CN117070920A

CN117070920A - Processing apparatus using gas and method of manufacturing the same

Info

Publication number: CN117070920A
Application number: CN202311318875.1A
Authority: CN
Inventors: 黄宗健; 康旭; 朱双双; 严大; 黎微明
Original assignee: Jiangsu Leadmicro Nano Technology Co Ltd
Current assignee: Jiangsu Leadmicro Nano Technology Co Ltd
Priority date: 2023-10-12
Filing date: 2023-10-12
Publication date: 2023-11-17

Abstract

The application relates to a processing device using gas and a manufacturing method thereof, comprising a bearing main body, a carrier, an air inlet system, a heating element and a protective layer, wherein the bearing main body comprises a processing cavity, the bearing main body comprises a metal furnace tube, the processing cavity is formed inside the metal furnace tube, the metal furnace tube comprises a plurality of sections, the metal furnace tube is detachably connected along the axial direction of the metal furnace tube, the carrier is arranged in the processing cavity and is used for bearing a substrate, the air inlet system is communicated with the processing cavity and is used for introducing processing gas into the processing cavity, the heating element is communicated with the processing cavity, the heating element is used for heating the processing cavity, the protective layer is arranged on the bearing main body and/or the carrier and is used for isolating the bearing main body from the processing gas and/or isolating the carrier from the processing gas, the protective layer comprises a high-temperature-resistant anti-corrosion layer, and the high-temperature-resistant anti-corrosion layer comprises one or more materials of silicon dioxide, titanium oxide, aluminum oxide, zirconium oxide and yttrium oxide. The high-temperature-resistant anti-corrosion layer can enhance corrosion resistance and bear stress, and avoid the stress from damaging the bearing main body and the carrier.

Description

Processing apparatus using gas and method of manufacturing the same

Technical Field

The application relates to the technical field of semiconductor processing equipment, in particular to processing equipment using gas and a manufacturing method thereof.

Background

High-efficiency crystalline silicon batteries are an important development trend of the photovoltaic industry. In order to maximize the photoelectric conversion efficiency of the crystalline silicon cell (TOPCON) of solar energy, the surface passivation process of the crystalline silicon cell is one of the necessary means for efficient cell fabrication. And are continually improving and increasing as battery production technology is further improved.

The LPCVD process technology is a core process technology of TOPCON, and is based on the principle of gas phase reaction, and a process gas is introduced into the surface of a substrate in a process chamber to deposit a thin film on the surface of the substrate.

In the process of processing the substrate in the processing equipment, the substrate needs to be fixed on a set carrier, and when the substrate is ventilated to process the substrate, gas is deposited on the inner wall of the carrier and/or the processing cavity to form accumulation, so that the carrier or the processing cavity wall is easy to crack along with the increase of the deposition thickness, and the service life of the processing equipment is reduced.

Disclosure of Invention

Based on the problems that the service life is influenced by easy cracking of treatment equipment, the application provides equipment and a manufacturing method of the equipment, wherein the equipment has the technical effects of good stabilizing effect and difficult cracking.

An apparatus, comprising:

the bearing main body comprises a processing cavity, the bearing main body comprises a metal furnace tube, the processing cavity is formed inside the metal furnace tube, the metal furnace tube comprises a plurality of sections, and the sections of the metal furnace tube are detachably connected along the axial direction of the metal furnace tube;

the carrier is arranged in the processing cavity and is used for carrying the substrate;

the air inlet system is communicated with the processing cavity and is used for introducing processing gas into the processing cavity;

the heating piece is communicated with the processing cavity and is used for heating the processing cavity;

and the protective layer is arranged on the surface of the bearing main body and/or the carrier and is used for isolating the bearing main body from the processing gas and/or isolating the carrier from the processing gas, and comprises a high-temperature-resistant anti-corrosion layer which is composed of one or more materials of silicon dioxide, titanium oxide, aluminum oxide, zirconium oxide and yttrium oxide.

In one embodiment, the protective layer is disposed on the inner wall of the processing chamber and/or the outer surface of the carrier;

the protective layer further comprises a transition layer, wherein the transition layer is arranged between the inner wall of the processing cavity and the high-temperature-resistant anti-corrosion layer and/or between the carrier and the high-temperature-resistant anti-corrosion layer;

the thermal expansion coefficient of the transition layer is between the thermal expansion coefficient of the bearing main body and the thermal expansion coefficient of the high-temperature-resistant anti-corrosion layer, and/or the thermal expansion coefficient of the transition layer is between the thermal expansion coefficient of the carrier and the thermal expansion coefficient of the high-temperature-resistant anti-corrosion layer.

In one embodiment, the bearing body is a metal piece, the metal piece includes the processing chamber, and the protective layer is disposed on an inner wall of the metal piece facing the processing chamber.

In one embodiment, the bearing body includes a liner, the liner includes an outer shell and an inner shell, the outer shell and the inner shell are both the metal pieces, and the inner shell is disposed inside the outer shell and forms the processing chamber inside the inner shell; the protective layer is arranged on the inner wall of the inner shell facing the processing cavity.

In one embodiment, the inner wall of the outer housing forms a first heat reflective layer.

In one embodiment, the inner housing is detachably connected to the outer housing.

In one embodiment, the inner housing has a rectangular cross section.

In one embodiment, the outer shell is provided with an insulating layer.

In one embodiment, the apparatus further comprises a shower plate, the opening of the inner housing being on the same side as the opening of the outer housing, and a closure door for selectively closing the opening of the outer housing;

the air inlet system is communicated with the spraying plate, and when the sealing door is closed to the opening of the outer shell, the spraying plate is closed to the opening of the inner shell and sprays air into the processing cavity in the inner shell.

In one embodiment, the apparatus further comprises a second heat reflective layer disposed on a side of the enclosure door facing the process chamber.

In one embodiment, the inner housing has a trailing end opposite the opening, and further comprising a gas make-up tube that vents through the inner housing to the trailing end.

In one embodiment, the outside of the metal furnace tube is provided with reinforcing ribs.

In one embodiment, the reinforcing ribs are distributed along the axial direction and the radial direction of the metal furnace tube, and the thickness of the reinforcing ribs in the axial direction is larger than that of the reinforcing ribs in the radial direction.

In one embodiment, the furnace further comprises a furnace mouth sealing plate and a furnace tail sealing plate, wherein the furnace mouth sealing plate and the furnace tail sealing plate are arranged at two ends of the metal furnace tube;

the furnace mouth sealing plate and/or the furnace tail sealing plate are/is provided with a water cooling groove for introducing cold water.

In one embodiment, the carrier includes a plurality of parallel metal brackets, all of which are surrounded to form a bearing position, and the substrate is arranged at the bearing position and is abutted against each metal bracket;

the outer surface of each metal bracket is provided with the protective layer.

In one embodiment, each metal bracket is provided with a limiting groove, and the limiting grooves of a plurality of metal brackets are oppositely arranged;

the limit groove is embedded in the outer edge of the substrate.

In one embodiment, along the longitudinal extension direction of the metal brackets, a plurality of limiting grooves are formed in each metal bracket.

In one embodiment, the bearing body further comprises an upper cover plate and a lower cover plate, and the upper cover plate and the lower cover plate are arranged on two longitudinal sides of the metal bracket.

In one embodiment, the bearing body further comprises a lifting lug, wherein the lifting lug is arranged on the metal bracket, and a lifting position is formed on the lifting lug.

In one embodiment, the apparatus has an in situ generation state and an in situ removal state;

generating the protective layer in the equipment in the in-situ generation state;

in the in situ removal state, the protective layer is removed from the apparatus;

the apparatus is configured to be switchable from the in situ generation state to the in situ removal state under set conditions.

According to another aspect of the present application, there is also provided a method of manufacturing a processing apparatus using a gas, including the steps of:

in one embodiment, a carrier body is provided having a process chamber with a carrier for carrying a substrate therein and for containing a process gas;

forming a protective layer on the carrier body and/or the carrier to isolate the carrier body from the process gas and/or to isolate the carrier from the process gas;

the protective layer comprises a high-temperature-resistant anti-corrosion layer, and the high-temperature-resistant anti-corrosion layer is composed of one or more materials of silicon dioxide, titanium oxide, aluminum oxide, zirconium oxide and yttrium oxide.

In one embodiment, the step of forming a protective layer on the carrier body and/or the carrier specifically includes:

a transition layer is arranged on the inner wall of the processing cavity and/or the outer surface of the carrier;

and arranging the high-temperature-resistant anti-corrosion layer on the transition layer, wherein the thermal expansion coefficient of the transition layer is between the thermal expansion coefficient of the bearing main body and the thermal expansion coefficient of the high-temperature-resistant anti-corrosion layer, and/or the thermal expansion coefficient of the transition layer is between the thermal expansion coefficient of the carrier and the thermal expansion coefficient of the high-temperature-resistant anti-corrosion layer.

In one embodiment, the method of manufacturing a processing apparatus using a gas further includes:

the apparatus is placed under set conditions to remove the protective layer.

The equipment is used for bearing the substrate and providing the place required by the processing reaction process of the substrate, and the protective layer is arranged in the processing cavity to isolate the bearing main body from the processing gas and/or isolate the carrier from the processing gas, so that the high-temperature-resistant anti-corrosion layer of the protective layer not only can enhance the corrosion resistance, but also is used for bearing main stress, and the situation that the carrier and/or the bearing main body are damaged due to the fact that the stress directly acts on the carrier and/or the bearing main body is avoided, thereby improving the stability of the carrier and/or the bearing main body and prolonging the service life of the equipment.

Drawings

FIG. 1 is a schematic illustration of the structure of a protective layer of an apparatus provided in accordance with one or more embodiments;

FIG. 2 is a schematic view of the structure of a first embodiment of the apparatus provided in FIG. 1;

FIG. 3 is a schematic view of a partial cross-sectional structure of the apparatus provided in FIG. 2;

FIG. 4 is a schematic view of a partial cross-sectional structure of the apparatus provided in FIG. 1;

FIG. 5 is a schematic view of a partial structure of the apparatus provided in FIG. 1;

FIG. 6 is a schematic perspective view of a carrier provided in accordance with one or more embodiments;

FIG. 7 is a schematic plan view of the carrier provided in FIG. 6;

FIG. 8 is an enlarged view of a portion of FIG. 6;

FIG. 9 is a flow diagram first of a device manufacturing method in accordance with one or more embodiments;

FIG. 10 is a second flow diagram of a device manufacturing method in accordance with one or more embodiments;

FIG. 11 is a flow diagram three of a device manufacturing method in accordance with one or more embodiments.

Reference numerals: 100. an apparatus; 10. a carrying body; 11. a processing chamber; 12. A lining; 121. an inner housing; 122. an outer housing; 1221. a heat preservation layer; 1222. an air inlet; 1224. Closing the door; 20. a carrier; 21. a bearing position; 22. a metal bracket; 221. a limit groove; 23. an upper cover plate; 24. a lower cover plate; 25. lifting lugs; 30. a protective layer; 31. a high temperature resistant corrosion resistant layer; 32. a transition layer; 40. a spray plate; 51. a first heat reflecting layer; 52. a second heat reflecting layer; 60. a heating member; 70. a seal ring; 80. a cavity tail flange; 300. a substrate.

Detailed Description

In order that the above objects, features and advantages of the application will be readily understood, a more particular description of the application will be rendered by reference to the appended drawings. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present application. The present application may be embodied in many other forms than described herein and similarly modified by those skilled in the art without departing from the spirit of the application, whereby the application is not limited to the specific embodiments disclosed below.

In the description of the present application, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential L", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings are merely for convenience in describing the present application and simplifying the description, and do not indicate or imply that the device or element being referred to must have a specific orientation, be configured and operated in a specific orientation, and therefore should not be construed as limiting the present application.

Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include at least one such feature. In the description of the present application, the meaning of "plurality" means at least two, for example, two, three, etc., unless specifically defined otherwise.

In the present application, unless explicitly specified and limited otherwise, the terms "mounted," "connected," "secured," and the like are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; either directly or indirectly, through intermediaries, or both, may be in communication with each other or in interaction with each other, unless expressly defined otherwise. The specific meaning of the above terms in the present application can be understood by those of ordinary skill in the art according to the specific circumstances.

In the present application, unless expressly stated or limited otherwise, a first feature "up" or "down" a second feature may be the first and second features in direct contact, or the first and second features in indirect contact via an intervening medium. Moreover, a first feature being "above," "over" and "on" a second feature may be a first feature being directly above or obliquely above the second feature, or simply indicating that the first feature is level higher than the second feature. The first feature being "under", "below" and "beneath" the second feature may be the first feature being directly under or obliquely below the second feature, or simply indicating that the first feature is less level than the second feature.

It will be understood that when an element is referred to as being "fixed" or "disposed" on another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. The terms "vertical," "horizontal," "upper," "lower," "left," "right," and the like are used herein for illustrative purposes only and are not meant to be the only embodiment.

As background art, generally, quartz structures are currently used in the market for substrate processing equipment, and a process gas is deposited on the quartz structures at the same time as a substrate surface deposition process. As the expansion coefficients of the processing gas and the Dan Yingre are greatly different, as the deposition thickness of the processing gas on the quartz structure is increased, the quartz structure is subjected to great difference in thermal expansion, so that the surface of the quartz structure is subjected to excessive stress and is easy to crack. The application provides equipment for bearing a substrate and providing a substrate processing environment, and the equipment is protected during processing, so that the cracking phenomenon of the equipment caused by sedimentation and accumulation of processing gas on the equipment is avoided. The substrate of the device provided by the embodiment of the application can be, but is not limited to, a silicon wafer, a wafer and the like.

Referring to fig. 1 to 3, the present application provides a processing apparatus 100 using a gas, including a carrier body 10, a carrier 20, an air inlet system, a heating element 60 and a protection layer 30, where the carrier body 10 includes a processing chamber 11, the carrier 20 is disposed in the processing chamber 11 and is used for carrying a substrate 300, the air inlet system is communicated with the processing chamber 11 and is used for introducing the processing gas into the processing chamber 11, the heating element 60 is communicated with the processing chamber 11, the heating element 60 is used for heating the processing chamber 11, the protection layer 30 is disposed on the carrier body 10 and/or the carrier 20 and is used for isolating the carrier body 10 from the processing gas and/or isolating the carrier 20 from the processing gas, the protection layer 30 includes a high temperature resistant anti-corrosion layer 31, and the high temperature resistant anti-corrosion layer 31 is made of one or more materials of silicon dioxide, titanium oxide, aluminum oxide, zirconium oxide and yttrium oxide.

The carrier 20 may take any configuration, and its primary purpose is to carry the substrate 300 and provide stable support of the substrate 300 during the deposition process. However, during the deposition process of the substrate 300, the process gas may be deposited not only on the substrate 300 but also on the carrier 20 for supporting the substrate 300 and/or on the carrier body 10 for carrying the carrier 20.

In order to avoid this situation, the present application provides the high temperature resistant and corrosion resistant layer 31, which isolates the bearing body 10 from the process gas and/or the bearing body 10 from the process gas, and the formation of the high temperature resistant and corrosion resistant layer 31 not only can enhance the corrosion resistance, but also can be used for bearing the main stress, so as to avoid the situation that the stress directly acts on the bearing body 10 and/or the carrier 20 to cause the damage of the bearing body 10 and/or the carrier 20, thereby improving the stability of the apparatus 100, and avoiding the damage thereof to prolong the service life.

Specifically, the high temperature resistant anticorrosive layer 31 includes a mixed nano paint composed of silica, titania, alumina, zirconia, yttria and other high temperature resistant ceramic paint according to different proportions, the proportion may be 20% of each paint, 21% of silica, 25% of titania, 30% of alumina, 14% of zirconia, 10% of yttria, 23% of silica, 15% of titania, 38% of alumina, 24% of zirconia, or any other proportion, and the thickness of the coating may be 20-60 um. The coating method can be brushing, spraying, CVD deposition, ALD deposition, PVD deposition, and the like. And after the coating is finished, the high-temperature resistant and corrosion-resistant layer 31 is firmly combined by high-temperature curing at 200-600 ℃.

In one embodiment, the apparatus 100 has an in-situ generation state in which the shield layer 30 is generated within the apparatus 100, and an in-situ removal state in which the shield layer 30 is removed from within the apparatus 100, the apparatus 100 being configured to be switchable from the in-situ generation state to the in-situ removal state under set conditions.

Specifically, when the substrate 300 needs to be processed, the apparatus 100 may be first operated to switch to an in-situ generation state, the protective layer 30 is formed on the carrier 20 and/or the carrier body 10, and then the processing gas is introduced to process the substrate 300, and at the same time, the carrier 20 and/or the carrier body 10 is protected. After the substrate 300 is processed, the apparatus 100 may be placed in a set environment, such as by introducing a specific gas into the shield layer 30, and the specific gas reacts with the components of the shield layer 30 to remove them, thereby switching to an in-situ removal state, and recovering the apparatus 100.

In one embodiment, the processing chamber 11 is formed in the carrying body 10, the carrier 20 is disposed in the processing chamber 11 to directly carry the substrate 300, and the protective layer 30 may be disposed on an inner wall of the processing chamber 11 and/or on an outer surface of the carrier 20, so that dust accumulation can be reduced to affect the processing effect of the substrate 300, and high temperature stress can be borne to avoid the processing gas accumulation on the inner surface to damage the carrying body 10 and the carrier 20.

Referring to fig. 1 to 3, in one embodiment, the protection layer 30 further includes a transition layer 32, where the transition layer 32 is disposed between the inner wall of the processing chamber 11 and the high temperature resistant and corrosion resistant layer 31, and/or between the carrier 20 and the high temperature resistant and corrosion resistant layer 31, and the thermal expansion coefficient of the transition layer 32 is between the thermal expansion coefficient of the carrier 10 and the thermal expansion coefficient of the high temperature resistant and corrosion resistant layer 31, and/or the thermal expansion coefficient of the transition layer 32 is between the thermal expansion coefficient of the carrier 20 and the thermal expansion coefficient of the high temperature resistant and corrosion resistant layer 31.

Before the high-temperature-resistant anti-corrosion layer 31 is coated, a transition layer 32 is coated on the bearing main body 10 and/or the carrier 20, the thermal expansion coefficient of the transition layer 32 is between the materials of the bearing main body 10 and/or the carrier 20 and the outermost high-temperature-resistant anti-corrosion layer 31, and the high-temperature-resistant anti-corrosion layer 31 is prevented from falling off due to the fact that the expansion amount of the bearing main body 10 and/or the carrier 20 is different from that of the high-temperature-resistant anti-corrosion layer 31 after the temperature of the bearing main body 10 and/or the carrier 20 is high, so that the transition layer 32 can reduce the risk of falling off of the high-temperature-resistant anti-corrosion layer 31 caused by thermal expansion stress.

When the inner wall of the processing chamber 11 and/or the outer surface of the carrier 20 has a surface structure, sand blasting treatment can be performed on the surface in advance, and the roughness of the sand blasted surface is Ra 2.5-Ra 16, so as to increase the adhesion of the coating, and make the coating bond more firm. After the sand blasting, the surface is cleaned to remove sand blasting impurity particles, the transition layer 32 is coated after the cleaning water is air-dried, the thickness of the coating can be 20-60 um, the coating mode can be brushing, spraying, CVD deposition, ALD deposition or PVD deposition, and the like, and after the transition layer 32 is coated, the high-temperature-resistant anti-corrosion layer 31 is coated on the surface of the transition layer 32.

It will be appreciated that both the high temperature resistant corrosion preventing layer 31 and the transition layer 32 may be formed in the in-situ formed state, and both the high temperature resistant corrosion preventing layer 31 and the transition layer 32 may be removed in the in-situ removed state.

First embodiment:

in one embodiment, referring to fig. 2 to 5, the carrying body 10 is a metal piece, the metal piece includes a processing chamber 11, a high temperature resistant and corrosion resistant layer 31 is coated on an inner wall of the metal piece facing the processing chamber 11, the metal piece has higher strength and can bear stronger stress than other materials such as quartz pieces, and the metal material for preparing the carrying body 10 needs to be resistant to high temperature and has small thermal deformation and thermal expansion coefficient. The material can be titanium alloy, valve alloy, invar alloy and other high temperature resistant materials. The metal material has high strength, and avoids the problem of frequent chipping of the carrier body 10.

Meanwhile, a high temperature resistant and corrosion resistant layer 31 is required to be arranged on the surface of the metal piece, and various special corrosive treatment gases are introduced when the substrate 300 on the carrier 20 is treated, so that the high temperature resistant and corrosion resistant performance of the bearing main body 10 is further improved, and the high temperature resistant and corrosion resistant layer 31, such as ceramic paint, is required to be coated on the surface of the bearing main body 10 facing the treatment cavity 11, so that the bearing main body is firm, is not easy to fall off, and has long service life.

The formation of the high temperature resistant and corrosion resistant layer 31 on the metal part can not only enhance the corrosion resistance of the bearing body 10, but also avoid the film layer and dust particles formed by directly depositing the treatment gas on the bearing body 10 during the treatment process, and the falling-off of the film layer and the dust particles can pollute the substrate 300 during the treatment, thereby reducing the yield and the efficiency of the finished product.

In general, the metal can bear a high temperature of 450 °, and the high temperature resistance of the bearing body 10 can be improved to 750 ° or more after the high temperature resistant and corrosion resistant layer 31 is provided. To improve the high temperature bearing capacity of the carrier body 10.

In one embodiment, the carrier body 10 further includes a liner 12, the liner 12 includes an outer shell 122 and an inner shell 121, the outer shell 122 and the inner shell 121 are all metal pieces, the inner shell 121 is disposed inside the outer shell 122 and forms a processing chamber 11 inside the inner shell, the protective layer 30 is disposed on an inner wall of the inner shell 121 facing the processing chamber 11, so that a processing reaction area of the substrate 300 is formed inside the inner shell 121, and the protective layer 30 protects the inner shell 121.

In one embodiment, when the substrate 300 forms a processing reaction inside the inner housing 121, the heating element 60 heats the processing chamber 11, the inner wall of the outer housing 122 facing the inner housing 121 forms the first heat reflection layer 51, and the first heat reflection layer 51 is used for reflecting the heat generated by the heating element 60, preventing the heat dissipation of the heating element 60, reducing the energy consumption, and reducing the temperature of the inner wall of the outer housing 122.

Specifically, the first heat reflecting layer 51 may be a heat reflecting plate or a reflecting coating layer, and the present application is not limited thereto.

In one embodiment, the apparatus 100 further comprises a closing door 1224 and a shower plate 40, the opening of the inner housing 121 being on the same side as the opening of the outer housing 122, the closing door 1224 being configured to selectively close the opening of the outer housing 122, wherein the shower plate 40 is disposed on the closing door 1224, the shower plate 40 closing the opening of the inner housing 121 and spraying gas into the process chamber 11 within the inner housing 121 when the closing door 1224 closes the opening of the outer housing 122.

The outer housing 122 has a closure door 1224 and a cavity end flange 80 at each end and is sealed with a seal ring 70. A second heat reflective layer 52 is provided on the inside of the closing door 1224 and on the inside of the cavity tail flange 80 to reduce the likelihood of heat loss from the closing door 1224 and the cavity tail flange 80. The shower plate 40 is used to uniformly spray the process gas required for the process into the process chamber 11 to improve flow field uniformity. The process gases in the shower plate 40 are admitted from inlets 1222. There may be 2 to 8 inlets 1222.

Further, the inlets 1222 may be arranged in a plurality of rows for different kinds of process gases to enter the process chamber 11 simultaneously. The process gas introduced from the gas inlet 1222 into the process chamber 11 is sprayed from the opening side of the outer housing 122 by the shower plate 40, and as the process of the front and middle substrates 300 in the process chamber 11 is consumed, the process gas is reduced to the rear end of the inner housing 121, thereby resulting in reduced uniformity of the process gas at the rear end of the process chamber 11.

To solve this problem, the processing apparatus 100 using the gas further includes a gas supply pipe which is ventilated to the rear end through the inner housing 121 to supply the consumed process gas, improving the uniformity of the process atmosphere inside the process chamber 11.

Further, the air supply pipe is provided with a plurality of air supply holes, the diameters of the air supply holes can be consistent, and the diameters of the air supply holes can be inconsistent, so that air supply can be performed at a plurality of positions of the processing cavity 11 at the same time, and the uniformity of the processing gas in the processing cavity 11 is further improved. In addition, a plurality of air supplementing pipes can be arranged in the processing cavity 11 in a surrounding mode, and the process atmosphere uniformity and the substrate 300 processing uniformity are further improved.

Further, the outer shell 122 and the inner shell 121 are made of high-temperature-resistant and corrosion-resistant metal, so that the reliability and stability of the liner 12 are improved, and the outer shell 122 and the inner shell 121 can be made of 304, 304L, 316L, 310S and other materials. The heat insulation layer 1221 is arranged on the outer shell 122, the heat insulation layer 1221 is made of a heat insulation material with low high temperature resistance and heat conductivity coefficient, such as an aluminum silicate fiber blanket, glass fiber cotton, a Morgan plug blanket and the like, and the heat insulation layer 1221 can prevent heat dissipation, reduce energy consumption and reduce the temperature of the outer shell 122.

In one embodiment, the outer housing 122 is detachably connected with the inner housing 121 to form the independence of the processing chamber 11, so that the inner housing 121 can be disassembled and cleaned during maintenance of the apparatus 100, the processing environment is cleaner, the processing efficiency is improved, and the inner housing 121 can be independently disassembled to perform in-situ generation and in-situ removal.

In one embodiment, a plurality of substrates 300 may be placed on the carrier 20, and then the carrier 20 is placed in the processing chamber 11 to process the plurality of substrates 300 at a time, and the inner housing 121 may be rectangular, so that the cross section of the inner housing 121 forms a rectangular surface to adapt to the size of the square substrate 300, thereby increasing the utilization rate of the chamber space of the processing chamber 11 and facilitating the placement of the carrier 20. The outer housing 122 may be rectangular or circular. A sealed vacuum space is formed in the outer case 122 and is subjected to atmospheric pressure when in vacuum.

In one embodiment, the first heat reflection layer 51 may be disposed at one side and the tail end of the opening of the processing chamber 11, and the first heat reflection layer 51 may reflect heat energy back into the processing chamber 11, so as to reduce heat dissipation, improve temperature uniformity, improve processing uniformity, and reduce energy consumption.

Furthermore, when the first heat reflecting layer 51 is a multi-layer reflecting plate structure, air holes can be formed in the first heat reflecting layer 51, and the positions of the air holes on adjacent reflecting plates are staggered, so that the air distribution effect on the processing gas entering the processing chamber 11 through the air inlet holes by the air inlet system can be achieved, the uniformity of the processing atmosphere of the processing chamber 11 is improved, and the processing uniformity is improved.

Specifically, an auxiliary heater may be mounted on the first heat reflecting layer 51, so that heat dissipation can be prevented, heat can be supplemented, and temperature uniformity of one end and the tail end of the opening can be improved. The heater may be of any temperature uniform shape, such as a planar circular spiral, a planar rectangular loop, etc.

Second embodiment:

in one embodiment, the carrying body 10 includes a metal furnace tube, the inside of the metal furnace tube forms a processing cavity 11, and the outside of the metal furnace tube is provided with reinforcing ribs, so that the strength of the metal furnace tube is further enhanced, and deformation of the metal furnace tube after heating is avoided.

Specifically, because the axial length of the metal furnace tube is large, the axial bearing force is larger than the radial bearing force, so that the thicknesses of the axial reinforcing ribs and the reinforcing ribs at the two ends in the axial direction are larger than those of the reinforcing ribs in the radial direction, and the deformation of the metal furnace tube is avoided.

Further, the metal furnace tube adopts end face sealing, and the furnace mouth sealing plate and the furnace tail sealing plate are respectively provided with a rubber ring groove, and the rubber rings are arranged in the rubber ring grooves, so that the sealing effect is achieved, the number of the rubber rings is reduced, the cost is reduced, meanwhile, the sealing places are reduced, only the sealing ends are required, and the sealing performance of the system is improved.

In one embodiment, the treatment device 100 using gas further includes a furnace mouth sealing plate and a furnace tail sealing plate, wherein the furnace mouth sealing plate and the furnace tail sealing plate are arranged at two ends of the metal furnace tube, the furnace mouth sealing plate and/or the furnace tail sealing plate are provided with a water cooling tank for introducing cold water, the cold water in the water cooling tank plays a role in cooling the rubber ring, and the service life of the rubber ring is prolonged.

In one embodiment, the heating member 60 includes a heating furnace tube, and the heating furnace tube is sleeved outside the metal furnace tube to heat the metal furnace tube and the processing chamber 11 inside the metal furnace tube. The metal furnace tube comprises a plurality of sections, and the sections of the metal furnace tube can be detachably connected along the axial direction of the metal furnace tube, so that the bearing main bodies 10 with various lengths are formed. A bracket can also be arranged on the periphery of each metal furnace tube to fix the metal furnace tube and the heating furnace tube.

Specifically, in order to facilitate the assembly of the metal furnace tube, the heating furnace tube may be provided in multiple sections, so as to improve the installation efficiency.

Third embodiment:

in one embodiment, referring to fig. 6 to 8, the carrier 20 includes a plurality of metal supports 22 disposed in parallel, a carrying position 21 is defined between the metal supports 22, the substrate 300 is disposed on the carrying position 21 and abuts against each metal support 22, and a protective layer 30 is disposed on an outer surface of each metal support 22.

Specifically, the substrate 300 is clamped between the plurality of metal brackets 22, and at this time, the side surfaces of the substrate 300 are abutted against the plurality of metal brackets 22, and the upper and lower surfaces of the substrate 300 are exposed, so that the processing can be performed simultaneously.

The carrier 20 is made of a metal material, avoids the conventional quartz, has the advantages of high temperature resistance, small thermal deformation and thermal expansion coefficient, high strength and good stability, and avoids the problem of frequent fragmentation of the carrier 20 of the quartz. The metal material can be titanium alloy, valve alloy, invar alloy and other high temperature resistant materials.

In one embodiment, each metal bracket 22 has a limiting groove 221, the limiting grooves 221 of the metal brackets 22 are disposed opposite to each other, the limiting grooves 221 are embedded in the outer edge of the substrate 300, and the limiting grooves 221 of the metal brackets 22 are embedded in different positions of the outer edge of the substrate 300, so as to stably clamp the substrate 300 on the carrying position 21.

Along the longitudinal extending direction of the metal brackets 22, a plurality of limiting grooves 221 are formed in each metal bracket 22, and the plurality of limiting grooves 221 can simultaneously clamp and mount a plurality of substrates 300, and each two substrates 300 are arranged at intervals, so that the plurality of substrates 300 are simultaneously processed.

Further, an upper cover plate 23 and a lower cover plate 24 are disposed at two longitudinal ends of the metal support 22, the carrier 20 further comprises lifting lugs 25, the lifting lugs 25 are disposed on the metal support 22, and lifting positions are formed on the lifting lugs 25 so as to facilitate transfer of the carrier 20.

The upper cover plate 23, the lower cover plate 24 and the lifting lug 25 may be movably fastened to the metal bracket 22 by screws or integrally connected by welding, which is not limited herein.

According to another aspect of the present application, there is also provided a method of manufacturing a processing apparatus using a gas, referring to fig. 9, specifically including the steps of:

s10, providing a bearing main body 10 with a processing cavity 11, wherein a carrier 20 for bearing a substrate 300 is arranged in the processing cavity 11, and the processing cavity 11 is used for containing processing gas;

s20, a protective layer 30 is formed on the carrier body 10 and/or the carrier 20 to isolate the carrier body 10 from the process gas and/or to isolate the carrier 20 from the process gas.

The protective layer 30 includes a high temperature resistant and corrosion resistant layer 31, and the high temperature resistant and corrosion resistant layer 31 is made of one or more materials selected from silicon dioxide, titanium oxide, aluminum oxide, zirconium oxide and yttrium oxide.

In this way, in the device manufacturing method provided by the application, the bearing main body 10 and/or the carrier 20 are isolated from the processing gas, and the high-temperature-resistant anti-corrosion layer 31 is formed to enhance the corrosion resistance and bear the stress, so that the situation that the bearing main body 10 and/or the carrier 20 is damaged due to the fact that the stress directly acts on the bearing main body 10 and/or the carrier 20 is avoided, and the service life of the device 100 is prolonged.

In one embodiment, referring to fig. 10, forming the protective layer 30 on the carrier body 10 and/or the carrier 20 specifically includes the following steps:

s21, arranging a transition layer 32 on the inner wall of the processing cavity 11 and/or the outer surface of the carrier 20;

s22, disposing a high temperature resistant and corrosion resistant layer 31 on the transition layer 32, wherein the thermal expansion coefficient of the transition layer 32 is between the thermal expansion coefficient of the carrier body 10 and the thermal expansion coefficient of the high temperature resistant and corrosion resistant layer 31, and/or the thermal expansion coefficient of the transition layer is between the thermal expansion coefficient of the carrier and the thermal expansion coefficient of the high temperature resistant and corrosion resistant layer.

The formation of the transition layer 32 is described in detail above, please refer to the above, and the description is omitted here.

In one embodiment, referring to fig. 11, the device manufacturing method further comprises:

s30, the apparatus 100 is placed under a set condition to remove the protective layer 30.

Specifically, the apparatus 100 has an in-situ generation state in which the shield layer 30 is generated within the process chamber 11, and an in-situ removal state in which the shield layer 30 is removed from the apparatus 100, the apparatus 100 being configured to be switchable from the in-situ generation state to the in-situ removal state under set conditions.

Specifically, when the substrate 300 needs to be processed, the apparatus 100 may be first operated to switch to the in-situ generation state, the protective layer 30 is generated, and then the processing gas is introduced to process the substrate 300, and at the same time, the carrier 20 is protected. After the substrate 300 is processed and formed, the carrier 20 may be placed in a set environment, for example, a specific gas is introduced into the surface of the protective layer 30, and the specific gas reacts with the components of the protective layer 30 to remove the components, so that the in-situ removal state is switched, and the original state of the apparatus 100 is restored.

The technical features of the above embodiments may be arbitrarily combined, and all possible combinations of the technical features in the above embodiments are not described for brevity of description, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.

The foregoing examples illustrate only a few embodiments of the application, which are described in detail and are not to be construed as limiting the scope of the claims. It should be noted that it will be apparent to those skilled in the art that several variations and modifications can be made without departing from the spirit of the application, which are all within the scope of the application. Accordingly, the scope of protection of the present application is to be determined by the appended claims.

Claims

1. A processing apparatus using a gas, comprising:

and the protective layer is arranged on the bearing main body and/or the carrier and is used for isolating the bearing main body from the processing gas and/or isolating the carrier from the processing gas, and comprises a high-temperature-resistant anti-corrosion layer which is composed of one or more materials of silicon dioxide, titanium oxide, aluminum oxide, zirconium oxide and yttrium oxide.

2. The gas-using processing apparatus of claim 1, wherein the shield layer is provided on the inner wall of the processing chamber and/or the outer surface of the carrier;

3. A gas-using treatment apparatus according to claim 2, wherein the carrier body is a metal member including the treatment chamber, and the protective layer is provided on an inner wall of the metal member facing the treatment chamber.

4. A gas-using treatment apparatus according to claim 3, wherein the carrier body comprises a liner including an outer shell and an inner shell, both of which are the metal pieces, the inner shell being disposed inside the outer shell and forming the treatment chamber therein;

the protective layer is arranged on the inner wall of the inner shell facing the processing cavity.

5. The gas-using processing apparatus according to claim 4, wherein the inner wall of the outer case forms a first heat reflecting layer.

6. The gas-using treatment apparatus according to claim 4, wherein the inner housing is detachably connected to the outer housing.

7. The gas-using treatment apparatus according to claim 4, wherein the cross section of the inner housing is a rectangular face.

8. The gas-using treatment apparatus according to claim 4, wherein the outer case is provided with a heat-insulating layer.

9. The gas-using treatment apparatus according to claim 4, further comprising a shower plate and a closing door, the opening of the inner housing being on the same side as the opening of the outer housing, the closing door being for selectively closing the opening of the outer housing;

the air inlet system is communicated with the spraying plate, and when the sealing door is closed to the opening of the outer shell, the spraying plate is closed to the opening of the inner shell and sprays treatment gas into the treatment cavity in the inner shell.

10. The gas-using processing apparatus of claim 9, further comprising a second heat reflective layer disposed on a side of the enclosure door facing the process chamber.

11. The gas-using treatment apparatus according to claim 9, wherein the inner housing has a trailing end opposite to its own opening, the treatment apparatus further comprising a make-up tube that vents through the inner housing to the trailing end.

12. The gas-using treatment apparatus according to claim 2, wherein the metal furnace tube is provided with reinforcing ribs on the outside.

13. The gas-using treatment apparatus according to claim 12, wherein the reinforcing ribs are distributed in an axial direction and a radial direction of the metal furnace tube, and a thickness of the reinforcing ribs in the axial direction is larger than a thickness of the reinforcing ribs in the radial direction.

14. The gas-using treatment apparatus according to claim 2, further comprising a furnace mouth seal plate and a furnace tail seal plate provided at both ends of the metal furnace tube;

15. The gas-using processing apparatus according to claim 2, wherein the carrier includes a plurality of metal brackets arranged in parallel, all of the metal brackets are surrounded to form a carrying position, and the substrate is provided at the carrying position and abuts against each of the metal brackets;

the outer surface of each metal bracket is provided with the protective layer.

16. The gas-using treatment apparatus according to claim 15, wherein each of the metal brackets has a limit groove, the limit grooves of a plurality of the metal brackets being disposed opposite to each other;

the limit groove is embedded in the outer edge of the substrate.

17. A gas-using treatment apparatus according to claim 16, wherein a plurality of the limit grooves are provided on each of the metal brackets in a longitudinal extending direction of the metal brackets.

18. The gas-using processing apparatus of claim 15, wherein the carrier body further comprises an upper cover plate and a lower cover plate, the upper cover plate and the lower cover plate being disposed on both longitudinal sides of the metal bracket.

19. The gas-using treatment apparatus of claim 18, wherein the carrier body further comprises lifting lugs, the lifting lugs being provided on a metal bracket;

the lifting lug is formed with a lifting position.

20. The gas-using processing apparatus of any one of claims 1-19, wherein the processing apparatus has an in situ generation state and an in situ removal state;

generating the protective layer in the processing equipment in the in-situ generation state;

in the in situ removal state, the protective layer is removed from the processing equipment;

the process apparatus is configured to be switchable from the in-situ generation state to the in-situ removal state under set conditions.

21. A method of manufacturing a processing apparatus using a gas, comprising the steps of:

providing a bearing main body with a processing cavity, wherein the bearing main body comprises a metal furnace tube, the processing cavity is formed in the metal furnace tube, the metal furnace tube comprises a plurality of sections, the sections of the metal furnace tube are detachably connected along the axial direction of the metal furnace tube, a carrier for bearing a substrate is arranged in the processing cavity, and the processing cavity is used for accommodating processing gas;

22. The method of manufacturing a gas-using processing apparatus according to claim 21, wherein the step of forming a protective layer on the carrier body and/or the carrier comprises:

23. The method of manufacturing a gas-using processing apparatus according to claim 22, characterized in that the apparatus manufacturing method further comprises:

the apparatus is placed under set conditions to remove the protective layer.