CN105925960A - Atomic layer deposition-based vacuum coating device for solar cell production - Google Patents
Atomic layer deposition-based vacuum coating device for solar cell production Download PDFInfo
- Publication number
- CN105925960A CN105925960A CN201610397181.5A CN201610397181A CN105925960A CN 105925960 A CN105925960 A CN 105925960A CN 201610397181 A CN201610397181 A CN 201610397181A CN 105925960 A CN105925960 A CN 105925960A
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- Prior art keywords
- inner chamber
- chamber body
- shower plate
- outer chamber
- solar battery
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000000231 atomic layer deposition Methods 0.000 title claims abstract description 11
- 238000001771 vacuum deposition Methods 0.000 title claims abstract 8
- 238000004519 manufacturing process Methods 0.000 title abstract description 6
- 238000000034 method Methods 0.000 claims abstract description 38
- 238000001816 cooling Methods 0.000 claims abstract description 12
- 238000010438 heat treatment Methods 0.000 claims abstract description 11
- 239000007789 gas Substances 0.000 claims description 71
- 238000009826 distribution Methods 0.000 claims description 7
- 230000000740 bleeding effect Effects 0.000 claims description 5
- 238000009413 insulation Methods 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 230000006835 compression Effects 0.000 claims 1
- 238000007906 compression Methods 0.000 claims 1
- 239000007921 spray Substances 0.000 abstract description 5
- 238000006243 chemical reaction Methods 0.000 description 15
- 239000000463 material Substances 0.000 description 14
- 239000010408 film Substances 0.000 description 13
- 238000005516 engineering process Methods 0.000 description 9
- 238000000151 deposition Methods 0.000 description 6
- 239000011261 inert gas Substances 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000005240 physical vapour deposition Methods 0.000 description 4
- 238000010923 batch production Methods 0.000 description 3
- 239000012159 carrier gas Substances 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000010926 purge Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 238000005086 pumping Methods 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
Abstract
The invention discloses an atomic layer deposition-based vacuum coating device for solar cell production. The device comprises an outer cavity, an inner cavity, a spray plate, a heating system, a cooling system, a process gas system, a tail gas treatment device and a vacuum pump, wherein the inner cavity is arranged in a support in the outer cavity, and the spray plate is arranged at the top of the inner cavity and is a top cover of the inner cavity; the heating system is arranged at the outer side of the inner cavity, the cooling system is arranged at the outer side of the outer cavity, the process gas system is connected with the inner cavity through a process gas pipeline and a pulse valve, and the inner cavity is sequentially connected with the tail gas treatment device and the vacuum pump through a vacuum pipeline; and the spray plate is fixedly connected with the inner cavity through an inner flange of the inner cavity, and fixed with an outer cavity cover through a connection shaft and a spring. Solar cells are vertically placed on bearing boats in batches, and the plurality of bearing boats are arranged in the inner cavity simultaneously; and the solar cells are parallel to a process gas flowing direction.
Description
Technical field
The present invention relates to technical field of vacuum plating, be specifically related to solar cell vacuum coater based on technique for atomic layer deposition.
Background technology
Efficiently crystal silicon battery is an important development trend of photovoltaic industry.For increasing the photoelectric transformation efficiency of crystal silicon battery to greatest extent, crystal silicon battery surface passivation technology is one of necessary means of high-efficiency battery manufacture.And along with improving further of battery production technology is being updated and improved.
Ald (Atomic layer deposition, ALD) technology is a film deposition techniques based on surface chemistry gas phase is reacted.It is by being introduced separately reaction chamber by two or more chemical gas predecessors, make each predecessor, on surface, base, the most saturated surface chemical reaction occur respectively, gas phase product reacted to saturated surface and unreacted gas purging are clean therebetween, therefore material can be plated in substrate surface with monatomic form membrane, and in the range of the thickness of the film deposited and the uniformity are accurately controlled in atomic layer level thickness.It is different from traditional film deposition techniques, such as physical vapour deposition (PVD) (Physical Vapor Deposition, PVD), chemical gaseous phase deposition (Chemical Vapor Deposition) etc., ALD can form the special performance such as high-quality, free of pinholes, conformality film at on-plane surface labyrinth and three-dimensional structure surface.Ald (ALD) technology, as one of state-of-the-art film deposition techniques, is widely used to the manufacturing industry such as the microelectronics of advanced person, display, MEMS, inductor, photovoltaic cell.For efficient crystal silicon battery, the made thin-film material of ald, such as alundum (Al2O3), silica etc. can be as field-effect passivating film, extend electronics and the binding time in hole pair by reducing crystal silicon surface defect, thus increase minority carrier life time, reach to increase photoelectric transformation efficiency.But be limited to lack effective batch production type apparatus for atomic layer deposition, this technology fails to realize the industrialization of solar battery sheet always and produces.
Summary of the invention
1, the technical problem to be solved
For in prior art, in ALD course of reaction, reacting gas mixes in air inlet pipe or gas distribution tube, chemical reaction is just there is in entering reaction cavity, and existing ALD device cannot carry out ald in high volume, entering batch production pattern, the present invention proposes a kind of apparatus for atomic layer deposition that can produce in batches.
By the Specialty Design to inner chamber body, with a narrow inner chamber body passage, and control the flow direction of atom air-flow with pumping airflow, allow more substrate be placed in this atmosphere, by the control of the amount to source, deposit one or more layers atomic layer, the method film forming is uniform, is better than CVD vapor deposition film.This device has also used shower plate technology, can effectively stop the generation of CVD film.
The present invention, by application shower plate technology, makes the problem of the inhomogeneities of reacting gas distribution in existing ALD technique have been resolved；Inner cap and the outer chamber lid of inner chamber body are link gears, and outer chamber lid is closed simultaneously, and shower plate also simultaneously closes off；Ensure that the atomic layer of inner chamber body is not leak into extraneous areas by pressure differential in interior outer chamber, pumping airflow direction can only be followed, participate in ald；This device is also equipped with exhaust gas processing device, uses multilayer filter disc, then is passed through air reaction, eliminates tail gas, generates innocuous substance.
2, technical scheme.
Vacuum apparatus for atomic layer deposition, described device includes outer chamber, inner chamber body, shower plate, heating system, cooling system, process gas system, vavuum pump and exhaust gas processing device；Inner chamber body is placed on the center of outer chamber, and centre is supported by support, and shower plate is located at inner chamber body top and simultaneously for the top cover of inner chamber body；Heating system is located at outside inner chamber body, and cooling system is located at outside outer chamber, and process gas system is connected with inner chamber body by process gas pipeline and pulse valve, and inner chamber body is connected with exhaust gas processing device, vavuum pump successively by process gas pipeline；It is characterized in that, described shower plate is fixed with outer chamber lid by connecting shaft and spring.
Outer chamber and inner chamber body are horizontal positioned, and outer chamber lid and vacuum line are arranged on the side of outer chamber, and solar battery sheet is entered inner chamber body by outer chamber lid in batches, is loaded.
Process gas system produces the gas required for ALD reacts by chemical reaction, and is fed gas in inner chamber body by the connection of process gas pipeline；The bleeding point of inner chamber body, through the flange at tail end of outer chamber, the tail end outer wall of inner chamber body and the inside-wall surface contact of the flange at tail end of outer chamber, has space, is not fully insulated between inner chamber body and outer chamber, the internal outer chamber of vavuum pump is bled simultaneously.Outer chamber is provided with adjustable gas flow measuring unit, by adjusting inner chamber body and outer chamber contact surface gap and interior outer chamber gas flow, can control the pressure differential of inside and outside cavity, and make outer chamber pressure more than inner chamber body pressure.
Vavuum pump can internally be bled by outer chamber simultaneously, and interior outer chamber reaches pressure balance by injecting appropriate inert gas, meets technological requirement.Reach, with the regulation of technique nitrogen, the pressure that interior outer chamber is different, it is ensured that the air-flow of interior reaction chamber and the flow direction are stable by vavuum pump.
Shower plate and outer chamber lid are connected by four connecting shafts, and shower plate slides in connecting shaft, sheathed four high temperature resistant springs in described connecting shaft.The present invention uses cylinder to be compressed by exocoel lid and seals, and while closing outer chamber lid, is compressed by shower plate by spring force, it is achieved shower plate and the sealing of inner chamber body.
Heating system is located at outside inner chamber body, for heating bore body, reaches the temperature required for ALD reaction；Cooling system is located at outside outer chamber, for cooling down outer chamber and needing seal etc. to need to keep the parts of certain low temperature for cooling.It is provided with thermal insulation board in the middle of described shower plate and outer chamber lid.
Process gas through outer chamber, enters inner chamber body flange by pipeline, inner chamber body flange has the hole connecting outer chamber, then is flowed into shower plate by the gas outlet of inner chamber body flange.
Another embodiment is, process gas and carrier gas are connected with shower plate by pipeline, then process gas and carrier gas is sprayed from shower plate under vacuo.
Described shower plate is provided with air inlet pipe and gas distribution tube；Air inlet pipe is separate and gas distribution tube is separate.
Equipped with the ALD triple valve of tape pulse on the pipeline of process gas, by the control of ALD pulse valve being reached the control to the process gas scale of construction, thus control the thickness of film on substrate or the number of plies of atomic deposition.
Exhaust gas processing device is connected between vavuum pump and inner chamber body, by bleeding, is evacuated in exhaust gas processing device by the tail gas of cavity, is re-filled with certain amount of air and reacts, generates harmless particle.
Solar battery sheet batch is vertically disposed on supporting boat, and multiple supporting boats, from side loading, are placed in inner chamber body, and solar battery sheet is parallel to flow of process gases direction.
3, the technical scheme using the present invention to provide, compared with existing known technology, has a following remarkable result:
The present invention by the unique design to inner chamber body, keeps consistent, under the effect of vavuum pump with the external form of the carrier of carrying substrates, it is ensured that the flow direction of air-flow and uniform and stable, with applicable batch production；By the design of shower plate, ald is allowed to be confined in the narrow space of inner chamber；The air inlet process gas pipeline of shower plate reacting gas and distribution process gas pipeline are completely self-contained, ensure that reacting gas is completely independent before entering reaction chamber, completely avoid the generation of CVD, and be evenly distributed in air-flow reaction chamber, be beneficial to the atomic deposition layer obtained；Exhaust gas processing device, by dangerous gas, with air reaction under the effect of the filter disc of multilayer, generates harmless material, and the production making device is more environmentally-friendly.
Solar battery sheet is vertically disposed on supporting boat, is parallel to flow of process gases direction, it is ensured that the uniformity of every the plated film of cell piece, and particulate pollutant can be avoided to be attached on cell piece, it is ensured that the made passivating film of high-quality ald.
Accompanying drawing explanation
Fig. 1 vacuum of the present invention apparatus for atomic layer deposition structure chart.
Wherein, 1-inner chamber body；6-shower plate；；9-outer chamber；10-heating system；11-cooling system；12-ALD valve；13-exhaust gas processing device；14-vavuum pump；15-0-inert gas carrier；15-1 the first material source bottle；15-2 the second material gas reaction source；15-3 the 3rd material source bottle；15-4 the 4th material source bottle；.
The structural representation of the inner chamber body of Fig. 2 present invention.
Wherein, 1-inner chamber body；2-inner chamber body flange；The flange at tail end of 3-inner chamber body；4-bleeding point；5-process gas mouth.
The structural representation of the shower plate of Fig. 3 present invention.
Wherein, 6-shower plate；6-1 shower plate air inlet；6-2 mouth spray；6-3 shower plate fixes seat.
The front view of the connection of Fig. 4 A shower plate of the present invention and outer chamber lid.
Wherein, 6-shower plate；7-outer chamber lid.
The side view of the connection of Fig. 4 B shower plate of the present invention and outer chamber lid.
Wherein, 6-shower plate；7-outer chamber lid；8-thermal insulation board.
Detailed description of the invention
Below in conjunction with Figure of description and specific embodiment, the present invention is described in detail.
As it is shown in figure 1, be the structural representation of vacuum atomic layer unit.
Described device includes inner chamber body 1, shower plate 6, outer chamber 9, heating system 10, cooling system 11, process gas system 15, vavuum pump 14 and exhaust gas processing device 13.
Inner chamber body 1 is located on the support in outer chamber 9, and shower plate 6 is located at inner chamber body 1 top, and shower plate 6 is the top cover of inner chamber body 1 simultaneously；Heating system 10 is located at outside inner chamber body 1, cooling system 11 is located at outside outer chamber 9, process gas system is connected with inner chamber body 1 by process gas pipeline and pulse valve 12, inner chamber body 1 is connected with exhaust gas processing device 13, vavuum pump 14 successively by vacuum pipe, after reacting gas is discharged in inner chamber body, first pass through exhaust gas processing device 13 to process, enter vavuum pump 14.
Process gas system provides various different reacting gas sources, purging inert gas 15-0 for ALD reaction, wherein the first material source bottle 15-1, second material source bottle 15-2,3rd material source bottle 15-3, in 4th material source bottle 15-4, hold different liquid or solid source material chemicals respectively, by inert gas, the source material chemicals of needs is set out, second material source bottle 15-2 is gas source, holds gaseous chemical source.All reacting gas sources are all connected with inert gas, the carrier gas that inert gas reacts as ALD and purging gas.
Substrate is placed in inner chamber body 1, is reacted by ALD, and gas occurs chemical reaction on substrate, forms plated film.
As in figure 2 it is shown, be the structural representation of the inner chamber body of vacuum apparatus for atomic layer deposition, inner chamber body 1 is provided with inner chamber body flange 2, and inner chamber body flange 2 is provided with bleeding point 4, and this bleeding point connects vacuum extractor, the vacuum state in ensureing inner chamber body 1；The afterbody of inner chamber body 1 is provided with flange at tail end 3, and flange at tail end 3 is provided with process gas mouth 5.
As it is shown on figure 3, be the structural representation of shower plate 6, shower plate 6 is provided with air inlet 6-1, mouth spray 6-2, shower plate fixed plate 6-3；Shower plate 6 is fixed with outer chamber lid by shower plate fixed plate 6-3, and in the present embodiment, air inlet is provided with 4, lays respectively on four angles of shower plate.
As shown in Figure 4 A and 4 B shown in FIG., described shower plate 6 is connected by the inner chamber body flange 2 of inner chamber body 1 is fixing with inner chamber body 1, and described shower plate 6 is fixed with outer chamber lid 7 by connecting shaft and spring.
Below schematically creation and embodiment thereof to the present invention is described, and protection scope of the present invention includes but not limited to the description above.Shown in accompanying drawing is also one of embodiment of the invention, and actual structure is not limited thereto.So; if those of ordinary skill in the art is enlightened by the present invention; in the case of without departing from the creation objective of the present invention, design the frame mode similar to technical scheme and embodiment without creative, the protection domain of this patent all should be belonged to.
Claims (9)
1. the ald vacuum coater produced for solar battery sheet, outside described device includes
Cavity, inner chamber body, shower plate, heating system, cooling system, process gas system, exhaust gas processing device and
Vavuum pump；Inner chamber body is located on the support in outer chamber, and shower plate is located at inner chamber body top and simultaneously for inner chamber body
Top cover；Heating system is located at outside inner chamber body, and cooling system is located at outside outer chamber, and process gas system leads to
Cross process gas pipeline and pulse valve to be connected with inner chamber body top cover, inner chamber body by process gas pipeline successively with tail
Flash Gas Compression Skid System, vavuum pump connect；It is characterized in that, described shower plate passes through inner flange and the inner chamber of inner chamber body
Body is fixing to be connected, and described shower plate is fixed with outer chamber lid by connecting shaft and spring.
A kind of ald vacuum coating dress produced for solar battery sheet the most according to claim 1
Put, it is characterised in that outer chamber and inner chamber body are horizontal positioned, outside outer chamber lid and vacuum line are arranged on
The side of cavity, solar battery sheet is entered inner chamber body by outer chamber lid in batches, is loaded.
A kind of ald Vacuum Deposition produced for solar battery sheet the most according to claim 1 and 2
Film device, it is characterised in that shower plate and outer chamber lid are connected by four connecting shafts, and shower plate is in connecting shaft
Upper slip, sheathed four high temperature resistant springs in described connecting shaft；While closing outer chamber lid, pass through spring
Shower plate is compressed by elastic force.
A kind of ald vacuum coating dress produced for solar battery sheet the most according to claim 1
Put, it is characterised in that in the middle of described shower plate and outer chamber lid, be provided with thermal insulation board.
5. according to a kind of ald vacuum produced for solar battery sheet described in any one of claim 3
Coating apparatus, it is characterised in that described shower plate is provided with air inlet, process gas passes through process gas pipeline
Being connected with the air inlet on shower plate, process gas is entered inner chamber body by the air inlet on shower plate.
Vacuum apparatus for atomic layer deposition the most according to claim 1, it is characterised in that set on described shower plate
There are air inlet pipe and gas distribution tube；Air inlet pipe is separate and gas distribution tube is separate.
A kind of ald vacuum coating dress produced for solar battery sheet the most according to claim 5
Put, it is characterised in that the bleeding point of described inner chamber body is through the flange at tail end of outer chamber, outside the tail end of inner chamber body
The inside-wall surface contact of the flange at tail end of wall and outer chamber, the internal outer chamber of vavuum pump is bled simultaneously.
8. according to a kind of ald Vacuum Deposition produced for solar battery sheet described in claim 5 or 6
Film device, it is characterised in that described outer chamber is provided with adjustable gas flow measuring unit, by adjusting inner chamber body with outer
Cavity contact surface gap and interior outer chamber gas flow, can control the pressure differential of inside and outside cavity, and make outer chamber
Pressure is more than inner chamber body pressure.
A kind of ald Vacuum Deposition produced for solar battery sheet the most according to claim 1 and 2
Film device, it is characterised in that solar battery sheet batch is vertically disposed on supporting boat, multiple supporting boats are simultaneously
It is placed in inner chamber body；Described solar battery sheet is parallel to flow of process gases direction.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610397181.5A CN105925960B (en) | 2016-06-07 | 2016-06-07 | A kind of atomic layer deposition vacuum coater for solar battery sheet production |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610397181.5A CN105925960B (en) | 2016-06-07 | 2016-06-07 | A kind of atomic layer deposition vacuum coater for solar battery sheet production |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105925960A true CN105925960A (en) | 2016-09-07 |
| CN105925960B CN105925960B (en) | 2018-10-30 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201610397181.5A Active CN105925960B (en) | 2016-06-07 | 2016-06-07 | A kind of atomic layer deposition vacuum coater for solar battery sheet production |
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108511559A (en) * | 2018-05-17 | 2018-09-07 | 苏州晶洲装备科技有限公司 | A kind of electrical pumping annealing device |
| CN109536927A (en) * | 2019-01-28 | 2019-03-29 | 南京爱通智能科技有限公司 | A kind of feeding system suitable for ultra-large atomic layer deposition |
| CN111270219A (en) * | 2020-03-24 | 2020-06-12 | 无锡市正罡自动化设备有限公司 | ALD heating furnace |
| CN111519164A (en) * | 2020-04-28 | 2020-08-11 | 上海大学 | Device and method for preparing zinc oxide film based on ALD (atomic layer deposition) technology |
| CN112820798A (en) * | 2020-12-31 | 2021-05-18 | 深圳市拉普拉斯能源技术有限公司 | Passivation equipment |
| CN112864274A (en) * | 2020-12-31 | 2021-05-28 | 深圳市拉普拉斯能源技术有限公司 | Passivation equipment and passivation method |
| CN114672768A (en) * | 2022-03-29 | 2022-06-28 | 江苏微导纳米科技股份有限公司 | Thin film deposition apparatus |
| CN115341195A (en) * | 2022-08-11 | 2022-11-15 | 江苏微导纳米科技股份有限公司 | Film coating equipment |
| CN115341196A (en) * | 2022-08-22 | 2022-11-15 | 江苏微导纳米科技股份有限公司 | Reaction cavity door cover assembly and coating equipment |
| CN115404464A (en) * | 2022-09-23 | 2022-11-29 | 江苏微导纳米科技股份有限公司 | Method and apparatus for depositing thin film, and solar cell |
| CN117070920A (en) * | 2023-10-12 | 2023-11-17 | 江苏微导纳米科技股份有限公司 | Processing apparatus using gas and method of manufacturing the same |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111519164B (en) * | 2020-04-28 | 2021-03-23 | 上海大学 | Device and method for preparing zinc oxide film based on ALD (atomic layer deposition) technology |
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