WO2016124696A1 - Elektronisches bauelement mit einem werkstoff umfassend epoxysilan-modifiziertes polyorganosiloxan - Google Patents
Elektronisches bauelement mit einem werkstoff umfassend epoxysilan-modifiziertes polyorganosiloxan Download PDFInfo
- Publication number
- WO2016124696A1 WO2016124696A1 PCT/EP2016/052398 EP2016052398W WO2016124696A1 WO 2016124696 A1 WO2016124696 A1 WO 2016124696A1 EP 2016052398 W EP2016052398 W EP 2016052398W WO 2016124696 A1 WO2016124696 A1 WO 2016124696A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- optoelectronic component
- component according
- polyorganosiloxane
- semiconductor
- radiation
- Prior art date
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/12—Polysiloxanes containing silicon bound to hydrogen
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/20—Polysiloxanes containing silicon bound to unsaturated aliphatic groups
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/54—Silicon-containing compounds
- C08K5/541—Silicon-containing compounds containing oxygen
- C08K5/5435—Silicon-containing compounds containing oxygen containing oxygen in a ring
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
- C08L83/04—Polysiloxanes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
Definitions
- the present invention relates to an optoelectronic component and a method for its production.
- An object of the invention is an optoelectronic device with improved composite stability and
- Polyorganosiloxane is obtainable by crosslinking a
- a second organosiloxane having at least one silicon-hydrogen bond and an alkoxysilane having at least one epoxy group.
- Components such as light emitting diodes (LEDs) and solar cells are silicones, for example, as a mounting material or adhesion promoter,
- Grout or matrix material for optical elements such as lenses, light conversion elements or
- the device of the invention has surprising property improvements in terms of moisture and temperature resistance as well as the
- Temperature can be determined experimentally, for example, by an increase in weight after exposure to moisture or a decrease in weight after exposure to temperature of the silicone.
- a suitable parameter for characterizing the composite stability is, for example, the shearing resistance.
- the first organosiloxane preferably has one or more monomer units of the general formula (I) where R 1 is a C 2 -C 10 alkenyl and R 2 and R 3 independently of one another are a C 1 -C 10 -alkyl or aryl, C 2 -C 10 -alkenyl or -O-O.
- R 1 is vinyl.
- R 2 and R 3 are each independently preferably methyl, ethyl, propyl or phenyl.
- at least one of R 2 and R 3 is another C 2 -C 10 alkenyl or * -O.
- R 2 may be methyl, ethyl, propyl or phenyl and R 3 is C 2 -C 10 alkenyl or * -O.
- R 2 and R 3 are both * -O or both C 2 -C 10 alkenyl.
- alkyl in the meaning of the present invention has the meaning generally used in the art and includes saturated aliphatic groups including unbranched and branched as well as cyclic
- alkyl also includes a cycloalkyl, that is, an annular saturated one
- a cycloalkyl in the context of the present invention is preferably a C 3 -C 10 cycloalkyl.
- alkenyl likewise includes a cycloalkenyl and accordingly denotes an alkyl or cycloalkyl having one or more double bonds.
- aryl here stands for a monocyclic or bicyclic ring system, wherein at least one of the rings of the system is aromatic.
- An alkoxy group is based on an alkyl group linked to an oxygen atom.
- An epoxy group refers to a cyclic ether having three ring atoms.
- the first organosiloxane has at least two monomer units of the general formula (I). Furthermore, the first organosiloxane on average 2 to 2000, preferably 20 to 1000 monomer units of the general formula (I) have.
- the second organosiloxane preferably has one or more monomer units of the general formula (II)
- R 4 and R 5 are independently a Ci-Cio alkyl or aryl, a hydrogen or * - O.
- R 4 and R 5 are each independently methyl, ethyl, propyl or phenyl.
- R 4 and R 5 are each independently methyl, ethyl, propyl or phenyl.
- R 4 may be methyl, ethyl, propyl or phenyl and R 5 is hydrogen or * -O.
- R 4 and R 5 may both be
- Organosiloxane be present.
- the second organosiloxane preferably has at least two monomer units of the formula (II).
- Organosiloxane can also average 2 to 3,000,
- Organosiloxane is preferably 2 to 3000, preferably 20 to 1000.
- the alkoxysilane preferably has a general formula (III)
- R 6 is a C 2 -C 10 epoxyalkyl or epoxyalkoxy
- R 7 is a C 1 -C 6 alkyl or aryl
- a 0 to 10
- b 1, 2 or 3
- c 0, 1 or 2
- d 1 , 2 or 3
- a + b + c + d 4.
- R 6 is preferably glycidoxy or epoxycyclohexyl.
- R 7 is preferably a C 1 -C 4 alkyl, especially methyl.
- a is 1 to 4; b is preferably 1; c is preferably 0; d is preferably 3.
- the alkoxysilane is a
- (Epoxyalkoxy) alkyltrialkoxysilane Particularly preferred is gamma-glycidoxypropyltrimethoxysilane.
- the alkoxysilane is an (epoxycycloalkyl) alkyltrialkoxysilane. Particularly preferred are beta- (3,4-epoxycyclohexyl) ethyltrimethoxysilane and beta- (3,4-epoxycyclohexyl) ethyltriethoxysilane.
- the alkoxysilane is present at a level of from 0.1% to 20% by weight relative to the total weight of the composition. Further preferred are 1 to 10 wt .-%,
- the first organosiloxane is present at a level of between 50 and 99 percent by weight based on the total weight of the composition.
- the proportion of the first organosiloxane is preferably between 70 and 95% by weight.
- a proportion of the first organosiloxane is between 80 and 90% by weight.
- the second organosiloxane is preferably present in an amount of between 0.5 and 30 percent by weight based on the total weight of the composition.
- the proportion of the second organosiloxane is preferably between 2 and 20% by weight. Particularly preferred is a proportion of the second organosiloxane between 5 and 10 wt .-%.
- the inventors have found within the above ranges particularly advantageous mechanical and thermomechanical properties of the polyorganosiloxane.
- the composition is easy to process, has a low blistering on curing and leads to a low tack of the surface of the polyorganosiloxane.
- the inventors were able to achieve an improved hardness of the polyorganosiloxane over conventional silicones.
- the polyorganosiloxane may have a Shore A hardness of at least 40.
- the Shore A hardness may also be at least 42, 43, 44 or at least 45.
- the Shore A hardness is determined under the standard conditions for the measurement of physical quantities, in particular a dimensional reference temperature of 20 ° C, on the indentation hardness with a hardness tester according to DIN 53505, ASTM D 676.
- the semiconductor may be a radiation-emitting
- the optoelectronic component in this case additionally comprises a radiation-transmissive element, which in a beam path or
- the polyorganosiloxane is arranged and comprises the polyorganosiloxane.
- Radiation permeable element can also be made from the
- the radiation-transmissive element may be a potting compound.
- the potting can in
- the semiconductor may be at least partially removed from the potting
- the invention in the contact area between the potting and the semiconductor, a particularly high thermal load and radiation exposure can occur.
- Polyorganosiloxane is surprisingly stable even in direct contact with the radiation-emitting or radiation-detecting semiconductor and ensures high reliability despite the high stress
- the radiation-transmissive element may also comprise a lens. It is advantageous that the polyorganosiloxane according to the invention has a high mechanical strength and
- the radiation-transmissive element may further include
- the light conversion element usually comprises the polyorganosiloxane and a
- Additive in particular a wavelength conversion substance, which at least partially converts the radiation emitted by the semiconductor into a longer-wave, ie lower-energy, radiation.
- the radiation-transmissive element may also consist of the polyorganosiloxane and the additive.
- a lens and a light conversion element can each also be spaced from the semiconductor in the beam path
- the radiation-transmissive element with a layer thickness of 1 mm preferably has a transmission of at least 70%, preferably at least 80%, particularly preferably at least 85%, in a wavelength range from 360 to 1100 nm.
- the optoelectronic component can additionally
- Radiation-reflecting component comprises.
- Radiation-reflecting element can also be made from the
- Component may be, for example
- the polyorganosiloxane according to the invention has a particularly good adhesion to fillers such as T1O 2 , Al 2 O 3 or wollastonite and thus
- the radiation-reflecting element with a layer thickness of 1 mm in a wavelength range from 360 to 1100 nm preferably has a reflection of at least 80%, preferably at least 90%, particularly preferably at least 95%.
- the optoelectronic component preferably has a housing body.
- the housing body surrounds the semiconductor at least in places.
- the housing body includes the
- Polyorganosiloxane or may also consist of this.
- the optoelectronic component comprises a carrier, wherein the semiconductor is arranged on the carrier by means of an adhesion promoter.
- Adhesive contains the polyorganosiloxane or may consist of this.
- a carrier may also be part of the above-mentioned housing. The inventors have found that the polyorganosiloxane ensures a reliable bonding between the semiconductor and the carrier, which manifests itself in a particularly high life and reliability of the device.
- the adhesion promoter (or adhesive,
- Conductive adhesive or assembly material) between the semiconductor and the carrier has a layer thickness between 1 and 100 ⁇ m, preferably between 5 and 20 ⁇ m.
- the optoelectronic component has a metallic and / or ceramic material, wherein the polyorganosiloxane at least in a partial region of the
- metallic and / or ceramic material is arranged contacting.
- Typical examples of metallic and / or ceramic materials in optoelectronic components are one or more metallic power supply lines, a metallic holder, reflector, bonding wire or heat dissipator.
- An example of a ceramic material is, in addition to the already mentioned above fillers, a ceramic
- the polyorganosiloxane according to the invention has an improved adhesive strength to these materials, in particular after temperature and moisture stress, so that the composite stability within the component is improved.
- the metallic material may in particular comprise Ag, Au and / or Cu.
- the ceramic material may comprise, for example, Al 2 O 3 , S1 3 N 4 or AlN.
- the invention further relates to a method for
- the method comprises the steps:
- Organosiloxane at 20 ° C preferably an average dynamic Viscosity of at most 100,000 millipascal seconds (mPa-s).
- the second organosiloxane preferably has an average dynamic viscosity of at most 100,000 mPa.s, preferably at most 35,000 mPa.s, at 20 ° C., more preferably
- the composition preferably has one at 20 ° C
- average dynamic viscosity at most 100,000 mPa-s, preferably at most 50,000, more preferably at most 20,000 mPa -s.
- the composition is thermally crosslinked at a temperature of 60 ° C to 180 ° C for a period of 5 minutes to 240 minutes, preferably 80 ° C to 150 ° C for a period of 5 minutes to 120 minutes.
- a post-curing process of 60 minutes to 120 minutes at 120 ° C to 150 ° C may additionally be used.
- Pt-and / or RH-based metal-organic catalysts are known, which can be used for silicone crosslinking.
- the crosslinking of the composition takes place before the merger with the semiconductor.
- the semiconductor is arranged in the housing or on the carrier or the reflector.
- composition and semiconductors also take place before networking.
- the semiconductor the semiconductor,
- compositions optionally after its placement in a housing or on a support or reflector, are potted with the composition.
- the composition may also be disposed between the semiconductor and, if present, the housing or carrier as an adhesive. Furthermore, the composition in the beam path or detector window of the
- Figure 1 is a schematic sectional view of an exemplary optoelectronic device according to the present invention, wherein the polyorganosiloxane may be contained in or consist of one or more of the components shown.
- Figure 2 is a schematic sectional view through another exemplary optoelectronic device according to the present invention, wherein the polyorganosiloxane may be contained in or consist of one or more of the components shown.
- Figure 3 is a schematic sectional view through another exemplary optoelectronic device according to the present invention, wherein the polyorganosiloxane may be contained in or consist of one or more of the components shown.
- FIG. 4 shows the results of comparative tests for
- FIG. 1 An exemplary optoelectronic component according to the present invention is shown in simplified form in FIG. 1 as a schematic sectional illustration.
- the component may comprise a housing body (3), which has a
- the semiconductor (1) is for example via a bonding agent (5) with the Housing body (1) connected.
- a bonding agent (5) with the Housing body (1) connected.
- Semiconductor detected radiation can be arranged a potting (4).
- the potting can also for
- the encapsulant may also contain an additive, for example a colorant or phosphor, for example a wavelength conversion substance.
- FIG. 2 shows a further embodiment of the invention
- a lens (6) is formed separately from the casting (4).
- the lens may contain additives as well as the casting.
- Light conversion element (7) may be arranged. Furthermore, radiation-reflecting elements (8) and (9) can be partially laterally and with respect to the radiation-emitting elements
- One or more of the components (3) to (9) shown may each contain or consist of polyorganosiloxane according to the invention. Furthermore, it will be readily apparent to those skilled in the art that not all of the components shown must be present, but also that various
- Components may be present. There have been various compositions of
- Organosiloxanes were thermally curable, addition-curing two-part silicones, such as 2K silicone from Shin-Etsu.
- 2K silicone from Shin-Etsu.
- an exemplary alkoxysilane gamma-glycidoxypropyltrimethoxysilane (CAS 2530-83-8) was used, hereinafter also referred to as epoxy silane.
- Table 1 Tested compositions of epoxy silane-modified polyorganosiloxane. The 0 wt% epoxy silane composition was used as a reference.
- Second organosiloxane 1.0 1.0 1.0 1.0 1.0
- compositions were each cured for one hour be ° C. Subsequently, the properties of the obtained polyorganosiloxanes were determined (Table 2).
- Table 2 Properties of the polyorganosiloxanes after curing. The transmission decrease was measured between 800 and 300 nm with a UV-VIS spectrometer from Perkin Elmer at room temperature. The moldings were about 1mm thick and were made in a teflon mold. The Shore A hardness was determined using a hardness tester according to DIN 53505, ASTM D676 at room temperature.
- the polyorganosiloxane according to the invention has, for example, a thermal expansion of 483 ppm / K at an epoxysilane content of 2% by weight at a heating rate of 3 K / min, while without the epoxysilane additive according to the invention the thermal expansion is 512 ⁇ m ppm / K.
- the heating rate in the measurement was 3 K / min under He; the values refer to the temperature range from -50 to 260 ° C. From the
- the shearing resistance of the polyorganosiloxane according to the invention with 2 wt .-% Epoxysilanzusatz was examined.
- the composition was used as a primer in a layer thickness of 10 ym between a
- the support layers used were copper, silver and gold layers as well as an aluminum oxide ceramic. As reference served the
Abstract
Description
Claims
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15/549,136 US10263164B2 (en) | 2015-02-06 | 2016-02-04 | Electronic component including a material comprising epdxysilane-modified polyorganosiloxane |
DE112016000633.0T DE112016000633A5 (de) | 2015-02-06 | 2016-02-04 | Elektronisches Bauelement mit einem Werkstoff umfassend Epoxysilan-modifiziertes Polyorganosiloxan |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102015101748.2 | 2015-02-06 | ||
DE102015101748.2A DE102015101748A1 (de) | 2015-02-06 | 2015-02-06 | Elektronisches Bauelement mit einem Werkstoff umfassend Epoxysilan-modifiziertes Polyorganosiloxan |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2016124696A1 true WO2016124696A1 (de) | 2016-08-11 |
Family
ID=55349808
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2016/052398 WO2016124696A1 (de) | 2015-02-06 | 2016-02-04 | Elektronisches bauelement mit einem werkstoff umfassend epoxysilan-modifiziertes polyorganosiloxan |
Country Status (3)
Country | Link |
---|---|
US (1) | US10263164B2 (de) |
DE (2) | DE102015101748A1 (de) |
WO (1) | WO2016124696A1 (de) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE69824363T2 (de) * | 1997-10-13 | 2005-06-23 | Dow Corning Toray Silicone Company, Ltd. | Härtbare Siliconzusammensetzung und elektronische Bauteile |
DE602004007016T2 (de) * | 2003-08-14 | 2008-02-07 | Dow Corning Corp., Midland | Silikone mit verbesserter chemikalienbeständigkeit und härtbare silikonzusammensetzungen mit verbesserter migrationsbeständigkeit |
US20100276721A1 (en) * | 2006-02-24 | 2010-11-04 | Dow Corning Corporation | Light Emitting Device Encapsulated with Silicones and Curable Silicone Compositions for Preparing the Silicones |
US20120168815A1 (en) * | 2010-12-31 | 2012-07-05 | Sang-Ran Koh | Encapsulation material and electronic device prepared using the same |
US20130221400A1 (en) * | 2010-10-19 | 2013-08-29 | Mitsuru Tanikawa | Encapsulating agent for optical semiconductor devices, and optical semiconductor device using same |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4754013A (en) * | 1986-12-29 | 1988-06-28 | Dow Corning Corporation | Self-adhering polyorganosiloxane compositions |
JP3511936B2 (ja) * | 1999-03-10 | 2004-03-29 | 信越化学工業株式会社 | 抗菌・防カビ性オルガノポリシロキサン組成物 |
JP4040858B2 (ja) * | 2001-10-19 | 2008-01-30 | 東レ・ダウコーニング株式会社 | 硬化性オルガノポリシロキサン組成物および半導体装置 |
US7732553B2 (en) * | 2008-02-28 | 2010-06-08 | The Regents Of The University Of California | Method of producing encapsulation resins |
US7943719B2 (en) * | 2008-02-28 | 2011-05-17 | The Regents of the University of California; | Encapsulation resins |
JP5136963B2 (ja) * | 2008-03-24 | 2013-02-06 | 信越化学工業株式会社 | 硬化性シリコーンゴム組成物及び半導体装置 |
MY155462A (en) * | 2008-09-30 | 2015-10-15 | Hitachi Chemical Co Ltd | Coating agent, substrate for mounting optical semiconductor element using same, and optical semiconductor device |
JP2013159671A (ja) * | 2012-02-02 | 2013-08-19 | Dow Corning Toray Co Ltd | 硬化性シリコーン組成物、その硬化物、および光半導体装置 |
-
2015
- 2015-02-06 DE DE102015101748.2A patent/DE102015101748A1/de not_active Withdrawn
-
2016
- 2016-02-04 WO PCT/EP2016/052398 patent/WO2016124696A1/de active Application Filing
- 2016-02-04 US US15/549,136 patent/US10263164B2/en active Active
- 2016-02-04 DE DE112016000633.0T patent/DE112016000633A5/de active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE69824363T2 (de) * | 1997-10-13 | 2005-06-23 | Dow Corning Toray Silicone Company, Ltd. | Härtbare Siliconzusammensetzung und elektronische Bauteile |
DE602004007016T2 (de) * | 2003-08-14 | 2008-02-07 | Dow Corning Corp., Midland | Silikone mit verbesserter chemikalienbeständigkeit und härtbare silikonzusammensetzungen mit verbesserter migrationsbeständigkeit |
US20100276721A1 (en) * | 2006-02-24 | 2010-11-04 | Dow Corning Corporation | Light Emitting Device Encapsulated with Silicones and Curable Silicone Compositions for Preparing the Silicones |
US20130221400A1 (en) * | 2010-10-19 | 2013-08-29 | Mitsuru Tanikawa | Encapsulating agent for optical semiconductor devices, and optical semiconductor device using same |
US20120168815A1 (en) * | 2010-12-31 | 2012-07-05 | Sang-Ran Koh | Encapsulation material and electronic device prepared using the same |
Also Published As
Publication number | Publication date |
---|---|
US10263164B2 (en) | 2019-04-16 |
DE102015101748A1 (de) | 2016-08-11 |
DE112016000633A5 (de) | 2017-11-02 |
US20180033927A1 (en) | 2018-02-01 |
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