WO2016180007A1 - 反应腔室及半导体加工设备 - Google Patents

反应腔室及半导体加工设备 Download PDF

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Publication number
WO2016180007A1
WO2016180007A1 PCT/CN2015/096194 CN2015096194W WO2016180007A1 WO 2016180007 A1 WO2016180007 A1 WO 2016180007A1 CN 2015096194 W CN2015096194 W CN 2015096194W WO 2016180007 A1 WO2016180007 A1 WO 2016180007A1
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WIPO (PCT)
Prior art keywords
substrate
reaction chamber
pressure ring
support
base
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PCT/CN2015/096194
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English (en)
French (fr)
Inventor
李冬冬
郭浩
徐奎
陈鹏
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北京北方微电子基地设备工艺研究中心有限责任公司
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Publication of WO2016180007A1 publication Critical patent/WO2016180007A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches

Definitions

  • the invention belongs to the technical field of microelectronic processing, and in particular relates to a reaction chamber and a semiconductor processing device.
  • a pre-clean process is required to remove impurities on the surface of the substrate before the process.
  • the quality of the process of the subsequent deposition process is ensured to ensure the performance of the semiconductor device.
  • the basic principle of the pre-cleaning process is that an inductively coupled plasma generating device is generally used to excite a process gas in a chamber to form a highly reactive and/or high-energy plasma by using a high-voltage alternating electric field generated by a radio frequency power source, by means of the plasma. Chemical reaction and/or physical bombardment occurs on the surface of the substrate to remove impurities from the surface of the substrate.
  • FIG. 1a is a schematic structural view of a conventional pre-cleaning chamber in a transfer state
  • FIG. 1b is a structural schematic view of a conventional pre-cleaning chamber in a process state.
  • the pre-cleaning chamber is provided with a base 10 and a thimble mechanism having a cooling function.
  • the susceptor 10 is used to carry the substrate S, and it can be raised and lowered between the transfer position and the process position, and the transfer position and the process position respectively refer to the position of the pedestal 10 in FIG. 1a and FIG.
  • the sheet position refers to the position at which the susceptor 10 is placed to mount the substrate S; the so-called process position refers to the position at which the substrate 10 on which the susceptor 10 is placed is subjected to a pre-cleaning process.
  • 2 is a perspective structural view of a conventional ejector mechanism. Referring to FIG. 2, the ejector mechanism includes a plurality of ejector pins 11 for carrying a substrate S.
  • the pedestal 10 is provided with a through hole corresponding to the thimble 11 in one-to-one correspondence.
  • Each of the thimbles 11 is capable of penetrating a through hole corresponding thereto, and at the transfer position of the susceptor 10 At the time, the top end of the ejector pin 11 is higher than the upper surface of the base 10 and is at the same height as the film opening port 12 provided on the side wall of the pre-cleaning chamber.
  • the process of the pre-cleaning chamber is specifically: first, the pre-cleaning chamber is in the state shown in FIG.
  • the robot carrying the substrate S loads the substrate S onto the thimble 11 via the transfer opening 12;
  • the susceptor 10 rises toward the process position, and when it rises to lift the substrate S on the ejector 11, the substrate S is carried by the susceptor 10; the pedestal 10 will After the substrate S is lifted up, it continues to rise until it reaches the process position; finally, after the susceptor 10 is at the process position, the process gas is introduced and the RF power source is loaded to perform the pre-cleaning process until the end of the process.
  • the contact surface of the substrate S and the susceptor 10 has a low flatness, the two cannot be sufficiently contacted, and the environmental pressure of the pre-cleaning process is very low, generally in the millitorr stage.
  • the amount of gas between the substrate S and the susceptor 10 is small, which makes the heat transfer between the two mainly rely on the heat conduction of heat radiation and a small amount of gas, thereby causing heat transfer between the substrate S and the susceptor 10. Low, therefore, as the pre-cleaning process continues, the temperature of the substrate S continues to rise, causing damage to the substrate S when the temperature rises to a certain extent.
  • the prior art generally adopts the following method: after the pre-cleaning process is paused for a period of time, the cooling step is started, and the pre-cleaning chamber is inflated to bring the chamber pressure to several tens of Torr, so that the substrate S and the pedestal The gas between 10 increases, thereby accelerating the heat conduction between the two gases, and the substrate S is rapidly cooled; then the pre-cleaning process is continued, that is, the pre-cleaning chamber is evacuated, so that the pressure of the chamber reaches the millitorr The stage is pre-cleaned; thus the pre-cleaning process is periodically suspended during the pre-cleaning process and the cooling step is added until the pre-cleaning process is completed.
  • the invention aims to at least solve one of the technical problems existing in the prior art, and proposes a reaction chamber and a semiconductor processing device, which can realize the cooling of the substrate while the process is performed, and thus does not need to be periodic in the process.
  • the process is suspended to increase the cooling step, so that the process time can be greatly reduced under the premise of ensuring effective cooling of the substrate, thereby increasing the productivity of the semiconductor processing equipment, thereby improving economic efficiency.
  • the present invention provides a reaction chamber in which a base for carrying a substrate and a pressure ring are disposed; and the base is provided with a gas source connected to the back blow a back blowing pipe; an annular sealing device is disposed on an upper surface of the base; and the pressure ring is laminated on an edge region of the substrate when the base drives the substrate up and lifts the pressing ring
  • the annular sealing device is in contact with the back surface of the substrate such that the upper surface of the base inside the annular sealing device forms a sealed space with the back surface of the substrate, and the back blowing gas provided by the back blowing gas source passes through the back A blow line is delivered into the sealed space.
  • the back-blowing line has a plurality of outlets provided on an upper surface of the base, and each of the outlets is disposed near a center of the base; on an upper surface of the base Provided thereon with annular grooves disposed along a circumferential direction thereof and strip-shaped grooves corresponding to the output ports, the annular grooves being located inside the annular sealing device, each of the strip-shaped grooves The two ends are respectively connected to the annular groove and the output port corresponding thereto.
  • the annular sealing device is an annular corner formed by cutting at an edge region of the upper surface of the base, and the upper surface of the base of the inner side of the annular corner is lower than the ring edges and corners.
  • a support member for supporting the pressure ring is further disposed in the reaction chamber, the support member includes a support column, a support ring and a plurality of support rods, wherein the plurality of the support members a rod is disposed on the support ring and disposed along a circumferential interval of the support ring for supporting the pressure ring; an inner diameter of the support ring is larger than a diameter of the base, surrounding an outer circumference of the base.
  • the annular outer liner is disposed with a plurality of first through holes respectively corresponding to the support rods, and each of the support rods passes through the corresponding first through holes and cooperates with the pressure ring, and the The support rod is in a clearance fit with the first through hole; the support column is for supporting the support ring.
  • a plurality of blind holes are disposed on a lower surface of the pressure ring, and each of the blind holes is disposed at a position of a lower surface of the pressure ring that is in contact with the support rod; each of the blind The hole is for receiving the top end of the support rod corresponding thereto.
  • an edge portion of a lower surface of the pressure ring is provided with a convex portion, the blind hole is disposed on the convex portion; and when the pressure ring is laminated on an edge region of the substrate, the convex portion The lower end surface covers the first through hole.
  • the annular outer liner is provided with a plurality of second through holes respectively corresponding to the thimbles, and each of the thimbles passes through a corresponding second through hole when the substrate is loaded and unloaded, and the thimble is
  • the top surface is higher than the lower surface of the pressing ring than the lower surface of the pressure ring, and the thimble and the second through hole are in a clearance fit.
  • the plurality of thimbles are disposed on the support ring and spaced along a circumferential direction of the support ring.
  • the support member serves as a lining of the reaction chamber
  • the support member is disposed around an inner peripheral wall of the reaction chamber, and the support member has an opening facing upward and surrounding the reaction chamber
  • An annular groove provided in the peripheral wall; an outer diameter of the pressure ring is larger than an inner diameter of the annular groove; the pressure ring is overlapped on an inner ring wall of the annular groove; at the bottom of the annular groove
  • An elastic portion is further disposed between the outer edge of the pressure ring and a downward elastic force is applied to the pressure ring by the elastic member being stretched when the pressure ring is laminated on the substrate.
  • the present invention also provides a semiconductor processing apparatus including a reaction chamber which employs the above-described reaction chamber.
  • the invention provides a reaction chamber for moving the substrate away from the pressure ring when loading and unloading the substrate, so as to facilitate loading and unloading the substrate to the base; and, during the process, the pressure ring is laminated on the edge region of the substrate, and the annular seal
  • the back contact of the device with the substrate causes the upper surface of the pedestal inside the annular sealing device to form a sealed space with the back surface of the substrate, which can realize not only the base gas can be blown or blown by the back blowing gas.
  • the reaction chamber provided by the present invention increases the back blowing gas between the substrate and the susceptor during the process, and the back blowing gas can be performed between the substrate and the susceptor as compared with the prior art reaction chamber.
  • Heat conduction that is, the cooling of the substrate can be realized at the same time of the process, that is, it is not necessary to periodically suspend the process during the process to increase the cooling step, thereby greatly reducing the process time while ensuring effective cooling of the substrate.
  • the productivity of the semiconductor processing equipment can be increased, and the economic efficiency can be improved.
  • the semiconductor processing apparatus provided by the present invention can realize the process time which can greatly reduce the process time under the premise of ensuring effective cooling of the substrate by using the reaction chamber provided by another technical solution of the present invention, thereby improving the productivity of the semiconductor processing equipment. Thereby improving economic efficiency.
  • Figure 1a is a schematic view showing the structure of a conventional pre-cleaning chamber in a transfer state
  • Figure 1b is a partial schematic view of the prior pre-cleaning chamber in a process state
  • FIG. 2 is a perspective view showing the structure of a conventional thimble mechanism
  • 3a is a schematic structural view of a reaction chamber when loading and unloading a substrate according to an embodiment of the present invention
  • FIG. 3b is a partial schematic view of a reaction chamber according to an embodiment of the present invention.
  • Figure 4 is a schematic structural view of the support member of Figures 3a and 3b;
  • FIG. 5 is a top plan view of a susceptor in a reaction chamber according to an embodiment of the present invention.
  • Figure 6 is a partial enlarged view of the area I in Figure 3b;
  • FIG. 7 is a partial schematic view of a reaction chamber to which another support member is provided according to an embodiment of the present invention.
  • FIG. 3a is a schematic structural view of a reaction chamber according to an embodiment of the present invention when loading and unloading a substrate
  • FIG. 3b is a partial schematic view of a reaction chamber according to an embodiment of the present invention
  • FIG. 4 is a diagram of FIG. 3a and FIG. Schematic diagram of the support member.
  • the reaction chamber 20 provided in this embodiment includes a base 21 and a pressure ring 22 for carrying the substrate S.
  • the base 21 is provided with a back blowing pipe 211 communicating with a back air source (not shown), and the upper surface of the base 21 is provided with an annular sealing device, and the base 21 can be lifted and lowered.
  • the base 21 When the substrate S is unloaded, the base 21 is in the loading and unloading position shown in FIG. 3a. During the process, the base 21 is raised to the process position (as shown in FIG. 3b) and the pressure ring 22 is lifted up. At this time, the pressure ring 22 is laminated.
  • the annular sealing means In the edge region of the substrate S, the annular sealing means is in contact with the back surface of the substrate S such that the upper surface of the susceptor 21 inside the annular sealing device forms a sealed space with the back surface of the substrate S, and the back blowing gas supplied from the back blowing gas source passes through the back.
  • the blowing line 211 is delivered into the sealed space, wherein the back blowing gas includes an inert gas or a process gas to prevent the back blowing gas from leaking into the reaction chamber to affect the process.
  • the back blowing pipe 211 has a plurality of output ports 214 provided on the upper surface of the base 21, and each of the output ports 214 is disposed near the center of the base 21 at the base 21
  • the upper surface is provided with an annular groove 212 disposed along the circumferential direction thereof and the output
  • the port 214 has a corresponding strip-shaped recess 213, and the annular recess 212 is located inside the annular sealing device. Both ends of each strip-shaped recess 213 communicate with the annular recess 212 and the corresponding output port 214, respectively.
  • the back-blowing gas can be uniformly flowed on the back surface of the substrate S to a certain extent, so that the uniformity of the temperature of the substrate S can be improved, and the quality of the process can be improved.
  • the plurality of output ports 214 are spaced and uniformly disposed along the circumference of the susceptor 21, which can further achieve uniform flow of the back-blowing gas on the back surface of the substrate S, so that the uniformity of the temperature of the substrate S can be further improved.
  • the susceptor 21 has a cooling function, specifically, a cooling duct is provided in the susceptor 21, and the cooling medium flows through the cooling duct to cool the susceptor 21, and thus, the depth of the annular groove 212 and the strip groove 213 is set. Generally, it is small, and the heat exchange efficiency between the susceptor 21, the back gas, and the substrate S can be accelerated, thereby realizing rapid cooling of the substrate S.
  • the annular sealing means is provided as an annular corner 215 formed by cutting at an edge region of the upper surface of the base 21, and the upper surface of the base 21 is located inside and outside the annular corner 215 The portion is lower than the annular corner 215.
  • the annular sealing device is a "sealing knife edge”.
  • the annular groove 212 and the strip groove 213 are disposed on the upper surface of the base 21 inside the annular corner 215, and the annular groove 212 is disposed adjacent to the annular corner 215.
  • the use of the above-mentioned susceptor 21 having a sealing blade can largely prevent the back-blowing gas from leaking into the reaction chamber 20, which can not only prevent the back-blowing gas from entering the reaction chamber 20 but affecting the reaction chamber 20.
  • the pressure of the process generally milliTorr
  • the pressure of the back gas also allows the pressure of the back gas to reach a few Torr, so that there is a relatively large amount of back gas between the substrate S and the susceptor 21, thereby improving heat transfer efficiency.
  • the pressure ring 22 is overlapped on the support member 23, that is, the pressure ring 22 and the support member 23 are in a dynamic connection, not a fixed connection.
  • the base 21 is as shown in FIG. 3a. After the position shown rises to a position just in contact with the pressure ring 22, the drive base 21 is continuously raised until the pressure ring 22 is lifted, at which time the pressure ring 22 is separated from the support member 23, And the self-gravity of the pressure ring 22 is applied to the edge region of the substrate S, thereby pressing the substrate S to be fixed.
  • the top wall 25 of the reaction chamber 20 is a dome structure made of a non-metal material such as quartz or glass, and an alternating electric field generated by a radio frequency power source is coupled into the reaction chamber 20 via the top wall to realize a process gas.
  • an annular inner liner 26 having a cylindrical structure is sleeved inside the inner wall of the upper portion of the reaction chamber 20, and the outer side wall of the base 21 is provided with a matching inner ring 26 and can be formed therewith.
  • An annular outer liner 27 enclosing the reaction space.
  • the support member 23 includes a support post 231, a support ring 232, and a plurality of support rods 233.
  • the inner diameter of the support ring 232 is larger than the diameter of the base 21, so that the base 21 is lifted and lowered relative to the pressure ring 22 in the annular hole of the support ring 232; the plurality of support rods 233 are arranged at intervals along the circumferential direction of the support ring 232.
  • the ring 232 is configured to support the pressure ring 22.
  • the annular outer liner 27 is provided with a plurality of first through holes respectively corresponding to the support rods 233, and each support rod 233 passes through the corresponding first pass.
  • the support column 231 is used to support the support ring 232, Specifically, the lower end of the support post 231 is fixed to the bottom surface of the reaction chamber 20, and the upper end thereof is horizontally fixed to the support ring 232 by screws.
  • the plurality of support rods 233 are circumferentially spaced and uniformly disposed on the support ring 232 along the circumference of the support ring 232, which makes it possible to stably support the pressure ring 22, so that the stability of the process can be ensured.
  • the lower surface of the pressure ring 22 is provided with a plurality of blind holes 221, and each blind hole 221 is disposed at a position of the lower surface of the pressure ring 22 in contact with the support rod 233; each blind hole 221 is for receiving
  • the top end of the support rod 233 corresponding thereto is as shown in Fig. 3b. It can be understood that the top end of the support rod 233 is located in the blind hole 221 corresponding thereto when loading and unloading the substrate S.
  • the blind hole 221 can not only limit the support rod 233, thereby stably supporting the pressure ring 22; When the pressure ring 22 moves up and down, it plays a guiding role, thereby ensuring that the pressure ring 22 rises vertically drop.
  • the edge portion of the lower surface of the pressure ring 22 is provided with a convex portion 222, and the blind hole 221 is provided on the convex portion 222.
  • the lower end surface of the convex portion 222 covers the first through hole on the annular outer liner 27 to prevent the pollutants etched during the process from passing through the first pass. The holes leak into the chamber below the susceptor 21.
  • the protruding portion 222 may be not only an annular convex portion disposed circumferentially along the pressure ring 22, but also covers a plurality of first portions by the lower end surface of the annular convex portion when the pressure ring 22 is laminated on the edge region of the substrate S.
  • the through hole may further include a sub-protrusion corresponding to the first through hole, and when the pressing ring 22 is laminated on the edge region of the substrate S, the lower end surface of each sub-protrusion is used to cover the corresponding portion a through hole.
  • the reaction chamber 20 further includes a thimble device including a plurality of thimbles 24 for carrying the substrate S, the top end of the thimble 24 being the same as the transfer port 29 provided on the side wall of the pre-cleaning chamber (ie, the reaction chamber)
  • the height, the annular outer liner 27 is provided with a plurality of second through holes respectively corresponding to the thimbles 24, and when the substrate S is loaded and unloaded, the annular outer lining 27 descends with the pedestal 21, and each thimble 24 passes through the corresponding a second through hole, and the top end of the thimble 24 is higher than the upper surface of the base 21 and lower than the lower surface of the pressure ring 22, the thimble 24 and the second through hole are clearance-fitted such that each thimble 24 is in the second through hole
  • the inside can be raised and lowered with respect to the second through hole to realize the transfer of the substrate S between the ejector pin 24 and the susceptor 21.
  • a plurality of thimbles 24 are disposed on the support ring 232 along the circumferential spacing of the support ring 232, and the top end of the thimble 24 is located below the pressure ring 22. It can be understood that the thimble 24 and the pressure ring 22 share one support member, so that the support members of the plurality of ejector pins 24 can be omitted, thereby not only simplifying the structure but also reducing the cost. Further preferably, the plurality of ejector pins 24 are circumferentially spaced and uniformly disposed on the support ring 232 along the support ring 232, which makes it possible to stably support the substrate S, so that the falling of the sheet can be prevented.
  • the ejector pin 24 is used to carry the substrate S, the diameter of the circumference of the thimble 24 is smaller than the diameter of the substrate S, and the support rod 233 is used to support the pressure ring 22, and the outer diameter of the pressure ring 22 is not less than that of the substrate S.
  • the diameter therefore, the diameter of the circumference of the support rod 233 is larger than the diameter of the substrate S. Therefore, when the support ring 232 as shown in FIG. 4 is employed, a convex portion extending toward the center of the support ring 232 is provided on the inner side wall of the support ring 232, and the ejector pin 24 is provided at one end of the convex portion away from the support ring 232. So that the diameter of the circumference of the thimble 24 is smaller than the inner diameter of the support ring 232; the support rod 233 is disposed on the annulus of the support ring 232.
  • Loading process driving the base 21 to lower position by means of the lifting device, so that the upper surface of the base 21 and the annular surface of the lower surface of the pressure ring 22 are close to the annular hole thereof, and the stepped surface of the thimble 24 is located.
  • the robotic autoreceive film opening 29 carrying the substrate S is introduced into the reaction chamber 20, and the substrate S is transferred to the step surface of the thimble 24.
  • the base 21 is driven up by the lifting device, and the upper surface of the base 21 is first lifted by the substrate S during the ascending process, and then the upper surface of the substrate S and the upper surface of the pressure ring 22 are close to the ring hole thereof.
  • the annular regions are in contact, and then the susceptor 21 drives the substrate S and the pressure ring 22 to continue to rise until the process position.
  • a certain amount of process gas is introduced into the reaction chamber, and the pressure in the chamber is guaranteed to be milliTorr.
  • the back blow tube is passed.
  • the road 211 conveys the back-blowing gas between the susceptor 21 and the substrate S without causing the underweight substrate S to be blown or blown, and between the substrate S and the susceptor 21 by means of the sealing blade.
  • the sealing space is formed, not only the gas pressure of the backing gas can reach several Torr, but also the heat of the substrate S can be transmitted to the susceptor 21 in time and taken away, and the leakage of the back blowing gas can be prevented from affecting the process environment.
  • Unloading process first, the base 21 is lowered by means of the lifting device until the base 21 descends below the top end of the thimble 24, so that the substrate S is separated from the base 21 and located on the thimble 24; Next, the unloaded robot autorotation opening 29 enters the reaction chamber 20, and the substrate S on the ejector pin 24 is transferred out of the reaction chamber 20, thereby unloading the substrate S on the susceptor 20.
  • the support member 23 is of the structure shown in FIG. 4 in the present embodiment, it includes the support post 231, the support ring 232 and the plurality of support rods 233; however, the present invention is not limited thereto, In practical applications, the support member 23 can also adopt other structures as long as the support pressure ring 22 can be realized.
  • the pressure ring 22 is overlapped on the support member 23, specifically, the pressure ring 22 is overlapped on the support rod 233 to press the substrate S by the gravity of the pressure ring 22 by itself.
  • the pressure ring 22 can also be fixed to the support member 23, in particular, the pressure ring 22 is fixedly coupled to the support rod 233, in which case the pressure ring 22 can be in contact with the base 21 The relative movement is then continued to press the substrate S by the gravity of the pressure ring 22 and the downward pulling force of the support rod 233.
  • the support member 23 serves as a lining of the reaction chamber 20, which is disposed around the inner peripheral wall of the reaction chamber 20. And having an annular groove 234 with an opening facing upward and surrounding the inner peripheral wall of the reaction chamber 20; the outer diameter of the pressure ring 22 is larger than the inner diameter of the annular groove 234, and the pressure ring 22 overlaps the inner ring of the annular groove 234
  • the inner ring wall 235 refers to an annular wall forming an annular groove 235 near the center of the reaction chamber 20; and an elastic member 236 is disposed between the groove bottom of the annular groove 234 and the outer edge of the pressure ring 22, The elastic member 236 is stretched while the pressure ring 22 is laminated on the substrate S to apply a downward elastic force to the pressure ring 22.
  • the substrate S can be pressed by the gravity of the pressure ring 22 and the downward elastic force of
  • the lower surface of the pressure ring 22 is provided with an annular recess 223 which overlaps the inner ring wall 235 of the annular groove 234. It can be understood that the inner ring wall 235 of the annular groove 234 is restricted by the annular recess 223, so that the reliability of the support pressure ring 22 can be improved.
  • the susceptor 21 when the substrate S is loaded and unloaded, the susceptor 21 is away from the pressure ring 22 to perform the operation of loading and unloading the substrate S to the susceptor 21, thereby realizing the loading and unloading of the process.
  • the pressure ring 22 is laminated on the edge region of the substrate S to position the substrate S, and the annular sealing device is in contact with the back surface of the substrate S to make the upper surface of the base 21 of the annular sealing device and the base
  • the back surface of the sheet S forms a sealed space, so that not only the substrate S can be prevented from being blown or blown by the back blowing gas, but also the heat conduction effect between the substrate S and the susceptor 21 can be enhanced by increasing the back blowing gas. It is also possible to avoid back-breathing gas leakage and influence the process environment by means of an annular seal.
  • the reaction chamber 20 provided by the embodiment of the present invention can enhance the substrate S by increasing the back gas between the substrate S and the susceptor 21 during the process compared with the prior art reaction chamber.
  • the heat conduction with the susceptor 21 allows the substrate S to be cooled while the process is being performed, so that it is not necessary to periodically suspend the process and increase the cooling step during the process as in the prior art, thus implementing the present invention
  • the reaction chamber provided by the example can greatly shorten the process time, improve the production capacity of the semiconductor processing equipment, and thereby improve the economic efficiency under the premise of ensuring effective cooling of the substrate S.
  • the present invention also provides a semiconductor processing apparatus including a reaction chamber which can adopt the reaction chamber provided in the above embodiment, and the reaction chamber can be a pre-clean chamber.
  • the semiconductor processing apparatus may be a physical vapor deposition apparatus, a plasma etching apparatus, a chemical vapor deposition apparatus, or the like.
  • the semiconductor processing apparatus provided by the embodiment of the present invention can greatly shorten the process time and thereby improve the throughput of the semiconductor processing equipment by using the reaction chamber provided by the above embodiment of the present invention, under the premise of ensuring effective cooling of the substrate. Thereby improving economic efficiency.

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Abstract

一种反应腔室及半导体加工设备。在反应腔室（20）内设置有用于承载基片（S）的基座（21）以及压环（22）；基座（21）内设置有与背吹气源相连通的背吹管路（211）；基座（21）的上表面上设置有环形密封装置；当基座（21）带动基片（S）上升并将压环（22）顶起时，压环（22）叠压在基片（S）的边缘区域，环形密封装置与基片（S）的背面接触使得环形密封装置内侧的基座（21）上表面与基片（S）的背面形成密封空间，背吹气源提供的背吹气体经由背吹管路（211）输送至密封空间内。反应腔室（20）可以在保证对基片（S）有效冷却的前提下大大地降低工艺时间，从而可以提高半导体加工设备的产能，进而可以提高经济效益。

Description

反应腔室及半导体加工设备 技术领域
本发明属于微电子加工技术领域，具体涉及一种反应腔室及半导体加工设备。
背景技术
在半导体制备工艺中，特别是，集成电路(IC)制备工艺、硅通孔(TSV)工艺和封装(Packaging)工艺，在工艺之前需要先执行预清洗工艺，以去除基片表面的杂质，来保证后续沉积工艺的工艺质量，从而保证半导体器件的性能。预清洗工艺的基本原理为：一般采用电感耦合等离子体发生装置，利用射频电源产生的高压交变电场将腔室内的工艺气体激发形成高反应活性和/或高能量的等离子体，借助该等离子体与基片的表面发生化学反应和/或物理轰击作用，来实现去除基片表面的杂质。
图1a为现有的预清洗腔室处于传片状态的结构示意图；图1b为现有的预清洗腔室处于工艺状态的结构示意图。请一并参阅图1a和图1b，该预清洗腔室内设置有具有冷却功能的基座10和顶针机构。其中，基座10用于承载基片S，且其可在传片位置和工艺位置之间升降，传片位置和工艺位置分别指如图1a和图1b中基座10所在的位置，所谓传片位置是指基座10所在的对其装载基片S的位置；所谓工艺位置是指基座10所在的对其上的基片S进行预清洗工艺的位置。图2为现有的顶针机构的立体结构图，请参阅图2，该顶针机构包括用于承载基片S的多个顶针11，基座10上设置有与顶针11一一对应的通孔，每个顶针11能够贯穿与之对应的通孔，并且，在基座10位于传片位置 时，顶针11的顶端高于基座10的上表面，且与预清洗腔室侧壁上设置的传片口12同高度。该预清洗腔室的工艺过程具体为：首先，预清洗腔室处于如图1a所示的状态，承载有基片S的机械手经由传片口12向顶针11上装载基片S；接着，在基片S装载至顶针11的顶端之后，基座10朝向工艺位置上升，当其上升至可将顶针11上的基片S托起时，即实现基片S由基座10承载；基座10将基片S托起后，继续上升直至到达工艺位置；最后，在基座10位于工艺位置后，开始通入工艺气体和加载射频电源等，以进行预清洗工艺，直至工艺结束。
在实际应用中，由于基片S和基座10的接触面具有较低的平面度，使得二者之间无法充分接触，并且，预清洗工艺的环境压力很低，一般为毫托级，因此，基片S和基座10之间的气体量较少，这使得二者之间的热传递主要依靠热辐射和少量气体的热传导，从而造成基片S与基座10之间的热传递很低，因此，随着预清洗工艺的持续进行，基片S的温度会持续升高，在温度升高至一定程度时会造成基片S损坏。
为此，现有技术中通常采用以下方式：在预清洗工艺进行一段时间后暂停，开始执行冷却步骤，向预清洗腔室内充气，使腔室压力达到几十托，使得基片S和基座10之间的气体增多，从而加快二者之间的气体热传导，实现基片S快速降温；之后继续进行预清洗工艺，即，对预清洗腔室进行抽气，使腔室的压力达到毫托级，并进行预清洗工艺；如此在预清洗工艺过程中周期性地暂停预清洗工艺并增加冷却步骤，直至预清洗工艺完成。
然而，在实际应用中，在预清洗工艺过程中周期性地增加冷却步骤来避免基片的温度过高却不可避免地存在以下问题：由于增加了冷却步骤，使得预清洗工艺的整个工艺时间较长，这造成半导体加工设备的产能低，并直接导致经济效益低；但是，若过少地设置冷却步骤的加入次数，则基片的温度往往仍会较高，这仍将影响工艺结果，造 成产品良率低。
发明内容
本发明旨在至少解决现有技术中存在的技术问题之一，提出了一种反应腔室及半导体加工设备，其在工艺的同时可以实现基片的冷却，也就不需要在工艺时周期性地暂停工艺以增加冷却步骤，因而在保证对基片有效冷却的前提下可以大大地降低工艺时间，从而可以提高半导体加工设备的产能，进而可以提高经济效益。
为解决上述问题之一，本发明提供了一种反应腔室，在所述反应腔室内设置有用于承载基片的基座以及压环；所述基座内设置有与背吹气源相连通的背吹管路；所述基座的上表面上设置有环形密封装置；当所述基座带动基片上升并将所述压环顶起时，所述压环叠压在基片的边缘区域，所述环形密封装置与所述基片的背面接触使得所述环形密封装置内侧的基座上表面与基片的背面形成密封空间，所述背吹气源提供的背吹气体经由所述背吹管路输送至所述密封空间内。
优选地，所述背吹管路具有在所述基座的上表面上设置的多个输出口，且每个所述输出口靠近所述基座的中心位置设置；在所述基座的上表面上设置有沿其周向设置的环形凹槽以及与所述输出口一一对应的条形凹槽，所述环形凹槽位于所述环形密封装置的内侧，每个所述条形凹槽的两端分别与所述环形凹槽以及与之对应的所述输出口相连通。
优选地，所述环形密封装置为环形棱角，所述环形棱角通过在所述基座上表面的边缘区域进行切割形成，所述环形棱角内外侧的所述基座上表面均低于所述环形棱角。
优选地，所述反应腔室内还设置有用于支撑所述压环的支撑件，所述支撑件包括支撑柱、支撑环和多个支撑杆，其中，多个所述支撑 杆设置在所述支撑环上，且沿所述支撑环的周向间隔设置，用于支撑所述压环；所述支撑环的内径大于所述基座的直径，围绕所述基座外圆周设置的环形外衬上设置有多个分别与所述支撑杆一一对应的第一通孔，每个所述支撑杆穿过对应的第一通孔后与所述压环配合，且所述支撑杆与所述第一通孔为间隙配合；所述支撑柱用于支撑所述支撑环。
优选地，所述压环的下表面上设置有多个盲孔，且每个所述盲孔设置在所述压环下表面的与所述支撑杆相接触的位置处；每个所述盲孔用于容纳与之对应的所述支撑杆的顶端。
优选地，所述压环的下表面的边缘区域设置有凸部，所述盲孔设置在所述凸部上；当所述压环叠压在基片的边缘区域上时，所述凸部的下端面盖住所述第一通孔。
优选地，还包括多个用于承载基片的顶针；
所述环形外衬上设置有多个分别与所述顶针一一对应的第二通孔，在装卸载基片时，每个所述顶针穿过对应的第二通孔，且所述顶针的顶端高于所述基座的上表面低于所述压环的下表面，所述顶针与所述第二通孔为间隙配合。
优选地，所述多个顶针设置在所述支撑环上，且沿所述支撑环的周向间隔设置。
优选地，所述支撑件作为所述反应腔室的内衬，所述支撑件环绕所述反应腔室的内周壁设置，且所述支撑件具有开口朝上且环绕所述反应腔室的内周壁设置的环形沟槽；所述压环的外径大于所述环形沟槽的内径；所述压环搭接在所述环形沟槽的内环壁上；在所述环形沟槽的槽底和所述压环的外边缘之间还设置有弹性部，通过所述弹性部件在所述压环叠压在所述基片时受到拉伸来实现向所述压环施加向下的弹力。
作为另外一个技术方案，本发明还提供一种半导体加工设备，包括反应腔室，所述反应腔室采用上述提供反应腔室。
本发明具有以下有益效果：
本发明提供的反应腔室，在装卸载基片时使基座远离压环，以便于向基座装卸载基片；以及，在工艺时使压环叠压在基片的边缘区域，环形密封装置与基片的背面接触使得环形密封装置内侧的基座上表面与基片的背面形成密封空间，这不仅可以实现在基片不会被吹飞或吹歪的情况下借助背吹气体实现基片和基座之间的热传导，而且还可以实现借助环形密封装置避免背吹气体泄漏对工艺环境产生影响。因此，本发明提供的反应腔室与现有技术的反应腔室相比，在工艺时增加了基片与基座之间的背吹气体，背吹气体可以使得基片与基座之间进行热传导，即在工艺的同时就可以实现基片的冷却，也就不需要在工艺时周期性地暂停工艺以增加冷却步骤，因而可以在保证对基片有效冷却的前提下大大地降低工艺时间，从而可以提高半导体加工设备的产能，进而可以提高经济效益。
本发明提供的半导体加工设备，其采用本发明另一技术方案提供的反应腔室，可以实现在保证对基片有效冷却的前提下可以大大地降低工艺时间，从而可以提高半导体加工设备的产能，进而提高经济效益。
附图说明
图1a为现有的预清洗腔室处于传片状态的结构示意图；
图1b为现有的预清洗腔室处于工艺状态的局部示意图；
图2为现有的顶针机构的结构立体图；
图3a为本发明实施例提供的反应腔室在装卸载基片时的结构示意图；
图3b为本发明实施例提供的反应腔室在工艺时的局部示意图；
图4为图3a和图3b中的支撑件的结构示意图；
图5为本发明实施例提供的反应腔室中的基座的俯视图；以及
图6为图3b中的区域I的局部放大图；
图7为本发明实施例提供的应用另一种支撑件的反应腔室的局部示意图。
具体实施方式
为使本领域的技术人员更好地理解本发明的技术方案，下面结合附图来对本发明提供的反应腔室及半导体加工设备进行详细描述。
图3a为本发明实施例提供的反应腔室在装卸载基片时的结构示意图；图3b为本发明实施例提供的反应腔室在工艺时的局部示意图；图4为图3a和图3b中的支撑件的结构示意图。请一并参阅图3a、图3b和图4，本实施例提供的反应腔室20包括用于承载基片S的基座21和压环22。其中，基座21内设置有与背吹气源(图中未示出)相连通的背吹管路211，并且，基座21的上表面设置有环形密封装置，基座21可升降，在装卸载基片S时基座21处于图3a所示的装卸位置，在工艺时基座21上升至工艺位置(如图3b所示)并将压环22顶起，此时，压环22叠压在基片S的边缘区域，环形密封装置与基片S的背面接触使得环形密封装置内侧的基座21上表面与基片S的背面形成密封空间，背吹气源提供的背吹气体经由背吹管路211输送至密封空间内，其中，背吹气体包括惰性气体或工艺气体，以防止背吹气体泄露至反应腔室而对工艺产生影响。
如图5所示，优选地，背吹管路211具有在基座21的上表面上设置的多个输出口214，且每个输出口214靠近基座21的中心位置设置，在基座21的上表面上设置有沿其周向设置的环形凹槽212以及与输出 口214一一对应的条形凹槽213，环形凹槽212位于环形密封装置的内侧，每个条形凹槽213的两端分别与环形凹槽212以及与之对应的输出口214相连通。在此情况下，可在一定程度上实现背吹气体在基片S的背面均匀流动，从而可以提高基片S温度的均匀性，提高工艺质量。进一步优选地，多个输出口214沿所述基座21的周向间隔且均匀设置，这可以进一步实现背吹气体在基片S背面均匀流动，从而可以进一步提高基片S温度的均匀性。可以理解，由于基座21具有冷却功能，具体地，基座21内设置有冷却管道，冷却媒介经由冷却管道流动而冷却基座21，因此，设置环形凹槽212和条形凹槽213的深度一般较小，可以加快基座21、背吹气体和基片S之间的热交换效率，从而实现基片S快速地冷却。
如图6所示，另外优选地，环形密封装置被设置为环形棱角215，环形棱角215通过在基座21上表面的边缘区域进行切割形成，基座21上表面上的处于环形棱角215内外侧的部分均低于环形棱角215，可以说，环形密封装置为“密封刀口”。具体地，环形凹槽212以及与条形凹槽213设置在环形棱角215内侧的基座21上表面上，并且，环形凹槽212靠近环形棱角215设置。可以理解，采用上述具有密封刀口的基座21，可以在很大程度上避免背吹气体泄露至反应腔室20内，这不仅可以避免背吹气体进入反应腔室20而影响反应腔室20进行工艺的压力(一般为毫托级)，而且还可以使背吹气体的压力能达到几托，使基片S和基座21之间具有相对较多的背吹气体，从而提高热传导效率。
在本实施例中，压环22搭接在支撑件23上，也就是说，压环22与支撑件23之间为动连接，并非固定连接，在这种情况下，基座21自如图3a所示的位置上升至与压环22刚接触的位置之后，继续驱动基座21上升直至将压环22托起，此时，压环22与支撑件23分离， 且压环22的自身重力施加在基片S的边缘区域，以此压住基片S使其固定。
另外，反应腔室20的顶壁25为穹顶结构，其采用诸如石英或玻璃等的非金属材料制成，射频电源产生的交变电场经由该顶壁耦合至反应腔室20内实现将工艺气体激发形成等离子体；在反应腔室20靠上位置的内壁内侧套置有筒状结构的环形内衬26，在基座21的外侧壁上设置有与环形内衬26匹配且能与之共同形成封闭反应空间的环形外衬27。
如图4所示，支撑件23包括支撑柱231、支撑环232和多个支撑杆233。其中，支撑环232的内径大于基座21的直径，以实现基座21在支撑环232的环孔内与压环22相对升降；多个支撑杆233沿支撑环232的周向间隔设置在支撑环232上，用于支撑压环22，具体的，在环形外衬27上设置有多个分别与支撑杆233一一对应的第一通孔，每个支撑杆233穿过对应的第一通孔后与压环22配合，且支撑杆233与第一通孔为间隙配合，使得支撑杆233在第一通孔内可相对于第一通孔升降；支撑柱231用于支撑支撑环232，具体地，支撑柱231的下端固定在反应腔室20的底面上，且其上端通过螺钉水平固定于支撑环232。优选地，多个支撑杆233在支撑环232上沿支撑环232的周向间隔且均匀设置，这可以实现稳定地支撑压环22，从而可以保证工艺的稳定性。
优选地，压环22的下表面上设置有多个盲孔221，且每个盲孔221设置在压环22下表面的与支撑杆233相接触的位置处；每个盲孔221用于容纳与之对应的支撑杆233的顶端，如图3b所示。可以理解，在装卸载基片S时支撑杆233的顶端位于与之对应的盲孔221内，盲孔221不仅可以实现对支撑杆233限位，从而实现稳定地支撑压环22；而且还可以在压环22升降时起到导向作用，从而保证压环22垂直升 降。
另外，在本实施例中，压环22的下表面的边缘区域设置有凸部222，盲孔221设置在凸部222上。当压环22叠压在基片S的边缘区域上时，凸部222的下端面盖住环形外衬27上的第一通孔，以防止工艺时刻蚀出的污染物透过该第一通孔漏到基座21下方的腔室中。上述凸出部222不仅可以为沿压环22周向设置的环形凸部，在压环22叠压在基片S的边缘区域上时，借助环形凸部的下端面同时盖住多个第一通孔；还可以包括与第一通孔一一对应的子凸部，在压环22叠压在基片S的边缘区域上时，借助每个子凸部的下端面盖住与之对应的第一通孔。
反应腔室20内还包括顶针装置，顶针装置包括多个用于承载基片S的顶针24，顶针24的顶端与预清洗腔室(即，反应腔室)侧壁上设置的传片口29同高度，环形外衬27上设置有多个分别与顶针24一一对应的第二通孔，在装卸载基片S时，环形外衬27随着基座21下降，每个顶针24穿过对应的第二通孔，且顶针24的顶端高于基座21的上表面且低于压环22的下表面，顶针24与第二通孔为间隙配合，使得每个顶针24在第二通孔内可相对于第二通孔升降，用以实现基片S在顶针24和基座21之间传输。优选地，每个顶针24的顶端设置有台阶，下台阶面用于承载基片S，上下台阶面之间的竖直部分还可以对基片S进行限位，防止基片S在水平方向上偏移。
优选地，多个顶针24沿支撑环232的周向间隔设置在支撑环232上，并且，顶针24的顶端位于压环22的下方。可以理解，顶针24和压环22共用一个支撑件，因此可以省去多个顶针24的支撑件，从而不仅可以简化结构，而且还可以降低成本。进一步优选地，多个顶针24在支撑环232上沿支撑环232的周向间隔且均匀设置，这可以实现稳定地支撑基片S，从而可以防止掉片。
另外，由于顶针24用于承载基片S，因此，顶针24所在圆周的直径小于基片S的直径，而支撑杆233用于支撑压环22，压环22的外径不小于基片S的直径，因此，支撑杆233所在圆周的直径大于基片S的直径。因此，在采用如图4所示的支撑环232时，在支撑环232的内侧壁上设置有向支撑环232的圆心方向延伸的凸部，顶针24设置在凸部上远离支撑环232的一端，以使顶针24所在圆周的直径小于支撑环232的内径；支撑杆233设置在支撑环232的环面上。
下面结合图3a详细描述本实施例提供的反应腔室的整个工作过程。装载过程：借助升降装置驱动基座21下降至低位，使基座21的上表面与压环22下表面的靠近其环孔的环形区域之间具有一定的竖直距离，顶针24的台阶面位于基座21和压环之间，且顶针24的顶端对应传片口29，承载有基片S的机械手自传片口29传入反应腔室20内，并将基片S传输至顶针24的台阶面上。
工艺前：借助升降装置驱动基座21上升，在上升的过程中基座21的上表面先托起基片S，接着基片S的上表面与压环22的上表面的靠近其环孔的环形区域相接触，接着基座21带动基片S和压环22继续上升直至工艺位置。
工艺时：向反应腔室内通入一定量的工艺气体，且保证腔室内的压力为毫托级，此时，由于压环22的重量全部作用于基片S的边缘区域，因此，通过背吹管路211向基座21和基片S之间输送背吹气体，不会造成重量过轻的基片S被吹飞或者吹歪，并且，借助密封刀口可在基片S和基座21之间形成密封空间，不仅背吹气体的气体压力可以到达几托，能够将基片S的热量及时传导至基座21并被带走，而且还可以防止背吹气体的泄漏对工艺环境产生影响。
卸载过程：首先，借助升降装置驱动基座21下降，直至基座21下降至顶针24顶端的下方，使得基片S脱离基座21并位于顶针24上； 接着，空载的机械手自传片口29进入反应腔室20，将顶针24上的基片S传出反应腔室20，从而实现卸载基座20上的基片S。
需要说明的是，尽管在本实施例中支撑件23为如图4所示的结构，其包括支撑柱231、支撑环232和多个支撑杆233；但是，本发明并不局限于此，在实际应用中，支撑件23还可以采用其他结构，只要能够实现支撑压环22即可。
还需要说明的是，在本实施例中，压环22搭接在支撑件23上，具体地，压环22搭接在支撑杆233上，以借助压环22的自身重力压住基片S；但是，在实际应用中，压环22还可以固定在支撑件23上，具体地，压环22与支撑杆233固定连接，在这种情况下，可以在压环22与基座21相接触之后再继续相对运动，以通过压环22的重力以及支撑杆233向下的拉力来压住基片S。
优选地，为防止采用这种硬连接造成基片S受到压力过大而损坏，如图7所示，支撑件23作为反应腔室20的内衬，其环绕反应腔室20的内周壁设置，且其上具有开口朝上且环绕反应腔室20的内周壁设置的环形沟槽234；压环22的外径大于环形沟槽234的内径，压环22搭接在环形沟槽234的内环壁235上，内环壁235是指形成环形沟槽235的靠近反应腔室20中心的环形壁；在环形沟槽234的槽底和压环22的外边缘之间还设置有弹性部件236，弹性部件236在压环22叠压在基片S时受到拉伸而向压环22施加向下的弹力。在上述种情况下，可以通过压环22的重力和弹性部件236向下的弹力来压住基片S。
优选地，压环22的下表面上设置有环形凹部223，环形凹部223搭接在环形沟槽234的内环壁235上。可以理解，借助环形凹部223而实现对环形沟槽234的内环壁235的限位，从而可以提高支撑压环22的可靠性。
此外，还需要说明的是，通过使顶针24和基座21二者做相对升 降运动，而在顶针24和基座21之间传输基片S。
由上可知，本发明实施例提供的反应腔室，在装卸载基片S时，基座21远离压环22，以对基座21进行装卸载基片S的操作，从而实现工艺的装卸载需求；在工艺时，压环22叠压在基片S的边缘区域以对基片S定位，环形密封装置与基片S的背面接触而使环形密封装置内侧的基座21的上表面与基片S的背面形成密封空间，这样，不仅可以保证基片S不会被背吹气体吹飞或吹歪，而且可以通过增加背吹气体来增强基片S和基座21之间的热传导效应，并且还可以借助环形密封装置来避免背吹气体泄漏并对工艺环境产生影响。由此可见，本发明实施例提供的反应腔室20与现有技术的反应腔室相比，在工艺时可以通过增加基片S与基座21之间的背吹气体，来增强基片S与基座21之间的热传导，以便在进行工艺的同时就可以对基片S进行冷却，因此不需要像现有技术那样在工艺时周期性地暂停工艺并增加冷却步骤，因此，本发明实施例提供的反应腔室可以在保证对基片S进行有效冷却的前提下，大大缩短工艺时间，提高半导体加工设备的产能，进而提高经济效益。
作为另外一个技术方案，本发明还提供一种半导体加工设备，其包括反应腔室，该反应腔室可以采用上述实施例提供的反应腔室，而且，该反应腔室可以为预清洗腔室。
具体地，半导体加工设备可以为物理气相沉积设备、等离子体刻蚀设备和化学气相沉积设备等。
本发明实施例提供的半导体加工设备，其通过采用本发明上述实施例提供的反应腔室，可以在保证对基片进行有效冷却的前提下，大大缩短工艺时间，从而提高半导体加工设备的产能，进而提高经济效益。
可以理解的是，以上实施方式仅仅是为了说明本发明的原理而采 用的示例性实施方式，然而本发明并不局限于此。对于本领域内的普通技术人员而言，在不脱离本发明的精神和实质的情况下，可以做出各种变型和改进，这些变型和改进也视为本发明的保护范围。

Claims (10)

  1. 一种反应腔室，其特征在于，在所述反应腔室内设置有用于承载基片的基座以及压环；
    所述基座内设置有与背吹气源相连通的背吹管路；
    所述基座的上表面设置有环形密封装置；
    当所述基座带动基片上升并将所述压环顶起时，所述压环叠压在基片的边缘区域，所述环形密封装置与所述基片的背面接触使得所述环形密封装置内侧的基座上表面与基片的背面形成密封空间，所述背吹气源提供的背吹气体经由所述背吹管路而被输送至所述密封空间内。
  2. 根据权利要求1所述的反应腔室，其特征在于，所述背吹管路具有设置在所述基座的上表面上的多个输出口，且每个所述输出口靠近所述基座的中心位置；
    在所述基座的上表面上沿其周向设置有环形凹槽以及与所述输出口一一对应的条形凹槽，所述环形凹槽位于所述环形密封装置的内侧，每个所述条形凹槽的两端分别与所述环形凹槽以及与之对应的所述输出口相连通。
  3. 根据权利要求1所述的反应腔室，其特征在于，所述环形密封装置为环形棱角，所述环形棱角通过在所述基座上表面的边缘区域进行切割形成，所述基座上表面上的处于所述环形棱角内外侧的部分均低于所述环形棱角。
  4. 根据权利要求1所述的反应腔室，其特征在于，所述反应腔室内还设置有用于支撑所述压环的支撑件，所述支撑件包括支撑柱、支撑环和多 个支撑杆，其中，
    多个所述支撑杆沿所述支撑环的周向间隔设置在所述支撑环上，用于支撑所述压环；
    所述支撑环的内径大于所述基座的直径，围绕所述基座的外周壁设置的环形外衬上设置有多个分别与所述支撑杆一一对应的第一通孔，每个所述支撑杆穿过对应的第一通孔并与所述压环配合，且所述支撑杆与所述第一通孔为间隙配合；
    所述支撑柱用于支撑所述支撑环。
  5. 根据权利要求4所述的反应腔室，其特征在于，所述压环的下表面上设置有多个盲孔，且每个所述盲孔设置在所述压环下表面的与所述支撑杆相接触的位置处；
    每个所述盲孔用于容纳与之对应的所述支撑杆的顶端。
  6. 根据权利要求5所述的反应腔室，其特征在于，所述压环的下表面的边缘区域设置有凸部，所述盲孔设置在所述凸部上；
    当所述压环叠压在基片的边缘区域上时，所述凸部的下端面盖住所述第一通孔。
  7. 根据权利要求4所述的反应腔室，其特征在于，还包括多个用于承载基片的顶针；
    所述环形外衬上设置有多个分别与所述顶针一一对应的第二通孔，在装卸载基片时，每个所述顶针穿过对应的第二通孔，且所述顶针的顶端高于所述基座的上表面且低于所述压环的下表面，所述顶针与所述第二通孔为间隙配合。
  8. 根据权利要求7所述的反应腔室，其特征在于，所述多个顶针沿所述支撑环的周向间隔设置在所述支撑环上。
  9. 根据权利要求1所述的反应腔室，其特征在于，所述支撑件作为所述反应腔室的内衬，所述支撑件环绕所述反应腔室的内周壁设置，且所述支撑件具有开口朝上且环绕所述反应腔室的内周壁设置的环形沟槽；
    所述压环的外径大于所述环形沟槽的内径；
    所述压环搭接在所述环形沟槽的内环壁上；
    在所述环形沟槽的槽底和所述压环的外边缘之间还设置有弹性部，所述弹性部件在所述压环叠压在所述基片上时受到拉伸而向所述压环施加向下的弹力。
  10. 一种半导体加工设备，包括反应腔室，其特征在于，所述反应腔室采用权利要求1-9任意一项所述的反应腔室。
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CN102468205A (zh) * 2010-11-18 2012-05-23 北京北方微电子基地设备工艺研究中心有限责任公司 托盘及具有它的晶片处理设备
CN103094037A (zh) * 2011-11-08 2013-05-08 北京北方微电子基地设备工艺研究中心有限责任公司 一种夹持装置及应用该夹持装置的等离子体加工设备
CN103590114A (zh) * 2012-08-17 2014-02-19 北京北方微电子基地设备工艺研究中心有限责任公司 一种托盘紧固装置及等离子体加工设备

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CN112349626A (zh) * 2020-09-28 2021-02-09 芯米(厦门)半导体设备有限公司 一种晶圆烘烤装置
CN112331609A (zh) * 2020-10-26 2021-02-05 北京北方华创微电子装备有限公司 半导体工艺设备中的加热基座及半导体工艺设备
CN112331609B (zh) * 2020-10-26 2023-12-22 北京北方华创微电子装备有限公司 半导体工艺设备中的加热基座及半导体工艺设备
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CN114141691B (zh) * 2021-12-14 2022-06-17 北京北方华创微电子装备有限公司 半导体工艺设备
CN118231329A (zh) * 2024-05-24 2024-06-21 上海陛通半导体能源科技股份有限公司 基于气动方式升降晶圆的半导体设备

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