature of 100 ° C to 240 ° C.
  • An organic metal layer 110 composed of an organic conductive material.
  • the work function of ferrocene is 3.69 eV, and the work function of ferrocene is lower than that of metal silver (work function of 4.26 eV) which is commonly used as the cathode 11 of the OLED device. Therefore, when ferrocene is used as the cathode 11 of the OLED device, it is advantageous to improve the electron transport performance, so that the electrons can be more efficiently injected into the functional layer during the luminescence process of the OLED device.
  • an organic conductive material containing a ferrocene group for example, 1,1'-dilithium ferrocene formed by the reaction of ferrocene with n-butyllithium has a work function of 2.9 eV due to lithium metal element. Therefore, the 1,1'-dilithium ferrocene has a lower work function with respect to ferrocene, and a superior effect can be obtained as a material constituting the cathode 11.
  • the organic metal layer 110 may have a thickness of 50 angstroms to 100 angstroms. When the thickness of the organic metal layer 110 is less than 50 angstroms, since the thickness is too thin, the ability of the organic metal layer 110 to improve electron transport and the light transmittance are lowered. When the thickness of the organic metal layer 110 is greater than 100 angstroms, although the ability of electron transport can be improved, the thickness of the OLED device is increased due to its thickness, which is disadvantageous for the ultra-thin design of the OLED display.
  • the cathode metal layer 111 is made of a silver-magnesium alloy (Mg/Ag).
  • Mg/Ag silver-magnesium alloy
  • the point source evaporation process in this step has a low deposition rate and a small amount of materials relative to the line source evaporation process in step S202, and is therefore suitable for deposition on a relatively high cost raw material.
  • the flat layer 20 has a thickness of 1000 angstroms to 1100 angstroms, so that the flatness of the surface of the OLED device can be improved.
  • the cathode 11 is composed of a cathode metal layer 111 and an organic metal layer 110, and the anode is composed of an anode metal layer 102 and a transparent conductive layer 101 on both sides of the anode metal layer 102.
  • the cathode 11 when the OLED device is of the top emission type, the cathode 11 includes a metal element or alloy, which can improve the conductivity of the cathode 11, and the cathode 11 further includes an organic metal layer, which can improve the luminous efficiency of the OLED device.
  • the anode 10 includes an anode metal layer 102, which can improve the electrical conductivity of the anode 10.
  • the anode 10 further includes a transparent conductive layer 101, which can reduce the manufacturing cost of the anode 10.
  • the light emitted from the light emitting layer 120 can be reflected by the anode metal layer 102, so that the utilization of light can be improved.

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Abstract

一种OLED器件及其制备方法、显示装置。该OLED器件包括阳极(10)、阴极(11)以及位于该阳极(10)和该阴极(11)之间的功能层(12)，该阴极(11)包括有机金属层(110)，该有机金属层(110)包括有机金属。该OLED器件能够提高OLED器件中阴极(11)的稳定性，并降低OLED器件的成本。

Description

OLED器件及其制备方法、显示装置 技术领域
本公开的实施例涉及一种OLED器件及其制备方法、显示装置。
背景技术
OLED(Organic Light Emitting Diode，有机发光二极管)显示器是一种自发光显示器，与LCD(liquid crystal display,液晶显示器)相比，OLED显示器不需要背光灯，因此OLED显示器更为轻薄，此外OLED显示器还具有高亮度、低功耗、宽视角、高响应速度、宽使用温度范围等优点而越来越多地被应用于各种高性能显示领域当中。
OLED器件的发光机理是在外加电场的作用下，电子和空穴分别从正负两极注入有机发光材料，从而在该有机发光材料中进行迁移、复合并衰减而发光。由于有机发光材料的电子亲和势比金属或无机材料的电子亲和势要小得多，因此，为了有效地向有机发光材料中注入电子，阴极材料的功函数必须足够低。目前，通常用低功函数的金属或金属合金作为OLED器件的阴极。
然而，当采用金属或金属合金作为OLED器件的阴极材料时，一方面、金属或金属合金在大气环境中容易变质，从而会降低了OLED器件的质量。另一方面、金属或金属合金的成本较高。
发明内容
本公开的实施例的一方面，提供一种OLED器件，包括阳极、阴极以及位于所述阳极和所述阴极之间的功能层，所述阴极包括有机金属层，所述有机金属层包括有机金属。在一些实施方式中，所述有机金属层的功函数为2.9eV～3.7eV。
本公开实施例的另一方面，提供一种显示装置，包括如上所述的任意一种OLED器件。
本公开实施例的又一方面，提供一种制备OLED器件的方法，包括：
通过构图工艺在基板上形成阳极、阴极以及位于所述阳极和所述阴极之 间的功能层，其中所述阴极包括有机金属层，所述有机金属层包括有机金属。在一些实施方式中，所述有机金属层的功函数为2.9eV～3.7eV。
附图说明
为了更清楚地说明本公开实施例的技术方案，下面将对实施例的附图作简单地介绍，显而易见地，下面描述中的附图仅仅涉及本公开的一些实施例，而非对本公开的限制。
图1为本公开实施例提供的一种OLED器件的结构示意图。
图2为对图1所示的OLED器件中的功能层12进行细化后的OLED器件的结构示意图。
图3为本公开实施例提供的另一种OLED器件的结构示意图。
图4为本公开实施例提供的一种显示装置的结构示意图。
图5为本公开实施例提供的一种OLED器件的制备过程流程图。
图6为本公开实施例提供的另一种OLED器件的制备过程流程图。
附图标记：
01-透明基板；10-阳极；101-透明导电层；102-阳极金属层；11-阴极；110-有机金属层；12-功能层；120-发光层；130-电子传输层；131-电子注入层；140-空穴传输层；141-空穴注入层；20-平坦层；21-电子阻挡层；30-薄膜晶体管；301-漏极；302-栅极；303-栅绝缘层；304-半导体有源层；305-源极。
具体实施方式
为使本公开实施例的目的、技术方案和优点更加清楚，下面将结合本公开实施例的附图，对本公开实施例的技术方案进行清楚、完整地描述。显然，所描述的实施例是本公开的一部分实施例，而不是全部的实施例。基于所描述的本公开的实施例，本领域普通技术人员在无需创造性劳动的前提下所获得的所有其他实施例，都属于本公开保护的范围。
本公开实施例提供一种OLED显示器，如图1所示，包括阳极10、阴极11以及位于阳极10和阴极11之间的功能层12。在该实施例中，阴极11具有有机金属层，该有机金属层含有有机金属。在一些实施方式中，该有机金 属层的功函数为2.9eV～3.7eV。
需要说明的是，第一、上述由于功能层12，如图2所示，至少包括发光层120，在此基础上还可以包括电子传输层130和空穴传输层140，进一步为了能够提高电子和空穴注入发光层的效率，所述功能层12进一步还可以包括设置在阴极与所述电子传输层之间的电子注入层131，以及设置在所述空穴传输层140与阳极10之间的空穴注入层141。本公开对功能层12的具体结构不做限定。
在一些实施方式中，为了实现彩色显示，一个像素一般至少由红(R)、绿(G)、蓝(B)三种颜色的亚像素构成时，上述三个亚像素的发光层120分别发出红色、绿色和蓝色的光线。或者，上述发光层120还可以发出白色光线，再通过在发光层120的出光侧设置至少具有红色、绿色和蓝色的彩色滤光层，来实现彩色显示。本公开对如何实现彩色显示采用的方案不做限制，但以下实施例对应的附图中，均是以能够发出红色、绿色和蓝色光线的发光层120为例进行的说明。
第二、上述OLED器件的阳极10可以制作在透明基板01上。所述透明基板01可以由透明的硬质树脂或者透明玻璃基板构成。或者，对于柔性显示基板而言，上述透明基板01可以是由透明树脂材料构成的柔性基底。
第三、有机金属层，故名思议为有机金属材料形成的层结构。有机金属，也可称为有机金属导体、或有机金属化合物。
本公开实施例提供一种OLED器件，可以包括阳极、阴极以及位于阳极和阴极之间的功能层。在一些实施方式中，阴极具有有机金属层，该有机金属层含有有机金属。在一些实施方式中，该有机金属层的功函数为2.9eV～3.7eV。这样一来，一方面、当OLED器件为顶发射型时，相对于采用金属单质或合金构成的阴极，采用透射率较高的有机金属层作为阴极，可以提高OLED器件的发光效率；另一方面、OLED器件的发光原理，是通过将电子和空穴分别从阴极和阳极注入，并在功能层中复合产生激子而辐射发光，由于构成功能层的有机材料的电子亲和势很小，因此，当有机金属层的功函数在2.9eV～3.7eV之间，该有机金属层构成的阴极的功函数较低，从而有利于提高电子的传输性能，使得OLED器件在发光的过程中，电子能够更有效的注入至功能层中。又一方面，由于有机金属层相对于金属单质或合金 而言，成本较低，且化学性质较稳定。
本公开包含如下实施方式：
实施方式1、一种OLED器件，包括阳极、阴极以及位于所述阳极和所述阴极之间的功能层，其中所述阴极包括有机金属层，所述有机金属层包括有机金属。
实施方式2、根据实施方式1所述的OLED器件，其中所述有机金属层的功函数为2.9eV～3.7eV。
实施方式3、根据实施方式1或2所述的OLED器件，其中所述有机金属为选自以下的至少一种：二茂铁或含有二茂铁基的有机导电材料。
实施方式4、根据实施方式1至3中任一项所述的OLED器件，其中所述阴极还包括阴极金属层，所述阴极金属层包括金属。
实施方式5、根据实施方式4所述的OLED器件，其中所述阴极金属层位于所述有机金属层远离所述阳极的表面上，且与所述有机金属层直接接触。
实施方式6、根据实施方式4或5所述的OLED器件，其中所述阴极金属层包括：银、镁、铝、钙、锂以及钆中的至少一种。
实施方式7、根据实施方式1至6中任一项所述的OLED器件，其中所述有机金属层的厚度为50埃～100埃。
实施方式8、根据实施方式1所述的OLED器件，其中所述阳极包括两层透明导电层，以及位于所述两层透明导电层之间的阳极金属层。
实施方式9、根据实施方式1至8中任一项所述的OLED器件，其中所述功能层包括发光层。
实施方式10、根据实施方式1至9中任一项所述的OLED器件，其中所述功能层包括选自以下的至少一个：电子注入层、电子传输层、空穴注入层和空穴传输层。
实施方式11、一种显示装置，包括如实施方式1-10任一项所述的OLED器件。
实施方式12、一种制备OLED器件的方法，包括：通过构图工艺在基板上形成阳极、阴极以及位于所述阳极和所述阴极之间的功能层，其中所述阴极包括有机金属层，所述有机金属层包括有机金属。
实施方式13、根据实施方式12所述的方法，其中所述有机金属层的功 函数为2.9eV～3.7eV。
实施方式14、根据实施方式12或13所述的方法，其中有机金属为选自以下的至少一种：二茂铁或含有二茂铁基的有机导电材料。
实施方式15、根据实施方式12至14中任一项所述的方法，其中所述基板为透明基板。
实施方式16、根据实施方式12至15中任一项所述的方法，其中所述通过构图工艺在基板上形成阴极包括：在所述基板上，通过构图工艺形成有机金属层，所述有机金属层的厚度为50埃～100埃。
实施方式17、根据实施方式16所述的方法，其中所述通过构图工艺在基板上形成阴极还包括：在所述有机金属层上，通过构图工艺形成阴极金属层，所述阴极金属层的厚度为120埃～160埃。
以下通过具体的实施例对上述OLED器件的具体结构进行详细的描述。
实施例1
本实施例中OLED器件包括上述阳极10、阴极11以及功能层12。构成阴极11的有机金属层110为二茂铁或含有二茂铁基的有机导电材料。
采用二茂铁或二茂铁基的有机导电材料作为构成阴极11的主要材料，具有以下优势。
一方面、二茂铁或二茂铁基的有机导电材料具有较高的化学稳定性。
具体的，通过将环戊烯与铁单质(Fe)在300℃，氮气(N2)环境下发生反应，就可以得到二茂铁。具体的化学反应式为：
Figure PCTCN2016079033-appb-000001
可以看出，二茂铁中心铁原子的氧化态为+2，每个茂环带有一个单位负电荷。因此每个环含有6个π电子，符合休克尔规则中4n+2电子数的要求(n为正整数)，每个环都有芳香性。每个环的6个电子乘以2，再加上二价铁离子的6个d电子正好等于18，符合18电子规则，因此二茂铁在空气中非常稳定，并且可耐470℃高温加热；在沸水、10％沸碱液和浓盐酸沸液中 既不溶解也不分解。此外，二茂铁的结构为一个铁原子处在两个环戊二烯的环之间(例如处于两个平行的环戊二烯的环之间)。在固体状态下，两个茂环相互错开成全错构型，温度升高时则绕垂直轴相对转动，二茂铁的化学性质稳定，类似芳香族化合物。而由金属单质或合金构成的阴极11，相对于采用二茂铁构成的阴极11而言，在大气中稳定性较差。
此外，二茂铁的环能进行亲电取代反应，例如汞化、烷基化、酰基化等反应，从而可以形成含有二茂铁基的有机导电材料，例如，二茂铁与正丁基锂反应，可生成1,1'-二锂代二茂铁。具体的化学反应式为：
Figure PCTCN2016079033-appb-000002
综上所述，因为二茂铁的化学稳定性较高，所以采用二茂铁或含有二茂铁基的有机导电材料构成OLED器件的阴极11，能够提高OLED器件的稳定性和使用寿命。
另一方面、二茂铁或含有二茂铁基的有机导电材料具有较低的功函数。
通过实验数据可得二茂铁的HOMO(Highest Occupied Molecular，最高空轨道)为4.67eV，二茂铁的LOMO(Lowest Unoccupied Molecular，最低空轨道)为0.98eV。因此二茂铁的功函数为3.69eV，相对于常用作OLED器件阴极11的金属银(功函数为4.26eV)而言，二茂铁的功函数较低。因此，当采用二茂铁作为OLED器件的阴极11时，有利于提高电子的传输性能，使得OLED器件在发光的过程中，电子能够更有效的注入至功能层中。
此外，含有二茂铁基的有机导电材料，例如，二茂铁与正丁基锂反应生成的1,1'-二锂代二茂铁，由于金属单质锂的功函数为2.9eV。因此，1,1'-二锂代二茂铁相对于二茂铁而言，功函数更低，作为构成阴极11的材料可以取得更好的效果。
实施例2
实施例1中的阴极11由有机金属层110(例如：二茂铁或含有二茂铁基的有机导电材料)构成。而本实施例中的阴极11可以由两层以上的薄膜层构 成，如图3所示，所述阴极11除了包括有机金属层110以外，还包括阴极金属层111，该阴极金属层111位于有机金属层110远离阳极11的一侧，且与有机金属层110连接，以提高阴极11的导电性。此外，将有机金属层110位于靠近发光层120的一侧，可以有效提高电子注入的能力。其中，为了提高电子注入的效率，构成所述阴极金属层111的金属可以包括一些功函数较低的金属单质，例如：银(功函数为4.26eV)、镁(功函数为3.68eV)、铝(功函数为4.28eV)、钙(功函数为2.9eV)、锂(功函数为2.9eV)以及钆(功函数为3.1eV)中的至少一种。由于金属单质镁的功函数较低，而金属单质银的化学性能较稳定。因此，在一些实施方式中，上述阴极金属层111采用银镁合金(Mg/Ag)构成。
这样一来，由于阴极金属层111具有较高的导电性，而有机金属层110具有较高的透射率和稳定性，并且成本较低。因此本实施例提供的阴极11即具有较高的导电性，又具有较高的透射率、稳定性和低成本的特性。
需要说明的是，第一、由于本公开实施例的阴极11的功函数较低，因此能够提高电子的注入效率。所以可以在OLED器件中无需设置电子注入层131，也即，在一些实施方式中，所述OLED器件不含有电子注入层。从而可以减少OLED器件的厚度，有利于显示器件的超薄化设计。
第二、可以如图3所示，为了防止电子进入到空穴传输层140中，还可以在发光层120与空穴传输层140之间设置电子阻挡层21。
第三、本公开提供的实施例中，有机金属层110的厚度可以为大于50埃，例如50埃～100埃。当所述有机金属层110的厚度小于50埃时，由于厚度太薄，从而降低了有机金属层110提高电子传输的能力，以及光线透过率。当所述有机金属层110的厚度大于100埃时，虽然能够提高电子传输的能力，但是由于其厚度太大，从而增加了OLED器件的厚度，不利于OLED显示器的超薄化设计。
第四、本公开提供的实施例中，阳极10可以采用单层的金属单质构成。为了降低制作成本，也可以采用由氧化铟锌或氧化铟锡(Indium Tin Oxide，ITO)等透明导电材料构成上述阳极10。然而，由于金属单质构成的阳极10，其导电性能优于采用上述透明导电材料构成上述阳极10。因此阳极10可以采用多层薄膜层构成，具体的如图3所示，阳极10可以包括两层透明导电层 101，以及位于上述两层透明导电层101之间的阳极金属层102。阳极金属层102可以采用功函数较高的金属单质银构成，而透明导电层101采用上述透明导电材料构成。这样一来，一方面、通过阳极金属层102可以提高阳极10的导电性能，并通过透明导电层101降低阳极10的制作成本。另一方面、对于如图3所示的顶发射型OLED显示器而言，可以通过阳极金属层102对发光层120射出的光线进行反射，从而可以提高的光线的利用率。
本公开实施例提供一种显示装置，包括如上所述的任意一种OLED器件。具有与前述实施例提供的OLED器件相同的结构和有益效果。由于前述实施例对OLED器件的结构和有益效果进行了详细的描述，此处不再赘述。
需要说明的是，OLED器件按驱动方式可分为PMOLED(Passive Matrix Driving OLED，无源矩阵驱动有机发光二极管)和AMOLED(Active Matrix Driving OLED，有源矩阵驱动有机发光二极管)两种。由于PMOLED器件应用于大尺寸显示器时有其不足的一面，因此，本公开的一些实施例提供的显示装置为有源矩阵型OLED显示器，即，如图4所示，所述该OLED显示器还包括薄膜晶体管30，所述薄膜晶体管30的漏极301可以与阳极相连接，例如与如图3所示的顶发射OLED器件中构成阳极10，且靠近薄膜晶体管30一侧的透明导电层101相连接。
所述薄膜晶体管30包括栅极302、栅绝缘层303、半导体有源层304、源极305和漏极301；且所述薄膜晶体管30可以是顶栅型，也可以是如图4所示的底栅型。当然，所述OLED显示器还包括与所述栅极302电连接的栅线、栅线引线(图中未标识出)等，与所述源极305电连接的数据线、数据线引线(图中未标识出)等。
本公开实施例提供一种OLED器件的制备方法，如图5所示，可以包括：
S101、在透明基板01上，通过构图工艺形成如图1所示的阳极10。
S102、在阳极10上，通过构图工艺形成功能层12。
S103、在透明基板01上(即形成功能层12的透明基板01上)通过构图工艺形成阴极11，其中阴极主要由有机金属层110构成，有机金属层110的功函数为2.9eV～3.7eV。
在本公开实施例中的构图工艺，可指包括光刻工艺，或，包括光刻工艺以及刻蚀步骤，同时还可以包括打印、喷墨等其他用于形成预定图形的工艺； 光刻工艺，包括成膜、曝光、显影等工艺，具体可以利用光刻胶、掩模板、曝光机等形成图形的工艺。可根据本公开中所形成的结构选择相应的构图工艺。
上述透明基板01可以由硬质材料构成，例如玻璃基板、硬质树脂基板，或者是由柔性材料构成的透明基板。并且，上述步骤中在透明基板01上制备各种薄膜层，可以是直接在透明基板01的表面上进行制备，或者，可以是在已经形成有一些薄膜层或薄膜层图案的透明基板01上进行制备，例如步骤S103中，在透明基板01上通过构图工艺形成阴极11是指，在形成功能层12的透明基板01上通过构图工艺形成阴极11。
本公开实施例提供一种OLED器件的制备方法，包括在透明基板上，通过构图工艺形成阴极，其中阴极主要由有机金属层构成，有机金属层的功函数为2.9eV～3.7eV。这样一来，一方面、当OLED器件为顶发射型时，相对于采用金属单质或合金构成的阴极，采用透射率较高的有机金属层作为阴极，可以提高OLED器件的发光效率；另一方面、OLED器件的发光原理，是通过将电子和空穴分别从阴极和阳极注入，并在功能层中复合产生激子而辐射发光，由于构成功能层的有机材料的电子亲和势很小，因此，当有机金属层的功函数在2.9eV～3.7eV之间，该有机金属层构成的阴极的功函数较低，从而有利于提高电子的传输性能，使得OLED器件在发光的过程中，电子能够更有效的注入至功能层中。又一方面，由于有机金属层相对于金属单质或合金而言，成本较低，因此可以降低OLED器件的制作成本。
以下通过具体的实施例对上述OLED器件的制备方法进行详细的举例说明，其中制备方法可以如图6所示。
实施例3
S201、对透明基板01进行清洗，并在该透明基板01上形成阳极10。
具体的，利用溅射设备在透明基板01上依次沉积如图3所示的，厚度为50埃～100埃的透明导电层101，厚度为900埃～1100埃的阳极金属层102，其中可以采用金属单质银构成上述阳极金属层、厚度为50埃～100埃的又一层透明导电层101。
这样一来，一方面、通过阳极金属层102可以提高阳极10的导电性能， 并通过透明导电层101降低阳极10的制作成本。另一方面、对于如图3所示的顶发射型OLED显示器而言，可以通过阳极金属层102对发光层120射出的光线进行反射，从而可以提高的光线的利用率。
S202、在形成有阳极10的基板上，通过蒸镀工艺依次形成如图3所示的，空穴注入层141、空穴传输层140、电子阻挡层21、发光层120、电子传输层130。
具体的，可以将形成由阳极10的基板放置于线源蒸镀腔室中，通过加热蒸镀工艺，依次形成厚度为50埃～100埃的空穴注入层141；厚度为1000埃～1200埃的空穴传输层140；厚度为50埃～120埃的电子阻挡层21；由厚度为850埃～950埃的红色(R)发光单元、厚度为700埃～750埃的绿色(G)发光单元以及厚度为200埃～250埃的蓝色(B)发光单元构成的发光层120；厚度为250埃～300埃的电子传输层130。
S203、在形成有电子传输层130的基板上，通过蒸镀工艺依次形成如图3所示的有机金属层110以及阴极金属层111。
具体的，首先，可以将形成有电子传输层130的基板置于点源蒸镀腔室内，在温度为100℃～240℃的真空条件下，蒸镀由二茂铁或含有二茂铁基的有机导电材料构成的有机金属层110。二茂铁的功函数为3.69eV，相对于常用作OLED器件阴极11的金属银(功函数为4.26eV)而言，二茂铁的功函数较低。因此，当采用二茂铁作为OLED器件的阴极11时，有利于提高电子的传输性能，使得OLED器件在发光的过程中，电子能够更有效的注入至功能层中。
此外，含有二茂铁基的有机导电材料，例如，二茂铁与正丁基锂反应生成的1,1'-二锂代二茂铁，由于金属单质锂的功函数为2.9eV。因此，1,1'-二锂代二茂铁相对于二茂铁而言，功函数更低，作为构成阴极11的材料可以获得更优的效果。
上述有机金属层110的厚度可以为50埃～100埃。当所述有机金属层110的厚度小于50埃时，由于厚度太薄，从而降低了有机金属层110提高电子传输的能力，以及光线透过率。当所述有机金属层110的厚度大于100埃时，虽然能够提高电子传输的能力，但是由于其厚度太大，从而增加了OLED器件的厚度，不利于OLED显示器的超薄化设计。
然后，在有机金属层110上，蒸镀厚度为120埃～160埃的阴极金属层111。由于金属单质镁的功函数较低，而金属单质银的化学性能较稳定。因此在一些实施方式中，上述阴极金属层111采用银镁合金(Mg/Ag)构成。当阴极金属层111的厚度小于120埃时，构成的阴极11的导电率会下降，而当阴极金属层111的厚度大于160埃时，会增加了OLED器件的厚度，不利于OLED显示器的超薄化设计。
需要说明的是，本步骤中的点源蒸镀工艺相对于步骤S202中的线源蒸镀工艺而言，沉积速度低，材料用量少，因此适用于对成本较高的原材料进行的沉积。
S204、在所述阴极金属层111上，利用线源蒸镀工艺形成平坦层20(Capping layer，简称CPL)。
所述平坦层20的厚度为1000埃～1100埃，从而可以提高OLED器件表面的平整度。
通过上述方法形成的OLED器件，阴极11由阴极金属层111和有机金属层110构成，阳极由阳极金属层102和位于阳极金属层102两侧的透明导电层101构成。这样一来，一方面、当OLED器件为顶发射型时，阴极11中包括金属单质或合金，可以提高阴极11的导电性，而阴极11中还包括有机金属层，可以提高OLED器件的发光效率，并且由于构成功能层的有机材料的电子亲和势很小，因此有利于提高电子的传输性能，使得OLED器件在发光的过程中，电子能够更有效的注入至功能层中。另一方面，由于有机金属层相对于金属单质或合金而言，成本较低，且化学性质较稳定。又一方面、阳极10中包括阳极金属层102，可以提高阳极10的导电性能，阳极10中还包括透明导电层101，可以降低阳极10的制作成本。此外、对于顶发射型OLED显示器而言，可以通过阳极金属层102对发光层120射出的光线进行反射，从而可以提高的光线的利用率。
以上所述仅是本公开的示范性实施方式，而非用于限制本公开的保护范围，本公开的保护范围由所附的权利要求确定。
本申请要求于2015年5月27日递交的中国专利申请第201510280602.1号的优先权，在此全文引用上述中国专利申请公开的内容以作为本申请的一部分。

Claims (17)

  1. 一种OLED器件，包括阳极、阴极以及位于所述阳极和所述阴极之间的功能层，
    其中所述阴极包括有机金属层，所述有机金属层包括有机金属。
  2. 根据权利要求1所述的OLED器件，其中所述有机金属层的功函数为2.9eV～3.7eV。
  3. 根据权利要求1或2所述的OLED器件，其中所述有机金属为选自以下的至少一种：二茂铁或含有二茂铁基的有机导电材料。
  4. 根据权利要求1至3中任一项所述的OLED器件，其中所述阴极还包括阴极金属层，所述阴极金属层包括金属。
  5. 根据权利要求4所述的OLED器件，其中所述阴极金属层位于所述有机金属层远离所述阳极的表面上，且与所述有机金属层直接接触。
  6. 根据权利要求4或5所述的OLED器件，其中所述阴极金属层包括：银、镁、铝、钙、锂以及钆中的至少一种。
  7. 根据权利要求1至6中任一项所述的OLED器件，其中所述有机金属层的厚度为50埃～100埃。
  8. 根据权利要求1所述的OLED器件，其中所述阳极包括两层透明导电层，以及位于所述两层透明导电层之间的阳极金属层。
  9. 根据权利要求1至8中任一项所述的OLED器件，其中所述功能层包括发光层。
  10. 根据权利要求9所述的OLED器件，其中所述功能层还包括选自以下的至少一个：电子注入层、电子传输层、空穴注入层和空穴传输层。
  11. 一种显示装置，包括如权利要求1-10任一项所述的OLED器件。
  12. 一种制备OLED器件的方法，包括：
    通过构图工艺在基板上形成阳极、阴极以及位于所述阳极和所述阴极之间的功能层，
    其中所述阴极包括有机金属层，所述有机金属层包括有机金属。
  13. 根据权利要求12所述的方法，其中所述有机金属层的功函数为2.9eV～3.7eV。
  14. 根据权利要求12或13所述的方法，其中有机金属为选自以下的至少一种：二茂铁或含有二茂铁基的有机导电材料。
  15. 根据权利要求12至14中任一项所述的方法，其中所述基板为透明基板。
  16. 根据权利要求12至15中任一项所述的方法，其中，在所述基板上，通过构图工艺形成所述有机金属层，所述有机金属层的厚度为50埃～100埃。
  17. 根据权利要求16所述的方法，其中，在所述有机金属层上，还通过构图工艺形成阴极金属层，所述阴极金属层的厚度为120埃～160埃。
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JP2008111941A (ja) * 2006-10-30 2008-05-15 Sony Corp エレクトロクロミック装置
CN103325948A (zh) * 2012-03-22 2013-09-25 群康科技(深圳)有限公司 电子注入结构及应用其的有机发光二极管结构与显示器
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