CN115448612A - Quartz piece protection treatment method - Google Patents
Quartz piece protection treatment method Download PDFInfo
- Publication number
- CN115448612A CN115448612A CN202211124503.0A CN202211124503A CN115448612A CN 115448612 A CN115448612 A CN 115448612A CN 202211124503 A CN202211124503 A CN 202211124503A CN 115448612 A CN115448612 A CN 115448612A
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- CN
- China
- Prior art keywords
- quartz
- quartz piece
- layer
- piece
- process chamber
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Classifications
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
- C03C17/23—Oxides
- C03C17/245—Oxides by deposition from the vapour phase
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/20—Materials for coating a single layer on glass
- C03C2217/21—Oxides
- C03C2217/213—SiO2
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/30—Aspects of methods for coating glass not covered above
- C03C2218/31—Pre-treatment
Abstract
The invention discloses a quartz piece protection treatment method, which comprises the following steps: step S1, providing a quartz piece, and cleaning and drying the quartz piece; s2, putting the cleaned quartz piece into the furnace for preparing Al 2 O 3 In the layer arrangement, a layer of Al is formed on the surface of the quartz piece 2 O 3 A layer; and S3, putting the pretreated quartz piece into production and use. The invention is used for preparing Al 2 O 3 The layer equipment is used for pretreating quartz piece used in LPCVD, and Al layer with certain thickness is grown or formed on the surface of quartz piece 2 O 3 A film which is arranged between the quartz piece and the silicon product of the LPCVD process and becomes an isolating layer of a contact area, thereby effectively avoiding the direct contact between the silicon dioxide material of the quartz piece and the silicon product of the reaction, realizing the flexible contact between the quartz piece and the silicon product of the reaction, and utilizing Al 2 O 3 The flexible action of the protective cover can protect the quartz piece, thereby prolonging the service life of the quartz piece and reducing the production cost.
Description
Technical Field
The invention relates to the technical field of photovoltaic solar energy, in particular to a quartz piece protection treatment method.
Background
With the continuous use of human energy, the non-renewable energy is exhausted more and more, the photovoltaic solar cell industry starts to rise, thermal power generation is gradually replaced by solar power generation, and through the research and development of solar cells for many years, the N-type Topcon cell is taken as a new development direction, so that the popularization and mass production are achieved. For the gradual mass production and the expanded production of the N-type Topcon battery, the presented technical difficulties are gradually clear, for example, for the LPCVD process in the manufacturing process, the service life of the slide quartz piece is short, and the control of the manufacturing cost of the battery is greatly influenced.
The cavity and the slide glass device which are subjected to LPCVD are mainly made of quartz, the components of the cavity and the slide glass device are mainly silicon dioxide, silicon is generated due to LPCVD process reaction in the production process, the silicon is attached to the quartz piece and is in hard contact with the silicon dioxide, and the quartz piece is damaged by stress after the quartz piece is subjected to high-temperature and low-temperature alternating environments for many times, so that the quartz piece is cracked, and the service life of the quartz piece is shortened.
Disclosure of Invention
The applicant provides a reasonable and effective quartz piece protection treatment method aiming at the defects that the existing LPCVD chamber and the existing wafer carrying device are made of quartz materials, silicon generated by technological reaction is attached to a quartz piece and is pulled to damage the quartz piece under the stress action, so that the quartz piece is cracked, the service life of the quartz piece is shortened, and the like.
The technical scheme adopted by the invention is as follows:
a quartz piece protection treatment method comprises the following steps:
step S1, providing a quartz piece, and cleaning and drying the quartz piece;
s2, putting the cleaned quartz piece into the furnace for preparing Al 2 O 3 In the layer arrangement, a layer of Al is formed on the surface of the quartz piece 2 O 3 A layer;
and S3, putting the pretreated quartz piece into production and use.
As a further improvement of the above technical solution:
the quartz piece is a slide quartz boat, a quartz boat support, a quartz paddle, a quartz tube or a furnace lining tube.
In step S1, when the quartz piece is cleaned, the surface of the quartz piece is cleaned by a mixed solution of HCL and HF to remove contaminants.
In step S2, the cleaned quartz piece is put into preparation of Al 2 O 3 After the layer equipment, firstly carrying out N2 vacuum purging on the surface of the quartz piece to remove foreign matters on the surface, and then forming a layer of Al on the surface of the quartz piece 2 O 3 And (3) a layer.
The preparation of Al 2 O 3 The layer being of Al 2 O 3 Layer coating apparatus or Al 2 O 3 A layer deposition apparatus.
The Al is 2 O 3 The layer deposition equipment is ALD equipment or PEALD equipment.
The ALD device is provided with a host machine chamber, at least one process chamber is arranged in the host machine chamber, one end of the process chamber is a furnace mouth end, the other end of the process chamber is a sealed furnace tail end, a first air inlet is arranged at the position, close to the furnace mouth end, of the process chamber, a first air outlet is arranged at the position, close to the furnace tail end, of the process chamber, a second air inlet is arranged at the position, close to the furnace tail end, of the process chamber, and a second air outlet is arranged at the position, close to the furnace tail end, of the process chamber or at the furnace tail.
The ALD device deposits Al by adopting a bidirectional alternating airflow mode 2 O 3 And (3) a layer.
The ALD device is provided with a main machine chamber, at least one process chamber is arranged in the main machine chamber, one end of the process chamber is tightly connected with a chamber cover through a furnace opening flange, the other end of the process chamber is communicated with an external tail gas treatment device, the wall layer structure of the process chamber is a protective sleeve and a quartz liner tube, or the protective sleeve, the quartz liner tube and the quartz liner tube, and the end part of the process chamber is provided with a process gas inlet.
The protective sleeve is a high-temperature-resistant metal pipe.
The invention has the following beneficial effects:
the invention uses to prepare Al 2 O 3 Of a layerThe equipment is used for pretreating quartz piece used in LPCVD, and growing or forming a layer of Al with a certain thickness on the surface of the quartz piece 2 O 3 A thin film interposed between the quartz member and the silicon product of the LPCVD process as an isolation layer of the contact region, so that silicon generated during the subsequent process adheres to the substrate with Al 2 O 3 On the quartz piece of the film, the direct contact between the silicon dioxide material of the quartz piece and the reaction product silicon is effectively avoided, the flexible contact between the silicon dioxide material and the reaction product silicon is realized, and Al is utilized 2 O 3 The flexible action of the protective layer protects the quartz piece, so that the service life of the quartz piece can be prolonged to more than 12 months, the service life of the quartz piece is prolonged, and the production cost is reduced. The invention has simple process, and only needs to pretreat the surface of the quartz piece to prepare a layer of Al 2 O 3 The film is used as an isolating layer, so that the process service life of the quartz piece can be effectively prolonged, and the popularization and the use are convenient.
Drawings
FIG. 1 is a schematic view of the present invention.
In the figure: 1. a quartz piece; 2. al (Al) 2 O 3 A layer; 3. silicon.
Detailed Description
The following describes embodiments of the present invention with reference to the drawings.
As shown in FIG. 1, the quartz piece protection treatment method of the invention comprises the following steps:
step S1, providing a quartz piece 1, and cleaning and drying the quartz piece 1; the quartz piece 1 can be a slide quartz boat, a quartz boat support, a quartz paddle, a quartz tube, a furnace lining tube and the like. When the quartz member 1 is cleaned, contaminants such as metal on the surface of the quartz member 1 are removed by cleaning with a mixed solution of HCl and HF.
S2, putting the cleaned quartz piece 1 into a furnace for preparing Al 2 O 3 In the layer apparatus, a layer of Al is formed on the surface of a quartz member 1 2 O 3 A layer 2; the preparation of Al 2 O 3 The layer may be of Al 2 O 3 Layer spraying, al 2 O 3 Layer deposition or other means of preparation of Al 2 O 3 The layer deposition apparatus is preferably an ALD or PEALD apparatus. Further, the cleaned quartz member 1 was put in a place for Al production 2 O 3 After the layer is arranged, the surface of the quartz piece 1 is firstly subjected to N 2 Removing foreign matters on the surface by vacuum blowing, and forming a layer of Al on the surface of the quartz piece 1 2 O 3 Layer 2.
The invention uses to prepare Al 2 O 3 Layer apparatus for pretreating a quartz member 1 used in LPCVD to grow or form a layer of Al having a certain thickness on the surface of the quartz member 1 2 O 3 A thin film which is interposed between the quartz member 1 and the silicon 3 which is a product of the LPCVD process and serves as an isolation layer of a contact region so that silicon generated in a subsequent process may adhere to Al-bearing silicon 2 O 3 On the quartz piece of the film, the direct contact between the silicon dioxide material of the quartz piece 1 and the reaction product silicon 3 is effectively avoided, the flexible contact between the silicon dioxide material and the reaction product silicon 3 is realized, and Al is utilized 2 O 3 The flexible effect of (2) to protect the quartz piece 1 can prolong the service life of the quartz piece 1 to more than 12 months, thereby prolonging the service life of the quartz piece 1 and reducing the production cost.
As an implementation manner, the ALD apparatus has a main machine chamber, the main machine chamber has at least one process chamber, one end of the process chamber is a furnace mouth end, the other end of the process chamber is a closed furnace tail end, a first air inlet is arranged at a position of the process chamber close to the furnace mouth end, a first air outlet is arranged at a position of the process chamber close to the furnace mouth end, a second air inlet is arranged at a position of the process chamber close to the furnace tail end, and a second air outlet is arranged at a position of the process chamber close to the furnace tail end or the furnace tail.
The ALD device deposits Al by adopting a bidirectional alternating airflow mode 2 O 3 Layer 2. The aluminum oxide film grows in a bidirectional alternating air inlet mode, so that the uniformity of the aluminum oxide film can be greatly improved.
In another embodiment, the ALD apparatus has a main machine chamber, wherein the main machine chamber has at least one process chamber, one end of the process chamber is tightly connected to a chamber lid through a furnace opening flange, the other end of the process chamber is communicated with an external exhaust gas treatment device, the wall layer structure of the process chamber is a protective sleeve and a quartz liner tube, or a protective sleeve, a quartz tube and a quartz liner tube, and the end of the process chamber is provided with five air inlets, namely a TMA air inlet, a laughing gas inlet, a silane air inlet, an ammonia gas inlet and a nitrogen gas inlet, which are all led into the process chamber. The protective sleeve is a high-temperature-resistant metal pipe.
And S3, putting the pretreated quartz piece 1 into production and use.
The foregoing description is illustrative of the present invention and is not to be construed as limiting thereof, as the invention may be modified in any manner without departing from the spirit thereof.
Claims (10)
1. A quartz piece protection treatment method is characterized by comprising the following steps:
step S1, providing a quartz piece (1), and cleaning and drying the quartz piece (1);
s2, putting the cleaned quartz piece (1) into a furnace for preparing Al 2 O 3 In the layer arrangement, a layer of Al is formed on the surface of the quartz piece (1) 2 O 3 A layer (2);
and S3, putting the pretreated quartz piece (1) into production and use.
2. The quartz piece protective treatment method according to claim 1, wherein the quartz piece (1) is a slide quartz boat, a quartz boat holder, a quartz paddle, a quartz tube or a furnace lining tube.
3. The quartz piece protective treatment method according to claim 1, wherein in the step S1, when the quartz piece (1) is cleaned, contaminants on the surface of the quartz piece (1) are removed by cleaning with a mixed solution of HCl and HF.
4. The quartz piece protection processing method according to claim 1, wherein in step S2, the cleaned quartz piece (1) is put into preparation of Al 2 O 3 After the layer equipment, firstly, the surface of the quartz piece (1) is subjected to N 2 Removing foreign matters on the surface by vacuum blowing, and forming a layer of Al on the surface of the quartz piece (1) 2 O 3 A layer (2).
5. The quartz piece protective treatment method according to claim 1, wherein the Al preparation 2 O 3 The layer being of Al 2 O 3 Layer coating equipment or Al 2 O 3 A layer deposition apparatus.
6. The quartz protective treatment method according to claim 5, wherein the Al is 2 O 3 The layer deposition equipment is ALD equipment or PEALD equipment.
7. The quartz protective treatment method of claim 6, wherein the ALD apparatus has a main chamber, the main chamber has at least one process chamber therein, one end of the process chamber is a furnace mouth end, the other end is a closed furnace tail end, a first gas inlet is provided at a position of the process chamber near the furnace mouth end, a first gas outlet is provided at a position of the process chamber near the furnace mouth end, a second gas inlet is provided at a position of the process chamber near the furnace tail end, and a second gas outlet is provided at a position of the process chamber near the furnace tail end or the furnace tail.
8. The quartz protective treatment method of claim 6, wherein the ALD apparatus deposits Al by using a bidirectional alternating gas flow manner 2 O 3 A layer (2).
9. The quartz member protective processing method according to claim 6, wherein the ALD apparatus has a main chamber, at least one process chamber is provided in the main chamber, one end of the process chamber is tightly connected to the chamber lid through the furnace opening flange, the other end is communicated with an external exhaust gas processing device, the wall layer structure of the process chamber is a protective sleeve and a quartz liner tube, or the protective sleeve, the quartz liner tube and the quartz liner tube, and a gas inlet for process gas is provided at the end of the process chamber.
10. The quartz piece protection processing method according to claim 9, wherein the protection sleeve is a high temperature resistant metal tube.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211124503.0A CN115448612A (en) | 2022-09-15 | 2022-09-15 | Quartz piece protection treatment method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211124503.0A CN115448612A (en) | 2022-09-15 | 2022-09-15 | Quartz piece protection treatment method |
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| Publication Number | Publication Date |
|---|---|
| CN115448612A true CN115448612A (en) | 2022-12-09 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202211124503.0A Pending CN115448612A (en) | 2022-09-15 | 2022-09-15 | Quartz piece protection treatment method |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5443686A (en) * | 1992-01-15 | 1995-08-22 | International Business Machines Corporation Inc. | Plasma CVD apparatus and processes |
| US5607511A (en) * | 1992-02-21 | 1997-03-04 | International Business Machines Corporation | Method and apparatus for low temperature, low pressure chemical vapor deposition of epitaxial silicon layers |
| CN110129770A (en) * | 2019-06-17 | 2019-08-16 | 无锡松煜科技有限公司 | Photovoltaic cell back passivation precipitation equipment |
| CN112921302A (en) * | 2021-01-22 | 2021-06-08 | 无锡松煜科技有限公司 | Bidirectional air intake passivation deposition device for photovoltaic cell |
-
2022
- 2022-09-15 CN CN202211124503.0A patent/CN115448612A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5443686A (en) * | 1992-01-15 | 1995-08-22 | International Business Machines Corporation Inc. | Plasma CVD apparatus and processes |
| US5607511A (en) * | 1992-02-21 | 1997-03-04 | International Business Machines Corporation | Method and apparatus for low temperature, low pressure chemical vapor deposition of epitaxial silicon layers |
| CN110129770A (en) * | 2019-06-17 | 2019-08-16 | 无锡松煜科技有限公司 | Photovoltaic cell back passivation precipitation equipment |
| CN112921302A (en) * | 2021-01-22 | 2021-06-08 | 无锡松煜科技有限公司 | Bidirectional air intake passivation deposition device for photovoltaic cell |
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