WO2016178777A1 - Corrosion control for chamber components - Google Patents
Corrosion control for chamber components Download PDFInfo
- Publication number
- WO2016178777A1 WO2016178777A1 PCT/US2016/026156 US2016026156W WO2016178777A1 WO 2016178777 A1 WO2016178777 A1 WO 2016178777A1 US 2016026156 W US2016026156 W US 2016026156W WO 2016178777 A1 WO2016178777 A1 WO 2016178777A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- bellows
- coating
- chamber
- housing
- microns
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
- F16K41/00—Spindle sealings
- F16K41/10—Spindle sealings with diaphragm, e.g. shaped as bellows or tube
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16L—PIPES; JOINTS OR FITTINGS FOR PIPES; SUPPORTS FOR PIPES, CABLES OR PROTECTIVE TUBING; MEANS FOR THERMAL INSULATION IN GENERAL
- F16L11/00—Hoses, i.e. flexible pipes
- F16L11/14—Hoses, i.e. flexible pipes made of rigid material, e.g. metal or hard plastics
- F16L11/15—Hoses, i.e. flexible pipes made of rigid material, e.g. metal or hard plastics corrugated
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
- H01J37/32495—Means for protecting the vessel against plasma
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
- H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
- H10P72/7616—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating, a hardness or a material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
- H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
- H10P72/7626—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
Definitions
- Implementations described herein generally relate to semiconductor manufacturing and more particularly to a chamber components for protecting vacuum processing equipment from corrosion.
- a substrate may undergo many operations in a variety of processing chambers for the purpose of forming material layers and features suitable for an end use.
- the substrate may undergo several depositions, annealing, and etching operations, among other operations.
- the process chambers are formed from a variety of components formed from aluminum containing compounds, steel containing compounds, nickel containing compounds, among other compounds. These compounds may additionally contain chromium, titanium and molybdenum among other materials.
- Device miniaturization has made small dimensions for device patterns formed in a film layer of the substrate more critical. Achieving the critical dimensions in the substrate starts with a film layer of good quality and having good adhesion to underlying film layers in the substrate. To achieve a good quality film, the processing equipment is minimalizes processing chamber environmental contamination from affected or forming on substrates processed therein.
- a chamber component in a form of a bellows includes a top mounting flange coupled to a bottom mounting flange by a tubular accordion structure.
- a coating is disposed on an exterior surface of at least the tubular accordion structure.
- the coating includes of at least one of polytetrafluoroethylene (PTFE), parylene C, parylene D, diamond-like carbon, yttria stabilized zirconia, alumina, or aluminum silicon magnesium yttrium oxygen compound.
- a valve assembly in another example, includes a housing having a valve seat, an actuator coupled to the housing, a stem extending into the interior working volume of the housing, and a bellows circumscribing the stem.
- the stem is coupled to the actuator.
- the bellows isolates the stem from the interior working volume of the housing.
- the bellows has a coating exposed to an interior working volume of the housing.
- a chamber component in a form of a shield includes a tubular body having a cylindrical inside wall having a diameter of at least about 0.75 inches.
- the tubular body has a top end and a bottom end.
- the cylindrical inside wall at the top end has a first engagement feature configured to engage a substrate support of a processing chamber.
- Figure 1 is a cross-sectional schematic side view of a plasma processing chamber.
- Figure 3 illustrates another side plan view of the substrate support assembly in the plasma processing chamber having a flexible shield for corrosion protection.
- Figure 4 illustrates another side plan view of the substrate support assembly in the plasma processing chamber having thermal barriers for corrosion protection.
- Figure 5 illustrates a side plan view of a bellows holding device used for cleaning and applying the protective coating to the bellows
- Figure 6 illustrates a cross-sectional view of a valve assembly having corrosion protection.
- Chamber components are disclosed which are resistant to corrosion.
- a bellows of a substrate support is provided with a coating suitable for protecting the substrate support surfaces at high temperatures from the corrosive gases.
- the coating may be in the form of at least one plasma spray coating, 3D printing, cover plate, or other coating, which protects the bellows of the substrate support and significantly mitigate the formation of unwanted byproducts in the chamber environment resulting from attack by processing and/ or cleaning gases on chamber components.
- shields are employed to protect other chamber component from corrosion.
- FIG. 1 is a cross-sectional schematic view of an exemplary processing chamber 100 having a substrate support assembly 144 for supporting a substrate during processing within a chamber body 102.
- the substrate support assembly 144 generally includes a substrate support 120 coupled to a shaft 136.
- the substrate support assembly 144 may be moveable vertically between an elevated position and a lowered position.
- a bellows 186 disposed inside the chamber body 102 and is coupled between the substrate support assembly 144 and the chamber body 102. The bellows 186 allows the substrate support assembly 144 to move vertically within the chamber body 102 while providing a vacuum seal to prevent leakage into the processing chamber 100.
- the shaft 136 of the substrate support 120 is disposed within the bellows 186 and thus isolated from the interior of the chamber body 102 which protects the shaft 136 from corrosion during processing.
- the processing chamber 100 is configured as deposition chamber.
- the substrate support 120 may be utilized in other processing chambers, for example plasma treatment chambers, physical vapor deposition chambers, etch chambers chemical vapor deposition chambers, and ion implantation chambers, among other processing chambers subject to corrosive processing and/or cleaning gases.
- the processing chamber 100 includes a grounded chamber body 102.
- the chamber body 102 includes walls 103, a bottom 106 and a lid 108 which enclose an internal chamber volume 128.
- the chamber body 102 is coupled to a ground 126.
- a protective liner 164 is disposed in the internal chamber volume 128 to protect the walls 103 of the processing chamber 100.
- the protective liner 164 and walls 103 having an opening 1 18 through which a substrate (not shown) may be robotically transferred into and out of the internal chamber volume 128.
- a pumping port 178 is formed in one of the walls 103 or the bottom 106 of the chamber body 102.
- the pumping port 178 fluidly connects the internal chamber volume 128 to a pump valve assembly 170A.
- the pump valve assembly 170A is connected to a pumping system (not shown). The pumping system is utilized to maintain a vacuum environment within the internal chamber volume 128 of the processing chamber 100, while removing processing byproducts and corrosive gases from the internal chamber volume 128.
- a gas source 160 is coupled through a gas valve assembly 170B to the processing chamber 100.
- the gas source 160 provides process gases through the gas valve assembly 170B and into the internal chamber volume 128 through an inlet 161 formed through the chamber body 105 or lid 108.
- the gas valve assembly 170B may be configured to control the fluid flow through the inlet 161 into the internal chamber volume 128.
- process gases may include halogen-containing gases, such as fluorine gas and/or chlorine (CI) gas.
- the process gases may include deposition gases such as, for example, gases that include carbon (C), silicon (Si), oxygen (O), nitrogen (N), combinations thereof or other suitable gases.
- the gas source 160 also provides cleaning gases utilized to clean components present in or exposed to the internal chamber volume 128 of the processing chamber 100.
- cleaning gases which may be provided by the gas source 160 include halogen-containing gases, such as a fluorine gas, a fluorine- containing gas, a chlorine gas and/or a chlorine-containing gas.
- the pump valve assembly 170B may be configured to control the fluid flow gas source 160 through the inlet 161 into the internal chamber volume 128 of the processing chamber 100.
- the pump valve assembly 170B may be in an open state to allow process gases from the gas source 160 to be provided into the internal chamber volume 128 of the processing chamber 100 through the inlet 161 .
- the pump valve assembly 170B may be in a closed state to isolate the internal chamber volume 128 of the processing chamber 100 from the gas source 160.
- the pump valve assembly 170B has corrosion protection to protect the pump valve assembly 170B from damage from the gases flowing into the internal chamber volume 128 through the inlet 161 .
- a showerhead 184 may be coupled to the lid 108 of the processing chamber 100.
- the showerhead 184 has a plurality of gas delivery holes 158 for distributing process gases entering through the inlet 161 into the internal chamber volume 128.
- the showerhead 184 may be connected to an RF power source 142 through a match circuit 141 .
- the RF power provided by the RF power source 142 to the showerhead 184 energizes the process gases exiting the showerhead 184 for maintaining plasma between the showerhead 184 and substrate support assembly 144 within the internal chamber volume 128.
- the substrate support assembly 144 is disposed in the internal chamber volume 128.
- the substrate support assembly 144 includes a substrate support 120 coupled to a shaft 136.
- the substrate support 120 supports a substrate thereon during processing.
- the substrate support 120 may comprise a dielectric body 154.
- the dielectric body 154 may be formed from stainless steel or a nickel chromium alloy such as INCONEL ® 625.
- the dielectric body 154 may be formed from ceramic material, aluminum nitride, yttria alumina garnet, or other suitable alloy having chromium, molybdenum, titanium or other metal.
- the dielectric body 154 may optionally have an aluminum core coated with a dielectric material.
- a cathode electrode 122 is embedding within the dielectric body 154 of the substrate support 120.
- the cathode electrode is connected to an RF power source 138 through an integrated match circuit 137.
- the cathode electrode 122 capacitively couples power to the plasma from below the substrate disposed on the substrate support 120.
- the RF power source 138 provides the cathode electrode 122 with between about 200 Watts to about 1000 Watts of RF power.
- the RF power source 138 may also be coupled to a system controller (not shown) for controlling the operation of the cathode electrode 122 by directing a DC current to the cathode electrode 122 for chucking and de-chucking the substrate.
- the substrate support 120 may include one or more resistive heaters 124 embedded in the dielectric body 154.
- the resistive heaters 124 are coupled through an RF filter 148 to a heater power source 174.
- the resistive heaters 124 may be provided to elevate the temperature of the substrate support 120, and substrate disposed thereon, to a temperature for conducting substrate processing.
- the shaft 136 of the substrate support assembly 144 includes a top end 146 which couples to the body 154 of the substrate support 120.
- the shaft 136 may be disposed through a flange 188 in the bottom 106 of the processing chamber 100.
- the shaft 136 may be formed from an alloy containing chromium, titanium, molybdenum or other metal.
- the shaft 136 is formed from stainless steel.
- the shaft 136 is formed from I NCONEL ® 625.
- a thermal isolator 182 is coupled to, or around, a bottom portion 147 of the shaft 136.
- the thermal isolator 182 may have cooling channels 134 to prevent heat from the substrate support 120 from conducting down through the shaft 136 to components outside of the processing chamber 100. Additionally, the flange 188 may have thermally conductive material embedded therein to prevent heat from conducting to the outside of the processing chamber 100. The thermal isolation of the substrate support 120 from the outside environment allows better temperature control of the substrate support assembly 144. Passages may be formed through the thermal isolator 182 for routing conductors to the resistive heaters 124 and the cathode electrode 122, and for routing backside gas to the top of the substrate support 120 on which the substrate is supported.
- the substrate support assembly 144 may be movably coupled to the chamber body 102.
- the substrate support assembly 144 may be movable between an upper position (closer to the showerhead 184 for processing) and a lower position (aligned or below the opening 1 18 to facilitate substrate transfer).
- the bellows 186 may provide a flexible seal between the substrate support 120 and chamber body 102.
- the bellows 186 may have a body 196.
- the body 196 may have a cylindrical shaped tubular accordion structure.
- the body 196 has an outer surface 198.
- the outer surface 198 may be exposed to the internal chamber volume 128.
- a top 192 of the body 196 may contact an underside of the substrate support 120.
- a bottom 194 of the body 196 may contact the chamber body 102.
- the top 192 and bottom 194 may form a vacuum seal and prevents the process gases from leaking from the internal chamber volume 128 out of the chamber body 102.
- the bellows 186 may shield chamber components, such as the shaft 136, from corrosive plasma and/or heat in the internal chamber volume 128.
- the bellows 186 may also protect the thermal isolator 182, the flange 188, or some other portions of the substrate support assembly 144 from the chamber environment.
- the body 196 of the bellows 186 may be formed from materials containing titanium, molybdenum, and/or chromium, such as stainless steel, nickel-chromium alloys, for example Inconel 625, or other suitable material. In one embodiment, the bellows 186 are formed from stainless steel.
- the bellows 186 are formed from a nickel-chromium alloy containing molybdenum and niobium, such as Inconel 625.
- One or more chamber components have a coating 180 utilized to protect the component from the corrosive environment within the internal chamber volume 128 of the processing chamber 100.
- the coating 180 may be disposed on the substrate support 120.
- the coating 180 may be multilayered and in the form of a thin film, plating, spray coating, or other material coating disposed directly on the exterior of the substrate support 120.
- the coating 180 may additionally, or alternately, be formed on other chamber components, such as the outer surface 198 of the bellows 186.
- the coating 180 may be monolithic and comprise materials which can be conformally deposited, such as polytetrafluoroethylene (PTFE), parylene C, parylene D, diamond-like carbon, or selective coatings of ceramic such as yttria stabilized zirconia or alumina, or aluminum silicon magnesium yttrium oxygen compound, or other material suitable for protecting the substrate support assembly 144 from corrosive gases in the processing chamber 100.
- PTFE polytetrafluoroethylene
- parylene C parylene D
- diamond-like carbon or selective coatings of ceramic such as yttria stabilized zirconia or alumina, or aluminum silicon magnesium yttrium oxygen compound, or other material suitable for protecting the substrate support assembly 144 from corrosive gases in the processing chamber 100.
- the coating 180 may have multiple layers.
- the multiple layers of the coating 180 may be formed from one or more of the aforementioned suitable coating materials.
- the multiple layers may include two or more layers such as a bond layer and a protective
- the bond layer may be suited to the chamber component to promote adhesion thereto while the protection layer may be provide insulation of said chamber component from the corrosive chamber environment or high temperatures among other chamber hazards.
- the bond layer reduces the coefficient of thermal expansion mismatch between the chamber component and the protective layer to improve adhesion.
- the coefficient of thermal expansion mismatch is lower between the underlying chamber component and the bond layer and therefore the bond layer promotes good adhesion to the underlying chamber component.
- the bond layer allows the formation of the protection layer on the chamber component as the protection layer which is exposed to the interior of chamber.
- the protection layer is configured to have good mechanical properties and corrosion resistance for protecting the chamber component.
- the thickness of the DLC layer may be less than about 5 microns, such as between about 2 microns to about 3 microns.
- the Ni bond layer may have a thickness of less than about 12 microns.
- the Multilayer has improved mechanical properties, improved wear properties, and good adhesion. Additionally, a layer may be used as a wear indicator. The layer may be measured with a spectrometer, photometer, or other instrument to detect when a layer may need to be cleaned or replaced.
- the coating 180 may be applied by plasma sprayed, dipping, electrostatic powder coated, or applied in another suitable method to the chamber components. Alternately, the coating 180 may be deposited while 3D printing the chamber components. For example, the chamber component may be fully printed using a process of direct metal laser sintering with a final layer being the coating 180.
- the coating 180 may have a thickness of about 0.5 microns to about 50 microns, such as about 8 microns.
- the coating material may further be thermally treated to a temperature between about 650 degrees Celsius and about 1 , 100 degrees Celsius for improving adhesion strength to the base material underlying coating layer, i.e., the substrate support 120, bellows 186 and/or other chamber component. The thermal treatment may last for up to 10 hours to ensure good adhesion of the coating material to the base material of the chamber component.
- a nitrogen triflouride cleaning gas is introduced into the processing chamber 100 to form a plasma for cleaning the internal chamber volume 128 of the processing chamber 100.
- the temperature of the top surface of the substrate support 120 is maintained at a temperature in excess of about 400 degrees Celsius.
- Chromium, titanium, molybdenum and/or other byproducts may form in the internal chamber volume 128 of the processing chamber 100 from chamber components in the presence of corrosive processing gases, particularly when exposed to temperatures higher than about 400 degrees Celsius.
- the coating 180 protects the chamber components from reacting with the corrosive processing gases and forming chromium, titanium, and/or molybdenum contamination in the internal chamber volume 128 which may adversely affect substrates processed therein.
- FIG. 2 illustrates a side plan view of the substrate support assembly 144 having corrosion protection for the bellows 186 to prevent the corrosion of the bellows 186 and the introduction of contamination into the internal chamber volume 128, i.e., the processing environment, of the processing chamber 100.
- the corrosion protection may include one or more of a shield 210, thermal breaks 228, 288 and/or cooling channels 320, 380 (shown in figure 4).
- the shield 210 may protect the bellows 186 of other components of the substrate support assembly 144 from plasma corrosion or high temperatures.
- the shield 210 may have a hollow cylindrical shape.
- the shield 210 has an inner diameter 212 and an outer surface 214.
- the inner diameter 212 may be sized to form an opening suitable to accept the substrate support 120 therein.
- the shield 210 may be attached to the substrate support 120 at a fixed end 218.
- the shield 210 may also have a free end 216 which is not in contact with the chamber body or the flange 188.
- the shield 210 may move up and down with the movement of the substrate support 120.
- the shield 210 may be formed from aluminum, stainless steel, nickel, Inconel 625, yttria, or other suitable material.
- the shield 210 has the coating 220 applied to the outer surface 214.
- the coating 180 may be a multilayer coating such as a bond layer near or at the outer surface 214 and a protective layer disposed on the bond layer.
- the bonding layer may be between about 0.5 microns thick and about 5 microns thick, such as about 1 .5 microns thick.
- the protective layer may be between about 2 microns thick and about 20 microns thick, such as about 2.5 microns thick.
- the coating 180 may protect the shield 210 from plasma corrosion which may contribute contamination to the chamber processing environment and/or protect against the high chamber temperatures.
- the coating may be disposed on one or more of the chamber components.
- the substrate support 120 may have a coating 220.
- the bellows 186 may have a coating 224.
- One or more portions of the flange 188 may also have a coating 226.
- the coatings 220, 224, 226 may be substantially similar to coating 180 described above.
- the individual coatings 220, 224, 226 may be formed from different materials or thicknesses on the respective chamber components depending on reasons such as local temperatures, exposure to corrosive agents, the underlying material, requirements for elasticity, requirements for flexibility, or other factors.
- the coating 220 on the substrate support 120 may be formed thicker than the coating 224 formed on the bellows 186 as the coating 224 needs to be more flexible due to the repeated expanding and contracting motion of the bellows 186.
- the bellows 186 is protected from the corrosive processing gases and high temperatures by the coating 224. In other embodiments, the bellows 186 is protected from the corrosive processing gases and high temperatures by one or more of the coating 224, the shield 210 or thermal breaks 228, 288.
- the protection provided by the coating 224 prevents contamination, such as chromium, titanium and/or molybdenum particles, from accumulating in the internal volume of the processing chamber and contaminating the films deposited on substrates therein.
- contamination such as chromium, titanium and/or molybdenum particles
- the coating 180 and the shield 210 are used to protect the substrate support 120, the flange 188, and bellows 186.
- the substrate support 120 and bellows 186 may be formed from nickel-chromium alloy.
- the shield 210 may be formed from aluminum, such as 6061 -T6.
- the coating 180 may be formed from a polytetrafluoroethylene (PTFE), or parylene C or D material.
- the coating 180 may be from about 0.5 microns to about 50.0 microns, such as about 5 microns.
- the polytetrafluoroethylene (PTFE), or parylene C or D material may be chemical vapor deposited to form multiple layers, and may optionally have a bonding layer disposed therebetween.
- the coating 180 may be a very thin and conformal top layer, and for example, may be deposited using physical vapor deposition and/or chemical vapor deposition.
- the coating 180 is formed on the substrate support 120 and the bellows 186.
- the coating 180 on the substrate support 120 may be continuous and extend to and cover the bellows 186 as a unitary single coating.
- the substrate support 120 and bellows 186 may assembled together and the coating 180, i.e., coating 220, 224, is plasma sprayed on the substrate support 120 and bellows 186 in a single application.
- the coating 220 on the substrate support 120 and the coating 224 on the bellows 186 may be formed separately such that the coatings 220, 224 are not continuous across the substrate support 120 and bellows 186.
- the coating 220 prior to the assembly of the bellows 186 to the substrate support 120, the coating 220 may be formed on the substrate support 120 during one operation and the coating 224 is formed on the bellows 186 in a separate operation.
- the coating 224 on the bellows 186 is formed from a diamond-like carbon or a ceramic material such as yttria stabilized zirconia or alumina or AsMy.
- the coating 224 may have a thickness of about 0.5 microns to about 50.0 microns, such as about 5 microns for DLC and about 25 microns for ceramic.
- the diamond-like carbon or ceramic material may be chemical vapor deposited with multilayers having a bonding layer in between. A very thin and conformal top layer may be deposited using physical vapor deposition or chemical vapor deposition to cover any pours.
- the coating 220 of the substrate support 120 may be formed from polytetrafluoroethylene (PTFE), or parylene C or D, the diamond-like carbon or a ceramic material or a metal, such as a nickel coating.
- the coating 220 may have a thickness of about 0.5 microns to about 50.0 microns, such as about 12 microns.
- the coating 220 may be plasma sprayed with multilayers having a bonding layer in between and a thin conformal top layer.
- the bellows 186 are formed from a nickel-chromium alloy and protected from the corrosive processing gases and high temperatures by the coating 224 and the shield 210.
- the bellows 186 are formed from Inconel 625 and protected from the corrosive processing gases and high temperatures by a flexible shield 310.
- Figure 3 illustrates a side plan view of another substrate support assembly 300 for use in the plasma processing chamber 100.
- the substrate support assembly 300 has the flexible shield 310 for corrosion protection of the bellows 186.
- the flexible shield 310 may be made from polytetrafluoroethylene (PTFE) or other suitable material.
- the flexible shield 310 may have a snap seal 312 at one end and a second snap seal 314 at a second end.
- the substrate support 120 may have a feature 322 for interfacing with the snap seal 312.
- a second feature 384 may be disposed on the flange 188 for interfacing with the second snap seal 314.
- the snap seals 312, 314 and features 322, 384 may be in the form of a male/female interface, ball and socket, or other two part fastening system for sealingly joining to components.
- the snap seals 312, 314 create a fitted flexible labyrinth seal to the features 322, 384 to prevent corrosive material from entering the space of the bellows 186.
- the flexible shield 310 is easy to install and prevents contamination by mitigating the corrosion of the bellows 186 while prolonging the life cycle of the bellows 186.
- FIG 4 illustrates another side plan view of another substrate support assembly 400 for use in the plasma processing chamber 100.
- the substrate support assembly 400 has thermal barriers for reducing the temperature of the bellows 186 and flange 188.
- the thermal barrier may consist of thermal breaks 228, 288 and/or the cooling channels 320, 380.
- the flange 188 and bellows 186 get heated during processing due to the high processing temperatures, such as temperatures exceeding 300 degrees Celsius.
- the thermal breaks 228,288 interrupt the thermal conducting path through the substrate support assembly 400.
- the thermal breaks 228, 288 may be made of a low thermally conductive material which is 3D printed, sandwiched or coated in the substrate support 120 and flange 188.
- high thermal conductive graphene or metal foils can be casted or 3D printed or bonded in multiple layers in the substrate support 120 and flange 188 for maintaining a lower temperature at the bellows 186.
- the thermal breaks 228, 288 may be from multiple layers and have a total thickness of about 1 micron to about 30 microns, such as about 15 microns.
- the cooling channels 320, 380 may be 3D printed when fabricating the substrate support 120 or flange 188.
- the cooling channels 320, 380 may be used to maintain the bellows 186 at a desired temperature to reduce metal contamination.
- the Z axis growth may be paused to insert the high thermal conductive nano or micro Graphene foils.
- the bellows 186 are formed from a nickel- chromium alloy and protected from the high process temperatures by the thermal breaks 228, 288.
- One or more of the thermal breaks 228, 288 may be formed from graphene, and may have a thickness, for example, from about 0.5 microns to about 750 microns.
- the shield 210 may also protect the bellows 186.
- the shield 210 may be formed from aluminum, such as 6061 -T6 aluminum.
- the bellows 186 are formed from a nickel-chromium alloy and protected by two or more layers of thermal breaks 228 formed from graphene or metal foils in the substrate support, two or more layers of thermal breaks 228 formed from graphene or metal foils in the flange 188, and the shield 210.
- the bellows 186 are formed from a nickel-chromium alloy and protected from high process temperatures by two or more layers of thermal breaks 228 and cooling channels 320 formed in the substrate support, two or more layers of thermal breaks 228 and cooling channels 380 formed in the flange 188, and the shield 210.
- the bracket 502 has a plate 510, struts 504 and a support 520.
- the plate 510 may be attached to the bottom end 512 of the frame 586 holding the bellows186.
- the plate 510 is attached to the support 520 by the struts 504.
- the plate 510 or support 520 is moveable along the struts 504 relative to each other. Movement of the plate 510 may effect a length of the frame 586 for fully extending bellows 186 disposed on the frame. In this manner the bellows 186 will present a flat cylindrical surface for processing.
- the plate 510 and support 520 are fixed relative to each other.
- the support 520 may optionally have an attachment 590, such as a keyed hole, for accepting a motor or rotary device for spinning the bellows holding device 500 while the bellows holding device 500 has bellows 186 attached thereto and is undergoing processing.
- the rotary arrangement may rotate the bellows holding device 500 either clockwise or counterclockwise for control the uniformity of the thickness of the coating 180.
- the wear for the coating 180 may be more predictable and the bellows 186 may be serviced before corrosion of the bellows 186 contaminates the inner volume of the processing chamber during processing subtracts therein.
- FIG. 6 illustrates a cross-sectional view of the valve assembly 170 having corrosion protection.
- the valve assembly 170 may be utilized in other processing chambers, for example plasma treatment chambers, physical vapor deposition chambers, etch chambers chemical vapor deposition chambers, and ion implantation chambers, among other processing chambers subject to corrosive processing and/or cleaning fluids.
- the valve assembly 170 depicted in Figure 6 is of a globe valve, it should be appreciated that the corrosion control disclosed for valve assembly 170 is equally applicable to other types of valve assemblies such as butterfly valves, ball valves, diaphragm valves, gate valves and other valve assemblies suitable for having corrosive agents pass therethrough.
- the housing 610 may have a valve body coating 650.
- the valve body coating 650 may protect the interior working volume 602 of the housing 610 from corrosive agents such as cleaning gases, processing gases and the like.
- the inlet 612 may have a flange 616 for providing a fluid tight seal.
- the flange 616 may provide a seal for fluidly coupling the housing 610 to the processing chamber 100 or components thereof, such as the pumping port 178.
- the flange 616 may be formed from stainless steel, such a 304 SST, INCONEL ® 625, Haynes 242, or other suitable material.
- the flange 616 may have a flange coating 656.
- the flange coating 656 is configured to protect the flange 616 from corrosive agents entering in the inlet 612.
- the flange 616 at the inlet 612 is fluidly attached to the pumping port 178 of the chamber body 102.
- flange 616 at the inlet 612 is fluidly attached to the gas source 160.
- the outlet 614 may also have a flange 617.
- the flange 617 may provide a seal and fluidly attach the housing 610 to the processing chamber 100 or component thereof.
- the flange 617 may be formed from stainless steel, such a 304 SST, INCONEL ® 625, Haynes 242, or other suitable material.
- the flange 617 may have a flange coating 657.
- the flange coating 657 is configured to protect the flange 617 from corrosive agents entering leaving through the outlet 614.
- the outlet 614 is fluidly attached to the chamber body 102 or plumbing attached thereto such as the inlet 161 to the internal chamber volume 128. In another embodiment, the outlet 614 is fluidly coupled to the vacuum.
- the housing 610 may have a bonnet 618.
- the bonnet 618 may be attached to the housing 610 by fasteners, adhesives, welding, or by other suitable means.
- the bonnet 618 is attached to the housing 610 with screw type fasteners.
- the bonnet 618 forms a seal with the housing 610 such that fluids in the interior working volume 602 do not exit the housing 610 at or from the bonnet 618.
- the bonnet 618 may be fabricated from material similar to the housing 610.
- the bonnet 618 may be formed from stainless steel, such a 304 SST, INCONEL ® 625, Haynes 242, or other suitable material.
- An actuator 620 may be attached to one end of the stem 622.
- the actuator 620 may be a knob and screw, a solenoid, a pneumatic or hydraulic cylinder, a motor or other actuator suitable to linearly displace the stem 622.
- a valve plug 632 may be attached to the other end to the stem 622 that is disposed in the interior working volume 602 of the housing 610.
- the valve plug 632 may be formed from stainless steel, such a 304 SST, INCONEL ® 625, Haynes 242, or other suitable material.
- the actuator 620 may provide linear movement for the stem 622, and thus, the attached valve plug 632. For example, the actuator 620 may move the valve plug 632 upwards to a raised position, as shown by dotted line 672.
- the valve plug 632 may have a seat coating 652.
- the seat coating 652 is configured to protect the valve plug 632 from corrosive agents in the interior working volume 602 of the housing 610.
- a bellows 642 may be disposed in the interior working volume 602 of the housing 610.
- the bellows 642 may have an accordion shaped and have an interior bellows area 644.
- the bellows 642 may be cylindrical or polygonal in cross-section, circumscribing the interior bellows area 644.
- One end of the bellows 642 may be sealingly attached to the valve plug 632.
- the other end of the bellows 642 may be sealingly attached to either the housing 610 or the bonnet 618.
- a seal may be created between the valve plug 632 and the bonnet 618 to prevent fluids in the interior working volume 602 from entering the interior bellows area 644 defined inside the bellows 642 and the fluid exiting through the center opening 635 in the bonnet 618.
- the bellows 642 may be formed from stainless steel, such a 304 SST, INCONEL ® 625, Haynes 242, or other suitable material.
- the bellows 642 may have a bellows coating 654.
- the bellows coating 654 may be exposed to the fluids disposed in the interior working volume 602 of the housing 610.
- the bellows coating 654 is configured to protect the bellows 642 from corrosive agents in the interior working volume 602 of the housing 610.
- the chamber components may be protected by the various coatings, such as the valve body coating 650, seat coating 652, bellows coating 654 and flange coatings 656, 657, from reacting with corrosive agents, such as fluorine or chlorine, to form contamination in the interior volume of the processing chamber, such as chromium, titanium, and/or molybdenum.
- the coatings 650, 652, 654, 656, 657 may be monolithic and comprise materials which can be conformally deposited.
- the coatings may additionally, or alternately, be formed on other chamber components, such as the outer surface 198 of the lift pin bellows (not shown).
- the coatings 650, 652, 654, 656, 657 may be a carbon-containing material such as parylene (polyparaxylylene), for example parylene D or parylene C (chlorinated linear polyparaxylylene), parylene N (linear polyparaxylylene), and parylene X (cross-linked polyparaxylylene).
- parylene polyparaxylylene
- Other carbon-containing materials that may be used include PEEK (polyether ether ketones) and amorphous carbon materials such as diamondlike carbon (DLC).
- the DLC may have a thickness of about 0.5 microns to about 50.0 microns, such as about 5 microns.
- the coatings 650, 652, 654, 656, 657 may alternately may be a material such as polytetrafluoroethylene (PTFE) or selective coatings of ceramic such as yttria stabilized zirconia or alumina, or aluminum silicon magnesium yttrium oxygen compound, or other material suitable for protecting against corrosive fluids in the processing chamber 100.
- the ceramics may have a thickness of about 0.5 microns to about 50.0 microns, such as about 25 microns.
- the coatings may also be formed from nickel. The nickel may have a thickness of about 0.5 microns to about 50.0 microns, such as about 10 microns.
- the coatings 650, 652, 654, 656, 657 may have multiple layers.
- the multiple layers of the coatings 650, 652, 654, 656, 657 may be formed from one or more of the aforementioned suitable coating materials.
- the multiple layers may include two or more layers such as a bond layer and a protective layer.
- the bond layer may be suited to the chamber component to promote adhesion thereto while the protection layer may be provide insulation of said chamber component from the corrosive chamber environment or high temperatures among other chamber hazards.
- the valve assembly 170 is protected from corrosive agents flowing therethrough.
- the housing 610 of the valve assembly 170 is formed from 304 SST.
- the interior working volume 602 of the housing 610 is covered with the valve body coating 650 in the form of nickel.
- the nickel coating may be about 10 microns thick.
- the valve assembly 170 has flanges 616, 617 at the inlet 612 and outlet 614 formed from INCONEL ® 625.
- the valve plug 632 is also formed from INCONEL ® 625.
- the bellows 642 is formed from HAYNES ® 242 alloy. The bellows 642 protects the stem 622 and actuator 620 from being exposed to fluids present in the interior working volume 602 of the housing 610.
- the valve assembly 170 is protected from corrosive agents flowing therethrough.
- the housing 610 of the valve assembly 170 is formed from 304 SST.
- the interior working volume 602 of the housing 610 is covered with the valve body coating 650 in the form of nickel.
- the nickel coating may be about 10 microns thick.
- the valve assembly 170 has flanges 616, 617 at the inlet 612 and outlet 614 formed from INCONEL ® 625.
- the flange coatings 656, 657 of the flanges 616, 617 may be formed from nickel.
- the nickel coating may be about 10 microns thick.
- the valve plug 632 is also formed from I NCONEL ® 625.
- the seat coating 652 of the valve plug 632 is formed from nickel.
- the nickel coating may be about 10 microns thick.
- the bellows 642 is formed from HAYNES ® 242 alloy. The bellows 642 protects the stem 622 attaching the valve plug 632 to the actuator
- the valve assembly 170 is protected from corrosive agents flowing therethrough.
- the housing 610 of the valve assembly 170 is formed from 304 SST.
- the interior working volume 602 of the housing 610 is covered with the valve body coating 650.
- the valve body coating 650 may be nickel having a thickness of about 10 microns.
- the valve assembly 170 has flanges 616, 617 at the inlet 612 and outlet 614 formed from SST.
- the flange coatings 656, 657 of the flanges 616, 617 may be formed from nickel.
- the nickel coating may be about 10 microns thick.
- the valve plug 632 is formed from SST.
- the seat coating 652 of the valve plug 632 may be formed from nickel.
- the nickel coating may be about 10 microns thick.
- the bellows 642 is also formed from SST.
- the bellows coating 654 of the bellows 642 may be formed from nickel.
- the nickel coating may be about 10 microns thick.
- the bellows 642 and bellows coating 654 protect the stem 622 attaching the valve plug 632 to the actuator 620 from the corrosive agents.
- the valve assembly 170 is protected from corrosive agents flowing therethrough.
- the housing 610 of the valve assembly 170 is formed from 304 SST.
- the the interior working volume 602 of the housing 610 is covered in the valve body coating 650 in the form of a diamond-like coating (DLC).
- the DLC may be about 10 microns thick.
- the valve assembly 170 has flanges 616, 617 at the inlet 612 and outlet 614 formed from SST.
- the flange coatings 656, 657 of the flanges 616, 617 may formed from DLC.
- the DLC may be about 10 microns.
- the valve plug 632 is formed from SST.
- the seat coating 652 of the valve plug 632 may be formed from DLC.
- the DLC coating may be about 10 microns thick.
- the bellows 642 is also formed from SST.
- the bellows 642 is covered in about 10 microns thick DLC to form the bellows coating 654.
- the bellows 642 and bellows coating 654 protect the stem 622 attaching the valve plug 632 to the actuator 620 from the corrosive agents.
- the method and apparatus described above related to carbon film deposition at high temperatures, i.e., greater than 200 degrees Celsius, such as 300 degrees Celsius.
- the SST and nickel-chromium alloy chamber components are protected by the coating from reacting with the corrosive fluorine or chlorine and degrading the chamber components as well as forming potential contamination, such as chromium, titanium, and/or molybdenum.
- the bellows, substrate support, shaft, valve assembly or other chamber components may be formed from SST or INCONEL 625 and further protected from the corrosive processing gases and high temperatures by the coatings described above.
- the coating advantageously reduce the amount of Cr, Ti, and Mo enteri ng and contamination the interior volume of the processing chamber d u e to a tta c k o f chamber components by corrosive agents. Additionally, the preventative maintenance l i f e cycle for the chamber components are extended.
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Details Of Valves (AREA)
- Diaphragms And Bellows (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
Claims
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US15/110,714 US10190701B2 (en) | 2015-05-07 | 2016-04-06 | Corrosion control for chamber components |
| JP2017558503A JP6993881B2 (en) | 2015-05-07 | 2016-04-06 | Corrosion control for chamber parts |
| KR1020177035235A KR102554832B1 (en) | 2015-05-07 | 2016-04-06 | Corrosion Control for Chamber Components |
| CN201680026558.4A CN107636374B (en) | 2015-05-07 | 2016-04-06 | Corrugated pipe and valve component |
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IN2324/CHE/2015 | 2015-05-07 | ||
| IN2324CH2015 | 2015-05-07 | ||
| IN5174/CHE/2015 | 2015-09-28 | ||
| IN5174CH2015 | 2015-09-28 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2016178777A1 true WO2016178777A1 (en) | 2016-11-10 |
Family
ID=57217787
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/US2016/026156 Ceased WO2016178777A1 (en) | 2015-05-07 | 2016-04-06 | Corrosion control for chamber components |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US10190701B2 (en) |
| JP (1) | JP6993881B2 (en) |
| KR (1) | KR102554832B1 (en) |
| CN (1) | CN107636374B (en) |
| TW (1) | TWI673390B (en) |
| WO (1) | WO2016178777A1 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2019201088A (en) * | 2018-05-15 | 2019-11-21 | 東京エレクトロン株式会社 | Part forming method and plasma processing system |
| JP2019201087A (en) * | 2018-05-15 | 2019-11-21 | 東京エレクトロン株式会社 | Part forming method and plasma processing apparatus |
| JP2020064909A (en) * | 2018-10-15 | 2020-04-23 | 東京エレクトロン株式会社 | Assembly status presentation device and assembly status presentation method |
Families Citing this family (332)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9394608B2 (en) | 2009-04-06 | 2016-07-19 | Asm America, Inc. | Semiconductor processing reactor and components thereof |
| US20130023129A1 (en) | 2011-07-20 | 2013-01-24 | Asm America, Inc. | Pressure transmitter for a semiconductor processing environment |
| US10714315B2 (en) | 2012-10-12 | 2020-07-14 | Asm Ip Holdings B.V. | Semiconductor reaction chamber showerhead |
| US20160376700A1 (en) | 2013-02-01 | 2016-12-29 | Asm Ip Holding B.V. | System for treatment of deposition reactor |
| US11015245B2 (en) | 2014-03-19 | 2021-05-25 | Asm Ip Holding B.V. | Gas-phase reactor and system having exhaust plenum and components thereof |
| US10858737B2 (en) | 2014-07-28 | 2020-12-08 | Asm Ip Holding B.V. | Showerhead assembly and components thereof |
| US10941490B2 (en) | 2014-10-07 | 2021-03-09 | Asm Ip Holding B.V. | Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same |
| US10276355B2 (en) | 2015-03-12 | 2019-04-30 | Asm Ip Holding B.V. | Multi-zone reactor, system including the reactor, and method of using the same |
| US9828672B2 (en) | 2015-03-26 | 2017-11-28 | Lam Research Corporation | Minimizing radical recombination using ALD silicon oxide surface coating with intermittent restoration plasma |
| US10458018B2 (en) | 2015-06-26 | 2019-10-29 | Asm Ip Holding B.V. | Structures including metal carbide material, devices including the structures, and methods of forming same |
| US10887371B2 (en) | 2015-09-14 | 2021-01-05 | Google Llc | Systems and methods for content storage and retrieval |
| US10211308B2 (en) | 2015-10-21 | 2019-02-19 | Asm Ip Holding B.V. | NbMC layers |
| US10570257B2 (en) | 2015-11-16 | 2020-02-25 | Applied Materials, Inc. | Copolymerized high temperature bonding component |
| US11139308B2 (en) | 2015-12-29 | 2021-10-05 | Asm Ip Holding B.V. | Atomic layer deposition of III-V compounds to form V-NAND devices |
| US10529554B2 (en) | 2016-02-19 | 2020-01-07 | Asm Ip Holding B.V. | Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches |
| US10343920B2 (en) | 2016-03-18 | 2019-07-09 | Asm Ip Holding B.V. | Aligned carbon nanotubes |
| US20170292633A1 (en) | 2016-04-11 | 2017-10-12 | Mks Instruments, Inc. | Actively cooled vacuum isolation valve |
| US10190213B2 (en) | 2016-04-21 | 2019-01-29 | Asm Ip Holding B.V. | Deposition of metal borides |
| US10367080B2 (en) | 2016-05-02 | 2019-07-30 | Asm Ip Holding B.V. | Method of forming a germanium oxynitride film |
| US11453943B2 (en) | 2016-05-25 | 2022-09-27 | Asm Ip Holding B.V. | Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor |
| US10612137B2 (en) | 2016-07-08 | 2020-04-07 | Asm Ip Holdings B.V. | Organic reactants for atomic layer deposition |
| US9859151B1 (en) | 2016-07-08 | 2018-01-02 | Asm Ip Holding B.V. | Selective film deposition method to form air gaps |
| US9812320B1 (en) | 2016-07-28 | 2017-11-07 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
| KR102532607B1 (en) | 2016-07-28 | 2023-05-15 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus and method of operating the same |
| US9887082B1 (en) | 2016-07-28 | 2018-02-06 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
| US10643826B2 (en) | 2016-10-26 | 2020-05-05 | Asm Ip Holdings B.V. | Methods for thermally calibrating reaction chambers |
| US11532757B2 (en) | 2016-10-27 | 2022-12-20 | Asm Ip Holding B.V. | Deposition of charge trapping layers |
| US10714350B2 (en) | 2016-11-01 | 2020-07-14 | ASM IP Holdings, B.V. | Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
| KR102546317B1 (en) | 2016-11-15 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | Gas supply unit and substrate processing apparatus including the same |
| KR102762543B1 (en) | 2016-12-14 | 2025-02-05 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
| US11581186B2 (en) | 2016-12-15 | 2023-02-14 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus |
| US11447861B2 (en) | 2016-12-15 | 2022-09-20 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus and a method of forming a patterned structure |
| KR102700194B1 (en) | 2016-12-19 | 2024-08-28 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
| US10269558B2 (en) | 2016-12-22 | 2019-04-23 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
| US10867788B2 (en) | 2016-12-28 | 2020-12-15 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
| US11390950B2 (en) | 2017-01-10 | 2022-07-19 | Asm Ip Holding B.V. | Reactor system and method to reduce residue buildup during a film deposition process |
| US10468261B2 (en) | 2017-02-15 | 2019-11-05 | Asm Ip Holding B.V. | Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures |
| US10529563B2 (en) | 2017-03-29 | 2020-01-07 | Asm Ip Holdings B.V. | Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures |
| KR102457289B1 (en) | 2017-04-25 | 2022-10-21 | 에이에스엠 아이피 홀딩 비.브이. | Method for depositing a thin film and manufacturing a semiconductor device |
| US10892156B2 (en) | 2017-05-08 | 2021-01-12 | Asm Ip Holding B.V. | Methods for forming a silicon nitride film on a substrate and related semiconductor device structures |
| US10770286B2 (en) | 2017-05-08 | 2020-09-08 | Asm Ip Holdings B.V. | Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures |
| US10886123B2 (en) | 2017-06-02 | 2021-01-05 | Asm Ip Holding B.V. | Methods for forming low temperature semiconductor layers and related semiconductor device structures |
| US12040200B2 (en) | 2017-06-20 | 2024-07-16 | Asm Ip Holding B.V. | Semiconductor processing apparatus and methods for calibrating a semiconductor processing apparatus |
| US11306395B2 (en) | 2017-06-28 | 2022-04-19 | Asm Ip Holding B.V. | Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus |
| TWI794238B (en) | 2017-07-13 | 2023-03-01 | 荷蘭商Asm智慧財產控股公司 | Apparatus and method for removal of oxide and carbon from semiconductor films in a single processing chamber |
| KR20190009245A (en) | 2017-07-18 | 2019-01-28 | 에이에스엠 아이피 홀딩 비.브이. | Methods for forming a semiconductor device structure and related semiconductor device structures |
| US11374112B2 (en) | 2017-07-19 | 2022-06-28 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
| US10541333B2 (en) | 2017-07-19 | 2020-01-21 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
| US11018002B2 (en) | 2017-07-19 | 2021-05-25 | Asm Ip Holding B.V. | Method for selectively depositing a Group IV semiconductor and related semiconductor device structures |
| US10590535B2 (en) | 2017-07-26 | 2020-03-17 | Asm Ip Holdings B.V. | Chemical treatment, deposition and/or infiltration apparatus and method for using the same |
| TWI815813B (en) | 2017-08-04 | 2023-09-21 | 荷蘭商Asm智慧財產控股公司 | Showerhead assembly for distributing a gas within a reaction chamber |
| US10692741B2 (en) | 2017-08-08 | 2020-06-23 | Asm Ip Holdings B.V. | Radiation shield |
| US10770336B2 (en) | 2017-08-08 | 2020-09-08 | Asm Ip Holding B.V. | Substrate lift mechanism and reactor including same |
| US11139191B2 (en) | 2017-08-09 | 2021-10-05 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
| US11769682B2 (en) | 2017-08-09 | 2023-09-26 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
| US11830730B2 (en) | 2017-08-29 | 2023-11-28 | Asm Ip Holding B.V. | Layer forming method and apparatus |
| US11295980B2 (en) | 2017-08-30 | 2022-04-05 | Asm Ip Holding B.V. | Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures |
| US11056344B2 (en) | 2017-08-30 | 2021-07-06 | Asm Ip Holding B.V. | Layer forming method |
| KR102491945B1 (en) | 2017-08-30 | 2023-01-26 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
| KR102401446B1 (en) | 2017-08-31 | 2022-05-24 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
| KR102630301B1 (en) | 2017-09-21 | 2024-01-29 | 에이에스엠 아이피 홀딩 비.브이. | Method of sequential infiltration synthesis treatment of infiltrateable material and structures and devices formed using same |
| US10844484B2 (en) | 2017-09-22 | 2020-11-24 | Asm Ip Holding B.V. | Apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
| US10658205B2 (en) | 2017-09-28 | 2020-05-19 | Asm Ip Holdings B.V. | Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber |
| US10403504B2 (en) | 2017-10-05 | 2019-09-03 | Asm Ip Holding B.V. | Method for selectively depositing a metallic film on a substrate |
| US10923344B2 (en) | 2017-10-30 | 2021-02-16 | Asm Ip Holding B.V. | Methods for forming a semiconductor structure and related semiconductor structures |
| US10910262B2 (en) | 2017-11-16 | 2021-02-02 | Asm Ip Holding B.V. | Method of selectively depositing a capping layer structure on a semiconductor device structure |
| US11022879B2 (en) | 2017-11-24 | 2021-06-01 | Asm Ip Holding B.V. | Method of forming an enhanced unexposed photoresist layer |
| WO2019103613A1 (en) | 2017-11-27 | 2019-05-31 | Asm Ip Holding B.V. | A storage device for storing wafer cassettes for use with a batch furnace |
| TWI791689B (en) | 2017-11-27 | 2023-02-11 | 荷蘭商Asm智慧財產控股私人有限公司 | Apparatus including a clean mini environment |
| JP2021506126A (en) | 2017-12-07 | 2021-02-18 | ラム リサーチ コーポレーションLam Research Corporation | Oxidation resistant protective layer in chamber adjustment |
| US10760158B2 (en) | 2017-12-15 | 2020-09-01 | Lam Research Corporation | Ex situ coating of chamber components for semiconductor processing |
| US10872771B2 (en) | 2018-01-16 | 2020-12-22 | Asm Ip Holding B. V. | Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures |
| US11482412B2 (en) | 2018-01-19 | 2022-10-25 | Asm Ip Holding B.V. | Method for depositing a gap-fill layer by plasma-assisted deposition |
| TWI799494B (en) | 2018-01-19 | 2023-04-21 | 荷蘭商Asm 智慧財產控股公司 | Deposition method |
| US11018047B2 (en) | 2018-01-25 | 2021-05-25 | Asm Ip Holding B.V. | Hybrid lift pin |
| USD880437S1 (en) | 2018-02-01 | 2020-04-07 | Asm Ip Holding B.V. | Gas supply plate for semiconductor manufacturing apparatus |
| US11081345B2 (en) | 2018-02-06 | 2021-08-03 | Asm Ip Holding B.V. | Method of post-deposition treatment for silicon oxide film |
| US10896820B2 (en) | 2018-02-14 | 2021-01-19 | Asm Ip Holding B.V. | Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
| WO2019158960A1 (en) | 2018-02-14 | 2019-08-22 | Asm Ip Holding B.V. | A method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
| US10731249B2 (en) | 2018-02-15 | 2020-08-04 | Asm Ip Holding B.V. | Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus |
| KR102636427B1 (en) | 2018-02-20 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing method and apparatus |
| US10975470B2 (en) | 2018-02-23 | 2021-04-13 | Asm Ip Holding B.V. | Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment |
| US11473195B2 (en) | 2018-03-01 | 2022-10-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus and a method for processing a substrate |
| US11629406B2 (en) | 2018-03-09 | 2023-04-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate |
| US11114283B2 (en) * | 2018-03-16 | 2021-09-07 | Asm Ip Holding B.V. | Reactor, system including the reactor, and methods of manufacturing and using same |
| KR102646467B1 (en) | 2018-03-27 | 2024-03-11 | 에이에스엠 아이피 홀딩 비.브이. | Method of forming an electrode on a substrate and a semiconductor device structure including an electrode |
| US11230766B2 (en) | 2018-03-29 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
| US11088002B2 (en) | 2018-03-29 | 2021-08-10 | Asm Ip Holding B.V. | Substrate rack and a substrate processing system and method |
| KR102501472B1 (en) | 2018-03-30 | 2023-02-20 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing method |
| KR102600229B1 (en) | 2018-04-09 | 2023-11-10 | 에이에스엠 아이피 홀딩 비.브이. | Substrate supporting device, substrate processing apparatus including the same and substrate processing method |
| US12025484B2 (en) | 2018-05-08 | 2024-07-02 | Asm Ip Holding B.V. | Thin film forming method |
| TWI843623B (en) | 2018-05-08 | 2024-05-21 | 荷蘭商Asm Ip私人控股有限公司 | Methods for depositing an oxide film on a substrate by a cyclical deposition process and related device structures |
| US12272527B2 (en) | 2018-05-09 | 2025-04-08 | Asm Ip Holding B.V. | Apparatus for use with hydrogen radicals and method of using same |
| KR20190129718A (en) | 2018-05-11 | 2019-11-20 | 에이에스엠 아이피 홀딩 비.브이. | Methods for forming a doped metal carbide film on a substrate and related semiconductor device structures |
| KR102596988B1 (en) | 2018-05-28 | 2023-10-31 | 에이에스엠 아이피 홀딩 비.브이. | Method of processing a substrate and a device manufactured by the same |
| CN110556308B (en) * | 2018-06-01 | 2021-12-17 | 北京北方华创微电子装备有限公司 | Valve protection mechanism, process chamber and semiconductor equipment |
| US11718913B2 (en) | 2018-06-04 | 2023-08-08 | Asm Ip Holding B.V. | Gas distribution system and reactor system including same |
| TWI840362B (en) | 2018-06-04 | 2024-05-01 | 荷蘭商Asm Ip私人控股有限公司 | Wafer handling chamber with moisture reduction |
| US11286562B2 (en) | 2018-06-08 | 2022-03-29 | Asm Ip Holding B.V. | Gas-phase chemical reactor and method of using same |
| US10797133B2 (en) | 2018-06-21 | 2020-10-06 | Asm Ip Holding B.V. | Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures |
| KR102568797B1 (en) | 2018-06-21 | 2023-08-21 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing system |
| WO2020003000A1 (en) | 2018-06-27 | 2020-01-02 | Asm Ip Holding B.V. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
| KR20250134000A (en) | 2018-06-27 | 2025-09-09 | 에이에스엠 아이피 홀딩 비.브이. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
| KR102686758B1 (en) | 2018-06-29 | 2024-07-18 | 에이에스엠 아이피 홀딩 비.브이. | Method for depositing a thin film and manufacturing a semiconductor device |
| US10612136B2 (en) | 2018-06-29 | 2020-04-07 | ASM IP Holding, B.V. | Temperature-controlled flange and reactor system including same |
| US10755922B2 (en) | 2018-07-03 | 2020-08-25 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
| US10388513B1 (en) | 2018-07-03 | 2019-08-20 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
| US11053591B2 (en) | 2018-08-06 | 2021-07-06 | Asm Ip Holding B.V. | Multi-port gas injection system and reactor system including same |
| US10883175B2 (en) | 2018-08-09 | 2021-01-05 | Asm Ip Holding B.V. | Vertical furnace for processing substrates and a liner for use therein |
| JP7134020B2 (en) * | 2018-08-17 | 2022-09-09 | 東京エレクトロン株式会社 | Valve device, processing device and control method |
| US11430674B2 (en) | 2018-08-22 | 2022-08-30 | Asm Ip Holding B.V. | Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
| KR102707956B1 (en) | 2018-09-11 | 2024-09-19 | 에이에스엠 아이피 홀딩 비.브이. | Method for deposition of a thin film |
| US11024523B2 (en) | 2018-09-11 | 2021-06-01 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
| US11049751B2 (en) | 2018-09-14 | 2021-06-29 | Asm Ip Holding B.V. | Cassette supply system to store and handle cassettes and processing apparatus equipped therewith |
| CN110970344B (en) | 2018-10-01 | 2024-10-25 | Asmip控股有限公司 | Substrate holding device, system including the same and method of using the same |
| US11232963B2 (en) | 2018-10-03 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
| KR102592699B1 (en) | 2018-10-08 | 2023-10-23 | 에이에스엠 아이피 홀딩 비.브이. | Substrate support unit and apparatuses for depositing thin film and processing the substrate including the same |
| CN113196451A (en) | 2018-10-19 | 2021-07-30 | 朗姆研究公司 | In-situ protective coating for chamber components for semiconductor processing |
| KR102546322B1 (en) | 2018-10-19 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus and substrate processing method |
| KR102605121B1 (en) | 2018-10-19 | 2023-11-23 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus and substrate processing method |
| USD948463S1 (en) | 2018-10-24 | 2022-04-12 | Asm Ip Holding B.V. | Susceptor for semiconductor substrate supporting apparatus |
| US12378665B2 (en) | 2018-10-26 | 2025-08-05 | Asm Ip Holding B.V. | High temperature coatings for a preclean and etch apparatus and related methods |
| US11087997B2 (en) | 2018-10-31 | 2021-08-10 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
| KR102748291B1 (en) | 2018-11-02 | 2024-12-31 | 에이에스엠 아이피 홀딩 비.브이. | Substrate support unit and substrate processing apparatus including the same |
| US11572620B2 (en) | 2018-11-06 | 2023-02-07 | Asm Ip Holding B.V. | Methods for selectively depositing an amorphous silicon film on a substrate |
| US11031242B2 (en) | 2018-11-07 | 2021-06-08 | Asm Ip Holding B.V. | Methods for depositing a boron doped silicon germanium film |
| US10818758B2 (en) | 2018-11-16 | 2020-10-27 | Asm Ip Holding B.V. | Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures |
| US10847366B2 (en) | 2018-11-16 | 2020-11-24 | Asm Ip Holding B.V. | Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process |
| US12040199B2 (en) | 2018-11-28 | 2024-07-16 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
| US11217444B2 (en) | 2018-11-30 | 2022-01-04 | Asm Ip Holding B.V. | Method for forming an ultraviolet radiation responsive metal oxide-containing film |
| KR102636428B1 (en) | 2018-12-04 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | A method for cleaning a substrate processing apparatus |
| US11180847B2 (en) * | 2018-12-06 | 2021-11-23 | Applied Materials, Inc. | Atomic layer deposition coatings for high temperature ceramic components |
| US11158513B2 (en) | 2018-12-13 | 2021-10-26 | Asm Ip Holding B.V. | Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures |
| JP7504584B2 (en) | 2018-12-14 | 2024-06-24 | エーエスエム・アイピー・ホールディング・ベー・フェー | Method and system for forming device structures using selective deposition of gallium nitride - Patents.com |
| TWI866480B (en) | 2019-01-17 | 2024-12-11 | 荷蘭商Asm Ip 私人控股有限公司 | Methods of forming a transition metal containing film on a substrate by a cyclical deposition process |
| KR102727227B1 (en) | 2019-01-22 | 2024-11-07 | 에이에스엠 아이피 홀딩 비.브이. | Semiconductor processing device |
| CN111524788B (en) | 2019-02-01 | 2023-11-24 | Asm Ip私人控股有限公司 | Method for forming topologically selective films of silicon oxide |
| KR102626263B1 (en) | 2019-02-20 | 2024-01-16 | 에이에스엠 아이피 홀딩 비.브이. | Cyclical deposition method including treatment step and apparatus for same |
| TWI838458B (en) | 2019-02-20 | 2024-04-11 | 荷蘭商Asm Ip私人控股有限公司 | Apparatus and methods for plug fill deposition in 3-d nand applications |
| KR102638425B1 (en) | 2019-02-20 | 2024-02-21 | 에이에스엠 아이피 홀딩 비.브이. | Method and apparatus for filling a recess formed within a substrate surface |
| TWI845607B (en) | 2019-02-20 | 2024-06-21 | 荷蘭商Asm Ip私人控股有限公司 | Cyclical deposition method and apparatus for filling a recess formed within a substrate surface |
| TWI842826B (en) | 2019-02-22 | 2024-05-21 | 荷蘭商Asm Ip私人控股有限公司 | Substrate processing apparatus and method for processing substrate |
| CN109825827A (en) * | 2019-02-22 | 2019-05-31 | 沈阳富创精密设备有限公司 | A kind of preparation method of IC equipment plasma etch chamber protective coating |
| US11742198B2 (en) | 2019-03-08 | 2023-08-29 | Asm Ip Holding B.V. | Structure including SiOCN layer and method of forming same |
| KR102858005B1 (en) | 2019-03-08 | 2025-09-09 | 에이에스엠 아이피 홀딩 비.브이. | Method for Selective Deposition of Silicon Nitride Layer and Structure Including Selectively-Deposited Silicon Nitride Layer |
| KR102782593B1 (en) | 2019-03-08 | 2025-03-14 | 에이에스엠 아이피 홀딩 비.브이. | Structure Including SiOC Layer and Method of Forming Same |
| US11933942B2 (en) | 2019-03-25 | 2024-03-19 | Applied Materials, Inc. | Non-line-of-sight deposition of coating on internal components of assembled device |
| JP2020167398A (en) | 2019-03-28 | 2020-10-08 | エーエスエム・アイピー・ホールディング・ベー・フェー | Door openers and substrate processing equipment provided with door openers |
| KR102809999B1 (en) | 2019-04-01 | 2025-05-19 | 에이에스엠 아이피 홀딩 비.브이. | Method of manufacturing semiconductor device |
| KR102897355B1 (en) | 2019-04-19 | 2025-12-08 | 에이에스엠 아이피 홀딩 비.브이. | Layer forming method and apparatus |
| KR20200125453A (en) | 2019-04-24 | 2020-11-04 | 에이에스엠 아이피 홀딩 비.브이. | Gas-phase reactor system and method of using same |
| KR102869364B1 (en) | 2019-05-07 | 2025-10-10 | 에이에스엠 아이피 홀딩 비.브이. | Method for Reforming Amorphous Carbon Polymer Film |
| KR102929471B1 (en) | 2019-05-07 | 2026-02-20 | 에이에스엠 아이피 홀딩 비.브이. | Chemical source vessel with dip tube |
| KR102929472B1 (en) | 2019-05-10 | 2026-02-20 | 에이에스엠 아이피 홀딩 비.브이. | Method of depositing material onto a surface and structure formed according to the method |
| JP7612342B2 (en) | 2019-05-16 | 2025-01-14 | エーエスエム・アイピー・ホールディング・ベー・フェー | Wafer boat handling apparatus, vertical batch furnace and method |
| JP7598201B2 (en) | 2019-05-16 | 2024-12-11 | エーエスエム・アイピー・ホールディング・ベー・フェー | Wafer boat handling apparatus, vertical batch furnace and method |
| USD975665S1 (en) | 2019-05-17 | 2023-01-17 | Asm Ip Holding B.V. | Susceptor shaft |
| USD947913S1 (en) | 2019-05-17 | 2022-04-05 | Asm Ip Holding B.V. | Susceptor shaft |
| KR102686791B1 (en) | 2019-05-22 | 2024-07-19 | 어플라이드 머티어리얼스, 인코포레이티드 | Board support cover for high temperature and corrosive environments |
| USD935572S1 (en) | 2019-05-24 | 2021-11-09 | Asm Ip Holding B.V. | Gas channel plate |
| USD922229S1 (en) | 2019-06-05 | 2021-06-15 | Asm Ip Holding B.V. | Device for controlling a temperature of a gas supply unit |
| KR20200141003A (en) | 2019-06-06 | 2020-12-17 | 에이에스엠 아이피 홀딩 비.브이. | Gas-phase reactor system including a gas detector |
| KR102918757B1 (en) | 2019-06-10 | 2026-01-28 | 에이에스엠 아이피 홀딩 비.브이. | Method for cleaning quartz epitaxial chambers |
| KR20200143254A (en) | 2019-06-11 | 2020-12-23 | 에이에스엠 아이피 홀딩 비.브이. | Method of forming an electronic structure using an reforming gas, system for performing the method, and structure formed using the method |
| WO2020252020A1 (en) * | 2019-06-12 | 2020-12-17 | Lam Research Corporation | Sealant coating for plasma processing chamber components |
| USD944946S1 (en) | 2019-06-14 | 2022-03-01 | Asm Ip Holding B.V. | Shower plate |
| USD931978S1 (en) | 2019-06-27 | 2021-09-28 | Asm Ip Holding B.V. | Showerhead vacuum transport |
| KR102911421B1 (en) | 2019-07-03 | 2026-01-12 | 에이에스엠 아이피 홀딩 비.브이. | Temperature control assembly for substrate processing apparatus and method of using same |
| JP7499079B2 (en) | 2019-07-09 | 2024-06-13 | エーエスエム・アイピー・ホールディング・ベー・フェー | Plasma device using coaxial waveguide and substrate processing method |
| CN112216646B (en) | 2019-07-10 | 2026-02-10 | Asmip私人控股有限公司 | Substrate support assembly and substrate processing apparatus including the thereof |
| KR102895115B1 (en) | 2019-07-16 | 2025-12-03 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
| KR102955799B1 (en) | 2019-07-17 | 2026-04-21 | 에이에스엠 아이피 홀딩 비.브이. | Radical assist ignition plasma system and method |
| KR102860110B1 (en) | 2019-07-17 | 2025-09-16 | 에이에스엠 아이피 홀딩 비.브이. | Methods of forming silicon germanium structures |
| US11643724B2 (en) | 2019-07-18 | 2023-05-09 | Asm Ip Holding B.V. | Method of forming structures using a neutral beam |
| TWI839544B (en) | 2019-07-19 | 2024-04-21 | 荷蘭商Asm Ip私人控股有限公司 | Method of forming topology-controlled amorphous carbon polymer film |
| KR102903090B1 (en) | 2019-07-19 | 2025-12-19 | 에이에스엠 아이피 홀딩 비.브이. | Method of Forming Topology-Controlled Amorphous Carbon Polymer Film |
| TWI851767B (en) | 2019-07-29 | 2024-08-11 | 荷蘭商Asm Ip私人控股有限公司 | Methods for selective deposition utilizing n-type dopants and/or alternative dopants to achieve high dopant incorporation |
| KR102971074B1 (en) | 2019-07-30 | 2026-05-29 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus and method |
| CN112309899B (en) | 2019-07-30 | 2025-11-14 | Asmip私人控股有限公司 | Substrate processing equipment |
| CN112309900B (en) | 2019-07-30 | 2025-11-04 | Asmip私人控股有限公司 | Substrate processing equipment |
| US11227782B2 (en) | 2019-07-31 | 2022-01-18 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
| US11587815B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
| US12622218B2 (en) | 2019-07-31 | 2026-05-05 | Asm Ip Holding B.V. | Cassette lid opening device |
| US11587814B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
| CN112323048B (en) | 2019-08-05 | 2024-02-09 | Asm Ip私人控股有限公司 | Liquid level sensor for chemical source container |
| CN112342526A (en) | 2019-08-09 | 2021-02-09 | Asm Ip私人控股有限公司 | Heater assembly including cooling device and method of using same |
| DE102019121631A1 (en) * | 2019-08-12 | 2021-02-18 | Md Elektronik Gmbh | Laser processing device for shielded cables and method for operating a laser processing device for shielded cables |
| USD965524S1 (en) | 2019-08-19 | 2022-10-04 | Asm Ip Holding B.V. | Susceptor support |
| USD965044S1 (en) | 2019-08-19 | 2022-09-27 | Asm Ip Holding B.V. | Susceptor shaft |
| JP7810514B2 (en) | 2019-08-21 | 2026-02-03 | エーエスエム・アイピー・ホールディング・ベー・フェー | Film-forming raw material mixed gas generating device and film-forming device |
| USD949319S1 (en) | 2019-08-22 | 2022-04-19 | Asm Ip Holding B.V. | Exhaust duct |
| USD979506S1 (en) | 2019-08-22 | 2023-02-28 | Asm Ip Holding B.V. | Insulator |
| USD930782S1 (en) | 2019-08-22 | 2021-09-14 | Asm Ip Holding B.V. | Gas distributor |
| USD940837S1 (en) | 2019-08-22 | 2022-01-11 | Asm Ip Holding B.V. | Electrode |
| KR102983146B1 (en) | 2019-08-22 | 2026-06-26 | 에이에스엠 아이피 홀딩 비.브이. | Method for forming a structure with a hole |
| KR102928101B1 (en) | 2019-08-23 | 2026-02-13 | 에이에스엠 아이피 홀딩 비.브이. | Method for depositing silicon oxide film having improved quality by peald using bis(diethylamino)silane |
| US11286558B2 (en) | 2019-08-23 | 2022-03-29 | Asm Ip Holding B.V. | Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film |
| CN112442674A (en) | 2019-09-03 | 2021-03-05 | Asm Ip私人控股有限公司 | Method and apparatus for depositing chalcogenide films and structures including films |
| KR102806450B1 (en) | 2019-09-04 | 2025-05-12 | 에이에스엠 아이피 홀딩 비.브이. | Methods for selective deposition using a sacrificial capping layer |
| KR102733104B1 (en) | 2019-09-05 | 2024-11-22 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
| US12469693B2 (en) | 2019-09-17 | 2025-11-11 | Asm Ip Holding B.V. | Method of forming a carbon-containing layer and structure including the layer |
| US11562901B2 (en) | 2019-09-25 | 2023-01-24 | Asm Ip Holding B.V. | Substrate processing method |
| CN112593212B (en) | 2019-10-02 | 2023-12-22 | Asm Ip私人控股有限公司 | Method for forming topologically selective silicon oxide film through cyclic plasma enhanced deposition process |
| KR102948143B1 (en) | 2019-10-08 | 2026-04-07 | 에이에스엠 아이피 홀딩 비.브이. | Reactor system including a gas distribution assembly for use with activated species and method of using same |
| TWI846953B (en) | 2019-10-08 | 2024-07-01 | 荷蘭商Asm Ip私人控股有限公司 | Substrate processing device |
| TWI925822B (en) | 2019-10-08 | 2026-05-21 | 荷蘭商Asm Ip私人控股有限公司 | Gas injection system, reactor system, and method of depositing material on surface of substratewithin reaction chamber |
| KR102879443B1 (en) | 2019-10-10 | 2025-11-03 | 에이에스엠 아이피 홀딩 비.브이. | Method of forming a photoresist underlayer and structure including same |
| US12009241B2 (en) | 2019-10-14 | 2024-06-11 | Asm Ip Holding B.V. | Vertical batch furnace assembly with detector to detect cassette |
| TWI834919B (en) | 2019-10-16 | 2024-03-11 | 荷蘭商Asm Ip私人控股有限公司 | Method of topology-selective film formation of silicon oxide |
| US11637014B2 (en) | 2019-10-17 | 2023-04-25 | Asm Ip Holding B.V. | Methods for selective deposition of doped semiconductor material |
| KR102845724B1 (en) | 2019-10-21 | 2025-08-13 | 에이에스엠 아이피 홀딩 비.브이. | Apparatus and methods for selectively etching films |
| KR102960940B1 (en) | 2019-10-25 | 2026-05-04 | 에이에스엠 아이피 홀딩 비.브이. | Methods for filling a gap feature on a substrate surface and related semiconductor structures |
| US11646205B2 (en) | 2019-10-29 | 2023-05-09 | Asm Ip Holding B.V. | Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same |
| KR102890638B1 (en) | 2019-11-05 | 2025-11-25 | 에이에스엠 아이피 홀딩 비.브이. | Structures with doped semiconductor layers and methods and systems for forming same |
| CN112786521B (en) * | 2019-11-08 | 2025-07-11 | 盛美半导体设备(上海)股份有限公司 | Static-conductive substrate holding device |
| US11501968B2 (en) | 2019-11-15 | 2022-11-15 | Asm Ip Holding B.V. | Method for providing a semiconductor device with silicon filled gaps |
| KR102861314B1 (en) | 2019-11-20 | 2025-09-17 | 에이에스엠 아이피 홀딩 비.브이. | Method of depositing carbon-containing material on a surface of a substrate, structure formed using the method, and system for forming the structure |
| KR20210065848A (en) | 2019-11-26 | 2021-06-04 | 에이에스엠 아이피 홀딩 비.브이. | Methods for selectivley forming a target film on a substrate comprising a first dielectric surface and a second metallic surface |
| CN112951697B (en) | 2019-11-26 | 2025-07-29 | Asmip私人控股有限公司 | Substrate processing apparatus |
| CN120998766A (en) | 2019-11-29 | 2025-11-21 | Asm Ip私人控股有限公司 | Substrate processing equipment |
| CN120432376A (en) | 2019-11-29 | 2025-08-05 | Asm Ip私人控股有限公司 | Substrate processing equipment |
| JP7527928B2 (en) | 2019-12-02 | 2024-08-05 | エーエスエム・アイピー・ホールディング・ベー・フェー | Substrate processing apparatus and substrate processing method |
| KR20210070898A (en) | 2019-12-04 | 2021-06-15 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
| CN112992667A (en) | 2019-12-17 | 2021-06-18 | Asm Ip私人控股有限公司 | Method of forming vanadium nitride layer and structure including vanadium nitride layer |
| KR102943768B1 (en) | 2019-12-19 | 2026-03-26 | 에이에스엠 아이피 홀딩 비.브이. | Methods for filling a gap feature on a substrate and related semiconductor structures |
| KR102974179B1 (en) | 2020-01-06 | 2026-06-05 | 에이에스엠 아이피 홀딩 비.브이. | Channeled lift pin |
| TWI901623B (en) | 2020-01-06 | 2025-10-21 | 荷蘭商Asm Ip私人控股有限公司 | Gas supply assembly and valve plate assembly |
| US11993847B2 (en) | 2020-01-08 | 2024-05-28 | Asm Ip Holding B.V. | Injector |
| KR102882467B1 (en) | 2020-01-16 | 2025-11-05 | 에이에스엠 아이피 홀딩 비.브이. | Method of forming high aspect ratio features |
| KR102675856B1 (en) | 2020-01-20 | 2024-06-17 | 에이에스엠 아이피 홀딩 비.브이. | Method of forming thin film and method of modifying surface of thin film |
| TWI889744B (en) | 2020-01-29 | 2025-07-11 | 荷蘭商Asm Ip私人控股有限公司 | Contaminant trap system, and baffle plate stack |
| TWI871421B (en) | 2020-02-03 | 2025-02-01 | 荷蘭商Asm Ip私人控股有限公司 | Devices and structures including a vanadium or indium layer and methods and systems for forming the same |
| KR20210100010A (en) | 2020-02-04 | 2021-08-13 | 에이에스엠 아이피 홀딩 비.브이. | Method and apparatus for transmittance measurements of large articles |
| US11776846B2 (en) | 2020-02-07 | 2023-10-03 | Asm Ip Holding B.V. | Methods for depositing gap filling fluids and related systems and devices |
| TWI915339B (en) | 2020-02-13 | 2026-02-21 | 荷蘭商Asm Ip私人控股有限公司 | Gas distribution assembly, shower plate assembly, and method of adjusting conductance of gas to reaction chamber |
| KR102916725B1 (en) | 2020-02-13 | 2026-01-23 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus including light receiving device and calibration method of light receiving device |
| TWI855223B (en) | 2020-02-17 | 2024-09-11 | 荷蘭商Asm Ip私人控股有限公司 | Method for growing phosphorous-doped silicon layer |
| TWI895326B (en) | 2020-02-28 | 2025-09-01 | 荷蘭商Asm Ip私人控股有限公司 | System dedicated for parts cleaning |
| TWI914330B (en) | 2020-03-04 | 2026-02-11 | 荷蘭商Asm Ip私人控股有限公司 | Reactor system, and alignment fixture |
| US11415538B2 (en) * | 2020-03-06 | 2022-08-16 | Applied Materials, Inc. | Capacitive sensor housing for chamber condition monitoring |
| KR20210116240A (en) | 2020-03-11 | 2021-09-27 | 에이에스엠 아이피 홀딩 비.브이. | Substrate handling device with adjustable joints |
| US11876356B2 (en) | 2020-03-11 | 2024-01-16 | Asm Ip Holding B.V. | Lockout tagout assembly and system and method of using same |
| KR102775390B1 (en) | 2020-03-12 | 2025-02-28 | 에이에스엠 아이피 홀딩 비.브이. | Method for Fabricating Layer Structure Having Target Topological Profile |
| US12173404B2 (en) | 2020-03-17 | 2024-12-24 | Asm Ip Holding B.V. | Method of depositing epitaxial material, structure formed using the method, and system for performing the method |
| KR102755229B1 (en) | 2020-04-02 | 2025-01-14 | 에이에스엠 아이피 홀딩 비.브이. | Thin film forming method |
| TWI887376B (en) | 2020-04-03 | 2025-06-21 | 荷蘭商Asm Ip私人控股有限公司 | Method for manufacturing semiconductor device |
| TWI888525B (en) | 2020-04-08 | 2025-07-01 | 荷蘭商Asm Ip私人控股有限公司 | Apparatus and methods for selectively etching silcon oxide films |
| KR102970066B1 (en) | 2020-04-15 | 2026-05-28 | 에이에스엠 아이피 홀딩 비.브이. | Method of forming chromium nitride layer and structure including the chromium nitride layer |
| US11821078B2 (en) | 2020-04-15 | 2023-11-21 | Asm Ip Holding B.V. | Method for forming precoat film and method for forming silicon-containing film |
| US11996289B2 (en) | 2020-04-16 | 2024-05-28 | Asm Ip Holding B.V. | Methods of forming structures including silicon germanium and silicon layers, devices formed using the methods, and systems for performing the methods |
| TW202143328A (en) | 2020-04-21 | 2021-11-16 | 荷蘭商Asm Ip私人控股有限公司 | Method for adjusting a film stress |
| TWI921332B (en) | 2020-04-24 | 2026-04-11 | 荷蘭商Asm Ip私人控股有限公司 | Methods of forming structures including vanadium boride and vanadium phosphide layers, structures and devices formed thereby, and systems for manufacturing the devices |
| KR20210132600A (en) | 2020-04-24 | 2021-11-04 | 에이에스엠 아이피 홀딩 비.브이. | Methods and systems for depositing a layer comprising vanadium, nitrogen, and a further element |
| JP7816915B2 (en) | 2020-04-24 | 2026-02-18 | エーエスエム・アイピー・ホールディング・ベー・フェー | Method for forming a vanadium nitride-containing layer and structures including a vanadium nitride-containing layer |
| TWI913262B (en) | 2020-04-24 | 2026-02-01 | 荷蘭商Asm Ip私人控股有限公司 | Vertical batch furnace assembly, and method for cooling vertical batch furnace |
| US20210331183A1 (en) * | 2020-04-24 | 2021-10-28 | Applied Materials, Inc. | Fasteners for coupling components of showerhead assemblies |
| TWI887400B (en) | 2020-04-24 | 2025-06-21 | 荷蘭商Asm Ip私人控股有限公司 | Methods and apparatus for stabilizing vanadium compounds |
| KR102783898B1 (en) | 2020-04-29 | 2025-03-18 | 에이에스엠 아이피 홀딩 비.브이. | Solid source precursor vessel |
| KR20210134869A (en) | 2020-05-01 | 2021-11-11 | 에이에스엠 아이피 홀딩 비.브이. | Fast FOUP swapping with a FOUP handler |
| TWI907417B (en) | 2020-05-04 | 2025-12-11 | 荷蘭商Asm Ip私人控股有限公司 | Semiconductor processing system |
| JP7736446B2 (en) | 2020-05-07 | 2025-09-09 | エーエスエム・アイピー・ホールディング・ベー・フェー | Reactor system with tuned circuit |
| KR102788543B1 (en) | 2020-05-13 | 2025-03-27 | 에이에스엠 아이피 홀딩 비.브이. | Laser alignment fixture for a reactor system |
| TWI915365B (en) | 2020-05-15 | 2026-02-21 | 荷蘭商Asm Ip私人控股有限公司 | Method of forming a silicon germanium layer, semiconductor structure, semiconductor device, method of forming a deposition layer, and deposition system |
| TW202614152A (en) | 2020-05-19 | 2026-04-01 | 荷蘭商Asm Ip私人控股有限公司 | Substrate processing apparatus |
| KR102795476B1 (en) | 2020-05-21 | 2025-04-11 | 에이에스엠 아이피 홀딩 비.브이. | Structures including multiple carbon layers and methods of forming and using same |
| KR20210145079A (en) | 2020-05-21 | 2021-12-01 | 에이에스엠 아이피 홀딩 비.브이. | Flange and apparatus for processing substrates |
| TWI873343B (en) | 2020-05-22 | 2025-02-21 | 荷蘭商Asm Ip私人控股有限公司 | Reaction system for forming thin film on substrate |
| KR20210146802A (en) | 2020-05-26 | 2021-12-06 | 에이에스엠 아이피 홀딩 비.브이. | Method for depositing boron and gallium containing silicon germanium layers |
| TWI876048B (en) | 2020-05-29 | 2025-03-11 | 荷蘭商Asm Ip私人控股有限公司 | Substrate processing device |
| TW202212620A (en) | 2020-06-02 | 2022-04-01 | 荷蘭商Asm Ip私人控股有限公司 | Apparatus for processing substrate, method of forming film, and method of controlling apparatus for processing substrate |
| TW202618032A (en) | 2020-06-16 | 2026-05-01 | 荷蘭商Asm Ip私人控股有限公司 | Methods and systems for epitaxially growing boron doped silicon germanium layers and field effect transistors including the same |
| TWI908816B (en) | 2020-06-24 | 2025-12-21 | 荷蘭商Asm Ip私人控股有限公司 | Method for forming a layer provided with silicon |
| TWI873359B (en) | 2020-06-30 | 2025-02-21 | 荷蘭商Asm Ip私人控股有限公司 | Substrate processing method |
| US12431354B2 (en) | 2020-07-01 | 2025-09-30 | Asm Ip Holding B.V. | Silicon nitride and silicon oxide deposition methods using fluorine inhibitor |
| TW202202649A (en) | 2020-07-08 | 2022-01-16 | 荷蘭商Asm Ip私人控股有限公司 | Substrate processing method |
| KR20220010438A (en) | 2020-07-17 | 2022-01-25 | 에이에스엠 아이피 홀딩 비.브이. | Structures and methods for use in photolithography |
| TWI878570B (en) | 2020-07-20 | 2025-04-01 | 荷蘭商Asm Ip私人控股有限公司 | Method and system for depositing molybdenum layers |
| KR20220011092A (en) | 2020-07-20 | 2022-01-27 | 에이에스엠 아이피 홀딩 비.브이. | Method and system for forming structures including transition metal layers |
| US12322591B2 (en) | 2020-07-27 | 2025-06-03 | Asm Ip Holding B.V. | Thin film deposition process |
| KR20220020210A (en) | 2020-08-11 | 2022-02-18 | 에이에스엠 아이피 홀딩 비.브이. | Methods for Depositing a Titinum Aluminun Carbide Film Structuru on a Substrate and Releated Semiconductor Structures |
| KR102915124B1 (en) | 2020-08-14 | 2026-01-19 | 에이에스엠 아이피 홀딩 비.브이. | Method for processing a substrate |
| US12040177B2 (en) | 2020-08-18 | 2024-07-16 | Asm Ip Holding B.V. | Methods for forming a laminate film by cyclical plasma-enhanced deposition processes |
| TWI911263B (en) | 2020-08-25 | 2026-01-11 | 荷蘭商Asm Ip私人控股有限公司 | Method for cleaning a substrate, method for selectively depositing, and reaction system |
| US11725280B2 (en) | 2020-08-26 | 2023-08-15 | Asm Ip Holding B.V. | Method for forming metal silicon oxide and metal silicon oxynitride layers |
| TWI911265B (en) | 2020-08-27 | 2026-01-11 | 荷蘭商Asm Ip私人控股有限公司 | Method of forming patterned structures, method of manipulating mechanical property, and device structure |
| TWI904232B (en) | 2020-09-10 | 2025-11-11 | 荷蘭商Asm Ip私人控股有限公司 | Methods for depositing gap filing fluids and related systems and devices |
| USD990534S1 (en) | 2020-09-11 | 2023-06-27 | Asm Ip Holding B.V. | Weighted lift pin |
| KR20220036866A (en) | 2020-09-16 | 2022-03-23 | 에이에스엠 아이피 홀딩 비.브이. | Silicon oxide deposition method |
| USD1012873S1 (en) | 2020-09-24 | 2024-01-30 | Asm Ip Holding B.V. | Electrode for semiconductor processing apparatus |
| TWI889903B (en) | 2020-09-25 | 2025-07-11 | 荷蘭商Asm Ip私人控股有限公司 | Semiconductor processing method |
| US12009224B2 (en) | 2020-09-29 | 2024-06-11 | Asm Ip Holding B.V. | Apparatus and method for etching metal nitrides |
| KR20220045900A (en) | 2020-10-06 | 2022-04-13 | 에이에스엠 아이피 홀딩 비.브이. | Deposition method and an apparatus for depositing a silicon-containing material |
| CN114388427A (en) | 2020-10-06 | 2022-04-22 | Asm Ip私人控股有限公司 | Method and system for forming silicon nitride on sidewalls of features |
| CN114293174A (en) | 2020-10-07 | 2022-04-08 | Asm Ip私人控股有限公司 | Gas supply unit and substrate processing apparatus including the same |
| TWI918732B (en) | 2020-10-14 | 2026-03-21 | 荷蘭商Asm Ip私人控股有限公司 | Method of depositing material on stepped structure |
| KR102873665B1 (en) | 2020-10-15 | 2025-10-17 | 에이에스엠 아이피 홀딩 비.브이. | Method of manufacturing semiconductor device, and substrate treatment apparatus using ether-cat |
| KR102943887B1 (en) | 2020-10-16 | 2026-03-25 | 에이에스엠 아이피 홀딩 비.브이. | Method of forming structures for threshold voltage control |
| KR20220053482A (en) | 2020-10-22 | 2022-04-29 | 에이에스엠 아이피 홀딩 비.브이. | Method of depositing vanadium metal, structure, device and a deposition assembly |
| TW202223136A (en) | 2020-10-28 | 2022-06-16 | 荷蘭商Asm Ip私人控股有限公司 | Method for forming layer on substrate, and semiconductor processing system |
| TW202229620A (en) | 2020-11-12 | 2022-08-01 | 特文特大學 | Deposition system, method for controlling reaction condition, method for depositing |
| TW202229795A (en) | 2020-11-23 | 2022-08-01 | 荷蘭商Asm Ip私人控股有限公司 | A substrate processing apparatus with an injector |
| TW202235649A (en) | 2020-11-24 | 2022-09-16 | 荷蘭商Asm Ip私人控股有限公司 | Methods for filling a gap and related systems and devices |
| KR20220076343A (en) | 2020-11-30 | 2022-06-08 | 에이에스엠 아이피 홀딩 비.브이. | an injector configured for arrangement within a reaction chamber of a substrate processing apparatus |
| KR20220077875A (en) | 2020-12-02 | 2022-06-09 | 에이에스엠 아이피 홀딩 비.브이. | Cleaning fixture for showerhead assemblies |
| CN112431932B (en) * | 2020-12-07 | 2026-02-06 | 余姚市永创电磁阀有限公司 | Isolated anti-corrosion electromagnetic valve |
| US12255053B2 (en) | 2020-12-10 | 2025-03-18 | Asm Ip Holding B.V. | Methods and systems for depositing a layer |
| TWI916460B (en) | 2020-12-14 | 2026-03-01 | 荷蘭商Asm Ip私人控股有限公司 | Method of forming structures for threshold voltage control |
| CN114639631A (en) | 2020-12-16 | 2022-06-17 | Asm Ip私人控股有限公司 | Fixing device for measuring jumping and swinging |
| CN114649247A (en) | 2020-12-18 | 2022-06-21 | Asm Ip私人控股有限公司 | Wafer processing apparatus with rotatable table |
| TWI922546B (en) | 2020-12-22 | 2026-04-21 | 荷蘭商Asm Ip私人控股有限公司 | Transition metal deposition method, transition metal layer, and deposition assembly for depositing transition metal on substrate |
| TW202226899A (en) | 2020-12-22 | 2022-07-01 | 荷蘭商Asm Ip私人控股有限公司 | Plasma treatment device having matching box |
| TWI922548B (en) | 2020-12-22 | 2026-04-21 | 荷蘭商Asm Ip私人控股有限公司 | Precursor capsule, precursor vessel, vapor deposition assembly, and method of loading solid precursor into precursor vessel |
| KR20220097266A (en) | 2020-12-30 | 2022-07-07 | 에이에스엠 아이피 홀딩 비.브이. | Compositions for depositing material, synthesis methods and uses |
| USD981973S1 (en) | 2021-05-11 | 2023-03-28 | Asm Ip Holding B.V. | Reactor wall for substrate processing apparatus |
| USD980814S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas distributor for substrate processing apparatus |
| USD980813S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas flow control plate for substrate processing apparatus |
| USD1023959S1 (en) | 2021-05-11 | 2024-04-23 | Asm Ip Holding B.V. | Electrode for substrate processing apparatus |
| CN115424913B (en) * | 2021-06-01 | 2025-05-09 | 中微半导体设备(上海)股份有限公司 | A plasma processing device and a retractable sealing part thereof |
| US20230009692A1 (en) * | 2021-07-07 | 2023-01-12 | Applied Materials, Inc | Coated substrate support assembly for substrate processing |
| CN113764322B (en) * | 2021-09-03 | 2024-05-31 | 中科晶源微电子技术(北京)有限公司 | Carrying device, wafer transfer device, chamber device, and wafer processing equipment |
| USD990441S1 (en) | 2021-09-07 | 2023-06-27 | Asm Ip Holding B.V. | Gas flow control plate |
| USD1099184S1 (en) | 2021-11-29 | 2025-10-21 | Asm Ip Holding B.V. | Weighted lift pin |
| USD1060598S1 (en) | 2021-12-03 | 2025-02-04 | Asm Ip Holding B.V. | Split showerhead cover |
| US20230215702A1 (en) * | 2021-12-30 | 2023-07-06 | Applied Materials, Inc. | Uniformity control for plasma processing using wall recombination |
| US12191120B2 (en) | 2022-03-10 | 2025-01-07 | Applied Materials, Inc. | Multilayer coating for corrosion resistance |
| KR20230167552A (en) * | 2022-06-02 | 2023-12-11 | 현대자동차주식회사 | Valve device |
| US12334356B2 (en) * | 2022-06-06 | 2025-06-17 | Tokyo Electron Limited | Plasma etching tools and systems |
| US12140339B2 (en) * | 2022-10-13 | 2024-11-12 | Applied Materials, Inc. | Filter isolation for equipment front end module |
| CN118942992A (en) * | 2023-05-09 | 2024-11-12 | 中微半导体设备(上海)股份有限公司 | Radio frequency transmission element and preparation method thereof, and plasma device |
| CN117070920A (en) * | 2023-10-12 | 2023-11-17 | 江苏微导纳米科技股份有限公司 | Processing equipment using gas and manufacturing method thereof |
| US20250326034A1 (en) * | 2024-04-18 | 2025-10-23 | Applied Materials, Inc. | 3d printing using ald-coated powder |
| US20250343067A1 (en) * | 2024-05-01 | 2025-11-06 | Applied Materials, Inc. | Volume reduction in semiconductor processing chamber |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11236971A (en) * | 1997-12-02 | 1999-08-31 | Tadahiro Omi | Bellows with surface treatment |
| US20070125494A1 (en) * | 2002-09-30 | 2007-06-07 | Tokyo Electron Limited | Method and apparatus for an improved bellows shield in a plasma processing system |
| JP2009152534A (en) * | 2007-12-21 | 2009-07-09 | Epicrew Inc | Semiconductor substrate processing system and method for processing semiconductor substrate |
| KR101038541B1 (en) * | 2010-12-06 | 2011-06-07 | 주식회사 썬닉스 | Bellows excellent in corrosion resistance and manufacturing method thereof |
| KR20150003434A (en) * | 2013-07-01 | 2015-01-09 | 권복화 | gate valve |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3808816A (en) * | 1972-08-15 | 1974-05-07 | Robertshaw Controls Co | Temperature responsive device |
| US6537201B1 (en) * | 2001-09-28 | 2003-03-25 | Otologics Llc | Implantable hearing aid with improved sealing |
| JP2004214370A (en) | 2002-12-27 | 2004-07-29 | Nippon Itf Kk | Plasma resistant bellows |
| DE602004026334D1 (en) * | 2003-10-17 | 2010-05-12 | Sundew Technologies Llc | FALL-SAFE, PNEUMATICALLY ACTUATED VALVE |
| US20090242043A1 (en) * | 2008-03-31 | 2009-10-01 | Gm Global Technology Operations, Inc. | Hydrogen supply pressure regulator |
| JP5558460B2 (en) * | 2009-03-30 | 2014-07-23 | イーグル工業株式会社 | Bellows type mechanical seal |
| CN202065548U (en) * | 2011-04-20 | 2011-12-07 | 武天平 | Universal valve of built-in corrugated pipe |
-
2016
- 2016-04-06 US US15/110,714 patent/US10190701B2/en active Active
- 2016-04-06 CN CN201680026558.4A patent/CN107636374B/en active Active
- 2016-04-06 WO PCT/US2016/026156 patent/WO2016178777A1/en not_active Ceased
- 2016-04-06 JP JP2017558503A patent/JP6993881B2/en active Active
- 2016-04-06 KR KR1020177035235A patent/KR102554832B1/en active Active
- 2016-04-20 TW TW105112273A patent/TWI673390B/en active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11236971A (en) * | 1997-12-02 | 1999-08-31 | Tadahiro Omi | Bellows with surface treatment |
| US20070125494A1 (en) * | 2002-09-30 | 2007-06-07 | Tokyo Electron Limited | Method and apparatus for an improved bellows shield in a plasma processing system |
| JP2009152534A (en) * | 2007-12-21 | 2009-07-09 | Epicrew Inc | Semiconductor substrate processing system and method for processing semiconductor substrate |
| KR101038541B1 (en) * | 2010-12-06 | 2011-06-07 | 주식회사 썬닉스 | Bellows excellent in corrosion resistance and manufacturing method thereof |
| KR20150003434A (en) * | 2013-07-01 | 2015-01-09 | 권복화 | gate valve |
Cited By (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2022173242A (en) * | 2018-05-15 | 2022-11-18 | 東京エレクトロン株式会社 | Plasma processing device and component |
| JP7556106B2 (en) | 2018-05-15 | 2024-09-25 | 東京エレクトロン株式会社 | Method for forming electrostatic chuck and plasma processing apparatus |
| JP2019201087A (en) * | 2018-05-15 | 2019-11-21 | 東京エレクトロン株式会社 | Part forming method and plasma processing apparatus |
| WO2019221022A1 (en) * | 2018-05-15 | 2019-11-21 | 東京エレクトロン株式会社 | Method of forming component, and plasma processing device |
| JP7812896B2 (en) | 2018-05-15 | 2026-02-10 | 東京エレクトロン株式会社 | Plasma processing equipment and components |
| CN111133562A (en) * | 2018-05-15 | 2020-05-08 | 东京毅力科创株式会社 | Component forming method and substrate processing system |
| KR20210009295A (en) * | 2018-05-15 | 2021-01-26 | 도쿄엘렉트론가부시키가이샤 | Component formation method and substrate processing system |
| JP7068921B2 (en) | 2018-05-15 | 2022-05-17 | 東京エレクトロン株式会社 | Parts forming method and plasma processing equipment |
| JP2022103240A (en) * | 2018-05-15 | 2022-07-07 | 東京エレクトロン株式会社 | Plasma processing equipment and parts for plasma processing equipment |
| JP7790851B2 (en) | 2018-05-15 | 2025-12-23 | 東京エレクトロン株式会社 | Plasma processing apparatus, annular consumable part, and method for manufacturing annular consumable part |
| TWI776055B (en) * | 2018-05-15 | 2022-09-01 | 日商東京威力科創股份有限公司 | Parts forming method and plasma processing apparatus |
| JP7138474B2 (en) | 2018-05-15 | 2022-09-16 | 東京エレクトロン株式会社 | Parts repair method and substrate processing system |
| WO2019221023A1 (en) * | 2018-05-15 | 2019-11-21 | 東京エレクトロン株式会社 | Method of forming component and substrate processing system |
| JP2019201088A (en) * | 2018-05-15 | 2019-11-21 | 東京エレクトロン株式会社 | Part forming method and plasma processing system |
| US11981993B2 (en) | 2018-05-15 | 2024-05-14 | Tokyo Electron Limited | Forming method of component and substrate processing system |
| TWI815575B (en) * | 2018-05-15 | 2023-09-11 | 日商東京威力科創股份有限公司 | Plasma treatment equipment and parts for plasma treatment equipment |
| JP2023153859A (en) * | 2018-05-15 | 2023-10-18 | 東京エレクトロン株式会社 | Electrostatic chuck forming method and plasma processing device |
| US11967487B2 (en) | 2018-05-15 | 2024-04-23 | Tokyo Electron Limited | Forming method of component and plasma processing apparatus |
| JP7319425B2 (en) | 2018-05-15 | 2023-08-01 | 東京エレクトロン株式会社 | Plasma processing equipment and parts for plasma processing equipment |
| JP7534052B2 (en) | 2018-05-15 | 2024-08-14 | 東京エレクトロン株式会社 | Plasma processing equipment and parts |
| CN111133562B (en) * | 2018-05-15 | 2024-08-20 | 东京毅力科创株式会社 | Component forming method and substrate processing system |
| JP2024116179A (en) * | 2018-05-15 | 2024-08-27 | 東京エレクトロン株式会社 | Plasma processing equipment and parts |
| KR102521914B1 (en) | 2018-05-15 | 2023-04-14 | 도쿄엘렉트론가부시키가이샤 | Part restoration method and substrate handling system |
| JP2024166325A (en) * | 2018-05-15 | 2024-11-28 | 東京エレクトロン株式会社 | Plasma processing device and components for the mounting table |
| JP7103910B2 (en) | 2018-10-15 | 2022-07-20 | 東京エレクトロン株式会社 | Assembly status presentation device and assembly status presentation method |
| JP2020064909A (en) * | 2018-10-15 | 2020-04-23 | 東京エレクトロン株式会社 | Assembly status presentation device and assembly status presentation method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107636374B (en) | 2019-12-27 |
| US10190701B2 (en) | 2019-01-29 |
| US20170152968A1 (en) | 2017-06-01 |
| CN107636374A (en) | 2018-01-26 |
| KR20180002840A (en) | 2018-01-08 |
| TWI673390B (en) | 2019-10-01 |
| JP2018515691A (en) | 2018-06-14 |
| KR102554832B1 (en) | 2023-07-11 |
| TW201641744A (en) | 2016-12-01 |
| JP6993881B2 (en) | 2022-01-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10190701B2 (en) | Corrosion control for chamber components | |
| KR102594538B1 (en) | Plasma corrosion resistive heater for high temperature processing | |
| US7780786B2 (en) | Internal member of a plasma processing vessel | |
| US10266943B2 (en) | Plasma corrosion resistive heater for high temperature processing | |
| JP4503270B2 (en) | Inside the plasma processing vessel | |
| CN119604972B (en) | Slit valve door, slit valve and method of manufacturing slit valve door | |
| US20190226087A1 (en) | Heated ceramic faceplate | |
| KR20160106747A (en) | Diffusion bonded plasma resisted chemical vapor deposition (cvd) chamber heater | |
| US12027354B2 (en) | Cleaning of SIN with CCP plasma or RPS clean | |
| TW201641739A (en) | Atomic layer growth device and atomic layer growth device exhaust unit | |
| WO2021216445A1 (en) | Preclean chamber upper shield with showerhead | |
| KR102251770B1 (en) | High temperature faceplate with hybrid material design |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| WWE | Wipo information: entry into national phase |
Ref document number: 15110714 Country of ref document: US |
|
| 121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 16789730 Country of ref document: EP Kind code of ref document: A1 |
|
| ENP | Entry into the national phase |
Ref document number: 2017558503 Country of ref document: JP Kind code of ref document: A |
|
| NENP | Non-entry into the national phase |
Ref country code: DE |
|
| ENP | Entry into the national phase |
Ref document number: 20177035235 Country of ref document: KR Kind code of ref document: A |
|
| 122 | Ep: pct application non-entry in european phase |
Ref document number: 16789730 Country of ref document: EP Kind code of ref document: A1 |