WO2016184223A1 - Harmonic filter suppressing high frequency higher harmonic of acoustic surface transverse wave - Google Patents

Harmonic filter suppressing high frequency higher harmonic of acoustic surface transverse wave Download PDF

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Publication number
WO2016184223A1
WO2016184223A1 PCT/CN2016/075772 CN2016075772W WO2016184223A1 WO 2016184223 A1 WO2016184223 A1 WO 2016184223A1 CN 2016075772 W CN2016075772 W CN 2016075772W WO 2016184223 A1 WO2016184223 A1 WO 2016184223A1
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transverse wave
acoustic
wave resonator
finger
wave
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PCT/CN2016/075772
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French (fr)
Chinese (zh)
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周卫
朱明�
田亚睿
曾武
付金桥
马晋毅
陈峻
许东辉
冉川云
欧阳锋
黎亮
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中国电子科技集团公司第二十六研究所
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Priority claimed from PCT/CN2015/079382 external-priority patent/WO2016090851A1/en
Application filed by 中国电子科技集团公司第二十六研究所 filed Critical 中国电子科技集团公司第二十六研究所
Publication of WO2016184223A1 publication Critical patent/WO2016184223A1/en

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/64—Filters using surface acoustic waves

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  • the invention relates to a surface acoustic wave device, in particular to a high-bandout high-frequency surface-mounted acoustic surface transverse wave resonance filter, which is suitable for high-frequency narrow-band signal processing system with a frequency above 2 GHz, and belongs to the technical field of surface acoustic wave devices.
  • a surface acoustic wave transverse resonator comprising a quartz substrate and an intermediate shorting gate structure disposed between the transducers.
  • the acoustic surface transverse wave excited on the piezoelectric quartz substrate has a sound velocity 1.6 times higher than that of the Rayleigh type surface acoustic wave under the same process conditions, and the sound velocity on the piezoelectric quartz substrate can reach about 5000 m/s, so it is more suitable.
  • the surface acoustic wave transverse wave resonator filter is a narrow-band high-band-out-of-band suppression resonant filter developed on the basis of a surface acoustic wave transverse wave resonator. Compared with the resonator, it not only requires frequency, bandwidth, loss, etc., but is used as a filter. Inhibition performance other than passband is also required. Due to the limitation of its topological structure, the acoustic surface shear wave resonance has limited out-of-band rejection and cannot meet the high out-of-band rejection performance requirements.
  • High-bandout high-frequency surface mount acoustic surface transverse wave resonant filter including a chip packaged in a surface mount housing, the chip is provided with a surface acoustic wave transverse wave resonator filter, characterized in that: the acoustic surface transverse wave resonance filter
  • the two sets of acoustic surface shear wave resonator filters comprise two reflectors disposed on the piezoelectric substrate, two interdigital transducers and an intermediate shorting grid, and the intermediate shorting grid is located between the two interdigital transducers, two Reflection
  • the two sets of acoustic surface shear wave resonator filters are connected end to end; that is, one of the interdigital transducers of one set of surface acoustic wave transverse wave resonators resonates with the other set of acoustic surface transverse waves through the signal line An interdigital transducer connection of the filter.
  • the width of the finger of the intermediate short-circuit grid is smaller than the width of the finger of the interdigital transducer; two sets of surface acoustic wave transverse wave resonator filters are arranged along the sound propagation direction and separated by a certain distance; or are arranged in parallel and separated by a certain distance.
  • High-bandout high-frequency surface mount acoustic surface transverse wave resonant filter including a chip packaged in a surface mount housing, the chip is provided with a surface acoustic wave transverse wave resonator filter, characterized in that: the acoustic surface transverse wave resonance filter
  • the device is two groups, wherein the group A surface acoustic wave transverse wave resonance filter comprises two reflectors disposed on the piezoelectric substrate, a two-finger transducer and an intermediate short-circuit grid, and the intermediate short-circuit grid is located between the two-finger transducers.
  • the two reflectors are respectively located outside the two-finger transducers;
  • Group B surface acoustic wave transverse wave resonator filter comprises two reflectors, a three-finger finger transducer and two intermediate short-circuit grids arranged on the piezoelectric substrate and according to the reflector, the interdigital transducer, the intermediate short-circuit grid, the interdigital transducer , intermediate short-circuit grid, interdigital transducer, reflector arrangement; wherein the centered interdigital transducer acts as an input/output transducer for group B surface acoustic wave transverse wave resonator filters, and interdigital transducers on both sides Connected together by signal lines as output/input transducers for Group B surface acoustic wave transverse wave resonator filters;
  • Two sets of surface acoustic wave transverse wave resonator filters are connected end to end, that is, an interdigital transducer of group A surface acoustic wave transverse wave resonator filter is connected to the output transducer or input transducer of group B surface acoustic wave transverse wave resonator filter through signal line. .
  • the width of the finger of the intermediate short-circuit grid is smaller than the width of the finger of the interdigital transducer; two sets of surface acoustic wave transverse wave resonator filters are arranged in parallel and separated by a certain distance.
  • High-bandout high-frequency surface mount acoustic surface transverse wave resonant filter including a chip packaged in a surface mount housing, the chip is provided with a surface acoustic wave transverse wave resonator filter, characterized in that: the acoustic surface transverse wave resonance filter
  • the three sets of acoustic surface shear wave resonator filters comprise two reflectors, two interdigital transducers and an intermediate shorting grid disposed on the piezoelectric substrate, and the intermediate shorting grid is located between the two interdigital transducers, two The reflectors are respectively located outside the two-finger transducers; three sets of surface acoustic wave transverse wave resonator filters are connected end to end, that is, an interdigital transducer of the first set of surface acoustic wave transverse wave resonator filters passes the signal line and the second group of acoustic surface transverse waves One interdigital transducer of the resonant filter is connected, and the other interdigit
  • the width of the finger of the intermediate shorting grid is smaller than the width of the finger of the interdigital transducer; two sets of acoustic surface shear wave resonator filters along the sound The wave propagation directions are connected and separated by a certain distance.
  • the third set of acoustic surface shear wave resonator filters are connected in parallel with the previous two groups and separated by a certain distance; or three sets of surface acoustic wave transverse wave resonator filters are connected in parallel with each other and separated by a certain distance.
  • each set of surface acoustic wave transverse wave resonator filters are respectively located on different interdigital transducers.
  • Each intermediate shorting grid and the interdigital transducer can be linked at the same end or at different ends.
  • All surface acoustic wave resonator filters are packaged in the same type of surface mount enclosure with the graphics side facing up and connected to the surface mount housing with leads.
  • the piezoelectric substrate material is a weak piezoelectric material such as a quartz substrate.
  • the present invention has the following beneficial effects:
  • the surface acoustic wave mode of the intermediate short-circuit gate structure is adopted in the invention, and the acoustic wave surface transverse wave velocity is excited by 1.6 times higher than the Rayleigh-type surface acoustic wave velocity, which is particularly suitable for high-frequency devices.
  • the invention has at least two sets of intermediate short-circuit grids, and the connection manner of the intermediate short-circuit grids and the interdigital transducers may be the same end or different ends.
  • At least two sets of connection modes may be arranged along the direction of sound wave propagation, or may be arranged in parallel, and separated by a certain distance, which can reduce the space occupation of the device.
  • the present invention does not change the frequency temperature characteristics, and its passband frequency bandwidth, operating frequency and the like are almost unchanged, but the out-of-band rejection performance is improved.
  • the invention adopts the same piezoelectric quartz material, the same manufacturing process, and the out-of-band suppression performance is improved.
  • the present invention is packaged in a surface mount package to reduce the size.
  • FIG. 1 is a topological structural view of a high-bandout high-frequency surface-mounted acoustic surface transverse wave resonator filter chip according to the present invention, which is connected in parallel with the transverse wave propagation direction of the acoustic surface, wherein (a), (b), c), (d) are four different topologies.
  • FIG. 2 is a topological structural view of a high-bandout high-frequency surface-mounted acoustic surface transverse wave resonator filter chip according to the present invention, which is connected along a transverse wave propagation direction of the acoustic surface and separated by a certain distance, wherein (a), (b), (c), and (d) are four different topologies.
  • FIG. 3 is a high band out-suppressing high frequency surface mount acoustic surface transverse wave resonant filter chip embodiment 3 of the present invention
  • a topology diagram consisting of three sets of transducers and two sets of intermediate short-circuited gates connected in parallel with another set of resonant filters at a distance, (a), (b), (c), (d) Four different topologies respectively.
  • FIG. 4 is a topological structural view of a high-bandout high-frequency surface-mounted acoustic surface transverse wave resonator filter chip according to the present invention, in which three sets of resonant filters are connected in parallel and separated by a certain distance.
  • FIG. 5 is a topological structural view of a high-bandout high-frequency surface-mounted acoustic surface transverse wave resonator filter chip according to the present invention, wherein two sets of resonant filters in the three groups are arranged along the sound propagation direction, and then resonate with the third group.
  • the filters are set in parallel and separated by a certain distance.
  • Embodiment 6 is a schematic structural view of Embodiment 1 of a high-band-outside high-frequency surface-mounting acoustic surface transverse wave resonator filter (including a chip and a surface mount casing) according to the present invention.
  • FIG. 7 is a schematic structural view of Embodiment 2 of a high-bandout high-frequency surface-mounted acoustic surface transverse wave resonator filter (including a chip and a surface mount casing) according to the present invention.
  • Figure 8 is a graph showing the performance of the high-band outer high-frequency surface mount acoustic surface transverse wave resonator filter of the structure of Figures 1 and 2 of the present invention.
  • Figure 9 is a schematic view showing the structure of a high-band-out-suppression high-frequency surface-mounting acoustic surface transverse wave resonator filter (including a chip and a surface mount casing) according to the present invention.
  • Figure 10 is a schematic view showing the structure of a high-bandout high-frequency surface mount acoustic surface transverse wave resonator filter (including a chip and a surface mount casing) according to the present invention.
  • Figure 11 is a graph showing the performance of the high-bandout high-frequency surface mount acoustic surface transverse wave resonator filter of the structure of Figures 9 and 10 of the present invention.
  • Figure 12 is a schematic view showing the structure of a high-bandout high-frequency surface mount acoustic surface transverse wave resonator filter (including a chip and a surface mount casing) according to the present invention.
  • Figure 13 is a graph showing the performance of the high-bandout high-frequency surface mount acoustic surface transverse wave resonator filter of the structure of Figure 12 of the present invention.
  • the high-band-outside high-frequency surface-mounted acoustic surface transverse wave resonator filter of the present invention comprises a chip 1 packaged in a surface mount casing 21, the chip 1 is provided with a resonance filter, and the resonance filter comprises a piezoelectric quartz base.
  • Sheet 10 and reflector, transducer, intermediate shorting grid, reflector disposed on piezoelectric quartz substrate 10 They are respectively located outside the different transducers, and the width of the middle shorting gate is smaller than the width of the transducer and distributed between the transducers.
  • the transducer is provided with a grounding end and a signal end, and the input signal end and the output signal end of the resonant filter are respectively connected to the independent spot welding island of the outer casing.
  • the high-band-outside high-frequency surface-mounting surface acoustic wave transverse wave resonator filter of the present invention has various structures, mainly in the number, structure and arrangement of the resonator filters. The following are introduced separately.
  • the resonant filter is two groups of the same structure, and each set of acoustic surface transverse wave resonant filter comprises two reflectors, two interdigital transducers and an intermediate shorting grid disposed on the piezoelectric substrate, and two sets of acoustic surface transverse wave resonance
  • the filter is connected end to end, that is, one of the interdigital transducers of one set of surface acoustic wave transverse wave resonator filters is connected by signal lines to an interdigital transducer of another set of surface acoustic wave transverse wave resonator filters.
  • the two sets of resonant filters are arranged along the direction of sound propagation, as shown in Figure 2, where (a), (b), (c), (d) are respectively four different topologies. Or connected parallel to the direction of sound propagation, and separated by a certain distance, that is, as shown in Figure 1, where (a), (b), (c), (d) are respectively four different topologies.
  • the difference between (a), (b), (c), and (d) in FIGS. 1 and 2 is that the connection between the intermediate short-circuit grid and the transducer is different.
  • Each intermediate shorting grid and the transducer can be connected at the same end or at different ends.
  • the resonant filter is two groups of different structures, wherein the group A comprises two reflectors disposed on the piezoelectric substrate, the two-finger transducers and the intermediate short-circuit grids; and the group B comprises two reflections disposed on the piezoelectric substrate.
  • the three-finger transducer and the two intermediate short-circuit grids are arranged in a manner of a reflector, an interdigital transducer, an intermediate short-circuit grid, an interdigital transducer, an intermediate short-circuit grid, an interdigital transducer, and a reflector;
  • the centered interdigital transducer acts as an input/output transducer for the B-group acoustic surface shear wave resonator filter, and the interdigital transducers on both sides are connected together by signal lines as the output of the B-group acoustic surface shear wave resonator filter / Input transducer;
  • two sets of surface acoustic wave transverse wave resonator filters are connected end to end, that is, an interdigital transducer of group A surface acoustic wave transverse wave resonator filter passes signal line and output transducer of group B surface acoustic wave transverse wave resonator filter or Enter the transducer connection.
  • the two sets of resonant filters are arranged in parallel, as shown in the various structures shown in FIG. At this time, the two sets of resonant filters are separated by a certain distance, wherein (a), (b), (c), and (d) are respectively four different topologies.
  • the resonant filter is three groups of the same structure, and each set of acoustic surface transverse wave resonant filter comprises two reflectors, a two-finger transducer and an intermediate short-circuit grid disposed on the piezoelectric substrate.
  • Three sets of surface acoustic wave transverse wave resonator filters are connected end to end, that is, an interdigital transducer of the first set of surface acoustic wave transverse wave resonator filters is connected by a signal line to an interdigital transducer of the second set of surface acoustic wave transverse wave resonator filters, The other interdigital transducer of the second set of surface acoustic wave transverse wave resonator filters is coupled to an interdigital transducer of the third set of surface acoustic wave transverse wave resonator filters by signal lines.
  • the three sets of resonant filters are arranged parallel to each other and separated by a certain distance, as shown in FIG.
  • two sets of resonant filters in the three sets of structures are arranged along the direction of sound wave propagation, and the third set is parallel and spaced apart by a certain distance, as shown in FIG.
  • the chip structure is housed in the same surface mount housing with the chip pattern facing up and connected to the housing by leads.
  • the input signal end and the output signal end of the chip are respectively connected to the independent spot welding islands of different surface gold plating of the surface mounting shell, and the grounding end of the chip is connected with the bottom plate of the surface mounting outer casing to form a large area common ground, thereby improving the out-of-band suppression performance.
  • the leads are made of the same material and may be made of aluminum or gold. All leads can be either two-lead or single-lead.
  • the piezoelectric substrate is a weak piezoelectric material such as a quartz substrate.
  • the present invention employs two or more types of surface transverse wave structures having intermediate short-circuit gates, the acoustic surface transverse wave mode such as the double transducer mode described in US 4965479, the finger width of the intermediate shorting gate is smaller than the width of the interdigital transducer fingers, and the excitation
  • the surface shear wave with a speed of up to 5000 m/s is 1.6 times higher than the Rayleigh type surface acoustic wave, which is especially suitable for high frequency band operation.
  • At least two sets of topological resonant filters have improved out-of-band rejection.
  • the grounding lead is directly connected to the gold-plated substrate of the surface mount housing to form a large-area common ground, which further improves the out-of-band rejection performance and satisfies the requirement of high-band rejection of the resonant filter.
  • chip 1 piezoelectric quartz substrate 10; reflectors 101, 105, 106, 110; 201, 205, 206, 210; 301, 307, 308, 312; 401, 405, 406 , 410, 411, 415; 501, 505, 506, 510, 511, 515; transducers 102, 104, 107, 109; 202, 204, 207, 209; 302, 304, 306, 309, 311; 402, 404, 407, 409, 412, 414; 502, 504, 507, 509, 512, 514; intermediate shorting gates 103, 108; 203, 208; 303, 305, 310; 403, 408, 413; 503, 508, 513 Signal connection lines 120, 122, 124; input signal line 201; output signal line 202.
  • Embodiment 6 is a schematic structural view of Embodiment 1 of a high-band-outside high-frequency surface-mounting acoustic surface transverse wave resonator filter (including a chip and a surface mount casing) according to the present invention.
  • FIG. 7 is a schematic structural view of Embodiment 2 of a high-bandout high-frequency surface-mounted acoustic surface transverse wave resonator filter (including a chip and a surface mount casing) according to the present invention.
  • Figure 8 is a high-outband high-frequency surface mount acoustic surface transverse wave resonance filter of the structure of Figure 1 and Figure 2 of the present invention; Wave performance graph.
  • Figure 9 is a schematic view showing the structure of a high-band-out-suppression high-frequency surface-mounting acoustic surface transverse wave resonator filter (including a chip and a surface mount casing) according to the present invention.
  • Figure 10 is a schematic view showing the structure of a high-bandout high-frequency surface mount acoustic surface transverse wave resonator filter (including a chip and a surface mount casing) according to the present invention.
  • Figure 11 is a graph showing the performance of the high-bandout high-frequency surface mount acoustic surface transverse wave resonator filter of the structure of Figures 9 and 10 of the present invention.
  • Figure 12 is a schematic view showing the structure of a high-bandout high-frequency surface mount acoustic surface transverse wave resonator filter (including a chip and a surface mount casing) according to the present invention.
  • Figure 13 is a graph showing the performance of the high-bandout high-frequency surface mount acoustic surface transverse wave resonator filter of the structure of Figure 12 of the present invention.
  • the present invention adopts two or more types of top surface acoustic wave transverse wave resonance filters, and has high out-of-band rejection performance in a high frequency band.
  • the input signal and output signal are connected to the surface mount housing via leads.
  • the passband performance of the resonant filter such as piezoelectric quartz substrate material, device frequency, bandwidth and other characteristics are basically unchanged, and the out-of-band rejection performance of the resonant filter is greatly improved.

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  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)

Abstract

A harmonic filter suppressing a high frequency higher harmonic of an acoustic surface transverse wave, comprising a chip (1), packaged in a surface-mount package (21), and comprising two or more acoustic surface transverse wave filters arranged thereon, wherein all of the acoustic surface transverse wave filters are serially connected to one another, and finger widths of middle short gratings (103), (108) of each of the acoustic surface transverse wave filters are less than finger widths of slanted finger interdigital transducers (102), (104), (107), (109). The harmonic filter provides enhanced out-of-band suppression, improves performance of out-of-band suppression, and meets a requirement of providing high out-of-band suppression when operating in a high frequency. Components of the harmonic filter may be arranged according to two or more connection types including arranging the components along a propagation direction of an acoustic wave, or arranging the components in parallel and separated by a distance, thereby reducing a space taken up by the components.

Description

高带外抑制高频表面贴装声表面横波谐振滤波器High-bandout high-frequency surface mount acoustic surface shear wave resonator filter 技术领域Technical field
本发明涉及声表面波器件，尤其是一种高带外抑制高频表面贴装声表面横波谐振滤波器，适合频率在2GHz以上的高频窄带信号处理系统应用，属于声表面波器件技术领域。The invention relates to a surface acoustic wave device, in particular to a high-bandout high-frequency surface-mounted acoustic surface transverse wave resonance filter, which is suitable for high-frequency narrow-band signal processing system with a frequency above 2 GHz, and belongs to the technical field of surface acoustic wave devices.
背景技术Background technique
声表面波滤波器已经广泛应用于移动通信、信号处理系统中。其工作频率越高，用于激励声表面波信号的叉指换能器的指条宽度就越窄。在美国专利US4965479中，揭示了一种声表面横波谐振器，包含石英基片和置于换能器之间的中间短路栅结构。Surface acoustic wave filters have been widely used in mobile communication and signal processing systems. The higher the operating frequency, the narrower the finger width of the interdigital transducer used to excite the surface acoustic wave signal. In U.S. Patent 4,965,479, a surface acoustic wave transverse resonator is disclosed comprising a quartz substrate and an intermediate shorting gate structure disposed between the transducers.
压电石英基片上激励的声表面横波，在相同工艺条件下，具有比瑞利型声表面波高1.6倍的声速，其在压电石英基片上的声速可达5000m/s左右，因此，更适应制作高频波段器件。声表面横波谐振滤波器是在声表面横波谐振器的基础上，开发出来的窄带高带外抑制谐振滤波器，与谐振器相比，不单要求频率、带宽、损耗等性能，作为滤波器使用，还要求通带以外的抑制性能。声表面横波谐振由于受到其拓扑结构的限制，其带外抑制有限，不能满足高带外抑制性能要求。The acoustic surface transverse wave excited on the piezoelectric quartz substrate has a sound velocity 1.6 times higher than that of the Rayleigh type surface acoustic wave under the same process conditions, and the sound velocity on the piezoelectric quartz substrate can reach about 5000 m/s, so it is more suitable. Make high frequency band devices. The surface acoustic wave transverse wave resonator filter is a narrow-band high-band-out-of-band suppression resonant filter developed on the basis of a surface acoustic wave transverse wave resonator. Compared with the resonator, it not only requires frequency, bandwidth, loss, etc., but is used as a filter. Inhibition performance other than passband is also required. Due to the limitation of its topological structure, the acoustic surface shear wave resonance has limited out-of-band rejection and cannot meet the high out-of-band rejection performance requirements.
发明内容Summary of the invention
针对现有技术存在的上述不足，本发明的目的在于提供一种高带外抑制高频表面贴装声表面横波谐振滤波器。本谐振滤波器带外抑制大大提高，改善了带外抑制性能，在高频工作时满足了高带外抑制的要求。In view of the above-mentioned deficiencies of the prior art, it is an object of the present invention to provide a high-bandwidth suppression high frequency surface mount acoustic surface transverse wave resonant filter. The out-of-band rejection of the resonant filter is greatly improved, the out-of-band rejection performance is improved, and the requirement of high out-of-band rejection is satisfied at high frequency operation.
为了实现上述目的，本发明采用的技术方案如下：In order to achieve the above object, the technical solution adopted by the present invention is as follows:
高带外抑制高频表面贴装声表面横波谐振滤波器，包括封装在表面贴装外壳内的芯片，所述芯片上设有声表面横波谐振滤波器，其特征在于：所述声表面横波谐振滤波器为两组，每组声表面横波谐振滤波器包含设置在压电基片上的两反射器、两叉指换能器和中间短路栅，中间短路栅位于两叉指换能器之间，两反射 器分别位于两叉指换能器外侧；两组声表面横波谐振滤波器首尾连接，即其中一组声表面横波谐振滤波器的一个叉指换能器通过信号线与另一组声表面横波谐振滤波器的一个叉指换能器连接。High-bandout high-frequency surface mount acoustic surface transverse wave resonant filter, including a chip packaged in a surface mount housing, the chip is provided with a surface acoustic wave transverse wave resonator filter, characterized in that: the acoustic surface transverse wave resonance filter The two sets of acoustic surface shear wave resonator filters comprise two reflectors disposed on the piezoelectric substrate, two interdigital transducers and an intermediate shorting grid, and the intermediate shorting grid is located between the two interdigital transducers, two Reflection The two sets of acoustic surface shear wave resonator filters are connected end to end; that is, one of the interdigital transducers of one set of surface acoustic wave transverse wave resonators resonates with the other set of acoustic surface transverse waves through the signal line An interdigital transducer connection of the filter.
其中，中间短路栅的指条宽度小于叉指换能器的指条宽度；两组声表面横波谐振滤波器沿着声传播方向设置，并相隔一定距离；或是平行设置，并相隔一定距离。Wherein, the width of the finger of the intermediate short-circuit grid is smaller than the width of the finger of the interdigital transducer; two sets of surface acoustic wave transverse wave resonator filters are arranged along the sound propagation direction and separated by a certain distance; or are arranged in parallel and separated by a certain distance.
高带外抑制高频表面贴装声表面横波谐振滤波器，包括封装在表面贴装外壳内的芯片，所述芯片上设有声表面横波谐振滤波器，其特征在于：所述声表面横波谐振滤波器为两组，其中A组声表面横波谐振滤波器包含设置在压电基片上的两反射器、两叉指换能器和中间短路栅，中间短路栅位于两叉指换能器之间，两反射器分别位于两叉指换能器外侧；High-bandout high-frequency surface mount acoustic surface transverse wave resonant filter, including a chip packaged in a surface mount housing, the chip is provided with a surface acoustic wave transverse wave resonator filter, characterized in that: the acoustic surface transverse wave resonance filter The device is two groups, wherein the group A surface acoustic wave transverse wave resonance filter comprises two reflectors disposed on the piezoelectric substrate, a two-finger transducer and an intermediate short-circuit grid, and the intermediate short-circuit grid is located between the two-finger transducers. The two reflectors are respectively located outside the two-finger transducers;
B组声表面横波谐振滤波器包含设置在压电基片上的两反射器、三叉指换能器和两中间短路栅并按反射器、叉指换能器、中间短路栅、叉指换能器、中间短路栅、叉指换能器、反射器方式间隔布置；其中居中的叉指换能器作为B组声表面横波谐振滤波器的输入/输出换能器，两侧的叉指换能器通过信号线连接在一起作为B组声表面横波谐振滤波器的输出/输入换能器；Group B surface acoustic wave transverse wave resonator filter comprises two reflectors, a three-finger finger transducer and two intermediate short-circuit grids arranged on the piezoelectric substrate and according to the reflector, the interdigital transducer, the intermediate short-circuit grid, the interdigital transducer , intermediate short-circuit grid, interdigital transducer, reflector arrangement; wherein the centered interdigital transducer acts as an input/output transducer for group B surface acoustic wave transverse wave resonator filters, and interdigital transducers on both sides Connected together by signal lines as output/input transducers for Group B surface acoustic wave transverse wave resonator filters;
两组声表面横波谐振滤波器首尾连接，即A组声表面横波谐振滤波器的一个叉指换能器通过信号线与B组声表面横波谐振滤波器的输出换能器或者输入换能器连接。Two sets of surface acoustic wave transverse wave resonator filters are connected end to end, that is, an interdigital transducer of group A surface acoustic wave transverse wave resonator filter is connected to the output transducer or input transducer of group B surface acoustic wave transverse wave resonator filter through signal line. .
其中，中间短路栅的指条宽度小于叉指换能器的指条宽度；两组声表面横波谐振滤波器平行设置，并相隔一定距离。Wherein, the width of the finger of the intermediate short-circuit grid is smaller than the width of the finger of the interdigital transducer; two sets of surface acoustic wave transverse wave resonator filters are arranged in parallel and separated by a certain distance.
高带外抑制高频表面贴装声表面横波谐振滤波器，包括封装在表面贴装外壳内的芯片，所述芯片上设有声表面横波谐振滤波器，其特征在于：所述声表面横波谐振滤波器为三组，每组声表面横波谐振滤波器包含设置在压电基片上的两反射器、两叉指换能器和中间短路栅，中间短路栅位于两叉指换能器之间，两反射器分别位于两叉指换能器外侧；三组声表面横波谐振滤波器首尾连接，即第一组声表面横波谐振滤波器的一个叉指换能器通过信号线与第二组声表面横波谐振滤波器的一个叉指换能器连接，第二组声表面横波谐振滤波器的另一个叉指换能器通过信号线与第三组声表面横波谐振滤波器的一个叉指换能器连接。中间短路栅的指条宽度小于叉指换能器的指条宽度；其中两组声表面横波谐振滤波器沿声 波传播方向连接且相隔一定距离，第三组声表面横波谐振滤波器与前面两组平行连接，且相隔一定距离；或者三组声表面横波谐振滤波器彼此平行连接，且相隔一定距离。High-bandout high-frequency surface mount acoustic surface transverse wave resonant filter, including a chip packaged in a surface mount housing, the chip is provided with a surface acoustic wave transverse wave resonator filter, characterized in that: the acoustic surface transverse wave resonance filter The three sets of acoustic surface shear wave resonator filters comprise two reflectors, two interdigital transducers and an intermediate shorting grid disposed on the piezoelectric substrate, and the intermediate shorting grid is located between the two interdigital transducers, two The reflectors are respectively located outside the two-finger transducers; three sets of surface acoustic wave transverse wave resonator filters are connected end to end, that is, an interdigital transducer of the first set of surface acoustic wave transverse wave resonator filters passes the signal line and the second group of acoustic surface transverse waves One interdigital transducer of the resonant filter is connected, and the other interdigital transducer of the second set of acoustic surface shear wave resonator filters is connected to an interdigital transducer of the third set of acoustic surface shear wave resonator filters via signal lines . The width of the finger of the intermediate shorting grid is smaller than the width of the finger of the interdigital transducer; two sets of acoustic surface shear wave resonator filters along the sound The wave propagation directions are connected and separated by a certain distance. The third set of acoustic surface shear wave resonator filters are connected in parallel with the previous two groups and separated by a certain distance; or three sets of surface acoustic wave transverse wave resonator filters are connected in parallel with each other and separated by a certain distance.
每组声表面横波谐振滤波器的输入信号端和输出信号端分别位于不同的叉指换能器上。The input signal end and the output signal end of each set of surface acoustic wave transverse wave resonator filters are respectively located on different interdigital transducers.
每个中间短路栅与叉指换能器的链接方式可是相同端的，也可是不同端的。Each intermediate shorting grid and the interdigital transducer can be linked at the same end or at different ends.
所有声表面横波谐振滤波器封装在同一种类型的表面贴装外壳内，图形面朝上，用引线与表面贴装外壳连接。All surface acoustic wave resonator filters are packaged in the same type of surface mount enclosure with the graphics side facing up and connected to the surface mount housing with leads.
所述压电基片材料为弱压电材料，如石英基片。The piezoelectric substrate material is a weak piezoelectric material such as a quartz substrate.
相比现有技术，本发明具有如下有益效果：Compared with the prior art, the present invention has the following beneficial effects:
1、本发明采用中间短路栅结构的表面横波模式，激励出的声表面横波波速度高出瑞利型声表面波波速的1.6倍，特别适合高频器件。本发明至少有两组中间短路栅，中间短路栅与叉指换能器的连接方式，可是相同端的，也可是不同端。1. The surface acoustic wave mode of the intermediate short-circuit gate structure is adopted in the invention, and the acoustic wave surface transverse wave velocity is excited by 1.6 times higher than the Rayleigh-type surface acoustic wave velocity, which is particularly suitable for high-frequency devices. The invention has at least two sets of intermediate short-circuit grids, and the connection manner of the intermediate short-circuit grids and the interdigital transducers may be the same end or different ends.
2、至少两组连接方式可是沿着声波传播方向设置，也可是平行设置，并且相隔一定距离，这样可以降低器件空间占用。2. At least two sets of connection modes may be arranged along the direction of sound wave propagation, or may be arranged in parallel, and separated by a certain distance, which can reduce the space occupation of the device.
3、本发明与声表面横波谐振滤波器相比，不改变频率温度特性，其通带频率带宽、工作频率等性质几乎不变，但带外抑制性能得到提高。3. Compared with the acoustic surface transverse wave resonant filter, the present invention does not change the frequency temperature characteristics, and its passband frequency bandwidth, operating frequency and the like are almost unchanged, but the out-of-band rejection performance is improved.
4、本发明与声表面横波谐振滤波器相比，采用相同的压电石英材料，相同的制作工艺，而带外抑制性能提高。4. Compared with the acoustic surface transverse wave resonance filter, the invention adopts the same piezoelectric quartz material, the same manufacturing process, and the out-of-band suppression performance is improved.
5、本发明采用表面贴装外壳封装，减少了尺寸。5. The present invention is packaged in a surface mount package to reduce the size.
附图说明DRAWINGS
图1为本发明高带外抑制高频表面贴装声表面横波谐振滤波器芯片实施例1拓扑结构图，其连接方式为平行于声表面横波传播方向，其中(a)、(b)、(c)、(d)分别为四种不同拓扑结构。1 is a topological structural view of a high-bandout high-frequency surface-mounted acoustic surface transverse wave resonator filter chip according to the present invention, which is connected in parallel with the transverse wave propagation direction of the acoustic surface, wherein (a), (b), c), (d) are four different topologies.
图2为本发明高带外抑制高频表面贴装声表面横波谐振滤波器芯片实施例2拓扑结构图，其连接方式为沿着声表面横波传播方向，并相隔一定距离，其中(a)、(b)、(c)、(d)分别为四种不同拓扑结构。2 is a topological structural view of a high-bandout high-frequency surface-mounted acoustic surface transverse wave resonator filter chip according to the present invention, which is connected along a transverse wave propagation direction of the acoustic surface and separated by a certain distance, wherein (a), (b), (c), and (d) are four different topologies.
图3为本发明高带外抑制高频表面贴装声表面横波谐振滤波器芯片实施例3 拓扑结构图，由三组换能器和两组中间短路栅组成的谐振滤波器，与另一组谐振滤波器平行连接，并相隔一定距离，其中(a)、(b)、(c)、(d)分别为四种不同拓扑结构。3 is a high band out-suppressing high frequency surface mount acoustic surface transverse wave resonant filter chip embodiment 3 of the present invention A topology diagram consisting of three sets of transducers and two sets of intermediate short-circuited gates connected in parallel with another set of resonant filters at a distance, (a), (b), (c), (d) Four different topologies respectively.
图4为本发明高带外抑制高频表面贴装声表面横波谐振滤波器芯片实施例4拓扑结构图，其三组谐振滤波器平行连接，并相隔一定距离。4 is a topological structural view of a high-bandout high-frequency surface-mounted acoustic surface transverse wave resonator filter chip according to the present invention, in which three sets of resonant filters are connected in parallel and separated by a certain distance.
图5为本发明高带外抑制高频表面贴装声表面横波谐振滤波器芯片实施例5拓扑结构图，其三组中的两组谐振滤波器沿声传播方向设置，再与第三组谐振滤波器平行设置，并相隔一定距离。5 is a topological structural view of a high-bandout high-frequency surface-mounted acoustic surface transverse wave resonator filter chip according to the present invention, wherein two sets of resonant filters in the three groups are arranged along the sound propagation direction, and then resonate with the third group. The filters are set in parallel and separated by a certain distance.
图6为本发明高带外抑制高频表面贴装声表面横波谐振滤波器(包括芯片和表面贴装外壳)实施例1结构示意图。6 is a schematic structural view of Embodiment 1 of a high-band-outside high-frequency surface-mounting acoustic surface transverse wave resonator filter (including a chip and a surface mount casing) according to the present invention.
图7为本发明高带外抑制高频表面贴装声表面横波谐振滤波器(包括芯片和表面贴装外壳)实施例2结构示意图。FIG. 7 is a schematic structural view of Embodiment 2 of a high-bandout high-frequency surface-mounted acoustic surface transverse wave resonator filter (including a chip and a surface mount casing) according to the present invention.
图8为本发明图1和图2结构的高带外抑制高频表面贴装声表面横波谐振滤波器性能图。Figure 8 is a graph showing the performance of the high-band outer high-frequency surface mount acoustic surface transverse wave resonator filter of the structure of Figures 1 and 2 of the present invention.
图9为本发明高带外抑制高频表面贴装声表面横波谐振滤波器(包括芯片和表面贴装外壳)实施例4结构示意图。Figure 9 is a schematic view showing the structure of a high-band-out-suppression high-frequency surface-mounting acoustic surface transverse wave resonator filter (including a chip and a surface mount casing) according to the present invention.
图10为本发明高带外抑制高频表面贴装声表面横波谐振滤波器(包括芯片和表面贴装外壳)实施例5结构示意图。Figure 10 is a schematic view showing the structure of a high-bandout high-frequency surface mount acoustic surface transverse wave resonator filter (including a chip and a surface mount casing) according to the present invention.
图11为本发明图9和图10结构的高带外抑制高频表面贴装声表面横波谐振滤波器性能图。Figure 11 is a graph showing the performance of the high-bandout high-frequency surface mount acoustic surface transverse wave resonator filter of the structure of Figures 9 and 10 of the present invention.
图12为本发明高带外抑制高频表面贴装声表面横波谐振滤波器(包括芯片和表面贴装外壳)实施例3结构示意图。Figure 12 is a schematic view showing the structure of a high-bandout high-frequency surface mount acoustic surface transverse wave resonator filter (including a chip and a surface mount casing) according to the present invention.
图13为本发明图12结构的高带外抑制高频表面贴装声表面横波谐振滤波器性能图。Figure 13 is a graph showing the performance of the high-bandout high-frequency surface mount acoustic surface transverse wave resonator filter of the structure of Figure 12 of the present invention.
具体实施方式detailed description
下面结合附图对本发明作进一步详细说明。The invention will be further described in detail below with reference to the accompanying drawings.
本发明高带外抑制高频表面贴装声表面横波谐振滤波器，包括封装在表面贴装外壳21内的芯片1，所述芯片1上设有谐振滤波器，谐振滤波器包括压电石英基片10和设置在压电石英基片10上的反射器、换能器、中间短路栅，反射器 分别位于不同换能器的外侧，中间短路栅的指条宽度小于换能器的指条宽度并分布在换能器之间。换能器设有接地端和信号端，谐振滤波器的输入信号端和输出信号端分别与外壳的独立点焊岛连接。The high-band-outside high-frequency surface-mounted acoustic surface transverse wave resonator filter of the present invention comprises a chip 1 packaged in a surface mount casing 21, the chip 1 is provided with a resonance filter, and the resonance filter comprises a piezoelectric quartz base. Sheet 10 and reflector, transducer, intermediate shorting grid, reflector disposed on piezoelectric quartz substrate 10 They are respectively located outside the different transducers, and the width of the middle shorting gate is smaller than the width of the transducer and distributed between the transducers. The transducer is provided with a grounding end and a signal end, and the input signal end and the output signal end of the resonant filter are respectively connected to the independent spot welding island of the outer casing.
本发明高带外抑制高频表面贴装声表面横波谐振滤波器涉及到的结构有多种，主要在于谐振滤波器的数量、结构及之间的排列方式。下面分别介绍。The high-band-outside high-frequency surface-mounting surface acoustic wave transverse wave resonator filter of the present invention has various structures, mainly in the number, structure and arrangement of the resonator filters. The following are introduced separately.
一、谐振滤波器为结构相同的两组，且每组声表面横波谐振滤波器包含设置在压电基片上的两反射器、两叉指换能器和中间短路栅，两组声表面横波谐振滤波器首尾连接，即其中一组声表面横波谐振滤波器的一个叉指换能器通过信号线与另一组声表面横波谐振滤波器的一个叉指换能器连接。两组谐振滤波器沿着声传播方向设置，即图2所示，其中(a)、(b)、(c)、(d)分别为四种不同拓扑结构。或者平行于声传播方向连接，并相隔一定距离，即图1所示，其中(a)、(b)、(c)、(d)分别为四种不同拓扑结构。其中图1、2中(a)、(b)、(c)、(d)的区别在于中间短路栅与换能器之间的连接方式不同。1. The resonant filter is two groups of the same structure, and each set of acoustic surface transverse wave resonant filter comprises two reflectors, two interdigital transducers and an intermediate shorting grid disposed on the piezoelectric substrate, and two sets of acoustic surface transverse wave resonance The filter is connected end to end, that is, one of the interdigital transducers of one set of surface acoustic wave transverse wave resonator filters is connected by signal lines to an interdigital transducer of another set of surface acoustic wave transverse wave resonator filters. The two sets of resonant filters are arranged along the direction of sound propagation, as shown in Figure 2, where (a), (b), (c), (d) are respectively four different topologies. Or connected parallel to the direction of sound propagation, and separated by a certain distance, that is, as shown in Figure 1, where (a), (b), (c), (d) are respectively four different topologies. The difference between (a), (b), (c), and (d) in FIGS. 1 and 2 is that the connection between the intermediate short-circuit grid and the transducer is different.
每个中间短路栅与换能器的连接方式可是同端的，也可是不同端。Each intermediate shorting grid and the transducer can be connected at the same end or at different ends.
二、谐振滤波器为结构不同的两组，其中A组包含设置在压电基片上的两反射器、两叉指换能器和中间短路栅；B组包含设置在压电基片上的两反射器、三叉指换能器和两中间短路栅并按反射器、叉指换能器、中间短路栅、叉指换能器、中间短路栅、叉指换能器、反射器方式间隔布置；其中居中的叉指换能器作为B组声表面横波谐振滤波器的输入/输出换能器，两侧的叉指换能器通过信号线连接在一起作为B组声表面横波谐振滤波器的输出/输入换能器；两组声表面横波谐振滤波器首尾连接，即A组声表面横波谐振滤波器的一个叉指换能器通过信号线与B组声表面横波谐振滤波器的输出换能器或者输入换能器连接。2. The resonant filter is two groups of different structures, wherein the group A comprises two reflectors disposed on the piezoelectric substrate, the two-finger transducers and the intermediate short-circuit grids; and the group B comprises two reflections disposed on the piezoelectric substrate. , the three-finger transducer and the two intermediate short-circuit grids are arranged in a manner of a reflector, an interdigital transducer, an intermediate short-circuit grid, an interdigital transducer, an intermediate short-circuit grid, an interdigital transducer, and a reflector; The centered interdigital transducer acts as an input/output transducer for the B-group acoustic surface shear wave resonator filter, and the interdigital transducers on both sides are connected together by signal lines as the output of the B-group acoustic surface shear wave resonator filter / Input transducer; two sets of surface acoustic wave transverse wave resonator filters are connected end to end, that is, an interdigital transducer of group A surface acoustic wave transverse wave resonator filter passes signal line and output transducer of group B surface acoustic wave transverse wave resonator filter or Enter the transducer connection.
两组谐振滤波器平行设置，见图3所示的各结构。此时，两组谐振滤波器之间间隔一定距离，其中(a)、(b)、(c)、(d)分别为四种不同拓扑结构。The two sets of resonant filters are arranged in parallel, as shown in the various structures shown in FIG. At this time, the two sets of resonant filters are separated by a certain distance, wherein (a), (b), (c), and (d) are respectively four different topologies.
三、谐振滤波器为结构相同的三组，每组声表面横波谐振滤波器包含设置在压电基片上的两反射器、两叉指换能器和中间短路栅。三组声表面横波谐振滤波器首尾连接，即第一组声表面横波谐振滤波器的一个叉指换能器通过信号线与第二组声表面横波谐振滤波器的一个叉指换能器连接，第二组声表面横波谐振滤波器的另一个叉指换能器通过信号线与第三组声表面横波谐振滤波器的一个叉指换能器连接。 3. The resonant filter is three groups of the same structure, and each set of acoustic surface transverse wave resonant filter comprises two reflectors, a two-finger transducer and an intermediate short-circuit grid disposed on the piezoelectric substrate. Three sets of surface acoustic wave transverse wave resonator filters are connected end to end, that is, an interdigital transducer of the first set of surface acoustic wave transverse wave resonator filters is connected by a signal line to an interdigital transducer of the second set of surface acoustic wave transverse wave resonator filters, The other interdigital transducer of the second set of surface acoustic wave transverse wave resonator filters is coupled to an interdigital transducer of the third set of surface acoustic wave transverse wave resonator filters by signal lines.
三组谐振滤波器彼此平行设置并相隔一定距离，如图4所示。或是三组结构中的两组谐振滤波器沿着声波传播方向设置，第三组再与之平行并相隔一定距离，如图5所示。The three sets of resonant filters are arranged parallel to each other and separated by a certain distance, as shown in FIG. Or two sets of resonant filters in the three sets of structures are arranged along the direction of sound wave propagation, and the third set is parallel and spaced apart by a certain distance, as shown in FIG.
所述芯片结构装入相同表面贴装外壳内，芯片图形面朝上，采用引线与外壳连接。芯片的输入信号端、输出信号端分别与表面贴装外壳镀金不同的独立点焊岛连接，芯片的接地端与表面贴装外壳的底板连接，形成大面积共地，提高带外抑制性能。The chip structure is housed in the same surface mount housing with the chip pattern facing up and connected to the housing by leads. The input signal end and the output signal end of the chip are respectively connected to the independent spot welding islands of different surface gold plating of the surface mounting shell, and the grounding end of the chip is connected with the bottom plate of the surface mounting outer casing to form a large area common ground, thereby improving the out-of-band suppression performance.
所述引线(包括接地引线和信号引线)为同一材质，其材质可为铝或者金。所有引线可为双引线，也可是单引线。The leads (including the ground lead and the signal lead) are made of the same material and may be made of aluminum or gold. All leads can be either two-lead or single-lead.
压电基片为弱压电材料，如石英基片。The piezoelectric substrate is a weak piezoelectric material such as a quartz substrate.
本发明采用两组以上具有中间短路栅的表面横波结构，声表面横波模式如US 4965479中所述的双换能器模式，中间短路栅的指条带宽小于叉指换能器指条宽度，激励速度可达5000米/秒的表面横波，比瑞利型声表面波高1.6倍，特别适合高频波段工作。至少两组拓扑结构的谐振滤波器，带外抑制性能得到提高。其接地引线直接连接在表面贴装外壳的镀金底板上，形成大面积公共接地，进一步改善带外抑制性能，满足了谐振滤波器高带外抑制的要求。The present invention employs two or more types of surface transverse wave structures having intermediate short-circuit gates, the acoustic surface transverse wave mode such as the double transducer mode described in US 4965479, the finger width of the intermediate shorting gate is smaller than the width of the interdigital transducer fingers, and the excitation The surface shear wave with a speed of up to 5000 m/s is 1.6 times higher than the Rayleigh type surface acoustic wave, which is especially suitable for high frequency band operation. At least two sets of topological resonant filters have improved out-of-band rejection. The grounding lead is directly connected to the gold-plated substrate of the surface mount housing to form a large-area common ground, which further improves the out-of-band rejection performance and satisfies the requirement of high-band rejection of the resonant filter.
本发明图中标号对应关系如下：芯片1；压电石英基片10；反射器101、105、106、110；201、205、206、210；301、307、308、312；401、405、406、410、411、415；501、505、506、510、511、515；换能器102、104、107、109；202、204、207、209；302、304、306、309、311；402、404、407、409、412、414；502、504、507、509、512、514；中间短路栅103、108；203、208；303、305、310；403、408、413；503、508、513；信号连接线120、122、124；输入信号线201；输出信号线202。Corresponding relationship in the figures of the present invention is as follows: chip 1; piezoelectric quartz substrate 10; reflectors 101, 105, 106, 110; 201, 205, 206, 210; 301, 307, 308, 312; 401, 405, 406 , 410, 411, 415; 501, 505, 506, 510, 511, 515; transducers 102, 104, 107, 109; 202, 204, 207, 209; 302, 304, 306, 309, 311; 402, 404, 407, 409, 412, 414; 502, 504, 507, 509, 512, 514; intermediate shorting gates 103, 108; 203, 208; 303, 305, 310; 403, 408, 413; 503, 508, 513 Signal connection lines 120, 122, 124; input signal line 201; output signal line 202.
其中图1、图2和图3中(a)、(b)、(c)、(d)各自的区别在于中间短路栅与叉指换能器之间的连接方式不同。The difference between (a), (b), (c), and (d) in FIGS. 1, 2, and 3 is that the connection between the intermediate shorting grid and the interdigital transducer is different.
图6为本发明高带外抑制高频表面贴装声表面横波谐振滤波器(包括芯片和表面贴装外壳)实施例1结构示意图。6 is a schematic structural view of Embodiment 1 of a high-band-outside high-frequency surface-mounting acoustic surface transverse wave resonator filter (including a chip and a surface mount casing) according to the present invention.
图7为本发明高带外抑制高频表面贴装声表面横波谐振滤波器(包括芯片和表面贴装外壳)实施例2结构示意图。FIG. 7 is a schematic structural view of Embodiment 2 of a high-bandout high-frequency surface-mounted acoustic surface transverse wave resonator filter (including a chip and a surface mount casing) according to the present invention.
图8为本发明图1和图2结构的高带外抑制高频表面贴装声表面横波谐振滤 波器性能图。Figure 8 is a high-outband high-frequency surface mount acoustic surface transverse wave resonance filter of the structure of Figure 1 and Figure 2 of the present invention; Wave performance graph.
图9为本发明高带外抑制高频表面贴装声表面横波谐振滤波器(包括芯片和表面贴装外壳)实施例4结构示意图。Figure 9 is a schematic view showing the structure of a high-band-out-suppression high-frequency surface-mounting acoustic surface transverse wave resonator filter (including a chip and a surface mount casing) according to the present invention.
图10为本发明高带外抑制高频表面贴装声表面横波谐振滤波器(包括芯片和表面贴装外壳)实施例5结构示意图。Figure 10 is a schematic view showing the structure of a high-bandout high-frequency surface mount acoustic surface transverse wave resonator filter (including a chip and a surface mount casing) according to the present invention.
图11为本发明图9和图10结构的高带外抑制高频表面贴装声表面横波谐振滤波器性能图。Figure 11 is a graph showing the performance of the high-bandout high-frequency surface mount acoustic surface transverse wave resonator filter of the structure of Figures 9 and 10 of the present invention.
图12为本发明高带外抑制高频表面贴装声表面横波谐振滤波器(包括芯片和表面贴装外壳)实施例3结构示意图。Figure 12 is a schematic view showing the structure of a high-bandout high-frequency surface mount acoustic surface transverse wave resonator filter (including a chip and a surface mount casing) according to the present invention.
图13为本发明图12结构的高带外抑制高频表面贴装声表面横波谐振滤波器性能图。Figure 13 is a graph showing the performance of the high-bandout high-frequency surface mount acoustic surface transverse wave resonator filter of the structure of Figure 12 of the present invention.
本发明首次采用两组以上拓扑结构的声表面横波谐振滤波器，在高频波段时，具有高的带外抑制性能。采用表面贴装外壳，图形面朝上，输入信号和输出信号通过引线与表面贴装外壳连接。谐振滤波器的通带性能，如压电石英基片材料、器件频率、带宽等特性基本不变，谐振滤波器的带外抑制性能大大提高。For the first time, the present invention adopts two or more types of top surface acoustic wave transverse wave resonance filters, and has high out-of-band rejection performance in a high frequency band. With a surface mount housing with a graphic side facing up, the input signal and output signal are connected to the surface mount housing via leads. The passband performance of the resonant filter, such as piezoelectric quartz substrate material, device frequency, bandwidth and other characteristics are basically unchanged, and the out-of-band rejection performance of the resonant filter is greatly improved.
本发明的上述实施例仅仅是为说明本发明所作的举例，而并非是对本发明的实施方式的限定。对于所属领域的普通技术人员来说，在上述说明的基础上还可以做出其他不同形式的变化和变动。这里无法对所有的实施方式予以穷举。凡是属于本发明的技术方案所引申出的显而易见的变化或变动仍处于本发明的保护范围之列。 The above-described embodiments of the present invention are merely illustrative of the invention, and are not intended to limit the embodiments of the invention. Other variations and modifications of the various forms can be made by those skilled in the art in light of the above description. It is not possible to exhaust all implementations here. Obvious changes or variations that come within the scope of the present invention are still within the scope of the invention.

Claims (10)

  1. 高带外抑制高频表面贴装声表面横波谐振滤波器，包括封装在表面贴装外壳内的芯片，所述芯片上设有声表面横波谐振滤波器，其特征在于：所述声表面横波谐振滤波器为两组，每组声表面横波谐振滤波器包含设置在压电基片上的两反射器、两叉指换能器和中间短路栅，中间短路栅位于两叉指换能器之间，两反射器分别位于两叉指换能器外侧；两组声表面横波谐振滤波器首尾连接，即其中一组声表面横波谐振滤波器的一个叉指换能器通过信号线与另一组声表面横波谐振滤波器的一个叉指换能器连接。High-bandout high-frequency surface mount acoustic surface transverse wave resonant filter, including a chip packaged in a surface mount housing, the chip is provided with a surface acoustic wave transverse wave resonator filter, characterized in that: the acoustic surface transverse wave resonance filter The two sets of acoustic surface shear wave resonator filters comprise two reflectors disposed on the piezoelectric substrate, two interdigital transducers and an intermediate shorting grid, and the intermediate shorting grid is located between the two interdigital transducers, two The reflectors are respectively located outside the two-finger transducers; two sets of surface acoustic wave transverse wave resonator filters are connected end to end, that is, one of the interdigital transducers of one set of surface acoustic wave transverse wave resonant filters passes the signal line and the other set of acoustic surface transverse waves An interdigital transducer connection of the resonant filter.
  2. 根据权利要求1所述的高带外抑制高频表面贴装声表面横波谐振滤波器，其特征在于：中间短路栅的指条宽度小于叉指换能器的指条宽度；两组声表面横波谐振滤波器沿着声传播方向设置，并相隔一定距离；或是平行设置，并相隔一定距离。The high-bandwidth suppression high-frequency surface mount acoustic surface shear wave resonator filter according to claim 1, wherein the width of the finger of the intermediate short-circuit grid is smaller than the width of the finger of the interdigital transducer; The resonant filters are arranged along the direction of sound propagation and are separated by a certain distance; or they are arranged in parallel and separated by a certain distance.
  3. 高带外抑制高频表面贴装声表面横波谐振滤波器，包括封装在表面贴装外壳内的芯片，所述芯片上设有声表面横波谐振滤波器，其特征在于：所述声表面横波谐振滤波器为两组，其中A组声表面横波谐振滤波器包含设置在压电基片上的两反射器、两叉指换能器和中间短路栅，中间短路栅位于两叉指换能器之间，两反射器分别位于两叉指换能器外侧；High-bandout high-frequency surface mount acoustic surface transverse wave resonant filter, including a chip packaged in a surface mount housing, the chip is provided with a surface acoustic wave transverse wave resonator filter, characterized in that: the acoustic surface transverse wave resonance filter The device is two groups, wherein the group A surface acoustic wave transverse wave resonance filter comprises two reflectors disposed on the piezoelectric substrate, a two-finger transducer and an intermediate short-circuit grid, and the intermediate short-circuit grid is located between the two-finger transducers. The two reflectors are respectively located outside the two-finger transducers;
    B组声表面横波谐振滤波器包含设置在压电基片上的两反射器、三叉指换能器和两中间短路栅并按反射器、叉指换能器、中间短路栅、叉指换能器、中间短路栅、叉指换能器、反射器方式间隔布置；其中居中的叉指换能器作为B组声表面横波谐振滤波器的输入/输出换能器，两侧的叉指换能器通过信号线连接在一起作为B组声表面横波谐振滤波器的输出/输入换能器；Group B surface acoustic wave transverse wave resonator filter comprises two reflectors, a three-finger finger transducer and two intermediate short-circuit grids arranged on the piezoelectric substrate and according to the reflector, the interdigital transducer, the intermediate short-circuit grid, the interdigital transducer , intermediate short-circuit grid, interdigital transducer, reflector arrangement; wherein the centered interdigital transducer acts as an input/output transducer for group B surface acoustic wave transverse wave resonator filters, and interdigital transducers on both sides Connected together by signal lines as output/input transducers for Group B surface acoustic wave transverse wave resonator filters;
    两组声表面横波谐振滤波器首尾连接，即A组声表面横波谐振滤波器的一个叉指换能器通过信号线与B组声表面横波谐振滤波器的输出换能器或者输入换能器连接。Two sets of surface acoustic wave transverse wave resonator filters are connected end to end, that is, an interdigital transducer of group A surface acoustic wave transverse wave resonator filter is connected to the output transducer or input transducer of group B surface acoustic wave transverse wave resonator filter through signal line. .
  4. 根据权利要求3所述的高带外抑制高频表面贴装声表面横波谐振滤波器，其特征在于：中间短路栅的指条宽度小于叉指换能器的指条宽度；两组声表面横波谐振滤波器平行设置，并相隔一定距离。The high-bandwidth suppression high-frequency surface mount acoustic surface transverse wave resonance filter according to claim 3, wherein the width of the finger of the intermediate short-circuit grid is smaller than the width of the finger of the interdigital transducer; The resonant filters are arranged in parallel and separated by a certain distance.
  5. 高带外抑制高频表面贴装声表面横波谐振滤波器，包括封装在表面贴装 外壳内的芯片，所述芯片上设有声表面横波谐振滤波器，其特征在于：所述声表面横波谐振滤波器为三组，每组声表面横波谐振滤波器包含设置在压电基片上的两反射器、两叉指换能器和中间短路栅，中间短路栅位于两叉指换能器之间，两反射器分别位于两叉指换能器外侧；三组声表面横波谐振滤波器首尾连接，即第一组声表面横波谐振滤波器的一个叉指换能器通过信号线与第二组声表面横波谐振滤波器的一个叉指换能器连接，第二组声表面横波谐振滤波器的另一个叉指换能器通过信号线与第三组声表面横波谐振滤波器的一个叉指换能器连接。High-bandout high-frequency surface mount acoustic surface shear wave resonator filter, including packaged on surface mount a chip in the outer casing, the chip is provided with a surface acoustic wave transverse wave resonance filter, wherein the surface acoustic wave transverse wave resonance filter is three groups, and each set of acoustic surface transverse wave resonance filter comprises two disposed on the piezoelectric substrate The reflector, the two-finger transducer and the intermediate short-circuit grid, the intermediate short-circuit grid is located between the two-finger transducers, and the two reflectors are respectively located outside the two-finger transducers; three sets of surface acoustic wave transverse wave resonator filters are connected end to end , that is, an interdigital transducer of the first set of surface acoustic wave transverse wave resonator filters is connected by a signal line to an interdigital transducer of the second set of surface acoustic wave transverse wave resonator filters, and the second set of surface acoustic wave transverse wave resonator filters Another interdigital transducer is coupled to an interdigital transducer of a third set of acoustic surface shear wave resonator filters via signal lines.
  6. 根据权利要求5所述的高带外抑制高频表面贴装声表面横波谐振滤波器，其特征在于：中间短路栅的指条宽度小于叉指换能器的指条宽度；其中两组声表面横波谐振滤波器沿声波传播方向连接且相隔一定距离，第三组声表面横波谐振滤波器与前面两组平行连接，且相隔一定距离；或者三组声表面横波谐振滤波器彼此平行连接，且相隔一定距离。The high-band-suppression high-frequency surface mount acoustic surface transverse wave resonator filter according to claim 5, wherein the width of the finger of the intermediate short-circuit grid is smaller than the width of the finger of the interdigital transducer; wherein the two sets of acoustic surfaces The shear wave resonator filters are connected along the direction of sound wave propagation and separated by a certain distance. The third group of surface acoustic wave transverse wave resonator filters are connected in parallel with the previous two groups and separated by a certain distance; or three sets of surface acoustic wave transverse wave resonator filters are connected in parallel with each other and separated by a certain distance.
  7. 根据权利要求1、3、5任一所述的高带外抑制高频表面贴装声表面横波谐振滤波器，其特征在于：每组声表面横波谐振滤波器的输入信号端和输出信号端分别位于不同的叉指换能器上。The high-band-suppression high-frequency surface mount acoustic surface transverse wave resonance filter according to any one of claims 1, 3 and 5, characterized in that: the input signal end and the output signal end of each set of acoustic surface transverse wave resonance filters are respectively Located on different interdigital transducers.
  8. 根据权利要求1、3、5任一所述的高带外抑制高频表面贴装声表面横波谐振滤波器，其特征在于：每个中间短路栅与叉指换能器的链接方式可是相同端的，也可是不同端的。The high-band-suppression high-frequency surface mount acoustic surface transverse wave resonance filter according to any one of claims 1, 3 or 5, wherein each of the intermediate short-circuit grids and the interdigital transducers are linked at the same end. , but also different ends.
  9. 根据权利要求1、3、5任一所述的高带外抑制高频表面贴装声表面横波谐振滤波器，其特征在于：所有声表面横波谐振滤波器封装在同一种类型的表面贴装外壳内，图形面朝上，用引线与表面贴装外壳连接。A high out-of-band suppressing high frequency surface mount acoustic surface transverse wave resonant filter according to any of claims 1, 3 or 5, wherein all acoustic surface transverse wave resonant filters are packaged in the same type of surface mount housing Inside, the graphic side faces up and is connected to the surface mount housing with leads.
  10. 根据权利要求1、3、5任一所述的高带外抑制高频表面贴装声表面横波谐振滤波器，其特征在于：所述压电基片材料为弱压电材料，如石英基片。 The high-bandwidth suppressing high-frequency surface mount acoustic surface shear wave resonator filter according to any one of claims 1, 3 or 5, wherein the piezoelectric substrate material is a weak piezoelectric material such as a quartz substrate. .
PCT/CN2016/075772 2015-05-20 2016-03-07 Harmonic filter suppressing high frequency higher harmonic of acoustic surface transverse wave WO2016184223A1 (en)

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PCT/CN2015/079382 WO2016090851A1 (en) 2014-12-13 2015-05-20 High-frequency surface-mounted acoustic surface transverse wave resonance filter having high out-of-band rejection
CNPCT/CN2015/079382 2015-05-20
CN201510802876.2A CN105306005B (en) 2014-12-13 2015-11-19 High out-of-side rejection Frequency Surface attachment sound surface transverse wave resonance filter
CN2015108028762 2015-11-19

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