WO2016158960A1 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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WO2016158960A1
WO2016158960A1 PCT/JP2016/060144 JP2016060144W WO2016158960A1 WO 2016158960 A1 WO2016158960 A1 WO 2016158960A1 JP 2016060144 W JP2016060144 W JP 2016060144W WO 2016158960 A1 WO2016158960 A1 WO 2016158960A1
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temperature
thermosetting adhesive
semiconductor device
semiconductor chips
manufacturing
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PCT/JP2016/060144
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English (en)
French (fr)
Japanese (ja)
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崇之 齋藤
太一 小山
広和 増渕
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デクセリアルズ株式会社
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/16145—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body

Definitions

  • the present invention relates to a method for manufacturing a semiconductor device in which a plurality of semiconductor chips are stacked using a thermosetting adhesive.
  • thermosetting adhesive Conventionally, a method of stacking and mounting semiconductor chips each having a through silicon via (TSV) using a thermosetting adhesive is known (for example, see Patent Document 1).
  • the temperature transmitted to the thermosetting adhesive decreases, and the curing is delayed.
  • the frequency of mounting displacement that occurs when the upper and lower electrode displacements occur increases.
  • the bondability tends to deteriorate.
  • the present invention has been proposed in view of such a conventional situation, and suppresses mounting displacement when a stacked semiconductor chip group is pressed with a thermocompression bonding tool, thereby obtaining good bonding properties.
  • a method for manufacturing a semiconductor device is provided.
  • the present inventors have determined a plurality of reaction rates of the thermosetting adhesive at a temperature before solder melting and a reaction rate of the thermosetting adhesive at a temperature after solder melting. It was found that mounting misalignment was suppressed when the stacked semiconductor chip groups were pressed with a thermocompression bonding tool, and good bonding properties were obtained, and the present invention was completed.
  • thermosetting adhesive has a reaction rate of 40% or more and 60% or less when the temperature is raised to 200 ° C. for 5 seconds calculated by the Ozawa method using a differential scanning calorimeter, and is 5 seconds.
  • the reaction rate when the temperature is raised to 250 ° C. is 75% or more and 85% or less.
  • the method for manufacturing a semiconductor device includes an arrangement step in which a plurality of semiconductor chips each including a through electrode and a soldered electrode formed on one surface are disposed via a thermosetting adhesive, And a curing step of curing the thermosetting adhesive by pressing a semiconductor chip group in which a plurality of thermosetting adhesives and the semiconductor chip are stacked with a thermocompression bonding tool having a temperature of 300 ° C. to 400 ° C.
  • the reaction rate when the thermosetting adhesive is raised to a temperature 30 ° C. lower than the melting point of the solder of the soldered electrode at a predetermined heating rate is 40% or more and 60% or less.
  • the reaction rate when the temperature is raised to a temperature 20 ° C. higher than the melting point of the solder at a rate of temperature rise is 75% or more and 85% or less.
  • the reaction rate of the thermosetting adhesive at a temperature before solder melting is 40% or more and 60% or less, and the reaction rate of the thermosetting adhesive at a temperature after solder melting is 75% or more and 85%.
  • FIG. 1 is a cross-sectional view schematically showing a plurality of semiconductor chips before mounting.
  • FIG. 2 is a cross-sectional view schematically showing a semiconductor chip group when mounted.
  • FIG. 3 is a graph showing the temperature of the uppermost underfill film (point A) and the temperature of the lowermost underfill film (point B).
  • the manufacturing method of the semiconductor device includes an arrangement step in which a plurality of semiconductor chips each having a through electrode and a soldered electrode formed on one surface are laminated and disposed via a thermosetting adhesive, A curing step of curing a thermosetting adhesive by pressing a semiconductor chip group in which a plurality of curable adhesives and a plurality of semiconductor chips are stacked with a thermocompression bonding tool having a temperature of 300 ° C. to 400 ° C. .
  • thermosetting adhesive has a reaction rate of 40% or more and 60% or less when the temperature is raised to 200 ° C. for 5 seconds calculated by the Ozawa method using a differential scanning calorimeter. Accordingly, the bumps can be fixed to some extent before the solder is melted, and mounting displacement can be suppressed.
  • thermosetting adhesive has a reaction rate of 75% or more and 85% or less when the temperature is raised to 250 ° C. for 5 seconds calculated by the Ozawa method using a differential scanning calorimeter.
  • the initial temperature before raising the temperature is preferably less than the solder melting temperature of the soldered electrode and substantially the same as the lowest melt viscosity attainment temperature of the thermosetting adhesive, specifically 50 ° C. to 150 ° C.
  • the temperature is 60 ° C. to 100 ° C.
  • the melting point of the solder of the soldered electrode is preferably 220 ° C. to 240 ° C.
  • the thermosetting adhesive used in the method of manufacturing a semiconductor device has a reaction rate when the temperature is raised to a temperature 30 ° C. lower than the melting point of the solder at a predetermined temperature increase rate. Is 40% or more and 60% or less, and the reaction rate when the temperature is raised to 20 ° C. higher than the melting point of the solder at a predetermined temperature increase rate is 75% or more and 85% or less.
  • the reaction rate of the thermosetting adhesive before and after melting the solder within a predetermined range, the bumps are fixed to some extent before the solder is melted to suppress mounting displacement, and the solder after the solder is melted Due to the good fluidity and wettability, good bondability can be obtained.
  • the temperature of the thermosetting adhesive of the uppermost layer and the temperature of the thermosetting adhesive of the lowermost layer are The difference is 40 ° C. or higher, preferably 40 ° C. or higher and 60 ° C. or lower, more preferably 40 ° C. or higher and 80 ° C. or lower, and further preferably 40 ° C. or higher and 100 ° C. or lower. As more semiconductor chips are stacked, the difference between the temperature of the uppermost thermosetting adhesive and the temperature of the lowermost thermosetting adhesive increases.
  • thermosetting adhesive in the above-described arrangement process, and the semiconductor chip group including the interposer is pressed with a thermocompression bonding tool in the curing process, and thermosetting is performed.
  • the adhesive may be cured.
  • thermosetting adhesive film may be used as the thermosetting adhesive, and a plurality of semiconductor chips in which the thermosetting adhesive film is bonded to the formation surface of the soldered electrode may be arranged in a stack in the arrangement step.
  • thermosetting adhesive for the first stage and the second stage.
  • thermosetting adhesive contains an acrylic curing system and an epoxy curing system, and the blending ratio of the acrylic curing system and the epoxy curing system is preferably 70:30 to 30:70.
  • the reaction rate of the thermosetting adhesive before and after melting the solder can be set within a predetermined range.
  • FIG. 1 is a cross-sectional view schematically showing a plurality of semiconductor chips before mounting
  • FIG. 2 is a cross-sectional view schematically showing a group of semiconductor chips when mounted.
  • the first to third semiconductor chips 11 to 13 of the intermediate layer and the fourth semiconductor chip 14 of the uppermost layer are formed on the interposer 10 with the first layer. -Laminated and arranged via fourth underfill films 21-24.
  • Stage 1 has a function of holding the interposer 10 and a function of heating the laminated body including the interposer 10.
  • the temperature of the stage 1 is preferably less than the melting temperature of the solder c of the soldered electrode a and substantially the same as the minimum melt viscosity attainment temperature, specifically 50 ° C. to 150 ° C., specifically 60 ° C. More preferably, the temperature is from 100 ° C to 100 ° C.
  • the interposer 10 has a function of mechanically supporting the semiconductor chip and a function of rewiring terminals on the semiconductor chip and electrically connecting them to package terminals (for example, solder balls for mounting on a printed circuit board).
  • the first to third semiconductor chips 11 to 13 of the intermediate layer include a through silicon via (TSV), a soldered electrode a formed on one surface, and an electrode b formed on the other surface. And have.
  • the silicon through electrode is an electrode that vertically penetrates the inside of the semiconductor chip, and connects the upper and lower chips.
  • the soldered electrode a is obtained by plating solder on the top of a Cu pillar, for example.
  • the solder c of the soldered electrode a is a so-called Pb-free solder, and examples of the solder c include Sn / Ag / Cu solder (melting point: 220 ° C. to 240 ° C.), Sn / Ag solder (melting point: 220 ° C.), etc. Is mentioned.
  • the electrode b is connected to a soldered electrode of another semiconductor chip, and examples of the electrode b include a Cu pillar.
  • the uppermost fourth semiconductor chip 14 has a soldered electrode a formed on one surface. Similarly to the first to third semiconductor chips 11 to 13 in the intermediate layer, the soldered electrode a is obtained by plating solder on the top of the Cu pillar, for example.
  • first to fourth underfill films 21 to 24 which are thermosetting adhesives, are preliminarily formed on one surface of the first to fourth semiconductor chips 11 to 14 where the soldered electrodes a are formed. It is pasted together. As a result, the number of steps for stacking the semiconductor chips 11 to 14 can be reduced.
  • These first to fourth semiconductor chips 11 to 14 have predetermined temperature, pressure, and time conditions that cause fluidity to occur in the first to fourth underfill films 21 to 24 but do not cause main curing. Are stacked.
  • a semiconductor in which a plurality of first to fourth underfill films 21 to 24 and a plurality of first to fourth semiconductor chips 11 to 14 are stacked in a curing step shown as a specific example The chip group is pressed with a thermocompression bonding tool at a temperature of 300 ° C. to 400 ° C. to cure the first to fourth underfill films 21 to 24.
  • the difference between the temperature of the uppermost fourth underfill film 24 and the temperature of the lowermost first underfill film 21 is preferably 40 ° C. or more. .
  • the difference between the temperature of the fourth underfill film 24 in the uppermost layer and the temperature of the first underfill film 21 in the lowermost layer increases as more semiconductor chips are stacked and arranged.
  • the solder of the soldered electrode is melted to form a metal bond, and 120 ° C. to 200 ° C. Then, the first to fourth underfill films 21 to 24 are completely cured.
  • the first temperature is preferably substantially the same as the lowest melt viscosity attainment temperature of the first to fourth underfill films 21 to 24, and is preferably 50 ° C. or higher and 150 ° C. or lower. Thereby, the hardening behavior of the underfill material can be matched with the bonding conditions, and the generation of voids can be suppressed.
  • the temperature raising rate is preferably 50 ° C./sec or more and 150 ° C./sec or less.
  • the second temperature is preferably 200 ° C. or higher and 280 ° C. or lower, more preferably 220 ° C. or higher and 260 ° C. or lower, although it depends on the type of solder.
  • the soldered electrode a and the electrode b are bonded by the solder c, and the underfill films 21 to 24 are completely cured, and the interposer 10 and the first to fourth semiconductor chips 11 to 14 are electrically connected. Can be mechanically connected.
  • the mounting misalignment when the interposer 10, the first to third semiconductor chips 11 to 13 of the intermediate layer, and the fourth semiconductor chip 14 of the uppermost layer are collectively pressure-bonded. Can be suppressed, and good bondability can be obtained.
  • the mounting tact of, for example, one-step pressing 5 sec ⁇ 4 steps 20 sec
  • the mounting tact of batch pressing 10 sec. can do.
  • this method for example, by mounting for 10 seconds, it is possible to obtain better solderability than conventional.
  • a plurality of first to fourth semiconductor chips 11 to 14 are stacked on the interposer 10 via the underfill films 21 to 24 and are collectively pressed.
  • the interposer 10 and the first semiconductor are bonded together.
  • a plurality of second to fourth semiconductor chips 12 to 14 may be stacked on the first semiconductor chip 11 and collectively pressure-bonded.
  • a plurality of four-stage semiconductor chips are stacked and pressure-bonded together, a plurality of four-stage semiconductor chips are stacked and pressure-bonded together to obtain a stack of eight-stage semiconductor chips. Also good.
  • the underfill film is a film formed from an underfill material which is a thermosetting adhesive.
  • the underfill material contains an acrylic curing system and an epoxy curing system.
  • the blending ratio of the acrylic curing system and the epoxy curing system is preferably 70:30 to 30:70.
  • the acrylic curing system preferably contains (meth) acrylate and an organic peroxide.
  • (meth) acrylate is meant to include acrylic acid ester (acrylate) and methacrylic acid ester (methacrylate).
  • the (meth) acrylate monofunctional (meth) acrylate, bifunctional or higher (meth) acrylate can be used.
  • the monofunctional (meth) acrylate include methyl (meth) acrylate, ethyl (meth) acrylate, n-propyl (meth) acrylate, i-propyl (meth) acrylate, and n-butyl (meth) acrylate.
  • Bifunctional or higher (meth) acrylates include fluorene type (meth) acrylate, bisphenol F-EO modified di (meth) acrylate, bisphenol A-EO modified di (meth) acrylate, trimethylolpropane PO modified (meth) acrylate, A polyfunctional urethane (meth) acrylate etc. can be mentioned. These (meth) acrylates may be used alone or in combination of two or more. Among these, in this Embodiment, a fluorene type (meth) acrylate is used suitably.
  • organic peroxides examples include peroxyketals, peroxyesters, hydroperoxides, dialkyl peroxides, diacyl peroxides, and peroxydicarbonates. These organic peroxides may be used alone or in combination of two or more. Among these, peroxyketal is preferably used in the present embodiment.
  • the epoxy curing system preferably contains an epoxy compound and an acid anhydride.
  • the epoxy compound include dicyclopentadiene type epoxy resin, glycidyl ether type epoxy resin, glycidyl amine type epoxy resin, bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, spiro ring type epoxy resin, Naphthalene type epoxy resin, biphenyl type epoxy resin, terpene type epoxy resin, tetrabromobisphenol A type epoxy resin, cresol novolac type epoxy resin, phenol novolac type epoxy resin, ⁇ -naphthol novolak type epoxy resin, brominated phenol novolak type epoxy resin And so on.
  • These epoxy compounds may be used alone or in combination of two or more. Among these, in this Embodiment, it is preferable to use a polyfunctional novolak-type epoxy compound from the point of high adhesiveness and heat resistance.
  • the acid anhydride has a flux function for removing the oxide film on the solder surface, excellent connection reliability can be obtained.
  • the acid anhydride include aliphatic acid anhydrides such as tetrapropenyl succinic anhydride and dodecenyl succinic anhydride, alicyclic acid anhydrides such as hexahydrophthalic anhydride and methyltetrahydrophthalic anhydride, phthalic anhydride, and anhydride.
  • aromatic acid anhydrides such as trimellitic acid and pyromellitic anhydride.
  • These epoxy curing agents may be used alone or in combination of two or more.
  • alicyclic acid anhydrides are preferably used.
  • the underfill material preferably contains a film forming resin.
  • the film-forming resin corresponds to a high-molecular weight resin having a weight average molecular weight of 10 ⁇ 10 4 or more, and preferably has a weight average molecular weight of 10 ⁇ 10 4 to 100 ⁇ 10 4 from the viewpoint of film formation.
  • various resins such as an acrylic rubber polymer, a phenoxy resin, an epoxy resin, a modified epoxy resin, and a urethane resin can be used. These film forming resins may be used alone or in combination of two or more. Among these, in the present embodiment, an acrylic rubber polymer is preferably used from the viewpoint of film strength and adhesiveness.
  • the underfill material preferably contains a curing accelerator.
  • curing accelerators include imidazoles such as 2-methylimidazole, 2-ethylimidazole, 2-ethyl-4-methylimidazole, 1,8-diazabicyclo (5,4,0) undecene-7 salt (DBU salt), tertiary amines such as 2- (dimethylaminomethyl) phenol, phosphines such as triphenylphosphine, and metal compounds such as tin octylate.
  • imidazoles such as 2-methylimidazole, 2-ethylimidazole, 2-ethyl-4-methylimidazole, 1,8-diazabicyclo (5,4,0) undecene-7 salt (DBU salt)
  • tertiary amines such as 2- (dimethylaminomethyl) phenol
  • phosphines such as triphenylphosphine
  • metal compounds such as tin oct
  • the underfill material preferably contains an inorganic filler.
  • an inorganic filler By containing the inorganic filler, the fluidity of the resin layer at the time of pressure bonding can be adjusted.
  • the inorganic filler silica, talc, titanium oxide, calcium carbonate, magnesium oxide, or the like can be used.
  • epoxy-based, amino-based, mercapto-sulfide-based, ureido-based silane coupling agents may be added as necessary.
  • the underfill material having such a structure has a reaction rate of 40% or more when the temperature is raised to 200 ° C. for 5 seconds calculated by the Ozawa method using a differential scanning calorimeter (DSC).
  • the reaction rate when the temperature is raised to 250 ° C. in 5 seconds is 75% or more and 85% or less.
  • the reaction rate calculation method by DSC-Ozawa method is as follows. First, the calorific value of the entire peak, the peak temperature, and the rate of change to the peak top are calculated from the uniform temperature rise data for the sample. Next, an Ozawa plot is created by taking the common logarithmic value of the heating rate on the vertical axis and the inverse value of the peak temperature on the horizontal axis, and the activation energy, frequency factor, and reaction order for the sample are obtained. Then, by creating a reaction prediction diagram from the activation energy, frequency factor, and reaction order, the reaction rate when the temperature is raised to a predetermined temperature at a predetermined temperature increase rate can be calculated.
  • the underfill material has a reaction rate of 40% or more and 60% or less when the temperature is raised to a temperature 30 ° C. lower than the melting point of the solder at a predetermined temperature increase rate, and at a predetermined temperature increase rate.
  • the reaction rate when the temperature is raised to 20 ° C. higher than the melting point of the solder is 75% or more and 85% or less.
  • Example> Examples of the present invention will be described below.
  • an underfill film was prepared, and the reaction rate when the temperature was increased to a predetermined temperature at a predetermined temperature increase rate by the DSC-Ozawa method was calculated.
  • the three-dimensional mounting body was produced using the underfill film, and the mounting shift
  • the present invention is not limited to these examples.
  • the reaction rate at a predetermined temperature was calculated according to the following procedure. (1) Using a differential scanning calorimeter (DSC), according to the description of the DSC Ozawa Software manual attached to the apparatus, constant speed heating data (heating speed 5 ° C./min for each sample) , 10 ° C./min, 20 ° C./min), the calorific value of the entire peak, the peak temperature, and the rate of change to the peak top were obtained. The rate of change is a value obtained by dividing the amount of heat up to the peak temperature by the amount of heat of the entire peak.
  • DSC differential scanning calorimeter
  • thermocompression bonding tool Pressing and connecting with a through silicon via (TSV), a three-dimensional package was produced. The following were used for the interposer, the intermediate layer semiconductor chip, and the uppermost layer semiconductor chip.
  • three stages of the intermediate layer semiconductor chip bonded with the underfill film and one uppermost layer semiconductor chip bonded with the underfill film are 1 Laminated and arranged in stages.
  • FIG. 3 shows the uppermost layer when a semiconductor chip group including three intermediate semiconductor chips stacked on the interposer and the uppermost semiconductor chip is pressed with a thermocompression bonding tool at a temperature of 350 ° C. for 30 seconds. It is a graph which shows the temperature of the underfill film (point A) of and the temperature of the underfill film (point B) of the lowest layer. Point A and point B correspond to the fourth underfill film 24 and the first underfilm 21 in FIGS. 1 and 2, respectively. Further, the temperature of the underfill film is obtained by measuring the actual temperature with a thermocouple.
  • the temperature of the underfill film at point A between the uppermost semiconductor chip and the intermediate semiconductor chip was about 250 ° C. in 5 seconds.
  • the temperature of the underfill film at point B between the interposer and the semiconductor chip of the intermediate layer was about 200 ° C. in 5 seconds. That is, the temperature difference between the point A and point B under films was about 50 ° C., and this temperature difference hardly changed even after 30 seconds.
  • peeled PET Polyethylene terephthalate
  • underfill film having a thickness of 20 ⁇ m (cover peeled PET (25 ⁇ m) / underfill).
  • Example 1 As shown in Table 1, 40 parts by mass of an acrylic rubber polymer (product name: Teisan Resin SG-P3, manufactured by Nagase ChemteX Corporation), bifunctional fluorene type acrylate (product name: Ogsol EA-0200, Osaka Gas Chemical Co., Ltd.) 68 parts by mass, organic peroxide (product name: Perhexa V, NOF Corporation) 2 parts by mass, novolac type epoxy compound (tetrafunctional) (product name: JER1031S, Mitsubishi Chemical Corporation) 20 parts by mass, alicyclic 10 parts by mass of a formula acid anhydride (product name: JER1031S, Mitsubishi Chemical Co., Ltd.), 1 part by mass of DBU-based tetraphenylborate salt (product name: U-CAT-5002, San Apro Co., Ltd.), and filler (product name: Aerosil) RY200, Nippon Aerosil Co., Ltd.) is blended in 15 parts by mass, and the blending ratio
  • the resin composition of the over fill film was prepared.
  • the reaction rate when the temperature was raised to 200 ° C. in 5 seconds calculated by the DSC-Ozawa method was 60%, and the reaction rate when the temperature was raised to 250 ° C. in 5 seconds was 85%. Except this, it carried out similarly to the comparative example 1, and produced the underfill film.
  • the evaluation of mounting displacement was “good” and the evaluation of bondability was “good”.
  • Example 2 As shown in Table 1, 40 parts by mass of an acrylic rubber polymer (product name: Teisan Resin SG-P3, manufactured by Nagase ChemteX Corporation), bifunctional fluorene type acrylate (product name: Ogsol EA-0200, Osaka Gas Chemical Co., Ltd.) 49 parts by weight, organic peroxide (Product name: Perhexa V, NOF Corporation) 1 part, Novolac epoxy compound (tetrafunctional) (Product name: JER1031S, Mitsubishi Chemical Corporation) 30 parts by weight, alicyclic 20 parts by mass of a formula acid anhydride (product name: JER1031S, Mitsubishi Chemical Co., Ltd.), 1 part by mass of DBU-based tetraphenylborate salt (product name: U-CAT-5002, San Apro Co., Ltd.), and filler (product name: Aerosil) RY200, Nippon Aerosil Co., Ltd.) is blended in an amount of 15 parts by mass, and the blending
  • the reaction rate when the temperature was raised to 200 ° C. in 5 seconds calculated by the DSC-Ozawa method was 50%, and the reaction rate when the temperature was raised to 250 ° C. in 5 seconds was 80%. Except this, it carried out similarly to the comparative example 1, and produced the underfill film.
  • the evaluation of mounting displacement was ⁇ , and the evaluation of bondability was ⁇ .
  • Example 3 As shown in Table 1, 40 parts by mass of an acrylic rubber polymer (product name: Teisan Resin SG-P3, manufactured by Nagase ChemteX Corporation), bifunctional fluorene type acrylate (product name: Ogsol EA-0200, Osaka Gas Chemical Co., Ltd.) 29 parts by mass, 1 part by mass of organic peroxide (product name: Perhexa V, NOF Corporation), 40 parts by mass of novolac type epoxy compound (tetrafunctional) (product name: JER1031S, Mitsubishi Chemical Corporation), alicyclic ring Formula acid anhydride (product name: JER1031S, Mitsubishi Chemical Co., Ltd.) 30 parts by mass, DBU tetraphenylborate salt (product name: U-CAT-5002, San Apro Co., Ltd.) 1 part by mass, and filler (product name: Aerosil) RY200, Nippon Aerosil Co., Ltd.) is blended in an amount of 15 parts by mass, and the blending ratio
  • the reaction rate when the temperature was raised to 200 ° C. in 5 seconds calculated by the DSC-Ozawa method was 40%, and the reaction rate when the temperature was raised to 250 ° C. in 5 seconds was 75%. Except this, it carried out similarly to the comparative example 1, and produced the underfill film.
  • the evaluation of mounting displacement was “good” and the evaluation of bondability was “good”.
  • ⁇ Comparative example 2> As shown in Table 1, 40 parts by mass of an acrylic rubber polymer (product name: Teisan Resin SG-P3, manufactured by Nagase ChemteX Corporation), novolac-type epoxy compound (tetrafunctional) (product name: JER1031S, Mitsubishi Chemical Corporation) 60 1 part by mass, 40 parts by mass of alicyclic acid anhydride (product name: MH-700, Shin Nippon Rika Co., Ltd.), 1 part of DBU tetraphenylborate salt (product name: U-CAT-5002, San Apro Co., Ltd.) Part and filler (product name: Aerosil RY200, Nippon Aerosil Co., Ltd.) 15 parts by mass, and a resin composition of an underfill film in which the blending ratio of the acrylic curing system and the epoxy curing system is 0: 100 is prepared.
  • an acrylic rubber polymer product name: Teisan Resin SG-P3, manufactured by Nagase ChemteX Corporation
  • the evaluation of mounting displacement was x, and the evaluation of bondability was ⁇ .
  • the reaction rate when the temperature was raised to 200 ° C. for 5 seconds calculated by the DSC-Ozawa method was 70%, and the reaction rate when the temperature was raised to 250 ° C. for 5 seconds was 95%.
  • the reaction rate when the temperature was raised to 200 ° C. in 5 seconds calculated by the DSC-Ozawa method was 30%, and the reaction rate when the temperature was raised to 250 ° C. in 5 seconds.
  • the ratio is 70%, mounting displacement occurred.
  • the reaction rate when the temperature was raised to 200 ° C. in 5 seconds calculated by the DSC-Ozawa method was 40% to 60%, and the temperature was raised to 250 ° C. in 5 seconds.
  • an underfill film with a reaction rate of 75% to 85% was used, mounting displacement was suppressed and good bondability was obtained.

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WO2013133015A1 (ja) * 2012-03-07 2013-09-12 東レ株式会社 半導体装置の製造方法および半導体装置の製造装置
JP2013225642A (ja) * 2011-11-11 2013-10-31 Sumitomo Bakelite Co Ltd 半導体装置の製造方法
JP2015056464A (ja) * 2013-09-11 2015-03-23 デクセリアルズ株式会社 アンダーフィル材、及びこれを用いた半導体装置の製造方法
JP2015056479A (ja) * 2013-09-11 2015-03-23 デクセリアルズ株式会社 アンダーフィル材、及びこれを用いた半導体装置の製造方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013225642A (ja) * 2011-11-11 2013-10-31 Sumitomo Bakelite Co Ltd 半導体装置の製造方法
WO2013133015A1 (ja) * 2012-03-07 2013-09-12 東レ株式会社 半導体装置の製造方法および半導体装置の製造装置
JP2015056464A (ja) * 2013-09-11 2015-03-23 デクセリアルズ株式会社 アンダーフィル材、及びこれを用いた半導体装置の製造方法
JP2015056479A (ja) * 2013-09-11 2015-03-23 デクセリアルズ株式会社 アンダーフィル材、及びこれを用いた半導体装置の製造方法

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