CN104639092A - High-frequency surface-mounted acoustic surface transverse wave resonance filter with high out-of-band rejection - Google Patents
High-frequency surface-mounted acoustic surface transverse wave resonance filter with high out-of-band rejection Download PDFInfo
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- CN104639092A CN104639092A CN201410762551.1A CN201410762551A CN104639092A CN 104639092 A CN104639092 A CN 104639092A CN 201410762551 A CN201410762551 A CN 201410762551A CN 104639092 A CN104639092 A CN 104639092A
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- resonance filter
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- transverse wave
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
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- Acoustics & Sound (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
The invention discloses a high-frequency surface-mounted acoustic surface transverse wave resonance filter with high out-of-band rejection. The high-frequency surface-mounted acoustic surface transverse wave resonance filter comprises a chip encapsulated in a shell. A first-level resonance filter body and a second-level resonance filter body are disposed on the chip. The two resonance filter bodies shares one piezoelectric quartz substrate. The output transducer signal output lead electrode of the first-level resonance filter body is connected with the input transducer signal input lead electrode of the second-level resonance filter body. The high-frequency surface-mounted acoustic surface transverse wave resonance filter has the advantages that the out-of-band rejection is increased greatly, out-of-band rejection performance is improved, and the out-of-band rejection requirements during high-frequency work are satisfied.
Description
Technical field
The present invention relates to SAW (Surface Acoustic Wave) device, especially a kind of high out-of-side rejection Frequency Surface attachment sound surface transverse wave resonance filter, belongs to SAW (Surface Acoustic Wave) device technical field.
Background technology
Surface acoustic wave has the velocity of wave of five orders of magnitude slower in electromagnetic wave, and its operating frequency is higher, for encouraging the transducer finger width of surface acoustic wave signal narrower.When operating frequency reaches more than a Gigahertz, its finger width is just confined to less than one micron, and this adds difficulty to manufacture craft.Since American T.L.Bagwell and R.C.Bray in 1987 has reported the sound surface transverse wave resonator developed on quartz piezoelectric substrate and have practical value first, sound surface transverse wave device is widely applied as resonator, pole narrow band resonances filter etc., and the frequency range be particularly operated in higher than a Gigahertz has obvious advantage.The sound surface transverse wave that piezoelectric quartz substrate encourages adds to make to plunder face bulk wave and clamped down on to surface and propagate between input transducer and output transducer, instead of go deep into the short-circuit gate structure propagated in wafer.Sound surface transverse wave, under same process condition, has the velocity of sound of higher than Rayleigh-type surface acoustic wave 1.6 times, therefore, more adapts to make high-frequency device.Sound surface transverse wave resonance filter is on the basis of sound surface transverse wave resonator, the pole narrow band resonances filter with certain bandwidth developed, compared with resonator, does not singly require the performance such as frequency, bandwidth, loss, use as filter, also require the rejection beyond passband.Single-stage sound surface transverse wave resonance filter is owing to being subject to the restriction of its topological structure, and its Out-of-band rejection is limited, can not meet high out-of-side rejection performance requirement.
Summary of the invention
For prior art above shortcomings, the object of the present invention is to provide a kind of high out-of-side rejection Frequency Surface attachment sound surface transverse wave resonance filter, this resonance filter Out-of-band rejection improves greatly, improves Out-of-band rejection performance, meets the requirement of high out-of-side rejection when high-frequency work.
To achieve these goals, the technical solution used in the present invention is as follows:
High out-of-side rejection Frequency Surface attachment sound surface transverse wave resonance filter, comprise encapsulation chip in the enclosure, described chip is provided with resonance filter, resonance filter comprises piezoelectric quartz substrate and is arranged on piezoelectric quartz on-chip input transducer reflector, input transducer, middle short-circuit gate, output transducer, output transducer reflector, input transducer is provided with ground lead electrode and signal input lead electrode, output transducer is provided with ground lead electrode and signal output lead electrode, it is characterized in that: described resonance filter is two, be respectively first order resonance filter and second level resonance filter, two resonance filters share one piece of piezoelectric quartz substrate, the output transducer signal output lead electrode of first order resonance filter and the input transducer signal input lead Electrode connection of second level resonance filter, piezoelectric quartz substrate is provided with six external lead wires, and first order resonance filter input transducer ground lead electrode, first order resonance filter signal input lead electrode, first order resonance filter output transducer ground lead electrode, second level resonance filter input transducer ground lead electrode, second level resonance filter output transducer ground lead electrode, second level resonance filter signal output lead electrode are connected one by one with six external lead wires respectively, all ground lead electrodes are connected directly between on the gold-plated base plate of shell by respective lead-in wire, and first order resonance filter signal input lead electrode and second level resonance filter signal output lead electrode to be connected on shell on independent gold-plated spot welding island by respective lead-in wire.
Six lead-in wire electrodes wherein three input signal ends being placed in first order resonance filter input transducer end reflector and input transducer respectively, input transducer end reflector and input transducer output signal end, the reflector of output transducer end and the earth terminal of output transducer, another three lead-in wire electrodes are placed in second level resonance filter input transducer end reflector respectively and input the earth terminal of the earth terminal of transducer, the reflector of output transducer and the output signal end of output transducer, the reflector of output transducer and output transducer.
All lead-in wires are identical material lead-in wire.
The lead-in wire that the ground lead electrode pair of described input transducer and output transducer is answered is single lead-in wire or double lead.
The signal output part of first order resonance filter output transducer is parallel to the sound surface transverse wave direction of propagation with second level resonance filter signal input part and is connected, and may also be to intersect to connect across the sound surface transverse wave direction of propagation.
The middle short-circuit gate of two-stage resonance filter and the connected mode of respective transducer are equidirectional, may also be different directions.
Compared to existing technology, the present invention has following beneficial effect:
1, all ground leads of two-stage sound surface transverse wave resonance filter are connected directly between on the gold-plated base plate of shell, form large area short circuit grounding, and be connected to ground without shell spot welding island, thus the Out-of-band rejection of sound surface transverse wave resonance filter when frequency applications is greatly improved, more than 20 points of shellfishes are improved than the Out-of-band rejection performance of single-stage sound surface transverse wave resonance filter, more than the frequency range being greater than two Gigahertzs, the Out-of-band rejection of test can reach more than 50 points of shellfishes.
2, two-stage sound surface transverse wave resonance filter topological structure is produced on same piezoelectric quartz substrate, and joins end to end, and the Acoustic Wave Propagation direction of two-stage sound surface transverse wave resonance filter is identical.
3, the resonance filter of two-stage sound surface transverse wave resonance filter topological structure on piezoelectric quartz substrate, compared with single-stage sound surface transverse wave resonator, not changing its single order temperature coefficient is the feature of zero, its character such as bandwidth, operating frequency also can not change, but Out-of-band rejection performance is greatly enhanced.
4, high out-of-side rejection sound surface transverse wave resonance filter of the present invention is compared with original single-stage, can not change piezoelectric quartz chip size, shell package dimension, and Out-of-band rejection performance improves.
Accompanying drawing explanation
Fig. 1 is high out-of-side rejection Frequency Surface attachment sound surface transverse wave resonance filter chip schematic diagram of the present invention, and wherein (a) and (b), (c), (d) are respectively four kinds of different topology structures.
Fig. 2 is high out-of-side rejection Frequency Surface attachment sound surface transverse wave resonance filter pin configuration figure of the present invention, and wherein (a), (b), (c), (d) are respectively the high out-of-side rejection Frequency Surface attachment sound surface transverse wave resonator filter structure figure of four kinds of different topology structures.
Embodiment
The present invention is on the basis of single-stage sound surface transverse wave resonance filter, increase one-level sound surface transverse wave resonance filter, the Out-of-band rejection of the sound surface transverse wave resonance filter of two-layer configuration is improved greatly, improve Out-of-band rejection performance, meet the requirement of high out-of-side rejection when high-frequency work.Below in conjunction with accompanying drawing, the present invention is described in further detail.
Existing sound surface transverse wave resonance filter increases to two (being namely improved to two-stage by single-stage) by one by the present invention, is respectively the first order and the second level, see Fig. 1 (a), (b), (c), (d) and Fig. 2 (a), (b), (c), (d), upper as can be seen from figure, high out-of-side rejection Frequency Surface attachment sound surface transverse wave resonance filter of the present invention, comprise encapsulation chip in the enclosure (1), described chip (1) is provided with resonance filter topological structure, comprises piezoelectric quartz substrate (10) and is arranged on the reflector (11) that the on-chip first order of piezoelectric quartz inputs transducer, first order input transducer (12), short-circuit gate (13) in the middle of the first order, first order output transducer (14), the reflector (15) of first order output transducer, the reflector (16) of second level input transducer, second level input transducer (17), short-circuit gate (18) in the middle of the second level, second level output transducer (19), the reflector (20) of second level output transducer.First order input transducer is provided with signal input lead electrode (31) and ground lead electrode (33), first order output transducer and is provided with ground lead electrode (32) and signal output lead and the second level and inputs transducer link (37), second level input transducer ground lead electrode (34), second level output transducer wire ground electrode (35) and signal output lead electrode (36), and first order output transducer and the second level input the link (37) of transducer end.Piezoelectric quartz substrate (10) is provided with six outer leads, be respectively first order input transducer signal input lead (2), first order input transducer ground lead (3), first order output transducer ground lead (4), second level input transducer ground lead (5), second level output transducer ground lead (6), second level output transducer signal output lead (7), its lead-in wire Electrode connection corresponding with six respectively.All ground lead electrodes are connected directly between on the gold-plated base plate 21 of shell by respective lead-in wire, and first order input transducer signal input electrode (31) and second level output transducer signal output electrode (36) to be connected on the shell of the not gold-plated base plate short circuit with shell on independent spot welding island (613,617) by respective lead-in wire.
As can be seen from Figure 1, this chip topology structure puts in order as the reflector (11) of first order input transducer from left to right on piezoelectric quartz substrate (10), first order input transducer (12), short-circuit gate (13) in the middle of the first order, first order output transducer (14), the reflector (15) of first order output transducer, the reflector (16) of second level input transducer, second level input transducer (17), short-circuit gate (18) in the middle of the second level, second level output transducer (19), the reflector (20) of second level output transducer, first order output transducer signal output part and the second level input transducer signal input and are directly connected.Six lead-in wire electrodes (31, 32, 33, 34, 35, 36), wherein three are placed in the reflector of first order input transducer and the input signal end (31) of input transducer, the reflector of first order input transducer and the earth terminal (33) of input transducer, the reflector of first order output transducer and the earth terminal (32) of output transducer, another three outer lead electrodes are placed in the reflector of second level input transducer and the earth terminal (34) of input transducer, the reflector of second level output transducer and the output signal end (36) of output transducer, the reflector of second level output transducer and the earth terminal (35) of output transducer.
Except interconnective first order output transducer signal output part and the second level input except transducer signal input, this two-layer configuration also comprises following six outer leads: see Fig. 2, first order input transducer signal input lead (2), first order input transducer ground lead (3), first order output transducer ground lead (4), second level input transducer ground lead (5), second level output transducer ground lead (6), second level output transducer signal output lead (7).
From formation, this two-layer configuration is provided with six lead-in wires electrode (31,32,33,34,35,36), four groups of reflectors (11,15,16,20), four groups of transducers (12,14,17,19) and two middle short-circuit gates (13,18) on piezoelectric quartz substrate (10), be close to piezoelectric substrate (10) on the surface, see Fig. 2.
The 82 gold-plated spot welding island represented and shell bottom plate short circuits, label 21 represents the gold-plated base plate of shell, and all the other 612 ~ 619 represent the outer link of shell respectively.For high-frequency sound surface transverse wave device, original Frequency Surface attachment sound surface transverse wave resonance filter, be made up of single-stage sound surface transverse wave resonance filter, and the present invention adopts two-stage sound surface transverse wave resonance filter topological structure, its first order input transducer signal lead-in wire and second level output transducer signal lead are connected to the gold-plated spot welding island of independence of surface mount shell, the output transducer of the first order is directly connected with the input transducer of the second level, all the other ground leads are connected directly between on the gold-plated base plate 21 of surface mount shell, the Out-of-band rejection performance of the resonance filter obtained comparatively single-stage sound surface transverse wave resonance filter optimizes 20 points of shellfishes, in the frequency range being greater than two Gigahertzs, the Out-of-band rejection of test can reach more than 50 points of shellfishes.
The signal output part of first order output transducer of the present invention is parallel to the sound surface transverse wave direction of propagation with second level signal input part and is connected, see Fig. 1 (a) and (b) respectively, may also be and intersect across the connection of the sound surface transverse wave direction of propagation, see Fig. 1 (c), (d) respectively.
The mode that two-stage sound surface transverse wave resonance filter of the present invention middle short-circuit gate is separately connected with transducer, but equidirectional, be shown in Fig. 1 (b), (d), may also be different directions, see Fig. 1 (a), (c).
All ground lead, first order input transducer signal input lead and second level output transducer signal output leads be connected directly between on the gold-plated base plate of shell are identical material lead-in wire.
Described direct short-circuit is connected to the single lead-in wire of all ground leads on the gold-plated base plate of shell, may also be double lead.
The present invention adopts the chip topology structure of two-stage sound surface transverse wave resonance filter first, do not change the band-pass behavior of surface mount shell package dimension, resonance filter, as substantially constant in characteristics such as piezoelectric quartz substrate material, device frequency, loss, bandwidth.Just portion changes chip topology structure in the enclosure, make original single-stage sound surface transverse wave resonance filter, change into novel two-stage sound surface transverse wave resonance filter topological structure, input transducer and output transducer ground lead are connected directly between on the gold-plated base plate of shell, and the Out-of-band rejection performance of resonance filter improves greatly.
The above embodiment of the present invention is only for example of the present invention is described, and is not the restriction to embodiments of the present invention.For those of ordinary skill in the field, other multi-form change and variations can also be made on the basis of the above description.Here cannot give exhaustive to all execution modes.Every belong to technical scheme of the present invention the apparent change of amplifying out or variation be still in the row of protection scope of the present invention.
Claims (6)
1. high out-of-side rejection Frequency Surface attachment sound surface transverse wave resonance filter, comprise encapsulation chip in the enclosure, described chip is provided with resonance filter, resonance filter comprises piezoelectric quartz substrate and is arranged on piezoelectric quartz on-chip input transducer reflector, input transducer, middle short-circuit gate, output transducer, output transducer reflector, input transducer is provided with ground lead electrode and signal input lead electrode, output transducer is provided with ground lead electrode and signal output lead electrode, it is characterized in that: described resonance filter is two, be respectively first order resonance filter and second level resonance filter, two resonance filters share one piece of piezoelectric quartz substrate, the output transducer signal output lead electrode of first order resonance filter and the input transducer signal input lead Electrode connection of second level resonance filter, piezoelectric quartz substrate is provided with six external lead wires, and first order resonance filter input transducer ground lead electrode, first order resonance filter signal input lead electrode, first order resonance filter output transducer ground lead electrode, second level resonance filter input transducer ground lead electrode, second level resonance filter output transducer ground lead electrode, second level resonance filter signal output lead electrode are connected one by one with six external lead wires respectively, all ground lead electrodes are connected directly between on the gold-plated base plate of shell by respective lead-in wire, and first order resonance filter signal input lead electrode and second level resonance filter signal output lead electrode to be connected on shell on independent gold-plated spot welding island by respective lead-in wire.
2. high out-of-side rejection Frequency Surface attachment sound surface transverse wave resonance filter according to claim 1, it is characterized in that: six lead-in wire electrodes wherein three input signal ends being placed in first order resonance filter input transducer end reflector respectively and inputting transducer, input transducer end reflector and input transducer output signal end, the reflector of output transducer end and the earth terminal of output transducer, another three lead-in wire electrodes are placed in second level resonance filter input transducer end reflector and the earth terminal inputting transducer respectively, the reflector of output transducer and the output signal end of output transducer, the reflector of output transducer and the earth terminal of output transducer.
3. high out-of-side rejection Frequency Surface attachment sound surface transverse wave resonance filter according to claim 1, is characterized in that: institute is leaded is identical material lead-in wire.
4. high out-of-side rejection Frequency Surface attachment sound surface transverse wave resonance filter according to claim 1, is characterized in that: the lead-in wire that the ground lead electrode pair of described input transducer and output transducer is answered is single lead-in wire or double lead.
5. high out-of-side rejection Frequency Surface attachment sound surface transverse wave resonance filter according to claim 1, it is characterized in that: the signal output part of first order resonance filter output transducer is parallel to the sound surface transverse wave direction of propagation with second level resonance filter signal input part and is connected, may also be intersection and connect across the sound surface transverse wave direction of propagation.
6. high out-of-side rejection Frequency Surface attachment sound surface transverse wave resonance filter according to claim 1, is characterized in that: the middle short-circuit gate of two-stage resonance filter and the connected mode of respective transducer are equidirectional, may also be different directions.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410762551.1A CN104639092A (en) | 2014-12-13 | 2014-12-13 | High-frequency surface-mounted acoustic surface transverse wave resonance filter with high out-of-band rejection |
| PCT/CN2015/079382 WO2016090851A1 (en) | 2014-12-13 | 2015-05-20 | High-frequency surface-mounted acoustic surface transverse wave resonance filter having high out-of-band rejection |
| CN201510802876.2A CN105306005B (en) | 2014-12-13 | 2015-11-19 | High out-of-side rejection Frequency Surface attachment sound surface transverse wave resonance filter |
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| CN201410762551.1A CN104639092A (en) | 2014-12-13 | 2014-12-13 | High-frequency surface-mounted acoustic surface transverse wave resonance filter with high out-of-band rejection |
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| CN104639092A true CN104639092A (en) | 2015-05-20 |
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| CN201410762551.1A Pending CN104639092A (en) | 2014-12-13 | 2014-12-13 | High-frequency surface-mounted acoustic surface transverse wave resonance filter with high out-of-band rejection |
| CN201510802876.2A Active CN105306005B (en) | 2014-12-13 | 2015-11-19 | High out-of-side rejection Frequency Surface attachment sound surface transverse wave resonance filter |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016184223A1 (en) * | 2015-05-20 | 2016-11-24 | 中国电子科技集团公司第二十六研究所 | Harmonic filter suppressing high frequency higher harmonic of acoustic surface transverse wave |
| CN109379056A (en) * | 2018-12-03 | 2019-02-22 | 全讯射频科技(无锡)有限公司 | A kind of SAW filter |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108512525B (en) * | 2018-04-18 | 2022-02-11 | 中国电子科技集团公司第二十六研究所 | Sound surface transverse wave resonant filter |
| CN112532203A (en) * | 2020-12-25 | 2021-03-19 | 中国电子科技集团公司第二十六研究所 | Tin-gold barrier structure of surface acoustic wave device packaged at chip level and processing method thereof |
| CN113839645B (en) * | 2021-11-26 | 2022-03-01 | 深圳新声半导体有限公司 | Method for improving out-of-band rejection of bulk acoustic wave filter and filter structure |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3353742B2 (en) * | 1999-05-07 | 2002-12-03 | 株式会社村田製作所 | Surface wave resonator, surface wave device, communication device |
| JP3432492B2 (en) * | 2000-09-28 | 2003-08-04 | 富士通株式会社 | Surface acoustic wave resonator and surface acoustic wave filter using the same |
| JP3846409B2 (en) * | 2002-02-15 | 2006-11-15 | 株式会社村田製作所 | Surface acoustic wave device, communication device |
| JP3963862B2 (en) * | 2003-05-20 | 2007-08-22 | 富士通メディアデバイス株式会社 | Surface acoustic wave filter and duplexer having the same |
| DE102009009484B4 (en) * | 2009-02-19 | 2014-07-17 | Epcos Ag | Dual-channel SAW filter |
| CN202652160U (en) * | 2012-07-20 | 2013-01-02 | 中国电子科技集团公司第二十六研究所 | High-frequency surface acoustic transverse wave resonator with piezoelectric quartz substrate |
| CN203027218U (en) * | 2013-02-06 | 2013-06-26 | 中国电子科技集团公司第二十六研究所 | Surface acoustic wave filter |
| CN204046542U (en) * | 2014-09-10 | 2014-12-24 | 中国电子科技集团公司第二十六研究所 | High-frequency ceramic surface mount sound surface transverse wave resonance filter |
| CN104184431B (en) * | 2014-09-10 | 2017-02-15 | 中国电子科技集团公司第二十六研究所 | High-frequency ceramic surface mounting transverse surface acoustic wave resonance filter |
-
2014
- 2014-12-13 CN CN201410762551.1A patent/CN104639092A/en active Pending
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2015
- 2015-05-20 WO PCT/CN2015/079382 patent/WO2016090851A1/en active Application Filing
- 2015-11-19 CN CN201510802876.2A patent/CN105306005B/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016184223A1 (en) * | 2015-05-20 | 2016-11-24 | 中国电子科技集团公司第二十六研究所 | Harmonic filter suppressing high frequency higher harmonic of acoustic surface transverse wave |
| CN109379056A (en) * | 2018-12-03 | 2019-02-22 | 全讯射频科技(无锡)有限公司 | A kind of SAW filter |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105306005B (en) | 2018-09-28 |
| WO2016090851A1 (en) | 2016-06-16 |
| CN105306005A (en) | 2016-02-03 |
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Application publication date: 20150520 |