WO2016184284A1 - 光控制装置及其制作方法、3d打印系统 - Google Patents

光控制装置及其制作方法、3d打印系统 Download PDF

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Publication number
WO2016184284A1
WO2016184284A1 PCT/CN2016/079467 CN2016079467W WO2016184284A1 WO 2016184284 A1 WO2016184284 A1 WO 2016184284A1 CN 2016079467 W CN2016079467 W CN 2016079467W WO 2016184284 A1 WO2016184284 A1 WO 2016184284A1
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Prior art keywords
thin film
substrate
control device
light control
photoresist
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PCT/CN2016/079467
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English (en)
French (fr)
Inventor
李文波
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京东方科技集团股份有限公司
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Priority to US15/544,051 priority Critical patent/US20170368751A1/en
Publication of WO2016184284A1 publication Critical patent/WO2016184284A1/zh

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C64/00—Additive manufacturing, i.e. manufacturing of three-dimensional [3D] objects by additive deposition, additive agglomeration or additive layering, e.g. by 3D printing, stereolithography or selective laser sintering
    • B29C64/20—Apparatus for additive manufacturing; Details thereof or accessories therefor
    • B29C64/264—Arrangements for irradiation
    • B29C64/286—Optical filters, e.g. masks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C64/00—Additive manufacturing, i.e. manufacturing of three-dimensional [3D] objects by additive deposition, additive agglomeration or additive layering, e.g. by 3D printing, stereolithography or selective laser sintering
    • B29C64/10—Processes of additive manufacturing
    • B29C64/106—Processes of additive manufacturing using only liquids or viscous materials, e.g. depositing a continuous bead of viscous material
    • B29C64/124—Processes of additive manufacturing using only liquids or viscous materials, e.g. depositing a continuous bead of viscous material using layers of liquid which are selectively solidified
    • B29C64/129—Processes of additive manufacturing using only liquids or viscous materials, e.g. depositing a continuous bead of viscous material using layers of liquid which are selectively solidified characterised by the energy source therefor, e.g. by global irradiation combined with a mask
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C64/00—Additive manufacturing, i.e. manufacturing of three-dimensional [3D] objects by additive deposition, additive agglomeration or additive layering, e.g. by 3D printing, stereolithography or selective laser sintering
    • B29C64/10—Processes of additive manufacturing
    • B29C64/106—Processes of additive manufacturing using only liquids or viscous materials, e.g. depositing a continuous bead of viscous material
    • B29C64/124—Processes of additive manufacturing using only liquids or viscous materials, e.g. depositing a continuous bead of viscous material using layers of liquid which are selectively solidified
    • B29C64/129—Processes of additive manufacturing using only liquids or viscous materials, e.g. depositing a continuous bead of viscous material using layers of liquid which are selectively solidified characterised by the energy source therefor, e.g. by global irradiation combined with a mask
    • B29C64/135—Processes of additive manufacturing using only liquids or viscous materials, e.g. depositing a continuous bead of viscous material using layers of liquid which are selectively solidified characterised by the energy source therefor, e.g. by global irradiation combined with a mask the energy source being concentrated, e.g. scanning lasers or focused light sources
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B33—ADDITIVE MANUFACTURING TECHNOLOGY
    • B33Y—ADDITIVE MANUFACTURING, i.e. MANUFACTURING OF THREE-DIMENSIONAL [3-D] OBJECTS BY ADDITIVE DEPOSITION, ADDITIVE AGGLOMERATION OR ADDITIVE LAYERING, e.g. BY 3-D PRINTING, STEREOLITHOGRAPHY OR SELECTIVE LASER SINTERING
    • B33Y30/00—Apparatus for additive manufacturing; Details thereof or accessories therefor
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/02—Local etching

Definitions

  • the present invention relates to the field of 3D printing technology, and in particular, to a light control device, a manufacturing method thereof, and a 3D printing system.
  • 3D printing is a new rapid prototyping manufacturing technology. It is grown by multilayer stacking of printed materials to make a product. 3D printing can realize a special structure that cannot be realized by conventional machining, and can realize simple production of complicated structural parts of arbitrary shapes.
  • the existing 3D printing technology includes hot melt plastic basic technology FDM, laser sintering molding technology and light curing liquid resin selective area curing molding technology.
  • the light-curing liquid resin selective area solidification molding technology realizes 3D printing by controlling the light to be irradiated to a specified area and solidifying the liquid resin in the area. For the selective curing of the photocurable liquid resin, how to control the area of illumination more accurately is an urgent problem to be solved.
  • Embodiments of the present invention provide a light control device, a method of fabricating the same, and a 3D printing system, which are applied to a photocurable liquid resin selective region solidification molding technology, capable of accurately controlling an area of illumination.
  • a light control apparatus for 3D printing of a cured surface of a photocurable liquid material selected region
  • the light control device comprising: a first polarizing plate, an array substrate, a liquid crystal, and an oppositely disposed a substrate and a second polarizing plate;
  • the array substrate includes: a base substrate, a pixel array formed on the base substrate, and a black matrix, and the black matrix is formed at least in a region corresponding to the thin film transistor of the pixel array.
  • the black matrix is formed on a surface of the base substrate facing the opposite substrate, and is made of a metal material.
  • the thin film transistor is a top gate structure formed over the black matrix; and the black matrix and the thin film transistor are separated by an insulating spacer.
  • a method of fabricating a light control device includes: forming an array substrate including a substrate substrate, a pixel array, and a black matrix, wherein the black matrix is formed at least in correspondence with the thin film transistor of the pixel array a region; the array substrate and the opposite substrate are paired with a box, the liquid crystal is filled in the box and sealed, and a first polarizing plate is formed on a surface of the array substrate facing away from the opposite substrate, and a second polarizing plate is formed on a surface of the opposite substrate facing away from the array substrate .
  • forming an array substrate including a substrate substrate, a pixel array, and a black matrix, and forming the black matrix at least in a region corresponding to the thin film transistor of the pixel array includes: sequentially forming a layer on the substrate substrate a metal film, an insulating film, a second metal film and a photoresist; exposing and developing the photoresist, retaining a photoresist in a region corresponding to the thin film transistor, and making a source/drain electrode of the thin film transistor and a region corresponding to the data line
  • the thickness of the photoresist is greater than the thickness of the photoresist in other regions; the exposed first metal film, the insulating film and the second metal film are etched to form a black matrix pattern; the photoresist is ashed, leaving only the source and drain electrodes and data a photoresist corresponding to the region; etching the exposed second metal film to form a pattern of source and drain electrodes and data lines; forming an active
  • forming an array substrate including a substrate substrate, a pixel array, and a black matrix, and forming the black matrix at least in a region corresponding to the thin film transistor of the pixel array includes: sequentially forming a layer on the substrate substrate a metal film, an insulating film, a second metal film, an N+ a-Si film, and a photoresist; exposing and developing the photoresist, leaving a photoresist of a region corresponding to the thin film transistor and the data line, and making the thin film transistor The thickness of the photoresist corresponding to the source/drain electrode and the data line is greater than the thickness of the photoresist in other regions; etching the exposed first metal film, insulating film, second metal film and N+a-Si film to form black Pattern of the matrix; ashing the photoresist, leaving only the photoresist of the source and drain electrodes and the corresponding areas of the data lines; etching the exposed second metal film and the N
  • a 3D printing system comprising: a backlight, a lifter tray, a transparent liquid storage tank, and the light control device of any of the above, wherein the light emitted by the backlight is controlled by light.
  • the device is illuminated to a transparent reservoir to form a printed product, and the lift bar is positioned within the transparent reservoir to move the printed product.
  • one side of the array substrate of the light control device is a light exiting side, and one side of the opposite substrate is a light incident side.
  • the backlight is a backlight that emits ultraviolet light.
  • the 3D printing system further includes: a cooling device for cooling the light control device.
  • Embodiments of the present invention provide a light control device, a method of fabricating the same, and a 3D printing system.
  • the light control device can accurately control a region irradiated by light by using the principle of liquid crystal display, thereby accurately curing a selected region of the photocurable liquid resin.
  • FIG. 1 is a schematic structural view of a light control device according to an embodiment of the present invention.
  • FIG. 2 is a schematic diagram of a pixel structure in an array substrate of the light control device of FIG. 1;
  • step S1 of a method for fabricating a light control device according to an embodiment of the invention
  • step S2 is a schematic structural diagram of step S2 of a method for fabricating a light control device according to an embodiment of the invention
  • FIG. 5 is a schematic structural diagram of step S3 of a method for fabricating a light control device according to an embodiment of the invention.
  • FIG. 6 is a schematic structural diagram of step S4 of a method for fabricating a light control device according to an embodiment of the invention.
  • FIG. 7 is a flowchart S5 of a method for fabricating a light control device according to an embodiment of the present invention. Schematic diagram of the structure
  • FIG. 8 is a schematic structural diagram of step S1 of another method for fabricating a light control device according to an embodiment of the present invention.
  • FIG. 9 is a schematic structural diagram of step S2 of another method for fabricating a light control device according to an embodiment of the present invention.
  • FIG. 10 is a schematic structural diagram of step S3 of another method for fabricating a light control device according to an embodiment of the present invention.
  • FIG. 11 is a schematic structural diagram of step S4 of another method for fabricating a light control device according to an embodiment of the present invention.
  • FIG. 12 is a schematic structural diagram of step S5 of another method for fabricating a light control device according to an embodiment of the invention.
  • FIG. 13 is a schematic structural diagram of a 3D printing system according to an embodiment of the present invention.
  • Figure 14 is a schematic illustration of the incidence of light from a pixel in the 3D printing system of Figure 13.
  • the light control device may include: a first polarizing plate, an array substrate, a liquid crystal, an opposite substrate, and a second polarizing plate disposed in sequence;
  • the array substrate includes: a substrate substrate, a pixel array formed on the base substrate, and a black matrix, black The matrix is formed at least in a region corresponding to the thin film transistor of the pixel array.
  • the light control device includes: a first polarizing plate 21, a second polarizing plate 26, an array substrate, a counter substrate 25 opposed to the array substrate, and an array substrate and a pair
  • the liquid crystal 24 between the substrates 25 is placed.
  • the array substrate includes a base substrate 22, a pixel array 23 formed on the base substrate, and a black matrix 27.
  • the black matrix 27 is formed on the array substrate and located in a region corresponding to the thin film transistor 231 of the pixel array 23.
  • the first polarizing plate 21 is located on a surface of the array substrate facing away from the opposite substrate, and the second polarizing plate 26 is located on a surface of the opposite substrate 25 facing away from the array substrate.
  • the light control device is used for 3D printing of solidification molding of a light curing liquid material selection region.
  • the light control device utilizes the principle of liquid crystal display to accurately control the area irradiated with light, thereby accurately curing the selected region of the photocurable liquid resin. Since it is only required to control the amount of light transmission when curing the selected region of the light-curable liquid resin, the color is not required. Therefore, the opposite substrate is a transparent colorless substrate, and a color film is not required.
  • the black matrix 27 is formed on the array substrate, and the pattern of the black matrix 27 and the layer structure of the thin film transistor 231 can be made in the same manufacturing process (for example, The photolithography process using a mask, referred to as a mask process, is formed, so that the fabrication process of the entire light control device is reduced and the yield is improved without increasing the fabrication process of the array substrate.
  • the black matrix 27 may be located above the thin film transistor 231 or under the thin film transistor 231.
  • the black matrix 27 is formed on the surface of the base substrate 22 facing the opposite substrate 25, that is, below the thin film transistor 231. Since the subsequent fabrication process, particularly the semiconductor layer fabrication temperature is about 300 degrees, the black resin of the conventionally fabricated black matrix 27 cannot withstand high temperatures and is damaged. Therefore, the black matrix 27 in the present embodiment is preferably a metal material.
  • the thin film transistor 231 is a top gate structure, that is, the source and the drain are generally at the lowermost layer and are made of a metal material, and the thin film transistor 231 is formed over the black matrix 27.
  • the black matrix 27 is spaced apart by an insulating spacer layer 28.
  • FIG. 2 is a schematic view showing the structure of a pixel in the array substrate of the light control device of FIG. 1.
  • the position of the pixel structure of the array substrate includes a black matrix 27, an insulating spacer layer, a source electrode 2331, a drain 2332, an N+a-Si layer 234, and an a-Si layer formed on the base substrate 22.
  • An embodiment of the present invention further provides a method for fabricating the above light control device, including:
  • Step 1 Forming an array substrate including a base substrate, a pixel array, and a black matrix, so that the black matrix is formed at least in a region corresponding to the thin film transistor of the pixel array.
  • Step 2 aligning the array substrate and the opposite substrate, filling the liquid crystal in the box and sealing, and forming a first polarizing plate on the surface of the array substrate facing away from the opposite substrate, and forming a second polarization on the surface of the opposite substrate facing away from the array substrate sheet.
  • Step 2 is basically the same as the process of manufacturing the display panel in the prior art, and details are not described herein again.
  • Step one includes the following two production methods.
  • FIG. 3 is a schematic structural diagram of step S1 of a method for fabricating a light control device according to an embodiment of the invention.
  • FIG. 4 is a schematic structural diagram of step S2 of a method for fabricating a light control device according to an embodiment of the invention.
  • FIG. 5 is a schematic structural diagram of step S3 of a method for fabricating a light control device according to an embodiment of the invention.
  • FIG. 6 is a schematic structural diagram of step S4 of a method for fabricating a light control device according to an embodiment of the invention.
  • FIG. 7 is a schematic structural diagram of step S5 of a method for fabricating a light control device according to an embodiment of the invention.
  • the first step of the first method is as shown in FIGS. 3 to 7, and includes:
  • step S1 a first metal thin film 271, an insulating film 281, a second metal thin film 233, and a photoresist 230 are sequentially formed on the base substrate 22.
  • step S2 the photoresist 230 is exposed and developed, and the photoresist 230 is exposed and developed by using a double adjustment mask (halftone mask or gray tone mask), and the corresponding region of the thin film transistor and the data line are reserved.
  • the photoresist 230 of the region (the region other than G2 in the figure), and the thickness of the photoresist 230 of the source-drain electrode corresponding region (G3) and the data line corresponding region (G3) of the thin film transistor is larger than that of the other region G1.
  • the thickness of the glue 230 is larger than that of the other region G1.
  • step S3 the exposed first metal thin film 271, insulating film 281 and second metal thin film 233 are etched to form a structure as shown in FIG. 5, at which time a black matrix pattern is formed.
  • the exposed second metal film 233 is first etched by wet etching
  • the insulating film 281 is etched by dry etching
  • the first metal film 271 is etched by wet etching.
  • step S4 the photoresist 230 is ashed, and only the photoresist 230 corresponding to the source/drain electrode region G3 and the data line region G3 is left.
  • step S5 the exposed second metal film 233 is etched to form a pattern of source and drain electrodes and data lines, that is, the structure in FIG.
  • Step S6 (not shown), forming a pattern including an active layer, a gate insulating layer, a gate, a gate line, a passivation layer, and a pixel electrode on the basis of FIG. 7 to form a final array substrate structure, in a manner of forming Similar to the prior art substrate, it will not be described here.
  • the black matrix, the insulating spacer layer and the source and drain electrodes are formed in a mask process during the above fabrication process. In, the production process is saved.
  • FIG. 8 is a schematic structural diagram of step S1 of another method for fabricating a light control device according to an embodiment of the invention.
  • FIG. 9 is a schematic structural diagram of step S2 of another method for fabricating a light control device according to an embodiment of the invention.
  • FIG. 10 is a schematic structural diagram of step S3 of another method for fabricating a light control device according to an embodiment of the invention.
  • FIG. 11 is a schematic structural diagram of step S4 of another method for fabricating a light control device according to an embodiment of the invention.
  • FIG. 12 is a schematic structural diagram of step S5 of another method for fabricating a light control device according to an embodiment of the invention.
  • the first step of the second method is as shown in FIG. 8 to FIG. 12, and includes:
  • step S1 a first metal thin film 271, an insulating film 281, a second metal thin film 233, an N+a-Si thin film 234, and a photoresist 230 are sequentially formed on the base substrate 22.
  • step S2 the photoresist 230 is exposed and developed, and the photoresist 230 is exposed and developed by using a double adjustment mask (halftone mask or gray tone mask), and the corresponding region of the thin film transistor and the data line are reserved.
  • the photoresist 230 of the region (the region other than G2 in the drawing) has a thickness of the photoresist 230 of the source-drain electrode corresponding region G3 and the data line corresponding region G3 of the thin film transistor is larger than that of the other region G1 photoresist 230.
  • step S3 the exposed first metal thin film 271, insulating film 281, second metal thin film 233, and N+a-Si thin film 234 are etched to form a structure as shown in FIG. 10, at which time a black matrix pattern is formed.
  • the exposed N+a-Si layer 234 is first etched by dry etching, and then the second metal film 233 is etched by wet etching, and then the insulating film 281 is etched by dry etching.
  • the first metal thin film 271 is etched by wet etching.
  • step S4 the photoresist 230 is ashed, and only the photoresist 230 corresponding to the source/drain electrode region G3 and the data line region G3 is retained.
  • step S5 the exposed second metal thin film 233 and the N+ a-Si thin film 234 are etched to form a pattern of the source/drain electrodes, the N+a-Si layer 234, and the data lines, that is, the structure in FIG.
  • the N+a-Si layer 234 is first etched by dry etching during etching, and the second metal film 233 is etched by wet etching.
  • Step S6 (not shown), forming a pattern including an active layer (a-Si portion), a gate insulating layer, a gate electrode, a gate line, a passivation layer, and a pixel electrode on the basis of FIG. 12 to form a final array Base
  • a pattern including an active layer (a-Si portion), a gate insulating layer, a gate electrode, a gate line, a passivation layer, and a pixel electrode on the basis of FIG. 12 to form a final array Base
  • the structure of the board is similar to that of the prior art substrate and will not be described here.
  • the black matrix, the insulating spacer layer, the source and drain electrodes, and the N+a-Si are formed in a mask process, which saves the manufacturing process.
  • FIG. 13 is a schematic structural diagram of a 3D printing system according to an embodiment of the present invention.
  • the 3D printing system may include: a backlight, a lifting rod holder, a transparent liquid storage tank and the above-mentioned light control device, and the light emitted by the backlight is transmitted through the light control device to the transparent liquid storage tank to form a printing product, and the lifting rod tray Located in a transparent reservoir to move the printed product.
  • the 3D printing system includes a backlight 51, a lifter bar 52, a transparent reservoir 53 and the above-described light control device 54.
  • the light emitted from the backlight 51 is transmitted to the transparent reservoir 53 through the light control device 54.
  • the lifter bar 52 is located within the transparent reservoir 53.
  • Figure 14 is a schematic illustration of the incidence of light from a pixel in the 3D printing system of Figure 13. Since the opposite substrate of the light control device 54 is a colorless transparent substrate, if light is emitted from the opposite substrate, there is a certain degree of divergence. Therefore, as shown in FIG. 14, in order to more accurately control the illumination region, the light control device 54 One side of the array substrate is the light exit side, and one side of the opposite substrate is the light incident side.
  • the pixel structure and the black matrix on the array substrate enable the illumination area to be more accurate.
  • the opposite substrate which is also a thin film transistor of a top gate type structure
  • the top gate functions as a light blocking function to avoid the influence of light on the active layer of the thin film transistor.
  • a bottom gate type thin film transistor can also be used. In this case, as long as a light blocking layer is further formed, the structure is slightly complicated.
  • the backlight 51 is a backlight that emits ultraviolet light.
  • the 3D printing system may also include a cooling device 55, such as a fan, for cooling the light control device 54.
  • a cooling device 55 such as a fan
  • the 3D CAD entity data model or the surface data model file of the product is first converted into a photo-curing stereoscopic file format (.stl). Then, the corresponding software is used to take out a series of slices of the set thickness from the .stl file, and then the information of each of the above layers is formed into a two-dimensional data pattern and transmitted to the computer. After the image processing (the area of the display shape is white and the non-display area is set to black), a signal corresponding to the pattern required for each slice is input to the light control device 54, and the desired image is directly projected by the light control device 54. Polymerizable liquid into the transparent liquid storage tank 53 Exposure curing is performed on the bulk material to form a printed product.
  • a photo-curing stereoscopic file format .stl
  • the first sheet of the polymerizable liquid material is injected into the transparent liquid storage tank 53, the lifting rod holder 52 is lowered to contact the polymerizable liquid material, and the computer transmits the signal corresponding to the first layer to the computer.
  • the light control device 54 cures the region where the polymeric liquid material is irradiated. After curing, the lifter bar 52 is lifted, and the cured pattern is lifted with the lifter bar 52 (the first film is printed).
  • the polymerization liquid material of the next sheet amount is re-injected so that the amount of the polymer liquid material in the transparent liquid storage tank 53 reaches the amount of the next sheet, and the second layer is printed as described above. This is repeated in order until all the layers have been printed and the overlay processing is performed while printing until the entire part is completed.

Abstract

一种光控制装置及其制作方法、3D打印系统。光控制装置包括：依次设置的第一偏振片（21）、阵列基板、液晶（24）、对置基板（25）和第二偏振片（26）；阵列基板包括：衬底基板（22）、形成在衬底基板（22）上的像素阵列（23）及黑矩阵（27），黑矩阵（27）至少形成在与像素阵列（23）的薄膜晶体管（231）对应的区域。光控制装置用于光固化液态材料选择区域固化成型的3D打印。该光控制装置运用液晶显示的原理能够准确地控制光线照射的区域，从而准确地对光固化液态树脂选择区域进行固化。

Description

光控制装置及其制作方法、3D打印系统
本申请要求2015年5月15日递交的中国专利申请第201510251241.8号的优先权，在此全文引用上述中国专利申请所公开的内容以作为本申请的一部分。
技术领域
本发明涉及3D打印技术领域，尤其涉及光控制装置及其制作方法、3D打印系统。
背景技术
3D打印是新型快速成型制造技术。它通过打印材料的多层叠加生长以制造产品。3D打印能实现传统机械加工无法实现的特殊结构，可以实现任意形状的复杂结构部件的简单化生产。现有的3D打印技术包括热熔塑胶基础技术FDM、激光烧结成型技术及光固化液态树脂选择区域固化成型技术。光固化液态树脂选择区域固化成型技术通过控制光线照射到指定的区域，将该区域的液态树脂固化成型，从而实现3D打印。对于光固化液态树脂选择区域固化成型技术，如何更准确地控制光照的区域是亟待解决的问题。
发明内容
本发明的实施例提供光控制装置及其制作方法、3D打印系统，应用于光固化液态树脂选择区域固化成型技术，能够准确地控制光照的区域。
根据本发明的第一方面，提供了一种光控制装置，用于光固化液态材料选择区域固化成型的3D打印，光控制装置包括：依次设置的第一偏振片、阵列基板、液晶、对置基板和第二偏振片；阵列基板包括：衬底基板、形成在衬底基板上的像素阵列及黑矩阵，黑矩阵至少形成在与像素阵列的薄膜晶体管对应的区域。
在本发明的实施例中，黑矩阵形成在衬底基板面向对置基板的表面上，且由金属材料制成。
在本发明的实施例中，薄膜晶体管为顶栅结构，形成在黑矩阵上方；黑矩阵与薄膜晶体管之间间隔有绝缘间隔层。
根据本发明的第二方面，还提供了一种光控制装置制作方法，包括：形成包括衬底基板、像素阵列及黑矩阵的阵列基板，使黑矩阵至少形成在与像素阵列的薄膜晶体管对应的区域；将阵列基板和对置基板对盒，在盒内填充液晶并密封，并在阵列基板背离对置基板的表面形成第一偏振片，在对置基板背离阵列基板的表面形成第二偏振片。
在本发明的实施例中，形成包括衬底基板、像素阵列及黑矩阵的阵列基板，使黑矩阵至少形成在与像素阵列的薄膜晶体管对应的区域的步骤包括：在衬底基板上依次形成第一金属薄膜、绝缘薄膜、第二金属薄膜和光刻胶；对光刻胶进行曝光显影，保留薄膜晶体管对应的区域的光刻胶，且使薄膜晶体管的源漏电极及数据线对应的区域的光刻胶厚度大于其他区域光刻胶的厚度；刻蚀暴露出来的第一金属薄膜、绝缘薄膜和第二金属薄膜，形成黑矩阵的图形；灰化光刻胶，只保留源漏电极及数据线对应的区域的光刻胶；刻蚀暴露出的第二金属薄膜，形成源漏电极及数据线的图形；形成有源层、栅绝缘层、栅极、栅线、钝化层及像素电极的图形。
在本发明的实施例中，形成包括衬底基板、像素阵列及黑矩阵的阵列基板，使黑矩阵至少形成在与像素阵列的薄膜晶体管对应的区域的步骤包括：在衬底基板上依次形成第一金属薄膜、绝缘薄膜、第二金属薄膜、N+a-Si薄膜和光刻胶；对光刻胶进行曝光显影，保留薄膜晶体管及数据线对应的区域的光刻胶，且使薄膜晶体管的源漏电极及数据线对应的区域的光刻胶厚度大于其他区域光刻胶的厚度；刻蚀暴露出来的第一金属薄膜、绝缘薄膜、第二金属薄膜和N+a-Si薄膜，形成黑矩阵的图形；灰化光刻胶，只保留源漏电极及数据线对应的区域的光刻胶；刻蚀暴露出的第二金属薄膜和N+a-Si薄膜，形成源漏电极、N+a-Si层及数据线的图形；形成有源层、栅绝缘层、栅极、栅线、钝化层及像素电极的图形。
根据本发明的第三方面，还提供了一种3D打印系统，包括：背光源、升降杆托板、透明储液槽及上述任一项的光控制装置，背光源发出的光透过光控制装置照射到透明储液槽以形成打印产品，升降杆托板位于透明储液槽内以移动打印产品。
在本发明的实施例中，光控制装置的阵列基板的一侧为出光侧，对置基板的一侧为入光侧。
在本发明的实施例中，背光源为发出紫外光的背光源。
在本发明的实施例中，3D打印系统还包括：用于冷却光控制装置的冷却装置。
本发明的实施例提供光控制装置及其制作方法、3D打印系统，光控制装置运用液晶显示的原理能够准确地控制光线照射的区域，从而准确地对光固化液态树脂选择区域进行固化。
附图说明
为了更清楚地说明本发明的实施例的技术方案，下面将对实施例的附图进行简要说明，应当知道，以下描述的附图仅仅涉及本发明的一些实施例，而非对本发明的限制，其中：
图1是根据本发明实施例的一种光控制装置结构示意图；
图2是图1中的光控制装置的阵列基板中的一个像素结构示意图；
图3是根据本发明实施例的一种光控制装置制作方法的步骤S1完成后的结构示意图；
图4是根据本发明实施例的一种光控制装置制作方法的步骤S2完成后的结构示意图；
图5是根据本发明实施例的一种光控制装置制作方法的步骤S3完成后的结构示意图；
图6是根据本发明实施例的一种光控制装置制作方法的步骤S4完成后的结构示意图；
图7是根据本发明实施例的一种光控制装置制作方法的步骤S5完成后 的结构示意图；
图8是根据本发明实施例的另一种光控制装置制作方法的步骤S1完成后的结构示意图；
图9是根据本发明实施例的另一种光控制装置制作方法的步骤S2完成后的结构示意图；
图10是根据本发明实施例的另一种光控制装置制作方法的步骤S3完成后的结构示意图；
图11是根据本发明实施例的另一种光控制装置制作方法的步骤S4完成后的结构示意图；
图12根据本发明实施例的另一种光控制装置制作方法的步骤S5完成后的结构示意图；
图13是根据本发明实施例的一种3D打印系统结构示意图；
图14是图13中3D打印系统中一个像素的光线入射的示意图。
具体实施方式
下面结合附图和实施例，对本发明的具体实施方式作进一步详细描述。以下实施例用于说明本发明，但不用来限制本发明的范围。
图1是根据本发明实施例的一种光控制装置结构示意图。光控制装置可以包括：依次设置的第一偏振片、阵列基板、液晶、对置基板和第二偏振片；阵列基板包括：衬底基板、形成在衬底基板上的像素阵列及黑矩阵，黑矩阵至少形成在与像素阵列的薄膜晶体管对应的区域。
在本发明的实施例中，如图1所示，光控制装置包括：第一偏振片21、第二偏振片26、阵列基板、与阵列基板对置的对置基板25以及位于阵列基板和对置基板25之间的液晶24。阵列基板包括：衬底基板22、形成在衬底基板之上的像素阵列23及黑矩阵27。黑矩阵27形成在阵列基板上且位于像素阵列23的薄膜晶体管231对应的区域。第一偏振片21位于阵列基板背离对置基板的表面，第二偏振片26位于对置基板25背离阵列基板的表面。该光控制装置用于光固化液态材料选择区域固化成型的3D打印。
在本发明的实施例中，光控制装置运用液晶显示的原理能够准确地控制光线照射的区域，从而准确地对光固化液态树脂选择区域进行固化。由于在对光固化液态树脂选择区域进行固化时只需要控制透光量，对颜色没有要求，因此，对置基板为透明无色的基板即可，不需要彩膜。由于对置基板上不需要彩膜，为了减少对置基板的制作工艺，黑矩阵27形成在阵列基板上，可以使黑矩阵27的图形与薄膜晶体管231的某层结构在同一次制作工艺(例如，使用了掩模(mask)的光刻工艺，简称mask工艺)中形成，这样在既不增加阵列基板的制作工艺的情况下，减少了整个光控制装置的制作工艺，提高了产率。
理论上讲，黑矩阵27可以位于薄膜晶体管231之上，也可以位于薄膜晶体管231的下方。为了方便与薄膜晶体管231的某层结构在同一次mask工艺中形成，黑矩阵27形成在衬底基板22面向对置基板25的表面，即薄膜晶体管231的下方。由于后续制作工艺，特别是半导体层制作温度在300度左右，传统制作黑矩阵27的黑色树脂将无法承受高温，会受到破坏，因此本实施例中黑矩阵27优选为金属材料。
在本发明的实施例中，薄膜晶体管231为顶栅结构，即源极和漏极一般在最下层且为金属材料，并且，薄膜晶体管231形成在黑矩阵27的上方。黑矩阵27与之间间隔有绝缘间隔层28。
图2是图1中的光控制装置的阵列基板中的一个像素结构示意图。如图2所示，阵列基板的像素结构的位置包括形成在衬底基板22上的黑矩阵27、绝缘间隔层、源极2331、漏极2332、N+a-Si层234、a-Si层235、栅绝缘层236、栅极237、钝化层238、过孔2381和像素电极239。
本发明的实施例还提供了上述光控制装置的制作方法，包括：
步骤一：形成包括衬底基板、像素阵列及黑矩阵的阵列基板，使黑矩阵至少形成在与像素阵列的薄膜晶体管对应的区域。
步骤二：将阵列基板和对置基板对盒，在盒内填充液晶并密封，并在阵列基板背离对置基板的表面形成第一偏振片，在对置基板背离阵列基板的表面形成第二偏振片。
其中步骤二与现有技术中制作显示面板的工艺基本相同，此处不再赘述。步骤一包括以下两种制作方式。
图3是根据本发明实施例的一种光控制装置制作方法的步骤S1完成后的结构示意图。图4是根据本发明实施例的一种光控制装置制作方法的步骤S2完成后的结构示意图。图5是根据本发明实施例的一种光控制装置制作方法的步骤S3完成后的结构示意图。图6是根据本发明实施例的一种光控制装置制作方法的步骤S4完成后的结构示意图。图7是根据本发明实施例的一种光控制装置制作方法的步骤S5完成后的结构示意图。
即方式一的步骤一如图3～7所示，包括：
步骤S1，在衬底基板22上依次形成第一金属薄膜271、绝缘薄膜281、第二金属薄膜233和光刻胶230。
步骤S2，对光刻胶230进行曝光显影，具体采用双调掩膜板(半调掩膜板或灰调掩膜板)对光刻胶230进行曝光显影，保留薄膜晶体管对应区域及数据线对应区域(图中除G2外的区域)的光刻胶230，且使薄膜晶体管的源漏电极对应区域(G3)和数据线对应区域(G3)的光刻胶230的厚度大于其他区域G1光刻胶230厚度。
步骤S3，刻蚀暴露出来的第一金属薄膜271、绝缘薄膜281和第二金属薄膜233，形成如图5所示的结构，此时形成了黑矩阵的图形。刻蚀时先用湿法刻蚀法刻蚀暴露出的第二金属薄膜233，再用干法刻蚀法刻蚀绝缘薄膜281，最后用湿法刻蚀法刻蚀第一金属薄膜271。
步骤S4，灰化光刻胶230，只保留源漏电极区域G3和数据线区域G3对应的光刻胶230。
步骤S5，刻蚀暴露出的第二金属薄膜233，形成源漏电极及数据线的图形，即图7中的结构。
步骤S6(未图示)，在图7的基础上形成包括有源层、栅绝缘层、栅极、栅线、钝化层及像素电极的图形，以形成最终的阵列基板结构，其形成方式与现有技术基板类似，此处不再赘述。
上述制作过程中黑矩阵、绝缘间隔层和源漏电极在一次mask工艺中形 成，节省了制作工序。
图8是根据本发明实施例的另一种光控制装置制作方法的步骤S1完成后的结构示意图。图9是根据本发明实施例的另一种光控制装置制作方法的步骤S2完成后的结构示意图。图10是根据本发明实施例的另一种光控制装置制作方法的步骤S3完成后的结构示意图。图11是根据本发明实施例的另一种光控制装置制作方法的步骤S4完成后的结构示意图。图12根据本发明实施例的另一种光控制装置制作方法的步骤S5完成后的结构示意图。
即方式二的步骤一如图8～12所示，包括：
步骤S1，在衬底基板22上依次形成第一金属薄膜271、绝缘薄膜281、第二金属薄膜233、N+a-Si薄膜234和光刻胶230。
步骤S2，对光刻胶230进行曝光显影，具体采用双调掩膜板(半调掩膜板或灰调掩膜板)对光刻胶230进行曝光显影，保留薄膜晶体管对应区域及数据线对应区域(图中除G2外的区域)的光刻胶230，且使薄膜晶体管的源漏电极对应区域G3和数据线对应区域G3的光刻胶230的厚度大于其他区域G1光刻胶230厚度。
步骤S3，刻蚀暴露出来的第一金属薄膜271、绝缘薄膜281、第二金属薄膜233和N+a-Si薄膜234，形成如图10所示的结构，此时形成了黑矩阵的图形。刻蚀时先用干刻蚀法刻蚀暴露出的N+a-Si层234，再湿法刻蚀法刻蚀第二金属薄膜233，接着用干法刻蚀法刻蚀绝缘薄膜281，最后用湿法刻蚀法刻蚀第一金属薄膜271。
步骤S4，灰化光刻胶230，只保留源漏电极区域G3及数据线区域G3对应的光刻胶230。
步骤S5，刻蚀暴露出的第二金属薄膜233和N+a-Si薄膜234，形成源漏电极、N+a-Si层234及数据线的图形，即图12中的结构。刻蚀时先用干法刻蚀法刻蚀N+a-Si层234，再湿法刻蚀法刻蚀第二金属薄膜233。
步骤S6(未图示)，在图12的基础上形成包括有源层(a-Si部分)、栅绝缘层、栅极、栅线、钝化层及像素电极的图形，以形成最终的阵列基 板结构，其形成方式与现有技术基板类似，此处不再赘述。
上述制作过程中黑矩阵、绝缘间隔层、源漏电极和N+a-Si在一次mask工艺中形成，节省了制作工序。
图13是根据本发明实施例的一种3D打印系统结构示意图。3D打印系统可以包括：背光源、升降杆托板、透明储液槽及上述的光控制装置，背光源发出的光透过光控制装置照射到透明储液槽以形成打印产品，升降杆托板位于透明储液槽内以移动打印产品。
在本发明的实施例中，如图13所示，3D打印系统包括：背光源51、升降杆托板52、透明储液槽53及上述的光控制装置54。背光源51发出的光透过光控制装置54照射到透明储液槽53。升降杆托板52位于透明储液槽53内。
图14是图13中3D打印系统中一个像素的光线入射的示意图。因为光控制装置54的对置基板为无色透明基板，若光从对置基板出射会有一定程度的发散，因此，如图14所示，为了更加精确地控制光照区域，光控制装置54的阵列基板的一侧为出光侧，对置基板的一侧为入光侧。由于阵列基板上的像素结构和黑矩阵能够使光照区域更精确。由于光是从对置基板射入，这也是采用顶栅型结构的薄膜晶体管的原因，顶部栅极起到挡光作用，避免光照对薄膜晶体管的有源层的影响。当然也可以采用底栅型的薄膜晶体管，此时，只要再做一层挡光层即可，结构稍复杂。
由于需要固化可聚合材料，优选地背光源51为发出紫外光的背光源。
该3D打印系统还可以包括：用于冷却光控制装置54的冷却装置55，如：风扇。
在进行3D打印时先将产品的三维CAD实体数据模型或曲面数据模型文件转换成光固化立体造型文件格式(.stl)。再用对应的软件从.stl文件取出设定厚度的一系列片层，然后将上述每一片层的信息形成二维数据图形传到计算机中。通过图像处理后(显示形状的区域为白色，非显示区域设为黑色)，将对应于每一片层所需要的图形的信号输入光控制装置54，通过光控制装置54将所需要的图像直接投射到透明储液槽53中的可聚合液 体材料上进行曝光固化以形成打印产品。
在具体打印时，先第一个片层用量可聚合液体材料注入透明储液槽53，下放升降杆托板52，使其接触可聚合液体材料，计算机将第一层片层对应的信号传输至光控制装置54，以使聚合液体材料被照射的区域固化。固化后提起升降杆托板52，被固化的图案随着升降杆托板52被提起(第一片层打印完成)。再注入下一个片层用量的聚合液体材料，使透明储液槽53中的聚合液体材料达到下一个片层的用量，按上述方法打印第二层。依次重复直到打印完所有层并在打印的同时进行叠加处理，直到完成整个部件。
以上实施方式仅用于说明本发明，而并非对本发明的限制，有关技术领域的普通技术人员，在不脱离本发明的精神和范围的情况下，还可以做出各种变化和变型，因此所有等同的技术方案也属于本发明的范畴，本发明的专利保护范围应由权利要求限定。

Claims (10)

  1. 一种光控制装置，用于光固化液态材料选择区域固化成型的3D打印，所述光控制装置包括：依次设置的第一偏振片、阵列基板、液晶、对置基板和第二偏振片；所述阵列基板包括：衬底基板、形成在衬底基板上的像素阵列及黑矩阵，所述黑矩阵至少形成在与所述像素阵列的薄膜晶体管对应的区域。
  2. 如权利要求1所述的光控制装置，其中，所述黑矩阵形成在所述衬底基板面向所述对置基板的表面上，且由金属材料制成。
  3. 如权利要求2所述的光控制装置，其中，所述薄膜晶体管为顶栅结构，形成在所述黑矩阵上方；所述黑矩阵与所述薄膜晶体管之间间隔有绝缘间隔层。
  4. 一种光控制装置制作方法，包括：
    形成包括衬底基板、像素阵列及黑矩阵的阵列基板，使所述黑矩阵至少形成在与所述像素阵列的薄膜晶体管对应的区域；
    将所述阵列基板和对置基板对盒，在盒内填充液晶并密封，并在阵列基板背离对置基板的表面形成第一偏振片，在对置基板背离阵列基板的表面形成第二偏振片。
  5. 如权利要求4所述的光控制装置制作方法，其中，所述形成包括衬底基板、像素阵列及黑矩阵的阵列基板，使所述黑矩阵至少形成在与所述像素阵列的薄膜晶体管对应的区域的步骤包括：
    在衬底基板上依次形成第一金属薄膜、绝缘薄膜、第二金属薄膜和光刻胶；
    对光刻胶进行曝光显影，保留薄膜晶体管及数据线对应的区域的光刻胶，且使薄膜晶体管的源漏电极及数据线对应的区域的光刻胶厚度大于其他区域光刻胶的厚度；
    刻蚀暴露出来的第一金属薄膜、绝缘薄膜和第二金属薄膜，形成黑矩阵的图形；
    灰化光刻胶，只保留源漏电极及数据线对应的区域的光刻胶；
    刻蚀暴露出的第二金属薄膜，形成源漏电极及数据线的图形；
    形成有源层、栅绝缘层、栅极、栅线、钝化层及像素电极的图形。
  6. 如权利要求4所述的光控制装置制作方法，其中，所述形成包括衬底基板、像素阵列及黑矩阵的阵列基板，使所述黑矩阵至少形成在与所述像素阵列的薄膜晶体管对应的区域的步骤包括：
    在衬底基板上依次形成第一金属薄膜、绝缘薄膜、第二金属薄膜、N+a-Si薄膜和光刻胶；
    对光刻胶进行曝光显影，保留薄膜晶体管及数据线对应的区域的光刻胶，且使薄膜晶体管的源漏电极及数据线对应的区域的光刻胶厚度大于其他区域光刻胶的厚度；
    刻蚀暴露出来的第一金属薄膜、绝缘薄膜、第二金属薄膜和N+a-Si薄膜，形成黑矩阵的图形；
    灰化光刻胶，只保留源漏电极及数据线对应的区域的光刻胶；
    刻蚀暴露出的第二金属薄膜和N+a-Si薄膜，形成源漏电极、N+a-Si层及数据线的图形；
    形成有源层、栅绝缘层、栅极、栅线、钝化层及像素电极的图形。
  7. 一种3D打印系统，包括：背光源、升降杆托板、透明储液槽及权利要求1～3中任一项所述的光控制装置，所述背光源发出的光透过所述光控制装置照射到所述透明储液槽以形成打印产品，所述升降杆托板位于所述透明储液槽内以移动打印产品。
  8. 如权利要求7所述的3D打印系统，其中，所述光控制装置的阵列基板的一侧为出光侧，对置基板的一侧为入光侧。
  9. 如权利要求7所述的3D打印系统，其中，所述背光源为发出紫外光的背光源。
  10. 如权利要求7～9中任一项所述的3D打印系统，还包括：用于冷却所述光控制装置的冷却装置。
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