WO2016184223A1 - Filtre d'harmonique supprimant une harmonique supérieure haute fréquence d'une onde acoustique de surface transverse - Google Patents

Filtre d'harmonique supprimant une harmonique supérieure haute fréquence d'une onde acoustique de surface transverse Download PDF

Info

Publication number
WO2016184223A1
WO2016184223A1 PCT/CN2016/075772 CN2016075772W WO2016184223A1 WO 2016184223 A1 WO2016184223 A1 WO 2016184223A1 CN 2016075772 W CN2016075772 W CN 2016075772W WO 2016184223 A1 WO2016184223 A1 WO 2016184223A1
Authority
WO
WIPO (PCT)
Prior art keywords
transverse wave
acoustic
wave resonator
finger
wave
Prior art date
Application number
PCT/CN2016/075772
Other languages
English (en)
Chinese (zh)
Inventor
周卫
朱明�
田亚睿
曾武
付金桥
马晋毅
陈峻
许东辉
冉川云
欧阳锋
黎亮
Original Assignee
中国电子科技集团公司第二十六研究所
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from PCT/CN2015/079382 external-priority patent/WO2016090851A1/fr
Application filed by 中国电子科技集团公司第二十六研究所 filed Critical 中国电子科技集团公司第二十六研究所
Publication of WO2016184223A1 publication Critical patent/WO2016184223A1/fr

Links

Images

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/64—Filters using surface acoustic waves

Definitions

  • the invention relates to a surface acoustic wave device, in particular to a high-bandout high-frequency surface-mounted acoustic surface transverse wave resonance filter, which is suitable for high-frequency narrow-band signal processing system with a frequency above 2 GHz, and belongs to the technical field of surface acoustic wave devices.
  • a surface acoustic wave transverse resonator comprising a quartz substrate and an intermediate shorting gate structure disposed between the transducers.
  • the acoustic surface transverse wave excited on the piezoelectric quartz substrate has a sound velocity 1.6 times higher than that of the Rayleigh type surface acoustic wave under the same process conditions, and the sound velocity on the piezoelectric quartz substrate can reach about 5000 m/s, so it is more suitable.
  • the surface acoustic wave transverse wave resonator filter is a narrow-band high-band-out-of-band suppression resonant filter developed on the basis of a surface acoustic wave transverse wave resonator. Compared with the resonator, it not only requires frequency, bandwidth, loss, etc., but is used as a filter. Inhibition performance other than passband is also required. Due to the limitation of its topological structure, the acoustic surface shear wave resonance has limited out-of-band rejection and cannot meet the high out-of-band rejection performance requirements.
  • High-bandout high-frequency surface mount acoustic surface transverse wave resonant filter including a chip packaged in a surface mount housing, the chip is provided with a surface acoustic wave transverse wave resonator filter, characterized in that: the acoustic surface transverse wave resonance filter
  • the two sets of acoustic surface shear wave resonator filters comprise two reflectors disposed on the piezoelectric substrate, two interdigital transducers and an intermediate shorting grid, and the intermediate shorting grid is located between the two interdigital transducers, two Reflection
  • the two sets of acoustic surface shear wave resonator filters are connected end to end; that is, one of the interdigital transducers of one set of surface acoustic wave transverse wave resonators resonates with the other set of acoustic surface transverse waves through the signal line An interdigital transducer connection of the filter.
  • the width of the finger of the intermediate short-circuit grid is smaller than the width of the finger of the interdigital transducer; two sets of surface acoustic wave transverse wave resonator filters are arranged along the sound propagation direction and separated by a certain distance; or are arranged in parallel and separated by a certain distance.
  • High-bandout high-frequency surface mount acoustic surface transverse wave resonant filter including a chip packaged in a surface mount housing, the chip is provided with a surface acoustic wave transverse wave resonator filter, characterized in that: the acoustic surface transverse wave resonance filter
  • the device is two groups, wherein the group A surface acoustic wave transverse wave resonance filter comprises two reflectors disposed on the piezoelectric substrate, a two-finger transducer and an intermediate short-circuit grid, and the intermediate short-circuit grid is located between the two-finger transducers.
  • the two reflectors are respectively located outside the two-finger transducers;
  • Group B surface acoustic wave transverse wave resonator filter comprises two reflectors, a three-finger finger transducer and two intermediate short-circuit grids arranged on the piezoelectric substrate and according to the reflector, the interdigital transducer, the intermediate short-circuit grid, the interdigital transducer , intermediate short-circuit grid, interdigital transducer, reflector arrangement; wherein the centered interdigital transducer acts as an input/output transducer for group B surface acoustic wave transverse wave resonator filters, and interdigital transducers on both sides Connected together by signal lines as output/input transducers for Group B surface acoustic wave transverse wave resonator filters;
  • Two sets of surface acoustic wave transverse wave resonator filters are connected end to end, that is, an interdigital transducer of group A surface acoustic wave transverse wave resonator filter is connected to the output transducer or input transducer of group B surface acoustic wave transverse wave resonator filter through signal line. .
  • the width of the finger of the intermediate short-circuit grid is smaller than the width of the finger of the interdigital transducer; two sets of surface acoustic wave transverse wave resonator filters are arranged in parallel and separated by a certain distance.
  • High-bandout high-frequency surface mount acoustic surface transverse wave resonant filter including a chip packaged in a surface mount housing, the chip is provided with a surface acoustic wave transverse wave resonator filter, characterized in that: the acoustic surface transverse wave resonance filter
  • the three sets of acoustic surface shear wave resonator filters comprise two reflectors, two interdigital transducers and an intermediate shorting grid disposed on the piezoelectric substrate, and the intermediate shorting grid is located between the two interdigital transducers, two The reflectors are respectively located outside the two-finger transducers; three sets of surface acoustic wave transverse wave resonator filters are connected end to end, that is, an interdigital transducer of the first set of surface acoustic wave transverse wave resonator filters passes the signal line and the second group of acoustic surface transverse waves One interdigital transducer of the resonant filter is connected, and the other interdigit
  • the width of the finger of the intermediate shorting grid is smaller than the width of the finger of the interdigital transducer; two sets of acoustic surface shear wave resonator filters along the sound The wave propagation directions are connected and separated by a certain distance.
  • the third set of acoustic surface shear wave resonator filters are connected in parallel with the previous two groups and separated by a certain distance; or three sets of surface acoustic wave transverse wave resonator filters are connected in parallel with each other and separated by a certain distance.
  • each set of surface acoustic wave transverse wave resonator filters are respectively located on different interdigital transducers.
  • Each intermediate shorting grid and the interdigital transducer can be linked at the same end or at different ends.
  • All surface acoustic wave resonator filters are packaged in the same type of surface mount enclosure with the graphics side facing up and connected to the surface mount housing with leads.
  • the piezoelectric substrate material is a weak piezoelectric material such as a quartz substrate.
  • the present invention has the following beneficial effects:
  • the surface acoustic wave mode of the intermediate short-circuit gate structure is adopted in the invention, and the acoustic wave surface transverse wave velocity is excited by 1.6 times higher than the Rayleigh-type surface acoustic wave velocity, which is particularly suitable for high-frequency devices.
  • the invention has at least two sets of intermediate short-circuit grids, and the connection manner of the intermediate short-circuit grids and the interdigital transducers may be the same end or different ends.
  • At least two sets of connection modes may be arranged along the direction of sound wave propagation, or may be arranged in parallel, and separated by a certain distance, which can reduce the space occupation of the device.
  • the present invention does not change the frequency temperature characteristics, and its passband frequency bandwidth, operating frequency and the like are almost unchanged, but the out-of-band rejection performance is improved.
  • the invention adopts the same piezoelectric quartz material, the same manufacturing process, and the out-of-band suppression performance is improved.
  • the present invention is packaged in a surface mount package to reduce the size.
  • FIG. 1 is a topological structural view of a high-bandout high-frequency surface-mounted acoustic surface transverse wave resonator filter chip according to the present invention, which is connected in parallel with the transverse wave propagation direction of the acoustic surface, wherein (a), (b), c), (d) are four different topologies.
  • FIG. 2 is a topological structural view of a high-bandout high-frequency surface-mounted acoustic surface transverse wave resonator filter chip according to the present invention, which is connected along a transverse wave propagation direction of the acoustic surface and separated by a certain distance, wherein (a), (b), (c), and (d) are four different topologies.
  • FIG. 3 is a high band out-suppressing high frequency surface mount acoustic surface transverse wave resonant filter chip embodiment 3 of the present invention
  • a topology diagram consisting of three sets of transducers and two sets of intermediate short-circuited gates connected in parallel with another set of resonant filters at a distance, (a), (b), (c), (d) Four different topologies respectively.
  • FIG. 4 is a topological structural view of a high-bandout high-frequency surface-mounted acoustic surface transverse wave resonator filter chip according to the present invention, in which three sets of resonant filters are connected in parallel and separated by a certain distance.
  • FIG. 5 is a topological structural view of a high-bandout high-frequency surface-mounted acoustic surface transverse wave resonator filter chip according to the present invention, wherein two sets of resonant filters in the three groups are arranged along the sound propagation direction, and then resonate with the third group.
  • the filters are set in parallel and separated by a certain distance.
  • Embodiment 6 is a schematic structural view of Embodiment 1 of a high-band-outside high-frequency surface-mounting acoustic surface transverse wave resonator filter (including a chip and a surface mount casing) according to the present invention.
  • FIG. 7 is a schematic structural view of Embodiment 2 of a high-bandout high-frequency surface-mounted acoustic surface transverse wave resonator filter (including a chip and a surface mount casing) according to the present invention.
  • Figure 8 is a graph showing the performance of the high-band outer high-frequency surface mount acoustic surface transverse wave resonator filter of the structure of Figures 1 and 2 of the present invention.
  • Figure 9 is a schematic view showing the structure of a high-band-out-suppression high-frequency surface-mounting acoustic surface transverse wave resonator filter (including a chip and a surface mount casing) according to the present invention.
  • Figure 10 is a schematic view showing the structure of a high-bandout high-frequency surface mount acoustic surface transverse wave resonator filter (including a chip and a surface mount casing) according to the present invention.
  • Figure 11 is a graph showing the performance of the high-bandout high-frequency surface mount acoustic surface transverse wave resonator filter of the structure of Figures 9 and 10 of the present invention.
  • Figure 12 is a schematic view showing the structure of a high-bandout high-frequency surface mount acoustic surface transverse wave resonator filter (including a chip and a surface mount casing) according to the present invention.
  • Figure 13 is a graph showing the performance of the high-bandout high-frequency surface mount acoustic surface transverse wave resonator filter of the structure of Figure 12 of the present invention.
  • the high-band-outside high-frequency surface-mounted acoustic surface transverse wave resonator filter of the present invention comprises a chip 1 packaged in a surface mount casing 21, the chip 1 is provided with a resonance filter, and the resonance filter comprises a piezoelectric quartz base.
  • Sheet 10 and reflector, transducer, intermediate shorting grid, reflector disposed on piezoelectric quartz substrate 10 They are respectively located outside the different transducers, and the width of the middle shorting gate is smaller than the width of the transducer and distributed between the transducers.
  • the transducer is provided with a grounding end and a signal end, and the input signal end and the output signal end of the resonant filter are respectively connected to the independent spot welding island of the outer casing.
  • the high-band-outside high-frequency surface-mounting surface acoustic wave transverse wave resonator filter of the present invention has various structures, mainly in the number, structure and arrangement of the resonator filters. The following are introduced separately.
  • the resonant filter is two groups of the same structure, and each set of acoustic surface transverse wave resonant filter comprises two reflectors, two interdigital transducers and an intermediate shorting grid disposed on the piezoelectric substrate, and two sets of acoustic surface transverse wave resonance
  • the filter is connected end to end, that is, one of the interdigital transducers of one set of surface acoustic wave transverse wave resonator filters is connected by signal lines to an interdigital transducer of another set of surface acoustic wave transverse wave resonator filters.
  • the two sets of resonant filters are arranged along the direction of sound propagation, as shown in Figure 2, where (a), (b), (c), (d) are respectively four different topologies. Or connected parallel to the direction of sound propagation, and separated by a certain distance, that is, as shown in Figure 1, where (a), (b), (c), (d) are respectively four different topologies.
  • the difference between (a), (b), (c), and (d) in FIGS. 1 and 2 is that the connection between the intermediate short-circuit grid and the transducer is different.
  • Each intermediate shorting grid and the transducer can be connected at the same end or at different ends.
  • the resonant filter is two groups of different structures, wherein the group A comprises two reflectors disposed on the piezoelectric substrate, the two-finger transducers and the intermediate short-circuit grids; and the group B comprises two reflections disposed on the piezoelectric substrate.
  • the three-finger transducer and the two intermediate short-circuit grids are arranged in a manner of a reflector, an interdigital transducer, an intermediate short-circuit grid, an interdigital transducer, an intermediate short-circuit grid, an interdigital transducer, and a reflector;
  • the centered interdigital transducer acts as an input/output transducer for the B-group acoustic surface shear wave resonator filter, and the interdigital transducers on both sides are connected together by signal lines as the output of the B-group acoustic surface shear wave resonator filter / Input transducer;
  • two sets of surface acoustic wave transverse wave resonator filters are connected end to end, that is, an interdigital transducer of group A surface acoustic wave transverse wave resonator filter passes signal line and output transducer of group B surface acoustic wave transverse wave resonator filter or Enter the transducer connection.
  • the two sets of resonant filters are arranged in parallel, as shown in the various structures shown in FIG. At this time, the two sets of resonant filters are separated by a certain distance, wherein (a), (b), (c), and (d) are respectively four different topologies.
  • the resonant filter is three groups of the same structure, and each set of acoustic surface transverse wave resonant filter comprises two reflectors, a two-finger transducer and an intermediate short-circuit grid disposed on the piezoelectric substrate.
  • Three sets of surface acoustic wave transverse wave resonator filters are connected end to end, that is, an interdigital transducer of the first set of surface acoustic wave transverse wave resonator filters is connected by a signal line to an interdigital transducer of the second set of surface acoustic wave transverse wave resonator filters, The other interdigital transducer of the second set of surface acoustic wave transverse wave resonator filters is coupled to an interdigital transducer of the third set of surface acoustic wave transverse wave resonator filters by signal lines.
  • the three sets of resonant filters are arranged parallel to each other and separated by a certain distance, as shown in FIG.
  • two sets of resonant filters in the three sets of structures are arranged along the direction of sound wave propagation, and the third set is parallel and spaced apart by a certain distance, as shown in FIG.
  • the chip structure is housed in the same surface mount housing with the chip pattern facing up and connected to the housing by leads.
  • the input signal end and the output signal end of the chip are respectively connected to the independent spot welding islands of different surface gold plating of the surface mounting shell, and the grounding end of the chip is connected with the bottom plate of the surface mounting outer casing to form a large area common ground, thereby improving the out-of-band suppression performance.
  • the leads are made of the same material and may be made of aluminum or gold. All leads can be either two-lead or single-lead.
  • the piezoelectric substrate is a weak piezoelectric material such as a quartz substrate.
  • the present invention employs two or more types of surface transverse wave structures having intermediate short-circuit gates, the acoustic surface transverse wave mode such as the double transducer mode described in US 4965479, the finger width of the intermediate shorting gate is smaller than the width of the interdigital transducer fingers, and the excitation
  • the surface shear wave with a speed of up to 5000 m/s is 1.6 times higher than the Rayleigh type surface acoustic wave, which is especially suitable for high frequency band operation.
  • At least two sets of topological resonant filters have improved out-of-band rejection.
  • the grounding lead is directly connected to the gold-plated substrate of the surface mount housing to form a large-area common ground, which further improves the out-of-band rejection performance and satisfies the requirement of high-band rejection of the resonant filter.
  • chip 1 piezoelectric quartz substrate 10; reflectors 101, 105, 106, 110; 201, 205, 206, 210; 301, 307, 308, 312; 401, 405, 406 , 410, 411, 415; 501, 505, 506, 510, 511, 515; transducers 102, 104, 107, 109; 202, 204, 207, 209; 302, 304, 306, 309, 311; 402, 404, 407, 409, 412, 414; 502, 504, 507, 509, 512, 514; intermediate shorting gates 103, 108; 203, 208; 303, 305, 310; 403, 408, 413; 503, 508, 513 Signal connection lines 120, 122, 124; input signal line 201; output signal line 202.
  • Embodiment 6 is a schematic structural view of Embodiment 1 of a high-band-outside high-frequency surface-mounting acoustic surface transverse wave resonator filter (including a chip and a surface mount casing) according to the present invention.
  • FIG. 7 is a schematic structural view of Embodiment 2 of a high-bandout high-frequency surface-mounted acoustic surface transverse wave resonator filter (including a chip and a surface mount casing) according to the present invention.
  • Figure 8 is a high-outband high-frequency surface mount acoustic surface transverse wave resonance filter of the structure of Figure 1 and Figure 2 of the present invention; Wave performance graph.
  • Figure 9 is a schematic view showing the structure of a high-band-out-suppression high-frequency surface-mounting acoustic surface transverse wave resonator filter (including a chip and a surface mount casing) according to the present invention.
  • Figure 10 is a schematic view showing the structure of a high-bandout high-frequency surface mount acoustic surface transverse wave resonator filter (including a chip and a surface mount casing) according to the present invention.
  • Figure 11 is a graph showing the performance of the high-bandout high-frequency surface mount acoustic surface transverse wave resonator filter of the structure of Figures 9 and 10 of the present invention.
  • Figure 12 is a schematic view showing the structure of a high-bandout high-frequency surface mount acoustic surface transverse wave resonator filter (including a chip and a surface mount casing) according to the present invention.
  • Figure 13 is a graph showing the performance of the high-bandout high-frequency surface mount acoustic surface transverse wave resonator filter of the structure of Figure 12 of the present invention.
  • the present invention adopts two or more types of top surface acoustic wave transverse wave resonance filters, and has high out-of-band rejection performance in a high frequency band.
  • the input signal and output signal are connected to the surface mount housing via leads.
  • the passband performance of the resonant filter such as piezoelectric quartz substrate material, device frequency, bandwidth and other characteristics are basically unchanged, and the out-of-band rejection performance of the resonant filter is greatly improved.

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)

Abstract

L'invention porte sur un filtre d'harmonique qui supprime une harmonique supérieure haute fréquence d'une onde acoustique de surface transverse et qui comporte une puce (1) encapsulée dans un boîtier de montage en surface (21) et comprenant au moins deux filtres à ondes acoustiques de surface transverses agencés sur elle, les filtres à ondes acoustiques de surface transverses étant tous connectés en série les uns aux autres, et les largeurs de doigt de réseaux courts intermédiaires (103), (108) de chacun des filtres à ondes acoustiques de surface transverses étant inférieures aux largeurs de doigt de transducteurs interdigités à doigts inclinés (102), (104), (107), (109). Le filtre d'harmonique fournit une meilleure suppression hors bande, améliore l'efficacité de suppression hors bande et satisfait l'exigence d'assurer une haute suppression hors bande lors d'un fonctionnement à une haute fréquence. Des composants du filtre harmonique peuvent être agencés selon au moins deux types de connexion, comprenant l'agencement des composants dans une direction de propagation d'une onde acoustique, ou l'agencement des composants en parallèle et séparés par une certaine distance, ce qui permet de réduire l'espace occupé par les composants.
PCT/CN2016/075772 2015-05-20 2016-03-07 Filtre d'harmonique supprimant une harmonique supérieure haute fréquence d'une onde acoustique de surface transverse WO2016184223A1 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
CNPCT/CN2015/079382 2015-05-20
PCT/CN2015/079382 WO2016090851A1 (fr) 2014-12-13 2015-05-20 Filtre résonant à ondes acoustiques de surface transversales haute fréquence pour montage en surface à forte réjection hors bande
CN201510802876.2A CN105306005B (zh) 2014-12-13 2015-11-19 高带外抑制高频表面贴装声表面横波谐振滤波器
CN2015108028762 2015-11-19

Publications (1)

Publication Number Publication Date
WO2016184223A1 true WO2016184223A1 (fr) 2016-11-24

Family

ID=57321007

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2016/075772 WO2016184223A1 (fr) 2015-05-20 2016-03-07 Filtre d'harmonique supprimant une harmonique supérieure haute fréquence d'une onde acoustique de surface transverse

Country Status (1)

Country Link
WO (1) WO2016184223A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116633312A (zh) * 2023-07-24 2023-08-22 常州承芯半导体有限公司 滤波器及滤波器的形成方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4965479A (en) * 1987-01-12 1990-10-23 Hewlett-Packard Company Surface transverse wave resonator
CN1272000A (zh) * 1999-04-28 2000-11-01 株式会社村田制作所 表面声波谐振器、复合表面声波滤波器和表面声波滤波器
CN103078603A (zh) * 2013-02-06 2013-05-01 中国电子科技集团公司第二十六研究所 一种具有高功率承受力的声表面波滤波器
CN104184431A (zh) * 2014-09-10 2014-12-03 中国电子科技集团公司第二十六研究所 高频陶瓷表面贴装声表面横波谐振滤波器
CN104639092A (zh) * 2014-12-13 2015-05-20 中国电子科技集团公司第二十六研究所 高带外抑制高频表面贴装声表面横波谐振滤波器

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4965479A (en) * 1987-01-12 1990-10-23 Hewlett-Packard Company Surface transverse wave resonator
CN1272000A (zh) * 1999-04-28 2000-11-01 株式会社村田制作所 表面声波谐振器、复合表面声波滤波器和表面声波滤波器
CN103078603A (zh) * 2013-02-06 2013-05-01 中国电子科技集团公司第二十六研究所 一种具有高功率承受力的声表面波滤波器
CN104184431A (zh) * 2014-09-10 2014-12-03 中国电子科技集团公司第二十六研究所 高频陶瓷表面贴装声表面横波谐振滤波器
CN104639092A (zh) * 2014-12-13 2015-05-20 中国电子科技集团公司第二十六研究所 高带外抑制高频表面贴装声表面横波谐振滤波器
CN105306005A (zh) * 2014-12-13 2016-02-03 中国电子科技集团公司第二十六研究所 高带外抑制高频表面贴装声表面横波谐振滤波器

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116633312A (zh) * 2023-07-24 2023-08-22 常州承芯半导体有限公司 滤波器及滤波器的形成方法
CN116633312B (zh) * 2023-07-24 2023-10-24 常州承芯半导体有限公司 滤波器及滤波器的形成方法

Similar Documents

Publication Publication Date Title
JP5942740B2 (ja) ラダー型フィルタ及び分波器
JP5765501B1 (ja) デュプレクサ
JP6504551B2 (ja) 共振器、フィルタおよび分波器
US9166556B2 (en) Elastic wave device
JP6332101B2 (ja) 弾性表面波フィルタ
CN109787579B (zh) 一种具有减小杂散功能的saw谐振器
CN108649920A (zh) 压电声波谐振器、压电声波滤波器、双工器及射频通信模块
JP6760480B2 (ja) エクストラクタ
JP5695191B2 (ja) 弾性波デバイスおよびモジュール
CN107528564A (zh) 声波谐振器、滤波器和多工器
WO2016090851A1 (fr) Filtre résonant à ondes acoustiques de surface transversales haute fréquence pour montage en surface à forte réjection hors bande
WO2023124624A1 (fr) Filtre d'onde acoustique de surface
JP6935220B2 (ja) 弾性波素子、フィルタおよびマルチプレクサ
JPH03222512A (ja) 有極形ｓａｗ共振器フィルタ
WO2016184223A1 (fr) Filtre d'harmonique supprimant une harmonique supérieure haute fréquence d'une onde acoustique de surface transverse
CN108512525A (zh) 一种声表面横波谐振滤波器
WO2024041114A1 (fr) Filtre à ondes acoustiques de surface
CN210405246U (zh) 一种声波器件及滤波装置
JP6178972B2 (ja) ローパス特性を有する電子音響フィルタ
CN203504508U (zh) 用于移动电话的声表面波滤波器
JP2000049558A (ja) 弾性表面波フィルタ
JP2004516703A (ja) トランスバーサルモード結合型共振器フィルタ
US11742830B2 (en) Elastic wave device
CN117277988B (zh) 横向耦合声学滤波器
KR100503955B1 (ko) 표면파 장치

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 16795710

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 16795710

Country of ref document: EP

Kind code of ref document: A1