WO2016176868A1 - 一种量子点发光二极管显示器 - Google Patents

一种量子点发光二极管显示器 Download PDF

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Publication number
WO2016176868A1
WO2016176868A1 PCT/CN2015/078833 CN2015078833W WO2016176868A1 WO 2016176868 A1 WO2016176868 A1 WO 2016176868A1 CN 2015078833 W CN2015078833 W CN 2015078833W WO 2016176868 A1 WO2016176868 A1 WO 2016176868A1
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pixel
sub
quantum dot
emitting diode
light emitting
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French (fr)
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杨清斗
刘亚伟
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Priority to US14/771,014 priority Critical patent/US20160351843A1/en
Publication of WO2016176868A1 publication Critical patent/WO2016176868A1/zh
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    • C09K11/025—Use of particular materials as binders, particle coatings or suspension media therefor non-luminescent particle coatings or suspension media
    • C—CHEMISTRY; METALLURGY
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    • C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/08—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
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    • H10K50/00—Organic light-emitting devices
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    • H10K50/14—Carrier transporting layers
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    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
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    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H10K59/351—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels comprising more than three subpixels, e.g. red-green-blue-white [RGBW]
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    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
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    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H10K85/1135—Polyethylene dioxythiophene [PEDOT]; Derivatives thereof
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    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H10K85/321—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3]
    • H10K85/324—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3] comprising aluminium, e.g. Alq3
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    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
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    • H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
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    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6572—Polycyclic condensed heteroaromatic hydrocarbons comprising only nitrogen in the heteroaromatic polycondensed ring system, e.g. phenanthroline or carbazole
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    • H10K50/00—Organic light-emitting devices
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations

Definitions

  • the present invention relates to the field of display technologies, and in particular, to a quantum dot light emitting diode display.
  • Quantum Dot Light Emitting Diodes displays a single sub-pixel in a pixel unit formed by a quantum dot, such as a red sub-pixel consisting of a single red quantum dot, a green sub-pixel consisting of a single green quantum dot, and a blue sub-pixel It consists of a single blue quantum dot, which can reduce the energy consumption while improving the brightness and vividness of the picture, thus becoming the main research direction of the display.
  • QD-LEDs Relative to organic light emitting diodes have many advantages: quantum dot light-emitting diodes have a narrower half-width, higher color purity; longer lifetime; higher external quantum efficiency, and external quantum efficiency (external The quantum efficiency (EQE) is likely to reach 100%; QD-LEDs can also achieve infrared light emission, while organic light-emitting diodes cannot achieve infrared light emission.
  • OLEDs Organic Light Emitting Diodes
  • OLEDs Due to the different degradation lifetimes of the red, green and blue trichromatic organic materials, OLEDs The color of the display will change with time; the existing display using quantum dot light-emitting diodes has sub-pixels that synthesize quantum dots of different sizes from the same material, and realize the illumination of the three primary colors due to the quantum confinement effect. Quantum dots synthesized by the same material have similar degenerative lifetimes, but their half-width is narrow, and the light is not soft enough, so the human eye is prone to fatigue.
  • the object of the present invention is to provide a quantum dot light emitting diode display to solve the problem that the human eye is easily fatigued when the sub-pixels of the prior art quantum dot light emitting diode display are synthesized from quantum dots of a single material due to insufficient soft light. problem.
  • the present invention constructs a quantum dot light emitting diode display comprising:
  • the switch array layer comprising a plurality of thin film transistors
  • the quantum dot luminescent layer includes a plurality of pixel units, the pixel unit including a red sub-pixel, a green sub-pixel, and a blue sub-pixel; Each of the sub-pixels is driven by one of the thin film transistors;
  • An electron transport layer on the quantum dot light emitting layer is an electron transport layer on the quantum dot light emitting layer
  • An encapsulation layer is disposed on the second electrode, and the encapsulation layer and the substrate substrate are bonded together by a sealant;
  • the sub-pixels of at least one of the red sub-pixel, the green sub-pixel, and the blue sub-pixel are mixed by at least two quantum dots having corresponding colors of different emission peak wavelengths.
  • the pixel unit further includes a white sub-pixel which is a mixture of at least two white light quantum dots having different emission peak wavelengths.
  • the pixel unit further includes a white sub-pixel which is a mixture of red light quantum dots, green light quantum dots, and blue light quantum dots.
  • the material of the hole injecting layer is polyethylene dioxythiophene.
  • the material of the electron transport layer is octahydroxyquinoline aluminum.
  • the material of the hole transport layer is polytriphenylamine.
  • a protective layer is disposed between the encapsulation layer and the second electrode.
  • the red sub-pixel, the green sub-pixel, the blue sub-pixel, and the white sub-pixel are each formed using a structure of an organic host material and quantum dots.
  • the organic host material is TCTA.
  • the organic host material is TRZ.
  • the present invention constructs a quantum dot light emitting diode display comprising:
  • the quantum dot luminescent layer includes a plurality of pixel units, the pixel unit including a red sub-pixel, a green sub-pixel, and a blue sub-pixel;
  • An electron transport layer on the quantum dot light emitting layer is an electron transport layer on the quantum dot light emitting layer
  • the sub-pixels of at least one of the red sub-pixel, the green sub-pixel, and the blue sub-pixel are mixed by at least two quantum dots having corresponding colors of different emission peak wavelengths.
  • the pixel unit further includes a white sub-pixel which is a mixture of at least two white light quantum dots having different emission peak wavelengths.
  • the pixel unit further includes a white sub-pixel which is a mixture of red light quantum dots, green light quantum dots, and blue light quantum dots.
  • the pixel unit further includes a white sub-pixel which is a mixture of a blue quantum dot and a yellow quantum dot.
  • the red sub-pixel is a mixture of at least two red light quantum dots having different emission peak wavelengths
  • the green sub-pixel is a mixture of at least two green light quantum dots having different emission peak wavelengths
  • the blue sub-pixel is a mixture of at least two blue quantum dots having different emission peak wavelengths.
  • the sub-pixels of at least one of the red sub-pixel, the green sub-pixel, and the blue sub-pixel are mixed by quantum dots of corresponding colors of at least two constituent materials. Made.
  • the sub-pixels of at least one of the red sub-pixel, the green sub-pixel, and the blue sub-pixel are mixed by quantum dots of corresponding colors of at least two particle sizes. Made.
  • the material of the base substrate is glass or a flexible material.
  • the quantum dot light emitting diode display further includes a switch array layer, the switch array layer includes a plurality of thin film transistors, and each of the pixel units each has one of the thin films Transistor driven.
  • the quantum dot light emitting diode display further includes an encapsulation layer, and the encapsulation layer and the base substrate are bonded together by a sealant.
  • the quantum dot light emitting diode display of the present invention can increase the half width of the sub-pixel by mixing the sub-pixels of at least one color in the pixel unit by quantum of at least two corresponding colors, so that the light of the display is further Soft, which effectively relieves visual fatigue.
  • FIG. 1 is a schematic structural view of a quantum dot light emitting diode display according to a first embodiment of the present invention
  • FIG. 2 is a schematic structural view of a quantum dot light emitting diode display according to a second embodiment of the present invention.
  • 3 is a schematic view showing the peak wavelength of luminescence of a green light quantum dot of the present invention.
  • FIG. 4 is a schematic diagram showing the peak wavelength of luminescence of a red light quantum dot according to the present invention.
  • FIG. 5 is a schematic diagram showing the peak wavelength of light emission of a blue quantum dot according to the present invention.
  • FIG. 6 is a schematic view showing a first arrangement of a pixel unit according to the present invention.
  • FIG. 7 is a schematic view showing a second arrangement of pixel units of the present invention.
  • FIG. 1 is a schematic structural diagram of a quantum dot light emitting diode display according to a first embodiment of the present invention
  • the quantum dot light emitting diode display of the present invention comprises a base substrate 11, a first electrode 13, a hole injection layer 14, a hole transport layer 15, a quantum dot light emitting layer 16, an electron transport layer 17, and a second electrode 18;
  • the first electrode 13 is located on the base substrate 11;
  • the first electrode 13 is, for example, an anode, and the hole injection layer 14 is located on the first electrode 13;
  • the hole transport layer 15 is located at the space a hole injecting layer 14;
  • the quantum dot emitting layer 16 is located on the hole transport layer 15, the electron transport layer 17 is located on the quantum dot light emitting layer 16;
  • the second electrode 18 is located in the electron transport On the layer 17;
  • the second electrode 18 is, for example, a cathode;
  • the quantum dot light emitting layer 15 includes a plurality of pixel units, and the pixel unit includes a red sub-pixel 161, a green sub-pixel 162, and a blue sub-pixel 163;
  • the sub-pixels of at least one of the red sub-pixel 161, the green sub-pixel 162, and the blue sub-pixel 163 are mixed by at least two quantum dots having corresponding colors of different emission peak wavelengths.
  • the red sub-pixel 161 is made up of at least two red light quantum dots having different illuminating peak wavelengths; or the green sub-pixel 162 is mixed by at least two green light quantum dots having different illuminating peak wavelengths;
  • the blue sub-pixel 163 is a mixture of at least two blue quantum dots having different emission peak wavelengths.
  • each of the red sub-pixel 161, the green sub-pixel 162, and the blue sub-pixel 163 is respectively composed of a plurality of quantum dots having corresponding colors of different emission peak wavelengths, that is, the composition
  • the plurality of quantum dots of the red sub-pixel 161 are all located in the red light band
  • the plurality of quantum dots constituting the green sub-pixel 162 are all located in the green light band
  • the plurality of quantum dots constituting the blue sub-pixel 163 are all located in the blue light band.
  • the blue sub-pixel in the pixel unit can be mixed by two blue quantum dots with an emission peak wavelength of 450 nm and another emission peak wavelength of 465 nm.
  • the abscissa indicates the length of the wavelength (the abscissa of FIG. 4 and FIG. 5 also indicates the length of the wavelength), and A1, A2, and A3 represent three kinds of red quantum dots having different illuminating peak wavelengths in the red band.
  • the illuminating peak wavelength of A1 is m1
  • the illuminating peak wavelength of A2 is m2
  • the illuminating peak wavelength of A3 is m3
  • the red sub-pixel in the pixel unit is a mixture of three kinds of red light quantum dots A1, A2, and A3.
  • the red light emitted by the red sub-pixels corresponds to the curve A0 in FIG.
  • the half-value width thereof is significantly larger than the half-width of the single red quantum dot A1, A2 or A3, that is, at least two wavelengths having different illuminating peaks are used.
  • the quantum dot mixing can effectively increase the half width value.
  • the wavelength range of the red light A0 emitted by the red sub-pixel dots in this embodiment is preferably 620 nm to 760 nm.
  • B1, B2, and B3 represent three kinds of green light quantum dots having different illuminating peak wavelengths in the green light band, and the illuminating peak wavelengths of B1 are d1, the illuminating peak wavelengths of B2 are d2, and the illuminating peak wavelengths of B3 are d3.
  • the green sub-pixel in the pixel unit is a mixture of three green light quantum dots B1, B2, and B3.
  • the green light emitted by the mixed green sub-pixels corresponds to the curve B0 in FIG. 4, and the half-value width thereof is significantly larger than the half-width of the single green quantum dot B1, B2 or B3.
  • the wavelength range of the green light B0 emitted by the green sub-pixel dots in this embodiment is preferably 500 nm to 578 nm.
  • C1, C2, and C3 represent three kinds of blue quantum dots having different emission peak wavelengths in the blue light band, C1 having an emission peak wavelength of n1, C2, and an emission peak wavelength of n2 and C3 having an emission peak wavelength of n3, the pixel
  • the blue sub-pixels in the cell can be a mixture of three blue quantum dots C1, C2, and C3.
  • the blue light emitted by the mixed blue sub-pixel points corresponds to the curve C0 in FIG. 5, and the half-value width thereof is significantly larger than the half-value width of the single blue quantum dot C1, C2 or C3.
  • the wavelength range of the blue light C0 emitted by the blue sub-pixel dots in this embodiment is preferably 446 nm to 464 nm.
  • the red sub-pixel is composed of a single red light quantum dot
  • the green sub-pixel is composed of a single green light quantum dot
  • the blue sub-pixel is composed of a single blue quantum dot
  • the sub-pixel is a mixture of two or more quantum dots having different illuminating peak wavelengths, such that the half-width of the sub-pixel is widened, and the wider the half-width, the softer the light; thus the quantum obtained by the present invention
  • the light-emitting diode display has softer light and can effectively relieve eye fatigue.
  • the quantum dot light emitting diode display may further include a switch array layer 12, preferably the switch array layer 12 is located on the base substrate 11, and the first electrode 13 is located at the switch array layer.
  • the switch array layer 12 includes a plurality of thin film transistors 121, each of the pixel units being driven by one of the thin film transistors, such as the red sub-pixel 161, the green sub-pixel 162, The blue sub-pixels 163 are each driven by a thin film transistor 121.
  • the material of the hole transport layer 15 may be polytriphenylamine; the material of the electron transport layer 17 is octahydroxyquinoline aluminum; and the material of the hole injection layer 14 is polyethylene dioxythiophene.
  • the material of the base substrate 11 may be glass or a flexible material.
  • the pixel unit further includes a white sub-pixel 164 having various compositions.
  • the white sub-pixel 164 may be a mixture of at least two white light quantum dots having different emission peak wavelengths.
  • the white sub-pixel 164 may also be a mixture of red light quantum dots, green light quantum dots, and blue light quantum dots.
  • the white sub-pixel 164 may also be a mixture of blue quantum dots and yellow light quantum dots.
  • the pixel unit may further include a yellow sub-pixel, and the yellow sub-pixel may also be mixed by at least two yellow quantum dots having different emission peak wavelengths. Made. By adding white sub-pixels, the brightness of the white screen of the display can be increased and the energy consumption can be reduced.
  • the sub-pixels in the pixel unit have a plurality of arrangements, and the embodiment is merely given an example and is not specifically limited. All of the sub-pixels in the pixel unit may be arranged side by side, for example, the red sub-pixel 161, the green sub-pixel 162, and the blue sub-pixel 163 in each of the pixel units are arranged side by side; or as shown in FIG. 6 As shown, the red sub-pixel 161, the green sub-pixel 162, the blue sub-pixel 163, and the white sub-pixel 164 are arranged side by side in the pixel unit; or in the manner of FIG.
  • the red sub-pixel 161, the green sub-pixel 162, the blue sub-pixel 163, and the white sub-pixel 164 are arranged in a square, preferably, the upper left corner is the red sub-pixel 161, and the upper right corner
  • the green sub-pixel 162 is the blue sub-pixel 163 in the lower left corner and the white sub-pixel 164 in the lower right corner.
  • the quantum dot light emitting diode display further includes an encapsulation layer 20 bonded to the substrate substrate 11 by a sealant to seal and protect internal electronic devices.
  • a protective layer 19 may also be disposed between the encapsulation layer 20 and the second electrode 18.
  • the protective layer 19 may be composed of nitrogen or a transparent layer containing a desiccant for preventing water or oxygen from entering the display.
  • At least one of the base substrate 11 or the encapsulation layer 20 transmits light.
  • the material of the encapsulation layer 20 may be glass or a flexible material.
  • the red sub-pixel, the green sub-pixel, the blue sub-pixel, and the white sub-pixel may be formed by using an organic host material and a quantum dot structure, specifically, mixing the organic host material with inorganic quantum dot particles and a solvent, and mixing the mixture first.
  • the solution is coated on the hole transport layer, and after volatilization, the solvent is removed to obtain a sub-pixel.
  • the organic host material used in this preparation may be TCTA (4,4',4''-Tri(9-carbazoyl)triphenyla) and/or TRZ(1,2,4-triazolat), but is not limited thereto. These materials.
  • the structure of TCTA (4,4',4''-Tri(9-carbazoyl)triphenyla) is as follows:
  • TRZ (1, 2, 4-triazolat) is as follows:
  • the red sub-pixel, the green sub-pixel, the blue sub-pixel, and the white sub-pixel may also be an inorganic quantum dot layer that does not use an organic host material structure, wherein at least one color sub-pixel has at least two different emission peak wavelengths
  • the quantum dots of the corresponding colors are mixed.
  • the specific preparation method comprises: mixing a plurality of inorganic quantum dots with a surface coating agent and a solvent, and coating the mixed solution on the hole transport layer, and volatilizing to obtain a sub-pixel.
  • the surface coating agent may be stearic acid or tri-zinc-phosphine oxide or polymethyl methacrylate or the like.
  • quantum dots are nanoparticles, zero-dimensional materials have large surface activity and are prone to agglomeration, leading to oxidation and quenching of fluorescence. Therefore, an organic host material or a surface coating agent is required in the preparation process of the sub-pixel to prevent quantum dot agglomeration and oxidation.
  • the sub-pixels of at least one color are mixed by at least two quantum dots of corresponding colors having different illuminating peak wavelengths, and specifically include the following two implementation forms:
  • a sub-pixel of at least one color is a mixture of two or more different types (i.e., different constituent materials) of quantum dots.
  • a blue sub-pixel can be mixed with two or more different types of blue quantum dots to emit blue light, such as cadmium sulfide cadmium ZnCdS quantum dots and CdSe/ZnS quantum dot mixing.
  • the sub-pixels of the at least one color may also be composed of at least two different particle diameters of the same type of quantum dots.
  • the blue sub-pixels may use CdSe/ZnS quantum dots of two or more different particle diameters.
  • the mixture emits blue light.
  • red sub-pixel and the green sub-pixel are also respectively obtained by mixing quantum dots of corresponding colors by two similar implementations.
  • the white light quantum dots may be II ⁇ VI quantum dots, such as cadmium selenide CdSe quantum dots, cadmium sulfide CdS quantum dots, cadmium telluride CdTe quantum dots, cadmium manganese sulfur CdMnS quantum dots, zinc selenide ZnSe quantum dots, or zinc.
  • II ⁇ VI quantum dots such as cadmium selenide CdSe quantum dots, cadmium sulfide CdS quantum dots, cadmium telluride CdTe quantum dots, cadmium manganese sulfur CdMnS quantum dots, zinc selenide ZnSe quantum dots, or zinc.
  • the blue light quantum dots may be zinc cadmium sulfide ZnCdS quantum dots, CdSe/ZnS quantum dots, or SiN4 quantum dots.
  • the green light quantum dots may be CdSe/ZnS quantum dots or ZnSe:Cu2+ quantum dots.
  • the above red light quantum dots may be CdSe/CdS/ZnS quantum dots.
  • the yellow light quantum dots may be CdSe/CdS/ZnS quantum dots or ZnS:Mn2+ quantum dots.
  • the quantum dot light emitting diode display of the present invention can increase the half width of the subpixel by mixing the subpixels of at least one color of the pixel unit with quantum of at least two corresponding colors having different emission peak wavelengths.
  • the light of the display is softened, thereby relieving the fatigue of the human eye; the use of quantum dot illumination technology can improve the stability and energy efficiency of the display, and the color coordinate of each sub-pixel can control the particle size and composition of the quantum dots therein.
  • the quantum dot luminescent layer of the present invention has a thickness of only a few hundred nanometers, and is easier to fabricate on a flexible substrate than the existing LCD/LED, and is more easily realized to be ultra-thin, transparent, and flexible.

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Abstract

提供一种量子点发光二极管显示器，其包括：第一电极（13）、空穴注入层（14）、空穴传输层（15）、量子点发光层（16）、电子传输层（17）、第二电极（18），所述量子点发光层（16）包括多个像素单元，所述像素单元包括红色子像素（161）、绿色子像素（162）、蓝色子像素（163）；所述像素单元中至少一种颜色的子像素是由至少两种具有不同发光峰值波长的对应颜色的量子点混合而成。

Description

一种量子点发光二极管显示器 技术领域
本发明涉及显示器技术领域，特别是涉及一种量子点发光二极管显示器。
 背景技术
量子点发光二极管（Quantum Dots Light Emitting Diodes，QD-LEDs）显示器，其像素单元中的单个子像素由一种量子点形成，譬如红色子像素由单个的红光量子点组成、绿色子像素由单个的绿光量子点组成、蓝色子像素由单个的蓝光量子点组成，从而能够在提高亮度和画面鲜艳度的同时，减少能耗，因而成为显示器主要的研究方向。QD-LEDs 相对于有机发光二极管（Organic Light Emitting Diodes，OLEDs）有很多的优势：量子点发光二极管的半峰宽较窄，画面的色纯度更高；使用寿命较长；有较高的外量子效率，其外量子效率（external quantum efficiency，EQE）有可能达到 100% ；QD-LEDs 还可以实现红外光的发射，而有机发光二极管不能实现红外光的发射。
由于红绿蓝三基色有机材料各自的退化寿命不同，OLEDs 显示器的颜色将随时间变化；现有使用量子点发光二极管制成的显示器，其子像素是由同一种材料合成不同尺寸的量子点，由于量子限域效应，从而实现三基色的发光，这种用同一种材料合成的量子点虽然具有相近的退化寿命，但其半峰宽较窄，光线不够柔和，因而人眼容易疲劳。
因此，有必要提供一种量子点发光二极管显示器，以解决现有技术所存在的问题。
 技术问题
本发明的目的在于提供一种量子点发光二极管显示器，以解决现有技术的量子点发光二极管显示器的子像素由单一材料的量子点合成时，因光线不够柔和而导致的人眼容易疲劳的技术问题。
 技术解决方案
为解决上述技术问题，本发明构造了一种量子点发光二极管显示器，其包括：
衬底基板；
开关阵列层，位于所述衬底基板上，所述开关阵列层包括多个薄膜晶体管；
第一电极，位于所述开关阵列层上；
空穴注入层，位于所述第一电极上；
空穴传输层，位于所述空穴注入层上；
量子点发光层，位于所述空穴传输层上；所述量子点发光层包括多个像素单元，所述像素单元包括红色子像素、绿色子像素、蓝色子像素；所述像素单元中的每个子像素各由一个所述薄膜晶体管驱动；
电子传输层，位于所述量子点发光层上；
第二电极，位于所述电子传输层上；以及
封装层，位于所述第二电极上，所述封装层与所述衬底基板通过密封胶粘结在一起；
其中所述红色子像素、所述绿色子像素、所述蓝色子像素中至少一种颜色的子像素由至少两种具有不同发光峰值波长的对应颜色的量子点混合而成。
在本发明的量子点发光二极管显示器中，所述像素单元还包括白色子像素，所述白色子像素是由至少两种具有不同发光峰值波长的白光量子点混合而成。
在本发明的量子点发光二极管显示器中，所述像素单元还包括白色子像素，所述白色子像素是由红光量子点、绿光量子点和蓝光量子点混合而成。
在本发明的量子点发光二极管显示器中，所述空穴注入层的材料为聚乙撑二氧噻吩。
在本发明的量子点发光二极管显示器中，所述电子传输层的材料为八羟基喹啉铝。
在本发明的量子点发光二极管显示器中，所述空穴传输层的材料为聚三苯胺。
在本发明的量子点发光二极管显示器中，所述封装层与所述第二电极之间设置有保护层。
在本发明的量子点发光二极管显示器中，所述红色子像素、所述绿色子像素、所述蓝色子像素和所述白色子像素均采用有机主体材料和量子点的结构形成。
在本发明的量子点发光二极管显示器中，所述有机主体材料为TCTA。
在本发明的量子点发光二极管显示器中，所述有机主体材料为TRZ。
为解决上述技术问题，本发明构造了一种量子点发光二极管显示器，其包括：
衬底基板；
第一电极，位于所述衬底基板上；
空穴注入层，位于所述第一电极上；
空穴传输层，位于所述空穴注入层上；
量子点发光层，位于所述空穴传输层上；所述量子点发光层包括多个像素单元，所述像素单元包括红色子像素、绿色子像素、蓝色子像素；
电子传输层，位于所述量子点发光层上；
第二电极，位于所述电子传输层上；
其中所述红色子像素、所述绿色子像素、所述蓝色子像素中至少一种颜色的子像素由至少两种具有不同发光峰值波长的对应颜色的量子点混合而成。
在本发明的量子点发光二极管显示器中，所述像素单元还包括白色子像素，所述白色子像素是由至少两种具有不同发光峰值波长的白光量子点混合而成。
在本发明的量子点发光二极管显示器中，所述像素单元还包括白色子像素，所述白色子像素是由红光量子点、绿光量子点和蓝光量子点混合而成。
在本发明的量子点发光二极管显示器中，所述像素单元还包括白色子像素，所述白色子像素是由蓝光量子点和黄光量子点混合而成。
在本发明的量子点发光二极管显示器中，所述红色子像素是由至少两种具有不同发光峰值波长的红光量子点混合而成；
所述绿色子像素是由至少两种具有不同发光峰值波长的绿光量子点混合而成；
所述蓝色子像素是由至少两种具有不同发光峰值波长的蓝光量子点混合而成。
在本发明的量子点发光二极管显示器中，所述红色子像素、所述绿色子像素、所述蓝色子像素中至少一种颜色的子像素由至少两种组成材料的对应颜色的量子点混合而成。
在本发明的量子点发光二极管显示器中，所述红色子像素、所述绿色子像素、所述蓝色子像素中至少一种颜色的子像素由至少两种粒径的对应颜色的量子点混合而成。
在本发明的量子点发光二极管显示器中，所述衬底基板的材料为玻璃或者柔性材料。
在本发明的量子点发光二极管显示器中，所述量子点发光二极管显示器还包括开关阵列层，所述开关阵列层包括多个薄膜晶体管，所述像素单元中的每个子像素各由一个所述薄膜晶体管驱动。
在本发明的量子点发光二极管显示器中，所述量子点发光二极管显示器还包括封装层，所述封装层与所述衬底基板通过密封胶粘结在一起。
 有益效果
本发明的量子点发光二极管显示器，通过将像素单元中的至少一种颜色的子像素由至少两种对应颜色的量子混合而成，能够增大该子像素的半峰宽，使得显示器的光线更柔和，从而有效缓解视疲劳。
附图说明
图1为本发明第一实施例的量子点发光二极管显示器的结构示意图；
图2为本发明第二实施例的量子点发光二极管显示器的结构示意图；
图3为本发明绿光量子点的发光峰值波长示意图；
图4为本发明红光量子点的发光峰值波长示意图；
图5为本发明蓝光量子点的发光峰值波长示意图；
图6为本发明像素单元的第一种排列示意图；
图7为本发明像素单元的第二种排列示意图。
 本发明的最佳实施方式
以下各实施例的说明是参考附加的图式，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如「上」、「下」、「前」、「后」、「左」、「右」、「内」、「外」、「侧面」等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是以相同标号表示。
请参照图1，图1为本发明第一实施例的量子点发光二极管显示器的结构示意图；
本发明的量子点发光二极管显示器，包括衬底基板11、第一电极13、空穴注入层14、空穴传输层15、量子点发光层16、电子传输层17、第二电极18；所述第一电极13位于所述衬底基板11上；所述第一电极13譬如为阳极，所述空穴注入层14位于所述第一电极13上；所述空穴传输层15位于所述空穴注入层14上；所述量子点发光层16位于所述空穴传输层15上，所述电子传输层17位于所述量子点发光层16上；所述第二电极18位于所述电子传输层上17；所述第二电极18譬如为阴极；
所述量子点发光层15包括多个像素单元，所述像素单元包括红色子像素161、绿色子像素162、蓝色子像素163；
其中，所述红色子像素161、所述绿色子像素162、所述蓝色子像素163中至少一种颜色的子像素由至少两种具有不同发光峰值波长的对应颜色的量子点混合而成。
即所述红色子像素161由至少两种具有不同发光峰值波长的红光量子点混合而成；或者所述绿色子像素162由至少两种具有不同发光峰值波长的绿光量子点混合而成；或者所述蓝色子像素163由至少两种具有不同发光峰值波长的蓝光量子点混合而成。
本发明提供的优选实施例中，红色子像素161、绿色子像素162和蓝色子像素163中的每一个，分别由几种具有不同发光峰值波长的对应颜色的量子点混合而成，即组成红色子像素161的多种量子点均位于红光波段内、组成绿色子像素162的多种量子点均位于绿光波段内，组成蓝色子像素163的多种量子点均位于蓝光波段内。比如，蓝光的波长范围是440nm~480nm，那么像素单元中的蓝色子像素就可以采用由一个发光峰值波长位于450nm与另一个发光峰值波长位于465nm的两个蓝光量子点混合在一起，共同发光，当然也可以是两种以上的蓝光量子点共同混合成蓝色子像素。
结合图3，其横坐标表示波长的长度（图4、图5横坐标也表示波长的长度），A1、A2、A3代表位于红光波段内的3种具有不同发光峰值波长的红光量子点，A1的发光峰值波长为m1、A2的发光峰值波长为m2、A3的发光峰值波长为m3，所述像素单元中的红色子像素由3种红光量子点A1、A2、A3混合而成，该混合而成的红色子像素点所发出的红光对应图3中的曲线A0，其半峰宽明显大于单一红光量子点A1、A2或A3的半峰宽，即采用至少两种具有不同发光峰值波长的量子点混合可有效增大半峰宽值。 此外，本实施例中的红色子像素点所发出的红光A0的波长范围优选为620nm~760nm。
同理，结合图4， B1、B2、B3代表位于绿光波段内的3种具有不同发光峰值波长的绿光量子点，B1的发光峰值波长为d1、B2的发光峰值波长为d2、B3的发光峰值波长为d3，所述像素单元中的绿色子像素由3种绿光量子点B1、B2、B3混合而成。该混合而成的绿色子像素点所发出的绿光对应图4中的曲线B0，其半峰宽明显大于单一绿光量子点B1、B2或B3的半峰宽。此外，本实施例中的绿色子像素点所发出的绿光B0的波长范围优选为500nm~578nm。
同理，结合图5， C1、C2、C3代表位于蓝光波段内的3种具有不同发光峰值波长的蓝光量子点、C1的发光峰值波长为n1、C2的发光峰值波长为n2、C3的发光峰值波长为n3，所述像素单元中的蓝色子像素可由3种蓝光量子点C1、C2、C3混合而成。该混合而成的蓝色子像素点所发出的蓝光对应图5中的曲线C0，其半峰宽明显大于单一蓝光量子点C1、C2或C3的半峰宽。此外，本实施例中的蓝色子像素点所发出的蓝光C0的波长范围优选为446nm~464nm。
现有技术中红色子像素由单个的红光量子点组成、绿色子像素由单个的绿光量子点组成、蓝色子像素由单个的蓝光量子点组成，而本发明的像素单元中至少一种颜色的子像素是由两种或者两种以上具有不同发光峰值波长的量子点混合而成，使得该子像素的半峰宽变宽，由于半峰宽越宽，光线越柔和；因而本发明得到的量子点发光二极管显示器的光线更柔和，能够有效缓解人眼疲劳。
如图1所示，所述量子点发光二极管显示器还可包括开关阵列层12，优选地所述开关阵列层12位于所述衬底基板11上，所述第一电极13位于所述开关阵列层12上，所述开关阵列层12包括多个薄膜晶体管121，所述像素单元中的每个子像素各由一个所述薄膜晶体管驱动，譬如所述红色子像素161、所述绿色子像素162、所述蓝色子像素163各由一个薄膜晶体管121驱动。
所述空穴传输层15的材料可为聚三苯胺；所述电子传输层17的材料为八羟基喹啉铝；所述空穴注入层14的材料为聚乙撑二氧噻吩。所述衬底基板11的材料可为玻璃或者柔性材料。
结合图2，所述像素单元还包括白色子像素164，所述白色子像素164有多种组成方式，例如，白色子像素164可由至少两种具有不同发光峰值波长的白光量子点混合而成。所述白色子像素164也可由红光量子点、绿光量子点和蓝光量子点混合而成。所述白色子像素164还可由蓝光量子点和黄光量子点混合而成，所述像素单元还可包括黄色子像素，所述黄色子像素也可由至少两种具有不同发光峰值波长的黄光量子点混合而成。通过增加白色子像素，可以提高显示器白画面的亮度，减小能耗。
像素单元中的子像素具有多种排列方式，本实施例只是给出示例，不作具体限定。所述像素单元中的全部子像素可并排排列，譬如每个所述像素单元中的所述红色子像素161、所述绿色子像素162、所述蓝色子像素163并排排列；或者如图6所示，所述像素单元中的所述红色子像素161、所述绿色子像素162、所述蓝色子像素163、所述白色子像素164并排排列；或者按照图7的方式，所述像素单元中的所述红色子像素161、所述绿色子像素162、所述蓝色子像素163、所述白色子像素164呈四方排列，优选地，左上角为所述红色子像素161、右上角为所述绿色子像素162、左下角为所述蓝色子像素163、右下角为所述白色子像素164。
结合图1或图2，所述量子点发光二极管显示器还包括封装层20，所述封装层20与所述衬底基板11通过密封胶粘结在一起，以密封与保护内部电子器件。所述封装层20与所述第二电极18之间还可设置保护层19，该保护层19可以由氮气组成，或者是含有干燥剂的透明层，用于防止水或者氧气进入显示器内。
所述衬底基板11或者所述封装层20中至少有一个透光。所述封装层20的材料可为玻璃或者柔性材料。
上述红色子像素、绿色子像素、蓝色子像素和白色子像素，可以是采用有机主体材料和量子点的结构形成，具体是将有机主体材料与无机量子点颗粒及溶剂混合，先将混合后的溶液涂覆在空穴传输层上，并经过挥发后，去除溶剂得到子像素。在这一制备过程中所采用的有机主体材料可以是TCTA(4,4’,4’’-Tri(9-carbazoyl)triphenyla)和/或TRZ（1,2,4-triazolat），但不限于这些材料。TCTA(4,4’,4’’-Tri(9-carbazoyl)triphenyla)的结构如下：
TRZ（1,2,4-triazolat）的结构如下：
上述红色子像素、绿色子像素、蓝色子像素和白色子像素也可以是不使用有机主体材料结构的无机量子点层，其中，至少一种颜色的子像素由至少两种具有不同发光峰值波长的对应颜色的量子点混合而成。具体的制备方法包括：将多种无机量子点与表面包覆剂及溶剂先混合，再将混合后的溶液涂覆在空穴传输层上，并经过挥发后，得到子像素。所述表面包覆剂可以是由硬脂酸或者，氧化三锌基膦或者，聚甲基丙烯酸甲酯等。
由于量子点是纳米颗粒，零维材料，表面活性大，容易发生团聚，导致氧化并使荧光淬灭。因此在子像素的制备过程中需要用到有机主体材料或者表面包覆剂，以防止量子点团聚与氧化。
在本发明中，至少一种颜色的子像素由至少两种具有不同发光峰值波长的对应颜色的量子点混合而成，其具体包括以下两种实现形式：
（1）至少一种颜色的子像素由两种及以上的不同种类（即不同组成材料）的量子点混合而成。比如，蓝色子像素可以采用两种及以上不同种类的蓝光量子点混合发出蓝光，比如由硫化锌镉ZnCdS量子点和 CdSe/ZnS量子点混合。
（2）该至少一种颜色的子像素也可以是由同一种类的量子点的至少两种不同粒径组成，比如，蓝色子像素可以采用两种及以上不同粒径的CdSe/ZnS量子点混合发出蓝光。
可以理解的是，红色子像素与绿色子像素也是通过类似的两种实现方式分别由对应颜色的量子点混合得到。
上述白光量子点可以是Ⅱ~Ⅵ族量子点，譬如硒化镉CdSe量子点、硫化镉CdS量子点、碲化镉CdTe量子点、镉锰硫CdMnS量子点、硒化锌ZnSe量子点、或锌锰硒ZnMnSe量子点等。
上述蓝光量子点可以是硫化锌镉ZnCdS量子点 、CdSe/ZnS量子点、或者SiN4量子点。
上述绿光量子点可以是CdSe/ZnS量子点、或者ZnSe：Cu2+量子点。
上述红光量子点可以是CdSe/CdS/ZnS量子点。
上述黄光量子点可以是CdSe/CdS/ZnS量子点、或ZnS：Mn2+量子点。
本发明的量子点发光二极管显示器，通过将像素单元中的至少一种颜色的子像素由至少两种具有不同发光峰值波长的对应颜色的量子混合而成，能够增大该子像素的半峰宽，使得显示器的光线更柔和，从而缓解人眼疲劳；量子点发光技术的使用能提高显示器的稳定性和能效，且每个子像素点的光色坐标可以通过控制其内量子点的粒径和组成来进行调节；本发明中的量子点发光层只有几百纳米的厚度，比现有的LCD/LED更易制作在柔性基板上，更易实现超薄、透明和易弯曲。
综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。

Claims (20)

  1. 一种量子点发光二极管显示器，其包括：
    衬底基板；
    开关阵列层，位于所述衬底基板上，所述开关阵列层包括多个薄膜晶体管；
    第一电极，位于所述开关阵列层上；
    空穴注入层，位于所述第一电极上；
    空穴传输层，位于所述空穴注入层上；
    量子点发光层，位于所述空穴传输层上；所述量子点发光层包括多个像素单元，所述像素单元包括红色子像素、绿色子像素、蓝色子像素；所述像素单元中的每个子像素各由一个所述薄膜晶体管驱动；
    电子传输层，位于所述量子点发光层上；
    第二电极，位于所述电子传输层上；以及
    封装层，位于所述第二电极上，所述封装层与所述衬底基板通过密封胶粘结在一起；
    其中所述红色子像素、所述绿色子像素、所述蓝色子像素中至少一种颜色的子像素由至少两种具有不同发光峰值波长的对应颜色的量子点混合而成。
  2. 根据权利要求1所述的量子点发光二极管显示器，其中
    所述像素单元还包括白色子像素，所述白色子像素是由至少两种具有不同发光峰值波长的白光量子点混合而成。
  3. 根据权利要求1所述的量子点发光二极管显示器，其中
    所述像素单元还包括白色子像素，所述白色子像素是由红光量子点、绿光量子点和蓝光量子点混合而成。
  4. 根据权利要求1所述的量子点发光二极管显示器，其中所述空穴注入层的材料为聚乙撑二氧噻吩。
  5. 根据权利要求1所述的量子点发光二极管显示器，其中所述电子传输层的材料为八羟基喹啉铝。
  6. 根据权利要求1所述的量子点发光二极管显示器，其中所述空穴传输层的材料为聚三苯胺。
  7. 根据权利要求1所述的量子点发光二极管显示器，其中
    所述封装层与所述第二电极之间设置有保护层。
  8. 根据权利要求1所述的量子点发光二极管显示器，其中
    所述红色子像素、所述绿色子像素、所述蓝色子像素和所述白色子像素均采用有机主体材料和量子点的结构形成。
  9. 根据权利要求8所述的量子点发光二极管显示器，其中
    所述有机主体材料为TCTA。
  10. 根据权利要求8所述的量子点发光二极管显示器，其中
    所述有机主体材料为TRZ。
  11. 一种量子点发光二极管显示器，其包括：
    衬底基板；
    第一电极，位于所述衬底基板上；
    空穴注入层，位于所述第一电极上；
    空穴传输层，位于所述空穴注入层上；
    量子点发光层，位于所述空穴传输层上；所述量子点发光层包括多个像素单元，所述像素单元包括红色子像素、绿色子像素、蓝色子像素；
    电子传输层，位于所述量子点发光层上；以及
    第二电极，位于所述电子传输层上；
    其中所述红色子像素、所述绿色子像素、所述蓝色子像素中至少一种颜色的子像素由至少两种具有不同发光峰值波长的对应颜色的量子点混合而成。
  12. 根据权利要求11所述的量子点发光二极管显示器，其中
    所述像素单元还包括白色子像素，所述白色子像素是由至少两种具有不同发光峰值波长的白光量子点混合而成。
  13. 根据权利要求11所述的量子点发光二极管显示器，其中
    所述像素单元还包括白色子像素，所述白色子像素是由红光量子点、绿光量子点和蓝光量子点混合而成。
  14. 根据权利要求11所述的量子点发光二极管显示器，其中
    所述像素单元还包括白色子像素，所述白色子像素是由蓝光量子点和黄光量子点混合而成。
  15. 根据权利要求11所述的量子点发光二极管显示器，其中
    所述红色子像素是由至少两种具有不同发光峰值波长的红光量子点混合而成；
    所述绿色子像素是由至少两种具有不同发光峰值波长的绿光量子点混合而成；
    所述蓝色子像素是由至少两种具有不同发光峰值波长的蓝光量子点混合而成。
  16. 根据权利要求11所述的量子点发光二极管显示器，其中所述红色子像素、所述绿色子像素、所述蓝色子像素中至少一种颜色的子像素由至少两种组成材料的对应颜色的量子点混合而成。
  17. 根据权利要求11所述的量子点发光二极管显示器，其中所述红色子像素、所述绿色子像素、所述蓝色子像素中至少一种颜色的子像素由至少两种粒径的对应颜色的量子点混合而成。
  18. 根据权利要求11所述的量子点发光二极管显示器，其中
    所述衬底基板的材料为玻璃或者柔性材料。
  19. 根据权利要求11所述的量子点发光二极管显示器，其中
    所述量子点发光二极管显示器还包括开关阵列层，所述开关阵列层包括多个薄膜晶体管，所述像素单元中的每个子像素各由一个所述薄膜晶体管驱动。
  20. 根据权利要求11所述的量子点发光二极管显示器，其中
    所述量子点发光二极管显示器还包括封装层，所述封装层与所述衬底基板通过密封胶粘结在一起。
PCT/CN2015/078833 2015-05-07 2015-05-13 一种量子点发光二极管显示器 Ceased WO2016176868A1 (zh)

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