WO2016143789A1 - Method for producing connected structure - Google Patents

Method for producing connected structure Download PDF

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Publication number
WO2016143789A1
WO2016143789A1 PCT/JP2016/057184 JP2016057184W WO2016143789A1 WO 2016143789 A1 WO2016143789 A1 WO 2016143789A1 JP 2016057184 W JP2016057184 W JP 2016057184W WO 2016143789 A1 WO2016143789 A1 WO 2016143789A1
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WO
WIPO (PCT)
Prior art keywords
substrate
conductive film
anisotropic conductive
conductive particles
protruding electrode
Prior art date
Application number
PCT/JP2016/057184
Other languages
French (fr)
Japanese (ja)
Inventor
敏光 森谷
伊澤　弘行
慧子 岩井
田中　勝
Original Assignee
日立化成株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日立化成株式会社 filed Critical 日立化成株式会社
Priority to KR1020177022323A priority Critical patent/KR102634024B1/en
Priority to JP2017505352A priority patent/JP6705442B2/en
Priority to CN201680006103.6A priority patent/CN107112659A/en
Priority to KR1020247003827A priority patent/KR20240018694A/en
Publication of WO2016143789A1 publication Critical patent/WO2016143789A1/en

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/18—Printed circuits structurally associated with non-printed electric components
    • H05K1/181—Printed circuits structurally associated with non-printed electric components associated with surface mounted components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R11/00—Individual connecting elements providing two or more spaced connecting locations for conductive members which are, or may be, thereby interconnected, e.g. end pieces for wires or cables supported by the wire or cable and having means for facilitating electrical connection to some other wire, terminal, or conductive member, blocks of binding posts
    • H01R11/01—Individual connecting elements providing two or more spaced connecting locations for conductive members which are, or may be, thereby interconnected, e.g. end pieces for wires or cables supported by the wire or cable and having means for facilitating electrical connection to some other wire, terminal, or conductive member, blocks of binding posts characterised by the form or arrangement of the conductive interconnection between the connecting locations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R43/00—Apparatus or processes specially adapted for manufacturing, assembling, maintaining, or repairing of line connectors or current collectors or for joining electric conductors
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/321—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives
    • H05K3/323—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives by applying an anisotropic conductive adhesive layer over an array of pads

Definitions

  • the present invention relates to a method for manufacturing a connection structure.
  • An anisotropic conductive film in which conductive particles are dispersed in an adhesive layer is used when a connection structure is manufactured by connecting a substrate such as a liquid crystal display glass panel and a circuit component such as a liquid crystal driving IC. There is a case. In this case, a plurality of protruding electrodes provided on the circuit component can be connected to the substrate in a lump.
  • Patent Document 1 discloses a method for manufacturing a connection structure using an anisotropic conductive film in which conductive particles are present in the vicinity of one surface of the anisotropic conductive film.
  • the adhesive component of the anisotropic conductive film flows when the connection structure is manufactured by heating and pressurization, and accordingly, the conductive particles May flow out from between the protruding electrode and the substrate. In this case, a sufficient number of conductive particles may not be interposed between the protruding electrode and the substrate.
  • the present invention has been made to solve the above-described problems, and an object of the present invention is to provide a method for manufacturing a connection structure in which a sufficient number of conductive particles can be interposed between a protruding electrode and a substrate.
  • a method for manufacturing a connection structure includes a circuit component having a protruding electrode and a substrate via an anisotropic conductive film in which conductive particles are dispersed in an adhesive layer.
  • a method for manufacturing a connection structure including a connecting step for connecting, wherein an anisotropic conductive film in which conductive particles are unevenly distributed on one surface side of the anisotropic conductive film is used as the anisotropic conductive film.
  • An anisotropic conductive film is arranged between the circuit component and the substrate so that the side faces the substrate side, and the distance between the surface of the bump electrode and the surface of the substrate is 150% or less of the average particle diameter of the conductive particles.
  • connection structure manufacturing method by pressing the protruding electrode into the anisotropic conductive film so that the distance between the surface of the protruding electrode and the surface of the substrate is 150% or less of the average particle diameter of the conductive particles,
  • the adhesive component of the anisotropic conductive film can be eliminated in advance from between the protruding electrode and the substrate.
  • the adhesive component existing between the protruding electrode and the substrate is reduced. It is possible to suppress outflow from between. Accordingly, since the conductive particles can be suitably captured between the protruding electrode and the substrate, a sufficient number of conductive particles can be interposed between the protruding electrode and the substrate in the obtained connection structure.
  • the protruding electrode can be pushed into the anisotropic conductive film so that the distance between the surface of the protruding electrode and the surface of the substrate is 100% or less of the average particle diameter of the conductive particles.
  • the conductive particles can be more suitably captured between the protruding electrodes and the substrate.
  • the protruding electrode can be pushed into the anisotropic conductive film so that the distance between the surface of the protruding electrode and the surface of the substrate is less than 100% of the average particle diameter of the conductive particles.
  • the conductive particles are caught and caught between the protruding electrode and the substrate in the temporary fixing step, the outflow of the conductive particles accompanying the flow of the adhesive component of the anisotropic conductive film is further suppressed, and the conductive The particles can be captured more suitably between the protruding electrode and the substrate.
  • the connecting step further includes a main fixing step of electrically connecting the protruding electrode and the substrate through the conductive particles by heating and further pressing the protruding electrode into the anisotropic conductive film after the temporary fixing step. Can do.
  • the adhesive component is previously excluded from between the protruding electrode and the substrate in the temporary fixing step, the conductive particles protrude even if the protruding electrode is further pressed into the anisotropic conductive film while being heated in the main fixing step. Outflow between the electrode and the substrate can be suppressed, and the conductive particles can be suitably captured between the protruding electrode and the substrate. Therefore, a sufficient number of conductive particles can be interposed between the protruding electrode and the substrate in the connection structure.
  • a sufficient number of conductive particles can be interposed between the protruding electrode and the substrate.
  • FIG. 3 is a schematic cross-sectional view showing a cross section taken along line II in FIG. 2. It is a schematic cross section which shows the temporary fixing process in the manufacturing method of the connection structure of FIG. It is a principal part expansion schematic sectional drawing of FIG.4 (b).
  • FIG. 5 is a schematic cross-sectional view illustrating a subsequent main fixing step of FIG. 4.
  • FIG. 1 is a plan view showing an electronic device to which a connection structure according to an embodiment of the present invention is applied.
  • the connection structure 1 is applied to an electronic device 2 such as a touch panel.
  • the electronic device 2 includes a liquid crystal panel 3 and a circuit component 4, for example.
  • the liquid crystal panel 3 includes, for example, a substrate 5 and a liquid crystal display unit 6.
  • the substrate 5 has, for example, a rectangular plate shape with a size of 20 to 300 mm ⁇ 20 to 400 mm and a thickness of 0.1 to 0.3 mm.
  • circuit electrodes (not shown) are formed so as to correspond to the liquid crystal display unit 6 and protruding electrodes 42 (described later) of the circuit component 4.
  • the liquid crystal display unit 6 is attached to the surface 5a of the substrate 5 and is connected to the circuit electrode described above.
  • the circuit component 4 has a rectangular plate shape smaller than the substrate 5, and has a size of, for example, 0.6 to 3.0 mm ⁇ 10 to 50 mm, for example, a thickness of 0.1 to 0.3 mm.
  • the circuit component 4 is spaced apart from the liquid crystal display unit 6 and connected to the circuit electrode of the substrate 5 described above (details will be described later).
  • FIG. 2 is a plan view showing the connection structure.
  • the circuit component 4 includes a main body 41 and a protruding electrode 42 provided on the main body 41.
  • the main body 41 has a mounting surface 41a and a non-mounting surface 41b on the opposite side of the mounting surface 41a.
  • the circuit component 4 is disposed so that the substrate 5 and the mounting surface 41a face each other.
  • a plurality of protruding electrodes (for example, bump electrodes) 42 protruding from the mounting surface 41 a are formed on the main body 41. Silicon or the like is used as a material for forming the main body 41 of the circuit component 4.
  • the protruding electrode 42 is formed of a material (such as Au) that is softer than conductive particles (described later in detail) contained in the anisotropic conductive film.
  • a plurality of protruding electrodes 42 are arranged in a line at substantially equal intervals along one long side 41c of the mounting surface 41a.
  • a plurality of projecting electrodes 42 are arranged along the other long side 41d of 41a so as to form a zigzag pattern over three rows at approximately equal intervals.
  • One row of protruding electrodes 42 arranged on one long side 41c side is, for example, an input side electrode, and three rows of protruding electrodes 42 arranged on the other long side 41d side are, for example, output side electrodes.
  • the protruding electrode 42 has a height of 2 to 15 ⁇ m (height from the mounting surface 41a), for example.
  • a plurality of protruding electrodes 42 may be arranged along, for example, two to four rows along one long side 41c, and a plurality of protruding electrodes 42 along the other long side 41d. May be arranged, for example, over two or four rows.
  • FIG. 3 is a schematic cross-sectional view showing a cross section taken along line II in FIG.
  • the circuit component 4 and the substrate 5 are connected to each other via an anisotropic conductive film 9 in which conductive particles 7 are dispersed in an adhesive layer 8. .
  • an adhesive component constituting the adhesive layer 8 of the anisotropic conductive film 9 a material that exhibits curability by heat or light can be widely applied.
  • an epoxy adhesive or an acrylic adhesive can be used.
  • a crosslinkable material is preferably used because of excellent heat resistance and moisture resistance after connection.
  • an epoxy-based adhesive containing an epoxy resin as a main component as a thermosetting resin is preferably used from the viewpoint of being able to be cured in a short time, having good connection workability, and excellent adhesiveness. .
  • epoxy adhesives include high molecular weight epoxy resins, solid epoxy resins or liquid epoxy resins, or these epoxy resins modified with urethane, polyester, acrylic rubber, nitrile rubber (NBR), synthetic linear polyamide, etc. And an adhesive mainly composed of the modified epoxy resin.
  • the epoxy adhesive generally contains the above-mentioned epoxy resin as a main component and a curing agent, a catalyst, a coupling agent, a filler, and the like.
  • acrylic adhesive examples include an adhesive containing, as a main component, an acrylic resin (polymer or copolymer) containing at least one of acrylic acid, acrylic acid ester, methacrylic acid ester and acrylonitrile as a monomer component. Can be mentioned.
  • Examples of the conductive particles 7 contained in the anisotropic conductive film 9 include particles formed of metal such as Au, Ag, Pt, Ni, Cu, W, Sb, Sn, solder, conductive carbon, and the like. .
  • the conductive particles 7 may be coated particles in which particles formed of non-conductive glass, ceramics, plastics, or the like are used as nuclei and the nuclei are covered with the metal, conductive carbon, or the like.
  • Examples of the shape of the conductive particles 7 before connection include a substantially spherical shape and a shape in which a plurality of protrusions protrude in the radial direction (star shape).
  • the average particle diameter of the conductive particles 7 before connection is preferably 1 to 18 ⁇ m and more preferably 2 to 4 ⁇ m from the viewpoint of dispersibility and conductivity. Within this range, it is preferable to use conductive particles having an average particle size larger than the height of the protruding electrode 42. However, it is also possible to use conductive particles having an average particle size of, for example, 80 to 100% of the height of the protruding electrode 42. It is.
  • the average particle diameter of the conductive particles 7 is obtained by measuring the particle diameter of any 300 conductive particles by observation using a scanning electron microscope (SEM) and taking the average value thereof. When the conductive particle 7 is not spherical, such as having a protrusion, the particle size of the conductive particle 7 may be a diameter of a circle circumscribing the conductive particle in the SEM image.
  • FIG. 4 is a schematic cross-sectional view showing a temporary fixing step in the method for manufacturing a connection structure.
  • the temporary fixing step as shown in FIG. 4A, an anisotropic conductive film 9 in which conductive particles 7 are unevenly distributed on one surface 9 a side of the anisotropic conductive film 9 is used.
  • the anisotropic conductive film 9 is disposed between the circuit component 4 and the substrate 5 (on the surface 5a of the substrate 5) so that the one surface 9a side of the conductive film 9 faces the substrate 5 side.
  • the thickness of the anisotropic conductive film 9 may be, for example, 5 ⁇ m to 30 ⁇ m.
  • the conductive particles 7 have a distance from the one surface 9a side of the anisotropic conductive film 9 in a range in which the average particle diameter of the conductive particles 7 is preferably 150% or less, more preferably 130% or less, and still more preferably. It is located only in the range of 110% or less.
  • the method of unevenly distributing the conductive particles 7 on the one surface 9a side of the anisotropic conductive film 9 is not particularly limited.
  • the anisotropic conductive film in which the conductive particles 7 are unevenly distributed on the one surface 9 a side of the anisotropic conductive film 9 is conductive having the conductive particles 7 on one surface side of the insulating adhesive layer not containing the conductive particles 7. It is formed by laminating an adhesive layer.
  • the thickness of the conductive adhesive layer is preferably, for example, 0.6 times or more and less than 1.0 times the average particle size of the conductive particles 7.
  • the content of the conductive particles 7 in the anisotropic conductive film 9 is 100 parts by volume of components other than the conductive particles 7 in the anisotropic conductive film 9 from the viewpoint of preventing short circuit due to the presence of excessive conductive particles 7. On the other hand, it is preferably 1 to 100 parts by volume, more preferably 10 to 50 parts by volume. Particle density of the conductive particles 7 in the anisotropic conductive film 9, for example, 5000 / mm 2 or more 50000 / mm 2 may be less.
  • the circuit component 4 is heated and pressurized in the facing direction of the circuit component 4 and the substrate 5 (the arrow direction in FIG. 4B).
  • the protruding electrode 42 is pushed into the anisotropic conductive film 9.
  • the heating temperature and pressure at this time are such that the adhesive component of the anisotropic conductive film 9 flows while the conductive particles 7 can be held without flowing out between the protruding electrodes 42 and the substrate 5.
  • the pressure is lower than the heating temperature and pressure in the subsequent main fixing step.
  • the heating temperature is, for example, 40 ° C. to 100 ° C.
  • the pressure is, for example, 2 MPa to 10 MPa per total electrode area of the protruding electrode 42 of the circuit component 4.
  • FIG. 5 is an enlarged schematic cross-sectional view of the main part of FIG.
  • the distance d between the surface 42a of the protruding electrode 42 and the surface 5a of the substrate 5 is preferably 150% or less with respect to the average particle diameter of the conductive particles 7.
  • the protruding electrode 42 of the circuit component 4 is pushed into the anisotropic conductive film 9 so that it is preferably 120% or less, more preferably 100% or less, and particularly preferably less than 100%.
  • the distance d may be, for example, 0.4 times (40%) or more with respect to the average particle diameter of the conductive particles 7.
  • the distance d between the surface 42a of the protruding electrode 42 and the surface 5a of the substrate 5 is determined by observing the circuit component 4 and the substrate 5 temporarily fixed from the substrate 5 side using, for example, a metal microscope, and the surface 42a of the protruding electrode 42. And the difference between the focal length of the surface 5 a of the substrate 5.
  • FIG. 6 is a schematic cross-sectional view showing the main fixing step.
  • the circuit component 4, the substrate 5, and the anisotropic conductive film 9 are heated and pressed in the facing direction of the circuit component 4 and the substrate 5 (arrow direction in FIG. 6).
  • the protruding electrode 42 of the circuit component 4 is further pushed into the anisotropic conductive film 9.
  • the heating temperature and pressure at this time are equal to or higher than the heating temperature and pressure in the temporary fixing step described above, respectively.
  • the heating temperature is, for example, 100 ° C. to 200 ° C.
  • the pressure is, for example, 20 MPa to 100 MPa per total surface electrode of the protruding electrode 42 of the circuit component 4.
  • the adhesive component of the anisotropic conductive film 9 further flows, and the distance d between the surface 42a of the protruding electrode 42 and the surface 5a of the substrate 5 is further reduced.
  • the flatness of the conductive particles 7 is, for example, 30% or more, and the connection between the circuit component 4 and the substrate 5 is ensured.
  • the adhesive layer 8 is cured in a state where the conductive particles 7 are engaged between the protruding electrodes 42 and the substrate 5, whereby the protruding electrodes 42 and the corresponding circuit electrodes (not shown) of the substrate 5 are electrically conductive particles.
  • the adhesive layer 8 can be cured by heating and pressurizing and irradiating, for example, ultraviolet light in this fixing step. Good.
  • the protruding electrode 42 in the temporary fixing step, is set such that the distance d between the surface 42a of the protruding electrode 42 and the surface 5a of the substrate 5 is 150% or less of the average particle diameter of the conductive particles. Is pressed into the anisotropic conductive film 9 in advance, and the protruding electrode 42 is further pressed into the anisotropic conductive film 9 in the main fixing step.
  • the adhesive component of an anisotropically conductive film will flow at once in this fixing process. For this reason, with the rapid flow of the adhesive component, the conductive particles may flow out between the protruding electrode and the substrate, and a sufficient number of conductive particles may not be interposed between the protruding electrode and the substrate.
  • the adhesive component of the anisotropic conductive film 9 can be removed in advance from between the protruding electrode 42 and the substrate 5 by performing a temporary fixing step.
  • the adhesive component existing between the protruding electrode 42 and the substrate 5 is reduced, so that the conductive particles 7 are not exposed to the protruding electrode 42 even when the adhesive component flows due to heating and pressurization in the subsequent main fixing step. And outflow between the substrate 5 can be suppressed. Therefore, since the conductive particles 7 are preferably captured between the protruding electrodes 42 and the substrate 5, a sufficient number of conductive particles 7 are interposed between the protruding electrodes 42 and the substrate 5 in the obtained connection structure 1. It becomes possible to make it.
  • the above-described operation and effect are remarkably exhibited when an anisotropic conductive film in which the conductive particles 7 are unevenly distributed on the one surface 9a side of the anisotropic conductive film 9 is used as the anisotropic conductive film 9.
  • the reason for this is that, from the viewpoint of fluidity of the fluid, the fluidity of the adhesive component on the interface side (one surface 9a side) of the anisotropic conductive film 9 with the substrate 5 is the center of the anisotropic conductive film 9. It may be lower than the fluidity of the adhesive component.
  • the protruding electrode 42 is anisotropically conductive film so that the distance d between the surface 42 a of the protruding electrode 42 and the surface 5 a of the substrate 5 is 100% or less of the average particle diameter of the conductive particles 7. 9, since the conductive particles 7 are temporarily fixed in contact with the protruding electrodes 42 and the substrate 5, the conductive particles 7 can be captured more suitably between the protruding electrodes 42 and the substrate 5.
  • the protruding electrode 42 is anisotropically conductive film so that the distance d between the surface 42 a of the protruding electrode 42 and the surface 5 a of the substrate 5 is less than 100% of the average particle diameter of the conductive particles 7. 9, since the conductive particles 7 are engaged and captured between the protruding electrodes 42 and the substrate 5 in the temporary fixing step, the conductive particles 7 flow out due to the flow of the adhesive component of the anisotropic conductive film 9. Is further suppressed, and the conductive particles 7 can be more preferably captured between the protruding electrodes 42 and the substrate 5.
  • a nickel layer having a thickness of 0.2 ⁇ m is provided on the surface of a particle having polystyrene as a core, and a conductive particle having an average particle size of 3.3 ⁇ m and a specific gravity of 2.5 is produced. And further blended into the above blend.
  • the adhesive paste was applied to a PET film having a thickness of 50 ⁇ m using a coater and dried to obtain a conductive adhesive layer having a thickness of 3 ⁇ m formed on the PET film.
  • bisphenol F type epoxy resin (Mitsubishi Chemical Co., Ltd .: jER807) as an epoxy compound is 45 parts by mass, and 4-hydroxyphenylmethyl is used as a curing agent. 5 parts by mass of benzylsulfonium hexafluoroantimonate in solid content and 55 parts by mass of bisphenol A / bisphenol F copolymer phenoxy resin (manufactured by Nippon Steel & Sumikin Chemical Co., Ltd .: YP-70) as a film forming material did.
  • the adhesive paste was applied to a PET film having a thickness of 50 ⁇ m using a coater and dried to obtain an insulating adhesive layer having a thickness of 14 ⁇ m formed on the PET film. Thereafter, the conductive adhesive layer and the insulating adhesive layer were heated to 40 ° C. and bonded with a hot roll laminator to obtain an anisotropic conductive film A sandwiched between PET films.
  • the number of conductive particles per 25000 ⁇ m 2 was measured at 20 places, and the average value was converted to the number of conductive particles per 1 mm 2 .
  • the density of the conductive particles in the anisotropic conductive film A was 280000 pieces / mm 2 .
  • An IC chip (outer dimensions 2 mm ⁇ 20 mm, thickness 0.3 mm, bump electrode area 840 ⁇ m 2 (length 70 ⁇ m ⁇ width 12 ⁇ m), space between bump electrodes 12 ⁇ m, bump electrode height 15 ⁇ m) prepared as circuit components is prepared. did.
  • a substrate a substrate was prepared in which an ITO wiring pattern (pattern width 31 ⁇ m, interelectrode space 7 ⁇ m) was formed on the surface of a glass substrate (Corning Inc .: # 1737, 38 mm ⁇ 28 mm, thickness 0.3 mm).
  • thermocompression bonding apparatus composed of a stage (150 mm ⁇ 150 mm) composed of a ceramic heater and a tool (3 mm ⁇ 20 mm) was used. Then, the PET film on the side of the conductive adhesive layer of the anisotropic conductive film A (2.5 mm ⁇ 25 mm) is peeled off, and heated and pressed for 2 seconds under the conditions of 80 ° C. and 0.98 MPa to conduct conductive adhesion. The surface on the agent layer side was attached to a glass substrate.
  • the bump electrode of the IC chip is changed by heating and pressurizing for 1 second at the temporary fixing temperature and temporary fixing pressure shown in Table 1.
  • the film was pushed into the conductive film A.
  • Table 1 shows the distance between the temporarily fixed glass substrate and the bump electrode. Note that the distance between the temporarily fixed substrate and the bump electrode was observed from the glass substrate side using a metal microscope, and was calculated from the difference between the focal length of the glass substrate surface and the bump electrode surface. .
  • Capture rate (%) (number of conductive particles on bump electrode / (1 mm 2 / bump electrode area) / number of conductive particles per 1 mm 2 of anisotropic conductive film) ⁇ 100
  • the number of conductive particles was measured at 200 bump electrodes using a metal microscope, and the average value was defined as the number of conductive particles on the bump electrode. The results are shown in Table 1.
  • Example 2-1 and 2-2, Comparative Example 2-1 (Preparation of anisotropic conductive film B) Bisphenol A type phenoxy resin (manufactured by Nippon Steel & Sumikin Chemical Co., Ltd .: YP-50) instead of phenoxy resin a, bisphenol A / bisphenol F copolymer type phenoxy resin (manufactured by Nippon Steel & Sumikin Chemical Co., Ltd .: YP-70)
  • An anisotropic conductive film B was produced in the same manner as the anisotropic conductive film A, except that an F-type phenoxy resin (manufactured by Nippon Steel & Sumikin Chemical Co., Ltd .: FX-316) was used.
  • the number of conductive particles per 25000 ⁇ m 2 was measured at 20 places, and the average value was converted to the number of conductive particles per 1 mm 2 .
  • the density of the conductive particles in the anisotropic conductive film B was 330000 / mm 2 .
  • connection structure was prepared under the conditions shown in Table 2 in the same manner as in Example 1-1 except that the anisotropic conductive film B was used, and the capture rate of conductive particles was measured. The results are shown in Table 2.
  • Example 3-1 and 3-2 Comparative Examples 3-1 and 3-2
  • Table 3 The results are shown in Table 3.
  • Examples 3-1 and 3-2, Comparative Examples 3-1 and 3-2 A connection structure was prepared under the conditions shown in Table 4 in the same manner as in Example 1-1 except that the thickness of the insulating adhesive layer and the height of the bump electrode were changed as shown in Table 4. The capture rate of was measured. The results are shown in Table 4.
  • SYMBOLS 1 Connection structure, 4 ... Circuit component, 5 ... Board

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Wire Bonding (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Non-Insulated Conductors (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Working Measures On Existing Buildindgs (AREA)
  • Joining Of Building Structures In Genera (AREA)
  • Manufacturing Of Electrical Connectors (AREA)

Abstract

The present invention provides a method for producing a connected structure, which comprises a connection step for connecting a substrate 5 and a circuit component 4 having a projected electrode 42 with an anisotropic conductive film 9 being interposed therebetween, said anisotropic conductive film 9 being obtained by dispersing conductive particles 7 in an adhesive layer 8. With respect to the anisotropic conductive film 9, the conductive particles 7 are unevenly gathered in one surface of the anisotropic conductive film 9. The connection step comprises a temporary fixing step wherein the anisotropic conductive film 9 is arranged between the circuit component 4 and the substrate 5 such that the above-described one surface faces the substrate 5, and the projected electrode 42 is pressed into the anisotropic conductive film 9 so that the distance d between a surface 42a of the projected electrode 42 and a surface 5a of the substrate 5 is 150% or less of the average particle diameter of the conductive particles 7.

Description

接続構造体の製造方法Method for manufacturing connection structure
　本発明は、接続構造体の製造方法に関する。 The present invention relates to a method for manufacturing a connection structure.
　液晶表示用ガラスパネル等の基板と液晶駆動用ＩＣ等の回路部品とを接続して接続構造体を製造する際、導電粒子が接着剤層中に分散されてなる異方導電性フィルムが用いられる場合がある。この場合、回路部品に設けられた複数の突起電極を一括で基板に接続することが可能となる。 An anisotropic conductive film in which conductive particles are dispersed in an adhesive layer is used when a connection structure is manufactured by connecting a substrate such as a liquid crystal display glass panel and a circuit component such as a liquid crystal driving IC. There is a case. In this case, a plurality of protruding electrodes provided on the circuit component can be connected to the substrate in a lump.
　近年では、電子機器の発達に伴い、配線の高密度化及び回路の高機能化が進んでいる。その結果、突起電極の小面積化及び小ピッチ化が図られている。このような突起電極の接続において安定した電気的接続を得るためには、充分な数の導電粒子を突起電極と基板との間に介在させる必要がある。 In recent years, with the development of electronic equipment, the density of wiring and the functionality of circuits have been advanced. As a result, the projecting electrodes are reduced in area and pitch. In order to obtain a stable electrical connection in the connection of such protruding electrodes, it is necessary to interpose a sufficient number of conductive particles between the protruding electrodes and the substrate.
　このような課題に対し、例えば特許文献１では、導電粒子が異方導電性フィルムの片側表面付近に存在する異方導電性フィルムを用いた接続構造体の製造方法が開示されている。 In response to such a problem, for example, Patent Document 1 discloses a method for manufacturing a connection structure using an anisotropic conductive film in which conductive particles are present in the vicinity of one surface of the anisotropic conductive film.
特開２００７－１０３５４５号公報JP 2007-103545 A
　しかしながら、上述した従来の異方導電性フィルムを用いた場合でも、加熱・加圧をして接続構造体を製造する際に異方導電性フィルムの接着剤成分が流動し、それに伴って導電粒子が突起電極と基板との間から流出してしまう場合がある。この場合、充分な数の導電粒子が突起電極と基板との間に介在しないおそれがある。 However, even when the above-described conventional anisotropic conductive film is used, the adhesive component of the anisotropic conductive film flows when the connection structure is manufactured by heating and pressurization, and accordingly, the conductive particles May flow out from between the protruding electrode and the substrate. In this case, a sufficient number of conductive particles may not be interposed between the protruding electrode and the substrate.
　本発明は、上記課題の解決のためになされたものであり、充分な数の導電粒子を突起電極と基板との間に介在させることが可能な接続構造体の製造方法を提供することを目的とする。 The present invention has been made to solve the above-described problems, and an object of the present invention is to provide a method for manufacturing a connection structure in which a sufficient number of conductive particles can be interposed between a protruding electrode and a substrate. And
　上記課題の解決のため、本発明に係る接続構造体の製造方法は、突起電極を有する回路部品と基板とを、導電粒子が接着剤層中に分散されてなる異方導電性フィルムを介して接続する接続工程を備える接続構造体の製造方法であって、異方導電性フィルムとして、導電粒子が異方導電性フィルムの一面側に偏在した異方導電性フィルムを用い、接続工程は、一面側が基板側を向くように異方導電性フィルムを回路部品と基板との間に配置し、突起電極の表面と基板の表面との間の距離が導電粒子の平均粒径の１５０％以下となるように突起電極を異方導電性フィルムに押し込む仮固定工程を備える。 In order to solve the above problems, a method for manufacturing a connection structure according to the present invention includes a circuit component having a protruding electrode and a substrate via an anisotropic conductive film in which conductive particles are dispersed in an adhesive layer. A method for manufacturing a connection structure including a connecting step for connecting, wherein an anisotropic conductive film in which conductive particles are unevenly distributed on one surface side of the anisotropic conductive film is used as the anisotropic conductive film. An anisotropic conductive film is arranged between the circuit component and the substrate so that the side faces the substrate side, and the distance between the surface of the bump electrode and the surface of the substrate is 150% or less of the average particle diameter of the conductive particles. Thus, a temporary fixing step of pushing the protruding electrode into the anisotropic conductive film is provided.
　この接続構造体の製造方法では、突起電極の表面と基板の表面との間の距離が導電粒子の平均粒径の１５０％以下となるように突起電極を異方導電性フィルムに押し込むことにより、突起電極と基板との間から異方導電性フィルムの接着剤成分を予め排除できる。これにより、突起電極と基板との間に存在する接着剤成分が少なくなるため、後続の本固定工程における加熱・加圧によって接着剤成分が流動した場合でも、導電粒子が突起電極と基板との間から流出することを抑制できる。したがって、導電粒子を突起電極と基板との間に好適に捕捉できるため、得られる接続構造体において、充分な数の導電粒子を突起電極と基板との間に介在させることが可能になる。 In this connection structure manufacturing method, by pressing the protruding electrode into the anisotropic conductive film so that the distance between the surface of the protruding electrode and the surface of the substrate is 150% or less of the average particle diameter of the conductive particles, The adhesive component of the anisotropic conductive film can be eliminated in advance from between the protruding electrode and the substrate. As a result, the adhesive component existing between the protruding electrode and the substrate is reduced. It is possible to suppress outflow from between. Accordingly, since the conductive particles can be suitably captured between the protruding electrode and the substrate, a sufficient number of conductive particles can be interposed between the protruding electrode and the substrate in the obtained connection structure.
　仮固定工程において、突起電極の表面と基板の表面との間の距離が導電粒子の平均粒径の１００％以下となるように突起電極を異方導電性フィルムに押し込むことができる。この場合、導電粒子が突起電極及び基板に接触した状態で仮固定されるため、導電粒子を突起電極と基板との間により好適に捕捉できる。 In the temporary fixing step, the protruding electrode can be pushed into the anisotropic conductive film so that the distance between the surface of the protruding electrode and the surface of the substrate is 100% or less of the average particle diameter of the conductive particles. In this case, since the conductive particles are temporarily fixed while being in contact with the protruding electrodes and the substrate, the conductive particles can be more suitably captured between the protruding electrodes and the substrate.
　仮固定工程において、突起電極の表面と基板の表面との間の距離が導電粒子の平均粒径の１００％未満となるように突起電極を異方導電性フィルムに押し込むことができる。この場合、仮固定工程において導電粒子が突起電極と基板との間に噛合して捕捉されるため、異方導電性フィルムの接着剤成分の流動に伴う導電粒子の流出がより一層抑制され、導電粒子を突起電極と基板との間に更に好適に捕捉できる。 In the temporary fixing step, the protruding electrode can be pushed into the anisotropic conductive film so that the distance between the surface of the protruding electrode and the surface of the substrate is less than 100% of the average particle diameter of the conductive particles. In this case, since the conductive particles are caught and caught between the protruding electrode and the substrate in the temporary fixing step, the outflow of the conductive particles accompanying the flow of the adhesive component of the anisotropic conductive film is further suppressed, and the conductive The particles can be captured more suitably between the protruding electrode and the substrate.
　接続工程は、仮固定工程の後に、加熱すると共に突起電極を異方導電性フィルムに更に押し込むことにより、突起電極と基板とを導電粒子を介して電気的に接続する本固定工程を更に備えることができる。この場合、仮固定工程において突起電極と基板との間から接着剤成分が予め排除されているため、本固定工程において加熱すると共に突起電極を異方導電性フィルムに更に押し込んでも、導電粒子が突起電極と基板との間から流出することを抑制でき、導電粒子を突起電極と基板との間に好適に捕捉できる。したがって、接続構造体において、充分な数の導電粒子を突起電極と基板との間に介在させることが可能になる。 The connecting step further includes a main fixing step of electrically connecting the protruding electrode and the substrate through the conductive particles by heating and further pressing the protruding electrode into the anisotropic conductive film after the temporary fixing step. Can do. In this case, since the adhesive component is previously excluded from between the protruding electrode and the substrate in the temporary fixing step, the conductive particles protrude even if the protruding electrode is further pressed into the anisotropic conductive film while being heated in the main fixing step. Outflow between the electrode and the substrate can be suppressed, and the conductive particles can be suitably captured between the protruding electrode and the substrate. Therefore, a sufficient number of conductive particles can be interposed between the protruding electrode and the substrate in the connection structure.
　本発明によれば、充分な数の導電粒子を突起電極と基板との間に介在させることが可能になる。 According to the present invention, a sufficient number of conductive particles can be interposed between the protruding electrode and the substrate.
本発明の実施形態に係る接続構造体が適用された電子機器を示す平面図である。It is a top view which shows the electronic device to which the connection structure which concerns on embodiment of this invention was applied. 図１の接続構造体を示す平面図である。It is a top view which shows the connection structure of FIG. 図２中のＩ－Ｉ矢視断面を示す模式断面図である。FIG. 3 is a schematic cross-sectional view showing a cross section taken along line II in FIG. 2. 図１の接続構造体の製造方法における仮固定工程を示す模式断面図である。It is a schematic cross section which shows the temporary fixing process in the manufacturing method of the connection structure of FIG. 図４（ｂ）の要部拡大模式断面図である。It is a principal part expansion schematic sectional drawing of FIG.4 (b). 図４の後続の本固定工程を示す模式断面図である。FIG. 5 is a schematic cross-sectional view illustrating a subsequent main fixing step of FIG. 4.
　以下、図面を参照しながら、本発明の接続構造体の製造方法の実施形態について詳細に説明する。 Hereinafter, embodiments of the method for manufacturing a connection structure of the present invention will be described in detail with reference to the drawings.
　図１は、本発明の実施形態に係る接続構造体が適用された電子機器を示す平面図である。図１に示すように、接続構造体１は、例えばタッチパネル等の電子機器２に適用されている。電子機器２は、例えば液晶パネル３と回路部品４とから構成されている。 FIG. 1 is a plan view showing an electronic device to which a connection structure according to an embodiment of the present invention is applied. As shown in FIG. 1, the connection structure 1 is applied to an electronic device 2 such as a touch panel. The electronic device 2 includes a liquid crystal panel 3 and a circuit component 4, for example.
　液晶パネル３は、例えば基板５と液晶表示部６とを有している。基板５は、例えば大きさが２０～３００ｍｍ×２０～４００ｍｍ、厚さが０．１～０．３ｍｍの矩形板状を呈している。基板５としては、例えば無アルカリガラス等から形成されるガラス基板が用いられる。基板５の表面５ａには、液晶表示部６及び回路部品４の突起電極４２（後述）と対応するように不図示の回路電極が形成されている。液晶表示部６は、基板５の表面５ａに取り付けられており、上述の回路電極に接続されている。 The liquid crystal panel 3 includes, for example, a substrate 5 and a liquid crystal display unit 6. The substrate 5 has, for example, a rectangular plate shape with a size of 20 to 300 mm × 20 to 400 mm and a thickness of 0.1 to 0.3 mm. As the substrate 5, for example, a glass substrate formed from non-alkali glass or the like is used. On the surface 5 a of the substrate 5, circuit electrodes (not shown) are formed so as to correspond to the liquid crystal display unit 6 and protruding electrodes 42 (described later) of the circuit component 4. The liquid crystal display unit 6 is attached to the surface 5a of the substrate 5 and is connected to the circuit electrode described above.
　回路部品４は、基板５より小さな矩形板状を呈しており、例えば０．６～３．０ｍｍ×１０～５０ｍｍの大きさ、例えば０．１～０．３ｍｍの厚さを有している。回路部品４は、液晶表示部６と離間配置されており、上述の基板５の回路電極に接続されている（詳しくは後述）。 The circuit component 4 has a rectangular plate shape smaller than the substrate 5, and has a size of, for example, 0.6 to 3.0 mm × 10 to 50 mm, for example, a thickness of 0.1 to 0.3 mm. The circuit component 4 is spaced apart from the liquid crystal display unit 6 and connected to the circuit electrode of the substrate 5 described above (details will be described later).
　図２は、接続構造体を示す平面図である。図２に示すように、回路部品４は、本体部４１と、本体部４１に設けられた突起電極４２とを有している。本体部４１は、実装面４１ａと、実装面４１ａの反対側に非実装面４１ｂとを有している。接続構造体１において、回路部品４は、基板５と実装面４１ａとが対向するように配置されている。本体部４１には、実装面４１ａから突出した突起電極（例えばバンプ電極）４２が複数形成されている。回路部品４の本体部４１を形成する材料としては、シリコン等が用いられる。突起電極４２は、異方導電性フィルムに含有されている導電粒子（詳しくは後述）より軟らかい材料（Ａｕ等）で形成されている。 FIG. 2 is a plan view showing the connection structure. As shown in FIG. 2, the circuit component 4 includes a main body 41 and a protruding electrode 42 provided on the main body 41. The main body 41 has a mounting surface 41a and a non-mounting surface 41b on the opposite side of the mounting surface 41a. In the connection structure 1, the circuit component 4 is disposed so that the substrate 5 and the mounting surface 41a face each other. A plurality of protruding electrodes (for example, bump electrodes) 42 protruding from the mounting surface 41 a are formed on the main body 41. Silicon or the like is used as a material for forming the main body 41 of the circuit component 4. The protruding electrode 42 is formed of a material (such as Au) that is softer than conductive particles (described later in detail) contained in the anisotropic conductive film.
　図２に示すように、実装面４１ａには、例えば、実装面４１ａの一方の長辺４１ｃに沿って、複数の突起電極４２が略等間隔に１列に配置されており、また、実装面４１ａの他方の長辺４１ｄに沿って、複数の突起電極４２が略等間隔に３列に亘って千鳥状を呈するように配置されている。一方の長辺４１ｃ側に配置された１列の突起電極４２は例えば入力側の電極であり、他方の長辺４１ｄ側に配置された３列の突起電極４２は例えば出力側の電極である。突起電極４２は、例えば２～１５μｍの高さ（実装面４１ａからの高さ）を有している。なお、実装面４１ａにおいては、一方の長辺４１ｃに沿って複数の突起電極４２が例えば２～４列に亘って配置されていてもよく、他方の長辺４１ｄに沿って複数の突起電極４２が例えば２又は４列に亘って配置されていてもよい。 As shown in FIG. 2, on the mounting surface 41a, for example, a plurality of protruding electrodes 42 are arranged in a line at substantially equal intervals along one long side 41c of the mounting surface 41a. A plurality of projecting electrodes 42 are arranged along the other long side 41d of 41a so as to form a zigzag pattern over three rows at approximately equal intervals. One row of protruding electrodes 42 arranged on one long side 41c side is, for example, an input side electrode, and three rows of protruding electrodes 42 arranged on the other long side 41d side are, for example, output side electrodes. The protruding electrode 42 has a height of 2 to 15 μm (height from the mounting surface 41a), for example. On the mounting surface 41a, a plurality of protruding electrodes 42 may be arranged along, for example, two to four rows along one long side 41c, and a plurality of protruding electrodes 42 along the other long side 41d. May be arranged, for example, over two or four rows.
　図３は、図２中のＩ－Ｉ矢視断面を示す模式断面図である。図３に示すように、接続構造体１においては、回路部品４と基板５とが、導電粒子７が接着剤層８中に分散された異方導電性フィルム９を介して互いに接続されている。 FIG. 3 is a schematic cross-sectional view showing a cross section taken along line II in FIG. As shown in FIG. 3, in the connection structure 1, the circuit component 4 and the substrate 5 are connected to each other via an anisotropic conductive film 9 in which conductive particles 7 are dispersed in an adhesive layer 8. .
　異方導電性フィルム９の接着剤層８を構成する接着剤成分としては、熱又は光により硬化性を示す材料が広く適用でき、例えばエポキシ系接着剤又はアクリル系接着剤を使用できる。接続後の耐熱性及び耐湿性に優れていることから、架橋性材料が好ましく用いられる。なかでも、熱硬化性樹脂であるエポキシ樹脂を主成分として含有するエポキシ系接着剤は、短時間での硬化が可能で接続作業性がよく、接着性に優れている等の観点から好ましく用いられる。 As the adhesive component constituting the adhesive layer 8 of the anisotropic conductive film 9, a material that exhibits curability by heat or light can be widely applied. For example, an epoxy adhesive or an acrylic adhesive can be used. A crosslinkable material is preferably used because of excellent heat resistance and moisture resistance after connection. Among these, an epoxy-based adhesive containing an epoxy resin as a main component as a thermosetting resin is preferably used from the viewpoint of being able to be cured in a short time, having good connection workability, and excellent adhesiveness. .
　エポキシ系接着剤の具体例としては、高分子量エポキシ樹脂、固形エポキシ樹脂若しくは液状エポキシ樹脂、又は、これらのエポキシ樹脂をウレタン、ポリエステル、アクリルゴム、ニトリルゴム（ＮＢＲ）、合成線状ポリアミド等で変性した変性エポキシ樹脂を主成分とする接着剤が挙げられる。エポキシ系接着剤は、一般的には、主成分である上記エポキシ樹脂と、硬化剤、触媒、カップリング剤、充填剤等とを含有している。 Specific examples of epoxy adhesives include high molecular weight epoxy resins, solid epoxy resins or liquid epoxy resins, or these epoxy resins modified with urethane, polyester, acrylic rubber, nitrile rubber (NBR), synthetic linear polyamide, etc. And an adhesive mainly composed of the modified epoxy resin. The epoxy adhesive generally contains the above-mentioned epoxy resin as a main component and a curing agent, a catalyst, a coupling agent, a filler, and the like.
　アクリル系接着剤の具体例として、アクリル酸、アクリル酸エステル、メタクリル酸エステル及びアクリロニトリルのうち少なくとも一つをモノマ成分とするアクリル樹脂（重合体又は共重合体）を主成分として含有する接着剤が挙げられる。 Specific examples of the acrylic adhesive include an adhesive containing, as a main component, an acrylic resin (polymer or copolymer) containing at least one of acrylic acid, acrylic acid ester, methacrylic acid ester and acrylonitrile as a monomer component. Can be mentioned.
　異方導電性フィルム９に含有される導電粒子７としては、Ａｕ、Ａｇ、Ｐｔ、Ｎｉ、Ｃｕ、Ｗ、Ｓｂ、Ｓｎ、はんだ等の金属、導電性カーボンなどで形成された粒子が例示される。導電粒子７は、非導電性のガラス、セラミック、プラスチック等で形成された粒子を核とし、この核を上記の金属、導電性カーボン等で被覆した被覆粒子であってもよい。接続前の導電粒子７の形状としては、略球状、径方向に複数の突起が突出しているような形状（星形状）等が挙げられる。 Examples of the conductive particles 7 contained in the anisotropic conductive film 9 include particles formed of metal such as Au, Ag, Pt, Ni, Cu, W, Sb, Sn, solder, conductive carbon, and the like. . The conductive particles 7 may be coated particles in which particles formed of non-conductive glass, ceramics, plastics, or the like are used as nuclei and the nuclei are covered with the metal, conductive carbon, or the like. Examples of the shape of the conductive particles 7 before connection include a substantially spherical shape and a shape in which a plurality of protrusions protrude in the radial direction (star shape).
　接続前の導電粒子７の平均粒径は、分散性及び導電性の観点から、１～１８μｍであることが好ましく、２～４μｍであることがより好ましい。この範囲内において、平均粒径が突起電極４２の高さより大きい導電粒子を用いることが好ましいが、平均粒径が突起電極４２の高さの例えば８０～１００％である導電粒子を用いることも可能である。導電粒子７の平均粒径は、任意の導電粒子３００個について、走査型電子顕微鏡（ＳＥＭ）を用いた観察により粒径の測定を行い、それらの平均値を取ることにより得られる。導電粒子７が突起を有する等の球形ではない場合、導電粒子７の粒径は、ＳＥＭの画像における導電粒子に外接する円の直径とすればよい。 The average particle diameter of the conductive particles 7 before connection is preferably 1 to 18 μm and more preferably 2 to 4 μm from the viewpoint of dispersibility and conductivity. Within this range, it is preferable to use conductive particles having an average particle size larger than the height of the protruding electrode 42. However, it is also possible to use conductive particles having an average particle size of, for example, 80 to 100% of the height of the protruding electrode 42. It is. The average particle diameter of the conductive particles 7 is obtained by measuring the particle diameter of any 300 conductive particles by observation using a scanning electron microscope (SEM) and taking the average value thereof. When the conductive particle 7 is not spherical, such as having a protrusion, the particle size of the conductive particle 7 may be a diameter of a circle circumscribing the conductive particle in the SEM image.
　続いて、本実施形態に係る接続構造体の製造方法について説明する。本実施形態に係る接続構造体の製造方法は、接続工程を備えており、該接続工程は、仮固定工程と本固定工程を備えている。図４は、接続構造体の製造方法における仮固定工程を示す模式断面図である。仮固定工程では、図４（ａ）に示すように、異方導電性フィルム９として、導電粒子７が異方導電性フィルム９の一面９ａ側に偏在した異方導電性フィルムを用い、異方導電性フィルム９の一面９ａ側が基板５側を向くように、異方導電性フィルム９を回路部品４と基板５との間（基板５の表面５ａ上）に配置する。 Then, the manufacturing method of the connection structure concerning this embodiment is explained. The manufacturing method of the connection structure according to the present embodiment includes a connection step, and the connection step includes a temporary fixing step and a main fixing step. FIG. 4 is a schematic cross-sectional view showing a temporary fixing step in the method for manufacturing a connection structure. In the temporary fixing step, as shown in FIG. 4A, an anisotropic conductive film 9 in which conductive particles 7 are unevenly distributed on one surface 9 a side of the anisotropic conductive film 9 is used. The anisotropic conductive film 9 is disposed between the circuit component 4 and the substrate 5 (on the surface 5a of the substrate 5) so that the one surface 9a side of the conductive film 9 faces the substrate 5 side.
　異方導電性フィルム９の厚さは、例えば５μｍ～３０μｍであってよい。導電粒子７は、異方導電性フィルム９の一面９ａ側からの距離が、導電粒子７の平均粒径の好ましくは１５０％以下である範囲、より好ましくは１３０％以下である範囲、更に好ましくは１１０％以下である範囲にのみ位置している。 The thickness of the anisotropic conductive film 9 may be, for example, 5 μm to 30 μm. The conductive particles 7 have a distance from the one surface 9a side of the anisotropic conductive film 9 in a range in which the average particle diameter of the conductive particles 7 is preferably 150% or less, more preferably 130% or less, and still more preferably. It is located only in the range of 110% or less.
　異方導電性フィルム９において、導電粒子７を異方導電性フィルム９の一面９ａ側に偏在させる方法は、特に限定されない。例えば、導電粒子７が異方導電性フィルム９の一面９ａ側に偏在した異方導電性フィルムは、導電粒子７を含有しない絶縁性接着剤層の一面側に、導電粒子７を含有する導電性接着剤層を積層することにより形成される。この場合、導電性接着剤層の厚さは、例えば導電粒子７の平均粒径の０．６倍以上１．０倍未満であることが好ましい。 In the anisotropic conductive film 9, the method of unevenly distributing the conductive particles 7 on the one surface 9a side of the anisotropic conductive film 9 is not particularly limited. For example, the anisotropic conductive film in which the conductive particles 7 are unevenly distributed on the one surface 9 a side of the anisotropic conductive film 9 is conductive having the conductive particles 7 on one surface side of the insulating adhesive layer not containing the conductive particles 7. It is formed by laminating an adhesive layer. In this case, the thickness of the conductive adhesive layer is preferably, for example, 0.6 times or more and less than 1.0 times the average particle size of the conductive particles 7.
　異方導電性フィルム９における導電粒子７の含有量は、導電粒子７が過剰に存在することによる短絡を防止する観点から、異方導電性フィルム９中の導電粒子７以外の成分１００体積部に対して、好ましくは１体積部～１００体積部、より好ましくは１０体積部～５０体積部である。異方導電性フィルム９における導電粒子７の粒子密度は、例えば５０００個／ｍｍ２以上５００００個／ｍｍ２以下であってよい。 The content of the conductive particles 7 in the anisotropic conductive film 9 is 100 parts by volume of components other than the conductive particles 7 in the anisotropic conductive film 9 from the viewpoint of preventing short circuit due to the presence of excessive conductive particles 7. On the other hand, it is preferably 1 to 100 parts by volume, more preferably 10 to 50 parts by volume. Particle density of the conductive particles 7 in the anisotropic conductive film 9, for example, 5000 / mm 2 or more 50000 / mm 2 may be less.
　仮固定工程では、続いて、図４（ｂ）に示すように、加熱すると共に回路部品４と基板５との対向方向（図４（ｂ）の矢印方向）に加圧することにより、回路部品４の突起電極４２を異方導電性フィルム９に押し込んでいく。このときの加熱温度及び圧力は、異方導電性フィルム９の接着剤成分を流動させる一方で、導電粒子７を突起電極４２と基板５との間から流出させずに保持できるような加熱温度及び圧力であることが好ましく、それぞれ後続の本固定工程における加熱温度及び圧力以下である。具体的には、加熱温度は例えば４０℃～１００℃であり、圧力は例えば回路部品４の突起電極４２の総電極面積あたり２ＭＰａ～１０ＭＰａである。 In the temporary fixing step, subsequently, as shown in FIG. 4B, the circuit component 4 is heated and pressurized in the facing direction of the circuit component 4 and the substrate 5 (the arrow direction in FIG. 4B). The protruding electrode 42 is pushed into the anisotropic conductive film 9. The heating temperature and pressure at this time are such that the adhesive component of the anisotropic conductive film 9 flows while the conductive particles 7 can be held without flowing out between the protruding electrodes 42 and the substrate 5. It is preferable that the pressure is lower than the heating temperature and pressure in the subsequent main fixing step. Specifically, the heating temperature is, for example, 40 ° C. to 100 ° C., and the pressure is, for example, 2 MPa to 10 MPa per total electrode area of the protruding electrode 42 of the circuit component 4.
　図５は、図４（ｂ）の要部拡大模式断面図である。図５に示すように、仮固定工程では、突起電極４２の表面４２ａと基板５の表面５ａとの間の距離ｄが、導電粒子７の平均粒径に対して、好ましくは１５０％以下、より好ましくは１２０％以下、更に好ましくは１００％以下、特に好ましくは１００％未満となるように、回路部品４の突起電極４２を異方導電性フィルム９に押し込んでいく。一方、距離ｄは、導電粒子７の平均粒径に対して、例えば０．４倍（４０％）以上であってよい。距離ｄを上記のように設定することで、後述する本固定工程後の接続構造体において、良好な接続信頼性を得ることができる。突起電極４２の表面４２ａと基板５の表面５ａとの間の距離ｄは、例えば金属顕微鏡を用いて基板５側から仮固定された回路部品４及び基板５を観察し、突起電極４２の表面４２ａの焦点距離と基板５の表面５ａの焦点距離との差から算出できる。 FIG. 5 is an enlarged schematic cross-sectional view of the main part of FIG. As shown in FIG. 5, in the temporary fixing step, the distance d between the surface 42a of the protruding electrode 42 and the surface 5a of the substrate 5 is preferably 150% or less with respect to the average particle diameter of the conductive particles 7. The protruding electrode 42 of the circuit component 4 is pushed into the anisotropic conductive film 9 so that it is preferably 120% or less, more preferably 100% or less, and particularly preferably less than 100%. On the other hand, the distance d may be, for example, 0.4 times (40%) or more with respect to the average particle diameter of the conductive particles 7. By setting the distance d as described above, good connection reliability can be obtained in the connection structure after the final fixing step described later. The distance d between the surface 42a of the protruding electrode 42 and the surface 5a of the substrate 5 is determined by observing the circuit component 4 and the substrate 5 temporarily fixed from the substrate 5 side using, for example, a metal microscope, and the surface 42a of the protruding electrode 42. And the difference between the focal length of the surface 5 a of the substrate 5.
　本実施形態に係る接続構造体の製造方法では、仮固定工程に続いて本固定工程が行われる。図６は、本固定工程を示す模式断面図である。図６に示すように、本固定工程では、回路部品４、基板５及び異方導電性フィルム９を加熱すると共に回路部品４と基板５との対向方向（図６の矢印方向）に加圧することにより、回路部品４の突起電極４２を異方導電性フィルム９に更に押し込んでいく。このときの加熱温度及び圧力は、それぞれ上述の仮固定工程における加熱温度及び圧力以上である。具体的には、加熱温度は例えば１００℃～２００℃であり、圧力は例えば回路部品４の突起電極４２の総面極当たり２０ＭＰａ～１００ＭＰａである。 In the manufacturing method of the connection structure according to the present embodiment, the main fixing step is performed following the temporary fixing step. FIG. 6 is a schematic cross-sectional view showing the main fixing step. As shown in FIG. 6, in this fixing step, the circuit component 4, the substrate 5, and the anisotropic conductive film 9 are heated and pressed in the facing direction of the circuit component 4 and the substrate 5 (arrow direction in FIG. 6). Thus, the protruding electrode 42 of the circuit component 4 is further pushed into the anisotropic conductive film 9. The heating temperature and pressure at this time are equal to or higher than the heating temperature and pressure in the temporary fixing step described above, respectively. Specifically, the heating temperature is, for example, 100 ° C. to 200 ° C., and the pressure is, for example, 20 MPa to 100 MPa per total surface electrode of the protruding electrode 42 of the circuit component 4.
　これにより、異方導電性フィルム９の接着剤成分が更に流動し、突起電極４２の表面４２ａと基板５の表面５ａとの間の距離ｄが更に縮まる。その結果、導電粒子７の扁平率は例えば３０％以上となり、回路部品４と基板５との接続が担保される。そして、導電粒子７が突起電極４２と基板５との間に噛合した状態で接着剤層８を硬化させることで、突起電極４２とそれに対応する基板５の回路電極（不図示）とが導電粒子７を介して電気的に接続され、かつ隣接する突起電極４２，４３同士及び隣接する回路電極同士が電気的に絶縁された状態で図３に示した接続構造体１が得られる。なお、異方導電性フィルム９の接着剤成分が光硬化性樹脂を含有している場合、本固定工程において加熱・加圧すると共に例えば紫外光を照射することにより接着剤層８を硬化させればよい。 Thereby, the adhesive component of the anisotropic conductive film 9 further flows, and the distance d between the surface 42a of the protruding electrode 42 and the surface 5a of the substrate 5 is further reduced. As a result, the flatness of the conductive particles 7 is, for example, 30% or more, and the connection between the circuit component 4 and the substrate 5 is ensured. Then, the adhesive layer 8 is cured in a state where the conductive particles 7 are engaged between the protruding electrodes 42 and the substrate 5, whereby the protruding electrodes 42 and the corresponding circuit electrodes (not shown) of the substrate 5 are electrically conductive particles. The connection structure 1 shown in FIG. 3 is obtained in a state in which the protruding electrodes 42 and 43 adjacent to each other and the adjacent circuit electrodes are electrically insulated from each other. If the adhesive component of the anisotropic conductive film 9 contains a photocurable resin, the adhesive layer 8 can be cured by heating and pressurizing and irradiating, for example, ultraviolet light in this fixing step. Good.
　この接続構造体の製造方法では、仮固定工程において、突起電極４２の表面４２ａと基板５の表面５ａとの間の距離ｄが導電粒子の平均粒径の１５０％以下となるように突起電極４２を異方導電性フィルム９に予め押し込んだ上で、本固定工程において突起電極４２を異方導電性フィルム９に更に押し込んでいる。ここで、仮固定工程を行わずに本固定工程を行う従来の接続構造体の製造方法では、本固定工程において一度に異方導電性フィルムの接着剤成分が流動することとなる。このため、接着剤成分の急激な流動に伴って導電粒子が突起電極と基板との間から流出し、突起電極と基板との間に充分な数の導電粒子が介在しなくなるおそれがある。 In this connection structure manufacturing method, in the temporary fixing step, the protruding electrode 42 is set such that the distance d between the surface 42a of the protruding electrode 42 and the surface 5a of the substrate 5 is 150% or less of the average particle diameter of the conductive particles. Is pressed into the anisotropic conductive film 9 in advance, and the protruding electrode 42 is further pressed into the anisotropic conductive film 9 in the main fixing step. Here, in the manufacturing method of the conventional connection structure which performs this fixing process without performing a temporary fixing process, the adhesive component of an anisotropically conductive film will flow at once in this fixing process. For this reason, with the rapid flow of the adhesive component, the conductive particles may flow out between the protruding electrode and the substrate, and a sufficient number of conductive particles may not be interposed between the protruding electrode and the substrate.
　これに対し、この接続構造体の製造方法では、仮固定工程を行うことにより、突起電極４２と基板５との間から異方導電性フィルム９の接着剤成分を予め排除できる。これにより、突起電極４２と基板５との間に存在する接着剤成分が少なくなるため、後続の本固定工程における加熱・加圧によって接着剤成分が流動した場合でも、導電粒子７が突起電極４２と基板５との間から流出することを抑制できる。したがって、導電粒子７が突起電極４２と基板５との間に好適に捕捉されるため、得られる接続構造体１において、充分な数の導電粒子７を突起電極４２と基板５との間に介在させることが可能になる。 On the other hand, in the manufacturing method of this connection structure, the adhesive component of the anisotropic conductive film 9 can be removed in advance from between the protruding electrode 42 and the substrate 5 by performing a temporary fixing step. As a result, the adhesive component existing between the protruding electrode 42 and the substrate 5 is reduced, so that the conductive particles 7 are not exposed to the protruding electrode 42 even when the adhesive component flows due to heating and pressurization in the subsequent main fixing step. And outflow between the substrate 5 can be suppressed. Therefore, since the conductive particles 7 are preferably captured between the protruding electrodes 42 and the substrate 5, a sufficient number of conductive particles 7 are interposed between the protruding electrodes 42 and the substrate 5 in the obtained connection structure 1. It becomes possible to make it.
　上述した作用効果は、異方導電性フィルム９として、導電粒子７が異方導電性フィルム９の一面９ａ側に偏在した異方導電性フィルムを用いた場合に顕著に奏される。この理由としては、流体の流動性の観点から、異方導電性フィルム９の基板５との界面側（一面９ａ側）における接着剤成分の流動性は、異方導電性フィルム９の中央部における接着剤成分の流動性より低下することが挙げられる。このため、流動性が低い一面９ａ側に偏在した導電粒子７は、異方導電性フィルム全体に配置された導電粒子７より流動がより抑制されるため、上述した作用効果が顕著に奏されると考えられる。 The above-described operation and effect are remarkably exhibited when an anisotropic conductive film in which the conductive particles 7 are unevenly distributed on the one surface 9a side of the anisotropic conductive film 9 is used as the anisotropic conductive film 9. The reason for this is that, from the viewpoint of fluidity of the fluid, the fluidity of the adhesive component on the interface side (one surface 9a side) of the anisotropic conductive film 9 with the substrate 5 is the center of the anisotropic conductive film 9. It may be lower than the fluidity of the adhesive component. For this reason, since the flow of the conductive particles 7 unevenly distributed on the one surface 9a side having low fluidity is suppressed more than the conductive particles 7 arranged on the entire anisotropic conductive film, the above-described effects are remarkably exhibited. it is conceivable that.
　また、仮固定工程において、突起電極４２の表面４２ａと基板５の表面５ａとの間の距離ｄが導電粒子７の平均粒径の１００％以下となるように突起電極４２を異方導電性フィルム９に押し込む場合、導電粒子７が突起電極４２及び基板５に接触した状態で仮固定されるため、導電粒子７を突起電極４２と基板５との間により好適に捕捉できる。 Further, in the temporary fixing step, the protruding electrode 42 is anisotropically conductive film so that the distance d between the surface 42 a of the protruding electrode 42 and the surface 5 a of the substrate 5 is 100% or less of the average particle diameter of the conductive particles 7. 9, since the conductive particles 7 are temporarily fixed in contact with the protruding electrodes 42 and the substrate 5, the conductive particles 7 can be captured more suitably between the protruding electrodes 42 and the substrate 5.
　また、仮固定工程において、突起電極４２の表面４２ａと基板５の表面５ａとの間の距離ｄが導電粒子７の平均粒径の１００％未満となるように突起電極４２を異方導電性フィルム９に押し込む場合、仮固定工程において導電粒子７が突起電極４２と基板５との間に噛合して捕捉されるため、異方導電性フィルム９の接着剤成分の流動に伴う導電粒子７の流出がより一層抑制され、導電粒子７を突起電極４２と基板５との間に更に好適に捕捉できる。 Further, in the temporary fixing step, the protruding electrode 42 is anisotropically conductive film so that the distance d between the surface 42 a of the protruding electrode 42 and the surface 5 a of the substrate 5 is less than 100% of the average particle diameter of the conductive particles 7. 9, since the conductive particles 7 are engaged and captured between the protruding electrodes 42 and the substrate 5 in the temporary fixing step, the conductive particles 7 flow out due to the flow of the adhesive component of the anisotropic conductive film 9. Is further suppressed, and the conductive particles 7 can be more preferably captured between the protruding electrodes 42 and the substrate 5.
　以下、実施例に基づいて本発明をより具体的に説明するが、本発明は、これらの実施例に限定されるものではない。 Hereinafter, the present invention will be described in more detail based on examples, but the present invention is not limited to these examples.
［実施例１－１～１－３、比較例１－１］
（フェノキシ樹脂ａの合成）
　４，４’－（９－フルオレニリデン）－ジフェノール４５ｇ（シグマアルドリッチジャパン株式会社製）、及び３，３’，５，５’－テトラメチルビフェノールジグリシジルエーテル５０ｇ（三菱化学株式会社製：ＹＸ－４０００Ｈ）を、ジムロート冷却管、塩化カルシウム管、及び攪拌モーターに接続されたテフロン（登録商標）攪拌棒を装着した３０００ｍＬの３つ口フラスコ中でＮ－メチルピロリドン１０００ｍＬに溶解して反応液とした。これに炭酸カリウム２１ｇを加え、マントルヒーターで１１０℃に加熱しながら攪拌した。３時間攪拌後、１０００ｍＬのメタノールが入ったビーカーに反応液を滴下し、生成した沈殿物を吸引ろ過することによってろ取した。ろ取した沈殿物を３００ｍＬのメタノールで更に３回洗浄して、フェノキシ樹脂ａを７５ｇ得た。 [Examples 1-1 to 1-3, Comparative Example 1-1]
(Synthesis of phenoxy resin a)
45 g of 4,4 ′-(9-fluorenylidene) -diphenol (manufactured by Sigma-Aldrich Japan) and 50 g of 3,3 ′, 5,5′-tetramethylbiphenol diglycidyl ether (manufactured by Mitsubishi Chemical Corporation: YX- 4000H) was dissolved in 1000 mL of N-methylpyrrolidone in a 3000 mL three-necked flask equipped with a Dimroth condenser tube, a calcium chloride tube, and a Teflon (registered trademark) stirring rod connected to a stirring motor to obtain a reaction solution. . To this, 21 g of potassium carbonate was added and stirred while heating to 110 ° C. with a mantle heater. After stirring for 3 hours, the reaction solution was dropped into a beaker containing 1000 mL of methanol, and the produced precipitate was collected by suction filtration. The precipitate collected by filtration was further washed three times with 300 mL of methanol to obtain 75 g of phenoxy resin a.
　その後、東ソー株式会社製高速液体クロマトグラフＧＰ８０２０を用いてフェノキシ樹脂ａの分子量を測定した（測定条件は前述）。その結果、ポリスチレン換算でＭｎ＝１５７６９、Ｍｗ＝３８０４５、Ｍｗ／Ｍｎ＝２．４１３であった。 Thereafter, the molecular weight of the phenoxy resin a was measured using a high performance liquid chromatograph GP8020 manufactured by Tosoh Corporation (the measurement conditions were the same as described above). As a result, Mn = 15769, Mw = 38045, and Mw / Mn = 2.413 in terms of polystyrene.
（異方導電性フィルムＡの作製）
　導電性接着剤層用の接着剤ペーストの形成にあたって、エポキシ化合物としてビスフェノールＡ型エポキシ樹脂（三菱化学株式会社製：ｊＥＲ８２８）を固形分で５０質量部、硬化剤として４－ヒドロキシフェニルメチルベンジルスルホニウムヘキサフルオロアンチモネートを固形分で５質量部、及びフィルム形成材としてフェノキシ樹脂ａを固形分で５０質量部を配合した。また、導電粒子として、ポリスチレンを核とする粒子の表面に厚み０．２μｍのニッケル層を設け、平均粒径３．３μｍ、比重２．５の導電粒子を作製し、この導電粒子を５０質量部で上記配合物に更に配合した。そして、この接着剤ペーストを厚み５０μｍのＰＥＴフィルムにコーターを用いて塗布し、乾燥させることにより、ＰＥＴフィルム上に形成された厚みが３μｍの導電性接着剤層を得た。 (Preparation of anisotropic conductive film A)
In the formation of the adhesive paste for the conductive adhesive layer, 50 parts by mass of bisphenol A type epoxy resin (Mitsubishi Chemical Co., Ltd .: jER828) as the epoxy compound in solids and 4-hydroxyphenylmethylbenzylsulfonium hexanium as the curing agent 5 parts by mass of fluoroantimonate in a solid content and 50 parts by mass of a phenoxy resin a as a film forming material in a solid content were blended. In addition, as a conductive particle, a nickel layer having a thickness of 0.2 μm is provided on the surface of a particle having polystyrene as a core, and a conductive particle having an average particle size of 3.3 μm and a specific gravity of 2.5 is produced. And further blended into the above blend. The adhesive paste was applied to a PET film having a thickness of 50 μm using a coater and dried to obtain a conductive adhesive layer having a thickness of 3 μm formed on the PET film.
　次に、絶縁性接着剤層用の接着剤ペーストの形成にあたって、エポキシ化合物としてビスフェノールＦ型エポキシ樹脂（三菱化学株式会社製：ｊＥＲ８０７）を固形分で４５質量部、硬化剤として４－ヒドロキシフェニルメチルベンジルスルホニウムヘキサフルオロアンチモネートを固形分で５質量部、及びフィルム形成材としてビスフェノールＡ・ビスフェノールＦ共重合型フェノキシ樹脂（新日鉄住金化学株式会社製：ＹＰ－７０）を固形分で５５質量部を配合した。そして、この接着剤ペーストを厚み５０μｍのＰＥＴフィルムにコーターを用いて塗布し、乾燥させることにより、ＰＥＴフィルム上に形成された厚みが１４μｍの絶縁性接着剤層を得た。その後、導電性接着剤層と絶縁性接着剤層とを４０℃に加熱してホットロールラミネータで貼り合わせ、ＰＥＴフィルム間に挟まれた異方導電性フィルムＡを得た。 Next, in forming an adhesive paste for the insulating adhesive layer, bisphenol F type epoxy resin (Mitsubishi Chemical Co., Ltd .: jER807) as an epoxy compound is 45 parts by mass, and 4-hydroxyphenylmethyl is used as a curing agent. 5 parts by mass of benzylsulfonium hexafluoroantimonate in solid content and 55 parts by mass of bisphenol A / bisphenol F copolymer phenoxy resin (manufactured by Nippon Steel & Sumikin Chemical Co., Ltd .: YP-70) as a film forming material did. The adhesive paste was applied to a PET film having a thickness of 50 μm using a coater and dried to obtain an insulating adhesive layer having a thickness of 14 μm formed on the PET film. Thereafter, the conductive adhesive layer and the insulating adhesive layer were heated to 40 ° C. and bonded with a hot roll laminator to obtain an anisotropic conductive film A sandwiched between PET films.
　得られた異方導電性フィルムＡについて、２５０００μｍ２当たりの導電粒子数を２０か所で実測し、その平均値を１ｍｍ２に当たりの導電粒子数に換算した。その結果、異方導電性フィルムＡ中の導電粒子の密度は、２８００００個／ｍｍ２であった。 About the obtained anisotropic conductive film A, the number of conductive particles per 25000 μm 2 was measured at 20 places, and the average value was converted to the number of conductive particles per 1 mm 2 . As a result, the density of the conductive particles in the anisotropic conductive film A was 280000 pieces / mm 2 .
（接続構造体の作製）
　回路部品として、バンプ電極を配列したＩＣチップ（外形２ｍｍ×２０ｍｍ、厚み０．３ｍｍ、バンプ電極の面積８４０μｍ２（縦７０μｍ×横１２μｍ）、バンプ電極間スペース１２μｍ、バンプ電極高さ１５μｍ）を準備した。また、基板として、ガラス基板（コーニング社製：＃１７３７、３８ｍｍ×２８ｍｍ、厚み０．３ｍｍ）の表面にＩＴＯの配線パターン（パターン幅３１μｍ、電極間スペース７μｍ）が形成された基板を準備した。 (Production of connection structure)
An IC chip (outer dimensions 2 mm × 20 mm, thickness 0.3 mm, bump electrode area 840 μm 2 (length 70 μm × width 12 μm), space between bump electrodes 12 μm, bump electrode height 15 μm) prepared as circuit components is prepared. did. In addition, as a substrate, a substrate was prepared in which an ITO wiring pattern (pattern width 31 μm, interelectrode space 7 μm) was formed on the surface of a glass substrate (Corning Inc .: # 1737, 38 mm × 28 mm, thickness 0.3 mm).
　ＩＣチップとガラス基板との接続には、セラミックヒータからなるステージ（１５０ｍｍ×１５０ｍｍ）及びツール（３ｍｍ×２０ｍｍ）から構成される熱圧着装置を用いた。そして、上記の異方導電性フィルムＡ（２．５ｍｍ×２５ｍｍ）の導電性接着剤層側のＰＥＴフィルムを剥離し、８０℃、０．９８ＭＰａの条件で２秒間加熱及び加圧して導電性接着剤層側の面をガラス基板に貼り付けた。 For the connection between the IC chip and the glass substrate, a thermocompression bonding apparatus composed of a stage (150 mm × 150 mm) composed of a ceramic heater and a tool (3 mm × 20 mm) was used. Then, the PET film on the side of the conductive adhesive layer of the anisotropic conductive film A (2.5 mm × 25 mm) is peeled off, and heated and pressed for 2 seconds under the conditions of 80 ° C. and 0.98 MPa to conduct conductive adhesion. The surface on the agent layer side was attached to a glass substrate.
　次に、ＩＣチップのバンプ電極とガラス基板の回路電極との位置合わせを行った後、表１に示す仮固定温度及び仮固定圧力で１秒間加熱及び加圧して、ＩＣチップのバンプ電極を異方導電性フィルムＡに押し込んだ。仮固定後のガラス基板とバンプ電極との間の距離を表１に示す。なお、仮固定後の基板とバンプ電極との間の距離は、金属顕微鏡を用いてガラス基板側から観察し、ガラス基板の表面の焦点距離とバンプ電極の表面の焦点距離との差から算出した。 Next, after aligning the bump electrode of the IC chip with the circuit electrode of the glass substrate, the bump electrode of the IC chip is changed by heating and pressurizing for 1 second at the temporary fixing temperature and temporary fixing pressure shown in Table 1. The film was pushed into the conductive film A. Table 1 shows the distance between the temporarily fixed glass substrate and the bump electrode. Note that the distance between the temporarily fixed substrate and the bump electrode was observed from the glass substrate side using a metal microscope, and was calculated from the difference between the focal length of the glass substrate surface and the bump electrode surface. .
　続いて、１６０℃、７０ＭＰａの条件で５秒間加熱及び加圧することにより、ガラス基板にＩＣチップを本固定し、接続構造体を得た。接続構造体における導電粒子の捕捉率を以下の式に基づき算出した。
捕捉率（％）＝（バンプ電極上の導電粒子数／（１ｍｍ２／バンプ電極面積）／異方導電性フィルムの１ｍｍ２当たりの導電粒子数）×１００
　なお、金属顕微鏡を用いてバンプ電極２００箇所について導電粒子数を実測し、その平均値をバンプ電極上の導電粒子数とした。結果を表１に示す。 Subsequently, the IC chip was permanently fixed to the glass substrate by heating and pressurizing for 5 seconds under conditions of 160 ° C. and 70 MPa to obtain a connection structure. The capture rate of the conductive particles in the connection structure was calculated based on the following formula.
Capture rate (%) = (number of conductive particles on bump electrode / (1 mm 2 / bump electrode area) / number of conductive particles per 1 mm 2 of anisotropic conductive film) × 100
In addition, the number of conductive particles was measured at 200 bump electrodes using a metal microscope, and the average value was defined as the number of conductive particles on the bump electrode. The results are shown in Table 1.
Figure JPOXMLDOC01-appb-T000001
Figure JPOXMLDOC01-appb-T000001
［実施例２－１～２－２、比較例２－１］
（異方導電性フィルムＢの作製）
　フェノキシ樹脂ａに代えてビスフェノールＡ型フェノキシ樹脂（新日鉄住金化学株式会社製：ＹＰ－５０）、ビスフェノールＡ・ビスフェノールＦ共重合型フェノキシ樹脂（新日鉄住金化学株式会社製：ＹＰ－７０）に代えてビスフェノールＦ型フェノキシ樹脂（新日鉄住金化学株式会社製：ＦＸ－３１６）をそれぞれ用いた以外は、異方導電性フィルムＡと同様にして異方導電性フィルムＢを作製した。得られた異方導電性フィルムＢについて、２５０００μｍ２当たりの導電粒子数を２０か所で実測し、その平均値を１ｍｍ２に当たりの導電粒子数に換算した。その結果、異方導電性フィルムＢ中の導電粒子の密度は、３３００００個／ｍｍ２であった。 [Examples 2-1 and 2-2, Comparative Example 2-1]
(Preparation of anisotropic conductive film B)
Bisphenol A type phenoxy resin (manufactured by Nippon Steel & Sumikin Chemical Co., Ltd .: YP-50) instead of phenoxy resin a, bisphenol A / bisphenol F copolymer type phenoxy resin (manufactured by Nippon Steel & Sumikin Chemical Co., Ltd .: YP-70) An anisotropic conductive film B was produced in the same manner as the anisotropic conductive film A, except that an F-type phenoxy resin (manufactured by Nippon Steel & Sumikin Chemical Co., Ltd .: FX-316) was used. About the obtained anisotropic conductive film B, the number of conductive particles per 25000 μm 2 was measured at 20 places, and the average value was converted to the number of conductive particles per 1 mm 2 . As a result, the density of the conductive particles in the anisotropic conductive film B was 330000 / mm 2 .
　異方導電性フィルムＢを用いた以外は実施例１－１と同様にして、表２に示す条件で接続構造体の作製を行い、導電粒子の捕捉率を測定した。結果を表２に示す。 A connection structure was prepared under the conditions shown in Table 2 in the same manner as in Example 1-1 except that the anisotropic conductive film B was used, and the capture rate of conductive particles was measured. The results are shown in Table 2.
Figure JPOXMLDOC01-appb-T000002
Figure JPOXMLDOC01-appb-T000002
［実施例３－１～３－２、比較例３－１～３－２］
　絶縁性接着剤層の厚みを表３に示すように変更した以外は実施例１－１と同様にして、表３に示す条件で接続構造体の作製を行い、導電粒子の捕捉率を測定した。結果を表３に示す。 [Examples 3-1 and 3-2, Comparative Examples 3-1 and 3-2]
Except that the thickness of the insulating adhesive layer was changed as shown in Table 3, a connection structure was prepared under the conditions shown in Table 3 in the same manner as in Example 1-1, and the capture rate of conductive particles was measured. . The results are shown in Table 3.
Figure JPOXMLDOC01-appb-T000003
Figure JPOXMLDOC01-appb-T000003
［実施例３－１～３－２、比較例３－１～３－２］
　絶縁性接着剤層の厚み及びバンプ電極の高さを表４に示すように変更した以外は実施例１－１と同様にして、表４に示す条件で接続構造体の作製を行い、導電粒子の捕捉率を測定した。結果を表４に示す。 [Examples 3-1 and 3-2, Comparative Examples 3-1 and 3-2]
A connection structure was prepared under the conditions shown in Table 4 in the same manner as in Example 1-1 except that the thickness of the insulating adhesive layer and the height of the bump electrode were changed as shown in Table 4. The capture rate of was measured. The results are shown in Table 4.
Figure JPOXMLDOC01-appb-T000004
Figure JPOXMLDOC01-appb-T000004
［参考例１－１～１－３］
　絶縁性接着剤層及び導電性接着剤層の厚み、並びに導電粒子の粒子密度を表５に示すように変更した以外は実施例１－１と同様にして、表５に示す条件で接続構造体の作製を行い、導電粒子の捕捉率を測定した。結果を表５に示す。なお、参考例１－１～１－３では、導電粒子の平均粒径が３．３μｍであるのに対し、導電性接着剤層の厚みが５μｍであるため、導電粒子は、異方導電性フィルムの一面側に偏在していない。 [Reference Examples 1-1 to 1-3]
A connection structure under the conditions shown in Table 5 in the same manner as in Example 1-1 except that the thicknesses of the insulating adhesive layer and the conductive adhesive layer and the particle density of the conductive particles were changed as shown in Table 5. Then, the capture rate of the conductive particles was measured. The results are shown in Table 5. In Reference Examples 1-1 to 1-3, the average particle diameter of the conductive particles is 3.3 μm, whereas the thickness of the conductive adhesive layer is 5 μm. Therefore, the conductive particles are anisotropically conductive. It is not unevenly distributed on one side of the film.
Figure JPOXMLDOC01-appb-T000005
Figure JPOXMLDOC01-appb-T000005
　１…接続構造体、４…回路部品、５…基板、５ａ…基板の表面、７…導電粒子、８…接着剤層、９…異方導電性フィルム、４２…突起電極、４２ａ…突起電極の表面、ｄ…突起電極の表面と基板の表面との距離。 DESCRIPTION OF SYMBOLS 1 ... Connection structure, 4 ... Circuit component, 5 ... Board | substrate, 5a ... Surface of board | substrate, 7 ... Conductive particle, 8 ... Adhesive layer, 9 ... Anisotropic conductive film, 42 ... Projection electrode, 42a ... Projection electrode Surface, d: distance between the surface of the protruding electrode and the surface of the substrate.

Claims (4)

  1. 　突起電極を有する回路部品と基板とを、導電粒子が接着剤層中に分散されてなる異方導電性フィルムを介して接続する接続工程を備える接続構造体の製造方法であって、
    　前記異方導電性フィルムとして、前記導電粒子が前記異方導電性フィルムの一面側に偏在した異方導電性フィルムを用い、
    　前記接続工程は、
    　前記一面側が前記基板側を向くように前記異方導電性フィルムを前記回路部品と前記基板との間に配置し、前記突起電極の表面と前記基板の表面との間の距離が前記導電粒子の平均粒径の１５０％以下となるように前記突起電極を前記異方導電性フィルムに押し込む仮固定工程を備える、接続構造体の製造方法。     A method of manufacturing a connection structure comprising a connection step of connecting a circuit component having a protruding electrode and a substrate via an anisotropic conductive film in which conductive particles are dispersed in an adhesive layer,
    As the anisotropic conductive film, using the anisotropic conductive film in which the conductive particles are unevenly distributed on one side of the anisotropic conductive film,
    The connecting step includes
    The anisotropic conductive film is disposed between the circuit component and the substrate so that the one surface side faces the substrate side, and a distance between the surface of the protruding electrode and the surface of the substrate is the distance between the conductive particles. A method for manufacturing a connection structure, comprising a temporary fixing step of pressing the protruding electrode into the anisotropic conductive film so that the average particle diameter is 150% or less.
  2. 　前記仮固定工程において、前記突起電極の表面と前記基板の表面との間の距離が前記導電粒子の平均粒径の１００％以下となるように前記突起電極を前記異方導電性フィルムに押し込む、請求項１に記載の接続構造体の製造方法。 In the temporary fixing step, the protruding electrode is pushed into the anisotropic conductive film so that the distance between the surface of the protruding electrode and the surface of the substrate is 100% or less of the average particle diameter of the conductive particles. The manufacturing method of the connection structure of Claim 1.
  3. 　前記仮固定工程において、前記突起電極の表面と前記基板の表面との間の距離が前記導電粒子の平均粒径の１００％未満となるように前記突起電極を前記異方導電性フィルムに押し込む、請求項１又は２に記載の接続構造体の製造方法。 In the temporary fixing step, the protruding electrode is pushed into the anisotropic conductive film so that the distance between the surface of the protruding electrode and the surface of the substrate is less than 100% of the average particle diameter of the conductive particles. The manufacturing method of the connection structure of Claim 1 or 2.
  4. 　前記接続工程は、前記仮固定工程の後に、加熱すると共に前記突起電極を前記異方導電性フィルムに更に押し込むことにより、前記突起電極と前記基板とを前記導電粒子を介して電気的に接続する本固定工程を更に備える、請求項１～３のいずれか一項に記載の接続構造体の製造方法。 In the connecting step, after the temporary fixing step, the protruding electrode and the substrate are electrically connected via the conductive particles by heating and further pressing the protruding electrode into the anisotropic conductive film. The method for manufacturing a connection structure according to any one of claims 1 to 3, further comprising a main fixing step.
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CN112204828B (en) * 2018-06-06 2024-01-09 迪睿合株式会社 Method for manufacturing connection body and connection method
US11901096B2 (en) 2018-06-06 2024-02-13 Dexerials Corporation Method for manufacturing connection body and method for connecting component
WO2023153443A1 (en) * 2022-02-09 2023-08-17 株式会社レゾナック Member for forming wiring, method for forming wiring layer using member for forming wiring, and formed wiring member

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KR20170124539A (en) 2017-11-10
TWI775373B (en) 2022-08-21
JP6705442B2 (en) 2020-06-03
JPWO2016143789A1 (en) 2017-12-28
CN113709976A (en) 2021-11-26
TW202129784A (en) 2021-08-01
CN107112659A (en) 2017-08-29
TWI725960B (en) 2021-05-01

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