WO2016179926A1 - Fast and high-spatial resolution wave aberration in-situ detection apparatus and method for lithography machine - Google Patents

Fast and high-spatial resolution wave aberration in-situ detection apparatus and method for lithography machine Download PDF

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WO2016179926A1
WO2016179926A1 PCT/CN2015/088310 CN2015088310W WO2016179926A1 WO 2016179926 A1 WO2016179926 A1 WO 2016179926A1 CN 2015088310 W CN2015088310 W CN 2015088310W WO 2016179926 A1 WO2016179926 A1 WO 2016179926A1
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grating
wave aberration
sensor
lithography machine
spatial resolution
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PCT/CN2015/088310
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French (fr)
Chinese (zh)
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李�杰
唐锋
王向朝
吴飞斌
张国先
郭福东
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中国科学院上海光学精密机械研究所
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Priority to JP2017556235A priority Critical patent/JP6438157B2/en
Publication of WO2016179926A1 publication Critical patent/WO2016179926A1/en

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
    • G01M11/00—Testing of optical apparatus; Testing structures by optical methods not otherwise provided for
    • G01M11/02—Testing optical properties
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor

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  • the invention relates to a lithography machine, in particular to a lithography machine for in-situ rapid high spatial resolution wave aberration detection apparatus and method.
  • the lithography machine is one of the core devices for the manufacture of very large scale integrated circuits.
  • the projection objective is one of the most important subsystems of the lithography machine.
  • the wave aberration of the projection objective affects the imaging quality of the lithography machine, resulting in reduced imaging contrast and reduced process window.
  • the wave aberration tolerance of the projection objective of the lithography machine becomes more and more severe, and the requirements for the detection accuracy of wave aberration are also higher and higher.
  • Van De Kerkhof et al. proposed a wavefront aberration detecting device based on the Langsch shear interference principle integrated on a lithography mask platform and a silicon wafer platform (refer to the prior art [1], Van De Kerkhof, M. , et al., Full optical column characterization of DUV lithographic projection tools.
  • Optical Microlithography Xvii, Pts 1-3,2004.5377: p.1960-1970 realizing in-situ detection of projection lens aberration of the lithography machine.
  • the spatial resolution of the device for in-situ detection is determined by the number of detector pixels; its wave aberration interferogram detector is mounted on the workpiece table of the lithography machine, and the heat generated by the wave aberration interferogram detector will be given
  • the lithography machine workpiece table brings a large thermal load and affects the long-term stability of the workpiece table.
  • the more the number of detector pixels the longer the detection time and calculation time, which affects the detection speed.
  • the projection lens aberration of the lithography machine needs to detect 64 Zernike coefficients, that is, the detection spatial resolution requirement is improved; the detection speed requirement is further improved to realize the thermal aberration control.
  • the thermal load control and detection speed of the workpiece stage can be considered, and the requirements of the in-situ wave aberration detection of the high-end lithography machine can be satisfied.
  • the object of the present invention is to provide a device and method for in-situ rapid high spatial resolution wave aberration detection of a lithography machine, which can detect the wave aberration of the projection objective of the lithography machine in real time and improve the detection resolution.
  • An in-situ fast high spatial resolution wave aberration detecting device for a lithography machine comprising a light source for generating a laser beam, an illumination system, a surface grating plate, a mask table capable of carrying a surface grating plate and having precise positioning capability a lithography machine projection objective lens, a wave aberration sensor, a workpiece stage and a computer capable of carrying a wave aberration sensor and having XYZ three-dimensional scanning capability and precise positioning capability;
  • the illumination system, the object grating plate, the lithography projection objective lens and the wave aberration sensor are sequentially arranged along the beam propagation direction;
  • the object grating plate is placed on a mask table, the wave aberration sensor is placed on the workpiece table, and the wave aberration sensor is connected to the computer;
  • the object grating plate is composed of two object gratings with a period of P o and a duty ratio of 50%, and the two object gratings are respectively the first grating of the grating line along the y direction and the grating line along the x direction.
  • the wave aberration sensor includes an image area grating, a small hole array and a two-dimensional photoelectric sensor which are sequentially placed along a beam propagation direction;
  • the period P o of the first grating and the second grating and the period P i of the image plane grating satisfy the following relationship;
  • M is the imaging magnification of the projection objective of the lithography machine.
  • the first grating and the second grating are phase gratings or amplitude gratings or a combination of amplitude and phase, and other types of one-dimensional diffraction gratings;
  • the image plane grating is a two-dimensional transmission grating such as a checkerboard grating with a duty ratio of 50%;
  • the image plane grating is a phase grating or an amplitude grating or a combination of amplitude and phase, and other types of diffraction gratings;
  • the period of the aperture array is equal to the pixel period of the photoelectric two-dimensional sensor, and the aperture position corresponds to the pixel position of the photoelectric two-dimensional sensor, and the aperture diameter is 1/N of the pixel size of the photoelectric two-dimensional sensor, and N is sampling. frequency;
  • the mask table is a displacement stage for moving the object grating plate into the object optical path of the projection objective of the lithography machine;
  • the workpiece stage is a displacement stage for moving the wavefront aberration sensor into an image side optical path of a projection objective of the lithography machine and driving the wave aberration sensor to move;
  • the two-dimensional photoelectric sensor is a camera, a CCD, a CMOS image sensor, a PEEM, or a two-dimensional photodetector array, and the detection surface receives a shear interference fringe generated by the image plane grating and sampled by the aperture array;
  • the computer is used to control the wave aberration detection process, store measurement data, and process and analyze the interference map.
  • a method for detecting in-situ wavefront aberration of an in-situ fast high spatial resolution wave aberration detecting device of a lithography machine comprising the following steps,
  • the workpiece table is moved in the y direction for multiple measurements. After each movement, the wavefront aberration sensor acquires a shearing interferogram, and the phase information is calculated from the acquired interferogram;
  • the present invention has the following advantages:
  • the spatial resolution of the real-time in-situ detection is increased by N 2 times.
  • Photoelectric two-dimensional sensors with low pixel counts can be used to realize wave aberration detection, reduce work heat generation and improve detection speed.
  • Figure 1 corresponds to the detection error of the apertureless array.
  • Figure 2 is equivalent to the detection error of the aperture array.
  • FIG. 3 is a structural diagram of an in-situ fast high spatial resolution wave aberration detecting device of the lithography machine of the present invention.
  • Figure 4 illustrates a surface grating plate in accordance with the present invention.
  • Figure 5 is a schematic view showing the structure of a wave aberration sensor of the present invention.
  • FIG. 3 is a schematic structural view of a detection system employed in the present invention.
  • a light source for generating a laser beam an illumination system 2, a surface grating plate 3, a mask table 4 for carrying the surface grating plate 3 and having precise positioning capability, and a photolithography for imaging the object surface grating onto the silicon wafer Projection objective lens 5, wave aberration sensor 6, workpiece stage 7 capable of carrying wave aberration sensor 6 and having XYZ three-dimensional scanning capability and precise positioning capability, and data processing computer 8 connected to wave aberration sensor 6; wavelength of light source 1 193nm, the object grating is a one-dimensional amplitude grating with a period of 41.52 ⁇ m, the numerical aperture of the projection objective 5 of the lithography machine is 0.93, the imaging magnification of the projection objective 5 of the lithography machine is 1/4, and the image grating is two-dimensional.
  • the checkerboard grating has a period of 10.38 ⁇ m;
  • the wave aberration sensor 6 includes an image plane grating 601, an aperture array 602 and a two-dimensional photoelectric sensor 603 which are sequentially placed in the beam propagation direction;
  • the two-dimensional photoelectric sensor 603 uses a CMOS camera with a pixel size of 7.4 ⁇ m. ⁇ 7.4 ⁇ m, the number of pixels is 640 ⁇ 480;
  • the object surface grating plate 3 is composed of two object gratings with a period of P o and a duty ratio of 50%, and the two object plane gratings are the first grating 301 and the grating line along the y direction of the grating line respectively.
  • the first grating 301 and the second grating 302 are other types of one-dimensional diffraction gratings such as a phase grating or an amplitude grating or an amplitude phase combination.
  • the wave aberration sensor 6 includes an image plane grating plate 601, an aperture array 602, and a two-dimensional photoelectric sensor 603 which are sequentially placed in the beam propagation direction.
  • the period P o of the object surface grating and the period P i of the image plane grating 601 satisfy the following relationship;
  • M is an imaging magnification of the projection objective 5 of the lithography machine
  • the image plane grating 601 is a two-dimensional transmission grating such as a checkerboard grating with a duty ratio of 50%;
  • the image plane grating 601 is a phase grating or an amplitude grating or a combination of amplitude and phase, and other types of diffraction gratings;
  • the period of the aperture array 602 is equal to the pixel period of the photoelectric two-dimensional sensor 603, and the aperture position is in one-to-one correspondence with the pixel position of the photoelectric two-dimensional sensor, and the aperture diameter is 1/N of the pixel size of the photoelectric two-dimensional sensor 603.
  • N is the sampling frequency
  • the mask table 4 is a displacement stage for moving the object grating plate 3 into the object optical path of the projection objective 5 of the lithography machine;
  • the workpiece stage 7 is a displacement stage for moving the wavefront aberration sensor 6 into the image side optical path of the projector objective lens 5 and driving the wave aberration sensor 6 to move;
  • the two-dimensional photosensor 603 is a camera, CCD, CMOS image sensor, PEEM, or two-dimensional photodetector array, and the detection surface receives the shear interference generated by the image plane grating 601 and sampled by the aperture array 602. stripe;
  • the computer 8 is used to control the wave aberration detection process, store measurement data, and process and analyze the interference map.
  • a method for detecting in-situ wavefront aberration of an in-situ fast high spatial resolution wave aberration detecting device of a lithography machine comprising the following steps,
  • the workpiece table 7 is moved in the x direction to perform multiple measurements. After each movement, the wave aberration sensor 6 acquires a shearing interferogram, and the phase information is calculated from the acquired interferogram. ;
  • the workpiece table 7 is moved in the y direction for multiple measurements. After each movement, the wave aberration sensor 6 acquires a shearing interferogram, and the phase information is calculated from the acquired interferogram. ;
  • the invention uses the aperture array to sample the wave aberration, and improves the spatial resolution of the real-time in-situ detection by N 2 times.
  • the simulation was performed using a 256 pixel ⁇ 256 pixel wave aberration (root mean square value of 0.0995 ⁇ ).
  • the average value of each of the four pixels in the differential wavefront is equivalent to the absence of the aperture array, and a differential wavefront of 64 pixels ⁇ 64 pixels is obtained.
  • the differential wavefront is reconstructed by the prior art, and the error is shown in FIG.
  • the root mean square error is 0.0141 ⁇ ; the differential wavefront of the wave aberration is sampled, and one pixel is selected every 4 pixels, which is equivalent to adding a small hole array on the detector to obtain a differential wavefront of 64 pixels ⁇ 64 pixels.
  • the differential wavefront is reconstructed by the prior art, and the error is shown in Fig. 2, and the root mean square value error is 0.0001 ⁇ .
  • the apparatus and method of the present invention increase the resolution of projection object wave aberration detection by 16 times. Or under the same conditions, the number of pixels can be reduced to 1/16, that is, the detection speed is increased by 16 times.

Abstract

A fast and high-spatial resolution wave aberration in-situ detection apparatus and method for a lithography machine. The detection apparatus comprises a light source (1) for generating a laser beam; and an illumination system (2), an object plane grating plate (3), a mask table (4) that can bear the object plane grating plate (3) and has a precise location capacity, a lithography machine projection objective (5), a wave aberration sensor (6) and a working table (7) that can bear the wave aberration sensor (6) and has the capacity of XYZ three-dimensional scanning and precise location capacity are sequentially arranged along a beam propagation direction. Using such detection apparatus to detect a wave aberration of a lithography machine projection objective in situ and in real time increases the speed and spatial resolution of wave aberration detection.

Description

光刻机原位快速高空间分辨率波像差检测装置及方法In-situ rapid high spatial resolution wave aberration detecting device and method for lithography machine 技术领域Technical field
本发明涉及光刻机，特别是一种光刻机原位快速高空间分辨率波像差检测装置及方法。The invention relates to a lithography machine, in particular to a lithography machine for in-situ rapid high spatial resolution wave aberration detection apparatus and method.
背景技术Background technique
光刻机是极大规模集成电路制造的核心设备之一。投影物镜是光刻机最重要的分系统之一。投影物镜的波像差影响光刻机的成像质量，造成成像对比度降低，工艺窗口缩小。随着光刻技术从干式发展至浸没式，光刻机投影物镜的波像差容限变得越来越严苛，对波像差检测精度的要求也越来越高。The lithography machine is one of the core devices for the manufacture of very large scale integrated circuits. The projection objective is one of the most important subsystems of the lithography machine. The wave aberration of the projection objective affects the imaging quality of the lithography machine, resulting in reduced imaging contrast and reduced process window. As the lithography technology develops from dry to immersed, the wave aberration tolerance of the projection objective of the lithography machine becomes more and more severe, and the requirements for the detection accuracy of wave aberration are also higher and higher.
Van De Kerkhof等人提出一种通过在光刻机掩模平台和硅片平台上集成基于朗奇剪切干涉原理的波像差检测装置(参考在先技术[1]，Van De Kerkhof,M.,et al.,Full optical column characterization of DUV lithographic projection tools.Optical Microlithography Xvii,Pts 1-3,2004.5377:p.1960-1970)，实现了光刻机投影物镜波像差原位检测。该装置进行原位检测的空间分辨率由探测器像素个数决定；其波像差干涉图探测器安装在光刻机的工件台上，波像差干涉图探测器工作时产生的热量将给光刻机工件台带来较大的热载荷，影响工件台的长期稳定性。探测器像素个数越多，检测空间分辨率越高，同时产生的热量也越大。这形成了一对矛盾。并且，探测器像素个数越多，探测时间和计算时间也越长，影响检测速度。而光刻节点发展至1X纳米以下时，光刻机投影物镜波像差需要检测至64项Zernike系数，即检测空间分辨率要求提高；检测速度要求也进一步提高，以实现热像差控制。Van De Kerkhof et al. proposed a wavefront aberration detecting device based on the Langsch shear interference principle integrated on a lithography mask platform and a silicon wafer platform (refer to the prior art [1], Van De Kerkhof, M. , et al., Full optical column characterization of DUV lithographic projection tools. Optical Microlithography Xvii, Pts 1-3,2004.5377: p.1960-1970), realizing in-situ detection of projection lens aberration of the lithography machine. The spatial resolution of the device for in-situ detection is determined by the number of detector pixels; its wave aberration interferogram detector is mounted on the workpiece table of the lithography machine, and the heat generated by the wave aberration interferogram detector will be given The lithography machine workpiece table brings a large thermal load and affects the long-term stability of the workpiece table. The more the number of detector pixels, the higher the spatial resolution of the detection and the greater the amount of heat generated. This formed a contradiction. Moreover, the more the number of detector pixels, the longer the detection time and calculation time, which affects the detection speed. When the lithography node develops below 1X nanometer, the projection lens aberration of the lithography machine needs to detect 64 Zernike coefficients, that is, the detection spatial resolution requirement is improved; the detection speed requirement is further improved to realize the thermal aberration control.
如果能采用较少的干涉图探测器像素个数，实现高空间分辨率波像差检测，则能兼顾工件台热载荷控制以及检测速度，满足高端光刻机原位波像差检测的要求。If the number of pixels of the interferogram detector can be used to achieve high spatial resolution wave aberration detection, the thermal load control and detection speed of the workpiece stage can be considered, and the requirements of the in-situ wave aberration detection of the high-end lithography machine can be satisfied.
发明内容Summary of the invention
本发明的目的在于提供一种光刻机原位快速高空间分辨率波像差检测装置及方法，实时原位检测光刻机投影物镜的波像差，并提高检测分辨率。The object of the present invention is to provide a device and method for in-situ rapid high spatial resolution wave aberration detection of a lithography machine, which can detect the wave aberration of the projection objective of the lithography machine in real time and improve the detection resolution.
本发明的技术解决方案如下： The technical solution of the present invention is as follows:
一种光刻机原位快速高空间分辨率波像差检测装置，包括用于产生激光光束的光源、照明系统、物面光栅板、能承载物面光栅板并拥有精确定位能力的掩模台、光刻机投影物镜、波像差传感器、能承载波像差传感器并具有XYZ三维扫描能力和精确定位能力的工件台和计算机；An in-situ fast high spatial resolution wave aberration detecting device for a lithography machine, comprising a light source for generating a laser beam, an illumination system, a surface grating plate, a mask table capable of carrying a surface grating plate and having precise positioning capability a lithography machine projection objective lens, a wave aberration sensor, a workpiece stage and a computer capable of carrying a wave aberration sensor and having XYZ three-dimensional scanning capability and precise positioning capability;
上述各部件的连接关系如下：The connection relationship of the above components is as follows:
沿光束传播方向依次是所述的照明系统、物面光栅板、光刻机投影物镜和波像差传感器；The illumination system, the object grating plate, the lithography projection objective lens and the wave aberration sensor are sequentially arranged along the beam propagation direction;
所述的物面光栅板置于掩模台上，所述的波像差传感器置于工件台上，所述的波像差传感器与计算机相连；The object grating plate is placed on a mask table, the wave aberration sensor is placed on the workpiece table, and the wave aberration sensor is connected to the computer;
所述的物面光栅板由两个周期为Po且占空比为50％的物面光栅组成，两个物面光栅分别是光栅线沿y方向的第一光栅和光栅线沿x方向的第二光栅；The object grating plate is composed of two object gratings with a period of P o and a duty ratio of 50%, and the two object gratings are respectively the first grating of the grating line along the y direction and the grating line along the x direction. Second grating
所述的波像差传感器包括沿光束传播方向依次放置的像面光栅、小孔阵列和二维光电传感器；The wave aberration sensor includes an image area grating, a small hole array and a two-dimensional photoelectric sensor which are sequentially placed along a beam propagation direction;
所述的第一光栅和第二光栅的周期Po与所述的像面光栅的周期Pi满足如下关系；The period P o of the first grating and the second grating and the period P i of the image plane grating satisfy the following relationship;
Po＝Pi·MP o =P i ·M
其中，M为光刻机投影物镜的成像放大倍数。Where M is the imaging magnification of the projection objective of the lithography machine.
所述的第一光栅和第二光栅是相位光栅或振幅光栅或振幅相位相结合等其他类型的一维衍射光栅；The first grating and the second grating are phase gratings or amplitude gratings or a combination of amplitude and phase, and other types of one-dimensional diffraction gratings;
所述的像面光栅是占空比为50％的棋盘光栅等二维透射式光栅；The image plane grating is a two-dimensional transmission grating such as a checkerboard grating with a duty ratio of 50%;
所述的像面光栅是相位光栅或振幅光栅或振幅相位相结合等其他类型的衍射光栅；The image plane grating is a phase grating or an amplitude grating or a combination of amplitude and phase, and other types of diffraction gratings;
所述的小孔阵列的周期等于光电二维传感器的像素周期，小孔位置与光电二维传感器的像素位置一一对应，小孔直径为光电二维传感器像素大小的1/N，N为采样频率；The period of the aperture array is equal to the pixel period of the photoelectric two-dimensional sensor, and the aperture position corresponds to the pixel position of the photoelectric two-dimensional sensor, and the aperture diameter is 1/N of the pixel size of the photoelectric two-dimensional sensor, and N is sampling. frequency;
所述的掩模台是将物面光栅板移入光刻机投影物镜的物方光路的位移台；The mask table is a displacement stage for moving the object grating plate into the object optical path of the projection objective of the lithography machine;
所述的工件台是将所述的波像差传感器移入光刻机投影物镜的像方光路，并带动波像差传感器运动的位移台； The workpiece stage is a displacement stage for moving the wavefront aberration sensor into an image side optical path of a projection objective of the lithography machine and driving the wave aberration sensor to move;
所述的二维光电传感器是照相机、CCD、CMOS图像传感器、PEEM，或二维光电探测器阵列，其探测面上接收像面光栅生成并由小孔阵列进行采样得到的剪切干涉条纹；The two-dimensional photoelectric sensor is a camera, a CCD, a CMOS image sensor, a PEEM, or a two-dimensional photodetector array, and the detection surface receives a shear interference fringe generated by the image plane grating and sampled by the aperture array;
所述的计算机用于控制波像差检测过程、存储测量数据，并对干涉图进行处理与分析。The computer is used to control the wave aberration detection process, store measurement data, and process and analyze the interference map.
一种光刻机原位快速高空间分辨率波像差检测装置的波像差原位检测方法，包括下列步骤，A method for detecting in-situ wavefront aberration of an in-situ fast high spatial resolution wave aberration detecting device of a lithography machine, comprising the following steps,
(1)将物面光栅板置于掩模台上，调节掩模台，使第一光栅位于光刻机投影物镜需要测量的物方视场位置；(1) placing the surface grating plate on the mask table, adjusting the mask table so that the first grating is located at the object field of view position of the projection objective of the lithography machine;
(2)由光源发出的光经过照明系统的调整后，均匀照明物面光栅板的第一光栅；(2) uniformly adjusting the first grating of the object grating plate after the light emitted by the light source is adjusted by the illumination system;
(3)将波像差传感器置于工件台上，调节工件台，使像面光栅位于光刻机投影物镜的像面上；(3) placing the wave aberration sensor on the workpiece table, adjusting the workpiece table such that the image surface grating is located on the image surface of the projection objective of the lithography machine;
(4)利用现有技术调整工件台，使像面光栅与第一光栅经过光刻机投影物镜所成的像对准；(4) adjusting the workpiece stage by using the prior art, and aligning the image grating with the image formed by the first grating passing through the projection objective of the lithography machine;
(5)利用现有相移技术，沿x方向移动工件台进行多次测量，每次移动后波像差传感器采集一幅剪切干涉图，从采集得到的干涉图中计算得到相位信息；(5) Using the existing phase shifting technique, moving the workpiece table in the x direction to perform multiple measurements. After each movement, the wavefront aberration sensor acquires a shearing interferogram, and the phase information is calculated from the acquired interferogram;
(6)利用现有技术调整掩模台，使物面光栅板的第二光栅运动至第一光栅位置，第二光栅经过光刻机投影物镜所成的像与像面光栅对准；(6) adjusting the mask table by using the prior art to move the second grating of the object grating plate to the first grating position, and the image of the second grating passing through the projection objective of the lithography machine is aligned with the image grating;
(7)采用现有相移技术，沿y方向移动工件台进行多次测量，每次移动后波像差传感器采集一幅剪切干涉图，从采集得到的干涉图中计算得到相位信息；(7) Using the existing phase shifting technique, the workpiece table is moved in the y direction for multiple measurements. After each movement, the wavefront aberration sensor acquires a shearing interferogram, and the phase information is calculated from the acquired interferogram;
(8)将步骤(5)、(7)得到的相位信息采用现有技术解包裹，分别得到光刻机投影物镜在x方向和y方向的差分波前ΔWx和ΔWy，将差分波前采用现有波前重建技术进行重建，获得光刻机投影物镜的波像差。(8) The phase information obtained in steps (5) and (7) is unwrapped by the prior art, and the differential wavefronts ΔW x and ΔW y of the projection objective of the lithography machine in the x direction and the y direction are respectively obtained, and the differential wavefront is obtained. The existing wavefront reconstruction technique is used to reconstruct the wavefront aberration of the projection objective of the lithography machine.
与在先技术相比，本发明具有以下优点：Compared with the prior art, the present invention has the following advantages:
1)利用小孔阵列对光刻机的波像差进行采样，将实时原位检测空间分辨率提高了N2倍。1) Using the aperture array to sample the wavefront aberration of the lithography machine, the spatial resolution of the real-time in-situ detection is increased by N 2 times.
2)可以采用低像素个数的光电二维传感器用于实现波像差检测，降低工作发热量及提高检测速度。2) Photoelectric two-dimensional sensors with low pixel counts can be used to realize wave aberration detection, reduce work heat generation and improve detection speed.
附图说明 DRAWINGS
图1相当于无小孔阵列的检测误差。Figure 1 corresponds to the detection error of the apertureless array.
图2相当于加小孔阵列的检测误差。Figure 2 is equivalent to the detection error of the aperture array.
图3本发明的光刻机原位快速高空间分辨率波像差检测装置结构图。3 is a structural diagram of an in-situ fast high spatial resolution wave aberration detecting device of the lithography machine of the present invention.
图4本发明涉及到的物面光栅板。Figure 4 illustrates a surface grating plate in accordance with the present invention.
图5本发明的波像差传感器结构示意图。Figure 5 is a schematic view showing the structure of a wave aberration sensor of the present invention.
具体实施方式detailed description
下面结合仿真结果、实施例和附图对本发明作进一步说明，但不应以此实施实例限制本发明的保护范围。The present invention will be further described in conjunction with the simulation results, examples and drawings, but the scope of the present invention should not be limited by the examples.
图3是本发明采用的检测系统结构示意图。产生激光光束的光源1、照明系统2、物面光栅板3、用于承载物面光栅板3并拥有精确定位能力的掩模台4、用于将物面光栅成像到硅片上的光刻机投影物镜5、波像差传感器6、能承载波像差传感器6并具有XYZ三维扫描能力和精确定位能力的工件台7以及与波像差传感器6相连的数据处理计算机8；光源1的波长为193nm，物面光栅为一维振幅光栅，周期为41.52μm，光刻机投影物镜5的数值孔径为0.93，光刻机投影物镜5的成像放大倍数为1/4，像面光栅为二维棋盘光栅，周期为10.38μm；波像差传感器6包括沿光束传播方向依次放置的像面光栅601、小孔阵列602和二维光电传感器603；二维光电传感器603采用CMOS相机，像素大小7.4μm×7.4μm，像素个数640×480；小孔阵列602的小孔直径为1.85μm，采样频率N＝4，小孔阵列602的周期等于光电二维传感器603的像素周期7.4μm；3 is a schematic structural view of a detection system employed in the present invention. a light source for generating a laser beam, an illumination system 2, a surface grating plate 3, a mask table 4 for carrying the surface grating plate 3 and having precise positioning capability, and a photolithography for imaging the object surface grating onto the silicon wafer Projection objective lens 5, wave aberration sensor 6, workpiece stage 7 capable of carrying wave aberration sensor 6 and having XYZ three-dimensional scanning capability and precise positioning capability, and data processing computer 8 connected to wave aberration sensor 6; wavelength of light source 1 193nm, the object grating is a one-dimensional amplitude grating with a period of 41.52μm, the numerical aperture of the projection objective 5 of the lithography machine is 0.93, the imaging magnification of the projection objective 5 of the lithography machine is 1/4, and the image grating is two-dimensional. The checkerboard grating has a period of 10.38 μm; the wave aberration sensor 6 includes an image plane grating 601, an aperture array 602 and a two-dimensional photoelectric sensor 603 which are sequentially placed in the beam propagation direction; the two-dimensional photoelectric sensor 603 uses a CMOS camera with a pixel size of 7.4 μm. × 7.4 μm, the number of pixels is 640 × 480; the aperture size of the aperture array 602 is 1.85 μm, the sampling frequency is N = 4, and the period of the aperture array 602 is equal to the pixel period of the photoelectric two-dimensional sensor 603 is 7.4 μm;
所述的物面光栅板3由两个周期为Po且占空比为50％的物面光栅组成，两个物面光栅分别是光栅线沿y方向的第一光栅301和光栅线沿x方向的第二光栅302。The object surface grating plate 3 is composed of two object gratings with a period of P o and a duty ratio of 50%, and the two object plane gratings are the first grating 301 and the grating line along the y direction of the grating line respectively. A second grating 302 in the direction.
所述的第一光栅301和第二光栅302是相位光栅或振幅光栅或振幅相位相结合等其他类型的一维衍射光栅。The first grating 301 and the second grating 302 are other types of one-dimensional diffraction gratings such as a phase grating or an amplitude grating or an amplitude phase combination.
所述的波像差传感器6包括沿光束传播方向依次放置的像面光栅板601、小孔阵列602和二维光电传感器603。The wave aberration sensor 6 includes an image plane grating plate 601, an aperture array 602, and a two-dimensional photoelectric sensor 603 which are sequentially placed in the beam propagation direction.
所述的物面光栅的周期Po与所述的像面光栅601的周期Pi满足如下关系；The period P o of the object surface grating and the period P i of the image plane grating 601 satisfy the following relationship;
Po＝Pi·MP o =P i ·M
其中，M为光刻机投影物镜5的成像放大倍数； Wherein, M is an imaging magnification of the projection objective 5 of the lithography machine;
所述的像面光栅601是占空比为50％的棋盘光栅等二维透射式光栅；The image plane grating 601 is a two-dimensional transmission grating such as a checkerboard grating with a duty ratio of 50%;
所述的像面光栅601是相位光栅或振幅光栅或振幅相位相结合等其他类型的衍射光栅；The image plane grating 601 is a phase grating or an amplitude grating or a combination of amplitude and phase, and other types of diffraction gratings;
所述的小孔阵列602的周期等于光电二维传感器603的像素周期，小孔位置与光电二维传感器的像素位置一一对应，小孔直径为光电二维传感器603像素大小的1/N，N为采样频率；The period of the aperture array 602 is equal to the pixel period of the photoelectric two-dimensional sensor 603, and the aperture position is in one-to-one correspondence with the pixel position of the photoelectric two-dimensional sensor, and the aperture diameter is 1/N of the pixel size of the photoelectric two-dimensional sensor 603. N is the sampling frequency;
所述的掩模台4是将物面光栅板3移入光刻机投影物镜5的物方光路的位移台；The mask table 4 is a displacement stage for moving the object grating plate 3 into the object optical path of the projection objective 5 of the lithography machine;
所述的工件台7是将所述的波像差传感器6移入光刻机投影物镜5的像方光路，并带动波像差传感器6运动的位移台；The workpiece stage 7 is a displacement stage for moving the wavefront aberration sensor 6 into the image side optical path of the projector objective lens 5 and driving the wave aberration sensor 6 to move;
所述的二维光电传感器603是照相机、CCD、CMOS图像传感器、PEEM，或二维光电探测器阵列，其探测面上接收像面光栅601生成并由小孔阵列602进行采样得到的剪切干涉条纹；The two-dimensional photosensor 603 is a camera, CCD, CMOS image sensor, PEEM, or two-dimensional photodetector array, and the detection surface receives the shear interference generated by the image plane grating 601 and sampled by the aperture array 602. stripe;
所述的计算机8用于控制波像差检测过程、存储测量数据，并对干涉图进行处理与分析。The computer 8 is used to control the wave aberration detection process, store measurement data, and process and analyze the interference map.
一种光刻机原位快速高空间分辨率波像差检测装置的波像差原位检测方法，包括下列步骤，A method for detecting in-situ wavefront aberration of an in-situ fast high spatial resolution wave aberration detecting device of a lithography machine, comprising the following steps,
(1)将物面光栅板3置于掩模台4上，调节掩模台4，使第一光栅301位于光刻机投影物镜5需要测量的物方视场位置；(1) placing the object grating plate 3 on the mask table 4, adjusting the mask table 4, so that the first grating 301 is located at the object field of view position of the projection objective 5 of the lithography machine;
(2)由光源1发出的光经过照明系统2的调整后，均匀照明物面光栅板3的第一光栅301；(2) After the light emitted by the light source 1 is adjusted by the illumination system 2, the first grating 301 of the object grating plate 3 is uniformly illuminated;
(3)将波像差传感器6置于工件台7上，调节工件台7，使像面光栅601位于光刻机投影物镜5的像面上；(3) placing the wave aberration sensor 6 on the workpiece stage 7, and adjusting the workpiece stage 7 so that the image plane grating 601 is located on the image plane of the projection objective 5 of the lithography machine;
(4)利用现有技术调整工件台7，使像面光栅601与第一光栅301经过光刻机投影物镜5所成的像对准；(4) adjusting the workpiece stage 7 by the prior art, and aligning the image surface grating 601 with the image formed by the first grating 301 through the projection objective 5 of the lithography machine;
(5)利用现有相移技术，沿x方向移动工件台7进行多次测量，每次移动后波像差传感器6采集一幅剪切干涉图，从采集得到的干涉图中计算得到相位信息；(5) Using the existing phase shifting technique, the workpiece table 7 is moved in the x direction to perform multiple measurements. After each movement, the wave aberration sensor 6 acquires a shearing interferogram, and the phase information is calculated from the acquired interferogram. ;
(6)利用现有技术调整掩模台4，使物面光栅板3的第二光栅302运动至第一光栅301位置，第二光栅302经过光刻机投影物镜5所成的像与像面光栅601对准；(6) Adjusting the mask table 4 by the prior art, moving the second grating 302 of the object grating plate 3 to the position of the first grating 301, and the second grating 302 passes through the image and image surface formed by the projection objective 5 of the lithography machine. Alignment of grating 601;
(7)采用现有相移技术，沿y方向移动工件台7进行多次测量，每次移动后波像差传感器6采集一幅剪切干涉图，从采集得到的干涉图中计算得到相位信息； (7) Using the existing phase shifting technique, the workpiece table 7 is moved in the y direction for multiple measurements. After each movement, the wave aberration sensor 6 acquires a shearing interferogram, and the phase information is calculated from the acquired interferogram. ;
(8)将步骤(5)、(7)得到的相位信息采用现有技术解包裹，分别得到光刻机投影物镜5在x方向和y方向的差分波前ΔWx和ΔWy，将差分波前采用现有波前重建技术进行重建，获得光刻机投影物镜5的波像差。(8) The phase information obtained in steps (5) and (7) is unwrapped by the prior art, and the differential wavefronts ΔW x and ΔW y of the projection objective 5 of the lithography machine in the x direction and the y direction are respectively obtained, and the differential wave is obtained. The wavefront aberration of the projection objective lens 5 of the lithography machine is obtained by using the existing wavefront reconstruction technique for reconstruction.
本发明利用小孔阵列对波像差进行采样，将实时原位检测空间分辨率提高了N2倍。采用一个256像素×256像素的波像差(均方根值为0.0995λ)进行仿真。在其差分波前中每4个像素取平均值，相当于没有加小孔阵列，得到64像素×64像素的差分波前，采用现有技术将差分波前进行重建，误差见图1，其误差均方根值为0.0141λ；对该波像差的差分波前进行采样，每4个像素选一个像素，相当于在探测器上增加小孔阵列，得到64像素×64像素的差分波前，采用现有技术将差分波前进行重建，误差见图2，其均方根值误差为0.0001λ。The invention uses the aperture array to sample the wave aberration, and improves the spatial resolution of the real-time in-situ detection by N 2 times. The simulation was performed using a 256 pixel × 256 pixel wave aberration (root mean square value of 0.0995 λ). The average value of each of the four pixels in the differential wavefront is equivalent to the absence of the aperture array, and a differential wavefront of 64 pixels × 64 pixels is obtained. The differential wavefront is reconstructed by the prior art, and the error is shown in FIG. The root mean square error is 0.0141λ; the differential wavefront of the wave aberration is sampled, and one pixel is selected every 4 pixels, which is equivalent to adding a small hole array on the detector to obtain a differential wavefront of 64 pixels×64 pixels. The differential wavefront is reconstructed by the prior art, and the error is shown in Fig. 2, and the root mean square value error is 0.0001λ.
经实验验证，本发明装置及方法，将投影物镜波像差检测分辨率提高了16倍。或者同等条件下，像素个数可以减小至1/16，即检测速度提高16倍。 It has been experimentally verified that the apparatus and method of the present invention increase the resolution of projection object wave aberration detection by 16 times. Or under the same conditions, the number of pixels can be reduced to 1/16, that is, the detection speed is increased by 16 times.

Claims (9)

  1. 一种光刻机原位快速高空间分辨率波像差检测装置，其特征在于，该装置包括用于产生激光光束的光源(1)、照明系统(2)、物面光栅板(3)、能承载物面光栅板(3)并拥有精确定位能力的掩模台(4)、光刻机投影物镜(5)、波像差传感器(6)、能承载波像差传感器(6)并具有XYZ三维扫描能力和精确定位能力的工件台(7)和计算机(8)；A lithography machine in-situ rapid high spatial resolution wave aberration detecting device, characterized in that the device comprises a light source (1) for generating a laser beam, an illumination system (2), a surface grating plate (3), a mask table (4) capable of carrying a surface grating plate (3) and having precise positioning capability, a lithography machine projection objective lens (5), a wave aberration sensor (6), a wavefront aberration sensor (6), and having XYZ 3D scanning capability and precise positioning capability of the workpiece table (7) and computer (8);
    上述各部件的连接关系如下：The connection relationship of the above components is as follows:
    沿光束传播方向依次是所述的照明系统(2)、物面光栅板(3)、光刻机投影物镜(5)和波像差传感器(6)；The illumination system (2), the object grating plate (3), the lithography projector objective lens (5) and the wave aberration sensor (6) are sequentially arranged along the beam propagation direction;
    所述的物面光栅板(3)置于掩模台(4)上，所述的波像差传感器(6)置于工件台(7)上，所述的波像差传感器(6)与计算机(8)相连；The object grating plate (3) is placed on a mask table (4), and the wave aberration sensor (6) is placed on a workpiece table (7), and the wave aberration sensor (6) is Computer (8) connected;
    所述的物面光栅板(3)由两个周期为Po且占空比为50％的物面光栅组成，两个物面光栅分别是光栅线沿y方向的第一光栅(301)和光栅线沿x方向的第二光栅(302)；The object grating plate (3) is composed of two object gratings with a period of P o and a duty ratio of 50%, and the two object gratings are respectively a first grating (301) of the grating line along the y direction and a second grating (302) of the grating line along the x direction;
    所述的波像差传感器(6)包括沿光束传播方向依次放置的像面光栅(601)、小孔阵列(602)和二维光电传感器(603)；The wave aberration sensor (6) includes an image plane grating (601), an aperture array (602) and a two-dimensional photoelectric sensor (603) which are sequentially placed in the beam propagation direction;
    所述的第一光栅(301)和第二光栅(302)的周期Po与所述的像面光栅(601)的周期Pi满足如下关系；Said first grating (301) and the second grating (302) with a period P o of the raster image plane (601) satisfy the following period P i;
    Po＝Pi·MP o =P i ·M
    其中，M为光刻机投影物镜的成像放大倍数。Where M is the imaging magnification of the projection objective of the lithography machine.
  2. 根据权利要求1所述的光刻机原位快速高空间分辨率波像差检测装置，其特征在于，所述的第一光栅(301)和第二光栅(302)是相位光栅、振幅光栅或振幅相位相结合的一维衍射光栅。The in-situ fast high spatial resolution wave aberration detecting apparatus according to claim 1, wherein said first grating (301) and said second grating (302) are phase gratings, amplitude gratings or A one-dimensional diffraction grating combining amplitude and phase.
  3. 根据权利要求1所述的光刻机原位快速高空间分辨率波像差检测装置，其特征在于，所述的像面光栅(601)是占空比为50％的相位光栅、振幅光栅或振幅相位 相结合的衍射光栅，或者棋盘光栅等二维透射式光栅。The in-situ fast high spatial resolution wave aberration detecting apparatus of the lithography machine according to claim 1, wherein the image plane grating (601) is a phase grating having a duty ratio of 50%, an amplitude grating or Amplitude phase A combined diffraction grating, or a two-dimensional transmission grating such as a checkerboard grating.
  4. 根据权利要求1所述的光刻机原位快速高空间分辨率波像差检测装置，其特征在于，所述的小孔阵列(602)的周期等于光电二维传感器(603)的像素周期，小孔位置与光电二维传感器的像素位置一一对应，小孔直径为光电二维传感器(603)像素大小的1/N，N为采样频率。The in-situ fast high spatial resolution wave aberration detecting apparatus of the lithography apparatus according to claim 1, wherein the period of the aperture array (602) is equal to the pixel period of the photoelectric two-dimensional sensor (603). The position of the small hole corresponds to the pixel position of the photoelectric two-dimensional sensor, and the diameter of the small hole is 1/N of the pixel size of the photoelectric two-dimensional sensor (603), and N is the sampling frequency.
  5. 根据权利要求1所述的光刻机原位快速高空间分辨率波像差检测装置，其特征在于，所述的掩模台(4)是将物面光栅板(3)移入光刻机投影物镜(5)的物方光路的位移台。The in-situ fast high spatial resolution wave aberration detecting device of the lithography machine according to claim 1, wherein the mask table (4) moves the object grating plate (3) into the lithography machine projection The stage of the objective light path of the objective lens (5).
  6. 根据权利要求1所述的光刻机原位快速高空间分辨率波像差检测装置，其特征在于，所述的工件台(7)是将所述的波像差传感器(6)移入光刻机投影物镜(5)的像方光路，并带动波像差传感器(6)运动的位移台。The in-situ fast high spatial resolution wave aberration detecting apparatus according to claim 1, wherein said workpiece stage (7) moves said wave aberration sensor (6) into photolithography The image of the objective lens (5) of the objective lens (5), and the displacement of the wave aberration sensor (6).
  7. 根据权利要求1所述的光刻机原位快速高空间分辨率波像差检测装置，其特征在于，所述的计算机(8)用于控制波像差检测过程、存储测量数据，并对干涉图进行处理与分析。The in-situ fast high spatial resolution wave aberration detecting apparatus of the lithography machine according to claim 1, wherein said computer (8) is for controlling a wave aberration detecting process, storing measurement data, and interfering with The graph is processed and analyzed.
  8. 根据权利要求1所述的光刻机原位快速高空间分辨率波像差检测装置，其特征在于，所述的二维光电传感器(603)是照相机、CCD、CMOS图像传感器、PEEM，或二维光电探测器阵列，其探测面上接收像面光栅(601)生成并由小孔阵列(602)进行采样得到的剪切干涉条纹。The in-situ fast high spatial resolution wave aberration detecting apparatus of the lithography apparatus according to claim 1, wherein the two-dimensional photoelectric sensor (603) is a camera, a CCD, a CMOS image sensor, a PEEM, or two. The photodetector array has a shear interference fringe generated by the image plane grating (601) and sampled by the aperture array (602).
  9. 一种利用权利要求1-8任一所述的光刻机原位快速高空间分辨率波像差检测装置的进行波像差原位检测的方法，其特征在于，该方法包括下列步骤，A method for performing in-situ detection of wave aberration using the in-situ fast high spatial resolution wave aberration detecting device according to any one of claims 1-8, characterized in that the method comprises the following steps:
    ①将物面光栅板(3)置于掩模台(4)上，调节掩模台(4)，使第一光栅(301)位于光刻机投影物镜(5)需要测量的物方视场位置；1 Place the surface grating plate (3) on the mask table (4), and adjust the mask table (4) so that the first grating (301) is located in the object field of view of the projection objective lens (5) of the lithography machine. position;
    ②由光源(1)发出的激光光束经过照明系统(2)的调整后，均匀照明物面光栅板(3)的第一光栅(301)；2 after the laser beam emitted by the light source (1) is adjusted by the illumination system (2), uniformly illuminating the first grating (301) of the object grating plate (3);
    ③将波像差传感器(6)置于工件台(7)上，调节工件台(7)，使像面光栅(601)位于光刻机投影物镜(5)的像面上；3 Place the wave aberration sensor (6) on the workpiece table (7), adjust the workpiece table (7), and place the image surface grating (601) on the image surface of the projection objective (5) of the lithography machine;
    ④利用现有技术调整工件台(7)，使像面光栅(601)与第一光栅(301)经过光刻机投影物镜(5)所成的像对准；4 adjusting the workpiece table (7) by using the prior art, and aligning the image grating (601) with the image formed by the first grating (301) through the projection objective (5) of the lithography machine;
    ⑤采用现有相移技术，沿x方向移动工件台(7)进行多次测量，每次移动后波像差传感器(6)采集一幅剪切干涉图，从采集得到的干涉图中计算得到相位信息； 5 Using the existing phase shifting technique, the workpiece table (7) is moved in the x direction for multiple measurements. After each movement, the wavefront aberration sensor (6) acquires a shearing interferogram, which is calculated from the acquired interferogram. Phase information
    ⑥调整掩模台(4)，使物面光栅板(3)的第二光栅(302)运动至第一光栅(301)位置，第二光栅(302)经过光刻机投影物镜(5)所成的像与像面光栅(601)对准；6 adjusting the mask table (4), moving the second grating (302) of the object grating plate (3) to the position of the first grating (301), and passing the second grating (302) through the projection objective lens (5) of the lithography machine The image is aligned with the image plane grating (601);
    ⑦采用现有相移技术，沿y方向移动工件台(7)进行多次测量，每次移动后波像差传感器(6)采集一幅剪切干涉图，从采集得到的干涉图中计算得到相位信息；7 Using the existing phase shifting technique, the workpiece table (7) is moved in the y direction for multiple measurements. After each movement, the wavefront aberration sensor (6) acquires a shearing interferogram, which is calculated from the acquired interferogram. Phase information
    ⑧将步骤⑤、⑦得到的相位信息分别解包裹，得到光刻机投影物镜(5)在x方向和y方向的差分波前ΔWx和ΔWy，利用现有波前重建算法对差分波前进行重建，即获得光刻机投影物镜(5)的波像差。 8 Unwrapping the phase information obtained in steps 5 and 7 respectively, obtaining the differential wavefronts ΔW x and ΔW y of the projection objective (5) in the x direction and the y direction of the lithography machine, and using the existing wavefront reconstruction algorithm for the differential wavefront The reconstruction is performed to obtain the wave aberration of the projection objective (5) of the lithography machine.
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