WO2016152222A1 - 赤外線温度センサ及び赤外線温度センサを用いた装置 - Google Patents

赤外線温度センサ及び赤外線温度センサを用いた装置 Download PDF

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Publication number
WO2016152222A1
WO2016152222A1 PCT/JP2016/051665 JP2016051665W WO2016152222A1 WO 2016152222 A1 WO2016152222 A1 WO 2016152222A1 JP 2016051665 W JP2016051665 W JP 2016051665W WO 2016152222 A1 WO2016152222 A1 WO 2016152222A1
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WIPO (PCT)
Prior art keywords
infrared
temperature sensor
substrate
pattern
thermal element
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PCT/JP2016/051665
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English (en)
French (fr)
Japanese (ja)
Inventor
野尻　俊幸
武士 布施
正幸 碓井
亮 細水
Original Assignee
Ｓｅｍｉｔｅｃ株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ｓｅｍｉｔｅｃ株式会社 filed Critical Ｓｅｍｉｔｅｃ株式会社
Priority to JP2016538829A priority Critical patent/JP6030273B1/ja
Priority to CN201680016787.8A priority patent/CN107407603B/zh
Priority to KR1020177026416A priority patent/KR102610102B1/ko
Publication of WO2016152222A1 publication Critical patent/WO2016152222A1/ja

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/02—Details
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/10—Photometry, e.g. photographic exposure meter by comparison with reference light or electric value provisionally void
    • G01J1/20—Photometry, e.g. photographic exposure meter by comparison with reference light or electric value provisionally void intensity of the measured or reference value being varied to equalise their effects at the detectors, e.g. by varying incidence angle
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices

Definitions

  • the present invention relates to an infrared temperature sensor that detects infrared rays from a detection object and measures the temperature of the detection object, and an apparatus using the infrared temperature sensor.
  • a temperature sensor for measuring the temperature of an object to be detected such as a heat fixing roller used in a fixing device of a copying machine
  • infrared light from the object to be detected is detected in a non-contact manner and the temperature of the object to be detected is measured.
  • An infrared temperature sensor is used.
  • Such an infrared temperature sensor is provided with a temperature compensating thermal element in addition to the infrared detecting thermal element in order to compensate for a change in ambient temperature.
  • an infrared reflective film is provided (see Patent Document 1), and a heat collection pattern is used to measure the temperature of the heat source with high sensitivity. And the like (see Patent Document 2) and those that attempt to make the temperature change of the infrared temperature sensor uniform as a whole (see Patent Document 3) have been proposed.
  • the present invention has been made in view of the above problems, and an object of the present invention is to provide a highly reliable infrared temperature sensor and an apparatus using the infrared temperature sensor that can improve performance.
  • An infrared temperature sensor includes an opening, a light guide portion formed to guide infrared rays, and a shielding portion having a shielding wall and shielded from infrared rays.
  • a main body having a partition wall forming an inner peripheral wall of the light guide section and the shielding section, a substrate disposed to face the light guide section and the shielding section of the main body, and disposed on the substrate.
  • the infrared detecting thermal element disposed at a position corresponding to the light guide section, and disposed on the substrate, spaced apart from the infrared detecting thermal element, and disposed at a position corresponding to the shielding section.
  • the infrared temperature sensor is preferably used for a surface mount type, but is not limited to a surface mount type. Moreover, a flexible wiring board and a rigid wiring board can be used for a board
  • a chip thermistor formed of a ceramic semiconductor is preferably used, but not limited thereto, a thermocouple, a resistance temperature detector, or the like can be used.
  • the infrared temperature sensor according to claim 2 is the infrared temperature sensor according to claim 1, wherein the opening does not protrude from the surface of the main body, and the infrared detection thermal element and the temperature compensation thermal element on the substrate.
  • the partition wall of the main body is in contact with the boundary between the main body and the boundary.
  • the infrared temperature sensor according to claim 3 wherein the partition wall is in contact with the substrate at a certain distance from an inner peripheral wall of the light guide unit and the shielding unit to an outer shape of the heat collection pattern.
  • the infrared temperature sensor according to claim 4 is the infrared temperature sensor according to any one of claims 1 to 3, wherein the wiring pattern includes a wiring pattern to which an infrared detection thermal element is connected and a temperature compensating sensor.
  • the wiring pattern to which the thermosensitive element is connected is characterized by having the same pattern.
  • the infrared temperature sensor according to claim 5 is the infrared temperature sensor according to any one of claims 1 to 4, wherein the heat collection pattern is formed in a meandering pattern. .
  • the infrared temperature sensor according to claim 6 is the infrared temperature sensor according to any one of claims 1 to 4, wherein at least one or more openings are formed in the heat collection pattern.
  • the infrared temperature sensor according to claim 7 is the infrared temperature sensor according to any one of claims 1 to 4, wherein the heat collection pattern has a lattice pattern shape in which a plurality of substantially square openings are formed. It is a pattern.
  • the infrared temperature sensor according to claim 8 is the infrared temperature sensor according to any one of claims 1 to 4, wherein the heat collection pattern has a polka dot pattern shape in which a plurality of substantially circular openings are formed. It is a pattern.
  • the infrared temperature sensor according to claim 9 is the infrared temperature sensor according to any one of claims 6 to 8, wherein a conductor is not formed for a portion where the conductor is formed in the heat collection pattern.
  • the ratio of the portion is 20 to 80%.
  • the infrared temperature sensor according to claim 10 is the infrared temperature sensor according to any one of claims 1 to 9, wherein the conductor film is oxidized in the heat collection pattern. Infrared light can be absorbed by subjecting the conductor film of the heat collecting pattern to oxidation treatment, and infrared light receiving energy increases.
  • An apparatus using the infrared temperature sensor according to claim 11 is provided with the infrared temperature sensor according to any one of claims 1 to 10.
  • the infrared temperature sensor can be provided and applied to various devices for detecting the temperature of, for example, a fixing device of a copying machine, a battery unit, a capacitor, an IH cooking heater, and an article in a refrigerator.
  • the specially applied device is not limited.
  • the present invention it is possible to improve the performance and provide a highly reliable infrared temperature sensor and a device using this infrared temperature sensor.
  • FIG. 3 is a cross-sectional view taken along line AA in FIG.
  • FIG. 3 is a cross-sectional view taken along line BB in FIG.
  • FIG. 3 is a cross-sectional view taken along the line CC in FIG.
  • FIG. 7 is a cross-sectional view of the case along the line XX in FIG. 6.
  • FIG. 8A is a sectional view corresponding to FIG. 5 in which a lid member is provided on the back side of the case, and FIG.
  • FIG. 8B is a perspective view showing the lid member (Modification 1).
  • FIG. 7 is a cross-sectional view corresponding to FIG. 6, provided with a ventilation portion that allows ventilation with the outside (Modification 2). It is a top view which shows a wiring pattern (modification 3). It is a perspective view which decomposes
  • FIG. 7 is a cross-sectional view showing the infrared temperature sensor and corresponding to FIG. 6.
  • FIG. 15 is a cross-sectional view of the case along the line XX in FIG. 14. It is a top view which shows an adhesive sheet. It is a top view which shows a wiring pattern. Similarly, it is a top view which shows a wiring pattern.
  • FIGS. 1 is a perspective view showing an infrared temperature sensor
  • FIG. 2 is a plan view showing the infrared temperature sensor
  • FIG. 3 is a rear view showing the infrared temperature sensor.
  • 4 is a sectional view taken along line AA in FIG. 2
  • FIG. 5 is a sectional view taken along line BB in FIG. 2
  • FIG. 6 is a sectional view taken along line CC in FIG. 7 is a cross-sectional view of the main body taken along line XX in FIG.
  • FIGS. 8 to 10 show modifications.
  • symbol is attached
  • the infrared temperature sensor 1 includes a main body 2, a substrate 3, an infrared detecting thermal element 4 and a temperature compensating thermal element 5 disposed on the substrate 3.
  • a wiring pattern 31 formed on the substrate 3 and a mounting terminal 32 are provided.
  • the infrared temperature sensor 1 is a surface mount type and is configured to be suitable for surface mount.
  • the main body 2 is formed in a substantially rectangular parallelepiped shape with a metal material having thermal conductivity, for example, iron, and includes a light guide portion 21, a shielding portion 22, and an accommodation space portion 23.
  • the main body 2 has a miniaturized size in which the length in the vertical direction and the length in the horizontal direction are 8 mm to 13 mm and the height is 2 mm to 5 mm.
  • the main body 2 has an opening 21a that does not protrude from the surface, which will be described later, and is entirely oxidized and blackened by heat treatment.
  • the main body 2 is heat-treated at a high temperature of about 400 ° C. to 1000 ° C., whereby an oxide film is formed on the surface of the main body 2 and blackened.
  • the thickness of the oxide film is preferably 10 ⁇ m or less, and specifically 3 ⁇ m.
  • the emissivity is preferably 0.8 or more, and an emissivity of 0.8 to 0.95 can be obtained by the blackening treatment.
  • the material of the main body is made of aluminum, aluminum alloy, zinc alloy or the like having a thermal conductivity of 96 W / m ⁇ K or more. . This is because if there is a protrusion, a temperature difference occurs in the main body, so that a material with poor heat conduction cannot be used.
  • the infrared temperature sensor is installed at a very short distance of about 5 mm with respect to the heat roller of the heat source.
  • the infrared temperature sensor having a structure in which the opening protrudes has a problem that the infrared temperature sensor cannot function correctly unless it is an expensive material with good heat conduction.
  • the opening 21a does not protrude from the surface and does not have a protrusion, so that the main body 2 can be used even when the thermal conductivity is 10 W / m ⁇ K or more. It is possible to use materials such as iron, stainless steel, and resin having good thermal conductivity containing filler.
  • the material forming the main body 2 is not particularly limited as long as it has a thermal conductivity of 10 W / m ⁇ K or more.
  • the metal material iron, nickel, chromium, cobalt, manganese, copper, titanium, molybdenum, or an alloy containing at least one of these metals can be used.
  • the ceramic material a material having good thermal conductivity such as alumina or aluminum nitride may be selected.
  • the resin material generally has poor heat conduction, a material in which a thermoplastic resin or a thermosetting resin contains a filler such as carbon, metal, or ceramic having heat conductivity is used.
  • a metal material or a ceramic material with a low emissivity can be used. Since the emissivity of the resin itself is high, the surface of the resin becomes black.
  • the main body 2 is formed with a light guide portion 21 and a shielding portion 22.
  • the light guide portion 21 has an opening 21 a on one surface side (front side) of the main body 2 and is formed so as to guide infrared rays.
  • the shielding part 22 has a shielding wall 22a on one side (front side) and is formed so as to shield infrared rays.
  • the light guide 21 is formed as a cylindrical through-hole through which the opening 21a penetrates from the front side to the back side, and the back side is opened.
  • the inner peripheral surface of the light guide 21 is as described above.
  • An oxide film is formed by oxidation to form a black body.
  • the opening 21a is formed in substantially the same plane as the surface without protruding from the surface on the front side of the main body 2.
  • the opening 21a is horizontally long and has a substantially rectangular shape with rounded corners.
  • the length in the longitudinal direction is 3 mm.
  • the length is 6 mm, specifically 6 mm, and the length in the short direction is 1 mm to 2.5 mm, specifically 2 mm. Therefore, the dimension of the opening 21a is in the range of 1 mm to 6 mm, and the maximum dimension is set to 6 mm or less.
  • the accuracy of the processing dimension of the opening 21a can be improved.
  • a dimensional accuracy of ⁇ 0.05 mm or less can be obtained by setting the size of the opening 21 a to 6 mm or less. This also coincides with the normal dimension tolerance shown in JIS (Japanese Industrial Standards), for example.
  • JIS Japanese Industrial Standards
  • the tolerance ratio with respect to the dimension of the opening 21a exceeds 5%, so it is difficult to ensure high accuracy of the dimension of the opening 21a. .
  • the shape of the opening 21a is not particularly limited. You may form in circular shape, elliptical shape, polygonal shape, etc. It can be appropriately selected depending on the form of the measurement part of the detection object.
  • the shield part 22 is disposed adjacent to the light guide part 21 and is formed in a substantially symmetrical form with the boundary between the light guide part 21 and the shield part 22 as the central axis.
  • the shielding part 22 has a shielding wall 22a on the front side, and extends to the back side in the same shape as the light guide part 21, that is, in a substantially rectangular shape with rounded corners having the same shape as the opening part 21a. Forming.
  • the space 22b is a concave cavity, and the back side facing the shielding wall 22a is opened.
  • the cross-sectional shape of the portion of the shielding portion 22 that does not include the shielding wall 22 a has the boundary between the light guide portion 21 and the shielding portion 22 as the central axis C It has a substantially symmetrical form and is integrally formed. In other words, except for the opening 21a of the light guide 21 and the shielding wall 22a of the shield 22, the light guide 21 side and the shield 22 side are formed in substantially the same shape.
  • the light guide portion 21 and the shielding portion 22 have a certain space area formed by the surrounding partition walls 24.
  • the inner peripheral walls of the light guide portion 21 and the shielding portion 22 are formed by the partition walls 24.
  • the partition wall 24 at the boundary between the light guide portion 21 and the shielding portion 22 is referred to as a central wall 24a, and the other partition wall 24 is referred to as a peripheral wall 24b.
  • the accommodating space 23 is formed on the back side inside the main body 2. Specifically, the accommodation space portion 23 is formed in a substantially rectangular parallelepiped concave shape, and communicates with the openings on the back side of the light guide portion 21 and the shielding portion 22.
  • the substrate 3 is an insulating film that absorbs infrared rays formed in a substantially rectangular shape, and is a flexible wiring substrate (FPC) having flexibility.
  • the substrate 3 is disposed on the other surface side (back side) of the main body 2 so as to face the light guide portion 21 and the shielding portion 22.
  • substrate 3 is bend
  • the substrate 3 may be formed into a shape along the inner wall of the accommodation space 23.
  • the substrate 3 is provided with an infrared detecting thermal element 4 and a temperature compensating thermal element 5 on one surface (back side in FIGS. 4 to 6) of the insulating base material. Similarly, on one surface, a conductor wiring pattern 31 and a mounting terminal 32 that is electrically connected to the wiring pattern 31 and located on the end side are formed.
  • a resin made of a polymer material such as polyimide, polyethylene, liquid crystal polymer, fluorine, silicon, polyester, polycarbonate, PPS (polyphenylene sulfide) can be used.
  • carbon black or an inorganic pigment one or more of chrome yellow, petal, titanium white, and ultramarine may be mixed and dispersed in these resins to use a material that can absorb infrared rays of almost all wavelengths.
  • the substrate 3 since the substrate 3 is bent along the inner wall of the housing space 23 and disposed by thermal welding, the substrate 3 is made of a material such as polyimide, polyethylene, or liquid crystal polymer that can be thermally welded. It has been.
  • the wiring pattern 31 has a rectangular electrode terminal 31a on one end side, and a narrow pattern extends from the electrode terminal 31a as a heat collecting pattern in a meander-like pattern, A rectangular mounting terminal 32, specifically, a land for soldering is formed at the terminal portion on the other end side.
  • the meandering pattern as the heat collection pattern forms part of the wiring pattern 31.
  • the infrared detecting thermal element 4 and the temperature compensating thermal element 5 are formed by the meandering pattern. The temperature is maintained, the output can be increased, and the sensitivity can be improved.
  • a pair of wiring patterns 31 of the same pattern are arranged so that the electrode terminals 31a face each other, and the infrared detecting thermal element 4 or the temperature compensating thermal element 5 is arranged and connected.
  • the two pairs of wiring patterns 31 are arranged substantially parallel to each other.
  • the wiring pattern 31dt to which the infrared detection thermal element 4 is connected and the wiring pattern 31cp to which the temperature compensation thermal element 5 is connected are in the same pattern, and are not connected to each other.
  • the element 4 and the temperature compensating thermal element 5 are individually connected.
  • a cover layer 33 which is an insulating layer made of a resin film typified by a polyimide film, resist ink, or the like is formed on the wiring pattern 31.
  • the cover layer 33 is formed so as to cover the wiring pattern 31, but the electrode terminal 31 a and the mounting terminal 32 are exposed portions that are not covered by the cover layer 33.
  • the cover layer 33 can absorb infrared rays of almost all wavelengths by mixing and dispersing carbon black or inorganic pigment (one or more of chrome yellow, petal, titanium white, ultramarine) in polyimide film and resist ink. Materials may be used.
  • carbon black or inorganic pigment one or more of chrome yellow, petal, titanium white, ultramarine
  • the cover layer 33 By using an infrared absorbing material for the cover layer 33, the received light energy is increased and the sensitivity can be improved.
  • the wiring pattern 31 is clearly shown in a state where it can be seen through the substrate 3 in FIG. 2 and through the cover layer 33 in FIG.
  • Such a wiring pattern 31 is formed by patterning with a rolled copper foil, an electrolytic copper foil or the like, and the mounting terminals 32 are provided with nickel plating, gold plating or solder in order to reduce connection resistance and prevent corrosion.
  • Plating treatment such as plating is performed.
  • the infrared detecting thermal element 4 detects infrared rays from the detection target and measures the temperature of the detection target.
  • the temperature-compensating thermal element 5 detects the ambient temperature and measures the ambient temperature.
  • the infrared detecting thermal element 4 and the temperature compensating thermal element 5 are composed of thermal elements having at least substantially equal temperature characteristics, connected between the opposing electrode terminals 31a of the wiring pattern 31, and spaced apart from each other. Mounting is arranged.
  • the infrared detecting thermal element 4 and the temperature compensating thermal element 5 are chip thermistors in which terminal electrodes are formed at both ends.
  • this thermistor there are thermistors of the NTC type, the PTC type, the CTR type, etc. In this embodiment, for example, an NTC type thermistor is adopted.
  • the infrared detecting thermal element 4 and the temperature compensating thermal element 5 ceramic semiconductors containing metal oxides or metal nitrides of Mn, Co, Ni, and Fe, that is, Mn—Co—Ni. -A thin film thermistor element made of an Fe-based material is used. Since this ceramic semiconductor has a high B constant which is a temperature coefficient, it is possible to detect a temperature change of the substrate 3 that absorbs infrared rays with high sensitivity.
  • the ceramic semiconductor desirably has a crystal structure having a cubic spinel phase as the main phase.
  • the ceramic semiconductor since there is no anisotropy and no impurity layer, the electrical characteristics within the ceramic sintered body. Variation is small, and highly accurate measurement is possible when using a plurality of infrared temperature sensors.
  • the environment resistance is high.
  • a single-phase crystal structure composed of a cubic spinel phase is most desirable.
  • the infrared detecting thermal element 4 and the temperature compensating thermal element 5 are selected from thermistor elements and thin film thermistors obtained from the same wafer formed of ceramics semiconductors by resistance values within a predetermined tolerance. It is preferable that
  • the relative error of the B constant is small between the pair of infrared detecting thermal element 4 and temperature compensating thermal element 5, and at the same time, the temperature difference between the two detecting the temperature can be detected with high accuracy.
  • the B constant selection operation and the resistance value adjusting step are not required, and the productivity can be improved.
  • the thermistor elements used in the infrared detecting thermal element 4 and the temperature compensating thermal element 5 may be any of a bulk thermistor, a laminated thermistor, a thick film thermistor, and a thin film thermistor, for example.
  • the infrared detection thermal element 4 is disposed at a position corresponding to the light guide 21, and the temperature compensation thermal element 5. Is disposed at a position corresponding to the shielding portion 22.
  • the central wall 24a and the peripheral wall 24b which are the partition walls 24 in the main body 2, are arranged in contact with each other so as to be thermally coupled onto the surface of the substrate 3.
  • the central wall 24 a faces and contacts the boundary portion between the infrared detecting thermal element 4 and the temperature compensating thermal element 5 on the surface of the substrate 3.
  • the peripheral wall 24b is also in contact with the surface of the substrate 3 in the periphery of the thermal element 4 for detecting infrared rays and the thermal element 5 for temperature compensation. Therefore, the partition wall 24 in the main body 2 is in contact with the surface of the substrate 3 except for the regions of the light guide portion 21 and the shielding portion 22. This contact is a contact state in which the contact areas on the light guide 21 side and the shielding unit 22 side are substantially the same, and are in substantially the same state.
  • the partition wall 24 is spaced on the surface of the substrate 3 by a predetermined dimension d from the inner peripheral walls of the light guide portion 21 and the shielding portion 22 to the outer shape of the wiring pattern 31. Touching. Further, the mounting terminals 32 formed on the end side on the substrate 3 are disposed on the back side end of the peripheral wall of the main body 2.
  • the wiring pattern 31dt to which the infrared detecting thermal element 4 is connected and the wiring pattern 31cp to which the temperature compensating thermal element 5 is connected are arranged substantially in parallel.
  • the light guide portion 21 and the shielding portion 22 are arranged in parallel corresponding to the wiring patterns 31dt and 31cp.
  • the infrared temperature sensor 1 is mounted on a mounting board as the circuit board 10.
  • a predetermined wiring pattern is formed on the surface side of the mounting substrate, and the connection terminal 11 to which the mounting terminal 32 of the infrared temperature sensor 1 is connected is formed. Therefore, the mounting terminal 32 of the infrared temperature sensor 1 is electrically connected to the connection terminal 11 of the mounting substrate by soldering or the like.
  • this connection means is not limited to a particular one. For example, a conductive adhesive or the like may be used, and any means may be used as long as electrical connection is possible.
  • the infrared rays that have reached the substrate 3 are absorbed by the substrate 3 and converted into thermal energy.
  • the dimensional accuracy of the opening 21a is as high as ⁇ 0.05 mm, and the opening 21a is oxidized and blackened by heat treatment. Since the thickness of the oxide film is extremely thin and is 10 ⁇ m or less, the influence on the dimensional accuracy of the opening is extremely small.
  • the infrared temperature sensor 1 can suppress variations in the output characteristics of the individual infrared temperature sensors without requiring an adjustment member for adjusting the amount of received infrared light energy.
  • the size of the opening 21a is 6 mm
  • the total dimensional accuracy of the opening size and the film thickness of the oxide film is ⁇ 0.05 mm or less, and the error ratio is high accuracy of 1% or less.
  • the converted thermal energy is transmitted to the infrared detecting thermal element 4 directly below the substrate 3 to increase the temperature of the infrared detecting thermal element 4.
  • the infrared detection thermal element 4 and the temperature compensation thermal element 5 are ceramic semiconductors having at least substantially equal temperature characteristics, and the resistance value of the infrared detection thermal element 4 changes due to infrared rays from the detection target.
  • infrared rays are shielded by the shielding wall 22a of the shielding part 22, but the temperature of the main body 2 rises due to the radiant heat from the object to be detected and the ambient atmosphere temperature.
  • the resistance value changes corresponding to the rise.
  • the main body 2 is formed of a material having thermal conductivity such as metal, the temperature change of the infrared temperature sensor 1 can be made uniform as a whole following the temperature change of the surroundings.
  • the light guide 21 and the shielding part 22 are substantially symmetrical with the boundary between the light guiding part 23 and the shielding part 22 as the central axis C, and are formed in substantially the same shape. Furthermore, the wiring pattern 31dt to which the infrared detecting thermal element 4 is connected and the wiring pattern 31cp to which the temperature compensating thermal element 5 is connected are formed in the same pattern.
  • the infrared detecting thermal element 4 and the temperature compensating thermal element 5 change in the same way with respect to the surrounding temperature change, have good followability and can suppress the influence on thermal disturbance, It becomes possible to accurately detect a temperature change due to infrared rays from the object.
  • the infrared detecting thermal element 4 and the temperature compensation.
  • the temperature of the thermal element 5 can be maintained, the output can be increased, and the sensitivity can be improved.
  • the wiring pattern 31dt and the wiring pattern 31cp respectively connect the infrared detecting thermal element 4 and the temperature compensating thermal element 5 individually. Therefore, the mutual thermal influence between the wiring pattern 31dt and the wiring pattern 31cp can be reduced, and the sensitivity can be improved.
  • the central wall 24a of the main body 2 contacts the boundary portion between the infrared detecting thermal element 4 and the temperature compensating thermal element 5 on the surface of the substrate 3, the heat of the substrate 3 is transferred to the central wall 24a. Conducted by For this reason, the temperature gradient in the boundary portion can be suppressed, the heat of the substrate 3 on the infrared detecting thermal element 4 side is reduced from being conducted to the substrate 3 on the temperature compensating thermal element 5 side, and mutual interference is prevented. Can be reduced. Therefore, it is possible to obtain a high temperature difference between the infrared detecting thermal element 4 and the temperature compensating thermal element 5, and an improvement in sensitivity can be realized.
  • the infrared detecting thermal element 4 and the temperature compensating thermal element 5 are arranged close to each other. Can contribute to the overall size reduction.
  • the partition wall 24 is in contact with the surface of the substrate 3 with a certain distance d from the inner peripheral walls of the light guide portion 21 and the shielding portion 22 to the outer shape of the heat collection pattern in the wiring pattern 31.
  • the thermal conductivity of the wiring pattern 31 is larger than the thermal conductivity of the substrate 3.
  • the thermal conductivity of the wiring pattern 31 is about 400 W / m ⁇ K
  • the thermal conductivity of the substrate 3 is about 0.5 W / m ⁇ K.
  • infrared thermal energy absorbed by the substrate 3 is transmitted to the wiring pattern 31, the infrared detecting thermal element 4 and the temperature compensating thermal element 5 and to the partition wall 24.
  • the partition wall 24 is spaced apart from the inner peripheral wall of the light guide unit 21 and the shielding unit 22 by a certain dimension d from the outer shape of the heat collection pattern, the heat conducted from the wiring pattern 31 to the partition wall 24. Energy can be suppressed and the thermal time constant can be improved to improve responsiveness.
  • the separation distance of the constant dimension d is set to be the same on the light guide unit 21 side and the shielding unit 22 side, the temperature environment between the infrared detecting thermal element 4 and the temperature compensating thermal element 5 is set. Can be made equal.
  • the present embodiment it is possible to effectively specify the measurement part of the detection target and improve performance such as responsiveness, followability and sensitivity, and to provide a highly reliable infrared temperature sensor. Can be provided. In addition, a surface-mount infrared temperature sensor that can be miniaturized can be obtained.
  • FIG. 8A is a cross-sectional view corresponding to FIG. 5 in which a lid member is provided on the back side of the main body
  • FIG. 8B is a perspective view showing the lid member (Modification 1).
  • FIG. 9 is a cross-sectional view corresponding to FIG. 6 in which a ventilation portion for reducing deformation of the substrate is provided (Modification 2).
  • FIG. 10 is a plan view showing a wiring pattern (Modification 3).
  • the lid member 8 has a substantially rectangular parallelepiped box shape and is made of a metal material such as aluminum.
  • the lid member 8 is disposed on the back side so as to face the substrate 3.
  • At least a part of the inner surface of the lid member 8 facing the substrate 3 is a reflective surface, and is, for example, mirror-finished to have a high reflectance, which is 80% or more, preferably 85% or more. Yes.
  • the lid member 8 is fitted and attached to the accommodation space 23. For this reason, the lid member 8 also has a function of fixing the substrate 3 to the accommodation space 23.
  • the inner surface of the lid member 8 is a reflective surface, the emissivity is low, the thermal influence on the infrared detecting thermal element 4 and the temperature compensating thermal element 5 can be suppressed, and the sensitivity is improved. Can be achieved.
  • the space portion 22 b in the shielding portion 2 is a sealed space portion with the opening on the back side closed by the substrate 3.
  • the ventilation part 9 which permits the air permeability of the space part 22b and the exterior is provided.
  • the ventilation portion 9 is a through hole and is not particularly limited, but is preferably formed to have a diameter of about 0.1 mm to 0.5 mm. Further, for example, when a ventilation gap is formed between the substrate 3 and the main body 2 as the ventilation portion, this gap may be a gap through which air passes, and if there is a gap of 1 ⁇ m or more, the air is sufficiently circulated. be able to. The important thing is not to have a sealed structure.
  • the same effect can be obtained even if a hole of about ⁇ 0.1 mm to ⁇ 0.5 mm is formed in the portion of the substrate 3 corresponding to the space 22b. Further, it is preferable to form a through hole 9 ′ similar to the ventilation part 9 on the light guide part 21 side, and to form the light guide part 21 side and the shielding part 22 side in substantially the same shape which is substantially symmetrical.
  • the infrared temperature sensor when the ambient temperature of the infrared temperature sensor becomes high, the air in the sealed space portion expands, the internal pressure rises, and the substrate swells and deforms. Further, when the air in the space portion is excessively expanded, there may be a problem that the wiring pattern wired on the substrate is cut due to deformation of the substrate. Furthermore, the deformation of the substrate causes a change in the amount of incident infrared rays and the amount of heat released from the substrate, causing a problem that the output of the infrared temperature sensor varies.
  • the ventilation portion 9 ensures air permeability from the outside, suppresses the increase in internal pressure, and reduces deformation of the substrate 3. Is possible. Therefore, it is possible to provide the infrared temperature sensor 1 that can reduce deformation of the substrate 3, enable high accuracy, and ensure reliability.
  • gas_flowing part 9 may be not only a through-hole but a groove shape. The ventilation part 9 should just be formed so that a sealed space part and the exterior may communicate, and a formation position, a shape, a number, etc. are not specifically limited.
  • a wiring pattern 31dt and a wiring pattern 31cp are individually connected to the infrared detecting thermal element 4 and the temperature compensating thermal element 5, respectively.
  • the wiring pattern 31 has a rectangular electrode terminal 31a on one end side, and the electrode terminal 31a collects heat around the infrared detection thermal element 4 (temperature compensation thermal element 5) so as to surround the infrared detection thermal element 4 (temperature compensation thermal element 5).
  • a meandering pattern is formed as a pattern, and a narrow pattern is formed by extending the meandering pattern as a heat collecting pattern toward the rectangular mounting terminal 32.
  • the substrate 3 is thermally welded and attached to the inner wall of the accommodating space 23 on the main body 2 side.
  • the substrate 3 may be provided by adhesion or adhesion.
  • an adhesive layer or an adhesive layer for example, an adhesive sheet or an adhesive sheet is provided on the inner wall of the accommodation space 23 and the substrate 3 is attached with the sheet interposed therebetween. Responsiveness and follow-up performance can be improved by using a material with good thermal conductivity for the adhesive sheet and pressure-sensitive adhesive sheet. The same effect can be obtained by joining with a brazing material such as solder.
  • a flexible wiring board is used as the board 3
  • a rigid wiring board may be used.
  • the wiring board is not limited to a specific type.
  • the mounting substrate as the circuit substrate 10 may be a metal substrate such as aluminum or copper having an insulating layer on the surface.
  • the mounting substrate since the mounting substrate has high thermal conductivity, the infrared detecting thermal element 4 and the temperature compensating thermal element 5 have better followability with respect to ambient temperature changes and suppress the influence on thermal disturbance. be able to.
  • a surface formed as a reflective surface having a high reflectivity for example, a mirror surface portion may be used corresponding to the range where the infrared temperature sensor 1 is mounted.
  • the lid member 8 can be omitted, and the mirror surface portion can perform the same function as the reflecting surface of the lid member 8, and the sensitivity can be improved.
  • FIGS. 11 is an exploded perspective view of the infrared temperature sensor
  • FIG. 12 is an exploded perspective view of the infrared temperature sensor as viewed from the back side
  • FIG. 13 is a plan view of the infrared temperature sensor.
  • FIG. 14 shows an infrared temperature sensor, which is a cross-sectional view corresponding to FIG. 6, and
  • FIG. 15 is a cross-sectional view of the main body taken along line XX in FIG.
  • FIG. 16 is a plan view showing the adhesive sheet.
  • symbol is attached
  • the main body 2 is formed in a substantially rectangular parallelepiped shape by a metal material having thermal conductivity. And the whole main body 2 is oxidized and blackened by heat processing, and has the light guide part 21 and the shielding part 22, but the accommodation space part is not formed.
  • the dimension of the opening 21a in the light guide 21 is set to 6 mm or less, and the dimensional accuracy of the opening 21a is high. Further, the opening 21a is oxidized and blackened by heat treatment, and the thickness of the oxide film is thin and formed to 10 ⁇ m or less. Therefore, the infrared temperature sensor 1 can suppress variations in the output characteristics of the individual infrared temperature sensors without requiring an adjustment member for adjusting the amount of received infrared light energy.
  • the substrate 3 is a flat rigid wiring board formed in a rectangular shape with a thickness dimension of 0.05 mm to 0.2 mm.
  • the substrate 3 has substantially the same outer shape as the other surface side (back side) of the main body 2 and is disposed on the back side of the main body 2.
  • the substrate 3 is attached to the back side of the main body 2 by means such as heat welding, adhesion, or adhesion.
  • the substrate 3 is disposed on the back side of the main body 2 by attaching the adhesive sheet 34 to the back side of the main body 2 and attaching the substrate 3 to the adhesive sheet 34. Is called. That is, the substrate 3 is attached with the adhesive sheet 34 interposed between the back side of the main body 2 and the substrate 3.
  • the adhesive sheet 34 has substantially the same outer shape as the back side of the main body 2, and the center part corresponds to the back side opening of the light guide part 21 and the shielding part 22. It is cut out. Note that an adhesive sheet may be used instead of the adhesive sheet.
  • the substrate 3 is provided with an infrared detecting thermal element 4 and a temperature compensating thermal element 5 on one surface of an insulating base material. Similarly, on one surface, a conductor wiring pattern 31 and a mounting terminal 32 which is electrically connected to the wiring pattern 31 and located on the end side are formed.
  • the main body 2 is not formed with an accommodating space.
  • the back side of the main body 2 has a planar shape, and the light guide portion 21 and the shielding portion 22 are opened in the planar portion (see FIG. 12). Accordingly, the flat substrate 3 is disposed on the planar portion on the back side of the main body 2.
  • the substrate 3 is a flat rigid wiring substrate, for example, an insulating base material made of glass epoxy resin, polyphenylene ether (PPE resin), silicone resin material, etc., and a conductor formed on the surface of the insulating base material.
  • Wiring pattern 31 A resist layer 33 that is an insulating layer is stacked on the wiring pattern 31. Further, the resist layer 33 is not laminated at both ends of the wiring pattern 31, that is, exposed electrode terminals 31 a and mounting terminals 32 that are not covered with the resist layer 33 are formed. In the electrode terminal 31a, only a part to which the terminal electrode of the infrared detecting thermal element 4 or the temperature compensating thermal element 5 is connected is an exposed part not covered with the resist layer 33.
  • the wiring pattern 31 has a substantially rectangular wide electrode terminal 31a on one end side, a narrow pattern extends linearly from the electrode terminal 31a, and a rectangular mounting terminal on the terminal end on the other end side. 32 is formed.
  • the wide electrode terminal 31a has a large area and functions as a heat collection pattern. Since the electrode terminal 31a as the heat collection pattern has a large area and good heat dissipation, the thermal time constant is improved and high-speed response can be realized.
  • a pair of wiring patterns 31 having the same pattern are arranged so that the electrode terminals 31a face each other, and the infrared detecting thermal element 4 or the temperature compensating thermal element 5 is arranged and connected.
  • two pairs of wiring patterns 31 are arranged substantially in parallel.
  • the wiring pattern 31dt to which the infrared detection thermal element 4 is connected and the wiring pattern 31cp to which the temperature compensation thermal element 5 is connected are in the same pattern, and are not connected to each other.
  • the element 4 and the temperature compensating thermal element 5 are individually connected.
  • the wiring pattern 31 is shown clearly in a state where it can be seen through the insulating base material in FIG. 11 and through the resist layer 33 in FIG.
  • the infrared temperature sensor 1 is mounted on a mounting board as the circuit board 10.
  • This mounting substrate is a metal substrate, and is formed, for example, by laminating an insulating base material 14 made of a glass epoxy resin, a glass composite material or the like on a metal base material 13 made of an aluminum material.
  • a hole is formed in a portion of the insulating base material 14 facing the substrate 3, and a cavity 15 is formed between the hole and the metal base material 13 by the hole.
  • the surface of the metal base 13 facing the substrate 3 is formed as a reflective surface 16.
  • the reflecting surface 16 has a high aluminum reflectance, which is 80% or more, preferably 85% or more.
  • a copper inlay substrate having a cavity structure is used, although not shown.
  • the copper surface of the inlay material is plated with nickel / gold plating to increase the reflectance. Note that this does not prevent the above-described lid member 8 from being disposed in the cavity 15.
  • the space portion 22b in the shielding portion 2 is a closed space portion with the opening on the back side closed by the substrate 3.
  • the ventilation part 9 which allows the air permeability between the space part 22b and the outside.
  • a gap is formed as a ventilation portion 9 between the central wall 24 a of the partition wall 24 at the boundary portion between the light guide portion 21 and the shielding portion 22 and the substrate 3. If this gap is 1 ⁇ m or more, sufficient air can be circulated.
  • the wiring pattern 31 may be configured as shown in FIGS. As shown in FIG. 17, a wiring pattern 31dt and a wiring pattern 31cp are individually connected to the infrared detecting thermal element 4 and the temperature compensating thermal element 5, respectively.
  • a wide rectangular electrode terminal 31a heat collecting pattern
  • a plurality of substantially circular openings 31h are formed in this portion, and the polka dot pattern is formed.
  • the wiring pattern 31 shown in FIG. 18 is a lattice-patterned pattern in which a plurality of substantially rectangular openings 31h are formed in a portion of a wide rectangular electrode terminal 31a (heat collecting pattern). It is desirable to set the aperture ratio of the opening 31h to 20% to 80%.
  • a heat conduction path is formed between the openings 31h, and the conduction path is increased, so that heat conduction can be performed in a short time and responsiveness is improved.
  • the ratio of the portion where the conductor is not formed (the opening 31h) to the portion where the conductor is formed is preferably set to 20 to 80%. Furthermore, it is more preferable to combine the meander pattern and the heat collection pattern in which the opening is formed.
  • infrared rays can be absorbed by oxidizing the conductive film of the heat collection pattern, and the infrared light receiving energy can be increased and the sensitivity can be improved.
  • the same operation as that of the first embodiment can be realized, the measurement unit of the detection target can be effectively specified, and the performance of response and sensitivity can be improved. Therefore, the infrared temperature sensor 1 with high reliability can be provided. In addition, the surface-mountable infrared temperature sensor 1 that can be miniaturized can be provided. Further, when the configuration of the main body 2 is simplified and the infrared temperature sensor 1 is mounted on the circuit board 10, There exists an effect which can make protrusion height dimension low.
  • the substrate 3 is described as using a rigid wiring substrate, but a flexible wiring substrate may be used.
  • the wiring board is not limited to a specific type.
  • the infrared temperature sensor 1 in each of the embodiments described above can be provided and applied to various devices for detecting the temperature of a fixing device of a copying machine, a battery unit, a capacitor, an IH cooking heater, an article in a refrigerator.
  • the specially applied device is not limited.
  • the infrared temperature sensor is not limited to the surface mount type.
  • a chip thermistor formed of a ceramic semiconductor is preferably used as the infrared detection thermal element and the temperature compensation thermal element, but not limited to this, a thermocouple, a resistance temperature detector, or the like can be used.
  • the pattern form of the wiring pattern is not particularly limited, and can be appropriately adopted according to the design, such as a straight line shape or a meander shape.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Radiation Pyrometers (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
PCT/JP2016/051665 2015-03-25 2016-01-21 赤外線温度センサ及び赤外線温度センサを用いた装置 WO2016152222A1 (ja)

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JP2016538829A JP6030273B1 (ja) 2015-03-25 2016-01-21 赤外線温度センサ及び赤外線温度センサを用いた装置
CN201680016787.8A CN107407603B (zh) 2015-03-25 2016-01-21 红外线温度传感器以及使用红外线温度传感器的装置
KR1020177026416A KR102610102B1 (ko) 2015-03-25 2016-01-21 적외선 온도 센서 및 적외선 온도 센서를 이용한 장치

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CN107407603A (zh) 2017-11-28
KR102610102B1 (ko) 2023-12-05
KR20170131427A (ko) 2017-11-29
JPWO2016152222A1 (ja) 2017-04-27
JP6030273B1 (ja) 2016-11-24

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